JP6390823B2 - Switching power supply - Google Patents

Switching power supply Download PDF

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JP6390823B2
JP6390823B2 JP2018522445A JP2018522445A JP6390823B2 JP 6390823 B2 JP6390823 B2 JP 6390823B2 JP 2018522445 A JP2018522445 A JP 2018522445A JP 2018522445 A JP2018522445 A JP 2018522445A JP 6390823 B2 JP6390823 B2 JP 6390823B2
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switching
circuit
frequency
input
current
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JPWO2017213029A1 (en
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祐樹 石倉
祐樹 石倉
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Murata Manufacturing Co Ltd
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    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00—Conversion of dc power input into dc power output
    • H02M3/22—Conversion of dc power input into dc power output with intermediate conversion into ac
    • H02M3/24—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters
    • H02M3/28—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac
    • H02M3/325—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal
    • H02M3/335—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only
    • H02M3/33569—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only having several active switching elements
    • H02M3/33576—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only having several active switching elements having at least one active switching element at the secondary side of an isolation transformer
    • H02M3/33584—Bidirectional converters
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00—Conversion of dc power input into dc power output
    • H02M3/01—Resonant DC/DC converters
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00—Conversion of dc power input into dc power output
    • H02M3/22—Conversion of dc power input into dc power output with intermediate conversion into ac
    • H02M3/24—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters
    • H02M3/28—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00—Conversion of dc power input into dc power output
    • H02M3/22—Conversion of dc power input into dc power output with intermediate conversion into ac
    • H02M3/24—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters
    • H02M3/28—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac
    • H02M3/325—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal
    • H02M3/335—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only
    • H02M3/33507—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of the output voltage or current, e.g. flyback converters
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00—Conversion of dc power input into dc power output
    • H02M3/22—Conversion of dc power input into dc power output with intermediate conversion into ac
    • H02M3/24—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters
    • H02M3/28—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac
    • H02M3/325—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal
    • H02M3/335—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only
    • H02M3/33569—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only having several active switching elements
    • H02M3/33571—Half-bridge at primary side of an isolation transformer
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00—Conversion of dc power input into dc power output
    • H02M3/22—Conversion of dc power input into dc power output with intermediate conversion into ac
    • H02M3/24—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters
    • H02M3/28—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac
    • H02M3/325—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal
    • H02M3/335—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only
    • H02M3/33569—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only having several active switching elements
    • H02M3/33573—Full-bridge at primary side of an isolation transformer
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00—Conversion of dc power input into dc power output
    • H02M3/22—Conversion of dc power input into dc power output with intermediate conversion into ac
    • H02M3/24—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters
    • H02M3/28—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac
    • H02M3/325—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal
    • H02M3/335—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only
    • H02M3/33569—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only having several active switching elements
    • H02M3/33576—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only having several active switching elements having at least one active switching element at the secondary side of an isolation transformer
    • H02M3/33592—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only having several active switching elements having at least one active switching element at the secondary side of an isolation transformer having a synchronous rectifier circuit or a synchronous freewheeling circuit at the secondary side of an isolation transformer
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00—Conversion of dc power input into dc power output
    • H02M3/22—Conversion of dc power input into dc power output with intermediate conversion into ac
    • H02M3/24—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters
    • H02M3/28—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac
    • H02M3/325—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal
    • H02M3/335—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only
    • H02M3/337—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only in push-pull configuration
    • H02M3/3376—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only in push-pull configuration with automatic control of output voltage or current
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/0003—Details of control, feedback or regulation circuits
    • H02M1/0009—Devices or circuits for detecting current in a converter
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/0048—Circuits or arrangements for reducing losses
    • H02M1/0054—Transistor switching losses
    • H02M1/0058—Transistor switching losses by employing soft switching techniques, i.e. commutation of transistors when applied voltage is zero or when current flow is zero
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
    • H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
    • H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
    • H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M7/4815—Resonant converters
    • H02M7/4818—Resonant converters with means for adaptation of resonance frequency, e.g. by modification of capacitance or inductance of resonance circuits
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
    • Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Dc-Dc Converters (AREA)
  • Inverter Devices (AREA)

Description

本発明は、ＬＬＣ共振回路を含むスイッチング電源装置に関する。   The present invention relates to a switching power supply device including an LLC resonant circuit.

発電機、例えばソーラパネル、で発電された電力を家庭環境で使用する太陽光発電システムでは、パワーコンディショナにより電力制御される。このパワーコンディショナに好適に用いられる電力変換装置として、例えば特許文献１に記載のものがある。特許文献１に記載の電力変換装置は、電流共振コンバータを備えている。そして、スイッチング周波数を変化して最大電力変換効率となるスイッチング周波数を測定することで、電流共振コンバータの共振周波数と一致するスイッチング周波数を検知し、それを設定している。これにより、スイッチングロス及びノイズを低減して高効率化を図っている。   In a solar power generation system that uses electric power generated by a generator, such as a solar panel, in a home environment, power control is performed by a power conditioner. As a power converter suitably used for this power conditioner, there exists a thing of patent document 1, for example. The power conversion device described in Patent Literature 1 includes a current resonance converter. And the switching frequency which corresponds to the resonant frequency of a current resonance converter is detected and measured by changing the switching frequency and measuring the switching frequency which becomes the maximum power conversion efficiency. Thereby, switching loss and noise are reduced and high efficiency is achieved.

特開２０１４−２１７１９９号公報JP 2014-217199 A

特許文献１の電力変換装置では、トランスの漏れインダクタンス、共振コンデンサのキャパシタンスが設計値からずれ、それにより共振周波数が設計値からずれても、最適なスイッチング周波数を設定できる。しかしながら、特許文献１は、電力変換効率が最大化するようにスイッチング周波数を設定しているため、入出力電力の制限が行なわれている場合など、所定の条件を満たす場合でなければ、スイッチング周波数を設定することができない。   In the power converter of Patent Document 1, even if the leakage inductance of the transformer and the capacitance of the resonant capacitor deviate from the design value, and the resonance frequency deviates from the design value, an optimum switching frequency can be set. However, since the switching frequency is set so that power conversion efficiency is maximized in Patent Document 1, the switching frequency is not satisfied unless a predetermined condition is satisfied, such as when input / output power is limited. Cannot be set.

そこで、本発明の目的は、最適なスイッチング周波数を探索するスイッチング電源装置を提供することにある。   Therefore, an object of the present invention is to provide a switching power supply device that searches for an optimum switching frequency.

