JP2019103086A - Magnetic resistance effect device - Google Patents

Abstract

To provide a magnetic resistance effect device capable of reducing a capacitance component existed in between a magnetic member used as a magnetic field application mechanism and a high frequency signal line pass.SOLUTION: A magnetic resistance effect device 100 comprises: a magnetic resistance effect element 101 formed by laminating so that a spacer 101C is arranged to between a first ferromagnetic layer 101A and a second ferromagnetic layer 101B; a first magnetic member 102 that is arranged on one side of the magnetic resistance effect element 101 in a direction parallel to a lamination direction L, and includes a first projection part 105 on the magnetic resistance effect element 101 side; and a high frequency signal line pass 103 that is arranged in the magnetic resistance effect element 101 side from the first projection part 105 in the direction parallel to the lamination direction L. An area of a region to which the first projection part 105 is overlapped with a surface S vertical to a projection direction D of the first projection part 105 becomes smaller than that of a rear end 105B in a tip 105A of the first projection part.SELECTED DRAWING: Figure 1

Description

  The present invention relates to a magnetoresistive effect device using a magnetoresistive effect element.

  In recent years, with the advancement of mobile communication terminals such as mobile phones, speeding up of wireless communication has been promoted. Since the communication speed is proportional to the bandwidth of the frequency used, the frequency band required for communication increases, and accordingly, the number of high frequency filters required for the mobile communication terminal also increases. In addition, research in the field of spintronics, which is expected to be applied to new high frequency components, is actively conducted. Among them, one of the phenomena that has attracted attention is the spin torque resonance phenomenon due to the magnetoresistance effect element (see Non-Patent Document 1).

  For example, ferromagnetic resonance can be generated in the magnetization of the magnetization free layer included in the magnetoresistive element by applying a static magnetic field using a magnetic field application mechanism simultaneously with flowing an alternating current to the magnetoresistive element. The resistance value of the magnetoresistive element vibrates periodically at a frequency corresponding to the ferromagnetic resonance frequency. Further, the resistance value of the magnetoresistive element is similarly vibrated by applying a high frequency magnetic field to the magnetization free layer of the magnetoresistive element. The ferromagnetic resonance frequency changes depending on the strength of the static magnetic field applied to the magnetoresistive element, and the resonance frequency is generally included in a high frequency band of several to several tens of GHz.

  Patent Document 1 discloses a technology for changing the ferromagnetic resonance frequency by changing the strength of the magnetic field applied to the magnetoresistive effect element, and a device such as a high frequency filter using this technology is proposed. There is.

JP, 2017-63397, A

Nature, Vol. 438, no. 7066, pp. 339-342, 17 November 2005

  Although the electromagnet type and the strip line type are mentioned as an example of a magnetic field application mechanism for applying a magnetic field to a magnetoresistive effect element in patent documents 1, about the detailed composition, it is not indicated. Generally as a method of applying a magnetic field to a magnetoresistive effect element, the method of applying the magnetic field which generate | occur | produces from magnetic members, such as a yoke, to a magnetoresistive effect element can be considered. However, according to the present inventor's research, it has been found that, with this method, there is a possibility that the high frequency characteristics of the device may be deteriorated due to the capacitance component existing between the magnetic member and the high frequency signal line.

  The present invention has been made in view of the above circumstances, and provides a magnetoresistance effect device that can reduce the capacitance component, which is present between a magnetic member used as a magnetic field application mechanism and a high frequency signal line. The purpose is

  The present invention provides the following means in order to solve the above problems.

(1) A magnetoresistive effect element according to an aspect of the present invention is a magnetoresistive effect element formed by laminating such that a spacer layer is disposed between a first ferromagnetic layer and a second ferromagnetic layer. A first magnetic member disposed on one side of the magnetoresistive element in a direction parallel to the stacking direction and having a first protrusion on the side of the magnetoresistive element in a direction parallel to the stacking direction; And a high-frequency signal line disposed closer to the magnetoresistive element than the first protrusion, and the first protrusion overlaps a plane perpendicular to the direction parallel to the stacking direction. The area of the region is smaller at the front end of the first protrusion than at the rear end, and at least one of the high frequency current flowing through the high frequency signal line and the magnetic field generated from the high frequency signal line is the magnetoresistive element. Applied In so that, or the like a high-frequency current output from the magnetoresistive element flows through the high-frequency signal transmission line it is constituted.

(2) In the magnetoresistive device according to (1), a coil wound around the first protrusion may be further provided.

(3) In the magnetoresistive device according to any one of (1) and (2), it is preferable that the area decreases monotonously as it approaches the tip of the first protrusion.

(4) In the magnetoresistive device according to any one of the above (1) to (3), the first protrusion has a multistage structure in which a plurality of portions are stacked in the protrusion direction. It is also good.

(5) In the magnetoresistive device according to (4), the taper angle of the portion may be different for each step.

(6) In the magnetoresistive device according to any one of (4) and (5), the coil includes one layer of spiral coil, and the one layer of spiral coil includes a plurality of stacked portions. Preferably, at least two of the portions are wound around.

(7) In the magnetoresistive device according to any one of the above (1) to (6), the second magnetic member is disposed on the other side of the magnetoresistive element in the direction parallel to the stacking direction. It may be done.

(8) In the magnetoresistive device according to (7), the second magnetic member has a second protrusion on the side of the magnetoresistive device, and the second protrusion is parallel to the stacking direction. It is preferable that the area of the region overlapping the plane perpendicular to the direction be smaller at the front end of the second protrusion than at the rear end.

  In the magnetoresistance effect device according to the present invention, the magnetic member (first magnetic member) carrying the magnetic field application mechanism has the protrusion (first protrusion), and the tip of the protrusion near the high frequency signal line The area is getting smaller. Therefore, the capacitance component existing between the high frequency signal line and the magnetic member is reduced. Therefore, in the magnetoresistance effect device of the present invention, deterioration of the high frequency characteristics can be suppressed as a whole.

  In the magnetoresistive device of the present invention, the area of the rear end of the protrusion of the magnetic member is larger than the area of the front end, and accordingly, the magnetic resistance at the rear end of the protrusion is reduced. Can. Therefore, the magnetic flux can be increased, and a strong magnetic field can be applied to the magnetoresistive element.

(A) It is sectional drawing which shows typically the structure of the magnetoresistive effect device based on 1st embodiment of this invention. (B) It is an enlarged perspective view of the 1st projection which constitutes the magnetoresistive effect device of (a). It is sectional drawing which shows typically the structure of the magnetoresistive effect device based on the modification 1 of 1st embodiment. FIG. 7 is a cross-sectional view schematically showing a configuration of a magnetoresistive effect device according to a second embodiment of the present invention. It is sectional drawing which shows typically the structure of the magnetoresistive effect device based on 3rd embodiment of this invention. It is sectional drawing which shows typically the structure of the magnetoresistive effect device based on 4th embodiment of this invention. It is sectional drawing which shows typically the structure of the magnetoresistive effect device based on 5th embodiment of this invention. It is sectional drawing which shows typically the structure of the magnetoresistive effect device based on 6th embodiment of this invention. It is a figure which shows the structural example of the circuit of a high frequency device to which the magnetoresistive effect device of this invention is applied. It is a figure which shows the other structural example of the circuit of a high frequency device to which the magnetoresistive effect device of this invention is applied. It is a figure which shows the other structural example of the circuit of a high frequency device to which the magnetoresistive effect device of this invention is applied. It is a figure which shows the other structural example of the circuit of a high frequency device to which the magnetoresistive effect device of this invention is applied. It is a figure which shows the other structural example of the circuit of a high frequency device to which the magnetoresistive effect device of this invention is applied.

  Hereinafter, the present invention will be described in detail with reference to the drawings as appropriate. The drawings used in the following description may show enlarged features for convenience for the purpose of making the features of the present invention easier to understand, and the dimensional ratio of each component may be different from the actual one. is there. The materials, dimensions, and the like exemplified in the following description are merely examples, and the present invention is not limited to them, and can be appropriately modified and implemented within the scope of the effects of the present invention.

First Embodiment
FIG. 1A is a cross-sectional view schematically showing a configuration example of a magnetoresistance effect device 100 according to a first embodiment of the present invention. The magnetoresistance effect device 100 includes at least a magnetoresistance effect element (MR element) 101, a first magnetic member 102, and a high frequency signal line 103 through which a high frequency current flows. The magnetoresistance effect device 100 is configured such that a magnetic field (high frequency magnetic field) generated from the high frequency signal line 103 and a magnetic field (static magnetic field) generated from the first magnetic member 102 are applied to the magnetoresistance effect element 101 ing.

  The magnetoresistance effect element 101 is stacked such that a spacer layer (nonmagnetic layer or the like) 101C is disposed between the first ferromagnetic layer 101A and the second ferromagnetic layer 101B. One of the first ferromagnetic layer 101A and the second ferromagnetic layer 101B functions as a magnetization fixed layer, and the other functions as a magnetization free layer. In this case, the magnetization direction of the magnetization free layer changes relatively to the magnetization direction of the magnetization fixed layer. The first ferromagnetic layer 101A and the second ferromagnetic layer 101B have different coercivities, and the coercivity of the layer functioning as the magnetization fixed layer is larger than the coercivity of the layer functioning as the magnetization free layer. . The thickness of the first ferromagnetic layer 101A and the second ferromagnetic layer 101B is preferably about 1 to 10 nm.

  The first ferromagnetic layer 101A and the second ferromagnetic layer 101B are known materials having ferromagnetism, for example, metals such as Cr, Mn, Co, Fe, Ni, and the like so that the coercive forces are different from each other. And a material selected from a ferromagnetic alloy or the like containing one or more of them. The first ferromagnetic layer 101A and the second ferromagnetic layer 101B are alloys containing these metals and at least one or more elements of B, C, and N (specifically, Co—Fe). And Co-Fe-B).

Moreover, in order to obtain a higher output, it is preferable to use a Heusler alloy such as Co ₂ FeSi. The Heusler alloy comprises an intermetallic compound having a chemical composition of X ₂ YZ. X is a transition metal element or noble metal element of Co, Fe, Ni or Cu group on the periodic table, Y is a transition metal of Mn, V, Cr or Ti group or the same element as X, Z is a typical element of Group III to Group V. Examples of the Heusler alloy include Co ₂ FeSi, Co ₂ MnSi, and Co ₂ Mn _1-a Fe _a Al _b Si _1-b .

In order to fix the magnetization of the ferromagnetic layer (magnetization fixed layer) functioning as the magnetization fixed layer, an antiferromagnetic layer may be added to be in contact with the magnetization fixed layer. In addition, the magnetization of the magnetization fixed layer may be fixed by utilizing the magnetic anisotropy caused by the crystal structure, the shape, and the like. For the antiferromagnetic layer, FeO, CoO, NiO, CuFeS ₂ , IrMn, FeMn, PtMn, Cr or Mn can be used.

  It is preferable to use a nonmagnetic material for the spacer layer 101C. The spacer layer 101C is formed of a layer formed of a conductor, an insulator or a semiconductor, or a layer including a conduction point formed of a conductor in the insulator.

  For example, in the case where the spacer layer 101C is formed of an insulator, the magnetoresistive effect element 101 is a tunneling magnetoresistive (TMR) effect element, and in the case where the spacer layer 101C is formed of a metal, giant magnetoresistive (GMR) : Giant Magnetoresistance) It becomes an effect element.

When an insulating material is applied as the spacer layer 101C, an insulating material such as Al ₂ O ₃ or MgO can be used. A high magnetoresistance change rate can be obtained by adjusting the film thickness of the spacer layer 101C so that a coherent tunnel effect is exhibited between the first ferromagnetic layer 101A and the second ferromagnetic layer 101B. In order to use the TMR effect efficiently, the thickness of the spacer layer 101C is preferably about 0.5 to 3.0 nm.

  When the spacer layer 101C is formed of a conductive material, a conductive material such as Cu, Ag, Au, or Ru can be used. In order to use the GMR effect efficiently, the thickness of the spacer layer 101C is preferably about 0.5 to 3.0 nm.

When the spacer layer 101C is formed of a semiconductor, a material such as ZnO, In ₂ O ₃ , SnO ₂ , ITO, GaO _x, or Ga ₂ O _x can be used. In this case, the thickness of the spacer layer 101C is preferably about 1.0 to 4.0 nm.

In the case where a layer including a conduction point constituted by a conductor in the insulator is applied as the spacer layer 101C, CoFe, CoFeB, CoFeSi, CoMnGe, CoMnSi, CoMnAl, or the like is contained in the insulator constituted by Al ₂ O ₃ or MgO. It is preferable to have a structure including a conduction point constituted by a conductor such as Fe, Co, Au, Cu, Al or Mg. In this case, the thickness of the spacer layer 101C is preferably about 0.5 to 2.0 nm.

  In the magnetoresistive element 101, both of the first ferromagnetic layer 101A and the second ferromagnetic layer 101B are magnetization free layers, and two magnetization free layers and a spacer layer disposed between the two magnetization free layers are used. It can also be a magnetoresistive effect element. In this case, the magnetization directions of the first ferromagnetic layer 101A and the second ferromagnetic layer 101B can be changed relative to each other. As an example, a magnetoresistive element in which two magnetization free layers are magnetically coupled to each other via a spacer layer can be mentioned. More specifically, there is an example in which two magnetization free layers are magnetically coupled to each other through a spacer layer such that the magnetization directions of the two magnetization free layers are antiparallel to each other in the state where no external magnetic field is applied. It can be mentioned.

  The first magnetic member 102 is a member that functions as a magnetic field application mechanism for applying a static magnetic field to the magnetoresistive effect element 101, and the magnetoresistive effect element 101 in the direction parallel to the base 104 and the stacking direction L. And a first protrusion 105 on the side (the one surface 104A side of the base). The first projecting portion 105 projects from the one surface 104A of the base toward the magnetoresistive effect element 101 in the direction parallel to the stacking direction L. The first magnetic member 102 is disposed on one side (upper side in FIG. 1A) of the magnetoresistive element 101 in the direction parallel to the stacking direction L. The base 104 and the first projection 105 may be integral or separate.

FIG. 1 (b) is an enlarged perspective view of the first protrusion 105. A plane S perpendicular to a direction parallel to the stacking direction L (in this example, a plane S perpendicular to the projecting direction D of the first projecting portion 105) and a plane parallel to the stacking direction L When viewed, the area of the region of the first protrusion 105 overlapping the surface S is smaller at the front end 105A of the first protrusion 105 than at the rear end 105B. That is, as shown in FIG. 1 (b), the surface S and the area of the region _{S 1} in which the distal end 105A overlaps the first protrusions 105, the surface S and the rear end 105B and overlap area S of the first protrusions 105 It is smaller than ₂ area.

In the present embodiment, the area of the area of the first protrusion 105 overlapping the surface S monotonously decreases toward the tip 105A of the first protrusion, but the tip 105A and the rear end 105B are illustrated. In the meantime, the increase or decrease of the area of the area overlapping with the surface S is not limited. That is, in any position between the tip 105A and the rear end 105B, the area of a region that overlaps the surface S is, it may be smaller than the area of the region S _1, be larger than the area of the region S ₂ Good.

The shortest distance between the first magnetic member 102 and the high frequency signal line 103 in the direction parallel to the stacking direction L is taken as a distance d. The distance d is a distance of a direction component parallel to the stacking direction L. The first protrusion 105 is a surface facing the magnetoresistive effect element 101 in the direction parallel to the stacking direction L (a surface facing downward in FIG. 1, that is, the tip 105A of the first protrusion and the inclined surface 105C) It is preferable that the distance of the direction component parallel to the stacking direction L from the high-frequency signal line 103 be a plane that is twice or more the distance d. In a plan view from a direction parallel to the stacking direction L, the area of such a surface portion is at least 1⁄5 of the area of the first protrusion 105 (equal to the area of the region S _{2 in} this example) Is preferred.

  The material of the first magnetic member 102 may be either a soft magnetic material or a hard magnetic material. FIG. 1 exemplifies a case where a soft magnetic material (yoke) is used as the first magnetic member 102, and a coil 106 for applying a magnetic field to the magnetoresistive element is wound around the first projecting portion 105. ing. In this example, the coil 106 is an example of a spiral coil in which a metal pattern is spirally wound, but the type of the coil 106 is not limited. Here, the illustration of the depth portion of the coil 106 is omitted. Further, by adjusting the value of the current flowing through the coil 106, the magnitude of the static magnetic field applied to the magnetoresistance effect element 101 can be changed.

  Although FIG. 1 shows an example in which the coil 106 is wound around the first protrusion 105, the coil 106 may be wound around the other portion of the first magnetic member 102.

  When the first magnetic member 102 is a soft magnetic material, a soft magnetic material such as a metal or an alloy containing at least one of Fe, Ni and Co as its material (for example, NiFe alloy, CoFe alloy, etc.) Can be used.

  When the first magnetic member 102 is made of a hard magnetic material, the coil 106 may be wound around the first magnetic member 102 as shown in FIG. 1A, or may not be wound. When a hard magnetic material is used as the first magnetic member 102, a CoPt alloy, an FePt alloy, a CoCrPt alloy or the like can be used as the material. Further, an antiferromagnet such as IrMn may be magnetically coupled to the above-described soft magnetic material, and the direction in which the magnetization of the soft magnetic material is fixed may be used as the first magnetic member 102. In that case, as shown in FIG. 1A, the coil may or may not be wound around the first magnetic member 102.

  The high frequency signal line 103 is disposed closer to the magnetoresistive effect element 101 than the first protrusion 105 (specifically, the tip 105A thereof) in the direction parallel to the stacking direction L. In a plan view from the stacking direction L, the high frequency signal line 103 may or may not overlap a part or all of the magnetoresistive effect element 101.

  The number of high frequency signal lines 103 is not limited, and may be one or more. In the case of a plurality of lines, it is preferable that the high frequency signal lines 103 be arranged such that high frequency magnetic fields generated from the respective lines reinforce each other at the position of the magnetoresistive effect element 101.

  Lines 107 and 108 are connected to both ends of the magnetoresistive effect element 101 in the stacking direction L, respectively. A current or voltage is applied to the magnetoresistive element 101 through at least one of the line 107 and the line 108. Further, at least one of the line 107 and the line 108 transmits a signal output from the magnetoresistive element 101. For example, a direct current or a direct current voltage is applied to the magnetoresistive effect element 101 through the line 107 and the line 108. Further, for example, the signal line 108 transmits a signal (high frequency current or high frequency voltage) output from the magnetoresistive effect element 101. In order to enhance the conductivity of the magnetoresistive effect element 101, it is preferable that electrodes be provided at both ends of the magnetoresistive effect element 101. Here, an electrode provided at the upper end in the stacking direction of the magnetoresistive effect element 101 is referred to as an upper electrode 109, and an electrode provided at the lower end is referred to as a lower electrode 110. As a material of the line 107, the line 108, the upper electrode 109, and the lower electrode 110, for example, a material having conductivity such as Ta, Cu, Au, AuCu, Ru, or Al can be used.

  There is a path through which a high frequency current flows between the magnetic member and the high frequency signal line due to the influence of the capacitance component existing between the magnetic member and the high frequency signal line, so if this capacitive component is large, the high frequency of the magnetoresistive device The characteristics may deteriorate. For example, part of the high frequency current flowing through the high frequency signal line may be diverted to the magnetic member side, and the strength of the high frequency signal (high frequency magnetic field or high frequency current to be described later) applied to the magnetoresistive element may be reduced. . Also, there are cases where the split high frequency current flows to the output side without passing through the magnetoresistance effect element. Therefore, when the magnetoresistive effect device is applied to, for example, a high frequency filter to be described later, the pass characteristics and the blocking characteristics of the high frequency filter may be deteriorated.

On the other hand, in the magnetoresistance effect device 100 according to the present embodiment, the first magnetic member 102 carrying the magnetic field application mechanism has the first protrusion 105, and the first protrusion located near the high frequency signal line 103. The area of the tip 105A (area S ₁ ) of the portion 105 is smaller than the area of the rear end 105B (area S ₂ ). Therefore, the capacitance component existing between the high frequency signal line 103 and the first magnetic member 102 is reduced. Therefore, in the magnetoresistance effect device 100 according to the present embodiment, it is possible to suppress the deterioration of the above-described high frequency characteristics (pass characteristics, cutoff characteristics) as a whole.

In plan view from a direction parallel to the stacking direction L, the area of the area S ₁ where the surface S and the end 105A overlap even when the end 105A of the first protrusion 105 does not overlap the high frequency signal line 103 but if smaller than the area of the region S ₂ of the surface S and the rear end 105B overlap, it is possible to obtain the effect of the capacitance component decreases. The effect of reducing the capacitance component is that, in a plan view from a direction parallel to the stacking direction L, the area of the area where the surface S and the tip 105A overlap in the portion overlapping the high frequency signal line 103 of the first protrusion 105 is It becomes more remarkable by setting it as the structure smaller than the area of the area | region where the surface S and the back end 105B overlap. In this case, in a portion of the first protrusion 105 overlapping the high-frequency signal line 103 in plan view from a direction parallel to the stacking direction L, the area of the region of the first protrusion 105 overlapping the surface S is It may be monotonically decreasing as it approaches the tip 105A of one protrusion.

Further, in the magnetoresistive effect device 100 according to the present embodiment, the area of the rear end 105B (area S ₂ ) of the first protrusion of the first magnetic member 102 is smaller than the area of the front end 105A (area S ₁ ). The magnetic resistance at the rear end 105B of the first protrusion can be reduced accordingly. Therefore, the magnetic flux can be increased, and a strong magnetic field can be applied to the magnetoresistive effect element 101.

(Modification 1)
FIG. 2 is a cross-sectional view schematically showing the configuration of the magnetoresistive effect device 150 according to the first modification of the present embodiment. The same parts as in the first embodiment shown in FIG. 1 are denoted by the same reference numerals regardless of the difference in shape. In the magnetoresistive effect device 150, the tip 105A of the first protrusion 105 of the first magnetic member 102 is pointed. The configuration other than the first protrusion 105 is the same as the configuration (FIG. 1) of the magnetoresistive device 100 according to the above-described embodiment.

Also in this case, when the first protrusion 105 is viewed in plan from the direction parallel to the stacking direction L, a plane perpendicular to the direction parallel to the stacking direction L of the first protrusion 105 (in this example, the protrusion The area of the region overlapping the surface perpendicular to the direction D is smaller at the front end 105A of the first protrusion 105 than at the rear end 105B. That is, the area of the front end 105A of the first protrusion 105 indicates 0 nm ² or a value close thereto, which is smaller than the area (cross-sectional area) of the rear end 105B.

  In the magnetoresistance effect device 150 of the modified example 1, as in the case of the magnetoresistance effect device 100 of FIG. 1, the capacitance component can be made smaller than when the tip 105A of the first protrusion forms a surface. The deterioration of high frequency characteristics can be further suppressed.

Second Embodiment
FIG. 3 is a cross-sectional view schematically showing a configuration example of the magnetoresistive effect device 200 according to the second embodiment of the present invention. The same parts as in the first embodiment are denoted by the same reference numerals regardless of the difference in shape. In the magnetoresistance effect device 200, high frequency signal lines 111 and 112 are connected to both ends of the lamination direction L of the magnetoresistance effect element 101 in order to flow high frequency current to the magnetoresistance effect element 101. Alternatively, a high frequency current flowing through the high frequency signal line 112 is applied to the magnetoresistive effect element 101. In order to enhance the conductivity of the magnetoresistive effect element 101, it is preferable that the upper electrode 109 and the lower electrode 110 be provided at both ends of the magnetoresistive effect element 101 as in the first embodiment. The magnetoresistive effect device 200 does not have a component corresponding to the high frequency signal line 103 in the first embodiment, and the configuration other than that the lines 107 and 108 are replaced by the high frequency signal lines 111 and 112. The configuration is the same as the configuration (FIG. 1) of the magnetoresistance effect device 100 according to the first embodiment, and the same effect as the magnetoresistance effect device 100 can be obtained with regard to suppressing the deterioration of the high frequency characteristics.

Third Embodiment
FIG. 4 is a cross-sectional view schematically showing a configuration example of the magnetoresistance effect device 210 according to the third embodiment of the present invention. The same parts as in the first embodiment are denoted by the same reference numerals regardless of the difference in shape. In the magnetoresistive effect device 210, the first protrusion 105 has a multistage structure in which a plurality of portions 113 and 114 are stacked in the protrusion direction D. Although FIG. 4 illustrates the case where the first protrusion 105 has a two-step structure, it may have a three or more-step structure. The coil 106 is composed of a single layer spiral coil in which a metal pattern is spirally wound, and the single layer spiral coil is wound around the plurality of stacked portions 113 and 114. When the first protrusion 105 has a multistage structure in which three or more portions are stacked, the spiral coil of one layer is wound around at least two portions of the plurality of portions. It is done.

  When the first protrusion 105 has a multistage structure, the volume of the first protrusion 105 can be increased, and the magnetic resistance of the first protrusion 105 can be reduced. A strong magnetic field can be applied. The configuration other than the first projecting portion 105 is the same as the configuration (FIG. 1) of the magnetoresistive effect device 100 of the first embodiment, and the same effect as the magnetoresistive effect device 100 in suppressing deterioration of high frequency characteristics. Play.

Fourth Embodiment
FIG. 5 is a cross-sectional view schematically showing the configuration of a magnetoresistance effect device 220 according to a fourth embodiment of the present invention. The same places as the first and third embodiments are indicated by the same reference numerals regardless of the difference in shape. Even when the first protrusion 105 has a multi-stage structure, the side walls of the portions 113 and 114 constituting each step of the first protrusion 105 may each have a tapered shape, in which case the portions The taper angles of the side walls 113 and 114 may be different for each step. In the magnetoresistive effect device 150 of the present embodiment, the taper angle is different between the side wall of the portion 113 and the side wall of the portion 114 at the boundary of the step portion 115. The configuration other than the taper angle of the side wall of the first protrusion 105 is the same as the configuration (FIG. 4) of the magnetoresistive device 400 of the third embodiment described above.

  Also in this case, when the first protrusion 105 is viewed in plan from the direction parallel to the stacking direction L, a plane perpendicular to the direction parallel to the stacking direction L of the first protrusion 105 (in this example, the protrusion The area of the region overlapping the surface perpendicular to the direction D is smaller at the front end 105A of the first protrusion 105 than at the rear end 105B. Therefore, also in the magnetoresistance effect device 220 of the present embodiment, the capacitance component can be reduced as in the above-described embodiment, and deterioration of the high frequency characteristics can be suppressed.

Fifth Embodiment
FIG. 6 is a cross-sectional view schematically showing the configuration of the magnetoresistance effect device 230 according to the fifth embodiment of the present invention. The same parts as in the first embodiment are indicated by the same reference numerals. In the magnetoresistive effect device 230 of this embodiment, the other side (lower side in FIG. 6) of the magnetoresistive effect element 101 in the direction parallel to the stacking direction L, that is, the first magnetic member sandwiching the magnetoresistive effect element 101 The second magnetic member 116 is disposed on the opposite side of 102. The first magnetic member 102 and the second magnetic member 116 are preferably connected directly or through another magnetic member in a region outside the outer peripheral portion of the coil 106.

  The second magnetic member 116 is a member that functions as a magnetic field application mechanism for applying a static magnetic field to the magnetoresistive effect element 101, and is made of the same material as the first magnetic member 102. The configuration other than the second magnetic member 116 is the same as the configuration (FIG. 1) of the magnetoresistive device 100 of the first embodiment described above.

  By arranging the second magnetic member 116, much of the magnetic flux generated from the first magnetic member 102 extends toward the second magnetic member 116 and penetrates the magnetoresistive effect element 101 in the middle. As a result, a stronger magnetic field is applied to the magnetoresistive effect element 101, and the distance between the first magnetic member 102 and the high frequency signal line 103 can be further extended accordingly. Therefore, the capacitance component existing between the first magnetic member 102 and the high frequency signal line 103 can be further reduced.

Sixth Embodiment
FIG. 7 is a cross-sectional view schematically showing the configuration of the magnetoresistance effect device 240 according to the sixth embodiment of the present invention. Also in the magnetoresistance effect device 240 of the present embodiment, the second magnetic member 116 is disposed on the other side of the magnetoresistance effect element 101 as in the fifth embodiment. However, the second magnetic member 116 of the present embodiment has a base portion 117 and a second projecting portion 118 projecting toward the magnetoresistive element 101 from one surface 117 A of the base portion, and the second projecting portion 118 has a stacking direction L (in this example, a plane perpendicular to the protruding direction D ₂ of the second protrusions 118) plane perpendicular to a direction parallel to the area of a region overlapping with is smaller than the rear end 118B at the distal end 118A of the second projecting portion There is.

  In the present embodiment, the second magnetic member 116 has the projecting portion 118 having the same configuration as the first magnetic member 102. Therefore, the capacitance component existing between the high frequency signal line 103 and the second magnetic member 116 can be reduced.

Application Example 1
FIG. 8 shows an example of a circuit of a high frequency device 250 to which the magnetoresistive effect device 100 is applied. The magnetoresistive effect device 100 may be replaced with the magnetoresistive effect device 150 of the first modification or the magnetoresistive effect devices 210, 220, 230, 240 according to other embodiments. The high frequency device 250 in which other circuit elements and the like are incorporated together with the above-described magnetoresistive effect element, high frequency signal line, and first magnetic member may be collectively referred to as a magnetoresistive effect device. The high frequency device 250 includes a magnetoresistive effect element 101, a first magnetic member (magnetic field application mechanism) 102, a high frequency signal line 103, and a direct current application terminal 119. The high frequency device 250 receives a signal from the first port 120 and outputs a signal from the second port 121.

<Magnetoresistance effect element, magnetic field application mechanism>
As the magnetoresistance effect element 101 and the first magnetic member 102, one that satisfies the configuration of the magnetoresistance effect device 100 according to the above-described first embodiment is used as an example. In the application example 1, an example in which the first ferromagnetic layer 101A functions as a magnetization fixed layer and the second ferromagnetic layer 101B functions as a magnetization free layer will be described. The same applies to application examples 2 to 5 described later.

  The first magnetic member 102 can be used to set the frequency of the output signal. The frequency of the output signal changes according to the ferromagnetic resonance frequency of the second ferromagnetic layer 101B functioning as the magnetization free layer. The ferromagnetic resonance frequency of the second ferromagnetic layer 101B is changed by the effective magnetic field in the second ferromagnetic layer 101B. The effective magnetic field in the second ferromagnetic layer 101B is affected by the external magnetic field (static magnetic field). Therefore, the ferromagnetic resonance frequency of the second ferromagnetic layer 101B can be changed by changing the magnitude of the external magnetic field applied from the first magnetic member 102 to the second ferromagnetic layer 101B.

<First port and second port>
The first port 120 is an input terminal of the high frequency device 250. The first port 120 corresponds to one end of the high frequency signal line 103. By connecting an AC signal source (not shown) to the first port 120, an AC signal (high frequency signal) can be applied to the high frequency device 250. The high frequency signal applied to the high frequency device 250 is, for example, a signal having a frequency of 100 MHz or more.

  The second port 121 is an output terminal of the high frequency device 250. The second port 121 corresponds to one end of the output signal line 122 which transmits the signal output from the magnetoresistive effect element 101. The output signal line 122 corresponds to the line 108 shown in FIG.

<High frequency signal line>
One end of the high frequency signal line 103 in FIG. 8 is connected to the first port 120. Further, the high frequency device 250 is used by connecting the other end of the high frequency signal line 103 to the reference potential via the reference potential terminal 123. In FIG. 8, it is connected to the ground G as a reference potential. The ground G can be attached to the outside of the high frequency device 250. A high frequency current flows in the high frequency signal line 103 in accordance with the potential difference between the high frequency signal input to the first port 120 and the ground G. When a high frequency current flows in the high frequency signal line 103, a high frequency magnetic field is generated from the high frequency signal line 103. The high frequency magnetic field is applied to the second ferromagnetic layer 101 B of the magnetoresistive effect element 101.

<Output signal line, line>
The output signal line 122 propagates the signal output from the magnetoresistive effect element 101. The signal output from the magnetoresistance effect element 101 is a signal of a frequency selected using ferromagnetic resonance of the second ferromagnetic layer 101B functioning as a magnetization free layer. One end of the output signal line 122 in FIG. 8 is connected to the magnetoresistive effect element 101, and the other end is connected to the second port 121. That is, the output signal line 122 in FIG. 8 connects the magnetoresistive effect element 101 and the second port 121.

  Further, an output signal line 122 between a portion forming a closed circuit formed by the power supply 127, the output signal line 122, the magnetoresistive effect element 101, the line 124, and the ground G, and the second port 121 (as an example, A capacitor may be provided on the output signal line 122) between the connection to the output signal line 122 and the second port 121. By providing a capacitor in this portion, it is possible to prevent the invariance component of the current from being added to the output signal output from the second port 121.

  One end of the line 124 is connected to the magnetoresistive element 101. The line 124 corresponds to the line 107 shown in FIG. Further, the high frequency device 250 is used by connecting the other end of the line 124 to the reference potential via the reference potential terminal 126. Although in FIG. 8 the line 124 is connected to the ground G common to the reference potential of the high frequency signal line 103, it may be connected to other reference potentials. In order to simplify the circuit configuration, it is preferable that the reference potential of the high frequency signal line 103 and the reference potential of the line 124 be common.

  As a shape of each line and ground G, it is preferable to apply a micro strip line (MSL) type or a coplanar waveguide (CPW) type. When the microstrip line (MSL) type or the coplanar waveguide (CPW) type is applied, it is preferable to design the line width and the distance between the grounds so that the characteristic impedance of the line and the impedance of the circuit system become equal. By designing in this manner, the transmission loss of the line can be suppressed.

<DC application terminal>
The DC application terminal 119 is connected to the power supply 127 and applies a DC current or a DC voltage in the stacking direction of the magnetoresistance effect element 101. In the present specification, a direct current is a current whose direction does not change with time, and includes a current whose magnitude changes with time. Further, the DC voltage is a voltage whose direction does not change with time, and includes a voltage whose magnitude changes with time. The power source 127 may be a DC current source or a DC voltage source.

  The power source 127 may be a direct current source capable of generating a constant direct current, or may be a direct current voltage source capable of generating a constant direct current voltage. Further, the power source 127 may be a direct current source whose magnitude of the generated direct current value can change, or may be a direct current voltage source whose magnitude of the generated direct current voltage value can change.

  The current density of the current applied to the magnetoresistive effect element 101 is preferably smaller than the oscillation threshold current density of the magnetoresistive effect element 101. The oscillation threshold current density of the magnetoresistive element indicates that the magnetization of the ferromagnetic layer functioning as the magnetization free layer of the magnetoresistive element starts precession motion at a constant frequency and a constant amplitude, and the magnetoresistive element oscillates. Current density at which the output (resistance value of the magnetoresistance effect element fluctuates at a constant frequency and a constant amplitude) threshold value.

  An inductor 125 is disposed between the DC application terminal 119 and the output signal line 122. The inductor 125 cuts the high frequency component of the current and passes the invariant component of the current. The output signal (high frequency signal) output from the magnetoresistance effect element 101 by the inductor 125 efficiently flows to the second port 121. Further, due to the inductor 125, the invariable component of the current flows in a closed circuit composed of the power supply 127, the output signal line 122, the magnetoresistive effect element 101, the line 124, and the ground G.

  For the inductor 125, a chip inductor, an inductor with a patterned line, a resistive element having an inductor component, or the like can be used. The inductance of the inductor 125 is preferably 10 nH or more.

<Function of high frequency device>
When a high frequency signal is input to the high frequency device 250 from the first port 120, a high frequency current corresponding to the high frequency signal flows in the high frequency signal line 103. A high frequency magnetic field generated by a high frequency current flowing in the high frequency signal line 103 is applied to the second ferromagnetic layer 101 B of the magnetoresistive effect element 101.

  In the magnetization of the second ferromagnetic layer 101B functioning as the magnetization free layer, the frequency of the high frequency magnetic field applied to the second ferromagnetic layer 101B by the high frequency signal line 103 is close to the ferromagnetic resonance frequency of the second ferromagnetic layer 101B. If it vibrates greatly. This phenomenon is a ferromagnetic resonance phenomenon.

  When the oscillation of the magnetization of the second ferromagnetic layer 101B becomes large, the change in resistance value of the magnetoresistance effect element 101 becomes large. For example, when a constant direct current is applied to the magnetoresistive effect element 101 from the direct current application terminal 119, the change in resistance value of the magnetoresistive effect element 101 is determined by the potential difference between the upper electrode 109 and the lower electrode 110. It is outputted from the second port 121 as a change. Also, for example, when a constant DC voltage is applied to the magnetoresistive effect element 101 from the DC application terminal 119, the change in resistance value of the magnetoresistive effect element 101 flows between the lower electrode 110 and the upper electrode 109. It is output from the second port 121 as a change in current value.

  That is, when the frequency of the high frequency signal input from the first port 120 is a frequency close to the ferromagnetic resonance frequency of the second ferromagnetic layer 101B, the amount of fluctuation of the resistance value of the magnetoresistance effect element 101 is large. , And a large signal is output from the second port 121. On the other hand, when the frequency of the high frequency signal deviates from the ferromagnetic resonance frequency of the second ferromagnetic layer 101 B, the amount of change in the resistance value of the magnetoresistive effect element 101 is small, and the signal from the second port 121 is Is hardly output. That is, the high frequency device 250 functions as a high frequency filter that can selectively pass a high frequency signal of a specific frequency.

