JP6650275B2 - Substrate holding device - Google Patents
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- JP6650275B2 JP6650275B2 JP2016009179A JP2016009179A JP6650275B2 JP 6650275 B2 JP6650275 B2 JP 6650275B2 JP 2016009179 A JP2016009179 A JP 2016009179A JP 2016009179 A JP2016009179 A JP 2016009179A JP 6650275 B2 JP6650275 B2 JP 6650275B2
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- 239000000758 substrate Substances 0.000 title claims description 65
- 238000009423 ventilation Methods 0.000 claims description 70
- 238000005192 partition Methods 0.000 claims description 38
- 239000012530 fluid Substances 0.000 claims description 14
- 230000002093 peripheral effect Effects 0.000 claims description 7
- 238000000638 solvent extraction Methods 0.000 claims 1
- 230000000052 comparative effect Effects 0.000 description 5
- 238000005259 measurement Methods 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000004891 communication Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 230000037303 wrinkles Effects 0.000 description 1
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- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Description
本発明は、半導体ウエハなどの基板を基体に吸着保持する基板保持装置に関する。 The present invention relates to a substrate holding device for holding a substrate such as a semiconductor wafer by suction on a substrate.
基体の上面に、基板の外縁部を支持する環状の第１支持部と、第１支持部により囲まれた領域内に配置された複数の突起状の第２支持部と、当該領域内に配置された基板を吸着しない領域を形成する筒状部と、が形成され、基板と基体とによって形成される第１支持部の内側の空間の空気吸引が、筒状部に近い吸引口から開始されるように構成されている基板保持装置が提案されている（たとえば、特許文献１参照）。これにより、基板の皺が非吸着部分へ集中する現象の発生が回避されるので、基板の全体的な平坦度の向上が図られている。 An annular first support portion for supporting an outer edge portion of the substrate on the upper surface of the base, a plurality of projecting second support portions arranged in a region surrounded by the first support portion, and an arrangement in the region; And a cylindrical portion forming a region that does not adsorb the formed substrate, and air suction in a space inside the first support portion formed by the substrate and the base is started from a suction port close to the cylindrical portion. A substrate holding device configured as described above has been proposed (for example, see Patent Document 1). This prevents the wrinkles of the substrate from concentrating on the non-sucked portion, thereby improving the overall flatness of the substrate.
しかし、精細な回路パターンを製造するために半導体露光装置の光源の線幅の微細化が進んでおり、ナノメーターサイズの線幅が主流となりつつあるため、基板の平坦度に対する要求基準が高くなっている。 However, as the line width of the light source of the semiconductor exposure apparatus is becoming finer in order to manufacture a fine circuit pattern, and the line width of the nanometer size is becoming mainstream, the required standard for the flatness of the substrate is becoming higher. ing.
そこで、本発明は、基板の平坦度のさらなる向上を図り得る基板保持装置を提供することを目的とする。 Therefore, an object of the present invention is to provide a substrate holding device capable of further improving the flatness of a substrate.
本発明は、上面に開口している複数の通気孔および前記複数の通気孔のそれぞれに連通する通気経路が形成されている平板状の基体と、前記基体の上面から突出して形成されている複数の凸部と、前記基体の上面から突出して前記複数の通気孔および前記複数の凸部を囲うように形成されている環状凸部と、を備えている基板保持装置に関する。 The present invention is directed to a flat substrate having a plurality of ventilation holes opened on an upper surface and a ventilation path communicating with each of the plurality of ventilation holes, and a plurality of projections formed from an upper surface of the substrate. And a ring-shaped projection protruding from the upper surface of the base and surrounding the plurality of ventilation holes and the plurality of projections.
本発明の基板保持装置は、前記基体の上面、前記環状凸部の内周面および基板の下面により画定されている空間において前記基体の上面の内周側から外周側へ順に隣接する第１〜第Ｎの部分空間（Ｎ≧３）を区画する隔壁部が前記基体の上面から突出して形成され、前記第１〜第Ｎの部分空間のうち第ｉの部分空間（ｉ＝１，２，‥Ｎ−１）に対応して配置された通気孔を通じた前記通気経路の流体抵抗および当該第ｉの部分空間の体積の積が、前記第ｉの部分空間の外周側に隣接する第ｉ＋１の部分空間に対応して配置された通気孔を通じた前記通気経路の流体抵抗および当該他の部分空間の体積の積よりも小さくなるように、前記通気経路が構成され、かつ、前記複数の凸部が形成されていることを特徴とする。 The substrate holding device according to the present invention is characterized in that the upper surface of the base, the inner surface of the annular projection and the space defined by the lower surface of the substrate are adjacent to the first to the first from the inner periphery to the outer periphery of the upper surface of the base in order. A partition part that partitions the N-th partial space (N ≧ 3) is formed to protrude from the upper surface of the base, and an i-th partial space (i = 1, 2,...) Of the first to N-th partial spaces. The product of the fluid resistance of the ventilation path and the volume of the i-th partial space through the ventilation hole arranged corresponding to N-1) is the (i + 1) -th portion adjacent to the outer peripheral side of the i-th partial space The ventilation path is configured to be smaller than the product of the fluid resistance of the ventilation path and the volume of the other partial space through the ventilation hole arranged corresponding to the space, and the plurality of protrusions are It is characterized by being formed.
