JP6394466B2 - Substrate processing equipment - Google Patents

Description

  The present invention relates to a substrate processing apparatus for processing a substrate using active species obtained by converting a processing gas into plasma.

  In general, in order to manufacture a semiconductor product, a film processing such as ALD (Atomic Layer Deposition) or CVD (Chemical Vapor Deposition) is performed on a semiconductor wafer (hereinafter referred to as a wafer). This film forming process may be performed in a batch type vertical heat treatment apparatus that processes a plurality of wafers at the same time. In this case, for example, the wafers are transferred to a vertical wafer boat, and are multi-staged in a shelf shape. To support. Then, after the wafer boat is loaded (loaded) into a processing container in which a vacuum atmosphere is formed, the wafer boat is rotated by a rotating mechanism and laterally directed from the gas supply unit disposed on the side of the wafer boat toward the wafer. A processing gas is supplied to form a film. The apparatus may be provided with a plasma forming chamber for converting a gas supplied from a gas supply unit into plasma and supplying radicals as active species to the wafer.

  By the way, the miniaturization of the pattern formed on the wafer is progressing, and thereby the surface area of the wafer tends to increase. When a wafer having such a large surface area is formed using radicals as described above, most of the radicals are consumed at the peripheral edge of the wafer. That is, it becomes difficult for radicals to be supplied to the central portion of the wafer, and as a result, the thickness of the central portion of the wafer is smaller than that of the peripheral portion, resulting in low uniformity of the thickness of the wafer W. There is a concern that

  It can be considered to increase the radical supply time to increase the amount of radical supply to the center of the wafer, but this reduces the productivity of the apparatus. In addition, it is conceivable to increase the amount of radicals generated by increasing the amount of processing gas supplied from the gas supply unit. In this case, the pressure of the atmosphere in which radicals are generated increases to increase radicals. May collide with each other and become easily deactivated.

  In the apparatus described in Patent Document 1, two plasma forming chambers in which gas supply units are respectively arranged are provided. Each plasma forming chamber is provided with an antenna for generating inductively coupled plasma that extends in a vertical direction while meandering. One end of each antenna is connected to each other, and the other end of each antenna is connected to a high-frequency power source. However, according to such a configuration, since the high-frequency propagation path formed by each antenna is long, the potential difference may increase at each part of the antenna, thereby causing abnormal discharge and damaging the peripheral edge of the wafer. There is a risk of receiving.

JP2015-12275A

  The present invention has been made under such circumstances, and the purpose thereof is to arrange a plurality of substrates in a shelf shape in a processing container and perform processing in a lump in the surface of the substrate with high uniformity. And providing a technique capable of suppressing damage to the substrate due to plasma.

The substrate processing apparatus of the present invention, a vertical processing container in which a plurality of substrates are arranged in a shelf,
An exhaust mechanism for evacuating the processing vessel to form a vacuum atmosphere;
A first plasma formation chamber and a second plasma chamber are formed in a vertical direction so as to swell outward along the side wall of the processing container and spaced apart from each other in the circumferential direction of the processing container. A plasma forming chamber;
A first gas supply unit and a second gas supply unit, which are arranged in a first plasma formation chamber and a second plasma formation chamber, respectively, for supplying a processing gas to each of the plurality of substrates;
In order to generate plasma in the first plasma formation chamber and the second plasma formation chamber, which is provided along the vertical direction between the first plasma formation chamber and the second plasma formation chamber outside the processing vessel. A common conductor for both plasma forming chambers;
And a high-frequency power source connected to both ends of the conductor.

  According to the present invention, the first plasma forming chamber, the second plasma forming chamber, the first plasma forming chamber, the first plasma forming chamber, and the first plasma forming chamber that are inflated toward the outside of the processing container and are provided apart from each other in the circumferential direction of the processing container. Between the two plasma forming chambers, which are provided along the vertical direction, and are shared by both plasma forming chambers in order to generate plasma in the first plasma forming chamber and the second plasma forming chamber. And are provided. According to such a configuration, since the active species of the processing gas can be generated in the first plasma forming chamber and the second plasma forming chamber, respectively, the amount of active species supplied to the substrate is insufficient. Can be prevented. As a result, it is possible to prevent the uniformity of processing in the plane of the substrate from being lowered. Moreover, since the length of the said conductor can be restrained compared with the case where a conductor is separately provided with respect to each plasma formation chamber, generation | occurrence | production of abnormal discharge by the potential difference of each part of a conductor is suppressed. As a result, it is possible to suppress the substrate from being damaged.

