JP6550768B2 - Method of manufacturing light emitting device - Google Patents

Description

  The present disclosure relates to a method of manufacturing a light emitting device, and more particularly to a method of manufacturing a light emitting device using a thin light emitting element.

  Conventionally, various light sources are used in electronic devices. For example, a thin light-emitting device is used as a light source for a backlight of a display panel used in an electronic device. As an example of such a thin light-emitting device, a light-emitting device in which a thin semiconductor light-emitting element is flip-chip mounted on a substrate provided with a conductive pattern is known (for example, Patent Document 1).

  As a method for manufacturing a thin semiconductor light emitting device, a step of forming a semiconductor laminate on a first main surface of a translucent substrate, a step of dividing the translucent substrate and the semiconductor laminate, 2 including a step of polishing the two principal surfaces is known (for example, Patent Documents 2 to 5). In the dividing step, a dividing groove is formed on the second main surface of the translucent substrate. The dividing grooves can be formed, for example, by laser scribing. In laser scribing, high energy laser light is emitted along the dividing line of the light transmitting substrate. The portion irradiated with the laser light is degraded. The light transmissive substrate and the semiconductor laminate can be divided along the altered portion.

  The altered portion remains on the translucent substrate even after the division. The altered region is a light absorbing region that absorbs light emitted from the light emitting element. Therefore, in order to suppress a decrease in light emission intensity of the light emitting element, the light transmissive substrate is thinned until the altered region is removed in the step of polishing the light transmissive substrate.

JP, 2008-521210, A Unexamined-Japanese-Patent No. 2012-104778 JP 2012-104779 A JP 2012-104780 A JP 2007-109822 A

  When the translucent substrate is thinned, the strength of the light emitting element is lowered. Therefore, when the light emitting element with low intensity is mounted on the base of the light emitting device, a defect may occur in the light emitting element. As a result, the yield of the light emitting device is reduced.

  An object of one embodiment of the present invention is to provide a method for manufacturing a light-emitting device that can manufacture a light-emitting device including a light-emitting element having a thin light-transmitting substrate with high yield.

A method of manufacturing a light emitting device according to an embodiment of the present invention includes a first main surface, a second main surface, a light transmitting portion, and a side surface having a light absorbing portion having a light transmittance lower than that of the light transmitting portion. A first step of preparing a light emitting device including a light transmitting substrate having the above-described structure, and a semiconductor laminate provided on the first main surface of the light transmitting substrate.
A second step of bonding the light emitting element to the upper surface of the base so that the side on which the semiconductor laminate is provided is opposed;
A third step of providing a support member that covers a side surface of the light emitting element and a part of the base;
And a fourth step of removing the light absorbing portion by thinning the light transmitting substrate from the second main surface side after the third step.

  According to the method for manufacturing a light-emitting device according to an embodiment of the present invention, a light-emitting device including a light-emitting element in which a light-transmitting substrate is thinned can be manufactured with a high yield.

1 is a schematic perspective view of a light emitting device according to Embodiment 1. FIG. It is a schematic top view of the light-emitting device of FIG. 1A. It is a schematic sectional drawing in the AA line of the light-emitting device of FIG. 1A. It is the elements on larger scale of the schematic sectional drawing of FIG. 1C. 5 is a schematic cross-sectional view for illustrating a manufacturing process of the light emitting device according to Embodiment 1. FIG. 5 is a schematic cross-sectional view for illustrating a manufacturing process of the light emitting device according to Embodiment 1. FIG. FIG. 7 is a schematic top view for explaining a manufacturing process of the light emitting device according to the first embodiment. It is a schematic sectional drawing in the BCE line of Drawing 2C. It is a schematic sectional drawing in the BCE line of Drawing 2C. 5 is a schematic perspective view for explaining a manufacturing process of the light emitting device according to Embodiment 1. FIG. It is a schematic sectional drawing in the FF line of FIG. 2F. 5 is a schematic perspective view for explaining a manufacturing process of the light emitting device according to Embodiment 1. FIG. 5 is a schematic cross-sectional view for illustrating a manufacturing process of the light emitting device according to Embodiment 1. FIG. 5 is a schematic cross-sectional view for illustrating a manufacturing process of the light emitting device according to Embodiment 1. FIG. 5 is a schematic cross-sectional view for illustrating a manufacturing process of the light emitting device according to Embodiment 1. FIG. 5 is a schematic cross-sectional view for illustrating a manufacturing process of the light emitting device according to Embodiment 1. FIG. 5 is a schematic cross-sectional view for illustrating a manufacturing process of the light emitting device according to Embodiment 1. FIG. 5 is a schematic cross-sectional view for illustrating a manufacturing process of the light emitting device according to Embodiment 1. FIG. 5 is a schematic cross-sectional view for illustrating a manufacturing process of the light emitting device according to Embodiment 1. FIG. 12 is a schematic top view for explaining a manufacturing process for a light-emitting device according to Modification 1. FIG. It is a schematic sectional drawing in the FF line of FIG. 6 is a schematic cross-sectional view of a light emitting device according to Modification 2. FIG. FIG. 10 is a schematic cross-sectional view showing a substrate according to Modification 3; 6 is a schematic perspective view of a light emitting device according to Example 2. FIG.

Hereinafter, embodiments of the present invention will be described with reference to the drawings as appropriate. However, the size, positional relationship, and the like of the members shown in each drawing may be exaggerated for clarity of explanation. The contents described in one embodiment and examples are also applicable to the other embodiments and examples.
In this specification, regarding the surface of the light emitting device, the light extraction surface is referred to as “upper surface”, the surface intersecting with the light extraction surface is referred to as “side surface”, and the surface opposite to the light extraction surface is referred to as “lower surface”. In addition, regarding the surfaces of the respective members constituting the light emitting device, the surfaces corresponding to the upper surface, the side surface, and the lower surface of the light emitting device are referred to as “upper surface”, “side surface”, and “lower surface” of each member. In addition, as needed, the surface of each member may be called "1st main surface", "2nd main surface", and "end surface."

First Embodiment
As shown in FIGS. 1A to 1D, the light emitting device 10 according to this embodiment includes a base 11, a light emitting element 12 mounted on the upper surface 11 u of the base 11, and a support member 13 surrounding the light emitting element 12. Is included. The light emitting device 10 may include the wavelength conversion member 14 on the upper surface 12 u of the light emitting element 12 (corresponding to the light emitting surface 12 e of the light emitting element 12).

  As shown in FIGS. 1C to 1D, the light emitting element 12 includes a translucent substrate 17 and a semiconductor stacked body 18 provided on the lower surface 17d side thereof. The semiconductor stacked body 18 includes a first conductive semiconductor layer (for example, an n-type semiconductor layer) 18a, an active layer 18b, and a second conductive semiconductor layer (for example, a p-type semiconductor layer) from the lower surface 17d side of the translucent substrate 17. ) 18c are stacked in this order (see FIG. 1D). A pair of electrodes (first electrode 19 and second electrode 20) is provided on the lower surface 18 d side of the semiconductor stacked body 18.

  The base 11 of the light emitting device 10 is a member on which the light emitting element 12 is mounted. In this embodiment, the base 11 includes a base material 11a that is a rectangular insulating plate in plan view, and a pair of connection terminals 15 and 16 provided on the surface of the base material 11a. The connection terminals 15 and 16 are provided so as to cover a part of the upper surface 110 of the base material 11a. As shown in FIG. 1C, the first connection terminal 15 is connected to the first electrode 19 of the light emitting element 12, and the second connection terminal 16 is connected to the second electrode 20 of the light emitting element 12. Therefore, end portions of the first connection terminal 15 and the second connection terminal 16 are formed at positions corresponding to the first electrode 19 and the second electrode 20 of the light emitting element 12. 1C and 1D, the connection terminals 15 and 16 may be provided so as to extend from the upper surface 110 of the base material 11a to the lower surface 112 through the side surface 111.