本発明の基板保持装置によれば、基体に形成された通気経路および通気孔を通じて、基体の上面、環状凸部の内周面および基板の下面により画定された閉空間が減圧されて負圧領域が形成される。この際、閉空間において第ｉの部分空間（ｉ＝１，２，‥Ｎ−１）のほうが、隔壁部を介してこれに隣接する第ｉ＋１の部分空間よりもごく短時間ではあるものの先に負圧領域が形成される。これは、一の部分空間に対応して配置された通気孔を通じた通気経路の流体抵抗および当該一の部分空間の体積の積が、他の部分空間の当該積よりも小さくなるように通気経路が構成され、かつ、複数の凸部が形成されているためである。 ADVANTAGE OF THE INVENTION According to the board | substrate holding apparatus of this invention, the closed space defined by the upper surface of a base | substrate, the inner peripheral surface of an annular convex part, and the lower surface of a board | substrate is decompressed through a ventilation path and a vent hole formed in the base | substrate, Is formed. At this time, in the closed space, the i-th subspace (i = 1, 2, .SIGMA.N-1) is much shorter than the (i + 1) th subspace adjacent thereto via the partition, but it is earlier. A negative pressure region is formed. This is so that the product of the fluid resistance of the ventilation path through the ventilation hole arranged corresponding to one subspace and the volume of the one subspace is smaller than the product of the other subspace. And a plurality of convex portions are formed.
たとえば、通気孔の数が多く設計され、通気孔の開口面積が大きく設計され、通気経路の断面積が小さく設計され、または通気経路の負圧形成始端位置から通気孔までの距離が長く設計されることで、通気経路の流体抵抗を高くすることができる。そのほか、通気経路の途中に通気性のある多孔質体または局所的に断面積が大きくなる空間が配置されることによっても通気経路の流体抵抗が高くすることができる。また、複数の凸部の配置個数が多く設計され、または凸部のサイズが大きく設計されることにより、該当する部分空間の体積を小さくすることができる。 For example, the number of ventilation holes is designed to be large, the opening area of the ventilation holes is designed to be large, the cross-sectional area of the ventilation path is designed to be small, or the distance from the negative pressure forming start position of the ventilation path to the ventilation hole is designed to be long. Thereby, the fluid resistance of the ventilation path can be increased. In addition, the fluid resistance of the ventilation path can be increased by arranging a porous body having air permeability or a space having a locally large cross-sectional area in the middle of the ventilation path. In addition, the volume of the corresponding partial space can be reduced by designing the number of the plurality of convex portions to be large or designing the size of the convex portion to be large.
よって、基板は第１の部分空間に対応する第１の領域で平坦性が確保され、その後わずかな時間差をもって第１の部分空間に隣接する第２の部分空間に対応する第２の領域で平坦性が確保される。さらにその後わずかな時間差をもって第２の部分空間に隣接する第３の部分空間に対応する第３の領域で平坦性が確保される。このように基板の平坦性がわずかな時間差をもって逐次的に確保されていくことで、当該基板の全体的な平坦性の向上が図られる。 Therefore, the flatness of the substrate is ensured in the first region corresponding to the first partial space, and thereafter, the substrate is flattened with a slight time difference in the second region corresponding to the second partial space adjacent to the first partial space. Nature is secured. Furthermore, flatness is secured in a third region corresponding to the third subspace adjacent to the second subspace with a slight time difference thereafter. By sequentially securing the flatness of the substrate with a slight time difference in this manner, the overall flatness of the substrate can be improved.
本発明の一態様の基板保持装置において、前記隔壁部の少なくとも一部が、前記環状凸部と比較して上端面が低くまたは同じ高さに形成されている。 In the substrate holding device according to one embodiment of the present invention, at least a part of the partition wall is formed such that an upper end surface thereof is lower than or has the same height as the annular convex portion.
本発明の一態様の基板保持装置において、
前記複数の凸部のうち少なくとも一部が、前記環状凸部または前記隔壁部と比較して上端面が高くまたは同じ高さに形成されている。
In the substrate holding device of one embodiment of the present invention,
At least a part of the plurality of protrusions has an upper end surface that is higher or the same height as the annular protrusion or the partition wall.
（構成）
図１に示されている本発明の一実施形態としての基板保持装置は、セラミックス焼結体からなる略円板状の基体１を備えている。基体１には、上面に開口している複数の通気孔２１および当該複数の通気孔２１のそれぞれに連通する通気経路２２が形成されている。基体１には、その上面から突出する複数の凸部１１と、上面から突出して複数の通気孔２１および複数の凸部１１を囲う環状凸部１２と、環状の第１隔壁部３１と、環状の第２隔壁部３２と、が形成されている。本実施形態では、凸部１１および環状凸部１２が、それぞれの高さが一致するように形成されている。
(Constitution)
The substrate holding device as one embodiment of the present invention shown in FIG. 1 includes a substantially disc-shaped base 1 made of a ceramic sintered body. The base 1 has a plurality of ventilation holes 21 opened on the upper surface and a ventilation path 22 communicating with each of the plurality of ventilation holes 21. The base 1 includes a plurality of protrusions 11 protruding from the upper surface thereof, an annular protrusion 12 protruding from the upper surface and surrounding the plurality of ventilation holes 21 and the plurality of protrusions 11, an annular first partition wall portion 31, And the second partition 32 are formed. In the present embodiment, the protrusions 11 and the annular protrusions 12 are formed such that their heights match.