It is a vertical side view of the vertical heat processing apparatus which concerns on embodiment of this invention. It is a cross-sectional plan view of a vertical heat treatment apparatus. It is a schematic perspective view which shows the structure of the antenna provided in a vertical heat processing apparatus. It is a schematic diagram which shows the electric field formed in a vertical heat processing apparatus. It is a schematic diagram which shows the electric field formed in a vertical heat processing apparatus. It is a timing chart which shows supply / disconnection of the gas in a vertical heat processing apparatus. It is explanatory drawing which shows the other example of arrangement | positioning of the electrically-conductive member in a vertical heat processing apparatus. It is a schematic block diagram of the apparatus of the comparative example used by an evaluation test. It is a graph which shows the result of an evaluation test. It is a graph which shows the result of an evaluation test. It is a graph which shows the result of an evaluation test.

  A vertical heat treatment apparatus 1 according to an embodiment of the present invention will be described with reference to FIGS. 1 and 2 which are a longitudinal side view and a transverse plan view. A vertical heat treatment apparatus 1 that is an embodiment of a substrate processing apparatus is a film forming apparatus that forms a SiN (silicon nitride) film on a wafer W by ALD. In the figure, reference numeral 11 denotes a processing container formed of, for example, quartz in a vertical cylindrical shape, and the upper side in the processing container 11 is sealed with a ceiling plate 12. Further, a manifold 2 formed in a cylindrical shape, for example, is connected to the lower end side of the processing container 11. The lower end of the manifold 2 is opened as a substrate loading / unloading port 21 and is configured to be airtightly closed by a quartz lid body 23 provided in the boat elevator 22. A rotation shaft 24 is provided through the central portion of the lid 23, and a wafer boat 3 as a substrate holder is mounted on the upper end portion of the rotation shaft 24.

  As shown in FIG. 2, the wafer boat 3 includes, for example, three support columns 31, and supports the outer edge portion of the wafer W to hold a plurality of, for example, 125 wafers W in a shelf shape. ing. Hereinafter, in the wafer boat 3, an area where the wafer W is held is referred to as a slot. That is, the wafer boat 3 has a large number of slots in the vertical direction.

  In the figure, 32 is a heat insulating unit. The boat elevator 22 is configured to be movable up and down by a lifting mechanism (not shown). In this way, the wafer boat 3 is loaded (loaded) into the processing container 11, the processing position where the substrate loading / unloading port 21 of the processing container 11 is blocked by the lid 23, and the unloading of the processing container 11 below. It can be moved up and down between positions. The unloading position is a position where the wafer W is transferred to the wafer boat 3 by a transfer mechanism provided in a loading area (not shown). The rotating shaft 24 is configured to be rotatable around a vertical axis by a motor 25 that forms a rotating mechanism provided on the lid body 23. As the wafer boat 3 rotates, the wafers W placed on the wafer boat 3 rotate around the center.

  Openings 13 and 14 are formed in the side wall of the processing vessel 11, and the plasma generation unit 4 is provided outside the openings 13 and 14. The openings 13 and 14 are, for example, vertically moved from a position higher than the upper end of the wafer boat 3 to a position lower than the lower wafer W so that the active species generated in the plasma generating section 4 can be supplied to each wafer W. And are formed so as to be parallel to each other. The openings 13 and 14 are closed from the outside by plasma forming boxes 41 and 42 that constitute the plasma generating part 4 whose cross section is formed in a concave shape. Therefore, the plasma forming boxes 41 and 42 form a side wall of the processing container 11, and the side wall swells toward the outside of the processing container 11. Further, the plasma forming boxes 41 and 42 are spaced apart from each other in the circumferential direction of the processing container 11 and are disposed close to each other. The plasma forming boxes 41 and 42 which are plasma forming chambers are made of quartz. A further configuration of the plasma generator 4 will be described later.

