JP2017139269A - Magnetic sensor, method for manufacturing magnetic sensor, and current sensor - Google Patents
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Abstract
Description
本発明は、磁気センサおよび当該磁気センサの製造方法、ならびに当該磁気センサを備えた電流センサに関する。 The present invention relates to a magnetic sensor, a method for manufacturing the magnetic sensor, and a current sensor including the magnetic sensor.
電気自動車やハイブリッドカーにおけるモータ駆動技術などの分野では、比較的大きな電流が取り扱われるため、大電流を非接触で測定することが可能な電流センサが求められている。このような電流センサとしては、被測定電流からの誘導磁界を検出する磁気センサを用いたものが知られている。磁気センサ用の磁気検出素子として、例えば、ＧＭＲ素子などの磁気抵抗効果素子が挙げられる。 In fields such as motor drive technology in electric vehicles and hybrid cars, a relatively large current is handled, and thus a current sensor capable of measuring a large current in a non-contact manner is required. As such a current sensor, a sensor using a magnetic sensor that detects an induced magnetic field from a current to be measured is known. Examples of the magnetic detection element for the magnetic sensor include a magnetoresistive effect element such as a GMR element.
ＧＭＲ素子は、固定磁性層とフリー磁性層とが非磁性材料層を介して積層された積層構造体を基本構造とする。固定磁性層は、反強磁性層と強磁性層との積層構造体による交換結合バイアスや、２つの強磁性層が非磁性中間層を介して積層されるセルフピン止め構造によるＲＫＫＹ相互作用（間接交換相互作用）により、磁化方向が一方向に固定されている。フリー磁性層は外部磁界に応じて磁化方向が変化可能とされている。 The GMR element has a basic structure of a laminated structure in which a pinned magnetic layer and a free magnetic layer are laminated via a nonmagnetic material layer. The pinned magnetic layer is composed of an exchange coupling bias by a laminated structure of an antiferromagnetic layer and a ferromagnetic layer, or an RKKY interaction (indirect exchange) by a self-pinned structure in which two ferromagnetic layers are laminated via a nonmagnetic intermediate layer. Due to the interaction, the magnetization direction is fixed in one direction. The free magnetic layer can change the magnetization direction in accordance with an external magnetic field.
ＧＭＲ素子を備えた磁気センサを用いてなる電流センサでは、被測定電流からの誘導磁界がＧＭＲ素子に印加されることにより、フリー磁性層の磁化方向が変化する。このフリー磁性層の磁化方向と、固定磁性層の磁化方向との相対角度に応じてＧＭＲ素子の電気抵抗値が変動するため、この電気抵抗値を測定することにより、フリー磁性層の磁化方向を検出することができる。そして、磁気センサにより検出された磁化方向に基づいて、誘導磁界を与えた被測定電流の大きさおよびその向きを求めることが可能である。 In a current sensor using a magnetic sensor having a GMR element, an induced magnetic field from a current to be measured is applied to the GMR element, whereby the magnetization direction of the free magnetic layer changes. Since the electrical resistance value of the GMR element varies depending on the relative angle between the magnetization direction of the free magnetic layer and the magnetization direction of the pinned magnetic layer, the magnetization direction of the free magnetic layer can be determined by measuring the electrical resistance value. Can be detected. Based on the magnetization direction detected by the magnetic sensor, it is possible to determine the magnitude and direction of the current to be measured to which the induced magnetic field is applied.
ところで、電気自動車やハイブリッドカーにおいては、モータの駆動を電流値に基づいて制御する場合があり、また、バッテリーに流れ込む電流値に応じてバッテリーの制御方法を調整する場合がある。したがって、磁気センサを用いてなる電流センサには、電流値をより正確に検出できるように、磁気センサの測定精度を高めることが求められている。 By the way, in an electric vehicle or a hybrid car, driving of a motor may be controlled based on a current value, and a battery control method may be adjusted according to a current value flowing into the battery. Therefore, a current sensor using a magnetic sensor is required to increase the measurement accuracy of the magnetic sensor so that the current value can be detected more accurately.
磁気センサの測定精度を向上させるための一手法として、特許文献１に記載されるように、磁気センサが、複数の磁気検知素子（特許文献１では磁気抵抗効果素子）からなる磁界検出ブリッジ回路を備えることが挙げられる。 As one method for improving the measurement accuracy of the magnetic sensor, as described in Patent Document 1, the magnetic sensor includes a magnetic field detection bridge circuit including a plurality of magnetic sensing elements (magnetoresistance effect elements in Patent Document 1). Preparation.
特許文献１に記載されるような磁気センサでは、磁界検出ブリッジ回路を構成する複数の磁気抵抗効果素子は、異なる向きに感度軸を有する２種類の磁気抵抗効果素子から構成される。これらの異なる種類の磁気抵抗効果素子がいずれもセルフピン止め型の固定磁性層を有する場合には、磁気センサが備える磁気抵抗効果素子の種類ごとに、異なった向きに固定磁性層は磁化されている必要がある。この固定磁性層の磁化が適切に行われることは、個々の磁気抵抗効果素子の特性を高めることにとって重要であり、結果的には磁気センサの測定精度を向上させる観点からも重要である。 In a magnetic sensor as described in Patent Document 1, the plurality of magnetoresistive elements constituting the magnetic field detection bridge circuit are composed of two types of magnetoresistive elements having sensitivity axes in different directions. When these different types of magnetoresistive elements each have a self-pinned fixed magnetic layer, the fixed magnetic layer is magnetized in different directions for each type of magnetoresistive element provided in the magnetic sensor. There is a need. Proper magnetization of the pinned magnetic layer is important for improving the characteristics of the individual magnetoresistive elements, and as a result, is also important from the viewpoint of improving the measurement accuracy of the magnetic sensor.
本発明は、セルフピン止め型の固定磁性層を有する磁気抵抗効果素子を備える磁気センサにおいて、固定磁性層の磁化を容易にする手法を提供することを目的とする。具体的には、磁気検出機能に優れる磁気センサ、およびかかる磁気センサの製造方法、ならびに上記の磁気センサを備える電流センサを提供することを目的とする。 An object of the present invention is to provide a technique for facilitating magnetization of a pinned magnetic layer in a magnetic sensor including a magnetoresistive effect element having a self-pinned pinned magnetic layer. Specifically, an object of the present invention is to provide a magnetic sensor having an excellent magnetic detection function, a method for manufacturing the magnetic sensor, and a current sensor including the magnetic sensor.
上記の課題を解決するために完成された本発明は、一態様において、特定の向きに感度軸を持つ磁気抵抗効果素子を備えた磁気センサであって、前記磁気抵抗効果素子は、固定磁性層とフリー磁性層とが非磁性材料層を介して積層された積層構造体が基板上に配置された構成を有し、前記固定磁性層は、第１磁性層と前記非磁性材料層に接する第２磁性層とが非磁性中間層を介して積層され、前記第１磁性層と前記第２磁性層とが反平行に磁化固定されたセルフピン止め型であり、前記第２磁性層は、前記非磁性中間層に接する第１強磁性材料層と、前記第１強磁性材料層の上に設けられた介在層と、前記介在層の上に設けられ前記第１強磁性材料層に磁気的に結合する第２強磁性材料層とを備えることを特徴とする磁気センサである。 In one aspect, the present invention completed to solve the above problems is a magnetic sensor including a magnetoresistive effect element having a sensitivity axis in a specific direction, wherein the magnetoresistive effect element is a fixed magnetic layer. And a free magnetic layer are stacked via a non-magnetic material layer, and the pinned magnetic layer is in contact with the first magnetic layer and the non-magnetic material layer. Two magnetic layers are stacked via a nonmagnetic intermediate layer, and the first magnetic layer and the second magnetic layer are magnetized and fixed in antiparallel, and the second magnetic layer A first ferromagnetic material layer in contact with the magnetic intermediate layer; an intermediate layer provided on the first ferromagnetic material layer; and magnetically coupled to the first ferromagnetic material layer provided on the intermediate layer. And a second ferromagnetic material layer.
セルフピン止め型の固定磁性層における非磁性材料層に近位な側の強磁性層を、介在層を備える積層構造とすることにより、この介在層を最表層とした状態であれば外部環境に寄らず安定的に固定磁性層の磁化が可能であり、ＭＲ比（［磁化が反平行な場合の抵抗値−磁化が平行な場合の抵抗値］／磁化が平行な場合の抵抗値）が高い磁気抵抗効果素子を得ることが可能である。 In the self-pinned pinned magnetic layer, the ferromagnetic layer adjacent to the nonmagnetic material layer has a laminated structure including an intervening layer. The pinned magnetic layer can be stably magnetized and has a high MR ratio ([resistance value when magnetization is antiparallel-resistance value when magnetization is parallel] / resistance value when magnetization is parallel). It is possible to obtain a resistance effect element.
セルフピン止め型の固定磁性層における非磁性材料層に近位な側の強磁性層である第２磁性層は、第１強磁性材料層、介在層および第２強磁性材料層を備える積層構造を有し、第１強磁性材料層と第２強磁性材料層とは強磁性的に結合しているため、介在層があっても、一体として機能することができる。また、介在層は酸素や窒素など大気中のガスと反応し難い材料から構成される。したがって、磁気抵抗効果素子を構成する積層構造体の一部である積層構造部は、介在層が最表層に位置する状態であれば、外気が大気中となっても酸素の影響などに起因する品質の低下は生じにくい。 The second magnetic layer, which is a ferromagnetic layer adjacent to the nonmagnetic material layer in the self-pinned pinned magnetic layer, has a laminated structure including a first ferromagnetic material layer, an intervening layer, and a second ferromagnetic material layer. Since the first ferromagnetic material layer and the second ferromagnetic material layer are ferromagnetically coupled, even if there is an intervening layer, they can function as one body. The intervening layer is made of a material that does not easily react with atmospheric gases such as oxygen and nitrogen. Therefore, the laminated structure part which is a part of the laminated structure constituting the magnetoresistive effect element is caused by the influence of oxygen or the like even if the outside air is in the atmosphere if the intervening layer is located in the outermost layer. Degradation is unlikely to occur.
前記介在層は、ＰｔおよびＰｄからなる群から選ばれる１種または２種を含有することが好ましい。介在層がこれらの元素を含有すること、好ましくはこれらの元素からなることにより、介在層より下層に位置する層の酸化などを効果的に抑制することが可能である。また、介在層を挟むように位置する第１強磁性材料層と第２強磁性材料層との強磁性結合が介在層によって阻害されにくく、結果的に第１磁性層と第２磁性層との間のＲＫＫＹ相互作用が適切に生じやすい。 The intervening layer preferably contains one or two selected from the group consisting of Pt and Pd. When the intervening layer contains these elements, and preferably consists of these elements, it is possible to effectively suppress oxidation or the like of the layer located below the intervening layer. Further, the ferromagnetic coupling between the first ferromagnetic material layer and the second ferromagnetic material layer positioned so as to sandwich the intervening layer is not easily inhibited by the intervening layer, and as a result, the first magnetic layer and the second magnetic layer RKKY interactions are likely to occur appropriately.
上記の磁気センサの具体的な構成例として、前記磁気センサは前記磁気抵抗効果素子を少なくとも２つ備え、前記少なくとも２つの前記磁気抵抗効果素子は、前記感度軸の向きが互いに異なる第１磁気抵抗効果素子および第２磁気抵抗効果素子を含み、前記第１磁気抵抗効果素子の前記積層構造体である第１積層構造体の少なくとも１つが配置される基板は、前記第２磁気抵抗効果素子の前記積層構造体である第２積層構造体の少なくとも１つが配置される基板と同一である磁気センサが挙げられる。同一の基板上に感度軸の向きが互いに異なる複数種類の磁気抵抗効果素子を設ける場合には、成膜過程において、特に真空成膜中に、これらの感度軸への向きの磁化を固定磁性層に対して強く行うことは容易でない。しかしながら、上記のように固定磁性層が介在層を備える場合には、介在層が最表層に位置する状態であれば、外部環境の影響（具体的には酸化が例示される。）を少なくして、固定磁性層の磁化を行うことができる。したがって、同一基板上に感度軸の向きが互いに異なる複数種類の磁気抵抗効果素子を磁化固定層の磁化分散を小さくした状態で設けることを容易に行うことが可能となる。このような方法で形成された感度軸の向きが互いに異なる複数種類の磁気抵抗効果素子が同一基板上に設けられた磁気センサは、個々の磁気抵抗効果素子のＭＲ比が高く、優れた磁気検出機能を有する。 As a specific configuration example of the magnetic sensor, the magnetic sensor includes at least two magnetoresistive elements, and the at least two magnetoresistive elements are first magnetoresistive elements having different sensitivity axes. A substrate including an effect element and a second magnetoresistive effect element, on which at least one of the first stacked structures, which is the stacked structure of the first magnetoresistive effect element, is disposed on the substrate of the second magnetoresistive effect element. Examples include a magnetic sensor that is the same as the substrate on which at least one of the second stacked structures, which is a stacked structure, is disposed. When a plurality of types of magnetoresistive effect elements having different sensitivity axes are provided on the same substrate, the magnetization in the direction toward these sensitivity axes is fixed in the film formation process, particularly during vacuum film formation. It is not easy to do strongly. However, when the pinned magnetic layer includes the intervening layer as described above, the influence of the external environment (specifically, oxidation is exemplified) is reduced if the intervening layer is located in the outermost layer. Thus, the pinned magnetic layer can be magnetized. Therefore, it is possible to easily provide a plurality of types of magnetoresistive effect elements having different sensitivity axes on the same substrate with the magnetization dispersion of the magnetization fixed layer being reduced. A magnetic sensor in which a plurality of types of magnetoresistive elements having different sensitivity axes formed on such a method are provided on the same substrate has a high MR ratio of the individual magnetoresistive elements and excellent magnetic detection. It has a function.
上記の構成の磁気センサのさらに具体的な構成として、２つの前記第１磁気抵抗効果素子と２つの前記第２磁気抵抗効果素子とが互いに電気的に接続されてなる磁界検出ブリッジ回路を備えるものが例示される。前記磁界検出ブリッジ回路は、前記第１磁気抵抗効果素子の１つと当該第１磁気抵抗効果素子に直列に接続される１つの前記第２磁気抵抗効果素子との間の出力を２つ有することが好ましく、これらの出力の電位差（電圧）によって外部磁界に関する情報を得ることが可能である。 As a more specific configuration of the magnetic sensor having the above-described configuration, a magnetic field detection bridge circuit in which two first magnetoresistive elements and two second magnetoresistive elements are electrically connected to each other is provided. Is exemplified. The magnetic field detection bridge circuit has two outputs between one of the first magnetoresistance effect elements and one second magnetoresistance effect element connected in series to the first magnetoresistance effect element. Preferably, information on the external magnetic field can be obtained from the potential difference (voltage) between these outputs.
本発明は、他の一態様として、上記の磁化固定層の磁化分散が小さい、且つ、感度軸の向きが互いに異なる複数種類の磁気抵抗効果素子を同一の基板上に備える構成の磁気センサの製造方法を提供する。かかる製造方法は、真空チャンバ内で、前記基板上に前記第１積層構造体を製造した後、前記第１積層構造体が配置されている前記基板上に前記第２積層構造体を製造することにより前記磁気センサは製造され、前記第１積層構造体および前記第２積層構造体のいずれについても、前記真空チャンバ内にて、前記第１磁性層、前記非磁性中間層、前記第１強磁性材料層および前記介在層を備える積層構造部を前記基板上に形成し、前記介在層が最表層に位置する状態で前記積層構造部を前記真空チャンバから取り出して、前記積層構造部が備える前記第１磁性層および前記第１強磁性材料層を十分に大きな磁場印加によって磁化し、前記第１磁性層および前記第１強磁性材料層が磁化された前記積層構造部を前記真空チャンバ内に入れて、前記第２強磁性材料層以降の形成を行う。 As another aspect of the present invention, a magnetic sensor having a configuration in which a plurality of types of magnetoresistive elements having small magnetization dispersion of the magnetization fixed layer and different directions of sensitivity axes are provided on the same substrate is provided. Provide a method. In the manufacturing method, after the first stacked structure is manufactured on the substrate in a vacuum chamber, the second stacked structure is manufactured on the substrate on which the first stacked structure is disposed. Thus, the magnetic sensor is manufactured, and the first magnetic layer, the nonmagnetic intermediate layer, and the first ferromagnetic layer are formed in the vacuum chamber for both the first laminated structure and the second laminated structure. Forming a laminated structure portion including a material layer and the intervening layer on the substrate; taking out the laminated structure portion from the vacuum chamber in a state where the intervening layer is positioned on an outermost layer; and One magnetic layer and the first ferromagnetic material layer are magnetized by applying a sufficiently large magnetic field, and the stacked structure part in which the first magnetic layer and the first ferromagnetic material layer are magnetized is placed in the vacuum chamber. ,Previous Effect formation of the second ferromagnetic material layer and later.
積層構造部を真空チャンバから取り出して着磁装置を用いて十分に大きな磁場を印加することにより、第１磁性層および第１強磁性材料層の磁化を行うことが容易となる。この場合に大気中で磁化が行われることになっても、積層構造部は大気中のガスと反応し難い介在層が最表層に位置するため、磁性材料からなる層が酸化する現象が生じにくい。このため、固定磁性層を構成する材料の物性変化などが生じにくい。また、磁化作業後に積層構造部を再度真空チャンバ内に配置して第２強磁性材料層を形成する際に、第２強磁性材料層が積層構造部に対して密着性が低下するといった不具合も生じにくい。それゆえ、かかる製造方法により製造された磁気センサは、複数種類の磁気抵抗効果素子を同一基板上に備えるというコンパクトな構成でありながら、磁化固定層の磁化分散が小さく、その結果、磁気抵抗効果素子のＭＲ比が高くなって、磁気検出機能に優れる。 By taking out the laminated structure portion from the vacuum chamber and applying a sufficiently large magnetic field using a magnetizing device, the first magnetic layer and the first ferromagnetic material layer can be easily magnetized. In this case, even if magnetization is performed in the atmosphere, the layered structure portion is located on the outermost layer, which hardly reacts with gas in the atmosphere, so that the phenomenon of oxidation of the layer made of the magnetic material is unlikely to occur. . For this reason, a change in physical properties of the material constituting the pinned magnetic layer hardly occurs. Further, when the laminated structure portion is again placed in the vacuum chamber after the magnetization operation to form the second ferromagnetic material layer, there is a problem that the adhesion of the second ferromagnetic material layer to the laminated structure portion is lowered. Hard to occur. Therefore, the magnetic sensor manufactured by such a manufacturing method has a compact configuration in which a plurality of types of magnetoresistive effect elements are provided on the same substrate, but the magnetization dispersion of the magnetization fixed layer is small. As a result, the magnetoresistive effect The MR ratio of the element is increased and the magnetic detection function is excellent.
前記第１磁性層および前記第２磁性層は、前記第１磁性層の磁化量と前記第２磁性層の磁化量とが等しくなるように設定され、前記第１磁性層および前記第１強磁性材料層の磁化は、前記第１磁性層の磁化量と前記第１強磁性材料層の磁化量とに相違がある状態で行われてもよい。 The first magnetic layer and the second magnetic layer are set so that a magnetization amount of the first magnetic layer and a magnetization amount of the second magnetic layer are equal to each other, and the first magnetic layer and the first ferromagnetic layer The magnetization of the material layer may be performed in a state where there is a difference between the magnetization amount of the first magnetic layer and the magnetization amount of the first ferromagnetic material layer.
前記第２積層構造体における前記第１磁性層および前記第１磁性材料層を磁化させるために印加される磁界強度は、前記基板上に配置されている前記１積層構造体における前記固定磁性層の磁化分散を大きくしない範囲で設定されればよい。 The magnetic field strength applied to magnetize the first magnetic layer and the first magnetic material layer in the second multilayer structure is determined by the fixed magnetic layer in the first multilayer structure disposed on the substrate. What is necessary is just to set in the range which does not enlarge magnetization dispersion | distribution.
前記第２強磁性材料層は前記第１強磁性材料層と磁気的に結合することにより磁化されることが好ましい。この磁気的結合を適切に生じさせる観点から、介在層の組成や厚さは設定されることが好ましい。 Preferably, the second ferromagnetic material layer is magnetized by being magnetically coupled to the first ferromagnetic material layer. From the viewpoint of appropriately generating this magnetic coupling, the composition and thickness of the intervening layer are preferably set.
本発明は、別の一態様において、上記の感度軸の向きが互いに異なる複数種類の磁気抵抗効果素子を同一の基板上に備える構成の磁気センサを備え、被測定電流により生じた誘導磁界を測定して被測定電流を計測する、電流センサである。 In another aspect, the present invention includes a magnetic sensor having a configuration in which a plurality of types of magnetoresistive elements having different sensitivity axes are provided on the same substrate, and measures an induced magnetic field generated by a current to be measured. The current sensor measures the current to be measured.
本発明は、また別の一態様において、上記の感度軸の向きが互いに異なる複数種類の磁気抵抗効果素子を同一の基板上に備える構成の磁気センサおよびフィードバックコイルを備え、被測定電流により生じた誘導磁界を打ち消す磁界が前記フィードバックコイルから発生するように、前記磁気センサによって測定された磁界強度に応じて前記フィードバックコイルに電流を流し、当該フィードバックコイルの電流値に基づいて前記被測定電流を計測する、電流センサである。 In another aspect, the present invention includes a magnetic sensor and a feedback coil configured to include a plurality of types of magnetoresistive effect elements having different sensitivity axis directions on the same substrate, and are generated by a current to be measured. A current is passed through the feedback coil according to the magnetic field intensity measured by the magnetic sensor so that a magnetic field that cancels the induced magnetic field is generated from the feedback coil, and the measured current is measured based on the current value of the feedback coil. A current sensor.
本発明によれば、セルフピン止め型の固定磁性層を有する磁気抵抗効果素子を備える磁気センサにおいて、固定磁性層の磁化分散を低減でき、磁気検出機能に優れる磁気センサ手法が提供される。また、本発明によれば、上記の磁気センサの製造方法、ならびに上記の磁気センサを備える電流センサも提供される。 ADVANTAGE OF THE INVENTION According to this invention, the magnetic sensor method which can reduce the magnetization dispersion | distribution of a fixed magnetic layer and is excellent in a magnetic detection function in a magnetic sensor provided with the magnetoresistive effect element which has a self-pinning type fixed magnetic layer. Moreover, according to this invention, the manufacturing method of said magnetic sensor and a current sensor provided with said magnetic sensor are also provided.
以下、本発明の実施の形態について、添付図面を参照して詳細に説明する。 Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.
図１は、本発明の一実施形態に係る磁気センサの構成を概念的に示す平面図である。 FIG. 1 is a plan view conceptually showing the structure of a magnetic sensor according to an embodiment of the present invention.
図１に示されるように、本発明の一実施形態に係る磁気センサ１０は、外部磁界の変化に応じて抵抗値が変化する４つの磁気検出部、具体的には、磁気抵抗効果素子からなる磁気測定素子を備え磁気を検出する部分、で構成される。２つの磁気検出部間の出力を２つ備える磁界検出ブリッジ回路１０Ｃを有する。具体的には、４つの磁気検出部はいずれも抵抗変化率特性が等しく、２種類の磁気検出部（第１の磁気抵抗効果素子ＧＭＲ１，第２の磁気抵抗効果素子ＧＭＲ２）から構成される。第１の磁気抵抗効果素子ＧＭＲ１と第２の磁気抵抗効果素子ＧＭＲ２とは磁気抵抗効果素子を構成する積層構造体が共通であり、その積層構造体における固定磁性層の磁化の向きが互いに反対である。 As shown in FIG. 1, a magnetic sensor 10 according to an embodiment of the present invention includes four magnetic detectors whose resistance values change according to changes in an external magnetic field, specifically, magnetoresistive elements. It comprises a part that includes a magnetic measurement element and detects magnetism. A magnetic field detection bridge circuit 10C having two outputs between two magnetic detection units is provided. Specifically, each of the four magnetic detectors has the same resistance change rate characteristic, and includes two types of magnetic detectors (first magnetoresistive element GMR1, second magnetoresistive element GMR2). The first magnetoresistive element GMR1 and the second magnetoresistive element GMR2 have a common laminated structure constituting the magnetoresistive element, and the magnetization directions of the fixed magnetic layers in the laminated structure are opposite to each other. is there.
磁気センサ１０における４つの磁気抵抗効果素子（第１の磁気抵抗効果素子ＧＭＲ１，第２の磁気抵抗効果素子ＧＭＲ２）は、同一基板上に形成されている、いわゆるワンチップ構成である。このため、磁気センサ１０を小型化することが可能である。 The four magnetoresistive elements (first magnetoresistive element GMR1 and second magnetoresistive element GMR2) in the magnetic sensor 10 have a so-called one-chip configuration formed on the same substrate. For this reason, it is possible to reduce the size of the magnetic sensor 10.
磁界検出ブリッジ回路１０Ｃは、電源給電点である電源端子Ｖｄｄに、第１の磁気抵抗効果素子ＧＭＲ１と第２の磁気抵抗効果素子ＧＭＲ２とが直列に接続された部分の第１の磁気抵抗効果素子ＧＭＲ１側端部と、第２の磁気抵抗効果素子ＧＭＲ２と第１の磁気抵抗効果素子ＧＭＲ１とが直列に接続された部分の第２の磁気抵抗効果素子ＧＭＲ２側端部とが並列で接続され、それぞれの部分における反対側の端部は、グランド（Ｇｎｄ）に接続されている。 The magnetic field detection bridge circuit 10C includes a first magnetoresistive element in a portion in which a first magnetoresistive element GMR1 and a second magnetoresistive element GMR2 are connected in series to a power supply terminal Vdd that is a power supply point. The end portion on the GMR1 side and the end portion on the second magnetoresistive effect element GMR2 side in the portion where the second magnetoresistive effect element GMR2 and the first magnetoresistive effect element GMR1 are connected in series are connected in parallel, The opposite end of each part is connected to the ground (Gnd).
直列に接続された第１の磁気抵抗効果素子ＧＭＲ１と第２の磁気抵抗効果素子ＧＭＲ２との間には一つの出力（Ｏｕｔ１）が設けられ、直列に接続された第２の磁気抵抗効果素子ＧＭＲ２と第１の磁気抵抗効果素子ＧＭＲ１との間には一つの出力（Ｏｕｔ２）が設けられる。これらの２つの出力における電位差（Ｏｕｔ１−Ｏｕｔ２、中点電位差）を増幅器Ａｍｐに入力し、増幅器Ａｍｐからの出力（差動出力）により、外部から印加された磁場（外部磁場）の大きさを定量的に測定することができる。 One output (Out1) is provided between the first magnetoresistive element GMR1 and the second magnetoresistive element GMR2 connected in series, and the second magnetoresistive element GMR2 connected in series And the first magnetoresistance effect element GMR1 are provided with one output (Out2). The potential difference (Out1-Out2, midpoint potential difference) between these two outputs is input to the amplifier Amp, and the magnitude of the magnetic field (external magnetic field) applied from the outside is quantified by the output from the amplifier Amp (differential output). Can be measured automatically.
図２は、第１実施形態に係る磁気センサ１０が備える第１の磁気抵抗効果素子ＧＭＲ１の構造を概念的に示す平面図である。第１の磁気抵抗効果素子ＧＭＲ１は、図２に示すように、その長手方向が互いに平行になるように配置された複数の長尺パターン（ストライプ）１が折り返し部２により接続された形状（ミアンダ形状）を有する。長尺パターン１は感磁体からなり、本実施形態において感磁体を構成する磁気測定素子は磁気抵抗効果素子である。長尺パターン１が折り返し部２で接続されることにより、長尺パターン１は全体が電気的に直列に接続され、両端部のそれぞれには電極２Ａが設けられている。このミアンダ形状において、感度軸方向（Ｐｉｎ方向）は、長尺パターン１の長手方向（ストライプ長手方向）に対して直交する幅方向（ストライプ幅方向）である。このミアンダ形状においては、被測定磁界となる外部磁場が長尺パターン１の幅方向（ストライプ幅方向）に沿うように印加される。 FIG. 2 is a plan view conceptually showing the structure of the first magnetoresistive element GMR1 provided in the magnetic sensor 10 according to the first embodiment. As shown in FIG. 2, the first magnetoresistive element GMR1 has a shape (meander) in which a plurality of long patterns (stripes) 1 arranged so that their longitudinal directions are parallel to each other are connected by a folded portion 2. Shape). The long pattern 1 is made of a magnetic sensitive body, and in this embodiment, the magnetic measuring element constituting the magnetic sensitive body is a magnetoresistive effect element. By connecting the long pattern 1 at the turn-back portion 2, the entire long pattern 1 is electrically connected in series, and electrodes 2A are provided at both ends. In this meander shape, the sensitivity axis direction (Pin direction) is the width direction (stripe width direction) orthogonal to the longitudinal direction of the long pattern 1 (stripe longitudinal direction). In this meander shape, an external magnetic field serving as a magnetic field to be measured is applied along the width direction (stripe width direction) of the long pattern 1.
図３は、図２に示すＩ−Ｉ線における矢視断面図である。 3 is a cross-sectional view taken along line I-I shown in FIG.
本発明の一実施形態に係る磁気センサ１０が備える第１の磁気抵抗効果素子ＧＭＲ１の長尺パターン１は感磁体が磁気抵抗効果素子からなり、ＲＫＫＹ相互作用に基づくセルフピン止め型の固定磁性層と、非磁性材料層と、フリー磁性層とを備える第１積層構造体が基板上に配置された構成を有する。具体的には、図４に示されるように、長尺パターン１は、シード層２０、第１磁性層２１ａと非磁性中間層２１ｂと第２磁性層２１ｃとからなるセルフピン止め型の固定磁性層２１、非磁性材料層２２、フリー磁性層２３および保護層２５を含む第１積層構造体が基板２９上に形成された構成を備える。磁気センサ１０が備える第２の磁気抵抗効果素子ＧＭＲ２の長尺パターンも、第１の磁気抵抗効果素子ＧＭＲ１と同様に、セルフピン止め型の固定磁性層と、非磁性中間層と、フリー磁性層とを備える第２積層構造体が基板２９上に形成された構成を備える。 The long pattern 1 of the first magnetoresistive element GMR1 provided in the magnetic sensor 10 according to the embodiment of the present invention is a self-pinned fixed magnetic layer based on the RKKY interaction. The first laminated structure including the nonmagnetic material layer and the free magnetic layer is arranged on the substrate. Specifically, as shown in FIG. 4, the long pattern 1 has a self-pinned fixed magnetic layer including a seed layer 20, a first magnetic layer 21a, a nonmagnetic intermediate layer 21b, and a second magnetic layer 21c. 21, a first laminated structure including a nonmagnetic material layer 22, a free magnetic layer 23, and a protective layer 25 is formed on a substrate 29. Similarly to the first magnetoresistance effect element GMR1, the long pattern of the second magnetoresistance effect element GMR2 included in the magnetic sensor 10 is also a self-pinned fixed magnetic layer, a nonmagnetic intermediate layer, a free magnetic layer, The 2nd laminated structure provided with is provided with the structure formed on the board | substrate 29. FIG.
シード層２０は、ＮｉＦｅＣｒあるいはＣｒなどで構成される。なお、上記積層構造において、基板２９とシード層２０との間に、例えば、Ｔａ，Ｈｆ，Ｎｂ，Ｚｒ，Ｔｉ，Ｍｏ，Ｗのうち少なくとも１つの元素などの非磁性材料で構成される下地層を設けてもよい。保護層２５は、Ｔａなどで構成される。 The seed layer 20 is made of NiFeCr or Cr. In the laminated structure, an underlayer composed of a nonmagnetic material such as at least one element of Ta, Hf, Nb, Zr, Ti, Mo, and W, for example, between the substrate 29 and the seed layer 20. May be provided. The protective layer 25 is made of Ta or the like.
固定磁性層２１は、非磁性中間層２１ｂを介して配置される第１磁性層２１ａと第２磁性層２１ｃとの間のＲＫＫＹ相互作用により、一方の向きに磁化が固定されている。 The magnetization of the pinned magnetic layer 21 is pinned in one direction by the RKKY interaction between the first magnetic layer 21a and the second magnetic layer 21c disposed via the nonmagnetic intermediate layer 21b.
第１磁性層２１ａおよび第２磁性層２１ｃを構成する材料として、いずれもＣｏＦｅ合金が例示される。第１磁性層２１ａおよび第２磁性層２１ｃがＣｏＦｅ合金から構成される場合において、第１磁性層２１ａを構成するＣｏＦｅ合金におけるＦｅの含有量を、第２磁性層２１ｃを構成するＣｏＦｅ合金におけるＦｅの含有量よりも高くすることが好ましい。このようにすることで、第１磁性層２１ａの保磁力が第２磁性層２１ｃの保磁力よりも高くなり、成膜中に磁化された第１磁性層２１ａによって第２磁性層２１ｃが磁化されやすくなる。第１磁性層２１ａと第２磁性層２１ｃと間に位置する非磁性中間層２１ｂはＲｕなどにより構成される。 As a material constituting the first magnetic layer 21a and the second magnetic layer 21c, a CoFe alloy is exemplified. In the case where the first magnetic layer 21a and the second magnetic layer 21c are made of a CoFe alloy, the Fe content in the CoFe alloy constituting the first magnetic layer 21a is defined as the Fe content in the CoFe alloy constituting the second magnetic layer 21c. It is preferable to make it higher than the content of. By doing so, the coercive force of the first magnetic layer 21a becomes higher than the coercive force of the second magnetic layer 21c, and the second magnetic layer 21c is magnetized by the first magnetic layer 21a magnetized during the film formation. It becomes easy. The nonmagnetic intermediate layer 21b located between the first magnetic layer 21a and the second magnetic layer 21c is made of Ru or the like.
本実施形態に係る磁気センサ１０が備える磁気抵抗効果素子は、第２磁性層２１ｃが、非磁性中間層２１ｂに接する第１強磁性材料層２１ｃ１と、第１強磁性材料層２１ｃ１の上に設けられた介在層２１ｃ２と、介在層２１ｃ２の上に設けられ第１強磁性材料層２１ｃ１に磁気的に結合する第２強磁性材料層２１ｃ３とを備える。 In the magnetoresistive element included in the magnetic sensor 10 according to the present embodiment, the second magnetic layer 21c is provided on the first ferromagnetic material layer 21c1 and the first ferromagnetic material layer 21c1 in contact with the nonmagnetic intermediate layer 21b. And a second ferromagnetic material layer 21c3 provided on the intermediate layer 21c2 and magnetically coupled to the first ferromagnetic material layer 21c1.
第１強磁性材料層２１ｃ１を構成する材料および第２強磁性材料層２１ｃ３を構成する材料の具体例としてＣｏＦｅ合金が例示される。介在層２１ｃ２の具体的な構成（組成、厚さなど）は、大気開放など外部環境が変化しても介在層２１ｃ２と基板２９との間に位置する層の変質を抑制することができるとともに、第１強磁性材料層２１ｃ１と第２強磁性材料層２１ｃ３とが介在層２１ｃ２を介して磁気的に結合することができる限り、限定されない。介在層２１ｃ２は、ＰｔおよびＰｄからなる群から選ばれる１種または２種を含有することが好ましく、ＰｔおよびＰｄからなる群から選ばれる１種または２種からなることがより好ましい。 A CoFe alloy is exemplified as a specific example of the material constituting the first ferromagnetic material layer 21c1 and the material constituting the second ferromagnetic material layer 21c3. The specific configuration (composition, thickness, etc.) of the intervening layer 21c2 can suppress the alteration of the layer located between the intervening layer 21c2 and the substrate 29 even when the external environment changes such as opening to the atmosphere. There is no limitation as long as the first ferromagnetic material layer 21c1 and the second ferromagnetic material layer 21c3 can be magnetically coupled via the intervening layer 21c2. The intervening layer 21c2 preferably contains one or two selected from the group consisting of Pt and Pd, and more preferably one or two selected from the group consisting of Pt and Pd.
セルフピン止め型の固定磁性層２１の磁化は、図３に示されるとおりである。すなわち、第１磁性層２１ａの磁化の向きＳ１が右向きとなっており、非磁性中間層２１ｂを介して第１磁性層２１ａとＲＫＫＹ相互作用が生じている第２磁性層２１ｃを構成する第１強磁性材料層２１ｃ１の磁化の向きＳ２１および第２強磁性材料層２１ｃ３の磁化の向きＳ２２はいずれも左向きとなっている。なお、固定磁性層２１の磁化固定力をできるだけ強くする観点から、第１磁性層２１ａと第２磁性層２１ｃとの磁化量（飽和磁化Ｍｓ・層厚ｔ）の差が実質的にゼロとなるように調整されている。フリー磁性層２３の磁化の向きＦは、形状異方性に基づく磁気異方性により、紙面奥向きである。 The magnetization of the self-pinned pinned magnetic layer 21 is as shown in FIG. That is, the magnetization direction S1 of the first magnetic layer 21a is rightward, and the first magnetic layer 21c constituting the RKKY interaction with the first magnetic layer 21a via the nonmagnetic intermediate layer 21b is formed. The magnetization direction S21 of the ferromagnetic material layer 21c1 and the magnetization direction S22 of the second ferromagnetic material layer 21c3 are both leftward. From the viewpoint of making the magnetization pinning force of the pinned magnetic layer 21 as strong as possible, the difference in magnetization (saturation magnetization Ms · layer thickness t) between the first magnetic layer 21a and the second magnetic layer 21c becomes substantially zero. Have been adjusted so that. The magnetization direction F of the free magnetic layer 23 is the back of the drawing due to the magnetic anisotropy based on the shape anisotropy.
非磁性材料層２２は、Ｃｕなどにより構成される。フリー磁性層２３は、ＣｏＦｅ合金、ＮｉＦｅ合金、ＣｏＦｅＮｉ合金などの磁性材料で構成される。フリー磁性層２３は複数の膜からなる積層構造を有していてもよい。 The nonmagnetic material layer 22 is made of Cu or the like. The free magnetic layer 23 is made of a magnetic material such as a CoFe alloy, a NiFe alloy, or a CoFeNi alloy. The free magnetic layer 23 may have a laminated structure composed of a plurality of films.
本発明の一実施形態に係る磁気センサ１０の製造方法は限定されない。次に説明する方法により製造すれば、本発明の一実施形態に係る磁気センサ１０を効率的に製造することができる。 The manufacturing method of the magnetic sensor 10 which concerns on one Embodiment of this invention is not limited. If it manufactures with the method demonstrated below, the magnetic sensor 10 which concerns on one Embodiment of this invention can be manufactured efficiently.
図４は、本発明の一実施形態に係る磁気センサ１０の製造方法の一例のフロー図である。このフロー図にしたがって、以下説明する。本実施形態に係る製造方法では、真空チャンバ内で、第１の磁気抵抗効果素子ＧＭＲ１を構成する第１積層構造体を基板２９上に製造した後、第１積層構造体が配置されている基板２９上に、第２の磁気抵抗効果素子ＧＭＲ２を構成する第２積層構造体を製造することにより、磁気センサ１０は製造される。 FIG. 4 is a flowchart of an example of a method for manufacturing the magnetic sensor 10 according to an embodiment of the present invention. The following description will be made according to this flowchart. In the manufacturing method according to the present embodiment, after the first stacked structure constituting the first magnetoresistive element GMR1 is manufactured on the substrate 29 in the vacuum chamber, the substrate on which the first stacked structure is disposed. The magnetic sensor 10 is manufactured by manufacturing the second laminated structure constituting the second magnetoresistive effect element GMR2 on 29.
まず、真空チャンバ中で基板２９上にシード層２０を製造する（ステップＳ１０１）。この際、下地層の形成を行ってもよい。次に、シード層２０上に、第１磁性層２１ａ、非磁性中間層２１ｂ、第１強磁性材料層２１ｃ１および介在層２１ｃ２からなる積層構造部１１を真空チャンバ中で形成する（ステップＳ１０２、図５）。 First, the seed layer 20 is manufactured on the substrate 29 in a vacuum chamber (step S101). At this time, an underlayer may be formed. Next, on the seed layer 20, the laminated structure portion 11 including the first magnetic layer 21a, the nonmagnetic intermediate layer 21b, the first ferromagnetic material layer 21c1, and the intervening layer 21c2 is formed in a vacuum chamber (Step S102, FIG. 5).
続いて、介在層２１ｃ２は外部環境の影響を受けにくい材料から構成されているため、この段階で大気開放を行う（ステップＳ１０３）。すなわち、上記の積層構造部１１が基板２９上に形成された状態で、これを真空チャンバから取り出す。 Subsequently, since the intervening layer 21c2 is made of a material that is not easily influenced by the external environment, the atmosphere is released at this stage (step S103). That is, in a state where the above-described laminated structure portion 11 is formed on the substrate 29, this is taken out from the vacuum chamber.
そして、この積層構造部１１が備える第１磁性層２１ａおよび第１強磁性材料層２１ｃ１を磁化する作業（着磁）を行う（ステップＳ１０４）。その結果、図６に示されるように、相対的に磁化量(Ｍｓ・ｔ)が大きく磁化しやすい第１磁性層２１ａが着磁の向きに沿った向きにまず磁化され、第１磁性層２１ａと第１強磁性材料層２１ｃ１との間のＲＫＫＹ相互作用によって、第１強磁性材料層２１ｃ１は第１磁性層２１ａとは反平行な向きに磁化される。この着磁のために印加される磁場の強度は限定されない。通常、真空チャンバ内に配置可能な着磁装置が発生させうる磁場は１０ｍＴ程度が上限となるため、着磁のために印加される磁場強度を例えば８０ｍＴ程度以上とすることにより、本製造方法による効果（固定磁化層２１の着磁のために印加される磁場強度が大きいため磁化分散が少なく、ＭＲ比の大きな磁気抵抗効果素子が得られること）を安定的に享受することが可能である。 Then, an operation (magnetization) is performed to magnetize the first magnetic layer 21a and the first ferromagnetic material layer 21c1 included in the multilayer structure unit 11 (step S104). As a result, as shown in FIG. 6, the first magnetic layer 21a having a relatively large magnetization (Ms · t) and easily magnetized is first magnetized in the direction along the magnetization direction, and the first magnetic layer 21a is first magnetized. Due to the RKKY interaction between the first ferromagnetic material layer 21c1 and the first ferromagnetic material layer 21c1, the first ferromagnetic material layer 21c1 is magnetized in an antiparallel direction to the first magnetic layer 21a. The intensity of the magnetic field applied for this magnetization is not limited. Normally, the upper limit of the magnetic field that can be generated by the magnetizing device that can be arranged in the vacuum chamber is about 10 mT, so that the intensity of the magnetic field applied for magnetization is, for example, about 80 mT or more, so It is possible to stably enjoy the effect (a magnetoresistive effect element having a small MR dispersion and a high MR ratio can be obtained because the magnetic field strength applied for magnetization of the pinned magnetic layer 21 is large).
こうして着磁が完了したら、第１磁性層２１ａおよび第１強磁性材料層２１ｃ１が磁化された状態にある積層構造部を真空チャンバ内に入れて、第２強磁性材料層２１ｃ３以降の形成（具体的には、第２強磁性材料層２１ｃ３、非磁性材料層２２、フリー磁性層２３および保護層２５の形成を含む。）を行う（ステップＳ１０５）。図７は、第２強磁性材料層２１ｃ３が形成された状態を概念的に示す断面図である。第２強磁性材料層２１ｃ３は介在層２１ｃ２を介して第１強磁性材料層２１ｃ１と磁気的に結合するため、第２強磁性材料層２１ｃ３の磁化の向きＳ２２は、第１強磁性材料層２１ｃ１の磁化の向きＳ２１に沿った向き（平行）となる。 When the magnetization is completed in this way, the laminated structure portion in which the first magnetic layer 21a and the first ferromagnetic material layer 21c1 are magnetized is placed in the vacuum chamber, and the formation of the second ferromagnetic material layer 21c3 and later (specifically) Specifically, the second ferromagnetic material layer 21c3, the nonmagnetic material layer 22, the free magnetic layer 23, and the protective layer 25 are formed) (step S105). FIG. 7 is a cross-sectional view conceptually showing a state in which the second ferromagnetic material layer 21c3 is formed. Since the second ferromagnetic material layer 21c3 is magnetically coupled to the first ferromagnetic material layer 21c1 via the intervening layer 21c2, the magnetization direction S22 of the second ferromagnetic material layer 21c3 is set to the first ferromagnetic material layer 21c1. Direction (parallel) along the magnetization direction S21.
ここで、固定磁性層２１の磁化固定力をできるだけ強くする観点から、第１磁性層２１ａおよび第２磁性層２１ｃは、第１磁性層２１ａの磁化量と第２磁性層２１ｃの磁化量とが等しくなるように設定されることが好ましい。この場合には、大気中で行われる第１磁性層２１ａおよび第１強磁性材料層２１ｃ１の磁化（ステップＳ１０４）は、第１強磁性材料層２１ａの磁化量と前記第１強磁性材料層２１ｃ１の磁化量とに相違がある状態で行われる。 Here, from the viewpoint of making the magnetization pinning force of the pinned magnetic layer 21 as strong as possible, the first magnetic layer 21a and the second magnetic layer 21c have a magnetization amount of the first magnetic layer 21a and a magnetization amount of the second magnetic layer 21c. It is preferable that they are set to be equal. In this case, the magnetization (step S104) of the first magnetic layer 21a and the first ferromagnetic material layer 21c1 performed in the atmosphere is the amount of magnetization of the first ferromagnetic material layer 21a and the first ferromagnetic material layer 21c1. This is performed in a state where there is a difference in the magnetization amount.
以上のようにして、第１の磁気抵抗効果素子ＧＭＲ１の製造が完了した後、第１の磁気抵抗効果素子ＧＭＲ１に係る第１積層構造体が形成されている基板２９上に、第２の磁気抵抗効果素子ＧＭＲ２に係る第２積層構造体の製造を行う。 As described above, after the manufacture of the first magnetoresistive effect element GMR1 is completed, the second magnetic field is formed on the substrate 29 on which the first laminated structure related to the first magnetoresistive effect element GMR1 is formed. The second laminated structure according to the resistance effect element GMR2 is manufactured.
具体的には、第１の磁気抵抗効果素子ＧＭＲ１に係る第１積層構造体と同様に、第１強磁性材料層２１ｃ１および介在層２１ｃ２からなる積層構造部を真空チャンバ中で形成する（ステップＳ１０６）。続いて、大気開放を行う（ステップＳ１０７）。すなわち、第１の磁気抵抗効果素子ＧＭＲ１に係る第１積層構造体および第２の磁気抵抗効果素子ＧＭＲ２に係る上記の積層構造部が基板２９上に形成された状態で、これを真空チャンバから取り出す。 Specifically, similarly to the first laminated structure according to the first magnetoresistive element GMR1, the laminated structure portion including the first ferromagnetic material layer 21c1 and the intervening layer 21c2 is formed in the vacuum chamber (step S106). ). Subsequently, the atmosphere is released (step S107). That is, in a state where the first laminated structure related to the first magnetoresistive effect element GMR1 and the above laminated structure related to the second magnetoresistive effect element GMR2 are formed on the substrate 29, they are taken out from the vacuum chamber. .
そして、この積層構造部が備える第１磁性層２１ａおよび第１強磁性材料層２１ｃ１を磁化する作業（着磁）を行う（ステップＳ１０８）。その結果、相対的に磁化しやすい第１磁性層２１ａが着磁の向きに沿った向きにまず磁化され、第１磁性層２１ａと第１強磁性材料層２１ｃ１との間のＲＫＫＹ相互作用によって、第１強磁性材料層２１ｃ１は第１磁性層２１ａとは反平行な向きに磁化される。ここの着磁のために印加される磁場の強度は、基板２９上に配置されている第１積層構造体における固定磁性層２１の磁化ができるだけ分散しない範囲で設定してもよい。第１積層構造体の固定磁性層２１の磁化分散の程度を低く抑えることを実現する観点から、２００ｍＴ程度を上限とすることが好ましい場合がある。 Then, an operation (magnetization) is performed to magnetize the first magnetic layer 21a and the first ferromagnetic material layer 21c1 included in the stacked structure portion (step S108). As a result, the first magnetic layer 21a that is relatively easily magnetized is first magnetized in the direction along the magnetization direction, and due to the RKKY interaction between the first magnetic layer 21a and the first ferromagnetic material layer 21c1, The first ferromagnetic material layer 21c1 is magnetized in an antiparallel direction to the first magnetic layer 21a. The intensity of the magnetic field applied for magnetization here may be set in a range in which the magnetization of the pinned magnetic layer 21 in the first laminated structure disposed on the substrate 29 is not dispersed as much as possible. From the viewpoint of realizing a low degree of magnetization dispersion in the pinned magnetic layer 21 of the first laminated structure, it may be preferable to set the upper limit to about 200 mT.
こうして着磁が完了したら、第１磁性層２１ａおよび第１強磁性材料層２１ｃ１が磁化された状態にある積層構造部を真空チャンバ内に入れて、第２強磁性材料層２１ｃ３以降の形成（具体的には、第２強磁性材料層２１ｃ３、非磁性材料層２２、フリー磁性層２３および保護層２５の形成を含む。）を行う（ステップＳ１０８）。 When the magnetization is completed in this way, the laminated structure portion in which the first magnetic layer 21a and the first ferromagnetic material layer 21c1 are magnetized is placed in the vacuum chamber, and the formation of the second ferromagnetic material layer 21c3 and later (specifically) Specifically, the second ferromagnetic material layer 21c3, the nonmagnetic material layer 22, the free magnetic layer 23, and the protective layer 25 are formed) (step S108).
第１強磁性材料層２１ｃ１の磁化量は、第１強磁性材料層２１ｃ１に磁気的に結合する第２強磁性材料層２１ｃ３および第１強磁性材料層２１ｃ１を備える第２磁性層２１ｃの磁化量が、第１磁性層２１ａの磁化量と等しくなるように設定されることが好ましい。 The amount of magnetization of the first ferromagnetic material layer 21c1 is the amount of magnetization of the second magnetic layer 21c including the second ferromagnetic material layer 21c3 and the first ferromagnetic material layer 21c1 that are magnetically coupled to the first ferromagnetic material layer 21c1. Is preferably set to be equal to the magnetization amount of the first magnetic layer 21a.
以上のステップにより、第１の磁気抵抗効果素子ＧＭＲ１に係る第１積層構造体および第２の磁気抵抗効果素子ＧＭＲ２に係る第１積層構造体を同一の基板２９上に製造することができる。 Through the above steps, the first stacked structure according to the first magnetoresistive element GMR1 and the first stacked structure according to the second magnetoresistive element GMR2 can be manufactured on the same substrate 29.
本発明の一実施形態に係る磁気抵抗効果素子を備えた磁気センサは、電流センサとして好適に使用されうる。 A magnetic sensor including a magnetoresistive effect element according to an embodiment of the present invention can be suitably used as a current sensor.
本発明の一実施形態に係る電流センサの具体例として、磁気比例式電流センサおよび磁気平衡式電流センサが挙げられる。磁気比例式電流センサは、被測定電流により生じた誘導磁界を磁気センサ１０により測定して被測定電流を計測する方式の電流センサである。 Specific examples of the current sensor according to the embodiment of the present invention include a magnetic proportional current sensor and a magnetic balanced current sensor. The magnetic proportional current sensor is a type of current sensor that measures the current to be measured by measuring the induced magnetic field generated by the current to be measured by the magnetic sensor 10.
本発明の一実施形態に係る電流センサの他の具体例として磁気平衡式電流センサが挙げられる。図８は、本発明の一実施形態に係る磁気平衡式電流センサの構成を概念的に示す図である。図８に示されるように、磁気平衡式電流センサ３０は、磁界検出ブリッジ回路１０Ｃおよび磁界検出ブリッジ回路１０Ｃからの出力信号（中点電位差）を入力とする増幅器（図示せず）を備える磁気センサ１０、フィードバックコイル４０ならびに増幅器から出力される増幅信号を入力としてフィードバックコイル４０への電流量を制御するための出力信号を生成可能な制御装置（図示せず）を備える。なお、図８に示される磁界検出ブリッジ回路１０Ｃでは、グランドが複数（Ｇｎｄ１，Ｇｎｄ２）設けられている。 Another specific example of the current sensor according to the embodiment of the present invention is a magnetic balance type current sensor. FIG. 8 is a diagram conceptually showing the configuration of a magnetic balanced current sensor according to an embodiment of the present invention. As shown in FIG. 8, the magnetic balanced current sensor 30 includes a magnetic field detection bridge circuit 10C and an amplifier (not shown) that receives an output signal (midpoint potential difference) from the magnetic field detection bridge circuit 10C. 10. A control device (not shown) capable of generating an output signal for controlling the amount of current to the feedback coil 40 by using the feedback coil 40 and the amplified signal output from the amplifier as inputs. In the magnetic field detection bridge circuit 10C shown in FIG. 8, a plurality of grounds (Gnd1, Gnd2) are provided.
磁気平衡式電流センサ３０における被測定電流の測定原理は次のとおりである。被測定電流により誘導磁界が生じると、これを磁気センサ１０にて測定し、制御装置は、測定された磁界強度に応じてフィードバックコイル４０に電流を流すための信号を生成して、このフィードバックコイル４０からの誘導磁界によって、被測定電流により誘導磁界を打ち消す。こうして磁気センサによって測定される外部磁場の強度がゼロとなったとき（平衡状態となったとき）のフィードバックコイル４０に流れる電流値に基づいて、被測定電流を測定する。 The measurement principle of the current to be measured in the magnetic balance type current sensor 30 is as follows. When an induced magnetic field is generated by the current to be measured, this is measured by the magnetic sensor 10, and the control device generates a signal for causing a current to flow through the feedback coil 40 in accordance with the measured magnetic field strength, and this feedback coil. The induced magnetic field from 40 is canceled by the current to be measured. Thus, the current to be measured is measured based on the value of the current flowing through the feedback coil 40 when the intensity of the external magnetic field measured by the magnetic sensor becomes zero (when the equilibrium state is reached).
以上説明した実施形態は、本発明の理解を容易にするために記載されたものであって、本発明を限定するために記載されたものではない。したがって、上記実施形態に開示された各要素は、本発明の技術的範囲に属する全ての設計変更や均等物をも含む趣旨である。 The embodiment described above is described for facilitating understanding of the present invention, and is not described for limiting the present invention. Therefore, each element disclosed in the above embodiment is intended to include all design changes and equivalents belonging to the technical scope of the present invention.
以下、実施例等により本発明をさらに具体的に説明するが、本発明の範囲はこれらの実施例等に限定されるものではない。 EXAMPLES Hereinafter, although an Example etc. demonstrate this invention further more concretely, the scope of the present invention is not limited to these Examples etc.
（実施例１）
絶縁層を有する基板を真空チャンバ内に配置し、基板の絶縁層上に、下からシード層；ＮｉＦｅＣｒ（４２）／固定磁性層の一部［第１磁性層；Ｃｏ４０Ｆｅ６０（１９）／非磁性中間層；Ｒｕ（３．６）／第２磁性層の一部〔第１磁性材料層；Ｃｏ９０Ｆｅ１０（１０）／介在層；Ｐｔ（１０）〕］の順に積層して、第１積層構造体の一部である第１積層構造部を得た。括弧内の数値は層厚を示し単位はÅである。
Example 1
A substrate having an insulating layer is placed in a vacuum chamber, and a seed layer; NiFeCr (42) / part of a pinned magnetic layer [first magnetic layer; Co 40 Fe 60 (19) / A nonmagnetic intermediate layer; Ru (3.6) / part of the second magnetic layer [first magnetic material layer; Co 90 Fe 10 (10) / intervening layer; Pt (10)]] The 1st laminated structure part which is a part of 1 laminated structure was obtained. The numbers in parentheses indicate the layer thickness and the unit is Å.
第１積層構造部が形成された基板を真空チャンバから取り出して、大気中にて、第１磁性層および第１磁性材料層を着磁した。着磁のために印加された磁場の強度は２００ｍＴであった。 The substrate on which the first laminated structure portion was formed was taken out of the vacuum chamber, and the first magnetic layer and the first magnetic material layer were magnetized in the atmosphere. The intensity of the magnetic field applied for magnetization was 200 mT.
着磁後に、第１積層構造部が形成された基板を真空チャンバ内に配置し、介在層上に、固定磁性層の残部［第２磁性層の残部〔第２磁性材料層；Ｃｏ９０Ｆｅ１０（１４）〕］／非磁性材料層；Ｃｕ（２２）／フリー磁性層［Ｃｏ９０Ｆｅ１０（１０）／Ｎｉ８２．５Ｆｅ１７．５（７０）］／保護層；Ｔａ（１００）の順に積層して第１積層構造体を基板上に形成した。括弧内の数値は層厚を示し単位はÅである。 After magnetization, the substrate on which the first laminated structure portion is formed is placed in a vacuum chamber, and the remaining portion of the pinned magnetic layer [the remaining portion of the second magnetic layer [second magnetic material layer; Co 90 Fe 10] on the intervening layer. (14)]] / nonmagnetic material layer; Cu (22) / free magnetic layer [Co 90 Fe 10 (10) / Ni 82.5 Fe 17.5 (70)] / protective layer; Ta (100) in this order The first stacked structure was formed on the substrate by stacking. The numbers in parentheses indicate the layer thickness and the unit is Å.
こうして第１の磁気抵抗効果素子を基板上に形成した。この第１の磁気抵抗効果素子が形成された基板における絶縁層上に、次のようにして第２の磁気抵抗効果素子を形成した。 Thus, the first magnetoresistive element was formed on the substrate. A second magnetoresistive element was formed as follows on the insulating layer of the substrate on which the first magnetoresistive element was formed.
まず、第１の磁気抵抗効果素子が形成された基板が真空チャンバ内に配置された状態で、下からシード層；ＮｉＦｅＣｒ（４２）／固定磁性層の一部［第１磁性層；Ｃｏ４０Ｆｅ６０（１９）／非磁性中間層；Ｒｕ（３．６）／第２磁性層の一部〔第１磁性材料層；Ｃｏ９０Ｆｅ１０（１０）／介在層；Ｐｔ（１０）〕］の順に積層して、第２積層構造体の一部である第２積層構造部を得た。括弧内の数値は層厚を示し単位はÅである。 First, in a state where the substrate on which the first magnetoresistive element is formed is disposed in the vacuum chamber, the seed layer; NiFeCr (42) / part of the fixed magnetic layer [first magnetic layer; Co 40 Fe 60 (19) / nonmagnetic intermediate layer; Ru (3.6) / part of second magnetic layer [first magnetic material layer; Co 90 Fe 10 (10) / intervening layer; Pt (10)]] Lamination was performed to obtain a second laminated structure portion that is a part of the second laminated structure. The numbers in parentheses indicate the layer thickness and the unit is Å.
第１積層構造体および第２積層構造部が形成された基板を真空チャンバから取り出して、大気中にて、第２積層構造部の第１磁性層および第１磁性材料層を着磁した。着磁のために印加された磁場の向きは、第１積層構造部を着磁するために印加された磁場の向きと反対向き（反平行）であり、着磁のために印加された磁場の強度は１００ｍＴであった。 The substrate on which the first laminated structure and the second laminated structure were formed was taken out of the vacuum chamber, and the first magnetic layer and the first magnetic material layer of the second laminated structure were magnetized in the atmosphere. The direction of the magnetic field applied for magnetization is opposite (antiparallel) to the direction of the magnetic field applied for magnetizing the first stacked structure portion. The strength was 100 mT.
着磁後に、第１積層構造体および第２積層構造部が形成された基板を真空チャンバ内に配置し、介在層上に、固定磁性層の残部［第２磁性層の残部〔第２磁性材料層；Ｃｏ９０Ｆｅ１０（１４）〕］／非磁性材料層；Ｃｕ（２２）／フリー磁性層［Ｃｏ９０Ｆｅ１０（１０）／Ｎｉ８２．５Ｆｅ１７．５（７０）］／保護層；Ｔａ（１００）の順に積層して第２積層構造体を基板上に形成した。括弧内の数値は層厚を示し単位はÅである。 After magnetization, the substrate on which the first laminated structure and the second laminated structure are formed is placed in a vacuum chamber, and the remaining portion of the fixed magnetic layer [the remaining portion of the second magnetic layer [second magnetic material] Layer; Co 90 Fe 10 (14)]] / nonmagnetic material layer; Cu (22) / free magnetic layer [Co 90 Fe 10 (10) / Ni 82.5 Fe 17.5 (70)] / protective layer; A second stacked structure was formed on the substrate by stacking Ta (100) in this order. The numbers in parentheses indicate the layer thickness and the unit is Å.
こうして、同一基板上に、感度軸の向きが互いに異なる（具体的には反平行の関係にある）第１積層構造体および第２積層構造体を形成し、第１の磁気抵抗効果素子および第２の磁気抵抗効果素子を得た。 Thus, on the same substrate, the first laminated structure and the second laminated structure having different directions of sensitivity axes (specifically, in an antiparallel relationship) are formed, and the first magnetoresistive element and the first laminated 2 magnetoresistive effect elements were obtained.
（比較例１）
絶縁層を有する基板を真空チャンバ内に配置し、基板の絶縁層上に、下からシード層；ＮｉＦｅＣｒ（４２）／固定磁性層［第１磁性層；Ｃｏ４０Ｆｅ６０（１９）／非磁性中間層；Ｒｕ（３．６）／第２磁性層；Ｃｏ９０Ｆｅ１０（２４）］／非磁性材料層；Ｃｕ（２２）／フリー磁性層［Ｃｏ９０Ｆｅ１０（１０）／Ｎｉ８２．５Ｆｅ１７．５（７０）］／保護層；Ｔａ（１００）の順に積層して、第１比較積層構造体を得た。括弧内の数値は層厚を示し単位はÅである。ここで、第１磁性層を成膜する際に磁場（強度：１０ｍＴ）を印加して、第１磁性層の磁化を行った。こうして、比較用の磁気抵抗効果素子を得た。
(Comparative Example 1)
A substrate having an insulating layer is placed in a vacuum chamber, and a seed layer; NiFeCr (42) / pinned magnetic layer [first magnetic layer; Co 40 Fe 60 (19) / nonmagnetic intermediate layer] is formed on the insulating layer of the substrate from below. Layer: Ru (3.6) / second magnetic layer; Co 90 Fe 10 (24)] / nonmagnetic material layer; Cu (22) / free magnetic layer [Co 90 Fe 10 (10) / Ni 82.5 Fe 17.5 (70)] / Protective layer; Ta (100) was laminated in this order to obtain a first comparative laminated structure. The numbers in parentheses indicate the layer thickness and the unit is Å. Here, when the first magnetic layer was formed, a magnetic field (intensity: 10 mT) was applied to magnetize the first magnetic layer. Thus, a comparative magnetoresistive element was obtained.
（ＭＲ比の測定）
実施例１および比較例１により製造した磁気抵抗効果素子に対して外部磁場を印加してＭＲ比（単位：％）を測定した。
その結果、図９に示されるように、比較例１に係る磁気抵抗効果素子のＭＲ比は８．４％であったのに対し、実施例１に係る磁気抵抗効果素子のＭＲ比は９．１％であった。
(Measurement of MR ratio)
An MR field (unit:%) was measured by applying an external magnetic field to the magnetoresistive effect element manufactured according to Example 1 and Comparative Example 1.
As a result, as shown in FIG. 9, the MR ratio of the magnetoresistive effect element according to Comparative Example 1 was 8.4%, whereas the MR ratio of the magnetoresistive effect element according to Example 1 was 9. 1%.
（実施例２）
以下のようにして、介在層の厚さが磁気抵抗効果素子のＭＲ比に与える影響を評価した。
(Example 2)
The influence of the thickness of the intervening layer on the MR ratio of the magnetoresistive effect element was evaluated as follows.
絶縁層を有する基板を真空チャンバ内に配置し、基板の絶縁層上に、下からシード層；ＮｉＦｅＣｒ（４２）／固定磁性層の一部［第１磁性層；Ｃｏ４０Ｆｅ６０（１９）／非磁性中間層；Ｒｕ（３．６）／第２磁性層の一部〔第１磁性材料層；Ｃｏ９０Ｆｅ１０（１０）／介在層；Ｐｔ（ｘ）〕］の順に積層して、第１積層構造体の一部である第１積層構造部を得た。括弧内の数値は層厚を示し単位はÅである。Ｐｔについては、厚さｘを０Å〜２０Åの範囲で変化させた。 A substrate having an insulating layer is placed in a vacuum chamber, and a seed layer; NiFeCr (42) / part of a pinned magnetic layer [first magnetic layer; Co 40 Fe 60 (19) / Nonmagnetic intermediate layer; Ru (3.6) / part of second magnetic layer [first magnetic material layer; Co 90 Fe 10 (10) / intervening layer; Pt (x)]] The 1st laminated structure part which is a part of 1 laminated structure was obtained. The numbers in parentheses indicate the layer thickness and the unit is Å. For Pt, the thickness x was changed in the range of 0 to 20 mm.
第１積層構造部が形成された基板を真空チャンバから取り出して、大気中にて、第１磁性層および第１磁性材料層を着磁した。着磁のために印加された磁場の強度は２００ｍＴであった。 The substrate on which the first laminated structure portion was formed was taken out of the vacuum chamber, and the first magnetic layer and the first magnetic material layer were magnetized in the atmosphere. The intensity of the magnetic field applied for magnetization was 200 mT.
