JP6609928B2 - Capacitor mounting structure and power converter - Google Patents

Description

  The present invention relates to the structure of a power converter. In particular, the present invention relates to a capacitor mounting structure in a power converter.

  A general power converter 14 includes a smoothing capacitor 2 and a semiconductor power module 3 as shown in FIG. The smoothing capacitor 2 is provided side by side on one of the P-side conductor 15 and the N-side conductor 16.

  The P-side conductor 15 is a plate-like conductor connected to the electrode 2 a of the smoothing capacitor 2, and the N-side conductor 16 is a plate-like conductor connected to the electrode 2 b of the smoothing capacitor 2. The P-side conductor 15 and the N-side conductor 16 are laminated via the insulating plate 6 to constitute a laminated body 17. The smoothing capacitor 2 is juxtaposed on one surface of the laminate 17. Further, a connecting portion 15a of the P-side conductor 15 and a connecting portion 16a of the N-side conductor 16 protrude from one end portion of the multilayer body 17, and the semiconductor power module 3 is connected to the connecting portions 15a and 16a.

  As described above, in the power conversion device 14 according to the related art, the smoothing capacitor 2 is arranged on the same side of the conductor 15 or the conductor 16, and the P-side conductor 15 and the N-side conductor 16 are connected to the smoothing capacitor 2 (for example, Patent Document 1).

JP 2006-19367 A JP 2008-269833 A Japanese Utility Model Publication No. 2012-79904

  However, when the smoothing capacitors are arranged side by side on one surface of the multilayer body and the semiconductor power module is provided on the same surface as the smoothing capacitor placement surface of the multilayer body, the distance between the semiconductor power module and each smoothing capacitor will be different. . If the difference in the distance between the smoothing capacitor provided near the semiconductor power module and the smoothing capacitor provided at a position far from the semiconductor power module becomes large, the current sharing of each smoothing capacitor may be biased. Further, the distance from the semiconductor power module is increased as a whole of the smoothing capacitor, and the circuit loop becomes large. As a result, the inductance of the circuit may increase.

  In view of the above circumstances, an object of the present invention is to provide a technology that contributes to reducing the inductance of a circuit by reducing the bias in current sharing of the capacitor.

The capacitor mounting structure of the present invention that achieves the above-mentioned object is as follows.
A plurality of capacitors connected in parallel ;
A first conductor plate and a second conductor plate to which the electrodes of the capacitor are connected;
A switching element connected to the first conductor plate or the second conductor plate, and a capacitor mounting structure for a power converter,
A laminate is formed by laminating the first conductor plate and the second conductor plate via an insulating plate ,
Wherein the electrode connecting portions of the capacitor provided on one surface of the laminate, so that the electrode connecting portion of the capacitor provided on the other surface of the laminate does not overlap, the the one surface of the laminate A plurality of capacitors are provided on each of the other surfaces of the laminate ,
The first conductor plate and the second conductor plate each include a connection portion connected to the switching element,
The capacitor includes a pair of electrodes that are conductively provided by being fixed to the first conductor plate and the second conductor plate via terminal screws, respectively.
The capacitor is alternately provided on one surface and the other surface of the multilayer body along an end portion of the multilayer body where the connection portions of the first conductor plate and the second conductor plate are provided, and A pair of terminal screws provided from the first conductor plate side with respect to the pair of electrodes of the capacitor on the second conductor plate side are located between two capacitors adjacent to each other on the first conductor plate side. A pair of terminal screws provided from the second conductor plate side with respect to the pair of electrodes of the capacitor on the first conductor plate side are positioned between two capacitors adjacent to each other on the second conductor plate side. ,
The capacitor provided adjacent to the first conductor plate side and the second conductor plate side across the multilayer body is provided such that the electrode connection portions of the pair of electrodes face each other in the direction in which the capacitor is adjacent. It is characterized in that was.

  Moreover, the power converter of the present invention that achieves the above object is characterized by having the capacitor mounting structure.

  According to the above invention, the uneven current sharing of the smoothing capacitor can be reduced, and the inductance of the circuit can be reduced.