  In the region of the processing container 11 that faces the openings 13 and 14, a vertically elongated exhaust port 15 is formed to evacuate the atmosphere in the processing container 11. An exhaust cover member 16 having a U-shaped cross section made of quartz, for example, is attached to the exhaust port 15 so as to cover it. The exhaust cover member 16 extends, for example, vertically along the side wall of the processing container 11 and is configured to cover the upper side of the processing container 11. For example, a gas outlet 17 is provided on the ceiling side of the exhaust cover member 16. Is formed. The gas outlet 17 is connected to an exhaust mechanism 18 constituted by a vacuum pump and an adjusting unit for adjusting the exhaust flow rate.

  A ceiling-shaped cylindrical shield 19 is provided so as to surround the outer periphery of the processing container 11. The shield 19 is made of metal and grounded, and shields the electric field generated by the plasma generator 4. Further, a heater (not shown) is provided on the inner surface of the shield 19 so that the inside of the processing container 11 can be heated.

A dichlorosilane gas supply path 51 for supplying a silane-based gas such as dichlorosilane (DCS: SiH ₂ Cl ₂ ) is inserted into the side wall of the manifold 2. A gas nozzle 52 is provided. The gas nozzle 52 is made of, for example, a quartz tube, and is provided so as to extend upward along the side wall of the processing container 11 at a position facing the exhaust port 15 and deviating from the openings 13 and 14. A plurality of gas discharge holes 53 are formed in the gas nozzle 52 at predetermined intervals along the length direction.

Further, on the side wall of the manifold 2, each end of ammonia gas supply paths 61 and 62 for supplying ammonia (NH ₃ ) gas and nitrogen gas for supplying nitrogen (N ₂ ) gas into the processing container 11 are provided. One end of the supply path 55 is inserted. Gas nozzles 63 and 64 made of, for example, quartz tubes are provided at the tip of the ammonia gas supply path 61. In FIG. 1, the ammonia gas supply path 62 and the gas nozzle 64 are shown in order to prevent the drawing from becoming complicated. Omitted. The gas nozzles 63 and 64 which are gas supply units are configured in the same manner, bend in the middle of extending in the processing container 11 upward, and extend upward in the plasma forming boxes 41 and 42, respectively. . A plurality of gas discharge holes 65 are formed in the gas nozzles 63 and 64 at predetermined intervals along the length direction.

The upstream side of the dichlorosilane gas supply path 51 is connected to the DCS gas supply source 54 through the valve V1 and the flow rate adjustment unit MF1 in this order. The upstream side of the ammonia gas supply path 61 is connected to the NH ₃ gas supply source 66 through the valve V2 and the flow rate adjustment unit MF2 in this order. The upstream side of the ammonia gas supply path 62 is connected between the flow rate adjustment unit MF2 in the ammonia gas supply path 61 and the NH ₃ gas supply source 66 via the valve V3 and the flow rate adjustment unit MF3 in this order ( (See FIG. 2). The upstream side of the nitrogen gas supply path 55 is connected to the N ₂ gas supply source 56 through the valve V4 and the flow rate adjustment unit MF4 in this order. Each valve V performs gas supply / cutoff, and the flow rate adjusting unit MF adjusts the gas supply amount.

  Next, the plasma generator 4 will be further described. In describing the plasma generation unit 4, the side close to the wafer W is referred to as a front side, and the side far from the wafer W is referred to as a rear side. Inside the plasma forming boxes 41 and 42 which are plasma generation units, the NH 3 gas is disposed on the rear side of the gas nozzles 63 and 64 and discharges NH 3 gas toward the front side. If a vertically long region sandwiched between the plasma forming boxes 41 and 42 outside the processing vessel 11 is defined as a hollow region 43, the hollow region 43 includes a plasma forming box 41 as shown in the schematic diagram of FIG. , 42 are provided so as to extend in the vertical direction from the lower end portion to the upper end portion of the plasma forming boxes 41, 42. This antenna is formed so as to meander repeatedly forward and backward while extending in the vertical direction, and is hereinafter referred to as a meandering antenna 44.

