JP6634926B2 - Piezoelectric oscillator - Google Patents

Description

  The present invention relates to a piezoelectric oscillator.

  2. Description of the Related Art As a piezoelectric oscillator used for a communication base station requiring high frequency stability, an oven controlled crystal oscillator (OCXO: Oven Controlled Crystal Oscillator) having an oven is conventionally known.

  As such a constant-temperature crystal oscillator, a quartz oscillator is housed inside a metal block such as an aluminum block having a large heat capacity, and a sensor unit for detecting the temperature of the quartz oscillator is housed. There is an oscillator configured to maintain a crystal oscillator at a predetermined temperature by controlling a heater unit that heats a metal block based on the heater (for example, see Patent Document 1).

JP 2008-306480 A

  In recent years, in the field of these communication devices, there has been a demand for a market that is small in size and low in height. However, the piezoelectric oscillator of Patent Document 1 uses a large metal block, so that the size and height of the piezoelectric oscillator are reduced. There is a problem that is difficult.

  The present invention has been made in view of the above points, and has as its main object to reduce the size and height of a piezoelectric oscillator.

  The present invention has the following configuration to achieve the above object.

(1) A piezoelectric oscillator according to the present invention is a piezoelectric oscillator including a substrate to which a lead terminal of a piezoelectric vibrator and a lead terminal of a heat source for heating the piezoelectric vibrator are connected.
A heat transfer plate to which the piezoelectric vibrator is thermally coupled and the heat source is thermally coupled; a surface mount type temperature sensor disposed in proximity to the lead terminal of the heat source; based on the temperature detected by the sensor, e Bei a temperature control circuit for controlling the heating by the heat source, the heat source is a power transistor, the temperature sensor is a thermistor, the power transistor, the collector of the built-in transistor chip The piezoelectric vibrator has a metal case with a built-in vibrating reed, and the heat transfer plate has a rectangular flat plate portion and the substrate from both ends of the flat plate portion. A pair of bent portions bent toward the side, the pair of bent portions each have a leg portion connected and fixed to the substrate, respectively, the heat dissipation plate of the power transistor and the Piezoelectric vibration The case of the power transistor, wherein the case of the power transistor is solder-bonded to a surface of the heat transfer plate facing the substrate of the flat plate portion, and is solder-bonded to a surface of the flat plate portion facing the substrate. A surface of the mold resin covering the transistor chip facing the substrate and a surface of the case of the piezoelectric vibrator facing the substrate are separated from the substrate .

  According to the present invention, since the piezoelectric vibrator and the heat source are each thermally coupled to a heat transfer plate thinner than the metal block, heat generated from the heat source can be efficiently and efficiently generated by the heat transfer plate. , The piezoelectric vibrator can be heated, and the size and height can be reduced as compared with the conventional example using a metal block.

  In addition, the piezoelectric vibrator such as a crystal vibrator is a lead type having a lead terminal, and the lead type crystal vibrator uses a relatively large crystal vibrating piece compared to the surface mount type, so the Q value is large. And a stable oscillation can be obtained.

  The heat generated from the heat source is transmitted to the piezoelectric vibrator by the heat transfer plate to heat the piezoelectric vibrator as described above, and is also transmitted to the lead terminals of the heat source. Therefore, even if a lead-type temperature sensor is not placed close to the lead-type piezoelectric vibrator, the temperature of the lead terminal can be detected by placing the temperature sensor near the lead terminal of the heat source. The temperature of the child can be detected indirectly. In the temperature control circuit, the temperature of the piezoelectric vibrator can be controlled by controlling the heating by the heat source based on the temperature detected by the temperature sensor.

  Since the temperature sensor only needs to detect the temperature at the position close to the lead terminal of the heat source, a surface-mounted temperature sensor can be used, and the temperature sensor can be mounted on a substrate together with other chip components. For this reason, assembling workability is excellent as compared with a lead type temperature sensor that detects the temperature of the proximity position of the lead type piezoelectric vibrator.

Further , according to the present invention , the heat sink and the metal case of the piezoelectric vibrator connected to the collector of the transistor chip of the power transistor are thermally coupled to the heat transfer plate by solder bonding, respectively. Heat generated by the collector of the transistor chip can be transmitted from the heat radiating plate to the metal case of the piezoelectric vibrator through the solder, the heat transfer plate and the solder without waste, and the vibrating element inside the case can be heated.