本発明に係るスイッチング電源装置は、第１入出力ポート及び第２入出力ポートと、ハイサイドスイッチ素子及びローサイドスイッチ素子を有し、前記第１入出力ポートに接続される第１スイッチング回路と、ハイサイドスイッチ素子及びローサイドスイッチ素子を有し、前記第２入出力ポートに接続される第２スイッチング回路と、磁気結合する第１コイル及び第２コイルを有し、前記第１コイルが前記第１スイッチング回路に接続され、前記第２コイルが前記第２スイッチング回路に接続されたトランスと、前記第１コイル又は前記第２コイルを含んで構成される共振回路と、前記第１スイッチング回路及び前記第２スイッチング回路のスイッチング周波数を設定するスイッチング周波数設定部と、前記第１入出力ポート又は前記第２入出力ポートに入出力される電流を検出する電流検出部と、を備え、前記スイッチング周波数設定部は、スイッチング周波数を掃引し、前記第１スイッチング回路又は前記第２スイッチング回路の前記ハイサイドスイッチ素子と前記ローサイドスイッチ素子とのスイッチングのデッドタイムを開始するタイミングと、前記電流検出部の検出結果と、閾値電流値とに基づいて、スイッチング周波数を設定することを特徴とする。   A switching power supply according to the present invention includes a first input / output port, a second input / output port, a high-side switch element and a low-side switch element, and a first switching circuit connected to the first input / output port; A second switching circuit having a high-side switch element and a low-side switch element; connected to the second input / output port; and a first coil and a second coil that are magnetically coupled, wherein the first coil is the first coil A transformer connected to a switching circuit, wherein the second coil is connected to the second switching circuit; a resonance circuit including the first coil or the second coil; the first switching circuit; A switching frequency setting unit for setting a switching frequency of the two switching circuit, and the first input / output port or the second input A current detection unit that detects a current input to and output from the power port, wherein the switching frequency setting unit sweeps a switching frequency, and the high side switch element of the first switching circuit or the second switching circuit The switching frequency is set based on a timing of starting a dead time of switching with the low-side switch element, a detection result of the current detection unit, and a threshold current value.

この構成では、負荷電流に応じてスイッチング周波数を修正することで、スイッチング損失を低減できる。また、スイッチング電源装置の製造後であっても、最適なスイッチング周波数を探索できるため、量産時の検査工程が減らせる。さらに、経年劣化により共振回路の共振周波数が変動しても、最適なスイッチング周波数を探索できる。   In this configuration, the switching loss can be reduced by correcting the switching frequency according to the load current. Further, since the optimum switching frequency can be searched even after the manufacturing of the switching power supply device, the inspection process at the time of mass production can be reduced. Furthermore, even if the resonance frequency of the resonance circuit varies due to aging, the optimum switching frequency can be searched.

前記スイッチング周波数設定部は、前記第１スイッチング回路及び前記第２スイッチング回路それぞれの前記ハイサイドスイッチ素子及び前記ローサイドスイッチ素子のターンオフのタイミングと、前記電流検出部が検出する電流値が前記閾値電流値を下回るタイミングとが一致する場合にスイッチング周波数を下げ、不一致の場合にスイッチング周波数を上げる構成でもよい。   The switching frequency setting unit includes a turn-off timing of the high-side switch element and the low-side switch element of each of the first switching circuit and the second switching circuit, and a current value detected by the current detection unit as the threshold current value. Alternatively, the switching frequency may be lowered when the timing falls below the timing, and the switching frequency may be raised when the timing does not match.

この構成では、スイッチ素子のデッドタイミングと、電流検出結果を取得できれば、スイッチング周波数を適切に掃引できるため、高速な処理を必要としない。   In this configuration, if the dead timing of the switch element and the current detection result can be acquired, the switching frequency can be swept appropriately, so that high-speed processing is not required.

前記スイッチング周波数設定部は、定期的にスイッチング周波数を設定する構成でもよい。   The switching frequency setting unit may be configured to periodically set the switching frequency.

この構成では、高い電力変換効率を維持できる。   With this configuration, high power conversion efficiency can be maintained.

前記第１スイッチング回路、又は前記第２スイッチング回路は、ハーフブリッジ回路又はフルブリッジ回路であってもよい。   The first switching circuit or the second switching circuit may be a half bridge circuit or a full bridge circuit.

本発明によれば、負荷電流に応じてスイッチング周波数を修正することで、スイッチング損失を低減できる。また、スイッチング電源装置の製造後であっても、最適なスイッチング周波数を設定できるため、量産時の検査工程が減らせる。さらに、経年劣化により共振回路の共振周波数が変動しても、最適なスイッチング周波数を設定できる。   According to the present invention, the switching loss can be reduced by correcting the switching frequency according to the load current. Further, since the optimum switching frequency can be set even after the switching power supply device is manufactured, the inspection process at the time of mass production can be reduced. Furthermore, even if the resonance frequency of the resonance circuit varies due to aging, an optimum switching frequency can be set.

図１は、実施形態１に係るスイッチング電源装置の回路図である。FIG. 1 is a circuit diagram of a switching power supply device according to the first embodiment. 図２は、スイッチング周波数が共振周波数より高い場合の、周波数調整部の各素子の動作波形を示す図である。FIG. 2 is a diagram illustrating an operation waveform of each element of the frequency adjustment unit when the switching frequency is higher than the resonance frequency. 図３は、スイッチング周波数が共振周波数より低い場合の、周波数調整部の各素子の動作波形を示す図である。FIG. 3 is a diagram illustrating an operation waveform of each element of the frequency adjustment unit when the switching frequency is lower than the resonance frequency. 図４は、最適なスイッチング周波数の場合の、周波数調整部の各素子の動作波形を示す図である。FIG. 4 is a diagram illustrating operation waveforms of the respective elements of the frequency adjustment unit in the case of the optimum switching frequency. 図５は、別の例のスイッチング電源装置の回路図である。FIG. 5 is a circuit diagram of another example of the switching power supply device. 図６は、別の例のスイッチング電源装置の回路図である。FIG. 6 is a circuit diagram of another example switching power supply device. 図７は、実施形態２に係るスイッチング電源装置の回路図である。FIG. 7 is a circuit diagram of the switching power supply device according to the second embodiment. 図８は、別の例のスイッチング電源装置の回路図である。FIG. 8 is a circuit diagram of another example switching power supply device.

（実施形態１）
図１は、実施形態１に係るスイッチング電源装置１の回路図である。(Embodiment 1)
FIG. 1 is a circuit diagram of a switching power supply device 1 according to the first embodiment.

スイッチング電源装置１は電流共振型ＤＣ−ＤＣコンバータであり、例えば太陽光発電システムに用いられる。以下では、電流共振型ＤＣ−ＤＣコンバータは、絶縁型であって、１次側及び２次側それぞれにフルブリッジ回路を有するものとして説明する。   The switching power supply device 1 is a current resonance type DC-DC converter, and is used, for example, in a photovoltaic power generation system. In the following description, it is assumed that the current resonance type DC-DC converter is an insulation type and has a full bridge circuit on each of the primary side and the secondary side.