(A) The principal part front view of the power converter device which concerns on 1st Embodiment of this invention, (b) A direction arrow view of the power converter device, (c) The rear view of the power converter device, (d) The same. It is a B direction arrow line view of a power converter device. (A) The principal part front view of the power converter device which concerns on 1st Embodiment of this invention provided with the support metal plate, (b) C direction arrow view of the power converter device, (c) The back surface of the power converter device (D) It is a D direction arrow directional view of the same power converter device. It is a circuit diagram of the power converter concerning a 1st embodiment of the present invention. It is a principal part disassembled perspective view of the power converter device which concerns on 1st Embodiment of this invention. (A) The principal part front view of the power converter device which concerns on 2nd Embodiment of this invention, (b) E direction arrow view of the power converter device, (c) F direction arrow view of the power converter device, ( d) E direction view of the power converter with the support sheet metal removed, (e) F direction arrow view of the power conversion apparatus with the support sheet metal removed, (f) G direction arrow view of the power conversion apparatus. (G) G direction arrow line view of the same power converter device which omitted a semiconductor power module. It is the principal part perspective view which abbreviate | omitted the semiconductor power module of the power converter device which concerns on 2nd Embodiment of this invention. (A) Front view of main part of power converter according to prior art, (b) H direction view of power converter, (c) Rear view of power converter, (d) I of power converter. FIG.

  A capacitor mounting structure and a power converter according to an embodiment of the present invention will be described in detail with reference to the drawings.

[First Embodiment]
As shown in FIG. 1A, the power conversion device 1 according to the first embodiment of the present invention includes a smoothing capacitor 2 and a semiconductor power module 3. The smoothing capacitor 2 is provided on the P-side conductor 4 or the N-side conductor 5. The P-side conductor 4 and the N-side conductor 5 are plate-like conductors, and are laminated via an insulating plate 6 to constitute a laminate 7.

  As shown in FIG. 1B, the smoothing capacitor 2 is provided on the P-side conductor 4 or the N-side conductor 5. The electrode 2 a of each smoothing capacitor 2 is connected to the P-side conductor 4, and the electrode 2 b is connected to the N-side conductor 5.

  More specifically, as shown in FIG. 1A, the electrode 2 a of the smoothing capacitor 2 provided on the N-side conductor 5 is fixed in a state where it is electrically connected to the P-side conductor 4 by the terminal screw 8. . Further, the electrode 2b of the smoothing capacitor 2 provided on the N-side conductor 5 is electrically connected to the N-side conductor 5 by the terminal portion screw 8 and fixed. That is, the hole 4a is formed in the P-side conductor 4 near the electrode 2b of the smoothing capacitor 2 provided on the N-side conductor 5, and the terminal screw 8 is provided on the electrode 2b from the P-side conductor 4 side. The electrode 2b is provided in conduction with the N-side conductor 5. The insulating plate 6 has a hole 6a communicating with the hole 4a. Similarly, as shown in FIG. 1C, the electrode 2 a of the smoothing capacitor 2 provided on the P-side conductor 4 is provided in conduction with the P-side conductor 4 by the terminal screw 8, and the P-side conductor 4. The electrode 2b of the smoothing capacitor 2 provided above is provided in conduction with the N-side conductor 5 by the terminal screw 8. That is, the N-side conductor 5 is different in the position of the portion to be taken out to the semiconductor power module 3, but the connection part of the electrodes 2 a and 2 b of the smoothing capacitor 2 has the same shape as the P-side conductor 4. Therefore, the N-side conductor 5 has a hole 5a for providing the terminal screw 8 on the electrode 2a provided on the P-side conductor 4 from the N-side conductor 5 side. The insulating plate 6 has a hole 6a communicating with the hole 5a.

  Further, as shown in FIG. 1D, the smoothing capacitor 2 provided on the P-side conductor 4 and the smoothing capacitor 2 provided on the N-side conductor 5 are alternately arranged with the multilayer body 7 interposed therebetween. . That is, the smoothing capacitor 2 provided on the P-side conductor 4 and the smoothing capacitor 2 provided on the N-side conductor 5 are attached in a staggered manner facing each other so as to sandwich the multilayer body 7. More specifically, as shown in FIG. 1A, the smoothing capacitor 2 provided on the P-side conductor 4 is shifted to the right with respect to the center of the P-side conductor 4 (indicated by X in the figure). Is provided. Similarly, as shown in FIG. 1C, the smoothing capacitor 2 provided on the N-side conductor 5 is provided at a position shifted to the right side with respect to the center of the N-side conductor 5. By arranging the smoothing capacitor 2 on both surfaces of the multilayer body 7 in this way, when the P-side conductor 4 and the N-side conductor 5 are connected to the electrodes 2 a and 2 b of the smoothing capacitor 2 provided on the P-side conductor 4. The smoothing capacitor 2 provided on the N-side conductor 5 does not interfere. As a result, the terminal screw 8 can be provided from the N-side conductor 5 side to the electrodes 2 a and 2 b of the smoothing capacitor 2 provided on the P-side conductor 4. Similarly, the terminal screws 8 can be provided from the P-side conductor 4 side to the electrodes 2 a and 2 b of the smoothing capacitor 2 provided on the N-side conductor 5.

