JP6593480B2 - 電気光学装置、および電子機器 - Google Patents
電気光学装置、および電子機器 Download PDFInfo
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- JP6593480B2 JP6593480B2 JP2018042609A JP2018042609A JP6593480B2 JP 6593480 B2 JP6593480 B2 JP 6593480B2 JP 2018042609 A JP2018042609 A JP 2018042609A JP 2018042609 A JP2018042609 A JP 2018042609A JP 6593480 B2 JP6593480 B2 JP 6593480B2
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Description
特許文献1に開示の技術では、データ線に出力する階調電圧を保持する保持容量は駆動回路に設けられていた。従って、保持容量は電気光学装置における画素回路が配置される表示領域以外の部分に配置されていた。
図1は、本発明の実施形態に係る電気光学装置1の構成を示す斜視図である。電気光学装置1は、例えばヘッドマウントディスプレイにおいて画像を表示するマイクロディスプレイである。
(3n)列に対応した容量41の一方の電極は信号線18(3n)に接続されており、(3n)列に対応した容量41の他方の電極は給電線64に接続されている。同様に、(3n−1)列に対応した容量41の一方の電極は信号線18(3n−1)に接続されており、(3n−2)列に対応した容量41の一方の電極は信号線18(3n−2)に接続されている。(3n−1)列に対応した容量41の他方の電極、および(3n−2)列に対応した容量41の他方の電極は、給電線64に接続されている。給電線64には、固定電位である電位VSSが供給される。ここで、電位VSSは、論理信号である走査信号や制御信号のLレベルに相当するものであってもよい。
n番目のグループにおいて左端列である(3n−2)列に設けられたトランスミッションゲート34は、制御信号Sel(1)がHレベルであるとき(制御信号/Sel(1)がLレベルであるとき)にオン(導通)する。同様に、n番目のグループにおいて中央列である(3n−1)列に設けられたトランスミッションゲート34は、制御信号Sel(2)がHレベルであるとき(制御信号/Sel(2)がLレベルであるとき)にオンし、n番目のグループにおいて右端列である(3n)列に設けられたトランスミッションゲート34は、制御信号Sel(3)がHレベルであるとき(制御信号/Sel(3)がLレベルであるとき)にオンする。
以上本発明の一実施形態について説明したが、この実施形態に以下の変形を加えてもよい。
(1)上記実施形態では、データ線14(3n)が設けられる第2配線層L02を、給電線16(3n)および第1配線15(3n)が設けられる第1配線層L01とは別箇に設けた。しかし、図5に示すように、第2配線層L02および第2金属層M02を省略し、第1配線層L01に給電線16(3n)、データ線14(3n)および第1配線15(3n)を設けてもよい。
上述した実施形態に係る電気光学装置は、各種の電子機器に適用することができ、特に2K2K以上の高精細な画像の表示を要求され、かつ小型であることを要求される電子機器に好適である。以下、本発明に係る電子機器について説明する。
Claims (6)
- 画素回路と、前記画素回路に対応するデータ線とを備えた表示領域と、
階調電圧を出力するデータ信号供給回路と、
前記データ信号供給回路に接続された一端と、他端とを有する第1スイッチング素子と、
前記第1スイッチング素子の前記他端に接続された第1容量と、
前記第1スイッチング素子の前記他端及び前記第1容量に接続された一端と、前記データ線に接続された他端とを有する第2スイッチング素子と、を有し、
前記第1容量は前記表示領域に設けられる
ことを特徴とする電気光学装置。 - 前記表示領域には、第1配線と固定電位を与えられる固定電位線とが前記データ線に沿って設けられ、
前記第1容量は前記固定電位線と前記第1配線との間の容量である
ことを特徴とする請求項1に記載の電気光学装置。 - 発光素子が形成された発光素子層と、
前記画素回路が形成される回路層と、
前記回路層より前記発光素子層の側に設けられた第1金属層と、
前記第1金属層より前記発光素子層の側に設けられ、第1配線が形成された第1配線層と、を有し、
前記第1容量は前記第1金属層と前記第1配線との間の容量である
ことを特徴とする請求項1に記載の電気光学装置。 - 前記第1配線層には、固定電位を与えられる固定電位線が形成され、
前記第1容量は前記第1金属層と前記第1配線との間の容量および前記固定電位線と前記第1配線との間の容量である
ことを特徴とする請求項3に記載の電気光学装置。 - 第2配線層と固定電位を与えられる第2金属層とを、前記回路層と前記第1金属層との間に有し、
前記第2配線層には、前記データ線と、前記第2スイッチング素子を介して前記第1配線に接続される第2配線と、が並べて形成され、
前記データ線と前記第2配線とによって形成された第2容量を備える
ことを特徴とする請求項3に記載の電気光学装置。 - 請求項1〜請求項5の何れか1項に記載の電気光学装置を有する電子機器。
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