JP6488855B2 - Semiconductor laminate, light receiving element, and method of manufacturing semiconductor laminate - Google Patents

Description

  The present invention relates to a semiconductor laminate, a light receiving element, and a method for producing a semiconductor laminate.

  A semiconductor stacked body including a structure in which a semiconductor layer made of a group III-V compound semiconductor is formed on a substrate made of a group III-V compound semiconductor can be used for manufacturing a light receiving element corresponding to light in the infrared region. Specifically, for example, a buffer layer, a quantum well light-receiving layer, and a contact layer made of a group III-V compound semiconductor are sequentially stacked on a substrate made of a group III-V compound semiconductor, and an appropriate electrode is formed. An infrared light receiving element can be obtained. Regarding such a light receiving element, there is a report on a photodiode having a cutoff wavelength of 2 μm to 5 μm (see, for example, Non-Patent Document 1). In addition, for the purpose of improving sensitivity and the like, the n-type layer is disposed on the opposite side of the substrate as viewed from the quantum well light-receiving layer to form the first electrode in contact with the n-type layer, and the p-type layer is formed on the substrate side. A structure (nip structure) is proposed in which a second electrode that contacts the p-type layer is disposed (see, for example, Patent Document 1). There is also a document in which theoretical calculation has been made on the components of the dark current of the light receiving element (see, for example, Non-Patent Document 2).

JP 2011-192838 A

R. Sidhu, et al. "A Long-Wavelength Photodiode on InP Using Lattice-Matched GaInAs-GaAsSb Type-II Quantum Wells", IEEE PHOTOTONICS TECHNOLOGY LETTERS, VOL. 17, NO. 12, DECEMBER 2005, p. 2715-2717 S. R. FOREST, “Performance of InxGa1-xAsyP1-y Photodiodes with Dark Current Limited by Diffusion, Generation Recombination, and Tuning” QE-17, NO. 2, FEBRUARY 1981, p. 217-226

  In a light receiving element including a semiconductor layer made of the III-V group compound semiconductor, there are cases where the sensitivity is not sufficiently improved and a dark current increases. Therefore, it is possible to improve the sensitivity of a light receiving element including a semiconductor layer made of a III-V group compound semiconductor, and to provide a semiconductor stacked body, a light receiving element, and a method for manufacturing the semiconductor stacked body capable of reducing dark current. One of the purposes.

A semiconductor multilayer body according to the present invention is made of a III-V group compound semiconductor, a first conductivity type layer having a first conductivity type, a quantum well light-receiving layer made of a III-V group compound semiconductor, and III A second conductivity type layer made of a -V group compound semiconductor and having a second conductivity type different from the first conductivity type. The first conductivity type layer, the quantum well light-receiving layer, and the second conductivity type layer are stacked in this order. The quantum well light-receiving layer has a thickness of 0.5 μm or more. The carrier concentration in the quantum well light-receiving layer is 1 × 10 ¹⁶ cm ⁻³ or less.

The manufacturing method of the semiconductor laminated body according to this invention consists of a III-V group compound semiconductor, the process of forming the 1st conductivity type layer whose conductivity type is a 1st conductivity type, and a III-V group compound semiconductor. A step of forming a quantum well light-receiving layer, and a step of forming a second conductivity type layer made of a group III-V compound semiconductor and having a second conductivity type different from the first conductivity type. The step of forming the first conductivity type layer, the step of forming the quantum well light receiving layer, and the step of forming the second conductivity type layer are performed in this order, and the first conductivity type layer, the quantum well light receiving layer, and the second conductivity type are performed. The mold layers are laminated in this order. The quantum well light-receiving layer is formed to have a thickness of 0.5 μm or more and a carrier concentration of 1 × 10 ¹⁶ cm ⁻³ or less.

  According to the semiconductor stacked body and the method for manufacturing the semiconductor stacked body, it is possible to improve the sensitivity of a light receiving element including a semiconductor layer made of a III-V group compound semiconductor and reduce dark current.

3 is a schematic cross-sectional view showing the structure of the semiconductor stacked body in the first embodiment. FIG. 3 is a schematic cross-sectional view showing the structure of the light receiving element in the first embodiment. FIG. 3 is a flowchart showing an outline of a method for manufacturing a semiconductor stacked body and a light receiving element in the first embodiment. It is a flowchart which shows the outline of the procedure of an operation | movement layer formation process. It is a flowchart which shows the 1st modification of the procedure of an operation | movement layer formation process. It is a flowchart which shows the 2nd modification of the procedure of an operation | movement layer formation process. It is a flowchart which shows the 3rd modification of the procedure of an operation | movement layer formation process. 5 is a schematic cross-sectional view for illustrating the method for manufacturing the semiconductor stacked body and the light receiving element in the first embodiment. FIG. 5 is a schematic cross-sectional view for illustrating the method for manufacturing the semiconductor stacked body and the light receiving element in the first embodiment. FIG. 5 is a schematic cross-sectional view for illustrating the method for manufacturing the semiconductor stacked body and the light receiving element in the first embodiment. FIG. 5 is a schematic cross-sectional view for illustrating the method for manufacturing the semiconductor stacked body and the light receiving element in the first embodiment. FIG. 6 is a schematic cross-sectional view showing structures of a light receiving element and a sensor according to Embodiment 3. FIG. It is a figure which shows the relationship between the voltage at the time of changing the carrier concentration in a quantum well light receiving layer, and a depletion layer width.

[Description of Embodiment of Present Invention]
First, embodiments of the present invention will be listed and described. The semiconductor stacked body of the present application is made of a III-V group compound semiconductor, a first conductivity type layer having a first conductivity type, a quantum well light-receiving layer made of a group III-V compound semiconductor, and a group III-V A second conductivity type layer made of a compound semiconductor and having a second conductivity type different from the first conductivity type. The first conductivity type layer, the quantum well light-receiving layer, and the second conductivity type layer are stacked in this order. The quantum well light-receiving layer has a thickness of 0.5 μm or more. The carrier concentration in the quantum well light-receiving layer is 1 × 10 ¹⁶ cm ⁻³ or less.

The inventors of the present invention have studied the cause of the sensitivity not sufficiently improving and the dark current increasing in a light receiving element including a semiconductor layer made of a III-V group compound semiconductor. As a result, it was found that the decrease in sensitivity and the increase in dark current depend on the thickness of the quantum well light-receiving layer and the carrier concentration in the quantum well light-receiving layer. Specifically, the dark current can be suppressed to an acceptable range by setting the carrier concentration to 1 × 10 ¹⁶ cm ⁻³ or less. Further, when the carrier concentration is achieved, a sufficient depletion layer width is secured under a normal operating voltage. And sensitivity can be made into a tolerance | permissible_range by making thickness of a quantum well light receiving layer into 0.5 micrometer or more on the conditions where sufficient depletion layer width is ensured.

In the semiconductor stacked body of the present application, the carrier concentration in the quantum well light-receiving layer is 1 × 10 ¹⁶ cm ⁻³ or less, and the thickness of the light-receiving layer is 0.5 μm or more. Therefore, according to the semiconductor laminate of the present application, by using this to manufacture a light receiving element, the sensitivity of the light receiving element including a semiconductor layer made of a III-V group compound semiconductor can be improved and dark current can be reduced. Can do.

In the semiconductor stacked body, the thickness of the quantum well light-receiving layer may be 1.5 μm or more. The carrier concentration in the quantum well light-receiving layer may be 1 × 10 ¹⁵ cm ⁻³ or less. By doing in this way, the sensitivity of a light receiving element can be improved further and a dark current can be reduced.

