JP7087587B2 - Magnetoresistive device - Google Patents

Description

The present invention relates to a magnetoresistive effect device using a magnetoresistive effect element.

In recent years, along with the sophistication of mobile communication terminals such as mobile phones, the speed of wireless communication has been increasing. Since the communication speed is proportional to the bandwidth of the frequency used, the frequency band required for communication is increasing, and the number of high-frequency filters required for the mobile communication terminal is also increasing accordingly. In addition, research in the field of spintronics, which is expected to be applied to new high-frequency components, is being actively conducted. One of the phenomena attracting attention among them is the spin torque resonance phenomenon due to the magnetoresistive element (see Non-Patent Document 1).

For example, by applying a static magnetic field using a magnetic field application mechanism at the same time as passing an alternating current through a magnetic resistance effect element, ferromagnetic resonance can be caused in the magnetization of the magnetization free layer contained in the magnetic resistance effect element. , The resistance value of the magnetic resistance effect element vibrates periodically at the frequency corresponding to the ferromagnetic resonance frequency. Further, the resistance value of the magnetoresistive sensor also vibrates when a high frequency magnetic field is applied to the magnetization free layer of the magnetoresistive sensor. The ferromagnetic resonance frequency changes depending on the strength of the static magnetic field applied to the magnetoresistive sensor, and the resonance frequency is generally included in the high frequency band of several to several tens of GHz.

Patent Document 1 discloses a technique of changing the ferromagnetic resonance frequency by changing the strength of the magnetic field applied to the magnetoresistive effect element, and a device such as a high frequency filter using this technique has been proposed. There is.

Japanese Unexamined Patent Publication No. 2017-63397

Nature, Vol. 438, No. 7066, pp. 339-342, 17 November 2005

In Patent Document 1, an electromagnet type and a stripline type are mentioned as examples of a magnetic field application mechanism for applying a magnetic field to a magnetoresistive effect element, but the detailed configuration thereof is not disclosed. As a method of applying a magnetic field to the magnetoresistive effect element, a method of applying a magnetic field generated from a magnetic member such as a yoke to the magnetoresistive effect element is generally considered.

Here, in order to apply a current or voltage to the magnetoresistive sensor, or to transmit a signal output from the magnetoresistive sensor, lines (magnetic resistance for the purpose of increasing conductivity, etc.) are placed at the upper and lower ends of the element. Electrodes may be provided at the upper and lower ends of the effect element, respectively, but in the following, the line including these electrodes is referred to as "electrode wiring").
FIG. 1 is a cross-sectional view schematically showing a configuration in the vicinity of a magnetoresistive effect element.
The yoke (magnetic member) 102 shown in FIG. 1A has a configuration in which a protrusion 102B is provided on the magnetoresistive element 101 side of the base 102A. Reference numeral 106 is a coil, and the magnetoresistive element 101 includes a first ferromagnetic layer 101A, a second ferromagnetic layer 101B, and a spacer layer 101C. The electrode wiring 107 and the electrode wiring 108 are connected to the upper end and the lower end of the magnetoresistive effect element 101, and a current or a voltage is applied to the magnetoresistive effect element 101 via at least one of the electrode wiring 107 and the electrode wiring 108. Further, at least one of the electrode wiring 107 and the electrode wiring 108 transmits a signal output from the magnetoresistive effect element 101.

Here, in order to increase the magnetic field applied to the magnetoresistive effect element 101, as shown in FIG. 1 (b), the magnetic member 102 (this) is formed by forming the electrode wiring 107 on the side close to the magnetic member 102 thinly. In the configuration shown in the figure, it is preferable to reduce the distance d between the protruding portion 102B) and the magnetoresistive effect element 101 (in the configuration shown in this figure, the first ferromagnetic layer 101A). However, since the electrical resistance (hereinafter, may be simply referred to as “resistance”) is inversely proportional to the cross-sectional area, if the electrode wiring 107 is made thin, the resistance of the electrode wiring 107 increases and the high frequency characteristics deteriorate.

The present invention has been made in view of the above circumstances, and an object of the present invention is to provide a magnetoresistive effect device that achieves both application of a large magnetic field to a magnetoresistive element and reduction of resistance of electrode wiring.

The present invention provides the following means for solving the above problems.

(1) The magnetic resistance effect device according to one aspect of the present invention includes a magnetic resistance effect element laminated so that a spacer layer is arranged between the first ferromagnetic layer and the second ferromagnetic layer. The first magnetic member arranged on the first ferromagnetic layer side of the magnetic resistance effect element and applying a magnetic field to the magnetic resistance effect element is connected to the first ferromagnetic layer side of the magnetic resistance effect element. The first magnetic member includes a first electrode wiring, and the surface of the first magnetic member on the magnetic resistance effect element side in the stacking direction includes a surface of the first ferromagnetic layer on the first magnetic member side. The first electrode wiring is formed so that the distance from the plane fluctuates, and the first electrode wiring is the magnetic resistance effect element of the first magnetic member within a range where the first magnetic member overlaps with the first magnetic member when viewed in a plan view from the stacking direction. The portion thicker than the portion in the first closest range where the distance between the side surface and the first virtual plane is closest is provided outside the first closest range.
Here, the "first electrode wiring connected to the first ferromagnetic layer side" is both a case where it is directly connected to the first ferromagnetic layer and a case where it is indirectly connected via another layer. include.

(2) In the magnetoresistive effect device according to (1) above, the first magnetic member has a projecting portion that projects stepwise toward the magnetoresistive effect element in the stacking direction, and the projecting portion is said to be the same. At least a part of the surface on the magnetoresistive element side may be closest to the first virtual plane.

(3) In the magnetoresistive device according to any one of (1) or (2) above, the first electrode wiring may be connected so that the thicknesses gradually approach each other in portions having different thicknesses.

(4) In the magnetic resistance effect device according to any one of (1) to (3) above, in a region that does not overlap with the first magnetic member in a plan view from the stacking direction, with the first electrode wiring. A first pad portion having a thickness thicker than that of the first electrode wiring may be provided so as to be electrically connected and electrically connected to the outside.

(5) In the magnetic resistance effect device according to any one of (1) to (4) above, the magnetic resistance effect device is arranged on the second ferromagnetic layer side of the magnetic resistance effect element, and a magnetic field is applied to the magnetic resistance effect element. A second magnetic member to be applied and a second electrode wiring connected to the second ferromagnetic layer side of the magnetic resistance effect element are provided, and the second magnetic member is on the magnetic resistance effect element side in the stacking direction. The surface is formed so that the distance from the second virtual plane including the surface of the second ferromagnetic layer on the second magnetic member side varies, and the second electrode wiring is from the stacking direction. In the range where the second magnetic member overlaps with the second magnetic member in a plan view, in the second closest range where the distance between the surface of the second magnetic member on the magnetic resistance effect element side and the second virtual plane is closest. A portion thicker than the portion may be provided outside the second closest range.
Here, the "second electrode wiring connected to the second ferromagnetic layer side" means both the case of being directly connected to the second ferromagnetic layer and the case of being indirectly connected via another layer. include.

(6) In the magnetic resistance effect device according to (5) above, in a region that does not overlap with the second magnetic member in a plan view from the stacking direction, the device is electrically connected to the second electrode wiring and is externally connected. A second pad portion having a thickness thicker than that of the second electrode wiring may be provided so as to be electrically connected to the second electrode wiring.

In the magnetoresistive device of the present invention, it is possible to both apply a large magnetic field to the magnetoresistive element and reduce the resistance of the electrode wiring.