  Further, a rod-shaped conductive member 45 is vertically provided outside the hollow region 43, and the plasma forming box 41 is sandwiched from the left and right by the rod-shaped conductive member 45 and the meandering antenna 44. The upper end of the rod-like conductive member 45 is folded back and connected to the upper end of the meandering antenna 44. That is, when viewed from the plasma forming box 41, the rod-shaped conductive member 45 is provided so as to be routed toward an area opposite to the indented area 43 and bend further downward.

  One end of a conductive path 46 is connected to the lower end portion of the meandering antenna 44, and the other end of the conductive path 46 is drawn to the outside of the shield 19 and connected to a high frequency power supply 48 via a matching circuit 47 (see FIG. 1). That is, the conductive path 46 is drawn out of the surrounding member from the lower side of the meandering antenna 44.

  Further, the lower end of the rod-shaped conductive member 45 is formed so as to extend outside the hollow region 43 to the lower side of the meandering antenna 44 and is connected to one end of the conductive path 49. The other end of the conductive path 49 is drawn to the outside of the shield 19 and branches via the matching circuit 47. One end of the branch is grounded, and the other end branched is connected to the high frequency power supply 48. Therefore, the high frequency power supply 48 is connected to both ends of the meandering antenna 44, and the high frequency power supply 48 can apply a high frequency power of, for example, 13.56 MHz to the meandering antenna 44.

In the cross-sectional plan view of FIG. 4, the electric field is schematically indicated by a dotted arrow, and in the side view of FIG. 5 by a chain line arrow. The electric field is formed to spread from the meandering antenna 44 around the meandering antenna 44. Since the plasma forming boxes 41 and 42 are close to each other, the NH ₃ gas discharged from the gas nozzles 63 and 64 to the front side of the plasma forming boxes 41 and 42 by the electric field is contained in the boxes 41 and 42 shown in FIG. Inductively coupled plasma is generated in the plasma forming regions PS1 and PS2. Various radicals such as ammonia radicals are generated, and these radicals are supplied to the wafer W.

  Thus, the meandering antenna 44 forms an electric field in the plasma forming boxes 41 and 42 together. That is, it is shared by the plasma forming boxes 41 and 42. In order to form an electric field in the plasma forming boxes 41 and 42 as described above, the distance between the plasma forming boxes 41 and 42 shown in FIG. 2 (the width of the hollow region 43) L1 is preferably 30 mm or less. In this example, it is 10 mm. Further, in this example, the plasma forming boxes 41 and 42 are formed symmetrically with each other when viewed from the meandering antenna 44, and therefore, an electric field having the same strength is formed in the plasma forming boxes 41 and 42, Plasma is formed between the plasma forming boxes 41 and 42 with high uniformity. Therefore, the uneven distribution of the active species supplied into the processing container 11 is suppressed, and the processing uniformity within the surface of the wafer W is increased.

  The plasma forming antenna provided in the depression region 43 is not limited to the meandering antenna 44, and for example, a coiled antenna may be disposed. By the way, the reason why the rod-like conductive member 45 is arranged outside the hollow region 43 is to make the distance from the meandering antenna 44 relatively large. Specifically, if the distance between the meandering antenna 44 and the rod-shaped conductive member 45 is too short, a strong electric field is formed between the antenna 44 and the conductive member 45, causing abnormal discharge, and the wafer W is damaged. In order to prevent this, the rod-like conductive member 45 is provided at the above position.

  Further, a vertical bar-shaped conductive member 40 is provided in the depression region 43 on the front side of the meandering antenna 44. The conductive member 40 is grounded and blocks an electric field from the meandering antenna 44 toward the wafer W, thereby preventing the wafer W from being damaged by the electric field. In FIG. 3, the conductive member 40 is not shown.