In the semiconductor stacked body, the thickness of the quantum well light-receiving layer may be 2.0 μm or more. The carrier concentration in the quantum well light-receiving layer may be 7 × 10 ¹⁴ cm ⁻³ or less. By doing in this way, the sensitivity of a light receiving element can be improved further and a dark current can be reduced.

In the quantum well light-receiving layer of the semiconductor stacked body, the concentration of the first conductivity type impurity that generates the first conductivity type carrier and the concentration of the second conductivity type impurity that generates the second conductivity type carrier are both 1 × 10 ¹⁶ cm ⁻³ or less may be used.

Since the carrier concentration is the difference between the p-type impurity concentration and the n-type impurity concentration, the carrier concentration does not exceed the impurity concentration. By setting both the concentration of the first conductivity type impurity and the concentration of the second conductivity type impurity to 1 × 10 ¹⁶ cm ⁻³ or less, the carrier concentration in the quantum well light-receiving layer can be easily achieved.

In the quantum well light-receiving layer of the semiconductor stacked body, one of the first conductivity type impurity generating a first conductivity type carrier and the second conductivity type impurity generating a second conductivity type carrier is 1 × 10 ¹⁶ cm. ^-3 , and the other of the first conductivity type impurity and the second conductivity type impurity may be included at a concentration of 1 × 10 ¹⁶ cm ⁻³ or less.

Even when one of the p-type impurity and the n-type impurity exceeds 1 × 10 ¹⁶ cm ⁻³ in the quantum well light-receiving layer, by introducing the other of the p-type impurity and the n-type impurity into the quantum well light-receiving layer, The carrier concentration in the quantum well light-receiving layer can be achieved.

  In the semiconductor stacked body, one of the first conductivity type impurity and the second conductivity type impurity is selected from the group consisting of Si (silicon), S (sulfur), Se (selenium), Ge (germanium), and Te (tellurium). The other may be one or more selected from the group consisting of Zn (zinc), Be (beryllium), Mg (magnesium), and C (carbon). These impurities are suitable as p-type impurities or n-type impurities contained in the first conductivity type layer and the second conductivity type layer made of a III-V group compound semiconductor.

  In the semiconductor stacked body, the quantum well light-receiving layer may have a type II type quantum well structure. By doing in this way, it becomes easy to make a semiconductor laminated body suitable for the light receiving element corresponding to the light of an infrared region.

In the above semiconductor stacked body, the quantum well light-receiving layer includes an In _x Ga _1-x As (indium gallium arsenide; x is 0.38 or more and 1 or less) layer and a GaAs _1-y Sb _y (gallium arsenide antimony; 36 or more and 1 or less) a pair with a layer, or Ga _{1 -u} In _u N _v As _{1 -v} (gallium indium nitrogen arsenide; u is 0.4 or more and 0.8 or less, v is more than 0 and 0.2 or less) A multiple quantum well structure including a pair of a layer and a GaAs _1-y Sb _y (y is 0.36 or more and 0.62 or less) layer may be used. By doing in this way, it becomes easy to make a semiconductor laminated body suitable for the light receiving element corresponding to the light of a near infrared region to a mid-infrared region.

  The semiconductor stacked body may further include a substrate located on the side opposite to the quantum well light-receiving layer as viewed from the first conductivity type layer. The substrate is made of GaAs (gallium arsenide), GaP (gallium phosphide), GaSb (gallium antimony), InP (indium phosphide), InAs (indium arsenide), InSb (indium antimony), AlSb (aluminum antimony), or AlAs (aluminum). Arsenic) may be used. Thereby, it becomes easy to employ | adopt the said multiple quantum well structure suitable for the detection of the light of a near infrared region to a mid-infrared region as a quantum well light receiving layer.

  In the semiconductor stacked body, the first conductivity type layer, the quantum well light-receiving layer, and the second conductivity type layer may be stacked without forming a regrowth interface. Thereby, dark current can be suppressed more reliably. The regrowth interface is an interface where at least one element selected from oxygen, hydrogen and carbon is accumulated.

In the semiconductor stacked body, the oxygen concentration, the carbon concentration, and the hydrogen concentration at the interface between the first conductivity type layer and the quantum well light-receiving layer and the interface between the quantum well light-receiving layer and the second conductivity type layer are any of ^May be 1 × 10 ¹⁷ cm ⁻³ or less. Thereby, dark current can be suppressed more reliably.

  The light receiving element of this application is provided with the said semiconductor laminated body and the electrode formed on the semiconductor laminated body. The light receiving element of the present application includes the semiconductor stacked body of the present application. Therefore, according to the light receiving element of the present application, the sensitivity can be improved and the dark current can be reduced.

The manufacturing method of the semiconductor laminated body of this application consists of a III-V group compound semiconductor, the process of forming the 1st conductivity type layer whose conductivity type is the 1st conductivity type, and the quantum well light reception which consists of a III-V group compound semiconductor A step of forming a layer, and a step of forming a second conductivity type layer made of a III-V group compound semiconductor and having a second conductivity type different from the first conductivity type. The step of forming the first conductivity type layer, the step of forming the quantum well light receiving layer, and the step of forming the second conductivity type layer are performed in this order, and the first conductivity type layer, the quantum well light receiving layer, and the second conductivity type are performed. The mold layers are laminated in this order. The quantum well light-receiving layer is formed to have a thickness of 0.5 μm or more and a carrier concentration of 1 × 10 ¹⁶ cm ⁻³ or less.

In the method for manufacturing a semiconductor stacked body of the present application, the quantum well light-receiving layer is formed so as to have a thickness of 0.5 μm or more and a carrier concentration of 1 × 10 ¹⁶ cm ⁻³ or less. Therefore, according to the method for manufacturing a semiconductor stacked body of the present application, a semiconductor stacked body capable of improving sensitivity of a light receiving element including a semiconductor layer made of a group III-V compound semiconductor and reducing dark current is manufactured. be able to.

  In the method for manufacturing a semiconductor stacked body, the step of forming the first conductivity type layer, the step of forming the quantum well light receiving layer, and the step of forming the second conductivity type layer include the first conductivity type layer, the quantum well light receiving layer, and The second conductivity type layer may be stacked without forming a regrowth interface. Thereby, dark current can be suppressed more reliably.

  In the method for manufacturing a semiconductor stacked body, the step of forming the first conductivity type layer, the step of forming the quantum well light-receiving layer, and the step of forming the second conductivity type layer may be performed by metal organic vapor phase epitaxy. Good. By doing in this way, it becomes easy to form the 1st conductivity type layer, quantum well light receiving layer, and 2nd conductivity type layer which consist of the crystal | crystallization of the outstanding quality.

  The method for manufacturing a semiconductor stacked body may further include a step of coating the inside of the growth chamber for performing the step of forming the quantum well light-receiving layer before the step of forming the quantum well light-receiving layer. . By doing in this way, it can suppress that the impurity isolate | separated from the member which comprises a growth chamber mixes in a quantum well light receiving layer.

  The method for manufacturing a semiconductor stacked body includes a step of baking the inside of a growth chamber for performing the step of forming the quantum well light-receiving layer to 600 ° C. or higher before the step of forming the quantum well light-receiving layer. May be further provided. By doing in this way, it can suppress that the impurity isolate | separated from the member which comprises a growth chamber mixes in a quantum well light receiving layer.

