JP2017183907A - Piezoelectric oscillator - Google Patents

Abstract

PROBLEM TO BE SOLVED: To attain downsizing and height reduction of a piezoelectric oscillator.SOLUTION: A piezoelectric oscillator comprises a substrate 3 to which a lead terminal 4a of a crystal vibrator 4 and a lead terminal 5a of a power transistor 5 heating the crystal vibrator 4 are connected. The piezoelectric oscillator also comprises: a heating plate 6 to which the crystal vibrator 4 is thermally coupled and to which the power transistor 5 is thermally coupled; a surface-mounted thermistor 7 which is disposed proximately to a collector lead terminal 5a(d) of the power transistor 5; and a temperature control circuit for controlling the heating by the power transistor 5 on the basis of a detected temperature of the thermistor 7.SELECTED DRAWING: Figure 1

Description

  The present invention relates to a piezoelectric oscillator.

  2. Description of the Related Art Conventionally, a thermostatic oven crystal oscillator (OCXO: Oven Controlled Crystal Oscillator) equipped with a thermostatic chamber is known as a piezoelectric oscillator used in a communication base station or the like that requires high frequency stability.

  As such a thermostatic chamber type crystal oscillator, the crystal unit is housed in a metal block such as an aluminum block having a large heat capacity, and a sensor unit for detecting the temperature of the crystal unit is housed, and the temperature detected by the sensor unit is adjusted. Based on this, there is an oscillator configured to control a heater unit for heating a metal block so as to keep a crystal resonator at a predetermined temperature (see, for example, Patent Document 1).

JP 2008-306480 A

  In recent years, in the field of these communication devices, there is a market demand for a small size and a low profile. However, since the piezoelectric oscillator disclosed in Patent Document 1 uses a large metal block, the piezoelectric oscillator has a small size and a low profile. There is a problem that is difficult.

  The present invention has been made in view of the above points, and has as its main object to reduce the size and height of a piezoelectric oscillator.

  In order to achieve the above object, the present invention is configured as follows.

(1) A piezoelectric oscillator according to the present invention includes a substrate to which a lead terminal of a piezoelectric vibrator and a lead terminal of a heat source for heating the piezoelectric vibrator are connected,
The piezoelectric vibrator is thermally coupled, the heat transfer plate to which the heat source is thermally coupled, a surface mount type temperature sensor disposed in proximity to the lead terminal of the heat source, and the temperature And a temperature control circuit that controls heating by the heat source based on the temperature detected by the sensor.

  According to the present invention, since the piezoelectric vibrator and the heat source are thermally coupled to the heat transfer plate that is thinner than the metal block, the piezoelectric vibrator efficiently and efficiently generates heat from the heat source by the heat transfer plate. Therefore, the piezoelectric vibrator can be heated and the size and height can be reduced as compared with the conventional example using a metal block.

  In addition, piezoelectric vibrators such as quartz vibrators are lead types having lead terminals, and lead type quartz vibrators have a relatively large quartz crystal resonator piece to be used compared to the surface mount type. Therefore, stable oscillation can be obtained.

  The heat generated from the heat source can be transmitted to the piezoelectric vibrator by the heat transfer plate as described above to heat the piezoelectric vibrator, and is also transmitted to the lead terminal of the heat source. Therefore, even if a lead type temperature sensor is not arranged close to the lead type piezoelectric vibrator, the piezoelectric vibration is detected by arranging the temperature sensor near the lead terminal of the heat source and detecting the temperature of the lead terminal. It becomes possible to detect the temperature of the child indirectly. In the temperature control circuit, the temperature of the piezoelectric vibrator can be controlled by controlling the heating by the heat source based on the detected temperature detected by the temperature sensor.

  Since the temperature sensor only needs to detect the temperature at the position close to the lead terminal of the heat source, a surface-mount type temperature sensor can be used, and it can be mounted on a substrate together with other chip components. Therefore, the assembling workability is excellent as compared with the lead type temperature sensor that detects the temperature of the proximity position of the lead type piezoelectric vibrator.

  (2) In a preferred embodiment of the present invention, the heat source is a power transistor, the temperature sensor is a thermistor, and the power transistor has a heat radiating plate connected to a collector of a built-in transistor chip, The vibrator has a metal case with a built-in vibrating piece, the heat dissipation plate of the power transistor and the case of the piezoelectric vibrator are soldered to the heat transfer plate, respectively, and the thermistor is The power transistor is disposed close to the collector lead terminal.