  As shown in FIGS. 1C and 1D, the electrodes 19 and 20 of the light emitting element 12 are joined to connection terminals 15 and 16 provided on the upper surface 11 u of the base 11 by a conductive joining member 21. Thus, the light emitting element 12 can be energized through the connection terminals 15 and 16.

  The support member 13 covers the side surface of the light emitting element 12 bonded to the base 11 by the bonding member 21 and a part of the base 11. By providing the support member 13, the light emitting element 12 can be more firmly held on the base 11. The support member 13 fixes the light emitting element 12 to the base 11 by covering a part of the light emitting element 12 and a part of the base 11 together. The support member 13 can include a first portion 13a that covers the side surface 12s of the light emitting element 12 and the peripheral portion of the light emitting element 12 in the upper surface 11u of the base 11 (see FIGS. 1C and 1D). When the first portion 13a of the support member 13 applies a lateral force (x-direction or y-direction) to the light-emitting element 12, the light-emitting element 12 is peeled off from the base 11 or the light-emitting element 12 is damaged. Can be suppressed. In addition, the support member 13 can include a second portion 13b that fills a gap between the lower surface 12d of the light emitting element 12 and the upper surface 11u of the base 11 (see FIGS. 1C and 1D). The second portion 13b of the support member 13 supports the light emitting element 12 from the lower surface 12d side. Therefore, when a downward force (−z direction) is applied from the upper surface 12 u side of the light emitting element 12, damage to the light emitting element 12 can be reduced.

  The wavelength conversion member 14 is, for example, a film or a plate of a translucent material containing a phosphor. As the phosphor, a phosphor capable of converting the wavelength of light emitted from the light emitting element 12 is used. The wavelength conversion member 14 covers at least the light emitting surface 12 e (upper surface 12 u) of the light emitting element 12. The wavelength conversion member 14 converts the wavelength of part of the light emitted from the light emitting surface 12 e of the light emitting element 12. The wavelength conversion member 14 may also cover the upper surface 13 u of the first portion 13 a of the support member 13.

Next, a method for manufacturing the light emitting device 10 will be described. The manufacturing method according to the present embodiment includes the following four steps.
1st process: The light emitting element 120 is prepared.
Second step: The light emitting element 120 is bonded to the upper surface 11 u of the substrate 11.
Third step: The support member 13 is provided.
Fourth step: The translucent substrate 170 of the light emitting element 120 is thinned.
Each step will be described in detail below.

[First Step: Preparing Light-Emitting Element 120]
In the first step, the light emitting element 120 is prepared. As the light emitting element 120 to be prepared, for example, the light emitting element 120 manufactured by the following method can be used.
First, a wafer 170W made of a translucent material is prepared (see FIG. 2A). The wafer 170 W is a growth substrate for growing the semiconductor stack 18 of the light emitting element 120. A semiconductor stacked body 180 is formed on the first main surface 171W of the wafer 170W (see FIG. 2B). In this embodiment, in order to form the semiconductor stacked body 180, the first conductive semiconductor layer 180a, the active layer 180b, and the second conductive semiconductor layer 180c are arranged in this order from the first main surface 171W side of the wafer 170W. Laminate. The semiconductor layers 180a, 180b, and 180c can be formed by epitaxial growth.

  The wafer 170 W and the semiconductor stack 180 are divided. A laser scribing method may be used for the division. An example of the laser scribing method will be described with reference to the drawings.

  FIG. 2C is a schematic diagram of second main surface 172W of wafer 170W during laser scribing. A “partition line Div” indicated by a broken line is a line to which the wafer 170W is to be divided. The “laser scribe line Ls” indicated by a solid line indicates a scribe line that has completed the irradiation of the laser light along the dividing line Div. By moving the irradiation position of the laser light L along the dividing line Div, a linear irradiation mark (scribe line) is formed. In the example of FIG. 2C, the irradiation position of the laser beam L is moved in the x direction (the direction of the arrow Lx) along the dividing line Div extending in the x direction.

  FIG. 2D is a cross-sectional view taken along the line B-C-D-E of FIG. 2C. The laser beam L is condensed on the second major surface 172W of the wafer 170W. In the vicinity of the surface of the second main surface 172W, the altered portion M is formed by the irradiation of the laser light L. As shown in FIG. 2C, the line B-C intersects with the laser scribe line Ls only at one place, so in the cross-sectional view between B-C in FIG. 2D, only one place of the second main surface 172W. , The altered portion M is formed. On the other hand, since the D-E line in FIG. 2C overlaps the laser scribe line Ls, in the cross-sectional view between D-E in FIG. 2D, a band-shaped degenerated portion M extending in the y direction is formed.

  The formation position of the altered portion M is not limited to the second main surface 172W of the wafer 170W. Since the altered portion M is formed at the focal position of the laser beam L, if the focal position of the laser beam L is positioned inside the wafer 170W, the altered portion M can be formed inside the wafer 170W. At this time, in order to prevent the semiconductor layers 180a, 180b, and 180c from being damaged, the altered portion M is provided at a position separated from the semiconductor layer by a predetermined distance. FIG. 2E is a cross-sectional view taken along line B-C-D-E in FIG. 2C, similar to FIG. 2D. However, in FIG. 2E, unlike FIG. 2D, the laser beam L is emitted focusing on the position of the depth dz from the second main surface 172 </ b> W of the wafer 170 </ b> W. Deterioration part M is formed inside wafer 170W (periphery of depth dz from second major surface 172W).

  In FIG. 2E, a pulse laser Lp is used as the laser light. When the pulse laser Lp is used, a spot-like altered portion M is formed. When the pulse laser Lp is used, first, the pulse laser Lp of one to several pulses is irradiated at a predetermined position on the dividing line Div and at a depth dz. By this irradiation, one spot-like altered portion M is formed around the focal position. Then, the focal position of the laser beam is moved by a distance Δd along the dividing line Div (see FIG. 2C) without changing the depth dz. The pulse laser Lp of one to several pulses is irradiated at the focal position after the movement. By repeating this procedure, a plurality of spot-shaped altered portions M can be formed at the depth dz. The center positions of two adjacent spot-like altered portions M are separated by a distance Δd (see the cross-sectional view between D and E in FIG. 2E).

  In FIG. 2E, only one spot-like altered portion M is formed at the depth dz in the cross-sectional view between B and C. As shown in FIG. 2C, the line B-C intersects the laser scribe line Ls at only one place. On the other hand, since the D-E line in FIG. 2C overlaps the laser scribe line Ls, a plurality of spot-shaped altered portions M aligned in the y direction are formed in the cross-sectional view between D-E in FIG. 2D. .

  After forming the laser scribing line Ls, the wafer 170W and the semiconductor stack 180 are divided along the laser scribing line Ls. As a result, individual light emitting elements 120 are obtained (see FIG. 2F). FIG. 2F shows the light emitting element 120 divided by using a laser scribing method (see FIG. 2E) for forming the spot-like altered portion M at the depth dz. The light emitting element 120 includes a translucent substrate 170 divided from the wafer 170 </ b> W and a semiconductor stacked body 18 divided from the semiconductor stacked body 180. The translucent substrate 170 includes a first main surface 171, a second main surface 172, and a side surface 173. The side surface 173 has two light transmitting parts Tr and an altered part M between them. The altered portion M is also a “light absorbing portion Abs” having a light transmittance lower than that of the light transmitting portion Tr. The altered portion M (light absorbing portion Abs) is formed only on the surface of the side surface 173, and is not formed inside the translucent substrate 170 (see FIG. 2G).

  As shown in FIGS. 2F and 2G, the semiconductor stack 18 is provided on the first major surface 171 of the translucent substrate 170. The semiconductor stacked body 18 includes a first conductive semiconductor layer 18a, an active layer 18b, and a second conductive semiconductor layer 18c stacked in this order from the first main surface 171 side.

