JP6529885B2 - Magnetic sensor, method of measuring magnetic field, current sensor, and method of measuring current - Google Patents
Magnetic sensor, method of measuring magnetic field, current sensor, and method of measuring current Download PDFInfo
- Publication number
- JP6529885B2 JP6529885B2 JP2015205633A JP2015205633A JP6529885B2 JP 6529885 B2 JP6529885 B2 JP 6529885B2 JP 2015205633 A JP2015205633 A JP 2015205633A JP 2015205633 A JP2015205633 A JP 2015205633A JP 6529885 B2 JP6529885 B2 JP 6529885B2
- Authority
- JP
- Japan
- Prior art keywords
- magnetic field
- magnetic
- measured
- layer
- magnetoresistance effect
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Landscapes
- Measuring Magnetic Variables (AREA)
- Measuring Instrument Details And Bridges, And Automatic Balancing Devices (AREA)
- Hall/Mr Elements (AREA)
Description
本発明は、磁気センサ、当該磁気センサを用いる磁界の測定方法、当該磁気センサを備える電流センサ、および当該電流センサを用いる電流の測定方法に関する。 The present invention relates to a magnetic sensor, a method of measuring a magnetic field using the magnetic sensor, a current sensor including the magnetic sensor, and a method of measuring a current using the current sensor.
特許文献１には、被測定電流からの誘導磁界の印加により抵抗値が変化する４つの磁気抵抗効果素子で構成され、２つの磁気抵抗効果素子間の出力を備える磁界検出ブリッジ回路を有する電流センサであって、前記４つの磁気抵抗効果素子は、抵抗変化率が同じであり、反平行結合膜を介して第１の強磁性膜と第２の強磁性膜とを反強磁性的に結合させてなるセルフピン止め型の強磁性固定層と、非磁性中間層と、軟磁性自由層とを有し、前記出力を与える２つの磁気抵抗効果素子の強磁性固定層の磁化方向が互いに１８０°異なる方向であり、前記磁気検出ブリッジ回路は、電源供給点に対して対称である配線を有する電流センサが開示されている。 Patent Document 1 discloses a current sensor having a magnetic field detection bridge circuit including an output between two magnetoresistance effect elements, which includes four magnetoresistance effect elements whose resistance value is changed by application of an induction magnetic field from a current to be measured. The four magnetoresistance effect elements have the same rate of change in resistance, and antiferromagnetically couple the first ferromagnetic film and the second ferromagnetic film via the antiparallel coupling film. And the nonmagnetic intermediate layer, and the soft magnetic free layer, and the magnetization directions of the ferromagnetic fixed layers of the two magnetoresistance effect elements giving the output differ from each other by 180 °. A current sensor is disclosed, wherein the magnetic detection bridge circuit is a direction, and the wiring is symmetrical with respect to a power supply point.
特許文献１に開示される磁気検出ブリッジ回路を備えることにより、線形応答性に優れる磁気センサが得られ、この特性を活かすことにより、測定精度の高い電流センサを得ることができる。 By providing the magnetic detection bridge circuit disclosed in Patent Document 1, a magnetic sensor having excellent linear response can be obtained, and by utilizing this characteristic, a current sensor with high measurement accuracy can be obtained.
このように特許文献１に開示される磁気センサは優れた線形応答性を有するが、この磁気センサにおけるセンサ出力の被測定磁界に対する応答プロファイルでは、線形応答性を有する線形領域が、被測定磁界が印加されていない場合に対して対象に位置する。このため、被測定磁界の印加が一方の向きにのみ行われる場合には、線形応答性に優れていながら線形領域の半分しか使用されないことになる。 As described above, the magnetic sensor disclosed in Patent Document 1 has excellent linear response, but in the response profile of the sensor output in this magnetic sensor to the measured magnetic field, the linear region having the linear response is the measured magnetic field. Positioned relative to the case where it is not applied. Therefore, when the application of the magnetic field to be measured is performed in only one direction, only half of the linear region is used while having excellent linear response.
本発明は、特許文献１に開示される磁気センサをベースとして、応答プロファイルにおいて線形応答性に優れる範囲をより有効に使用しうる磁気センサおよびかかる磁気センサを備える電流センサ、ならびに上記の磁気センサを用いた磁気の測定方法およびその磁気の測定方法を用いる電流の測定方法を提供することを目的とする。 The present invention is a magnetic sensor based on the magnetic sensor disclosed in Patent Document 1, which can more effectively use a range excellent in linear response in a response profile, a current sensor including the magnetic sensor, and the above magnetic sensor. An object of the present invention is to provide a measuring method of magnetism used and a measuring method of current using the measuring method of magnetism.
上記課題を解決すべく本発明者が検討した結果、磁界検出ブリッジ回路が備える４つの磁気抵抗効果素子の軟磁性自由層について、感度軸に直交する方向（すなわち、ミアンダ形状を有する磁気抵抗効果素子における帯状の長尺パターンの長手方向）に沿った向きの成分（第１成分）のみならず、感度軸に沿った一方の向きの成分（第２成分）を有するように磁化しておき、その第２成分の向きを、被測定磁界の向きに対して反対向きになるように制御することで、この磁気センサの応答プロファイルにおける線形性を有する領域を、被測定磁界が印加されていない場合に対して非対称に位置するようにすることができるとの新たな知見を得た。被測定磁界が印加される向きを第２成分の向きに対して反対向きとすることで、応答プロファイルにおける線形領域をより有効に使用することができる。 As a result of the present inventor's investigation to solve the above problems, the direction perpendicular to the sensitivity axis (that is, the magnetoresistive element having a meander shape) of soft magnetic free layers of four magnetoresistive elements provided in the magnetic field detection bridge circuit In addition to the component (first component) in the direction along the longitudinal direction of the strip-like elongated pattern in (1), it is magnetized so as to have a component (second component) in one direction along the sensitivity axis, By controlling the direction of the second component to be opposite to the direction of the magnetic field to be measured, a region having linearity in the response profile of this magnetic sensor is not applied when the magnetic field to be measured is not applied. We have obtained new findings that it can be positioned asymmetrically. By making the direction in which the magnetic field to be measured is applied opposite to the direction of the second component, the linear region in the response profile can be used more effectively.
以上の知見に基づき完成された本発明は、一態様において、外部磁界の変化に応じて抵抗値が変化する４つの磁気抵抗効果素子で構成され、２つの磁気抵抗効果素子間の出力を２つ備える磁界検出ブリッジ回路を有する磁気センサであって、前記４つの磁気抵抗効果素子は、等しい抵抗変化率特性を有し、セルフピン止め型の強磁性固定層と、非磁性中間層と、軟磁性自由層とを有し、帯状の長尺パターンが折り返されたミアンダ形状であって、前記出力を与える２つの磁気抵抗効果素子の強磁性固定層は、前記帯状の長尺パターンの幅方向に沿った方向であって互いに反対向きに磁化され、前記出力を与える２つの磁気抵抗効果素子の軟磁性自由層は、被測定磁界が印加されていない状態において、前記帯状の長尺パターンの長手方向に沿った方向であって互いに反対向きの第１成分と、前記帯状の長尺パターンの幅方向に沿った一方の向きの第２成分とを有するように磁化され、前記第１成分および前記第２成分は、前記軟磁性自由層の前記非磁性中間層に対向する側とは反対側に設けられた反強磁性層と前記軟磁性自由層との交換結合磁界に由来し、前記第２成分の向きは、前記磁気センサの感度軸に沿い、前記被測定磁界が印加される向きに対して反対向きであることを特徴とする磁気センサである。 The present invention completed based on the above findings is, according to one aspect, configured of four magnetoresistive elements whose resistance value changes in accordance with a change in an external magnetic field, and two outputs between two magnetoresistive elements are provided. A magnetic sensor having a magnetic field detection bridge circuit, wherein the four magnetoresistive elements have the same rate of resistance change characteristics, and are a self-pinned ferromagnetic fixed layer, a nonmagnetic intermediate layer, and a soft magnetic free layer. A ferromagnetic fixed layer of the two magnetoresistance effect elements having a layer and having a strip-like long pattern folded back and providing the output, the ferromagnetic fixed layers of the two magnetoresistive elements being along the width direction of the strip-like long pattern The soft magnetic free layers of the two magnetoresistance effect elements, which are magnetized in opposite directions from each other and give the output, are aligned along the longitudinal direction of the strip-like long pattern when no magnetic field to be measured is applied. And a first component of the opposite direction to each other in a direction, are magnetized to a second component of said band-shaped one direction along the width direction of the long pattern, the first component and the second component Is derived from the exchange coupling magnetic field between the antiferromagnetic layer provided on the opposite side to the side facing the nonmagnetic intermediate layer of the soft magnetic free layer and the soft magnetic free layer, and the direction of the second component is along the sensitivity axis of the magnetic sensor is a magnetic sensor, wherein opposite der Rukoto to the direction in which the measured magnetic field is applied.
一般的には、軟磁性自由層の磁化の向きは、被測定磁界が０ｍＴの時、被測定磁界の向きに沿った方向の成分を有しないように設定される。このように設定されることによって、被測定磁界の向きが反転しても、双方の向きについてバランスよく線形応答できるようになっている。しかしながら、被測定磁界の向きが反転することがなく、一方の向きに固定されている場合には、あらかじめ、被測定磁界の向きに対して反対向きの成分を有するように軟磁性自由層を磁化することにより、一方の向きに固定された被測定磁界の線形応答の範囲を広げることができる。すなわち、前記帯状の長尺パターンの幅方向に沿った前記第２成分の向きは、前記被測定磁界が印加される向きに対して反対向きであることにより、被測定磁界に対して線形応答する範囲を広げることができる。 In general, the direction of magnetization of the soft magnetic free layer is set so as to have no component in the direction along the direction of the magnetic field to be measured when the magnetic field to be measured is 0 mT. By setting in this manner, even if the direction of the magnetic field to be measured is reversed, it is possible to make a linear response in a balanced manner in both directions. However, when the direction of the magnetic field to be measured does not reverse and it is fixed in one direction, the soft magnetic free layer is previously magnetized so as to have a component opposite to the direction of the magnetic field to be measured By doing this, the range of the linear response of the measured magnetic field fixed in one direction can be expanded. That is, the direction of the second component along the width direction of the strip-like elongated pattern linearly responds to the measured magnetic field by being opposite to the direction in which the measured magnetic field is applied. The range can be expanded.
上記の磁気センサにおいて、前記４つの磁気抵抗効果素子は、前記軟磁性自由層の磁化における前記第２成分の大きさが等しくなるようにすることが好ましい。そして、前記２つの出力間の電位差の前記被測定磁界に対する応答プロファイルは、前記２つの出力間の電位差が前記被測定磁界に対して線形応答する線形領域を備え、前記線形領域は、前記被測定磁界が印加されていない場合（印加磁場が０ｍＴの場合）に対して非対称に位置することが好ましい。 In the above magnetic sensor, it is preferable that in the four magnetoresistive elements, the magnitudes of the second components in the magnetization of the soft magnetic free layer be equal. The response profile of the potential difference between the two outputs to the measured magnetic field comprises a linear region in which the potential difference between the two outputs linearly responds to the measured magnetic field, and the linear region is the measured region. It is preferable to be positioned asymmetrically with respect to the case where no magnetic field is applied (when the applied magnetic field is 0 mT).
本発明は、他の一態様において、上記の本発明の一態様に係る磁気センサを用いて、前記第２成分の向きに対して反対向きに印加された磁界を被測定磁界として測定する、磁界の測定方法である。かかる磁界の測定方法によれば、被測定磁界に対して線形的に応答する範囲を広げることができる。 In another aspect, the present invention uses a magnetic sensor according to one aspect of the present invention to measure a magnetic field applied in the opposite direction to the direction of the second component as a magnetic field to be measured. Measurement method. According to the method of measuring the magnetic field, the range of linear response to the magnetic field to be measured can be expanded.
本発明は、別の一態様において、上記の本発明の一態様に係る磁気センサを備え、前記磁気センサの被測定磁界は、被測定電流により生じた誘導磁界である、電流センサである。 The present invention is, in another aspect, a current sensor including the magnetic sensor according to the above aspect of the present invention, wherein the measured magnetic field of the magnetic sensor is an induced magnetic field generated by a measured current.
