JP6582744B2 - Electronic component device manufacturing method and electronic component device - Google Patents

Description

  The present invention relates to an electronic component device manufacturing method and an electronic component device.

  Electronic components such as semiconductor elements are generally built in packages in order to protect them from the external environment, ensure various reliability, and facilitate mounting on a substrate. There are various types of packages. The element is fixed to a tab formed on a metal lead frame, and the electrode on the element surface and the inner lead are electrically connected with a gold wire, and the element, the gold wire and the lead frame are connected. A package in which a part is sealed with an epoxy resin composition by a low-pressure transfer molding method is widely used. Such a resin-encapsulated electronic component device has a larger package outer shape than the element size. For this reason, from the viewpoint of high-density mounting, the package form shifts from a pin insertion type to a surface mounting type, and miniaturization and thinning are actively promoted. However, there is a limit to increasing the mounting efficiency as long as a structure is employed in which an element is mounted on a metal lead frame and wire bonded is sealed with resin.

  On the other hand, in the fields of COB (Chip on Board), hybrid ICs, modules, cards, etc., a bare chip having bumps formed on the surface is mounted face down on the substrate via the bumps in order to mount some elements at high density. So-called flip chip mounting is used. Recently, various small packages called CSP (Chip Scale Package) have been developed to cope with high integration, high functionality, high pin count, systemization, high speed, low cost, etc. As a method for mounting an element, the use of flip chip mounting, which is excellent not only in mounting efficiency but also in electrical characteristics and multi-pin compatibility, is increasing. Further, many recent surface mount packages and CSPs have terminals arranged in an area array. This type of package mounting is the same as flip chip mounting.

  By the way, when performing flip chip mounting, the element and the substrate have different coefficients of thermal expansion, and thermal stress is generated at the joint due to heating, so ensuring connection reliability is an important issue. Further, since the circuit forming surface of the bare chip is not sufficiently protected, moisture and ionic impurities are likely to enter, and ensuring moisture resistance reliability is also an important issue. As countermeasures against these problems, it is usual to interpose a curable composition as an underfill material in the gap between the element and the substrate and cure it by heating or the like to reinforce the joint and protect the element. ing.

  As a method of interposing the curable composition in the gap between the element and the substrate, there are various methods such as a last-in type and a pre-coating type. In recent years, bumps have been reduced in diameter and pitch with increasing device integration, functionality, and pin count, making it difficult to handle electronic component manufacturing methods using last-in-case curable compositions. It is becoming. Thus, a method using a pre-applied curable composition that collectively bonds the element and the substrate and reinforces the bonded portion is attracting attention (see, for example, Patent Document 1).

JP 2002-313841 A

  In general, in a package mounting method using a pre-applied curable composition, a pressure process for filling a curable composition between an element and a substrate, a heating process for curing the curable composition, and a head In order to go through the cooling process, it is necessary to repeat heating and cooling of the head. Therefore, the production of electronic parts using a pre-applied curable composition is significantly less productive than the production of electronic parts using a last-in-case curable composition. It has become an important issue in the manufacture of electronic components using a coating-type curable composition. The present invention has been made in view of such a situation, and provides an electronic component device manufacturing method excellent in productivity and an electronic component device manufactured by the method.

Means for solving the above problems include the following embodiments.
<1> An application step of applying a curable composition containing an acrylate compound to at least one selected from the group consisting of a surface facing an electronic component and a surface facing the electronic component of the substrate;
The substrate and the electronic component are pressed in a state of being opposed to each other through a bump, the gap between the electronic component and the substrate is filled with the curable composition, and the electronic component and the electronic component A pressing step for contacting the substrate through the bump;
A temporary heating step in which a member having a temperature equal to or higher than the solder melting temperature is brought into contact with the electronic component for a period of 3 seconds or less;
And a main heating step of joining the electronic component and the substrate through the bumps with the member removed from the electronic component.
<2> The method for manufacturing an electronic component device according to <1>, wherein the pressing step is performed at a temperature lower than a solder melting temperature.
<3> The method for manufacturing an electronic component device according to <1> or <2>, wherein the main heating step is performed at a temperature equal to or higher than a solder melting temperature.
<4> The method for manufacturing an electronic component device according to any one of <1> to <3>, wherein the curable composition includes an inorganic filler.
<5> The volume average particle diameter of the inorganic filler is 0.1 μm to 5.0 μm, and the content of the inorganic filler in the curable composition is 30% by mass to 70% by mass, <4 The manufacturing method of the electronic component apparatus as described in>.
<6> The electronic component according to any one of <1> to <5>, wherein an average distance between the substrate and the electronic component is 40 μm or less, and an average distance between the bumps is 100 μm or less. Device manufacturing method.
<7> The method for manufacturing an electronic component device according to any one of <1> to <6>, wherein the pressing step is performed using a member different from the member used in the temporary heating step.
<8> The temperature of the substrate in the pressurizing step is 25 ° C. to 100 ° C., and the temperature of the electronic component is 25 ° C. to 100 ° C., according to any one of <1> to <7>. Manufacturing method of electronic component device.
<9> The temperature of the substrate in the temporary heating step is 25 ° C. to 100 ° C., and the temperature of the electronic component is 240 ° C. to 260 ° C., according to any one of <1> to <8>. Manufacturing method of electronic component device.
<10> The method for manufacturing an electronic component device according to any one of <1> to <8>, wherein the temperature of the electronic component in the main heating step is 230 ° C to 260 ° C.
<11> A substrate, a cured product of the curable composition, and an electronic component are arranged in this order, and the substrate and the electronic component are joined via bumps, and the cured product of the curable composition The electronic component device obtained by the method for manufacturing an electronic component device according to any one of <1> to <10>, in which a gap between the substrate and the electronic component is filled.

