JP6599229B2 - 低電圧マルチステージ増幅器 - Google Patents

低電圧マルチステージ増幅器 Download PDF

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Publication number
JP6599229B2
JP6599229B2 JP2015524487A JP2015524487A JP6599229B2 JP 6599229 B2 JP6599229 B2 JP 6599229B2 JP 2015524487 A JP2015524487 A JP 2015524487A JP 2015524487 A JP2015524487 A JP 2015524487A JP 6599229 B2 JP6599229 B2 JP 6599229B2
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JP
Japan
Prior art keywords
transistor
stage
voltage
coupled
output
Prior art date
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Expired - Fee Related
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JP2015524487A
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English (en)
Japanese (ja)
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JP2015523821A (ja
JP2015523821A5 (https=
Inventor
ダナセカラン、ビジャヤクマー
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Qualcomm Inc
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Qualcomm Inc
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Publication date
Application filed by Qualcomm Inc filed Critical Qualcomm Inc
Publication of JP2015523821A publication Critical patent/JP2015523821A/ja
Publication of JP2015523821A5 publication Critical patent/JP2015523821A5/ja
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Expired - Fee Related legal-status Critical Current
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Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45—Differential amplifiers
    • H03F3/45071—Differential amplifiers with semiconductor devices only
    • H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
    • H03F3/45179—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using MOSFET transistors as the active amplifying circuit
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
    • H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
    • H03F1/0261—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers with control of the polarisation voltage or current, e.g. gliding Class A
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F3/211—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/30—Single-ended push-pull [SEPP] amplifiers; Phase-splitters therefor
    • H03F3/3001—Single-ended push-pull [SEPP] amplifiers; Phase-splitters therefor with field-effect transistors
    • H03F3/3022—CMOS common source output SEPP amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/34—DC amplifiers in which all stages are DC-coupled
    • H03F3/343—DC amplifiers in which all stages are DC-coupled with semiconductor devices only
    • H03F3/345—DC amplifiers in which all stages are DC-coupled with semiconductor devices only with field-effect devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/08—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements
    • H03F1/22—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/08—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements
    • H03F1/22—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively
    • H03F1/223—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively with MOSFET's
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/405—Indexing scheme relating to amplifiers the output amplifying stage of an amplifier comprising more than three power stages
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/408—Indexing scheme relating to amplifiers the output amplifying stage of an amplifier comprising three power stages
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/453—Controlling being realised by adding a replica circuit or by using one among multiple identical circuits as a replica circuit
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/456—A scaled replica of a transistor being present in an amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/61—Indexing scheme relating to amplifiers the cascode amplifier has more than one common gate stage

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Amplifiers (AREA)
JP2015524487A 2012-07-26 2013-07-26 低電圧マルチステージ増幅器 Expired - Fee Related JP6599229B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201261676083P 2012-07-26 2012-07-26
US61/676,083 2012-07-26
US13/793,933 US9438189B2 (en) 2012-07-26 2013-03-11 Low voltage multi-stage amplifier
US13/793,933 2013-03-11
PCT/US2013/052405 WO2014018935A1 (en) 2012-07-26 2013-07-26 Low voltage multi-stage amplifier

Publications (3)

Publication Number Publication Date
JP2015523821A JP2015523821A (ja) 2015-08-13
JP2015523821A5 JP2015523821A5 (https=) 2016-12-15
JP6599229B2 true JP6599229B2 (ja) 2019-10-30

Family

ID=49994299

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2015524487A Expired - Fee Related JP6599229B2 (ja) 2012-07-26 2013-07-26 低電圧マルチステージ増幅器

Country Status (4)

Country Link
US (1) US9438189B2 (https=)
JP (1) JP6599229B2 (https=)
CN (1) CN104488192B (https=)
WO (1) WO2014018935A1 (https=)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9035699B2 (en) * 2012-12-19 2015-05-19 Qualcomm Incorporated Multi-stage amplifier
US9467098B2 (en) * 2014-06-25 2016-10-11 Qualcomm Incorporated Slew rate control boost circuits and methods
US9473120B1 (en) 2015-05-18 2016-10-18 Qualcomm Incorporated High-speed AC-coupled inverter-based buffer with replica biasing
JP6805568B2 (ja) * 2015-08-18 2020-12-23 株式会社リコー 駆動システム、画像投影装置および駆動制御方法
US10048490B2 (en) * 2015-08-18 2018-08-14 Ricoh Company, Ltd. Drive system, video device, image projection device, and drive control method
CN110166004B (zh) * 2019-04-18 2023-12-22 翱捷科技股份有限公司 一种功率放大器减小功耗的方法及装置
IL318245B2 (en) * 2025-01-08 2026-01-01 Applied Materials Israel Ltd High-voltage power supply and voltage modulator

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6559722B1 (en) 1999-08-10 2003-05-06 Anadigics, Inc. Low bias current/temperature compensation current mirror for linear power amplifier
US7012465B2 (en) * 2001-08-07 2006-03-14 Qualcomm Incorporated Low-voltage class-AB output stage amplifier
US6724252B2 (en) 2002-02-21 2004-04-20 Rf Micro Devices, Inc. Switched gain amplifier circuit
US7161422B2 (en) 2003-01-03 2007-01-09 Junghyun Kim Multiple power mode amplifier with bias modulation option and without bypass switches
JP4287193B2 (ja) 2003-05-15 2009-07-01 株式会社ルネサステクノロジ 高周波電力増幅用電子部品および無線通信システム
US7193459B1 (en) 2004-06-23 2007-03-20 Rf Micro Devices, Inc. Power amplifier control technique for enhanced efficiency
US7557658B2 (en) * 2004-07-07 2009-07-07 Texas Instruments Incorporated Low voltage amplifier having a class-AB control circuit
US8081777B2 (en) 2006-03-21 2011-12-20 Fairchild Semiconductor Corporation Volume-based adaptive biasing
EP2115869B1 (en) 2007-01-25 2014-02-12 Skyworks Solutions, Inc. Multimode amplifier for operation in linear and saturated modes
JP5075051B2 (ja) * 2008-08-05 2012-11-14 ルネサスエレクトロニクス株式会社 Ａｂ級増幅回路、及び表示装置
CN101425785B (zh) * 2008-12-09 2012-01-11 中国科学院微电子研究所 翻转网络跨导-电容补偿电路
US7777569B2 (en) * 2009-01-21 2010-08-17 Texas Instruments Incorporated Anti-pop method and apparatus for class AB amplifiers
JP2011019115A (ja) * 2009-07-09 2011-01-27 Renesas Electronics Corp 差動ａｂ級増幅回路、駆動回路および表示装置
CN101997494A (zh) * 2009-08-26 2011-03-30 盛群半导体股份有限公司 低频放大器及焦电型红外线侦测器
CN101944321B (zh) * 2010-09-26 2012-11-21 友达光电股份有限公司 栅极驱动脉冲补偿电路以及显示装置
CN102176662B (zh) * 2011-03-18 2013-12-11 北京工业大学 应用于低频可变增益放大器的直流偏移消除电路
CN102571227B (zh) * 2011-11-10 2014-04-16 嘉兴联星微电子有限公司 带直流失调消除功能的幅度检测电路
US9035699B2 (en) * 2012-12-19 2015-05-19 Qualcomm Incorporated Multi-stage amplifier

Also Published As

Publication number Publication date
CN104488192B (zh) 2018-02-16
JP2015523821A (ja) 2015-08-13
US9438189B2 (en) 2016-09-06
WO2014018935A1 (en) 2014-01-30
CN104488192A (zh) 2015-04-01
US20140028397A1 (en) 2014-01-30

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