It is sectional drawing which shows typically the structure in the vicinity of a magnetoresistive effect element, (a) is the case where the electrode wiring is thick, and (b) is the case where the electrode wiring is thin. It is sectional drawing which shows typically the structural example of the magnetoresistive effect device 100 which concerns on 1st Embodiment of this invention. It is a schematic cross-sectional view which enlarged the vicinity of the magnetoresistive effect element of the magnetoresistive effect device 100 shown in FIG. (A) is a schematic cross-sectional view in which only the first magnetic member 102 is extracted in the schematic cross-sectional view of the magnetoresistive device 100 shown in FIG. 3, and (b) shows a modification of the shape of the magnetic member. It is a cross-sectional schematic diagram. It is sectional drawing for explaining the magnetoresistive effect device 100 which concerns on 1st Embodiment of this invention in more detail. FIG. 2 is a schematic cross-sectional view schematically showing a modified example of the magnetoresistive device 100 according to the first embodiment of the invention shown in FIG. It is sectional drawing which shows typically the other structural example of the magnetoresistive effect device 100 which concerns on 1st Embodiment of this invention. It is sectional drawing which shows typically the structural example of the magnetoresistive effect device 200 which concerns on 2nd Embodiment of this invention. It is sectional drawing which shows typically the structural example of the magnetoresistive effect device 300 which concerns on 3rd Embodiment of this invention. It is sectional drawing which shows typically the structural example of the magnetoresistive effect device 400 which concerns on 4th Embodiment of this invention. It is a figure which shows the structural example of the circuit of the high frequency device which applied the magnetoresistive effect device of this invention. It is a figure which shows the other structural example of the circuit of the high frequency device which applied the magnetoresistive effect device of this invention. It is a figure which shows the other structural example of the circuit of the high frequency device which applied the magnetoresistive effect device of this invention. It is a figure which shows the other structural example of the circuit of the high frequency device which applied the magnetoresistive effect device of this invention. It is a figure which shows the other structural example of the circuit of the high frequency device which applied the magnetoresistive effect device of this invention.

Hereinafter, the present invention will be described in detail with reference to the drawings as appropriate. The drawings used in the following description may be enlarged for convenience in order to make the features of the present invention easy to understand, and the dimensional ratios of each component may differ from the actual ones. be. The materials, dimensions, and the like exemplified in the following description are examples, and the present invention is not limited thereto, and can be appropriately modified and carried out within the range in which the effects of the present invention are exhibited.

"First embodiment"
FIG. 2 is a schematic cross-sectional view schematically showing a configuration example of the magnetoresistive effect device according to the first embodiment, and also shows an enlarged view of a main part. FIG. 3 is an enlarged cross-sectional schematic view of the vicinity of the magnetoresistive element of the magnetoresistive device shown in FIG.
The magnetoresistive effect device 100 shown in FIG. 2 includes at least a magnetoresistive effect element 101 (MR element), a magnetic field application mechanism 20, a first electrode wiring 7, and a second electrode wiring 8. The electrode wirings 7 and 8 are shown only in the enlarged view of the main part.
The magnetoresistive device 100 is configured such that a magnetic field (static magnetic field) generated from the magnetic field application mechanism 20 is applied to the magnetoresistive element 101.
A high-frequency signal line through which a high-frequency current flows may be further provided, and a magnetic field (high-frequency magnetic field) generated from this high-frequency signal line may also be configured to be applied to the magnetic resistance effect element 101.
Hereinafter, in the description of the figure, the stacking direction of the magnetic resistance effect element 101 is the z direction, and any of the in-plane directions of the plane perpendicular to the z direction is the direction orthogonal to the x direction, the x direction, and the z direction. The y direction.

<Magnetic resistance effect element>
The magnetoresistive element 101 is laminated so that a spacer layer (non-magnetic layer or the like) 101C is arranged between the first ferromagnetic layer 101A and the second ferromagnetic layer 101B. One of the first ferromagnetic layer 101A and the second ferromagnetic layer 101B functions as a magnetization fixed layer, and the other functions as a magnetization free layer. For example, the first ferromagnetic layer 101A functions as a magnetization free layer, and the second ferromagnetic layer 101B functions as a magnetization fixed layer. In this case, the direction of magnetization of the magnetization free layer changes relative to the direction of magnetization of the magnetization fixed layer. The first ferromagnetic layer 101A and the second ferromagnetic layer 101B have different coercive forces, and the coercive force of the layer that functions as the magnetization fixing layer is larger than the coercive force of the layer that functions as the magnetization free layer. .. The thickness of the first ferromagnetic layer 101A and the second ferromagnetic layer 101B is preferably about 1 to 10 nm.

The first ferromagnetic layer 101A and the second ferromagnetic layer 101B are known materials having ferromagnetism so that the coercive force is different from each other, for example, metals such as Cr, Mn, Co, Fe, Ni, and these metals. It is made of a material selected from a ferromagnetic alloy or the like containing one or more kinds of. Further, the first ferromagnetic layer 101A and the second ferromagnetic layer 101B are alloys containing these metals and at least one element of B, C, and N (specifically, Co-Fe). Or Co-Fe-B) or the like.

Further, in order to obtain a higher output, it is preferable to use a Whistler alloy such as Co ₂ FeSi. Whisler alloys include intermetallic compounds with a chemical composition of X ₂ YZ. X is a transition metal element or noble metal element of Group Co, Fe, Ni, or Cu on the periodic table, and Y is a transition metal of Group Mn, V, Cr, or Ti, or the same element as X. Z is a typical element of groups III to V. Examples of the Whisler alloy include Co ₂ FeSi, Co ₂ MnSi, Co ₂ Mn _1-a Fe _a Al _b Si _1-b (0 ≦ a ≦ 1, 0 ≦ b ≦ 1) and the like.

In order to fix the magnetization of the ferromagnetic layer (magnetization fixed layer) that functions as the magnetization fixing layer, an antiferromagnetic layer may be added so as to be in contact with the magnetization fixing layer. Further, the magnetization of the magnetization fixing layer may be fixed by utilizing the magnetic anisotropy caused by the crystal structure, shape and the like. For the antiferromagnetic layer, FeO, CoO, NiO, CuFeS ₂ , IrMn, FeMn, PtMn, Cr, Mn or the like can be used.

It is preferable to use a non-magnetic material for the spacer layer 101C. The spacer layer 101C is composed of a layer made of a conductor, an insulator or a semiconductor, or a layer containing an energizing point made of a conductor in the insulator.

For example, when the spacer layer 101C is composed of an insulator, the magnetoresistive element 101 becomes a tunnel magnetoresistive (TMR) effect element, and when the spacer layer 101C is composed of metal, a giant magnetoresistance (GMR). : Giant Magnetoresis) It becomes an effect element.

When an insulating material is applied as the spacer layer 101C, an insulating material such as Al ₂ O ₃ or Mg O can be used. A high reluctance rate of change can be obtained by adjusting the film thickness of the spacer layer 101C so that the coherent tunneling effect is exhibited between the first ferromagnetic layer 101A and the second ferromagnetic layer 101B. In order to efficiently utilize the TMR effect, the thickness of the spacer layer 101C is preferably about 0.5 to 3.0 nm.

When the spacer layer 101C is made of a conductive material, a conductive material such as Cu, Ag, Au or Ru can be used. In order to efficiently utilize the GMR effect, the thickness of the spacer layer 101C is preferably about 0.5 to 3.0 nm.

When the spacer layer 101C is composed of a semiconductor, a material such as ZnO, In ₂ O ₃ , SnO ₂ , ITO, GaO _x or Ga _{2 Ox} can be used. In this case, the thickness of the spacer layer 101C is preferably about 1.0 to 4.0 nm.

When a layer including a current-carrying point composed of a conductor in an insulator is applied as the spacer layer 101C, CoFe, CoFeB, CoFeSi, ComnGe, CoMnSi, and _ComnAl are contained in the insulator composed of _Al2O3 or MgO. , Fe, Co, Au, Cu, Al or Mg, it is preferable to have a structure including a current-carrying point composed of a conductor. In this case, the thickness of the spacer layer 101C is preferably about 0.5 to 2.0 nm.

In the magnetoresistive sensor 101, both the first ferromagnetic layer 101A and the second ferromagnetic layer 101B are magnetized free layers, and two magnetization free layers and a spacer layer arranged between these two magnetization free layers are provided. It can also be a magnetoresistive effect element having. In this case, the magnetization directions of the first ferromagnetic layer 101A and the second ferromagnetic layer 101B can be relatively changed. As an example, a magnetoresistive element in which two magnetization free layers are magnetically coupled to each other via a spacer layer can be mentioned. More specifically, there is an example in which two free magnetized layers are magnetically coupled to each other via a spacer layer so that the directions of magnetization of the two free magnetized layers are antiparallel to each other when an external magnetic field is not applied. Can be mentioned.

