JP6483484B2 - Substrate processing equipment - Google Patents

Description

  The present invention relates to a substrate processing apparatus having a function of reducing damage caused by a water hammer phenomenon.

  In a substrate polishing apparatus for polishing a semiconductor substrate (wafer), the polishing liquid used for polishing the substrate may adhere to the constituent parts of the polishing unit and the inner surface / ceiling of the polishing chamber. If it is left as it is, the adhering polishing liquid dries and accumulates. As a result, it eventually peels off and falls onto the substrate or adheres to the polishing surface of the polishing pad and scratches the substrate during polishing. It may become a factor to generate.

  Therefore, conventionally, a hand shower is provided in the substrate polishing apparatus (see, for example, Patent Document 1), and periodically (preferably before the polishing liquid dries), and adheres to the components of the polishing unit and the inner wall and ceiling of the polishing chamber. The polishing liquid was manually washed with pure water (ultra pure water).

JP-A-9-29637

  However, the conventional hand shower is configured to start and stop water discharge by manually operating the operation lever (handle), but there is no countermeasure against the water hammer phenomenon that occurs when water discharge is stopped. Was not taken. On the other hand, equipment for processing semiconductor substrates requires extremely high levels (classes) of cleanliness management. For example, hand showers are made of plastic, and their piping (pure water supply tubes) is also oil-free. Therefore, there is a limit to increasing the pressure durability. For this reason, when water discharge is stopped, there is a problem that the hand shower and its piping (pure water supply tube) may be damaged by the water hammer phenomenon.

  The present invention has been made in view of the above problems, and an object of the present invention is to provide a substrate processing apparatus that can reduce damage due to a water hammer phenomenon.

  The substrate processing apparatus of the present invention includes a substrate processing unit that performs substrate processing in a chamber and a cleaning unit that performs cleaning processing in the chamber. The cleaning unit includes a liquid supply port and a liquid. A main body having a radiation port; a flow path formed between the liquid supply port and the liquid radiation port inside the main body; and a valve provided in the flow path. When the valve is opened, the flow path is opened and liquid is emitted from the liquid radiation port. When the valve is closed, the flow path is closed and the liquid is discharged. A water hammer reduction mechanism that is activated when the emission of the liquid from the radiation port is stopped and the valve is closed in the flow path to reduce damage to the flow path due to a water hammer phenomenon. It is provided.

  With this configuration, when stopping the emission of the liquid from the liquid emission port of the cleaning unit of the substrate processing apparatus, the water hammer reducing mechanism is activated when the valve is closed. Thereby, the damage to the flow path by a water hammer phenomenon can be reduced.

  In the substrate processing apparatus of the present invention, the flow path is formed between the first flow path formed between the liquid supply port and the valve, and between the valve and the liquid radiation port. A second flow path, and a third flow path that connects the first flow path and the second flow path without passing through the valve, and the water hammer reducing mechanism includes the third flow path A pressure relief valve provided in the flow path; and when the valve is closed, the pressure relief valve is opened due to the liquid pressure rising inside the first flow path, The channel and the second channel may be opened.

  With this configuration, when the valve is closed, the pressure relief valve is opened due to the liquid pressure inside the first flow path, and the first flow path and the second flow path are connected to the third flow path. Opening through the path can prevent the liquid pressure inside the first flow path from rising excessively. Thereby, the damage to the flow path by a water hammer phenomenon can be reduced.

  In the substrate processing apparatus of the present invention, the pressure relief valve is configured to be kept closed by an urging member, and the urging pressure by the urging member is applied to the inside of the first flow path. The normal liquid pressure may be higher than the normal pressure, and may be lower than the breakage generation pressure at which the flow path is damaged by the water hammer phenomenon.

  With this configuration, since the urging pressure of the pressure relief valve is lower than the failure occurrence pressure, it is possible to prevent the passage from being damaged due to the water hammer phenomenon. Further, in this case, since the biasing pressure of the pressure relief valve is higher than the normal liquid pressure inside the first flow path, the normal time when the valve is closed (when the water hammer phenomenon does not occur) ), The pressure relief valve is opened and the first flow path and the second flow path are opened, so that the liquid can be prevented from being radiated (leaked) from the liquid radiation port.

  Further, in the substrate processing apparatus of the present invention, the cleaning unit includes a piston that is provided in the valve and slides in conjunction with opening and closing operations of the valve, and a cylinder chamber in which the piston is housed, The flow path includes a first flow path formed between the liquid supply port and the valve, a second flow path formed between the valve and the liquid radiation port, and the first flow path. A fourth flow path connecting the flow path and the cylinder chamber, and the fluid resistance of the fourth flow path may be greater than the fluid resistance of the first flow path.

  With this configuration, when the valve is closed, liquid flows from the fourth flow path into the cylinder chamber as the piston slides. In this case, the fluid resistance of the fourth flow path is Since it is larger than the fluid resistance of the first flow path, the speed at which the liquid flows into the cylinder chamber (the amount of inflow per unit time) is reduced. Therefore, the speed of sliding movement of the piston is also reduced, and the speed at which the valve is closed is also reduced. Thus, by reducing the valve closing speed, it is possible to prevent the liquid pressure inside the first flow path from rising excessively when the valve is closed. Thereby, the damage to the flow path by a water hammer phenomenon can be reduced. In this case, it can be said that a configuration in which the fluid resistance of the fourth channel is larger than the fluid resistance of the first channel is adopted as the water hammer reduction mechanism.

  In the substrate processing apparatus of the present invention, a fluid resistance adjusting unit that adjusts a fluid resistance of the fourth channel may be provided in the fourth channel.

  With this configuration, the fluid resistance of the fourth flow path can be adjusted, so that the moving speed of the piston (that is, the valve closing speed) can be adjusted appropriately.

  In the substrate processing apparatus of the present invention, the cylinder chamber includes a first area that is an area for sliding the piston when the valve is opened, and the first area across the piston. A second area that is an area opposite to the first area, and the cylinder chamber is provided with a fifth flow path that connects the first area and the second area, and the fifth flow path Is provided with a check valve, and when the valve is opened, the check valve is opened due to the liquid pressure rising inside the first area. The second area may be opened.

  With this configuration, when the valve is opened, the check valve is opened due to the liquid pressure inside the first area of the cylinder chamber, and the first area and the second area pass through the fifth flow path. And the liquid can move from the first area to the second area. Accordingly, the sliding movement of the piston is not hindered by the liquid pressure, and the piston can be smoothly slid.

