JP2017010973A - 光検出器 - Google Patents
光検出器 Download PDFInfo
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- JP2017010973A JP2017010973A JP2015121736A JP2015121736A JP2017010973A JP 2017010973 A JP2017010973 A JP 2017010973A JP 2015121736 A JP2015121736 A JP 2015121736A JP 2015121736 A JP2015121736 A JP 2015121736A JP 2017010973 A JP2017010973 A JP 2017010973A
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- electron
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- electron reservoir
- photodetector
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- 230000003287 optical effect Effects 0.000 title abstract description 10
- 239000002184 metal Substances 0.000 claims abstract description 43
- 229910052751 metal Inorganic materials 0.000 claims abstract description 43
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 22
- 239000010703 silicon Substances 0.000 claims abstract description 22
- 239000000758 substrate Substances 0.000 claims abstract description 21
- 238000006243 chemical reaction Methods 0.000 claims abstract description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 20
- 239000000969 carrier Substances 0.000 description 11
- 238000005036 potential barrier Methods 0.000 description 8
- 238000010521 absorption reaction Methods 0.000 description 5
- 238000001514 detection method Methods 0.000 description 4
- 230000005284 excitation Effects 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 238000005253 cladding Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
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- Light Receiving Elements (AREA)
- Optical Integrated Circuits (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
Description
はじめに、本発明の実施の形態1について図1,図2を用いて説明する。図1は、本発明の実施の形態1における光検出器の構成を示す斜視図である。また、図2は、本発明の実施の形態1における光検出器の一部構成を示す斜視図である。
次に、本発明の実施の形態2について図3,図4を用いて説明する。図3は、本発明の実施の形態2における光検出器の構成を示す斜視図である。また、図4は、本発明の実施の形態2における光検出器の一部構成を示す断面図である。
Claims (3)
- 基板の上に設けられた入力導波路と、
前記入力導波路に光接続し、対象とする光の回折限界以下の幅および厚さとされた細線構造のシリコンから構成された電子だめと、
前記電子だめの両方の側面に接して形成された第1金属層,第2金属層と、
前記電子だめの他端に接続してシリコンから構成された電子箱と、
前記電子箱の手前の一部の前記電子だめの上に形成された制御電極と、
前記電子箱をゲート電極とする単電子トランジスタと
を備え、
前記電子だめ、前記第1金属層、前記第2金属層によりプラズモニクス導波路が構成されていることを特徴とする光検出器。 - 請求項1記載の光検出器において、
前記入力導波路を構成する前記基板の上に形成されたコアと、
前記基板の上で前記コアの一端と前記電子だめの一端とを連結してシリコンから形成され、前記コアから前記電子だめにかけて暫時細くなるモード変換部と
を備えることを特徴とする光検出器。 - 請求項1記載の光検出器において、
前記電子だめと平行に延在する部分を備えて前記電子だめの上に離間して配置されたコアを備え、
前記コアにより前記入力導波路が構成されている
ことを特徴とする光検出器。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015121736A JP6470122B2 (ja) | 2015-06-17 | 2015-06-17 | 光検出器 |
Applications Claiming Priority (1)
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JP2015121736A JP6470122B2 (ja) | 2015-06-17 | 2015-06-17 | 光検出器 |
Publications (2)
Publication Number | Publication Date |
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JP2017010973A true JP2017010973A (ja) | 2017-01-12 |
JP6470122B2 JP6470122B2 (ja) | 2019-02-13 |
Family
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JP2015121736A Active JP6470122B2 (ja) | 2015-06-17 | 2015-06-17 | 光検出器 |
Country Status (1)
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JP (1) | JP6470122B2 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113078428A (zh) * | 2021-03-31 | 2021-07-06 | 电子科技大学 | 一种基于模式转换的空间功率合成倍频器 |
WO2021149183A1 (ja) * | 2020-01-22 | 2021-07-29 | 日本電信電話株式会社 | 光デバイス |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20050104684A1 (en) * | 2003-10-03 | 2005-05-19 | Applied Materials, Inc. | Planar integrated circuit including a plasmon waveguide-fed schottky barrier detector and transistors connected therewith |
JP2014160881A (ja) * | 2009-09-30 | 2014-09-04 | Intel Corp | 導波路結合された表面プラズモンポラリトン光検出器 |
JP2014170126A (ja) * | 2013-03-04 | 2014-09-18 | Nippon Telegr & Teleph Corp <Ntt> | 光導波路モード変換器 |
-
2015
- 2015-06-17 JP JP2015121736A patent/JP6470122B2/ja active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20050104684A1 (en) * | 2003-10-03 | 2005-05-19 | Applied Materials, Inc. | Planar integrated circuit including a plasmon waveguide-fed schottky barrier detector and transistors connected therewith |
JP2014160881A (ja) * | 2009-09-30 | 2014-09-04 | Intel Corp | 導波路結合された表面プラズモンポラリトン光検出器 |
JP2014170126A (ja) * | 2013-03-04 | 2014-09-18 | Nippon Telegr & Teleph Corp <Ntt> | 光導波路モード変換器 |
Non-Patent Citations (1)
Title |
---|
K. NISHIGUCHI ET AL.: "Infrared detection with silicon nano-field-effect transistors", APPLIED PHYSICS LETTERS, vol. 90, JPN7018001519, 30 May 2007 (2007-05-30), US, pages 223108 - 1, ISSN: 0003793866 * |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2021149183A1 (ja) * | 2020-01-22 | 2021-07-29 | 日本電信電話株式会社 | 光デバイス |
JPWO2021149183A1 (ja) * | 2020-01-22 | 2021-07-29 | ||
JP7315034B2 (ja) | 2020-01-22 | 2023-07-26 | 日本電信電話株式会社 | 光デバイス |
CN113078428A (zh) * | 2021-03-31 | 2021-07-06 | 电子科技大学 | 一种基于模式转换的空间功率合成倍频器 |
CN113078428B (zh) * | 2021-03-31 | 2022-03-15 | 电子科技大学 | 一种基于模式转换的空间功率合成倍频器 |
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JP6470122B2 (ja) | 2019-02-13 |
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