スイッチング電源装置１は、一対の入出力端子ＩＯ１及び入出力端子ＩＯ２と、一対の入出力端子ＩＯ３及び入出力端子ＩＯ４とを備えている。入出力端子ＩＯ１及び入出力端子ＩＯ２は、ソーラパネルで発電された電力を蓄電する蓄電池に接続される。入出力端子ＩＯ３及び入出力端子ＩＯ４は、ソーラパネル及び電力系統に接続される。   The switching power supply device 1 includes a pair of input / output terminals IO1 and IO2, and a pair of input / output terminals IO3 and IO4. The input / output terminal IO1 and the input / output terminal IO2 are connected to a storage battery that stores electric power generated by the solar panel. The input / output terminal IO3 and the input / output terminal IO4 are connected to the solar panel and the power system.

一対の入出力端子ＩＯ１及び入出力端子ＩＯ２は、本発明に係る「第１入出力ポート」の一例である。一対の入出力端子ＩＯ３及び入出力端子ＩＯ４は、本発明に係る「第２入出力ポート」の一例である。   The pair of input / output terminals IO1 and IO2 is an example of the “first input / output port” according to the present invention. The pair of input / output terminals IO3 and IO4 is an example of the “second input / output port” according to the present invention.

スイッチング電源装置１は双方向ＤＣ−ＤＣコンバータであり、入出力端子ＩＯ３，ＩＯ４から入力された直流電圧を所定値に変圧し、入出力端子ＩＯ１，ＩＯ２に接続される蓄電池へ出力し、蓄電池を充電する。また、スイッチング電源装置１は、蓄電池の充電電圧が入出力端子ＩＯ１，ＩＯ２から入力されると、所定値に変圧し、入出力端子ＩＯ３，ＩＯ４に接続される電力系統へ供給する。   The switching power supply device 1 is a bidirectional DC-DC converter, transforms a DC voltage input from the input / output terminals IO3 and IO4 to a predetermined value, outputs it to a storage battery connected to the input / output terminals IO1 and IO2, and stores the storage battery. Charge. Further, when the charging voltage of the storage battery is input from the input / output terminals IO1 and IO2, the switching power supply device 1 transforms the storage battery 1 to a predetermined value and supplies it to the power system connected to the input / output terminals IO3 and IO4.

入出力端子ＩＯ１，ＩＯ２には、キャパシタＣ１及びスイッチング回路１１が接続されている。スイッチング回路１１は、スイッチング素子Ｑ１１と、スイッチング素子Ｑ１２の直列回路と、スイッチング素子Ｑ１３とスイッチング素子Ｑ１４の直列回路とが並列接続されたフルブリッジ回路である。スイッチング素子Ｑ１１〜Ｑ１４は、例えばＭＯＳ−ＦＥＴであり、そのゲートはドライバ１３に接続されている。   A capacitor C1 and a switching circuit 11 are connected to the input / output terminals IO1 and IO2. The switching circuit 11 is a full bridge circuit in which a switching element Q11, a series circuit of the switching element Q12, and a series circuit of the switching element Q13 and the switching element Q14 are connected in parallel. The switching elements Q11 to Q14 are, for example, MOS-FETs, and their gates are connected to the driver 13.

スイッチング回路１１は、本発明に係る「第１スイッチング回路」の一例である。スイッチング素子Ｑ１１及びスイッチング素子Ｑ１３は、本発明に係る「ハイサイドスイッチ素子」の一例である。スイッチング素子Ｑ１２及びスイッチング素子Ｑ１４は、本発明に係る「ローサイドスイッチ素子」の一例である。   The switching circuit 11 is an example of the “first switching circuit” according to the present invention. The switching element Q11 and the switching element Q13 are examples of the “high side switch element” according to the present invention. The switching element Q12 and the switching element Q14 are examples of the “low-side switch element” according to the present invention.

スイッチング素子Ｑ１１とスイッチング素子Ｑ１２の接続点は、インダクタＬ１を介してトランスＴの１次巻線Ｎ１に接続されている。１次巻線Ｎ１は、本発明に係る「第１コイル」の一例である。また、スイッチング素子Ｑ１３とスイッチング素子Ｑ１４の接続点は、キャパシタＣ３を介してトランスＴの１次巻線Ｎ１に接続されている。図１に示すインダクタＬｍはトランスＴの励磁インダクタンスである。なお、インダクタＬｍは、外付けの実部品であってもよい。インダクタＬ１、キャパシタＣ３及びインダクタＬｍは、ＬＬＣ共振回路１０を構成している。   A connection point between the switching element Q11 and the switching element Q12 is connected to the primary winding N1 of the transformer T via the inductor L1. The primary winding N1 is an example of the “first coil” according to the present invention. The connection point between the switching element Q13 and the switching element Q14 is connected to the primary winding N1 of the transformer T via the capacitor C3. An inductor Lm shown in FIG. 1 is an exciting inductance of the transformer T. The inductor Lm may be an external actual part. The inductor L1, the capacitor C3, and the inductor Lm constitute the LLC resonant circuit 10.

なお、インダクタＬ１は外付けの実部品でなく、トランスＴの漏れインダクタンスであってもよい。この場合、部品点数を削減できるため、コストダウン、小型化が可能である。   The inductor L1 may be a leakage inductance of the transformer T instead of an actual external component. In this case, since the number of parts can be reduced, cost reduction and size reduction are possible.

入出力端子ＩＯ３，ＩＯ４には、キャパシタＣ２及びスイッチング回路１２が接続されている。スイッチング回路１２は、スイッチング素子Ｑ２１と、スイッチング素子Ｑ２２の直列回路と、スイッチング素子Ｑ２３とスイッチング素子Ｑ２４の直列回路とが並列接続されたフルブリッジ回路である。スイッチング素子Ｑ２１〜Ｑ２４は、例えばＭＯＳ−ＦＥＴであり、そのゲートはドライバ１４に接続されている。   The capacitor C2 and the switching circuit 12 are connected to the input / output terminals IO3 and IO4. The switching circuit 12 is a full bridge circuit in which a switching element Q21, a series circuit of the switching element Q22, and a series circuit of the switching element Q23 and the switching element Q24 are connected in parallel. The switching elements Q21 to Q24 are, for example, MOS-FETs, and their gates are connected to the driver 14.

