JP6424840B2 - Process for producing 1,2-bissilylethylene compound - Google Patents
Process for producing 1,2-bissilylethylene compound Download PDFInfo
- Publication number
- JP6424840B2 JP6424840B2 JP2016003554A JP2016003554A JP6424840B2 JP 6424840 B2 JP6424840 B2 JP 6424840B2 JP 2016003554 A JP2016003554 A JP 2016003554A JP 2016003554 A JP2016003554 A JP 2016003554A JP 6424840 B2 JP6424840 B2 JP 6424840B2
- Authority
- JP
- Japan
- Prior art keywords
- compound
- bis
- bissilylethylene
- reaction
- producing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- -1 1,2-bissilylethylene compound Chemical class 0.000 title claims description 72
- 238000000034 method Methods 0.000 title claims description 22
- 238000006243 chemical reaction Methods 0.000 claims description 59
- 239000003054 catalyst Substances 0.000 claims description 44
- 238000010992 reflux Methods 0.000 claims description 36
- 239000002904 solvent Substances 0.000 claims description 31
- 150000001875 compounds Chemical class 0.000 claims description 30
- 238000004519 manufacturing process Methods 0.000 claims description 28
- FWDBOZPQNFPOLF-UHFFFAOYSA-N ethenyl(triethoxy)silane Chemical compound CCO[Si](OCC)(OCC)C=C FWDBOZPQNFPOLF-UHFFFAOYSA-N 0.000 claims description 23
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 16
- 229910052707 ruthenium Inorganic materials 0.000 claims description 16
- 239000000203 mixture Substances 0.000 claims description 11
- NKSJNEHGWDZZQF-UHFFFAOYSA-N ethenyl(trimethoxy)silane Chemical compound CO[Si](OC)(OC)C=C NKSJNEHGWDZZQF-UHFFFAOYSA-N 0.000 claims description 7
- 150000002430 hydrocarbons Chemical group 0.000 claims description 7
- 239000003963 antioxidant agent Substances 0.000 claims description 5
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Natural products P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 claims description 4
- 230000003078 antioxidant effect Effects 0.000 claims description 4
- 125000004432 carbon atom Chemical group C* 0.000 claims description 4
- 238000007872 degassing Methods 0.000 claims description 4
- 229910000073 phosphorus hydride Inorganic materials 0.000 claims description 4
- 150000001335 aliphatic alkanes Chemical class 0.000 claims description 3
- 125000000962 organic group Chemical group 0.000 claims description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 18
- BTLPDSCJUZOEJB-BUHFOSPRSA-N triethoxy-[(e)-2-triethoxysilylethenyl]silane Chemical group CCO[Si](OCC)(OCC)\C=C\[Si](OCC)(OCC)OCC BTLPDSCJUZOEJB-BUHFOSPRSA-N 0.000 description 17
- CPUDPFPXCZDNGI-UHFFFAOYSA-N triethoxy(methyl)silane Chemical compound CCO[Si](C)(OCC)OCC CPUDPFPXCZDNGI-UHFFFAOYSA-N 0.000 description 15
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 9
- 239000011521 glass Substances 0.000 description 9
- 229910052757 nitrogen Inorganic materials 0.000 description 9
- CIWBSHSKHKDKBQ-JLAZNSOCSA-N Ascorbic acid Chemical compound OC[C@H](O)[C@H]1OC(=O)C(O)=C1O CIWBSHSKHKDKBQ-JLAZNSOCSA-N 0.000 description 8
- 239000012295 chemical reaction liquid Substances 0.000 description 8
- 239000011259 mixed solution Substances 0.000 description 7
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 6
- 239000005977 Ethylene Substances 0.000 description 6
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 6
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- BFXIKLCIZHOAAZ-UHFFFAOYSA-N methyltrimethoxysilane Chemical class CO[Si](C)(OC)OC BFXIKLCIZHOAAZ-UHFFFAOYSA-N 0.000 description 5
- WLPUWLXVBWGYMZ-UHFFFAOYSA-N tricyclohexylphosphine Chemical compound C1CCCCC1P(C1CCCCC1)C1CCCCC1 WLPUWLXVBWGYMZ-UHFFFAOYSA-N 0.000 description 5
- PKBZOGROOQFGOE-UHFFFAOYSA-N trimethoxy(2-trimethoxysilylethenyl)silane Chemical group CO[Si](OC)(OC)C=C[Si](OC)(OC)OC PKBZOGROOQFGOE-UHFFFAOYSA-N 0.000 description 5
- 239000002211 L-ascorbic acid Substances 0.000 description 4
- 235000000069 L-ascorbic acid Nutrition 0.000 description 4
- XBUPQSQOUULRNZ-UHFFFAOYSA-L [Ru](Cl)Cl.C1(=CC=CC=C1)C1=CC(C2=CC=CC=C12)(P(C1CCCCC1)(C1CCCCC1)C1CCCCC1)P(C1CCCCC1)(C1CCCCC1)C1CCCCC1 Chemical compound [Ru](Cl)Cl.C1(=CC=CC=C1)C1=CC(C2=CC=CC=C12)(P(C1CCCCC1)(C1CCCCC1)C1CCCCC1)P(C1CCCCC1)(C1CCCCC1)C1CCCCC1 XBUPQSQOUULRNZ-UHFFFAOYSA-L 0.000 description 4
- 235000006708 antioxidants Nutrition 0.000 description 4
- 229960005070 ascorbic acid Drugs 0.000 description 4
- 239000002994 raw material Substances 0.000 description 4
- RIOQSEWOXXDEQQ-UHFFFAOYSA-N triphenylphosphine Chemical compound C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 RIOQSEWOXXDEQQ-UHFFFAOYSA-N 0.000 description 4
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 3
- 238000009835 boiling Methods 0.000 description 3
- 239000003426 co-catalyst Substances 0.000 description 3
- NUFVQEIPPHHQCK-UHFFFAOYSA-N ethenyl-methoxy-dimethylsilane Chemical group CO[Si](C)(C)C=C NUFVQEIPPHHQCK-UHFFFAOYSA-N 0.000 description 3
- 239000002608 ionic liquid Substances 0.000 description 3
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- 230000035484 reaction time Effects 0.000 description 3
- 230000009257 reactivity Effects 0.000 description 3
- LSMWOQFDLBIYPM-UHFFFAOYSA-N 1,3-bis(2,4,6-trimethylphenyl)-4,5-dihydro-2h-imidazol-1-ium-2-ide Chemical group CC1=CC(C)=CC(C)=C1N1[C-]=[N+](C=2C(=CC(C)=CC=2C)C)CC1 LSMWOQFDLBIYPM-UHFFFAOYSA-N 0.000 description 2
- KJEXJILVTOOZSZ-UHFFFAOYSA-N 2-silylethenylsilane Chemical group [SiH3]C=C[SiH3] KJEXJILVTOOZSZ-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 125000000217 alkyl group Chemical group 0.000 description 2
- QHORRKSZGBYGPH-UHFFFAOYSA-L benzylidene(dichloro)ruthenium Chemical compound Cl[Ru](Cl)=CC1=CC=CC=C1 QHORRKSZGBYGPH-UHFFFAOYSA-L 0.000 description 2
- PNPBGYBHLCEVMK-UHFFFAOYSA-L benzylidene(dichloro)ruthenium;tricyclohexylphosphane Chemical compound Cl[Ru](Cl)=CC1=CC=CC=C1.C1CCCCC1P(C1CCCCC1)C1CCCCC1.C1CCCCC1P(C1CCCCC1)C1CCCCC1 PNPBGYBHLCEVMK-UHFFFAOYSA-L 0.000 description 2
- 238000006555 catalytic reaction Methods 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- JJQZDUKDJDQPMQ-UHFFFAOYSA-N dimethoxy(dimethyl)silane Chemical compound CO[Si](C)(C)OC JJQZDUKDJDQPMQ-UHFFFAOYSA-N 0.000 description 2
- SWLVAJXQIOKFSJ-UHFFFAOYSA-N dimethyl(diphenoxy)silane Chemical compound C=1C=CC=CC=1O[Si](C)(C)OC1=CC=CC=C1 SWLVAJXQIOKFSJ-UHFFFAOYSA-N 0.000 description 2
- YYLGKUPAFFKGRQ-UHFFFAOYSA-N dimethyldiethoxysilane Chemical compound CCO[Si](C)(C)OCC YYLGKUPAFFKGRQ-UHFFFAOYSA-N 0.000 description 2
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 2
- 125000004108 n-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- LFQCEHFDDXELDD-UHFFFAOYSA-N tetramethyl orthosilicate Chemical compound CO[Si](OC)(OC)OC LFQCEHFDDXELDD-UHFFFAOYSA-N 0.000 description 2
- YFNYCSJNUJQGNF-UHFFFAOYSA-N triethoxy(1-triethoxysilylethenyl)silane Chemical group CCO[Si](OCC)(OCC)C(=C)[Si](OCC)(OCC)OCC YFNYCSJNUJQGNF-UHFFFAOYSA-N 0.000 description 2
- QQQSFSZALRVCSZ-UHFFFAOYSA-N triethoxysilane Chemical compound CCO[SiH](OCC)OCC QQQSFSZALRVCSZ-UHFFFAOYSA-N 0.000 description 2
- NMEPHPOFYLLFTK-UHFFFAOYSA-N trimethoxy(octyl)silane Chemical compound CCCCCCCC[Si](OC)(OC)OC NMEPHPOFYLLFTK-UHFFFAOYSA-N 0.000 description 2
- OJAJJFGMKAZGRZ-UHFFFAOYSA-N trimethyl(phenoxy)silane Chemical compound C[Si](C)(C)OC1=CC=CC=C1 OJAJJFGMKAZGRZ-UHFFFAOYSA-N 0.000 description 2
- BWHDROKFUHTORW-UHFFFAOYSA-N tritert-butylphosphane Chemical compound CC(C)(C)P(C(C)(C)C)C(C)(C)C BWHDROKFUHTORW-UHFFFAOYSA-N 0.000 description 2
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 2
- 229920002554 vinyl polymer Polymers 0.000 description 2
- GVJHHUAWPYXKBD-IEOSBIPESA-N α-tocopherol Chemical compound OC1=C(C)C(C)=C2O[C@@](CCC[C@H](C)CCC[C@H](C)CCCC(C)C)(C)CCC2=C1C GVJHHUAWPYXKBD-IEOSBIPESA-N 0.000 description 2
- CHHWNYBAWJMTRY-UHFFFAOYSA-N 1,2,2-tributoxyethenylsilane Chemical compound CCCCOC([SiH3])=C(OCCCC)OCCCC CHHWNYBAWJMTRY-UHFFFAOYSA-N 0.000 description 1
- VIGBBJCVHVKSRE-UHFFFAOYSA-N 1,2,2-tripropoxyethenylsilane Chemical compound C(CC)OC(=C(OCCC)OCCC)[SiH3] VIGBBJCVHVKSRE-UHFFFAOYSA-N 0.000 description 1
- KGRVJHAUYBGFFP-UHFFFAOYSA-N 2,2'-Methylenebis(4-methyl-6-tert-butylphenol) Chemical compound CC(C)(C)C1=CC(C)=CC(CC=2C(=C(C=C(C)C=2)C(C)(C)C)O)=C1O KGRVJHAUYBGFFP-UHFFFAOYSA-N 0.000 description 1
- UCMZDKNUMKBJAA-UHFFFAOYSA-N 2,2-diethoxyethenyl(methyl)silane Chemical compound C[SiH2]C=C(OCC)OCC UCMZDKNUMKBJAA-UHFFFAOYSA-N 0.000 description 1
- ZEQZEDMQGNNIKJ-UHFFFAOYSA-N 2,2-dimethoxyethenyl(methyl)silane Chemical compound C[SiH2]C=C(OC)OC ZEQZEDMQGNNIKJ-UHFFFAOYSA-N 0.000 description 1
- HITBDIPWYKTHIH-UHFFFAOYSA-N 2-[diethoxy(methyl)silyl]ethyl-diethoxy-methylsilane Chemical compound CCO[Si](C)(OCC)CC[Si](C)(OCC)OCC HITBDIPWYKTHIH-UHFFFAOYSA-N 0.000 description 1
- AQBOJLLHSQIRGF-UHFFFAOYSA-N 2-ethoxyethenyl(diethyl)silane Chemical compound C(C)[SiH](C=COCC)CC AQBOJLLHSQIRGF-UHFFFAOYSA-N 0.000 description 1
- IDYHGSXNTVTKAC-UHFFFAOYSA-N 2-methoxyethenyl(dimethyl)silane Chemical compound COC=C[SiH](C)C IDYHGSXNTVTKAC-UHFFFAOYSA-N 0.000 description 1
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical group [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 description 1
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 1
- NLZUEZXRPGMBCV-UHFFFAOYSA-N Butylhydroxytoluene Chemical compound CC1=CC(C(C)(C)C)=C(O)C(C(C)(C)C)=C1 NLZUEZXRPGMBCV-UHFFFAOYSA-N 0.000 description 1
- ZFVJYIKPOGROLI-UHFFFAOYSA-N C(C)[SiH2]C=C(OC)OC Chemical compound C(C)[SiH2]C=C(OC)OC ZFVJYIKPOGROLI-UHFFFAOYSA-N 0.000 description 1
- FPQVLXLGOUSIAI-UHFFFAOYSA-N C(C)[SiH2]C=C(OC1=CC=CC=C1)OC1=CC=CC=C1 Chemical compound C(C)[SiH2]C=C(OC1=CC=CC=C1)OC1=CC=CC=C1 FPQVLXLGOUSIAI-UHFFFAOYSA-N 0.000 description 1
- PNHFJYUTTYKJTR-UHFFFAOYSA-N C(C)[SiH2]C=C(OCC)OCC Chemical compound C(C)[SiH2]C=C(OCC)OCC PNHFJYUTTYKJTR-UHFFFAOYSA-N 0.000 description 1
- VONYMJJKWFJJBX-UHFFFAOYSA-N C(C)[SiH](C=COC1=CC=CC=C1)CC Chemical compound C(C)[SiH](C=COC1=CC=CC=C1)CC VONYMJJKWFJJBX-UHFFFAOYSA-N 0.000 description 1
