JP6413108B2 - Manufacturing method of semiconductor cooling device - Google Patents

Description

  The present invention relates to a method for manufacturing a semiconductor cooling device that cools a semiconductor power device that is a switching element used for motor control of an electric vehicle and the like, and a semiconductor cooling device manufactured by the manufacturing method.

  Semiconductor power devices such as IGBT elements and power transistor elements generate a large amount of heat because a large current flows during switching. For this reason, it is necessary to cool the semiconductor element at the time of use, and many semiconductor cooling devices are conventionally known (for example, Patent Document 1).

  An example of such a semiconductor cooling device will be described with reference to FIG. FIG. 7 is a cross-sectional view of the semiconductor cooling device 23 that is a heat exchanger. As shown in FIG. 7, the semiconductor cooling device 23 includes a top cover 42 that is an upper case in which a plurality of heat radiation fins 29 (29 a and 29 b) are formed on the back surface side, and a main body having a concave portion 410 that is a lower case. The container part 41 is manufactured by being closed at the upper lid attaching parts 411 and 411 and friction stir joined by the rotary tool 52.

JP 2009-135477 A

  However, in such a semiconductor cooling device, when the friction stir welding is performed, the pressing load F applied to the member to be joined by the rotary tool 52 is formed on the back surface side of the upper lid portion 42 that is the upper case. Since it is transmitted to the main body container portion 41 which is the lower case through the heat radiation fins 29a, there is a problem that the lower case 41 is deformed at the time of manufacture as shown by a two-dot chain line in FIG.

  That is, when performing friction stir welding, a large pressing load F is applied to the upper lid attaching portions 411 and 411 by the rotary tool 52. The pressing load F is transmitted as a pressing load Fa to the radiating fin 29 through the inside of the upper lid portion 42 as indicated by a dotted arrow in FIG. Further, as the pressing load Fb indicated by the dotted arrow, the tip of the radiating fin 29 is transmitted through the inside of the radiating fin 29a in contact with the bottom surface portion 28b of the main body container portion 41, and the bottom surface portion 28b is shown in FIG. Push down toward the bottom of the paper. Therefore, the bottom surface portion 28b of the main body container portion 41 is pushed and deformed by the radiation fins 29a, and there is a possibility that the predetermined performance as the semiconductor cooling device cannot be exhibited.

  In order to solve the above-described problems, a manufacturing method of a semiconductor cooling device of the present invention includes a container-shaped member forming step of forming a container-shaped member having a concave portion serving as a coolant flow path, and a plurality of heat radiation fins on the back surface. A plate-like member forming step for forming a plate-like member; a groove-forming step for forming a groove portion extending along a projecting position of the radiation fin at an edge of the surface of the plate-like member; and the plate-like member Removing the groove by cutting the surface of the plate-like member, a closing step of closing the vessel-like member by, a joining step of joining the plate-like member and the container-like member by friction stir welding, and And a cutting process for forming an abutting surface against which the heat-generating semiconductor abuts.

  According to the method for manufacturing a semiconductor cooling device of the present invention, the groove formed on the surface of the plate-like member is generated by the pressed rotary tool when the plate-like member and the container-like member are joined by friction stir welding. Since it acts as a damper region that absorbs the pressing load, the transmission of the pressing load in the plate-like member is relaxed, and it becomes difficult to be transmitted to the radiation fin formed on the back surface of the plate-like member. Therefore, since the pressing load transmitted to the bottom surface portion that forms the concave portion of the container-like member via the radiation fin is reduced, it is possible to prevent the semiconductor cooling device from being deformed when the friction stir welding is performed.

It is a perspective view of the semiconductor cooling device concerning the example of the present invention. FIG. 2 is an exploded perspective view of FIG. 1. FIG. 2 is a cross-sectional view of a position where an elastic member is in pressure contact in FIG. It is a perspective view which shows a mode that the member is joined by friction stir welding. It is a figure explaining the manufacturing method of the semiconductor cooling device which concerns on this invention, (a) is a figure explaining a container-shaped member formation process. (B) is a figure explaining a plate-shaped member formation process. (C) is a figure explaining a groove part formation process. (D) is a figure explaining a closing process. (E) is a figure explaining a joining process. (F) is a figure explaining a cutting process. It is a figure explaining the modification of the Example of this invention, (a) is the example which formed the groove part which has a semicircle shaped cross section. (B) is an example in which a groove having a triangular cross section is formed. (C) is the example which formed the intermittent groove part. It is sectional drawing explaining the problem of the conventional friction stir welding.