( 2 ) In a preferred embodiment of the present invention , the thermistor is arranged close to a collector lead terminal of the power transistor, and the substrate has a land pattern to which the collector lead terminal of the power transistor is connected. And a land pattern to which terminals of the thermistor are connected, and a conductive pattern that connects the two land patterns.

According to this embodiment , the thermistor, which is a temperature sensor, is connected to the collector of the transistor chip of the power transistor, and is disposed close to the collector lead terminal to which heat generated by the collector of the transistor chip is transmitted. By detecting the temperature of the terminal, it is possible to indirectly detect the temperature of the piezoelectric vibrator that is heated by the heat generated by the collector of the transistor chip being transmitted through the heat radiating plate and the heat transfer plate. Furthermore, the heat generated at the collector lead terminal of the power transistor is transmitted from the land pattern to which the collector lead terminal of the power transistor is connected to the land pattern to which the terminal of the thermistor is connected via a conductive pattern. Temperature of the collector lead terminal can be accurately detected.

( 3 ) In another embodiment of the present invention, the power from the central portion of the transistor chip of the power transistor to the central portion of the vibrating piece of the piezoelectric vibrator via the heat sink and the heat transfer plate. The heat distance is substantially the same as the heat transfer distance from the central portion of the transistor chip to the thermistor via the collector lead terminal and the substrate.

  According to this embodiment, heat transfer from the transistor chip of the power transistor to the vibrating piece of the piezoelectric vibrator via the radiator plate and the heat transfer plate, and heat transfer from the transistor chip to the thermistor via the collector lead terminal and the substrate. Is equivalent to This makes it possible to indirectly and accurately detect the temperature of the piezoelectric vibrator by detecting the temperature of the collector lead terminal of the power transistor at a position distant from the piezoelectric vibrator.

(4) In a preferred embodiment of the present invention, prior Symbol piezoelectric vibrator and the power transistor are arranged in parallel along a longitudinal direction of said plate.

  According to this embodiment, the piezoelectric vibrator and the power transistor thermally coupled to the rectangular flat plate portion of the heat transfer plate are arranged in parallel along the longitudinal direction of the flat plate portion. The generated heat can be transmitted in the longitudinal direction through the flat plate portion to efficiently heat the piezoelectric vibrator.

( 5 ) In another embodiment of the present invention, the piezoelectric vibrator is a quartz vibrator.

  According to this embodiment, it can be suitably implemented as a crystal oscillator.

  According to the present invention, since the piezoelectric vibrator and the heat source are each thermally coupled to the heat transfer plate that is thinner than the metal block, heat generated from the heat source can be efficiently and efficiently generated by the heat transfer plate. The piezoelectric vibrator can be heated by being transmitted to the element, and the size and height can be reduced as compared with the conventional example using a metal block.

  In addition, since a piezoelectric vibrator such as a crystal vibrator is a lead type having lead terminals, a Q value is high because a crystal vibrating piece used is relatively large as compared with a surface mount type, and stable oscillation is achieved. Obtainable.

  Furthermore, since the temperature of the piezoelectric vibrator is indirectly detected by detecting the temperature at the position near the lead terminal of the heat source with a temperature sensor, a surface mount type temperature sensor can be used, and other chip components can be used. In addition, it can be mounted on a substrate. Thereby, assembling workability is superior to that of the lead type temperature sensor, and the manufacturing cost can be reduced accordingly.

1 is an external perspective view of a crystal oscillator according to an embodiment of the present invention. FIG. 2 is an exploded perspective view of a main part of the crystal oscillator of FIG. 1. It is a top view of the crystal oscillator of FIG. FIG. 2 is a partially cutaway front view of the crystal oscillator of FIG. 1. It is a side view of the crystal oscillator of FIG. It is a top view of the attachment part of the thermistor of FIG. FIG. 2 is a circuit diagram of a temperature control circuit of the crystal oscillator shown in FIG. 1. It is a schematic plan view which shows the different installation positions of the thermistor. It is a characteristic diagram corresponding to each installation position of the thermistor. FIG. 2 is a plan view showing another example of a mounting portion of the thermistor of FIG. 1.

  Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. In the present embodiment, a description will be given by applying the present invention to a crystal oscillator as a piezoelectric oscillator.

  FIG. 1 is an external perspective view of a crystal oscillator according to an embodiment of the present invention, FIG. 2 is an exploded perspective view of its main part, FIG. 3 is a plan view of the crystal oscillator, and FIG. 5 is a front view of the crystal oscillator, and FIG. 5 is a side view of the crystal oscillator. In each figure, the cover 8 is indicated by a virtual line.