  The method for manufacturing a semiconductor stacked body further includes a step of cleaning a member disposed inside the growth chamber for performing the step of forming the quantum well light-receiving layer before the step of forming the quantum well light-receiving layer. You may have. By doing in this way, it can suppress that the impurity isolate | separated from the member which comprises a growth chamber mixes in a quantum well light receiving layer.

[Details of the embodiment of the present invention]
(Embodiment 1)
Next, Embodiment 1 which is one embodiment of a semiconductor laminate according to the present invention will be described below with reference to the drawings. In the following drawings, the same or corresponding parts are denoted by the same reference numerals, and description thereof will not be repeated.

  Referring to FIG. 1, a semiconductor stacked body 10 in the present embodiment includes a substrate 20, a buffer layer 30 as a first conductivity type layer, a quantum well structure 40 as a quantum well light-receiving layer, and a second conductivity type. And a contact layer 50 as a layer.

  The substrate 20 is made of a III-V group compound semiconductor. Moreover, the diameter of the board | substrate 20 is 50 mm or more, for example, is 3 inches. As the group III-V compound semiconductor constituting the substrate 20, for example, GaAs, GaP, GaSb, InP, InAs, InSb, AlSb, AlAs or the like can be employed. By employing the substrate 20 made of these III-V group compound semiconductors, it is possible to obtain the semiconductor laminate 10 suitable for manufacturing a light receiving element for infrared light. Specifically, for example, InP (n-InP) whose conductivity type is n-type is adopted as a compound semiconductor constituting the substrate 20. As the n-type impurity contained in the substrate 20, for example, S (sulfur) or the like can be employed. The diameter of the substrate 20 can be set to 80 mm or more (for example, 4 inches) for the purpose of improving the production efficiency and yield of a semiconductor device (light receiving element) using the semiconductor laminate 10, and further 105 mm or more (for example, 5 inches). ) And 130 mm or more (for example, 6 inches).

  The buffer layer 30 is a semiconductor layer disposed so as to be in contact with one main surface 20 </ b> A of the substrate 20. The buffer layer 30 is made of a III-V group compound semiconductor. Examples of III-V group compound semiconductors constituting the buffer layer 30 include binary systems such as GaSb, AlSb (aluminum antimony), and InSb (indium antimony), and GaInSb (gallium indium antimony), AlInSb (aluminum indium antimony), and AlGaSb. A ternary material such as (aluminum gallium antimony) can be used. Specifically, for example, InGaAs (indium gallium arsenide) (p-InGaAs) whose conductivity type is p-type is adopted as a compound semiconductor constituting the buffer layer 30. As the p-type impurity contained in the buffer layer 30, for example, C (carbon), Be (beryllium), Mg (magnesium), Zn (zinc), or the like can be employed.

The quantum well structure 40 is disposed so as to be in contact with the first main surface 30A on the opposite side of the buffer layer 30 from the side facing the substrate 20. The quantum well structure 40 has a structure in which two element layers made of a group III-V compound semiconductor are alternately stacked. More specifically, the quantum well structure 40 has a structure in which first element layers 41 and second element layers 42 are alternately stacked. As a material constituting the first element layer 41, for example, In _x Ga _1-x As (x is 0.38 or more and 1 or less) can be adopted. As a material constituting the second element layer 42, for example, GaAs _1-y Sb _y (y is 0.36 or more and 1 or less) (gallium arsenide antimony) containing Sb as a group V element can be adopted. Incidentally, the material constituting the first element layer 41 and the second element layer 42 is not limited to the above materials, the material constituting for example a first element layer _{41, Ga 1-u In u} N v As 1-v (U is 0.4 or more and 0.8 or less, v is more than 0 and 0.2 or less) (gallium indium nitrogen arsenide) is adopted, and the material constituting the second element layer 42 is, for example, Sb as a group V element GaAs _1-y Sb _y (y is not less than 0.36 and not more than 0.62) can be employed.

Thus, a pair of an In _x Ga _1-x As (x is 0.38 or more and 1 or less) layer and a GaAs _1-y Sb _y (y is 0.36 or more and 1 or less) layer as a quantum well light-receiving layer, or Ga _1-u In _u N _v As _1-v (u is 0.4 or more and 0.8 or less, v is more than 0 and 0.2 or less) layer and GaAs _1-y Sb _y (y is 0.36 or more and 0 .62 or less) By adopting a multiple quantum well structure including a pair with a layer, it is possible to obtain a semiconductor laminate 10 that can be used for manufacturing a light receiving element suitable for detecting light in the near infrared region to the mid infrared region. it can.

  Further, InAs may be adopted as a material constituting the first element layer 41, and GaSb may be adopted as a material constituting the second element layer 42. By adopting a multiple quantum well structure including a pair of an InAs layer and a GaSb layer as a quantum well light receiving layer as described above, a semiconductor laminate that can be used for manufacturing a light receiving element suitable for detecting infrared rays having a wavelength of 4 to 12 μm. 10 can be obtained.

  In order to compensate for the strain of the quantum well structure 40, the unit structure constituting the quantum well structure 40 may be a structure in which a strain compensation layer is added to the first element layer 41 and the second element layer 42. In the present embodiment, the quantum well structure 40 is a multiple quantum well structure, but a single quantum well structure may be employed instead.

  Referring to FIG. 1, contact layer 50 is arranged to be in contact with main surface 40 </ b> A on the opposite side of quantum well structure 40 from the side facing buffer layer 30. The contact layer 50 is made of a III-V group compound semiconductor.

  As the group III-V compound semiconductor constituting the contact layer 50, for example, InP, InAs, GaSb, GaAs, InGaAs (indium gallium arsenide), or the like can be employed. Specifically, for example, InP (n-InP) whose conductivity type is n-type is adopted as a compound semiconductor constituting the contact layer 50. As the n-type impurity contained in the contact layer 50, for example, Si, S, Se, Ge, Te or the like can be employed.

And the thickness of the quantum well structure 40 which is a quantum well light receiving layer of the semiconductor laminated body 10 of this Embodiment is 0.5 micrometer (500 nm) or more. Specifically, the thickness of the first element layer 41 and the second element layer 42 can be 3 nm, for example. The quantum well structure 40 may be formed by stacking, for example, 100 sets of unit structures including the first element layer 41 and the second element layer 42. That is, the thickness of the quantum well structure 40 can be 600 nm, for example. The quantum well structure 40 may be a type II quantum well having such a structure. Furthermore, in the quantum well structure 40, the carrier concentration is 1 × 10 ¹⁶ cm ⁻³ or less. Therefore, by manufacturing the light receiving element using the semiconductor stacked body 10 of the present embodiment, it is possible to improve the sensitivity of the light receiving element including the semiconductor layer made of the III-V group compound semiconductor and reduce the dark current. it can.

In the quantum well structure 40 of the semiconductor stacked body 10 according to the present embodiment, the concentration of the p-type impurity that generates p-type carriers and the concentration of the n-type impurity that generates n-type carriers are both 1 × 10. ¹⁶ cm ⁻³ or less. Thereby, the carrier concentration in the quantum well structure 40 is 1 × 10 ¹⁶ cm ⁻³ or less.

In the semiconductor stacked body 10, the quantum well structure 40 preferably has a thickness of 1.5 μm or more. In the quantum well structure 40, the carrier concentration is preferably 1 × 10 ¹⁵ cm ⁻³ or less. By doing in this way, the sensitivity of a light receiving element can be improved further and a dark current can be reduced.