複数の凸部１１のそれぞれは上端面が同じ高さ（高さ方向の位置が同じ）に形成され、かつ、環状凸部１２、第１隔壁部３１および第２隔壁部３２のそれぞれと比較して上端面が同じ高さに形成されている。第１隔壁部３１および第２隔壁部３２のそれぞれは、環状凸部１２と比較して上端面が同じ高さに形成されている。 Each of the plurality of protrusions 11 has an upper end surface formed at the same height (the position in the height direction is the same), and is compared with each of the annular protrusion 12, the first partition 31 and the second partition 32. And the upper end surfaces are formed at the same height. Each of the first partition wall portion 31 and the second partition wall portion 32 has an upper end surface formed at the same height as the annular convex portion 12.
通気経路２２は、基体１の下面に延在する溝として形成されている。基体１の下面が基台（図示略）の上面に接合されることで、当該溝が真空吸引経路として機能する。少なくとも一方の表面に溝が形成された一対のセラミックス焼結体が当該溝を挟むように接合されることにより、通気経路２２が内部に形成された基体１が作製されてもよい。基台に当該真空吸引経路を構成する経路が形成されていてもよい。 The ventilation path 22 is formed as a groove extending on the lower surface of the base 1. When the lower surface of the base 1 is joined to the upper surface of a base (not shown), the groove functions as a vacuum suction path. The base body 1 in which the ventilation path 22 is formed may be manufactured by joining a pair of ceramic sintered bodies having a groove formed on at least one surface so as to sandwich the groove. A path constituting the vacuum suction path may be formed on the base.
通気経路２２は、円環状の第１周方向経路２２１、第１周方向経路２２１よりも外側にある当該円環と中心を同じくする小径円弧形状の第２周方向経路２２３および第２周方向経路２２３よりも外側にある当該円環と中心を同じくする大径円弧形状の第３周方向経路２２５のほか、基体１の径方向に延在して第１周方向経路２２１および第２周方向経路２２３を接続する第１径方向経路２２２および基体１の径方向に延在して第２周方向経路２２３および第３周方向経路２２５を接続する第３径方向経路２２４により構成されている。第２周方向経路２２３および第３周方向経路２２５のそれぞれは、基体１の中心軸線を基準とした回転対称性（たとえば３回転対称性）を有するように形成されている。小径円弧形状の第２周方向経路２２３および大径円弧形状の第３周方向経路２２５のそれぞれの中心角はたとえばπ／２［ｒａｄ］に設計されている。第１周方向経路２２１から径方向外側に延在する単一の始端側経路２２６が基体１に形成されている。 The ventilation path 22 includes an annular first circumferential path 221, a small-diameter arc-shaped second circumferential path 223 and a second circumferential path having the same center as the ring located outside the first circumferential path 221. In addition to a large-diameter arc-shaped third circumferential path 225 having the same center as the ring located outside of the ring 223, a first circumferential path 221 and a second circumferential path extending in the radial direction of the base body 1. 223 and a third radial path 224 extending in the radial direction of the base 1 and connecting the second circumferential path 223 and the third circumferential path 225. Each of the second circumferential path 223 and the third circumferential path 225 is formed to have rotational symmetry (for example, three rotational symmetry) with respect to the center axis of the base 1. The central angle of each of the small-diameter circular second circumferential path 223 and the large-diameter circular third circumferential path 225 is designed to be, for example, π / 2 [rad]. A single start-side path 226 extending radially outward from the first circumferential path 221 is formed in the base 1.
通気孔２１は、第１周方向経路２２１、第２周方向経路２２３および第３周方向経路２２５のそれぞれに対応する位置に形成されている。たとえば、第１周方向経路２２１にはその周方向に等間隔に２０個の通気孔２１が形成され、第２周方向経路２２３にはその両端に２個の通気孔２１が形成され、第３周方向経路２２５にはその両端および中間位置に３個の通気孔２１が形成されている。 The ventilation hole 21 is formed at a position corresponding to each of the first circumferential path 221, the second circumferential path 223, and the third circumferential path 225. For example, 20 air holes 21 are formed in the first circumferential path 221 at equal intervals in the circumferential direction, and two air holes 21 are formed in both ends of the second circumferential path 223. The circumferential path 225 has three ventilation holes 21 at both ends and an intermediate position.
基体１の上面側に基板（図示略）が載置された場合、基体１の上面、環状凸部１２の内周面および基板の下面により閉空間（正確には通気孔２１を通じて通気経路２２に連通している。）が画定される。閉空間は、第１隔壁部３１により画定されている略円形状の第１部分空間Ｓ１、第１隔壁部３１および第２隔壁部３２により画定されている略円環状の第２部分空間Ｓ２、および第２隔壁部３２および環状凸部１２により画定されている略円環状の第３部分空間Ｓ３に区別されている。 When a substrate (not shown) is placed on the upper surface side of the base 1, a closed space is formed by the upper surface of the base 1, the inner peripheral surface of the annular projection 12, and the lower surface of the substrate (more precisely, to the ventilation path 22 through the ventilation hole 21. Communication.) Is defined. The closed space is a substantially circular first partial space S1 defined by the first partition 31, a substantially annular second partial space S2 defined by the first partition 31 and the second partition 32, And a substantially annular third partial space S3 defined by the second partition 32 and the annular convex portion 12.