  The crystal oscillator according to this embodiment includes a metal base 1 in the form of a shallow rectangular tray and a printed circuit board (hereinafter referred to as a “board”) supported on the base 1 via a plurality of (five) external lead terminals 2. 3), a crystal oscillator 4 inserted and supported on the substrate 3, a power transistor 5 as a heat source for heating the crystal oscillator 4, and the crystal oscillator 4 and the power transistor 5 on a downward inner surface to be described later. And a thermistor 7 as a temperature sensor for detecting the temperature of the crystal unit 4, and affixed to the outer peripheral edge of the base 1 from above. Metal cover 8 provided.

  An insulating member made of glass or the like is interposed between the base 1 and each of the plurality of external lead terminals 2, and the external lead terminals 2 are supported through the base 1 in an electrically insulated state. .

  Land patterns are formed on the upper and lower surfaces of the substrate 3, and various electronic components constituting an oscillation circuit, a temperature control circuit, and the like are soldered and connected by reflow.

  The crystal unit 4 of this embodiment is a lead type crystal unit having a high Q value because the crystal unit used is relatively large as compared with the surface mount type so that stable oscillation can be obtained. It is. The two lead terminals 4 a extending from the bottom of the crystal unit 4 extend parallel to the substrate 3, are bent toward the substrate 3, and are inserted into through holes of a predetermined land pattern 10. Connected by soldering.

  The power transistor 5 is also of a lead type. The three lead terminals 5a extending from one end of the mold resin 5c extend parallel to the substrate 3 and are bent toward the substrate 3 to form a predetermined land pattern. 11 and are connected by soldering.

  The crystal oscillator 4 and the power transistor 5 are provided such that their upper surfaces are at the same height from the substrate 3.

  The crystal unit 4 has a crystal case, such as an AT-cut, hermetically sealed in a metal case including a flat long cylindrical cap 4b having a closed upper end and a bottom, and the above-described structure is applied to the case from the bottom of the case. The two lead terminals 4a extend as shown in FIG. A pair of excitation electrodes and respective extraction electrodes respectively extracted from the pair of excitation electrodes are formed on the crystal resonator element, and the respective extraction electrodes are joined to the respective pair of lead terminals 4a.

  Each lead terminal 4a is inserted through an insertion hole at the bottom of a metal case, and the insertion hole and the lead terminal 4a are insulated by hermetic glass or the like.

  The power transistor 5 has a molding resin 5c that covers a built-in transistor chip, and the lead terminal 5a extends from one end of the molding resin 5c. In the power transistor 5, a heat sink 5d connected to the collector of the transistor chip is exposed on the upper surface.

  In this embodiment, as described above, the heating plate 6 in which the crystal unit 4 and the power transistor 5 are thermally coupled is provided. The hot plate 6 is made of a material having excellent thermal conductivity, for example, a metal material such as nickel silver, copper or aluminum, in this example, nickel silver.

  The heating plate 6 substantially completely covers the upper surface of the cap 4b of the crystal unit 4 and also has a flat rectangular plate portion 6a that completely covers the upper surface of the power transistor 5, and is bent downward from both ends of the plate portion 6a. And a pair of bent portions 6 b and 6 c. The upper and side surfaces of the power transistor 5 and the crystal unit 4 are provided so as to surround the substrate 3. The flat plate portion 6a is not limited to a rectangular shape, and may have another shape as long as heat generated from the power transistor 5 can be transmitted to the crystal unit 4.

  The pair of bent portions 6b and 6c ensure the rigidity of the entire hot plate 6 by its reinforcing function. The flatness of the flat plate portion 6a to which the crystal unit 4 and the power transistor 5 are thermally coupled is assured. A small-width leg 6d extends from the side closer to the power transistor 5, ie, the center of one of the bent portions 6b closer to the power transistor 5, while the side closer to the crystal resonator 4, ie, closer to the crystal resonator 4. A pair of small-width legs 6e extend from both ends of the other bent portion 6c. The hot plate 6 is stably connected and fixed to the substrate 3 by three-point support via the three legs 6d and 6e so that the flat plate portion 6a is parallel to the substrate 3.

  The hot plate 6 can be formed by, for example, bending a plate-shaped material produced by punching at right angles along each side of both ends in the longitudinal direction of the flat plate portion 6a.

  The upper surfaces of the crystal unit 4 and the power transistor 5 arranged so that the upper surfaces are at the same height from the substrate 3 are formed as flat surfaces.