<Other use>
Further, in the application example described above, the high frequency device 250 is used as a high frequency filter. However, the high frequency device 250 can be applied to high frequency devices such as an isolator, a phase shifter, and an amplifier.

  When the high frequency device 250 is used as an isolator, a signal is input from the second port 121. Even when a signal is input from the second port 121, the signal is not output from the first port 1, and thus functions as an isolator.

  When the high frequency device 250 is used as a phase shifter, when the output frequency band changes, the frequency of one arbitrary point in the output frequency band is focused. When the output frequency band changes, the phase at a specific frequency changes, and thus functions as a phase shifter.

  When the high frequency device 250 is used as an amplifier, the DC current or DC voltage applied from the power source 127 is set to a predetermined value or more. By doing this, the signal output from the second port 121 is larger than the signal input from the first port 120, and the amplifier functions as an amplifier.

  As described above, the high frequency device 250 can function as a high frequency device such as a high frequency filter, an isolator, a phase shifter, or an amplifier.

  Although the case where the number of the magnetoresistive effect elements 101 is one is illustrated in FIG. 8, there may be a plurality of the magnetoresistive effect elements 101. In this case, the plurality of magnetoresistance effect elements 101 may be connected in parallel to one another or in series. For example, by using a plurality of magnetoresistive effect elements 101 having different ferromagnetic resonance frequencies, it is possible to widen the band (pass frequency band) of the selection frequency. Further, the high frequency magnetic field generated in the output signal line 122 which outputs the output signal from one magnetoresistance effect element 100 may be applied to another magnetoresistance effect element 101. With this configuration, the output signal is filtered a plurality of times, so that the filtering accuracy of the high frequency signal can be improved.

Application Example 2
The high frequency device 250 shown in FIG. 8 is of a type driven by applying a high frequency magnetic field from the high frequency signal line 103 to the second ferromagnetic layer 101B, but the high frequency device is not limited to this type. . FIG. 9 shows an example of the circuit of the high frequency device 260 of the type to be driven by applying a high frequency current flowing through the high frequency signal line to the magnetoresistive element 101 as described above as the second embodiment. In the application example 2, the magnetic member (first magnetic member 102) described above as the second embodiment is applied. The same components as those of the high frequency device 250 shown in FIG. 8 described above are denoted by the same reference numerals. Any of the configurations of the magnetic members (the first magnetic member 102 or the second magnetic member 116) described above as the first modification and the third to sixth embodiments of the first embodiment may be applied. The same applies to application examples 3 to 5 described later.

  The high frequency device 260 includes a magnetoresistive effect element 101, a first magnetic member (magnetic field application mechanism) 102, a DC application terminal 119, an input signal line 128, and an output signal line 129. The input signal line 128 and the output signal line 129 correspond to the high frequency signal lines 111 and 112 shown in FIG. 3, respectively. The input signal line 128 is a wire between the first port 120 and the upper electrode 109, and the output signal line 129 is a wire between the second port 121 and the lower electrode 110.

  The high frequency device 260 receives a signal from the first port 120 and outputs a signal from the second port 121. In the high frequency device 260 shown in FIG. 9, the magnetization of the second ferromagnetic layer 101B vibrates due to the spin transfer torque generated by flowing a high frequency current in the stacking direction L of the magnetoresistive effect element 101. If the input high frequency signal is the same as the ferromagnetic resonance frequency of the second ferromagnetic layer 101 B (in this case, also referred to as the spin torque resonance frequency of the magnetoresistive effect element 101), the magnetization of the second ferromagnetic layer 101 B is It vibrates greatly. By periodically vibrating the magnetization of the second ferromagnetic layer 101B, the resistance value of the magnetoresistive effect element 101 changes periodically.

  As shown in FIG. 9, when applying a direct current or a direct voltage from the direct current application terminal 119 so that a direct current flows from the magnetization free layer toward the magnetization fixed layer in the magnetoresistive element 101, The resistance value of the resistance effect element 101 periodically changes in the same phase as the high frequency current. Therefore, as the variation of the resistance value of the magnetoresistive effect element 101 is larger, a larger output signal (output power) can be obtained from the second port 121.

  That is, when the frequency of the high frequency signal input from the first port 120 is a frequency close to the ferromagnetic resonance frequency of the second ferromagnetic layer 101B, the amount of fluctuation of the resistance value of the magnetoresistance effect element 101 is large. , And a large signal is output from the second port 121. On the other hand, when the frequency of the high frequency signal deviates from the ferromagnetic resonance frequency of the second ferromagnetic layer 101B, the amount of fluctuation of the resistance value of the magnetoresistance effect element 101 is small, and most of the signal from the second port 121 is Not output That is, the high frequency device 260 can also function as a high frequency filter for selectively passing a high frequency signal of a specific frequency.

  When a direct current or a direct current voltage is applied from the direct current application terminal 119 so that a direct current flows in the direction from the magnetization fixed layer to the magnetization free layer in the magnetoresistive effect element 101, The resistance value periodically changes at a phase shifted by 180 ° from the high frequency current. In this case, the output signal (output power) from the second port 121 can be made smaller as the variation of the resistance value of the magnetoresistive effect element 101 is larger. In this case, the high frequency device 260 can function as a high frequency filter that selectively cuts off a high frequency signal of a specific frequency.

Application Example 3
For example, as shown in FIG. 10, the high frequency signal line 130 connected to the first port 120 and the reference potential terminal 123 may double as the lower electrode 110 or the upper electrode 109 connected to the magnetoresistance effect element 101. . FIG. 10 is a schematic view of a high frequency device 270 in which the high frequency signal line 130 doubles as the upper electrode 109 connected to the magnetoresistance effect element 101. In this case, the second ferromagnetic layer 101B is generated by utilizing the high frequency magnetic field generated from the high frequency signal line 130 and applied to the magnetoresistance effect element 101 (the second ferromagnetic layer 101B) by the high frequency current flowing in the high frequency signal line 130. Can be oscillated. Alternatively, the magnetization of the second ferromagnetic layer 101B may be oscillated using spin transfer torque generated by a high frequency current applied from the high frequency signal line 130 and flowing in the stacking direction L of the magnetoresistive effect element 101. In addition, even if the magnetization of the second ferromagnetic layer 101B is oscillated by using spin orbit torque due to spin current generated in a direction orthogonal to the flowing direction of the high frequency current flowing through the portion corresponding to the upper electrode of the high frequency signal line 130. Good. That is, the magnetization of the second ferromagnetic layer 101B can be oscillated using at least one of the high frequency magnetic field, the spin transfer torque, and the spin orbit torque.