  Hereinafter, specific embodiments of a method for manufacturing a semiconductor cooling device of the present invention will be described with reference to the drawings.

1 and 2 are perspective views showing a semiconductor cooling structure 21 according to an embodiment of the present invention. First, the overall configuration of the semiconductor cooling structure 21 will be described with reference to FIGS.
[Description of overall configuration]

  As shown in the perspective view of FIG. 1 and the exploded perspective view of FIG. 2, the semiconductor cooling structure 21 includes a power module 22 in which at least one heat generating semiconductor 22 a (semiconductor) is accommodated, and a lower surface of the power module 22. A lower semiconductor cooling device 23 (semiconductor cooling device) disposed in contact with the upper side, an upper semiconductor cooling device 24 disposed in contact with the upper surface of the power module 22, and an upper portion of the upper semiconductor cooling device 24. A load receiving plate 25 and an elastic member 26 provided on the upper surface side of the load receiving plate 25 and capable of pressing the upper semiconductor cooling device 24 against the upper surface of the power module 22 via the load receiving plate 25. . For example, a power device represented by an IGBT element or a power transistor element is used as the heat generating semiconductor 22a.

  FIG. 3 is a cross-sectional view of the semiconductor cooling structure 21 shown in FIG. 1 as viewed from the direction of arrow A at the position where the elastic member 26 is in pressure contact.

  As shown in FIG. 3, the lower semiconductor cooling device 23 (semiconductor cooling device) includes a lower cooling device main body 28 (container-like member) having a concave portion 410 serving as a coolant flow path 27 therein. A coolant inlet 23a (FIG. 1 or 2) communicating with the coolant flow path 27 is provided at one end side of the lower cooling device body 28, and the coolant flow path 27 is provided at the other end side of the lower cooling device body 28. A coolant outlet 23b (FIG. 2) is provided in communication with the coolant. A contact surface 28 a on which the power module 22 can be placed in contact is provided on the upper surface of the lower cooling device main body 28. In addition, a plurality of parallel radiation fins 29 (29a, 29b) extending along the coolant flow path 27 are provided on the back surface side of the contact surface 28a.

  As shown in FIG. 3, the front end portion of the radiating fin 29 a provided near the center in the width direction of the upper lid portion 42 (plate-like member) is the radiating fin 29 b provided near the left and right ends in the width direction of the upper lid portion 42. The lower end of the main body container 41 (container-like member) is in contact with the bottom surface 28b. That is, a slight gap 28 c is provided between the front end portion of the heat radiation fin 29 b near the left and right ends in the width direction of the upper lid portion 42 and the bottom surface portion 28 b of the lower cooling device main body 28.

  In this manner, the front end portion of the heat dissipating fin 29a near the center in the width direction of the upper lid portion 42 is brought into contact with the bottom surface portion 28b of the main body container portion 41 (container-like member), so The module 22 and the lower semiconductor cooling device 23 (semiconductor cooling device) can be reliably brought into contact with each other, whereby a high cooling effect of the power module 22 can be obtained.

  In addition, the coolant flow paths 27 in the lower part of the upper lid portion 42 in the vicinity of the left and right ends in the width direction are communicated with each other in the width direction of the lower semiconductor cooling device 23 (semiconductor cooling device). By promoting this heat transfer, it is possible to obtain a higher cooling efficiency than when the heat radiation fins 29 are completely isolated and the heat transfer in the width direction of the lower semiconductor cooling device 23 is suppressed.

  1 and 2 again, the power module 22 is a plate-like body having a rectangular shape in plan view and including three heat generating semiconductors 22a (semiconductors). Note that the number of the exothermic semiconductors 22a is not limited to three.

