JP6451362B2 - Magnetoresistive device - Google Patents

Description

  The present invention relates to a magnetoresistive effect device using a magnetoresistive effect element.

  In recent years, microwave oscillation and electromagnetic wave reception by a magnetoresistive effect element have been studied. For example, Patent Document 1 discloses that a CCP-CPP oscillation element oscillates when a direct current and a magnetic field are applied to a CCP-CPP (Current Confined Path-Current Perpendicular to Plane) oscillation element that is a magnetoresistive effect element. ing. Patent Document 2 discloses that when an alternating current and a magnetic field are applied to a magnetoresistive effect element, the magnetoresistive effect element outputs a direct current component and exhibits an AC signal receiving action.

JP 2007-124340 A JP 2008-170416 A

  If a receiver or transmitter is configured by connecting a magnetic field application mechanism and an antenna to the CCP-CPP oscillation element, it can be applied to wireless communication or the like. However, in the prior art, since it is necessary to connect the magnetic field application mechanism and the antenna together to the CCP-CPP oscillation element, there is a problem that it is difficult to reduce the size of the receiver or transmitter using the CCP-CPP oscillation element. . Miniaturization of a receiver or a transmitter is important, for example, in a mobile terminal where compact and high-density mounting is progressing.

In order to achieve the above object, according to a first aspect of the present invention, a magnetoresistive effect element, a first electrode and a second electrode for applying a current or voltage to the magnetoresistive effect element, and the magnetoresistive element are provided. An annular metal magnetic body capable of applying a magnetic field to the effect element; the metal magnetic body has a first end and a second end; and the magnetoresistive effect element is the first And a magnetic field between the first and second ends is applied, and the first portion of the metal magnetic body on the first end side is stronger than the first electrode than the first electrode. And the second portion of the metal magnetic body on the second end side is stronger than the second electrode in comparison with the second electrode. The first and second electrical connections are capacitive. Providing a magnetoresistive effect device, which is a multiplexer.

According to the first aspect, according to the magnetoresistive effect device of the present invention, a magnetic field generated between the first and second end portions can be applied to the magnetoresistive effect element by the annular metal magnetic body. In addition, the first part of the metal magnetic body is more strongly electrically connected to the first electrode than the second electrode, and the second part is more strongly electrically connected to the second electrode than the first electrode. Therefore, the AC voltage generated between the first part and the second part when the electromagnetic wave is received by the ring-shaped metal magnetic material is applied to the first electrical part between the first part and the first electrode. The connection and the second electrical connection between the second part and the second electrode can be applied between the first electrode and the second electrode, and an AC voltage is efficiently applied to the magnetoresistive element. be able to. Further, the DC output generated from the magnetoresistive effect element by applying the magnetic field and the AC voltage does not flow out to the annular metal magnetic material side that is DC-insulated by capacitive coupling, and the first electrode and the second electrode. It can be taken out from the second electrode. That is, the magnetoresistive device of the present invention operates as a receiver.

On the other hand, as described below, the magnetoresistive effect device also operates as a transmitter. When a direct current is applied between the first electrode and the second electrode, the direct current is applied to the magnetoresistive effect element without flowing out to the ring-shaped metal magnetic material side that is insulated in terms of direct current by capacitive coupling. The The magnetoresistive effect element oscillates by applying a magnetic field and a direct current, and the first part is more strongly electrically connected to the first electrode than the second electrode, and the second part is the first electrode. The AC voltage generated between the first electrode and the second electrode due to the oscillation of the magnetoresistive effect element is more strongly connected to the second electrode than the second electrode. Can be applied between two parts. By the alternating voltage applied between the first part and the second part, the annular metal magnetic body can transmit the oscillation output as an electromagnetic wave as an antenna. That is, the magnetoresistive effect device of the present invention operates as a transmitter.

Therefore, in response to the problem that miniaturization is difficult because an antenna for receiving or transmitting electromagnetic waves and a magnetic field application mechanism are separately provided, a configuration in which the antenna and the magnetic field application mechanism can be used together, Miniaturization can be realized.

  In the second aspect of the present invention, in the magnetoresistive effect device according to the first aspect, the distance between the first part and the first electrode is compared with the distance between the first part and the second electrode. The magnetoresistive effect device is characterized in that the distance between the second part and the second electrode is shorter than the distance between the second part and the first electrode. In addition, “distance” in the present specification means a minimum distance between two parts.

  According to this, the first part is more strongly electrically connected to the first electrode compared to the second electrode, and the second part is more strongly electrically connected to the second electrode than the first electrode. The state connected to can be realized with a simple configuration.

  According to a third aspect of the present invention, in the magnetoresistive effect device according to the second aspect, the first electrode and the second electrode are arranged in the magnetoresistive effect element in the film stacking direction. The magnetoresistive effect device is provided, wherein the first end portion is disposed so as to overlap the surface of the first electrode.

According to this, a state in which the distance between the first portion and the first electrode is shorter than the distance between the first portion and the second electrode can be realized with a simple configuration. Furthermore, a magnetic field having a component perpendicular to the film surface can be applied to the magnetoresistive element. This is a more preferable form for a magnetoresistive effect element whose reception or transmission characteristics are improved by applying a magnetic field having a component perpendicular to the film surface.

  According to a fourth aspect of the present invention, in the magnetoresistive effect device according to the third aspect, the second end portion is disposed so as to overlap the surface of the second electrode. Provide the device.

According to this, a state in which the distance between the second portion and the second electrode is shorter than the distance between the second portion and the first electrode can be realized with a simple configuration. Furthermore, a magnetic field having a component perpendicular to the film surface can be applied to the magnetoresistive element. This is a more preferable form for a magnetoresistive effect element whose reception or transmission characteristics are improved by applying a magnetic field having a component perpendicular to the film surface.

  According to a fifth aspect of the present invention, in the magnetoresistive effect device according to the first aspect, the magnetoresistive effect device includes the first metal protrusion portion electrically connected to the first portion and the first electrode, The distance between the metal protrusion and the first electrode is shorter than the distance between the first portion and the first electrode, and shorter than the distance between the first metal protrusion and the second electrode. A magnetoresistive effect device is provided.

According to this, the first portion can be more strongly electrically connected to the first electrode than the second electrode by the first metal protrusion. In addition, the degree of freedom of the position of the first end that functions as the magnetic pole of the magnetic field applied to the magnetoresistive effect element can be increased, and an effective magnetic field can be applied to the magnetoresistive effect element.

  According to a sixth aspect of the present invention, in the magnetoresistive effect device according to the fifth aspect, the magnetoresistive effect device has a second metal protrusion electrically connected to the second portion and the second electrode, The distance between the second metal projection and the second electrode is shorter than the distance between the second portion and the second electrode, and the distance between the second metal projection and the first electrode. The magnetoresistive effect device is also characterized by being short.

According to this, the second end portion can be more strongly electrically connected to the second electrode than the first electrode by the second metal protrusion. In addition, the degree of freedom of the position of the second end that functions as the magnetic pole of the magnetic field applied to the magnetoresistive effect element can be increased, and an effective magnetic field can be applied to the magnetoresistive effect element.

  According to a seventh aspect of the present invention, in the magnetoresistive effect device according to the first aspect, the first magnetic flux guide metallic magnetic body electrically connected to the first portion and the first electrode, One end portion of the first magnetic guide for magnetic flux guide is disposed closer to the magnetoresistive effect element than the first end portion, and the magnetoresistive effect element is used for the first magnetic flux guide. A magnetoresistive effect device is provided in which the magnetic field is applied through a metal magnetic material.

According to this, since the end of the first magnetic magnetic material for guiding the magnetic flux can be brought closer to the magnetoresistive effect element than the first end of the metal magnetic material, a stronger magnetic field is applied to the magnetoresistive effect element. can do. This is a more preferable form for a magnetoresistive element whose reception or transmission characteristics are improved by applying a strong magnetic field.

  According to an eighth aspect of the present invention, in the magnetoresistive effect device according to the seventh aspect, the third metal protrusion electrically connected to the first magnetic flux guide metal magnetic body and the first electrode. And the distance between the first electrode and the third metal protrusion is shorter than the distance between the first electrode and the first magnetic flux guide metal magnetic body, and the second electrode The magnetoresistive effect device is characterized in that it is shorter than the distance between the third metal protrusion and the third metal protrusion.

According to this, the first part is compared with the second electrode by the electrical connection between the first magnetic flux guide metal magnetic body and the first electrode by the third metal protrusion, and the first electrode is more It can be connected strongly and electrically. Furthermore, the third metal protrusion can increase the degree of freedom of the arrangement of the first magnetic flux guide metal magnetic body, and an effective magnetic field can be applied to the magnetoresistive element.

  According to a ninth aspect of the present invention, in the magnetoresistive effect device according to the seventh aspect or the eighth aspect, the second magnetic flux guide metal electrically connected to the second portion and the second electrode. One end of the second magnetic flux guide metal magnetic body is disposed closer to the magnetoresistive element than the second end, and the magnetoresistive element is A magnetoresistive effect device is provided, wherein the magnetic field is applied through a second magnetic magnetic material for magnetic flux guide.

According to this, since the end portions of the first and second magnetic flux guide metal magnetic bodies can be brought closer to the magnetoresistive effect element than the first and second end portions of the metal magnetic bodies, a stronger magnetic field can be generated. It can be applied to the magnetoresistive element. This is a more preferable form for a magnetoresistive element whose reception or transmission characteristics are improved by applying a strong magnetic field.

  According to a tenth aspect of the present invention, in the magnetoresistive effect device according to the ninth aspect, the fourth metal protrusion electrically connected to the second magnetic flux guide metal magnetic body and the second electrode. The distance between the second electrode and the fourth metal protrusion is shorter than the distance between the second electrode and the second magnetic flux guide metal magnetic body, and the first electrode And a magnetoresistive effect device characterized by being shorter than a distance between the fourth metal protrusion and the fourth metal protrusion.

According to this, the second end portion is compared with the first electrode by the electrical connection between the second magnetic guide metal magnetic body for magnetic flux guide and the second electrode by the fourth metal projection, and the second end portion is compared with the second electrode. It can be more strongly electrically connected to the electrode. Furthermore, the fourth metal protrusion can increase the degree of freedom of arrangement of the second magnetic flux guide metal magnetic body, and an effective magnetic field can be applied to the magnetoresistive element.

  According to an eleventh aspect of the present invention, there is provided the magnetoresistive effect device according to the fifth aspect, wherein the first metal protrusion is a nonmagnetic metal.

According to this, since the first metal protrusion is a nonmagnetic metal, the magnetic field from the metal magnetic material is applied to the magnetoresistive element without being affected by the first metal protrusion. This is a more preferable form for a magnetoresistive element whose reception or transmission characteristics are improved by applying a magnetic field with high accuracy.

  According to a twelfth aspect of the present invention, there is provided the magnetoresistive effect device according to the sixth aspect, wherein the second metal protrusion is a nonmagnetic metal.

According to this, since the second metal protrusion is a nonmagnetic metal, the magnetic field from the metal magnetic material is applied to the magnetoresistive element without being affected by the second metal protrusion. This is a more preferable form for a magnetoresistive element whose reception or transmission characteristics are improved by applying a magnetic field with high accuracy.

  According to a thirteenth aspect of the present invention, there is provided the magnetoresistive effect device according to the eighth aspect, wherein the third metal protrusion is a nonmagnetic metal.

According to this, since the third metal protrusion is a non-magnetic metal, a magnetic field is applied to the magnetoresistive effect element through the first magnetic flux guide metal magnetic body without being affected by the third metal protrusion. The This is a more preferable form for a magnetoresistive element whose reception or transmission characteristics are improved by applying a magnetic field with high accuracy.

  According to a fourteenth aspect of the present invention, there is provided the magnetoresistive effect device according to the tenth aspect, wherein the fourth metal protrusion is a nonmagnetic metal.

According to this, since the fourth metal protrusion is a nonmagnetic metal, a magnetic field is applied to the magnetoresistive effect element via the second magnetic flux guide metal magnetic body without being affected by the fourth metal protrusion. The This is a more preferable form for a magnetoresistive element whose reception or transmission characteristics are improved by applying a magnetic field with high accuracy.

  According to a fifteenth aspect of the present invention, in the magnetoresistive effect device according to any one of the first to fourteenth aspects, a current line is wound around the metal magnetic body, and a current flowing through the current line is reduced. There is provided a magnetoresistive effect device characterized in that the strength of the magnetic field can be adjusted by changing the strength.

According to this, since the magnetic field strength between the first and second end portions can be adjusted, the magnetic field strength applied to the magnetoresistive effect element can be changed. Since both the frequency at which the magnetoresistive effect element receives the alternating current signal and the frequency at which the alternating current signal oscillates can be changed by the magnetic field strength applied to the magnetoresistive effect element, the frequency of reception or transmission of the magnetoresistive effect device is changed. This is the preferred form when desired.

  The present invention has been made in view of the above, and can provide a small-sized magnetoresistive effect device with a configuration in which a magnetic field application mechanism and an antenna can be used together.

2 is a schematic diagram illustrating a configuration example of a magnetoresistive effect device according to Embodiment 1. FIG. It is sectional drawing which shows a part of magnetoresistive effect device based on Embodiment 1 which expands and shows a part of FIG. It is sectional drawing which shows the structural example of a magnetoresistive effect element. 6 is a schematic diagram illustrating a configuration example of a magnetoresistive effect device according to Embodiment 2. FIG. It is sectional drawing which shows a part of magnetoresistive effect device based on Embodiment 2 which expands and shows a part of FIG. 6 is a schematic diagram illustrating a configuration example of a magnetoresistive effect device according to Embodiment 3. FIG. It is sectional drawing which shows a part of magnetoresistive effect device based on Embodiment 3 which expands and shows a part of FIG.

  Hereinafter, an example of an embodiment for carrying out the present invention will be described with reference to the drawings. The following description exemplifies a part of the embodiment of the present invention, and the technical scope of the present invention is not limited to the content of the following description.

(Embodiment 1)
FIG. 1 shows a magnetoresistive device 100 according to Embodiment 1 of the present invention. The magnetoresistive effect device 100 includes an element portion P, an annular metal magnetic body 104, and a current line 105.

FIG. 2 is a cross-sectional view taken along the line B-C in which the portion A including the element portion P of the magnetoresistive effect device 100 in FIG. 1 is enlarged. The element portion P includes a magnetoresistive effect element 101, and a first electrode 102 and a second electrode 103 for applying a current or voltage to the magnetoresistive effect element 101. The annular metallic magnetic body 104 has a first end portion 106 and a second end portion 107, and a first portion 108 on the first end portion 106 side and a second portion on the second end portion 107 side. 109. The element portion P is located between the first end portion 106 and the second end portion 107.

The first electrode 102 and the second electrode 103 are disposed via the magnetoresistive effect element 101 in the film stacking direction of the magnetoresistive effect element 101, connected to a current source or a voltage source, and connected to the magnetoresistive effect element 101. An electric current or a voltage can be applied in the film stacking direction. The first electrode 102 and the second electrode 103 are connected to a detection circuit for taking out a direct current output by a spin torque diode effect described later. The current line 105 is wound around the annular metal magnetic body 104, and the magnetic field strength generated between the first end portion 106 and the second end portion 107 is changed by changing the strength of the current passed through the current line 105. Can be changed. The magnetoresistive effect element 101 is arranged such that a magnetic field between the first end 106 and the second end 107 is applied.

The first end portion 106 is disposed so as to overlap the surface of the first electrode 102, and the second end portion 107 is disposed so as to overlap the surface of the second electrode 103. The distance between the second portion 109 and the second electrode 103 is shorter than the distance between the first portion 108 and the second electrode 103, and the distance between the second portion 109 and the second electrode 103 is smaller than that between the second portion 109 and the second electrode 103. It is shorter than the distance from one electrode 102. Thus, the first portion 108 is more strongly electrically connected to the first electrode 102 than the second electrode 103 by the first electrical connection, and the second portion 109 is connected to the first electrode 102. In comparison, the second electrode 103 is more strongly electrically connected by the second electrical connection.

Further, since the first end 106 and the second end 107 are arranged in this way, a magnetic field having a component in the direction perpendicular to the film surface is applied to the magnetoresistive element 101.

The first portion 108 is disposed so as to be insulated from the first electrode 102 in terms of direct current and capacitively coupled in terms of alternating current. Similarly, the second portion 109 is disposed so as to be insulated from the second electrode 103 in a direct current and capacitively coupled in an alternating current. Specifically, aluminum oxide (Al ₂ O ₃ ) or silicon oxide (SiO ₂ ) that is an insulator exists between the first portion 108 and the first electrode 102, and the first portion 108 and the first electrode 102 are present. Similarly, Al ₂ O ₃ or SiO ₂ exists between the second portion 109 and the second electrode 103, and the second portion 109 and the second electrode 103 are capacitively coupled. In addition, the magnetoresistive effect device 100 is configured. Further, Al ₂ O ₃ or SiO ₂ may also exist around the element portion P.

The first electrode 102 and the second electrode 103 are preferably made of a high conductivity material such as Cu, Au, or AuCu.

FIG. 3 is a cross-sectional view of the magnetoresistive effect element 101. The magnetoresistive effect element 101 includes a magnetization fixed layer 31, a spacer layer 32, and a magnetization free layer 33, and the magnetization fixed layer 31 and the magnetization free layer 33 are disposed via the spacer layer 32. In addition, the magnetoresistive element 101 is processed by a known photolithography method and etching method so that the shape in plan view becomes a circular shape, an elliptical shape, a square shape, a rectangular shape, or the like. Furthermore, when the shape in plan view is a circle, the diameter is used. When the shape is elliptical, at least the short axis of the short axis and the long axis. At least the short side of the sides is preferably 100 nm or less. Thereby, the magnetic domain of the magnetization free layer 33 can be changed to a single domain, and the spin torque diode effect can be effectively expressed. Here, the spin torque diode effect is a rectification effect in which a DC voltage is generated when a high frequency signal is input to the magnetoresistive effect element 101.

The magnetization fixed layer 31 has a function in which the magnetization direction is not changed by an external magnetic field. The magnetization fixed layer 31 is preferably made of a high spin polarizability material such as Fe, Co, Ni, FeCo, or CoFeB. Thereby, a high magnetoresistance change rate can be obtained. The thickness of the magnetization fixed layer 31 is preferably 1 nm to 10 nm. If the film thickness is too thin, the magnetoresistance change rate tends to decrease. If the film thickness is too thick, the magnetization direction of the magnetization fixed layer 31 is likely to change due to an external magnetic field. Although not shown, an antiferromagnetic layer made of a material such as PtMn, FeMn, or IrMn may be inserted between the magnetization fixed layer 31 and the first electrode 102. As a result, the fixed strength in the magnetization direction of the magnetization fixed layer 31 can be increased.

The spacer layer 32 has a function of obtaining a magnetoresistance effect by causing the magnetization of the magnetization fixed layer 31 and the magnetization of the magnetization free layer 33 to interact with each other. The spacer layer 32 may be made of a nonmagnetic conductive material such as Cu or Ag, or may be made of a nonmagnetic insulating material such as AlO _x (aluminum oxide), MgO (magnesium oxide), or MgAl ₂ O _4. Also good. When the spacer layer 32 is made of a conductive material, the magnetoresistive effect element 3 exhibits a giant magnetoresistance (GMR) effect. When the spacer layer 32 is made of an insulating material, the magnetoresistive effect element 3 is tunneled. Magnetoresistive (TMR) effect appears. In order to obtain a high magnetoresistance change rate, it is preferable to use the TMR effect. When utilizing the TMR effect, the thickness of the spacer layer 32 is preferably about 0.5 nm to 3.0 nm. If the film thickness is too thin, pinholes are likely to be generated in the spacer layer 32, and if pinholes are generated, a leakage current flows, which is not preferable. If the film thickness is too thick, the resistance value of the magnetoresistive effect element 101 becomes large. Therefore, when the annular metal magnetic body 104 acts as an antenna for transmitting and receiving electromagnetic waves as will be described later, the element portion P and the metal magnetism An impedance mismatch between the body 104 and the body 104 is not preferable.

Furthermore, the spacer layer 32 may have a current confinement structure in which a current confinement path exists in the insulating layer. In this case, AlO _x , MgO, or the like can be used as the insulating layer, and a non-magnetic conductive material such as Cu, Ag, Au, or Ru, an alloy of Fe and Co, an alloy of Fe, Co, and Al can be used as the current confinement path. Alternatively, a magnetic conductive material such as an alloy of Fe, Co, Al, and Si can be used.

The magnetization free layer 33 has a function of changing the magnetization direction by an external magnetic field. The magnetization free layer 33 is preferably composed of a high spin polarizability material such as Fe, Co, Ni, FeCo, or CoFeB. Thereby, a high magnetoresistance change rate can be obtained. When the film thickness of the magnetization free layer 33 is t1 and the film thickness of the magnetization fixed layer 31 is t2, it is preferable that 0.4 nm <t1 <t2. When t1 becomes smaller than 0.4 nm, the saturation magnetization amount of the magnetization free layer 33 is remarkably reduced, so that the magnetoresistance change rate is remarkably reduced.

Although not shown, a cap layer, a seed layer, a buffer layer, or the like may be included between the first electrode 102 and the magnetoresistive effect element 101 and between the magnetoresistive effect element 101 and the second electrode 103. . The cap layer, seed layer, or buffer layer is preferably composed of Ru, Ta, Cu, Cr, or a laminated film thereof.

The current line 105 is preferably made of a highly conductive material such as Au, Cu or AuCu. This makes it possible to reduce the current flowing through the current line 105 in order to obtain a desired magnetic field. The metal magnetic body 104 is preferably made of a NiFe alloy such as NiFe or NiFeCo, or a material having low coercive force and high saturation magnetization characteristics such as an FeCo alloy.

The annular metallic magnetic body 104 functions as a receiving antenna when an electromagnetic wave is applied, and generates an alternating voltage between the first portion 108 and the second portion 109 in accordance with the law of electromagnetic induction. The AC voltage generated between the first portion 108 and the second portion 109 is a first electrical connection between the first portion 108 and the first electrode 102 and a second electrical connection between the second portion 109 and the second electrode 103. Is applied to the magnetoresistive effect element 101. At this time, the first portion 108 is more strongly electrically connected to the first electrode 102 than the second electrode 103, and the second portion 109 is more connected to the second electrode 103 than the first electrode 102. Since it is strongly electrically connected, an AC voltage generated between the first portion 108 and the second portion 109 can be applied between the first electrode and the second electrode, and the AC voltage is applied to the magnetoresistive effect element. 101 can be efficiently applied.

On the other hand, the magnetoresistive effect element 101 outputs a DC voltage by a rectifying action by the spin torque diode effect when a magnetic field generated from the annular metal magnetic body 104 and an AC voltage are applied.

The direct current output generated from the magnetoresistive effect element 101 is connected to the first electrode 102 and the second electrode 103 without flowing out to the annular metal magnetic body 104 side which is insulated in terms of direct current by capacitive coupling. It can be taken out by a detection circuit.

As described above, the magnetoresistive effect device 100 operates as a receiver.

On the other hand, as will be described below, the magnetoresistive device 100 also operates as a transmitter.

When an AC voltage is applied between the first portion 108 and the second portion 109, the annular metal magnetic body 104 functions as a transmission antenna and can transmit electromagnetic waves. On the other hand, the magnetoresistive effect element 101 oscillates when a direct current is applied from a magnetic field generated from the annular metal magnetic body 104 and a current source connected to the first electrode 102 and the second electrode 103. Generate AC voltage.

When a direct current is applied between the first electrode 102 and the second electrode 103, the direct current does not flow out to the annular metallic magnetic body 104 side that is insulated in terms of direct current by capacitive coupling. 101 is applied. The AC voltage generated from the magnetoresistive effect element 101 is generated by the first electrical connection between the first portion 108 and the first electrode 102 and the second electrical connection between the second portion 109 and the first electrode 102. It is applied to the first portion 108 and the second portion 109 of the annular metal magnetic body 104. At this time, the first portion 108 is more strongly electrically connected to the first electrode 102 than the second electrode 103, and the second portion 109 is more connected to the second electrode 103 than the first electrode 102. Since it is strongly electrically connected, an alternating voltage generated between the first electrode 102 and the second electrode 103 due to oscillation of the magnetoresistive effect element 101 is generated between the first portion 108 and the second portion 109. Can be applied. Due to the AC voltage applied between the first portion 108 and the second portion 109, the annular metal magnetic body 104 can transmit an oscillation output as an electromagnetic wave as an antenna. That is, the magnetoresistive device 100 operates as a transmitter.

Thus, since the magnetoresistive effect device 100 has the annular metal magnetic body 104, the magnetic field generated between the first end portion 106 and the second end portion 107 by the annular metal magnetic body 104. Can be applied to the magnetoresistive effect element 101. Further, the first portion 108 of the metal magnetic body 104 is more strongly electrically connected to the first electrode 102 than the second electrode 103, and the second portion 109 is the second electrode compared to the first electrode 102. Since the electrode 103 is more strongly electrically connected to the first portion 108, an AC voltage generated between the first portion 108 and the second portion 109 when the electromagnetic wave is received by the annular metal magnetic body 104 is The first electrical connection with the first electrode 102 and the second electrical connection between the second portion 109 and the second electrode 103 can be applied between the first electrode and the second electrode. The AC voltage can be efficiently applied to the magnetoresistive effect element 101. Furthermore, since at least one of the first and second electrical connections is capacitive coupling, the DC output generated from the magnetoresistive effect element 101 by applying a magnetic field and an AC voltage is DC-directed by capacitive coupling. Can be taken out from the first electrode 102 and the second electrode 103 without flowing out to the insulated annular metal magnetic body 104 side. That is, the magnetoresistive effect device 100 operates as a receiver.

In addition, since at least one of the first and second electrical connections is capacitive coupling, when a direct current is applied to the first electrode 102 and the second electrode 103, the direct current is DC-coupled by capacitive coupling. Is applied to the magnetoresistive element 101 without flowing out to the insulated annular metal magnetic body 104 side. By applying a magnetic field and a direct current, the magnetoresistive effect element 101 oscillates, and the first portion 108 is more strongly electrically connected to the first electrode 102 than the second electrode 103. Is more strongly electrically connected to the second electrode 103 than the first electrode 102, so that the magnetoresistive effect element 101 oscillates between the first electrode 102 and the second electrode 103. The generated AC voltage can be applied between the first portion 108 and the second portion 109. Due to the AC voltage applied between the first portion 108 and the second portion 109, the annular metal magnetic body 104 can transmit an oscillation output as an electromagnetic wave as an antenna. That is, the magnetoresistive device 100 operates as a transmitter.

Therefore, the magnetoresistive effect device 100 has a configuration in which both the antenna and the magnetic field application mechanism can be used in response to the problem that miniaturization is difficult because the antenna for receiving or transmitting electromagnetic waves and the magnetic field application mechanism are separately provided. Can be reduced in size.

Further, in the magnetoresistive effect device 100, the distance between the first portion 108 and the first electrode 102 is shorter than the distance between the first portion 108 and the second electrode 103, and the second portion 109 and the second electrode 103 are short. Is shorter than the distance between the second portion 109 and the first electrode 102. Therefore, the first portion 108 is more strongly electrically connected to the first electrode 102 than the second electrode 103, and the second portion 109 is more strongly connected to the second electrode 103 than the first electrode 102. Strongly connected electrically.

  Further, in the magnetoresistive effect device 100, the first electrode 102 and the second electrode 103 are arranged via the magnetoresistive effect element 101 in the film stacking direction of the magnetoresistive effect element 101, and the first end 106. Are arranged so as to overlap the surface of the first electrode 102. Therefore, a state where the distance between the first portion 108 and the first electrode 102 is shorter than the distance between the first portion 108 and the second electrode 103 is realized with a simple configuration. Furthermore, a magnetic field having a component perpendicular to the film surface can be applied to the magnetoresistive element. The annular metallic magnetic body 104 of the magnetoresistive effect device 100 is a more preferable form for a magnetoresistive effect element whose reception or transmission characteristics are improved by applying a magnetic field having a component perpendicular to the film surface.

  Further, the magnetoresistive effect device 100 is arranged so that the second end 107 overlaps the surface of the second electrode 103. Therefore, a state in which the distance between the second portion 109 and the second electrode 103 is shorter than the distance between the second portion 109 and the first electrode 102 is realized with a simple configuration. Furthermore, a magnetic field having a component perpendicular to the film surface can be applied to the magnetoresistive element. The annular metallic magnetic body 104 of the magnetoresistive effect device 100 is a more preferable form for a magnetoresistive effect element whose reception or transmission characteristics are improved by applying a magnetic field having a component perpendicular to the film surface.

Further, in the magnetoresistive effect device 100, the current line 105 is wound around the annular metal magnetic body 104, and the magnitude of the current passed through the current line 105 is changed, so that the first end 106 and the second end The magnitude of the magnetic field generated between the end portions 107 can be adjusted. For this reason, both the frequency at which the magnetoresistive effect element 101 receives the AC signal and the frequency at which the AC signal is oscillated can be changed by the magnetic field strength applied to the magnetoresistive effect element 101. This is a preferable form when it is desired to change the frequency of reception or transmission of the effect device.

In the first embodiment, the first portion 108 and the first electrode 102 and the second portion 109 and the second electrode 103 are both insulated in terms of direct current and capacitively coupled in terms of alternating current. However, a configuration with one capacitive coupling may be used. For example, the first portion 108 and the first electrode 102 may be connected in a direct current manner. Even in this case, the direct current output generated from the magnetoresistive effect element 101 does not flow out to the annular metallic magnetic body 104 side that is insulated in terms of direct current by capacitive coupling, and the first electrode 102 and the second electrode 103. Can be taken out from. Further, an alternating voltage generated between the first electrode 102 and the second electrode 103 due to the oscillation of the magnetoresistive element 101 can be applied between the first portion 106 and the second portion 107.

In the first embodiment, the first end portion 106 is disposed so as to overlap the surface of the first electrode 102, and the second end portion 107 is disposed so as to overlap the surface of the second electrode 103. However, the positional relationship of the arrangement is not limited to this. The first portion 108 is more strongly electrically connected to the first electrode 102 by the first electrical connection than the second electrode 103, and the second portion 109 is compared to the first electrode 102. What is necessary is just to be electrically connected with the 2nd electrode 103 more strongly by 2nd electrical connection. For example, even if the first end 106 does not overlap the surface of the first electrode 102, the distance between the first portion 108 and the first electrode 102 is equal to the distance between the first portion 108 and the second electrode 103. A short configuration may be used.

In the first embodiment, the current line 105 is wound around the annular metal magnetic body 104. However, the current line 105 may be omitted. For example, a configuration may be used in which a permanent magnet is used as the annular metal magnetic body 104 and a magnetic field is applied to the magnetoresistive effect element 101 using only the annular metal magnetic body 104.

(Embodiment 2)
A magnetoresistive effect device 200 according to Embodiment 2 of the present invention is shown in FIG. The magnetoresistive effect device 200 includes an element portion P, an annular metal magnetic body 204, and a current line 105.

FIG. 5 is a cross-sectional view taken along the line B-C in which the portion A including the element portion P of the magnetoresistive effect device 200 in FIG. 4 is enlarged. The element portion P includes a magnetoresistive effect element 101, and a first electrode 102 and a second electrode 103 for applying a current or voltage to the magnetoresistive effect element 101. The annular metal magnetic body 204 has a first end portion 206 and a second end portion 207, and a first portion 208 on the first end portion 206 side and a second portion on the second end portion 207 side. 209. The element portion P is located between the first end portion 206 and the second end portion 207.

The magnetoresistive effect device 200 is the same as the magnetoresistive effect device 100 of the first embodiment except for the portion A. Differences from the magnetoresistive effect device 100 of the first embodiment will be described below.

  The magnetoresistive effect device 200 further includes a first metal protruding portion 501 and a second metal protruding portion 502 with respect to the magnetoresistive effect device 100 of the first embodiment.

  The first metal protrusion 501 is electrically connected to the first portion 208 and the first electrode 102, and the distance between the first metal protrusion 501 and the first electrode 102 is the same as the distance between the first portion 208 and the first electrode. The distance between the first metal protrusion 501 and the second electrode 103 is shorter than the distance between the first metal protrusion 501 and the second electrode 103. In the magnetoresistive effect device 200, the first metal protrusion 501 is connected to the first portion 208 in a direct current manner.

  The second metal protrusion 502 is electrically connected to the second portion 209 and the second electrode 103, and the distance between the second metal protrusion 502 and the second electrode 103 is the second portion 209 and the second electrode 103. The distance between the second metal projection 502 and the first electrode 102 is shorter than the distance between the second electrode 103 and the first electrode 102. In the magnetoresistive effect device 200, the second metal protrusion 502 is connected to the second portion 209 in a direct current manner.

The first portion 208 is more strongly electrically connected to the first electrode 102 through the first metal protrusion 501 than the second electrode 103 by the first electrical connection. Further, the second portion 209 is more strongly electrically connected to the second electrode 103 through the second metal protrusion 502 than the first electrode 102 by the second electrical connection as compared with the first electrode 102.

The first metal protrusion 501 and the first electrode 102 are insulated in terms of direct current and capacitively coupled in terms of alternating current. Similarly, the second metal protrusion 502 and the second electrode 103 are arranged so as to be insulated in terms of direct current and capacitively coupled in terms of alternating current. Specifically, aluminum oxide (Al ₂ O ₃ ) or silicon oxide (SiO ₂ ) that is an insulator exists between the first metal protrusion 501 and the first electrode 102, and the second metal protrusion Aluminum oxide (Al ₂ O ₃ ) or silicon oxide (SiO ₂ ) that is an insulator exists between the portion 502 and the second electrode 103.

The first metal protrusion 501 and the second metal protrusion 502 are each made of a nonmagnetic metal such as Cu, Ag, Au, or Ru.

The first end portion 206 and the second end portion 207 are arranged with the magnetoresistive effect element 101 interposed therebetween in the film surface direction of the magnetoresistive effect element 101. Thereby, a magnetic field in the film surface direction between the first end portion 206 and the second end portion 207 is applied to the magnetoresistive effect element 101.

The magnetoresistance effect device 200 includes a first metal projection 501 electrically connected to the first portion 208 and the first electrode 102, and a distance between the first metal projection 501 and the first electrode 102. Is shorter than the distance between the first portion 208 and the first electrode 102, and shorter than the distance between the first metal protrusion 501 and the second electrode 103, so that the first metal protrusion 501 The first portion 208 can be more strongly electrically connected to the first electrode 102 than the second electrode 103.

Further, since the first portion 208 is electrically connected to the first electrode 102 via the first metal protrusion 501 by the first electrical connection, regardless of the position of the first end portion 206, A first electrical connection can be made. That is, the degree of freedom of the position of the first end 206 that functions as the magnetic pole of the magnetic field applied to the magnetoresistive effect element 101 can be increased, and an effective magnetic field can be applied to the magnetoresistive effect element 101. it can.

Further, the magnetoresistive effect device 200 has a second metal protrusion 502 electrically connected to the second portion 209 and the second electrode 103, and the second metal protrusion 502 and the second electrode 103 are connected. Is shorter than the distance between the second portion 209 and the second electrode 103 and shorter than the distance between the second metal protrusion 502 and the first electrode 102, so that the second metal The protrusion 502 allows the second portion 209 to be more strongly electrically connected to the second electrode 103 than the first electrode 102.

Further, since the second portion 209 is electrically connected to the second electrode 103 through the second metal protrusion 502 by the second electrical connection, the second portion 209 is independent of the position of the second end 207. A second electrical connection can be made. That is, the degree of freedom of the position of the second end 207 that functions as the magnetic pole of the magnetic field applied to the magnetoresistive effect element 101 can be increased, and an effective magnetic field can be applied to the magnetoresistive effect element 101. it can.

In the second embodiment, the first electrical connection between the first portion 208 and the first electrode 102 is made via the first metal projection 501, and the second portion 209 is made via the second metal projection 502. Since the second electrical connection between the first end 206 and the second electrode 103 is performed, the magnetic field in the film surface direction of the magnetoresistive effect element 101 is applied to the magnetoresistive effect element 101. A second end 207 can be arranged.

In the second embodiment, the first end portion 206 and the second end portion 207 are arranged so that the magnetic field in the film surface direction of the magnetoresistive effect element 101 is applied to the magnetoresistive effect element 101. However, the position of the first end portion 206 or the second end portion 207 is set so that an effective magnetic field is applied to the magnetoresistive effect element 101 according to the characteristics of the magnetoresistive effect element 101. It may be in a different position.

Further, in the magnetoresistive effect device 200, since the first metal protrusion 501 is a nonmagnetic metal, the magnetic field from the metal magnetic body 104 is not affected by the first metal protrusion 501 and the magnetoresistive effect element 101 is affected. To be applied.

Further, in the magnetoresistive effect device 200, since the second metal protrusion 502 is a nonmagnetic metal, the magnetic field from the metal magnetic body 104 is not affected by the second metal protrusion 502, and the magnetoresistive effect element 101 is affected. To be applied.

In the second embodiment, the first metal protrusion 501 and the first electrode 102 and the second metal protrusion 502 and the second electrode 103 are both insulated from each other in terms of DC, and AC Although it is designed to be capacitively coupled, a configuration with one capacitive coupling may be used. For example, the first metal protrusion 501 and the first electrode 102 may be connected in a direct current manner. Even in this case, the direct current output generated from the magnetoresistive effect element 101 does not flow out to the annular metallic magnetic body 104 side that is insulated in terms of direct current by capacitive coupling, and the first electrode 102 and the second electrode 103. And can be taken out from. Further, an AC voltage generated between the first electrode 102 and the second electrode 103 due to the oscillation of the magnetoresistive effect element 101 can be applied between the first portion 206 and the second portion 207.

In the second embodiment, the first metal projection 501 is connected to the first portion 208 in a direct current manner. However, the first metal projection 501 and the first portion 208 are insulated in a direct current, so that an alternating current is used. May be capacitively coupled. In addition, the first metal projection 501 and the first portion 208 are galvanically isolated and capacitively coupled in an alternating manner, and the first metal projection 501 and the first electrode 102 are galvanically connected. It may be. Similarly, in the second embodiment, the second metal projection 502 is connected to the second portion 209 in a direct current manner, but the second metal projection 502 and the second portion 209 are insulated in a direct current manner. Alternatively, it may be capacitively coupled in an alternating manner. Also, the second metal projection 502 and the second portion 209 are galvanically isolated and capacitively coupled in an alternating manner, and the second metal projection 502 and the second electrode 103 are connected in dc. May be.

In the second embodiment, the two metal projections of the first metal projection 501 and the second metal projection 502 are used. However, for example, a configuration in which the metal projection 502 does not exist may be used. In that case, for example, the second end portion 207 is disposed so as to overlap the surface of the second electrode 103, and the second portion 209 is more strongly electrically connected to the second electrode 103 than the first electrode 102. It is only necessary to connect them.

In the second embodiment, the first metal protrusion 501 and the second metal protrusion 502 are nonmagnetic metals, but the first metal protrusion 501 and the second metal protrusion 502 are made of magnetic metal. You can also In this case, for example, an alloy of Fe and Co, an alloy of Fe, Co, and Al or an alloy of Fe, Co, Al, and Si can be used as the magnetic metal. Even in this case, the first metal projection 501 allows the first portion 208 to be more strongly electrically connected to the first electrode 102 than the second electrode 103. Similarly, the second metal protrusion 502 allows the second portion 209 to be more strongly electrically connected to the second electrode 103 than the first electrode 102.

(Embodiment 3)
FIG. 6 shows a magnetoresistive effect device 300 according to Embodiment 3 of the present invention. The magnetoresistive effect device 300 includes an element portion P, an annular metal magnetic body 304, and a current line 105.

FIG. 7 is a cross-sectional view taken along line B-C in which the portion A including the element portion P of the magnetoresistive effect device 300 in FIG. 6 is enlarged. The element portion P includes a magnetoresistive effect element 101, and a first electrode 102 and a second electrode 103 for applying a current or voltage to the magnetoresistive effect element 101. The annular metallic magnetic body 304 has a first end 306 and a second end 307, and a first portion 308 on the first end 306 side and a second portion on the second end 307 side. 309. The element portion P is located between the first end 306 and the second end 307.

The magnetoresistive effect device 300 is the same as the magnetoresistive effect device 100 of the first embodiment except for the portion A. Differences from the magnetoresistive effect device 100 of the first embodiment will be described below.

  The magnetoresistance effect device 300 further includes a first magnetic flux guide metal magnetic body 701, a second magnetic flux guide metal magnetic body 702, and a third metal projection 801 compared to the magnetoresistance effect device 100 of the first embodiment. And a fourth metal protrusion 802.

The first magnetic flux guide metal magnetic body 701 is electrically connected to the first portion 308 and the first electrode 102. One end portion of the first magnetic flux guide metal magnetic body 701 is disposed closer to the magnetoresistive effect element 101 than the first end portion 306, and the magnetoresistive effect element 101 is the first magnetic flux guide metal. A magnetic field between the first end 306 and the second end 307 is applied via the magnetic body 701.

The third metal projection 801 is electrically connected to the first magnetic flux guide metal magnetic body 701 and the first electrode 102, and the distance between the first electrode 102 and the third metal projection 801 is the first The distance is shorter than the distance between one electrode 102 and the first magnetic flux guide metal magnetic body 701 and shorter than the distance between the second electrode 103 and the third metal protrusion 801. In the magnetoresistive effect device 300, the third metal protrusion 801 is connected to the first magnetic flux guide metal magnetic body 701 and the first electrode 102 in a direct current manner.

Second magnetic flux guide metal magnetic body 702 is electrically connected to second portion 309 and second electrode 103. One end portion of the second magnetic flux guide metal magnetic body 702 is disposed at a position closer to the magnetoresistive effect element 101 than the second end portion 307, and the magnetoresistive effect element 101 is a second magnetic flux guide metal. A magnetic field between the first end 306 and the second end 307 is applied via the magnetic body 702.

The fourth metal protrusion 802 is electrically connected to the second magnetic flux guide metal magnetic body 702 and the second electrode 103, and the distance between the second electrode 103 and the fourth metal protrusion 802 is It is shorter than the distance between the second electrode 103 and the second magnetic flux guide metal magnetic body 702 and shorter than the distance between the first electrode 102 and the fourth metal protrusion 802. In the magnetoresistive effect device 300, the fourth metal protrusion 802 is connected to the second magnetic flux guide metal magnetic body 702 and the second electrode 103 in a direct current manner.

The first portion 308 is more strongly connected to the first electrode 102 by the first electrical connection than the second electrode 103 via the first magnetic flux guide metal magnetic body 701 and the third metal protrusion 801. Electrically connected. In addition, the second portion 309 is stronger than the first electrode 102 through the second magnetic flux guide metal magnetic body 702 and the fourth metal projection 802 and is stronger than the second electrode 103. Are electrically connected by electrical connection.

The first magnetic flux guide metal magnetic body 701 and the first portion 308 are insulated in terms of direct current and capacitively coupled in terms of alternating current. Similarly, the second magnetic flux guide metal magnetic body 702 and the second portion 309 are arranged so as to be insulated in terms of direct current and capacitively coupled in terms of alternating current. Specifically, aluminum oxide (Al ₂ O ₃ ) or silicon oxide (SiO ₂ ) as an insulator exists between the first magnetic flux guide metal magnetic body 701 and the first portion 308, and the second magnetic flux Aluminum oxide (Al ₂ O ₃ ) or silicon oxide (SiO ₂ ), which is an insulator, exists between the guide metal magnetic body 702 and the second portion 309.

For the first magnetic flux guide metal magnetic body 701 and the second magnetic flux guide metal magnetic body 702, an alloy of Fe and Co, an alloy of Fe, Co, and Al or an alloy of Fe, Co, Al, and Si is used. be able to.

The third metal projection 801 and the fourth metal projection 802 are nonmagnetic metals such as Cu, Ag, Au, or Ru, respectively.

The first end 306 and the second end 307 are arranged in the film surface direction of the magnetoresistive effect element 101 with a part of the magnetoresistive effect element 101 and the second electrode 103 interposed therebetween. One end of the first magnetic flux guide metal magnetic body 701 and one end of the second magnetic flux guide metal magnetic body 702 sandwich the magnetoresistive effect element 101 in the film surface direction of the magnetoresistive effect element 101. Is arranged in. As a result, the magnetic field between the first end 306 and the second end 307 causes the magnetoresistive effect element to pass through the first magnetic flux guide metal magnetic body 701 and the second magnetic flux guide metal magnetic body 702. 101 is applied in the film surface direction.

The magnetoresistance effect device 300 includes a first magnetic flux guide metal magnetic body 701 electrically connected to the first portion 308 and the first electrode 102, and one of the first magnetic flux guide metal magnetic bodies 701 is provided. The end portion is disposed at a position closer to the magnetoresistive effect element 101 than the first end portion 306, and the magnetoresistive effect element 101 is connected to the first end portion 306 via the first magnetic flux guide metal magnetic body 701. Since the magnetic field between the second ends 307 is applied, a stronger magnetic field can be applied to the magnetoresistive element 101. Furthermore, the magnetoresistive effect device 300 includes a second magnetic flux guide metal magnetic body 702 electrically connected to the second portion 309 and the second electrode 103, and the second magnetic flux guide metal magnetic body 702. One end portion of the magnetic resistance effect element 101 is disposed closer to the magnetoresistive effect element 101 than the second end portion 307, and the magnetoresistive effect element 101 is connected to the first end via the second magnetic flux guide metal magnetic body 702. Since the magnetic field between the part 306 and the second end 307 is applied, a stronger magnetic field can be applied to the magnetoresistive element 101. The magnetoresistive effect device 300 is a more preferable form for a magnetoresistive effect element whose reception or transmission characteristics are improved by applying a strong magnetic field.

Furthermore, the magnetoresistive effect device 300 includes a first magnetic flux guide metal magnetic body 701 and a third metal protrusion 801 electrically connected to the first electrode 102. The distance between the third metal projection 801 is shorter than the distance between the first electrode 102 and the first magnetic flux guide metal magnetic body 701, and the distance between the second electrode 103 and the third metal projection 801. The first portion 308 is compared with the second electrode 103 by the electrical connection between the first magnetic flux guide metal magnetic body 701 and the first electrode 102 by the third metal protrusion 801. Thus, the first electrode 102 can be more strongly electrically connected. Further, since the first portion 308 is electrically connected to the first electrode 102 through the third metal protrusion 801 by the first electrical connection, the position of the first magnetic flux guide metal magnetic body 701 is determined. Regardless, the first electrical connection can be made. In other words, the third metal protrusion 801 can increase the degree of freedom of arrangement of the first magnetic flux guide metal magnetic body 701, and an effective magnetic field can be applied to the magnetoresistive element 101.

Further, the magnetoresistive effect device 300 includes a second metal protrusion 802 electrically connected to the second magnetic flux guide metal magnetic body 702 and the second electrode 103, and The distance between the fourth metal protrusion 802 is shorter than the distance between the second electrode 103 and the second magnetic flux guide metal magnetic body 702, and the distance between the first electrode 102 and the fourth metal protrusion 802. The second portion 309 is connected to the first electrode 102 by the electrical connection between the second magnetic flux guide metal magnetic body 702 and the second electrode 103 by the fourth metal protrusion 802. In comparison, the second electrode 103 can be more strongly electrically connected. Further, since the second portion 309 is electrically connected to the second electrode 103 via the fourth metal projection 802 by the second electrical connection, the second magnetic flux guide metal magnetic body 702 is provided. The second electrical connection can be made regardless of the position. In other words, the fourth metal protrusion 802 can increase the degree of freedom of arrangement of the second magnetic flux guide metal magnetic body 702, and an effective magnetic field can be applied to the magnetoresistive element 101.

In the third embodiment, the first electrical connection between the first portion 308 and the first electrode 102 is made via the third metal projection 801, and the second portion 309 is made via the fourth metal projection 802. Since the second electrical connection between the first electrode 103 and the second electrode 103 is performed, the first magnetic flux guide metal magnetism is applied so that the magnetic field in the film surface direction of the magnetoresistive effect element 101 is applied to the magnetoresistive effect element 101. The body 701 and the second magnetic flux guide metal magnetic body 702 can be disposed.

In the third embodiment, the first magnetic flux guide metal magnetic body 701 and the second magnetic flux guide metal magnetic body 702 are applied so that the magnetic field in the film surface direction of the magnetoresistive effect element 101 is applied to the magnetoresistive effect element 101. However, according to the characteristics of the magnetoresistive effect element 101, the first magnetic flux guide metal magnetic body 701 or the second magnetic material 701 is applied so that an effective magnetic field is applied to the magnetoresistive effect element 101. The position of the magnetic flux guide metal magnetic body 702 may be different from that of the third embodiment.

Further, in the magnetoresistive effect device 300, since the third metal projection 801 is a nonmagnetic metal, the magnetic field from the first magnetic flux guide metal magnetic body 701 is not affected by the third metal projection 801. Is applied to the magnetoresistive element 101.

Further, in the magnetoresistive effect device 300, since the fourth metal protrusion 802 is a nonmagnetic metal, the magnetic field from the second magnetic flux guide metal magnetic body 702 is not affected by the fourth metal protrusion 802. Is applied to the magnetoresistive element 101.

In the third embodiment, the first portion 308 and the first magnetic flux guide metal magnetic body 701 and the second portion 309 and the second magnetic flux guide metal magnetic body 702 are both insulated in terms of direct current. In addition, although capacitively coupled in an alternating manner, a configuration with a single capacitive coupling may be used. For example, the first portion 308 and the first magnetic flux guide metal magnetic body 701 may be connected in a direct current manner. That is, the connection between the first portion 308 and the first magnetic flux guide metal magnetic body 701, the connection between the first magnetic flux guide metal magnetic body 701 and the third metal projection 801, and the third metal projection. 801 and the first electrode 102, the second portion 309 and the second magnetic flux guide metal magnetic body 702, the second magnetic flux guide metal magnetic body 702 and the fourth metal protrusion 802. And at least one of the connections between the fourth metal protrusion 802 and the second electrode 103 is galvanically isolated and AC capacitively coupled, and all other connections are dc May be connected to each other. Even in this case, the direct current output generated from the magnetoresistive effect element 101 does not flow out to the annular metallic magnetic body 104 side that is insulated in terms of direct current by capacitive coupling, and the first electrode 102 and the second electrode 103. And can be taken out from. In addition, an AC voltage generated between the first electrode 102 and the second electrode 103 due to the oscillation of the magnetoresistive element 101 can be applied between the first portion 306 and the second portion 307.

In the third embodiment, the third metal protrusion 801 is connected to the first magnetic flux guide metal magnetic body 701 and the first electrode 102 in a direct current manner. The first magnetic flux guide metal magnetic body 701 and the first electrode 102 may be DC-insulated and capacitively coupled in an AC manner. The third metal protrusion 801 and at least one of the first magnetic flux guide metal magnetic body 701 and the first electrode 102 are galvanically insulated and capacitively coupled with each other, and the first magnetic flux The guide metal magnetic body 701 and the first portion 308 may be connected in a direct current manner. Similarly, in the third embodiment, the fourth metal protrusion 802 is connected to the second magnetic flux guide metal magnetic body 702 and the second electrode 103 in a direct current manner. And at least one of the second magnetic flux guide metal magnetic body 702 and the second electrode 103 may be DC-insulated and capacitively coupled AC. The fourth metal protrusion 802 and at least one of the second magnetic flux guide metal magnetic body 702 and the second electrode 103 are galvanically isolated and capacitively coupled, and the second magnetic flux The guide metal magnetic body 702 and the second portion 309 may be connected in a direct current manner.

In the third embodiment, the first magnetic flux guide metal magnetic body 701 and the second magnetic flux guide metal magnetic body 702 are used, and the third metal protrusion 801 and the fourth metal protrusion 802 are used. For example, the second magnetic flux guide metal magnetic body 702 and the fourth metal protrusion 802 may be omitted. In that case, for example, the second end 307 is disposed so as to overlap the surface of the second electrode 103, and the second portion 309 is more strongly electrically connected to the second electrode 103 than the first electrode 102. It is only necessary to connect them.

In the third embodiment, the third metal protrusion 801 and the fourth metal protrusion 802 are nonmagnetic metals, but the third metal protrusion 801 and the fourth metal protrusion 802 are made of magnetic metal. You can also In this case, for example, an alloy of Fe and Co, an alloy of Fe, Co, and Al or an alloy of Fe, Co, Al, and Si can be used as the magnetic metal. Even in this case, the first metal portion 801 can make the first portion 308 stronger and more electrically connected to the first electrode 102 than the second electrode 103. Similarly, the second metal protrusion 802 can make the second portion 309 stronger and more electrically connected to the second electrode 103 than the first electrode 102.

  The preferred embodiments of the present invention have been described above. However, the present invention is not limited to these embodiments, and is included in the scope of the present invention as long as the form has the technical idea of the present invention. Each configuration in each embodiment, a combination thereof, and the like are examples, and the addition, omission, replacement, and other changes of the configuration can be made without departing from the spirit of the present invention. Further, the present invention is not limited by the embodiments, and is limited only by the scope of the claims.

  As described above, the magnetoresistive effect device according to the present invention can be used for a receiver, a transmitter, and the like.

DESCRIPTION OF SYMBOLS 100, 200, 300 ... Magnetoresistive device, 101 ... Magnetoresistive element, 102, 103 ... Electrode, 104, 204, 304 ... Metal magnetic body, 105 ... Current wire, 106, 206, 306 ... First end 107, 207, 307 ... second end, 108, 208, 308 ... first part, 109, 209, 309 ... second part, 501, 502, 801, 802 ... metal projection, 701, 702 ... magnetic flux guide Metal magnetic material, P ... element part

Claims (11)

Magnetoresistive element, first and second electrodes for applying current or voltage to magnetoresistive element, and annular metal magnetic body capable of applying magnetic field to magnetoresistive element Have
The metal magnetic body has a first end and a second end,
The magnetoresistive element is applied with a magnetic field between the first and second ends,
The first portion of the metal magnetic body on the first end side is more strongly electrically connected to the first electrode than the second electrode by a first electrical connection,
The second part of the metal magnetic body on the second end side is more strongly electrically connected to the second electrode than the first electrode by a second electrical connection,
Ri least one capacitive coupling der of said first and second electrical connections,
A first metal protrusion electrically connected to the first portion and the first electrode;
The distance between the first metal protrusion and the first electrode is shorter than the distance between the first portion and the first electrode, and the distance between the first metal protrusion and the second electrode. Magnetoresistive device characterized in that it is shorter . A second metal protrusion electrically connected to the second portion and the second electrode;
The distance between the second metal projection and the second electrode is shorter than the distance between the second portion and the second electrode, and the distance between the second metal projection and the first electrode The magnetoresistive effect device according to claim 1 , wherein the magnetoresistive effect device is shorter than the distance. The magnetoresistive effect device according to claim 1 , wherein the first metal protrusion is a nonmagnetic metal. The magnetoresistive device according to claim 2 , wherein the second metal protrusion is a nonmagnetic metal.   Magnetoresistive element, first and second electrodes for applying current or voltage to magnetoresistive element, and annular metal magnetic body capable of applying magnetic field to magnetoresistive element Have
The metal magnetic body has a first end and a second end,
The magnetoresistive element is applied with a magnetic field between the first and second ends,
The first portion of the metal magnetic body on the first end side is more strongly electrically connected to the first electrode than the second electrode by a first electrical connection,
The second part of the metal magnetic body on the second end side is more strongly electrically connected to the second electrode than the first electrode by a second electrical connection,
At least one of the first and second electrical connections is capacitively coupled;
  A first magnetic guide for magnetic flux guide electrically connected to the first portion and the first electrode;
One end portion of the first magnetic guide for magnetic flux guide is disposed at a position closer to the magnetoresistive element than the first end portion,
The magnetoresistive effect device is characterized in that the magnetic field is applied to the magnetoresistive effect element via the first magnetic material for magnetic flux guide. A third magnetic projection electrically connected to the first magnetic flux guide metal magnetic body and the first electrode;
A distance between the first electrode and the third metal protrusion is shorter than a distance between the first electrode and the first magnetic flux guide metal magnetic body, and the second electrode and the third metal protrusion The magnetoresistive effect device according to claim 5 , wherein the magnetoresistive effect device is shorter than a distance from the metal protrusion. A second magnetic flux guide metal magnetic body electrically connected to the second portion and the second electrode;
One end of the second magnetic flux guide metal magnetic body is disposed at a position closer to the magnetoresistive effect element than the second end,
The magnetoresistive effect device according to claim 5 or 6 , wherein the magnetoresistive effect element is applied with the magnetic field via the second magnetic flux guide metal magnetic material. A fourth magnetic projection electrically connected to the second magnetic flux guide metal magnetic body and the second electrode;
The distance between the second electrode and the fourth metal protrusion is shorter than the distance between the second electrode and the second magnetic flux guide metal magnetic body. The magnetoresistive effect device according to claim 7 , wherein the magnetoresistive effect device is shorter than a distance from the metal protrusion. The magnetoresistive effect device according to claim 6 , wherein the third metal protrusion is a nonmagnetic metal. 9. The magnetoresistive effect device according to claim 8 , wherein the fourth metal protrusion is a nonmagnetic metal. Wherein optionally be metallic magnetic current line winding, in any one of claims 1 to 10, characterized in that to adjust the intensity of the magnetic field by changing the intensity of current supplied to the current line The magnetoresistive device described.

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