- SRGQGMHLYIWBHD-UHFFFAOYSA-N C(C)[Si](C=C[Si](OC1=CC=CC=C1)(OC1=CC=CC=C1)CC)(OC1=CC=CC=C1)OC1=CC=CC=C1 Chemical group C(C)[Si](C=C[Si](OC1=CC=CC=C1)(OC1=CC=CC=C1)CC)(OC1=CC=CC=C1)OC1=CC=CC=C1 SRGQGMHLYIWBHD-UHFFFAOYSA-N 0.000 description 1
- VWMKUZYJGUVNJX-UHFFFAOYSA-L C(C1=CC=CC=C1)=[Ru](Cl)Cl.C1(=C(C(=CC(=C1)C)C)N1C(N(CC1)C1=C(C=C(C=C1C)C)C)=C1C(CCCC1)P(C1CCCCC1)C1CCCCC1)C Chemical compound C(C1=CC=CC=C1)=[Ru](Cl)Cl.C1(=C(C(=CC(=C1)C)C)N1C(N(CC1)C1=C(C=C(C=C1C)C)C)=C1C(CCCC1)P(C1CCCCC1)C1CCCCC1)C VWMKUZYJGUVNJX-UHFFFAOYSA-L 0.000 description 1
- JRFLIQRMPTYDIA-UHFFFAOYSA-N C(CCCCCCCCCC)[Si](C)(C)OCC Chemical compound C(CCCCCCCCCC)[Si](C)(C)OCC JRFLIQRMPTYDIA-UHFFFAOYSA-N 0.000 description 1
- DKXLVCUSJPSIPA-UHFFFAOYSA-N C[SiH2]C=C(OC1=CC=CC=C1)OC1=CC=CC=C1 Chemical compound C[SiH2]C=C(OC1=CC=CC=C1)OC1=CC=CC=C1 DKXLVCUSJPSIPA-UHFFFAOYSA-N 0.000 description 1
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- 239000012327 Ruthenium complex Substances 0.000 description 1
- 239000006087 Silane Coupling Agent Substances 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 125000003342 alkenyl group Chemical group 0.000 description 1
- 125000005370 alkoxysilyl group Chemical group 0.000 description 1
- 229940087168 alpha tocopherol Drugs 0.000 description 1
- 125000003277 amino group Chemical group 0.000 description 1
- 125000003710 aryl alkyl group Chemical group 0.000 description 1
- 125000003118 aryl group Chemical group 0.000 description 1
- 125000001797 benzyl group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C([H])([H])* 0.000 description 1
- MQTZSGCSKOZKGU-UHFFFAOYSA-L benzylidene(dichloro)ruthenium;tricyclohexylphosphane Chemical compound Cl[Ru](Cl)=CC1=CC=CC=C1.C1CCCCC1P(C1CCCCC1)C1CCCCC1 MQTZSGCSKOZKGU-UHFFFAOYSA-L 0.000 description 1
- PNPBGYBHLCEVMK-UHFFFAOYSA-N benzylidene(dichloro)ruthenium;tricyclohexylphosphanium Chemical compound Cl[Ru](Cl)=CC1=CC=CC=C1.C1CCCCC1[PH+](C1CCCCC1)C1CCCCC1.C1CCCCC1[PH+](C1CCCCC1)C1CCCCC1 PNPBGYBHLCEVMK-UHFFFAOYSA-N 0.000 description 1
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 1
- 229910052794 bromium Inorganic materials 0.000 description 1
- ITLXZBKZFOJXSP-UHFFFAOYSA-N butan-2-yl-ethoxy-dimethylsilane Chemical compound CCO[Si](C)(C)C(C)CC ITLXZBKZFOJXSP-UHFFFAOYSA-N 0.000 description 1
- PZIMKLIAAVDULZ-UHFFFAOYSA-N butan-2-yl-methoxy-dimethylsilane Chemical compound CCC(C)[Si](C)(C)OC PZIMKLIAAVDULZ-UHFFFAOYSA-N 0.000 description 1
- HVCBWAHRVCPLEM-UHFFFAOYSA-N butoxy(triethyl)silane Chemical compound CCCCO[Si](CC)(CC)CC HVCBWAHRVCPLEM-UHFFFAOYSA-N 0.000 description 1
- YTJUXOIAXOQWBV-UHFFFAOYSA-N butoxy(trimethyl)silane Chemical compound CCCCO[Si](C)(C)C YTJUXOIAXOQWBV-UHFFFAOYSA-N 0.000 description 1
- XGZGKDQVCBHSGI-UHFFFAOYSA-N butyl(triethoxy)silane Chemical compound CCCC[Si](OCC)(OCC)OCC XGZGKDQVCBHSGI-UHFFFAOYSA-N 0.000 description 1
- DCEFJHOMYGZUCQ-UHFFFAOYSA-N butyl-ethoxy-dimethylsilane Chemical compound CCCC[Si](C)(C)OCC DCEFJHOMYGZUCQ-UHFFFAOYSA-N 0.000 description 1
- VNVRPYPOLKSSCA-UHFFFAOYSA-N butyl-methoxy-dimethylsilane Chemical compound CCCC[Si](C)(C)OC VNVRPYPOLKSSCA-UHFFFAOYSA-N 0.000 description 1
- 230000003197 catalytic effect Effects 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229940125904 compound 1 Drugs 0.000 description 1
- 229940125782 compound 2 Drugs 0.000 description 1
- 125000004093 cyano group Chemical group *C#N 0.000 description 1
- 125000000113 cyclohexyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])(*)C([H])([H])C1([H])[H] 0.000 description 1
- ZXKWUYWWVSKKQZ-UHFFFAOYSA-N cyclohexyl(diphenyl)phosphane Chemical compound C1CCCCC1P(C=1C=CC=CC=1)C1=CC=CC=C1 ZXKWUYWWVSKKQZ-UHFFFAOYSA-N 0.000 description 1
- 125000001511 cyclopentyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])(*)C1([H])[H] 0.000 description 1
- 230000009849 deactivation Effects 0.000 description 1
- BAAAEEDPKUHLID-UHFFFAOYSA-N decyl(triethoxy)silane Chemical compound CCCCCCCCCC[Si](OCC)(OCC)OCC BAAAEEDPKUHLID-UHFFFAOYSA-N 0.000 description 1
- KQAHMVLQCSALSX-UHFFFAOYSA-N decyl(trimethoxy)silane Chemical compound CCCCCCCCCC[Si](OC)(OC)OC KQAHMVLQCSALSX-UHFFFAOYSA-N 0.000 description 1
- XRKOMNJDUGQWJC-UHFFFAOYSA-N decyl-ethoxy-dimethylsilane Chemical compound CCCCCCCCCC[Si](C)(C)OCC XRKOMNJDUGQWJC-UHFFFAOYSA-N 0.000 description 1
- IKIVNCRFEYCANR-UHFFFAOYSA-N decyl-methoxy-dimethylsilane Chemical compound CCCCCCCCCC[Si](C)(C)OC IKIVNCRFEYCANR-UHFFFAOYSA-N 0.000 description 1
- GQNWJCQWBFHQAO-UHFFFAOYSA-N dibutoxy(dimethyl)silane Chemical compound CCCCO[Si](C)(C)OCCCC GQNWJCQWBFHQAO-UHFFFAOYSA-N 0.000 description 1
- DGPFXVBYDAVXLX-UHFFFAOYSA-N dibutyl(diethoxy)silane Chemical compound CCCC[Si](OCC)(OCC)CCCC DGPFXVBYDAVXLX-UHFFFAOYSA-N 0.000 description 1
- YPENMAABQGWRBR-UHFFFAOYSA-N dibutyl(dimethoxy)silane Chemical compound CCCC[Si](OC)(OC)CCCC YPENMAABQGWRBR-UHFFFAOYSA-N 0.000 description 1
- RMKXUYVJJQUSPL-UHFFFAOYSA-L dichloro(3,3-dimethylbut-1-enylidene)ruthenium Chemical compound CC(C)(C)C=C=[Ru](Cl)Cl RMKXUYVJJQUSPL-UHFFFAOYSA-L 0.000 description 1
- CSYMWOCQWBALLE-UHFFFAOYSA-L dichloro(ethoxymethylidene)ruthenium;tricyclohexylphosphane Chemical compound CCOC=[Ru](Cl)Cl.C1CCCCC1P(C1CCCCC1)C1CCCCC1 CSYMWOCQWBALLE-UHFFFAOYSA-L 0.000 description 1
- PAOXUKUJFRPEDY-UHFFFAOYSA-L dichloro(ethoxymethylidene)ruthenium;tricyclohexylphosphane Chemical compound CCOC=[Ru](Cl)Cl.C1CCCCC1P(C1CCCCC1)C1CCCCC1.C1CCCCC1P(C1CCCCC1)C1CCCCC1 PAOXUKUJFRPEDY-UHFFFAOYSA-L 0.000 description 1
- VPLLTGLLUHLIHA-UHFFFAOYSA-N dicyclohexyl(phenyl)phosphane Chemical compound C1CCCCC1P(C=1C=CC=CC=1)C1CCCCC1 VPLLTGLLUHLIHA-UHFFFAOYSA-N 0.000 description 1
- ZMAPKOCENOWQRE-UHFFFAOYSA-N diethoxy(diethyl)silane Chemical compound CCO[Si](CC)(CC)OCC ZMAPKOCENOWQRE-UHFFFAOYSA-N 0.000 description 1
- UDFQIGODCFRNJY-UHFFFAOYSA-N diethoxy(dihexyl)silane Chemical compound CCCCCC[Si](OCC)(OCC)CCCCCC UDFQIGODCFRNJY-UHFFFAOYSA-N 0.000 description 1
- VDXFKFNGIDWIQQ-UHFFFAOYSA-N diethoxy(dipentyl)silane Chemical compound CCCCC[Si](OCC)(OCC)CCCCC VDXFKFNGIDWIQQ-UHFFFAOYSA-N 0.000 description 1
- HZLIIKNXMLEWPA-UHFFFAOYSA-N diethoxy(dipropyl)silane Chemical compound CCC[Si](CCC)(OCC)OCC HZLIIKNXMLEWPA-UHFFFAOYSA-N 0.000 description 1
- WOZOEHNJNZTJDH-UHFFFAOYSA-N diethoxy-bis(2-methylpropyl)silane Chemical compound CCO[Si](CC(C)C)(CC(C)C)OCC WOZOEHNJNZTJDH-UHFFFAOYSA-N 0.000 description 1
- VVKJJEAEVBNODX-UHFFFAOYSA-N diethoxy-di(propan-2-yl)silane Chemical compound CCO[Si](C(C)C)(C(C)C)OCC VVKJJEAEVBNODX-UHFFFAOYSA-N 0.000 description 1
- 125000004177 diethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- NPLSGJHJPAYJFJ-UHFFFAOYSA-N diethyl(2-methoxyethenyl)silane Chemical compound C(C)[SiH](C=COC)CC NPLSGJHJPAYJFJ-UHFFFAOYSA-N 0.000 description 1
- VSYLGGHSEIWGJV-UHFFFAOYSA-N diethyl(dimethoxy)silane Chemical compound CC[Si](CC)(OC)OC VSYLGGHSEIWGJV-UHFFFAOYSA-N 0.000 description 1
- CYICXDQJFWXGTC-UHFFFAOYSA-N dihexyl(dimethoxy)silane Chemical compound CCCCCC[Si](OC)(OC)CCCCCC CYICXDQJFWXGTC-UHFFFAOYSA-N 0.000 description 1
- LXAPXYULCIKKNK-UHFFFAOYSA-N dimethoxy(dipentyl)silane Chemical compound CCCCC[Si](OC)(OC)CCCCC LXAPXYULCIKKNK-UHFFFAOYSA-N 0.000 description 1
- JVUVKQDVTIIMOD-UHFFFAOYSA-N dimethoxy(dipropyl)silane Chemical compound CCC[Si](OC)(OC)CCC JVUVKQDVTIIMOD-UHFFFAOYSA-N 0.000 description 1
- NHYFIJRXGOQNFS-UHFFFAOYSA-N dimethoxy-bis(2-methylpropyl)silane Chemical compound CC(C)C[Si](OC)(CC(C)C)OC NHYFIJRXGOQNFS-UHFFFAOYSA-N 0.000 description 1
- VHPUZTHRFWIGAW-UHFFFAOYSA-N dimethoxy-di(propan-2-yl)silane Chemical compound CO[Si](OC)(C(C)C)C(C)C VHPUZTHRFWIGAW-UHFFFAOYSA-N 0.000 description 1
- CNMKFNVCPOVSIU-UHFFFAOYSA-N dimethoxymethyl-[2-(dimethoxymethylsilyl)ethyl]silane Chemical compound COC(OC)[SiH2]CC[SiH2]C(OC)OC CNMKFNVCPOVSIU-UHFFFAOYSA-N 0.000 description 1
- IJTOKBKBSJVWSU-UHFFFAOYSA-N dimethyl(2-phenoxyethenyl)silane Chemical compound C[SiH](C=COC1=CC=CC=C1)C IJTOKBKBSJVWSU-UHFFFAOYSA-N 0.000 description 1
- ZIDTUTFKRRXWTK-UHFFFAOYSA-N dimethyl(dipropoxy)silane Chemical compound CCCO[Si](C)(C)OCCC ZIDTUTFKRRXWTK-UHFFFAOYSA-N 0.000 description 1
- BPXCAJONOPIXJI-UHFFFAOYSA-N dimethyl-di(propan-2-yloxy)silane Chemical compound CC(C)O[Si](C)(C)OC(C)C BPXCAJONOPIXJI-UHFFFAOYSA-N 0.000 description 1
- AYLOLAANSIXPJA-UHFFFAOYSA-N diphenoxysilicon Chemical compound C=1C=CC=CC=1O[Si]OC1=CC=CC=C1 AYLOLAANSIXPJA-UHFFFAOYSA-N 0.000 description 1
- 238000007323 disproportionation reaction Methods 0.000 description 1
- 238000004821 distillation Methods 0.000 description 1
- YGUFXEJWPRRAEK-UHFFFAOYSA-N dodecyl(triethoxy)silane Chemical compound CCCCCCCCCCCC[Si](OCC)(OCC)OCC YGUFXEJWPRRAEK-UHFFFAOYSA-N 0.000 description 1
- SCPWMSBAGXEGPW-UHFFFAOYSA-N dodecyl(trimethoxy)silane Chemical compound CCCCCCCCCCCC[Si](OC)(OC)OC SCPWMSBAGXEGPW-UHFFFAOYSA-N 0.000 description 1
- AWVANIDDKFHWRE-UHFFFAOYSA-N dodecyl-ethoxy-dimethylsilane Chemical compound CCCCCCCCCCCC[Si](C)(C)OCC AWVANIDDKFHWRE-UHFFFAOYSA-N 0.000 description 1
- ZDULQMIWFCXDOX-UHFFFAOYSA-N dodecyl-methoxy-dimethylsilane Chemical compound CCCCCCCCCCCC[Si](C)(C)OC ZDULQMIWFCXDOX-UHFFFAOYSA-N 0.000 description 1
- FEHYCIQPPPQNMI-UHFFFAOYSA-N ethenyl(triphenoxy)silane Chemical compound C=1C=CC=CC=1O[Si](OC=1C=CC=CC=1)(C=C)OC1=CC=CC=C1 FEHYCIQPPPQNMI-UHFFFAOYSA-N 0.000 description 1
- JEWCZPTVOYXPGG-UHFFFAOYSA-N ethenyl-ethoxy-dimethylsilane Chemical compound CCO[Si](C)(C)C=C JEWCZPTVOYXPGG-UHFFFAOYSA-N 0.000 description 1
- DFJDZTPFNSXNAX-UHFFFAOYSA-N ethoxy(triethyl)silane Chemical compound CCO[Si](CC)(CC)CC DFJDZTPFNSXNAX-UHFFFAOYSA-N 0.000 description 1
- RSIHJDGMBDPTIM-UHFFFAOYSA-N ethoxy(trimethyl)silane Chemical compound CCO[Si](C)(C)C RSIHJDGMBDPTIM-UHFFFAOYSA-N 0.000 description 1
- STBFUFDKXHQVMJ-UHFFFAOYSA-N ethoxy(tripropyl)silane Chemical compound CCC[Si](CCC)(CCC)OCC STBFUFDKXHQVMJ-UHFFFAOYSA-N 0.000 description 1