  Further, as shown in FIGS. 2A to 2D, the smoothing capacitor 2 is fixed to the support sheet metal 9. As shown in FIG. 2 (b), a bolt 2c is provided on the surface of the smoothing capacitor 2 opposite to the surface on which the electrodes 2a and 2b are provided, and is supported by fastening a nut 10 to the bolt 2c. The smoothing capacitor 2 is fixed to the sheet metal 9. In addition, as a method of attaching the smoothing capacitor 2 to the support sheet metal 9, in addition to the example of the embodiment, a method of attaching using a fixing bracket (for example, Japanese Utility Model Laid-Open No. 5-3219) or Use a method (for example, Japanese Utility Model Publication No. 61-79530) or the like in which a hole to be inserted is formed, a protrusion for holding the smoothing capacitor 2 is provided around the hole, and the smoothing capacitor 2 is attached to the support sheet metal 9. Can do.

  The semiconductor power module 3 is a power semiconductor element incorporating a switching element drive circuit such as an IGBT or a self-protection function, for example. The semiconductor power module 3 is connected to a connection portion 4 b protruding from the P-side conductor 4 and a connection portion 5 b protruding from the N-side conductor 5. The connection portion 4b protrudes from the end portion of the P-side conductor 4 parallel to the parallel arrangement direction of the smoothing capacitors 2 (rows arranged in a staggered pattern). Similarly, the connection portion 5 b protrudes from the end portion of the N-side conductor 5 that is parallel to the parallel direction of the smoothing capacitors 2.

  FIG. 3 is a circuit diagram (single-phase inverter circuit diagram) of the power conversion device 1. As shown in FIG. 3, the semiconductor power module 3 (for example, IGBT Tu) includes a switching element 3 a connected to the P-side conductor 4 and a switching element 3 b connected to the N-side conductor 5. An output conductor U is provided between the two switching elements 3a and 3b. Therefore, the semiconductor power module 3 (for example, IGBT Tu) has terminals connected to the P-side conductor 4, the N-side conductor 5, and the output conductor U. Similarly, the semiconductor power module 3 (for example, IGBTv) has terminals connected to the P-side conductor 4, the N-side conductor 5, and the output conductor V.

  Here, with reference to FIG. 4, the assembly process of the power converter device 1 is demonstrated. First, the laminate 7 is configured by laminating the P-side conductor 4 and the N-side conductor 5 via the insulating plate 6. Next, using the terminal screw 8, the connection between the electrode 2 a of the smoothing capacitor 2 and the P-side conductor 4, the connection between the electrode 2 b of the smoothing capacitor and the N-side conductor 5, the semiconductor power module 3 and the P-side conductor 4, Connection is made between the N-side conductor 5 and the output conductor U (or the output conductor V). Then, the nut 10 is fastened to the bolt 2 c and the smoothing capacitor 2 is fixed to the support sheet metal 9.

  According to the mounting structure of the power conversion device 1 and the smoothing capacitor 2 according to the first embodiment of the present invention as described above, the connection portions of the electrodes 2a and 2b of the smoothing capacitor 2 provided on the P-side conductor 4 and The smoothing capacitors 2 are alternately provided on both surfaces of the multilayer body 7 so that the connecting portions of the electrodes 2a and 2b of the smoothing capacitor 2 provided on the N-side conductor 5 do not overlap with each other. The difference in distance from the power module 3 is reduced, and the current sharing of the smoothing capacitor 2 is improved.

  Further, since the distance from the semiconductor power module 3 as the entire smoothing capacitor 2 is reduced, the circuit loop is reduced, so that the inductance of the circuit is reduced and the surge voltage generated at turn-off is suppressed.

  Further, since the mounting density of the smoothing capacitor 2 is increased, the conductors (P-side conductor 4 and N-side conductor 5) can be reduced, which contributes to cost reduction of the power conversion device 1 and miniaturization of the power conversion device 1. .

