JP6470122B2 - 光検出器 - Google Patents
光検出器 Download PDFInfo
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- JP6470122B2 JP6470122B2 JP2015121736A JP2015121736A JP6470122B2 JP 6470122 B2 JP6470122 B2 JP 6470122B2 JP 2015121736 A JP2015121736 A JP 2015121736A JP 2015121736 A JP2015121736 A JP 2015121736A JP 6470122 B2 JP6470122 B2 JP 6470122B2
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Description
はじめに、本発明の実施の形態1について図1,図2を用いて説明する。図1は、本発明の実施の形態1における光検出器の構成を示す斜視図である。また、図2は、本発明の実施の形態1における光検出器の一部構成を示す斜視図である。
次に、本発明の実施の形態2について図3,図4を用いて説明する。図3は、本発明の実施の形態2における光検出器の構成を示す斜視図である。また、図4は、本発明の実施の形態2における光検出器の一部構成を示す断面図である。
Claims (4)
- 基板の上に設けられた入力導波路と、
前記入力導波路に光接続し、対象とする光の回折限界以下の幅および厚さとされた細線構造のシリコンから構成された電子だめと、
前記電子だめの両方の側面に接して形成された第1金属層,第2金属層と、
前記電子だめの他端に接続してシリコンから構成された電子箱と、
前記電子箱の手前の一部の前記電子だめの上に形成された制御電極と、
前記電子箱をゲート電極とする単電子トランジスタと
を備え、
前記電子だめ、前記第1金属層、前記第2金属層によりプラズモニクス導波路が構成され、
前記第1金属層,前記第2金属層は、前記電子だめにショットキ接続していることを特徴とする光検出器。 - 請求項1記載の光検出器において、
前記入力導波路を構成する前記基板の上に形成されたコアと、
前記基板の上で前記コアの一端と前記電子だめの一端とを連結してシリコンから形成され、前記コアから前記電子だめにかけて暫時細くなるモード変換部と
を備えることを特徴とする光検出器。 - 請求項1記載の光検出器において、
前記電子だめと平行に延在する部分を備えて前記電子だめの上に離間して配置されたコアを備え、
前記コアにより前記入力導波路が構成されている
ことを特徴とする光検出器。 - 請求項1〜3のいずれか1項に記載の光検出器において、
前記第1金属層,前記第2金属層に負バイアスを印加する手段を備えることを特徴とする光検出器。
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JP2015121736A JP6470122B2 (ja) | 2015-06-17 | 2015-06-17 | 光検出器 |
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JP2015121736A JP6470122B2 (ja) | 2015-06-17 | 2015-06-17 | 光検出器 |
Publications (2)
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JP2017010973A JP2017010973A (ja) | 2017-01-12 |
JP6470122B2 true JP6470122B2 (ja) | 2019-02-13 |
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JP2015121736A Active JP6470122B2 (ja) | 2015-06-17 | 2015-06-17 | 光検出器 |
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JP (1) | JP6470122B2 (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
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US20230007949A1 (en) * | 2020-01-22 | 2023-01-12 | Nippon Telegraph And Telephone Corporation | Optical Device |
CN113078428B (zh) * | 2021-03-31 | 2022-03-15 | 电子科技大学 | 一种基于模式转换的空间功率合成倍频器 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
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US7170142B2 (en) * | 2003-10-03 | 2007-01-30 | Applied Materials, Inc. | Planar integrated circuit including a plasmon waveguide-fed Schottky barrier detector and transistors connected therewith |
US8417070B2 (en) * | 2009-09-30 | 2013-04-09 | Intel Corporation | Waveguide coupled surface plasmon polarition photo detector |
JP6077887B2 (ja) * | 2013-03-04 | 2017-02-08 | 日本電信電話株式会社 | 光導波路モード変換器 |
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