- VJPOOAWCGMCPEW-UHFFFAOYSA-N ethoxy-[2-[ethoxy(dimethyl)silyl]ethenyl]-dimethylsilane Chemical group CCO[Si](C)(C)C=C[Si](C)(C)OCC VJPOOAWCGMCPEW-UHFFFAOYSA-N 0.000 description 1
- UAPXIVAOXRNIFF-UHFFFAOYSA-N ethoxy-[2-[ethoxy(dimethyl)silyl]ethyl]-dimethylsilane Chemical compound CCO[Si](C)(C)CC[Si](C)(C)OCC UAPXIVAOXRNIFF-UHFFFAOYSA-N 0.000 description 1
- LFUUUIZZGJOEMW-UHFFFAOYSA-N ethoxy-dimethyl-(2-methylpropyl)silane Chemical compound CCO[Si](C)(C)CC(C)C LFUUUIZZGJOEMW-UHFFFAOYSA-N 0.000 description 1
- SRBBHLHDXJTJJZ-UHFFFAOYSA-N ethoxy-dimethyl-octadecylsilane Chemical compound CCCCCCCCCCCCCCCCCC[Si](C)(C)OCC SRBBHLHDXJTJJZ-UHFFFAOYSA-N 0.000 description 1
- MRXDJSZXCXOGCH-UHFFFAOYSA-N ethoxy-dimethyl-octylsilane Chemical compound CCCCCCCC[Si](C)(C)OCC MRXDJSZXCXOGCH-UHFFFAOYSA-N 0.000 description 1
- JRWMWWMUIBQGII-UHFFFAOYSA-N ethoxy-dimethyl-pentylsilane Chemical compound CCCCC[Si](C)(C)OCC JRWMWWMUIBQGII-UHFFFAOYSA-N 0.000 description 1
- QKIRWQZQLLUPNB-UHFFFAOYSA-N ethoxy-dimethyl-propan-2-ylsilane Chemical compound CCO[Si](C)(C)C(C)C QKIRWQZQLLUPNB-UHFFFAOYSA-N 0.000 description 1
- YYUPXWUUUZXFHG-UHFFFAOYSA-N ethoxy-dimethyl-propylsilane Chemical compound CCC[Si](C)(C)OCC YYUPXWUUUZXFHG-UHFFFAOYSA-N 0.000 description 1
- LKAPKXPKRULBJB-UHFFFAOYSA-N ethoxy-dimethyl-tetradecylsilane Chemical compound CCCCCCCCCCCCCC[Si](C)(C)OCC LKAPKXPKRULBJB-UHFFFAOYSA-N 0.000 description 1
- FKDLBUPSJQZYFZ-UHFFFAOYSA-N ethoxy-ethyl-dimethylsilane Chemical compound CCO[Si](C)(C)CC FKDLBUPSJQZYFZ-UHFFFAOYSA-N 0.000 description 1
- PXBLZSXHHLIOSC-UHFFFAOYSA-N ethoxy-heptyl-dimethylsilane Chemical compound CCCCCCC[Si](C)(C)OCC PXBLZSXHHLIOSC-UHFFFAOYSA-N 0.000 description 1
- DHCBQTNFXIIPNW-UHFFFAOYSA-N ethoxy-hexadecyl-dimethylsilane Chemical compound CCCCCCCCCCCCCCCC[Si](C)(C)OCC DHCBQTNFXIIPNW-UHFFFAOYSA-N 0.000 description 1
- SBRXLTRZCJVAPH-UHFFFAOYSA-N ethyl(trimethoxy)silane Chemical compound CC[Si](OC)(OC)OC SBRXLTRZCJVAPH-UHFFFAOYSA-N 0.000 description 1
- HGWSCXYVBZYYDK-UHFFFAOYSA-N ethyl(triphenoxy)silane Chemical compound C=1C=CC=CC=1O[Si](OC=1C=CC=CC=1)(CC)OC1=CC=CC=C1 HGWSCXYVBZYYDK-UHFFFAOYSA-N 0.000 description 1
- KUCGHDUQOVVQED-UHFFFAOYSA-N ethyl(tripropoxy)silane Chemical compound CCCO[Si](CC)(OCCC)OCCC KUCGHDUQOVVQED-UHFFFAOYSA-N 0.000 description 1
- SUHRFYWSDBWMFS-UHFFFAOYSA-N ethyl-methoxy-dimethylsilane Chemical compound CC[Si](C)(C)OC SUHRFYWSDBWMFS-UHFFFAOYSA-N 0.000 description 1
- MYEJNNDSIXAGNK-UHFFFAOYSA-N ethyl-tri(propan-2-yloxy)silane Chemical compound CC(C)O[Si](CC)(OC(C)C)OC(C)C MYEJNNDSIXAGNK-UHFFFAOYSA-N 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 238000004817 gas chromatography Methods 0.000 description 1
- 125000005843 halogen group Chemical group 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- KZNOYSPIOSGZFV-UHFFFAOYSA-N heptyl-methoxy-dimethylsilane Chemical compound CCCCCCC[Si](C)(C)OC KZNOYSPIOSGZFV-UHFFFAOYSA-N 0.000 description 1
- RSKGMYDENCAJEN-UHFFFAOYSA-N hexadecyl(trimethoxy)silane Chemical compound CCCCCCCCCCCCCCCC[Si](OC)(OC)OC RSKGMYDENCAJEN-UHFFFAOYSA-N 0.000 description 1
- QXEMRNUSEZQDKG-UHFFFAOYSA-N hexadecyl-methoxy-dimethylsilane Chemical compound CCCCCCCCCCCCCCCC[Si](C)(C)OC QXEMRNUSEZQDKG-UHFFFAOYSA-N 0.000 description 1
- CZWLNMOIEMTDJY-UHFFFAOYSA-N hexyl(trimethoxy)silane Chemical compound CCCCCC[Si](OC)(OC)OC CZWLNMOIEMTDJY-UHFFFAOYSA-N 0.000 description 1
- MLOOSKOYXCDAIJ-UHFFFAOYSA-N hexyl-methoxy-dimethylsilane Chemical compound CCCCCC[Si](C)(C)OC MLOOSKOYXCDAIJ-UHFFFAOYSA-N 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 229910052740 iodine Inorganic materials 0.000 description 1
- 125000000959 isobutyl group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])* 0.000 description 1
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 1
- 238000005649 metathesis reaction Methods 0.000 description 1
- HZVOZRGWRWCICA-UHFFFAOYSA-N methanediyl Chemical compound [CH2] HZVOZRGWRWCICA-UHFFFAOYSA-N 0.000 description 1
- HTCTWQJVXUXJLI-UHFFFAOYSA-N methoxy(propan-2-yl)silane Chemical compound CO[SiH2]C(C)C HTCTWQJVXUXJLI-UHFFFAOYSA-N 0.000 description 1
- POPACFLNWGUDSR-UHFFFAOYSA-N methoxy(trimethyl)silane Chemical compound CO[Si](C)(C)C POPACFLNWGUDSR-UHFFFAOYSA-N 0.000 description 1
- FUMSHFZKHQOOIX-UHFFFAOYSA-N methoxy(tripropyl)silane Chemical compound CCC[Si](CCC)(CCC)OC FUMSHFZKHQOOIX-UHFFFAOYSA-N 0.000 description 1
- VVBOQOWZIXXXKI-UHFFFAOYSA-N methoxy-[2-[methoxy(dimethyl)silyl]ethenyl]-dimethylsilane Chemical group CO[Si](C)(C)C=C[Si](C)(C)OC VVBOQOWZIXXXKI-UHFFFAOYSA-N 0.000 description 1
- UIJMUCVCCQKMPZ-UHFFFAOYSA-N methoxy-dimethyl-(2-methylpropyl)silane Chemical compound CO[Si](C)(C)CC(C)C UIJMUCVCCQKMPZ-UHFFFAOYSA-N 0.000 description 1
- RUFRLNPHRPYBLF-UHFFFAOYSA-N methoxy-dimethyl-octadecylsilane Chemical compound CCCCCCCCCCCCCCCCCC[Si](C)(C)OC RUFRLNPHRPYBLF-UHFFFAOYSA-N 0.000 description 1
- BAXHQTUUOKMMGV-UHFFFAOYSA-N methoxy-dimethyl-octylsilane Chemical compound CCCCCCCC[Si](C)(C)OC BAXHQTUUOKMMGV-UHFFFAOYSA-N 0.000 description 1
- LTJUCEWBHDKRBL-UHFFFAOYSA-N methoxy-dimethyl-propan-2-ylsilane Chemical compound CO[Si](C)(C)C(C)C LTJUCEWBHDKRBL-UHFFFAOYSA-N 0.000 description 1
- NCHMPORHGFKNSI-UHFFFAOYSA-N methoxy-dimethyl-propylsilane Chemical compound CCC[Si](C)(C)OC NCHMPORHGFKNSI-UHFFFAOYSA-N 0.000 description 1
- BBQFPKHEHQQKJO-UHFFFAOYSA-N methoxy-dimethyl-tetradecylsilane Chemical compound CCCCCCCCCCCCCC[Si](C)(C)OC BBQFPKHEHQQKJO-UHFFFAOYSA-N 0.000 description 1
- JGRQFPMAXOYADV-UHFFFAOYSA-N methoxy-dimethyl-undecylsilane Chemical compound C(CCCCCCCCCC)[Si](C)(C)OC JGRQFPMAXOYADV-UHFFFAOYSA-N 0.000 description 1
- ARYZCSRUUPFYMY-UHFFFAOYSA-N methoxysilane Chemical compound CO[SiH3] ARYZCSRUUPFYMY-UHFFFAOYSA-N 0.000 description 1
- DRXHEPWCWBIQFJ-UHFFFAOYSA-N methyl(triphenoxy)silane Chemical compound C=1C=CC=CC=1O[Si](OC=1C=CC=CC=1)(C)OC1=CC=CC=C1 DRXHEPWCWBIQFJ-UHFFFAOYSA-N 0.000 description 1
- RJMRIDVWCWSWFR-UHFFFAOYSA-N methyl(tripropoxy)silane Chemical compound CCCO[Si](C)(OCCC)OCCC RJMRIDVWCWSWFR-UHFFFAOYSA-N 0.000 description 1
- HLXDKGBELJJMHR-UHFFFAOYSA-N methyl-tri(propan-2-yloxy)silane Chemical compound CC(C)O[Si](C)(OC(C)C)OC(C)C HLXDKGBELJJMHR-UHFFFAOYSA-N 0.000 description 1
- 125000003136 n-heptyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 125000001280 n-hexyl group Chemical group C(CCCCC)* 0.000 description 1
- 125000000740 n-pentyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 125000004123 n-propyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 125000000449 nitro group Chemical group [O-][N+](*)=O 0.000 description 1
- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
- 229940078552 o-xylene Drugs 0.000 description 1
- SLYCYWCVSGPDFR-UHFFFAOYSA-N octadecyltrimethoxysilane Chemical compound CCCCCCCCCCCCCCCCCC[Si](OC)(OC)OC SLYCYWCVSGPDFR-UHFFFAOYSA-N 0.000 description 1
- 125000002347 octyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- MSRJTTSHWYDFIU-UHFFFAOYSA-N octyltriethoxysilane Chemical compound CCCCCCCC[Si](OCC)(OCC)OCC MSRJTTSHWYDFIU-UHFFFAOYSA-N 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- 125000001181 organosilyl group Chemical group [SiH3]* 0.000 description 1
- 150000002989 phenols Chemical class 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- 150000003003 phosphines Chemical class 0.000 description 1
- DOIRQSBPFJWKBE-UHFFFAOYSA-N phthalic acid di-n-butyl ester Natural products CCCCOC(=O)C1=CC=CC=C1C(=O)OCCCC DOIRQSBPFJWKBE-UHFFFAOYSA-N 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 125000004368 propenyl group Chemical group C(=CC)* 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 125000004434 sulfur atom Chemical group 0.000 description 1
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- ASEHKQZNVUOPRW-UHFFFAOYSA-N tert-butyl(triethoxy)silane Chemical compound CCO[Si](OCC)(OCC)C(C)(C)C ASEHKQZNVUOPRW-UHFFFAOYSA-N 0.000 description 1
- HXLWJGIPGJFBEZ-UHFFFAOYSA-N tert-butyl(trimethoxy)silane Chemical compound CO[Si](OC)(OC)C(C)(C)C HXLWJGIPGJFBEZ-UHFFFAOYSA-N 0.000 description 1
- BXYXWBBROYOLIG-UHFFFAOYSA-N tert-butyl-ethoxy-dimethylsilane Chemical compound CCO[Si](C)(C)C(C)(C)C BXYXWBBROYOLIG-UHFFFAOYSA-N 0.000 description 1
- SYFYMKQYUPMRFA-UHFFFAOYSA-N tert-butyl-methoxy-dimethylsilane Chemical compound CO[Si](C)(C)C(C)(C)C SYFYMKQYUPMRFA-UHFFFAOYSA-N 0.000 description 1
- UQMOLLPKNHFRAC-UHFFFAOYSA-N tetrabutyl silicate Chemical compound CCCCO[Si](OCCCC)(OCCCC)OCCCC UQMOLLPKNHFRAC-UHFFFAOYSA-N 0.000 description 1
- ADLSSRLDGACTEX-UHFFFAOYSA-N tetraphenyl silicate Chemical compound C=1C=CC=CC=1O[Si](OC=1C=CC=CC=1)(OC=1C=CC=CC=1)OC1=CC=CC=C1 ADLSSRLDGACTEX-UHFFFAOYSA-N 0.000 description 1
- ZQZCOBSUOFHDEE-UHFFFAOYSA-N tetrapropyl silicate Chemical compound CCCO[Si](OCCC)(OCCC)OCCC ZQZCOBSUOFHDEE-UHFFFAOYSA-N 0.000 description 1
- 229960000984 tocofersolan Drugs 0.000 description 1
- 125000003944 tolyl group Chemical group 0.000 description 1
- GIHPVQDFBJMUAO-UHFFFAOYSA-N tributoxy(ethyl)silane Chemical compound CCCCO[Si](CC)(OCCCC)OCCCC GIHPVQDFBJMUAO-UHFFFAOYSA-N 0.000 description 1
- GYZQBXUDWTVJDF-UHFFFAOYSA-N tributoxy(methyl)silane Chemical compound CCCCO[Si](C)(OCCCC)OCCCC GYZQBXUDWTVJDF-UHFFFAOYSA-N 0.000 description 1
- TUQOTMZNTHZOKS-UHFFFAOYSA-N tributylphosphine Chemical compound CCCCP(CCCC)CCCC TUQOTMZNTHZOKS-UHFFFAOYSA-N 0.000 description 1
- DHWBYAACHDUFAT-UHFFFAOYSA-N tricyclopentylphosphane Chemical compound C1CCCC1P(C1CCCC1)C1CCCC1 DHWBYAACHDUFAT-UHFFFAOYSA-N 0.000 description 1
- FOQJQXVUMYLJSU-UHFFFAOYSA-N triethoxy(1-triethoxysilylethyl)silane Chemical compound CCO[Si](OCC)(OCC)C(C)[Si](OCC)(OCC)OCC FOQJQXVUMYLJSU-UHFFFAOYSA-N 0.000 description 1
- ALVYUZIFSCKIFP-UHFFFAOYSA-N triethoxy(2-methylpropyl)silane Chemical compound CCO[Si](CC(C)C)(OCC)OCC ALVYUZIFSCKIFP-UHFFFAOYSA-N 0.000 description 1