  FIG. 2H shows the light emitting element 120 with the bottom surface facing upward. In FIG. 2H, the surface 18d facing upward of the semiconductor stack 18 corresponds to the lower surface 18d of the semiconductor stack 18 in FIG. 1D. Therefore, also in FIG. 2H, the surface 18d is referred to as a “lower surface 18d”. A part of the lower surface 18d of the semiconductor stacked body 18 is removed by etching or the like to form a recessed portion (referred to as a notch portion 18x). The depth (dimension in the z direction) of the notch 18x is at least larger than the total thickness (dimension in the z direction) of the active layer 18b and the second conductivity type semiconductor layer 18c. Smaller than (dimension in z direction). As a result, the first conductivity type semiconductor layer 18a is exposed from the bottom surface of the notch 18x.

  After forming the notch 18x, the pair of electrodes 19 and 20 are formed on the light emitting element 120 (see FIG. 2H). The first electrode 19 is formed on the lower surface 18 d of the semiconductor stack 18 to be electrically connected to the first conductive semiconductor layer 18 a. The second electrode 20 is formed on the exposed portion of the second conductive semiconductor layer 18c exposed in the notch 18x in order to electrically connect the second electrode 20 and the second conductive semiconductor layer 18c. .

  In FIG. 2H, the first electrode 19 is in direct contact with the first conductivity type semiconductor layer 18a and the second electrode 20 is in direct contact with the second conductivity type semiconductor layer 18c. For example, a conductive material may be disposed between the first electrode 19 and the first conductivity type semiconductor layer 18a. As another example, an insulating film is formed to cover the side surface of the notch 18x (the active layer 18b and the second conductivity type semiconductor layer 18c are exposed) to a part of the lower surface 18d of the semiconductor stacked body 18. The second electrode 20 may be provided on the insulating film. If the second electrode 20 and the exposed portion of the second conductivity type semiconductor layer 18c exposed in the notch portion 18x are connected by metal wiring or the like, the second electrode 20 and the second conductivity type semiconductor layer 18c are electrically connected. Can be connected.

  The maximum thickness (dimension in the z direction) of the light emitting element 120 including the light transmitting substrate 170, the semiconductor laminate 18, the electrodes 19 and 20 can be 800 μm to 150 μm, 500 μm to 150 μm, 400 μm to 150 μm, It is preferable that they are 300 micrometers-150 micrometers, 200 micrometers-150 micrometers.

[Second Step: Joining Light-Emitting Element 120 to Upper Surface 11u of Base 11]
In the second step, the substrate 11 is prepared, and the light emitting element 120 prepared in the step 1 is bonded to the substrate 11.

  As shown in FIG. 1A, the base body 11 of the present embodiment includes a base material 11a made of a plate-like body whose upper surface is rectangular, and connection terminals 15 and 16 provided on the surface of the base material 11a.

The base 11 of the present embodiment can be manufactured, for example, by the following method.
First, an insulating base material 11a is prepared. As shown in FIG. 3A, as the base material 11a, one obtained by molding an insulating material (for example, ceramic, resin, etc.) into a rectangular plate-like member is used. In the production of the resin base material 11a, the thermosetting resin may be molded by molding or the like, or the resin block may be machined and molded.

  Connection terminals 15 and 16 made of a metal film having a predetermined shape are provided on the surface of the base material 11a (see FIG. 3B). As shown in FIGS. 1B and 3B, the connection terminals 15 and 16 may include element connection portions 15a and 16a and external connection portions 15b and 16b. The element connection portions 15 a and 16 a are portions for connecting to the electrodes 19 and 20 of the light emitting elements 12 and 120. In plan view, when the light emitting elements 12 and 120 are mounted, the element connecting portions 15a and 16a are covered with the light emitting elements 12 and 120 (see FIG. 1B). The element connection parts 15a and 16a are connected to the external connection parts 15b and 16b.

  The element connection parts 15a and 16a are electrically connected to the external electrodes through the external connection parts 15b and 16b. In other words, the external connection parts 15 b and 16 b need to be able to connect to the external electrodes when the light emitting elements 12 and 120 are mounted. Accordingly, the external connection portions 15 b and 16 b are formed at positions that are not covered with the light emitting elements 12 and 120 or the support member 13 when the light emitting elements 12 and 120 are mounted. For example, in FIG. 1B, the external connection portion 15 b of the connection terminal 15 extends in the −x direction from the element connection portion 15 a to the outside of the light emitting element 12. The external connection portion 16 b of the connection terminal 16 extends in the x direction from the element connection portion 16 a to the outside of the light emitting element 12.

The external connection parts 15b and 16b do not need to have a constant width (dimension in the y direction). The external connection parts 15b and 16b shown in FIG. 1B are connected to the element connection parts 15a and 16a and are connected to a narrow part narrower than the element connection parts 15a and 16a and to a narrow part and the narrow part and element And wide portions wider than the connecting portions 15a and 16a.
As shown in FIGS. 1A and 1B, it is more preferable that the narrow portion be disposed such that the outer surface of the support member 13 crosses the narrow portion.

  As shown in FIGS. 1D and 3B, the external connection portions 15b and 16b may extend from the upper surface 11u of the base 11 to the lower surface 11d through the side surface 11s.

  When the base material 11a is formed from a ceramic material, it is preferable to mold a green sheet, print a metal film for forming the connection terminals 15 and 16 on the surface of the green sheet, and sinter. The joining force between the base material 11a of the ceramic material and the connection terminals 15 and 16 is improved. The base material 11a can be formed from a conductive member covered with an insulating material. For example, a rectangular metal plate may be prepared, and the surface thereof may be covered with an insulating film such as an alumina film to form the base material 11a.

  The light emitting element 120 is bonded to the base 11 manufactured by the method described above. A bonding member 21 is applied on the element connection portion 15a of the first connection terminal 15 and the element connection portion 16a of the second connection terminal 16 of the base 11 (see FIG. 3C). As the bonding member 21, a conductive paste or a reflowable material (solder, brazing material, etc.) is suitable.

  The light emitting element 120 prepared in the first step has the side where the semiconductor stacked body 18 is provided (that is, the lower surface 18d side of the semiconductor stacked body 18) facing down. Then, the lower surface 18 d side of the semiconductor stacked body 18 is opposed to the upper surface 11 u of the base body 11. The electrodes 19 and 20 provided on the lower surface 18d side of the semiconductor stacked body 18 are brought into contact with the bonding member 21 applied on the element connection portions 15a and 16a of the connection terminals 15 and 16 of the base 11.

  In the case of using a conductive paste as the bonding member 21, the second main surface 172 of the translucent substrate 170 of the light emitting element 120 is lightly pressed. The bonding member 21 spreads uniformly between the electrodes 19 and 20 of the light emitting element 120 and the connection terminals 15 and 16 of the base 11. On the other hand, when a reflowable material such as solder is used as the bonding member 21, the base 11 is placed in a reflow furnace while the light emitting element 120 is placed on the bonding member 21. The bonding member 21 melts and spreads uniformly between the electrodes 19 and 20 of the light emitting element 120 and the connection terminals 15 and 16 of the base 11. When removed from the reflow furnace, the bonding member 21 is cooled and hardened. In this manner, the light emitting element 120 is flip-chip mounted on the base 11 by the bonding member 21 (see FIG. 3D). When the light emitting element 120 is flip-chip mounted on the substrate 11, the thickness (dimension in the z direction) of the bonding member 21 is preferably about 2 to 50 μm.

[Third Step: Provide Support Member 13]
As shown in FIG. 3E, after the light emitting element 120 is bonded to the base 11, a support member 13 for covering the light emitting element 120 and the base 11 is provided. The support member 13 is preferably formed from an insulating material. Thereby, even if the support member 13 contacts the side surface of the semiconductor laminate 18 of the light emitting element 120, a short circuit can be avoided. Examples of the insulating material suitable for the support member 13 include resin, glass, or a combination thereof. In particular, resin materials are preferable because they are excellent in moldability and machinability.