スイッチング回路１２は、本発明に係る「第２スイッチング回路」の一例である。スイッチング素子Ｑ２１及びスイッチング素子Ｑ２３は、本発明に係る「ハイサイドスイッチ素子」の一例である。スイッチング素子Ｑ２２及びスイッチング素子Ｑ２４は、本発明に係る「ローサイドスイッチ素子」の一例である。   The switching circuit 12 is an example of the “second switching circuit” according to the present invention. The switching element Q21 and the switching element Q23 are examples of the “high side switch element” according to the present invention. The switching element Q22 and the switching element Q24 are examples of the “low-side switch element” according to the present invention.

スイッチング素子Ｑ２１とスイッチング素子Ｑ２２の接続点は、トランスＴの２次巻線Ｎ２に接続されている。また、スイッチング素子Ｑ２３とスイッチング素子Ｑ２４の接続点はトランスＴの２次巻線Ｎ２に接続されている。２次巻線Ｎ２は、本発明に係る「第２コイル」の一例である。   A connection point between the switching element Q21 and the switching element Q22 is connected to the secondary winding N2 of the transformer T. The connection point between the switching element Q23 and the switching element Q24 is connected to the secondary winding N2 of the transformer T. The secondary winding N2 is an example of the “second coil” according to the present invention.

ドライバ１３は、スイッチング素子Ｑ１１〜Ｑ１４のゲートに制御信号を出力し、マイコン１５により設定されるスイッチング周波数で、各スイッチング素子Ｑ１１〜Ｑ１４をスイッチング制御する。具体的には、ドライバ１３は、スイッチング素子Ｑ１１及びスイッチング素子Ｑ１４と、スイッチング素子Ｑ１２及びスイッチング素子Ｑ１３とを、デッドタイムを設けて交互にオンオフする。   The driver 13 outputs a control signal to the gates of the switching elements Q11 to Q14, and controls the switching elements Q11 to Q14 at the switching frequency set by the microcomputer 15. Specifically, the driver 13 turns on and off the switching elements Q11 and Q14 and the switching elements Q12 and Q13 alternately with a dead time.

ドライバ１４は、スイッチング素子Ｑ２１〜Ｑ２４のゲートに制御信号を出力し、マイコン１５により設定されるスイッチング周波数で、各スイッチング素子Ｑ２１〜Ｑ２４をスイッチング制御する。具体的には、ドライバ１４は、スイッチング素子Ｑ２１及びスイッチング素子Ｑ２４と、スイッチング素子Ｑ２２及びスイッチング素子Ｑ２３とを、デッドタイムを設けて交互にオンオフする。   The driver 14 outputs a control signal to the gates of the switching elements Q21 to Q24, and performs switching control of the switching elements Q21 to Q24 at a switching frequency set by the microcomputer 15. Specifically, the driver 14 turns on and off the switching elements Q21 and Q24 and the switching elements Q22 and Q23 alternately with a dead time.

マイコン１５は、スイッチング回路１１及びスイッチング回路１２を所定のスイッチング周波数でスイッチングするように制御信号を出力する。ドライバ１３とドライバ１４は、その制御信号に基づいて、各スイッチング素子を駆動する。また、マイコン１５は、スイッチング周波数を掃引して、ＬＬＣ共振回路１０の共振周波数に一致するスイッチング周波数を探索する。ＬＬＣ共振回路１０の共振周波数に一致するスイッチング周波数でスイッチング回路１１，１２をスイッチング制御することで、スイッチング電源装置１の電力変換効率は高くなる。マイコン１５は、本発明に係る「スイッチング周波数設定部」の一例である。   The microcomputer 15 outputs a control signal so as to switch the switching circuit 11 and the switching circuit 12 at a predetermined switching frequency. The driver 13 and the driver 14 drive each switching element based on the control signal. Further, the microcomputer 15 sweeps the switching frequency to search for a switching frequency that matches the resonance frequency of the LLC resonance circuit 10. By performing switching control of the switching circuits 11 and 12 at a switching frequency that matches the resonance frequency of the LLC resonance circuit 10, the power conversion efficiency of the switching power supply device 1 is increased. The microcomputer 15 is an example of the “switching frequency setting unit” according to the present invention.

マイコン１５は、スイッチング周波数を掃引する際、周波数調整部１６からＨレベルの信号を受信すると、スイッチング周波数を下げ、Ｌレベルの信号を受信すると、スイッチング周波数を上げて、最適なスイッチング周波数を探索する。周波数調整部１６は、本発明に係る「スイッチング周波数設定部」の一例である。   When sweeping the switching frequency, the microcomputer 15 decreases the switching frequency when receiving an H level signal from the frequency adjusting unit 16 and increases the switching frequency when receiving an L level signal to search for an optimum switching frequency. . The frequency adjusting unit 16 is an example of the “switching frequency setting unit” according to the present invention.

周波数調整部１６は、ワンショットマルチバイブレータ１６Ａと、比較器１６Ｂと、ＡＮＤゲート１６Ｃと、ＡＮＤゲート１６Ｄと、ＮＡＮＤゲート１６Ｅと、ＯＲゲート１６Ｆとを有する。   The frequency adjustment unit 16 includes a one-shot multivibrator 16A, a comparator 16B, an AND gate 16C, an AND gate 16D, a NAND gate 16E, and an OR gate 16F.

ワンショットマルチバイブレータ１６Ａは、電流Ｉrの立ち下がりをトリガーとして、一定時間Ｈレベルを出力する。電流Ｉrは、入出力端子ＩＯ１に対して入出力される共振電流である。電流Ｉrが立ち下がるとき、ワンショットマルチバイブレータ１６Ａの出力信号（ａ）はＨレベルである。電流Ｉrは、入出力端子ＩＯ１に接続される電流検出回路１７により検出される。電流検出回路１７は、例えば、カレントトランス又は抵抗等で構成される。電流検出回路１７は、本発明に係る「電流検出部」の一例である。   The one-shot multivibrator 16A outputs an H level for a certain period of time triggered by the falling of the current Ir. The current Ir is a resonance current that is input to and output from the input / output terminal IO1. When the current Ir falls, the output signal (a) of the one-shot multivibrator 16A is at the H level. The current Ir is detected by a current detection circuit 17 connected to the input / output terminal IO1. The current detection circuit 17 is configured by, for example, a current transformer or a resistor. The current detection circuit 17 is an example embodiment that corresponds to the “current detection unit” according to the present invention.

なお、ワンショットマルチバイブレータ１６Ａは、微分回路等、電流の立下りを検出できるものであれば、適宜変更可能である。   Note that the one-shot multivibrator 16A can be appropriately changed as long as it can detect the falling of the current, such as a differentiating circuit.