  In this embodiment, the heat sink 5 d on the upper surface of the power transistor 5 is joined to the downward inner surface of the flat plate portion 6 a of the hot plate 6, that is, the inner surface facing the substrate 3 by solder (not shown), thereby thermally coupling. At the same time, the upper surface of the metal cap 4b of the crystal unit 4 is thermally joined by being joined by solder (not shown).

  Thermally coupled refers to a state in which the heat plate 6 and the power transistor 5 or the crystal unit 4 are in direct or indirect contact with each other to conduct heat. Therefore, the hot plate 6 and the power transistor 5 or the crystal unit 4 may be directly pressed into contact with each other without solder or the like.

  In this embodiment, before mounting the crystal unit 4 and the power transistor 5 on the substrate 3, cream solder is applied in advance to a downward inner surface of the flat plate portion 6 a of the hot plate 6, and at a position where the cream solder is applied, After setting the upper surface of the heat sink 5d of the power transistor 5 and the upper surface of the cap 4b of the crystal unit 4, soldering is performed by reflow.

  In this way, the radiator plate 5 d directly connected to the collector, which is the heat generating portion of the transistor chip built in the power transistor 5, is soldered to the downward inner surface of the flat plate portion 6 a of the hot plate 6, and the metal member of the crystal unit 4 is formed. The flat upper surface of the cap 4b is soldered to the downward inner surface of the flat plate portion 6a of the hot plate 6, so that the heat generated at the collector of the transistor chip of the power transistor 5 generates high heat from the radiator plate 5d directly connected to the collector. It is efficiently transmitted to the upper surface of the metal cap 4b of the crystal unit 4 through the conductive heat plate 6 without waste, and the crystal resonator element inside the cap 4b can be heated.

  As described above, the heat generated from the power transistor 5 is efficiently transmitted to the crystal oscillator 4 by the heat plate 6 which is thinner than the metal block, and the crystal oscillator 4 is heated. Thus, the size and height can be reduced.

  The heat generated from the power transistor 5 is transmitted to the crystal oscillator 4 by the heating plate 6 and heats the crystal oscillator 4 as described above, while a part of the heat generated from the power transistor 5 is built in the power transistor 5. The signal is also transmitted from the collector of the transistor chip to the collector lead terminal 5a (c) which is the lead terminal 5a connected to the collector.

  In this embodiment, a temperature sensor is arranged at a position close to the crystal oscillator 4 to detect the temperature of the crystal oscillator 4, but a collector lead terminal 5a (to which heat generated from the transistor chip of the power transistor 5 is transmitted). The temperature of the crystal oscillator 4 is indirectly detected by detecting the temperature at the proximity position c) by the thermistor 7.

  That is, the thermistor 7 as a temperature sensor is a surface mount type, is mounted on a pair of land patterns 12 exposed at predetermined positions on the substrate 3, and is connected by soldering together with other chip components by reflow processing. .

  When the temperature of the crystal unit 4 is detected by using a lead-type thermistor instead of a surface-mount type, the temperature-sensitive part of the lead-type thermistor is positioned close to the crystal unit 4 on the inner surface of the heating plate 6. , And the lead terminals of the thermistor must be inserted into through holes of the substrate 3 and connected by soldering, and the assembling work is troublesome.

  On the other hand, since the thermistor 7 of this embodiment is of the surface mounting type, it can be mounted on the substrate 3 together with other chip components as described above, and compared to the case where a lead type thermistor is used. As a result, manufacturing costs can be reduced.

  In this embodiment, a transistor chip 5b at the center of the power transistor 5 shown in FIG. 4 is connected via a heat radiating plate 5d and a heat plate 6 so that the temperature of the crystal unit 4 can be accurately detected by the thermistor 7. The heat transfer distance D1 reaching the crystal vibrating piece 4c at the center of the crystal unit 4 and the collector lead terminal 5a (c) and the land patterns 11 and 12 from the transistor chip 5b at the center of the power transistor 5 shown in FIG. The heat transfer distance D2 that reaches the thermistor 7 through the heat sink is substantially the same. Here, the term “identical” is not limited to the case where they are completely identical, but includes an error to some extent, for example, about 10 to 20%.

  FIG. 6 is a plan view showing a mounting portion of the thermistor 7. As shown in FIG. 6, the thermistor 7 is arranged at a position close to the collector lead terminal 5a (c) connected to the collector of the transistor chip among the lead terminals 5a extended from the power transistor 5.