  The support member 13 can be formed by a known method. When the support member 13 is formed of a resin material, molding methods such as screen printing, potting, transfer molding, compression molding and the like can be used. In particular, when a thermosetting resin material is used, transfer molding is preferable.

  The support member 13 may include a first portion 13a and a second portion 13b. The first portion 13 a covers a part of at least one side surface 173 of the translucent substrate 170 of the light emitting device 120. The support member 13 preferably covers at least a part of all the side surfaces 173 of the light emitting element 120, and particularly preferably covers all the side surfaces 173. The second portion 13 b of the support member 13 fills the gap between the light emitting element 120 and the base body 11. Although only the first portion 13a may be formed as the support member 13, it is preferable to form both. Thereby, the holding capability of the light emitting element 120 by the support member 13 can be improved. The first portion 13a and the second portion 13b may be formed from the same material. Thereby, the 1st part 13a and the 2nd part 13b can be formed simultaneously. On the other hand, the first portion 13a and the second portion 13b may be formed of different materials. Different functions can be imparted to the first portion 13a and the second portion 13b. For example, the first portion 13a may be formed of a material having high reflectance, and the second portion 13b may be formed of a material having high bonding strength.

  In FIG. 3E, the support member 13 covers a part of the upper surface 11 u of the base 11. The invention is not limited to this, and the support member 13 may cover substantially the entire top surface 11 u of the base 11. That is, in a plan view, the outer shape of the first portion 13a and the outer shape of the base 11 may be substantially the same. As shown in FIG. 3E, the support member 13 may cover the second main surface 172 of the translucent substrate 170.

[Fourth Step: Thinning Translucent Substrate 170 of Light-Emitting Element 12]
After covering the light emitting element 120 with the support member 13, the light transmitting substrate 170 of the light emitting element 12 is thinned from the side of the second main surface 172 facing the first main surface 171. In FIG. 3E, the second major surface 172 is covered by the support member 13. Therefore, after the support member 13 on the second main surface 172 is removed, the translucent substrate 170 is further thinned. In addition, the translucent board | substrate after making thin is shown with the code | symbol 17. In FIG. In addition, a light emitting element provided with a thinned light transmitting substrate 17 is denoted by reference numeral 12.

  The translucent substrate 170 is preferably thinned until the altered portion M (that is, the light absorbing portion Abs) on the side surface 173 is completely removed. For example, the translucent substrate 170 is thinned to the line XX in FIG. 3E. Since the light absorption by the light absorption part Abs is avoided by removing the light absorption part Abs, the light extraction efficiency of the light emitting element 12 is improved. Further, since the thickness of the entire light emitting element 12 is also reduced, the thickness of the light emitting device 10 can be reduced.

  The thickness of the translucent substrate 170 before processing is, for example, 110 to 500 μm. The translucent substrate 170 is preferably thinned to a thickness of about 1 μm to 100 μm. The light extraction efficiency of the translucent substrate 17 after processing can be improved. By not removing all the substrate, it is possible to secure the strength of the light emitting element to a required extent while enhancing the light extraction efficiency.

  As a processing method for thinning the translucent substrate 170, various principles / methods such as chemical or physical, wet or dry, pressure transfer method, or motion transfer method can be used. For example, chemical etching (wet etching, dry etching), polishing (lapping plate and free abrasive etc), grinding (grinding machine and fixed abrasive etc), cutting (surface planar etc), blasting, and combinations thereof are mentioned. Be Polishing, grinding, and cutting are preferable because the translucent substrate 170 and the support member 13 having different materials and hardness can be simultaneously processed to the same degree of thinness. Polishing and grinding can use either a dry method or a wet method. In particular, a wet method is preferable, which can suppress the generation of heat during polishing or grinding, and can wash away abrasive debris.

  According to the manufacturing method of the present embodiment, the light emitting element 120 including the thick light transmissive substrate 170 (the light emitting element 120 has a relatively high strength) is mounted on the base 11, and then the light transmissive substrate 170 is mounted. It is thinner. That is, a process of mounting the light emitting element 12 (the light emitting element 12 is relatively low in strength) provided with the thin translucent substrate 17 on the base body 11 is unnecessary. Therefore, the yield reduction of the light emitting device 10 due to the mounting of the light emitting element 12 having low strength can be suppressed.

  Furthermore, according to the manufacturing method of this embodiment, the light-emitting element 120 is held on the base 11 by the support member 13 as shown in FIG. As a result, when the light-emitting element 120 receives a force in the lateral direction (x direction in FIG. 3E) by a tool such as a cutting wheel during the processing of the light-transmitting substrate 170, the light-emitting element 120 may be damaged or removed from the substrate 11. Peeling can be suppressed. Further, the second portion 13 b of the support member 13 may be filled in the gap between the light emitting element 120 and the base 11. The second portion 13 b supports the light emitting element 120 when the light emitting element 120 receives a downward force (−z direction in FIG. 3E) by the tool. As a result, damage to the light emitting element 120 can be suppressed.

  When the support member 13 covers the side surface of the semiconductor stacked body 18 of the light emitting element 12, the semiconductor stacked body 18 can be prevented from being damaged during the processing of the translucent substrate 170. When the support member 13 covers the entire side surface 173 of the light-transmissive substrate 170 of the light emitting element 12, the light-transmissive substrate 170 is located on the outer peripheral edge (a portion susceptible to impact by the cutting tool) Hard to expose. As a result, it is possible to suppress chipping of the light transmitting substrate 170 during processing.

  When the entire side surface 173 of the translucent substrate 170 of the light emitting element 12 is covered with the first portion 13 a of the support member 13, when the translucent substrate 170 is processed to be thin, the first portion 13 a is also thinned Ru. In machining such as grinding, grinding and cutting, the machined surface after machining (the surface located on line X-X in FIG. 3F) is substantially flush. In other words, as shown in FIG. 1D, the upper surface 17u of the translucent substrate 17 and the upper surface 13u of the first portion 13a are substantially flush with each other. Here, “substantially flush” means that the two upper surfaces 17u and 13u are completely flush, or the height difference between them (the difference in relative position in the z direction) is within about ± 5 μm. Means to be. The upper surface 13u of the first portion 13a may be higher or lower than the upper surface 17u of the translucent substrate 17.

  The processed upper surface 17u of the translucent substrate 17 is processed smoothly so that, for example, the surface roughness Ra is about 1 μm or less, or the difference in height between the high and low portions of the upper surface is about 500 nm or less. Is preferred. Further, the upper surface 17 u of the translucent substrate 17 may be further surface-treated to be a mark of processing to be thinned. For example, the upper surface 17u of the translucent substrate 17 may be processed into a lattice shape or a plurality of linear irregularities, a plurality of polygonal irregularities, a lens shape, or the like. Thereby, the light extraction efficiency from the upper surface 17 u (corresponding to the light emitting surface 12 e of the light emitting element 12) of the translucent substrate 17 can be improved. The surface treatment can be performed by, for example, etching, blasting, laser processing or the like. In the etching, when the upper surface 17 u of the light transmitting substrate 17 is etched with an etching solution, polishing debris and the like remaining on the upper surface 17 u can be removed. In the surface treatment of the upper surface 17 u of the translucent substrate 17, the upper surface 13 u of the first portion 13 a of the support member 13 may also be treated at the same time. In order to selectively surface-treat only the upper surface 17 u of the translucent substrate 17, laser processing is preferable.

  As shown to FIG. 3G, you may further provide the process of providing the wavelength conversion member 14 and a translucent member in the upper surface 17u of the translucent board | substrate 17. As shown in FIG. Thereby, the light emitting element 12 exposed from the support member 13 can be protected. The wavelength conversion member 14 contains a phosphor that is excited by light from the light emitting element 12. The wavelength conversion member 14 may also be formed on the upper surface 13 u of the first portion 13 a of the support member 13.