  Moreover, the earthquake resistance of the power converter device 1 improves by providing the support metal plate 9 in the smoothing capacitor 2.

[Second Embodiment]
The power converter and capacitor mounting structure according to the second embodiment of the present invention will be described in detail with reference to FIGS. In the power conversion device 11 according to the second embodiment, the smoothing capacitors 2 are arranged in a staggered manner on the multilayer body 7 in which the P-side conductor 4 and the N-side conductor 5 are stacked. It is the same as the device 1. Therefore, about the structure similar to the power converter device 1 which concerns on 1st Embodiment, the same code | symbol is attached | subjected and detailed description is abbreviate | omitted.

  As shown in FIG. 5A, the power conversion device 11 according to the second embodiment of the present invention includes a smoothing capacitor 2 and a semiconductor power module 12. As shown in FIG. 5 (f), the smoothing capacitor 2 is provided on the P-side conductor 4 or the N-side conductor 5 of the multilayer body 7. The electrode 2 a of the smoothing capacitor 2 is connected to the P-side conductor 4, and the electrode 2 b of the smoothing capacitor 2 is connected to the N-side conductor 5.

  As shown in FIGS. 5 (d) and 5 (e), the fixed portion of the electrodes 2 a and 2 b of the smoothing capacitor 2 provided on the P-side conductor 4 and the electrode of the smoothing capacitor 2 provided on the N-side conductor 5. The fixing portions 2a and 2b are provided so as not to overlap on both surfaces of the laminate 7. That is, the smoothing capacitor 2 provided on the P-side conductor 4 and the smoothing capacitor 2 provided on the N-side conductor 5 are alternately arranged in a staggered manner with respect to the multilayer body 7. Further, as shown in FIG. 5 (f), a bolt 2c is provided on the surface of the smoothing capacitor 2 opposite to the surface on which the electrodes 2a and 2b are provided, and a nut 10 is fastened to the bolt 2c. Then, the smoothing capacitor 2 is fixed to the support sheet metal 9.

  The semiconductor power module 12 is provided on the heat sink 13. The heat sink 13 is fixed to the support sheet metal 9 so as to be perpendicular to the multilayer body 7 and parallel to the parallel direction of the smoothing capacitor 2. Both ends of the P-side conductor 4 parallel to the parallel direction of the smoothing capacitor 2 extend in the direction in which the smoothing capacitor 2 is provided, and the semiconductor power module 12 is connected to the one P-side conductor 4c that extends. Is connected. Further, the other P-side conductor portion 4d extending is provided with a connection terminal to a DC power source. Similarly, both ends of the N-side conductor 5 parallel to the parallel direction of the smoothing capacitor 2 extend in the direction in which the smoothing capacitor 2 is provided, and a semiconductor power module is connected to the extended N-side conductor 5c. 12 is connected. Further, the other N-side conductor portion 5d that is extended is provided with a connection terminal to a DC power source.

  The semiconductor power module 12 is connected to the smoothing capacitor 2 via the P-side conductor 4 or the N-side conductor 5 to constitute an inverter. More specifically, the power conversion device 11 is provided with a semiconductor power module 12 in which one IGBT is provided in one package, and an extraction electrode structure is not shown, but one arm and two parallel three-phase It constitutes an inverter.

  According to the power converter 11 and the mounting structure of the smoothing capacitor 2 according to the second embodiment of the present invention as described above, the smoothing capacitors 2 are provided in a staggered manner from the front and back surfaces of the multilayer body 7 to the multilayer body 7. Thus, like the power conversion device 1 according to the first embodiment, the current sharing of the smoothing capacitor 2 is improved. And the inductance of a circuit reduces and the surge voltage which generate | occur | produces at the time of turn-off is suppressed.

  Moreover, the vibration resistance of the power converter 11 is improved by fixing the smoothing capacitor 2 and the semiconductor power module 12 with the support sheet metal 9.

  Moreover, since the mounting density of the smoothing capacitor 2 improves like the power converter device 1 according to the first embodiment, the power converter device 11 can be downsized. In particular, the end of the P-side conductor 4 extends in the direction of the smoothing capacitor 2 provided on the P-side conductor 4 (and the end of the N-side conductor 5 extends in the direction of the smoothing capacitor 2 provided on the N-side conductor 5. The mounting density of the semiconductor power module 12 and the smoothing capacitor 2 can be further improved, and the power converter 11 can be further downsized.