<Magnetic field application mechanism>
The magnetic field application mechanism 20 shown in FIG. 2 includes a first magnetic member 102, a second magnetic member 104, a support portion 113, and a coil 106. The first magnetic member 102 is arranged on the first ferromagnetic layer 101A side of the magnetoresistive effect element 101, and the second magnetic member 104 is arranged on the second ferromagnetic layer 101B side of the magnetoresistive effect element 101. There is. The coil 106 is wound around the protrusion 102B. The coil 106 induces a magnetic flux, and the induced magnetic flux concentrates on the protrusion 102B to form a magnetic field toward the opposing second magnetic member 104. In FIG. 2, the coil 106 is a spiral coil spirally wound around the protrusion 102B. In FIG. 2, the coil 106 has one layer in the z direction, but may be laminated in two or more layers.
The magnetic field application mechanism 20 shown in FIG. 2 includes a second magnetic member 104 and a coil 106, but either one or both may not be provided. Further, although the magnetic field application mechanism 20 shown in FIG. 2 includes the support portion 113, the support portion 113 may not be provided.

The first magnetic member 102, the support portion 113, and the second magnetic member 104 are made of a magnetic material. For the first magnetic member 102, the support portion 113, and the second magnetic member 104, for example, an alloy of Fe, Co, Ni, Ni and Fe, an alloy of Fe and Co, or an alloy of Fe and Co and B may be used. Can be done. The coil 106 has a highly conductive wiring pattern, and for example, copper, aluminum, or the like can be used.

The first magnetic member 102 includes a protruding portion 102B protruding from the element side surface 102Aa. The first magnetic member 102 shown in FIG. 2 includes a protruding portion 102B and a base portion 102A. The base portion 102A is a main portion of the first magnetic member 102, and is a portion extending in the xy in-plane direction in FIG.
The support portion 113 is a portion connecting the first magnetic member 102 and the second magnetic member 104, and is a portion for stabilizing the flow of the magnetic field. The protrusion 102B is a portion where the magnetic flux line flows out from the surface thereof or the magnetic flux line flows into the surface thereof. Further, the magnetic flux line flowing out from the protrusion 102B or the magnetic flux line flowing in is mainly responsible for the magnetic flux line applied to the magnetization free layer from the first magnetic member 102 and the second magnetic member 104. Here, "bearing the main" means playing the main from the viewpoint of the strength of the magnetic field (magnetic flux density).
The number of protrusions 102B is not limited to one, and may be plural. In the example shown in FIG. 2, the element side surface 102Aa is the surface of the base 102A on the second magnetic member 104 side. The shape of the element side surface 102Aa does not matter.

The second magnetic member 104 is arranged at a position where the magnetoresistive element 101 is sandwiched between the second magnetic member 104 and the first magnetic member 102.

<First magnetic member>
The first magnetic member will be described with reference to FIGS. 3 and 4.
The first magnetic member 102 is a member that functions as a magnetic field application mechanism for applying a static magnetic field to the magnetoresistive element 101, and is arranged on the first ferromagnetic layer 101A side of the magnetoresistive element 101. There is.
In the examples shown in FIGS. 3 and 4, the first magnetic member 102 is located on the base 102A having a constant horizontal cross section (cross section orthogonal to the stacking direction L) and on the magnetoresistive sensor 101 side of the base 102A. It is composed of an element side portion 102B which is disposed and has a horizontal cross-sectional area smaller than the horizontal cross-sectional area of the base 102A. Explaining with reference to FIG. 3, the portion of the base 102A arranged on the side of the magnetoresistive element 101 is the surface indicated by the reference numeral 102Aa, and the element side portion 102B extends from the surface 102Aa to the side of the magnetoresistive element 101. It is the existing part.
Hereinafter, the surface of the first magnetic member 102 on the side of the magnetoresistive element in the stacking direction L may be abbreviated as "the surface of the first magnetic member on the element side". The “element-side surface of the first magnetic member” refers to all surfaces (exposed surfaces) of the element-side portion 102B (in FIG. 4A, the surface 102S2, the surface 102S4, and the surface 102S5 are referred to, and FIG. In b), among the exposed surfaces of the surface 102BS1, the surface 102BS2 and the surface 102BS3) and the base 102A, the surface on the magnetoresistive effect element side in the stacking direction L (in FIG. 4A, the surface 102S1 and the surface). It refers to 102S3. In FIG. 4B, there is no corresponding surface). That is, the surface pointed to by reference numeral 102S in FIG. 4A and the surface pointed to by reference numeral 102BS in FIG. 4B are “surfaces on the element side of the first magnetic member”.

In the first magnetic member 102, the surfaces 102S (FIG. 4 (a)) and 102BS (FIG. 4 (b)) on the magnetoresistive effect element side in the stacking direction L are on the first magnetic member 102 side of the first ferromagnetic layer 101A. First virtual plane V-V'including the surface 101Aa (for convenience of illustration, the entire first virtual plane cannot be shown, and the dotted line indicated by V and the dotted line indicated by V'are separated from each other. , Each dotted line shows a cross section of a part of the first virtual plane.) It is formed so that the distance from it varies.
Here, the first virtual plane VV'is a virtual plane including the surface 101Aa on the first magnetic member 102 side of the first ferromagnetic layer 101A. In other words, it is a virtual plane parallel to the surface 101Aa on the first magnetic member 102 side of the first ferromagnetic layer 101A and including the surface 101Aa.

Typical shapes of the base include, for example, cylindrical, elliptical, and prismatic shapes.
Further, the element-side portion is a portion that bears the variation in the distance between the element-side surface of the first magnetic member and the first virtual plane, and the shape of the element-side portion is not particularly limited as long as it is the case, and the element-side portion is not particularly limited. When the shape of the above is a shape that projects stepwise toward the magnetoresistive effect element in the stacking direction L (in the present specification, the element side portion of such a shape is referred to as a “projecting portion”), the typical shape thereof is For example, columnar, elliptical, prismatic, and semi-moon columnar ones can be mentioned.

FIG. 4A is a schematic cross-sectional view of the magnetoresistive device 100 shown in FIG. 2 in which only the first magnetic member 102 is extracted. In the magnetoresistive effect device 100, both the base portion and the element side portion will be described as having a columnar shape.
In FIG. 4A, the base 102A has a side surface 102Ab parallel to the stacking direction L, the diameter of the horizontal cross section of the base is D, and the diameter of the horizontal cross section of the protrusion 102B is D1 smaller _than D. ..
The element side portion is not particularly limited as long as it has a shape having a horizontal cross section smaller than the horizontal cross section of the base portion, and may have a shape in which the diameter is continuously reduced as shown in FIG. 4B, for example. The first magnetic member 102 shown in FIG. 4B includes a base portion 102A having the same shape as that of FIG. 4A and a conical trapezoidal element side portion 102BB. In this case, the shape may be reduced in diameter at the same ratio as shown in FIG. 4B, or may be reduced in diameter at different ratios.

Next, the range of "the surface of the first magnetic member on the element side" will be described with reference to FIG.
The first magnetic member of the present invention is formed so that the surface on the element side varies in distance from the first virtual plane including the surface on the first magnetic member side of the first ferromagnetic layer. The portion closer to the magnetoresistive sensor side than the surface on the magnetoresistive effect side (surface 102Aa in the example shown in FIG. 4) (in the example shown in FIG. 4, the element side portion 102B (projection portion 102B)). ), 102BB).
All the surfaces on the magnetoresistive sensor side formed by the portion form a part of the surface on the element side. In the example shown in FIG. 4A, the protruding portion 102B is the portion thereof, and all the surfaces (102S2, 102S4, 102S5) on the side of the magnetoresistive effect element 101 constituting the protruding portion 102B are one of the surfaces on the element side. Make up the part.
Further, of the element side surface 102Aa of the base portion 102A, a portion that is not covered by the protruding portion 102B and is exposed also constitutes a part of the surface on the element side. In the example shown in FIG. 4A, the surfaces 102S1 and 102S3 also form a part of the surface on the element side.
As described above, in the example shown in FIG. 4A, the surface 102S on the element side of the first magnetic member 102 is composed of the surfaces 102S1 to 102S5.