- IZRJPHXTEXTLHY-UHFFFAOYSA-N triethoxy(2-triethoxysilylethyl)silane Chemical compound CCO[Si](OCC)(OCC)CC[Si](OCC)(OCC)OCC IZRJPHXTEXTLHY-UHFFFAOYSA-N 0.000 description 1
- PYOKTQVLKOAHRM-UHFFFAOYSA-N triethoxy(3-triethoxysilylpropyl)silane Chemical compound CCO[Si](OCC)(OCC)CCC[Si](OCC)(OCC)OCC PYOKTQVLKOAHRM-UHFFFAOYSA-N 0.000 description 1
- PQVPWZHUJMEZSA-UHFFFAOYSA-N triethoxy(4-triethoxysilylbutyl)silane Chemical compound CCO[Si](OCC)(OCC)CCCC[Si](OCC)(OCC)OCC PQVPWZHUJMEZSA-UHFFFAOYSA-N 0.000 description 1
- DENFJSAFJTVPJR-UHFFFAOYSA-N triethoxy(ethyl)silane Chemical compound CCO[Si](CC)(OCC)OCC DENFJSAFJTVPJR-UHFFFAOYSA-N 0.000 description 1
- WUMSTCDLAYQDNO-UHFFFAOYSA-N triethoxy(hexyl)silane Chemical compound CCCCCC[Si](OCC)(OCC)OCC WUMSTCDLAYQDNO-UHFFFAOYSA-N 0.000 description 1
- FZMJEGJVKFTGMU-UHFFFAOYSA-N triethoxy(octadecyl)silane Chemical compound CCCCCCCCCCCCCCCCCC[Si](OCC)(OCC)OCC FZMJEGJVKFTGMU-UHFFFAOYSA-N 0.000 description 1
- FHVAUDREWWXPRW-UHFFFAOYSA-N triethoxy(pentyl)silane Chemical compound CCCCC[Si](OCC)(OCC)OCC FHVAUDREWWXPRW-UHFFFAOYSA-N 0.000 description 1
- BJDLPDPRMYAOCM-UHFFFAOYSA-N triethoxy(propan-2-yl)silane Chemical compound CCO[Si](OCC)(OCC)C(C)C BJDLPDPRMYAOCM-UHFFFAOYSA-N 0.000 description 1
- NBXZNTLFQLUFES-UHFFFAOYSA-N triethoxy(propyl)silane Chemical compound CCC[Si](OCC)(OCC)OCC NBXZNTLFQLUFES-UHFFFAOYSA-N 0.000 description 1
- SVKDNKCAGJVMMY-UHFFFAOYSA-N triethoxy(tetradecyl)silane Chemical compound CCCCCCCCCCCCCC[Si](OCC)(OCC)OCC SVKDNKCAGJVMMY-UHFFFAOYSA-N 0.000 description 1
- BBWMWJONYVGXGQ-UHFFFAOYSA-N triethoxy(undecyl)silane Chemical compound CCCCCCCCCCC[Si](OCC)(OCC)OCC BBWMWJONYVGXGQ-UHFFFAOYSA-N 0.000 description 1
- HUZZQXYTKNNCOU-UHFFFAOYSA-N triethyl(methoxy)silane Chemical compound CC[Si](CC)(CC)OC HUZZQXYTKNNCOU-UHFFFAOYSA-N 0.000 description 1
- RKABSDHUZWSRHX-UHFFFAOYSA-N triethyl(phenoxy)silane Chemical compound CC[Si](CC)(CC)OC1=CC=CC=C1 RKABSDHUZWSRHX-UHFFFAOYSA-N 0.000 description 1
- UCUKUIPXDKEYLX-UHFFFAOYSA-N triethyl(propan-2-yloxy)silane Chemical compound CC[Si](CC)(CC)OC(C)C UCUKUIPXDKEYLX-UHFFFAOYSA-N 0.000 description 1
- RXJWOBGGPLEFEE-UHFFFAOYSA-N triethyl(propoxy)silane Chemical compound CCCO[Si](CC)(CC)CC RXJWOBGGPLEFEE-UHFFFAOYSA-N 0.000 description 1
- NFPDOPYDOVONOM-UHFFFAOYSA-N trimethoxy(1-trimethoxysilylethyl)silane Chemical compound CO[Si](OC)(OC)C(C)[Si](OC)(OC)OC NFPDOPYDOVONOM-UHFFFAOYSA-N 0.000 description 1
- XYJRNCYWTVGEEG-UHFFFAOYSA-N trimethoxy(2-methylpropyl)silane Chemical compound CO[Si](OC)(OC)CC(C)C XYJRNCYWTVGEEG-UHFFFAOYSA-N 0.000 description 1
- JCGDCINCKDQXDX-UHFFFAOYSA-N trimethoxy(2-trimethoxysilylethyl)silane Chemical compound CO[Si](OC)(OC)CC[Si](OC)(OC)OC JCGDCINCKDQXDX-UHFFFAOYSA-N 0.000 description 1
- LQASLKRKZDJCBO-UHFFFAOYSA-N trimethoxy(3-trimethoxysilylpropyl)silane Chemical compound CO[Si](OC)(OC)CCC[Si](OC)(OC)OC LQASLKRKZDJCBO-UHFFFAOYSA-N 0.000 description 1
- OTRIBZPALGOVNZ-UHFFFAOYSA-N trimethoxy(4-trimethoxysilylbutyl)silane Chemical compound CO[Si](OC)(OC)CCCC[Si](OC)(OC)OC OTRIBZPALGOVNZ-UHFFFAOYSA-N 0.000 description 1
- HILHCDFHSDUYNX-UHFFFAOYSA-N trimethoxy(pentyl)silane Chemical compound CCCCC[Si](OC)(OC)OC HILHCDFHSDUYNX-UHFFFAOYSA-N 0.000 description 1
- LGROXJWYRXANBB-UHFFFAOYSA-N trimethoxy(propan-2-yl)silane Chemical compound CO[Si](OC)(OC)C(C)C LGROXJWYRXANBB-UHFFFAOYSA-N 0.000 description 1
- HQYALQRYBUJWDH-UHFFFAOYSA-N trimethoxy(propyl)silane Chemical compound CCC[Si](OC)(OC)OC HQYALQRYBUJWDH-UHFFFAOYSA-N 0.000 description 1
- AXNJHBYHBDPTQF-UHFFFAOYSA-N trimethoxy(tetradecyl)silane Chemical compound CCCCCCCCCCCCCC[Si](OC)(OC)OC AXNJHBYHBDPTQF-UHFFFAOYSA-N 0.000 description 1
- LIJFLHYUSJKHKV-UHFFFAOYSA-N trimethoxy(undecyl)silane Chemical compound CCCCCCCCCCC[Si](OC)(OC)OC LIJFLHYUSJKHKV-UHFFFAOYSA-N 0.000 description 1
- NNLPAMPVXAPWKG-UHFFFAOYSA-N trimethyl(1-methylethoxy)silane Chemical compound CC(C)O[Si](C)(C)C NNLPAMPVXAPWKG-UHFFFAOYSA-N 0.000 description 1
- PHPGKIATZDCVHL-UHFFFAOYSA-N trimethyl(propoxy)silane Chemical compound CCCO[Si](C)(C)C PHPGKIATZDCVHL-UHFFFAOYSA-N 0.000 description 1
- AKQNYQDSIDKVJZ-UHFFFAOYSA-N triphenylsilane Chemical compound C1=CC=CC=C1[SiH](C=1C=CC=CC=1)C1=CC=CC=C1 AKQNYQDSIDKVJZ-UHFFFAOYSA-N 0.000 description 1
- COIOYMYWGDAQPM-UHFFFAOYSA-N tris(2-methylphenyl)phosphane Chemical compound CC1=CC=CC=C1P(C=1C(=CC=CC=1)C)C1=CC=CC=C1C COIOYMYWGDAQPM-UHFFFAOYSA-N 0.000 description 1
- LFNXCUNDYSYVJY-UHFFFAOYSA-N tris(3-methylphenyl)phosphane Chemical compound CC1=CC=CC(P(C=2C=C(C)C=CC=2)C=2C=C(C)C=CC=2)=C1 LFNXCUNDYSYVJY-UHFFFAOYSA-N 0.000 description 1
- WXAZIUYTQHYBFW-UHFFFAOYSA-N tris(4-methylphenyl)phosphane Chemical compound C1=CC(C)=CC=C1P(C=1C=CC(C)=CC=1)C1=CC=C(C)C=C1 WXAZIUYTQHYBFW-UHFFFAOYSA-N 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
- 239000002076 α-tocopherol Substances 0.000 description 1
- 235000004835 α-tocopherol Nutrition 0.000 description 1
Description
本発明は、1,2−ビスシリルエチレン化合物の製造方法に関し、さらに詳述すると、ビニルシラン化合物を、触媒の存在下、所定の溶媒中で反応させる効率的な1,2−ビスシリルエチレン化合物の製造方法に関する。 The present invention relates to a process for the preparation of 1,2-bissilylethylene compounds and, more particularly, of an efficient 1,2-bissilylethylene compound in which a vinylsilane compound is reacted in a predetermined solvent in the presence of a catalyst. It relates to the manufacturing method.
1,2−ビスシリルエチレン化合物は、シランカップリング剤や、有機シリカハイブリッド材料の原料等として有用な化合物であり、触媒存在下で、ビニルシラン化合物をメタセシス反応させて得られることが知られている。
具体的には、1,2−ビス(トリエトキシシリル)エチレンの製法として、グラブス第1世代触媒存在下、シュレンクチューブ中で密閉した状態で、ビニルトリエトキシシランを還流下で反応させて製造する手法が知られている(非特許文献1)。
また、ルテニウム触媒存在下、ベンゼンやトルエンを溶媒として用い、シュレンクフラスコ中で密閉した状態で、トリエトキシシランの不均化反応を行う方法も知られている(特許文献1)。
A 1,2-bissilylethylene compound is a compound useful as a silane coupling agent, a raw material of an organic silica hybrid material, etc., and is known to be obtained by metathesis reaction of a vinylsilane compound in the presence of a catalyst .
Specifically, as a process for producing 1,2-bis (triethoxysilyl) ethylene, it is produced by reacting vinyltriethoxysilane under reflux in the presence of Grubbs 1st generation catalyst in a sealed state in a Schlenk tube A method is known (Non-Patent Document 1).
There is also known a method of performing disproportionation reaction of triethoxysilane in the presence of a ruthenium catalyst and using benzene or toluene as a solvent in a closed state in a Schlenk flask (Patent Document 1).
一方、非密閉下で製造する方法として、ベンゼン溶媒中、Ru3(CO)12を触媒とし、トリフェニルシラン存在下でビニルトリエトキシシランを80℃程度に加熱し、反応液を還流させない条件で反応させる手法が知られている(非特許文献2)。
また、イオン液体を溶媒とし、RuH(CO)(PCy3)2触媒を用い、130℃で、反応液を還流させずに反応させる手法も知られている(非特許文献3,4)。
On the other hand, as a method of manufacturing under closed condition, vinyl triethoxysilane is heated to about 80 ° C. in benzene solvent using Ru 3 (CO) 12 as catalyst, in the presence of triphenylsilane, and the reaction liquid is not refluxed. The method to make it react is known (nonpatent literature 2).
There is also known a method in which an ionic liquid is used as a solvent, and a reaction solution is reacted without reflux at 130 ° C. using a RuH (CO) (PCy 3 ) 2 catalyst (Non-Patent Documents 3 and 4).
しかし、上述した各製法は、ビニルシラン化合物と、触媒および必要に応じて用いられる溶媒とを一括で仕込んで反応させる手法であるため、急激に反応を起こして反応制御が困難になる場合が考えられ、工業的実施は困難である。
なお、特許文献1の手法では、工業的に安全に1,2−ビスシリルエチレン化合物を製造するため、触媒を含有する溶媒中に、ビニルシラン化合物を添加して反応させることも考えられるが、従来用いられているトルエン、キシレン等の有機溶媒を用いる系では、十分な反応性を得ることができない。
However, since each of the above-mentioned production methods is a method in which a vinylsilane compound, a catalyst, and a solvent used as needed are charged at a time and reacted, there is a possibility that reaction may occur rapidly and reaction control may become difficult. , Industrial implementation is difficult.
In addition, in the method of Patent Document 1, in order to safely produce the 1,2-bissilylethylene compound industrially, it is conceivable to add a vinylsilane compound to a solvent containing a catalyst and make it react. In the system using an organic solvent such as toluene or xylene used, sufficient reactivity can not be obtained.
また、密閉下で行う特許文献1および非特許文献1の製法では、副生するエチレンを系外に排出できないため、反応器内の圧力が上昇する。したがって、この手法により工業的に生産するためには、耐圧の特殊な圧力容器を使用する必要があり、安全性、製造コスト的に不利となる。
一方、非特許文献2の製法は、非密閉下で行われるが、有害なベンゼンを溶媒として用いる必要があるうえ、反応系を還流条件とすることができないため、トリエトキシビニルシランを用いた場合に副生するエチレンを系外へ除くことが困難となり、収率が向上しないという問題がある。
また、非特許文献3,4の製法も非密閉下で行われるが、溶媒として高価なイオン液体を用いる必要があるため製造コストが高くなるうえ、生成物をイオン液体から分離する方法が記載されていないため、工業的に実施することは困難である。
Further, in the processes of Patent Document 1 and Non-patent Document 1 which are carried out in a closed state, ethylene by-produced can not be discharged out of the system, so the pressure in the reactor rises. Therefore, in order to industrially produce by this method, it is necessary to use a special pressure vessel, which is disadvantageous in terms of safety and manufacturing cost.
On the other hand, although the production method of Non-Patent Document 2 is carried out in a non-sealed manner, it is necessary to use harmful benzene as a solvent, and since the reaction system can not be set to reflux conditions, when using triethoxyvinylsilane. It is difficult to remove by-produced ethylene out of the system and there is a problem that the yield is not improved.
In addition, although the production methods of Non-Patent Documents 3 and 4 are also performed in a non-sealed manner, it is necessary to use an expensive ionic liquid as a solvent, which increases the production cost and describes a method of separating the product from the ionic liquid It is difficult to implement industrially because it is not
本発明は、上記事情に鑑みなされたものであり、非密閉系での反応により、良好な収率で1,2−ビスシリルエチレン化合物を得ることができる1,2−ビスシリルエチレン化合物の効率的な製造方法を提供することを目的とする。 The present invention has been made in view of the above circumstances, and the efficiency of a 1,2-bissilylethylene compound capable of obtaining a 1,2-bissilylethylene compound in a good yield by a reaction in a non-closed system. Purpose is to provide a practical manufacturing method.