本発明は、また別の一態様において、被測定電流により生じた誘導磁界を、上記の本発明の他の一態様に係る方法における被測定磁界として、前記被測定電流を定量的に測定する、電流の測定方法である。 In another aspect, the present invention quantitatively measures an induced magnetic field generated by a measured current as the measured magnetic field in the method according to the other aspect of the present invention. It is a measurement method of current.
本発明によれば、応答プロファイルにおいて線形応答性に優れる範囲をより有効に使用しうる磁気センサが提供される。また、本発明によれば、上記の磁気センサを備える電流センサ、ならびに上記の磁気センサを用いた磁気の測定方法およびその磁気の測定方法を用いる電流の測定方法が提供される。 According to the present invention, a magnetic sensor is provided which can more effectively use the range in which the linear response is excellent in the response profile. Further, according to the present invention, a current sensor provided with the above magnetic sensor, a method of measuring magnetism using the above magnetic sensor, and a method of measuring current using the method of measuring the magnetism are provided.
以下、本発明の実施の形態について、添付図面を参照して詳細に説明する。 Hereinafter, embodiments of the present invention will be described in detail with reference to the attached drawings.
図１は、本発明の実施形態の一つ（第１実施形態）に係る磁気センサの構造を概念的に示す平面図である。 FIG. 1 is a plan view conceptually showing the structure of a magnetic sensor according to one embodiment (first embodiment) of the present invention.
第１実施形態に係る磁気センサ１０は、外部磁界の変化に応じて抵抗値が変化する４つの磁気抵抗効果素子で構成され、２つの磁気抵抗効果素子間の出力を２つ備える磁界検出ブリッジ回路１１を有する。具体的には、４つの磁気抵抗効果素子はいずれも抵抗変化率特性が等しく、２種類の磁気抵抗効果素子（第１の磁気抵抗効果素子ＧＭＲ１，第２の磁気抵抗効果素子ＧＭＲ２）から構成される。 The magnetic sensor 10 according to the first embodiment is composed of four magnetoresistive elements whose resistance value changes in accordance with a change in an external magnetic field, and a magnetic field detection bridge circuit including two outputs between two magnetoresistive elements. Have eleven. Specifically, all of the four magnetoresistance effect elements have the same rate of resistance change characteristics, and are constituted by two types of magnetoresistance effect elements (first magnetoresistance effect element GMR1, second magnetoresistance effect element GMR2). Ru.
磁界検出ブリッジ回路１１は、電源給電点である電源端子Ｖｄｄに、第１の磁気抵抗効果素子ＧＭＲ１と第２の磁気抵抗効果素子ＧＭＲ２とが直列に接続された部分の第１の磁気抵抗効果素子ＧＭＲ１側端部と、第２の磁気抵抗効果素子ＧＭＲ２と第１の磁気抵抗効果素子ＧＭＲ１とが直列に接続された部分の第２の磁気抵抗効果素子ＧＭＲ２側端部とが並列で接続され、それぞれの部分における反対側の端部は、グランド（Ｇｎｄ１，Ｇｎｄ２）に接続されている。 The magnetic field detection bridge circuit 11 is a first magnetoresistance effect element in a portion where the first magnetoresistance effect element GMR1 and the second magnetoresistance effect element GMR2 are connected in series to the power supply terminal Vdd which is a power supply point. The GMR1 side end portion is connected in parallel to the second magnetoresistance effect element GMR2 side end portion of a portion where the second magnetoresistance effect element GMR2 and the first magnetoresistance effect element GMR1 are connected in series, The opposite end of each part is connected to the ground (Gnd1, Gnd2).
直列に接続された第１の磁気抵抗効果素子ＧＭＲ１と第２の磁気抵抗効果素子ＧＭＲ２との間には一つの出力（Ｏｕｔ１）が設けられ、直列に接続された第２の磁気抵抗効果素子ＧＭＲ２と第１の磁気抵抗効果素子ＧＭＲ１との間には一つの出力（Ｏｕｔ２）が設けられる。これらの２つの出力における電位差（Ｏｕｔ１−Ｏｕｔ２、中点電位差）に基づくことより、外部から印加された磁場（印加磁場）の大きさを定量的に測定することができる。 One output (Out1) is provided between the first magnetoresistance effect element GMR1 and the second magnetoresistance effect element GMR2 connected in series, and the second magnetoresistance effect element GMR2 connected in series One output (Out2) is provided between the and the first magnetoresistance effect element GMR1. The magnitude of the externally applied magnetic field (applied magnetic field) can be quantitatively measured based on the potential difference (Out1-Out2, middle point potential difference) in these two outputs.
また、第１実施形態に係る磁気センサ１０は、磁界検出ブリッジ回路１１の近傍にコイル１２を備える。図１に示される磁気センサ１０では、コイル１２に通電することにより生じた誘導磁界が磁界検出ブリッジ回路１１の４つの磁気抵抗効果素子に対して等しい大きさおよび向きで印加されるように、磁気抵抗効果素子とコイル１２との関係は設定されている。 In addition, the magnetic sensor 10 according to the first embodiment includes the coil 12 in the vicinity of the magnetic field detection bridge circuit 11. In the magnetic sensor 10 shown in FIG. 1, the magnetic field is generated such that an induced magnetic field generated by energizing the coil 12 is applied with equal magnitude and direction to the four magnetoresistive elements of the magnetic field detection bridge circuit 11. The relationship between the resistance effect element and the coil 12 is set.
図２は、第１実施形態に係る磁気センサ１０が備える第１の磁気抵抗効果素子ＧＭＲ１の構造および磁化の状態を概念的に示す平面図である。第１の磁気抵抗効果素子ＧＭＲ１は、図２に示すように、その長手方向が互いに平行になるように配置された複数の帯状の長尺パターン（ストライプ）ＳＰが折り返してなる形状（ミアンダ形状）を有する。複数の長尺パターンＳＰは、両端部で電極ＥＬにより直列に連結される。このミアンダ形状において、感度軸方向（Ｐｉｎ方向）は、長尺パターンＳＰの長手方向（ストライプ長手方向）に対して直交する幅方向（ストライプ幅方向）である。このミアンダ形状においては、被測定磁界となる外部から印加された磁界が長尺パターンＳＰの幅方向（ストライプ幅方向）に沿うように印加され、コイル１２により生じる誘導磁界は、長尺パターンＳＰの幅方向（ストライプ幅方向）に沿うように印加される。被測定磁界が印加される向きは、コイル１２により生じる誘導磁界（コイル磁場）の印加される向きとは反対向きとされる。 FIG. 2 is a plan view conceptually showing the structure and the state of magnetization of the first magnetoresistance effect element GMR1 included in the magnetic sensor 10 according to the first embodiment. As shown in FIG. 2, the first magnetoresistive element GMR1 has a shape (meander shape) in which a plurality of strip-like long patterns (stripes) SP arranged so that their longitudinal directions are parallel to one another are folded Have. The plurality of long patterns SP are connected in series by the electrodes EL at both ends. In this meander shape, the sensitivity axis direction (Pin direction) is a width direction (stripe width direction) orthogonal to the longitudinal direction (stripe longitudinal direction) of the long pattern SP. In this meander shape, the magnetic field applied from the outside to be the magnetic field to be measured is applied along the width direction (stripe width direction) of the long pattern SP, and the induction magnetic field generated by the coil 12 is of the long pattern SP. The voltage is applied along the width direction (stripe width direction). The direction in which the magnetic field to be measured is applied is opposite to the direction in which the induction magnetic field (coil magnetic field) generated by the coil 12 is applied.
第１実施形態に係る磁気センサが備える第１の磁気抵抗効果素子ＧＭＲ１の長尺パターンＳＰは、ＲＫＫＹ相互作用に基づくセルフピン止め型の強磁性固定層と、非磁性中間層と、軟磁性自由層と、反強磁性層とを有する。具体的には、図４に示されるように、長尺パターンＳＰは、シード層２０、第１の強磁性膜２１ａと反平行結合膜２１ｂと第２の強磁性膜２１ｃとからなるセルフピン止め型の強磁性固定層２１、非磁性中間層２２、軟磁性自由層（フリー磁性層）２３、反強磁性層２４および保護層２５を含む積層構造を基板２９上に有する。 The long pattern SP of the first magnetoresistance effect element GMR1 included in the magnetic sensor according to the first embodiment includes a self-pinned ferromagnetic fixed layer based on RKKY interaction, a nonmagnetic intermediate layer, and a soft magnetic free layer And an antiferromagnetic layer. Specifically, as shown in FIG. 4, the long pattern SP is a self-pinned type including the seed layer 20, the first ferromagnetic film 21a, the antiparallel coupling film 21b, and the second ferromagnetic film 21c. And a nonmagnetic intermediate layer 22, a soft magnetic free layer (free magnetic layer) 23, an antiferromagnetic layer 24 and a protective layer 25 on the substrate 29.
シード層２０は、ＮｉＦｅＣｒあるいはＣｒなどで構成される。なお、上記積層構造において、基板２９とシード層２０との間に、例えば、Ｔａ，Ｈｆ，Ｎｂ，Ｚｒ，Ｔｉ，Ｍｏ，Ｗのうち少なくとも１つの元素などの非磁性材料で構成される下地層を設けてもよい。保護層２５は、Ｔａなどで構成される。 The seed layer 20 is made of NiFeCr or Cr. In the above laminated structure, an underlayer formed of a nonmagnetic material such as at least one of Ta, Hf, Nb, Zr, Ti, Mo and W between the substrate 29 and the seed layer 20, for example. May be provided. The protective layer 25 is made of Ta or the like.
強磁性固定層２１は、反平行結合膜２１ｂを介して配置される第１の強磁性膜２１ａと第２の強磁性膜２１ｃとがＲＫＫＹ相互作用することにより、一方の向きに磁化が固定されている。図２に示されるように、第１実施形態に係る磁気センサ１０が備える第１の磁気抵抗効果素子ＧＭＲ１では、長尺パターンＳＰの幅方向でコイル磁場の向きと同じ向き（図２では上から下への向き、図４では左から右への向き）に磁化が固定されている。 In the ferromagnetic fixed layer 21, the magnetization is fixed in one direction by the RKKY interaction between the first ferromagnetic film 21a and the second ferromagnetic film 21c disposed via the antiparallel coupling film 21b. ing. As shown in FIG. 2, in the first magnetoresistance effect element GMR1 included in the magnetic sensor 10 according to the first embodiment, the same direction as the direction of the coil magnetic field in the width direction of the long pattern SP (in FIG. The magnetization is fixed in the downward direction (the direction from left to right in FIG. 4).
第１の強磁性膜２１ａおよび第２の強磁性膜２１ｃを構成する材料として、いずれもＣｏＦｅ合金が例示される。第１の強磁性膜２１ａおよび第２の強磁性膜２１ｃがＣｏＦｅ合金から構成される場合において、第１の強磁性膜２１ａを構成するＣｏＦｅ合金におけるＦｅの含有量を第２の強磁性膜２１ｃを構成するＣｏＦｅ合金におけるＦｅの含有量よりも高くすることが好ましい。このようにすることで、第１の強磁性膜２１ａの保磁力が第２の強磁性膜２１ｃの保磁力よりも高くなり、製膜中に磁化された第１の強磁性膜２１ａによって第２の強磁性膜２１ｃが磁化されやすくなる。第１の強磁性膜２１ａと第２の強磁性膜２１ｃと間に位置する反平行結合膜２１ｂはＲｕなどにより構成される。 As a material which comprises the 1st ferromagnetic film 21a and the 2nd ferromagnetic film 21c, a CoFe alloy is illustrated by all. When the first ferromagnetic film 21a and the second ferromagnetic film 21c are formed of a CoFe alloy, the Fe content in the CoFe alloy constituting the first ferromagnetic film 21a is equal to the second ferromagnetic film 21c. It is preferable to make it higher than the content of Fe in the CoFe alloy which comprises By doing this, the coercivity of the first ferromagnetic film 21a becomes higher than the coercivity of the second ferromagnetic film 21c, and the second ferromagnetic film 21a is magnetized during film formation. The ferromagnetic film 21c is easily magnetized. The antiparallel coupling film 21b located between the first ferromagnetic film 21a and the second ferromagnetic film 21c is made of Ru or the like.