  The vertical heat treatment apparatus 1 includes a control unit 5. The control unit 5 is composed of, for example, a computer, and the temperature of the heater of the boat elevator 22 and the shield 19, the amount of gas supplied by the flow rate adjusting unit MF, the on / off of the high frequency power supply, the amount of exhaust by the exhaust mechanism 18, the rotating shaft 24 by the motor 25 It is comprised so that rotation etc. may be controlled. More specifically, the control unit 5 stores a sequence program for executing a series of processing steps to be described later performed in the processing container 11, reads out the instructions of each program, and outputs a control signal to each unit It has means to do. The program is stored in the control unit 5 in a state of being stored in a storage medium such as a hard disk, a flexible disk, a compact disk, a magnetic optical disk (MO), or a memory card.

  Subsequently, a film forming process performed in the vertical heat treatment apparatus 1 will be described. This description will be made with reference to FIG. 6 which is a timing chart showing the timing of the supply of each gas and the on / off timing of the high-frequency power supply 48. First, a large number of wafers W are placed on the wafer boat 3 in a shelf shape, and loaded into the processing container 11 from below, and the substrate loading / unloading port 21 is closed with the lid 23 to seal the processing container 11. To do. Then, the inside of the processing container 11 is evacuated by the exhaust mechanism 18 so as to obtain a vacuum atmosphere at a predetermined pressure, and the temperature in the processing container 11 is heated to a predetermined temperature. Further, the wafer boat 3 is rotated by the motor 25.

Thereafter, DCS gas is supplied into the processing chamber 11 by the gas nozzle 52 with the high frequency power supply 48 turned off, and molecules of the DCS gas are adsorbed on the surface of each wafer W. Thereafter, the supply of DCS gas is stopped, N2 gas is supplied into the processing vessel 11, and the remaining DCS gas is purged. Next, the supply of N ₂ gas is stopped and the discharge of NH 3 gas from the gas nozzles 63 and 64 is started. Further, the high frequency power supply 38 is turned on with the start of the discharge of the NH 3 gas. As a result, the NH ₃ gas discharged from the gas nozzles 63 and 64 is ionized in the plasma forming regions PS1 and PS2 in the plasma forming boxes 41 and 42, and N radicals, H radicals, NH radicals, NH2 radicals, NH3 radicals are ionized. Various active species such as

  Since NH3 gas, which is a plasma forming gas, is supplied to each of the plasma forming regions PS1 and PS2 in this way, it is possible to suppress an excessive increase in pressure in one plasma forming region PS. Therefore, these radicals are supplied to the wafer W in a state in which deactivation due to mutual collision is suppressed. Therefore, a relatively large amount of radicals is supplied to the wafer W. In addition to the formation of a SiN film by nitriding DCS at the peripheral portion of the wafer W by the radicals, radicals that cannot be consumed at the peripheral portion reach the central portion of the wafer W, and the DCS is also generated at the central portion. Nitriding forms a SiN film. That is, the SiN film is formed with high uniformity within the surface of the wafer W.

  Thereafter, the supply of NH 3 gas is stopped, N 2 gas is supplied into the processing container 11, and NH 3 gas remaining in the processing container 11 and its decomposition products are purged. Such a cycle of DCS gas supply, purge, NH3 gas active species supply, and purge is repeated a plurality of times. As a result, the thin film of the SiN film is stacked and grown on the surface of the wafer W, so that a SiN film having a desired thickness is formed on the surface of the wafer W. After the process is completed, the wafer boat 3 is unloaded from the processing container 11.

According to the vertical heat treatment apparatus 1, the meandering antenna 44 shared by the plasma forming boxes 41 and 42 for forming the plasma forming regions PS1 and PS2 is provided in the vertical direction in the hollow region 43 between the boxes 41 and 42. The bar-shaped conductive member 45 connected to the meandering antenna 44 via the upper end of the box 41 is provided in the vertical direction at a position away from the recessed region 43. As a result, the length of the high-frequency propagation path formed by the meandering antenna 44 is suppressed, and the occurrence of abnormal discharge is suppressed, while plasma is formed in the plasma formation regions PS1 and PS2, and active species are supplied to the wafer W. it can. Therefore, damage to the wafer W due to abnormal discharge can be suppressed. In addition, since a relatively large amount of NH ₃ gas can be supplied to the processing vessel 11 while suppressing an increase in the pressure in the plasma formation regions PS1 and PS2 as described above, radicals that are many active species Can be supplied to the wafer W. Therefore, even if the surface area of the wafer W is relatively large, radicals can be supplied from the peripheral part to the center part of the wafer W, so that the in-plane uniformity of the SiN film formed on the wafer W is increased. be able to.