  The capacitor mounting structure and power conversion device of the present invention have been described in detail with reference to specific embodiments. However, the capacitor mounting structure and power conversion device of the present invention are not limited to the embodiments. In addition, the design can be changed as appropriate without departing from the characteristics of the invention, and the changed design also belongs to the technical scope of the present invention.

  For example, the circuit configuration of the power converter is not limited to the embodiment, and the capacitor mounting structure of the present invention can be applied to a power converter having a predetermined circuit configuration as appropriate. Therefore, the type of switching element, the configuration of the semiconductor power module, the circuit configuration of the power conversion device, and the like vary depending on the power conversion device applied as appropriate.

  Further, in the embodiment, a configuration in which two rows of smoothing capacitors 2 arranged in a zigzag manner from both sides with respect to the multilayer body 7 is illustrated, but the smoothing capacitor 2 is staggered from both sides with respect to the multilayer body 7. As long as they are arranged in a shape, one row or three or more rows may be arranged. In addition, the smoothing capacitor 2 can be formed by alternately arranging the smoothing capacitor 2 provided on the P-side conductor 4 and the smoothing capacitor 2 provided on the N-side conductor 5 on the multilayer body 7 in the vertical direction and the horizontal direction. The mounting density can be further improved.

1, 11 ... Power converter 2 ... Smoothing capacitor (capacitor)
2a, 2b ... Electrode 2c ... Bolts 3, 12 ... Semiconductor power modules 3a, 3b ... Switching element 4 ... P-side conductor (first conductor plate)
4a, 5a ... holes 4b, 5b ... connection portions 4c, 4d, 5c, 5d ... extended conductor portion 5 ... N-side conductor (second conductor plate)
6 ... Insulating plate 7 ... Laminate 8 ... Terminal screw 9 ... Support metal plate (fixing plate)
10 ... nut 13 ... heat sink

Claims (5)

A plurality of capacitors connected in parallel ;
A first conductor plate and a second conductor plate to which the electrodes of the capacitor are connected;
A switching element connected to the first conductor plate or the second conductor plate, and a capacitor mounting structure for a power converter,
A laminate is formed by laminating the first conductor plate and the second conductor plate via an insulating plate,
The one surface of the laminate and the electrode connection portion of the capacitor provided on one surface of the laminate are not overlapped with the electrode connection portion of the capacitor provided on the other surface of the laminate. A plurality of capacitors are provided on each of the other surfaces of the laminate,
The first conductor plate and the second conductor plate each include a connection portion connected to the switching element,
The capacitor includes a pair of electrodes that are conductively provided by being fixed to the first conductor plate and the second conductor plate via terminal screws , respectively.
The capacitor is alternately provided on one surface and the other surface of the multilayer body along an end portion of the multilayer body where the connection portions of the first conductor plate and the second conductor plate are provided, and A pair of terminal portion screws provided from the first conductor plate side is located between two capacitors adjacent to each other on the first conductor plate side with respect to the pair of electrodes of the capacitor on the second conductor plate side. A pair of terminal screws provided from the second conductor plate side with respect to the pair of electrodes of the capacitor on the first conductor plate side are located between two capacitors adjacent to each other on the second conductor plate side. ,
The capacitor provided adjacent to the first conductor plate side and the second conductor plate side across the multilayer body is provided such that the electrode connection portions of the pair of electrodes face each other in the direction in which the capacitor is adjacent. Capacitor mounting structure characterized by that.   The capacitor provided adjacent to the first conductor plate side and the second conductor plate side across the multilayer body has electrode connection portions connected to the first conductor plate adjacent to each other, and the second conductor The capacitor mounting structure according to claim 1, wherein the electrode connecting portions connected to the plate are provided adjacent to each other.   The fixed plate is provided near the end opposite to the end where the electrode of the capacitor is provided, and the capacitor is fixed to the fixed plate. Capacitor mounting structure. The first conductor plate extends in a capacitor direction provided on the first conductor plate, and a switching element is connected to the extended first conductor plate,
The second conductor plate extends in a capacitor direction provided on the second conductor plate, and a switching element is connected to the extended second conductor plate. The capacitor mounting structure according to any one of the above.   5. A power conversion device comprising the capacitor mounting structure according to claim 1.

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