非磁性中間層２２は、Ｃｕなどにより構成される。軟磁性自由層（フリー層）２３は、ＣｏＦｅ合金、ＮｉＦｅ合金、ＣｏＦｅＮｉ合金などの磁性材料で構成される。軟磁性自由層（フリー層）２３は複数の膜からなる積層構造を有していてもよい。反強磁性層２４を構成する材料として、ＩｒＭｎ系の材料やＰｔＭｎ系の材料が例示される。 The nonmagnetic intermediate layer 22 is made of Cu or the like. The soft magnetic free layer (free layer) 23 is made of a magnetic material such as a CoFe alloy, a NiFe alloy, or a CoFeNi alloy. The soft magnetic free layer (free layer) 23 may have a laminated structure composed of a plurality of films. Examples of the material constituting the antiferromagnetic layer 24 include IrMn-based materials and PtMn-based materials.
反強磁性層２４はこれに接する軟磁性自由層（フリー層）２３と交換結合し、軟磁性自由層（フリー層）２３には交換結合磁界が生じる。第１実施形態に係る磁気センサ１０が備える第１の磁気抵抗効果素子ＧＭＲ１では、長尺パターンＳＰの長手方向の一方の向き（図２では左から右への向き、図４では紙面手前から奥への向き）に交換結合磁界の向きが設定されている。被測定磁界が印加されていない状態において、軟磁性自由層（フリー層）２３には、この交換結合磁界に加えて、長尺パターンＳＰの幅方向の一方の向き（図２では上から下への向き、図４では左から右への向き）にコイル１２からの誘導磁界（コイル磁場）が作用し、これらのベクトル和によって軟磁性自由層（フリー層）２３は磁化されている。本明細書において、被測定磁界が印加されていない状態における磁化を初期磁化ともいう。換言すれば、軟磁性自由層（フリー層）２３の初期磁化は、長尺パターンＳＰの長手方向の一方の向きの交換結合磁界からなる第１成分と、長尺パターンＳＰの幅方向の一方の向きのコイル磁場からなる第２成分とを有する。その結果、図２に示されるように、軟磁性自由層（フリー層）２３の初期磁化は、長尺パターンＳＰの長手方向の一方の向きから、被測定磁界の向きに対して反対向きに傾いた状態となる。 The antiferromagnetic layer 24 is exchange coupled with the soft magnetic free layer (free layer) 23 in contact therewith, and an exchange coupling magnetic field is generated in the soft magnetic free layer (free layer) 23. In the first magnetoresistance effect element GMR1 included in the magnetic sensor 10 according to the first embodiment, one direction in the longitudinal direction of the long pattern SP (the direction from left to right in FIG. 2, and from the front of the paper in FIG. Direction of the exchange coupling magnetic field is set. In the state where the magnetic field to be measured is not applied, in the soft magnetic free layer (free layer) 23, in addition to the exchange coupling magnetic field, one direction in the width direction of the long pattern SP (from top to bottom in FIG. 2) In FIG. 4, the induction magnetic field (coil magnetic field) from the coil 12 acts on the direction (from left to right in FIG. 4), and the soft magnetic free layer (free layer) 23 is magnetized by the vector sum. In the present specification, the magnetization in the state where the magnetic field to be measured is not applied is also referred to as initial magnetization. In other words, the initial magnetization of the soft magnetic free layer (free layer) 23 is a first component composed of an exchange coupling magnetic field in one direction in the longitudinal direction of the long pattern SP and one in the width direction of the long pattern SP. And a second component comprising a directed coiled magnetic field. As a result, as shown in FIG. 2, the initial magnetization of the soft magnetic free layer (free layer) 23 is inclined in the opposite direction with respect to the direction of the magnetic field to be measured from one longitudinal direction of the long pattern SP. It will be
第１の磁気抵抗効果素子ＧＭＲ１の長尺パターンＳＰは、スパッタリングなど公知の製膜手法を用いて各層を順次積層することによって形成することができる。必要に応じ製膜中に磁場を印加することによって、形成される層や膜を所定の方向に磁化させることができる。この磁場中製膜を行うことによって第１の強磁性膜２１ａを磁化し、磁化された第１の強磁性膜２１ａと層間結合することによって第２の強磁性膜２１ｃを磁化することができる。また、軟磁性自由層（フリー層）２３および反強磁性層２４も磁場中製膜することにより、所定の向きに磁化させることができる。反強磁性層２４がＩｒＭｎ系の材料から構成される場合には、この磁場中製膜によって反強磁性層２４と軟磁性自由層（フリー層）２３の間に交換結合磁界を発生させることができる。 The long pattern SP of the first magnetoresistance effect element GMR1 can be formed by sequentially laminating each layer using a known film forming method such as sputtering. The layer or film to be formed can be magnetized in a predetermined direction by applying a magnetic field during film formation as required. By performing film formation in this magnetic field, the first ferromagnetic film 21a can be magnetized, and the second ferromagnetic film 21c can be magnetized by interlayer coupling with the magnetized first ferromagnetic film 21a. The soft magnetic free layer (free layer) 23 and the antiferromagnetic layer 24 can also be magnetized in a predetermined direction by depositing in the magnetic field. When the antiferromagnetic layer 24 is made of an IrMn-based material, it is possible to generate an exchange coupling magnetic field between the antiferromagnetic layer 24 and the soft magnetic free layer (free layer) 23 by film formation in this magnetic field. it can.
図３は、第１実施形態に係る磁気センサ１０が備える第２の磁気抵抗効果素子ＧＭＲ２の構造および初期磁化の状態を概念的に示す平面図である。図３に示されるように、第２の磁気抵抗効果素子ＧＭＲ２は、第１の磁気抵抗効果素子ＧＭＲ１と同様にミアンダ形状を有し、その長尺パターンＳＰは、第１の磁気抵抗効果素子ＧＭＲ１の長尺パターンＳＰと同様に、ＲＫＫＹ相互作用に基づくセルフピン止め型の強磁性固定層と、非磁性中間層と、軟磁性自由層と、反強磁性層とを有する。第２の磁気抵抗効果素子ＧＭＲ２長尺パターンＳＰは、第１の磁気抵抗効果素子ＧＭＲ１の長尺パターンＳＰと同様に、スパッタリングなどの公知の製膜手法により形成することができる。 FIG. 3 is a plan view conceptually showing the structure of the second magnetoresistance effect element GMR2 included in the magnetic sensor 10 according to the first embodiment and the state of initial magnetization. As shown in FIG. 3, the second magnetoresistance effect element GMR2 has a meander shape like the first magnetoresistance effect element GMR1, and the long pattern SP has a first magnetoresistance effect element GMR1. Similar to the long pattern SP, it has a self-pinned ferromagnetic fixed layer based on RKKY interaction, a nonmagnetic intermediate layer, a soft magnetic free layer, and an antiferromagnetic layer. The second magnetoresistive element GMR2 long pattern SP can be formed by a known film forming method such as sputtering in the same manner as the first magnetoresistive element GMR1 long pattern SP.
第２の磁気抵抗効果素子ＧＭＲ２の強磁性固定層は、第１の磁気抵抗効果素子ＧＭＲ１の強磁性固定層と同様に長尺パターンＳＰの幅方向に沿っているが第１の磁気抵抗効果素子ＧＭＲ１の強磁性固定層とは反対向きに磁化されている。 The ferromagnetic pinned layer of the second magnetoresistance effect element GMR2 is along the width direction of the long pattern SP similarly to the ferromagnetic pinned layer of the first magnetoresistance effect element GMR1, but the first magnetoresistance effect element It is magnetized in the opposite direction to the ferromagnetic fixed layer of GMR1.
第２の磁気抵抗効果素子ＧＭＲ２の反強磁性層は、第１の磁気抵抗効果素子ＧＭＲ１の反強磁性層と同様に長尺パターンＳＰの長手方向に沿っているが第１の磁気抵抗効果素子ＧＭＲ１の反強磁性層とは反対向きに磁化されている。この反強磁性層との交換結合磁界およびコイル磁界が軟磁性自由層に作用するため、第２の磁気抵抗効果素子ＧＭＲ２の軟磁性自由層の初期磁化は、第１の磁気抵抗効果素子ＧＭＲ１の軟磁性自由層の初期磁化と対比して、第１成分の大きさは等しいがその向きは反対向きであり、第２成分は大きさおよび向きが等しい。 The antiferromagnetic layer of the second magnetoresistance effect element GMR2 is along the longitudinal direction of the long pattern SP like the antiferromagnetic layer of the first magnetoresistance effect element GMR1, but the first magnetoresistance effect element It is magnetized in the opposite direction to the antiferromagnetic layer of GMR1. Since the exchange coupling magnetic field with the antiferromagnetic layer and the coil magnetic field act on the soft magnetic free layer, the initial magnetization of the soft magnetic free layer of the second magnetoresistance effect element GMR2 is the same as that of the first magnetoresistance effect element GMR1. In contrast to the initial magnetization of the soft magnetic free layer, the magnitude of the first component is equal but the direction is opposite, and the second component is equal in magnitude and direction.
磁気検出ブリッジ回路１１がこのような２種の磁気抵抗効果素子（第１の磁気抵抗効果素子ＧＭＲ１、第２の磁気抵抗効果素子ＧＭＲ２）を備えることにより、磁気センサ１０の出力の被測定磁界（印加磁場）に対する応答性プロファイルは、図６に示されるように、印加磁場が０ｍＴから４ｍＴの範囲で線形的な応答を示す。図６中、太線となっている部分が線形応答を示す領域である。すなわち、第１実施形態に係る磁気センサ１０の２つの出力間の電位差（中点電位差）の被測定磁界に対する応答プロファイルは、２つの出力間の電位差（中点電位差）が被測定磁界に対して線形応答する線形領域を備え、この線形領域は、被測定磁界が印加されていない場合（印加磁場が０ｍＴの場合）に対して非対称に位置する。 The magnetic detection bridge circuit 11 includes such two types of magnetoresistance effect elements (a first magnetoresistance effect element GMR1 and a second magnetoresistance effect element GMR2), whereby the measured magnetic field of the output of the magnetic sensor 10 ( The response profile to the applied magnetic field shows a linear response in the range of 0 mT to 4 mT as shown in FIG. In FIG. 6, the bold lines indicate the linear response. That is, in the response profile of the potential difference (midpoint potential difference) between the two outputs of the magnetic sensor 10 according to the first embodiment to the measured magnetic field, the potential difference between the two outputs (midpoint potential difference) is The linear region has a linear response, and this linear region is asymmetrically located when no magnetic field to be measured is applied (when the applied magnetic field is 0 mT).
第１実施形態に係る磁気センサ１０はこのような応答性プロファイルを有するため、一方の向きにのみ数値変動する被測定対象磁界の広い範囲において線形応答することができる。なお、図６に示される応答プロファイルを与える磁気センサ１０は、被測定磁界が印加されていない場合（印加磁場が０ｍＴの場合）に磁気センサ１０の出力が０ｍＶとなるように、磁気センサ１０が備える制御ＩＣ（図示せず。）により出力値の調整が行われている。この制御ＩＣによる出力値調整が行われない場合には、応答プロファイルは、出力値の切片が正または負の値となる。 Since the magnetic sensor 10 according to the first embodiment has such a responsiveness profile, it can respond linearly in a wide range of the magnetic field to be measured, which numerically fluctuates in only one direction. The magnetic sensor 10 for providing the response profile shown in FIG. 6 is such that the output of the magnetic sensor 10 is 0 mV when the measured magnetic field is not applied (the applied magnetic field is 0 mT). Adjustment of an output value is performed by the control IC (not shown) provided. When the output value adjustment by the control IC is not performed, the response profile has a positive or negative value of the intercept of the output value.
これに対し、磁気センサ１０のコイル１２に対して通電を行わない場合には、コイル磁場が存在しないため、磁気センサ１０が備える磁気抵抗効果素子の軟磁性自由層の初期磁化における第２成分の大きさがゼロとなる。この場合には、磁気検出ブリッジ回路の中点電位差の被測定磁界（印加磁場）に対する応答性プロファイルは、図５に示されるように、印加磁場が−２ｍＴから２ｍＴの範囲で線形的な応答を示すものとなる。この磁気センサの場合には、一方の向きにのみ数値変動する被測定対象磁界に対して、広い範囲で線形応答することができない。 On the other hand, when the coil 12 of the magnetic sensor 10 is not energized, there is no coil magnetic field, so the second component of the initial magnetization of the soft magnetic free layer of the magnetoresistive element provided in the magnetic sensor 10 The size is zero. In this case, the response profile of the midpoint potential difference of the magnetic detection bridge circuit to the measured magnetic field (applied magnetic field) has a linear response in the range of -2 mT to 2 mT as shown in FIG. It will be shown. In the case of this magnetic sensor, it is not possible to make a linear response in a wide range to the magnetic field to be measured which numerically fluctuates in only one direction.