第１部分空間Ｓ１の体積Ｖ１＜第２部分空間Ｓ２の体積Ｖ２＜第３部分空間Ｓ３の体積Ｖ３、という大小関係が成り立つように、複数の凸部１１の疎密または相互間隔を含む配置態様が調節されている。たとえば、基体１の上面を基準とした環状凸部１２の高さＨ、第１部分空間Ｓ１を画定する円の半径ｑ１、凸部１１の体積ｖ（平均体積）および第１部分空間Ｓ１に存在する凸部１１の個数Ｎ１を用いて、第１部分空間Ｓ１の体積Ｖ１は（ｑ１）2πＨ−ｖＮ１と表わされる。第２部分空間Ｓ２の体積Ｖ２は｛（ｑ２）2−（ｑ１）2｝πＨ−ｖＮ２（ｑ２：第２部分空間Ｓ２を画定する外側の円の半径 Ｎ２：第２部分空間Ｓ２に存在する凸部１１の個数）と表わされる。同様に、第３部分空間Ｓ３の体積Ｖ３は｛（ｑ３）2−（ｑ３）2｝πＨ−ｖＮ３（ｑ３：第３部分空間Ｓ３を画定する外側の円の半径 Ｎ３：第３部分空間Ｓ３に存在する凸部１１の個数）と表わされる。ｑ１＞ｑ２−ｑ１＞ｑ３−ｑ２という大小関係が成り立つ場合など、ｑ１、ｑ２およびｑ３の大小関係がさまざまに変更されても、各部分空間Ｓ１〜Ｓ３の体積Ｖ１〜Ｖ３の大小関係はＶ１＝Ｖ２＝Ｖ３、Ｖ２＜Ｖ３＜Ｖ１、Ｖ３＝Ｖ１＜Ｖ２など任意に変更されうる。 An arrangement mode including the density of the plurality of convex portions 11 or the mutual interval is established so that the magnitude relationship of the volume V1 of the first partial space S1 <the volume V2 of the second partial space S2 <the volume V3 of the third partial space S3 is satisfied. Has been adjusted. For example, the height H of the annular convex portion 12 with respect to the upper surface of the base 1, the radius q1 of the circle defining the first partial space S1, the volume v (average volume) of the convex portion 11, and the presence in the first partial space S1 using the number N1 of the convex portion 11 to the volume V1 of the first portion space S1 is expressed as (q1) 2 πH-vN1. The volume V2 of the second subspace S2 is ｛(q2) 2 − (q1) 2 ｝ πH-vN2 (q2: radius of an outer circle defining the second subspace S2 N2: convexity existing in the second subspace S2 (The number of parts 11). Similarly, the volume V3 of the third subspace S3 is ｛(q3) 2 − (q3) 2 ｝ πH-vN3 (q3: radius of an outer circle defining the third subspace S3 N3: third subspace S3 (The number of existing convex portions 11). Even if the magnitude relationship of q1, q2, and q3 is variously changed, such as when the magnitude relationship of q1>q2-q1> q3-q2 holds, the magnitude relationship of the volumes V1 to V3 of the subspaces S1 to S3 is V1 = V2 = V3, V2 <V3 <V1, and V3 = V1 <V2.
第１部分空間Ｓ１は、第１周方向経路２２１に対応して配置されている通気孔２１を介して通気経路２２に連通している。第２部分空間Ｓ２は、第２周方向経路２２３に対応して配置されている通気孔２１を介して通気経路２２に連通している。第３部分空間Ｓ３は、第３周方向経路２２５に対応して配置されている通気孔２１を介して通気経路２２に連通している。 The first partial space S <b> 1 communicates with the ventilation path 22 via the ventilation hole 21 arranged corresponding to the first circumferential path 221. The second partial space S2 communicates with the ventilation path 22 through the ventilation hole 21 arranged corresponding to the second circumferential path 223. The third partial space S3 communicates with the ventilation path 22 via the ventilation hole 21 arranged corresponding to the third circumferential path 225.
始端側経路２２６の外側端部位置（負圧形成始端位置）を通じて通気経路２２が真空吸引装置（図示略）に対して接続されている。すなわち、通気経路２２を構成する当該経路２２１〜２２５のうち、第１周方向経路２２１が負圧形成始端位置に最も近くなるように、通気経路２２が真空吸引装置に対して接続されている。通気経路２２の断面積が一様である場合、その流体抵抗は真空吸引装置からの経路が長くなるほど大きくなる。また、第１部分空間Ｓ１〜Ｓ３のそれぞれに対応する通気孔２１の個数は、「２０」「６」「９」である。これにより、第１部分空間Ｓ１に対応して配置された通気孔２１を通じた通気経路２２の流体抵抗Ｒ１＜第２部分空間Ｓ２に対応して配置された通気孔２１を通じた通気経路２２の流体抵抗Ｒ２＜第３部分空間Ｓ３に対応して配置された通気孔２１を通じた通気経路２２の流体抵抗Ｒ３という大小関係が成り立つように設計されている。 The ventilation path 22 is connected to a vacuum suction device (not shown) through the outer end position (negative pressure formation start end position) of the start end path 226. That is, the ventilation path 22 is connected to the vacuum suction device such that the first circumferential path 221 is closest to the negative pressure formation start end position among the paths 221 to 225 constituting the ventilation path 22. When the cross-sectional area of the ventilation path 22 is uniform, the fluid resistance increases as the path from the vacuum suction device increases. In addition, the number of the ventilation holes 21 corresponding to each of the first partial spaces S1 to S3 is “20”, “6”, and “9”. Thereby, the fluid resistance R1 of the ventilation path 22 through the ventilation hole 21 arranged corresponding to the first partial space S1 <the fluid in the ventilation path 22 through the ventilation hole 21 arranged corresponding to the second partial space S2. It is designed so that the magnitude relationship of the resistance R2 <the fluid resistance R3 of the ventilation path 22 through the ventilation hole 21 arranged corresponding to the third partial space S3 is established.