  According to this embodiment, the heat dissipation plate connected to the collector of the transistor chip of the power transistor and the metal case of the piezoelectric vibrator are thermally coupled to the heat transfer plate by solder bonding, respectively. The heat generated by the collector of the chip can be transmitted from the heat radiating plate to the metal case of the piezoelectric vibrator through the solder, the heat transfer plate and the solder without any waste, and the vibrating piece inside the case can be heated.

  Further, the thermistor, which is a temperature sensor, is connected to the collector of the transistor chip of the power transistor and is disposed close to the collector lead terminal to which the heat generated by the collector of the transistor chip is transmitted. By detecting, it is possible to indirectly detect the temperature of the piezoelectric vibrator in which the heat generated by the collector of the transistor chip is transmitted through the heat dissipation plate and the heat transfer plate and heated.

  (3) In the embodiment of (2), the substrate has a land pattern to which the collector lead terminal of the power transistor is connected and a land pattern to which the terminal of the thermistor is connected. It has a conductive pattern to connect the patterns.

  According to this embodiment, the heat generation at the collector lead terminal of the power transistor is transmitted from the land pattern to which the collector lead terminal of the power transistor is connected to the land pattern to which the terminal of the thermistor is connected via the conductive pattern. Then, it is possible to accurately detect the temperature of the collector lead terminal of the power transistor.

  (4) In another embodiment of the present invention, power is transmitted from the central portion of the transistor chip of the power transistor to the central portion of the resonator element of the piezoelectric vibrator via the heat radiating plate and the heat transfer plate. The heat distance and the heat transfer distance from the central portion of the transistor chip to the thermistor through the collector lead terminal and the substrate are substantially the same.

  According to this embodiment, heat transfer from the transistor chip of the power transistor to the vibrating piece of the piezoelectric vibrator through the heat dissipation plate and the heat transfer plate, and heat transfer from the transistor chip to the thermistor through the collector lead terminal and the substrate. Is equivalent. Thus, by detecting the temperature of the collector lead terminal of the power transistor at a position away from the piezoelectric vibrator, it becomes possible to detect the temperature of the piezoelectric vibrator indirectly and accurately.

  (5) In a preferred embodiment of the present invention, the heat transfer plate has a rectangular flat plate portion, and the piezoelectric vibrator and the power transistor are arranged in parallel along the longitudinal direction of the flat plate portion. .

  According to this embodiment, the piezoelectric vibrator and the power transistor that are thermally coupled to the rectangular flat plate portion of the heat transfer plate are arranged in parallel along the longitudinal direction of the flat plate portion. Heat can be transmitted in the longitudinal direction through the flat plate portion to efficiently heat the piezoelectric vibrator.

  (6) In another embodiment of the present invention, the piezoelectric vibrator is a quartz crystal vibrator.

  According to this embodiment, it can be suitably implemented as a crystal oscillator.

  According to the present invention, since the piezoelectric vibrator and the heat source are thermally coupled to the heat transfer plate that is thinner than the metal block, the heat generated from the heat source is efficiently and efficiently generated by the heat transfer plate. The piezoelectric vibrator can be heated by being transmitted to the child, and can be reduced in size and height as compared with the conventional example using a metal block.

  In addition, since a piezoelectric vibrator such as a quartz vibrator is a lead type having a lead terminal, since the used quartz vibrating piece is relatively large compared to the surface mount type, the Q value is high and stable oscillation is achieved. Can be obtained.

  Furthermore, since the temperature of the piezoelectric vibrator is indirectly detected by detecting the temperature at the position close to the lead terminal of the heat source, the surface mount type temperature sensor can be used, and other chip parts At the same time, it can be mounted on a substrate. As a result, the assembly workability is excellent compared to the lead type temperature sensor, and the manufacturing cost can be reduced accordingly.

1 is an external perspective view of a crystal oscillator according to an embodiment of the present invention. It is the perspective view which decomposed | disassembled the principal part of the crystal oscillator of FIG. It is a top view of the crystal oscillator of FIG. FIG. 2 is a partially cutaway front view of the crystal oscillator of FIG. 1. It is a side view of the crystal oscillator of FIG. It is a top view of the attachment part of the thermistor of FIG. It is a circuit diagram of the temperature control circuit of the crystal oscillator of FIG. It is a schematic plan view which shows the installation position from which a thermistor differs. It is a characteristic view corresponding to each installation position of the thermistor. It is a top view which shows the other example of the attachment part of the thermistor of FIG.

  Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. In the present embodiment, description will be made by applying to a crystal oscillator as a piezoelectric oscillator.

  1 is an external perspective view of a crystal oscillator according to an embodiment of the present invention, FIG. 2 is an exploded perspective view of the main part thereof, FIG. 3 is a plan view of the crystal oscillator, and FIG. FIG. 5 is a side view of the crystal oscillator, and in each figure, the cover 8 is indicated by an imaginary line.

  The crystal oscillator according to this embodiment includes a shallow rectangular tray-shaped metal base 1 and a printed circuit board (hereinafter referred to as “substrate”) supported by the base 1 via a plurality (five) of external lead terminals 2. 3), a crystal resonator 4 inserted and supported on the substrate 3, a power transistor 5 as a heat source for heating the crystal resonator 4, and the crystal resonator 4 and the power transistor 5 on the inner surface facing downward, which will be described later. And a thermistor 7 as a temperature sensor for detecting the temperature of the crystal unit 4 and the outer periphery of the base 1 are externally fitted and fixed from above. The metal cover 8 is provided.

  An insulating member made of glass or the like is interposed between the base 1 and each of the plurality of external lead terminals 2 so that the external lead terminal 2 is supported through the base 1 in an electrically insulated state. .

  Land patterns are formed on the upper and lower surfaces of the substrate 3, and various electronic components constituting an oscillation circuit, a temperature control circuit, and the like are soldered and connected by reflow.

  The crystal resonator 4 of this embodiment is a lead type crystal resonator having a high Q value because the crystal resonator element used is relatively larger than the surface mount type so that stable oscillation can be obtained. It is. The two lead terminals 4 a extending from the bottom of the crystal unit 4 are extended in parallel to the substrate 3, bent toward the substrate 3, and inserted into through holes of a predetermined land pattern 10. Solder connection.

  The power transistor 5 is also of a lead type, and the three lead terminals 5a extending from one end of the mold resin 5c are extended in parallel to the substrate 3 and then bent toward the substrate 3 to form a predetermined land pattern. 11 is inserted into the through hole and soldered.

  The crystal unit 4 and the power transistor 5 are provided so that the upper surfaces thereof are at the same height from the substrate 3.

  In the crystal unit 4, a crystal vibrating piece such as an AT-cut is hermetically sealed in a metal case composed of a flat long cylindrical cap 4b having a closed upper end and a bottom portion. As shown, the two lead terminals 4a extend. The crystal vibrating piece is formed with a pair of excitation electrodes and each extraction electrode extracted from the pair of excitation electrodes, and each extraction electrode is joined to each of the pair of lead terminals 4a.

  Each lead terminal 4a is inserted through an insertion hole at the bottom of a metal case, and the insertion hole and the lead terminal 4a are insulated by hermetic glass or the like.

  The power transistor 5 includes a mold resin 5c that covers a built-in transistor chip, and the lead terminal 5a extends from one end of the mold resin 5c. As for the power transistor 5, the heat sink 5d connected to the collector of the transistor chip is exposed on the upper surface.

  In this embodiment, as described above, the hot plate 6 in which the crystal unit 4 and the power transistor 5 are thermally coupled is provided. The hot plate 6 is made of a material having excellent thermal conductivity, for example, white, a metal material such as copper or aluminum, in this example, white.

  The hot plate 6 covers the upper surface of the cap 4b of the crystal unit 4 substantially completely and flatly covers a flat rectangular plate portion 6a that completely covers the upper surface of the power transistor 5, and is bent downward from both ends of the flat plate portion 6a. A pair of bent portions 6b and 6c are provided, and are provided so as to surround the upper surface and side surfaces of the power transistor 5 and the crystal resonator 4 with the substrate 3. The flat plate portion 6a is not limited to a rectangle but may have another shape as long as heat generated from the power transistor 5 can be transmitted to the crystal unit 4.

  The pair of bent portions 6b and 6c ensure the rigidity of the entire heat plate 6 by its reinforcing function. The plane accuracy of the flat plate portion 6a where the crystal unit 4 and the power transistor 5 are thermally coupled is ensured. A small leg portion 6d extends from the side close to the power transistor 5, that is, from the center of one bent portion 6b near the power transistor 5, while the side close to the crystal unit 4, that is, close to the crystal unit 4. A pair of small leg portions 6e extend from both ends of the other bent portion 6c. The hot plate 6 is stably connected and fixed to the substrate 3 by three-point support via the three legs 6d and 6e so that the flat plate portion 6a is parallel to the substrate 3.