図７は、本発明の実施形態の他の一つ（第２実施形態）に係る磁気センサの構造を概念的に示す平面図である。 FIG. 7 is a plan view conceptually showing the structure of a magnetic sensor according to another embodiment (second embodiment) of the present invention.
第２実施形態に係る磁気センサ１０’は、外部磁界の変化に応じて抵抗値が変化する４つの磁気抵抗効果素子で構成され、２つの磁気抵抗効果素子間の出力を２つ備える磁界検出ブリッジ回路１１’を有する。具体的には、４つの磁気抵抗効果素子はいずれも抵抗変化率特性が等しく、２種類の磁気抵抗効果素子（第１の磁気抵抗効果素子ＧＭＲ１，第２の磁気抵抗効果素子ＧＭＲ２）から構成される。 A magnetic sensor 10 'according to the second embodiment includes four magnetoresistive elements whose resistance value changes according to a change in an external magnetic field, and a magnetic field detection bridge including two outputs between two magnetoresistive elements. It has a circuit 11 '. Specifically, all of the four magnetoresistance effect elements have the same rate of resistance change characteristics, and are constituted by two types of magnetoresistance effect elements (first magnetoresistance effect element GMR1, second magnetoresistance effect element GMR2). Ru.
磁界検出ブリッジ回路１１’の構成・配置は、第１実施形態に係る磁気センサ１０の磁界検出ブリッジ回路１１の構成・配置と共通するので、説明を省略する。 The configuration and arrangement of the magnetic field detection bridge circuit 11 'are the same as the configuration and arrangement of the magnetic field detection bridge circuit 11 of the magnetic sensor 10 according to the first embodiment, so the description will be omitted.
第１実施形態に係る磁気センサ１０は、軟磁性自由層（フリー層）の初期磁化の第２成分を与える磁場としてコイル１２を備えているが、第２実施形態に係る磁気センサ１０’は、後述するように、軟磁性自由層（フリー層）の初期磁化の第２成分を与える磁場として交換結合磁界を用いるため、第２実施形態に係る磁気センサ１０’は第２成分を与えるためのコイルを備えない。 The magnetic sensor 10 according to the first embodiment includes the coil 12 as a magnetic field that provides the second component of the initial magnetization of the soft magnetic free layer (free layer), but the magnetic sensor 10 ′ according to the second embodiment As will be described later, the magnetic sensor 10 'according to the second embodiment has a coil for providing the second component, since the exchange coupling magnetic field is used as the magnetic field for providing the second component of the initial magnetization of the soft magnetic free layer (free layer). Do not have
図８は、第２実施形態に係る磁気センサ１０’が備える第１の磁気抵抗効果素子ＧＭＲ１の構造および初期磁化の状態を概念的に示す平面図である。第１の磁気抵抗効果素子ＧＭＲ１は、図８に示すように、その長手方向が互いに平行になるように配置された複数の帯状の長尺パターン（ストライプ）ＳＰが折り返してなる形状（ミアンダ形状）を有する。複数の長尺パターンＳＰは、両端部で電極ＥＬにより直列に連結される。このミアンダ形状において、感度軸方向（Ｐｉｎ方向）は、長尺パターンＳＰの長手方向（ストライプ長手方向）に対して直交する幅方向（ストライプ幅方向）である。このミアンダ形状においては、被測定磁界となる外部からの磁界が長尺パターンＳＰの幅方向（ストライプ幅方向）に沿うように印加される。 FIG. 8 is a plan view conceptually showing the structure of the first magnetoresistance effect element GMR1 included in the magnetic sensor 10 'according to the second embodiment and the state of initial magnetization. As shown in FIG. 8, the first magnetoresistance effect element GMR1 has a shape (meander shape) formed by folding a plurality of strip-like long patterns (stripes) SP arranged so that their longitudinal directions are parallel to each other Have. The plurality of long patterns SP are connected in series by the electrodes EL at both ends. In this meander shape, the sensitivity axis direction (Pin direction) is a width direction (stripe width direction) orthogonal to the longitudinal direction (stripe longitudinal direction) of the long pattern SP. In this meander shape, an external magnetic field to be a measured magnetic field is applied along the width direction (stripe width direction) of the long pattern SP.
第１実施形態に係る磁気センサが備える第１の磁気抵抗効果素子ＧＭＲ１の長尺パターンＳＰは、ＲＫＫＹ相互作用に基づくセルフピン止め型の強磁性固定層と、非磁性中間層と、軟磁性自由層と、反強磁性層とを有する。具体的には、図１０に示されるように、長尺パターンＳＰは、シード層２０、第１の強磁性膜２１ａと反平行結合膜２１ｂと第２の強磁性膜２１ｃとからなるセルフピン止め型の強磁性固定層２１、非磁性中間層２２、軟磁性自由層（フリー磁性層）２３、反強磁性層２４および保護層２５を含む積層構造を基板２９上に有する。それぞれの層や膜を構成する材料は第１実施形態に係る磁気センサ１０の場合と同様であるから説明を省略する。 The long pattern SP of the first magnetoresistance effect element GMR1 included in the magnetic sensor according to the first embodiment includes a self-pinned ferromagnetic fixed layer based on RKKY interaction, a nonmagnetic intermediate layer, and a soft magnetic free layer And an antiferromagnetic layer. Specifically, as shown in FIG. 10, the long pattern SP is a self-pinned type including the seed layer 20, the first ferromagnetic film 21a, the antiparallel coupling film 21b, and the second ferromagnetic film 21c. And a nonmagnetic intermediate layer 22, a soft magnetic free layer (free magnetic layer) 23, an antiferromagnetic layer 24 and a protective layer 25 on the substrate 29. Since the material which comprises each layer and film is the same as that of the case of the magnetic sensor 10 which concerns on 1st Embodiment, description is abbreviate | omitted.
強磁性固定層２１は、反平行結合膜２１ｂを介して配置される第１の強磁性膜２１ａと第２の強磁性膜２１ｃとがＲＫＫＹ相互作用することにより、一方の向きに磁化が固定されている。図１０に示されるように、第２実施形態に係る磁気センサ１０’が備える第１の磁気抵抗効果素子ＧＭＲ１では、長尺パターンＳＰの幅方向で被測定磁界の向きと反対向き（図８では上から下への向き、図１０では左から右への向き）に磁化が固定されている。 In the ferromagnetic fixed layer 21, the magnetization is fixed in one direction by the RKKY interaction between the first ferromagnetic film 21a and the second ferromagnetic film 21c disposed via the antiparallel coupling film 21b. ing. As shown in FIG. 10, in the first magnetoresistance effect element GMR1 included in the magnetic sensor 10 'according to the second embodiment, the direction of the measured magnetic field is opposite to the direction of the measured magnetic field in the width direction of the long pattern SP (FIG. 8) The magnetization is fixed in the direction from top to bottom (in FIG. 10, from left to right).
反強磁性層２４を製膜する際に、長尺パターンＳＰの長手方向の一方（図８では左から右への向き、図１０では紙面手前から奥への向き）の成分と、長尺パターンＳＰの幅方向で被測定磁界の向きと反対向き（図８では上から下への向き、図１０では左から右への向き）の成分とを有する磁場が印加される。この磁場中製膜に基づき、製膜された反強磁性層２４から軟磁性自由層（フリー層）２３に対して、長尺パターンＳＰの長手方向の一方（図８では左から右への向き、図１０では紙面手前から奥への向き）の成分と長尺パターンＳＰの幅方向で被測定磁界の向きと反対向き（図８では上から下への向き、図１０では左から右への向き）の成分とを有する交換結合磁界が印加される。 When forming the antiferromagnetic layer 24, a component of one of the long patterns SP (direction from left to right in FIG. 8; direction from front to back in FIG. 10 in FIG. 10) and a long pattern A magnetic field is applied which has a component in the direction opposite to the direction of the magnetic field to be measured (direction from top to bottom in FIG. 8; direction from left to right in FIG. 10) in the width direction of the SP. From the formed antiferromagnetic layer 24 to the soft magnetic free layer (free layer) 23 based on film formation in this magnetic field, one of the longitudinal directions of the long pattern SP (in FIG. 8, the direction from left to right) In FIG. 10, the component in the direction from the front to the back of the drawing sheet and the direction of the magnetic field to be measured in the width direction of the long pattern SP (in FIG. 8, from top to bottom, in FIG. 10 from left to right). Exchange coupling magnetic field is applied.
その結果、第２実施形態に係る磁気センサ１０’が備える第１の磁気抵抗効果素子ＧＭＲ１では、軟磁性自由層（フリー層）２３の初期磁化は、長尺パターンＳＰの長手方向の一方の向き（図８では左から右への向き、図１０では紙面手前から奥への向き）の第１成分と、長尺パターンＳＰの幅方向で被測定磁界の向きと反対向き（図８では上から下への向き、図１０では左から右への向き）の第２成分とのベクトル和からなる。それゆえ、図８に示されるように、軟磁性自由層（フリー層）２３の初期磁化は、長尺パターンＳＰの長手方向の一方の向きから、被測定磁界の向きと反対向きに傾いた状態となる。 As a result, in the first magnetoresistance effect element GMR1 included in the magnetic sensor 10 'according to the second embodiment, the initial magnetization of the soft magnetic free layer (free layer) 23 is one direction of the long pattern SP in the longitudinal direction The first component of (the direction from left to right in FIG. 8 and the direction from the front to the back in FIG. 10) and the direction opposite to the direction of the magnetic field to be measured in the width direction of long pattern SP (in FIG. 8 from above) It is composed of the vector sum with the second component of the downward direction (the direction from left to right in FIG. 10). Therefore, as shown in FIG. 8, the initial magnetization of the soft magnetic free layer (free layer) 23 is inclined in the direction opposite to the direction of the magnetic field to be measured from one longitudinal direction of the long pattern SP. It becomes.
第２の磁気抵抗効果素子ＧＭＲ２の強磁性固定層は、第１の磁気抵抗効果素子ＧＭＲ１の強磁性固定層と同様に長尺パターンＳＰの幅方向に沿っているが第１の磁気抵抗効果素子ＧＭＲ１の強磁性固定層とは反対向きに磁化されている。 The ferromagnetic pinned layer of the second magnetoresistance effect element GMR2 is along the width direction of the long pattern SP similarly to the ferromagnetic pinned layer of the first magnetoresistance effect element GMR1, but the first magnetoresistance effect element It is magnetized in the opposite direction to the ferromagnetic fixed layer of GMR1.
第２の磁気抵抗効果素子ＧＭＲ２の軟磁性自由層（フリー層）は、磁場中製膜された段階では、第１の磁気抵抗効果素子ＧＭＲ１の軟磁性自由層（フリー層）と同様に長尺パターンＳＰの長手方向に沿っているが第１の磁気抵抗効果素子ＧＭＲ１の軟磁性自由層（フリー層）とは反対向きに磁化されている。第２の磁気抵抗効果素子ＧＭＲ２の反強磁性層は、第１の磁気抵抗効果素子ＧＭＲ１の反強磁性層と同様に、長尺パターンＳＰの幅方向で被測定磁界の向きとは反対向きに磁化されている。これらの製膜時の磁化および反強磁性層との交換結合磁界により、第２の磁気抵抗効果素子ＧＭＲ２の軟磁性自由層の初期磁化は、第１の磁気抵抗効果素子ＧＭＲ１の軟磁性自由層の初期磁化と対比して、第１成分の大きさは等しいがその向きは反対向きであり、第２成分は大きさおよび向きが等しい。 The soft magnetic free layer (free layer) of the second magnetoresistance effect element GMR2 is elongated in the same manner as the soft magnetic free layer (free layer) of the first magnetoresistance effect element GMR1 at the stage of film formation in a magnetic field. It is magnetized along the longitudinal direction of the pattern SP but in the opposite direction to the soft magnetic free layer (free layer) of the first magnetoresistance effect element GMR1. The antiferromagnetic layer of the second magnetoresistance effect element GMR2 is the same as the antiferromagnetic layer of the first magnetoresistance effect element GMR1 in the direction opposite to the direction of the magnetic field to be measured in the width direction of the long pattern SP. It is magnetized. The initial magnetization of the soft magnetic free layer of the second magnetoresistance effect element GMR2 is the soft magnetic free layer of the first magnetoresistance effect element GMR1 due to the magnetization at the time of film formation and the exchange coupling magnetic field with the antiferromagnetic layer. In contrast to the initial magnetization of, the magnitude of the first component is equal but the direction is opposite, and the second component is equal in size and orientation.
磁気検出ブリッジ回路１１’がこのような２種の磁気抵抗効果素子（第１の磁気抵抗効果素子ＧＭＲ１、第２の磁気抵抗効果素子ＧＭＲ２）を備えることにより、磁気センサ１０’の出力の被測定磁界（印加磁場）に対する応答性プロファイルは、図１１に示されるように、印加磁場が０ｍＴから４ｍＴの範囲で線形的な応答を示すものとなる。図１１中、太線となっている部分が線形応答を示す領域である。すなわち、第２実施形態に係る磁気センサ１０’の２つの出力間の電位差（中点電位差）の被測定磁界に対する応答プロファイルは、２つの出力間の電位差（中点電位差）が被測定磁界に対して線形応答する線形領域を備え、この線形領域は、被測定磁界が印加されていない場合（印加磁場が０ｍＴの場合）に対して非対称に位置する。 When the magnetic detection bridge circuit 11 'includes such two types of magnetoresistance effect elements (the first magnetoresistance effect element GMR1 and the second magnetoresistance effect element GMR2), the output of the magnetic sensor 10' is measured. The response profile to the magnetic field (applied magnetic field) exhibits a linear response in the range of 0 mT to 4 mT as shown in FIG. In FIG. 11, a bold line indicates a linear response. That is, in the response profile to the measured magnetic field of the potential difference (middle point potential difference) between the two outputs of the magnetic sensor 10 'according to the second embodiment, the potential difference between the two outputs (mid point potential difference) And a linear region that responds linearly, and this linear region is located asymmetrically with respect to the case where the magnetic field to be measured is not applied (when the applied magnetic field is 0 mT).
第２実施形態に係る磁気センサ１０’はこのような応答性プロファイルを有するため、一方の向きにのみ数値変動する被測定対象磁界の広い範囲において線形応答することができる。なお、図１１に示される応答プロファイルを与える磁気センサ１０’は、第１実施形態に係る磁気センサ１０と同様に、出力値調整のための制御ＩＣを備える。 Since the magnetic sensor 10 'according to the second embodiment has such a response profile, it can respond linearly in a wide range of the magnetic field to be measured which numerically fluctuates in only one direction. In addition, magnetic sensor 10 'which gives the response profile shown by FIG. 11 is equipped with control IC for output value adjustment similarly to the magnetic sensor 10 which concerns on 1st Embodiment.
図１２は、第２実施形態に係る磁気センサ１０’の磁界検出ブリッジ回路１１’が備える２種類の磁気抵抗効果素子（第１の磁気抵抗効果素子ＧＭＲ１、第２の磁気抵抗効果素子ＧＭＲ２）の抵抗の印加磁場応答性を示すグラフである。図１２に示されるように、第１の磁気抵抗効果素子ＧＭＲ１は、被測定磁界（印加磁場）の増大に伴って抵抗値が増大し、第２の磁気抵抗効果素子ＧＭＲ２は、被測定磁界（印加磁場）の増大に伴って抵抗値が減少する。第１の磁気抵抗効果素子ＧＭＲ１および第２の磁気抵抗効果素子ＧＭＲ２はいずれも、軟磁性自由層（フリー層）の初期磁化が長尺パターンＳＰの幅方向に沿った第２成分を有していることから、印加磁場が０ｍＴの場合における抵抗値が異なり、印加磁場がおよそ２ｍＴ程度で双方の抵抗値が一致する。このように、第２実施形態に係る磁気センサ１０’が備える２種の磁気抵抗効果素子は、抵抗変化率特性は共通するが、被測定磁界（印加磁場）の向きと軟磁性自由層（フリー層）の初期磁化の向きとの関係が異なるため、被測定磁界（印加磁場）が０ｍＴ以外の状態で交差点を持つ応答性を有する。 FIG. 12 shows two types of magnetoresistance effect elements (a first magnetoresistance effect element GMR1 and a second magnetoresistance effect element GMR2) included in the magnetic field detection bridge circuit 11 ′ of the magnetic sensor 10 ′ according to the second embodiment. It is a graph which shows the applied magnetic field responsiveness of resistance. As shown in FIG. 12, the resistance value of the first magnetoresistance effect element GMR1 increases with the increase of the measured magnetic field (applied magnetic field), and the second magnetoresistance effect element GMR2 generates the measured magnetic field ( The resistance decreases as the applied magnetic field increases. In each of the first magnetoresistive element GMR1 and the second magnetoresistive element GMR2, the initial magnetization of the soft magnetic free layer (free layer) has a second component along the width direction of the long pattern SP. Therefore, when the applied magnetic field is 0 mT, the resistances are different. When the applied magnetic field is about 2 mT, the two resistances match. As described above, although the two magnetoresistance effect elements included in the magnetic sensor 10 'according to the second embodiment have the same rate of resistance change characteristic, the direction of the measured magnetic field (applied magnetic field) and the soft magnetic free layer (free Since the relationship with the direction of the initial magnetization of layer (layer) is different, the measured magnetic field (applied magnetic field) has responsiveness with an intersection in a state other than 0 mT.
図１３は、本発明の実施形態の別の一つ（第３実施形態）に係る磁気センサの構造を概念的に示す平面図である。 FIG. 13 is a plan view conceptually showing the structure of a magnetic sensor according to another embodiment (third embodiment) of the present invention.
第３実施形態に係る磁気センサ１０”は、外部磁界の変化に応じて抵抗値が変化する４つの磁気抵抗効果素子で構成され、２つの磁気抵抗効果素子間の出力を２つ備える磁界検出ブリッジ回路１１”を有する。具体的には、４つの磁気抵抗効果素子はいずれも抵抗変化率特性が等しく、２種類の磁気抵抗効果素子（第１の磁気抵抗効果素子ＧＭＲ１，第２の磁気抵抗効果素子ＧＭＲ２）から構成される。 The magnetic sensor 10 ′ ′ according to the third embodiment includes four magnetoresistive elements whose resistance value changes in accordance with a change in an external magnetic field, and a magnetic field detection bridge including two outputs between two magnetoresistive elements. It has a circuit 11 ′ ′. Specifically, all of the four magnetoresistance effect elements have the same rate of resistance change characteristics, and are constituted by two types of magnetoresistance effect elements (first magnetoresistance effect element GMR1, second magnetoresistance effect element GMR2). Ru.
磁界検出ブリッジ回路１１”の構成・配置は、第１実施形態に係る磁気センサ１０の磁界検出ブリッジ回路１１の構成・配置と共通するので、説明を省略する。 The configuration and arrangement of the magnetic field detection bridge circuit 11 ′ ′ are the same as the configuration and arrangement of the magnetic field detection bridge circuit 11 of the magnetic sensor 10 according to the first embodiment, so the description will be omitted.
第１実施形態に係る磁気センサ１０は、軟磁性自由層（フリー層）の初期磁化の第２成分を与える磁場として、コイル１２を備えているが、第３実施形態に係る磁気センサ１０”は、後述するように、軟磁性自由層（フリー層）の初期磁化の第２成分を与える磁場として層間結合磁界を用いるため、第３実施形態に係る磁気センサ１０”は第２成分を与えるためのコイルを備えない。 The magnetic sensor 10 according to the first embodiment includes the coil 12 as a magnetic field that provides the second component of the initial magnetization of the soft magnetic free layer (free layer), but the magnetic sensor 10 ′ ′ according to the third embodiment As described later, since the interlayer coupling magnetic field is used as a magnetic field for giving the second component of the initial magnetization of the soft magnetic free layer (free layer), the magnetic sensor 10 ′ ′ according to the third embodiment provides the second component. Do not have a coil.
図１４は、第３実施形態に係る磁気センサ１０”が備える第１の磁気抵抗効果素子ＧＭＲ１の構造および磁化の状態を概念的に示す平面図である。第１の磁気抵抗効果素子ＧＭＲ１は、図１４に示すように、その長手方向が互いに平行になるように配置された複数の帯状の長尺パターン（ストライプ）ＳＰが折り返してなる形状（ミアンダ形状）を有する。複数の長尺パターンＳＰは、両端部で電極ＥＬにより直列に連結される。このミアンダ形状において、感度軸方向（Ｐｉｎ方向）は、長尺パターンＳＰの長手方向（ストライプ長手方向）に対して直交する幅方向（ストライプ幅方向）である。このミアンダ形状においては、被測定磁界となる外部からの磁界が長尺パターンＳＰの幅方向（ストライプ幅方向）に沿うように印加される。 FIG. 14 is a plan view conceptually showing the structure and the state of magnetization of the first magnetoresistive element GMR1 included in the magnetic sensor 10 ′ ′ according to the third embodiment. The first magnetoresistive element GMR1 is As shown in Fig. 14, it has a shape (meander shape) in which a plurality of strip-like long patterns (stripes) SP arranged so that their longitudinal directions are parallel to one another are folded back. In the meander shape, the sensitivity axis direction (Pin direction) is a width direction (stripe width direction) orthogonal to the longitudinal direction (stripe longitudinal direction) of the long pattern SP. In this meander shape, an external magnetic field to be a measured magnetic field is applied along the width direction (stripe width direction) of the long pattern SP.
第３実施形態に係る磁気センサが備える第１の磁気抵抗効果素子ＧＭＲ１の長尺パターンＳＰは、ＲＫＫＹ相互作用に基づくセルフピン止め型の強磁性固定層と、非磁性中間層と、軟磁性自由層と、反強磁性層とを有する。具体的には、図１６に示されるように、長尺パターンＳＰは、シード層２０、第１の強磁性膜２１ａと反平行結合膜２１ｂと第２の強磁性膜２１ｃとからなるセルフピン止め型の強磁性固定層２１、非磁性中間層２２、軟磁性自由層（フリー磁性層）２３、反強磁性層２４および保護層２５を含む積層構造を基板２９上に有する。それぞれの層や膜を構成する材料は第１実施形態に係る磁気センサ１０の場合と同様であるから説明を省略する。 The long pattern SP of the first magnetoresistance effect element GMR1 included in the magnetic sensor according to the third embodiment includes a self-pinned ferromagnetic pinned layer based on RKKY interaction, a nonmagnetic intermediate layer, and a soft magnetic free layer And an antiferromagnetic layer. Specifically, as shown in FIG. 16, the long pattern SP is a self-pinned type including the seed layer 20, the first ferromagnetic film 21a, the antiparallel coupling film 21b, and the second ferromagnetic film 21c. And a nonmagnetic intermediate layer 22, a soft magnetic free layer (free magnetic layer) 23, an antiferromagnetic layer 24 and a protective layer 25 on the substrate 29. Since the material which comprises each layer and film is the same as that of the case of the magnetic sensor 10 which concerns on 1st Embodiment, description is abbreviate | omitted.
強磁性固定層２１は、反平行結合膜２１ｂを介して配置される第１の強磁性膜２１ａと第２の強磁性膜２１ｃとがＲＫＫＹ相互作用することにより、一方の向きに磁化が固定されている。図１４に示されるように、第３実施形態に係る磁気センサ１０”が備える第１の磁気抵抗効果素子ＧＭＲ１では、長尺パターンＳＰの幅方向で被測定磁界の向きと反対向き（図１４では上から下への向き、図１６では左から右への向き）に磁化が固定されている。 In the ferromagnetic fixed layer 21, the magnetization is fixed in one direction by the RKKY interaction between the first ferromagnetic film 21a and the second ferromagnetic film 21c disposed via the antiparallel coupling film 21b. ing. As shown in FIG. 14, in the first magnetoresistance effect element GMR1 included in the magnetic sensor 10 ′ ′ according to the third embodiment, the direction opposite to the direction of the magnetic field to be measured in the width direction of the long pattern SP (FIG. 14 The magnetization is fixed in the direction from top to bottom (in the direction from left to right in FIG. 16).