本発明者らは、上記課題を解決すべく鋭意検討した結果、ルテニウム触媒存在下でビニルシラン化合物を反応させる場合に、オルガノオキシシラン化合物を溶媒として用いることで、ビニルシラン化合物の反応性を低下させることなく、良好な収率で1,2−ビスシリルエチレン化合物が得られることを見出すとともに、ルテニウム触媒とともに、ホスフィン化合物または酸化防止剤を助触媒として用いることで、触媒活性を維持しつつ、反応時間を短縮できることを見出し、本発明を完成した。 As a result of intensive studies to solve the above problems, the inventors of the present invention have found that when using a vinylsilane compound in the presence of a ruthenium catalyst, the reactivity of the vinylsilane compound is reduced by using an organooxysilane compound as a solvent. It is found that a 1,2-bissilylethylene compound can be obtained in good yield, and the reaction time is maintained while maintaining the catalytic activity by using a phosphine compound or an antioxidant as a co-catalyst together with the ruthenium catalyst. It has been found that the present invention can be shortened.
すなわち、本発明は、
1. 下記一般式(1)
で表されるビニルシラン化合物を、溶媒中、ルテニウム触媒存在下で反応させる、下記一般式(2)
で表される1,2−ビスシリルエチレン化合物の製造方法であって、前記溶媒として、オルガノオキシシラン化合物(ただし、式(1)のビニルシラン化合物は除く。)を用いることを特徴とする1,2−ビスシリルエチレン化合物の製造方法、
2. 前記反応を、200℃以下に保って還流下で行う1の1,2−ビスシリルエチレン化合物の製造方法、
3. 前記ルテニウム触媒と前記オルガノオキシシラン化合物との混合物中に、前記ビニルシラン化合物を添加しながら反応を行う、または前記ビニルシラン化合物および前記オルガノオキシシラン化合物の混合物を添加しながら反応を行う1または2の1,2−ビスシリルエチレン化合物の製造方法、
4. 前記ビニルシラン化合物および前記オルガノオキシシラン化合物として、予め還流脱気したものを用いる3の1,2−ビスシリルエチレン化合物の製造方法、
5. 前記ビニルシラン化合物が、トリメトキシビニルシランまたはトリエトキシビニルシランである1〜4のいずれかの1,2−ビスシリルエチレン化合物の製造方法、
6. 前記オルガノオキシシラン化合物が、テトラオルガノオキシシラン、トリオルガノオキシシラン、ジオルガノオキシシラン、モノオルガノオキシシラン、およびビス(オルガノオキシシリル)アルカンから選ばれる少なくとも1種である1〜5のいずれかの1,2−ビスシリルエチレン化合物の製造方法、
7. 助触媒として、ホスフィン化合物または酸化防止剤を添加する1〜6のいずれかの1,2−ビスシリルエチレン化合物の製造方法
を提供する。
That is, the present invention
1. The following general formula (1)
The vinylsilane compound represented by the formula is reacted in the presence of a ruthenium catalyst in a solvent:
A process for producing a 1,2-bissilylethylene compound represented by the formula 1, wherein an organooxysilane compound (but excluding the vinylsilane compound of the formula (1)) is used as the solvent 1, Method for producing 2-bissilylethylene compound,
2. A method for producing a 1,2-bissilylethylene compound according to 1, wherein the reaction is carried out under reflux while keeping the temperature at 200 ° C. or lower,
3. The reaction is performed while adding the vinylsilane compound to a mixture of the ruthenium catalyst and the organooxysilane compound, or the reaction is performed while adding a mixture of the vinylsilane compound and the organooxysilane compound 1 or 2 1 , A method of producing a 2-bissilylethylene compound,
4. 3. The method for producing a 1,2-bissilylethylene compound according to 3, wherein the vinylsilane compound and the organooxysilane compound are previously degassed by reflux degassing,
5. The method for producing a 1,2-bissilylethylene compound according to any one of 1 to 4, wherein the vinylsilane compound is trimethoxyvinylsilane or triethoxyvinylsilane.
6. Any one of 1 to 5, wherein the organooxysilane compound is at least one selected from tetraorganooxysilane, triorganooxysilane, diorganooxysilane, monoorganooxysilane, and bis (organooxysilyl) alkanes. A process for producing a 1,2-bissilylethylene compound,
7. Provided is a method for producing any one of 1,2-bissilylethylene compounds, wherein a phosphine compound or an antioxidant is added as a cocatalyst.
本発明の1,2−ビスシリルエチレン化合物の製造方法によれば、特殊かつ高価な高耐圧の製造装置を用いることなく、非密閉下で、工業的かつ安全に1,2−ビスシリルエチレン化合物を製造することができる。 According to the method for producing a 1,2-bissilylethylene compound of the present invention, the 1,2-bissilylethylene compound can be industrially and safely unsealed without using a special and expensive high pressure resistant production apparatus Can be manufactured.
以下、本発明について具体的に説明する。
本発明に係る1,2−ビスシリルエチレン化合物の製造方法は、一般式(1)で表されるビニルシラン化合物を、溶媒中、ルテニウム触媒存在下で反応させて、一般式(2)
で表される1,2−ビスシリルエチレン化合物を製造する際に、溶媒として、オルガノオキシシラン化合物を用いることを特徴とする。
Hereinafter, the present invention will be specifically described.
The method for producing a 1,2-bissilylethylene compound according to the present invention comprises reacting a vinylsilane compound represented by the general formula (1) in the presence of a ruthenium catalyst in a solvent to obtain a compound of the general formula (2)
When manufacturing the 1, 2- bis silyl ethylene compound represented by these, it is characterized by using an organo oxysilane compound as a solvent.
ここで、R1およびR2は、互いに独立して、置換または非置換の炭素数1〜20の1価炭化水素基を表すが、置換または非置換の炭素数1〜10の1価炭化水素基が好ましく、非置換の炭素数1〜10の1価炭化水素基がより好ましい。また、nは、0、1または2の整数を表す。
1価炭化水素基としては、特に限定されるものではないが、その具体例としては、メチル、エチル、n−プロピル、n−ブチル、n−ペンチル、n−ヘキシル、n−へプチル、n−オクチル、n−デシル、n−オクタデシル基等の直鎖状アルキル基;イソプロピル、イソブチル、t−ブチル、2−エチルヘキシル基等の分岐鎖状アルキル基;シクロペンチル、シクロヘキシル基等の環状アルキル基;ビニル、プロペニル基等のアルケニル基;フェニル、トリル基等のアリール基;ベンジル基等のアラルキル基などが挙げられる。特に、原料の入手性の点で、R1はメチル基、R2はメチル基またはエチル基が好ましい。
なお、上記各1価炭化水素基は、その中の少なくとも1つの水素原子が、ハロゲン原子(フッ素、塩素、臭素、ヨウ素原子)、シアノ基、ニトロ基、アミノ基等で置換されていてもよい。
Here, R 1 and R 2 independently represent a substituted or unsubstituted monovalent hydrocarbon group having 1 to 20 carbon atoms, but a substituted or unsubstituted monovalent hydrocarbon having 1 to 10 carbon atoms Group is preferable, and unsubstituted C1-C10 monovalent hydrocarbon group is more preferable. Also, n represents an integer of 0, 1 or 2.
The monovalent hydrocarbon group is not particularly limited, and specific examples thereof include methyl, ethyl, n-propyl, n-butyl, n-pentyl, n-hexyl, n-heptyl and n- Linear alkyl groups such as octyl, n-decyl and n-octadecyl; Branched alkyl groups such as isopropyl, isobutyl, t-butyl and 2-ethylhexyl; Cyclic alkyl such as cyclopentyl and cyclohexyl; Vinyl Alkenyl groups such as propenyl group; Aryl groups such as phenyl and tolyl group; Aralkyl groups such as benzyl group and the like. In particular, in view of the availability of raw materials, R 1 is preferably a methyl group, and R 2 is preferably a methyl group or an ethyl group.
In each of the above monovalent hydrocarbon groups, at least one hydrogen atom therein may be substituted by a halogen atom (fluorine, chlorine, bromine, iodine atom), a cyano group, a nitro group, an amino group, etc. .
上記一般式(1)で表されるビニルシラン化合物の具体例としては、トリメトキシビニルシラン、トリエトキシビニルシラン、トリ−n−プロポキシビニルシラン、トリイソプロポキシビニルシラン、トリ−n−ブトキシビニルシラン、トリフェノキシビニルシラン等のトリオルガノオキシシラン;メチルジメトキシビニルシラン、メチルジエトキシビニルシラン、エチルジメトキシビニルシラン、エチルジエトキシビニルシラン、メチルジフェノキシビニルシラン、エチルジフェノキシビニルシラン等のジオルガノオキシシラン;ジメチルメトキシビニルシラン、ジメチルエトキシビニルシラン、ジエチルメトキシビニルシラン、ジエチルエトキシビニルシラン、ジメチルフェノキシビニルシラン、ジエチルフェノキシビニルシラン等のモノオルガノオキシシランなどが挙げられるが、本発明においては、特に、トリメトキシビニルシランまたはトリエトキシビニルシランが好適である。 Specific examples of the vinylsilane compound represented by the above general formula (1) include trimethoxyvinylsilane, triethoxyvinylsilane, tri-n-propoxyvinylsilane, triisopropoxyvinylsilane, tri-n-butoxyvinylsilane, triphenoxyvinylsilane and the like Triorganooxysilanes; Diorganooxysilanes such as methyldimethoxyvinylsilane, methyldiethoxyvinylsilane, ethyldimethoxyvinylsilane, ethyldiethoxyvinylsilane, methyldiphenoxyvinylsilane, ethyldiphenoxyvinylsilane, etc .; dimethylmethoxyvinylsilane, dimethylethoxyvinylsilane, diethylmethoxyvinylsilane Such as diethylethoxyvinylsilane, dimethylphenoxyvinylsilane and diethylphenoxyvinylsilane Although such organooxysilane are mentioned, in the present invention, in particular, trimethoxyvinylsilane or triethoxy vinyl silane is preferred.
また、上記一般式(1)で表されるビニルシラン化合物が反応して得られる一般式(2)で表される1,2−ビスシリルエチレン化合物の具体例としては、1,2−ビス(トリメトキシシリル)エチレン、1,2−ビス(トリエトキシシリル)エチレン、1,2−ビス(トリ−n−プロピルシリル)エチレン、1,2−ビス(トリイソプロピルシリル)エチレン、1,2−ビス(トリ−n−ブトキシシリル)エチレン、1,2−ビス(トリフェノキシシリル)エチレン、1,2−ビス(メチルジメトキシシリル)エチレン、1,2−ビス(メチルジエトキシシリル)エチレン、1,2−ビス(エチルジメトキシシリル)エチレン、1,2−ビス(メチルジフェノキシシリル)エチレン、1,2−ビス(エチルジフェノキシシリル)エチレン、1,2−ビス(ジメチルメトキシシリル)エチレン、1,2−ビス(ジメチルエトキシシリル)エチレン、1,2−ビス(ジエチルメトキシシリル)エチレン、1,2−ビス(ジエチルエトキシシリル)エチレン、1,2−ビス(ジメチルフェノキシシリル)エチレン、1,2−ビス(ジエチルフェノキシシリル)エチレン等が挙げられる。 In addition, specific examples of the 1,2-bissilylethylene compound represented by the general formula (2) obtained by the reaction of the vinylsilane compound represented by the above general formula (1) include 1,2-bis (tri Methoxysilyl) ethylene, 1,2-bis (triethoxysilyl) ethylene, 1,2-bis (tri-n-propylsilyl) ethylene, 1,2-bis (triisopropylsilyl) ethylene, 1,2-bis ( Tri-n-butoxysilyl) ethylene, 1,2-bis (triphenoxysilyl) ethylene, 1,2-bis (methyldimethoxysilyl) ethylene, 1,2-bis (methyldiethoxysilyl) ethylene, 1,2- Bis (ethyldimethoxysilyl) ethylene, 1,2-bis (methyldiphenoxysilyl) ethylene, 1,2-bis (ethyldiphenoxysilyl) ethylene, , 2-Bis (dimethylmethoxysilyl) ethylene, 1,2-bis (dimethylethoxysilyl) ethylene, 1,2-bis (diethylmethoxysilyl) ethylene, 1,2-bis (diethylethoxysilyl) ethylene, 1,2 -Bis (dimethyl phenoxy silyl) ethylene, 1, 2- bis (diethyl phenoxy silyl) ethylene, etc. are mentioned.