Further, in the example shown in FIG. 4B, the surface 102BS on the element side is composed of the surface 102BS1 to the surface 102BS3. In the example shown in FIG. 4B, since the element side surface 102Aa of the base 102A is covered with the element side portion 102BB, there is no exposed portion on the element side surface 102Aa of the base 102A.

The base portion 102A and the protruding portion 102B may be integrated or separate.
The projecting portion 102B may have a multi-stage structure in which a plurality of projecting portions are stacked in the projecting direction (for example, a multi-stage structure in which columns having different diameters are stacked from the base 102A side in descending order of diameter). (For two stages, see FIG. 6).
The protruding portion may be one in which the cross-sectional area of the surface orthogonal to the protruding direction continuously changes, and the protruding portion is orthogonal to the portion in which the cross-sectional area continuously changes and the protruding portion as shown in FIG. It may be composed of a protruding portion having a constant cross-sectional area of the surface.

At least a part of the element-side surface of the element-side portion may be a plane parallel to the first virtual plane VV'. For example, in FIG. 4A, it is the surface 102S2, and in FIG. 4B, it is the surface 102BS2.

The material of the first magnetic member 102 may be either a soft magnetic material or a hard magnetic material. FIG. 2 illustrates a case where a soft magnetic material (yoke) is used as the first magnetic member 102, and a coil 106 for applying a magnetic field to the magnetoresistive effect element is wound around the protrusion 102B. .. In this example, the coil 106 shows an example of a spiral coil in which a metal pattern is spirally wound, but the type of the coil 106 is not limited. Here, the illustration of the depth portion of the coil 106 is omitted. Further, by adjusting the value of the current flowing through the coil 106, the magnitude of the static magnetic field applied to the magnetoresistive effect element 101 can be changed.

Although FIG. 2 shows an example in which the coil 106 is wound around the protrusion 102B, the coil 106 may be wound around another portion of the first magnetic member 102.

When the first magnetic member 102 is a soft magnetic material, the material thereof is a soft magnetic material such as a metal or an alloy containing at least one of Fe, Ni and Co (for example, a NiFe alloy, a CoFe alloy or the like). ) Can be used.

When the first magnetic member 102 is a hard magnetic material, the coil 106 may or may not be wound around the first magnetic member 102 as shown in FIG. When a hard magnetic material is used as the first magnetic member 102, a CoPt alloy, FePt alloy, CoCrPt alloy or the like can be used as the material thereof. Further, a material in which an antiferromagnetic material such as IrMn is magnetically bonded to the above-mentioned soft magnetic material to fix the magnetization direction of the soft magnetic material can also be used as the first magnetic member 102. In that case, the coil may or may not be wound around the first magnetic member 102 as shown in FIG.

<High frequency signal line>
The high frequency signal line may be provided separately from the first electrode wiring 7 and the second electrode wiring 8. In a plan view from the stacking direction L, the high frequency signal line may or may not overlap a part or all of the magnetoresistive sensor 101. The number of high-frequency signal lines is not limited, and may be one or a plurality of lines. When there are a plurality of lines, it is preferable that the high frequency signal lines are arranged so that the high frequency magnetic fields generated from the respective lines strengthen each other at the position of the magnetoresistive effect element 101.

<Electrode wiring>
As shown in FIG. 3, the first electrode wiring 7 and the second electrode wiring 8 are directly connected to both ends of the magnetic resistance effect element 101 in the stacking direction L, that is, the first ferromagnetic layer 101A and the second ferromagnetic layer 101B, respectively. Has been done. The first electrode wiring 7 and the second electrode wiring 8 may be indirectly connected to the first ferromagnetic layer 101A and the second ferromagnetic layer 101B via other layers.
A current or voltage is applied to the magnetoresistive element 101 via at least one of the first electrode wiring 7 and the second electrode wiring 8. Further, at least one of the first electrode wiring 7 and the second electrode wiring 8 transmits a signal output from the magnetoresistive effect element 101. For example, a direct current or a direct current voltage is applied to the magnetoresistive effect element 101 via the first electrode wiring 7 and the second electrode wiring 8. Further, for example, by adopting a configuration in which the first electrode wiring 7 transmits a signal (high frequency voltage or high frequency current) output from the magnetoresistive effect element 101, the high frequency due to the low resistance of the first electrode wiring 7 is adopted. Deterioration of characteristics is prevented. On the other hand, by adopting a configuration in which the first electrode wiring 7 transmits a signal (high frequency voltage or high frequency current) input to the magnetoresistive effect element 101, the resistance of the first electrode wiring 7 is reduced, resulting in high frequency characteristics. Deterioration is prevented.

As the material of the first electrode wiring 7 and the second electrode wiring 8, for example, materials having conductivity such as Ta, Cu, Au, AuCu, Ru, and Al can be used.

FIG. 5 is a schematic cross-sectional view for explaining the magnetoresistive device 100 according to the first embodiment of the present invention in more detail. The support portion 113 is not shown in FIG. 5 (the same applies to FIGS. 7 to 10).
In FIG. 5, R ₀ to R ₄ indicate a range when viewed in a plan view from the stacking direction L, and the arrangement of R ₁ to R ₄ is simply due to the convenience of drawing. Here, the width of R ₀ corresponds to the horizontal width of the base 102A (diameter when the base is a cylinder) when the base 102A of the first magnetic member 102 has a vertical side surface as shown in the drawing. do. Further, the width of R ₂ is the horizontal width of the protruding portion 102B when the protruding portion 102B of the first magnetic member 102 has a vertical side surface as shown in the drawing (diameter when the protruding portion is a cylinder). Corresponds to.
In FIG. 5, when the first electrode wiring 7 is divided by thickness, the thickness gradually changes between the portion 7A (thin portion) and the portion 7B (thickest portion), and the portion 7A and the portion 7B are connected. It consists of a portion 7C.
The first electrode wiring 7 has a surface 102S on the element side of the first magnetic member 102 and a first virtual plane VV'in a range _R0 that overlaps with the first magnetic member 102 in a plan view from the stacking direction L. A portion 7B thicker than a portion 7A which is a portion in the closest range (first closest range) _R2 having the closest distance is provided outside the closest range _R2 .
More specifically, in the configuration shown in FIGS. 2 to 5, the range of the first electrode wiring 7 that overlaps with the first magnetic member 102 in a plan view from the stacking direction L is the range _R1 in FIG. It is a portion indicated by (that is, a portion including a portion 7A, a connecting portion 7B, and a part of the portion 7B). Further, the range in which the distance between the first magnetic member 102 and the first virtual plane VV'is closest to each other when viewed in a plan view from the stacking direction L is the range of the surface 102S on the element side of the first magnetic member 102. It is the range _R2 corresponding to the surface 102S2 which is the surface of the protrusion 102B on the side of the magnetoresistive element 101. Further, in the closest range R ₂ , the range in which the first electrode wiring 7 overlaps with the first magnetic member 102 when viewed in a plan view from the stacking direction L is the range R ₃ . The portion of the first electrode wiring 7 in the closest range R ₂ is the portion of reference numeral 7A (the portion of the first electrode wiring 7 in the range R ₃ ), and the first electrode wiring 7 has a portion 7B thicker than the portion 7A. It has the closest contact range R ₂ outside.
Of the first magnetic member 102, at least a part of the surface of the protrusion 102B on the magnetoresistive element 101 side (in the example shown in FIG. 5, the entire surface of the surface 102S2) is closest to the first virtual plane VV'. is doing.

The thickness of the portion 7A of the first electrode wiring 7 is not limited, but is, for example, about 10 nm to 100 nm.