By the way, the fact that a large number of radicals can be supplied to the wafer W as described above can shorten the time required for supplying the radical when processing the wafer W having a relatively small surface area. That is, it is possible to shorten the time for supplying NH ₃ gas (time for supplying radicals) in one cycle of the ALD described above. In addition, the fact that a large number of radicals are supplied to the wafer W in one cycle increases the amount of film formed per cycle. Accordingly, the number of cycles for obtaining a SiN film having a desired thickness can be reduced. As described above, according to the vertical heat treatment apparatus 1, it is possible to shorten the radical supply time in one cycle or reduce the number of cycles. Therefore, the productivity of the apparatus can be improved by shortening the time required for the film forming process.

  The position at which the rod-like conductive member 45 forming the conductive path is not limited to the above example, and is drawn downward from the upper end of the meandering antenna 44 to the outside of the hollow region 43 so as to pass above the plasma forming box 42. The plasma forming box 42 may be disposed so as to sandwich the meandering antenna 44 from the left and right. Further, the end of the rod-like conductive member 45 connected to the upper end of the meandering antenna 44 branches off, and the branched both ends are opposite to the depression region 43 in the plasma formation box 41 and the depression in the second plasma formation box 42. It may be configured to be routed to any side opposite to the region 43.

  Further, the rod-like conductive member 45 may be disposed on the rear side of the meandering antenna 44 as shown in FIG. By arranging in this way, an electric field with higher uniformity can be formed on the left and right when viewed from the meandering antenna 44. Therefore, the amounts of radicals supplied from the plasma formation regions PS1 and PS2 to the wafer W are aligned with each other, and the wafer With W, film formation with high uniformity can be performed. In this case, however, the distance between the antenna 44 and the conductive member 45 needs to be set appropriately so that abnormal discharge does not occur between the meandering antenna 44 and the rod-shaped conductive member 45. As shown, for example, the rod-shaped conductive member 45 is disposed outside the recessed region 43. Although not shown in FIG. 7, the shield 19 covering the processing container 11 is formed to be relatively large so as not to interfere with the bar-like conductive member 45 arranged in this way. That is, according to the arrangement of the rod-like conductive member 45 described with reference to FIGS. 1 to 3 described above, there is an advantage that an increase in the size of the vertical heat treatment apparatus 1 can be prevented. In addition, if the hollow area | region 43 is long back and forth, the rod-shaped electrically-conductive member 45 will not necessarily be arrange | positioned on the outer side of the hollow area | region 43. FIG.

  By the way, the conductive path 46 connected to the high frequency power supply 48 as described above is drawn out of the shield 19 which is a surrounding member from the lower side of the antenna. The lower side of the antenna is below the lower end of the antenna. This means that both the same height position as the lower end and the vicinity of the height position are included.

  Here, the case where the SiN film is formed has been described as an example, but the type of film formed in the present invention is not particularly limited. Although the plasma ALD process has been described as an example of the plasma process here, the present invention is not limited to this, and all plasmas such as plasma CVD process, plasma modification process, plasma oxidation diffusion process, plasma sputtering process, and plasma nitridation process are used. The present invention can be applied to these processes. By the way, the plasma formed in the plasma formation regions PS1 and PS2 by providing the meandering antenna 44 as described above is theoretically inductively coupled plasma as described above. However, it is also conceivable that the meandering antenna 44 that is a conductor and the shield 19 that is a conductor function as electrodes, and the plasma formed in the plasma forming regions PS1 and PS2 is capacitively coupled plasma.

Evaluation Test An evaluation test performed in connection with the present invention will be described. In this evaluation test, the vertical heat treatment apparatus 1 described above and the vertical heat treatment apparatus 7 which is an apparatus of a comparative example of the present invention were used. FIG. 8 shows a schematic view of the vertical heat treatment apparatus 7. The vertical heat treatment apparatus 7 is a vertical heat treatment apparatus except that the plasma forming box 42, the ammonia gas supply path 62, and the gas nozzle 64 are not provided. 1 is configured. That is, in this vertical heat treatment apparatus 7, only one plasma forming region is provided. Also in FIG. 8, the electric field is schematically displayed by a chain line arrow as in FIG. 5.