  ADVANTAGE OF THE INVENTION According to this invention, the electronic component apparatus manufactured by the manufacturing method of the electronic component apparatus which is excellent in productivity, and the said method can be provided.

It is the schematic which shows the manufacturing process of the manufacturing method of the electronic component apparatus of this invention. It is the schematic which shows the manufacturing process of the manufacturing method of the electronic component apparatus of this invention. It is the schematic which shows the manufacturing process of the manufacturing method of the electronic component apparatus of this invention. It is the schematic which shows the manufacturing process of the manufacturing method of the electronic component apparatus of this invention.

  Hereinafter, embodiments for carrying out the present invention will be described in detail. However, the present invention is not limited to the following embodiments. In the following embodiments, the components (including element steps and the like) are not essential unless otherwise specified. The same applies to numerical values and ranges thereof, and the present invention is not limited thereto.

In this specification, the term “process” includes a process that is independent of other processes and includes the process if the purpose of the process is achieved even if it cannot be clearly distinguished from the other processes. It is.
In the present specification, the numerical ranges indicated by using “to” include numerical values described before and after “to” as the minimum value and the maximum value, respectively.
In the present specification, the content of each component in the composition is the sum of the plurality of substances present in the composition unless there is a specific indication when there are a plurality of substances corresponding to each component in the composition. It means the content rate of.
In the present specification, the particle diameter of each component in the composition is a mixture of the plurality of types of particles present in the composition unless there is a specific indication when there are a plurality of types of particles corresponding to each component in the composition. Means the value of.
In this specification, the term “layer” refers to the case where the layer is formed only in a part of the region in addition to the case where the layer is formed over the entire region. Is also included.

<Method for manufacturing electronic component device>
The method for producing an electronic component device according to the present invention includes a curable composition containing an acrylate compound at least one selected from the group consisting of a surface of an electronic component facing the substrate and a surface of the substrate facing the electronic component. Between the electronic component and the substrate by applying pressure in a state where the substrate and the electronic component are opposed to each other via a bump. And pressurizing the electronic component and the substrate through the bump, and applying a member having a temperature equal to or higher than the solder melting temperature to the electronic component for 3 seconds. And a temporary heating step for contacting for the following time, and a main heating step for joining the electronic component and the substrate through the bumps with the member removed from the electronic component. In the present specification, “temperature above the solder melting temperature” means a temperature above the liquidus temperature of the solder.

According to the method for manufacturing an electronic component device of the present invention, the productivity of an electronic component device manufactured using a pre-coating curable composition can be dramatically improved. The reason for this can be considered as follows. In a conventional electronic component device mounting process using a pre-applied curable composition, a pressure process for filling the curable composition between the element and the substrate, a heating process for curing the curable composition, and a head In order to perform this cooling process, it is necessary to repeat heating and cooling of the head. However, in the method for manufacturing an electronic component device according to the present invention, the preliminary heating step is performed with a member heated in advance after the pressing step, and then the main heating step is performed with the member used in the temporary heating step removed. Therefore, the time required for heating and cooling the conventional head can be omitted, and the productivity is remarkably increased.
Furthermore, when the curable composition contains a radically polymerizable acrylate compound, it can be sufficiently cured in a short temporary heat treatment time compared to a curing reaction of an epoxy resin or the like.
Hereafter, the manufacturing method of the electronic component apparatus of this invention is demonstrated in detail.

(Granting process)
In the method for manufacturing an electronic component device of the present invention, a curable composition is applied to at least one selected from the group consisting of a surface of an electronic component facing the substrate and a surface of the substrate facing the electronic component. It has an application process. The specific method of the step is not particularly limited, and even if the curable composition is applied only to the substrate or the curable composition is applied only to the electronic component, the curable composition is applied to both. Also good. From the viewpoint of stable resin flow, a method of applying the curable composition only to the substrate is preferable. The curable composition used for the manufacturing method of the electronic component device of the present invention is not particularly limited as long as the above conditions can be satisfied. An example of a specific configuration will be described later.

  The type of substrate is not particularly limited. For example, organic substrates including fiber base materials such as FR4 and FR5, build-up type organic substrates not including fiber base materials, organic films such as polyimide and polyester, and alumina, glass, A wiring board in which a conductor wiring including an electrode for connection is formed on a base material including an inorganic material such as silicon can be given. A circuit, a substrate electrode, or the like may be formed on the substrate by a method such as a semi-additive method or a subtractive method.