The thickness of the thickest portion 7B of the first electrode wiring 7 is not limited, but is, for example, about 100 nm to 1000 nm.

In the configuration shown in FIGS. 2 to 5, the first electrode wiring 7 has a portion 7C in which the thickness gradually changes between the portions 7A and 7B to connect the portions 7A and 7B. However, it is not necessary to have the connecting portion 7C.
When the portion 7C to be connected is not provided and the portion is the thickest portion, the effect of widening the low resistance range is obtained.
On the other hand, in the case of the configuration having the portion 7C in which the thickness gradually changes and the portion 7A and the portion 7B are connected, the effect of reducing the loss of transmission of the high frequency signal is reduced as compared with the case where the thickness changes sharply. Play.

In the configurations shown in FIGS. 2 to 5, there is only one thickest portion, but there may be a plurality of thick portions.
Further, the thickness of the portion thicker than the portion in the closest range _R2 of the first electrode wiring 7 is not limited to one type, and may be a plurality.
Outside the closest range _R2 , the portion 7B has a portion protruding toward the first magnetic member 102 from the portion 7A (the portion 7B becomes thicker at least toward the first magnetic member 102 than the portion 7A). ) Is preferable.

FIG. 6 is a schematic cross-sectional view showing a modified example of the shape of the first electrode wiring in the magnetoresistive device 100 shown in FIG.
In the first electrode wiring 7'of the magnetoresistive device 100'shown in FIG. 6, a portion 7B thicker than the portion 7A'in the first closest range on both sides of the magnetoresistive element 101 in a plan view, Has 7B'. That is, when the first electrode wiring 7'is divided by the thickness, the thickness gradually increases between the portion 7A'(thin portion), the portions 7B and 7B'(the thickest portion) sandwiching the portion 7A'(thin portion), and the portions 7B and 7B'(the thickest portion). Instead, it consists of portions 7C and 7C'that connect the portion 7A and the portion 7B.

The example shown in FIG. 7 is a case where the first magnetic member has three stages (the protruding portion has two stages).
The first magnetic member 112 includes a base portion 112A, a first protruding portion 102B, and a second protruding portion 112C.
In this example, the first electrode wiring 17 is composed of a portion 17A (thin portion) and a portion 17B (thickest portion), and a portion 17C connecting the portion 17A and the portion 17B with a gradual change in thickness between them. ..
The first electrode wiring 17 has a range R ₀ that overlaps with the first magnetic member 112 when viewed in a plan view from the stacking direction L, and the surface 112 on the element side of the first magnetic member 112 and the first virtual plane VV. A portion 17B thicker than a portion 17A, which is a portion in the closest contact range ₍ first closest contact range) R5, which is closest to _the'closest contact range R5, is provided outside the closest contact range R5.

In the example shown in FIG. 7, the thickest portion 17B has a large thickness on both sides (upper and lower sides in the drawing) of the stacking direction L, but there is no particular limitation on the mode in which the thickest portion 17B is thicker than the portion 17A. .. Outside the closest range R5, the portion 17B has a portion protruding from the portion 17A toward the first magnetic member 112 ₍ the portion 17B becomes thicker at least toward the first magnetic member 112 than the portion 17A). ) Is preferable.

"Second embodiment"
FIG. 8 is a cross-sectional view schematically showing a configuration example of the magnetoresistive device 200 according to the second embodiment of the present invention.
In addition to the configuration shown in the magnetic resistance effect device 100 according to the first embodiment, the magnetic resistance effect device 200 has a region that does not overlap with the first magnetic member 102 in a plan view from the stacking direction L (range R shown in FIG. 5). In a region other than ₀ ), a first pad portion 120 having a thickness thicker than that of the first electrode wiring 7 is further provided so as to be electrically connected to the first electrode wiring 7 and electrically connected to the outside. Is different. In the example shown in FIG. 8, the first pad portion 120 extends in the stacking direction L.

The first pad portion 120 has at least a part of the end face in the stacking direction L exposed and is used as a bonding pad for bonding an external connection wire or a bump, or is the first pad portion 120 in an inspection during a manufacturing process. An inspection can be performed by applying a probe (inspection needle) to the pad portion.

The shape of the first pad portion 120 is not particularly limited as long as it fulfills the above object.
Based on the function of the first pad portion 120, the size of the first pad portion 120 in a plan view is not limited, but for example, when the plan view is circular, the diameter thereof is, for example, about 50 μm to 150 μm. The thickness thereof (thickness in the stacking direction L) is not limited, but is, for example, about 2 μm to 50 μm.

As the material of the first pad portion 120, for example, a material having conductivity such as Ta, Cu, Au, AuCu, Ru, Al and the like can be used.

"Third embodiment"
FIG. 9 is a cross-sectional view schematically showing a configuration example of the magnetoresistive device 300 according to the third embodiment of the present invention.
In addition to the configuration shown in the magnetic resistance effect device 100 according to the first embodiment, the magnetic resistance effect device 300 is arranged on the second ferromagnetic layer 101B side of the magnetic resistance effect element 101, and a magnetic field is generated in the magnetic resistance effect element 101. The second magnetic member 104 to which the above is applied further includes the protruding portion 104B, and the second electrode wiring 18 also overlaps with the second magnetic member 104 in a plan view from the stacking direction L, similarly to the first electrode wiring. It is thicker than the portion 18A which is the portion in the closest contact range (second closest contact range) where the distance between the element-side surface 104S of the second magnetic member 104 and the second virtual plane V1-V1'is closest. The difference is that the portion 18B is outside its closest range. In FIG. 9, the second electrode wiring 18 is composed of a portion 18A and a portion 18B having different thicknesses from each other, and a portion 18C connecting the portions 18A and the portion 18B with the thickness gradually changing between them.
Here, the second virtual plane V1-V1'is a virtual plane including the surface 101Ba on the second magnetic member 104 side of the second ferromagnetic layer 101B.
As the material of the second magnetic member 104, the same material as those exemplified as the material of the first magnetic member 102 can be used. Further, the material of the second magnetic member 104 and the material of the first magnetic member 102 may be the same or different. Further, although FIG. 9 shows an example in which the coil is not wound around the second magnetic member 104, it may be wound around the protrusion 104B or other parts of the second magnetic member 104. As for the second magnetic member 104 and the coil, the description of the first magnetic member 102 and the coil in the first embodiment and the second embodiment can be applied.

"Fourth embodiment"
FIG. 10 is a cross-sectional view schematically showing a configuration example of the magnetoresistive device 400 according to the fourth embodiment of the present invention.
In addition to the configuration shown in the magnetic resistance effect device 300 according to the third embodiment, the magnetic resistance effect device 400 has a region that does not overlap with the first magnetic member 102 in a plan view from the stacking direction L (range R shown in FIG. 5). In the region other than ₀ ), the first pad portion 120 having a thickness thicker than that of the first electrode wiring 7 so as to be electrically connected to the first electrode wiring 7 and electrically connected to the outside, and the stacking direction. In a region that does not overlap with the second magnetic member 104 when viewed from L in a plan view, the thickness is larger than that of the second electrode wiring 18 so that it can be electrically connected to the second electrode wiring 18 and electrically connected to the outside. The difference is that the thick second pad portion 130 is further provided. In the example shown in FIG. 10, the first pad portion 120 and the second pad portion 130 extend in the stacking direction L.

The second pad portion 130 also has at least a part of the end face in the stacking direction L exposed and has the same function as the first pad portion 120, and its size and thickness can be about the same.
As for the second pad portion 130, similarly to the first pad portion 120, those having conductivity such as Ta, Cu, Au, AuCu, Ru, and Al can be used.

(Application example 1)
FIG. 11 shows an example of a circuit of a high frequency device 250 to which the magnetoresistive device 100 is applied. The magnetoresistive device 100 may be replaced with the magnetoresistive devices 200, 300, 400 according to other embodiments. It should be noted that the magnetic resistance effect element, the electrode wiring, the high frequency signal line, the first magnetic member, the second magnetic member, the support portion, the coil, and the high frequency device 250 in which other circuit elements and the like are incorporated are collectively referred to as magnetic. Sometimes called a resistance effect device. The high-frequency device 250 includes a magnetoresistive effect element 101, a first magnetic member 102, a second magnetic member 104, a support portion (not shown in FIGS. 11 to 15), a coil 106, a high-frequency signal line 103, and the like. It is provided with a DC application terminal 119. The high frequency device 250 receives a signal from the first port 150 and outputs a signal from the second port 121.

