JP6475247B2 - 基板に供給されるイオンビームを制御する処理装置及び方法 - Google Patents
基板に供給されるイオンビームを制御する処理装置及び方法 Download PDFInfo
- Publication number
- JP6475247B2 JP6475247B2 JP2016540634A JP2016540634A JP6475247B2 JP 6475247 B2 JP6475247 B2 JP 6475247B2 JP 2016540634 A JP2016540634 A JP 2016540634A JP 2016540634 A JP2016540634 A JP 2016540634A JP 6475247 B2 JP6475247 B2 JP 6475247B2
- Authority
- JP
- Japan
- Prior art keywords
- deflection electrode
- plasma
- extraction plate
- processing apparatus
- ion beam
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Links
- 239000000758 substrate Substances 0.000 title claims description 76
- 238000010884 ion-beam technique Methods 0.000 title claims description 69
- 238000000034 method Methods 0.000 title claims description 18
- 238000000605 extraction Methods 0.000 claims description 146
- 230000005499 meniscus Effects 0.000 claims description 44
- 238000004070 electrodeposition Methods 0.000 claims 6
- 150000002500 ions Chemical class 0.000 description 102
- 238000009826 distribution Methods 0.000 description 40
- 238000010586 diagram Methods 0.000 description 9
- 230000007423 decrease Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 238000011065 in-situ storage Methods 0.000 description 3
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 238000007654 immersion Methods 0.000 description 2
- 238000009616 inductively coupled plasma Methods 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000004088 simulation Methods 0.000 description 2
- BSYNRYMUTXBXSQ-UHFFFAOYSA-N Aspirin Chemical compound CC(=O)OC1=CC=CC=C1C(O)=O BSYNRYMUTXBXSQ-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000005513 bias potential Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000000615 nonconductor Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32412—Plasma immersion ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32357—Generation remote from the workpiece, e.g. down-stream
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32422—Arrangement for selecting ions or species in the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32568—Relative arrangement or disposition of electrodes; moving means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/336—Changing physical properties of treated surfaces
- H01J2237/3365—Plasma source implantation
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Plasma Technology (AREA)
- Electron Sources, Ion Sources (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US14/139,679 US9293301B2 (en) | 2013-12-23 | 2013-12-23 | In situ control of ion angular distribution in a processing apparatus |
| US14/139,679 | 2013-12-23 | ||
| PCT/US2014/069054 WO2015099988A1 (en) | 2013-12-23 | 2014-12-08 | In situ control of ion angular distribution in a processing apparatus |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2017510932A JP2017510932A (ja) | 2017-04-13 |
| JP2017510932A5 JP2017510932A5 (ja) | 2017-12-28 |
| JP6475247B2 true JP6475247B2 (ja) | 2019-03-06 |
Family
ID=53400795
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2016540634A Active JP6475247B2 (ja) | 2013-12-23 | 2014-12-08 | 基板に供給されるイオンビームを制御する処理装置及び方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US9293301B2 (zh) |
| JP (1) | JP6475247B2 (zh) |
| KR (1) | KR102213821B1 (zh) |
| CN (2) | CN105849852B (zh) |
| TW (1) | TWI648763B (zh) |
| WO (1) | WO2015099988A1 (zh) |
Families Citing this family (28)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10230458B2 (en) * | 2013-06-10 | 2019-03-12 | Nxp Usa, Inc. | Optical die test interface with separate voltages for adjacent electrodes |
| US9269542B2 (en) * | 2013-11-01 | 2016-02-23 | Varian Semiconductor Equipment Associates, Inc. | Plasma cathode charged particle lithography system |
| TWI690968B (zh) * | 2014-03-07 | 2020-04-11 | 美商應用材料股份有限公司 | 用於修改基板表面的掠射角電漿處理 |
| US9589769B2 (en) * | 2014-07-09 | 2017-03-07 | Varian Semiconductor Equipment Associates, Inc. | Apparatus and method for efficient materials use during substrate processing |
| US9514912B2 (en) * | 2014-09-10 | 2016-12-06 | Varian Semiconductor Equipment Associates, Inc. | Control of ion angular distribution of ion beams with hidden deflection electrode |
| US9230773B1 (en) * | 2014-10-16 | 2016-01-05 | Varian Semiconductor Equipment Associates, Inc. | Ion beam uniformity control |
| KR101943553B1 (ko) * | 2014-11-25 | 2019-04-18 | 삼성전자주식회사 | 좌우 대칭의 이온 빔을 이용한 패턴 형성 방법, 이를 이용한 자기 기억 소자의 제조방법, 및 좌우 대칭의 이온 빔을 발생시키는 이온 빔 장비 |
| US10128082B2 (en) * | 2015-07-24 | 2018-11-13 | Varian Semiconductor Equipment Associates, Inc. | Apparatus and techniques to treat substrates using directional plasma and point of use chemistry |
| US9706634B2 (en) * | 2015-08-07 | 2017-07-11 | Varian Semiconductor Equipment Associates, Inc | Apparatus and techniques to treat substrates using directional plasma and reactive gas |
| KR101754563B1 (ko) * | 2015-10-22 | 2017-07-06 | 세메스 주식회사 | 이온 빔 생성 장치, 그를 이용한 기판 처리 장치, 및 이온 빔 제어 방법 |
| US10141161B2 (en) * | 2016-09-12 | 2018-11-27 | Varian Semiconductor Equipment Associates, Inc. | Angle control for radicals and reactive neutral ion beams |
| US10730082B2 (en) * | 2016-10-26 | 2020-08-04 | Varian Semiconductor Equipment Associates, Inc. | Apparatus and method for differential in situ cleaning |
| US10535499B2 (en) * | 2017-11-03 | 2020-01-14 | Varian Semiconductor Equipment Associates, Inc. | Varied component density for thermal isolation |
| US10276340B1 (en) * | 2017-12-20 | 2019-04-30 | Varian Semiconductor Equipment Associates, Inc. | Low particle capacitively coupled components for workpiece processing |
| US11145496B2 (en) * | 2018-05-29 | 2021-10-12 | Varian Semiconductor Equipment Associates, Inc. | System for using O-rings to apply holding forces |
| US10468226B1 (en) * | 2018-09-21 | 2019-11-05 | Varian Semiconductor Equipment Associates, Inc. | Extraction apparatus and system for high throughput ion beam processing |
| US11195703B2 (en) | 2018-12-07 | 2021-12-07 | Applied Materials, Inc. | Apparatus and techniques for angled etching using multielectrode extraction source |
| US11715621B2 (en) | 2018-12-17 | 2023-08-01 | Applied Materials, Inc. | Scanned angled etching apparatus and techniques providing separate co-linear radicals and ions |
| WO2020131398A1 (en) | 2018-12-17 | 2020-06-25 | Applied Materials, Inc. | Modulation of rolling k vectors of angled gratings |
| US11056319B2 (en) * | 2019-07-29 | 2021-07-06 | Applied Materials, Inc. | Apparatus and system having extraction assembly for wide angle ion beam |
| US11270864B2 (en) * | 2020-03-24 | 2022-03-08 | Applied Materials, Inc. | Apparatus and system including extraction optics having movable blockers |
| US11948781B2 (en) * | 2020-06-16 | 2024-04-02 | Applied Materials, Inc. | Apparatus and system including high angle extraction optics |
| US11495430B2 (en) | 2020-07-15 | 2022-11-08 | Applied Materials, Inc. | Tunable extraction assembly for wide angle ion beam |
| US20220100078A1 (en) * | 2020-09-25 | 2022-03-31 | Applied Materials, Inc. | Devices and methods for variable etch depths |
| US11361935B2 (en) | 2020-11-07 | 2022-06-14 | Applied Materials, Inc. | Apparatus and system including high angle extraction optics |
| KR20220076976A (ko) * | 2020-12-01 | 2022-06-08 | 삼성전자주식회사 | 웨이퍼 처리 장치 |
| CN114914150A (zh) * | 2021-02-09 | 2022-08-16 | 广州禾信仪器股份有限公司 | 离子抓取装置和质谱仪 |
| US12014898B2 (en) * | 2021-09-27 | 2024-06-18 | Applied Materials, Inc. | Active temperature control for RF window in immersed antenna source |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5504340A (en) * | 1993-03-10 | 1996-04-02 | Hitachi, Ltd. | Process method and apparatus using focused ion beam generating means |
| US6612686B2 (en) | 2000-09-25 | 2003-09-02 | Picoliter Inc. | Focused acoustic energy in the preparation and screening of combinatorial libraries |
| US20060236931A1 (en) * | 2005-04-25 | 2006-10-26 | Varian Semiconductor Equipment Associates, Inc. | Tilted Plasma Doping |
| US7713430B2 (en) | 2006-02-23 | 2010-05-11 | Micron Technology, Inc. | Using positive DC offset of bias RF to neutralize charge build-up of etch features |
| US20070224709A1 (en) * | 2006-03-23 | 2007-09-27 | Tokyo Electron Limited | Plasma processing method and apparatus, control program and storage medium |
| JP4600426B2 (ja) * | 2006-06-26 | 2010-12-15 | 日新イオン機器株式会社 | イオン注入装置およびイオンビームの偏差角補正方法 |
| US20080132046A1 (en) * | 2006-12-04 | 2008-06-05 | Varian Semiconductor Equipment Associates, Inc. | Plasma Doping With Electronically Controllable Implant Angle |
| KR100868019B1 (ko) * | 2007-01-30 | 2008-11-10 | 삼성전자주식회사 | 플라즈마 쉬쓰 제어기를 갖는 이온 빔 장치 |
| US7867409B2 (en) | 2007-03-29 | 2011-01-11 | Tokyo Electron Limited | Control of ion angular distribution function at wafer surface |
| US8101510B2 (en) * | 2009-04-03 | 2012-01-24 | Varian Semiconductor Equipment Associates, Inc. | Plasma processing apparatus |
| KR20130124149A (ko) * | 2011-03-11 | 2013-11-13 | 베리안 세미콘덕터 이큅먼트 어소시에이츠, 인크. | 이온 주입을 사용하는 기판 패턴화된 특징부들의 수정 방법 및 시스템 |
| US8288741B1 (en) | 2011-08-16 | 2012-10-16 | Varian Semiconductor Equipment Associates, Inc. | Apparatus and method for three dimensional ion processing |
-
2013
- 2013-12-23 US US14/139,679 patent/US9293301B2/en active Active
-
2014
- 2014-12-08 WO PCT/US2014/069054 patent/WO2015099988A1/en active Application Filing
- 2014-12-08 KR KR1020167019833A patent/KR102213821B1/ko active IP Right Grant
- 2014-12-08 CN CN201480070125.XA patent/CN105849852B/zh active Active
- 2014-12-08 JP JP2016540634A patent/JP6475247B2/ja active Active
- 2014-12-08 CN CN201710893518.6A patent/CN107658201B/zh active Active
- 2014-12-18 TW TW103144196A patent/TWI648763B/zh active
-
2016
- 2016-03-09 US US15/065,141 patent/US9620335B2/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| US9620335B2 (en) | 2017-04-11 |
| TWI648763B (zh) | 2019-01-21 |
| US9293301B2 (en) | 2016-03-22 |
| JP2017510932A (ja) | 2017-04-13 |
| TW201532114A (zh) | 2015-08-16 |
| CN107658201A (zh) | 2018-02-02 |
| US20160189935A1 (en) | 2016-06-30 |
| US20150179409A1 (en) | 2015-06-25 |
| KR20160102034A (ko) | 2016-08-26 |
| KR102213821B1 (ko) | 2021-02-09 |
| CN105849852A (zh) | 2016-08-10 |
| CN105849852B (zh) | 2017-10-31 |
| WO2015099988A1 (en) | 2015-07-02 |
| CN107658201B (zh) | 2019-11-05 |
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