  The type of electronic component is not particularly limited, and is called a die (chip) that is not packaged with resin, CSP (Chip Size Package) packaged with resin, BGA (Ball Grid Array), etc. An existing semiconductor package can be used.

  The material of the bump is not particularly limited, and can be selected from commonly used materials. The bump may be a combination of a metal post and solder. From the viewpoint of environmental problems and safety, materials that do not contain lead, such as Cu, Au, Ag—Cu solder, Sn—Cu solder, Sn—Bi solder, may be used. The bump may be formed on the electronic component side or on the substrate side.

  The method for applying the curable composition onto the substrate or the electronic component is not particularly limited. Examples thereof include a screen printing method, a method using a dispenser such as an air dispenser, a jet dispenser, and an auger type dispenser. From the viewpoint of stability of the amount of the curable composition to be applied, a method using a dispenser is preferable.

  The shape at the time of applying a curable composition to a board | substrate or an electronic component is not restrict | limited in particular. When applying the curable composition on the substrate, for example, a method of applying to the entire mounting position of the electronic component, a cross shape composed of two lines along a diagonal line of the rectangle corresponding to the mounting position of the electronic component And a method of giving the cross shape to the US shape obtained by further shifting the cross shape by 45 °, and a method of giving it at the center of the mounting position of the electronic component. In order to suppress creeping of the curable composition from the viewpoint of reliability, it is preferably applied in a cross shape or a rice character shape. When the substrate electrode is provided on the substrate, it is preferable to apply the curable composition to the mounting position of the electronic component including the portion where the substrate electrode is provided.

  The temperature at which the curable composition is applied onto the substrate or electronic component can be selected according to the properties of the curable composition. When the curable composition is applied using an air dispenser, the temperature of the curable composition and the substrate surface is preferably 25 ° C to 150 ° C, respectively, and from the viewpoint of ejection stability, 60 ° C to 100 ° C, respectively. More preferably, the temperature is set to ° C. When the curable composition is applied using a dispenser equipped with a heating device such as a jet dispenser or an auger type dispenser, it is preferable that the temperature of the curable composition and the substrate surface be 25 ° C to 150 ° C, respectively. From the viewpoint of ejection stability, the temperature is more preferably 60 ° C to 100 ° C.

  The needle diameter of the dispenser is not particularly limited, and is preferably selected in consideration of the degree of bubble entrainment and ejection stability during application. Specifically, for example, when discharging the curable composition in the production method of the present invention, it is preferable to use a needle having a diameter of 0.1 mm to 1.0 mm, and a diameter of 0.2 mm to 0.5 mm. It is more preferable to use this needle.

(Pressure process)
The manufacturing method of the electronic component device according to the present invention is such that the substrate and the electronic component are pressed in a state of being opposed to each other through the bump, and a curable composition is filled in a gap between the electronic component and the substrate, and And a pressing step for bringing the electronic component and the bump of the substrate into contact with each other.

  The temperature of the curable composition in the pressurizing step (hereinafter also referred to as filling temperature) is preferably not higher than the solder melting temperature. For example, the temperature can be 25 ° C to 150 ° C, preferably 50 ° C to 125 ° C, and more preferably 80 ° C to 100 ° C. When the filling temperature of the curable composition is 25 ° C. or higher, the fluidity of the curable composition tends to be sufficiently obtained. When the filling temperature exceeds 150 ° C., the composition is cured before filling with the curable composition, and the electronic component and the substrate may not contact with each other through the bumps. When the filling temperature of the curable composition is 150 ° C. or lower, an increase in viscosity accompanying the progress of the curing reaction of the curable composition is suppressed, and sufficient fluidity tends to be secured. The filling temperature of the curable composition during the pressurizing step may be constant or may be varied as long as good fluidity of the curable composition is obtained. For example, the method of adjusting the temperature of at least one of a board | substrate and an electronic component to filling temperature, and making it contact with a curable composition can be mentioned. The temperature of the curable composition in a pressurization process can be adjusted by adjusting the temperature of the member used for pressurization, for example.

  It is preferable that the temperature of the board | substrate and the temperature of an electronic component in a pressurization process are in the range of 25 to 100 degreeC and 25 to 100 degreeC, respectively, for example. The temperature of the substrate and the temperature of the electronic component in the pressing step can be adjusted by adjusting the temperature of the member used for pressing, for example.

  The magnitude of the pressure applied in the pressurizing process is the same as in the general flip chip mounting process, such as variations in the number or height of the bumps, the amount of deformation of the wiring on the substrate that receives the bumps or bumps due to the pressurization, etc. Can be set in consideration. Specifically, for example, it is preferable to set so that the load received per bump is about 1 g to 10 g. Further, for example, it is preferable that the load applied per chip is set to be 5N or more from the viewpoint of enabling contact between the electronic component and the substrate via the bump, and about 100N from the viewpoint of bump protection. The method of pressurization is not particularly limited. For example, the pressing member can be pressed against an electronic component disposed on the substrate.