  The lower semiconductor cooling device 23 (semiconductor cooling device) and the upper semiconductor cooling device 24 cover the entire surface of the power module 22 so as to obtain a sufficient cooling effect. It is a rectangular shape in plan view that is larger than the extent.

  The lower semiconductor cooling device 23 (semiconductor cooling device) and the upper semiconductor cooling device 24 are directly fastened and fixed using a fastener 31 (FIG. 1 or 2) such as a bolt. In the present embodiment, the fasteners 31 are attached to four corner portions of the lower semiconductor cooling device 23 and the upper semiconductor cooling device 24. In addition, the attachment position of the fastener 31 is not restricted to this.

  Then, the cooling liquid L (FIG. 1 or 2) supplied from the cooling liquid inlet 23a provided on one end side of the lower semiconductor cooling device 23 (semiconductor cooling device) passes through the inside of the lower semiconductor cooling device 23 in one end in the longitudinal direction. Flows from the side to the other end side, is discharged from the coolant outlet 23b provided on the other end side of the lower semiconductor cooling device 23, and is also supplied to the coolant inlet 24a provided on the other end side of the upper semiconductor cooling device 24 (FIG. 2) enters the inside of the upper semiconductor cooling device 24, flows inside the upper semiconductor cooling device 24 from the other end side to one end side, and is provided with a coolant outlet 24b provided on one end side of the upper semiconductor cooling device 24 (FIG. 1). Or it is comprised so that it may discharge | emit from FIG. That is, the upper semiconductor cooling device 24 is also of a liquid cooling type like the lower semiconductor cooling device 23.

  A seal member 32 (FIG. 2) or a sealable connection is provided between the coolant outlet 23b on the other end of the lower semiconductor cooling device 23 and the coolant inlet 24a on the other end of the upper semiconductor cooling device 24. A member is provided. That is, the lower semiconductor cooling device 23 (semiconductor cooling device) and the upper semiconductor cooling device 24 are connected so that a continuous flow of the cooling liquid L is formed.

  In addition, the load receiving plate 25 described above has a rectangular shape in plan view that is one or more times larger than the power module 22 so that the entire surface of the power module 22 can be pressed.

The elastic member 26 is formed in a strip shape extending in the width direction of the upper semiconductor cooling device 24, and a pressing portion 26a (FIG. 1 or 2) capable of partially pressing the load receiving plate 25 at an intermediate portion thereof. It has at least one. The elastic member 26 is fastened and fixed to a mounting portion 33 integrally fixed to the side surface of the lower semiconductor cooling device 23 (semiconductor cooling device) using fasteners 34 such as bolts. The elastic member 26 is provided at least in one place with respect to the longitudinal direction of the upper semiconductor cooling device 24. In this embodiment, it is provided at two positions between the three heat generating semiconductors 22a (semiconductors).
[Description of friction stir welding]

  As shown in FIG. 3, the lower cooling device main body 28 of the lower semiconductor cooling device 23 (semiconductor cooling device) has at least a main body container portion 41 (container-like member) having a concave portion 410 that constitutes the lower portion of the coolant channel 27. ) And a contact surface 28a on the front surface, and a plurality of radiating fins 29 (29a, 29b) on the back surface, provided on the upper edge of the concave portion 410 of the main body container portion 41 (container-like member). The upper lid mounting portion 411 having a step portion having a wall thickness d0 has an upper lid portion 42 (plate-like member) that can be closed and fixed by friction stir welding.

  The upper lid part 42 (plate-like member) configures the upper part of the coolant channel 27 by closing the concave part 410. Moreover, the upper cover part 42 (plate-shaped member) is used as a heat transfer promoting member by having a contact surface 28a on the front surface and a plurality of heat radiation fins 29 (29a, 29b) on the back surface. The upper lid attaching portion 411 is a stepped portion that can attach the upper lid portion 42 (plate-like member) in a flush state to the upper surface of the main body container portion 41 (container-like member). The main body container portion 41 (container-like member) and the upper lid portion 42 (plate-like member) are capable of friction stir welding and are made of a metal having high thermal conductivity, such as aluminum or copper.

  Here, friction stir welding, which is a processing method when the main body container portion 41 (container-like member) is closed by the upper lid portion 42 (plate-like member), will be described with reference to FIG. As shown in FIG. 4, friction stir welding (FSW for short) is performed on members 53 and 54 to be joined while rotating a cylindrical rotary tool 52 having a protruding probe 51 at the tip. By pressing with a strong force and fitting the probe 51 into the joint portion 55 of the members 53 and 54, frictional heat is generated to soften the members 53 and 54, and the periphery of the joint portion 55 by the rotational force of the rotary tool 52. This is a joining method in which the members 53 and 54 are integrated while plastically flowing and kneading. Further, the joining portions 55 of the members 53 and 54 are integrated by performing joining while moving the rotary tool 52 along the joining portions 55 of the members 53 and 54.

In this embodiment, the boundary portion between the upper lid attaching portion 411 of the main body container portion 41 (container-like member) and the upper lid portion 42 (plate-like member) attached to the upper lid attaching portion 411 is joined by friction stir welding. Is closed.
[Description of Manufacturing Method of Semiconductor Cooling Device]

Next, a manufacturing method of the lower semiconductor cooling device 23 (semiconductor cooling device) of the present embodiment will be described with reference to FIGS. 5 (a) to 5 (f).
(Container-shaped member forming process)

First, as shown in FIG. 5A, a main body container portion 41 (container-like member) having a concave portion 410 to be the coolant flow path 27 (FIG. 3) is formed by die casting. The thickness d of the upper lid attaching portions 411 and 411 is formed so as to be thicker than the final thickness d0 (FIG. 3) when the main body container portion 41 is formed.
(Plate-shaped member forming process)

Next, as shown in FIG. 5B, a plurality of heat radiation fins 29 (29a, 29b) are formed on the back surface side of the upper lid portion 42 (plate member) by extrusion molding. At this time, the thickness d of the upper lid portion 42 is formed to be thicker than the thickness d0 (FIG. 3) of the upper lid portion 42 of the lower semiconductor cooling device 23 (FIG. 3) to be finally formed. The
(Groove formation process)

  Next, as shown in FIG. 5 (c), a groove portion 42a having an angular cross section extending along the protruding position of the radiation fins 29 (29a, 29b) on the outer peripheral edge portion of the surface of the upper lid portion 42 (plate-like member). , 42b. The groove portions 42a and 42b are formed on the surface side of the region where the radiation fins 29b are formed in the upper lid portion 42 (plate-like member). The grooves 42a and 42b may be formed by extrusion molding at the same time as the radiation fins 29 (29a and 29b) or have the radiation fins 29 (29a and 29b) in the plate member forming process described above. After forming the plate-like member, it may be formed separately by cutting.

The depth h of the grooves 42a and 42b is relative to the thickness d of the upper lid portion 42 and the thickness d0 (FIG. 3) of the upper lid portion 42 of the lower semiconductor cooling device 23 (FIG. 3) to be finally formed. , H <d−d0.
(Closing process)

Next, as shown in FIG. 5D, the upper lid portion 42 (plate-like member) in which the groove portions 42a and 42b are formed is fitted into the upper lid attaching portions 411 and 411 of the main body container portion 41 (container-like member). Close with.
(Joining process)

Then, as shown in FIG. 5 (e), using the rotary tool 52, friction stir welding is performed along the upper lid attaching portions 411 and 411, and the upper lid portion 42 (plate member) and the main body container portion 41 (container-like shape). Member). In this way, the lower semiconductor cooling device 30a (23) is formed.
(Cutting process)

Finally, as shown in FIG. 5 (f), the cutting portion 43 including the groove portions 42a and 42b of the lower semiconductor cooling device 30a (23) is removed by surface cutting, and the upper lid portion 42 (plate-like member) is optimized. In addition to the thickness d0, a planar contact surface 28a on which the power module 22 (FIGS. 1 and 2) can be placed in contact is formed. In this way, the lower semiconductor cooling device 30b (23) is formed. The lower semiconductor cooling device 30b formed in this way is used as the lower semiconductor cooling device 23 (semiconductor cooling device) described with reference to FIGS.
[Explanation of groove function]

  Here, the operation of the groove portions 42a and 42b formed on the surface of the upper lid portion 42 will be described with reference to FIG.

  The pressing load F applied to the upper lid attaching portions 411 and 411 by the processing by friction stir welding is transmitted to the radiating fin 29 through the inside of the upper lid portion 42 (plate member), but in the middle of the transmission path. Since the groove portions 42a and 42b are formed, the pressing load F is transmitted to the groove portions 42a and 42b and acts to deform the groove portions 42a and 42b.

  Accordingly, the load transmitted beyond the groove portions 42a and 42b toward the vicinity of the center in the width direction of the upper lid portion 42 (plate member) is reduced. As a result, the load transmitted to the heat dissipating fins 29a near the center in the width direction of the upper lid portion 42 (plate-like member) is reduced, so the load transmitted to the bottom surface portion 28b of the main body container portion 41 (container-like member) is reduced. And the deformation | transformation of the bottom face part 28b of the main body container part 41 (container-shaped member) is prevented. That is, in this embodiment, the groove portions 42a and 42b act as a damper region that absorbs and reduces the pressing load F.

  Thus, in order to relieve the pressing load F transmitted to the radiating fin 29a, the grooves 42c and 42d are provided in the region where the radiating fin 29b is formed.

In addition, the magnitude | size of the pressing load F which can be absorbed changes by changing the width | variety and depth of the groove parts 42a and 42b to form. That is, a larger pressing load F can be absorbed by increasing the width of the groove portions 42a and 42b or increasing the depth of the groove portions 42a and 42b. However, if the groove portions 42a and 42b having a large width and depth are formed, the strength of the upper lid portion 42 (plate-like member) is reduced, and the upper lid portion 42 (plate-like member) may be damaged during processing by friction stir welding. Therefore, the width and depth of the groove portions 42a and 42b depend on the thickness and strength of the upper lid portion 42 (plate member) and the processing conditions for friction stir welding (for example, the magnitude of the input pressing load F). Accordingly, an appropriate value is set.
[Description of Modified Example of Embodiment 1]

  Next, a modification of the first embodiment will be described with reference to FIGS. 6 (a) to 6 (c). FIG. 6A shows an example in which grooves 42c and 42d having a semicircular cross section are formed instead of the grooves 42a and 42b having a square cross section. As described above, the grooves 42c and 42d are provided in the region where the heat radiating fins 29b are formed.

  FIG. 6B shows an example in which groove portions 42e and 42f having a triangular cross section are formed instead of the groove portions 42a and 42b having a square cross section. The groove portions 42e and 42f are also provided in the region where the radiation fins 29b are formed.

  Even when the groove portions 42c to 42f having a cross-sectional shape other than the square cross section are formed as described above, the effect of reducing the transmission of the pressing load F to the radiating fin 29a can be expected. The same effect as the case where 42b is formed is produced. The specific cross-sectional shape of the groove portion includes the thickness and strength of the upper lid portion 42 (plate-like member), the friction stir welding processing conditions (the magnitude of the input pressing load F, and the probe 51 (FIG. 4)). An appropriate cross-sectional shape may be selected according to the size and the like.

  Furthermore, in Example 1, although the groove parts 42a and 42b were continuously formed along the longitudinal direction of the upper cover part 42 (plate-shaped member), as shown in FIG.6 (c), this is shown in FIG. Even if the intermittent groove portions 42g and 42h having intermittent groove portions along the longitudinal direction of the plate-like member) are formed, a damper region that receives and absorbs the pressing load F (FIG. 5A) can be configured. Therefore, an effect of relaxing the pressing load F that transmits the inside of the upper lid portion 42 can be expected.