  The wavelength conversion member 14 can be formed of a translucent resin containing a phosphor. As a method for forming the wavelength conversion member 14, a sheet made of a translucent resin containing a phosphor is adhered to the upper surface 17u of the translucent substrate 17 by hot melt or adhesive, or translucent by electrophoretic deposition. Method of impregnating the deposited phosphor with a translucent resin after depositing the phosphor on the upper surface 17 u of the substrate 17, potting, transfer molding, compression molding, casting case of the translucent resin containing the phosphor Examples of the method include coating by a known technique such as molding, spraying, electrostatic coating, and printing. Among these methods, the spray method is preferable, and the pulse spray method in which spray is intermittently ejected is particularly preferable.

  FIG. 3G shows a process of forming the wavelength conversion member 14 by the pulse spray method. A protective member P is provided to cover the upper surface 11 u of the base 11 and the outer surface of the support member 13. The upper end of the protective member P is preferably higher than the upper surface 13 u of the first portion 13 a of the support member 13. Next, the translucent resin R containing a phosphor is intermittently sprayed from the spray nozzle Sn onto the upper surface 17 u of the translucent substrate 17 and the upper surface 13 u of the first portion 13 a of the support member 13. When the area of the upper surfaces 17u and 13u is wider than the spray range of the spray nozzle Sn, the spray nozzle Sn is sprayed while moving in the horizontal direction (x direction). When the translucent resin R is sprayed almost uniformly on the entire upper surfaces 17u and 13u, the protective member P is removed. Since the upper surface 11u of the base 11 that is not covered by the support member 13 (that is, exposed from the support member 13) and the outer surface of the support member 13 are protected by the protection member P, the wavelength conversion member 14 is protected. Is not formed. In this way, the light emitting device 10 shown in FIG. 1C is obtained.

  Moreover, the wavelength conversion member 14 can be formed from the glass containing fluorescent substance. The wavelength conversion member 14 made of a glass plate containing a phosphor can be adhered to the upper surface 17 u of the translucent substrate 17 with an adhesive.

  The thickness of the wavelength conversion member 14 can be, for example, about 1 to 300 μm, preferably about 1 to 100 μm, more preferably about 5 to 100 μm, about 20 to 60 μm, and more preferably about 30 to 40 μm.

(Modification 1)
In the method of manufacturing a light emitting device described above, in the second step, a substrate (composite substrate) capable of simultaneously manufacturing a plurality of light emitting devices 10 is prepared. In the composite substrate 24 shown in FIGS. 4A and 4B, a plurality of substrates 11 (FIGS. 1C and 3B) used for each light emitting device 10 are connected in series. For example, the composite substrate 24 in FIG. 4A includes a total of 18 substrates 11 in three columns (x _{i to} x _iii ) in the x direction and six rows (y _{i to} y _vi ) in the y direction.

  The base material 24 a of the composite base 24 has a slit 25 extending from the upper surface 24 u to the lower surface 24 d and extending in the y direction. A composite connection terminal 22 is provided on the base material 24a. The composite connection terminal 22 extends from the upper surface 24 u of the base material 24 a to the lower surface 24 d through the inner surface of the slit 25.

  The light emitting element 120 (FIG. 3D) is bonded to the composite substrate 24 thus manufactured. Specifically, 18 light emitting elements 120 are joined by the joining member 21 on the composite connection terminal 22 including 18 pairs of connection terminals.

  In the third step, the plurality of support members 13 are formed on the upper surface 24 u of the composite substrate 24. Each support member 13 covers all six light emitting elements 120 so as to fill between the adjacent light emitting elements 120 in the y direction (see FIG. 4A). That is, in the composite substrate 24 shown in FIG. 4A, three support members 13 extending in the y direction are formed. In the fourth step, the translucent substrates 170 of the eighteen light emitting elements 120 are collectively thinned by grinding (see FIGS. 3E to 3F). Thereafter, the wavelength conversion member 14 is formed on the upper surface 17u of the light transmissive substrate 17 of the 18 light emitting elements 12 (see FIG. 3G).

  The composite substrate 24 is then divided into individual light emitting devices 10 (FIG. 1A). In the composite substrate 24, six light emitting devices are arranged in the y direction and three light emitting devices are arranged in the x direction. The support member 13 and the composite substrate 24 are divided by a dicer, a laser or the like along the broken line L in FIG. 4A. As a result, the light emitting devices aligned along the y direction are divided into six. Moreover, since both sides of the slit 25 are cut by this division, the three light emitting devices 10 arranged in the x direction are also separated at the position of the slit. Finally, 18 light emitting devices are obtained.

  In the first modification, a plurality of light emitting devices can be simultaneously manufactured with a relatively small number of steps by the composite substrate 24. In the first modification, the composite base 24 capable of simultaneously forming the eighteen light emitting elements 120 is illustrated. However, the present invention is not limited to this, and a composite substrate 24 capable of simultaneously forming a larger number (several hundreds to several thousands) of light emitting elements 120 may be used. As in the present embodiment, a plurality of light emitting elements 120 are covered with one support member 13, and a plurality of light emitting elements 120 are emitted as compared with the case where a plurality of support members 13 that individually cover the plurality of light emitting elements 120 are formed. The elements 120 can be arranged densely. Therefore, in the above-mentioned fourth step (step of thinning the light transmitting substrate 170), the processing efficiency (for example, grinding, grinding and cutting) is increased in the process of thinning the support member 13 simultaneously with the light transmitting substrate 170. improves. As a result, the manufacturing efficiency of the light emitting device 10 can be increased. Further, when the support member 13 is thinned by grinding or the like, the corner may be damaged when the cutting tool comes into contact with the upper (cutting surface side) corner of the support member 13. By covering the plurality of light emitting elements 120 with one support member 13, it is possible to reduce the corners (that is, the portions that are easily damaged) of the support member 13. Thereby, it is possible to suppress the occurrence of chipping at the corners of the support member 13 during the process of thinning the support member 13 and perform stable processing.

(Modification 2)
As a modification of the present embodiment, as shown in FIG. 5, a light emitting device 40 including a plurality of light emitting elements 12 is manufactured. In the second step, a composite base 44 provided with connection terminals 45, 45a, 46 for connecting the plurality of light emitting elements 12 to the base material 43 is formed. 5 includes a base material 43 having a size on which a plurality of light emitting elements 12 (five in FIG. 5) can be placed. The connection terminals 45, 45a, and 46 are patterned so that the plurality of light emitting elements 12 are connected in series. The connection terminals 45, 45a, and 46 may be patterned so as to connect the plurality of light emitting elements 12 in parallel.

  The light emitting device 120 (FIG. 3D) is bonded to the composite substrate 44 fabricated in this manner. On the connection terminals 45, 45 a, 46, the five light emitting elements 120 are joined by the joining member 21.

  In the third step, the support member 13 is formed on the upper surface 44 u of the composite substrate 44. The support member 13 covers all five light emitting elements 120 aligned in the x direction (see FIG. 5). In the fourth step, the translucent substrates 170 of the five light emitting elements 120 are simultaneously thinned (see FIGS. 3E to 3F). After that, the wavelength conversion member 14 is formed on the upper surface 17u of the translucent substrate 17 of the five light emitting elements 12 (see FIG. 3G). Finally, the light emitting device 40 shown in FIG. 5 is obtained.

  The plurality of light emitting elements 12 may be all the same type of light emitting elements 12 or may be mutually different light emitting elements 12. For example, one light emitting device 40 may include a plurality of light emitting elements having different light emission wavelengths.

(Modification 3)
As a modification of the present embodiment, as shown in FIG. 6, a base body 11 ′ having a through hole 11c is formed. The present modification is the same as the first embodiment except that the form of the base 11 'is different.