（機能）
本発明の基板保持装置によれば、基体１に形成された通気経路２２および通気孔２１を通じて、基体１の上面、環状凸部１２の内周面および基板の下面により画定された閉空間が減圧されて負圧領域が形成される。この際、第１部分空間Ｓ１のほうが、第２部分空間Ｓ２よりもごく短時間ではあるものの先に負圧領域が形成される。これは、第１部分空間Ｓ１に対応して配置された通気孔２１を通じた通気経路２２の流体抵抗Ｒ１および第１部分空間Ｓ１の体積Ｖ１の積Ｒ１×Ｖ１が、第２部分空間の当該積Ｒ２×Ｖ２よりも小さくなるように通気経路２２が構成され、かつ、複数の凸部１１の配置態様が調節されて形成されているためである。同様の理由により、第２部分空間Ｓ２のほうが、第３部分空間Ｓ３よりもごく短時間ではあるものの先に負圧領域が形成される。
(function)
According to the substrate holding device of the present invention, the closed space defined by the upper surface of the base 1, the inner peripheral surface of the annular convex portion 12, and the lower surface of the substrate is reduced in pressure through the ventilation path 22 and the ventilation hole 21 formed in the base 1. As a result, a negative pressure region is formed. At this time, the negative pressure region is formed earlier in the first partial space S1 than in the second partial space S2, though it is much shorter. This is because the product R1 × V1 of the fluid resistance R1 of the ventilation path 22 through the ventilation hole 21 arranged corresponding to the first subspace S1 and the volume V1 of the first subspace S1 is the product R1 × V1 of the second subspace. This is because the ventilation path 22 is configured to be smaller than R2 × V2, and the arrangement of the plurality of protrusions 11 is adjusted and formed. For the same reason, the negative pressure region is formed earlier in the second partial space S2 than in the third partial space S3, though it is much shorter.
よって、基板は第１部分空間Ｓ１に対応する第１領域で平坦性がまず確保され、その後でわずかな時間差をもって第２部分空間Ｓ２に対応する第２領域で平坦性が確保され、さらにわずかな時間差をもって第３部分空間Ｓ３に対応する第３領域で平坦性が確保される。このように基板の平坦性がわずかな時間差をもって逐次的に確保されていくことで、当該基板の全体的な平坦性の向上が図られる。 Therefore, in the substrate, flatness is firstly ensured in the first region corresponding to the first partial space S1, and thereafter, flatness is ensured in the second region corresponding to the second partial space S2 with a slight time difference. Flatness is ensured in the third region corresponding to the third partial space S3 with a time difference. By sequentially securing the flatness of the substrate with a slight time difference in this manner, the overall flatness of the substrate can be improved.
（本発明の他の実施形態）
前記実施形態では、外側が内側を順次囲むように形成された環状の第１隔壁部３１、環状の第２隔壁部３２および環状凸部１２により、外側が内側を順次囲むような３つの部分空間Ｓ１〜Ｓ３に区分されたが、他の実施形態として閉空間が単一の環状の隔壁部およびこれを囲む環状凸部１２により２つの部分空間に区分されてもよく、外側が内側を順次囲むように形成された３つ以上の環状の隔壁部および環状凸部１２により４つ以上の部分空間に区分されてもよい。部分空間は、基体１の径方向（中心から外側に向かう方向）に順次配置されるように区分されるほか、代替的または付加的に、基体１の周方向（中心囲むように回る方向）に順次配置されるように区分されてもよい。
(Another embodiment of the present invention)
In the above embodiment, the annular first partition wall portion 31, the annular second partition wall portion 32, and the annular convex portion 12 formed so that the outside sequentially surrounds the inside include three partial spaces in which the outside sequentially surrounds the inside. Although divided into S1 to S3, as another embodiment, the closed space may be divided into two partial spaces by a single annular partition portion and an annular convex portion 12 surrounding the same, and the outside sequentially surrounds the inside. It may be divided into four or more partial spaces by three or more annular partition walls and the annular protrusion 12 formed as described above. The partial space is divided so as to be sequentially arranged in the radial direction of the base 1 (a direction from the center to the outside), and alternatively or additionally, in the circumferential direction of the base 1 (the direction of surrounding the center). It may be divided so as to be arranged sequentially.
通気経路２２の延在態様はさまざまに変更されてもよい。たとえば、基体１の径方向外側に向かって少なくとも一部が周方向に折り返しを伴って（蛇行して）延在するように通気経路２２が形成されてもよい。通気経路２２の負圧領域始端位置は、基体１の中心に近い内側領域にある必要はなく、基体１の外周縁に近い外側領域にあってもよい。 The extension of the ventilation path 22 may be variously changed. For example, the ventilation path 22 may be formed so that at least a part of the base 1 extends radially outward with a turn in the circumferential direction (meandering). The start position of the negative pressure region of the ventilation path 22 does not need to be in the inner region near the center of the base 1, but may be in the outer region near the outer peripheral edge of the base 1.
複数の凸部１１のうち少なくとも一部が、環状凸部１２、第１隔壁部３１および第２隔壁部３２のうち少なくとも１つと比較して上端面が高く形成されていてもよい。第１隔壁部３１の少なくとも一部が、環状凸部１２と比較して上端面が低く形成されていてもよい。同様に、第２隔壁部３２の少なくとも一部が、環状凸部１２と比較して上端面が低く形成されていてもよい。隔壁部３１、３２の上部に周方向に延在する一の切欠きまたは周方向に配置された複数の切欠きが形成されることで、隔壁部３１、３２の一部が、環状凸部１２と比較して上端面が低く形成される。 At least a part of the plurality of protrusions 11 may have a higher upper end surface than at least one of the annular protrusion 12, the first partition 31, and the second partition 32. At least a part of the first partition wall 31 may have an upper end surface lower than that of the annular convex portion 12. Similarly, at least a part of the second partition 32 may be formed such that an upper end surface thereof is lower than that of the annular projection 12. By forming one notch extending in the circumferential direction or a plurality of notches arranged in the circumferential direction above the partition portions 31 and 32, a part of the partition portions 31 and 32 is The upper end surface is formed lower than in FIG.
（実施例）
（実施例１）
炭化ケイ素焼結体からなる径φ３００［ｍｍ］、厚さｔ２［ｍｍ］の略円板状の基体１が作製された。径５００［μｍ］、高さ２００［μｍ］の略円柱状の複数の凸部１１が基体１の上面に形成され、基体１の中心を基準として中心径２９７［ｍｍ］、幅０．３［ｍｍ］、高さ２００［μｍ］の略円環状の環状凸部１２が基体１の上面に形成された。複数の凸部１１は、基体１の上面の全体にわたり均一密度となるように間隔３．５［ｍｍ］の三角格子状に配置された。基体１の中心を基準として中心径１４５［ｍｍ］、幅０．１［ｍｍ］、高さ２００［μｍ］の略円環状の第１隔壁部３１が基体１の上面に形成された。基体１の中心を基準として中心径２３０［ｍｍ］、幅０．１［ｍｍ］、高さ２００［μｍ］の略円環状の第２隔壁部３２が基体１の上面に形成された。通気孔２１および通気経路２２が図１に示されている実施形態にしたがって基体１に形成された。これにより、部分空間Ｓ１〜Ｓ３のそれぞれの体積Ｖ１〜Ｖ３は表１に示されているように設計された。
(Example)
(Example 1)
A substantially disk-shaped substrate 1 made of a silicon carbide sintered body having a diameter of 300 [mm] and a thickness of t2 [mm] was produced. A plurality of substantially columnar protrusions 11 having a diameter of 500 [μm] and a height of 200 [μm] are formed on the upper surface of the base 1, and have a center diameter of 297 [mm] and a width of 0.3 [based on the center of the base 1]. mm] and a height of 200 [μm], a substantially annular annular convex portion 12 was formed on the upper surface of the base 1. The plurality of protrusions 11 were arranged in a triangular lattice with an interval of 3.5 [mm] so as to have a uniform density over the entire upper surface of the base 1. A substantially annular first partition 31 having a center diameter of 145 [mm], a width of 0.1 [mm], and a height of 200 [μm] was formed on the upper surface of the base 1 with reference to the center of the base 1. A substantially annular second partition 32 having a center diameter of 230 [mm], a width of 0.1 [mm], and a height of 200 [μm] was formed on the upper surface of the base 1 with reference to the center of the base 1. Vent holes 21 and vent paths 22 were formed in the substrate 1 according to the embodiment shown in FIG. Thus, the respective volumes V1 to V3 of the subspaces S1 to S3 were designed as shown in Table 1.
第１周方向経路２２１、第２周方向経路２２３および第３周方向経路２２５のそれぞれの（中心位置の）基体１の中心を基準とした径方向位置は１００［ｍｍ］、２００［ｍｍ］、２８０［ｍｍ］に設計された。経路２２１〜２２５は幅０．８［ｍｍ］、深さ０．６［ｍｍ］の断面略矩形状に形成された。これにより、部分空間Ｓ１〜Ｓ３のそれぞれに対応する通気経路２２の流体抵抗Ｒ１〜Ｒ３は表１に示されているように設計された。ここでは、負圧領域始端位置から通気経路２２に沿った距離ｘについて通気経路２２（および通気孔２１）の断面積ａ（ｘ）の逆数１／ａ（ｘ）が各通気孔２１まで積分され、当該積分値の該当部分空間Ｓ１〜Ｓ３における平均値が流体抵抗Ｒ１〜Ｒ３として表１に示されているように設計された。これにより、実施例１の基板保持装置が構成された。 The radial positions of the first circumferential path 221, the second circumferential path 223, and the third circumferential path 225 with respect to the center of the base 1 (at the center position) are 100 [mm], 200 [mm], It was designed to be 280 [mm]. The paths 221 to 225 were formed in a substantially rectangular section with a width of 0.8 [mm] and a depth of 0.6 [mm]. Thus, the fluid resistances R1 to R3 of the ventilation paths 22 corresponding to the respective partial spaces S1 to S3 were designed as shown in Table 1. Here, the reciprocal 1 / a (x) of the cross-sectional area a (x) of the ventilation path 22 (and the ventilation hole 21) is integrated up to each ventilation hole 21 for a distance x along the ventilation path 22 from the start position of the negative pressure region. The average value of the integral values in the corresponding partial spaces S1 to S3 was designed as shown in Table 1 as the fluid resistances R1 to R3. Thus, the substrate holding device of Example 1 was configured.