非磁性中間層２２の厚さは、通常、第２の強磁性膜２１ｃと軟磁性自由層（フリー層）２３との間に層間結合磁界が生じにくくなるように設定されるが、第３実施形態に係る磁気センサ１０”では、第２の強磁性膜２１ｃから軟磁性自由層（フリー層）２３に適度な層間結合磁界が印加されるように非磁性中間層２２の厚さを調整する。層間結合磁界の大きさや向きは、非磁性中間層２２の厚さによって調整することができる。図１９は、層間結合磁界（Ｈｉｎ）とＣｕからなる非磁性中間層の厚さ（Ｃｕ膜厚）との関係の一例を示すグラフである。この例では、層間結合磁界（Ｈｉｎ）が０Ｏｅとなる点を２つ有する凹型のプロファイルとなっている。したがって、非磁性中間層の厚さ（Ｃｕ膜厚）を変化させることによって層間結合磁界（Ｈｉｎ）の大きさや向きを制御することが可能であることが、図１９から理解される。また図１９において、層間結合磁界（Ｈｉｎ）の符号がプラスの場合、軟磁性自由層（フリー層）２３には、強磁性膜２１ｃの磁化の向きと等しい向きの磁界が印加されると定義される。第３実施形態に係る磁気センサ１０”が備える第１の磁気抵抗効果素子ＧＭＲ１では、軟磁性自由層（フリー層）２３は、製膜後の段階において、長尺パターンＳＰの幅方向で被測定磁界の向きと反対向き（図１４では上から下への向き、図１６では左から右への向き）に磁化されている。 The thickness of the nonmagnetic intermediate layer 22 is usually set so that an interlayer coupling magnetic field is less likely to be generated between the second ferromagnetic film 21c and the soft magnetic free layer (free layer) 23. In the magnetic sensor 10 ′ ′ according to the embodiment, the thickness of the nonmagnetic intermediate layer 22 is adjusted so that an appropriate interlayer coupling magnetic field is applied from the second ferromagnetic film 21 c to the soft magnetic free layer (free layer) 23. The magnitude and direction of the interlayer coupling magnetic field can be adjusted by the thickness of the nonmagnetic interlayer 22. Fig. 19 shows the thickness (Cu film thickness) of the nonmagnetic interlayer comprising the interlayer coupling magnetic field (Hin) and Cu. In this example, it is a concave profile having two points at which the interlayer coupling magnetic field (Hin) becomes 0 Oe. Therefore, the thickness of the nonmagnetic intermediate layer (Cu film) Interlayer coupling magnetic field by changing It is understood from Fig. 19 that it is possible to control the size and the orientation of Hin), and in Fig. 19, when the sign of the interlayer coupling magnetic field (Hin) is plus, the soft magnetic free layer (free layer) A magnetic field having the same direction as that of the magnetization of the ferromagnetic film 21c is defined as 23 in the first magnetic resistance element GMR1 included in the magnetic sensor 10 '' according to the third embodiment. The free layer (free layer) 23 has a direction opposite to the direction of the magnetic field to be measured in the width direction of the long pattern SP at the stage after film formation (the direction from top to bottom in FIG. 14; from left to right in FIG. 16). Direction) is magnetized.
一方、反強磁性層２４は磁場中製膜により、長尺パターンＳＰの長手方向の一方（図１４では左から右への向き、図１６では紙面手前から奥への向き）に磁化される。このため、反強磁性層２４はこれに接する軟磁性自由層（フリー層）２３と交換結合し、軟磁性自由層（フリー層）２３には、反強磁性層２４の磁化に揃うような交換結合磁界が生じる。 On the other hand, the antiferromagnetic layer 24 is magnetized in one of the longitudinal directions of the long pattern SP (direction from left to right in FIG. 14; direction from front to back in FIG. 16) by film formation in a magnetic field. Therefore, the antiferromagnetic layer 24 is exchange-coupled to the soft magnetic free layer (free layer) 23 in contact with the antiferromagnetic layer 24, and the soft magnetic free layer (free layer) 23 exchanges the same as the magnetization of the antiferromagnetic layer 24. A coupled magnetic field is generated.
その結果、第３実施形態に係る磁気センサ１０”が備える第１の磁気抵抗効果素子ＧＭＲ１では、軟磁性自由層（フリー層）２３の初期磁化は、長尺パターンＳＰの長手方向の一方（図１４では左から右への向き、図１６では紙面手前から奥への向き）であって交換結合磁界からなる第１成分と、長尺パターンＳＰの幅方向で被測定磁界の向きと反対向き（図１４では上から下への向き、図１６では左から右への向き）であって層間結合磁界からなる第２成分とのベクトル和からなる。それゆえ、図１４に示されるように、軟磁性自由層（フリー層）２３の初期磁化は、長尺パターンＳＰの長手方向の一方の向きから、被測定磁界の向きと反対向きに傾いた状態となる。 As a result, in the first magnetoresistance effect element GMR1 included in the magnetic sensor 10 '' according to the third embodiment, the initial magnetization of the soft magnetic free layer (free layer) 23 is one in the longitudinal direction of the long pattern SP (see FIG. The direction from the left to the right at 14 and from the front to the back in FIG. 16) is the first component consisting of the exchange coupling magnetic field and the direction opposite to the direction of the magnetic field to be measured in the width direction of the long pattern SP It consists of the vector sum with the second component, which is from top to bottom in Fig. 14 and from left to right in Fig. 16) and consists of the interlayer coupling magnetic field. The initial magnetization of the magnetic free layer (free layer) 23 is inclined from one direction in the longitudinal direction of the long pattern SP in the direction opposite to the direction of the magnetic field to be measured.
第２の磁気抵抗効果素子ＧＭＲ２の強磁性固定層は、第１の磁気抵抗効果素子ＧＭＲ１の強磁性固定層と同様に長尺パターンＳＰの幅方向に沿っているが第１の磁気抵抗効果素子ＧＭＲ１の強磁性固定層とは反対向きに磁化されている。 The ferromagnetic pinned layer of the second magnetoresistance effect element GMR2 is along the width direction of the long pattern SP similarly to the ferromagnetic pinned layer of the first magnetoresistance effect element GMR1, but the first magnetoresistance effect element It is magnetized in the opposite direction to the ferromagnetic fixed layer of GMR1.
第２の磁気抵抗効果素子ＧＭＲ２の軟磁性自由層（フリー層）は、製膜された段階では、第１の磁気抵抗効果素子ＧＭＲ１の軟磁性自由層（フリー層）との層間結合磁界により、第１の磁気抵抗効果素子ＧＭＲ１の軟磁性自由層（フリー層）と同じく、長尺パターンＳＰの幅方向であって被測定磁界の向きと反対向きに磁化されている。なお、この向きは強磁性固定層（第２の強磁性膜）の磁化の向きとは反対向きであるが、非磁性中間層の厚さを適切に設定して層間結合磁界を制御することにより、第１の磁気抵抗効果素子ＧＭＲ１の軟磁性自由層（フリー層）の第２成分と大きさおよび向きを揃えることは可能である（図１９参照。）。 When the soft magnetic free layer (free layer) of the second magnetoresistance effect element GMR2 is deposited, an interlayer coupling magnetic field with the soft magnetic free layer (free layer) of the first magnetoresistance effect element GMR1 is used. Similar to the soft magnetic free layer (free layer) of the first magnetoresistance effect element GMR1, magnetization is performed in the width direction of the long pattern SP and in the opposite direction to the direction of the magnetic field to be measured. Although this direction is opposite to the magnetization direction of the ferromagnetic pinned layer (second ferromagnetic film), the thickness of the nonmagnetic intermediate layer is appropriately set to control the interlayer coupling magnetic field. It is possible to make the size and direction of the second component of the soft magnetic free layer (free layer) of the first magnetoresistance effect element GMR1 uniform (see FIG. 19).
第２の磁気抵抗効果素子ＧＭＲ２の反強磁性層は、第１の磁気抵抗効果素子ＧＭＲ１の反強磁性層とは反対向きに磁化されている。これらの強磁性固定層との層間結合磁界および反強磁性層との交換結合磁界により、第２の磁気抵抗効果素子ＧＭＲ２の軟磁性自由層の初期磁化は、第１の磁気抵抗効果素子ＧＭＲ１の軟磁性自由層の初期磁化と対比して、第１成分の大きさは等しいがその向きは反対向きであり、第２成分は大きさおよび向きが等しい。 The antiferromagnetic layer of the second magnetoresistance effect element GMR2 is magnetized in the opposite direction to the antiferromagnetic layer of the first magnetoresistance effect element GMR1. The initial magnetization of the soft magnetic free layer of the second magnetoresistance effect element GMR2 is determined by the first magnetoresistance effect element GMR1 due to the interlayer coupling magnetic field with these ferromagnetic fixed layers and the exchange coupling magnetic field with the antiferromagnetic layer. In contrast to the initial magnetization of the soft magnetic free layer, the magnitude of the first component is equal but the direction is opposite, and the second component is equal in magnitude and direction.
磁気検出ブリッジ回路１１”がこのような２種の磁気抵抗効果素子（第１の磁気抵抗効果素子ＧＭＲ１、第２の磁気抵抗効果素子ＧＭＲ２）を備えることにより、磁気センサ１０”の出力の被測定磁界の大きさ（印加磁場）への応答性プロファイルは、図１７に示されるように、印加磁場が０ｍＴから４ｍＴの範囲で線形的な応答を示すものとなる。図１７中、太線となっている部分が線形応答を示す領域である。すなわち、第３実施形態に係る磁気センサ１０”の２つの出力間の電位差（中点電位差）の被測定磁界に対する応答プロファイルは、２つの出力間の電位差（中点電位差）が被測定磁界に対して線形応答する線形領域を備え、この線形領域は、被測定磁界が印加されていない場合（印加磁場が０ｍＴの場合）に対して非対称に位置する。 When the magnetic detection bridge circuit 11 ′ ′ includes such two magnetoresistive elements (a first magnetoresistive element GMR1 and a second magnetoresistive element GMR2), the output of the magnetic sensor 10 ′ ′ is measured. The responsiveness profile to the magnitude of the magnetic field (applied magnetic field) exhibits a linear response in the range of 0 mT to 4 mT as shown in FIG. In FIG. 17, the bold lines indicate the linear response. That is, in the response profile to the measured magnetic field of the potential difference (mid-point potential difference) between the two outputs of the magnetic sensor 10 ′ ′ according to the third embodiment, the potential difference between the two outputs (mid-point potential difference) And a linear region that responds linearly, and this linear region is located asymmetrically with respect to the case where the magnetic field to be measured is not applied (when the applied magnetic field is 0 mT).
第３実施形態に係る磁気センサ１０”はこのような応答性プロファイルを有するため、一方にのみ数値変動する被測定対象磁界の広い範囲において線形応答することができる。なお、図１７に示される応答プロファイルを与える磁気センサ１０”は、第１実施形態に係る磁気センサ１０と同様に、出力値調整のための制御ＩＣを備える。 Since the magnetic sensor 10 ′ ′ according to the third embodiment has such a response profile, it can respond linearly in a wide range of the magnetic field to be measured, which numerically fluctuates on one side only. The response shown in FIG. Similar to the magnetic sensor 10 according to the first embodiment, the magnetic sensor 10 '' for providing a profile includes a control IC for adjusting the output value.
図１８は、第３実施形態に係る磁気センサ１０”の磁界検出ブリッジ回路１１”が備える２種類の磁気抵抗効果素子（第１の磁気抵抗効果素子ＧＭＲ１、第２の磁気抵抗効果素子ＧＭＲ２）の抵抗の印加磁場応答性を示すグラフである。図１８に示されるように、第１の磁気抵抗効果素子ＧＭＲ１は、被測定磁界（印加磁場）の増大に伴って抵抗値が増大し、第２の磁気抵抗効果素子ＧＭＲ２は、被測定磁界（印加磁場）の増大に伴って抵抗値が減少する。第１の磁気抵抗効果素子ＧＭＲ１および第２の磁気抵抗効果素子ＧＭＲ２はいずれも、軟磁性自由層（フリー層）の初期磁化が長尺パターンＳＰの幅方向に沿った第２成分を有していることから、印加磁場が０ｍＴの場合における抵抗値が異なり、印加磁場がおよそ２ｍＴ程度で双方の抵抗値が一致する。このように、第３実施形態に係る磁気センサ１０”が備える２種の磁気抵抗効果素子は、抵抗変化率特性は共通するが、被測定磁界（印加磁場）の向きと軟磁性自由層（フリー層）の初期磁化の向きとの関係が異なるため、被測定磁界（印加磁場）が０ｍＴ以外の状態で交差点を持つ応答性を有する。 FIG. 18 shows two types of magnetoresistance effect elements (a first magnetoresistance effect element GMR1 and a second magnetoresistance effect element GMR2) included in the magnetic field detection bridge circuit 11 ′ ′ of the magnetic sensor 10 ′ ′ according to the third embodiment. It is a graph which shows the applied magnetic field responsiveness of resistance. As shown in FIG. 18, the resistance value of the first magnetoresistance effect element GMR1 increases as the measured magnetic field (applied magnetic field) increases, and the second magnetoresistance effect element GMR2 generates the measured magnetic field ( The resistance decreases as the applied magnetic field increases. In each of the first magnetoresistive element GMR1 and the second magnetoresistive element GMR2, the initial magnetization of the soft magnetic free layer (free layer) has a second component along the width direction of the long pattern SP. Therefore, when the applied magnetic field is 0 mT, the resistances are different. When the applied magnetic field is about 2 mT, the two resistances match. As described above, although the two types of magnetoresistive elements provided in the magnetic sensor 10 ′ ′ according to the third embodiment have the same rate of resistance change characteristic, the direction of the measured magnetic field (applied magnetic field) and the soft magnetic free layer (free Since the relationship with the direction of the initial magnetization of layer (layer) is different, the measured magnetic field (applied magnetic field) has responsiveness with an intersection in a state other than 0 mT.