<Magnetic resistance effect element, magnetic field application mechanism>
In the example shown in FIG. 11, the upper electrode 109 and the lower electrode 110 are formed at both ends of the magnetoresistive effect element 101. In the first application example, the second ferromagnetic layer 101B functions as a magnetization fixed layer, and the first ferromagnetic layer 101A functions as a magnetization free layer. The same applies to the application examples 2 to 5 described later.

The first magnetic member 102 shown in FIG. 11 has a base portion 102A and a protruding portion 102B protruding toward the magnetoresistive element 101 side (one surface 102Aa side of the base portion) in the stacking direction L. The protruding portion 102B protrudes from one surface 102Aa of the base portion toward the magnetoresistive effect element 101 in the stacking direction L.

The frequency of the output signal can be set by using the magnetic field application mechanism (first magnetic member 102, second magnetic member 104, support portion and coil 106). The frequency of the output signal changes depending on the ferromagnetic resonance frequency of the first ferromagnetic layer 101A functioning as the free magnetizing layer. The ferromagnetic resonance frequency of the first ferromagnetic layer 101A changes depending on the effective magnetic field in the first ferromagnetic layer 101A. The effective magnetic field in the first ferromagnetic layer 101A can be changed by an external magnetic field (static magnetic field). Therefore, the ferromagnetic resonance frequency of the first ferromagnetic layer 101A can be changed by changing the magnitude of the external magnetic field applied to the first ferromagnetic layer 101A from the magnetic field application mechanism.

<1st port and 2nd port>
The first port 150 is an input terminal of the high frequency device 250. The first port 150 corresponds to one end of the high frequency signal line 103. By connecting an AC signal source (not shown) to the first port 150, an AC signal (high frequency signal) can be applied to the high frequency device 250. The high frequency signal applied to the high frequency device 250 is, for example, a signal having a frequency of 100 MHz or more.

The second port 121 is an output terminal of the high frequency device 250. The second port 121 corresponds to one end of an output signal line 122 that transmits a signal output from the magnetoresistive sensor 101. The output signal line 122 corresponds to the line 8 shown in FIG.

<High frequency signal line>
One end of the high frequency signal line 103 in FIG. 11 is connected to the first port 150.
Further, the high frequency device 250 is used by connecting the other end of the high frequency signal line 103 to the reference potential via the reference potential terminal 123. In FIG. 11, it is connected to the ground G as a reference potential. The ground G may be attached to the outside of the high frequency device 250. A high-frequency current flows in the high-frequency signal line 103 according to the potential difference between the high-frequency signal input to the first port 150 and the ground G. When a high-frequency current flows in the high-frequency signal line 103, a high-frequency magnetic field is generated from the high-frequency signal line 103. This high-frequency magnetic field is applied to the first ferromagnetic layer 101A of the magnetoresistive element 101.

<Output signal line, line>
The output signal line 122 propagates the signal output from the magnetoresistive effect element 101. The output signal line 122 and the upper electrode 109 correspond to the first electrode wiring 7 shown in FIG. The signal output from the magnetoresistive effect element 101 is a signal having a frequency selected by utilizing the ferromagnetic resonance of the first ferromagnetic layer 101A that functions as a magnetization free layer. One end of the output signal line 122 in FIG. 11 is connected to the magnetoresistive effect element 101 via the upper electrode 109, and the other end is connected to the second port 121. That is, the output signal line 122 in FIG. 11 connects the magnetoresistive effect element 101 and the second port 121.

Further, the output signal line 122 (for example, the inductor 125) between the power supply 127, the output signal line 122, the magnetic resistance effect element 101, the line 124, the portion constituting the closed circuit by the ground G, and the second port 121. A capacitor may be provided in the output signal line 122) between the connection point to the output signal line 122 and the second port 121. By providing a capacitor in this portion, it is possible to avoid adding an invariant component of the current to the output signal output from the second port 121.

One end of the line 124 is connected to the magnetoresistive effect element 101 via the lower electrode 110. The line 124 and the lower electrode 110 correspond to the second electrode wiring 8 shown in FIG. Further, the high frequency device 250 is used by connecting the other end of the line 124 to the reference potential via the reference potential terminal 126. In FIG. 11, the line 124 is connected to the ground G common to the reference potential of the high frequency signal line 103, but it may be connected to another reference potential. In order to simplify the circuit configuration, it is preferable that the reference potential of the high frequency signal line 103 and the reference potential of the line 124 are common.

As the shape of each line and the ground G, it is preferable to apply a microstrip line (MSL) type or a coplanar waveguide (CPW) type. When applying the microstrip line (MSL) type or the coplanar waveguide (CPW) type, it is preferable to design the line width and the ground-to-ground distance so that the characteristic impedance of the line and the impedance of the circuit system are equal to each other. By designing in this way, it is possible to suppress the transmission loss of the line.

<DC application terminal>
The DC application terminal 119 is connected to the power supply 127 and applies a DC current or a DC voltage in the stacking direction of the magnetoresistive element 101. As used herein, the direct current is a current whose direction does not change with time, and includes a current whose magnitude changes with time. Further, the DC voltage is a voltage whose direction does not change with time, and includes a voltage whose magnitude changes with time. The power supply 127 may be a DC current source or a DC voltage source.

The power supply 127 may be a DC current source capable of generating a constant DC current, or may be a DC voltage source capable of generating a constant DC voltage. Further, the power supply 127 may be a DC current source in which the magnitude of the generated DC current value can be changed, or may be a DC voltage source in which the magnitude of the generated DC voltage value can be changed.

The current density of the current applied to the magnetoresistive effect element 101 is preferably smaller than the oscillation threshold current density of the magnetoresistive effect element 101. The oscillation threshold current density of the magnetic resistance effect element is that the magnetization of the ferromagnetic layer, which functions as the magnetization free layer of the magnetic resistance effect element, starts aging motion at a constant frequency and a constant amplitude, and the magnetic resistance effect element oscillates. It means the current density that becomes the threshold value (the output (resistance value) of the magnetic resistance effect element fluctuates at a constant frequency and a constant amplitude).

An inductor 125 is arranged between the DC application terminal 119 and the output signal line 122. The inductor 125 cuts the high frequency component of the current and allows the invariant component of the current to pass through. The output signal (high frequency signal) output from the magnetoresistive effect element 101 by the inductor 125 efficiently flows to the second port 121. Further, the inductor 125 causes the invariant component of the current to flow through a closed circuit composed of the power supply 127, the output signal line 122, the magnetoresistive element 101, the line 124, and the ground G.

As the inductor 125, a chip inductor, an inductor with a pattern line, a resistance element having an inductor component, or the like can be used. The inductance of the inductor 125 is preferably 10 nH or more.

<Functions of high frequency devices>
When a high frequency signal is input to the high frequency device 250 from the first port 150, a high frequency current corresponding to the high frequency signal flows in the high frequency signal line 103. A high-frequency magnetic field generated by a high-frequency current flowing in the high-frequency signal line 103 is applied to the first ferromagnetic layer 101A of the magnetoresistive sensor 101.

In the magnetization of the first ferromagnetic layer 101A that functions as a magnetization free layer, the frequency of the high-frequency magnetic field applied to the first ferromagnetic layer 101A by the high-frequency signal line 103 is close to the ferromagnetic resonance frequency of the first ferromagnetic layer 101A. It vibrates greatly in some cases. This phenomenon is a ferromagnetic resonance phenomenon.