（実施例２）
第１部分空間Ｓ１における基体１の上面が、他の部分空間Ｓ２、Ｓ３における基体１の上面よりも５０［μｍ］だけ低くなるように基体１が形成され、かつ、第１部分空間Ｓ１に配置された複数の凸部１１の高さが２５０［μｍ］に設計されたほかは、実施例１と同様に構成された実施例２の基板保持装置が作製された。
(Example 2)
The base 1 is formed so that the upper surface of the base 1 in the first partial space S1 is lower than the upper surface of the base 1 in the other partial spaces S2 and S3 by 50 [μm], and is disposed in the first partial space S1. A substrate holding device of Example 2 configured in the same manner as Example 1 except that the height of the plurality of protrusions 11 thus designed was designed to be 250 [μm].
（実施例３）
第２部分空間Ｓ２における基体１の上面が、他の部分空間Ｓ１、Ｓ３における基体１の上面よりも５０［μｍ］だけ低くなるように基体１が形成され、かつ、第２部分空間Ｓ２に配置された複数の凸部１１の高さが２５０［μｍ］に設計されたほかは、実施例１と同様に構成された実施例３の基板保持装置が作製された。
(Example 3)
The base 1 is formed such that the upper surface of the base 1 in the second partial space S2 is lower than the upper surfaces of the bases 1 in the other partial spaces S1 and S3 by 50 [μm], and is disposed in the second partial space S2. A substrate holding device of Example 3 configured in the same manner as Example 1 except that the height of the plurality of protrusions 11 thus designed was designed to be 250 [μm] was manufactured.
（実施例４）
第３部分空間Ｓ３における基体１の上面が、他の部分空間Ｓ１、Ｓ２における基体１の上面よりも５０［μｍ］だけ低くなるように基体１が形成され、かつ、第３部分空間Ｓ３に配置された複数の凸部１１の高さが２５０［μｍ］に設計されたほかは、実施例１と同様に構成された実施例４の基板保持装置が作製された。
(Example 4)
The base 1 is formed such that the upper surface of the base 1 in the third partial space S3 is lower than the upper surfaces of the base 1 in the other partial spaces S1 and S2 by 50 [μm], and is disposed in the third partial space S3. A substrate holding device of Example 4 configured in the same manner as Example 1 except that the height of the plurality of protrusions 11 thus designed was designed to be 250 [μm] was manufactured.
（実施例５）
第１隔壁部３１が基体１の中心を基準として中心径１２０．０［ｍｍ］の位置に形成されたほかは、実施例１と同様に構成された実施例５の基板保持装置が作製された。
(Example 5)
A substrate holding device of Example 5 configured in the same manner as Example 1 except that the first partition wall portion 31 was formed at a position having a center diameter of 120.0 [mm] with respect to the center of the base 1 was manufactured. .
（実施例６）
第２隔壁部３２が基体１の中心を基準として中心径２０５．０［ｍｍ］の位置に形成されたほかは、実施例５と同様に構成された実施例６の基板保持装置が作製された。
(Example 6)
A substrate holding device of Example 6 configured similarly to Example 5 except that the second partition 32 was formed at a position having a center diameter of 205.0 [mm] with respect to the center of the base 1 was manufactured. .
（実施例７）
本実施例の基体１の第１隔壁部３１、第２隔壁部３２および環状凸部１２のそれぞれの高さが１９６［μｍ］に設計されたほかは、実施例１と同様に構成された実施例７の基板保持装置が作製された。
(Example 7)
An embodiment having the same configuration as that of the first embodiment except that the height of each of the first partition wall 31, the second partition wall 32, and the annular projection 12 of the base 1 of the present embodiment is designed to be 196 [μm]. The substrate holding device of Example 7 was manufactured.
（実施例８）
本実施例の基体１の第１隔壁部３１および第２隔壁部３２のそれぞれの高さが１９６［μｍ］に設計されたほかは、実施例１と同様に構成された実施例８の基板保持装置が作製された。
(Example 8)
Except that the height of each of the first partition 31 and the second partition 32 of the base 1 of the present embodiment was designed to be 196 [μm], the substrate holding device of the eighth embodiment configured in the same manner as the first embodiment was used. The device was made.
（評価方法）
各実施例の基板保持装置を用いて径φ３００［ｍｍ］、厚さｔ０．７［ｍｍ］の略円板状の基板が吸着保持された際の平坦度がレーザー干渉計を用いて評価された。当該測定結果が表１に示されている。
(Evaluation method)
The flatness when a substantially disk-shaped substrate having a diameter of 300 [mm] and a thickness of t0.7 [mm] was suction-held using the substrate holding device of each example was evaluated using a laser interferometer. . The measurement results are shown in Table 1.
（比較例１）
始端側経路２２６において、始端から基体１の上面まで連通するように開口された位置が、第２部分空間Ｓ２までを７０［ｍｍ］、および第３部分空間Ｓ３までを３０［ｍｍ］となるよう設計されたほかは、実施例１と同様に構成された基板保持装置が作製され、Ｒ１×Ｖ１＞Ｒ２×Ｖ２＞Ｒ３×Ｖ３に設計された。比較例１の基板保持装置を用いて径φ３００［ｍｍ］、厚さｔ０．７［ｍｍ］の略円板状の基板が吸着保持された際の平坦度がレーザー干渉計を用いて評価された。当該測定結果が表２に示されている。
(Comparative Example 1)
In the start end side path 226, the position opened so as to communicate from the start end to the upper surface of the base 1 is 70 [mm] up to the second partial space S2 and 30 [mm] up to the third partial space S3. Except for the design, a substrate holding device configured in the same manner as in Example 1 was manufactured, and designed to satisfy R1 × V1> R2 × V2> R3 × V3. Using the substrate holding device of Comparative Example 1, the flatness when a substantially disk-shaped substrate having a diameter of 300 [mm] and a thickness of t0.7 [mm] was held by suction was evaluated using a laser interferometer. . The measurement results are shown in Table 2.