本発明の溶媒として用いられるオルガノオキシシラン化合物としては、オルガノオキシ基を含有するシラン化合物であれば特に限定されるものではない(ただし、式(1)のビニルシラン化合物は除く。)が、触媒の活性を低下させる硫黄原子や窒素原子を含有しない化合物が好ましい。
その具体例としては、テトラメトキシシラン、テトラエトキシシラン、テトラ−n−プロポキシシラン、テトラ−n−ブトキシシラン、テトライソブトキシシラン等のテトラアルコキシシラン;テトラフェノキシシラン等のテトラアリールオキシシラン;メチルトリメトキシシラン、メチルトリエトキシシラン、メチルトリ−n−プロポキシシラン、メチルトリイソプロポキシシラン、メチルトリ−n−ブトキシシラン、エチルトリメトキシシラン、エチルトリエトキシシラン、エチルトリ−n−プロポキシシラン、エチルトリイソプロポキシシラン、エチルトリ−n−ブトキシシラン、n−プロピルトリメトキシシラン、n−プロピルトリエトキシシラン、イソプロピルトリメトキシシラン、イソプロピルトリエトキシシラン、n−ブチルトリメトキシシラン、n−ブチルトリエトキシシラン、イソブチルトリメトキシシラン、イソブチルトリエトキシシラン、t−ブチルトリメトキシシラン、t−ブチルトリエトキシシラン、n−ペンチルトリメトキシシラン、n−ペンチルトリエトキシシラン、n−ヘキシルトリメトキシシラン、n−ヘキシルトリエトキシシラン、n−オクチルトリメトキシシラン、n−オクチルトリエトキシシラン、n−デシルトリメトキシシラン、n−デシルトリエトキシシラン、n−ウンデシルトリメトキシシラン、n−ウンデシルトリエトキシシラン、n−ドデシルトリメトキシラン、n−ドデシルトリエトキシシラン、n−テトラデシルトリメトキシシラン、n−テトラデシルトリエトキシシラン、n−ヘキサデシルトリメトキシシラン、n−ヘキサデシルトリエトキシシラン、n−オクタデシルトリメトキシシラン、n−オクタデシルトリエトキシシラン等のトリアルコキシシラン;メチルトリフェノキシシラン、エチルトリフェノキシシラン等のトリアリールオキシシラン;ジメチルジメトキシシラン、ジメチルジエトキシシラン、ジメチルジ−n−プロポキシシラン、ジメチルジイソプロポキシシラン、ジメチルジ−n−ブトキシシラン、ジメチルジフェノキシシラン、ジエチルジメトキシシラン、ジエチルジエトキシシラン、ジ−n−プロピルジメトキシシラン、ジ−n−プロピルジエトキシシラン、ジイソプロピルジメトキシシラン、ジイソプロピルジエトキシシラン、ジ−n−ブチルジメトキシシラン、ジ−n−ブチルジエトキシシラン、ジイソブチルジメトキシシラン、ジイソブチルジエトキシシラン、ジ−n−ペンチルジメトキシシラン、ジ−n−ペンチルジエトキシシラン、ジ−n−ヘキシルジメトキシシラン、ジ−n−ヘキシルジエトキシシラン等のジアルコキシシラン、ジメチルジフェノキシシラン、ジエチルジフェノキシシラン等のジアリールオキシシラン;トリメチルメトキシシラン、トリメチルエトキシシラン、トリメチル−n−プロポキシシラン、トリメチルイソプロポキシシラン、トリメチル−n−ブトキシシラン、トリメチルフェノキシシラン、トリエチルメトキシシラン、トリエチルエトキシシラン、トリエチル−n−プロポキシシラン、トリエチルイソプロポキシシラン、トリエチル−n−ブトキシシラン、トリ−n−プロピルメトキシシラン、トリ−n−プロピルエトキシシラン、トリイソプロピルメトキシシラン、トリイソプロピルエトキシシラン、エチルジメチルメトキシシラン、エチルジメチルエトキシシラン、n−プロピルジメチルメトキシシラン、n−プロピルジメチルエトキシシラン、イソプロピルジメチルメトキシシラン、イソプロピルジメチルエトキシシラン、n−ブチルジメチルメトキシシラン、n−ブチルジメチルエトキシシラン、イソブチルジメチルメトキシシラン、イソブチルジメチルエトキシシラン、s−ブチルジメチルメトキシシラン、s−ブチルジメチルエトキシシラン、t−ブチルジメチルメトキシシラン、t−ブチルジメチルエトキシシラン、n−ペンチルジメチルメトキシシラン、n−ペンチルジメチルエトキシシラン、n−ヘキシルジメチルメトキシシラン、n−ヘキシルジメチルエトキシシラン、n−ヘプチルジメチルメトキシシラン、n−ヘプチルジメチルエトキシシラン、n−オクチルジメチルメトキシシラン、n−オクチルジメチルエトキシシラン、n−デシルジメチルメトキシシラン、n−デシルジメチルエトキシシラン、n−ウンデシルジメチルメトキシシラン、n−ウンデシルジメチルエトキシシラン、n−ドデシルジメチルメトキシシラン、n−ドデシルジメチルエトキシシラン、n−テトラデシルジメチルメトキシシラン、n−テトラデシルジメチルエトキシシラン、n−ヘキサデシルジメチルメトキシシラン、n−ヘキサデシルジメチルエトキシシラン、n−オクタデシルジメチルメトキシシラン、n−オクタデシルジメチルエトキシシラン等のモノアルコキシシラン;トリメチルフェノキシシラン、トリエチルフェノキシシラン等のモノアリールオキシシラン;1,2−ビス(トリメトキシシリル)エタン、1,1−ビス(トリメトキシシリル)エタン、1,2−ビス(トリエトキシシリル)エタン、1,1−ビス(トリエトキシシリル)エタン、1,3−ビス(トリメトキシシリル)プロパン、1,3−ビス(トリエトキシシリル)プロパン、1,4−ビス(トリメトキシシリル)ブタン、1,4−ビス(トリエトキシシリル)ブタン、1,2−ビス(トリメトキシシリル)エチレン、1,1−ビス(トリメトキシシリル)エチレン、1,2−ビス(トリエトキシシリル)エチレン、1,1−ビス(トリエトキシシリル)エチレン、1,2−ビス(ジメトキシメチルシリル)エタン、1,2−ビス(ジエトキシメチルルシリル)エタン、1,2−ビス(ジメトキシメチルシリル)エチレン、1,2−ビス(ジエトキシメチルシリル)エチレン、1,2−ビス(メトキシジメチルシリル)エタン、1,2−ビス(エトキシジメチルシリル)エタン、1,2−ビス(メトキシジメチルシリル)エチレン、1,2−ビス(エトキシジメチルシリル)エチレン等のビス(アルコキシシリル)アルカン等が挙げられる。
The organooxysilane compound used as the solvent of the present invention is not particularly limited as long as it is a silane compound containing an organooxy group (however, the vinylsilane compound of the formula (1) is excluded) is a catalyst. Compounds which do not contain sulfur atoms or nitrogen atoms which reduce the activity are preferred.
Specific examples thereof include tetraalkoxysilanes such as tetramethoxysilane, tetraethoxysilane, tetra-n-propoxysilane, tetra-n-butoxysilane and tetraisobutoxysilane; tetraaryloxysilanes such as tetraphenoxysilane; Methoxysilane, methyltriethoxysilane, methyltri-n-propoxysilane, methyltriisopropoxysilane, methyltri-n-butoxysilane, ethyltrimethoxysilane, ethyltriethoxysilane, ethyltri-n-propoxysilane, ethyltriisopropoxysilane , Ethyltri-n-butoxysilane, n-propyltrimethoxysilane, n-propyltriethoxysilane, isopropyltrimethoxysilane, isopropyltriethoxysilane, n-butyl Limethoxysilane, n-butyltriethoxysilane, isobutyltrimethoxysilane, isobutyltriethoxysilane, t-butyltrimethoxysilane, t-butyltriethoxysilane, n-pentyltrimethoxysilane, n-pentyltriethoxysilane, n -Hexyltrimethoxysilane, n-hexyltriethoxysilane, n-octyltrimethoxysilane, n-octyltriethoxysilane, n-decyltrimethoxysilane, n-decyltriethoxysilane, n-undecyltrimethoxysilane, n Undecyltriethoxysilane, n-dodecyltrimethoxysilane, n-dodecyltriethoxysilane, n-tetradecyltrimethoxysilane, n-tetradecyltriethoxysilane, n-hexadecyltrimethoxysilane, n-hexane Trialkoxysilanes such as sadecyltriethoxysilane, n-octadecyltrimethoxysilane, n-octadecyltriethoxysilane; triaryloxysilanes such as methyltriphenoxysilane, ethyltriphenoxysilane; dimethyldimethoxysilane, dimethyldiethoxysilane, Dimethyldi-n-propoxysilane, dimethyldiisopropoxysilane, dimethyldi-n-butoxysilane, dimethyldiphenoxysilane, diethyldimethoxysilane, diethyldiethoxysilane, di-n-propyldimethoxysilane, di-n-propyldiethoxysilane , Diisopropyldimethoxysilane, diisopropyldiethoxysilane, di-n-butyldimethoxysilane, di-n-butyldiethoxysilane, diisobutyldimethoxysilane, di- Isobutyldiethoxysilane, di-n-pentyldimethoxysilane, di-n-pentyldiethoxysilane, di-n-hexyldimethoxysilane, dialkoxysilanes such as di-n-hexyldiethoxysilane, dimethyldiphenoxysilane, diethyl Diaryloxysilanes such as diphenoxysilane; trimethylmethoxysilane, trimethylethoxysilane, trimethyl-n-propoxysilane, trimethylisopropoxysilane, trimethyl-n-butoxysilane, trimethylphenoxysilane, triethylmethoxysilane, triethylethoxysilane, triethyl- n-propoxysilane, triethylisopropoxysilane, triethyl-n-butoxysilane, tri-n-propylmethoxysilane, tri-n-propylethoxysilane, Isopropylmethoxysilane, triisopropylethoxysilane, ethyldimethylmethoxysilane, ethyldimethylethoxysilane, n-propyldimethylmethoxysilane, n-propyldimethylethoxysilane, isopropyldimethylmethoxysilane, isopropyldimethylethoxysilane, n-butyldimethylmethoxysilane, n-Butyldimethylethoxysilane, isobutyldimethylmethoxysilane, isobutyldimethylethoxysilane, s-butyldimethylmethoxysilane, s-butyldimethylethoxysilane, t-butyldimethylmethoxysilane, t-butyldimethylethoxysilane, n-pentyldimethylmethoxysilane Silane, n-pentyldimethylethoxysilane, n-hexyldimethylmethoxysilane, n-hexyldimethyl Toxisilane, n-heptyldimethylmethoxysilane, n-heptyldimethylethoxysilane, n-octyldimethylmethoxysilane, n-octyldimethylethoxysilane, n-decyldimethylmethoxysilane, n-decyldimethylethoxysilane, n-undecyldimethylmethoxy Silane, n-undecyldimethylethoxysilane, n-dodecyldimethylmethoxysilane, n-dodecyldimethylethoxysilane, n-tetradecyldimethylmethoxysilane, n-tetradecyldimethylethoxysilane, n-hexadecyldimethylmethoxysilane, n- Monoalkoxysilanes such as hexadecyldimethylethoxysilane, n-octadecyldimethylmethoxysilane, n-octadecyldimethylethoxysilane; trimethylphenoxysilane; Monoaryloxysilanes such as triethylphenoxysilane; 1,2-bis (trimethoxysilyl) ethane, 1,1-bis (trimethoxysilyl) ethane, 1,2-bis (triethoxysilyl) ethane, 1,1- Bis (triethoxysilyl) ethane, 1,3-bis (trimethoxysilyl) propane, 1,3-bis (triethoxysilyl) propane, 1,4-bis (trimethoxysilyl) butane, 1,4-bis ( Triethoxysilyl) butane, 1,2-bis (trimethoxysilyl) ethylene, 1,1-bis (trimethoxysilyl) ethylene, 1,2-bis (triethoxysilyl) ethylene, 1,1-bis (triethoxy) Silyl) ethylene, 1,2-bis (dimethoxymethylsilyl) ethane, 1,2-bis (diethoxymethylsilyl) ethane, , 2-bis (dimethoxymethylsilyl) ethylene, 1,2-bis (diethoxymethylsilyl) ethylene, 1,2-bis (methoxydimethylsilyl) ethane, 1,2-bis (ethoxydimethylsilyl) ethane, 1, And bis (alkoxysilyl) alkanes such as 2-bis (methoxydimethylsilyl) ethylene and 1,2-bis (ethoxydimethylsilyl) ethylene.
これらのオルガノオキシシラン化合物は、単独で用いても、2種類以上組み合わせて用いてもよい。2種類以上のオルガノオキシシランを用いる場合の混合比率は任意であり、混合液の沸点を考慮して混合比を決定すればよい。
また、オルガノオキシシラン化合物(の混合物)は、反応で生成する1,2−ビスシリルエチレン化合物と蒸留分離可能な沸点差があることが好ましく、このような観点から、テトラメトキシシラン、メチルトリメトキシシラン、ジメチルジメトキシシラン、1,2−ビス(トリメトキシシリル)エチレン、テトラエトキシシラン、メチルトリエトキシシラン、ジメチルジエトキシシラン、ビス(トリエトキシシリル)エチレン、およびこれらの混合物が好適である。
なお、本発明の製造方法では、反応効率を妨げない範囲で、上記オルガノオキシシラン化合物に加え、従来この種の反応に用いられる各種溶媒を添加することもできるが、その場合でもオルガノオキシシラン化合物を70質量%以上の割合で用いることが好ましく、80質量%以上の割合で用いることがより好ましく、90質量%以上の割合で用いることがより一層好ましく、単独溶媒で反応を行うことがさらに好ましい。
These organooxysilane compounds may be used alone or in combination of two or more. The mixing ratio in the case of using two or more types of organooxysilanes is arbitrary, and the mixing ratio may be determined in consideration of the boiling point of the mixed solution.
In addition, (or a mixture of) the organooxysilane compound preferably has a difference in boiling point capable of being separated by distillation from the 1,2-bissilylethylene compound produced in the reaction, and from such a viewpoint, tetramethoxysilane, methyltrimethoxy Silanes, dimethyldimethoxysilane, 1,2-bis (trimethoxysilyl) ethylene, tetraethoxysilane, methyltriethoxysilane, dimethyldiethoxysilane, bis (triethoxysilyl) ethylene, and mixtures thereof are preferred.
In the production method of the present invention, various solvents conventionally used for this type of reaction can be added in addition to the above-mentioned organooxysilane compound, as long as the reaction efficiency is not impaired. Even in this case, the organooxysilane compound It is preferable to use at a rate of 70% by mass or more, more preferably at a rate of 80% by mass or more, still more preferably at a rate of 90% by mass or more, and still more preferably performing the reaction with a single solvent .
本発明で用いるオルガノオキシシラン化合物の使用量は特に制限されないが、反応器内で溶媒として用いられることから、少なくとも反応器に設置される撹拌機や温度計等の機器類が使用可能となる最低限の量で用いることが好ましい。特に、ビニルシラン化合物のみを添加して還流下で反応を行う場合には、生成するビスシリルエチレン化合物の沸点によっては、内温が上昇していく場合があるため、生成するビスシリルエチレン化合物に対する溶媒量を調節して、反応温度を後述する温度範囲に保てる溶媒量とすることが好ましい。 The use amount of the organooxysilane compound used in the present invention is not particularly limited, but it is at least used as a solvent in the reactor, and thus at least the equipment such as a stirrer or thermometer installed in the reactor can be used. It is preferred to use in limited amounts. In particular, when the reaction is carried out under reflux by adding only a vinylsilane compound, the internal temperature may increase depending on the boiling point of the bissilylethylene compound to be produced, so a solvent for the bissilylethylene compound to be produced may be generated. Preferably, the amount is adjusted so that the reaction temperature can be maintained in the temperature range described later.
ルテニウム触媒としては、従来この種の反応に用いられている触媒から適宜選択して用いることができるが、特に、ルテニウム錯体触媒が好ましく、ルテニウムカルベン錯体触媒がより好ましい。
ルテニウム触媒の具体例としては、(3−フェニル−1H−インデン−1−イリデン)ビス(トリシクロヘキシルホスフィン)ルテニウムジクロリド、ビス(トリシクロヘキシルホスフィン)ベンジリデンルテニウムジクロリド、ビス(トリフェニルホスフィン)−3,3−ジフェニルプロペニリデンルテニウムジクロリド、ビス(トリシクロヘキシルホスフィン)t−ブチルビニリデンルテニウムジクロリド、ビス(1,3−ジイソプロピルイミダゾリン−2−イリデン)ベンジリデンルテニウムジクロリド、ビス(1,3−ジシクロヘキシルイミダゾリン−2−イリデン)ベンジリデンルテニウムジクロリド、(1,3−ジメシチルイミダゾリン−2−イリデン)(トリシクロヘキシルホスフィン)ベンジリデンルテニウムジクロリド、(1,3−ジメシチルイミダゾリジン−2−イリデン)(トリシクロヘキシルホスフィン)ベンジリデンルテニウムジクロリド、ビス(トリシクロヘキシルホスフィン)エトキシメチリデンルテニウムジクロリド、(1,3−ジメシチルイミダゾリジン−2−イリデン)(トリシクロヘキシルホスフィン)エトキシメチリデンルテニウムジクロリド等が挙げられる。
これらの触媒の中でも、(3−フェニル−1H−インデン−1−イリデン)ビス(トリシクロヘキシルホスフィン)ルテニウムジクロリド、ビス(トリシクロヘキシルホスフィン)ベンジリデンルテニウムジクロリドが、反応の選択性が良好なことから好ましく、特に反応の選択性、反応性および触媒の入手性などの点から、(3−フェニル−1H−インデン−1−イリデン)ビス(トリシクロヘキシルホスフィン)ルテニウムジクロリドがより好ましい。
The ruthenium catalyst can be appropriately selected from catalysts conventionally used for this type of reaction, but a ruthenium complex catalyst is particularly preferable, and a ruthenium carbene complex catalyst is more preferable.
Specific examples of the ruthenium catalyst include (3-phenyl-1H-indene-1-ylidene) bis (tricyclohexylphosphine) ruthenium dichloride, bis (tricyclohexylphosphine) benzylideneruthenium dichloride, bis (triphenylphosphine) -3,3. -Diphenylpropenylideneruthenium dichloride, bis (tricyclohexylphosphine) t-butylvinylideneruthenium dichloride, bis (1,3-diisopropylimidazolin-2-ylidene) benzylideneruthenium dichloride, bis (1,3-dicyclohexylimidazolin-2-ylidene) ) Benzylidene ruthenium dichloride, (1,3-dimesitylimidazolin-2-ylidene) (tricyclohexylphosphine) benzylidene ruthenium dichloride, 1,3-Dimesitylimidazolidin-2-ylidene) (tricyclohexylphosphine) benzylideneruthenium dichloride, bis (tricyclohexylphosphine) ethoxymethylideneruthenium dichloride, (1,3-dimesitylimidazolidin-2-ylidene) Examples include (tricyclohexylphosphine) ethoxymethylidene ruthenium dichloride and the like.
Among these catalysts, (3-phenyl-1H-indene-1-ylidene) bis (tricyclohexylphosphine) ruthenium dichloride and bis (tricyclohexylphosphine) benzylideneruthenium dichloride are preferable because of their good reaction selectivity. In particular, (3-phenyl-1H-indene-1-ylidene) bis (tricyclohexylphosphine) ruthenium dichloride is more preferable in terms of reaction selectivity, reactivity, and availability of a catalyst.
本発明の製造方法において、ルテニウム触媒の使用量は、特に限定されるものではないが、反応速度を適度に保って効率的な反応を行うことを考慮すると、ビニルシラン化合物1molに対して、0.0001mmol〜0.1mol、好ましくは0.001mmol〜0.01molが好ましい。 In the production method of the present invention, the amount of the ruthenium catalyst used is not particularly limited, but in view of efficient reaction while maintaining an appropriate reaction rate, 0. 0 to 1 mol of the vinylsilane compound. 0001 mmol to 0.1 mol, preferably 0.001 mmol to 0.01 mol is preferred.
本発明の製造方法では、ルテニウム触媒の活性を向上させたり、その失活を抑えたりして反応時間の短縮を図る目的で、助触媒としてホスフィン化合物または酸化防止剤を添加してもよい。
ホスフィン化合物の具体例としては、トリフェニルホスフィン、ジフェニルシクロヘキシルホスフィン、フェニルジシクロヘキシルホスフィン、トリシクロヘキシルホスフィン、トリシクロペンチルホスフィン、トリ−n−ブチルホスフィン、トリ−t−ブチルホスフィン、トリ−o−トリルホスフィン、トリ−m−トリルホスフィン、トリ−p−トリルホスフィン等が挙げられ、特に、トリシクロヘキシルホスフィンが好ましい。
酸化防止剤としては、2,6−ジ−t−ブチル−4−メチルフェノール、2,2′−メチレンビス(6−t−ブチル−4−メチルフェノール)等のフェノール系化合物;L−アスコルビン酸、α−トコフェロールなどが挙げられ、特に、L−アスコルビン酸が好ましい。
これら助触媒の添加量は、所期の効果が発揮される量であれば特に限定されるものではないが、ルテニウム触媒1molに対して0.1〜10molが好ましく、0.5〜4molがより好ましい。
In the production method of the present invention, a phosphine compound or an antioxidant may be added as a co-catalyst for the purpose of improving the activity of the ruthenium catalyst or suppressing its deactivation to shorten the reaction time.
Specific examples of phosphine compounds include triphenyl phosphine, diphenylcyclohexyl phosphine, phenyl dicyclohexyl phosphine, tricyclohexyl phosphine, tricyclopentyl phosphine, tri-n-butyl phosphine, tri-t-butyl phosphine, tri-o-tolyl phosphine, tri -M-tolyl phosphine, tri-p-tolyl phosphine and the like can be mentioned, and in particular, tricyclohexyl phosphine is preferable.
Phenolic compounds such as 2,6-di-t-butyl-4-methylphenol and 2,2'-methylenebis (6-t-butyl-4-methylphenol) as antioxidants; L-ascorbic acid, α-tocopherol and the like can be mentioned, and in particular, L-ascorbic acid is preferable.
The addition amount of these co-catalysts is not particularly limited as long as the desired effect is exhibited, but 0.1 to 10 mol is preferable to 1 mol of the ruthenium catalyst, and 0.5 to 4 mol is more preferable. preferable.
本発明のビスシリルエチレン化合物の製造方法は、原料であるビニルシラン化合物、溶媒であるオルガノオキシラン化合物、ルテニウム触媒、および必要に応じて用いられる助触媒を任意の順序で混合して行うことができるが、特に、ルテニウム触媒と溶媒であるオルガノオキシシラン化合物との混合物中に、ビニルシラン化合物を添加して反応を行うことが好ましい。
この際、ビニルシラン化合物は、それ単独で添加してもよく、また、反応温度を一定の範囲内に保つために、ビニルシラン化合物と溶媒であるオルガノオキシシラン化合物との混合物で添加してもよい。
さらに、添加されるビニルシラン化合物およびこれとともに用いられるオルガノオキシシラン化合物は、反応前に予め還流脱気しておくことが好ましい。この還流脱気により、触媒の活性低下を防ぐことができ、使用する触媒量を低減したり、反応時間を短縮したりすることができる。
The process for producing the bissilylethylene compound of the present invention can be carried out by mixing the vinylsilane compound as the raw material, the organooxirane compound as the solvent, the ruthenium catalyst, and the cocatalyst used as needed in any order. In particular, it is preferable to carry out the reaction by adding a vinylsilane compound to a mixture of a ruthenium catalyst and an organooxysilane compound which is a solvent.
At this time, the vinylsilane compound may be added alone, or in order to keep the reaction temperature within a certain range, it may be added as a mixture of a vinylsilane compound and an organooxysilane compound which is a solvent.
Furthermore, it is preferable that the vinylsilane compound to be added and the organooxysilane compound to be used with this be previously subjected to reflux degassing before the reaction. This reflux degassing can prevent a decrease in the activity of the catalyst, and can reduce the amount of catalyst used or shorten the reaction time.
また、本発明の製造方法は、副生するエチレンを系外に除去するために、還流下で行うことが好ましい。
還流時の反応温度は、原料であるビニルシラン化合物の種類により変動するが、反応温度が200℃を超えると、触媒の活性が低下する場合があるので、200℃以下に保って還流させることが好ましく、特に、140〜180℃に保って還流させることが好ましい。
なお、上述したように、ビニルシラン化合物とともに溶媒であるオルガノオキシシラン化合物を添加して、反応温度が一定の範囲となるようにしてもよく、このようにすることで、反応温度の上昇による触媒の活性低下を効率的に防いだり、還流を保つために加熱を調整する作業を軽減したりすることができる。
Further, the production method of the present invention is preferably carried out under reflux in order to remove by-produced ethylene out of the system.
The reaction temperature at reflux varies depending on the type of the vinylsilane compound as the raw material, but if the reaction temperature exceeds 200 ° C., the activity of the catalyst may decrease, so it is preferable to keep the temperature at 200 ° C. or less to reflux. In particular, it is preferable to keep the temperature at 140 to 180 ° C. to reflux.
As described above, the reaction temperature may be in a certain range by adding an organooxysilane compound which is a solvent together with the vinylsilane compound, and in this way, the catalyst due to the increase of the reaction temperature It is possible to prevent the decrease in activity efficiently and to reduce the work of adjusting the heating to keep reflux.
一例を挙げると、ビニルトリエトキシシランの反応では、反応温度を150〜180℃に保って還流下で反応させることが好ましいが、この反応温度を保つ方法としては、テトラエトキシシランを溶媒として用いて、反応終了時の温度が180℃となる量のビニルトリエトキシシランを添加する方法が挙げられる。
さらに、上記反応温度を150〜165℃に保つ方法として、メチルトリエトキシシランとビス(トリエトキシシリル)エチレンとの混合液またはメチルトリエトキシシランとテトラエトキシシランとの混合液を溶媒として用い、ビニルトリエトキシシランとメチルトリエトキシシランとを添加して反応する方法や、メチルトリメトキシシランとビス(トリメトキシシリル)エチレンとの混合液を溶媒として用い、ビニルトリメトキシシランとメチルトリメトキシシランとを添加して反応する方法などが挙げられる。
As an example, in the reaction of vinyltriethoxysilane, it is preferable to keep the reaction temperature at 150 to 180 ° C. and make the reaction under reflux. As a method of keeping this reaction temperature, tetraethoxysilane is used as a solvent And a method of adding vinyltriethoxysilane in an amount such that the temperature at the end of the reaction becomes 180.degree.
Furthermore, as a method of keeping the above reaction temperature at 150 to 165 ° C., a mixed solution of methyltriethoxysilane and bis (triethoxysilyl) ethylene or a mixed solution of methyltriethoxysilane and tetraethoxysilane is used as a solvent, and vinyl is used. A method of reacting by adding triethoxysilane and methyltriethoxysilane, or using a mixed solution of methyltrimethoxysilane and bis (trimethoxysilyl) ethylene as a solvent, vinyltrimethoxysilane and methyltrimethoxysilane The method of adding and reacting is mentioned.
以下、実施例および比較例を挙げて本発明をより具体的に説明するが、本発明は下記の実施例に限定されるものではない。
なお、以下の反応率は、ガスクロマトグラフィー(GC−2014、(株)島津製作所製)を用いて測定した値である。
EXAMPLES The present invention will be more specifically described below with reference to examples and comparative examples, but the present invention is not limited to the following examples.
In addition, the following reaction rates are the values measured using gas chromatography (GC-2014, Shimadzu Corp. make).
[実施例1]
1Lの4つ口ガラスフラスコに、還流冷却器、温度計および撹拌機を取り付け、内部を窒素置換した。その中に、(3−フェニル−1H−インデン−1−イリデン)ビス(トリシクロヘキシルホスフィン)ルテニウムジクロリド(ユミコア社製、以下、「UmicoreM1触媒」という。)1.84g(2mmol)およびテトラエトキシシラン528.9gを仕込み、162〜178℃の反応温度かつ還流下で、ビニルトリエトキシシラン380.6g(2.0mol)を15時間かけて滴下し(途中でUmicoreM1触媒0.92g(1mmol)を追加した)、さらに、8時間、還流下で熟成した。
ビニルトリエトキシシランの反応率は95%以上であり、得られた反応液を減圧蒸留し、1,2−ビス(トリエトキシシリル)エチレン305.9g(0.868mol)を得た(収率:86.8%)。
Example 1
A 1 L four-necked glass flask was equipped with a reflux condenser, a thermometer and a stirrer, and the interior was purged with nitrogen. Among them, 1.84 g (2 mmol) of (3-phenyl-1H-indene-1-ylidene) bis (tricyclohexylphosphine) ruthenium dichloride (manufactured by Umicore, hereinafter referred to as “Umicore M1 catalyst”) and tetraethoxysilane 528 .9 g was charged, and 380.6 g (2.0 mol) of vinyltriethoxysilane was added dropwise over 15 hours under reflux at a reaction temperature of 162 to 178 ° C. (0.92 g (1 mmol) of Umicore M1 catalyst was added in the middle) ), And aged for 8 hours under reflux.
The reaction rate of vinyltriethoxysilane was 95% or more, and the obtained reaction liquid was distilled under reduced pressure to obtain 305.9 g (0.868 mol) of 1,2-bis (triethoxysilyl) ethylene (yield: 86.8%).
[実施例2]
2Lの4つ口ガラスフラスコに、還流冷却器、温度計および撹拌機を取り付け、内部を窒素置換した。その中に、UmicoreM1触媒1.11g(1.2mmol)とトリシクロヘキシルホスフィン63.7mg(2.4mmol)、およびメチルトリエトキシシラン242.4gと1,2−ビス(トリエトキシシリル)エチレン202.0gを仕込み、155〜160℃の反応温度かつ還流下で、ビニルトリエトキシシラン570.9g(3.0mol)とメチルトリエトキシシラン634.8gとの混合液を14時間かけて滴下し(途中で、UmicoreM1触媒0.56g(0.6mmol)を追加した)、さらに、8時間熟成した。
ビニルトリエトキシシランの反応率は95%以上であり、得られた反応液を減圧蒸留し、1,2−ビス(トリエトキシシリル)エチレン664.4gを得た。溶媒として用いた1,2−ビス(トリエトキシシリル)エチレンを考慮すると、反応で得られた1,2−ビス(トリエトキシシリル)エチレンは462.4g(1.31mol)であった(収率:87.4%)。
Example 2
A 2 L four-necked glass flask was fitted with a reflux condenser, a thermometer and a stirrer, and the interior was purged with nitrogen. Among them, 1.11 g (1.2 mmol) of Umicore M1 catalyst and 63.7 mg (2.4 mmol) of tricyclohexylphosphine, and 242.4 g of methyltriethoxysilane and 202.0 g of 1,2-bis (triethoxysilyl) ethylene A mixed solution of 570.9 g (3.0 mol) of vinyltriethoxysilane and 634.8 g of methyltriethoxysilane was added dropwise over 14 hours at a reaction temperature of 155 to 160 ° C. under reflux (in the middle, An additional 0.56 g (0.6 mmol) of Umicore M1 catalyst was added and aged for 8 hours.
The reaction rate of vinyltriethoxysilane was 95% or more, and the obtained reaction liquid was distilled under reduced pressure to obtain 664.4 g of 1,2-bis (triethoxysilyl) ethylene. In consideration of 1,2-bis (triethoxysilyl) ethylene used as a solvent, the amount of 1,2-bis (triethoxysilyl) ethylene obtained in the reaction was 462.4 g (1.31 mol) (yield 87.4%).