(Temporary heating process)
The manufacturing method of the electronic component device of the present invention includes a temporary heating step of bringing a member having a temperature equal to or higher than the solder melting temperature into contact with the electronic component for a time of 3 seconds or less after the pressing step.

  It is preferable that a temporary heating process is performed at the temperature more than the curing temperature of a curable composition from a viewpoint of bump protection by a curable composition. That is, it is preferable that the curable composition is cured in the temporary heating step. Specifically, for example, it is preferably performed at a temperature of 200 ° C. or higher. From the viewpoint of the heat resistance of the curable composition, for example, the temporary heating step is preferably performed at a temperature of 320 ° C. or less, and more preferably at a temperature of 300 ° C. or less.

  In the temporary heating step, a member having a temperature equal to or higher than the solder melting temperature is brought into contact with the electronic component that has undergone the pressurizing step for a period of 3 seconds or less. The member used in the temporary heating step is heated in advance so as to be equal to or higher than the solder melting temperature when contacting the electronic component. In this respect, it is different from the conventional heat treatment step in which the temperature of the head in contact with the electronic component is raised after the pressurization step.

  In the method for manufacturing an electronic component device of the present invention, a metal bond is formed between a substrate and an electronic component (for example, between a bump of the electronic component and a wiring on the substrate) in a main heating process described later. Therefore, in the temporary heating step, a metal bond may or may not be formed between the substrate and the electronic component. From the viewpoint of smoothly forming the metal bond in the main heating step, it is preferable that the metal bond is formed at least partially in the temporary heating step. Therefore, it is more preferable that the temporary heating step is performed at a member temperature of 230 ° C. or higher.

  It is preferable that the temperature of the board | substrate and the temperature of an electronic component in a temporary heating process are in the range of 25 to 100 degreeC and 240 to 300 degreeC, respectively, for example. Moreover, it is more preferable that the temperature of the board | substrate and the temperature of an electronic component in a temporary heating process are in the range of 25 to 100 degreeC and 240 to 260 degreeC, respectively, for example.

  The temporary heating step is preferably performed in a short time from the viewpoint of improving productivity. Specifically, for example, it is preferably 2 seconds or less, more preferably 1 second or less, and even more preferably 0.6 seconds or less.

(Main heating process)
The manufacturing method of the electronic component device of the present invention includes a main heating step of joining the electronic component and the substrate via the bumps after removing the member used in the temporary heating step from the electronic component after the temporary heating step. In this specification, “joining” means that an electronic component and a substrate are electrically connected via bumps.

  This heating process is performed in the state which removed the member used at the temporary heating process from the electronic component. Therefore, the member used in the temporary heating process can be immediately used for heat treatment of another electronic component device, and productivity is improved.

  This heating step is performed under the condition that the electronic component and the substrate are joined to the extent required for the electronic component device. Moreover, when not hardening a curable composition by a temporary heating process, this heating process is performed on the conditions which a curable composition hardens | cures completely.

  This heating step is preferably performed at a temperature equal to or higher than the solder melting temperature from the viewpoint of forming a metal bond. For example, it is preferably performed at a temperature of 200 ° C. or higher. From the viewpoint of the heat resistance of the curable composition, this heating step is preferably performed at a temperature of 320 ° C. or less, and more preferably at a temperature of 300 ° C. or less. It is preferable that the temperature of the board | substrate and electronic component in this heating process is in the range of 200 degreeC-300 degreeC, respectively, for example. The temperature of the electronic component in this heating step is preferably in the range of 230 ° C to 260 ° C.

  The method for this heating step is not particularly limited. For example, it can be performed by heating the electronic component device that has undergone the temporary heating step in a reflow device. The time for this heating step is not particularly limited. For example, it can be performed in 10 seconds to 1000 seconds.

<Electronic component device>
The electronic component device of the present invention is manufactured by the electronic component device manufacturing method of the present invention. In the electronic component device of the present invention, a substrate, a cured product of a curable composition, and an electronic component are arranged in this order, and the substrate and the electronic component are joined via bumps, and the curable property is obtained. A cured product of the composition fills the gap between the substrate and the electronic component.

  Since the electronic component device of the present invention is manufactured by the method for manufacturing an electronic component device of the present invention, the productivity is high. Furthermore, the electronic component device of the present invention is less likely to be peeled off and is excellent in connectivity and reliability.

  The effect of the present invention is particularly remarkable in an electronic component device in which the distance between the substrate and the electronic component and the distance between the bumps are small. Specifically, for example, the average distance between the substrate and the electronic component in the electronic component device of the present invention is preferably 40 μm or less, more preferably 30 μm or less, and even more preferably 20 μm or less. . Moreover, the average distance between the bumps in the electronic component device of the present invention is, for example, preferably 100 μm or less, more preferably 80 μm or less, and further preferably 60 μm or less. In this specification, “average distance” means an arithmetic average value of measured values at three arbitrarily selected points.

  In this invention, the board | substrate may have the uneven | corrugated | grooved part by a wiring pattern and a resist pattern. When the substrate has a wiring pattern and a resist pattern, for example, the average width of the wiring pattern is 50 μm to 300 μm, the average width of the resist opening is 50 μm to 150 μm, and the average thickness of the resist is 10 μm to 20 μm. Is preferred. In this specification, “average width” and “average thickness” mean an arithmetic average value of measured values at three arbitrarily selected points.

<Curable composition>
The curable composition is preferably liquid at the application temperature from the viewpoint of satisfactorily applying to the substrate or the electronic component. Specifically, for example, the flow viscosity at the application temperature is preferably 50 Pa · s or less, more preferably 30 Pa · s or less, and further preferably 20 Pa · s or less. The rheometer AR2000 (manufactured by TA-Instruments) equipped with a parallel plate with a diameter of 25 mm was used for the flow viscosity, and an appropriate amount of a curable composition was dropped on a stage whose temperature was adjusted to 25 ± 0.1 ° C. The gap is adjusted to 0.5 mm and obtained as a viscosity at a shear rate of 200 s ⁻¹ . The lower limit of the flow viscosity at the application temperature of the curable composition is not particularly limited. For example, it is preferably 0.01 Pa · s or more, more preferably 0.05 Pa · s or more, and 1.0 Pa · s or more from the viewpoint of favorably imparting to a substrate or electronic component. Is more preferable.

(A) Acrylate compound The acrylate compound contained in the curable composition is not particularly limited, and can be appropriately selected from commonly used acrylate compounds. The acrylate compound may be a monofunctional acrylate compound or a bifunctional or higher acrylate compound. Examples of acrylate compounds include erythritol type polyacrylate compounds, glycidyl ether type acrylate compounds, bisphenol A type diacrylate compounds, cyclodecane type diacrylate compounds, methylol type acrylate compounds, dioxane type diacrylate compounds, bisphenol F type acrylate compounds, and dimethylol. Type acrylate compounds and isocyanuric acid type diacrylate compounds. Among these, it is preferable to use at least one selected from the group consisting of an isocyanuric acid type diacrylate compound, a bisphenol F type acrylate compound, a cyclodecane type diacrylate compound, and a glycidyl ether type acrylate compound. These acrylate compounds may be used alone or in combination of two or more.

(B) Polymerization initiator The curable composition preferably contains at least one polymerization initiator. The kind in particular of polymerization initiator is not restrict | limited, It can select suitably from the polymerization initiator used normally. From the viewpoint of polymerization in a short time, it is preferable to contain at least one peroxide. The peroxide is not particularly limited, and can be appropriately selected from those generally used as a polymerization initiator for acrylate compounds. Among these, from the viewpoint of curability, a cyclohexane type peroxide such as 1,1-bis (t-butylperoxy) cyclohexane is preferable.

  The equivalent ratio of the acrylate compound and the polymerization initiator is not particularly limited. From the viewpoint of reducing unreacted components of each component and improving moldability, for example, the polymerization initiator is preferably 0.01 equivalents or more and 0.1 equivalents or less with respect to the acrylate compound, and 0.02 equivalents. It is more preferable to set it as 0.8 equivalent or less, and it is still more preferable to set it as 0.04 equivalent or more and 0.07 equivalent or less.

(C) Inorganic filler It is preferable that a curable composition contains at least 1 sort (s) of an inorganic filler. Examples of the inorganic filler include silica particles such as fused silica and crystalline silica; alumina particles such as calcium carbonate, clay and alumina oxide; silicon nitride, silicon carbide, boron nitride, calcium silicate, potassium titanate, aluminum nitride, and beryllia. , Zirconia, zircon, fosterite, steatite, spinel, mullite, titania and the like; beads formed by spheroidizing these particles; and glass fibers. These inorganic fillers may be used alone or in combination of two or more. From the viewpoint of fluidity and penetration into the fine gaps of the curable composition, the inorganic filler preferably contains spherical silica.

  The volume average particle diameter of the inorganic filler is, for example, preferably in the range of 0.1 μm to 5.0 μm, and more preferably in the range of 0.3 μm to 2.0 μm. When the volume average particle size is 0.1 μm or more, an increase in the specific surface area of the inorganic filler is suppressed, an increase in the viscosity of the curable composition is suppressed, and the amount of the inorganic filler can be easily increased. When the volume average particle size is 5.0 μm or less, the filling property of the curable composition into a narrow gap can be improved, and the inorganic filler can be prevented from settling in the curable composition.

  When a curable composition contains an inorganic filler, it is preferable that the content rate of an inorganic filler is 30 mass%-70 mass% in the total amount of a curable composition, for example, 40 mass%-60 mass%. It is more preferable that When the content of the inorganic filler is 30% by mass or more, the effect of reducing the coefficient of thermal expansion tends to increase, and the temperature cycle property tends to improve, and the moisture resistance reliability tends to improve. When the content of the inorganic filler is 70% by mass or less, the viscosity of the curable composition can be kept low, and the fluidity and dispensing properties of the curable composition tend to be improved.

  The content of the inorganic filler is preferably 40% by volume to 70% by volume and more preferably 50% by volume to 60% by volume in the total amount of the curable composition. The volume-based content of the inorganic filler in the curable composition is measured as follows. First, the mass (Wc) of the curable composition at 25 ° C. is measured, and the curable composition is heat-treated in the air at 400 ° C. for 2 hours and then at 700 ° C. for 3 hours to decompose and remove the resin component. After that, the mass (Wf) of the remaining inorganic filler at 25 ° C. is measured. Next, the specific gravity (df) of the inorganic filler at 25 ° C. is obtained using an electronic hydrometer or a specific gravity bottle. Next, the specific gravity (dc) of the curable composition at 25 ° C. is measured by the same method. Next, the volume (Vc) of the curable composition and the volume (Vf) of the remaining inorganic filler are obtained, and the volume of the remaining inorganic filler is divided by the volume of the curable composition as shown in (Formula 1). Thus, the volume ratio (Vr) of the inorganic filler is obtained.

(Formula 1)
Vc = Wc / dc
Vf = Wf / df
Vr = Vf / Vc
Vc: Volume of curable composition (cm ³ ), Wc: Mass of curable composition (g)
dc: Density of curable composition (g / cm ³ )
Vf: Volume of inorganic filler (cm ³ ), Wf: Mass of inorganic filler (g)
df: density of the inorganic filler (g / cm ³ )
Vr: Volume ratio of inorganic filler

(D) Other component A curable composition may also contain another component as needed. Examples of other components include a flexibilizer, a coupling agent, a colorant, a solvent, a surfactant, and an ion trap agent.
When the curable composition contains a flexibilizer, the flexibilizer is not particularly limited, and can be appropriately selected from commonly used flexibilizers. The flexibilizer may be liquid or granular. From the viewpoint of filling property and fluidity of the curable composition, a granular flexibilizer is preferable. Specific examples of the granular flexibilizer include rubber particles such as silicone rubber, acrylic rubber, and butadiene rubber. Among these, from the viewpoint of adjusting the elastic modulus and improving fluidity, silicone rubber particles having relatively low elasticity are preferable.

  When using a granular flexible agent, it is preferable that the volume average particle diameter is the range of 0.1 micrometer-5.0 micrometers, for example. When the volume average particle diameter of the granular flexibilizer is 0.1 μm or more, an increase in the viscosity of the curable composition is suppressed and the amount of the granular flexibilizer tends to be easily increased. When the volume average particle diameter of the granular flexibilizer is 5.0 μm or less, the filling property of the curable composition into a narrow gap tends to be improved.

  When the curable composition includes a flexibilizer, the content is preferably set in a range of 1% by mass to 30% by mass with respect to the curable component. When the content of the flexibilizer is 1% by mass or more with respect to the curable component, fracture toughness is improved, sedimentation of the flexibilizer is suppressed, and the resistance to fillet cracking during temperature cycling is improved. It is in. When the content of the flexibilizer is 30% by mass or less with respect to the curable component, an increase in the viscosity of the curable composition is suppressed, and the fluidity, permeability, and dispensing property tend to be improved.

  When the curable composition contains a coupling agent, the coupling agent is not particularly limited, and can be appropriately selected from commonly used coupling agents. By including the coupling agent, the wettability between the inorganic filler and the curable component after curing is improved, and the adhesion to the substrate and the electronic component tends to be improved. Specifically, for example, γ- (2-aminoethyl) aminopropyltrimethoxysilane, γ- (2-aminoethyl) aminopropyldimethoxysilane, γ-glycidoxypropyltrimethoxysilane, γ-mercaptopropyltrimethoxy Examples thereof include silane compounds such as silane, γ-anilinopropyltrimethoxysilane, γ-ureidotrimethoxysilane, γ-dibutylaminopropyltrimethoxysilane, and imidazolesilane.

  When a curable composition contains a coupling agent, the content rate can be 0.1 mass%-5 mass% with respect to an inorganic filler.

  When the curable composition contains a colorant, the colorant is not particularly limited, and can be appropriately selected from commonly used colorants. Specific examples include carbon black, organic dyes, organic pigments, titanium oxide, red lead and bengara.

When the curable composition contains an ion trapping agent, the ion trapping agent is not particularly limited, and can be appropriately selected from commonly used ion trapping agents. By including the ion trapping agent, the migration resistance, moisture resistance and high temperature storage characteristics of electronic parts such as ICs tend to be improved. Among these, the ion trapping agent is preferably at least one selected from the group consisting of a compound represented by the following composition formula (1) and a compound represented by the composition formula (2).
Mg _1-X Al _X (OH) ₂ (CO ₃ ) _{X / 2} · mH ₂ O (1)
(0 <X ≦ 0.5, m is a positive number)
BiO _x (OH) _y (NO ₃ ) _z (2)
(0.9 ≦ x ≦ 1.1, 0.6 ≦ y ≦ 0.8, 0.2 ≦ z ≦ 0.4)

  When the curable composition contains an ion trapping agent, the content is preferably 0.1% by mass or more and 5.0% by mass or less in the total amount of the curable composition excluding the inorganic filler, for example. More preferably, the content is 1.0% by mass or more and 3.0% by mass or less. The volume average particle size of the ion trapping agent is preferably 0.1 μm or more and 3.0 μm or less, and the maximum particle size is preferably 10 μm or less.

  The method for preparing the curable composition is not particularly limited as long as each component can be uniformly dispersed and mixed. As a general method, dispersion kneading with a three-roll, a raking machine, a planetary mixer or the like can be mentioned. Moreover, you may reduce pressure during mixing as needed.

  Hereinafter, a method for manufacturing an electronic component device of the present invention will be described with reference to the drawings. In the following method for manufacturing an electronic component device, a mode in which a curable composition is applied to the surface of the substrate facing the electronic component and the electronic component and the substrate are joined will be described. The bump is provided on the electronic component side, and the electronic component and the substrate are joined via the bump. However, the present invention is not limited to these embodiments. 1A to 1D, 1 is a semiconductor chip (electronic component), 2 is a solder bump, 3 is a connection pad, 4 is a substrate, 5 is a curable composition, 6 is a pressing member, and 7 is a temporary heating member. , 8 is a reflow apparatus.

First, as shown in FIG. 1A, the curable composition 5 is applied to the surface of the substrate 4 on the side where the connection pads 3 are provided (the side of the substrate 4 facing the semiconductor chip 1) (application step).
Next, as shown in FIG. 1B, the semiconductor chip 1 and the substrate 4 are opposed to each other through the solder bumps 2. Then, pressure is applied from above the semiconductor chip 1 with the pressing member 6 to fill the gap between the semiconductor chip 1 and the wiring substrate 4 with the curable composition 5, and the connection pads between the semiconductor chip 1 and the substrate 4 3 is brought into contact with the solder bump 2 (pressure process).

  Next, as shown in FIG. 1C, the preliminarily heated temporary heating member 7 is pressed in a state where the semiconductor chip 1 and the connection pad 3 of the substrate 4 are in contact with each other via the solder bump 2, and the semiconductor chip 1 and the substrate 4 are pressed. The connection pads 3 are partially joined via the solder bumps 2 and the curable composition 5 is cured (temporary heating step).

  Next, as shown in FIG. 1D, the semiconductor chip 1 and the connection pads 3 of the substrate 4 are joined via the solder bumps 2 by passing through the reflow device 8. Through the above steps, the electronic component device of the present invention is manufactured.

  EXAMPLES The present invention will be specifically described below with reference to examples, but the present invention is not limited to these examples.

<Preparation of curable composition>
The amounts of the following components (parts by mass) shown in Table 1 were put in a vacuum separator and kneaded to obtain curable compositions of Example 1, Comparative Example 1 and Comparative Example 2, respectively.

(A) The following acrylate compounds were used as the acrylate compounds.
Acrylate 1: Shin-Nakamura Chemical Co., Ltd., trade name “A-DCP”
Acrylate 2: manufactured by Hitachi Chemical Co., Ltd., trade name “FA513 AS”
Acrylate 3: manufactured by Kyoeisha Chemical Co., Ltd., trade name “HOA-MPE”

(B) As the epoxy resin, the following epoxy resin was used. Epoxy 1: manufactured by Mitsubishi Chemical Corporation, trade name “jER-630C”
Epoxy 2: trade name [Z-LQ-031-A] manufactured by Sakai Kogyo Co., Ltd.

(C) The following curing agents were used as the curing agents.
Hardener 1: Product name “YH307” manufactured by Mitsubishi Chemical Corporation
Hardener 2: Product name “YH306” manufactured by Mitsubishi Chemical Corporation

  (D) As a polymerization initiator (peroxide), the brand name “Perkadox BC-FF” manufactured by Kayaku Akzo Corporation was used.

(E) As the inorganic filler, the following inorganic filler was used.
Inorganic filler 1: Product name "SE2050-SMJ" manufactured by Admatechs Co., Ltd.
Inorganic filler 2: Product name “SE2053-SEJ” manufactured by Admatechs Co., Ltd.

  (F) As a flexibilizer, the product name “D51N” manufactured by Alkuma / Island Trading Co., Ltd. was used.

<Production of electronic component device>
As a material of the electronic component device, a silicon chip having aluminum wiring of 7.3 mm × 7.3 mm × 0.1 mm (product name “WALTS-TEG CC80-0101JY-MODEL 1” manufactured by Walts Co., Ltd.), bump: Sn-Ag A substrate on which a circuit of 18 mm × 18 mm × 0.4 mm is formed using a Cu system, bump interval: 80 μm and a circuit of 18 mm × 18 mm × 0.4 mm (manufactured by Walts Co., Ltd., trade name “WALTS-KIT CC80-0102JY-MODEL 1”, solder) Resist: PSR4000-AUS703, base material: E679FGS) were prepared as substrates.

  The curable composition obtained above was applied in a cross shape to the electronic component mounting position on the surface of the substrate, the temperature of which was adjusted so that the filling temperature would be 70 ° C., using an air dispenser. Next, the surface of the silicon chip whose bump is adjusted so that the filling temperature is 80 ° C. is directed to the substrate side, and the bump is in contact with the substrate with a pressing member from above the silicon chip. did. At this time, the curable composition applied on the substrate was fluidized by pressurization to fill the gap between the substrate and the silicon chip. In this way, an electronic component mounting substrate was produced.

  In Example 1 and Example 2, the temporary heating step for 0.6 seconds was performed by bringing the temporary heating member heated in advance to 260 ° C. into contact with the silicon chip of the electronic component mounting substrate obtained above. Then, the main heating process for 60 seconds was performed at 260 degreeC with the reflow apparatus, and the electronic component apparatus was produced. In Comparative Example 2, an electronic component device was manufactured in the same manner as described above except that the time of the temporary heating step was set to 3.7 seconds.

  The preliminary heating process was performed, and the peeling and observation of the connectivity were confirmed as follows for the electronic component device before the main heating process and after the main heating process. The evaluation results are shown in Table 1.

<Observation of peeling>
For the observation of peeling, the provisional heating process is performed, and the electronic component apparatus is subjected to an ultrasonic observation apparatus (trade name, manufactured by Insight Co., Ltd.) before and after the main heating process. Insight 300) was used for observation, and evaluation was performed according to the following evaluation criteria.

-Evaluation criteria-
A: No peeling was observed after the preliminary heating, and no peeling was observed after the main heating.
B: Peeling was not observed after temporary heating, and peeling was observed after the main heating.
C: Peeling was observed after temporary heating.

<Check connectivity>
For the confirmation of connectivity, the electrical component device after the main heating step is checked for continuity with a tester (trade name: SK-6500, manufactured by Kaise Corporation) and SEM (Hitachi High-Technologies Corporation). The cross section of the electronic component device was observed with a product, trade name SU1510) and SIM (manufactured by JEOL Ltd., trade name JIB-4501) to confirm the presence or absence of metal bonding, and evaluated according to the following evaluation criteria.

-Evaluation criteria-
A: Conductivity is obtained after the main heating, and a metal bond is formed. Solder is not flashing.
B: Conductivity is obtained after the main heating, and a metal bond is formed. Solder is flashing.
C: Conductivity is obtained after the main heating, but metal bonding is not formed.
D: Conductivity cannot be obtained after this heating.

  As apparent from the results shown in Table 1, according to the manufacturing method of the present invention, an electronic component device can be manufactured using a pre-applied curable composition in a shorter time than the conventional method. In addition, the electronic component device obtained by the manufacturing method of the present invention is less likely to be peeled off and is excellent in connectivity and reliability.

1 Semiconductor chip (electronic component)
2 Solder bump 3 Connection pad 4 Substrate 5 Curable composition 6 Pressurizing member 7 Temporary heating member 8 Reflow device

Claims (9)

An applying step of applying a curable composition containing an acrylate compound to at least one selected from the group consisting of a surface of the electronic component facing the substrate and a surface of the substrate facing the electronic component;
The substrate and the electronic component are pressed in a state of being opposed to each other through a bump, the gap between the electronic component and the substrate is filled with the curable composition, and the electronic component and the electronic component A pressing step for contacting the substrate through the bump;
A temporary heating step in which the electronic component is brought into contact with a member heated in advance so as to be at a temperature equal to or higher than a solder melting temperature for a period of 3 seconds or less;
Have a, a main heating step of bonding via the bumps and the substrate and the electronic component when opening the said member from the electronic component,
The said pressurization process is a manufacturing method of the electronic component apparatus performed using a member different from the member used at the said temporary heating process .   The method for manufacturing an electronic component device according to claim 1, wherein the pressing step is performed at a temperature lower than a solder melting temperature.   The method for manufacturing an electronic component device according to claim 1, wherein the main heating step is performed at a temperature equal to or higher than a solder melting temperature.   The manufacturing method of the electronic component apparatus of any one of Claims 1-3 with which the said curable composition contains an inorganic filler.   The volume average particle diameter of the said inorganic filler is 0.1 micrometer-5.0 micrometers, and the content rate of the said inorganic filler in the said curable composition is 30 mass%-70 mass%. Manufacturing method of electronic component apparatus.   6. The electronic component device according to claim 1, wherein an average distance between the substrate and the electronic component is 40 μm or less, and an average distance between the bumps is 100 μm or less. Method. The temperature of the said board | substrate in the said pressurization process is 25 to 100 degreeC, The temperature of the said electronic component is 25 to 100 degreeC, The electronic component apparatus of any one of Claims 1-6. Manufacturing method. The temperature of the substrate in the temporary heating step is the 25 ° C. to 100 ° C., the a temperature of 240 ° C. to 260 ° C. of the electronic component, the electronic component device according to any one of claims 1 to 7 Manufacturing method. The temperature of the device is 230 ° C. to 260 ° C., a method of manufacturing an electronic component device according to any one of claims 1 to 7 in the main heating step.