  As described above, according to the manufacturing method of the lower semiconductor cooling device 23 (30b) (semiconductor cooling device) according to the first embodiment, the groove portions 42a and 42b formed on the surface of the upper lid portion 42 (plate member) are provided. In order to act as a damper region that absorbs the pressing load F generated by the pressed rotary tool 52 when the upper lid portion 42 (plate-like member) and the main body container portion 41 (container-like member) are friction stir welded, The transmission of the pressing load F in the upper lid portion 42 (plate-like member) is alleviated, and is difficult to be transmitted to the radiation fins 29 (29a) formed on the back surface of the upper lid portion 42 (plate-like member). Therefore, since the pressing load Fb transmitted to the bottom surface portion 28b forming the concave portion 410 of the main body container portion 41 (container-like member) via the heat radiation fin 29 (29a) is reduced, the lower semiconductor cooling at the time of performing the friction stir welding is performed. Deformation of the device 23 (30b) (semiconductor cooling device) can be prevented. Thereby, since the quality difference of the lower semiconductor cooling device 23 (30b) becomes small, a yield becomes high and the production efficiency of a semiconductor cooling device can be improved.

  Further, according to the lower semiconductor cooling device 23 (30b) (semiconductor cooling device) manufactured by the manufacturing method of the first embodiment, since deformation during the manufacturing of the lower semiconductor cooling device 23 (30b) is prevented, cooling is performed. Variations in performance can be reduced.

  Furthermore, according to the lower semiconductor cooling device 23 (30b) (semiconductor cooling device) according to the first embodiment, at least some of the radiating fins 29a among the radiating fins 29 (29a, 29b) have the tip portions of the main body container. Since it abuts against the bottom surface portion 28b of the portion 41 (container-like member), it can withstand the pressure contact by the elastic member 26, and the power module 22 and the lower semiconductor cooling device 23 (30b) are securely abutted to increase the height of the power module 22. A cooling effect can be obtained. In addition, by communicating the portions below the tips of some of the radiating fins 29b with each other, heat transfer in the width direction of the lower semiconductor cooling device 23 (semiconductor cooling device) is promoted. Higher cooling efficiency can be obtained as compared with the case where the gap is completely isolated and heat transfer in the width direction of the lower semiconductor cooling device 23 (30b) is suppressed.

  In Example 1, the positions (distances from the upper lid attaching portion 411) of the grooves 42a and 42b formed in the upper lid portion 42 (plate member) are the material and thickness of the upper lid portion 42 (plate member) to be processed. An appropriate value is set in consideration of the material and thickness of the main body container portion 41 and the processing conditions for friction stir welding (the magnitude of the input pressing load F, etc.).

  In the first embodiment, the example in which the two-pass semiconductor cooling structure 21 is configured using the lower semiconductor cooling device 23 and the upper semiconductor cooling device 24 has been described. However, the manufacture of the semiconductor cooling device according to the present invention is described. The semiconductor cooling device manufactured by the method can be similarly applied to other cooling structures such as a 4-pass system.

  Although the embodiments of the present invention have been described in detail with reference to the drawings, the embodiments are only examples of the present invention, and the present invention is not limited to the configurations of the embodiments. Needless to say, design changes and the like within a range not departing from the gist of the invention are included in the present invention.

23, 30a, 30b Lower semiconductor cooling device (semiconductor cooling device)
28a Contact surface 28b Bottom part 29, 29a, 29b Radiation fin 41 Main body container part (container-like member)
42 Upper lid (plate-shaped member)
42a, 42b Groove 43 Cutting site 52 Rotating tool 410 Recessed portion 411 Upper lid mounting portion F Pressing load d, d0 Thickness h Depth

Claims (1)

A container-shaped member forming step of forming a container-shaped member having a concave portion serving as a coolant flow path;
A plate-shaped member forming step for forming a plate-shaped member having a plurality of heat radiation fins on the back surface;
A groove forming step of forming a groove extending along the protruding position of the heat dissipating fin at the edge of the surface of the plate-like member;
A closing step of closing the container-like member by the plate-like member;
A joining step of joining the plate-like member and the container-like member by friction stir welding;
And removing the groove by cutting the surface of the plate-like member, a method of manufacturing a semiconductor cooling device comprising: a cutting step, the forming the abutment surface heating type semiconductor is contact.