[実施例3]
2Lの4つ口ガラスフラスコに、還流冷却器、温度計および撹拌機を取り付け、内部を窒素置換した。その中に、UmicoreM1触媒1.11g(1.2mmol)とトリシクロヘキシルホスフィン63.7mg(2.4mmol)、およびメチルトリエトキシシラン141.5gとテトラエトキシシラン297.8gを仕込み、155〜160℃の反応温度かつ還流下で、ビニルトリエトキシシラン570.9g(3.0mol)とメチルトリエトキシシラン634.8gの混合液を18時間かけて滴下し(途中で、UmicoreM1触媒0.56g(0.6mmol)を追加した)、さらに、12時間熟成した。
ビニルトリエトキシシランの反応率は95%以上であり、得られた反応液を減圧蒸留し、1,2−ビス(トリエトキシシリル)エチレン457.7g(1.30mol)を得た(収率:86.5%)。
[Example 3]
A 2 L four-necked glass flask was fitted with a reflux condenser, a thermometer and a stirrer, and the interior was purged with nitrogen. Into it, 1.11 g (1.2 mmol) of Umicore M1 catalyst and 63.7 mg (2.4 mmol) of tricyclohexylphosphine and 141.5 g of methyltriethoxysilane and 297.8 g of tetraethoxysilane are charged, and the temperature is 155 to 160 ° C. A mixture of 570.9 g (3.0 mol) of vinyltriethoxysilane and 634.8 g of methyltriethoxysilane was added dropwise over 18 hours at a reaction temperature and under reflux (in the middle, 0.56 g (0.6 mmol of Umicore M1 catalyst) ) Added), and then aged for 12 hours.
The reaction rate of vinyltriethoxysilane was 95% or more, and the obtained reaction liquid was distilled under reduced pressure to obtain 457.7 g (1.30 mol) of 1,2-bis (triethoxysilyl) ethylene (yield: 86.5%).
[実施例4]
2Lの4つ口ガラスフラスコに、還流冷却器、温度計および撹拌機を取り付け、内部を窒素置換した。その中に、UmicoreM1触媒692.3mg(0.75mmol)とL−アスコルビン酸264.2mg(1.5mmol)、およびメチルトリエトキシシラン242.4gと1,2−ビス(トリエトキシシリル)エチレン202.0gを仕込み、155〜160℃の反応温度かつ還流下で、ビニルトリエトキシシラン570.9g(3.0mol)とメチルトリエトキシシラン634.8gとの混合液を16時間かけて滴下し、さらに12時間熟成した。
ビニルトリエトキシシランの反応率は95%以上であり、得られた反応液を減圧蒸留し、1,2−ビス(トリエトキシシリル)エチレン664.4gを得た。溶媒として用いた1,2−ビス(トリエトキシシリル)エチレンを考慮すると、反応で得られた1,2−ビス(トリエトキシシリル)エチレンは460.1g(1.30mol)であった(収率:87.0%)。
Example 4
A 2 L four-necked glass flask was fitted with a reflux condenser, a thermometer and a stirrer, and the interior was purged with nitrogen. Among them, 692.3 mg (0.75 mmol) of Umicore M1 catalyst and 264.2 mg (1.5 mmol) of L-ascorbic acid, and 242.4 g of methyltriethoxysilane and 1,2-bis (triethoxysilyl) ethylene 202. 0 g is charged, and a mixed solution of 570.9 g (3.0 mol) of vinyltriethoxysilane and 634.8 g of methyltriethoxysilane is added dropwise over 16 hours at a reaction temperature of 155 to 160 ° C. under reflux, and further 12 Aged over time.
The reaction rate of vinyltriethoxysilane was 95% or more, and the obtained reaction liquid was distilled under reduced pressure to obtain 664.4 g of 1,2-bis (triethoxysilyl) ethylene. In consideration of 1,2-bis (triethoxysilyl) ethylene used as a solvent, the amount of 1,2-bis (triethoxysilyl) ethylene obtained in the reaction was 460.1 g (1.30 mol) (yield : 87.0%).
[実施例5]
2Lの4つ口ガラスフラスコに、還流冷却器、温度計および撹拌機を取り付け、内部を窒素置換した。その中に、UmicoreM1触媒692.3mg(0.75mmol)とL−アスコルビン酸264.2mg(1.5mmol)、およびメチルトリエトキシシラン242.4gと1,2−ビス(トリエトキシシリル)エチレン202.0gを仕込み、155〜160℃の反応温度かつ還流下で、滴下前に1時間還流して脱気を行ったビニルトリエトキシシラン570.9g(3.0mol)とメチルトリエトキシシラン634.8gとの混合液を14時間かけて滴下し、さらに10時間熟成した。
ビニルトリエトキシシランの反応率は95%以上であり、得られた反応液を減圧蒸留し、1,2−ビス(トリエトキシシリル)エチレン667.4gを得た。溶媒として用いた1,2−ビス(トリエトキシシリル)エチレンを考慮すると、反応で得られた1,2−ビス(トリエトキシシリル)エチレンは465.4g(1.30mol)であった(収率:88.0%)。
[Example 5]
A 2 L four-necked glass flask was fitted with a reflux condenser, a thermometer and a stirrer, and the interior was purged with nitrogen. Among them, 692.3 mg (0.75 mmol) of Umicore M1 catalyst and 264.2 mg (1.5 mmol) of L-ascorbic acid, and 242.4 g of methyltriethoxysilane and 1,2-bis (triethoxysilyl) ethylene 202. Charge 0g, 570.9g (3.0 mol) of vinyltriethoxysilane and 634.8g of methyltriethoxysilane, which were degassed by refluxing for 1 hour before dropping under reaction temperature and reflux temperature of 155 to 160 ° C. The mixture was added dropwise over 14 hours and then aged for 10 hours.
The reaction rate of vinyltriethoxysilane was 95% or more, and the obtained reaction liquid was distilled under reduced pressure to obtain 667.4 g of 1,2-bis (triethoxysilyl) ethylene. In consideration of 1,2-bis (triethoxysilyl) ethylene used as a solvent, 465.4 g (1.30 mol) of 1,2-bis (triethoxysilyl) ethylene obtained in the reaction was obtained (yield : 88.0%).
[実施例6]
500mlの4つ口ガラスフラスコに、還流冷却器、温度計および撹拌機を取り付け、内部を窒素置換した。その中に、UmicoreM1触媒166.2mg(0.18mmol)、メチルトリエトキシシラン50.5gおよび1,2−ビス(トリエトキシシリル)エチレン60.6gを仕込み、156〜160℃の反応温度かつ還流下で、ビニルトリエトキシシラン34.5g(0.18mol)とメチルトリエトキシシラン38.4gとの混合液を2.5時間かけて滴下した。ビニルトリエトキシシランの反応率は94%であった。
[Example 6]
A 500 ml four-necked glass flask was fitted with a reflux condenser, a thermometer and a stirrer, and the interior was purged with nitrogen. Among them, 166.2 mg (0.18 mmol) of Umicore M1 catalyst, 50.5 g of methyltriethoxysilane and 60.6 g of 1,2-bis (triethoxysilyl) ethylene are charged, and the reaction temperature is 156 to 160 ° C. under reflux. Then, a mixed solution of 34.5 g (0.18 mol) of vinyltriethoxysilane and 38.4 g of methyltriethoxysilane was added dropwise over 2.5 hours. The conversion of vinyltriethoxysilane was 94%.
[比較例1]
200mlの4つ口ガラスフラスコに、還流冷却器、温度計および撹拌機を取り付け、内部を窒素置換した。その中に、UmicoreM1触媒332.4mg(0.36mmol)、o−キシレン34.3gを仕込み、144〜160℃の反応温度かつ還流下で、ビニルトリエトキシシラン68.5g(0.36mol)を8時間かけて滴下した。ビニルトリエトキシシランの反応率は10%であった。
Comparative Example 1
A 200 ml four-necked glass flask was fitted with a reflux condenser, a thermometer and a stirrer, and the interior was purged with nitrogen. Into it, 332.4 mg (0.36 mmol) of Umicore M1 catalyst and 34.3 g of o-xylene are charged, and 68.5 g (0.36 mol) of vinyltriethoxysilane is added at a reaction temperature of 144 to 160 ° C. under reflux. It dripped over time. The conversion of vinyltriethoxysilane was 10%.
[実施例7]
500mlの4つ口ガラスフラスコに、還流冷却器、温度計および撹拌機を取り付け、内部を窒素置換した。その中に、UmicoreM1触媒0.46g(0.5mmol)およびオクチルトリメトキシシラン100gを仕込み、138〜220℃の反応温度かつ還流下で、ビニルジメチルメトキシシラン116.2g(1.0mol)を5時間かけて滴下し、さらに5時間熟成した。
ビニルジメチルメトキシシランの反応率は96%以上であり、得られた反応液を減圧蒸留し、1,2−ビス(ジメチルメトキシシリル)エチレン84.8g(0.83mol)を得た(収率:83.0%)。
[Example 7]
A 500 ml four-necked glass flask was fitted with a reflux condenser, a thermometer and a stirrer, and the interior was purged with nitrogen. Into it, 0.46 g (0.5 mmol) of Umicore M1 catalyst and 100 g of octyltrimethoxysilane are charged, and 116.2 g (1.0 mol) of vinyldimethylmethoxysilane for 5 hours at a reaction temperature of 138 to 220 ° C. under reflux. The solution was added dropwise and aged for further 5 hours.
The reaction rate of vinyldimethylmethoxysilane was 96% or more, and the obtained reaction liquid was distilled under reduced pressure to obtain 84.8 g (0.83 mol) of 1,2-bis (dimethylmethoxysilyl) ethylene (yield: 83.0%).
[実施例8]
500mLの4つ口ガラスフラスコに、還流冷却器、温度計および撹拌機を取り付け、内部を窒素置換した。その中に、UmicoreM1触媒923.1mg(1mmol)、メチルトリメトキシシラン13.8g、および1,2−ビス(トリメトキシシリル)エチレン110.6gを仕込み、170〜180℃の反応温度かつ還流下で、ビニルトリメトキシシラン296.4g(2.0mol)とメチルトリメトキシシラン70.4gの混合液を36時間かけて滴下し、さらに10時間熟成した。
ビニルトリメトキシシランの反応率は95%以上であり、得られた反応液を減圧蒸留し、1,2−ビス(トリメトキシシリル)エチレン330.7gを得た。溶媒として用いた1,2−ビス(トリメトキシシリル)エチレンを考慮すると、反応により得られた1,2−ビス(トリエトキシシリル)エチレンは220.1g(0.82mol)であった(収率:82.0%)。
[Example 8]
A 500 mL four-necked glass flask was equipped with a reflux condenser, a thermometer and a stirrer, and the interior was purged with nitrogen. Into it, 923.1 mg (1 mmol) of Umicore M1 catalyst, 13.8 g of methyltrimethoxysilane, and 110.6 g of 1,2-bis (trimethoxysilyl) ethylene are charged, and the reaction temperature is 170 to 180 ° C. under reflux. A mixture of 296.4 g (2.0 mol) of vinyltrimethoxysilane and 70.4 g of methyltrimethoxysilane was added dropwise over 36 hours, and aging was further performed for 10 hours.
The reaction rate of vinyltrimethoxysilane was 95% or more, and the obtained reaction liquid was distilled under reduced pressure to obtain 330.7 g of 1,2-bis (trimethoxysilyl) ethylene. Considering 1,2-bis (trimethoxysilyl) ethylene used as a solvent, the amount of 1,2-bis (triethoxysilyl) ethylene obtained by the reaction was 220.1 g (0.82 mol) (yield : 82.0%).
Claims (7)
で表されるビニルシラン化合物を、溶媒中、ルテニウム触媒存在下で反応させる、下記一般式(2)
で表される1,2−ビスシリルエチレン化合物の製造方法であって、
前記溶媒として、オルガノオキシシラン化合物(ただし、式(1)のビニルシラン化合物は除く。)を用いることを特徴とする1,2−ビスシリルエチレン化合物の製造方法。 The following general formula (1)
The vinylsilane compound represented by the formula is reacted in the presence of a ruthenium catalyst in a solvent:
A process for producing a 1,2-bissilylethylene compound represented by
A method for producing a 1,2-bissilylethylene compound, wherein an organooxysilane compound (with the exception of the vinylsilane compound of the formula (1)) is used as the solvent.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016003554A JP6424840B2 (en) | 2016-01-12 | 2016-01-12 | Process for producing 1,2-bissilylethylene compound |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016003554A JP6424840B2 (en) | 2016-01-12 | 2016-01-12 | Process for producing 1,2-bissilylethylene compound |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2017124976A JP2017124976A (en) | 2017-07-20 |
JP6424840B2 true JP6424840B2 (en) | 2018-11-21 |
Family
ID=59365656
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2016003554A Active JP6424840B2 (en) | 2016-01-12 | 2016-01-12 | Process for producing 1,2-bissilylethylene compound |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP6424840B2 (en) |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4668812A (en) * | 1985-12-31 | 1987-05-26 | Union Carbide Corporation | Process for the preparation of olefinic silanes and siloxanes |
JPH04283589A (en) * | 1991-03-12 | 1992-10-08 | Rikagaku Kenkyusho | Production of vinyl silane compounds |
JP2001029794A (en) * | 1999-07-19 | 2001-02-06 | Takasago Internatl Corp | Ruthenium metathesis catalyst and method for producing olefin reaction product by metathesis reaction using the same |
-
2016
- 2016-01-12 JP JP2016003554A patent/JP6424840B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
JP2017124976A (en) | 2017-07-20 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN103588804B (en) | Dehydrosilylation and crosslinking using cobalt catalysts | |
JP6486925B2 (en) | Cobalt catalyst and its use for hydrosilylation and dehydrogenation silylation | |
CN108602840B (en) | High purity trisilylamine, preparation method and use | |
KR20140116100A (en) | Non-precious metal-based hydrosilylation catalysts | |
EP0263673A2 (en) | Addition reaction of hydrosilanes with unsaturated hydrocarbons | |
CA2025864C (en) | Removal of hydrogen-containing silanes from organosilane mixtures | |
WO2016024607A1 (en) | Hydrosilylation reaction catalyst | |
Igarashi et al. | Ir-catalyzed hydrosilylation reaction of allyl acetate with octakis (dimethylsiloxy) octasilsesquioxane and related hydrosilanes | |
Igarashi et al. | Selective hydrosilylation of allyl esters with octahydridosilsesquioxane | |
JP4821991B2 (en) | Method for producing 1- (alkoxysilyl) ethyl-1,1,3,3-tetramethyldisiloxane | |
WO2017126562A1 (en) | Novel isocyanide compound and hydrosilylation reaction catalyst | |
JP5640997B2 (en) | Method for producing organochlorosilane compound | |
JP6515930B2 (en) | Hydrosilylation catalyst | |
JP6424840B2 (en) | Process for producing 1,2-bissilylethylene compound | |
JP2004162036A (en) | Method of producing oxirane-containing organosilicone composition | |
JP2017520519A (en) | Dialkylcobalt catalysts and their use for hydrosilylation and dehydrogenation silylation | |
JP2021178786A (en) | Production method of dimethylchlorosilane compound | |
JP5141897B2 (en) | Method for producing chlorosilyl group-containing ethylnorbornene compound | |
KR20140093946A (en) | A method for preparing a diorganodihalosilane | |
CN101012237B (en) | Synthesis method of vinyl alkoxy silane | |
CN103992343A (en) | Preparation method of dimethylvinylchlorosilane | |
JPH09216890A (en) | Hydrosilylation of alkyne using cycloalkadiene as catalyst modifier | |
KR20220112277A (en) | Silirane functionalized compounds, especially organosilicon compounds for the preparation of siloxanes | |
CN112625058B (en) | Method for preparing monovinyl chlorosilane through disproportionation reaction of polyvinyl silane | |
JPH0521140B2 (en) |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20171121 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20180911 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20180925 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20181008 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6424840 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |