JP6419873B2 - 光デバイスおよびその製作のための方法 - Google Patents
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- 238000000034 method Methods 0.000 title claims description 49
- 238000004519 manufacturing process Methods 0.000 title claims description 11
- 239000002096 quantum dot Substances 0.000 claims description 169
- 238000009736 wetting Methods 0.000 claims description 65
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 claims description 47
- 239000000758 substrate Substances 0.000 claims description 39
- 229910000673 Indium arsenide Inorganic materials 0.000 claims description 31
- 230000015572 biosynthetic process Effects 0.000 claims description 14
- 238000002425 crystallisation Methods 0.000 claims description 12
- 230000008025 crystallization Effects 0.000 claims description 12
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- 238000002488 metal-organic chemical vapour deposition Methods 0.000 claims description 8
- 239000002019 doping agent Substances 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 193
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 37
- 238000010586 diagram Methods 0.000 description 25
- 229910052738 indium Inorganic materials 0.000 description 14
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 13
- 239000000463 material Substances 0.000 description 11
- 230000008569 process Effects 0.000 description 11
- 238000000407 epitaxy Methods 0.000 description 9
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 8
- 238000000089 atomic force micrograph Methods 0.000 description 8
- 230000005684 electric field Effects 0.000 description 6
- 230000004907 flux Effects 0.000 description 6
- 229910021478 group 5 element Inorganic materials 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
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- 238000001451 molecular beam epitaxy Methods 0.000 description 3
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- 238000012935 Averaging Methods 0.000 description 2
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02455—Group 13/15 materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/122—Single quantum well structures
- H01L29/127—Quantum box structures
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- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
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- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/10—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
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- H01L2933/0083—Periodic patterns for optical field-shaping in or on the semiconductor body or semiconductor body package, e.g. photonic bandgap structures
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- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/10—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
- H01L33/105—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector with a resonant cavity structure
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y10S977/774—Exhibiting three-dimensional carrier confinement, e.g. quantum dots
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y10S977/813—Of specified inorganic semiconductor composition, e.g. periodic table group IV-VI compositions
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- Y10S977/818—III-P based compounds, e.g. AlxGayIn2P
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y10S977/819—III-As based compounds, e.g. AlxGayInzAs
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y10S977/84—Manufacture, treatment, or detection of nanostructure
- Y10S977/89—Deposition of materials, e.g. coating, cvd, or ald
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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Description
前記量子ドットを支持する支持層と、前記支持層がInPに格子整合される、
を備える光デバイスが提供され、
ここにおいて、支持層と平行に規定された量子ドットの基部の最長寸法が、支持層と平行に規定された基部の最短寸法から20%以内にある。
支持層を形成することと、前記支持層がInPに格子整合される、
Inの層を形成することと、前記Inの量が、In液滴の形成を可能にするように制御される、
InAsドットを形成するために、前記In液滴の上にAsを成長させ、前記液滴を結晶化させることと
を備え、
ここにおいて、In液滴の形成と、結晶化とは、1200nmから2000nmの波長範囲で放射を放出するように構成された量子ドットを生成するように制御され、およびここにおいて、支持層と平行に規定された量子ドットの基部の最長寸法が、支持層と平行に規定された基部の最短寸法から20%以内にある。
図11は、図8の構造に基づくフォトニックキャビティ構造の概略図である。不必要な繰り返しを避けるために、同様の参照番号は同様のフィーチャを示すために使用される。光学キャビティ構造は、InP(100)基板401に成長され、続いて200nmInPバッファ403および一般に900nm厚のAlInGaAsまたはInGaAsP犠牲層505が成長される。次いで、キャビティの底部が成長され、413、それは、一般に、(n−1/2)*1/2ラムダ厚であり、InPで製作される。DQD417が成長される。415疑似ぬれ層は、V族元素交換の結果として直ちに形成されることに留意されたい。ドット417は、(2n+1)*1/4ラムダキャビティの残りの厚さを形成するInP419でキャップされ、ここで、nは整数である。
Claims (19)
- 量子ドットと、前記量子ドットがInAsを備え、1200nmから2000nmの波長範囲で放射を放出するように構成される、
前記量子ドットを支持する支持層と、前記支持層がInPに格子整合される、を備える光デバイスであって、
前記量子ドットの基部の最長寸法が、前記量子ドットの前記基部の最短寸法から20%以内にあり、前記量子ドットの前記基部は、前記支持層と平行に規定され、前記量子ドットの密度が1×10 9 cm −2 未満である、光デバイス。 - 前記量子ドットの微細構造分裂が50μeV以下である、請求項1に記載の光デバイス。
- (100)方位基板を備える、請求項1または2に記載の光デバイス。
- 前記支持層の上に重ねて設けられたぬれ層をさらに備える、請求項1から3のいずれか1項に記載の光デバイス。
- 前記支持層がInPまたはInGaAsPを備える、請求項4に記載の光デバイス。
- 前記ぬれ層がInAsPを備える、請求項5に記載の光デバイス。
- 前記支持層がAlInAsまたはAlInGaAsを備える、請求項1から4のいずれか1項に記載の光デバイス。
- 上部層が、前記量子ドットの上に重ねて設けられる、請求項1から7のいずれか1項に記載の光デバイス。
- 前記量子ドットの一方の側に設けられたnドープ領域と、前記量子ドットの他方の側のpドープ領域とを備えるLEDとして構成される、請求項1から8のいずれか1項に記載の光デバイス。
- フィルタをさらに備え、前記フィルタが、前記ぬれ層によって放出された放射をフィルタ処理するように構成される、請求項4に記載の光デバイス。
- キャビティ領域を備え、前記キャビティ領域が、前記量子ドットを収容し、前記量子ドットから放出された放射を前記キャビティ領域内で優先的に反射するように構成される、請求項1から10のいずれか1項に記載の光デバイス。
- 前記キャビティ領域が、前記キャビティ領域の一方の側に設けられた単一の分布ブラッグ反射器を備える非対称キャビティ領域である、請求項11に記載の光デバイス。
- 前記キャビティ領域が真性領域を備え、pドープ領域が前記量子ドットの一方の側に設けられ、前記量子ドットと前記pドープ領域との間の層の厚さが、p型ドーパントが前記光デバイスの成長温度で前記真性領域に拡散する距離よりも大きい、請求項11または12に記載の光デバイス。
- 前記支持層がパターン化され、前記量子ドットがパターン中の点に位置付けられる、請求項1に記載の光デバイス。
- 光デバイスを製作する方法であって、前記方法が、
支持層を形成することと、前記支持層がInPに格子整合される、
Inの層を形成することと、前記Inの量が、In液滴の形成を可能にするように制御される、
InAsドットを形成するために、前記In液滴の上にAsを成長させ、前記In液滴を結晶化させることとを備え、
前記In液滴の前記形成と、結晶化とは、1200nmから2000nmの波長範囲で放射を放出するように構成された量子ドットを生成するように制御され、前記量子ドットの基部の最長寸法が、前記量子ドットの前記基部の最短寸法から20%以内にあり、前記量子ドットの前記基部は、前記支持層と平行に規定され、前記量子ドットの密度が1×10 9 cm −2 未満である、光デバイスを製作する方法。 - 前記層がMOVPEまたはMBEを使用して形成される、請求項15に記載の光デバイスを製作する方法。
- 構造体が、MOVPEを使用して形成され、2MLのInが、前記In液滴を形成するために堆積される、請求項15に記載の光デバイスを製作する方法。
- 前記Asが前記In液滴の上に成長されるとき、成長温度が上げられる、請求項15に記載の光デバイスを製作する方法。
- 前記Asが成長された直後に、前記In液滴がキャップされる、請求項15から18のいずれか1項に記載の光デバイスを製作する方法。
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GB1606833.0 | 2016-04-19 | ||
GB1606833.0A GB2549703B (en) | 2016-04-19 | 2016-04-19 | An optical device and method for its fabrication |
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US6266357B1 (en) * | 1998-09-01 | 2001-07-24 | The United States Of America As Represented By The Secretary Of The Air Force | Microcavity surface emitting laser |
JP3415068B2 (ja) * | 1999-04-30 | 2003-06-09 | 理化学研究所 | 位置制御された液滴エピタキシーによる窒化物半導体の量子ドットの形成方法、量子コンピュータにおける量子ビット素子構造および量子相関ゲート素子構造 |
US6816525B2 (en) * | 2000-09-22 | 2004-11-09 | Andreas Stintz | Quantum dot lasers |
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DE102008036400B3 (de) * | 2008-08-01 | 2010-01-21 | Technische Universität Berlin | Photonenpaarquelle und Verfahren zu deren Herstellung |
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