When the vibration of the magnetization of the first ferromagnetic layer 101A becomes large, the change in the resistance value in the magnetoresistive element 101 becomes large. For example, when a constant direct current is applied to the magnetoresistive effect element 101 from the direct current application terminal 119, the change in the resistance value of the magnetoresistive effect element 101 is the potential difference between the upper electrode 109 and the lower electrode 110. As a change, it is output from the second port 121. Further, for example, when a constant DC voltage is applied to the magnetic resistance effect element 101 from the DC application terminal 119, the resistance value change of the magnetic resistance effect element 101 flows between the lower electrode 110 and the upper electrode 109. It is output from the second port 121 as a change in the current value.

That is, when the frequency of the high-frequency signal input from the first port 150 is close to the ferromagnetic resonance frequency of the first ferromagnetic layer 101A, the fluctuation amount of the resistance value of the magnetoresistive effect element 101 is large. , A large signal is output from the second port 121. On the other hand, when the frequency of the high frequency signal deviates from the ferromagnetic resonance frequency of the first ferromagnetic layer 101A, the fluctuation amount of the resistance value of the magnetoresistive effect element 101 is small, and the signal is transmitted from the second port 121. Is hardly output. That is, the high frequency device 250 functions as a high frequency filter capable of selectively passing a high frequency signal of a specific frequency.

<Other uses>
Further, in the above application example, the case where the high frequency device 250 is used as a high frequency filter is presented, but the high frequency device 250 can also be applied to a high frequency device such as an isolator, a phase shifter, and an amplifier (amplifier).

When the high frequency device 250 is used as an isolator, a signal is input from the second port 121. Even if a signal is input from the second port 121, it is not output from the first port 1, so that it functions as an isolator.

When the high frequency device 250 is used as a phase shifter, attention is paid to the frequency of any one point in the output frequency band when the output frequency band changes.
When the output frequency band changes, the phase at a specific frequency changes, so it functions as a phase shifter.

When the high frequency device 250 is used as an amplifier, the DC current or DC voltage applied from the power supply 127 is set to a predetermined magnitude or more. By doing so, the signal output from the second port 121 becomes larger than the signal input from the first port 150, and functions as an amplifier.

As described above, the high frequency device 250 can function as a high frequency device such as a high frequency filter, an isolator, a phase shifter, and an amplifier.

Although FIG. 11 illustrates the case where the magnetoresistive effect element 101 is one, there may be a plurality of magnetoresistive effect elements 101. In this case, the plurality of magnetoresistive elements 101 may be connected in parallel to each other or may be connected in series. For example, by using a plurality of magnetoresistive elements 101 having different ferromagnetic resonance frequencies, the band of the selected frequency (passing frequency band) can be widened. Further, the high frequency magnetic field generated in the output signal line 122 that outputs the output signal from one magnetoresistive effect element 100 may be applied to another magnetoresistive element 101. With such a configuration, the output signal is filtered a plurality of times, so that the filtering accuracy of the high frequency signal can be improved.

(Application example 2)
The high-frequency device 250 shown in FIG. 11 is of a type driven by applying a high-frequency magnetic field from the high-frequency signal line 103 to the first ferromagnetic layer 101A, but the high-frequency device is not limited to this type. .. FIG. 11 shows an example of a circuit of a high-frequency device 260 of a type that is driven by applying a high-frequency current flowing through a high-frequency signal line to the magnetoresistive effect element 101. The same components as those of the high frequency device 250 shown in FIG. 11 described above are designated by the same reference numerals. The same applies to the application examples 3 to 5 described later.

The high-frequency device 260 includes a magnetoresistive effect element 101, a first magnetic member 102, a second magnetic member 104, a support portion, a coil 106, a DC application terminal 119, an input signal line 128, and an output signal line 129. And. The input signal line 128 and the upper electrode 109 correspond to the first electrode wiring 7 shown in FIG. The output signal line 129 and the lower electrode 110 correspond to the second electrode wiring 8 shown in FIG. The input signal line 128 is the wiring between the first port 150 and the upper electrode 109, and the output signal line 129 is the wiring between the second port 121 and the lower electrode 110.

The high frequency device 260 receives a signal from the first port 150 and outputs a signal from the second port 121. In the high-frequency device 260 shown in FIG. 12, the magnetization of the first ferromagnetic layer 101A vibrates due to the spin transfer torque generated by passing a high-frequency current in the stacking direction L of the magnetoresistive effect element 101. When the input high frequency signal is the same as the ferromagnetic resonance frequency of the first ferromagnetic layer 101A (in this case, also referred to as the spin torque resonance frequency of the magnetic resistance effect element 101), the magnetization of the first ferromagnetic layer 101A is It vibrates greatly. The resistance value of the magnetoresistive element 101 changes periodically due to the periodic vibration of the magnetization of the first ferromagnetic layer 101A.

As shown in FIG. 12, when a DC current or a DC voltage is applied from the DC application terminal 119 so that the DC current flows in the magnetic resistance effect element 101 from the magnetized free layer to the magnetized fixed layer, it is magnetic. The resistance value of the resistance effect element 101 changes periodically in the same phase as the high frequency current. Therefore, the larger the fluctuation amount of the resistance value of the magnetoresistive element 101, the larger the output signal (output power) can be obtained from the second port 121.

That is, when the frequency of the high-frequency signal input from the first port 150 is close to the ferromagnetic resonance frequency of the first ferromagnetic layer 101A, the fluctuation amount of the resistance value of the magnetoresistive effect element 101 is large. , A large signal is output from the second port 121. On the other hand, when the frequency of the high frequency signal deviates from the ferromagnetic resonance frequency of the first ferromagnetic layer 101A, the fluctuation amount of the resistance value of the magnetic resistance effect element 101 is small, and most of the signal is from the second port 121. Not output. That is, the high frequency device 260 can also function as a high frequency filter that selectively passes a high frequency signal of a specific frequency.

Further, when a DC current or a DC voltage is applied from the DC application terminal 119 so that the DC current flows in the magnetic resistance effect element 101 from the magnetized fixed layer to the magnetized free layer, the magnetic resistance effect element 101 The resistance value changes periodically in a phase shifted by 180 ° from the high frequency current. In this case, the larger the fluctuation amount of the resistance value of the magnetoresistive element 101, the smaller the output signal (output power) from the second port 121 can be made. In this case, the high frequency device 260 can function as a high frequency filter that selectively blocks high frequency signals of a specific frequency.

Like the high frequency device 250, the high frequency device 260 can also function as a high frequency device such as a phase shifter or an amplifier.

(Application example 3)
For example, as shown in FIG. 13, the high frequency signal line 160 connected to the first port 150 and the reference potential terminal 123 may also serve as the lower electrode 110 or the upper electrode 109 connected to the magnetoresistive effect element 101. .. FIG. 13 is a schematic diagram of a high frequency device 270 in which the high frequency signal line 160 also serves as an upper electrode 109 connected to the magnetoresistive effect element 101. The high frequency signal line 160 and the upper electrode 109 correspond to the first electrode wiring 7'shown in FIG. 7. The high frequency signal line 122 and the lower electrode 110 correspond to the second electrode wiring 8 shown in FIG. 7. In this case, the first ferromagnetic layer 101A utilizes the high-frequency magnetic field generated from the high-frequency signal line 160 by the high-frequency current flowing in the high-frequency signal line 160 and applied to the magnetic resistance effect element 101 (first ferromagnetic layer 101A). The magnetization of the can be vibrated. Further, the magnetization of the first ferromagnetic layer 101A may be vibrated by utilizing the spin transfer torque applied from the high frequency signal line 160 and generated by the high frequency current flowing in the stacking direction L of the magnetoresistive element 101. Further, even if the magnetization of the first ferromagnetic layer 101A is vibrated by using the spin orbit torque generated by the spin current generated in the direction orthogonal to the direction in which the high frequency current flowing through the portion corresponding to the upper electrode of the high frequency signal line 160 flows. good. That is, at least one of these high-frequency magnetic fields, spin transfer torque, and spin orbit torque can be used to vibrate the magnetization of the first ferromagnetic layer 101A.

Like the high frequency device 250, the high frequency device 270 can function as a high frequency device such as a high frequency filter, a phase shifter, and an amplifier.

In the above application examples 1 to 3, the DC application terminal 119 may be connected between the inductor 125 and the ground G, or may be connected between the upper electrode 109 and the ground G, respectively.

Further, a resistance element may be used instead of the inductor 125 in the above application examples 1 to 3. This resistance element has a function of cutting a high frequency component of a current by a resistance component. This resistance element may be either a chip resistance or a resistance due to a pattern line. The resistance value of this resistance element is preferably equal to or higher than the characteristic impedance of the output signal lines 122 and 129. For example, when the characteristic impedance of the output signal lines 122 and 129 is 50Ω and the resistance value of the resistance element is 50Ω, 45% of the high frequency power can be cut by the resistance element. Further, when the characteristic impedance of the output signal lines 122 and 129 is 50Ω and the resistance value of the resistance element is 500Ω, 90% of the high frequency power can be cut by the resistance element. Even in this case, the output signal output from the magnetoresistive effect element 101 can be efficiently sent to the second port 121.

Further, in the above application examples 1 to 3, if the power supply 127 connected to the DC application terminal 119 has a function of cutting the high frequency component of the current and at the same time passing the invariant component of the current, the inductor 125 may be omitted. Even in this case, the output signal output from the magnetoresistive effect element 101 can be efficiently sent to the second port 121.

(Application example 4)
In the above, the case where the magnetoresistive device of the present invention is used as a filter has been illustrated, but in the magnetoresistive device of the present invention, vibration is generated in the magnetization of the magnetization free layer by applying a DC current to the magnetoresistive element. It can also be applied to an oscillator that utilizes the generated spin torque oscillation effect. FIG. 14 is a diagram showing a configuration example of a circuit of a high frequency device 280 to which the magnetoresistive device of the present invention is applied as an oscillator. The same parts as in Application Examples 1 to 3 are indicated by the same reference numerals.

In the high frequency device 280, the magnetization of the first ferromagnetic layer 101A, which functions as a free magnetization layer, vibrates (oscillates) due to the spin torque generated when a direct current is applied to the magnetoresistive sensor 101. At this time, a high-frequency voltage corresponding to the ferromagnetic resonance frequency of the first ferromagnetic layer 101A is generated from the magnetoresistive sensor 101, and the second port (output port) 121 side connected to the magnetoresistive element 101 is generated. A high-frequency current output from the magnetoresistive sensor 101 flows through the high-frequency signal line 131. In the example of FIG. 14, the inductor 125 is connected to the line 132 on the DC input terminal 119 side, and the capacitor 133 is connected to the high frequency signal line 131. The high frequency signal line 131 and the upper electrode 109 correspond to the first electrode wiring 7 shown in FIG. The line 136 and the lower electrode 110 correspond to the second electrode wiring 8 shown in FIG.

(Application example 5)
Further, the magnetic resistance effect device of the present invention can also be applied to a rectifier or a detector using a spin torque diode effect in which a DC voltage is generated when a high frequency current (alternating current) is applied to the magnetic resistance effect element. FIG. 15 is a diagram showing a configuration example of a circuit of a high frequency device 290 to which the magnetoresistive device of the present invention is applied as a rectifier. The same parts as in Application Examples 1 to 3 are indicated by the same reference numerals.

In the high-frequency device 290, an alternating current (high-frequency current) is applied to the magnetoresistive element 101 from the first port (input port) 120, and a high-frequency current flows through the high-frequency signal line 134 on the first port (input port) 120 side. When a current is applied to the magnetoresistive effect element 101, a DC voltage is generated from the magnetoresistive effect element 101, and a DC voltage is output from the second port (output port) 121 via the line 135. In the example of FIG. 15, the capacitor 133 is connected to the high frequency signal line 134, and the inductor 125 is connected to the line 135. The high frequency signal line 134 and the upper electrode 109 correspond to the first electrode wiring 7 shown in FIG. The line 137 and the lower electrode 110 correspond to the second electrode wiring 8 shown in FIG.

7, 7', 17 1st electrode wiring 7A, 17A Part in the 1st closest range 7B, 7B', 17B Thicker part than the part in the 1st closest range 8, 18 2nd electrode wiring 18A 2nd Part in the closest range 18B Thicker than the part in the second closest range 20 Magnetic field application mechanism 100, 200, 300, 400 Magnetic resistance effect device 101 Magnetic resistance effect element 101A First ferromagnetic layer 101B Second ferromagnetic layer 101C Spacer layer 102, 112 1st magnetic member 102A Base 102Aa Element side surface 102B Projection 102S, 102BS Element side surface 104 2nd magnetic member 104A Base 104B Projection 120 1st pad 130 2nd pad VV' Virtual plane of 1 V1-V1'Second virtual plane

Claims (6)

A magnetoresistive element laminated so that a spacer layer is arranged between the first ferromagnetic layer and the second ferromagnetic layer,
A first magnetic member arranged on the first ferromagnetic layer side of the magnetoresistive element and applying a magnetic field to the magnetoresistive element, and
A first electrode wiring connected to the first ferromagnetic layer side of the magnetoresistive element is provided.
In the first magnetic member, the distance between the surface on the magnetoresistive element side in the stacking direction and the first virtual plane including the surface on the first magnetic member side of the first ferromagnetic layer varies. Being formed,
In the first electrode wiring, the distance between the surface of the first magnetic member on the magnetoresistive effect element side and the first virtual plane is within a range where the first magnetic member overlaps with the first magnetic member in a plan view from the stacking direction. A portion thicker than the portion in the closest first closest range is provided outside the first closest range .
In the region that does not overlap with the first magnetic member when viewed in a plan view from the stacking direction,
A magnetoresistive device comprising a first pad portion that is electrically connected to the first electrode wiring and is thicker than the first electrode wiring so that it can be electrically connected to the outside . The first magnetic member has a protrusion that projects stepwise toward the magnetoresistive element in the stacking direction, and at least a part of the surface of the protrusion on the magnetoresistive element side is the first. The magnetoresistive effect device according to claim 1, which is closest to the virtual plane. The magnetoresistive effect device according to claim 1 or 2, wherein the first electrode wiring is connected so that the thickness gradually approaches each other in portions having different thicknesses. A magnetoresistive element laminated so that a spacer layer is arranged between the first ferromagnetic layer and the second ferromagnetic layer,
A first magnetic member arranged on the first ferromagnetic layer side of the magnetoresistive element and applying a magnetic field to the magnetoresistive element, and
A first electrode wiring connected to the first ferromagnetic layer side of the magnetoresistive element is provided.
In the first magnetic member, the distance between the surface on the magnetoresistive element side in the stacking direction and the first virtual plane including the surface on the first magnetic member side of the first ferromagnetic layer varies. Being formed,
In the first electrode wiring, the distance between the surface of the first magnetic member on the magnetoresistive effect element side and the first virtual plane is within a range where the first magnetic member overlaps with the first magnetic member in a plan view from the stacking direction. A portion thicker than the portion in the closest first closest range is provided outside the first closest range.
A second magnetic member arranged on the second ferromagnetic layer side of the magnetoresistive sensor and applying a magnetic field to the magnetoresistive element, and a second magnetic member.
A second electrode wiring connected to the second ferromagnetic layer side of the magnetoresistive element is provided.
In the second magnetic member, the distance between the surface on the magnetoresistive element side in the stacking direction and the second virtual plane including the surface on the second magnetic member side of the second ferromagnetic layer varies. Being formed,
In the second electrode wiring, the distance between the surface of the second magnetic member on the magnetoresistive effect element side and the second virtual plane is within a range where the second magnetic member overlaps with the second magnetic member when viewed in a plan view from the stacking direction. A magnetoresistive effect device having a portion thicker than the portion in the closest second closest range outside the second closest range. The first magnetic member has a protrusion that projects stepwise toward the magnetoresistive element in the stacking direction, and at least a part of the surface of the protrusion on the magnetoresistive element side is the first. The magnetoresistive effect device according to claim 4, which is closest to the virtual plane. In the region that does not overlap with the second magnetic member when viewed in a plan view from the stacking direction,
3 . The magnetoresistive effect device described.

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