比較器１６Ｂは、電流検出回路１７により検出される電流Ｉrと、閾値電流Ｉminとを比較する。電流Ｉrが閾値電流Ｉminを下回るとき、比較器１６Ｂの出力信号（ｂ）はＨレベルである。電流Ｉrが閾値電流Ｉminを上回るとき、比較器１６Ｂの出力信号（ｂ）はＬレベルである。この閾値電流Ｉminは、例えば、トランスＴの励磁電流の最大値であって、トランスの設計によって適宜設定される。 The comparator 16B compares the current Ir detected by the current detection circuit 17 with the threshold current Imin. When the current Ir falls below the threshold current Imin, the output signal (b) of the comparator 16B is at the H level. When the current Ir exceeds the threshold current Imin, the output signal (b) of the comparator 16B is at the L level. This threshold current Imin is, for example, the maximum value of the exciting current of the transformer T, and is appropriately set depending on the design of the transformer.

ＯＲゲート１６Ｆは、スイッチング素子Ｑ１１へのゲート信号と、スイッチング素子Ｑ１２へのゲート信号の論理和を出力する。前記のように、スイッチング素子Ｑ１１及びスイッチング素子Ｑ１４と、スイッチング素子Ｑ１２及びスイッチング素子Ｑ１３とは、デッドタイムを挟んで交互にオンオフされる。つまり、ＯＲゲート１６Ｆの出力信号（ｆ）は、デッドタイムでＬレベル、それ以外はＨレベルとなる。   The OR gate 16F outputs a logical sum of the gate signal to the switching element Q11 and the gate signal to the switching element Q12. As described above, the switching element Q11 and the switching element Q14, and the switching element Q12 and the switching element Q13 are alternately turned on and off with a dead time interposed therebetween. That is, the output signal (f) of the OR gate 16F is L level during the dead time, and is H level otherwise.

なお、ＯＲゲート１６Ｆは、スイッチング素子Ｑ１３へのゲート信号と、スイッチング素子Ｑ１４へのゲート信号の論理和を出力する構成であってもよい。   The OR gate 16F may be configured to output a logical sum of the gate signal to the switching element Q13 and the gate signal to the switching element Q14.

ＡＮＤゲート１６Ｃは、ワンショットマルチバイブレータ１６Ａの出力と、ＯＲゲート１６Ｆの出力との論理積を出力する。電流Ｉrが立ち下がり、かつ、スイッチング素子Ｑ１１又はスイッチング素子Ｑ１２の一方がオンである場合、ＡＮＤゲート１６Ｃの出力信号（ｃ）はＨレベルである。   The AND gate 16C outputs a logical product of the output of the one-shot multivibrator 16A and the output of the OR gate 16F. When the current Ir falls and one of the switching element Q11 or the switching element Q12 is on, the output signal (c) of the AND gate 16C is at the H level.

ＡＮＤゲート１６Ｄは、比較器１６Ｂの出力信号（ｂ）と、ＡＮＤゲート１６Ｃの出力信号（ｃ）との論理積を出力する。スイッチング素子Ｑ１１又はスイッチング素子Ｑ１２の一方がオンのときに電流Ｉrが立ち下がり、かつ、電流Ｉrが閾値電流Ｉminを下回る場合、ＡＮＤゲート１６Ｄの出力信号（ｄ）はＨレベルである。   The AND gate 16D outputs a logical product of the output signal (b) of the comparator 16B and the output signal (c) of the AND gate 16C. When the current Ir falls when one of the switching element Q11 or the switching element Q12 is on and the current Ir falls below the threshold current Imin, the output signal (d) of the AND gate 16D is at the H level.

ＮＡＮＤゲート１６Ｅは、ＡＮＤゲート１６Ｄの出力信号（ｄ）と、ＯＲゲート１６Ｆの出力信号（ｆ）との否定論理積を出力する。ＮＡＮＤゲート１６Ｅは、スイッチング素子Ｑ１１又はスイッチング素子Ｑ１２がオン、電流Ｉrが立ち下がり、かつ、電流Ｉrが閾値電流Ｉminを下回る場合、ＮＡＮＤゲート１６Ｅの出力信号（ｅ）はＬレベルである。   The NAND gate 16E outputs a negative logical product of the output signal (d) of the AND gate 16D and the output signal (f) of the OR gate 16F. In the NAND gate 16E, when the switching element Q11 or the switching element Q12 is turned on, the current Ir falls, and the current Ir falls below the threshold current Imin, the output signal (e) of the NAND gate 16E is L level.

以下に、ＬＬＣ共振回路１０の共振周波数と一致する最適なスイッチング周波数で、スイッチング回路１１及びスイッチング回路１２をスイッチング制御する場合について説明する。スイッチング回路１１及びスイッチング回路１２を、スイッチング損失が少ないＺＶＳ方式で制御を行うことが好ましい。   Hereinafter, a case where the switching control of the switching circuit 11 and the switching circuit 12 is performed with the optimum switching frequency that matches the resonance frequency of the LLC resonance circuit 10 will be described. It is preferable to control the switching circuit 11 and the switching circuit 12 by the ZVS method with little switching loss.

例えば、スイッチング素子Ｑ１１，Ｑ１４がオンのとき、入出力端子ＩＯ１からスイッチング回路１１側に向かって共振電流が流れる。このときの電流方向を正方向とする。この状態で、共振電流が閾値電流Ｉminを下回ってから、スイッチング素子Ｑ１１，Ｑ１４をターンオフする。その直後のデッドタイムでは、スイッチング素子Ｑ１２、Ｑ１３のボディダイオードを通して電流が還流する。還流期間に、スイッチング素子Ｑ１２，Ｑ１３にターンオンすると、ＺＶＳターンオンが行われ、スイッチング素子Ｑ１２，Ｑ１３に共振電流が流れ始める。   For example, when the switching elements Q11 and Q14 are on, a resonance current flows from the input / output terminal IO1 toward the switching circuit 11 side. The current direction at this time is defined as a positive direction. In this state, after the resonance current falls below the threshold current Imin, the switching elements Q11 and Q14 are turned off. In the dead time immediately after that, current flows back through the body diodes of the switching elements Q12 and Q13. When the switching elements Q12 and Q13 are turned on during the reflux period, ZVS turn-on is performed, and resonance current starts to flow through the switching elements Q12 and Q13.

このように、最適なスイッチング周波数であり、スイッチング損失を抑えてスイッチング回路１１及びスイッチング回路１２をスイッチング制御する場合、共振の途中でスイッチング素子をターンオフさせないことが好ましい。   As described above, when the switching circuit 11 and the switching circuit 12 are subjected to switching control while suppressing the switching loss with the optimum switching frequency, it is preferable not to turn off the switching element in the middle of the resonance.