  The base material 11b of the base 11 'can be formed, for example, by first forming an insulating material into a rectangular plate-like member (see FIG. 3A) and further penetrating two through holes 11c and 11d (see FIG. 6) . In the formation of the connection terminals 15 and 16, first, the through holes 11c and 11d are filled with a conductive material. Next, a metal film is formed on the upper surface 110b and the lower surface 112b of the base material 11b so as to cover the through holes 11c and 11d and come into contact with the conductive material therein. The connection terminals 15 and 16 are formed of the conductive material in the through holes 11 c and 11 d and the metal film.

  Hereinafter, materials suitable for each member will be described in detail.

(Light emitting element 12)
For example, a semiconductor light emitting element such as a light emitting diode can be used as the light emitting element 12.

(Translucent substrate 17)
As a material suitable for the translucent substrate 17 of the light emitting element 12, for example, an insulating material such as sapphire (Al ₂ O ₃ ), spinel (MgAl ₂ O ₄ ), a nitride-based semiconductor material, etc. may be mentioned. . The thickness of the wafer 170W is usually about 100 to 500 μm, and preferably about 150 to 300 μm.
The translucent substrate 17 may have a plurality of convex portions or irregularities on the first main surface 17d (see FIG. 1D). The translucent substrate 17 may have an off angle of about 0 to 10 degrees with respect to a predetermined crystal plane such as the C plane or the A plane.

(Semiconductor laminate 18)
Examples of materials suitable for the first conductive semiconductor layer 18a, the active layer 18b, and the second conductive semiconductor layer 18c include semiconductor materials such as III-V compound semiconductors and II-VI compound semiconductors. _{Specifically, In X Al Y Ga 1-} X-Y N (0 ≦ X, 0 ≦ Y, X + Y ≦ 1) nitride-based semiconductor material such as, for example InN, AlN, GaN, InGaN, AlGaN, InGaAlN Etc. can be used.

  The shape of the light emitting element 12 in a plan view is not particularly limited, but for example, a quadrangle is preferable. The size of the light emitting element 12 is, for example, about 100 μm to 2000 μm per side when the shape in plan view is a square. When the shape in plan view is rectangular, the ratio of the long side to the short side is preferably about 2: 1 to 50: 1.

  In the light emitting element 12, a semiconductor layer (for example, an intermediate layer, a buffer layer, a base layer) or an insulating layer different from the semiconductor stacked body 18 may be provided between the translucent substrate 17 and the semiconductor stacked body 18.

(Substrate 11)
The base 11 includes a base material 11 a and connection terminals 15 and 16.

(Base material 11a)
Examples of the base material 11a include ceramic, resin, pulp, glass, and composite materials thereof (for example, composite resins), or composite materials of these materials and conductive materials (for example, metals, carbon, and the like).

  Suitable ceramics for the base material 11a include those containing aluminum oxide, aluminum nitride, zirconium oxide, zirconium nitride, titanium oxide, titanium nitride or mixtures thereof. Glass epoxy resin etc. are mentioned as composite resin.

  Examples of the resin suitable for the base material 11a include epoxy resin, bismaleimide triazine (BT) resin, polyimide resin, cyanate resin, polyvinyl acetal resin, phenoxy resin, acrylic resin, alkyd resin, and urethane resin. BT resins containing naphthalene-based epoxy resins and compositions containing them, liquid crystal polymers and compositions containing them may be used. In particular, a composition containing a BT resin is preferred.

  As the base material 11a, a glass epoxy, glass silicone, or glass-modified silicone prepreg substrate can be used.

  About 500 micrometers or less are preferable, as for the thickness of the base material 11a, about 470 micrometers or less, about 300 micrometers or less are more preferable, and about 200 micrometers or less are more preferable. In consideration of strength and the like, it is preferably about 20 μm or more, more preferably about 40 μm or more.

  The planar shape of the base material may, for example, be a circle, a polygon such as a square, or a shape close to these. Among them, rectangular is preferable.

In the case of the rectangular base material 11 a, the length (dimension in the x direction) and the width (dimension in the y direction) are determined by the size and number of the light emitting elements 12 bonded to the base body 11. For example, when one light emitting element 12 having a rectangular top view is bonded to the base 11, the length of the base material 11a is preferably about 1.5 to 5 times as long as the long side of the light emitting element 12; The width of the light emitting element 12 is preferably about 1.0 to 2.0 times the short side of the light emitting element 12. For example, when a plurality of light emitting elements 12 are bonded to the base 11, the length and width of the base 11 are appropriately adjusted according to the number and arrangement of the light emitting elements 12. When bonding a plurality of light emitting elements 12 along the longitudinal direction (x direction), the width of the base material 11a is not changed, and the length can be increased. Specifically, when two light emitting elements 12 are joined, the length of the base material 11 a is preferably about 2.4 to 6.0 times as long as one side of the light emitting elements 12. When three light emitting elements 12 are joined along the longitudinal direction, the length of the base material 11 a is preferably about 3.6 to 6.0 times as long as one side of the light emitting element 12.
The base material 11a can include protective elements such as a capacitor, a varistor, a zener diode, and a bridge diode. For example, a multilayer structure or a laminated structure may be provided in a part of the base material 11a to function as these protective elements.
The base 11 is not limited to one including the base material 11 a and the connection terminals 15 and 16, and may be formed only of, for example, a metal film or a metal plate to be the connection terminals 15 and 16. The molding resin and the metal lead may be integrally molded.
The base 11 includes a wiring provided on the upper surface 11 u side and a base material 11 a provided on the lower surface 11 d side to support the wiring, and has a step of removing the base material 11 a after the fourth step. It may be. Since the light emitting device does not include the base material 11a, the light emitting device can be thinned or miniaturized.

(Connection terminals 15, 16)
The pair of connection terminals 15 and 16 are provided at least on the upper surface 11u of the base 11 (that is, the surface on which the light emitting element 12 is mounted). Further, the base 11 may extend to the lower surface 11d through the side surface 11s (see FIG. 1C). As the connection terminals 15 and 16, a metal film wiring or a lead frame can be used. The metal film wiring can be formed by plating, printing, or the like. The thickness of the connection terminals 15 and 16 is preferably several μm to several tens of μm.

  The connection terminals 15 and 16 are formed, for example, by laminating one or more layers of Au, Pt, Pd, Rh, Ni, W, Mo, Cr, Ti, Fe, Cu, Al, Ag, or an alloy thereof. can do. For example, a layer of Ag, Pt, Sn, Au, Cu, Rh, or an alloy thereof may be formed on the surfaces of the connection terminals 15 and 16. Specifically, the connection terminals 15 and 16 are W / Ni / Au, W / Ni / Pd / Au, W / NiCo / Pd / Au, Cu / Ni / Cu / Ni / Pd / Au, Cu / Ni / A layered structure of Pd / Au, Cu / Ni / Au, Cu / Ni / Ag, Cu / Ni / Au / Ag or the like can be employed.

(Supporting member 13)
Suitable materials for the support member 13 include resin, ceramic, pulp, and glass, and resin is particularly preferable. Examples of the resin suitable for the support member 13 include a thermosetting resin, a thermoplastic resin, a modified resin thereof, a hybrid resin containing one or more of these resins, and the like. Specifically, an epoxy resin composition, a modified epoxy resin composition (silicone-modified epoxy resin etc.), a silicone resin composition, a modified silicone resin composition (epoxy-modified silicone resin etc.), a hybrid silicone resin, a polyimide resin composition, Modified polyimide resin composition, polyamide resin, polyethylene terephthalate resin, polybutylene terephthalate resin, polycyclohexane terephthalate resin, polyphthalamide (PPA), polycarbonate resin, polyphenylene sulfide (PPS), unsaturated polyester, liquid crystal polymer (LCP), ABS Examples thereof include resins such as resins, phenol resins, acrylic resins, PBT resins, urea resins, BT resins, and polyurethane resins. In the fourth step of the first embodiment, when the light-transmitting substrate 170 and the support member 13 of the light emitting element 12 are thinly processed by grinding, the support member 13 is softened by heat generated by the grinding. Difficult thermosetting resins are preferred. Thereby, the support member 13 can be easily removed.

  The support member 13 may be translucent, but is preferably a reflective material having a reflectance of 60% or more with respect to light from the light emitting element 12, and more preferably a reflective material having 70%, 80%, or 90% or more. preferable. Thereby, the light transmitted through the support member 13 can be reduced, and the light extraction efficiency from the light emitting surface 12 e of the light emitting element 12 can be enhanced. When the reflectance of the support member 13 is higher than that of the base 11 (for example, aluminum nitride is used for the base 11 and a silicone resin containing 95% by weight of titanium dioxide is used as the support member 13), the light extraction efficiency of the light emitting device is particularly increased. It can be enhanced. Examples of the reflective material include titanium dioxide, silicon dioxide, zirconium dioxide, potassium titanate, alumina, aluminum nitride, boron nitride, mullite, niobium oxide, barium sulfate, and various rare earth oxides. Light reflecting materials such as yttrium oxide (eg, yttrium oxide, gadolinium oxide).

  The support member 13 may contain a fiber filler such as glass fiber and wollastonite, an inorganic filler such as carbon, and a material having high heat dissipation (for example, aluminum nitride) as an additive. Thereby, the intensity | strength of the support member 13, hardness, and heat dissipation can be improved. These additives are preferably contained, for example, in an amount of about 10 to 95% by weight with respect to the total weight of the support member 13.

  The outer shape of the support member 13 may be, for example, a polygonal prism such as a cylinder or a square prism, a truncated cone, or a truncated pyramid, and a part may be a convex lens shape or a concave lens shape. . In particular, it is preferable that the base 11 has an elongated shape in the longitudinal direction (x direction) (see FIG. 1A). It is preferable to have a surface along the short direction (y direction) of the substrate 11.

  In plan view, it is preferable that at least one of the side surfaces along the longitudinal direction (x direction) of the support member 13, preferably both, form the same surface as the side surface along the longitudinal direction (x direction) of the substrate 11. The side surface itself along the x direction of the support member 13 becomes the outer surface of the light emitting device 10, and the light emitting device 10 can be reduced in size.

  In plan view, the support member 13 is preferably larger than the light emitting element 12. In particular, the length in the longitudinal direction of the outermost shape of the support member 13 is preferably about 1.1 to 4.0 times one side of the light emitting element. Specifically, about 100 to 1000 μm is preferable, and about 200 to 800 μm is more preferable. The thickness of the support member 13 (the width of the support member 13 from the side surface of the light emitting element 12 when viewed in plan) is, for example, about 1 to 100 μm, and preferably about 5 to 80 μm and about 10 to 50 μm.

(First electrode 19 and second electrode 20)
The first electrode 19 and the second electrode 20 can be formed, for example, by laminating one or more films of Au, Pt, Pd, Rh, Ni, W, Mo, Cr, Ti, or an alloy thereof. The first electrode 19 and the second electrode 20. Specifically, lamination is performed from the semiconductor laminate 18 side such as Ti / Rh / Au, W / Pt / Au, Rh / Pt / Au, W / Pt / Au, Ni / Pt / Au, Ti / Rh, and the like. And a laminated film.

  In the first electrode 19 and the second electrode 20, a material layer having a high reflectance with respect to light emitted from the active layer 18b is disposed on the side close to the first conductive semiconductor layer 18a and the second conductive semiconductor layer 18c, respectively. Is preferred. Examples of the material layer having a high reflectance include an Ag layer, an Ag alloy layer, and an Al layer. In the case of using an Ag layer or an Ag alloy layer, in order to suppress migration of Ag, it is preferable to cover the surface with a covering layer. As the covering layer, for example, a layer of Al, Cu, Ni or an alloy thereof can be used.

(Jointing member 21)
The electrodes 19 and 20 of the light emitting element 12 and the connection terminals 15 and 16 of the base 11 are bonded by a bonding member 21. Suitable materials for the bonding member 21 include, for example, tin-bismuth, tin-copper, tin-silver, gold-tin solders (specifically, Ag, Cu and Sn as main components) Alloys, alloys containing Cu and Sn as main components, alloys containing Bi and Sn as main components, eutectic alloys (alloys containing Au and Sn as main components, Au and Si as main components Alloys, alloys containing Au and Ge as main components, and the like) conductive pastes such as silver, gold and palladium, bumps, anisotropic conductive materials, brazing materials such as low melting point metals, and the like.

(Wavelength conversion member 14)
The wavelength conversion member 14 includes a phosphor and a translucent material. The translucent material is a material which transmits 60% or more of the light emitted from the light emitting element 12, more preferably a material which transmits 70%, 80% or 90% or more. As the translucent material, a resin material is preferable. For example, a silicone resin, a silicone-modified resin, an epoxy resin, a phenol resin, a polycarbonate resin, an acrylic resin, a TPX resin, a polynorbornene resin, or a hybrid containing one or more of these resins Resins such as resin, glass and the like can be mentioned. A silicone resin or an epoxy resin is preferable, and in particular, a silicone resin excellent in light resistance and heat resistance is more preferable.

A phosphor that is excited by light from the light emitting element 12 is used. For example, a cerium-activated yttrium aluminum garnet (YAG) phosphor, a cerium-activated lutetium aluminum garnet (LAG), a europium and / or a chromium-activated nitrogen-containing calcium aluminosilicate (CaO- Al ₂ O ₃ -SiO ₂ ) phosphors, europium-activated silicate ((Sr, Ba) ₂ SiO ₄ ) phosphors, β sialon phosphors, nitride phosphors such as CASN or SCASN phosphors, etc. , KSF phosphors (K ₂ SiF ₆ : Mn), sulfide phosphors and the like. By appropriately combining these phosphors with the light emitting element 12 that emits blue light or ultraviolet light, light emitting devices of various colors (for example, white light emitting devices) can be manufactured.

  The wavelength conversion member 14 may contain a filler (for example, a diffusing agent, a colorant, etc.). Examples thereof include silica, titanium oxide, zirconium oxide, magnesium oxide, and glass.

  The content of the phosphor and / or filler is preferably about 10 to 80% by weight with respect to the total weight of the wavelength conversion member 14, for example.

  Examples of the method for manufacturing a light emitting device according to an embodiment of the present invention will be specifically described below.

Example 1
The light emitting device 10 manufactured in this embodiment includes a base 11, a light emitting element 12, a support member 13, and a wavelength conversion member 14 as shown in FIGS. 1A and 1B.

  The base material 11a of the base 11 is formed by impregnating a commercially available glass cloth with a BT resin composition containing a naphthalene-based epoxy resin. The connection terminals 15 and 16 are formed by laminating Cu / Ni / Au (total thickness: 20 μm) from the side of the base material 11 a.

The light emitting element 12 includes a sapphire substrate (thickness: 50 μm) as a translucent substrate 17 and a semiconductor laminate (thickness: about 8 to 12 μm) 18 formed thereon. The semiconductor laminate 18 has a pair of positive and negative electrodes 19 and 20 on the surface (the lower surface 18 d in FIG. 1D) opposite to the sapphire substrate 17. The light emitting element 12 has its positive and negative electrodes 19 and 20 connected to the pair of connection terminals 15 and 16 of the base 11 by Au-Sn eutectic solder (thickness: 20 μm) as the bonding member 21 respectively. .
The light emitting element 12 uses an LED that emits blue light (emission center wavelength 455 nm). The LED is a rectangular parallelepiped having a length (dimension in the longitudinal direction (x direction)) of 1100 μm, a width (dimension in the short direction (y direction)) 230 μm, and a thickness (dimension in the z direction) of 100 μm.

  The supporting member 13 is formed in a substantially rectangular parallelepiped shape having an outer dimension of 1200 μm in length, 300 μm in width, and 150 μm in thickness. The side surface along the longitudinal direction (x direction) of the support member 13 forms the same surface as the side surface along the longitudinal direction (x direction) of the base body 11. The first portion 13 a of the support member 13 covers the entire circumference of the side surface of the light emitting element 12. In the gap between the light emitting element 12 and the base 11, the second portion 13b of the support member 13 is provided integrally with the first portion 13a. The upper surface 13 u of the support member 13 substantially coincides with the upper surface 12 u of the light emitting element 12 (see FIG. 1D). The support member 13 was formed of a silicone resin containing silica having an average particle diameter of 14 μm and titanium oxide having an average particle diameter of 0.25 to 0.3 μm. Silica and titanium oxide are contained at 2 to 2.5 wt% and 40 to 50 wt%, respectively, with respect to the total weight of the support member 13.

  A wavelength conversion member 14 (thickness: 20 μm) is disposed on the upper surface 12 u of the light emitting element 12. The wavelength conversion member 14 is formed of a silicone resin containing a YAG: Ce phosphor. The wavelength conversion member 14 also covers the upper surface 13 u of the support member 13. The outer peripheral edge of the wavelength conversion member 14 matches the outer peripheral edge of the upper surface 13 u of the support member 13.

  The light emitting device 10 of this embodiment can be manufactured by the following manufacturing method. First, according to the first step of the first embodiment, the translucent substrate 170, the semiconductor stacked body 18 disposed on the first main surface 171 and the pair of electrodes disposed on the lower surface 18d of the semiconductor stacked body 18 The light emitting element 120 provided with 19 and 20 is prepared (FIG. 1D, FIG. 2H). On the side surface 173 of the translucent substrate 170, a degenerated portion M (light absorbing portion Abs) by laser scribing is formed. In FIG. 2F, each dimension in the z direction is about 125 μm for the translucent substrate 170, about 80 μm for the translucent portion Tr on the first main surface 171 side, about 24 μm for the altered portion M, and about the second main surface 172 side. The light transmission part Tr of is 21 .mu.m. As shown in FIGS. 3A and 3B, the base 11 including the pair of connection terminals 15 and 16 is prepared. As shown in FIG. 3C, bumps of the joining member 21 (solder) are formed on the base 11 on the connection terminals 15 and 16. The pair of electrodes 19 and 20 of the light emitting element 120 are arranged in a flip chip so as to face the bonding member 21 on the connection terminals 15 and 16 respectively, and heated at 250 ° C. to reflow and cool the bonding member 21. In this way, the light emitting element 12 is bonded onto the upper surface 11u of the base 11 (see FIG. 3D).

  Thereafter, as shown in FIG. 3E, the entire light emitting element 120 is covered with the support member 13. The support member 13 is coated by transfer molding. By such a molding method, the first portion 13 a of the support member 13 can be formed on the side surface of the light emitting element 120, and the second portion 13 b of the support member 13 can be disposed in the gap between the light emitting element 120 and the base body 11. .

  As shown in FIGS. 3E to 3F, the substrate 170 of the light emitting element 12 and the first portion 13a of the support member 13 are thinned from the second main surface 172 side of the substrate 170 of the light emitting element 120 using a grinding device. . As a grinding wheel for grinding, a grinding wheel formed from a material (for example, diamond, SiC) harder than the substrate 17 is used, and a processing rate is set to, for example, about 0.05 to 5 μm / second. In this embodiment, the substrate 170 and the support member 13 are simultaneously thinned until the substrate 17 has a thickness of 50 μm. The altered portion M (FIG. 2F) on the side surface 173 of the optical substrate 170 is removed. In the light emitting element 12 after grinding, the upper surface 13u of the support member 13 and the upper surface 17u of the substrate 17 of the light emitting element 12 are flush with each other (FIG. 3F).

  The top surface 17 u of the substrate 17 is subjected to surface treatment. For example, the process which forms a grid | lattice-like or linear groove | channel or peak in the upper surface of the board | substrate 17, processing to a lens shape, etc. are mentioned. These surface treatments can be used by appropriately setting known methods and conditions. Next, as shown in FIG. 3G, a protective member P that covers the upper surface 11u of the base 11 and the outer surface of the support member 13 is provided. The wavelength conversion member 14 is coated on the upper surface 17u of the substrate 17 of the light emitting element 12 and the upper surface of the support member 13 by a pulse spray method.

  Finally, the protective member P is removed to obtain the light emitting device 10 (FIG. 1C).

Example 2
In the manufacturing method of the light-emitting device 10A in Example 2, although the light-transmitting substrate 170 and the support member 13 of the light-emitting element 12 are made thin, the support member 13 is easily scraped and the light-transmitting substrate 170 is difficult to scrape (for example, Grind using an alumina grindstone. As a result, as shown in FIG. 7, the upper surface 13 u of the support member 13 can be slightly lower (for example, about 5 μm) than the upper surface 17 u of the translucent substrate 17 of the light emitting element 12.

  In addition to the side light emitting type (referred to as a side view type) light emitting device 10 exemplified in the embodiments and examples, the present invention is applied to a light emitting device of an upper surface light emitting type (referred to as a top view type). Can also be applied.

  A method of manufacturing a light emitting device according to an embodiment of the present invention includes a backlight light source of a liquid crystal display, various lighting fixtures, a large display, various display devices such as an advertisement and a destination guide, and a digital video camera, a facsimile machine, a copier, The present invention can be used to manufacture a light emitting device that can be used for an image reading device in a scanner or the like, a projector device, or the like.

10, 10A, 40 Light-emitting device 11 Base body 11a, 11b, 82 Base material 11c, 11d Through hole 12 Light-emitting element 120 Light-emitting element before processing 13 Support member 14 Wavelength converting member 15, 15a, 16, 16a, Connection terminal 17 Translucent light Transparent substrate 170 translucent substrate before processing 18 semiconductor laminate 19, 20 electrode 21 bonding member 22 composite connection terminal 24 composite substrate 24a base material 25 slit 44 composite substrate 45, 45a, 46 composite connection terminal Tr light transmitting portion M deterioration Part Abs light absorption part

Claims (7)

A translucent substrate comprising a first main surface, a second main surface, a translucent portion and a side surface having a light absorbing portion having a light transmittance lower than that of the translucent portion, and the translucent substrate A first step of preparing a light emitting device including a semiconductor laminate provided on the first main surface;
A second step of bonding the light emitting element such that the side provided with the semiconductor laminate is opposed to the upper surface of the base having the connection terminal on the upper surface;
Have covered a part of the side surface and the base of the light emitting element, a third step of providing a support member to expose a portion of the connection terminals of the upper surface of the substrate,
After the third step, reducing the thickness of the light-transmissive substrate to a thickness of 1 μm to 100 μm from the second main surface side, and removing the light absorbing portion;
And a fifth step of forming a wavelength conversion member on the upper surface of the light emitting element in a state where the side surface of the support member and the upper surface of the connection terminal exposed from the support member are covered with a protective member after the fourth step. Manufacturing method of light-emitting device.   The manufacturing method according to claim 1, wherein the support member covers up to the second main surface of the translucent substrate.   The method according to claim 1, wherein the support member fills a gap between the light emitting element and the upper surface of the base. The light emitting element is
Laminating a plurality of semiconductor layers on the wafer for forming the translucent substrate;
Irradiating the light-transmitting substrate with a laser along the dividing line of the wafer to form the light absorbing portion;
The manufacturing method according to any one of claims 1 to 3, wherein the light emitting element is manufactured by a method including: a step of dividing the light absorbing portion into a plurality of the light emitting elements.   The said light absorption part is a manufacturing method of any one of Claims 1-4 provided in the position away from the said 2nd main surface of the said translucent board | substrate in the said 1st process. .   The manufacturing method according to any one of claims 1 to 5, wherein the support member is a resin containing a light reflecting material. In the second step, a plurality of the light emitting elements are mounted on the upper surface of the base,
In the third step, the space between the adjacent light emitting elements is filled with the support member,
The manufacturing method according to any one of claims 1 to 6 , further comprising the step of dividing the substrate into a light emitting device provided with one light emitting element after the fourth step.

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