  The hot plate 6 can be formed, for example, by bending a plate-like material produced by punching at right angles along each side at both ends in the longitudinal direction of the flat plate portion 6a.

  The upper surfaces of the crystal unit 4 and the power transistor 5 that are arranged so that the upper surfaces thereof are at the same height from the substrate 3 are formed as flat surfaces.

  In this embodiment, the heat radiation plate 5d on the upper surface of the power transistor 5 is joined to the downward inner surface of the flat plate portion 6a of the hot plate 6, that is, the inner surface facing the substrate 3, by soldering (not shown), thereby being thermally coupled. At the same time, the upper surface of the metal cap 4b of the crystal unit 4 is thermally coupled by being joined by solder (not shown).

  The term “thermally coupled” refers to a state where heat conduction is performed by the direct contact or direct contact between the heat plate 6 and the power transistor 5 or the crystal unit 4. Therefore, the hot plate 6 and the power transistor 5 or the crystal unit 4 may be directly pressed against each other without interposing solder or the like.

  In this embodiment, before the crystal resonator 4 and the power transistor 5 are mounted on the substrate 3, cream solder is applied to the downward inner surface of the flat plate portion 6a of the hot plate 6 in advance, and the cream solder is applied to the position. After the upper surfaces of the heat radiating plate 5d of the power transistor 5 and the cap 4b of the crystal resonator 4 are set, soldering is performed by reflow.

  Thus, the heat sink 5d directly connected to the collector, which is the heat generating portion of the transistor chip built in the power transistor 5, is soldered to the downward inner surface of the flat plate portion 6a of the hot plate 6, and the metal of the crystal unit 4 is made. Since the flat upper surface of the cap 4b is soldered to the downward inner surface of the flat plate portion 6a of the hot plate 6, the heat generated at the collector of the transistor chip of the power transistor 5 is heated from the heat sink 5d directly connected to the collector. It is efficiently transmitted without waste to the upper surface of the metal cap 4b of the crystal unit 4 through the conductive hot plate 6, and the crystal vibrating piece inside the cap 4b can be heated.

  As described above, the heat plate 6 which is thinner than the metal block efficiently transmits the heat generated from the power transistor 5 to the crystal unit 4 to heat the crystal unit 4. Therefore, it is possible to reduce the size and height.

  The heat generated from the power transistor 5 is transmitted to the crystal unit 4 by the heat plate 6 as described above to heat the crystal unit 4, while a part of the heat generated from the power transistor 5 is built in the power transistor 5. The data is also transmitted from the collector of the transistor chip to the collector lead terminal 5a (c) which is the lead terminal 5a connected to the collector.

  In this embodiment, a temperature sensor is not disposed in the vicinity of the crystal unit 4 to detect the temperature of the crystal unit 4, but a collector lead terminal 5a (to which heat is transmitted from the transistor chip of the power transistor 5 is transmitted). The temperature of the crystal resonator 4 is indirectly detected by detecting the temperature of the proximity position of c) with the thermistor 7.

  That is, the thermistor 7 as a temperature sensor is a surface-mount type, is placed on a pair of land patterns 12 exposed at a predetermined position of the substrate 3, and is soldered and connected together with other chip components by a reflow process. .

  When the temperature of the crystal unit 4 is detected by using a lead type thermistor instead of the surface mount type, the temperature sensing part of the lead type thermistor is positioned close to the crystal unit 4 on the inner surface of the hot plate 6. The thermistor lead terminals must be inserted into the through-holes of the substrate 3 and connected by soldering, which makes the assembly work troublesome.

  On the other hand, since the thermistor 7 of this embodiment is a surface mount type, it can be mounted on the substrate 3 together with other chip components as described above, compared with the case of using a lead type thermistor. Thus, the manufacturing cost can be reduced.

  In this embodiment, the thermistor 7 can accurately detect the temperature of the crystal unit 4 from the transistor chip 5b at the central portion of the power transistor 5 shown in FIG. The heat transfer distance D1 reaching the crystal vibrating piece 4c at the center portion of the crystal resonator 4 and the collector lead terminal 5a (c) and the land patterns 11 and 12 from the transistor chip 5b at the center portion of the power transistor 5 shown in FIG. And the heat transfer distance D2 reaching the thermistor 7 through the heat sink is substantially the same. Here, the term “same” is not limited to the case of being completely the same, but includes an error within a certain range, for example, about 10 to 20%.

  FIG. 6 is a plan view showing a mounting portion of the thermistor 7. As shown in FIG. 6, the thermistor 7 is disposed in the vicinity of the collector lead terminal 5 a (c) connected to the collector of the transistor chip among the lead terminals 5 a extending from the power transistor 5.

  Here, the proximity position means that the entire thermistor 7 is located within a circular area within a radius of 4.0 mm, preferably within 3.0 mm from the center of the through hole through which the collector lead terminal 5a (c) is inserted. That is close to the degree.

  In this embodiment, one land pattern 12 to which the thermistor 7 is soldered is connected to the land pattern 11 (c) to which the collector lead terminal 5 a (c) of the power transistor 5 is soldered via the conductive pattern 13. Connected. As a result, heat generated from the transistor chip of the power transistor 5 is efficiently transmitted to the thermistor 7 through the collector lead terminal 5a (c), its land pattern 11 (c) and the conductive pattern 13.

  Note that the conductive pattern 13 shown in FIG. 6 is from one rectangular land pattern 12 on the side closer to the land pattern 11 (c) than the conductive pattern 13 having the shape shown in FIG. The drawer position is different. That is, the conductive pattern 13 shown in FIG. 6 is drawn from both ends of the long side of the one rectangular land pattern 12 on the side away from the land pattern 11 (c). On the other hand, the conductive pattern 13 shown in FIG. 10 has both ends of the long side of one rectangular land pattern 12 on the side close to the land pattern 11 (c) on the side close to the land pattern 11 (c). Has been drawn from. The conductive pattern 13 shown in FIG. 6 is easier to transfer heat generated from the transistor chip of the power transistor 5 by the thermistor 7 than the conductive pattern 13 shown in FIG.

  The conductive pattern 13 is formed in the same process using the same metal as the land patterns 11 and 12.

  The temperature detected by the thermistor 7 is input to the temperature control circuit of the power transistor 5 as described later, and the energization of the power transistor 5 is controlled so that the temperature of the crystal unit 4 becomes a predetermined temperature.

  FIG. 7 is a circuit diagram of the temperature control circuit of this embodiment. As shown in the figure, the temperature control circuit includes the thermistor 7, the power transistor 5, a differential amplifier IC1, and resistors R1 to R5.

  The power transistor 5 of this embodiment is an NPN type bipolar transistor, and its base is connected to the output terminal of the differential amplifier IC1, while its collector is connected to the power supply terminal Vcc and the thermistor 7 as described above. The emitter is connected to the ground terminal GND. In the power transistor 5, a current flows between its collector and emitter in proportion to the output voltage of the differential amplifier IC1 applied to the base, and heat is generated according to the current.

  In this temperature control circuit, when the temperature of the crystal unit 4, that is, the temperature of the collector lead terminal 5 a (c) of the power transistor 5 rises, the resistance value of the thermistor 7 decreases and the output voltage of the differential amplifier IC 1 is reduced. As a result, the amount of heat generated by the power transistor 5 decreases, and the temperature rise of the crystal unit 4 is suppressed.

  On the other hand, when the temperature of the crystal unit 4, that is, the temperature of the collector lead terminal 5 a (c) of the power transistor 5 decreases, the resistance value of the thermistor 7 increases, the output voltage of the differential amplifier IC 1 increases, and the power The amount of heat of the transistor 5 increases, and the temperature drop of the crystal unit 4 is suppressed. In this way, the temperature of the crystal unit 4 is controlled to a predetermined temperature.

  Next, the relationship between the installation position of the thermistor 7 and the characteristics of the crystal oscillator will be described.

  As shown in the schematic plan view of FIG. 8, the installation position of the thermistor 7 on the substrate 3 is set to the first position P1 near the crystal unit 4 which is one end portion in the longitudinal direction of the hot plate 6 and the first embodiment of the above embodiment. Each characteristic in the case of being installed at the second position P2 and the third position P3 closer to the outer side of the substrate 3 than the second position P2 was measured.

  FIG. 9 shows the measurement results. The line L1 indicates the temperature t (° C.) of the thermostatic chamber constituted by the base 1 and the cover 8 calculated from the oscillation frequency, and the line L2 indicates the power transistor 5. The current I (A) flowing through (A), (b), and (c) correspond to the first position P1, the second position P2, and the third position P3, respectively.

  The first position P1 on the substrate 3 is away from the collector lead terminal 5a (c) of the power transistor 5 and away from the cap 4b constituting the case of the crystal unit 4. For this reason, as shown by the line L1 in FIG. 9A, the temperature t of the thermostatic chamber greatly fluctuates, and accordingly, the current I flowing through the power transistor 5 also fluctuates greatly as shown by the line L2.

  The power transistor 5 is disposed close to the collector lead terminal 5a (c) and connected to the land pattern 12 connected to the land pattern 11 (c) of the collector lead terminal 5a (c) by the conductive pattern 13. In the second position P2 of the embodiment, as shown in the line L1 in FIG. 9B, the temperature t of the thermostatic bath is maintained at a constant temperature, and the current flowing through the power transistor 5 is also shown in the line L2. A relatively low constant current is maintained, and good characteristics are obtained.

  At the third position P3, which is closer to the outside of the substrate 3 than the second position P2, the temperature t of the thermostat is maintained at a constant temperature, as shown by the line L1 in FIG. The flowing current greatly fluctuates in a short cycle as indicated by the line L2.

  Thus, the said embodiment which installed the thermistor 7 in the 2nd position P2 had the most favorable characteristic.

[Other Embodiments]
The present invention can also be implemented in the following forms.

  (1) The conductive pattern 13 for conductively connecting the land pattern 11 (c) to which the collector lead terminal 5a (c) of the power transistor 5 is connected and the one land pattern 12 to which the thermistor 7 is connected is not limited to the above shape. Instead, for example, the shape shown in FIG.

  (2) In the above embodiment, the power transistor is described as a heat source for heating the crystal unit 4, but a resistor or the like can be used as the heat source, not limited to the power transistor.

  The power transistor 5 is not limited to a bipolar transistor, and may be a field effect transistor (FET). In this case, it is only necessary to detect the temperature in the vicinity of the drain terminal among the lead terminals of the field effect transistor.

  The thermistor 7 is an NTC thermistor whose resistance value decreases as the temperature rises. However, the thermistor 7 is not limited to this, and a PTC thermistor whose resistance value increases as the temperature rises can also be used.

  In the above embodiment, the quartz oscillator using quartz as a piezoelectric material has been described. However, the present invention can also be applied to a piezoelectric oscillator using a piezoelectric material other than quartz.

3 Substrate 4 Crystal resonator 5 Power transistor (heat source)
5a Lead terminal 5a (c) Collector lead terminal 6 Heat plate (heat transfer plate)
6a Flat plate part 6b Bending part 6c Bending part 6d Leg part 6e Leg part 7 Thermistor (temperature sensor)
11 Land pattern 11 (c) Land pattern for collector lead terminal 12 Land pattern 13 Conductive pattern

Claims (6)

In a piezoelectric oscillator comprising a substrate to which a lead terminal of a piezoelectric vibrator and a lead terminal of a heat source for heating the piezoelectric vibrator are connected,
A heat transfer plate to which the piezoelectric vibrator is thermally coupled and the heat source is thermally coupled;
A surface mount type temperature sensor disposed in proximity to the lead terminal of the heat source;
A temperature control circuit that controls heating by the heat source based on a temperature detected by the temperature sensor;
A piezoelectric oscillator characterized by that. The heat source is a power transistor;
The temperature sensor is a thermistor;
The power transistor has a heat sink connected to a collector of a built-in transistor chip,
The piezoelectric vibrator has a metal case with a built-in vibrating piece,
The heat dissipation plate of the power transistor and the case of the piezoelectric vibrator are soldered to the heat transfer plate, respectively.
The thermistor is disposed close to the collector lead terminal of the power transistor,
The piezoelectric oscillator according to claim 1. The substrate has a land pattern to which the collector lead terminal of the power transistor is connected, a land pattern to which the thermistor terminal is connected, and a conductive pattern that connects the land patterns.
The piezoelectric oscillator according to claim 2. The heat transfer distance from the central part of the transistor chip of the power transistor to the central part of the vibrating element of the piezoelectric vibrator via the heat radiating plate and the heat transfer plate, and the central part of the transistor chip from the central part of the transistor chip The heat transfer distance reaching the thermistor through the collector lead terminal and the substrate is substantially the same.
The piezoelectric oscillator according to claim 2 or 3. The heat transfer plate has a rectangular flat plate portion,
The piezoelectric vibrator and the power transistor are arranged in parallel along the longitudinal direction of the flat plate portion,
The piezoelectric oscillator according to claim 2. The piezoelectric vibrator is a crystal vibrator;
The piezoelectric oscillator according to claim 1.

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