図２は、スイッチング周波数が共振周波数より高い場合の、周波数調整部１６の各素子の動作波形を示す図である。   FIG. 2 is a diagram illustrating an operation waveform of each element of the frequency adjustment unit 16 when the switching frequency is higher than the resonance frequency.

この例では、電流Ｉｒが閾値電流Ｉminを下回る期間に、スイッチング素子Ｑ１１，Ｑ１２がターンオフされていない。すなわち、共振の途中でスイッチング素子Ｑ１１，Ｑ１２がターンオフされている。したがって、スイッチング素子Ｑ１１，Ｑ１２のスイッチング周波数は、最適なスイッチング周波数よりも高い。   In this example, the switching elements Q11 and Q12 are not turned off during the period when the current Ir is lower than the threshold current Imin. That is, the switching elements Q11 and Q12 are turned off during the resonance. Therefore, the switching frequency of switching elements Q11 and Q12 is higher than the optimum switching frequency.

このとき、周波数調整部１６の出力信号（ＮＡＮＤゲート１６Ｅの出力信号（ｅ））は、常時Ｈレベルである。マイコン１５は、周波数調整部１６からの出力信号がＨレベルを受信する場合、掃引するスイッチング周波数を下げる。   At this time, the output signal of the frequency adjustment unit 16 (the output signal (e) of the NAND gate 16E) is always at the H level. When the output signal from the frequency adjustment unit 16 receives the H level, the microcomputer 15 reduces the switching frequency to be swept.

図３は、スイッチング周波数が共振周波数より低い場合の、周波数調整部１６の各素子の動作波形を示す図である。   FIG. 3 is a diagram illustrating operation waveforms of the respective elements of the frequency adjustment unit 16 when the switching frequency is lower than the resonance frequency.

この例では、電流Ｉｒが閾値電流Ｉminを下回る期間に、スイッチング素子Ｑ１１，Ｑ１２がターンオフされている。しかしながら、還流電流が流れる期間（電流Ｉｒの値がほぼフラットとなる期間）が長く、スイッチング素子Ｑ１１，Ｑ１２のスイッチング周波数は、最適なスイッチング周波数よりも低い。   In this example, the switching elements Q11 and Q12 are turned off during the period when the current Ir is lower than the threshold current Imin. However, the period during which the reflux current flows (period in which the value of the current Ir is substantially flat) is long, and the switching frequency of the switching elements Q11 and Q12 is lower than the optimum switching frequency.

この状態では、周波数調整部１６の出力信号（ｅ）がＬレベルとなる時間が長い。マイコン１５がそのＬレベルの信号を受信する期間が長い場合（又は、Ｌレベルになる毎に）、マイコン１５は、掃引するスイッチング周波数を上げる。   In this state, it takes a long time for the output signal (e) of the frequency adjusting unit 16 to become L level. When the period during which the microcomputer 15 receives the L level signal is long (or every time the microcomputer 15 becomes L level), the microcomputer 15 increases the switching frequency to be swept.

このように、マイコン１５は、ＯＲゲート１６Ｆの出力信号（ｆ）に応じて、スイッチング周波数を上下させて、掃引するスイッチング周波数を、最適なスイッチング周波数に近づける。   As described above, the microcomputer 15 raises and lowers the switching frequency in accordance with the output signal (f) of the OR gate 16F to bring the switching frequency to be swept closer to the optimum switching frequency.

図４は、最適なスイッチング周波数の場合の、周波数調整部１６の各素子の動作波形を示す図である。   FIG. 4 is a diagram illustrating operation waveforms of the respective elements of the frequency adjusting unit 16 in the case of the optimum switching frequency.

この例では、電流Ｉｒが閾値電流Ｉminを下回る期間に、スイッチング素子Ｑ１１，Ｑ１２がターンオフされている。そして、スイッチング素子Ｑ１１，Ｑ１２は、共振周期の途中でターンオフされていない。したがって、この場合、スイッチング素子Ｑ１１，Ｑ１２のスイッチング周波数は、最適なスイッチング周波数である。つまり、周波数調整部１６の出力信号（ｅ）がＬレベルとなる期間を最適化するように周波数を掃引することで、最適なスイッチング周波数を探索することができる。   In this example, the switching elements Q11 and Q12 are turned off during the period when the current Ir is lower than the threshold current Imin. Switching elements Q11 and Q12 are not turned off in the middle of the resonance period. Therefore, in this case, the switching frequency of the switching elements Q11 and Q12 is an optimum switching frequency. That is, the optimum switching frequency can be searched by sweeping the frequency so as to optimize the period during which the output signal (e) of the frequency adjusting unit 16 is at the L level.

以上のように、スイッチング電源装置１は、電流Ｉｒに応じてスイッチング周波数を修正することで、スイッチング損失を低減できる。この探索は、論理回路を用いて行えるため、高速な処理を行うマイコン等を必要としない。これにより、コストダウンが図れる。また、スイッチング電源装置１の製造後であっても、最適なスイッチング周波数を探索できるため、量産時の検査工程が減らせる。さらに、経年劣化してＬＬＣ共振回路１０の共振周波数が変動しても、最適なスイッチング周波数を探索できる。   As described above, the switching power supply device 1 can reduce the switching loss by correcting the switching frequency according to the current Ir. Since this search can be performed using a logic circuit, a microcomputer or the like that performs high-speed processing is not required. Thereby, cost reduction can be achieved. In addition, since the optimum switching frequency can be searched even after the switching power supply device 1 is manufactured, the inspection process at the time of mass production can be reduced. Furthermore, even when the resonant frequency of the LLC resonant circuit 10 fluctuates due to aging, the optimum switching frequency can be searched.

この最適なスイッチング周波数の探索は、定期的に行うことが好ましい。そうすることで、スイッチング電源装置１は、高い電力変換効率を維持できる。   The search for the optimum switching frequency is preferably performed periodically. By doing so, the switching power supply device 1 can maintain high power conversion efficiency.

なお、本実施形態では、トランスＴの１次側にＬＬＣ共振回路１０を設けた例を示しているが、２次側にＬＬＣ共振回路１０を設けてもよい。この場合であっても、各スイッチング素子のスイッチング制御は同じである。   In the present embodiment, an example in which the LLC resonance circuit 10 is provided on the primary side of the transformer T is shown, but the LLC resonance circuit 10 may be provided on the secondary side. Even in this case, the switching control of each switching element is the same.

本実施形態では、スイッチング回路１１及びスイッチング回路１２はフルブリッジ回路として説明したが、これに限定されない。   In the present embodiment, the switching circuit 11 and the switching circuit 12 are described as full bridge circuits, but the present invention is not limited to this.

図５は、別の例のスイッチング電源装置１Ａの回路図である。この例では、入出力端子ＩＯ１，ＩＯ２に接続されるスイッチング回路１１Ａと、入出力端子ＩＯ３，ＩＯ４に接続されるスイッチング回路１２Ａは、それぞれハーフブリッジ回路である。   FIG. 5 is a circuit diagram of another example of the switching power supply apparatus 1A. In this example, the switching circuit 11A connected to the input / output terminals IO1, IO2 and the switching circuit 12A connected to the input / output terminals IO3, IO4 are half-bridge circuits.

スイッチング回路１１Ａは、スイッチング素子Ｑ１１と、スイッチング素子Ｑ１２の直列回路と、キャパシタＣ４１とキャパシタＣ４２の直列回路とが並列接続されたハーフブリッジ回路である。   The switching circuit 11A is a half bridge circuit in which a switching element Q11, a series circuit of the switching element Q12, and a series circuit of a capacitor C41 and a capacitor C42 are connected in parallel.

スイッチング回路１２Ａは、スイッチング素子Ｑ２３と、スイッチング素子Ｑ２４の直列回路と、キャパシタＣ５１とキャパシタＣ５２の直列回路とが並列接続されたハーフブリッジ回路である。   The switching circuit 12A is a half bridge circuit in which a switching element Q23, a series circuit of the switching element Q24, and a series circuit of a capacitor C51 and a capacitor C52 are connected in parallel.

図６は、別の例のスイッチング電源装置１Ｂの回路図である。この例では、入出力端子ＩＯ１，ＩＯ２には、ハーフブリッジ回路であるスイッチング回路１１Ａが接続され、入出力端子ＩＯ３，ＩＯ４には、フルブリッジ回路であるスイッチング回路１２が接続される。   FIG. 6 is a circuit diagram of another example of the switching power supply apparatus 1B. In this example, a switching circuit 11A that is a half-bridge circuit is connected to the input / output terminals IO1 and IO2, and a switching circuit 12 that is a full-bridge circuit is connected to the input / output terminals IO3 and IO4.

スイッチング電源装置１Ａ，１Ｂの回路構成であっても、最適なスイッチング周波数を探索することができる。   Even with the circuit configuration of the switching power supply devices 1A and 1B, the optimum switching frequency can be searched.

なお、電流検出回路１７は、入出力端子ＩＯ３側に設けられてもよい。この場合、周波数調整部１６のＯＲゲート１６Ｆは、スイッチング素子Ｑ２１（又はスイッチング素子Ｑ２３）へのゲート信号と、スイッチング素子Ｑ２２（又はスイッチング素子Ｑ２４）へのゲート信号の論理和を出力するように構成される。さらに、電流検出回路１７は、入出力端子ＩＯ２，ＩＯ４側に設けられてもよい。   Note that the current detection circuit 17 may be provided on the input / output terminal IO3 side. In this case, the OR gate 16F of the frequency adjustment unit 16 is configured to output a logical sum of the gate signal to the switching element Q21 (or switching element Q23) and the gate signal to the switching element Q22 (or switching element Q24). Is done. Furthermore, the current detection circuit 17 may be provided on the input / output terminals IO2 and IO4 side.

（実施形態２）
実施形態１に係るスイッチング電源装置は、双方向の電流共振型ＤＣ−ＤＣコンバータであるのに対し、実施形態２に係るスイッチング電源装置は、単方向の電流共振型ＤＣ−ＤＣコンバータである点で、実施形態１と相違する。以下、実施形態１との相違点についてのみ説明する。(Embodiment 2)
The switching power supply according to the first embodiment is a bidirectional current resonance type DC-DC converter, whereas the switching power supply according to the second embodiment is a unidirectional current resonance type DC-DC converter. This is different from the first embodiment. Only differences from the first embodiment will be described below.

図７は、実施形態２に係るスイッチング電源装置２の回路図である。   FIG. 7 is a circuit diagram of the switching power supply device 2 according to the second embodiment.

スイッチング電源装置２は、１次巻線Ｎ１と２次巻線Ｎ３を含むトランスＴ１を有する。１次巻線Ｎ１は、スイッチング回路１１に接続される。２次巻線Ｎ３の第１端はダイオードＤ１を介して入出力端子ＩＯ３に接続される。また、２次巻線Ｎ３の第２端はダイオードＤ２を介して入出力端子ＩＯ３に接続される。２次巻線Ｎ３は中間タップを有し、その中間タップは入出力端子ＩＯ４に接続される。   The switching power supply device 2 has a transformer T1 including a primary winding N1 and a secondary winding N3. The primary winding N1 is connected to the switching circuit 11. The first end of the secondary winding N3 is connected to the input / output terminal IO3 via the diode D1. The second end of the secondary winding N3 is connected to the input / output terminal IO3 via the diode D2. Secondary winding N3 has an intermediate tap, which is connected to input / output terminal IO4.

スイッチング電源装置２が備える周波数調整部１６の構成及び動作は、実施形態１と同じである。   The configuration and operation of the frequency adjustment unit 16 included in the switching power supply device 2 are the same as those in the first embodiment.

図８は、別の例のスイッチング電源装置２Ａの回路図である。この例では、入出力端子ＩＯ１，ＩＯ２に接続されるスイッチング回路１１Ｂは、ハーフブリッジ回路である。   FIG. 8 is a circuit diagram of another example of the switching power supply apparatus 2A. In this example, the switching circuit 11B connected to the input / output terminals IO1 and IO2 is a half-bridge circuit.

スイッチング回路１１Ｂは、キャパシタＣ４３とキャパシタＣ４４の直列回路と、スイッチング素子Ｑ１３とスイッチング素子Ｑ１４の直列回路とが並列接続されたハーフブリッジ回路である。   Switching circuit 11B is a half-bridge circuit in which a series circuit of capacitors C43 and C44 and a series circuit of switching elements Q13 and Q14 are connected in parallel.

このスイッチング電源装置２，２Ａの構成であっても、電流Ｉｒに応じてスイッチング周波数を修正することで、スイッチング損失を低減できる。この探索は、論理回路を用いて行えるため、高速な処理を行うマイコン等を必要としない。これにより、コストダウンが図れる。また、スイッチング電源装置２，２Ａの製造後であっても、最適なスイッチング周波数を探索できるため、量産時の検査工程が減らせる。さらに、経年劣化してＬＬＣ共振回路１０の共振周波数が変動しても、最適なスイッチング周波数を探索できる。   Even in the configuration of the switching power supply devices 2 and 2A, the switching loss can be reduced by correcting the switching frequency according to the current Ir. Since this search can be performed using a logic circuit, a microcomputer or the like that performs high-speed processing is not required. Thereby, cost reduction can be achieved. Further, since the optimum switching frequency can be searched even after the switching power supply devices 2 and 2A are manufactured, the inspection process at the time of mass production can be reduced. Furthermore, even when the resonant frequency of the LLC resonant circuit 10 fluctuates due to aging, the optimum switching frequency can be searched.

Ｃ１，Ｃ２，Ｃ３…キャパシタ
Ｃ４１，Ｃ４２，Ｃ４３，Ｃ４４…キャパシタ
Ｃ５１，Ｃ５２…キャパシタ
Ｄ１，Ｄ２…ダイオード
ＩＯ１，ＩＯ２…入出力端子（第１入出力ポート）
ＩＯ３，ＩＯ４…入出力端子（第２入出力ポート）
Ｌ１，Ｌｍ…インダクタ
Ｎ１…１次巻線（第１コイル）
Ｎ２，Ｎ３…２次巻線（第２コイル）
Ｑ１１，Ｑ１４…スイッチング素子（ハイサイドスイッチ素子）
Ｑ１２，Ｑ１３…スイッチング素子（ローサイドスイッチ素子）
Ｑ２１，Ｑ２３…スイッチング素子（ハイサイドスイッチ素子）
Ｑ２２，Ｑ２４…スイッチング素子（ローサイドスイッチ素子）
Ｔ，Ｔ１…トランス
１，１Ａ，１Ｂ，２，２Ａ…スイッチング電源装置
１０…ＬＬＣ共振回路
１１，１１Ａ，１１Ｂ…スイッチング回路（第１スイッチング回路）
１２，１２Ａ…スイッチング回路（第２スイッチング回路）
１３，１４…ドライバ
１５…マイコン（スイッチング周波数設定部）
１６…周波数調整部（スイッチング周波数設定部）
１６Ａ…ワンショットマルチバイブレータ
１６Ｂ…比較器
１６Ｃ…ＡＮＤゲート
１６Ｄ…ＡＮＤゲート
１６Ｅ…ＮＡＮＤゲート
１６Ｆ…ＯＲゲート
１７…電流検出回路（電流検出部）C1, C2, C3 ... capacitors C41, C42, C43, C44 ... capacitors C51, C52 ... capacitors D1, D2 ... diodes IO1, IO2 ... input / output terminals (first input / output ports)
IO3, IO4 ... Input / output terminals (second input / output ports)
L1, Lm ... Inductor N1 ... Primary winding (first coil)
N2, N3 ... Secondary winding (second coil)
Q11, Q14 ... Switching elements (high-side switch elements)
Q12, Q13 ... Switching element (low-side switch element)
Q21, Q23 ... Switching elements (high-side switch elements)
Q22, Q24 ... Switching elements (low-side switch elements)
T, T1... Transformer 1, 1A, 1B, 2, 2A... Switching power supply device 10... LLC resonant circuit 11, 11A, 11B.
12, 12A ... switching circuit (second switching circuit)
13, 14 ... Driver 15 ... Microcomputer (switching frequency setting unit)
16 ... Frequency adjustment unit (switching frequency setting unit)
16A ... One-shot multivibrator 16B ... Comparator 16C ... AND gate 16D ... AND gate 16E ... NAND gate 16F ... OR gate 17 ... Current detection circuit (current detection unit)

Claims (4)

第１入出力ポート及び第２入出力ポートと、
ハイサイドスイッチ素子及びローサイドスイッチ素子を有し、前記第１入出力ポートに接続される第１スイッチング回路と、
ハイサイドスイッチ素子及びローサイドスイッチ素子を有し、前記第２入出力ポートに接続される第２スイッチング回路と、
磁気結合する第１コイル及び第２コイルを有し、前記第１コイルが前記第１スイッチング回路に接続され、前記第２コイルが前記第２スイッチング回路に接続されたトランスと、
前記第１コイル又は前記第２コイルを含んで構成される共振回路と、
前記第１スイッチング回路及び前記第２スイッチング回路のスイッチング周波数を設定するスイッチング周波数設定部と、
前記第１入出力ポート又は前記第２入出力ポートに入出力される電流を検出する電流検出部と、
を備え、
前記スイッチング周波数設定部は、
スイッチング周波数を掃引し、前記第１スイッチング回路又は前記第２スイッチング回路の前記ハイサイドスイッチ素子と前記ローサイドスイッチ素子とのスイッチングのデッドタイムを開始するタイミングと、前記電流検出部の検出結果と、閾値電流値とに基づいて、スイッチング周波数を設定する、
スイッチング電源装置。A first input / output port and a second input / output port;
A first switching circuit having a high-side switch element and a low-side switch element and connected to the first input / output port;
A second switching circuit having a high-side switch element and a low-side switch element and connected to the second input / output port;
A transformer having a first coil and a second coil that are magnetically coupled, wherein the first coil is connected to the first switching circuit, and the second coil is connected to the second switching circuit;
A resonance circuit including the first coil or the second coil;
A switching frequency setting unit for setting a switching frequency of the first switching circuit and the second switching circuit;
A current detection unit for detecting a current input to and output from the first input / output port or the second input / output port;
With
The switching frequency setting unit is
A timing for sweeping a switching frequency and starting a dead time of switching between the high-side switch element and the low-side switch element of the first switching circuit or the second switching circuit, a detection result of the current detection unit, and a threshold value Set the switching frequency based on the current value,
Switching power supply. 前記スイッチング周波数設定部は、
前記第１スイッチング回路及び前記第２スイッチング回路それぞれの前記ハイサイドスイッチ素子及び前記ローサイドスイッチ素子のターンオフのタイミングと、前記電流検出部が検出する電流値が前記閾値電流値を下回るタイミングとが一致する場合にスイッチング周波数を下げ、不一致の場合にスイッチング周波数を上げる、
請求項１に記載のスイッチング電源装置。The switching frequency setting unit is
The turn-off timing of the high-side switch element and the low-side switch element of each of the first switching circuit and the second switching circuit coincides with the timing when the current value detected by the current detection unit falls below the threshold current value. Lower the switching frequency in case, increase the switching frequency in case of mismatch,
The switching power supply device according to claim 1. 前記スイッチング周波数設定部は、定期的にスイッチング周波数を設定する、
請求項１又は２に記載のスイッチング電源装置。The switching frequency setting unit periodically sets the switching frequency;
The switching power supply device according to claim 1 or 2. 前記第１スイッチング回路、又は前記第２スイッチング回路は、
ハーフブリッジ回路又はフルブリッジ回路である、
請求項１から３のいずれかに記載のスイッチング電源装置。The first switching circuit or the second switching circuit is:
Half-bridge circuit or full-bridge circuit,
The switching power supply device according to claim 1.
JP2018522445A 2016-06-06 2017-06-02 Switching power supply Active JP6390823B2 (en)

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