本発明の一実施形態に係る電流センサは、本発明の一実施形態に係る磁気センサ１０，１０’，１０”を備える。本発明の一実施形態に係る磁気センサ１０，１０’，１０”は、上記のとおり、線形応答性に優れるため、電流センサの測定精度を向上させることができる。 The current sensor according to an embodiment of the present invention comprises a magnetic sensor 10, 10 ′, 10 ′ ′ according to an embodiment of the present invention. The magnetic sensor 10, 10 ′, 10 ′ ′ according to an embodiment of the present invention is As described above, since the linear response is excellent, the measurement accuracy of the current sensor can be improved.
電流センサの具体的な方式は限定されない。例えば、本発明の一実施形態に係る磁気センサ１０，１０’，１０”が被測定配線の近傍に配置され、被測定配線を流れる電流（被測定電流）により生じた誘導磁界を、本発明の一実施形態に係る磁気センサ１０，１０’，１０”が被測定磁界として直接測定する磁気比例式電流センサであってもよい。 The specific scheme of the current sensor is not limited. For example, the magnetic sensor 10, 10 ′, 10 ′ ′ according to one embodiment of the present invention is disposed in the vicinity of the wiring to be measured, and the induction magnetic field generated by the current (current to be measured) flowing through the wiring to be measured The magnetic sensor 10, 10 ′, 10 ′ ′ according to one embodiment may be a magnetic proportional current sensor that measures directly as a measured magnetic field.
あるいは、本発明の一実施形態に係る磁気センサ１０，１０’，１０”の近傍にフィードバックコイルが配置される磁気平衡式電流センサであってもよい。この場合には、本発明の一実施形態に係る磁気センサ１０，１０’，１０”からの出力に応じてフィードバック電流の大きさを変動させることにより被測定電流からの誘導磁界を打ち消す磁界を発生させ、磁気センサ１０，１０’，１０”からの出力を被測定磁界が印加されていない状態と等しい値とし、その際のフィードバックコイルに流れる電流値に基づいて被測定電流の値を算出する。 Alternatively, it may be a magnetic balance type current sensor in which a feedback coil is disposed in the vicinity of the magnetic sensor 10, 10 ′, 10 ′ ′ according to an embodiment of the present invention. In this case, an embodiment of the present invention The magnetic sensor 10, 10 ′, 10 ′ ′ generates a magnetic field that cancels the induced magnetic field from the current to be measured by changing the magnitude of the feedback current according to the output from the magnetic sensor 10, 10 ′, 10 ′ according to The output from is made equal to the state where the magnetic field to be measured is not applied, and the value of the current to be measured is calculated based on the current value flowing through the feedback coil at that time.
以上説明した実施形態は、本発明の理解を容易にするために記載されたものであって、本発明を限定するために記載されたものではない。したがって、上記実施形態に開示された各要素は、本発明の技術的範囲に属する全ての設計変更や均等物をも含む趣旨である。例えば、磁気センサの軟磁性自由層の第１成分を与える磁界の種類と第２成分を与える磁界の種類は限定されない。反強磁性層の磁化は磁場中製膜により行われてもよいし、製膜後の磁場中アニールによって行われてもよい。磁気抵抗効果素子は、基板上に強磁性固定層、非磁性中間層および軟磁性自由層の順に積層されていてもよいし、基板上に軟磁性自由層、非磁性中間層および強磁性固定層の順に積層されていてもよい。 The embodiments described above are described to facilitate the understanding of the present invention, and are not described to limit the present invention. Therefore, each element disclosed in the above embodiment is intended to include all design changes and equivalents that fall within the technical scope of the present invention. For example, the type of magnetic field that provides the first component of the soft magnetic free layer of the magnetic sensor and the type of magnetic field that provides the second component are not limited. The magnetization of the antiferromagnetic layer may be performed by film formation in a magnetic field, or may be performed by annealing in a magnetic field after film formation. The magnetoresistive effect element may be laminated on the substrate in the order of the ferromagnetic fixed layer, the nonmagnetic intermediate layer and the soft magnetic free layer, or the soft magnetic free layer, the nonmagnetic intermediate layer and the ferromagnetic fixed layer on the substrate The layers may be stacked in the order of
以下、実施例等により本発明をさらに具体的に説明するが、本発明の範囲はこれらの実施例等に限定されるものではない。 Hereinafter, the present invention will be more specifically described by way of examples and the like, but the scope of the present invention is not limited to these examples and the like.
（実施例１）
図１に示される磁界検出ブリッジ回路およびコイルを備える磁気センサを基板上に製造した。磁界検出ブリッジ回路が備える４つの磁気抵抗効果素子は、いずれも帯状の長尺パターンを複数備えるミアンダ形状を有し、長尺パターンの積層構造は、いずれも、絶縁層を有する基板上に、下からシード層；ＮｉＦｅＣｒ（４２）／強磁性固定層［第１の強磁性膜；Ｃｏ４０Ｆｅ６０（１９）／反平行結合膜；Ｒｕ（３．６）／第２の強磁性膜；Ｃｏ９０Ｆｅ１０（２４）］／非磁性中間層；Ｃｕ（２０）／軟磁性自由層［Ｃｏ９０Ｆｅ１０（１０）／Ｎｉ８２．５Ｆｅ１７．５（５０）／Ｃｏ９０Ｆｅ１０（１０）］／反強磁性層；Ｉｒ２２Ｍｎ７８（６０）／保護層；Ｔａ（１００）の順にスパッタリングにより積層されたものであった。なお、括弧内の数値は層厚を示し単位はÅである。
Example 1
A magnetic sensor comprising a magnetic field detection bridge circuit and a coil as shown in FIG. 1 was manufactured on a substrate. Each of the four magnetoresistive elements provided in the magnetic field detection bridge circuit has a meander shape having a plurality of strip-like long patterns, and the stack structure of the long patterns is lower than that on the substrate having the insulating layer. Seed layer; NiFeCr (42) / ferromagnetic fixed layer [first ferromagnetic film; Co 40 Fe 60 (19) / antiparallel coupling film; Ru (3.6) / second ferromagnetic film; Co 90 Fe 10 (24)] / nonmagnetic interlayer; Cu (20) / soft magnetic free layer [Co 90 Fe 10 (10) / Ni 82.5 Fe 17.5 (50) / Co 90 Fe 10 (10)] / Antiferromagnetic layer; Ir 22 Mn 78 (60) / protective layer; Ta (100) stacked in this order by sputtering. The numerical values in parentheses indicate the layer thickness and the unit is Å.
コイルに通電して、４つの磁気抵抗効果素子に等しい大きさの磁界を等しい向きに印加した。 The coil was energized, and magnetic fields of equal magnitude were applied in the same direction to the four magnetoresistive elements.
４つの磁気抵抗効果素子のうち２つは、図２に示される第１の磁気抵抗効果素子ＧＭＲ１であり、図２に示されるように、強磁性固定層は長尺パターンの幅方向で被測定磁界の向きと反対向きに磁化され、反強磁性層は長尺パターンの長手方向の一方に沿った向きに磁化された。したがって、軟磁性自由層の初期磁化は、反強磁性層の磁化の向きと等しい向きに軟磁性自由層に生じた反強磁性層との交換結合磁界からなる第１成分と、コイル磁場からなる第２成分とのベクトル和となった。 Two of the four magnetoresistive elements are the first magnetoresistive element GMR1 shown in FIG. 2, and as shown in FIG. 2, the ferromagnetic pinned layer is measured in the width direction of the elongated pattern. The antiferromagnetic layer was magnetized in the direction opposite to the direction of the magnetic field, and was magnetized in one of the longitudinal directions of the elongated pattern. Therefore, the initial magnetization of the soft magnetic free layer consists of the first component consisting of the exchange coupling magnetic field with the antiferromagnetic layer generated in the soft magnetic free layer in the same direction as the magnetization direction of the antiferromagnetic layer, and the coil magnetic field It became a vector sum with the second component.
４つの磁気抵抗効果素子のうち残り２つは、図３に示される第２の磁気抵抗効果素子ＧＭＲ２であり、図３に示されるように、強磁性固定層は長尺パターンの幅方向で被測定磁界の向きと等しい向きに磁化され、反強磁性層は長尺パターンの長手方向の他方に沿った向きに磁化された。いずれの磁化も、大きさは第１の磁気抵抗効果素子ＧＭＲ１と等しくなるように設定された。したがって、軟磁性自由層の初期磁化は、反強磁性層の磁化の向きと等しい向きに軟磁性自由層に生じた反強磁性層との交換結合磁界からなる第１成分と、コイル磁場からなる第２成分とのベクトル和となった。 The remaining two of the four magnetoresistive elements are the second magnetoresistive element GMR2 shown in FIG. 3, and as shown in FIG. 3, the ferromagnetic pinned layer is covered in the width direction of the elongated pattern. The antiferromagnetic layer was magnetized in the same direction as the direction of the measurement magnetic field, and was magnetized in the other longitudinal direction of the long pattern. The magnitude of each magnetization was set to be equal to that of the first magnetoresistance effect element GMR1. Therefore, the initial magnetization of the soft magnetic free layer consists of the first component consisting of the exchange coupling magnetic field with the antiferromagnetic layer generated in the soft magnetic free layer in the same direction as the magnetization direction of the antiferromagnetic layer, and the coil magnetic field It became a vector sum with the second component.
磁界検出ブリッジ回路における２つの出力Ｏｕｔ１，Ｏｕｔ２の差（Ｏｕｔ１−Ｏｕｔ２、中間電位差）を制御ＩＣに入力して、被測定磁界が印加されていない状態での磁気センサの出力が０ｍＶとなるように調整した。 The difference between the two outputs Out1 and Out2 (Out1-Out2, intermediate potential difference) in the magnetic field detection bridge circuit is input to the control IC so that the output of the magnetic sensor becomes 0 mV in the state where the magnetic field to be measured is not applied. It was adjusted.
被測定磁界の印加強度を変化させながら、磁気センサの出力（単位：ｍＶ）を測定し、磁気センサの応答性プロファイルを得た。その結果を図２０に示す。図２０の太線に示されるように、印加磁場が０ｍＴから４ｍＴの範囲で、磁気センサの出力は印加磁場に対して線形的に応答した。 The output (unit: mV) of the magnetic sensor was measured while changing the applied intensity of the magnetic field to be measured, to obtain the response profile of the magnetic sensor. The results are shown in FIG. As shown by the thick line in FIG. 20, the output of the magnetic sensor linearly responded to the applied magnetic field when the applied magnetic field is in the range of 0 mT to 4 mT.
