JP6625114B2 - 官能性星型高分子を含む薄膜複合メンブレンおよびその製造方法 - Google Patents
官能性星型高分子を含む薄膜複合メンブレンおよびその製造方法 Download PDFInfo
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- JP6625114B2 JP6625114B2 JP2017500814A JP2017500814A JP6625114B2 JP 6625114 B2 JP6625114 B2 JP 6625114B2 JP 2017500814 A JP2017500814 A JP 2017500814A JP 2017500814 A JP2017500814 A JP 2017500814A JP 6625114 B2 JP6625114 B2 JP 6625114B2
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- B—PERFORMING OPERATIONS; TRANSPORTING
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Description
図1を参照すると、NFメンブレン10は、支持織布12、多孔質中間層14、一般にポリスルホン(PSF:polysulfone)、及び障壁層16を含む。この多層構築物は、薄膜複合メンブレン(TFC:Thin Film Composite membrane)と称される。障壁層は分離性能の制御に重要な役割を果たし、支持層は十分な機械的強度を付与し、したがってTFC複合メンブレン10は外部運転圧力に耐えることができる。
核磁気共鳴分光法(NMR:Nuclear Magnetic Resonance Spectroscopy):星型高分子の1H NMRスペクトルを外径(o.d.:outside diameter)5mmの管を用いたBruker Avance 2000分光計(400MHz)によって得た。内部残留溶媒(1H、CDCl3:デルタ=7.24)を基準にした。
SPPを下記反応スキーム1に従って調製した。
SPNを下記スキーム2に従って調製した。
星型高分子の多層集合をモニタするために、Cr(5nm)、金(50nm)及びSiO2(4nm)で順次被覆されたガラス基板(Schott SF11)上でSPR分析を行った。基板表面をアミノ官能性星型高分子(SPP)の0.1%(w/v)水溶液にさらし、続いてPBSリンスすると、そのバックグラウンド信号(三角形の黒色曲線:1Xリン酸緩衝液)から共鳴角がシフトし、基板上に形成されたSPP星型高分子の薄層を示す(円の曲線)。こうして形成されたアミノ官能性表面をカルボン酸官能性星型高分子(SPN)の0.1%(w/v)水溶液に続いてさらすと、共鳴角が更にシフトし、SPP改質基板表面のSPN堆積が確認された(正方形の曲線)。得られた基板をSPPとSPNの交互の溶液に順次複数回さらすと(星型高分子堆積のたびに基板をPBSでリンスした)、共鳴角が極めて均一な間隔で連続的にシフトし、分子薄膜が基板上に十分制御されて多層集合することが実証された(図8)。フィルム形成の駆動力は、恐らく、初期には、酸性表面官能性と星型高分子SPPの塩基性末端アミノ基の強い相互作用から生じる。SPNの酸性基とSPP由来のアミノ官能性表面の同様の相互作用によって、逐次的な多層堆積が行われる。堆積する高分子と表面の官能性の多価相互作用のみが持続的に重要であり、過剰の高分子堆積は電荷の反発によってある程度阻止されるので、この自己組織化プロセスは自己制御的である。補足的に官能化された表面と直接的に相互作用しない高分子材料は、洗浄によって容易に除去された。
ポリスルホン(PSF)UFメンブレンをUV−オゾンで40秒間前処理して、表面負電荷及び親水性を増加させた。次いで、前処理PSFメンブレンを枠内に配置し、メンブレンの上面を正電荷星型高分子(SPP)の0.1wt%水溶液に15分間さらし、続いて脱イオン水でリンスした。続いて、SPP飽和メンブレンを負電荷星型高分子(SPN)の0.1wt%水溶液に15分間さらし、脱イオン水で再度リンスして、完全な二重層堆積サイクル(1LBL)を得た。同じ手順を繰り返して、2LBL、3LBL及び4LBL厚さの星型高分子膜を形成した。LBL集合メンブレン及び未改質PSFメンブレンの表面形態をAFMによって走査し、図5に示す。
分子染料溶液(100ppm、レッド・コンゴ)を供給液として用いて(Sterlitech Corp.から入手可能な)撹拌デッドエンド濾過セルによって濾過を行った。運転圧力は、星型高分子膜の層厚に応じて20psi(138kPa)から100psi(689kPa)まで変動した(0LBL:20psi(138kPa)、1〜2LBL:50psi(345kPa)、及び3〜4LBL:100psi(689kPa))。供給液と透過液の染料濃度を紫外可視分光法(HP/アジレント8453ダイオードアレイUV/VIS分光光度計)によって測定することによって染料分離率を計算した。流量及び染料分離率を図6に要約し、LBL改質メンブレンの耐汚染効率を図7に示した。
Claims (8)
- 活性層を多孔質支持体上に含む薄膜複合メンブレン(TFC)であって、
前記活性層は、星型高分子の少なくとも8層の障壁層を含み、
前記星型高分子は、中心核において結合した少なくとも3つの線状高分子を含み、
前記障壁層の各々は厚さが5から50nmであり、
前記障壁層は交互の電荷を有し、
前記障壁層の、少なくとも1層がカルボキシル部分を有する負電荷星型高分子を含み、他の少なくとも1層がアンモニウム部分を有する正電荷星型高分子を含む、
薄膜複合メンブレン。 - 前記障壁層が静電相互作用によって互いに付着している、請求項1に記載のメンブレン。
- 星型高分子の交互の層の前記障壁層の少なくとも1層が水素結合によって他の1層に付着している、請求項1に記載のメンブレン。
- 前記障壁層の少なくとも1層が電気的に中性な親水性表面官能性部分を含む、請求項2に記載のメンブレン。
- 前記多孔質支持体の平均孔径が1から50nmの範囲である、請求項1に記載のメンブレン。
- 薄膜複合メンブレンを製造する方法であって、
a)第1の表面電位を有する多孔質支持メンブレンの表面を第1の溶液にさらして、第1の帯電障壁層を前記表面に形成すること、ここで、前記第1の溶液は第1の星型高分子を第1の溶媒中に含み、前記第1の星型高分子は前記第1の表面電位と反対の第2の表面電位を有する、
b)前記第1の帯電障壁層を第2の溶液にさらして、第2の帯電障壁層を前記第1の帯電障壁層上に形成すること、ここで、前記第2の溶液は、第2の溶媒、及び前記第2の表面電位と反対の第3の表面電位を有する第2の星型高分子を含む、及び
c)ステップa)及びb)を繰り返して少なくとも8層の障壁層の積層体を前記支持メンブレン上に形成すること、ここで、前記障壁層の各々は自己組織化星型高分子を含み、前記第1の帯電障壁層または前記第2の帯電障壁層のいずれか一方はカルボン酸官能性星型高分子を含み、もう一方はアミノ官能性星型高分子を含む、
を含む方法。 - 前記障壁層が浸漬被覆、スピンニング又は噴霧塗装、及びそれらの組合せによって施される、請求項6に記載の方法。
- 前記多孔質支持メンブレンの平均孔径が1から50nmの範囲である、請求項6に記載の方法。
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US9782727B2 (en) | 2017-10-10 |
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GB201701201D0 (en) | 2017-03-08 |
GB2543454B (en) | 2017-10-11 |
DE112015002787B4 (de) | 2019-11-14 |
US20160008769A1 (en) | 2016-01-14 |
US10906007B2 (en) | 2021-02-02 |
CN106659984B (zh) | 2019-01-18 |
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