In the quantum well structure 40, it is preferable that the concentration of the p-type impurity generating the p-type carrier and the concentration of the n-type impurity generating the n-type carrier are both 1 × 10 ¹⁵ cm ⁻³ or less. Thereby, it becomes easy to set the carrier concentration in the quantum well structure 40 to 1 × 10 ¹⁵ cm ⁻³ or less.

In the semiconductor stacked body 10, the quantum well structure 40 preferably has a thickness of 2.0 μm or more. In the quantum well structure 40, the carrier concentration is preferably 7 × 10 ¹⁴ cm ⁻³ or less. By doing in this way, the sensitivity of a light receiving element can be improved further and a dark current can be reduced.

In the quantum well structure 40, it is preferable that the concentration of the p-type impurity generating p-type carriers and the concentration of the n-type impurity generating n-type carriers are both 7 × 10 ¹⁴ cm ⁻³ or less. This facilitates the carrier concentration in the quantum well structure 40 to be 7 × 10 ¹⁴ cm ⁻³ or less.

  In the semiconductor stacked body 10, the buffer layer 30, the quantum well structure 40, and the contact layer 50 are preferably stacked on the substrate 20 without forming a regrowth interface. Thereby, dark current can be suppressed more reliably.

In the semiconductor stacked body 10, the oxygen concentration, the carbon concentration, and the hydrogen concentration at the interface between the buffer layer 30 and the quantum well structure 40 and the interface between the quantum well structure 40 and the contact layer 50 are all 1 × 10. It is preferably ¹⁷ cm ⁻³ or less. Thereby, dark current can be suppressed more reliably.

  In the semiconductor stacked body 10, the buffer layer 30, the quantum well structure 40 and the contact layer 50 are preferably formed by metal organic vapor phase epitaxy. Thereby, it becomes easy to obtain the semiconductor laminated body 10 which consists of a high quality crystal | crystallization.

  Next, an infrared light receiving element (photodiode) that is an example of a light receiving element manufactured using the semiconductor laminate 10 will be described. Referring to FIG. 2, infrared light receiving element 1 in the present embodiment is manufactured using semiconductor stacked body 10 of the present embodiment, and is a substrate stacked in the same manner as semiconductor stacked body 10. 20, a buffer layer 30, a quantum well structure 40, and a contact layer 50. In the infrared light receiving element 1, a trench 99 that penetrates the contact layer 50 and the quantum well structure 40 and reaches the buffer layer 30 is formed. That is, the contact layer 50 and the quantum well structure 40 are exposed at the side wall 99A of the trench 99. The bottom wall 99B of the trench 99 is located in the buffer layer 30. That is, the buffer layer 30 is exposed at the bottom wall 99B of the trench 99.

  Further, the infrared light receiving element 1 includes a passivation film 80, a p-side electrode 91, and an n-side electrode 92. The passivation film 80 is disposed so as to cover the bottom wall 99B of the trench 99, the side wall 99A of the trench 99, and the main surface 50A opposite to the side facing the quantum well structure 40 in the contact layer 50. The passivation film 80 is made of an insulator such as silicon nitride or silicon oxide.

  An opening 81 is formed in the passivation film 80 that covers the bottom wall 99B of the trench 99 so as to penetrate the passivation film 80 in the thickness direction. A p-side electrode 91 is arranged so as to fill the opening 81. The p-side electrode 91 is disposed so as to contact the buffer layer 30 exposed from the opening 81. The p-side electrode 91 is made of a conductor such as metal. More specifically, the p-side electrode 91 can be made of, for example, Ti (titanium) / Pt (platinum) / Au (gold). The p-side electrode 91 is in ohmic contact with the buffer layer 30.

  An opening 82 is formed in the passivation film 80 covering the main surface 50A of the contact layer 50 so as to penetrate the passivation film 80 in the thickness direction. An n-side electrode 92 is disposed so as to fill the opening 82. The n-side electrode 92 is disposed so as to contact the contact layer 50 exposed from the opening 82. The n-side electrode 92 is made of a conductor such as metal. More specifically, the n-side electrode 92 can be made of, for example, Ti / Pt / Au. The n-side electrode 92 is in ohmic contact with the contact layer 50.

  When infrared light is incident on the infrared light receiving element 1, the infrared light is absorbed between the quantum levels in the quantum well structure 40, and a pair of electrons and holes is generated. Then, the generated electrons and holes are taken out from the infrared light receiving element 1 as photocurrent signals, whereby infrared rays are detected.

  The n-side electrode 92 is a pixel electrode. The infrared light receiving element 1 may include only one n-side electrode 92 as a pixel electrode as shown in FIG. 2, or may include a plurality of pixel electrodes (n-side electrodes 92). It may be. Specifically, the infrared light receiving element 1 has a structure shown in FIG. 2 as a unit structure, and the unit structure has a structure that is repeated a plurality of times in the direction in which one main surface 20A of the substrate 20 extends in FIG. It may be. In this case, the infrared light receiving element 1 has a plurality of n-side electrodes 92 corresponding to the pixels, while only one p-side electrode 91 is arranged. Such a structure will be described later in a third embodiment.

  The infrared light receiving element 1 according to the present embodiment includes the semiconductor laminate 10 according to the present embodiment. Therefore, the infrared light receiving element 1 is a light receiving element with improved sensitivity and reduced dark current.

  Next, with reference to FIGS. 3 to 11, an outline of a method for manufacturing the semiconductor stacked body 10 and the infrared light receiving element 1 in the present embodiment will be described.

  Referring to FIG. 3, in the method for manufacturing semiconductor stacked body 10 and infrared light receiving element 1 in the present embodiment, first, a substrate preparation step is performed as a step (S10). In this step (S10), referring to FIG. 8, substrate 20 made of InP having a diameter of 2 inches (50.8 mm), for example, is prepared. More specifically, the substrate 20 made of InP is obtained by slicing an ingot made of InP. After the surface of the substrate 20 is polished, a substrate 20 in which the flatness and cleanliness of the main surface 20A are ensured through a process such as cleaning is prepared.

  Next, an operation layer forming step is performed as a step (S20). In this step (S20), the buffer layer 30, the quantum well structure 40, and the contact layer 50, which are operation layers, are formed on the main surface 20A of the substrate 20 prepared in the step (S10). This operation layer can be formed, for example, by metal organic vapor phase epitaxy. The operation layer is formed by metal organic vapor phase epitaxy, for example, by placing the substrate 20 on a rotary table equipped with a heater for heating the substrate, and supplying the source gas onto the substrate while heating the substrate 20 with the heater. Can be implemented. Step (S20) includes a buffer layer forming step (S21), a quantum well light receiving layer forming step (S22), and a contact layer forming step (S23) with reference to FIG.

In step (S20), step (S21) is first performed. Specifically, referring to FIG. 8, first, buffer layer 30 made of, for example, p-InGaSb, which is a group III-V compound semiconductor, is contacted on main surface 20A of substrate 20 by metal organic vapor phase epitaxy. It is formed. In the formation of the buffer layer 30 made of p-InGaSb, for example, TMIn (trimethylindium), TEIn (triethylindium), or the like can be used as the In raw material. For example, TEGa (triethylgallium), TMGa (trimethylgallium) can be used as the Ga raw material. For example, TMSb (trimethylantimony), TESb (triethylantimony), TIPSb (triisopropylantimony), TDMASb (tridimethylaminoantimony), TTBSb (tritertiary butylantimony) and the like can be used as the raw material for Sb. Can be used. Further, when C is added as a p-type impurity, for example, CBr ₄ (carbon tetrabromide), CCl ₄ (carbon tetrachloride), or the like can be added to the source gas.