（比較例２）
第１部分空間Ｓ１に配置された複数の凸部１１の高さが４００［μｍ］に設計され、第２部分空間Ｓ２に配置された複数の凸部１１の高さが１１０［μｍ］に設計され、第３部分空間Ｓ３に配置された複数の凸部１１の高さが８０［μｍ］に設計されたほかは、実施例１と同様に構成された基板保持装置が作製され、Ｒ１×Ｖ１＞Ｒ２×Ｖ２＞Ｒ３×Ｖ３に設計された。比較例２の基板保持装置を用いて径φ３００［ｍｍ］、厚さｔ０．７［ｍｍ］の略円板状の基板が吸着保持された際の平坦度がレーザー干渉計を用いて評価された。当該測定結果が表２に示されている。
(Comparative Example 2)
The height of the plurality of protrusions 11 arranged in the first subspace S1 is designed to be 400 [μm], and the height of the plurality of protrusions 11 arranged in the second subspace S2 is designed to be 110 [μm]. Then, a substrate holding device configured in the same manner as in Example 1 except that the height of the plurality of convex portions 11 arranged in the third partial space S3 was designed to be 80 [μm] was manufactured, and R1 × V1 > R2 × V2> R3 × V3. The flatness when a substantially disk-shaped substrate having a diameter of 300 [mm] and a thickness of 0.7 [mm] was suction-held using the substrate holding device of Comparative Example 2 was evaluated using a laser interferometer. . Table 2 shows the measurement results.
表１および表２から、各実施例の基板保持装置のほうが、各比較例の基板保持装置よりも吸着保持された基板の平坦度が高いことがわかる。 From Tables 1 and 2, it can be seen that the substrate holding device of each example has higher flatness of the substrate held by suction than the substrate holding device of each comparative example.
１‥基体、１１‥凸部、１２‥環状凸部、２１‥通気孔、２２‥通気経路、３１‥第１隔壁部、３２‥第２隔壁部、Ｓ１‥第１部分空間、Ｓ２‥第２部分空間、Ｓ３‥第３部分空間。 1 base, 11 convex, 12 convex, 21 vent, 22 vent, 31 first partition, 32 second partition, S1 first partial space, S2 second Subspace, S3 ‥ 3rd subspace.
Claims (3)
前記基体の上面、前記環状凸部の内周面および基板の下面により画定されている空間において前記基体の上面の内周側から外周側へ順に隣接する第１〜第Ｎの部分空間（Ｎ≧３）を区画する隔壁部が前記基体の上面から突出して形成され、前記第１〜第Ｎの部分空間のうち第ｉの部分空間（ｉ＝１，２，‥Ｎ−１）に対応して配置された通気孔を通じた前記通気経路の流体抵抗および当該第ｉの部分空間の体積の積が、前記第ｉの部分空間の外周側に隣接する第ｉ＋１の部分空間に対応して配置された通気孔を通じた前記通気経路の流体抵抗および当該他の部分空間の体積の積よりも小さくなるように、前記通気経路が構成され、かつ、前記複数の凸部が形成されていることを特徴とする基板保持装置。
A plurality of ventilation holes that are open on the upper surface, and a flat plate-shaped substrate in which a ventilation path communicating with each of the plurality of ventilation holes is formed; and a plurality of protrusions formed to protrude from the upper surface of the substrate. An annular convex portion projecting from an upper surface of the base and surrounding the plurality of ventilation holes and the plurality of convex portions,
In a space defined by the upper surface of the base, the inner peripheral surface of the annular convex portion, and the lower surface of the substrate, first to Nth partial spaces (N ≧ A partition section for partitioning 3) is formed so as to protrude from the upper surface of the base, and corresponds to an i-th partial space (i = 1, 2, ΔN−1) of the first to N-th partial spaces. The product of the fluid resistance of the ventilation path through the arranged ventilation hole and the volume of the i-th subspace is disposed corresponding to the (i + 1) -th subspace adjacent to the outer peripheral side of the i-th subspace. The ventilation path is configured to be smaller than the product of the fluid resistance of the ventilation path through the ventilation hole and the volume of the other partial space, and the plurality of protrusions are formed. Substrate holding device.
前記隔壁部の少なくとも一部が、前記環状凸部と比較して上端面が低くまたは同じ高さに形成されていることを特徴とする基板保持装置。 The substrate holding device according to claim 1,
A substrate holding device, wherein at least a part of the partition wall portion is formed such that an upper end surface is lower or at the same height as the annular convex portion.
前記複数の凸部のうち少なくとも一部が、前記環状凸部または前記隔壁部と比較して上端面が高くまたは同じ高さに形成されていることを特徴とする基板保持装置。 The substrate holding device according to claim 1 or 2,
A substrate holding device, wherein at least a part of the plurality of protrusions has an upper end surface that is higher or the same height as the annular protrusion or the partition wall.
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