着磁後に、第１積層構造部が形成された基板を真空チャンバ内に配置し、介在層上に、固定磁性層の残部［第２磁性層の残部〔第２磁性材料層；Ｃｏ９０Ｆｅ１０（１４）〕］／非磁性材料層；Ｃｕ（２２）／フリー磁性層［Ｃｏ９０Ｆｅ１０（１０）／Ｎｉ８２．５Ｆｅ１７．５（７０）］／保護層；Ｔａ（１００）の順に積層して第１積層構造体を基板上に形成した。括弧内の数値は層厚を示し単位はÅである。 After magnetization, the substrate on which the first laminated structure portion is formed is placed in a vacuum chamber, and the remaining portion of the pinned magnetic layer [the remaining portion of the second magnetic layer [second magnetic material layer; Co 90 Fe 10] on the intervening layer. (14)]] / nonmagnetic material layer; Cu (22) / free magnetic layer [Co 90 Fe 10 (10) / Ni 82.5 Fe 17.5 (70)] / protective layer; Ta (100) in this order The first stacked structure was formed on the substrate by stacking. The numbers in parentheses indicate the layer thickness and the unit is Å.
こうして得られた磁気抵抗効果素子に対して外部磁場を印加してＭＲ比（単位：％）を測定し、ＭＲ比と介在層の厚さ（Å）との関係を図１０に示した。 The MR ratio (unit:%) was measured by applying an external magnetic field to the magnetoresistive effect element thus obtained, and the relationship between the MR ratio and the thickness (Å) of the intervening layer is shown in FIG.
図１０に示されるように、介在層が設けられていない場合には、大気開放したことに起因して第１積層構造部を構成する材料の変質が生じ、磁気抵抗効果素子の製造が適切に行われず、ＭＲ比は０％となった。介在層を設けることにより磁気抵抗効果素子のＭＲ比を高めることが可能となる。ただし、介在層の厚さが過度に大きい場合には、ＭＲ比の低下が認められた。これは、第１磁性材料層と第２磁性材料層との磁気的な結合の程度が低下したためと推測される。 As shown in FIG. 10, in the case where no intervening layer is provided, the material constituting the first laminated structure portion is altered due to the release to the atmosphere, and the magnetoresistive effect element is appropriately manufactured. The MR ratio was 0%. By providing the intervening layer, the MR ratio of the magnetoresistive effect element can be increased. However, when the thickness of the intervening layer was excessively large, a reduction in MR ratio was observed. This is presumably because the degree of magnetic coupling between the first magnetic material layer and the second magnetic material layer has decreased.
本発明に係る磁気センサを備える電流センサは、電気自動車はハイブリッドカーなどの電流センサとして好適に使用されうる。 The current sensor including the magnetic sensor according to the present invention can be suitably used as a current sensor for an electric vehicle such as a hybrid car.
１０ 磁気センサ
１０Ｃ 磁界検出ブリッジ回路
ＧＭＲ１ 第１の磁気抵抗効果素子
ＧＭＲ２ 第２の磁気抵抗効果素子
Ｖｄｄ 電源端子
Ｇｎｄ グランド
Ｏｕｔ１ 直列に接続された第１の磁気抵抗効果素子ＧＭＲ１と第２の磁気抵抗効果素子ＧＭＲ２との間における出力
Ｏｕｔ２ 直列に接続された第２の磁気抵抗効果素子ＧＭＲ２と第１の磁気抵抗効果素子ＧＭＲ１との間における出力
Ａｍｐ 増幅器
１ 長尺パターン
２ 折り返し部
２Ａ 電極
２０ シード層
２１ 固定磁性層
２１ａ 第１磁性層
２１ｂ 非磁性中間層
２１ｃ 第２磁性層
２１ｃ１ 第１強磁性材料層
２１ｃ２ 介在層
２１ｃ３ 第２強磁性材料層
２２ 非磁性材料層
２３ フリー磁性層
２５ 保護層
２９ 基板
Ｓ１ 第１磁性層２１ａの磁化の向き
Ｓ２１ 第１強磁性材料層２１ｃ１の磁化の向き
Ｓ２２ 第２強磁性材料層２１ｃ３の磁化の向き
Ｆ フリー磁性層２３の磁化の向き
１１ 積層構造部
３０ 磁気平衡式電流センサ
４０ フィードバックコイル
Ｇｎｄ１ グランド
Ｇｎｄ２ グランド
DESCRIPTION OF SYMBOLS 10 Magnetic sensor 10C Magnetic field detection bridge circuit GMR1 1st magnetoresistive effect element GMR2 2nd magnetoresistive effect element Vdd Power supply terminal Gnd Ground Out1 1st magnetoresistive effect element GMR1 and 2nd magnetoresistive effect connected in series Output Out2 between the element GMR2 Output Amp between the second magnetoresistive effect element GMR2 and the first magnetoresistive effect element GMR1 connected in series Amplifier 1 Long pattern 2 Return portion 2A Electrode 20 Seed layer 21 Pinned magnetic layer 21a first magnetic layer 21b nonmagnetic intermediate layer 21c second magnetic layer 21c1 first ferromagnetic material layer 21c2 intervening layer 21c3 second ferromagnetic material layer 22 nonmagnetic material layer 23 free magnetic layer 25 protective layer 29 substrate S1 Direction of magnetization S21 of the first magnetic layer 21a Direction of magnetization S2 of the first ferromagnetic material layer 21c1 Second magnetization direction F free magnetization direction 11 laminated structure 30 magnetic balance type current sensor 40 feedback coil Gnd1 ground Gnd2 ground of the magnetic layer 23 of the ferromagnetic material layer 21c3
Claims (10)
前記磁気抵抗効果素子は、固定磁性層とフリー磁性層とが非磁性材料層を介して積層された積層構造体が基板上に配置された構成を有し、
前記固定磁性層は、第１磁性層と前記非磁性材料層に接する第２磁性層とが非磁性中間層を介して積層され、前記第１磁性層と前記第２磁性層とが反平行に磁化固定されたセルフピン止め型であり、
前記第２磁性層は、前記非磁性中間層に接する第１強磁性材料層と、前記第１強磁性材料層の上に設けられた介在層と、前記介在層の上に設けられ前記第１強磁性材料層に磁気的に結合する第２強磁性材料層とを備えること
を特徴とする磁気センサ。 A magnetic sensor having a magnetoresistive effect element having a sensitivity axis in a specific direction,
The magnetoresistive effect element has a configuration in which a laminated structure in which a pinned magnetic layer and a free magnetic layer are laminated via a nonmagnetic material layer is disposed on a substrate,
In the pinned magnetic layer, a first magnetic layer and a second magnetic layer in contact with the nonmagnetic material layer are laminated via a nonmagnetic intermediate layer, and the first magnetic layer and the second magnetic layer are antiparallel. It is a self-pinning type with fixed magnetization,
The second magnetic layer includes a first ferromagnetic material layer in contact with the nonmagnetic intermediate layer, an intermediate layer provided on the first ferromagnetic material layer, and the first magnetic layer provided on the intermediate layer. And a second ferromagnetic material layer magnetically coupled to the ferromagnetic material layer.
真空チャンバ内で、前記基板上に前記第１積層構造体を製造した後、前記第１積層構造体が配置されている前記基板上に前記第２積層構造体を製造することにより前記磁気センサは製造され、
前記第１積層構造体および前記第２積層構造体のいずれについても、
前記真空チャンバ内にて、前記第１磁性層、前記非磁性中間層、前記第１強磁性材料層および前記介在層を備える積層構造部を前記基板上に形成し、
前記介在層が最表層に位置する状態で前記積層構造部を前記真空チャンバから取り出して、前記積層構造部が備える前記第１磁性層および前記第１強磁性材料層を磁化し、
前記第１磁性層および前記第１強磁性材料層が磁化された前記積層構造部を前記真空チャンバ内に入れて、前記第２強磁性材料層以降の形成を行うこと
を特徴とする磁気センサの製造方法。 A method of manufacturing a magnetic sensor according to claim 3 or 4,
In a vacuum chamber, after manufacturing the first stacked structure on the substrate, the magnetic sensor is manufactured by manufacturing the second stacked structure on the substrate on which the first stacked structure is disposed. Manufactured,
For both the first laminated structure and the second laminated structure,
In the vacuum chamber, a laminated structure portion including the first magnetic layer, the nonmagnetic intermediate layer, the first ferromagnetic material layer, and the intervening layer is formed on the substrate.
With the intervening layer positioned at the outermost layer, the laminated structure is taken out of the vacuum chamber, and the first magnetic layer and the first ferromagnetic material layer provided in the laminated structure are magnetized.
The laminated structure portion in which the first magnetic layer and the first ferromagnetic material layer are magnetized is placed in the vacuum chamber, and the subsequent formation of the second ferromagnetic material layer is performed. Production method.
前記第１磁性層および前記第１強磁性材料層の磁化は、前記第１磁性層の磁化量と前記第１強磁性材料層の磁化量とに相違がある状態で行われる、請求項５に記載の磁気センサの製造方法。 The first magnetic layer and the second magnetic layer are set so that the magnetization amount of the first magnetic layer is equal to the magnetization amount of the second magnetic layer,
The magnetization of the first magnetic layer and the first ferromagnetic material layer is performed in a state where there is a difference between the magnetization amount of the first magnetic layer and the magnetization amount of the first ferromagnetic material layer. The manufacturing method of the magnetic sensor of description.
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| JP7261656B2 (en) | 2019-05-20 | 2023-04-20 | アルプスアルパイン株式会社 | Magnetic sensor and manufacturing method thereof |
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