JP6603303B2 - パターン形成方法、レジストパターン、電子デバイスの製造方法、及び、電子デバイス - Google Patents

パターン形成方法、レジストパターン、電子デバイスの製造方法、及び、電子デバイス Download PDF

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Publication number
JP6603303B2
JP6603303B2 JP2017501990A JP2017501990A JP6603303B2 JP 6603303 B2 JP6603303 B2 JP 6603303B2 JP 2017501990 A JP2017501990 A JP 2017501990A JP 2017501990 A JP2017501990 A JP 2017501990A JP 6603303 B2 JP6603303 B2 JP 6603303B2
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Japan
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group
compound
acid
resin
general formula
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JP2017501990A
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Japanese (ja)
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JPWO2016136354A1 (ja
Inventor
直紘 丹呉
尚紀 井上
慶 山本
三千紘 白川
研由 後藤
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Fujifilm Corp
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Fujifilm Corp
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
JP2017501990A 2015-02-26 2016-01-25 パターン形成方法、レジストパターン、電子デバイスの製造方法、及び、電子デバイス Expired - Fee Related JP6603303B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2015037170 2015-02-26
JP2015037170 2015-02-26
PCT/JP2016/052033 WO2016136354A1 (ja) 2015-02-26 2016-01-25 パターン形成方法、レジストパターン、電子デバイスの製造方法、及び、電子デバイス

Publications (2)

Publication Number Publication Date
JPWO2016136354A1 JPWO2016136354A1 (ja) 2017-08-03
JP6603303B2 true JP6603303B2 (ja) 2019-11-06

Family

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JP2017501990A Expired - Fee Related JP6603303B2 (ja) 2015-02-26 2016-01-25 パターン形成方法、レジストパターン、電子デバイスの製造方法、及び、電子デバイス

Country Status (4)

Country Link
JP (1) JP6603303B2 (ko)
KR (1) KR101992655B1 (ko)
TW (1) TWI701710B (ko)
WO (1) WO2016136354A1 (ko)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017167371A (ja) * 2016-03-16 2017-09-21 Jsr株式会社 ネガ型レジストパターン形成方法
TWI796958B (zh) * 2016-09-30 2023-03-21 日商富士軟片股份有限公司 半導體晶片的製造方法、套組及圖案的形成方法
JP7138793B2 (ja) 2019-06-25 2022-09-16 富士フイルム株式会社 感放射線性樹脂組成物の製造方法
EP4411477A1 (en) 2021-09-29 2024-08-07 FUJIFILM Corporation Active-light-sensitive or radiation-sensitive resin composition, and method for producing resist pattern

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008286924A (ja) * 2007-05-16 2008-11-27 Panasonic Corp 化学増幅型レジスト材料、トップコート膜形成用材料及びそれらを用いたパターン形成方法
JP2009020510A (ja) * 2007-06-15 2009-01-29 Fujifilm Corp パターン形成用表面処理剤、及び該処理剤を用いたパターン形成方法
EP2511766B1 (en) * 2011-04-14 2013-07-31 Rohm and Haas Electronic Materials LLC Topcoat compositions for photoresist and immersion photolithography process using them
JP2013061647A (ja) * 2011-09-09 2013-04-04 Rohm & Haas Electronic Materials Llc フォトリソグラフィ方法
JP6013218B2 (ja) * 2012-02-28 2016-10-25 信越化学工業株式会社 酸発生剤、化学増幅型レジスト材料、及びパターン形成方法
JP6012289B2 (ja) * 2012-06-28 2016-10-25 富士フイルム株式会社 パターン形成方法、感活性光線性又は感放射線性樹脂組成物、レジスト膜、及び電子デバイスの製造方法
JP5846061B2 (ja) * 2012-07-09 2016-01-20 信越化学工業株式会社 パターン形成方法
JP6060577B2 (ja) * 2012-09-13 2017-01-18 Jsr株式会社 ネガ型レジストパターン形成方法
JP6007199B2 (ja) * 2013-01-31 2016-10-12 富士フイルム株式会社 パターン形成方法、及び、これを用いた電子デバイスの製造方法
JP6002705B2 (ja) * 2013-03-01 2016-10-05 富士フイルム株式会社 パターン形成方法、感活性光線性又は感放射線性樹脂組成物、レジスト膜、及び、電子デバイスの製造方法
JP6267533B2 (ja) * 2014-02-14 2018-01-24 信越化学工業株式会社 パターン形成方法
TWI582536B (zh) * 2014-10-31 2017-05-11 羅門哈斯電子材料有限公司 圖案形成方法

Also Published As

Publication number Publication date
WO2016136354A1 (ja) 2016-09-01
JPWO2016136354A1 (ja) 2017-08-03
TWI701710B (zh) 2020-08-11
KR20170080644A (ko) 2017-07-10
TW201631632A (zh) 2016-09-01
KR101992655B1 (ko) 2019-06-25

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