JP6507674B2 - Organic semiconductor device and method of manufacturing the same - Google Patents

Description

  The present invention relates to an organic semiconductor device having an organic semiconductor film and a method of manufacturing the same.

  Conventionally, as an organic semiconductor device, for example, an organic semiconductor transistor using an organic semiconductor film is known. Specifically, this organic semiconductor transistor is manufactured by the following method.

  First, an insulating film is formed on a substrate, and then an organic semiconductor film is formed in a region where a channel region is to be formed, and is patterned. Next, a source electrode and a drain electrode are formed at both ends of the organic semiconductor film. After that, a gate insulating film is formed to cover the organic semiconductor film, the source electrode, and the drain electrode. Then, by forming a gate electrode at a desired position of the gate insulating film, an organic semiconductor device provided with an organic semiconductor film in which a channel region is formed between a source electrode and a drain electrode is completed.

  In such a method of manufacturing an organic semiconductor device, for example, the steps of forming a source electrode and a drain electrode on an organic semiconductor film are performed by applying an ink containing an electrode material and then drying it. At this time, in the organic semiconductor film serving as a base for forming the source electrode and the drain electrode, a portion for forming the source electrode and the drain electrode is made to be a lyophilic region while the periphery is made a liquid repellent region. The ink is applied only to the portion where the source electrode and the drain electrode are to be formed. Specifically, when the base is an organic semiconductor film, since the surface is liquid repellent, the liquid repellent area and the lyophilic area are formed by substituting the formation positions of the source electrode and the drain electrode with lyophilicity. Configured.

  As a method of replacing such a liquid repellent area with a lyophilic area, there is a method of irradiating an ultraviolet ray as shown in Patent Document 1 and patterning a surface state.

JP 2005-322699 A

  However, in the method of patterning by ultraviolet light described in Patent Document 1, although the bonding strength between the source electrode or drain electrode and the organic semiconductor film serving as the base is high, the irradiated area is oxidized by ozone generated by the ultraviolet light. , The electrical conductivity will be reduced. Therefore, when the surface state of the organic semiconductor film is patterned by ultraviolet light, electrical conductivity is required in a region where electrical conductivity is required between the organic semiconductor film and the source electrode and the drain electrode stacked on the organic semiconductor film. There is a problem that conductivity can not be obtained.

  Here, when forming the second film on the first film, an organic semiconductor film is used as an example in the case of forming a liquid repellent SAM and then substituting it for lyophilicity by ultraviolet irradiation. The case of forming a metal film such as a source electrode or a drain electrode on the top has been described. The present invention is not limited to this, and in the case where an organic semiconductor film is formed on a metal film, a metal film is further formed on a metal film, or an organic semiconductor film is further formed on an organic semiconductor film, The same problem as described above also occurs when the electrical conductivity in the case is required.

  An organic semiconductor device having a structure capable of obtaining strong bonding strength while improving the electrical conductivity between a first film and a second film formed thereon in view of the above-described point of the present invention. And it aims at providing the manufacturing method.

In order to achieve the above object, the invention according to claims 1 to 11 has a first film and a second film electrically conductively joined to the first film, A second film is an organic semiconductor device formed by applying and drying an ink containing a constituent material of the second film, wherein the contact surface of the first film with the second film is repellent A liquid repellent area in which the ink is repelled by the area in which the liquid layer is formed and the removed area is configured to have a liquid repellent area in which the ink is wetted and a lyophilic area in which the ink is wetted. A liquid region is disposed, and a second film bonded to the lyophilic region is also disposed over the lyophobic region disposed between the lyophilic regions, The second film is characterized in that it covers the entire area of all the liquid repellent regions disposed inside the outer periphery of the lyophilic region at the contact surface . ing.

  As described above, when bonding the first film and the second film at the contact surface, the contact surface is basically constituted by the lyophilic region, and the liquid repellent region is formed between the lyophilic regions. To be placed. Then, the ink containing the electrode material applied to the lyophilic area 9 is applied across the lyophobic area disposed between the lyophilic areas.

  With such a configuration, the second film is bonded by the strong bonding strength in the lyophilic area, and in the liquid repellent area, the electric conductivity is good even though the strong bonding strength can not be obtained. It is made to contact. Thereby, it is possible to obtain an organic semiconductor device having a structure capable of obtaining strong bonding strength while improving the electrical conductivity between the first film and the second film formed thereon. .

  In addition, the code | symbol in the parenthesis of each said means shows an example of the correspondence with the specific means as described in embodiment mentioned later.

FIG. 1 is a top layout view of an organic semiconductor transistor according to a first embodiment of the present invention. It is II-II sectional drawing of FIG. It is an enlarged view of the contact surface 8 of the organic-semiconductor transistor shown in FIG. It is sectional drawing which showed the manufacturing process of the organic-semiconductor transistor shown in FIG. It is the expanded sectional view which showed the manufacturing process at the time of forming the lyophilic area | region 9 and the liquid repellant area | region 10 by SAM process and ultraviolet irradiation. It is the figure which showed the opening pattern of the photomask used at the time of ultraviolet irradiation. It is the figure which showed the wetting state after apply | coating the ink 13, after lyophilic area | region 9 and liquid repelling area | region 10 were divided using the photomask of FIG. 6 (a)-(d). It is an enlarged view of the contact surface 20 of the organic-semiconductor transistor concerning 1st Embodiment of this invention. It is sectional drawing of the organic-semiconductor transistor concerning 3rd Embodiment of this invention. It is an enlarged view of the contact surface 30 of the organic-semiconductor transistor shown in FIG. It is the figure which showed the example of a layout of the lyophilic area | region 9 and the liquid repellant area | region 10 in the contact surface 8 demonstrated by other embodiment. It is the figure which showed the example of a layout of the lyophilic area | region 9 and the liquid repellant area | region 10 in the contact surface 8 demonstrated by other embodiment. It is the figure which showed the example of a layout of the lyophilic area | region 9 and the liquid repellant area | region 10 in the contact surface 8 demonstrated by other embodiment. It is the figure which showed the example of a layout of the lyophilic area | region 9 and the liquid repellant area | region 10 in the contact surface 8 demonstrated by other embodiment. It is the figure which showed the example of a layout of the lyophilic area | region 9 and the liquid repellant area | region 10 in the contact surface 8 demonstrated by other embodiment.

  Hereinafter, an embodiment of the present invention will be described based on the drawings. In the following embodiments, parts that are the same as or equivalent to each other will be described with the same reference numerals.

First Embodiment
A top gate bottom contact organic semiconductor transistor will be described as an example of the organic semiconductor device according to an embodiment of the present invention. The organic semiconductor transistor described in the present embodiment is applied to, for example, an organic EL element or the like.

  First, the configuration of the organic semiconductor transistor according to the present embodiment will be described with reference to FIGS. 1 and 2.

  The organic semiconductor transistor concerning this embodiment is comprised by the top gate bottom contact structure, as FIG. 2 shows. For example, each component of the organic semiconductor transistor is formed on the surface of the substrate 1 using the insulating substrate 1 made of a glass substrate or a film (ethylene naphthalate (PEN) or polyimide (PI)). doing.

  An organic semiconductor thin film 3 is formed at a desired position on the substrate 1 via an insulating film 2 as necessary. For example, the organic semiconductor thin film 3 is formed by applying and drying an ink containing an organic semiconductor material. As the organic semiconductor material, for example, a pentacene-based or thiophene-based material is used, and an ink containing the organic semiconductor material is formed by dissolving the organic semiconductor material in an organic solvent. In the case of the present embodiment, as shown in FIG. 1, the organic semiconductor thin film 3 is configured in a square shape.

  The insulating film 2 may not be provided when the substrate 1 is made of an insulating material, in which case the organic semiconductor thin film 3 is formed directly on the substrate 1. Just do it.

  Moreover, the source electrode 4 and the drain electrode 5 are mutually spaced apart and arrange | positioned at the both ends of the organic semiconductor thin film 3, specifically two opposing sides among the organic semiconductor thin film 3 comprised by square shape. . The source electrode 4 and the drain electrode 5 are formed of, for example, a metal made of an electrode material such as gold or silver.

Further, a gate insulating film 6 is formed to cover the surfaces of the organic semiconductor thin film 3, the source electrode 4 and the drain electrode 5. The gate insulating film 6 is made of an inorganic material such as alumina (Al ₂ O ₃ ).

  Then, a position of the gate insulating film 6 facing the organic semiconductor thin film 3, specifically, a portion of the organic semiconductor thin film 3 located between the source electrode 4 and the drain electrode 5 is used as a channel region. Gate electrodes 7 are formed at opposite positions. The gate electrode 7 is made of, for example, chromium (Cr) or molybdenum (Mo), and has, for example, a rectangular shape.

  The organic semiconductor transistor concerning this embodiment is comprised by such composition. In the organic semiconductor transistor configured in this manner, for example, among the surfaces of the organic semiconductor thin film 3 and the like serving as the base, the electrical conduction is obtained while obtaining high bonding strength at the contact surface 8 with the source electrode 4 or the drain electrode 5. It is necessary that good bonding is performed. Therefore, in the present embodiment, such a bonding is performed by applying the following structure to the contact surface 8.

  Specifically, as shown in FIG. 3, an ink containing a component to be the contact surface 8 in the surface of the organic semiconductor thin film 3 to be the base, basically, a constituent material of the source electrode 4 and the drain electrode 5 is It comprises the lyophilic area 9 which gets wet, and the periphery thereof is made the lyophobic area 10 where ink is repelled. However, when the whole area of the portion to be the contact surface 8 is a lyophilic area 9, although the bonding strength is increased by the ultraviolet irradiation at the time of substituting the lyophobic area 10 with the lyophilic area 9, the electric power by oxidation It causes a decrease in conductivity.

  For this reason, in the present embodiment, as shown in FIG. 3, the contact surface 8 is constituted by the lyophilic area 9 and the liquid repellent area 10, and the ink containing the electrode material applied to the lyophilic area 9 is The liquid repellent region 10 disposed between the lyophilic regions 9 is also applied across the liquid repellent region 10. With such a configuration, the source electrode 4 and the drain electrode 5 are joined by the strong bonding strength in the lyophilic area 9 and the electric conductivity in the liquid repellent area 10 even if the strong bonding strength is not obtained. Contact in good condition.

  Therefore, in the contact surface 8, a high bonding strength is obtained between the organic semiconductor thin film 3 and the source electrode 4 or the drain electrode 5, and a junction with good electrical conductivity is obtained.

  More specifically, in the case of this embodiment, a plurality of parallel straight lines in which the lyophilic regions 9 are arranged at equal intervals form a grid-like layout in which the plurality of parallel straight lines cross each other perpendicularly, and the region in the grid is a liquid repellent region. It consists of ten. For example, the width W2 of the region in the lattice that is the liquid repellent region 10 is less than three times the width W1 of the plurality of parallel linear portions that are the lyophilic regions 9, for example, the width W1 is 5 μm The width W2 is set to 5 to 10 μm. By setting the widths W1 and W2 in this manner, when the source electrode 4 and the drain electrode 5 are formed, the ink containing the electrode material is applied across the liquid repellent region 10 as in the present embodiment. An organic semiconductor transistor is configured.

  Then, the manufacturing method of the organic-semiconductor transistor of this embodiment comprised as mentioned above is demonstrated.

  First, as shown in FIG. 4A, the insulating film 2 is formed on the surface of the substrate 1 as necessary, and then the organic semiconductor thin film 3 is formed thereon. The organic semiconductor thin film 3 can be formed, for example, by a coating method. In that case, SAM processing is performed on the surface of the insulating film 2 (base 1 in the case where the insulating film 2 is not formed) to be a base to form a liquid repellent SAM layer, and then ultraviolet irradiation or the like is performed. The formation planned position of the organic semiconductor thin film 3 is replaced with lyophilic. Then, the ink containing the organic semiconductor material is applied and then dried. Thus, the organic semiconductor thin film 3 can be formed.

  Subsequently, the source electrode 4 and the drain electrode 5 are formed at both ends of the organic semiconductor thin film 3. Specifically, first, as shown in FIG. 5A, the surface of the part to be the base is subjected to SAM processing to form the liquid repellent SAM layer 11. Although the organic semiconductor thin film 3 is included in part of the base, since the surface of the organic semiconductor thin film 3 is inherently liquid repellent, it is not necessary to perform SAM processing on the surface of the organic semiconductor thin film 3. The SAM process for forming the liquid repellent SAM layer 11 is performed using, for example, trimethoxy (1 h, 1 h, 2 h, 2 h-perfluorooctyl) silane. In addition, trimethoxysilane used for the SAM process illustrated here was shown as an example of what can form the liquid repellant SAM layer 11 on oxides, such as glass and an alumina. In the case of forming the liquid repellent SAM layer 11 on metal, other materials such as thiol-based SAM such as 1-hexanethiol can be used.

  Next, as shown in FIG. 5B, ultraviolet irradiation is performed using the mask 12 in which the planned formation positions of the source electrode 4 and the drain electrode 5 are opened, whereby the liquid repellent SAM layer 11 and the organic semiconductor thin film 3 are obtained. Remove the liquid repellent layer on the surface of For example, by irradiation with ultraviolet light, oxygen in the atmosphere is replaced with ozone and becomes ozone, which becomes active oxygen and combines with liquid repellent SAM layer 11 and C constituting the liquid repellent layer and the like to be released to the outside. As a result, the liquid repellent SAM layer 11 and the liquid repellent layer are eliminated in the region irradiated with ultraviolet light, and the liquid repellent region 9 is substituted, and the portion where the liquid repellent SAM layer 11 and the liquid repellent layer are left is liquid repellent. Region 10 is obtained.

  Thereafter, as shown in FIG. 5C, the ink 13 containing an electrode material for forming the source electrode 4 and the drain electrode 5 is applied. At this time, the ink 13 basically does not get wet on the liquid repellent area 10 and gets wet on the lyophilic area 9. However, since the lyophilic regions 9 are disposed on both sides of the lyophobic region 10, the ink 13 wetted on the lyophilic regions 9 on both sides is connected on the lyophobic regions 10, and the lyophobic regions 10 are formed. The ink 13 is also disposed on the upper side. By drying the ink 13 in this state, the source electrode 4 and the drain electrode 5 are formed.

  Thus, the source electrode 4 and the drain electrode 5 can be formed. The subsequent steps are the same as in the prior art, and after the gate insulating film 6 is formed to cover the organic semiconductor thin film 3, the source electrode 4 and the drain electrode 5, the gate electrode 7 is formed and patterned by patterning. A semiconductor transistor is completed.

  As described above, in the present embodiment, when the organic semiconductor thin film 3 is bonded to the source electrode 4 and the drain electrode 5 at the contact surface 8, the contact surface 8 is basically formed of the lyophilic region 9. Meanwhile, the lyophobic area 10 is disposed between the lyophilic areas 9. Then, the ink containing the electrode material applied to the lyophilic region 9 is applied across the liquid repellent region 10 disposed between the lyophilic regions 9. With such a configuration, the source electrode 4 and the drain electrode 5 are joined by the strong bonding strength in the lyophilic area 9 and the electric conductivity in the liquid repellent area 10 even if the strong bonding strength is not obtained. Contact in good condition.

  Therefore, in forming the source electrode 4 and the drain electrode 5 corresponding to the second film on the organic semiconductor thin film 3 corresponding to the first film, the junction strength between the two is improved while the electrical conductivity between them is improved. It is possible to obtain

  Further, in the present embodiment, the lyophilic area 9 in the contact surface 8 is formed in a lattice shape, and the inside of the lattice is made to be the liquid repellent area 10. Then, the width W1 of the plurality of parallel linear portions to be the lyophilic region 9 is 5 μm, and the width W2 of the region in the lattice to be the liquid repellent region 10 is 5 to 10 μm. These dimensionings are based on the following experiments.

  6 (a) to 6 (d) are diagrams showing an opening pattern of a photomask used at the time of ultraviolet irradiation, and the width W1 after formation is changed by changing the dimensions of portions corresponding to the widths W1 and W2, respectively. , The dimension of W2 is changed. 7 (a) to 7 (d) show that after the lyophilic region 9 and the liquid repellent region 10 are divided using the photomasks of FIGS. 6 (a) to 6 (d), respectively, the ink 13 is applied. Indicates a wet condition.

  As shown in FIG. 6A, in the case of using a photomask having an opening that makes the entire area of the contact surface 8 a lyophilic area 9 as in the prior art, the ink 13 covers the entire area of the contact surface 8. It gets wet. On the other hand, as shown in FIG. 6B, in the layout of the present embodiment, the ink 13 is wetted over the entire area of the contact surface 8 even when the widths W1 and W2 are both 5 μm. . Similarly, as shown in FIG. 6C, even when the width W1 is 5 μm and the width W2 is 10 μm in the layout of the present embodiment, the ink 13 is in a wet state on the entire contact surface 8. However, as shown in FIG. 6D, in the layout of this embodiment, when the width W1 is 5 μm and W2 is 15 μm, the ink 13 does not get wet in the entire area of the contact surface 8 and solidifies in the central portion. It was in a state of

  As described above, when the width W2 of the lyophobic area 10 is three times the width W1 of the lyophilic area 9, the area in which the ink 13 is wetted becomes a part of the contact surface 8. Even in this case, since the ink 13 is wet so as to extend over the liquid repellent area 10, although the above effect can be obtained to some extent, it is preferable that W2 be less than 3 times the width W1. . Therefore, in the present embodiment, the width W2 is less than three times the width W1, and for example, the width W1 is 5 μm and the width W2 is 5 to 10 μm. Thereby, it is possible to more accurately obtain the above effect.

  Although the case where the width W1 of the lyophilic region 9 is 5 μm is described here, the dimension may be smaller or larger than this. However, since the lyophilic region 9 is a portion where the electrical conductivity is not good, it is preferable to set the width W1 to 5 μm or less. At present, the pattern formation limit can be formed to a size of at least about 3 μm, and the width W1 can be reduced to at least about the dimension of the pattern formation limit. However, the above effects can be obtained without being limited to the pattern formation limit. . Therefore, the width W1 is not particularly limited as long as the lyophilic region 9 is formed and the ink is wet, and the width W1 may be larger than 0 μm.

Second Embodiment
A second embodiment of the present invention will be described. The present embodiment is the same as the first embodiment, except that the target of the portion for obtaining strong bonding strength is changed while obtaining the electrical conductivity with respect to the first embodiment. Only the differences from the form will be described.

  In the first embodiment, one embodiment of the present invention is applied to the contact portion between the organic semiconductor thin film 3 and the source electrode 4 and the drain electrode 5. On the other hand, in the present embodiment, when the organic semiconductor thin film 3 is formed by multiple ink applications when the thickness of the organic semiconductor thin film 3 is increased, the bonding strength is high while obtaining electrical conductivity between the respective layers. To get the

  That is, when the organic semiconductor thin film 3 is composed of a plurality of layers, as shown in FIG. 8, the surface of the lower layer portion to be the base is the contact surface 20, and the contact surface 20 and the surrounding base layer are irradiated with ultraviolet light. By applying, the lyophilic area 21 and the liquid repellent area 22 are configured. The layout of the lyophilic area 21 and the lyophobic area 22 is the same as the layout of the lyophilic area 9 and the lyophobic area 10 described in the first embodiment.

  In this way, when the organic semiconductor thin film 3 is formed by superimposing a plurality of layers by applying the ink a plurality of times to gain a film thickness, each layer obtains electrical conductivity while obtaining strong bonding strength. It is possible to make bonding possible. As described above, even when the first film is formed of an organic semiconductor and an organic semiconductor is formed thereon as a second film, the same effect as that of the first embodiment can be obtained.

  Although the case where the first film is formed of an organic semiconductor and the organic semiconductor is formed thereon as a second film is described here, the first film is formed of a metal and the second film is formed of a metal and a metal. The same configuration can be applied to the case of

  For example, in the case where the electrodes 4, 5, 7 are formed by applying the ink plural times while increasing the thickness of the source electrode 4, the drain electrode 5 or the gate electrode 7, the electric conductivity is obtained in each layer. Ensure strong bond strength. That is, also in the case where the source electrode 4, the drain electrode 5, or the gate electrode 7 is formed of a plurality of layers, the contact surface 20 is formed of the lyophilic region 21 and the liquid repellent region 22 as in FIG. The layout of the lyophilic area 21 and the lyophobic area 22 is the same as the layout of the lyophilic area 9 and the lyophobic area 10 described in the first embodiment. Thereby, the same effect as described above can be obtained also in the case where the second film is also made of metal while the first film is made of metal. The metal for forming the source electrode 4, the drain electrode 5, the gate electrode 7, etc. has a lyophilic surface, so that a liquid repellent SAM layer is formed by performing an SAM process, By irradiating ultraviolet light, the lyophilic area 9 and the liquid repellent area 10 are formed.

Third Embodiment
A third embodiment of the present invention will be described. The present embodiment is the same as the first embodiment except that the formation positions of the organic semiconductor thin film 3 and the source electrode 4 and the drain electrode 5 are changed with respect to the first embodiment. Only the differences from the embodiment will be described.

  As shown in FIG. 9, in the present embodiment, the source electrode 4 and the drain electrode 5 are formed apart from each other on the insulating film 2 formed on the base material 1, and the source electrode 4 and the drain are formed. An organic semiconductor thin film 3 is formed on the electrode 5 so as to straddle them. Then, the gate insulating film 6 is formed on the organic semiconductor thin film 3, and the gate electrode 7 is formed on the gate insulating film 6.

  In such a structure, it is necessary to obtain a high bonding strength while obtaining electrical conductivity on the contact surface between the source electrode 4 or the drain electrode 5 and the organic semiconductor thin film 3. For this reason, as shown in FIG. 10, the contact surface 30 of the source electrode 4 and the drain electrode 5 with the organic semiconductor thin film 3 is configured by the lyophilic region 31 and the liquid repellent region 32 as shown in FIG. Do. Since the metal for forming the source electrode 4 and the drain electrode 5 is lyophilic on the surface, the liquid repellent SAM layer is formed by performing the SAM process, and then the ultraviolet ray is irradiated to form the parent. A liquid area 31 and a liquid repellent area 32 are formed. The layout of the lyophilic area 31 and the lyophobic area 32 is the same as the layout of the lyophilic area 9 and the lyophobic area 10 described in the first embodiment.

  As described above, in the present embodiment, when the source electrode 4 and the drain electrode 5 and the organic semiconductor thin film 3 are bonded at the contact surface 30, the contact surface 30 is basically configured by the lyophilic region 31, The lyophobic area 32 is disposed between the lyophilic areas 31. Even with such a configuration, the same effects as those of the first embodiment can be obtained.

  Therefore, in forming the organic semiconductor thin film 3 corresponding to the second film on the source electrode 4 and the drain electrode 5 corresponding to the first film, the junction strength between them is improved while the electric conductivity is improved. It is possible to obtain That is, even in the case where an organic semiconductor is formed as a second film on top of the first film as a metal, the same effect as that of the first embodiment can be obtained.

(Other embodiments)
The present invention is not limited to the above-described embodiment, and appropriate modifications can be made within the scope of the claims. Of course, as long as it is an organic semiconductor device provided with an organic semiconductor, the present invention can be applied to devices other than transistors.

  For example, although the top gate bottom contact structure has been described as an example in each of the above embodiments, the present invention can be applied to an organic semiconductor device having an organic semiconductor transistor having a bottom gate top contact structure.

  In each of the above embodiments, an example of the first film and the second film is shown. However, what is shown in each embodiment is merely an example. That is, when forming an organic semiconductor thin film on an organic semiconductor thin film by ink application, forming metal on a metal, forming metal on an organic semiconductor thin film, forming an organic semiconductor thin film on metal, You may apply as a 1st film | membrane and a 2nd film | membrane, respectively. For example, as an example of forming a metal on metal, it is not limited to the case of increasing the thickness of the source electrode 4, the drain electrode 5 or the gate electrode 7, but in the case of forming a lead wire electrically connected to each of them. The present invention is also applicable to

  Furthermore, although the grid-like thing was mentioned and demonstrated as an example of a layout of the lyophilic area | region and liquid repellant area | region which are formed in a contact surface, another layout may be sufficient.

  For example, as shown in FIG. 11, the lyophilic regions 9 are formed in a plurality of strips and arranged in parallel by arranging them in parallel, and the lyophobic regions 10 are disposed between the lyophilic regions 9. The layout may be In this case, the longitudinal direction of the lyophilic regions 9 in the form of stripes may be directed in any direction, and may be, for example, either the vertical direction or the horizontal direction of the surface of the organic semiconductor transistor shown in FIG. .

  Further, as shown in FIG. 12, the lyophilic regions 9 may be arranged concentrically, and the lyophobic region 10 may be arranged therebetween. In that case, two circular lyophilic regions 9 may be provided, and the lyophilic region 9 on the outer peripheral side may be formed so as to cover the entire area of the contact surface, or three or more circular parents. The liquid regions 9 may be arranged concentrically, and the lyophobic regions 10 may be arranged between the respective lyophilic regions 9. Furthermore, a plurality of lyophilic regions 9 arranged concentrically as shown in FIG. 12 may be arranged in an array. Similarly, as shown in FIG. 13, the layout may be such that the lyophilic region 9 is disposed in a spiral shape. Also in this case, the lyophilic regions 9 may be disposed in the entire area of the contact surface, or may be disposed in a plurality of arrays.

  Further, as shown in FIG. 14, the lyophilic regions 9 may be formed in a lattice, and the liquid repellent regions 10 formed in the lattice may be formed in a zigzag. Further, the shape of the liquid repellent area 10, which is a grid, does not have to be square, and may be, for example, dot-like (circular) as shown in FIG.

  In the present specification, the lyophilic property means that the contact angle between the surface of the ink and the surface of the base is 60 degrees or more when the ink to be coated is wet. Further, the liquid repellency indicates that the contact angle between the surface of the ink and the surface of the base is 10 degrees or less when the ink to be coated is wet.

REFERENCE SIGNS LIST 1 base material 3 organic semiconductor thin film 4 source electrode 5 drain electrode 6 gate insulating film 7 gate electrode 8, 20, 30 contact surface 9, 21, 31 lyophilic region 10, 22, 32 lyophobic region 11 lyophobic SAM Layer 13 ink

Claims (12)

An ink comprising a first film and a second film electrically conductively bonded to the first film, the second film containing a constituent material of the second film; An organic semiconductor device formed by applying and drying it,
A contact surface of the first film with the second film is a lyophobic region where the ink is repelled by the region where the lyophobic layer is formed and the removed region, and the lyophilic property where the ink is wetted And the lyophilic region is disposed on both sides of the lyophobic region, and the second film bonded to the lyophilic region is the lyophilic region. It is also disposed over the liquid repellent area disposed between the liquid areas,
An organic semiconductor device characterized in that the second film covers the whole area of all the liquid repellent regions disposed inside the outer contour of the lyophilic region on the contact surface.   The organic semiconductor device according to claim 1, wherein the first film is made of an organic semiconductor, and the second film is made of a metal. An organic semiconductor thin film (3), a source electrode (4) and a drain electrode (5) spaced apart from each other on the both sides of the organic semiconductor thin film, and the organic semiconductor thin film on the base material (1) A portion of the thin film disposed between the source electrode and the drain electrode is a channel region, and a gate insulating film (6) provided in contact with the channel region and the gate insulating film interposed therebetween And an organic semiconductor transistor comprising a gate electrode (7) disposed on the opposite side,
The first film is the organic semiconductor thin film, the second film is the source electrode and the drain electrode, and the contact surface (8) of the organic semiconductor thin film with the source electrode and the drain electrode is provided. The organic semiconductor device according to claim 2, wherein the lyophilic region (9) and the lyophobic region (10) are formed.   The organic semiconductor device according to claim 1, wherein the first film and the second film are made of an organic semiconductor. An organic semiconductor thin film (3), a source electrode (4) and a drain electrode (5) spaced apart from each other on the both sides of the organic semiconductor thin film, and the organic semiconductor thin film on the base material (1) A portion of the thin film disposed between the source electrode and the drain electrode is a channel region, and a gate insulating film (6) provided in contact with the channel region and the gate insulating film interposed therebetween And an organic semiconductor transistor comprising a gate electrode (7) disposed on the opposite side,
The first film and the second film are the organic semiconductor thin film, and the organic semiconductor thin film is formed by applying the ink a plurality of times to form a plurality of layers, and the surface of each layer is a contact surface (20) The organic semiconductor device according to claim 4, wherein the lyophilic area (21) and the liquid repellent area (22) are formed on the contact surface.   The organic semiconductor device according to claim 1, wherein the first film and the second film are made of metal. An organic semiconductor thin film (3), a source electrode (4) and a drain electrode (5) spaced apart from each other on the both sides of the organic semiconductor thin film, and the organic semiconductor thin film on the base material (1) A portion of the thin film disposed between the source electrode and the drain electrode is a channel region, and a gate insulating film (6) provided in contact with the channel region and the gate insulating film interposed therebetween And an organic semiconductor transistor comprising a gate electrode (7) disposed on the opposite side,
The first film and the second film are the gate electrode or the source electrode and the drain electrode, and the gate electrode or the source electrode and the drain electrode are formed by applying a plurality of times to the ink. The lyophilic area (21) and the lyophobic area (22) are formed on the contact surface, with the surface of each layer as the contact surface (20). 6. The organic semiconductor device according to 6.   The organic semiconductor device according to claim 1, wherein the first film is made of a metal, and the second film is made of an organic semiconductor. An organic semiconductor thin film (3), a source electrode (4) and a drain electrode (5) spaced apart from each other on the both sides of the organic semiconductor thin film, and the organic semiconductor thin film on the base material (1) A portion of the thin film disposed between the source electrode and the drain electrode is a channel region, and a gate insulating film (6) provided in contact with the channel region and the gate insulating film interposed therebetween And an organic semiconductor transistor comprising a gate electrode (7) disposed on the opposite side,
The first film is the source electrode and the drain electrode, and the second film is the organic semiconductor thin film, and a contact surface (30) of the source electrode and the drain electrode with the organic semiconductor thin film The organic semiconductor device according to claim 8, wherein the lyophilic area (31) and the liquid repellent area (32) are formed.   10. The organic semiconductor device according to any one of claims 1 to 9, wherein the lyophilic region is any one of lattice, stripe, concentric and spiral.   The organic semiconductor device according to any one of claims 1 to 10, wherein a dimension of the lyophilic region is 5 μm or less, and a dimension of the liquid repellent region is 10 μm or less. A method of manufacturing an organic semiconductor device according to any one of claims 1 to 11,
Forming a liquid repellent self-assembled film (11) for forming the liquid repellent region as the liquid repellent layer on the first film;
Forming a lyophilic area by irradiating the portion of the self-assembled film corresponding to the lyophilic region with ultraviolet light to remove the self-assembled film;
An ink containing a constituent material of the second film is applied on the lyophobic region constituted by the self-assembled film and the lyophilic region constituted by removing the self-assembled film. And drying the ink to form the second film.
In the step of forming the second film, the ink covers the entire area of the liquid repellent area which is constituted by the self-assembled film and which is disposed inside the outer periphery of the lyophilic area. A method of manufacturing an organic semiconductor device comprising drying the ink according to

Images