  Here, the close position means that the entire thermistor 7 is located within a circular area within a radius of 4.0 mm, preferably 3.0 mm from the center of the through hole through which the collector lead terminal 5a (c) is inserted. It means that they are close to each other.

  In this embodiment, one land pattern 12 to which the thermistor 7 is connected by soldering is connected via a conductive pattern 13 to a land pattern 11 (c) to which the collector lead terminal 5a (c) of the power transistor 5 is connected by soldering. Connected. Thus, heat generated from the transistor chip of the power transistor 5 is efficiently transmitted to the thermistor 7 via the collector lead terminal 5a (c), the land pattern 11 (c) and the conductive pattern 13.

  Note that the conductive pattern 13 shown in FIG. 6 is different from the conductive pattern 13 having a shape shown in FIG. Are different from each other. That is, the conductive pattern 13 shown in FIG. 6 is drawn from both ends of the longer side of the one rectangular land pattern 12 that is separated from the land pattern 11 (c). On the other hand, the conductive pattern 13 shown in FIG. 10 has two ends of the longer side of one rectangular land pattern 12 on the side closer to the land pattern 11 (c), on the side closer to the land pattern 11 (c). Has been drawn from. The conductive pattern 13 shown in FIG. 6 makes it easier for the thermistor 7 to transmit heat generated from the transistor chip of the power transistor 5 than the conductive pattern 13 shown in FIG.

  The conductive pattern 13 is formed in the same process using the same metal as the land patterns 11, 12, and the like.

  The temperature detected by the thermistor 7 is input to a temperature control circuit of the power transistor 5 as described later, and the energization of the power transistor 5 is controlled so that the temperature of the crystal unit 4 becomes a predetermined temperature.

  FIG. 7 is a circuit diagram of the temperature control circuit of this embodiment. As shown in the figure, the temperature control circuit includes the thermistor 7, the power transistor 5, a differential amplifier IC1, and resistors R1 to R5.

  The power transistor 5 of this embodiment is an NPN type bipolar transistor whose base is connected to the output terminal of the differential amplifier IC1, while its collector is connected to the power supply terminal Vcc and the thermistor 7 as described above. , Its emitter is connected to a ground terminal GND. In the power transistor 5, a current flows between the collector and the emitter in proportion to the output voltage of the differential amplifier IC1 applied to the base, and heat is generated in accordance with the current.

  In this temperature control circuit, when the temperature of the crystal resonator 4, that is, the temperature of the collector lead terminal 5a (c) of the power transistor 5 increases, the resistance value of the thermistor 7 decreases, and the output voltage of the differential amplifier IC1 increases. As a result, the amount of heat generated by the power transistor 5 decreases, and the temperature rise of the crystal unit 4 is suppressed.

  On the other hand, when the temperature of the crystal oscillator 4, that is, the temperature of the collector lead terminal 5a (c) of the power transistor 5 decreases, the resistance value of the thermistor 7 increases, and the output voltage of the differential amplifier IC1 increases. The amount of heat of the transistor 5 increases, and the temperature drop of the crystal unit 4 is suppressed. Thus, the temperature of the crystal unit 4 is controlled to a predetermined temperature.

  Next, the relationship between the installation position of the thermistor 7 and the characteristics of the crystal oscillator will be described.

  As shown in the schematic plan view of FIG. 8, the installation position of the thermistor 7 on the substrate 3 is changed to a first position P1 near the quartz oscillator 4, which is one end of the hot plate 6 in the longitudinal direction, and a third position of the embodiment. Each characteristic was measured at the two positions P2 and at the third position P3 closer to the outside of the substrate 3 than the second position P2.

  FIG. 9 shows the measurement results. Line L1 shows the temperature t (° C.) of the thermostat formed by the base 1 and the cover 8 calculated from the oscillation frequency, and line L2 shows the power transistor 5 2 shows the current I (A) flowing through the circuit. (A), (b), and (c) correspond to the first position P1, the second position P2, and the third position P3, respectively.

  The first position P1 on the substrate 3 is separated from the collector lead terminal 5a (c) of the power transistor 5 and separated from the cap 4b constituting the case of the crystal unit 4. For this reason, the temperature t of the thermostat fluctuates greatly as shown by the line L1 in FIG. 9A, and accordingly, the current I flowing through the power transistor 5 also fluctuates greatly as shown by the line L2.