Next, step (S22) is performed. Specifically, referring to FIGS. 8 and 9, for example, a group III-V compound semiconductor is brought into contact with first buffer surface 30 on first main surface 30 </ b> A opposite to the side facing substrate 20. A first element layer 41 made of In _x Ga _1-x As (x is 0.38 or more and 1 or less), and a GaAs _1-y Sb _y (y is 0.36 or more and 1) which is a III-V group compound semiconductor. And the second element layer 42 made of the following layers are alternately stacked to form the quantum well structure 40. The quantum well structure 40 can be formed by metal organic vapor phase epitaxy following the formation of the buffer layer 30. That is, the quantum well structure 40 can be formed by changing the source gas in a state where the substrate 20 is disposed in the apparatus used when the buffer layer 30 is formed. The quantum well structure 40 is formed to have a thickness of 0.5 μm or more and a carrier concentration of 1 × 10 ¹⁶ cm ⁻³ or less.

In the formation of the first element layer 41 made of In _x Ga _1-x As (x is 0.38 or more and 1 or less), for example, TMIn, TEIn, or the like can be used as the In material, and TEGa, for example, can be used as the Ga material. TMGa or the like can be used, and for example, TMSb, TESb, TIPSb, TDMASb, TTBSb, or the like can be used as a raw material for Sb. In the formation of the second element layer 42 made of GaAs _1-y Sb _y (y is 0.36 or more and 1 or less), for example, TEGa, TMGa, or the like can be used as a Ga source, and TBAs (tarsha), for example, can be used as an As source. For example, TMSb, TESb, TIPSb, TDMASb, TTBSb, or the like can be used as a raw material for Sb. The first element layer 41 and the second element layer 42 can each be formed to have a thickness of 3 nm, for example, and 100 unit structures each composed of the first element layer 41 and the second element layer 42 can be stacked, for example. . Thereby, the quantum well structure 40 which is a type II quantum well can be formed.

  Next, step (S23) is performed. Specifically, referring to FIG. 9 and FIG. 1, for example, a group III-V compound semiconductor is brought into contact with main surface 40 </ b> A on the opposite side to the side facing buffer layer 30 of quantum well structure 40. A contact layer 50 made of n-InP is formed. The contact layer 50 can be formed by metal organic vapor phase epitaxy following the formation of the quantum well structure 40. That is, the contact layer 50 can be formed by changing the source gas in a state where the substrate 20 is disposed in the apparatus used when forming the quantum well structure 40. When adding Si as an n-type impurity, for example, TeESi (tetraethylsilane) can be added to the source gas.

With the above procedure, the semiconductor stacked body 10 in the present embodiment is completed. As described above, the production efficiency of the semiconductor stacked body 10 can be improved by performing the step (S20) by metal organic vapor phase epitaxy. The step (S20) is not limited to the metal organic chemical vapor deposition method (all metal organic chemical vapor deposition method) using only the organic metal raw material. For example, AsH ₃ (arsine) is used as the As raw material, and SiH _{4 is used as the} Si raw material. Although it may be carried out by metal organic vapor phase epitaxy using a hydride such as (silane), the semiconductor laminate 10 made of high-quality crystals is obtained by adopting the all metal organic vapor phase epitaxy. Can do. Moreover, it is also possible to implement by methods other than metal organic vapor phase epitaxy, for example, you may use MBE (Molecular Beam Epitaxy) method.

  Further, as described above, the steps (S21) to (S23) are preferably performed continuously by changing the source gas in a state where the substrate 20 is disposed in the apparatus. That is, the steps (S21) to (S23) are preferably performed so that the buffer layer 30, the quantum well structure 40, and the contact layer 50 are stacked without forming a regrowth interface. Thereby, dark current can be suppressed more reliably.

From the viewpoint of facilitating both the p-type impurity concentration and the n-type impurity concentration in the quantum well structure 40 to be 1 × 10 ¹⁶ cm ⁻³ or less in the step (S20), the step (S20) is described below. You may implement according to the modification of.

<Modification 1>
Referring to FIG. 5, in Modification 1, first, a coating step is performed as a step (S21A). In this step (S21A), the inside of the growth chamber for performing steps (S21) to (S23) is coated. Specifically, before performing steps (S21) to (S23), for example, a GaAs source gas is flowed into the growth chamber to coat the growth chamber with GaAs. Thereafter, steps (S21) to (S23) are performed as described above. By doing so, C, Si derived from C, SiO ₂ (silicon dioxide), and Al ₂ O ₃ (aluminum oxide) which are materials constituting the members and the inner wall of the growth chamber disposed inside the growth chamber. , O and the like are prevented from entering the quantum well structure 40. As a result, it becomes easy to set the concentration of the p-type impurity and the concentration of the n-type impurity in the quantum well structure 40 to 1 × 10 ¹⁶ cm ⁻³ or less. By reducing the concentration of the p-type impurity and the n-type impurity, the carrier concentration in the quantum well structure 40 can be easily reduced to 1 × 10 ¹⁶ cm ⁻³ or less. The coating material is not limited to GaAs, and various materials such as InP, InGaAs, AlGaAs, InAs, GaP, and GaSb can be employed.

<Modification 2>
With reference to FIG. 6, in the modified example 2, a baking process is first implemented as a process (S21B). In this step (S21B), the inside of the growth chamber for performing steps (S21) to (S23) is heated to 600 ° C. or higher and baked. Specifically, before performing steps (S21) to (S23), the growth chamber is heated to a temperature higher than the temperature in steps (S21) to (S23), for example, 650 ° C. At this time, an inert gas such as Ar is introduced into the growth chamber. Thereafter, steps (S21) to (S23) are performed as described above. By doing in this way, it is suppressed that the member arrange | positioned inside a growth chamber and the impurity adhering to the inner wall of a growth chamber leave | separate and mix in the quantum well structure 40 in process (S21)-(S23). Is done. As a result, it becomes easy to set the concentration of the p-type impurity and the concentration of the n-type impurity in the quantum well structure 40 to 1 × 10 ¹⁶ cm ⁻³ or less. By reducing the concentration of the p-type impurity and the n-type impurity, the carrier concentration in the quantum well structure 40 can be easily reduced to 1 × 10 ¹⁶ cm ⁻³ or less.

<Modification 3>
Referring to FIG. 7, in Modification 3, first, a cleaning process is performed as a process (S21C). In this step (S21C), a member disposed inside the growth chamber for performing steps (S21) to (S23) is cleaned. Specifically, before carrying out the steps (S21) to (S23), members (susceptor or the like) in contact with the source gas in the growth chamber are washed with aqua regia, hydrochloric acid, phosphoric acid or the like. Thereafter, steps (S21) to (S23) are performed as described above. By doing in this way, it is suppressed that the impurity adhering to the member arrange | positioned inside the growth chamber leaves | separates in process (S21)-(S23), and mixes in the quantum well structure 40. As a result, it becomes easy to set the concentration of the p-type impurity and the concentration of the n-type impurity in the quantum well structure 40 to 1 × 10 ¹⁶ cm ⁻³ or less. By reducing the concentration of the p-type impurity and the n-type impurity, the carrier concentration in the quantum well structure 40 can be easily reduced to 1 × 10 ¹⁶ cm ⁻³ or less.