（実施例２）
実施例１と同様であるが、制御ＩＣを介さず、磁界検出ブリッジ回路の中間電位差を磁気センサの出力とした場合の印加磁場に対する応答性プロファイルを、図２０において細線で示した。実施例１（太線）と対比すると、印加磁場が０ｍＴの場合における出力値が０ｍＶでない点で相違するが、印加磁場が０ｍＴから４ｍＴの範囲で、磁気センサの出力は印加磁場に対して線形的に応答する点は共通した。
(Example 2)
The response profile to the applied magnetic field when the intermediate potential difference of the magnetic field detection bridge circuit is used as the output of the magnetic sensor without using the control IC but as in the first embodiment is shown by a thin line in FIG. In contrast to Example 1 (thick line), the output value is not 0 mV when the applied magnetic field is 0 mT, but the output of the magnetic sensor is linear with respect to the applied magnetic field when the applied magnetic field is in the range of 0 mT to 4 mT. It is common to respond to
（比較例１）
実施例２と同様であるが、コイルに通電せず、軟磁性自由層は第１成分のみからなるようにした。磁界検出ブリッジ回路の中間電位差からなる磁気センサの出力の印加磁場に対する応答性プロファイルを、図２１において破線で示した。図２０に示されるように、応答性プロファイルにおける線形応答領域は−２ｍＶから２ｍＶの範囲であり、被測定磁界が印加されていない場合（印加磁場が０ｍＴの場合）を中心として対称となった。
(Comparative example 1)
As in Example 2, the coil was not energized and the soft magnetic free layer consisted of only the first component. The responsiveness profile to the applied magnetic field of the output of the magnetic sensor consisting of the intermediate potential difference of the magnetic field detection bridge circuit is shown by a broken line in FIG. As shown in FIG. 20, the linear response region in the response profile is in the range of −2 mV to 2 mV, and is symmetrical about the case where the magnetic field to be measured is not applied (when the applied magnetic field is 0 mT).
（比較例２）
比較例１と同様であるが、磁気検出ブリッジ回路が備える４つの磁気抵抗効果素子の素子抵抗が均一でない場合における、磁界検出ブリッジ回路の中間電位差からなる磁気センサの出力の印加磁場に対する応答性プロファイルを、図２１において一点鎖線で示した。図２０に示されるように、応答性プロファイルにおける線形応答領域は−２ｍＶから２ｍＶの範囲であるが、被測定磁界が印加されていない場合（印加磁場が０ｍＴの場合）でも出力が０ｍＶとならず、オフセットが確認された。
(Comparative example 2)
Similar to Comparative Example 1, but the response profile to the applied magnetic field of the output of the magnetic sensor consisting of the intermediate potential difference of the magnetic field detection bridge circuit when the element resistances of the four magnetoresistive elements provided in the magnetic detection bridge circuit are not uniform. Is indicated by an alternate long and short dash line in FIG. As shown in FIG. 20, the linear response region in the responsiveness profile is in the range of -2mV to 2mV, but the output does not become 0mV even when the magnetic field to be measured is not applied (the applied magnetic field is 0mT) , Offset was confirmed.
１０，１０’，１０”・・・磁気センサ
１１，１１’，１１”・・・磁界検出ブリッジ回路
１２・・・コイル
ＧＭＲ１・・・第１の磁気抵抗効果素子
ＧＭＲ２・・・第２の磁気抵抗効果素子
Ｖｄｄ・・・電源端子
Ｏｕｔ１・・・直列に接続された第１の磁気抵抗効果素子ＧＭＲ１と第２の磁気抵抗効果素子ＧＭＲ２との間に設けられた出力
Ｏｕｔ２・・・直列に接続された第２の磁気抵抗効果素子ＧＭＲ２と第１の磁気抵抗効果素子ＧＭＲ１との間に設けられた出力
Ｇｎｄ１・・・第１の磁気抵抗効果素子ＧＭＲ１と第２の磁気抵抗効果素子ＧＭＲ２との直列接続における第２の磁気抵抗効果素子ＧＭＲ２側端部に設けられたグランド
Ｇｎｄ２・・・第２の磁気抵抗効果素子ＧＭＲ１と第１の磁気抵抗効果素子ＧＭＲ２との直列接続における第１の磁気抵抗効果素子ＧＭＲ１側端部に設けられたグランド
ＳＰ・・・長尺パターン
ＥＬ・・・電極
２０・・・シード層
２１・・・強磁性固定層
２１ａ・・・第１の強磁性膜
２１ｂ・・・反平行結合膜
２１ｃ・・・第２の強磁性膜
２２・・・非磁性中間層
２３・・・軟磁性自由層（フリー磁性層）
２４・・・反強磁性層
２５・・・保護層
２９・・・基板
10, 10 ', 10 "... Magnetic sensor 11, 11', 11" ... Magnetic field detection bridge circuit 12 ... Coil GMR1 ... First magnetoresistance effect element GMR2 ... Second magnetism Resistance effect element Vdd: power supply terminal Out1: output Out2 provided between the first magnetoresistance effect element GMR1 and the second magnetoresistance effect element GMR2 connected in series: connected in series Output Gnd1 provided between the second magnetoresistance effect element GMR2 and the first magnetoresistance effect element GMR1... Between the first magnetoresistance effect element GMR1 and the second magnetoresistance effect element GMR2 A ground Gnd 2 provided at an end portion of the second magnetoresistance effect element GMR 2 in series connection: a second series connection of the second magnetoresistance effect element GMR 1 and the first magnetoresistance effect element GMR 2 Ground SP provided on the side end of the magnetoresistive effect element GMR 1 long pattern EL electrode 20 seed layer 21 ferromagnetic fixed layer 21 a first ferromagnetic film 21b: antiparallel coupling film 21c: second ferromagnetic film 22: nonmagnetic intermediate layer 23: soft magnetic free layer (free magnetic layer)
24 ··· Antiferromagnetic layer 25 · · · protective layer 29 · · · substrate
Claims (5)
前記４つの磁気抵抗効果素子は、等しい抵抗変化率特性を有し、セルフピン止め型の強磁性固定層と、非磁性中間層と、軟磁性自由層とを有し、帯状の長尺パターンが折り返されたミアンダ形状であって、
前記出力を与える２つの磁気抵抗効果素子の強磁性固定層は、前記帯状の長尺パターンの幅方向に沿った方向であって互いに反対向きに磁化され、
前記出力を与える２つの磁気抵抗効果素子の軟磁性自由層は、被測定磁界が印加されていない状態において、前記帯状の長尺パターンの長手方向に沿った方向であって互いに反対向きの第１成分と、前記帯状の長尺パターンの幅方向に沿った一方の向きの第２成分とを有するように磁化され、
前記第１成分および前記第２成分は、前記軟磁性自由層の前記非磁性中間層に対向する側とは反対側に設けられた反強磁性層と前記軟磁性自由層との交換結合磁界に由来し、
前記第２成分の向きは、前記磁気センサの感度軸に沿い、前記被測定磁界が印加される向きに対して反対向きであることを特徴とする磁気センサ。 A magnetic sensor comprising a magnetic field detection bridge circuit comprising four magnetoresistive elements whose resistance value changes according to a change in an external magnetic field, the magnetic field detection bridge circuit having two outputs between two magnetoresistive elements,
The four magnetoresistance effect elements have the same rate of change in resistance and have a self-pinned ferromagnetic fixed layer, a nonmagnetic intermediate layer, and a soft magnetic free layer, and the strip-like elongated pattern is folded back. In the meander shape,
The ferromagnetic pinned layers of the two magnetoresistance effect elements that give the output are magnetized in the direction along the width direction of the strip-like long pattern and opposite to each other,
The soft magnetic free layers of the two magnetoresistance effect elements that provide the output have a first direction along the longitudinal direction of the strip-like elongated pattern in the opposite direction to each other in a state where the magnetic field to be measured is not applied. Magnetized so as to have a component and a second component in one direction along the width direction of the strip-like long pattern,
The first component and the second component are used for the exchange coupling magnetic field between the antiferromagnetic layer provided on the side opposite to the side facing the nonmagnetic intermediate layer of the soft magnetic free layer and the soft magnetic free layer. Derived from
The orientation of the second component along the sensitivity axis of the magnetic sensor, a magnetic sensor, wherein opposite der Rukoto to the direction in which the measured magnetic field is applied.
前記２つの出力間の電位差の前記被測定磁界に対する応答プロファイルは、前記２つの出力間の電位差が前記被測定磁界に対して線形応答する線形領域を備え、前記線形領域は、前記被測定磁界が印加されていない場合に対して非対称に位置する、請求項１に記載の磁気センサ。 In the four magnetoresistive elements, the magnitudes of the second components in the magnetization of the soft magnetic free layer are equal.
The response profile of the potential difference between the two outputs to the measured magnetic field comprises a linear region in which the potential difference between the two outputs linearly responds to the measured magnetic field, the linear region being the measured magnetic field The magnetic sensor according to claim 1, wherein the magnetic sensor is located asymmetrically with respect to the case where it is not applied.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2015205633A JP6529885B2 (en) | 2015-10-19 | 2015-10-19 | Magnetic sensor, method of measuring magnetic field, current sensor, and method of measuring current |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2015205633A JP6529885B2 (en) | 2015-10-19 | 2015-10-19 | Magnetic sensor, method of measuring magnetic field, current sensor, and method of measuring current |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2017078594A JP2017078594A (en) | 2017-04-27 |
| JP6529885B2 true JP6529885B2 (en) | 2019-06-12 |
Family
ID=58666961
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2015205633A Active JP6529885B2 (en) | 2015-10-19 | 2015-10-19 | Magnetic sensor, method of measuring magnetic field, current sensor, and method of measuring current |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP6529885B2 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107037382B (en) * | 2017-04-05 | 2023-05-30 | 江苏多维科技有限公司 | Pre-modulation magneto-resistance sensor |
| JP7298569B2 (en) * | 2020-08-27 | 2023-06-27 | Tdk株式会社 | Magnetic sensor, position detector and current sensor using magnetic sensor |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004022614A (en) * | 2002-06-13 | 2004-01-22 | Alps Electric Co Ltd | Magnetic sensor element and method of manufacturing the same |
| US6949927B2 (en) * | 2001-08-27 | 2005-09-27 | International Rectifier Corporation | Magnetoresistive magnetic field sensors and motor control devices using same |
| JP4573736B2 (en) * | 2005-08-31 | 2010-11-04 | 三菱電機株式会社 | Magnetic field detector |
| JP2009250931A (en) * | 2008-04-10 | 2009-10-29 | Rohm Co Ltd | Magnetic sensor, operation method thereof, and magnetic sensor system |
| WO2011111493A1 (en) * | 2010-03-12 | 2011-09-15 | アルプス・グリーンデバイス株式会社 | Current sensor |
| JP2014063893A (en) * | 2012-09-21 | 2014-04-10 | Alps Green Devices Co Ltd | Magnetic sensor, manufacturing method of magnetic sensor |
| JP2015125019A (en) * | 2013-12-25 | 2015-07-06 | 株式会社東芝 | Current sensor, current measuring module, and smart meter |
-
2015
- 2015-10-19 JP JP2015205633A patent/JP6529885B2/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| JP2017078594A (en) | 2017-04-27 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP6130775B2 (en) | Current sensor | |
| JP5572208B2 (en) | Magnetic sensor and magnetic balance type current sensor using the same | |
| JP6842741B2 (en) | Magnetic sensor | |
| WO2012090631A1 (en) | Electromagnetic proportional current sensor | |
| JPWO2015146593A1 (en) | Magnetic sensor, magnetic sensor manufacturing method, and current sensor | |
| WO2011111536A1 (en) | Magnetic-balance current sensor | |
| JP2017072375A (en) | Magnetic sensor | |
| WO2012096211A1 (en) | Current sensor | |
| WO2011111537A1 (en) | Current sensor | |
| JP2020067365A (en) | Magnetic sensor | |
| JP5597305B2 (en) | Current sensor | |
| JP2013055281A (en) | Current sensor | |
| JP6529885B2 (en) | Magnetic sensor, method of measuring magnetic field, current sensor, and method of measuring current | |
| WO2018037634A1 (en) | Magnetic sensor and current sensor | |
| JP5540326B2 (en) | Current sensor | |
| WO2011111457A1 (en) | Magnetism sensor and magnetic-balance current sensor provided therewith | |
| JP6588371B2 (en) | Magnetic field detection apparatus and adjustment method thereof | |
| JP6522485B2 (en) | Method of manufacturing magnetic sensor | |
| WO2015125699A1 (en) | Magnetic sensor | |
| JP6506671B2 (en) | Method of manufacturing magnetic sensor and method of manufacturing current sensor | |
| JP6204391B2 (en) | Magnetic sensor and current sensor | |
| JP7261656B2 (en) | Magnetic sensor and manufacturing method thereof | |
| JP7404964B2 (en) | magnetic sensor | |
| JP2017139269A (en) | Magnetic sensor, method for manufacturing magnetic sensor, and current sensor | |
| JP2015099882A (en) | Magnetic sensor |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20171222 |
|
| A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20181019 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20181030 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20181220 |
|
| TRDD | Decision of grant or rejection written | ||
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20190507 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20190515 |
|
| R150 | Certificate of patent or registration of utility model |
Ref document number: 6529885 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |