JP6506590B2 - Electrical contacts and sockets for electrical components - Google Patents

Description

  The present invention relates to an electrical contact for electrically connecting a first electrical component such as a semiconductor device (hereinafter referred to as "IC package") to a second electrical component such as a wiring board, and an electrical component using this electrical contact For the socket.

  Conventionally, as a socket for electrical components of this type (hereinafter referred to as "IC socket"), for example, the one described in Patent Document 1 below is known.

  In Patent Document 1, an IC socket is disposed on a wiring substrate, and an IC package is accommodated in the IC socket. Then, using the wire probe provided in the IC socket, the electrode of the wiring board and the electrode of the IC package are electrically connected.

  In addition, these wire probes are embedded in the elastomer material layer in a state of being formed into ball-shaped contacts at both ends and deformed into a predetermined shape.

Patent No. 3206922

  In such an IC socket, when the contact portion of the wire probe and the terminal of the IC package are electrically connected, it is necessary to sufficiently ensure the stability and reliability of the connection.

However, when such a conventional IC socket is used repeatedly over a long period of time, the tip of the contact portion of the wire probe is worn and the contact area is increased. As a result, the material for forming the IC package pin, easily equal adhered to the contact portion of the wire probe, for this, increases the electrical resistance of the contact portion, stability and reliability of electrical connection can There is a possibility that it can not be secured. For example, when terminals of this IC package are formed of lead-free solder (tin) and burn-in tests are repeatedly performed under a high temperature for many IC packages, the tip of the contact portion of the wire probe is worn away As the area increases, the tin melts and adheres to the contacts of the wire probe and alloys. As a result, the contact resistance between the wire probe and the terminal of the IC package is increased, and the reliability of the operation test or the like is impaired.

  Therefore, the present invention can sufficiently reduce the contact resistance when contacting the first electric component, and the electric contact whose contact resistance does not increase in long-term use, and the electric contact using the electric contact It is an object to provide a component socket.

In order to solve such problems, the invention according to claim 1 electrically connects a first electrode provided in a first electrical component and a second electrode provided in a second electrical component. An electric contact, a base material made of a spring wire , a first contact portion contacting the first electrode of the first electric component, and the second contact of the second electric component The base material having a second contact portion contacting with the electrode of the above, and a spring portion for causing the first contact portion to contact with the first electrode of the first electric component at a predetermined contact pressure; of the base material, the previously formed Symbol the springy wire on only the front end portion of the first contact portion, and wear resistance contact layer is high wear resistance than the spring resistance wire, the base material, wherein and the distal end portion of the second contact portion, the wear-resistant contact layer is formed on the spring property wire on between the forming region, the spring resistance wire Characterized in that it also comprises a highly conductive film electrical resistance is small, the.

  In the second aspect of the present invention, in addition to the configuration of the first aspect, a spherical portion having a radius of 2 μm to 10 μm is formed at the tip of the first contact portion, and at least the spherical portion The above-mentioned wear resistant contact film is formed.

  The invention according to claim 3 is characterized in that, in addition to the constitution according to claim 1 or 2, the predetermined contact pressure is 5 grams or less.

  The invention according to claim 4 is characterized in that, in addition to the constitution according to any one of claims 1 to 3, the wear-resistant contact film is chemically inert.

  According to the invention of claim 5, in addition to the constitution according to any one of claims 1 to 4, the wear resistant contact film is a carbon film, a ruthenium film, an iridium film, a gold film, a silver film, a palladium film, It is characterized in that it is a rhodium film or an alloy film of these films.

  The invention according to claim 6 is characterized in that, in addition to the configuration according to any one of claims 1 to 5, the high conductive film is a silver film, a gold film or a copper-nickel laminated film.

  The invention according to claim 7 uses the electrical contact according to any one of claims 1 to 6 to provide the first electrode provided on the first electrical component and the second electrical component. It is characterized in that it is electrically connected to the second electrode described above, and is a socket for an electric part.

According to the invention of claim 1, since the wear-resistant contact film is formed on the springy wire only at the tip of the first contact portion, an increase in the contact area due to the wear of the tip is suppressed to achieve electrical contact Even when the child is repeatedly used for a long time, the electric resistance can be maintained at a sufficiently low state.

  In the electric contact according to the invention of claim 2, the spherical portion having a radius of 2 μm or more and 10 μm or less is formed at the tip of the first contact portion, so the material forming the first terminal is used as the first contact portion. It can be difficult to remain, and it is difficult to peel off the wear resistant contact film, so that it is easy to maintain a sufficiently low electric resistance state even if the electric contact is repeatedly used over a long period of time.

  According to the invention of claim 3, the contact pressure between the electric contact and the first electrode of the first electric component is 5 grams or less, so that the spherical portion of the electric contact can be less abraded, thereby An increase in the contact area between the spherical portion and the first electrical component can be prevented to ensure a sufficiently low contact resistance.

  According to the invention of claim 4, the use of a chemically inert film as the wear-resistant contact film makes it difficult to alloy with the material forming the first electrode provided on the first electric component. Contact film can be obtained.

  According to the invention of claim 5, by using a carbon film, a ruthenium film, an iridium film, a gold film, a silver film, a palladium film, a rhodium film or an alloy film of these films as the wear resistant contact film, Thus, it is possible to obtain a wear resistant contact film which is hard to be alloyed with the forming material of the first electrode provided on the electrical component of the above, and hard to wear.

  According to the invention of claim 6, by using a silver film, a gold film or a copper-nickel laminated film as the highly conductive film, it is possible to sufficiently reduce the electrical resistance of the electrical contact.

  According to the invention of claim 7, since the electric contact according to any one of claims 1 to 6 is used, for electric parts whose stability and reliability are not impaired even if used repeatedly for a long period of time You can get a socket.

BRIEF DESCRIPTION OF THE DRAWINGS It is sectional drawing which shows roughly the structure of IC socket which concerns on Embodiment 1 of this invention, (a) is a top view, (b) is an AA sectional view of (a). It is a sectional view showing roughly the important section composition of IC socket concerning the embodiment, and (a) shows the state where the IC package is not stored, and (b) shows the state where the IC package is stored. It is a top view which shows roughly the principal part structure of IC socket which concerns on the Embodiment 1, (a) is an upper side plate, (b) is an intermediate | middle plate, (c) shows a lower side plate. It is a sectional view showing the wire probe concerning the embodiment 1 roughly, and (a) shows the 1st contact portion and (b) shows the 2nd contact portion. (A)-(e) is sectional drawing which shows roughly the manufacturing process of the IC socket which concerns on the Embodiment 1. FIG. (A)-(c) is sectional drawing which shows roughly the manufacturing process of the IC socket which concerns on the Embodiment 1. FIG. It is a figure which shows roughly the manufacturing process of IC socket which concerns on the Embodiment 1, (a) is a top view, (b) is sectional drawing.

Hereinafter, embodiments of the present invention will be described.
First Embodiment of the Invention
As shown in FIGS. 1 and 2, in this embodiment, the IC socket 12 as the “electric component socket” is disposed on the wiring board 10 as the “second electric component”, and The IC package 11 is housed as "one electric component". Then, the solder ball 11 a as the “first electrode” of the IC package 11 and the electrode 10 a as the “second electrode” of the wiring substrate 10 are electrically connected through the IC socket 12.

  The IC socket 12 includes a plurality of wire probes 13 as “electrical contacts”, an upper plate 14, an intermediate plate 15, a lower plate 16, and an elastomer sheet 17.

  The wire probe 13 is an electrical contact that electrically connects the solder ball 11a of the IC package 11 and the electrode 10a of the wiring substrate 10, and is formed by plastic deformation of one wire (described later). These wire probes 13 are arranged in the IC socket 12 along the vertical direction, for example, in a matrix.

  2A and 2B show only two of the plurality of wire probes 13. As shown in FIG. 2, these wire probes 13 are provided with a spring portion 13a, a first contact portion 13b extending upward from the spring portion 13a, and a downward direction extending from the spring portion 13a. And a second contact portion 13c.

  The spring portion 13a has a central portion 13d inserted into the insertion hole 15a of the intermediate plate 15, and the first spring region 13e extends from the central portion 13d upward (that is, in the direction approaching the upper plate 14). The second spring region 13 f is extended obliquely from the central portion 13 d downward (that is, in the direction approaching the lower plate 16) from the central portion 13 d. As a result, the spring portion 13a has a substantially "K" shape (it may be a substantially "U" shape). By forming the spring portion 13a in a "く" shape or a "コ" shape, the variation of the biasing force accompanying the deformation of the spring portion 13a (lifting of the first contact portion 13b) is extremely reduced. be able to.

  The first contact portion 13 b is inserted into the insertion hole 14 a of the upper plate 14. The first contact portion 13b is provided with a substantially conical tip 31 at its tip, as shown in an enlarged manner in FIG. 4 (a). Further, a spherical portion 31 a having a radius of 2 μm or more and 10 μm or less (desirably, 2 μm or more and 5 μm or less) is formed at the tip end portion 31.

  Here, by setting the radius of the spherical portion 31a to 10 μm or less, the contact area between the first contact portion 13b and the solder ball 11a of the IC package 11 can be sufficiently reduced, whereby the solder ball 11a is formed. It is possible to make it difficult for tin, which is a forming material of the above, to remain at the tip portion 31 of the first contact portion 13b. In addition, by setting the radius of the spherical portion 31a to 2 μm or more, the wear resistant contact film 31b (described later) can be formed on the spherical portion 31a in a state in which it is difficult to peel off sufficiently. Even when the probe 13 is used, an increase in the contact area of the solder ball 11a due to the wear of the tip portion 31 can be suppressed.

  Further, as shown in FIGS. 2A and 2B, the second contact portion 13c is inserted into the insertion hole 16a of the lower plate 16 and the insertion hole 17a of the elastomer sheet 17. Further, as the second contact portion 13c is enlarged and shown in FIG. 4B, the tip portion thereof is bent upward by 90 degrees or more to form an L-shaped contact portion 32.

  The wire probe 13 is manufactured using, for example, a springy base material 30 such as stainless steel, piano wire (carbon steel), tungsten wire or the like. As the base material 30, for example, a material having a length of 4 to 12 mm and a diameter of 0.05 to 0.2 mm can be used.

The conductive wear-resistant contact film 31 b (with a thickness of, for example, 0.1 to 3.0 μm) is formed on the tip 31 of the first contact portion 13 b of each wire probe 13 by, for example, CVD (Chemical Vapor Deposition) method or PVD (Physical)
It is formed by using a film formation method such as a vapor deposition method. The wear-resistant contact film 31 b may be formed only at the end portion including the spherical portion 31 a. By forming the wear-resistant contact film 31b on the spherical surface portion 31a of the distal end portion 31 in this manner, the spherical surface portion 31a can be made less susceptible to wear, whereby the solder balls of the first contact portion 13b and the IC package 11 are produced. It is possible to prevent an increase in the contact area with 11a. For example, a carbon film, a ruthenium film, an iridium film, a gold film, a silver film, a palladium film, a rhodium film, or an alloy film of these films can be used as the wear resistant contact film 31b. In addition to the above, other materials that have sufficient wear resistance and that are chemically inactive with respect to the solder balls 11a (tin) of the IC package 11 (those that are difficult to alloy) It may be a membrane.

  On the other hand, on the surface of each wire probe 13, at least the surface area 31c between the area where the wear resistant contact film 31b is formed and the bent portion (tip portion) 32a of the L-shaped contact portion 32 reduces electrical resistance. A highly conductive film 33 (having a thickness of, for example, 5 to 10 .mu.m) is formed by plating, for example. The highly conductive film 33 can be formed using, for example, silver, nickel, copper or the like, but if it has a low electrical resistance compared to the base material 30 of the wire probe 13, other materials may be used. It may be a membrane. The high conductivity film 33 may have inferior wear resistance as compared to the above-mentioned wear resistant contact film 31b, but it is desirable to use one having excellent electric conductivity. The wear-resistant contact film 31 b and the highly conductive film 33 may be formed of the same material.

  As shown in FIG. 1, the upper plate 14 is provided with an accommodation member 21 for accommodating the IC package 11 on the upper surface side, and the above-mentioned probe disposition area 22 substantially at the center of the accommodation member 21. Is provided. The housing member 21 is provided with a guide portion 21 a for guiding the IC package 11 onto the probe disposition area 22. The above-mentioned insertion holes 14a are respectively formed in the probe installation area 22. In addition, as shown in FIGS. 2A and 2B, a conical ball guide 14b is provided on the upper surface of the upper plate 14. By accommodating the solder balls 11a in the ball guides 14b, the IC package 11 is positioned. The ball guides 14b may be provided corresponding to all the solder balls 11a, may be provided corresponding to only a part of the solder balls 11a, or may not be provided with the ball guides 14b. Good.

  The upper plate 14 is provided on the IC socket 12 and is supported so as to be able to move up and down in a state of being biased upward by a support means (not shown). Then, when the upper plate 14 is pressed downward, the upper plate 14 is guided by the guide pin 25 and descended against the biasing force. On the other hand, when the upper plate 14 is lifted, as shown in FIG. 2A, the solder ball 11a of the IC package 11 is the tip of the first contact portion 13b provided on the wire probe 13. It becomes a state separated from 31. On the other hand, when the IC package 11 is pressed downward and the upper plate 14 is lowered, as shown in FIG. 2B, the solder ball 11a of the IC package 11 is the tip of the first contact portion 13b. 31 is pressed against. The contact pressure between the solder ball 11a and the tip 31 at this time is preferably 5 grams or less. By setting the contact pressure to 5 grams or less, peeling and abrasion of the wear-resistant contact film 31b formed on the spherical surface portion 31a of the wire probe 13 can be prevented from occurring easily. It is possible to prevent an increase in the contact area of the Since the radius of the spherical portion 31a is 5 μm or less, the contact resistance between the first contact portion 13b of the wire probe 13 and the solder ball 11a of the IC package 11 is sufficient even if the contact pressure is 5 grams or less. It gets lower. As described above, when the spring portion 13a is formed in the shape of "字" or "コ", the biasing force associated with the amount of deformation of the spring portion 13a (the amount of elevation of the first contact portion 13b) The variation can be extremely reduced, and therefore, the contact pressure between the solder ball 11a and the tip portion 31 can be easily set.

  As shown in FIG. 3B, the intermediate plate 15 is provided with a probe arrangement area 23 corresponding to the probe arrangement area 22 of the upper plate 14. The above-mentioned insertion holes 15a are formed in the probe installation area 23, respectively.

  The intermediate plate 15 is formed of an insulating material, and a bent portion provided on the spring portion 13a of each wire probe 13 (here, the boundary between the central portion 13d of the wire probe 13 and the second spring region 13f Part) is locked.

  By providing the intermediate plate 15, the wire probes 13 can be prevented from contacting each other and shorting.

  Since the intermediate plate 15 is merely locked to the wire probe 13, the upper plate 14 is lowered against the biasing force, and the solder ball 11 a of the IC package 11 is attached to the tip 31 of the wire probe 13. When pressure contact is made (that is, when changing from the state of FIG. 2 (a) to the state of FIG. 2 (b)), parallel movement is performed in the lower right direction. Conversely, when the above-mentioned upper plate 14 is raised and the solder balls 11a of the IC package 11 are separated from the tip 31 of the wire probe 13 (that is, from the state of FIG. 2B), the state of FIG. ), This intermediate plate 15 moves in the upper left direction. Thus, by freely moving the intermediate plate 15 in the oblique direction, the contact and separation between the solder ball 11a and the tip portion 31 of the wire probe 13 (that is, raising and lowering of the upper plate 14) can be smoothly performed. .

  The position of the intermediate plate 15 does not necessarily have to be at the center between the upper plate 14 and the lower plate 16, and may be a position shifted upward or downward.

  Further, in the first embodiment, one intermediate plate 15 is used, but a plurality of intermediate plates may be used. When a plurality of intermediate plates 15 are provided, it is desirable that the wire probe 13 be formed in a substantially "U" shape.

  The lower plate 16 is provided on the IC socket 12 and is fixed by fixing means (not shown). An elastomeric sheet 17 is provided on the lower surface of the lower plate 16.

  As shown in FIG. 3C, the lower plate 16 is provided with a probe arrangement area 24 corresponding to the probe arrangement area 22 of the upper plate 14. And in this probe installation area | region 24, the penetration hole 16a is provided. Further, the elastomer sheet 17 is provided with insertion holes 17 a corresponding to the insertion holes 16 a of the lower plate 16. As shown in FIGS. 2A and 2B, the second contact portion 13c of the wire probe 13 is inserted through the insertion holes 16a and 17a of the lower plate 16 and the elastomer sheet 17. Then, the elastomer sheet 17 is elastically deformed by pressing the elastomer sheet 17 against the lower plate 16, and the bending portion 32 a of the L-shaped contact portion 32 is pressed against the wiring substrate 10 by the reaction force of the elasticity. The second contact portion 13c and the electrode 10a are electrically connected.

  Although in the first embodiment, the pressing force of the elastomer sheet 17 is received by the L-shaped contact portion 32, the stress at the time when the elastomer sheet 17 is elastically deformed by using another structure is a second contact. You may add to the part 13c.

  However, by using the L-shaped contact portion 32, it is only necessary to bend the second contact portion 13c, and furthermore, there is no need to bring the cut portion 13g of the second contact portion 13c into contact with the electrode 10a. The manufacturing cost of the wire probe 13 can be reduced by eliminating the need to surface process the cut portion 13g.

  As described above, in the first embodiment, the contact pressure between the second contact portion 13 c and the electrode 10 a is given not by the biasing force of the spring portion 13 a of the wire probe 13 but by the pressing force of the lower plate 16. Therefore, according to the first embodiment, the contact pressure of each wire probe 13 can be made uniform. Furthermore, the first contact portion 13b and the second contact portion 13c can be set to different values, so that the contact pressure of the IC package 11 to the solder ball 11a can be sufficiently reduced. The reliability of the electrical connection between the wire probe 13 and the electrode 10 a of the wiring substrate 10 is not impaired.

  Next, a method of manufacturing the IC socket 12 according to the first embodiment will be described.

  First, a method of manufacturing a wire for the wire probe 13 will be described with reference to FIGS. 5 (a) to 5 (e).

  First, a highly conductive film (for example, silver, nickel, copper or the like) 33 is formed, for example, by plating on the wire base material 30 (see FIGS. 4A and 4B). Then, this wire is cut, for example, every 50 mm. Thus, the wire 41 is produced as shown in FIG. 5 (a).

  Subsequently, one end of each wire 41 is polished to form a substantially conical tip 31 as shown in FIG. 5 (b). At this time, a spherical portion 31 a having a radius of 2 μm or more and 10 μm or less (desirably, 2 μm or more and 5 μm or less) is formed at the tip of the tip portion 31.

  Next, carbon (ruthenium, iridium film, gold film, silver film, palladium film, rhodium film, etc.) is formed on the tip portion 31 of each wire 41 using, for example, PVD (Physical Vapor Deposition) or CVD (Chemical Vapor Deposition). Alternatively, an alloy film or the like of these films may be coated. Thereby, the wear resistant contact film 31 b as shown in FIG. 5C is formed.

  Further, the wire 41 is cut into a length (for example, 6 to 10 mm) used as the wire probe 13. Thereby, the probe wire 42 as shown in FIG. 5D is obtained.

  As described above, in the first embodiment, in order to facilitate the polishing, the polishing process (see FIG. 5B) is performed with the long wire wire 41 (here, about 50 mm), and the wear-resistant contact film is further obtained. After forming 31b (see FIG. 5C), the wire 41 is cut (see FIG. 5D). However, the wire probe 13 may be cut at the first cutting (see FIG. 5A) so that the cutting process of FIG. 5D is not performed. Furthermore, the cutting process (see FIG. 5D) is performed after the polishing process (see FIG. 5B), and thereafter, the formation of the wear resistant contact film 31b (see FIG. 5C) is performed. Also good.

  Thereafter, the end portion of the probe wire 42 not subjected to the polishing process is bent to form the L-shaped contact portion 32. As described above, in the first embodiment, the end of the wire 41 (the probe wire 42) may only be polished on the side of the first contact portion 13b, and the L-shaped contact on the side of the second contact portion 13c. Since only the portion 32 is formed, the polishing process is simple.

  Thus, the probe wire 42 is completed.

  Next, a method of assembling the IC socket 12 will be described with reference to FIGS. 6 (a) to 6 (c) and FIGS. 7 (a) and 7 (b).

  First, the upper plate 14, the intermediate plate 15, the lower plate 16 and the elastomer sheet 17 as described above are manufactured. Then, the elastomer sheet 17 is disposed on the lower plate 16 by adhesion or the like. Subsequently, from the bottom, the upper plate 14, the intermediate plate 15, the lower plate 16, and the elastomer sheet 17 are in this order (that is, in the reverse order of the stacking order in use as shown in FIG. 2) Stack. At this time, alignment is performed so that the positions of the insertion holes 14a, 15a, 16a, 17a coincide with each other.

  Further, the mask plate 51 is disposed on the elastomer sheet 17. As shown in FIGS. 6A and 7A, the mask plate 51 includes a plurality of grooves 52 provided corresponding to the insertion holes 14a, 15a, 16a, 17a. The grooves 52 are formed at positions and sizes that can accommodate the L-shaped contact portions 32 of the probe wire 42.

  After that, as shown in FIGS. 6A and 7A, the probe wire 42 is inserted into the groove 52 and the insertion holes 14a, 15a, 16a, 17a from the upper side of the mask plate 51 to form an L-shaped contact portion. Inserted with 32 upward. At this time, the L-shaped contact portion 32 is accommodated in the groove portion 52 of the mask plate 51. By accommodating the L-shaped contact portions 32 in the groove portions 52, the directions of the L-shaped contact portions 32 of the respective probe wires 42 can be aligned, and the L-shaped contact portions 32 can be prevented from contacting each other.

  Subsequently, as shown in FIG. 6 (b), the upper plate 14, the middle plate 15 and the lower plate 16 are separated from each other. At this time, the position of the intermediate plate 15 does not necessarily have to be at the center between the upper plate 14 and the lower plate 16 and may be a position shifted upward or downward. Then, as shown in FIGS. 6 (b) and 7 (b), the lower plate 16 is translated along the first circumferential direction C1 in a state in which the intermediate plate 15 is fixed by fixing means (not shown). Let Similarly, with the intermediate plate 15 fixed in this manner, the upper plate 14 is also moved along the second circumferential direction C2 (see FIG. 6 (b)). As a result, as shown in FIG. 6C, the probe wire 42 is plastically deformed to form a substantially “字” shaped spring portion 13a, and a first portion extending upward from the spring portion 13a. And the second contact portion 13c extending downward from the spring portion 13a can be simultaneously formed.

  In the first embodiment, the lower plate 16 and the upper plate 14 are circumferentially moved at the same time, but these circumferential movements may be performed separately.

  Thereafter, the mask plate 51 is removed. Then, the upper plate 14 is vertically movably mounted in the IC socket 12 using a support means (not shown), and the lower plate 16 is fixedly attached to complete the IC socket 12.

  Next, how to use the IC socket 12 having such a configuration will be described.

  The IC socket 12 is fixed in advance on the wiring substrate 10. By this fixing, the lower plate 16 of the IC socket 12 presses the elastomer sheet 17, and as a result, the elastomer sheet 17 is elastically deformed. Then, the bent portion 32 a of the L-shaped contact portion 32 is pressed against the wiring board 10 by the reaction force of the elastic deformation. Thus, the second contact portion 13c and the electrode 10a are electrically connected.

  Then, the IC package 11 is transported by the automatic machine, guided by the guide portion 21a of the housing member 21, and housed on the probe mounting area 22 of the upper plate 14 (see FIG. 2A).

  Thereafter, when the IC package 11 is pressed downward by pressing means (not shown), the upper plate 14 resists the biasing force of the supporting means (not shown) and is guided by the guide pins 25 to descend. Thereby, the solder ball 11a of the IC package 11 is in pressure contact with the tip portion 31 of the wire probe 13 with a predetermined contact pressure (see FIG. 2B). As a result, the solder ball 11a and the first contact portion 13b of the wire probe 13 are conducted. The intermediate plate 15 moves in parallel in the lower right direction as the upper plate 14 descends.

  Thus, after the IC package 11 is electrically connected to the wiring substrate 10 through the wire probe 13, a burn-in test or the like is performed.

DESCRIPTION OF SYMBOLS 10 wiring board 10a electrode 11 IC package 11a solder ball 12 IC socket 13 wire probe 13a spring part 13b 1st contact part 13c 2nd contact part
13d central portion 13 e first spring region 13 f the second spring region 14 upper plate 14a, 15a, 16a, 17a insertion holes 14b ball guide 15 intermediate plate 16 bottom plate 17 elastomer sheet 21 containing member 22, 23, 24 Probe placement area 30 base material 31 tip 31a spherical part 31b wear resistant contact film 31c surface area 32 L-shaped contact part 32a bent part 33 highly conductive film 41 wire rod 42 wire for probe 42 wire 51 wire 51 mask plate 52 groove

  In addition, since the wear resistant contact film 31b is formed on the tip 31 of the first contact portion 13b, the wire probe 13 is repeatedly used over a long period of time while suppressing an increase in the contact area due to the wear of the tip 31. Even in this case, the electrical resistance can be maintained at a sufficiently low level.

  As a result, according to the first embodiment, it is possible to obtain the IC socket 12 which is excellent in stability and reliability and which is not impaired even if it is repeatedly used over a long period of time. .

  In the first embodiment, although the present invention is applied to the IC socket 12 for the IC package 11 as an example, it is of course possible to be applied to sockets for other types of electric parts. .

DESCRIPTION OF SYMBOLS 10 Wiring board 10a Electrode 11 IC package 11a Solder ball 12 IC socket 13 Wire probe 13a Spring part 13b 1st contact part 13c 2nd contact part 13d 1st spring area 13e 2nd spring area 14 Upper plate 14a, 15a , 16a, 17a Insertion hole 14b Ball guide 15 Intermediate plate 16 Lower plate 17 Elastomer sheet 21 Housing member 22, 23, 24 Probe installation area 30 Base material 31 Tip 31a Spherical part 31b Wear-resistant contact film 31c Surface area 32 L-shaped contact portion 32a bent portion 33 highly conductive film 41 wire wire 42 wire for probe 42 wire 51 mask plate 52 groove portion

Claims (7)

An electrical contact electrically connecting a first electrode provided on a first electrical component and a second electrode provided on a second electrical component, the electrical contact comprising:
A base material made of a springy wire, the first contact portion contacting the first electrode of the first electrical component, and the second contact portion contacting the second electrode of the second electrical component The base material having the contact portion of the above, and a spring portion for bringing the first contact portion into contact with the first electrode of the first electric component at a predetermined contact pressure;
Of the base material, before Symbol first contact portion of the tip portion only formed in the spring of wire on a higher wear resistance than the springy wire abrasion resistance contact layer,
The base material, and the second contact portion of the tip, the wear-resistant contact layer is formed on the spring property wire on between the forming area, electrical resistance than the spring resistance wire Small high conductivity film,
An electrical contact comprising: A spherical portion having a radius of 2 μm or more and 10 μm or less is formed at the tip end portion of the first contact portion.
The wear resistant contact film is formed on at least the spherical portion,
An electrical contact according to claim 1, characterized in that.   The electrical contact according to claim 1, wherein the predetermined contact pressure is 5 grams or less.   The electrical contact according to any one of claims 1 to 3, wherein the wear resistant contact film is chemically inert.   The said wear-resistant contact film is a carbon film, a ruthenium film, an iridium film, a gold film, a silver film, a palladium film, a rhodium film, or an alloy film thereof, according to any one of claims 1 to 3. Electrical contacts.   The electrical contactor according to any one of claims 1 to 5, wherein the highly conductive film is a silver film, a gold film or a copper-nickel laminated film.   The said 1st electrode provided in the said 1st electrical component using the electrical contact in any one of Claim 1 thru | or 6, The said 2nd electrode provided in the said 2nd electrical component And a socket for electrical parts characterized by electrically connecting them.

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