(Evaluation Test 1)
A quadrupole mass spectrometer was connected to the exhaust passage connecting the gas outlet 17 and the exhaust mechanism 18 in the vertical heat treatment apparatuses 1 and 7 so that the mass of the gas component in the exhaust passage could be measured. And NH3 gas was supplied to the processing container 11 of each apparatus 1 and 7, the pressure in the said processing container 11 was set to 34.7 Pa (0.260 Torr), the high frequency power supply 48 was turned on, and plasma was formed. Measurement with the above-mentioned mass spectrometer was performed during the plasma formation. The power supplied from the high frequency power supply 48 was set to the same value for both the devices 1 and 7. Then, from the obtained spectrum, m / z = 2, that is, the size of the peak indicating the amount of hydrogen was observed.

FIG. 9 is a graph showing the results of Evaluation Test 1. The vertical axis of the graph indicates the size of the above peak, and the numerical unit is an arbitrary unit. As shown in the graph, the measured value of the device 1 is larger than the measured value of the device 7. That is, the device 1 has a larger hydrogen detection amount. Since hydrogen gas is not supplied into the processing vessel 11 during the test, the amount of hydrogen detected corresponds to the amount of active species generated by the decomposition of NH ₃ gas. That is, a large amount of H ₂ detected means that many radicals necessary for nitriding are generated. Therefore, in this evaluation test 1, it was confirmed that the apparatus 1 can supply more radicals to the wafer W than the apparatus 7.

  By the way, as shown in FIG. 8, when viewed from the rear side of the meandering antenna 44, the vertical heat treatment apparatus 7 forms plasma using only one of the electric fields generated on the left and right sides of the meandering antenna 44. In the vertical heat treatment apparatus 1, plasma is formed by using both electric fields as shown in FIG. That is, the vertical heat treatment apparatus 1 is an apparatus that uses an electric field more effectively than the vertical heat treatment apparatus 7, and uses the electric field more effectively in this way, so that the consumption required for processing per wafer W is required. This has an advantageous effect on the device 7 that power can be reduced.

(Evaluation test 2)
A bare wafer having no pattern, that is, no irregularities formed on its surface, was mounted in each slot of the wafer boat 3, and ALD was performed using the vertical heat treatment apparatus 1 according to the procedure described in the embodiment to form a SiN film. This film forming process is referred to as an evaluation test 2-1. Moreover, the film-forming process was performed on the conditions similar to the evaluation test 2-1, except having processed using the vertical heat processing apparatus 7 instead of the vertical heat processing apparatus 1. FIG. This film forming process is referred to as an evaluation test 2-2. In the evaluation test 2-1, NH ₃ gas was discharged from the gas nozzles 63 and 64 at ₃ L / min. In the evaluation test 2-2, NH ₃ gas was discharged from the gas nozzle 63 at 6 L / min. That is, the total flow rates of NH 3 gas supplied into the processing container 11 are equal to each other.

Further, the film forming process is performed using the vertical heat treatment apparatuses 1 and 7 under the same conditions as those in the evaluation tests 2-1 and 2-2 except that the wafer on which the pattern is formed is mounted in each slot of the wafer boat 3. Went. The outer shape of the wafer on which this pattern is formed is the same size as the outer shape of the bare wafer, but the surface area is five times the surface area of the bare wafer because the pattern is formed. The obtained wafer is made a 5-fold pattern wafer. Then, the film formation process performed using the vertical heat treatment apparatus 1 on the 5-fold pattern wafer is evaluated in Test 2-3, and the film formation process performed using the vertical heat treatment apparatus 7 is evaluated in Test 2-4. And About each wafer formed into these evaluation tests 2-1 to 2-4, the film thickness of 31 SiN films including the center of a wafer was measured. And about the evaluation tests 2-1 and 2-2, the average value of the said measured value was computed for every wafer. Further, for the evaluation tests 2-3 and 2-4, an index representing the uniformity of the film thickness within the surface of the wafer W was calculated by the following formula 1. The maximum value, minimum value, and average value of the film thickness in Equation 1 are values measured from the same wafer surface.
In-plane uniformity index (unit: ±%) = (maximum value of film thickness−minimum value of film thickness) / average value of film thickness × 100 Expression 1