  Next, referring to FIG. 3, a trench formation step is performed as a step (S30). In this step (S30), referring to FIG. 1 and FIG. 10, the semiconductor layered body 10 produced in the steps (S10) to (S20) penetrates the contact layer 50 and the quantum well structure 40, and the buffer layer A trench 99 reaching 30 is formed. The trench 99 can be formed, for example, by performing etching after forming a mask layer having an opening corresponding to the shape of the trench 99 on the main surface 50A of the contact layer 50.

  Next, a passivation film forming step is performed as a step (S40). In this step (S40), with reference to FIGS. 10 and 11, a passivation film 80 is formed on semiconductor stacked body 10 in which trench 99 is formed in step (S30). Specifically, a passivation film 80 made of an insulator such as silicon oxide or silicon nitride is formed by, for example, CVD (Chemical Vapor Deposition). Passivation film 80 is formed to cover bottom wall 99B of trench 99, side wall 99A of trench 99, and main surface 50A opposite to the side facing quantum well structure 40 in contact layer 50.

  Next, an electrode formation step is performed as a step (S50). In this step (S50), referring to FIG. 11 and FIG. 2, p-side electrode 91 and n-side electrode 92 are formed on semiconductor stacked body 10 on which passivation film 80 is formed in step (S40). Specifically, for example, a mask having an opening at a position corresponding to a region where the p-side electrode 91 and the n-side electrode 92 are to be formed is formed on the passivation film 80, and the opening 81 is formed in the passivation film 80 using the mask. , 82 are formed. Thereafter, for example, a p-side electrode 91 and an n-side electrode 92 made of an appropriate conductor are formed by vapor deposition. The infrared light receiving element 1 in the present embodiment is completed through the above steps. After that, each element is separated by, for example, dicing.

(Embodiment 2)
Next, a second embodiment which is another embodiment of the semiconductor laminate and the light receiving element according to the present invention will be described. The semiconductor laminate and the light receiving element in the second embodiment basically have the same configuration as in the first embodiment, and have the same effects. However, the semiconductor laminate and the light receiving element in the second embodiment are different from those in the first embodiment by having the following configuration.

1 and 2, in semiconductor stack 10 and quantum well structure 40 of infrared light receiving element 1 in the second embodiment, one of the p-type impurity and the n-type impurity exceeds 1 × 10 ¹⁶ cm ⁻³ . The other of the p-type impurity and the n-type impurity is contained at a concentration of 1 × 10 ¹⁶ cm ⁻³ or less. Thereby, the carrier concentration in the quantum well structure 40 is 1 × 10 ¹⁶ cm ⁻³ or less.

Even when one of the p-type impurity and the n-type impurity exceeds 1 × 10 ¹⁶ cm ⁻³ in the quantum well structure 40, the other of the p-type impurity and the n-type impurity exists in the quantum well structure 40, so that the carrier When the concentration is 1 × 10 ¹⁶ cm ⁻³ or less, the dark current can be suppressed to an allowable range. Further, when the carrier concentration is achieved, a sufficient depletion layer width is secured under a normal operating voltage. And sensitivity can be made into a tolerance | permissible range by making thickness of the quantum well structure 40 into 0.5 micrometer or more on the conditions by which sufficient depletion layer width | variety is ensured.

In the semiconductor stacked body 10 and the infrared light receiving element 1 of the present embodiment, the carrier concentration of the quantum well structure 40 is 1 × 10 ¹⁶ cm ⁻³ or less, and the thickness of the quantum well structure 40 is 0.5 μm or more. . Therefore, according to the semiconductor laminate 10 and the infrared light receiving element 1 of the present embodiment, it is possible to improve sensitivity and reduce dark current.

In the semiconductor stacked body 10 and the infrared light receiving element 1 of the present embodiment, the quantum well structure 40 preferably has a thickness of 1.5 μm or more. The carrier concentration in the quantum well structure 40 is preferably 1 × 10 ¹⁵ cm ⁻³ or less. By doing in this way, the sensitivity of the infrared light receiving element 1 can be further improved and the dark current can be reduced.

In the semiconductor stacked body 10 and the infrared light receiving element 1 of the present embodiment, the quantum well structure 40 preferably has a thickness of 2.0 μm or more. The carrier concentration in the quantum well structure 40 is preferably 7 × 10 ¹⁴ cm ⁻³ or less. By doing in this way, the sensitivity of the infrared light receiving element 1 can be further improved and the dark current can be reduced.

  Note that the quantum well structure 40 of the present embodiment is intentionally n-type impurity when the quantum well structure 40 is formed, for example, when it is inevitable to mix the p-type impurity into the quantum well structure 40 due to restrictions such as manufacturing conditions. Can be formed.

(Embodiment 3)
Next, a light receiving element and a sensor according to Embodiment 3, which is another embodiment of the light receiving element according to the present invention, will be described. Referring to FIGS. 12 and 2, infrared light receiving element 1 of Embodiment 3 has the structure shown in FIG. 2 as a unit structure, and the unit structure extends in the direction in which one main surface 20 </ b> A of substrate 20 extends. Multiple structures are repeated. The infrared light receiving element 1 has a plurality of n-side electrodes 92 corresponding to the pixels. On the other hand, only one p-side electrode 91 is disposed.

  More specifically, referring to FIG. 12, p-side electrode 91 of infrared light receiving element 1 of the third embodiment is formed on the bottom wall of trench 99 located at the end in the direction in which substrate 20 extends. Yes. Further, the n-side electrode 92 on the contact layer 50 adjacent to the trench 99 located at the end is omitted. Infrared sensor 100 in the present embodiment includes infrared light receiving element 1 having such a structure, and a read-out integrated circuit (ROIC) 70 electrically connected to infrared light receiving element 1. . The readout circuit 70 is, for example, a CMOS (Complementary Metal Oxide Semiconductor) circuit.

  A plurality of readout electrodes (not shown) provided on the main body 71 of the readout circuit 70 and a plurality of n-side electrodes 92 functioning as pixel electrodes in the infrared light receiving element 1 are arranged via bumps 73 so as to have a one-to-one relationship. Are electrically connected. In addition, the infrared light receiving element 1 has a wiring 75 that contacts the p-side electrode 91 and extends along the bottom wall and the side wall of the trench 99 where the p-side electrode 91 is located, and reaches the contact layer 50. It is formed. The wiring 75 and a ground electrode (not shown) provided on the main body 71 of the readout circuit 70 are electrically connected via the bumps 72. With this structure, light reception information for each pixel of the infrared light receiving element 1 is output from each n-side electrode 92 (pixel electrode) to the readout electrode of the readout circuit 70, and the received light information is aggregated in the readout circuit 70. Thus, for example, a two-dimensional image can be obtained.

  An experiment was conducted to investigate the relationship between the impurity concentration (carrier concentration) in the quantum well light-receiving layer, the thickness of the quantum well light-receiving layer, dark current, and sensitivity. The experimental procedure is as follows.