  In the first to third applications, the DC application terminal 119 may be connected between the inductor 125 and the ground G, or may be connected between the upper electrode 109 and the ground G.

  Also, in place of the inductor 125 in the above-described application examples 1 to 3, a resistive element may be used. The resistance element has a function of cutting high frequency components of the current by the resistance component. This resistance element may be either a chip resistance or a resistance due to a patterned line. The resistance value of this resistance element is preferably equal to or greater than the characteristic impedance of the output signal lines 122 and 129. For example, when the characteristic impedance of the output signal lines 122 and 129 is 50Ω and the resistance value of the resistive element is 50Ω, high frequency power of 45% can be cut by the resistive element. When the characteristic impedance of the output signal lines 122 and 129 is 50Ω and the resistance value of the resistor is 500Ω, high frequency power of 90% can be cut by the resistor. Even in this case, the output signal output from the magnetoresistive effect element 101 can be efficiently flowed to the second port 121.

  In the first to third applications, when the power supply 127 connected to the DC application terminal 119 has a function of cutting the high frequency component of the current and passing the invariant component of the current, the inductor 125 may be omitted. Even in this case, the output signal output from the magnetoresistive effect element 101 can be efficiently flowed to the second port 121.

Application Example 4
Although the case where the magnetoresistive device of the present invention is used as a filter has been described above, in the magnetoresistive device of the present invention, vibration is caused in the magnetization of the magnetization free layer by applying a direct current to the magnetoresistive device. The present invention can also be applied to an oscillator utilizing the generated spin torque oscillation effect. FIG. 11 is a view showing a configuration example of a circuit of a high frequency device 280 to which the magnetoresistive effect device of the present invention is applied as an oscillator. About the same part as the application examples 1-3, it has shown with the same code | symbol.

  In the high frequency device 280, the magnetization of the second ferromagnetic layer 101B functioning as the magnetization free layer vibrates (oscillates) by the spin torque generated when a direct current is applied to the magnetoresistive effect element 101. At this time, a high frequency voltage corresponding to the ferromagnetic resonance frequency of the second ferromagnetic layer 101 B is generated from the magnetoresistive element 101, and the second port (output port) 121 side connected to the magnetoresistive element 101 is generated. A high frequency current output from the magnetoresistance effect element 101 flows through the high frequency signal line 131. In the example of FIG. 11, the inductor 125 is connected to the line 132 on the DC input terminal 119 side, and the capacitor 133 is connected to the high frequency signal line 131.

Application Example 5
The magnetoresistance effect device of the present invention is also applicable to a rectifier or a detector using a spin torque diode effect that generates a DC voltage when a high frequency current (AC current) is applied to the magnetoresistance effect element. FIG. 12 is a diagram showing a configuration example of a circuit of a high frequency device 290 to which the magnetoresistive device of the present invention is applied as a rectifier. About the same part as the application examples 1-3, it has shown with the same code | symbol.

  In the high frequency device 290, an alternating current (high frequency current) is applied to the magnetoresistive element 101 from the first port (input port) 120, and the high frequency signal flows through the high frequency signal line 134 on the first port (input port) 120 side. When a current is applied to the magnetoresistance effect element 101, a DC voltage is generated from the magnetoresistance effect element 101, and the DC voltage is output from the second port (output port) 121 through the line 135. In the example of FIG. 12, the capacitor 133 is connected to the high frequency signal line 134, and the inductor 125 is connected to the line 135.

100, 150, 200, 210, 220, 230, 240 ... magnetoresistance effect device 101 ... magnetoresistance effect element 102 ... first magnetic member 103 ... high frequency signal line 104 ... base 105 ··· Protrusions 105A · · · Tip 105B · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · 107 114 ... part 115 ... step part 116 ... second magnetic member 117 ... base 118 ... second projection 119 ... DC application terminal 120 ... first port 121 ... ··· Second port 122 ··· Output signal line 123, 126 ··· Reference potential terminal 124 ··· Line 125 ··· Inductor 127 · Power supply 128 · · · Input signal line 129 · · · Output signal lines 130,131,134 ... high-frequency signal transmission line 132, 135 ... line 133 ... capacitor 250,260,270,280,290 ... high frequency devices _{D, D} 1, _D 2 ··· projecting direction d · · · distance L · · · stacking direction S · · · surface _{S 1, S} 2 ··· region

Claims (8)

A magnetoresistive effect element formed by laminating such that a spacer layer is disposed between the first ferromagnetic layer and the second ferromagnetic layer;
A first magnetic member disposed on one side of the magnetoresistive element in a direction parallel to the stacking direction and having a first protrusion on the magnetoresistive element side in a direction parallel to the stacking direction;
And a high frequency signal line disposed closer to the magnetoresistive element than the first protrusion in the direction parallel to the stacking direction.
The area of a region where the first projecting portion overlaps a plane perpendicular to the direction parallel to the stacking direction is smaller at the front end of the first projecting portion than at the rear end,
The high frequency current output from the magnetoresistive element is applied such that at least one of the high frequency current flowing through the high frequency signal line and the magnetic field generated from the high frequency signal line is applied to the magnetoresistive element. A magnetoresistive effect device configured to flow to a high frequency signal line.   The magnetoresistive device according to claim 1, further comprising a coil wound around the first protrusion.   The magnetoresistance effect device according to any one of claims 1 and 2, wherein the area monotonously decreases toward the tip of the first protrusion.   The magnetoresistance effect device according to any one of claims 1 to 3, wherein the first projecting portion has a multistage structure in which a plurality of portions are stacked in a projecting direction.   The magnetoresistance effect device according to claim 4, wherein the taper angle of the portion is different in each step.   5. The coil according to claim 4, wherein the coil includes a layer of spiral coil, and the layer of spiral coil is wound around at least two of the plurality of stacked parts. 5. The magnetoresistive device according to any one of 5.   The magnetoresistive effect device according to any one of claims 1 to 6, wherein a second magnetic member is disposed on the other side of the magnetoresistive effect element in the direction parallel to the stacking direction. .   The area of the region where the second magnetic member has a second protrusion on the side of the magnetoresistive element and the second protrusion overlaps a plane perpendicular to the direction parallel to the stacking direction is the second protrusion The magnetoresistance effect device according to claim 7, wherein the front end of the portion is smaller than the rear end.

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