JP6433101B2 - 分子終端シリコンナノ粒子を利用した複合型太陽電池 - Google Patents
分子終端シリコンナノ粒子を利用した複合型太陽電池 Download PDFInfo
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- 239000005543 nano-size silicon particle Substances 0.000 title claims description 58
- 239000002131 composite material Substances 0.000 title claims description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 84
- 229910052710 silicon Inorganic materials 0.000 claims description 84
- 239000010703 silicon Substances 0.000 claims description 84
- 239000002070 nanowire Substances 0.000 claims description 19
- 239000000758 substrate Substances 0.000 claims description 19
- 239000011159 matrix material Substances 0.000 claims description 13
- 238000012546 transfer Methods 0.000 claims description 13
- 239000004065 semiconductor Substances 0.000 claims description 7
- 239000004215 Carbon black (E152) Substances 0.000 claims description 4
- 150000001335 aliphatic alkanes Chemical class 0.000 claims description 4
- 150000001336 alkenes Chemical class 0.000 claims description 4
- 229930195733 hydrocarbon Natural products 0.000 claims description 4
- 150000002430 hydrocarbons Chemical class 0.000 claims description 4
- 230000005611 electricity Effects 0.000 claims description 3
- 238000006243 chemical reaction Methods 0.000 description 31
- CCCMONHAUSKTEQ-UHFFFAOYSA-N octadec-1-ene Chemical compound CCCCCCCCCCCCCCCCC=C CCCMONHAUSKTEQ-UHFFFAOYSA-N 0.000 description 28
- 239000011856 silicon-based particle Substances 0.000 description 11
- 238000010521 absorption reaction Methods 0.000 description 8
- 239000000969 carrier Substances 0.000 description 8
- 239000000463 material Substances 0.000 description 7
- 239000002105 nanoparticle Substances 0.000 description 7
- 230000007547 defect Effects 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 238000005530 etching Methods 0.000 description 5
- 238000005259 measurement Methods 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 230000006798 recombination Effects 0.000 description 4
- 238000005215 recombination Methods 0.000 description 4
- 238000005033 Fourier transform infrared spectroscopy Methods 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 238000005424 photoluminescence Methods 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- 238000001878 scanning electron micrograph Methods 0.000 description 3
- 238000001228 spectrum Methods 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 230000002776 aggregation Effects 0.000 description 2
- 238000004220 aggregation Methods 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 230000003915 cell function Effects 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000000024 high-resolution transmission electron micrograph Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 230000031700 light absorption Effects 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- SQGYOTSLMSWVJD-UHFFFAOYSA-N silver(1+) nitrate Chemical compound [Ag+].[O-]N(=O)=O SQGYOTSLMSWVJD-UHFFFAOYSA-N 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 238000005211 surface analysis Methods 0.000 description 2
- LIKMAJRDDDTEIG-UHFFFAOYSA-N 1-hexene Chemical compound CCCCC=C LIKMAJRDDDTEIG-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 1
- 239000011358 absorbing material Substances 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000005587 bubbling Effects 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 239000013626 chemical specie Substances 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000007872 degassing Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 238000000608 laser ablation Methods 0.000 description 1
- 125000000325 methylidene group Chemical group [H]C([H])=* 0.000 description 1
- 238000001000 micrograph Methods 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- YWAKXRMUMFPDSH-UHFFFAOYSA-N pentene Chemical compound CCCC=C YWAKXRMUMFPDSH-UHFFFAOYSA-N 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 229910001961 silver nitrate Inorganic materials 0.000 description 1
- 241000894007 species Species 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000001988 toxicity Effects 0.000 description 1
- 231100000419 toxicity Toxicity 0.000 description 1
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- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
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- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
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- C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic System
- C07F7/02—Silicon compounds
- C07F7/08—Compounds having one or more C—Si linkages
- C07F7/0803—Compounds with Si-C or Si-Si linkages
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- H01L31/035227—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures the quantum structure being quantum wires, or nanorods
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- H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
- H01L31/055—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means where light is absorbed and re-emitted at a different wavelength by the optical element directly associated or integrated with the PV cell, e.g. by using luminescent material, fluorescent concentrators or up-conversion arrangements
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- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
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- H—ELECTRICITY
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- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
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- Y02E10/52—PV systems with concentrators
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- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
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Description
ここで、前記炭化水素はアルケンまたはアルカンであってよい。
また、前記pn接合太陽電池はシリコンpn接合太陽電池であってよい。
また、前記半導体はシリコン基板上に設けられたシリコンナノワイヤを含んでよい。
また、前記シリコンナノワイヤはシリコンマトリクス中に埋め込まれ、前記半導体の最表面は前記シリコンマトリクスの表面であってよい。
2 表面電極
3 p型シリコンマトリクス
4 n型シリコンナノワイヤ
5 シリコン基板
6 裏面電極
Claims (5)
- 可視光域の少なくとも一部の照射光を電気に変換するpn接合太陽電池を形成する半導体の最表面にシリコンナノ粒子を設け、
前記シリコンナノ粒子の少なくとも一部は直径が5nm以下であるとともに、その表面は酸化されておらず、且つ分子長が5nm以下の炭化水素により終端されており、
前記シリコンナノ粒子は照射された紫外線を吸収して前記太陽電池へのエネルギー移動を行う複合型太陽電池。 - 前記炭化水素はアルケンまたはアルカンである、請求項1に記載の複合型太陽電池。
- 前記pn接合太陽電池はシリコンpn接合太陽電池である、請求項1または2に記載の複合型太陽電池。
- 前記半導体はシリコン基板上に設けられたシリコンナノワイヤを含む、請求項3に記載の複合型太陽電池。
- 前記シリコンナノワイヤはシリコンマトリクス中に埋め込まれ、前記半導体の最表面は前記シリコンマトリクスの表面である、請求項4に記載の複合型太陽電池。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
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JP2015103575 | 2015-05-21 | ||
JP2015103575 | 2015-05-21 | ||
PCT/JP2016/064037 WO2016185978A1 (ja) | 2015-05-21 | 2016-05-11 | 分子終端シリコンナノ粒子を利用した複合型太陽電池 |
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JPWO2016185978A1 JPWO2016185978A1 (ja) | 2018-02-22 |
JP6433101B2 true JP6433101B2 (ja) | 2018-12-05 |
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US (1) | US20180122961A1 (ja) |
EP (1) | EP3293773A4 (ja) |
JP (1) | JP6433101B2 (ja) |
WO (1) | WO2016185978A1 (ja) |
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CN112752616B (zh) | 2018-08-01 | 2023-07-14 | 株式会社尼康 | 雾发生装置以及雾成膜方法和雾成膜装置 |
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JP2012099650A (ja) * | 2010-11-02 | 2012-05-24 | Bridgestone Corp | 太陽電池モジュールの製造方法及び太陽電池モジュール |
JP2013016787A (ja) * | 2011-06-08 | 2013-01-24 | Nissan Motor Co Ltd | 太陽電池およびその製造方法 |
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2016
- 2016-05-11 JP JP2017519155A patent/JP6433101B2/ja active Active
- 2016-05-11 EP EP16796371.9A patent/EP3293773A4/en not_active Ceased
- 2016-05-11 US US15/575,764 patent/US20180122961A1/en not_active Abandoned
- 2016-05-11 WO PCT/JP2016/064037 patent/WO2016185978A1/ja active Application Filing
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JPWO2016185978A1 (ja) | 2018-02-22 |
EP3293773A1 (en) | 2018-03-14 |
WO2016185978A1 (ja) | 2016-11-24 |
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EP3293773A4 (en) | 2018-12-05 |
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