  An infrared light receiving element 1 having the same structure as that of the first embodiment was produced. The compound semiconductor constituting the substrate 20 is n-InP (impurity S), the compound semiconductor constituting the buffer layer 30 is p-InGaAs (impurity Zn), and the compound semiconductor constituting the first element layer 41 of the quantum well structure 40 is GaAsSb. The compound semiconductor constituting the second element layer 42 was InGaAs, and the compound semiconductor constituting the contact layer 50 was n-InGaAs (impurity Si). In the infrared light receiving element 1, the thickness of the quantum well structure 40 that is the quantum well light-receiving layer was changed, and the impurity concentration contained in the quantum well structure 40 was changed. Si was used as an impurity. Then, the relationship between the voltage and the depletion layer width when the Si concentration was changed was investigated. Further, the dark current and sensitivity when the Si concentration and the thickness of the quantum well structure 40 were changed were measured. The impurity concentration was measured using SIMS (Secondary Ion Mass Spectrometer). The depletion layer width and carrier concentration were derived by capacitance voltage measurement. In the dark current measurement, the element size (cross section perpendicular to the direction of current flow in the current channel) was a circle with a diameter of 20 μm, the measurement voltage was 1.0 V, and the measurement temperature was −50 ° C. Further, under the conditions that the measurement voltage was 1.0 V and the measurement temperature was −50 ° C., light having a wavelength of 2.2 μm was incident from the substrate 20 side, and the sensitivity was measured. As a result of measuring the concentrations of impurities other than Si in the quantum well structure 40, that is, S, Se, Ge, Te (n-type impurities) and Zn, Be, Mg, C (p-type impurities), all were measured. It was below the limit. That is, in this experiment, it can be considered that the impurity concentration and the carrier concentration are equal.

FIG. 13 is a diagram showing the relationship between the voltage and the depletion layer width when the impurity concentration (carrier concentration) in the quantum well light-receiving layer (quantum well structure 40) is changed. The impurity concentration (carrier concentration) was changed in the range from 5 × 10 ¹⁴ cm ⁻³ (solid line in FIG. 13) to 5 × 10 ¹⁶ cm ⁻³ (thin broken line in FIG. 13). Referring to FIG. 13, as the impurity (Si) concentration decreases, the depletion layer width increases, and an increase in sensitivity is expected. Further, by setting the impurity concentration to 1 × 10 ¹⁶ cm ⁻³ or less, the depletion layer width at a voltage of 1.0 V can be set to 0.5 μm or more.

  Table 1 shows the relationship between the impurity concentration (carrier concentration) in the quantum well light-receiving layer (quantum well structure 40), the thickness of the quantum well light-receiving layer, dark current, and sensitivity.

表１において、Ａ、Ｂ、ＣおよびＤは、暗電流および感度の評価を表している。特に好ましい値が得られたものをＡ、好ましい結果が得られたものをＢ、許容可能は結果が得られたものをＣ、許容できない結果であったものをＤと評価した。具体的には、暗電流については５ｐＡ以下であったものをＡ、５０ｐＡ以下であったものをＢ、１５０ｐＡ以下であったものをＣ、１５０ｐＡを超えるものをＤと評価した。また、感度については、１．２Ａ／Ｗ以上であったものをＡ、０．８Ａ／Ｗ以上であったものをＢ、０．５Ａ／Ｗ以上であったものをＣ、０．５Ａ／Ｗ未満であったものをＤと評価した。なお、空欄は、当該条件に対応する実験を行わなかったことを表している。

In Table 1, A, B, C, and D represent the evaluation of dark current and sensitivity. A particularly preferable value was evaluated as A, a preferable result was evaluated as B, an acceptable result was evaluated as C, and an unacceptable result was evaluated as D. Specifically, the dark current was evaluated as A when it was 5 pA or less, B when it was 50 pA or less, C when it was 150 pA or less, and D when it exceeded 150 pA. The sensitivity was 1.2 A / W or higher for A, 0.8 A / W or higher for B, 0.5 A / W or higher for C, 0.5 A / W or higher. What was less than was evaluated as D. Note that the blank indicates that an experiment corresponding to the condition was not performed.

  Referring to Table 1, the dark current is reduced if the impurity concentration in the quantum well structure 40 is lowered regardless of the thickness of the quantum well structure 40. On the other hand, the sensitivity is increased by increasing the thickness of the quantum well structure 40 while reducing the impurity concentration in the quantum well structure 40. More specifically, the sensitivity is increased by reducing the impurity concentration in the quantum well structure 40 to increase the depletion layer width and securing a quantum well structure thickness equal to or greater than the depletion layer width. .

Then, the thickness of the quantum well light-receiving layer (quantum well structure 40) is 0.5 μm or more, and the impurity concentration (carrier concentration) of the quantum well light-receiving layer (quantum well structure 40) is 1 × 10 ¹⁶ cm ⁻³ or less. As a result, the dark current and the sensitivity can both be evaluated as C or higher. The quantum well light-receiving layer (quantum well structure 40) has a thickness of 1.5 μm or more, and the quantum well light-receiving layer (quantum well structure 40) has an impurity concentration (carrier concentration) of 1 × 10 ¹⁵ cm ⁻³ or less. Thus, both the dark current and the sensitivity can be evaluated as B or higher. Furthermore, the thickness of the quantum well light-receiving layer (quantum well structure 40) is 2.0 μm or more, and the impurity concentration (carrier concentration) of the quantum well light-receiving layer (quantum well structure 40) is 7 × 10 ¹⁴ cm ⁻³ or less. As a result, the dark current and the sensitivity can both be evaluated as A or higher. From the above experimental results, it was confirmed that according to the semiconductor laminated body and the infrared light receiving element of the present application, the sensitivity of the light receiving element including the semiconductor layer made of a III-V group compound semiconductor can be improved and the dark current can be reduced. Is done.

An experiment was conducted to confirm the effect of reducing the carrier concentration by intentionally introducing impurities that generate carriers of different conductivity types into the quantum well light-receiving layer mixed with impurities. Specifically, a quantum well light-receiving layer (quantum well structure 40) is further formed in the same configuration as the sample (sample A) having an impurity (Si) concentration of 5 × 10 ¹⁶ cm ⁻³ and a thickness of 1.5 μm prepared in Example 1 above. ) Was introduced at a concentration of 4.5 × 10 ¹⁶ cm ⁻³ and a carrier concentration was reduced to 5 × 10 ¹⁵ cm ⁻³ (sample B), and the sensitivity and sensitivity were the same as in Example 1. The dark current was measured and compared with Sample A. The experimental results are shown in Table 2. The evaluation criteria for sensitivity and dark current are the same as in Example 1.

表２を参照して、不純物としてＺｎを導入したサンプルＢは、サンプルＡに比べて感度が上昇し、暗電流が低減されている。このことから、不純物の混入が不可避な場合、不純物が混入した量子井戸受光層に導電型の異なるキャリアを生成する不純物を意図的に導入し、キャリア濃度を低下させることで、感度および暗電流を改善可能であることが確認される。

Referring to Table 2, Sample B into which Zn is introduced as an impurity has higher sensitivity and lower dark current than Sample A. From this, when impurities are inevitably mixed, impurities that generate carriers of different conductivity types are intentionally introduced into the quantum well light-receiving layer in which impurities are mixed, and the carrier concentration is lowered to reduce sensitivity and dark current. It is confirmed that improvement is possible.

  An experiment was performed to confirm the effect of performing the additional steps in the first to third modifications of the first embodiment. Specifically, the process (corresponding to sample D) of performing the coating process of the first modification, the process (corresponding to sample E) of performing the baking process (650 ° C., 1 hour) of the second modification, and the third modification The process (corresponding to the sample F) for carrying out the cleaning step was carried out, and these were obtained (corresponding to the sample C; heating before forming the buffer layer 30: 550 ° C., 1 hour). The sensitivity and dark current of the infrared light receiving element 1 were compared. For samples C, D, E, and F, the concentrations of Si, C, and Zn in the quantum well structure 40 were measured. The experimental results are shown in Table 3. The evaluation criteria for sensitivity and dark current are the same as in Example 1.

表３を参照して、感度、暗電流ともに評価Ｄとなる赤外線受光素子（サンプルＣ）が得られた条件において、変形例１〜３のコーティング、ベーキング、洗浄を実施することにより、感度および暗電流が大幅に改善している。これは、これらの追加的工程の実施によりＳｉ、ＣおよびＺｎを含む不純物の量子井戸構造への混入が抑制されたためであると考えられる。このことから、変形例１〜３の追加的工程を実施することにより、感度および暗電流の大幅な改善が達成可能であることが確認される。

With reference to Table 3, the sensitivity and darkness were obtained by performing the coating, baking, and cleaning of Modifications 1 to 3 under the conditions in which the infrared light receiving element (sample C) having both sensitivity and dark current of evaluation D was obtained. The current has improved significantly. This is thought to be because the inclusion of impurities including Si, C, and Zn into the quantum well structure is suppressed by performing these additional steps. From this, it is confirmed that a significant improvement in sensitivity and dark current can be achieved by performing the additional steps of the first to third modifications.

  In the above embodiments and examples, the case where the first conductivity type is p-type and the second conductivity type is n-type has been mainly described. However, the semiconductor stacked body, the light receiving element, and the semiconductor stack of the present application are described. The method for manufacturing the body is not limited to this, and the first conductivity type may be n-type and the second conductivity type may be p-type.

  It should be understood that the embodiments and examples disclosed herein are illustrative in all respects and are not restrictive in any respect. The scope of the present invention is defined by the scope of the claims, rather than the description above, and is intended to include any modifications within the scope and meaning equivalent to the scope of the claims.

  The semiconductor laminated body, the light receiving element, and the method for producing the semiconductor laminated body of the present application can be particularly advantageously applied to the semiconductor laminated body, the light receiving element, and the method for producing the semiconductor laminated body that require improvement in sensitivity and reduction in dark current.

DESCRIPTION OF SYMBOLS 1 Infrared light receiving element 10 Semiconductor laminated body 20 Substrate 20A Main surface 30 Buffer layer 30A First main surface 40 Quantum well structure 40A Main surface 41 First element layer 42 Second element layer 50 Contact layer 50A Main surface 70 Read-out circuit 71 Main body 72 73 Bump 75 Wiring 80 Passivation film 81 Opening 82 Opening 91 P-side electrode 92 N-side electrode 99 Trench 99A Side wall 99B Bottom wall 100 Infrared sensor

Claims (13)

A first conductivity type layer made of a III-V compound semiconductor and having a conductivity type of the first conductivity type;
A quantum well light-receiving layer made of a group III-V compound semiconductor;
A second conductivity type layer made of a III-V compound semiconductor and having a conductivity type that is a second conductivity type different from the first conductivity type,
The first conductivity type layer, the quantum well light-receiving layer, and the second conductivity type layer are laminated in this order,
The quantum well light-receiving layer has a thickness of 0.5 μm or more,
Carrier concentration in the quantum well absorption layer is Ri der 1 × ¹⁰ 15 ^{cm -3} or less,
In the quantum well light-receiving layer, one of the first conductivity type impurity that generates the first conductivity type carrier and the second conductivity type impurity that generates the second conductivity type carrier is 1 × 10 ¹⁶ cm ⁻³ . than in a concentration, the other of said first conductivity type impurity and the second conductivity type impurity, the difference between the one concentration Ru in a concentration of 1 × 10 ¹⁶ cm ^-3 or less, the semiconductor laminate. The thickness of the quantum well absorption layer is 1.5μm or more, the semiconductor laminate according to claim 1. The quantum well light-receiving layer has a thickness of 2.0 μm or more,
The semiconductor stacked body according to claim 1, wherein a carrier concentration in the quantum well light-receiving layer is 7 × 10 ¹⁴ cm ⁻³ or less. One of the first conductivity type impurity and the second conductivity type impurity is at least one selected from the group consisting of Si, S, Se, Ge and Te, and the other is from the group consisting of Zn, Be, Mg and C. The semiconductor laminate according to any one of claims 1 to 3 , wherein the semiconductor laminate is one or more selected. The semiconductor stacked body according to any one of claims 1 to 4 , wherein the quantum well light-receiving layer has a type II type quantum well structure. The quantum well absorption layer _{is, In x Ga 1-x As} (x is 0.38 or more and 1 or less) layer and _GaAs 1-y _Sb y (y is 0.36 or more and 1 or less) pair of the layers or Ga _{1, -u in u N v as 1-} v (u 0.4 to 0.8, v 0.2 or less than 0 is) layer and _GaAs 1-y _Sb y (y is 0.36 or more 0.62 The semiconductor stacked body according to any one of claims 1 to 5 , which has a multiple quantum well structure including a pair with a layer below. A substrate located on a side opposite to the quantum well light-receiving layer as viewed from the first conductivity type layer;
The semiconductor laminate according to claim 6 , wherein the substrate is made of GaAs, GaP, GaSb, InP, InAs, InSb, AlSb, or AlAs. The oxygen concentration, the carbon concentration, and the hydrogen concentration at the interface between the first conductivity type layer and the quantum well light-receiving layer and at the interface between the quantum well light-receiving layer and the second conductivity type layer are all 1. The semiconductor stacked body according to claim 1 , which is × 10 ¹⁷ cm ⁻³ or less. The semiconductor laminate according to any one of claims 1 to 8 ,
A light receiving element comprising: an electrode formed on the semiconductor laminate. Forming a first conductivity type layer made of a III-V compound semiconductor and having a conductivity type of the first conductivity type;
Forming a quantum well light-receiving layer made of a III-V compound semiconductor;
Forming a second conductivity type layer made of a III-V group compound semiconductor and having a second conductivity type different from the first conductivity type.
The step of forming the first conductivity type layer, the step of forming the quantum well light-receiving layer, and the step of forming the second conductivity type layer are performed in this order, and the first conductivity type layer and the quantum well are formed. The light receiving layer and the second conductivity type layer are laminated in this order,
The quantum well absorption layer has a thickness is not less 0.5μm or more, the carrier concentration is Ri Do and 1 × 10 ¹⁵ cm ^-3 or less, in the quantum well absorption layer, first generating the first conductive carrier One of the conductivity type impurity and the second conductivity type impurity that generates the second conductivity type carrier is included at a concentration exceeding 1 × 10 ¹⁶ cm ^−3, and the first conductivity type impurity and the second conductivity type impurity are included. the other is the difference between the one of concentration is formed so that in a concentration of 1 × 10 ¹⁶ cm ^-3 or less, the manufacturing method of the semiconductor lamination. The step of forming the first conductivity type layer, the step of forming the quantum well light receiving layer, and the step of forming the second conductivity type layer include the first conductivity type layer, the quantum well light receiving layer, and the second conductivity type. The manufacturing method of the semiconductor laminated body of Claim 10 implemented so that a type | mold layer may be laminated | stacked, without forming a regrowth interface. The step of forming the first conductivity type layer, forming a step and the second conductivity type layer to form the quantum well absorption layer is carried out by metal organic chemical vapor deposition, according to claim 10 or claim The manufacturing method of the semiconductor laminated body of 11 . The method of any one of claims 10 to 12 , further comprising a step of coating the inside of a growth chamber for performing the step of forming the quantum well light-receiving layer before the step of forming the quantum well light-receiving layer. The manufacturing method of the semiconductor laminated body of 1 item | term.

Images