  The power transistor 5 is arranged close to the collector lead terminal 5a (c) and connected to the land pattern 12 connected to the land pattern 11 (c) of the collector lead terminal 5a (c) by the conductive pattern 13. At the second position P2 of the embodiment, the temperature t of the constant temperature bath is maintained at a constant temperature as shown by the line L1 in FIG. 9B, and the current flowing through the power transistor 5 is also shown by the line L2, A relatively low constant current is maintained, and good characteristics are obtained.

  At a third position P3, which is closer to the outside of the substrate 3 than the second position P2, the temperature t of the constant temperature bath is maintained at a constant temperature as shown by the line L1 in FIG. The flowing current fluctuates greatly in a short cycle as shown by the line L2.

  The above-described embodiment in which the thermistor 7 is installed at the second position P2 has the best characteristics.

[Other embodiments]
The present invention can also be implemented in the following forms.

  (1) The conductive pattern 13 that electrically connects the land pattern 11 (c) to which the collector lead terminal 5a (c) of the power transistor 5 is connected and the land pattern 12 to which the thermistor 7 is connected is not limited to the above-described shape. Instead, for example, the shape shown in FIG. 10 may be used.

  Further, the power transistor 5 is not limited to a bipolar transistor, but may be a field effect transistor (FET). In this case, the temperature at the position near the drain terminal among the lead terminals of the field-effect transistor may be detected.

  Although the thermistor 7 is an NTC type thermistor whose resistance value decreases as the temperature rises, the present invention is not limited to this, and a PTC type thermistor whose resistance value increases as the temperature rises can be used.

  Further, in the above embodiments, the crystal oscillator using quartz as a piezoelectric material has been described, but the present invention can also be applied to a piezoelectric oscillator using a piezoelectric material other than quartz.

3 substrate 4 crystal oscillator 5 power transistor (heat source)
5a Lead terminal 5a (c) Collector lead terminal 6 Heat plate (heat transfer plate)
6a Flat plate portion 6b Bend portion 6c Bend portion 6d Leg 6e Leg 7 Thermistor (temperature sensor)
11 Land pattern 11 (c) Land pattern for collector lead terminal 12 Land pattern 13 Conductive pattern

Claims (5)

A piezoelectric oscillator comprising a substrate to which a lead terminal of a piezoelectric vibrator and a lead terminal of a heat source for heating the piezoelectric vibrator are connected, respectively.
A heat transfer plate to which the piezoelectric vibrator is thermally coupled, and the heat source is thermally coupled,
A surface-mounted temperature sensor arranged in proximity to the lead terminal of the heat source,
Based on the detected temperature of the temperature sensor, Bei example a temperature control circuit for controlling the heating by said heat source,
The heat source is a power transistor, the temperature sensor is a thermistor,
The power transistor has a heat sink connected to a collector of a built-in transistor chip, the piezoelectric vibrator has a metal case with a built-in vibrating reed,
The heat transfer plate has a rectangular flat plate portion, and a pair of bent portions bent from both ends of the flat plate portion toward the substrate side, and the pair of bent portions is formed on the substrate. Each has legs that are connected and fixed,
The heat dissipation plate of the power transistor and the case of the piezoelectric vibrator are respectively soldered to a surface of the heat transfer plate facing the substrate of the flat plate portion,
A surface facing the substrate of mold resin covering the transistor chip of the power transistor, which is solder-bonded to a surface facing the substrate of the flat plate portion, and a surface of the case of the piezoelectric vibrator facing the substrate is Are separated from the substrate, respectively.
A piezoelectric oscillator characterized in that: The thermistor is arranged close to a collector lead terminal of the power transistor,
The substrate has a land pattern to which the collector lead terminal of the power transistor is connected, and a land pattern to which the terminal of the thermistor is connected, and has a conductive pattern that connects the land patterns.
The piezoelectric oscillator according to claim 1. The heat transfer distance from the central portion of the transistor chip of the power transistor to the radiator plate, and the central portion of the vibrating piece of the piezoelectric vibrator via the heat transfer plate, and the heat transfer distance from the central portion of the transistor chip The heat transfer distance to the thermistor via the collector lead terminal and the substrate is substantially the same,
The piezoelectric oscillator according to claim 2. The piezoelectric vibrator and the power transistor are arranged in parallel along the longitudinal direction of the flat plate portion,
The piezoelectric oscillator according to claim 1 . The piezoelectric vibrator is a quartz vibrator,
The piezoelectric oscillator according to claim 1 .

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