  The graphs of FIG. 10 and FIG. 11 show the results of this evaluation test 2. The vertical axis of each graph indicates the average value (unit: Å) of the calculated film thickness. The horizontal axis of each graph represents the slot number of the wafer boat 3, and the smaller the number, the higher the slot in the wafer boat 3. The graph of FIG. 10 shows the results of evaluation tests 2-1 and 2-2, and the graph of FIG. 11 shows the results of evaluation tests 2-3 and 2-4.

  From the graph of FIG. 10, when comparing the film thickness of the wafer W of the evaluation test 2-1 and the film thickness of the wafer W of the evaluation test 2-2 in the same slot, the evaluation test 2-1 is more in all slots. The film thickness is large. Therefore, from the results of the evaluation tests 2-1 and 2-2, it is considered that the apparatus 1 can supply a larger amount of radicals to the wafer than the apparatus 7.

  From the graph of FIG. 11, when the value of the evaluation test 2-3 in the same slot and the value of the evaluation test 2-4 are compared with respect to the above in-plane uniformity index, the evaluation test 2-3 is more in all slots. Low. That is, the evaluation test 2-3 has higher in-plane uniformity of the film thickness of the wafer W. The reason for this was that the film thickness at the central portion of the wafer W was larger in the evaluation test 2-3 than in the evaluation test 2-4. Therefore, according to the apparatus 1, even when the surface area of the wafer is large, radicals can be supplied to the center of the wafer, and the effect of the present invention that the in-plane uniformity of the film thickness can be increased has been confirmed.

W Wafer 1 Vertical heat treatment apparatus 11 Processing vessel 2 Manifold 3 Wafer boat 4 Plasma generating part 41, 42 Plasma forming box 44 Meandering antenna 45 Rod-like conductive member 48 High frequency power supply 63, 64 Gas nozzle

Claims (5)

A vertical processing container in which a plurality of substrates are arranged in a shelf, and
An exhaust mechanism for evacuating the processing vessel to form a vacuum atmosphere;
A first plasma formation chamber and a second plasma chamber are formed in a vertical direction so as to swell outward along the side wall of the processing container and spaced apart from each other in the circumferential direction of the processing container. A plasma forming chamber;
A first gas supply unit and a second gas supply unit, which are arranged in a first plasma formation chamber and a second plasma formation chamber, respectively, for supplying a processing gas to each of the plurality of substrates;
In order to generate plasma in the first plasma formation chamber and the second plasma formation chamber, which is provided along the vertical direction between the first plasma formation chamber and the second plasma formation chamber outside the processing vessel. A common conductor for both plasma forming chambers;
A substrate processing apparatus comprising: a high frequency power source connected to both ends of the conductor. A conductive path connected to the upper end of the conductor is routed to the outside of a hollow region, which is a region between the first plasma forming chamber and the second plasma forming chamber, and is further bent downward. It is wired so as to extend to the lower side of the conductor outside the recessed area,
2. The substrate processing apparatus according to claim 1, wherein the conductive path connected to the lower end of the conductor is routed from a lower side of the conductor to a high frequency power source. A metal enclosure member provided so as to surround the processing vessel, and a heater provided on the inner surface side of the enclosure member for heating the inside of the treatment vessel,
The conductive path connected to the upper end of the conductor is routed to a region opposite to the recessed region in either the first plasma forming chamber or the second plasma forming chamber, and further bent downward. And drawn out of the surrounding member from the lower side of the conductor,
The substrate processing apparatus according to claim 2, wherein the conductive path connected to the lower end of the conductor is drawn out of the surrounding member from a lower side of the conductor.   The substrate processing apparatus according to claim 1, wherein the conductor is formed to meander and extend in a vertical direction.   The substrate processing apparatus according to claim 1, wherein a distance between the first plasma forming chamber and the second plasma forming chamber is 30 mm or less.

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