  In the substrate processing apparatus of the present invention, the substrate processing unit may be a polishing unit that polishes the substrate in the chamber, and the cleaning unit may be a hand shower gun that cleans the inside of the chamber.

  With this configuration, by providing the hand shower gun with a water hammer reducing mechanism, damage to the flow path due to the water hammer phenomenon can be reduced.

  In the substrate processing apparatus of the present invention, the substrate processing unit may be a polishing unit that polishes the substrate in the chamber, and the cleaning unit may be an atomizer that cleans the polishing unit in the chamber. .

  With this configuration, by providing the atomizer with a water hammer reducing mechanism, damage to the flow path due to the water hammer phenomenon can be reduced.

  A substrate processing apparatus of the present invention includes a substrate processing unit that performs substrate processing in a chamber, a cleaning unit that performs cleaning processing in the chamber, and a liquid supply line that supplies liquid to the cleaning unit. In the apparatus, the cleaning unit includes a main body having a liquid supply port and a liquid radiation port, a flow path formed between the liquid supply port and the liquid radiation port inside the main body, and the flow path. In the cleaning unit, when the valve is opened, the flow path is opened to radiate liquid from the liquid radiation port, and the valve is closed. Then, the flow path is closed and the emission of the liquid from the liquid emission port is stopped, and the liquid supply line is activated when the valve is closed to cause a water hammer phenomenon. Water hammer reduction mechanism is provided to reduce the damage to the flow path that.

  With this configuration, when stopping the emission of the liquid from the liquid emission port of the cleaning unit of the substrate processing apparatus, the water hammer reducing mechanism is activated when the valve is closed. Thereby, the damage to the flow path by a water hammer phenomenon can be reduced. In addition, when a water hammer reduction mechanism is provided in the liquid supply line, it may be provided directly in the middle of the liquid supply line, or may be provided in another line (for example, a liquid discharge line) that is branched from the middle of the liquid supply line. It may be provided.

  In the substrate processing apparatus of the present invention, the water hammer reducing mechanism is configured by a pressure relief valve provided in a liquid discharge line branched from the liquid supply line, and the pressure relief valve is in a closed state. Occasionally it may be activated to reduce damage to the flow path due to the water hammer phenomenon.

  With this configuration, by providing the pressure relief valve, damage to the flow path due to the water hammer phenomenon can be reduced.

  Further, in the substrate processing apparatus of the present invention, the water hammer reducing mechanism is constituted by a buffer tank provided in the liquid supply line, and the buffer tank is activated when the valve is in a closed state to cause a water hammer phenomenon. There may be provided a diaphragm for reducing damage to the flow path due to.

  With this configuration, by providing a buffer tank having a diaphragm, damage to the flow path due to the water hammer phenomenon can be reduced.

  In the substrate processing apparatus of the present invention, the water hammer reducing mechanism includes a pressure sensor and a pressure relief valve provided in a liquid discharge line branched from the liquid supply line, and the valve is closed when the valve is closed. When the pressure sensor detects an increase in pressure in the liquid supply line, the pressure relief valve may be activated to reduce damage to the flow path due to a water hammer phenomenon.

  With this configuration, by providing the pressure sensor and the pressure relief valve, damage to the flow path due to the water hammer phenomenon can be reduced.

  According to the present invention, damage due to the water hammer phenomenon can be reduced.

It is a top view which shows the whole structure of the substrate processing apparatus in embodiment of this invention. It is a schematic diagram which shows the pure water supply piping of a grinding | polishing part. It is a top view of the substrate processing apparatus in an embodiment of the invention. It is explanatory drawing of the hand shower gun in embodiment of this invention. It is explanatory drawing of the hand shower gun in the 1st Embodiment of this invention. It is explanatory drawing of the hand shower gun (at the time of water discharge) in the 1st Embodiment of this invention. It is explanatory drawing of the hand shower gun (at the time of water discharge stop) in the 1st Embodiment of this invention. It is explanatory drawing of the atomizer of the modification of the 1st Embodiment of this invention. It is explanatory drawing of the hand shower gun in the 2nd Embodiment of this invention. It is explanatory drawing of the hand shower gun (at the time of water discharge) in the 2nd Embodiment of this invention. It is explanatory drawing of the hand shower gun (at the time of water discharge stop) in the 2nd Embodiment of this invention. It is explanatory drawing of the atomizer of the modification of the 2nd Embodiment of this invention. It is explanatory drawing of the hand shower gun in the 3rd Embodiment of this invention. It is explanatory drawing of the hand shower gun (at the time of water discharge) in the 3rd Embodiment of this invention. It is explanatory drawing of the hand shower gun (at the time of water discharge stop) in the 3rd Embodiment of this invention. It is explanatory drawing of the atomizer of the modification of the 3rd Embodiment of this invention. It is explanatory drawing of the substrate processing apparatus in other embodiment of this invention. It is explanatory drawing of the substrate processing apparatus in other embodiment of this invention. It is explanatory drawing of the substrate processing apparatus in other embodiment of this invention.

  Hereinafter, a substrate processing apparatus according to an embodiment of the present invention will be described with reference to the drawings. In this embodiment, for example, a case of a substrate processing apparatus used as a substrate polishing apparatus or the like is illustrated. In addition, the same code | symbol is attached | subjected to the component which is the same or it corresponds, and the overlapping description is abbreviate | omitted.

(First embodiment)
FIG. 1 is a plan view showing the overall configuration of a substrate processing apparatus (substrate polishing apparatus) according to an embodiment of the present invention. As shown in FIG. 1, the substrate processing apparatus includes a substantially rectangular housing 1, and the interior of the housing 1 is divided into a load / unload unit 2, a polishing unit 3 and a cleaning unit 4 by partition walls 1a and 1b. It is partitioned. The load / unload unit 2, the polishing unit 3, and the cleaning unit 4 are assembled independently and exhausted independently. The substrate processing apparatus has a control unit 5 that controls the substrate processing operation.

  The polishing unit 3 is a region where the wafer is polished (flattened), and includes a first polishing unit 3A, a second polishing unit 3B, a third polishing unit 3C, and a fourth polishing unit 3D. The first polishing unit 3A, the second polishing unit 3B, the third polishing unit 3C, and the fourth polishing unit 3D are arranged along the longitudinal direction of the substrate processing apparatus as shown in FIG.

  As shown in FIG. 1, the first polishing unit 3A includes a polishing table 30A to which a polishing pad 10 having a polishing surface is attached, and polishing while holding the wafer and pressing the wafer against the polishing pad 10 on the polishing table 30A. A top ring 31A for polishing, a polishing liquid supply nozzle 32A for supplying a polishing liquid or a dressing liquid (for example, pure water) to the polishing pad 10, and a dresser 33A for dressing the polishing surface of the polishing pad 10. And an atomizer 34A for spraying a mixed fluid of liquid (for example, pure water) and gas (for example, nitrogen gas) or a liquid (for example, pure water) to the polishing surface in the form of a mist.

  The purpose of providing the atomizer 34A is to wash away polishing debris and abrasive grains remaining on the polishing surface of the polishing pad 10 with a high-pressure fluid. A more preferable dressing, that is, regeneration of the polishing surface, can be achieved by purifying the polishing surface by the fluid pressure of the atomizer 34A and sharpening the polishing surface by the dresser 33A which is mechanical contact. Usually, after the dressing by a contact type dresser (diamond dresser or the like), the polished surface is often regenerated by an atomizer.

  Similarly, the second polishing unit 3B includes a polishing table 30B to which the polishing pad 10 is attached, a top ring 31B, a polishing liquid supply nozzle 32B, a dresser 33B, and an atomizer 34B. 3C includes a polishing table 30C to which the polishing pad 10 is attached, a top ring 31C, a polishing liquid supply nozzle 32C, a dresser 33C, and an atomizer 34C. The fourth polishing unit 3D includes the polishing pad 10 An attached polishing table 30D, a top ring 31D, a polishing liquid supply nozzle 32D, a dresser 33D, and an atomizer 34D are provided.

  FIG. 2 is a schematic diagram showing a pure water supply pipe of the polishing unit 3. In this substrate processing apparatus, the first polishing unit 3A and the second polishing unit 3B constitute the first polishing unit 3a as one unit, and the third polishing unit 3C and the fourth polishing unit 3D are the first unit. 2 constitutes a polishing section 3b. The 1st grinding | polishing part 3a and the 2nd grinding | polishing part 3b are comprised so that division | segmentation is mutually possible. As described above, the polishing unit 3 uses various fluids such as pure water, air, and nitrogen gas. For example, as shown in FIG. 2, pure water (DIW) is supplied from a pure water supply source (not shown) to the pure water supply pipe 110 of the substrate processing apparatus. The pure water supply pipe 110 extends through the polishing units 3A, 3B, 3C, 3D of the polishing unit 3 and is connected to a distribution control unit 113 provided in each of the polishing units 3A, 3B, 3C, 3D.

  The pure water supply pipe 110 is divided between the first polishing section 3a and the second polishing section 3b, and the ends of the divided pure water supply pipe 110 are connected by a connection mechanism (not shown). Examples of pure water used in each polishing unit include cleaning of the top ring (for example, cleaning of the outer peripheral side surface of the top ring, cleaning of the substrate holding surface, cleaning of the retainer ring), cleaning of the wafer transfer hand (for example, Cleaning of conveyance hands of first and second linear transporters described later), polishing of polished wafer, dressing of polishing pad, cleaning of dresser (for example, cleaning of dressing member), cleaning of dresser arm, supply of polishing liquid Nozzle cleaning and polishing pad cleaning with an atomizer may be mentioned.

  Pure water flows into each distribution control unit 113 through the pure water supply pipe 110 and is distributed to each use point by each distribution control unit 113. The use point is a place where pure water such as the above-described nozzle for top ring cleaning and nozzle for dresser cleaning is used. The pure water is supplied from the distribution control unit 113 to a terminal device such as a cleaning nozzle (for example, the above-described top ring cleaning nozzle or dresser cleaning nozzle) provided in the polishing unit. For example, pure water having a flow rate adjusted by the distribution control unit 113 for each polishing unit is supplied to the pure water supply tubes (not shown) of the polishing liquid supply nozzles 32A to 32D described above. As described above, since the distribution control unit 113 is arranged for each polishing unit, the number of pipes can be reduced as compared with the conventional structure in which each polishing unit is supplied from one header via a plurality of pipes. it can. This also means that the number of connecting mechanisms for connecting the pipes between the first polishing unit 3a and the second polishing unit 3b is reduced, so that the structure becomes simple and there is a risk of leakage of pure water. Reduced. Since the atomizer requires a large amount of pure water, it is preferable to provide a pure water supply pipe 112 dedicated to the atomizer as shown in FIG.

  Each distribution control unit 113 is provided on the upstream side of the valve box 113a and a valve box 113a communicating with use points such as a nozzle for cleaning the top ring (not shown) and a pure water supply tube (not shown). A pressure gauge 113b and a flow rate regulator 113c provided on the upstream side of the pressure gauge 113b are provided. The valve box 113a has a plurality of pipes that communicate with the use points, and valves that are respectively provided on these pipes.

  The pressure gauge 113b measures the pressure of pure water sent to the valve box 113a, and the flow regulator 113c adjusts the flow rate of pure water so that the measured value of the pressure gauge 113b is maintained at a predetermined value. As described above, since the flow rate of pure water is controlled in each polishing unit, the influence of the use of pure water between the polishing units is reduced, and stable supply of pure water is possible. Therefore, the problem in the conventional structure that the flow rate of pure water in one polishing unit becomes unstable due to the influence of the use of pure water in another polishing unit can be solved. In the example shown in FIG. 2, each polishing unit is provided with a flow rate regulator 113c. However, one flow rate regulator 113c may be provided for every two polishing units. For example, a pair of pressure gauges 113b and a flow rate regulator 113c are provided upstream of two valve boxes 113a provided in the polishing units 3A and 3B, respectively. Similarly, two valves provided in the polishing units 3C and 3D, respectively. A set of pressure gauges 113b and a flow rate regulator 113c may be provided upstream of the box 113a.

  In the example shown in FIG. 2, the atomizers 34 </ b> A, 34 </ b> B, 34 </ b> C are separated from the use point pure water supply pipe 110 such as a top ring cleaning nozzle (not shown) and a pure water supply tube (not shown). A pure water supply pipe 112 dedicated to 34D is provided. The pure water supply pipe 112 is connected to the atomizers 34A, 34B, 34C, 34D, and a flow rate control unit 114 is provided on the upstream side of the atomizers 34A, 34B, 34C, 34D. The flow rate control unit 114 is configured to adjust the flow rate of pure water supplied from the pure water supply pipe 112 and to send the adjusted pure water to the atomizer.

  Each flow control unit 114 includes a valve, a pressure gauge, and a flow regulator similarly to the distribution control unit 113 described above, and the arrangement thereof is the same as the arrangement in the distribution control unit 113. The control unit 5 controls the operation of the flow rate regulator of the flow rate control unit 114 so that pure water having a predetermined flow rate is supplied to each atomizer based on the measurement value of the pressure gauge of the flow rate control unit 114.

  As shown in FIG. 2, the pure water supply pipe 110 and the pure water supply pipe 112 are each independently connected to a pure water supply source, and an independent pure water supply path is secured. With such an arrangement, it is possible to prevent the use of pure water in the atomizer from affecting the flow rate of pure water at other use points.

  FIG. 2 illustrates the pure water supply pipe 110 that supplies pure water. However, the arrangement of the piping and the distribution control unit shown in FIG. 2 is not limited to the supply pipe for other fluids such as air, nitrogen gas, and slurry. Is also applicable. For example, a plurality of slurry supply pipes for transferring a plurality of types of slurry can be provided, and a distribution control unit connected to these slurry supply pipes can be provided for each polishing unit. Each distribution control unit supplies the slurry selected according to the polishing process to the above-described polishing liquid supply nozzle. Since the distribution control unit is provided for each polishing unit, the type of slurry supplied to the polishing liquid supply nozzle can be changed for each polishing unit. Furthermore, the flow rate of the slurry supplied to the polishing liquid supply nozzle can be adjusted by the distribution control unit.

  FIG. 3 is a plan view of the polishing unit 3 of the substrate processing apparatus in the present embodiment. As shown in FIG. 3, a maintenance door 310 that can be opened and closed is provided on the front side of the polishing chamber 300 of the polishing unit 3 (upper side in FIG. 3, corresponding to the left side in FIG. 1). Thus, maintenance of the polishing unit 3 can be performed from the outside of the polishing apparatus. In each polishing chamber 300, a storage box 305 is provided on the side surface of the polishing apparatus close to the maintenance door 310. The storage box 305 is provided with a hand shower gun 40 for cleaning the inside of the polishing chamber 300 (see FIG. 4).

  At the time of cleaning, the operator cleans the inside of the polishing chamber 300 using the hand shower gun 40. As shown in FIG. 4, the hand shower gun 40 is stored in a storage box 305 on the wall surface in the polishing chamber 300 when not in use.

  FIG. 5 is an explanatory diagram of the hand shower gun 40 of the present embodiment. As shown in FIG. 5, the hand shower gun 40 is formed between a main body 43 having a liquid supply port 41 and a liquid radiation port 42, and the liquid supply port 41 and the liquid radiation port 42 inside the main body 43. A flow path 44, a valve 45 provided in the flow path 44, and an operation handle 46 for opening and closing the valve 45 are provided. The flow path 44 inside the main body 43 is provided with a water hammer reducing mechanism that operates when the operation handle 46 is closed and the valve 45 is closed.

  The operation handle 46 includes an operation unit 460, a handle sliding shaft 461, and a mounting portion 462. The handle sliding shaft 461 can slide on the mounting portion 462 in the handle movement direction (opening / closing direction; left-right direction in FIG. 5). Is attached. A return spring 463 is attached between the operation portion 460 and the attachment portion 462, and the operation portion 460 is urged in the closing direction (left direction in FIG. 5) by the return spring 463. Further, a seal member 464 such as an O-ring is attached to the handle sliding shaft 461. The seal member 464 is configured so that liquid (pure water) does not leak from the flow path 44.

  The operation handle 46 is connected to the valve 45 via a handle sliding shaft 461, and the operation handle 46 is configured to be interlocked with the valve 45. A seal member 450 such as an O-ring is attached to the valve 45. The seal member 450 is configured to prevent liquid (pure water) from flowing from the first flow path 44A to the second flow path 44B when the valve 45 is closed.

  In addition, the hand shower gun 40 of this Embodiment is for semiconductors (for pure water precision washing | cleaning). Therefore, the hand shower gun 40 is made of plastic. For example, the liquid contact portion (portion in contact with the liquid) is manufactured using polypropylene, fluororubber or the like, and elution of metal ions and generation of rust are prevented. Further, the piping (the piping outside the main body 43) such as the flow path 44 and the liquid supply tube 47 inside the main body 43 of the hand shower gun 40 is also composed of oil-free products (see FIG. 4).

  Hereinafter, the water hammer reduction mechanism of the present embodiment will be described more specifically. The flow path 44 formed inside the main body 43 of the hand shower gun 40 includes a first flow path 44A formed between the liquid supply port 41 and the valve 45, and between the valve 45 and the liquid radiation port 42. The second flow path 44B is formed by the second flow path 44B, and the third flow path 44C connects the first flow path 44A and the second flow path 44B without using the valve 45.

  The water hammer reducing mechanism of the present embodiment is a pressure relief valve 48 provided in the third flow path 44C. When the operation handle 46 is closed and the valve 45 is closed, the pressure relief valve 48 is opened by the liquid pressure rising inside the first flow path 44A, and the first flow path 44A. And the second flow path 44B are opened.

  In this case, the pressure relief valve 48 is configured to urge a ball (valve element) 50 by a spring 49 to maintain a closed state. The urging pressure by the spring 49 (the release pressure of the pressure relief valve 48) is set higher than the normal liquid pressure inside the first flow path 44A. That is, the release pressure of the pressure relief valve 48 is set higher than the supply pressure of the liquid (pure water) supplied to the flow path 44 (pipe). The release pressure of the pressure relief valve 48 is preferably as close to the supply pressure as possible, and is set to, for example, 1.05 to 1.2 times the supply pressure.

  Further, the urging pressure by the spring 49 (the release pressure of the pressure relief valve 48) is set to be lower than the failure generation pressure at which the flow passage 44 is damaged by the water hammer phenomenon. That is, the release pressure of the pressure relief valve 48 is set lower than the maximum pressure in the pipe when the water hammer phenomenon occurs.

  FIG. 6 is an explanatory view of the hand shower gun 40 in a state where the operation handle 46 is opened, and FIG. 7 is an explanatory view of the hand shower gun 40 in a state where the operation handle 46 is closed. As shown in FIG. 6, when the operation handle 46 is opened and the valve 45 is opened, the flow path 44 is opened and the liquid (pure water) is emitted from the liquid radiation port 42.

  As shown in FIG. 7, when the operation handle 46 is closed and the valve 45 is closed, the flow path 44 is closed and the emission of the liquid (pure water) from the liquid emission port 42 is stopped. In this case, when the operation handle 46 is closed and the valve 45 is closed, the ball (valve element) 50 resists the urging pressure of the spring 49 due to the increased liquid pressure inside the first flow path 44A. As a result, the pressure relief valve 48 is opened, and the first flow path 44A and the second flow path 44B are opened via the third flow path 44C.

  When the first flow path 44A and the second flow path 44B are opened via the third flow path 44C, the liquid pressure inside the first flow path 44A decreases, and the ball (valve element) 50 The spring 49 is moved in the closing direction (rightward in FIG. 7) by the biasing pressure of the spring 49, and the pressure relief valve 48 is closed.

  According to the substrate processing apparatus of the first embodiment of the present invention, the emission of the liquid (pure water) from the liquid emission port 42 of the cleaning unit (hand shower gun 40) of the substrate processing apparatus is stopped. When the valve 45 is closed, the water hammer reducing mechanism (pressure relief valve 48) is activated. Thereby, the damage to the flow path 44 (the flow path 44 inside the hand shower gun 40 and the piping outside the hand shower gun 40) due to the water hammer phenomenon can be reduced, and the life can be extended.

  In the present embodiment, when the valve 45 is closed, the pressure relief valve 48 is opened by the liquid pressure inside the first flow path 44A, and the first flow path 44A and the second flow path 44 are closed. The path 44B is opened through the third flow path 44C, and the liquid pressure inside the first flow path 44A can be prevented from rising excessively. Thereby, damage to the flow path 44 (the flow path 44 inside the hand shower gun 40, the piping outside the hand shower gun 40) due to the water hammer phenomenon can be reduced.

  Further, in the present embodiment, the urging pressure of the pressure relief valve 48 is lower than the breakage occurrence pressure, so that breakage of the flow path 44 due to the water hammer phenomenon can be prevented. Further, in this case, since the urging pressure of the pressure relief valve 48 is higher than the normal liquid pressure inside the first flow path 44A, the normal time when the valve 45 is closed (water hammer phenomenon occurs). The pressure relief valve 48 is opened when the first flow path 44A and the second flow path 44B are opened, and the liquid emission port 42 is prevented from emitting (leaking) liquid. Can do.

(Modification 1)
FIG. 8 shows a modification of the first embodiment. As shown in FIG. 8, the water hammer reduction mechanism of the first embodiment can also be applied to the atomizer 34. That is, the flow path 44 formed inside the main body 43 of the atomizer 34 is formed between the first flow path 44A formed between the liquid supply port 41 and the valve 45, and between the valve 45 and the liquid radiation port 42. And a third flow path 44C that connects the first flow path 44A and the second flow path 44B without using the valve 45, and a third flow path 44C. A pressure relief valve 48 is provided in the flow path 44C. When the valve 45 is closed, the pressure relief valve 48 is opened due to the liquid pressure rising inside the first flow path 44A, and the first flow path 44A and the second flow path 44B Opens.

  Thus, by providing the atomizer 34 with the water hammer reduction mechanism, damage to the flow path 44 (the flow path 44 inside the atomizer 34 and the piping outside the atomizer 34) due to the water hammer phenomenon can be reduced.

(Second Embodiment)
Next, a substrate processing apparatus according to a second embodiment of the present invention will be described. Here, the substrate processing apparatus according to the second embodiment will be described focusing on differences from the first embodiment. Unless otherwise specified, the configuration and operation of the present embodiment are the same as those of the first embodiment.

  FIG. 9 is an explanatory diagram of the hand shower gun 40 of the present embodiment. As shown in FIG. 9, the hand shower gun 40 includes a piston 51 that slides in conjunction with the opening / closing operation of the valve 45, and a cylinder chamber 52 in which the piston 51 is housed. The flow path 44 formed inside the first flow path 44A formed between the liquid supply port 41 and the valve 45, and the second flow path formed between the valve 45 and the liquid radiation port 42. The channel 44 </ b> B and the fourth channel 44 </ b> D that connects the first channel 44 </ b> A and the cylinder chamber 52 are configured. In the present embodiment, a seal member 53 is provided between the outer periphery of the piston 51 and the inner periphery of the cylinder chamber 52.

  And in this Embodiment, the structure that the fluid resistance of 4th flow path 44D is larger than the fluid resistance of 44 A of 1st flow paths as a water hammer reduction mechanism is employ | adopted. For example, by setting the flow path area of the fourth flow path 44D to be smaller than the flow path area of the first flow path 44A, the fluid resistance of the fourth flow path 44D is greater than the fluid resistance of the first flow path 44A. Can be set large. Further, by setting the flow path length of the fourth flow path 44D to be longer than the flow path length of the first flow path 44A, the fluid resistance of the fourth flow path 44D is made to be greater than the fluid resistance of the first flow path 44A. Can be set large.

  As shown in FIG. 9, the fourth flow path 44D is provided with a fluid resistance adjustment unit that adjusts the fluid resistance of the fourth flow path 44D. In this case, a throttling mechanism 54 that adjusts the flow path area of the fourth flow path 44D is provided as a fluid resistance adjustment unit. The adjusting screw 55 of the diaphragm mechanism 54 is screwed to the main body 43 of the hand shower gun 40. A seal member 550 such as an O-ring is attached between the main body 43 and the adjustment screw 55. The seal member 550 is configured to prevent liquid (pure water) from leaking from the fourth flow path 44D. Further, a rotation-preventing spring 551 is attached to the adjustment screw 55. The adjustment screw 55 is urged by the anti-rotation spring 551 (biased in the right direction in FIG. 9), thereby preventing the screw from loosening (wobble).

  For example, when the adjusting screw 55 of the throttle mechanism 54 is rotated and the adjusting screw 55 is moved in the throttle direction (left direction in FIG. 9), the flow path area of the fourth flow path 44D becomes small, and the fourth flow The fluid resistance of the path 44D increases. When the adjustment screw 55 of the aperture mechanism 54 is rotated in the reverse direction and the adjustment screw 55 is moved in the opposite direction (right direction in FIG. 9), the flow path area of the fourth flow path 44D increases, and the fourth flow path The fluid resistance of 44D is reduced. Thus, the fluid resistance of the fourth flow path 44D can be adjusted by changing the flow area of the fourth flow path 44D by the throttle mechanism 54.

  Further, as shown in FIG. 9, the cylinder chamber 52 has a first area 52A (FIG. 9) that is an area for the piston 51 to slide when the operation handle 46 is opened and the valve 45 is opened. And a second area 52B (an area on the left side in FIG. 9) that is an area opposite to the first area across the piston 51, and the cylinder chamber 52 includes a first area. A fifth flow path 44E connecting the area 52A and the second area 52B is provided.

  A check valve 56 is provided in the fifth flow path 44E, and the check valve 56 is located inside the first area 52A when the operation handle 46 is opened and the valve 45 is opened. Thus, the first area 52A and the second area 52B are opened.

  In this case, the check valve 56 is configured to urge a ball (valve element) 58 by a spring 57 to maintain a closed state. The biasing pressure by the spring 57 (the release pressure of the check valve 56) is set to be higher than the normal liquid pressure inside the first area 52A of the cylinder chamber 52. That is, the release pressure of the check valve 56 is set higher than the supply pressure of the liquid (pure water) supplied to the flow path 44 (pipe).

  FIG. 10 is an explanatory view of the hand shower gun 40 in a state where the operation handle 46 is opened, and FIG. 11 is an explanatory view of the hand shower gun 40 in a state where the operation handle 46 is closed. As shown in FIG. 10, when the operation handle 46 is opened and the valve 45 is opened, the flow path 44 is opened and the liquid (pure water) is emitted from the liquid radiation port 42.

  In this case, when the operation handle 46 is opened to open the valve 45, the ball (valve element) 58 is attached to the spring 57 by the increased liquid pressure inside the first area 52 </ b> A of the cylinder chamber 52. It moves in the opening direction (upward direction in FIG. 10) against the bias pressure, the check valve 56 is opened, and the first area 52A and the second area 52B are opened via the fifth flow path 44E. Therefore, the piston 51 can be smoothly slid. After that, when the liquid pressure inside the first area 52A of the cylinder chamber 52 decreases, the ball (valve element) 58 moves in the closing direction (downward in FIG. 10) by the biasing pressure of the spring 57, The check valve 56 is closed.

  As shown in FIG. 11, when the operation handle 46 is closed and the valve 45 is closed, the flow path 44 is closed and the emission of the liquid (pure water) from the liquid emission port 42 is stopped. In this case, when the operation handle 46 is closed and the valve 45 is closed, liquid flows from the fourth flow path 44D into the cylinder chamber 52 (first area 52A) as the piston 51 slides. However, since the fluid resistance of the fourth flow path 44D is larger than the fluid resistance of the first flow path 44A, the speed at which the liquid flows into the cylinder chamber 52 (first area 52A) (per unit time) Inflow) becomes smaller. Therefore, the speed of sliding movement of the piston 51 is also reduced, and the speed at which the valve 45 is closed is also reduced. That is, the valve 45 is closed slowly.

  Such a substrate processing apparatus according to the second embodiment of the present invention also provides the same operational effects as those of the first embodiment. That is, damage to the flow path 44 (the flow path 44 inside the hand shower gun 40, the piping outside the hand shower gun 40) due to the water hammer phenomenon can be reduced, and the life can be extended.

  In the present embodiment, when the valve 45 is closed, liquid (pure water) flows from the fourth flow path 44D into the cylinder chamber 52 (first area 52A) as the piston 51 slides. In this case, however, the fluid resistance of the fourth flow path 44D is larger than the fluid resistance of the first flow path 44A, so the speed at which the liquid flows into the cylinder chamber 52 (first area 52A) (unit time) Per inflow) becomes smaller. Therefore, the speed of sliding movement of the piston 51 is also reduced, and the speed at which the valve 45 is closed is also reduced. Thus, by reducing the closing speed of the valve 45, it is possible to prevent the liquid pressure inside the first flow path 44A from excessively rising when the valve 45 is in the closed state. Thereby, damage to the flow path 44 (the flow path 44 inside the hand shower gun 40, the piping outside the hand shower gun 40) due to the water hammer phenomenon can be reduced.

  In the present embodiment, the fluid resistance of the fourth flow path 44D can be adjusted, so that the moving speed of the piston 51 (that is, the speed at which the valve 45 is closed) can be adjusted appropriately.

  In the present embodiment, when the valve 45 is opened, the check valve 56 is opened due to the liquid pressure inside the first area 52A of the cylinder chamber 52, and the first area 52A and the second area 52A. The area 52B is opened through the fifth flow path 44E, so that the liquid can move from the first area 52A to the second area 52B. Accordingly, the sliding movement of the piston 51 is not hindered by the liquid pressure, and the piston 51 can be smoothly slid.

(Modification 2)
FIG. 12 shows a modification of the second embodiment. As shown in FIG. 12, the water hammer reduction mechanism of the second embodiment can be applied to the atomizer 34. That is, the atomizer 34 includes a piston 51 that slides in conjunction with the opening / closing operation of the valve 45, and a cylinder chamber 52 in which the piston 51 is housed, and a flow path 44 formed inside the main body 43 of the atomizer 34. The first flow path 44A formed between the liquid supply port 41 and the valve 45, the second flow path 44B formed between the valve 45 and the liquid radiation port 42, and the first flow A fourth flow path 44D that connects the path 44A and the cylinder chamber 52 is formed. And the structure that the fluid resistance of 4th flow path 44D is larger than the fluid resistance of 44 A of 1st flow paths as a water hammer reduction mechanism is employ | adopted.

  Thus, by providing the atomizer 34 with the water hammer reduction mechanism, damage to the flow path 44 (the flow path 44 inside the atomizer 34 and the piping outside the atomizer 34) due to the water hammer phenomenon can be reduced.

(Third embodiment)
Next, a substrate processing apparatus according to a third embodiment of the present invention will be described. Here, the substrate processing apparatus according to the third embodiment will be described focusing on differences from the second embodiment. Unless otherwise stated here, the configuration and operation of the present embodiment are the same as those of the second embodiment.

  FIG. 13 is an explanatory diagram of the hand shower gun 40 of the present embodiment. As shown in FIG. 13, the hand shower gun 40 includes a piston 51 that slides in conjunction with the opening / closing operation of the valve 45, and a cylinder chamber 52 in which the piston 51 is housed. The flow path 44 formed inside the first flow path 44A formed between the liquid supply port 41 and the valve 45, and the second flow path formed between the valve 45 and the liquid radiation port 42. The channel 44 </ b> B and the fourth channel 44 </ b> D that connects the first channel 44 </ b> A and the cylinder chamber 52 are configured. In the present embodiment, a gap is provided between the outer periphery of the piston 51 and the inner periphery of the cylinder chamber 52, and the fourth flow path 44D is formed by this gap.

  Also in the present embodiment, as the water hammer reduction mechanism, a configuration in which the fluid resistance of the fourth flow path 44D is larger than the fluid resistance of the first flow path 44A is employed. For example, by setting the flow path area of the fourth flow path 44D to be smaller than the flow path area of the first flow path 44A, the fluid resistance of the fourth flow path 44D is greater than the fluid resistance of the first flow path 44A. Can be set large.

  Further, as shown in FIG. 13, the cylinder chamber 52 has a first area 52A (FIG. 13) that is an area for the piston 51 to slide when the operation handle 46 is opened and the valve 45 is opened. And a second area 52B (an area on the left side in FIG. 13) that is the area opposite to the first area across the piston 51. The cylinder chamber 52 includes a first area. A fifth flow path 44E connecting the area 52A and the second area 52B is provided.

  As in the second embodiment, a check valve 56 is provided in the fifth flow path 44E, and the check valve 56 is opened when the operation handle 46 is opened and the valve 45 is opened. Further, the first area 52A and the second area 52B are opened by being opened by the liquid pressure rising inside the first area 52A.

  Also in this case, the check valve 56 is configured to urge the ball (valve element) 58 by the spring 57 and maintain the closed state. The biasing pressure by the spring 57 (the release pressure of the check valve 56) is set to be higher than the normal liquid pressure inside the first area 52A of the cylinder chamber 52. That is, the release pressure of the check valve 56 is set higher than the supply pressure of the liquid (pure water) supplied to the flow path 44 (pipe).

  FIG. 14 is an explanatory diagram of the hand shower gun 40 in a state in which the operation handle 46 is opened, and FIG. 15 is an explanatory diagram of the hand shower gun 40 in a state in which the operation handle 46 is closed. As shown in FIG. 14, when the operation handle 46 is opened and the valve 45 is opened, the flow path 44 is opened and the liquid (pure water) is emitted from the liquid radiation port 42.

  Also in this case, when the operation handle 46 is opened and the valve 45 is opened, the ball (valve element) 58 is moved to the spring 57 by the increased liquid pressure inside the first area 52A of the cylinder chamber 52. It moves in the opening direction (upward in FIG. 14) against the biasing pressure, the check valve 56 is opened, and the first area 52A and the second area 52B are connected via the fifth flow path 44E. Since it opens, it becomes possible to slide the piston 51 smoothly. After that, when the liquid pressure inside the first area 52A of the cylinder chamber 52 decreases, the ball (valve element) 58 moves in the closing direction (downward in FIG. 14) by the biasing pressure of the spring 57, The check valve 56 is closed.

  As shown in FIG. 15, when the operation handle 46 is closed and the valve 45 is closed, the flow path 44 is closed and the emission of the liquid (pure water) from the liquid emission port 42 is stopped. In this case, when the operation handle 46 is closed and the valve 45 is closed, liquid flows from the fourth flow path 44D into the cylinder chamber 52 (first area 52A) as the piston 51 slides. However, since the fluid resistance of the fourth flow path 44D is larger than the fluid resistance of the first flow path 44A, the speed at which the liquid flows into the cylinder chamber 52 (first area 52A) (per unit time) Inflow) becomes smaller. Therefore, the speed of sliding movement of the piston 51 is also reduced, and the speed at which the valve 45 is closed is also reduced. That is, the valve 45 is closed slowly.

  Such a substrate processing apparatus according to the third embodiment of the present invention can achieve the same effects as those of the second embodiment. That is, damage to the flow path 44 (the flow path 44 inside the hand shower gun 40, the piping outside the hand shower gun 40) due to the water hammer phenomenon can be reduced, and the life can be extended.

(Modification 3)
FIG. 16 shows a modification of the third embodiment. As shown in FIG. 16, the water hammer reduction mechanism of the third embodiment can also be applied to the atomizer 34. That is, the atomizer 34 includes a piston 51 that slides in conjunction with the opening / closing operation of the valve 45, and a cylinder chamber 52 in which the piston 51 is housed, and a flow formed inside the main body 43 of the hand shower gun 40. The channel 44 includes a first channel 44A formed between the liquid supply port 41 and the valve 45, a second channel 44B formed between the valve 45 and the liquid radiation port 42, and a first channel 44B. The fourth flow path 44 </ b> D connecting the flow path 44 </ b> A and the cylinder chamber 52. Also in this case, a gap is provided between the outer circumference of the piston 51 and the inner circumference of the cylinder chamber 52, and the fourth flow path 44D is formed by this gap. And the structure that the fluid resistance of 4th flow path 44D is larger than the fluid resistance of 44 A of 1st flow paths as a water hammer reduction mechanism is employ | adopted.

  Thus, by providing the atomizer 34 with the water hammer reduction mechanism, damage to the flow path 44 (the flow path 44 inside the atomizer 34 and the piping outside the atomizer 34) due to the water hammer phenomenon can be reduced.

  The embodiments of the present invention have been described above by way of example, but the scope of the present invention is not limited to these embodiments, and can be changed or modified according to the purpose within the scope of the claims. is there.

  In the above description, the example in which the water hammer reducing mechanism is provided in the hand shower gun or the atomizer has been described. However, the water hammer reducing mechanism may be provided in a cleaning unit other than the hand shower gun or the atomizer. The liquid is not limited to pure water or ultrapure water, and may be other cleaning liquids.

  FIG. 17 shows a substrate processing apparatus according to another embodiment. As shown in FIG. 17, the substrate processing apparatus includes a polishing unit (not shown in FIG. 17) for polishing a substrate in the chamber, a hand shower gun 40 for cleaning the inside of the chamber, and a liquid ( A liquid supply line 60 for supplying pure water) is provided. A liquid discharge line 70 is branched from the liquid supply line 60. The liquid discharge line 70 is provided with a pressure relief valve 61 as a water hammer reduction mechanism. The pressure relief valve 61 is provided in the liquid supply line 60 at a position upstream of the hand shower gun 40 and sandwiching the orifice 62. The pressure relief valve 61 is activated when the valve (not shown in FIG. 17) inside the hand shower gun 40 is closed and the pressure of the liquid supply line 60 rises, and the pressure relief valve 61 is activated inside the hand shower gun 40 due to the water hammer phenomenon. Reduce the damage to the flow path. Thus, by providing the pressure relief valve 61 in the liquid supply line 60 (the liquid discharge line 70 branched from the liquid supply line 60), the flow to the flow path (the flow path inside the hand shower gun 40) due to the water hammer phenomenon. Damage can be reduced.

  FIG. 18 shows a substrate processing apparatus according to still another embodiment. As shown in FIG. 18, this substrate processing apparatus also has a polishing unit (not shown in FIG. 18) for polishing the substrate in the chamber, a hand shower gun 40 for cleaning the inside of the chamber, and a liquid ( A liquid supply line 60 for supplying pure water) is provided. In this case, the water hammer reducing mechanism is configured by a buffer tank 63 provided in the liquid supply line 60, and the buffer tank 63 is used when a valve (not shown in FIG. 18) inside the hand shower gun 40 is closed. A diaphragm 64 is provided. The diaphragm 64 operates when the valve (not shown in FIG. 18) inside the hand shower gun 40 is closed and the pressure of the liquid supply line 60 rises, and the flow inside the hand shower gun 40 due to the water hammer phenomenon. Reduce the damage to the road. Thus, by providing the buffer tank 63 having the diaphragm 64 in the liquid supply line 60, it is possible to reduce damage to the flow channel (the flow channel inside the hand shower gun 40) due to the water hammer phenomenon.

  FIG. 19 shows a substrate processing apparatus in still another embodiment. As shown in FIG. 19, this substrate processing apparatus also has a polishing unit (not shown in FIG. 19) for polishing the substrate in the chamber, a hand shower gun 40 for cleaning the inside of the chamber, and a liquid ( A liquid supply line 60 for supplying pure water) is provided. In this case, a liquid discharge line 70 is branched from the liquid supply line 60, and the water hammer reduction mechanism includes a pressure sensor 65 and a pressure relief valve 66 provided in the liquid discharge line 70. When the valve (not shown in FIG. 19) inside the hand shower gun 40 is closed, the pressure of the liquid supply line 60 rises. When the pressure sensor 65 detects this pressure increase, the pressure relief valve 66 is actuated to lower the pressure in the liquid supply line 60. Specifically, the pressure sensor 65 sends a detection signal to the control mechanism 67 when it detects a pressure increase in the liquid supply line 60. When receiving the detection signal from the pressure sensor 65, the control mechanism 67 sends an operation signal to the pressure relief valve 66. The pressure relief valve 66 operates when receiving an operation signal from the control mechanism 67 and reduces the pressure of the liquid supply line 60. Thus, by providing the pressure sensor 65 and the pressure relief valve 66 in the liquid supply line 60 (the liquid discharge line 70 branched from the liquid supply line 60), the flow path (the flow inside the hand shower gun 40) due to the water hammer phenomenon. Damage to the road) can be reduced.

  As described above, the substrate processing apparatus according to the present invention has an effect of reducing damage due to the water hammer phenomenon, and is useful as, for example, a substrate polishing apparatus.

DESCRIPTION OF SYMBOLS 1 Housing 3 Polishing part 4 Cleaning part 5 Control part 34 Atomizer 40 Hand shower gun 41 Liquid supply port 42 Liquid emission port 43 Main body 44 Channel 44A First channel 44B Second channel 44C Third channel 44D First 4 flow path 44E 5th flow path 45 Valve 46 Operation handle 47 Liquid supply tube 48 Pressure relief valve 51 Piston 52 Cylinder chamber 52A First area 52B Second area 54 Throttle mechanism (fluid resistance adjusting section)
55 Adjustment screw 56 Check valve 60 Liquid supply line 61 Pressure relief valve 62 Orifice 63 Buffer tank 64 Diaphragm 65 Pressure sensor 66 Pressure relief valve 70 Liquid discharge line

Claims (6)

In a substrate processing apparatus comprising: a substrate processing unit that performs substrate processing in a chamber; and a cleaning unit that performs cleaning processing in the chamber.
The washing unit is
A main body having a liquid supply port and a liquid radiation port;
A flow path formed between the liquid supply port and the liquid radiation port in the main body;
A valve provided in the flow path;
A piston that is provided in the valve and slides in conjunction with the opening and closing operation of the valve;
A cylinder chamber in which the piston is housed;
With
In the cleaning unit, when the valve is opened, the flow path is opened and liquid is emitted from the liquid radiation port. When the valve is closed, the flow path is blocked. Then, the emission of the liquid from the liquid emission port is stopped,
The flow path is provided with a water hammer reduction mechanism that operates when the valve is closed to reduce damage to the flow path due to a water hammer phenomenon ,
The flow path includes a first flow path formed between the liquid supply port and the valve, a second flow path formed between the valve and the liquid radiation port, and the valve. A third flow path that connects the first flow path and the second flow path without intervention, and a fourth flow path that connects the first flow path and the cylinder chamber,
The water hammer reducing mechanism is a pressure relief valve provided in the third flow path;
When the valve is in a closed state, the pressure relief valve is opened due to the liquid pressure rising inside the first flow path, and the first flow path and the second flow path are Opened,
The substrate processing apparatus , wherein the fluid resistance of the fourth channel is larger than the fluid resistance of the first channel . The pressure relief valve is configured to hold a closed state by an urging member,
Urging pressure by the biasing member is higher than the first flow path normal liquid pressure in the interior of lower than breakage occurred pressure damage due to water hammer phenomenon in the flow passage is generated, according to claim 1 Substrate processing equipment. Wherein the fourth flow path, the fluid resistance adjusting unit for adjusting the flow resistance of the fourth channel is provided, the substrate processing apparatus according to claim 1 or 2. The cylinder chamber is a first area that is an area for the piston to slide when the valve is in an open state, and a second area that is an area opposite to the first area across the piston. Including areas,
The cylinder chamber includes a fifth flow path that connects the first area and the second area,
A check valve is provided in the fifth flow path,
The check valve is opened by liquid pressure rising inside the first area when the valve is opened, and the first area and the second area are opened. Item 4. The substrate processing apparatus according to any one of Items 1 to 3 . The substrate processing unit is a polishing unit that polishes a substrate in the chamber,
The cleaning unit is a hand shower cancer of cleaning the chamber, the substrate processing apparatus according to any one of claims 1-4. The substrate processing unit is a polishing unit that polishes a substrate in the chamber,
The cleaning unit is a atomizer for cleaning the polishing section in the chamber, the substrate processing apparatus according to any one of claims 1-4.

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