JP6520638B2 - 駆動回路及び可変利得増幅器 - Google Patents
駆動回路及び可変利得増幅器 Download PDFInfo
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Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03G—CONTROL OF AMPLIFICATION
- H03G3/00—Gain control in amplifiers or frequency changers
- H03G3/20—Automatic control
- H03G3/30—Automatic control in amplifiers having semiconductor devices
- H03G3/3084—Automatic control in amplifiers having semiconductor devices in receivers or transmitters for electromagnetic waves other than radiowaves, e.g. lightwaves
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/32—Modifications of amplifiers to reduce non-linear distortion
- H03F1/3211—Modifications of amplifiers to reduce non-linear distortion in differential amplifiers
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
- H03F3/211—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/45—Differential amplifiers
- H03F3/45071—Differential amplifiers with semiconductor devices only
- H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
- H03F3/4508—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using bipolar transistors as the active amplifying circuit
- H03F3/45085—Long tailed pairs
- H03F3/45089—Non-folded cascode stages
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/45—Differential amplifiers
- H03F3/45071—Differential amplifiers with semiconductor devices only
- H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
- H03F3/4508—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using bipolar transistors as the active amplifying circuit
- H03F3/45098—PI types
- H03F3/45103—Non-folded cascode stages
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/45—Differential amplifiers
- H03F3/45071—Differential amplifiers with semiconductor devices only
- H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
- H03F3/4508—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using bipolar transistors as the active amplifying circuit
- H03F3/45174—Mirror types
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/45—Differential amplifiers
- H03F3/45071—Differential amplifiers with semiconductor devices only
- H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
- H03F3/45475—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using IC blocks as the active amplifying circuit
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03G—CONTROL OF AMPLIFICATION
- H03G1/00—Details of arrangements for controlling amplification
- H03G1/0005—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal
- H03G1/0017—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal the device being at least one of the amplifying solid state elements of the amplifier
- H03G1/0023—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal the device being at least one of the amplifying solid state elements of the amplifier in emitter-coupled or cascode amplifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03G—CONTROL OF AMPLIFICATION
- H03G1/00—Details of arrangements for controlling amplification
- H03G1/0005—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal
- H03G1/0035—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal using continuously variable impedance elements
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03G—CONTROL OF AMPLIFICATION
- H03G1/00—Details of arrangements for controlling amplification
- H03G1/0005—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal
- H03G1/0035—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal using continuously variable impedance elements
- H03G1/0082—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal using continuously variable impedance elements using bipolar transistor-type devices
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
- H04B10/50—Transmitters
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
- H04B10/50—Transmitters
- H04B10/501—Structural aspects
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/339—Pulse amplitude modulation being used in an amplifying circuit
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/462—Indexing scheme relating to amplifiers the current being sensed
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/45—Indexing scheme relating to differential amplifiers
- H03F2203/45241—Two dif amps realised in MOS or JFET technology, the dif amps being either both of the p-channel type or both of the n-channel type, are coupled in parallel with their gates
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/45—Indexing scheme relating to differential amplifiers
- H03F2203/45318—Indexing scheme relating to differential amplifiers the AAC comprising a cross coupling circuit, e.g. two extra transistors cross coupled
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/45—Indexing scheme relating to differential amplifiers
- H03F2203/45366—Indexing scheme relating to differential amplifiers the AAC comprising multiple transistors parallel coupled at their gates only, e.g. in a cascode dif amp, only those forming the composite common source transistor
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
- H04B1/02—Transmitters
- H04B1/04—Circuits
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
- H04B1/02—Transmitters
- H04B1/04—Circuits
- H04B2001/0408—Circuits with power amplifiers
- H04B2001/0416—Circuits with power amplifiers having gain or transmission power control
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Computer Networks & Wireless Communication (AREA)
- Signal Processing (AREA)
- Nonlinear Science (AREA)
- Amplifiers (AREA)
- Control Of Amplification And Gain Control (AREA)
Description
A(Q1,Q1B)=−RC/RE1…(1)
A(Q2,Q2B)=RC/RE2…(2)
ここで、抵抗RE1、RE2、RCのそれぞれの抵抗値をRE1、RE2、RCとし、抵抗RE1Bの抵抗値は抵抗RE1の抵抗値と等しく、抵抗RE2Bの抵抗値は抵抗RE2の抵抗値と等しく、抵抗RCBの抵抗値は抵抗RCの抵抗値と等しいとし、トランジスタQ1とQ1Bのサイズは同じで、トランジスタQ2とQ2Bのサイズも同じであるとしている。
AT=RC(1/RE2−1/RE1)…(3)
となる。
Claims (7)
- 利得制御信号によって設定された利得に応じて入力信号を増幅して出力信号を出力する可変利得増幅器であって、
第1の定電流を供給する第1の電流源と、
前記入力信号に応じて前記第1の定電流を一対の第1の電流に分流し、該一対の第1の電流の一方を第1の出力電流として出力する第1の差動対と、
前記入力信号に応じて第2の定電流を一対の第2の電流に分流し、該一対の第2の電流のうち前記第1の出力電流と逆相の電流を第2の出力電流として出力する第2の差動対と、
前記第1の出力電流から前記第2の出力電流を差し引いた電流を前記利得制御信号に応じて一対の第3の電流に分流する利得設定回路と、
前記一対の第3の電流の一方が流れて生じる電圧降下によって前記出力信号を生成する第1の出力抵抗と、
前記一対の第3の電流の他方に応じて前記第2の定電流を生成する電流回路と、
を備える可変利得増幅器と、
前記出力信号の振幅を検出して、前記振幅に応じた検出信号を生成する検出回路と、
前記検出信号に基づいて前記利得制御信号を生成する利得制御回路と、を有する駆動回路。 - 前記第1の差動対は、前記一対の第1の電流の他方を第4の出力電流としてさらに出力し、
前記第2の差動対は、前記一対の第2の電流のうち前記第2の出力電流として出力した電流の他方を第5の出力電流としてさらに出力し、
前記利得設定回路は、さらに前記第4の出力電流から前記第5の出力電流を差し引いた電流を前記利得制御信号に応じて一対の第6の電流に分流し、
前記可変利得増幅器は、前記一対の第6の電流の一方が流れて生じる電圧降下によって別の出力信号を生成する第2の出力抵抗をさらに備え、
前記電流回路は、前記一対の第3の電流の他方と前記一対の第6の電流の他方との和に応じて前記第2の定電流を生成し、
前記検出回路は、前記出力信号から前記別の出力信号を差し引いた差動出力信号の振幅を検出し、前記差動出力信号の振幅に応じて前記検出信号を生成する、請求項1記載の駆動回路。 - 前記電流回路は、第1のカレントミラー回路と第2のカレントミラー回路とを有し、
前記第1のカレントミラー回路は、前記一対の第3の電流の他方と前記一対の第6の電流の他方との和に比例した第1のミラー電流を出力し、
前記第2のカレントミラー回路は、前記第1のミラー電流に比例した第2の定電流を生成する、請求項2記載の駆動回路。 - 前記電流回路は、前記一対の第3の電流の他方と前記一対の第6の電流の他方とを足し合わせた電流が所定の値よりも小さいときに、前記第2の定電流を遮断する、請求項2又は3記載の駆動回路。
- 前記利得設定回路は、第3の差動対と第4の差動対とを有し、
前記第3の差動対は、前記利得制御信号が所定の参照電圧よりも大きいときは、前記第1の出力電流から前記第2の出力電流を差し引いた電流について、前記一対の第3の電流の一方が前記一対の第3の電流の他方よりも大きくなるように分流し、前記利得制御信号が前記所定の参照電圧よりも小さいときは、前記第1の出力電流から前記第2の出力電流を差し引いた電流について、前記一対の第3の電流の一方が前記一対の第3の電流の他方よりも小さくなるように分流し、
前記第4の差動対は、前記利得制御信号が所定の参照電圧よりも大きいときは、前記第4の出力電流から前記第5の出力電流を差し引いた電流について、前記一対の第6の電流の一方が前記一対の第6の電流の他方よりも大きくなるように分流し、前記利得制御信号が所定の参照電圧よりも小さいときは、前記第4の出力電流から前記第5の出力電流を差し引いた電流について、前記一対の第6の電流の一方が前記一対の第6の電流の他方よりも小さくなるように分流する、請求項2〜4のいずれか1項記載の駆動回路。 - 前記第2の定電流の大きさは、前記第1の定電流の大きさよりも小さい、請求項1〜5のいずれか1項記載の駆動回路。
- 利得制御信号によって設定された利得に応じて入力信号を増幅して出力信号を出力する可変利得増幅器であって、
第1の定電流を供給する第1の電流源と、
前記入力信号に応じて前記第1の定電流を一対の第1の電流に分流し、該一対の第1の電流の一方を第1の出力電流として出力する第1の差動対と、
前記入力信号に応じて第2の定電流を一対の第2の電流に分流し、該一対の第2の電流のうち前記第1の出力電流と逆相の電流を第2の出力電流として出力する第2の差動対と、
前記第1の出力電流から前記第2の出力電流を差し引いた電流を前記利得制御信号に応じて一対の第3の電流に分流する利得設定回路と、
前記一対の第3の電流の一方が流れて生じる電圧降下によって前記出力信号を生成する第1の出力抵抗と、
前記一対の第3の電流の他方に応じて前記第2の定電流を生成する電流回路と、を備える可変利得増幅器。
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JP2015207836A JP6520638B2 (ja) | 2015-10-22 | 2015-10-22 | 駆動回路及び可変利得増幅器 |
US15/297,892 US9973165B2 (en) | 2015-10-22 | 2016-10-19 | Variable gain amplifier and driver implementing the same |
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US10218324B2 (en) * | 2016-12-30 | 2019-02-26 | Texas Instruments Incorporated | Differential input stage with wide input signal range and stable transconductance |
US10291327B1 (en) * | 2017-11-29 | 2019-05-14 | Electronics And Telecommunications Research Institute | Optical signal generating apparatus and operating method thereof |
CN110971205B (zh) * | 2018-09-30 | 2022-08-09 | 华为技术有限公司 | 一种高线性度的可变增益放大器以及电子装置 |
US10955691B2 (en) * | 2019-06-13 | 2021-03-23 | Elenion Technologies, Llc | Dual loop bias circuit with offset compensation |
CN116325489A (zh) * | 2020-08-19 | 2023-06-23 | 京瓷国际有限公司 | 宽带放大器线性化技术 |
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JPS62245810A (ja) * | 1986-04-18 | 1987-10-27 | Fujitsu Ltd | 直流レベル安定化回路 |
DE69028803T2 (de) | 1989-05-31 | 1997-03-20 | Toshiba Kawasaki Kk | Linearisierter Differenzverstärker |
JPH05343939A (ja) * | 1992-06-05 | 1993-12-24 | Fujitsu Ltd | 光受信回路 |
JP2540764B2 (ja) * | 1993-11-15 | 1996-10-09 | 日本電気株式会社 | マルチプライヤ |
US6684065B2 (en) | 1999-12-20 | 2004-01-27 | Broadcom Corporation | Variable gain amplifier for low voltage applications |
JP2008011051A (ja) * | 2006-06-28 | 2008-01-17 | Matsushita Electric Ind Co Ltd | 差動演算増幅器 |
US8848824B2 (en) * | 2008-03-07 | 2014-09-30 | Andrew M. Teetzel | High efficiency RF system linearizer using controlled complex nonlinear distortion generators |
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