JP6387294B2 - Adsorption device, vacuum processing device, vacuum processing method - Google Patents

Description

  The present invention relates to a technique for measuring a residual charge of a processing object and a technique for eliminating the residual charge of the processing object.

Reference numeral 111 in FIG. 7A is a conventional vacuum processing apparatus, and includes a vacuum chamber 120. An adsorption plate 121 is disposed inside the vacuum chamber 120, and a target 134 attached to the cathode electrode 133 is disposed above the adsorption plate 121.
A vacuum evacuation device 131 is provided in the vacuum chamber 120, and when the vacuum evacuation device 131 is operated, the inside of the vacuum chamber 120 is evacuated and a vacuum atmosphere is formed inside the vacuum chamber 120.

  The vacuum chamber 120 is provided with a carry-in port 174a and a carry-out port 174b. A substrate is carried into the vacuum chamber 120 from the carry-in port 174a, and the substrate carried into the vacuum vessel 120 is loaded. It can be carried out of the vacuum chamber 120 through the outlet 174b.

The suction plate 121 is provided with a plurality of through holes 136, and the pins 140 are inserted into the through holes 136, respectively.
Each pin 140 is connected to an elevating device 175 so that it can move up and down.
The substrate loaded on the hand of the substrate transport robot and carried in from the carry-in entrance 174a moves the pins 140 up to be transferred to the pins 140, and lowers the pins 140 to place the substrate on the suction plate 121.

Reference numeral 123 in FIG. 7B indicates a substrate placed on the suction plate 121.
When a sputtering gas is introduced into the vacuum chamber 120 from the gas introduction device 132 and a sputtering voltage is applied to the cathode electrode 133 by the sputtering power source 135, plasma is formed near the surface of the target 134, the target 134 is sputtered, and the substrate 123. A thin film grows on the surface.

  At this time, the substrate 123 is electrically connected to the vacuum chamber 120 at the ground potential by the plasma, and an adsorption voltage is applied to the electrode 102 disposed inside the adsorption plate 121 from the adsorption power source 124, thereby When the capacitor formed between the electrode 102 and the electrode 102 is charged, the substrate 123 is electrostatically adsorbed on the adsorption plate 121 by the electrostatic adsorption force, and the heat transfer coefficient between the substrate 123 and the adsorption plate 121 is improved.

The suction plate 121 is disposed on the temperature adjustment device 138, and the temperature control of the substrate 123 is facilitated by the temperature adjustment device 138.
When the thin film grows to a predetermined thickness, the vacuum processing by sputtering is completed, the substrate 123 is carried out of the vacuum chamber 120, another untreated substrate is carried into the vacuum chamber 120, and sputtering is started.

  In the vacuum processing method using the suction plate 121 as described above, it is applied to the electrode 102 when the substrate 123 is peeled from the suction plate 121 in order to carry out the substrate 123 after the vacuum processing to the outside of the vacuum chamber 120. Even when the attracting voltage is cut off, the capacitor formed by the electrode 102 and the substrate 123 has a residual charge, and the substrate 123 remains attracted to the attracting plate 121.

  FIG. 7C shows a state in which the pin 140 is raised and the upper end of the pin 140 is in contact with the back surface of the substrate 123. With the residual charge, the pin 140 in FIG. When the substrate 123 is lifted, the substrate 123 is broken due to the residual adsorption force, the position is shifted on the pins 140 when the substrate 123 is lifted, the substrate 123 is dropped from the pins 140, and the like. Problem occurs (FIG. 7D).

  Even if the residual charge is directly measured, the electric lines of force formed by the residual charge are formed in a very small space between the suction plate 121 and the substrate 123, so that it is difficult to directly measure the residual charge. A sensor is provided on the arm or the like of the substrate transfer robot, and when the substrate 123 lifted from the suction plate 121 is carried out of the vacuum chamber 120, the charge amount of the substrate 123 is measured, and the measurement result when the next substrate is lifted There is a technique for applying a reverse voltage having a magnitude obtained from the above.

  Further, when the substrate 123 after the vacuum processing is peeled off from the suction plate 121 and lifted, the current flowing through the electrode 102 is measured, the magnitude of the reverse voltage is obtained from the measurement result, and then the substrate subjected to the vacuum processing On the other hand, there is a technique in which a reverse voltage having a magnitude obtained from the measurement result of the substrate 123 that has been vacuum-treated immediately before is applied and then lifted.

  However, the residual charge has a different size for each substrate due to differences in process conditions, process changes, differences in substrate warpage, differences in substrate surface, and the like. Since the reverse voltage of the magnitude obtained in (1) is applied to the substrate to be lifted, the residual charge can be reduced but cannot be eliminated.

  When a sensor is provided on the arm, there are various types of vacuum processing that require the suction plate 121, such as PVD, CVD, etching, and the atmosphere in which the sensor is placed is different. Therefore, a general-purpose suction device is provided. Is difficult.

Japanese Patent No. 4226101

  The present invention was created to solve the above-described problems of the prior art, and provides a technique for obtaining a reverse voltage corresponding to a substrate to be peeled off and safely peeling the substrate. To do.

In order to solve the above problems, the present invention provides an insulating plate disposed inside a vacuum chamber and in contact with a processing target, and a first facing the processing target in a non-contact manner disposed on the insulating plate. The electrode, the first power supply wiring connected to the first electrode and having electrical conductivity, and the processing object on the insulating plate are electrically connected to a ground potential, and the suction power supply A suction voltage is applied to the first electrode via the first power supply wiring, the capacitance between the processing object and the first electrode is charged, and the processing object is simply absorbed onto the insulating plate. An electrode-type adsorption device, which is provided on the first power supply wiring and electrically connects the first electrode and the adsorption power source when in a closed state, and the first electrode and the adsorption power source when in an open state. A first switchgear for disconnecting the electrical connection between the A first measurement part that is electrically connected to the first electrode and disposed outside the vacuum chamber, a first potential measurement device that measures the potential of the first measurement part, and the processing object Is electrically connected to a grounding member connected to a ground potential, the first opening / closing device is opened, and the first electrode is floated on the first potential measuring device. It is an adsorption device having a control device for measuring the potential of the part to be measured.
The present invention includes an insulating plate disposed in a vacuum chamber and in contact with a processing object, and a first electrode and a second electrode that are disposed on the insulating plate and face each other without contacting the processing object. The first power supply wiring connected to the first electrode and having electrical conductivity, the second power supply wiring connected to the second electrode and having electrical conductivity, the first power supply wiring and the second power supply wiring And applying an adsorption voltage between the first electrode and the second electrode by an adsorption power source, between the processing object disposed on the insulating plate and the first electrode, and the processing object A bipolar adsorption device for charging a capacity between an object and the second electrode and adsorbing the object to be treated to the insulating plate, provided in the first power supply wiring, When the first electrode and the adsorption power source are electrically connected and opened, the first electrode A first opening / closing device that cuts off the electrical connection between the suction power source and the first power source, and a first measured part that is electrically connected to the first electrode by a first signal wiring and is arranged outside the vacuum chamber A first potential measuring device for measuring the potential of the first measured part; and electrically connecting the object to be processed to a grounding member connected to a ground potential; and opening the first opening / closing device. The adsorption device has a control device that causes the first potential measuring device to measure the potential of the first measured part in a state where the first electrode is electrically floating.
The present invention is the suction device in which the processing object is brought into contact with the grounding member by the control device when measuring the potential of the first measured part.
In the present invention, when measuring the potential of the first measured part, the control device contains a charged gas having conductivity in the vacuum atmosphere of the vacuum chamber, and the object to be processed is supplied by the charged gas. The suction device is electrically connected to the ground member.
The present invention includes a charged gas generation device that generates the charged gas, contacts the processing object, and electrically connects the processing object to the ground member, and the charged gas generation device includes the control The adsorption device generates the charged gas by controlling the device.
This invention is an adsorption | suction apparatus with which the processing apparatus which processes the said process target object in the said vacuum chamber is used for the said charged gas production | generation apparatus.
In the present invention, the control device calculates a reverse voltage based on a measurement result measured by the first potential measuring device, closes the first switching device, and supplies the first electrode from the adsorption power source to the first electrode. An adsorption device that outputs a reverse voltage to neutralize the first electrode.
According to the present invention, the control device generates plasma with electric power having a magnitude based on a measurement result measured by the first potential measuring device, contacts the processing object, and connects to the ground potential. An adsorbing device that closes the switchgear and discharges the first electrode by setting the first electrode to ground potential.
According to the present invention, the first potential measuring device detects a potential of the first measured part and generates a potential signal according to the magnitude of the detected potential, and the potential signal is input. A first measuring device main body for obtaining a potential value indicated by the potential signal, wherein the first potential detecting unit is in a non-contact state with the first measured unit. It is an adsorption device that detects a potential.
According to the present invention, the first potential measuring device detects a potential of the first measured part and generates a potential signal according to the magnitude of the detected potential, and the potential signal is input. A first measuring device body for obtaining a potential value indicated by the potential signal; and a current limiting device for restricting a current flow, wherein the first potential detecting unit includes the first measured device and the first measured device. It is an adsorption device that detects the potential of the first measured part in a state of contact through a current limiting device.
The present invention is the suction device in which at least a part of the first signal wiring is the first power supply wiring.
The present invention includes a vacuum chamber, an insulating plate disposed inside the vacuum chamber and in contact with a processing target, and a first electrode disposed on the insulating plate and facing the processing target in a non-contact manner. A first power supply wiring connected to the first electrode and having electrical conductivity, a suction power supply connected to the first electrode by the first power supply wiring, and a vacuum for making the inside of the vacuum chamber a vacuum atmosphere An exhaust device, a processing device for processing the object to be processed in the vacuum atmosphere, and a grounding member that is set to a ground potential, applying an adsorption voltage to the first electrode by the adsorption power source, A vacuum processing apparatus for adsorbing the processing object electrically connected to an electric potential and processing the processing object by the processing apparatus. The vacuum processing apparatus is provided in the first power supply wiring, and the first electrode and the adsorption power supply when in a closed state. Is electrically connected to the front A first opening / closing device for disconnecting an electrical connection between the first electrode and the adsorption power source; a first switch electrically connected to the first electrode by a first signal wiring and disposed outside the vacuum chamber; The device to be measured, a first potential measuring device for measuring the potential of the first device to be measured, and the object to be processed are electrically connected to the grounding member, and the first opening / closing device is opened. And a control device that causes the first potential measuring device to measure the potential of the first measured part in a state.
The present invention includes a vacuum chamber, an insulating plate disposed inside the vacuum chamber and in contact with a processing target, and a first electrode disposed on the insulating plate and facing the processing target in a non-contact manner. And a second electrode, a first power supply wiring connected to the first electrode and having electrical conductivity, a suction power supply connected to the first electrode by the first power supply wiring, and a vacuum inside the vacuum chamber A vacuum evacuation device for forming an atmosphere; and a processing device for processing the object to be processed in the vacuum atmosphere. An adsorption voltage is applied between the first electrode and the second electrode by the adsorption power source. And a vacuum processing apparatus for sucking the processing object arranged on the insulating plate and processing the processing object by the processing apparatus, provided in the first power supply wiring, and in the closed state, the first electrode and the suction When the power supply is electrically connected and opened, the first A first switchgear for disconnecting an electrical connection between an electrode and the suction power source; and a first device to be measured which is electrically connected to the first electrode by a first signal wiring and arranged outside the vacuum chamber And a first potential measuring device for measuring the potential of the first measured portion; and electrically connecting the object to be processed to a grounding member connected to a ground potential; And a control device that causes the first potential measuring device to measure the potential of the first measured part in a state of being configured.
The present invention is the vacuum processing apparatus in which the processing object is brought into contact with the grounding member by the control device when measuring the potential of the first measured part.
In the present invention, when measuring the potential of the first measured part, the control device contains a charged gas having conductivity in the vacuum atmosphere of the vacuum chamber, and the object to be processed is supplied by the charged gas. The vacuum processing apparatus is electrically connected to the ground member.
The present invention includes a charging gas generation device that generates the charged gas, contacts the processing object, and connects the processing object to the ground member. The charging gas generation device is controlled by the control device. Thus, the vacuum processing apparatus generates the charged gas.
The present invention is a vacuum processing apparatus in which the processing apparatus is used for the charged gas generation apparatus.
According to the present invention, the control device calculates a reverse voltage based on a measurement result measured by the first potential measurement device, closes the first switching device, and supplies the reverse voltage from the adsorption power source to the first voltage. It is a vacuum processing apparatus which outputs to one electrode and discharges the first electrode.
According to the present invention, the control device generates plasma with electric power having a magnitude based on a measurement result measured by the first potential measuring device, contacts the processing object, and connects to the ground potential. A vacuum processing device that closes the switchgear and discharges the first electrode by setting the first electrode to ground potential.
According to the present invention, the first potential measuring device detects a potential of the first measured part and generates a potential signal according to the magnitude of the detected potential, and the potential signal is input. A measuring device main body for obtaining a potential value indicated by the potential signal, wherein the first potential detecting unit is configured to determine the potential of the first measured unit in a non-contact state with the first measured unit. It is a vacuum processing apparatus to detect.
According to the present invention, the first potential measuring device detects a potential of the first measured part and generates a potential signal according to the magnitude of the detected potential, and the potential signal is input. A measuring device main body for obtaining a potential value indicated by the potential signal; and a current limiting device for limiting a current flow, wherein the first potential detecting unit includes the first measured unit and the current limiting unit. It is a vacuum processing apparatus which detects the electric potential of said 1st to-be-measured part in the state contacted through the apparatus.
The present invention is the vacuum processing apparatus in which at least a part of the first signal wiring is the first power supply wiring.
The present invention includes a vacuum atmosphere forming step for forming a vacuum atmosphere in a vacuum chamber, a disposing step for disposing a processing object on an insulating plate disposed in the vacuum chamber, and a processing object disposed on the insulating plate. A first electrode facing non-contact with the suction power source, applying a suction voltage from the suction power source to the first electrode, arranged on the insulating plate and electrically connected to a ground potential A vacuum processing step of processing the object to be processed while adsorbing the object to the insulating plate, wherein a conductive charged gas is contained in the vacuum atmosphere, and the object to be processed is included. Electrically connecting to a grounding member connected to a ground potential; electrically disconnecting the first electrode from the adsorption power source and electrically floating the first electrode; Connected to the first electrode, A measuring step of measuring the potential of the first part to be measured which is disposed outside the serial vacuum chamber, a vacuum processing method having.
The present invention includes a vacuum atmosphere forming step for forming a vacuum atmosphere in a vacuum chamber, a disposing step for disposing a processing object on an insulating plate disposed in the vacuum chamber, and a processing object disposed on the insulating plate. The first electrode and the second electrode facing each other in a non-contact manner are connected to an adsorption power source, and an adsorption voltage is applied between the first electrode and the second electrode from the adsorption power source, and is disposed on the insulating plate. A vacuum processing step of processing the processing object while adsorbing the processing object to the insulating plate, and including a charged gas having conductivity in the vacuum atmosphere, A grounding step of electrically connecting the object to be treated to a grounding member connected to a ground potential; and electrically disconnecting the first electrode from the adsorption power source and electrically connecting the first electrode to the first electrode by a first signal wiring. Connected to the outside of the vacuum chamber. A measuring step of measuring the potential of the first part to be measured which is a vacuum processing method having.
The present invention is the vacuum processing method in which the object to be processed is brought into contact with the ground member when measuring the potential of the first measured part.
According to the present invention, in the vacuum processing step, a charged processing gas having conductivity is contained in the vacuum atmosphere, the processing gas is brought into contact with the processing object and the ground member, and the processing target A vacuum processing method for electrically connecting an object to the ground member.
The present invention is a vacuum processing method using the charged processing gas as the charging gas.
The present invention calculates a reverse voltage based on the measurement result of the measurement step, electrically connects the first electrode to the adsorption power source, and outputs the reverse voltage from the adsorption power source to the first electrode. This is a vacuum processing method.
In the present invention, plasma is generated with electric power having a magnitude based on the measurement result of the potential of the first measured part, and the plasma is brought into contact with the object to be processed. It is the vacuum processing method which removes electricity.
The present invention provides a vacuum processing method for measuring the potential of the first measured part by a first potential measuring device in the measuring step, the vacuum processing method being connected to the first potential measuring device, In the vacuum processing method, a first potential detection unit that detects a potential is brought into a non-contact state with the first measured unit, and the potential of the first measured unit is measured by the first potential measuring device.
The present invention provides a vacuum processing method for measuring the potential of the first measured part by a first potential measuring device in the measuring step, the vacuum processing method being connected to the first potential measuring device, A first potential detection unit that detects a potential is connected to the first measured unit via a current limiting device that limits the flow of current, and the potential of the first measured unit is determined by the first potential measuring device. It is the vacuum processing method to measure.

The present invention is configured as described above, and the capacitance of the capacitor between the electrode built in the suction plate and the object to be processed is C, and the voltage of the electrode due to the residual charge when the object to be processed is grounded is V. Then, the residual charge Q between the electrode and the processing object can be expressed by the following formula (1).
Q = C ・ V …… (1)
If the distance between the electrode and the object to be processed is d and the proportionality constant is k, the residual adsorption force F due to the residual charge Q can be expressed by the following equation (2).
F = k · Q ² / d ² (2)
If the voltage V is measured, the residual charge Q and the residual adsorption force F can be obtained. In addition, the reverse voltage applied to the electrode in order to eliminate the residual charge Q is also obtained in advance by measurement or calculation corresponding to the measured residual charge Q, and the measured voltage V is opposite to the previously obtained residual charge Q. From the correspondence of the voltage, the reverse voltage to be applied can be obtained.

The residual charge of the processing object to be peeled off from the suction plate can be measured before peeling.
The optimum reverse voltage can be obtained for the processing object, and the residual charge of the processing object can be reduced.
Since it can be measured before peeling, the residual charge after applying the reverse voltage can be measured, and by applying the reverse voltage obtained based on the measurement result after applying the reverse voltage, the residual charge can be further reduced. can do.

The figure for demonstrating the vacuum processing apparatus of a 1st example The figure for showing the position of the through-hole formed in the monopolar first electrode The figure for showing the state where the processing target object has been arranged on the suction plate of the vacuum processing apparatus of the first example The figure for demonstrating the vacuum processing apparatus of a 2nd example The figure for showing the position of the through-hole formed in the bipolar first and second electrodes The figure for showing the state where the processing target object has been arranged on the suction plate of the vacuum processing apparatus of the second example The figure for demonstrating the vacuum processing apparatus of a 3rd example The figure for showing the state where the processing object is arranged on the suction plate of the vacuum processing apparatus of the third example The figure for demonstrating the vacuum processing apparatus of a 4th example The figure for showing the state where the processing object is arranged on the suction plate of the vacuum processing apparatus of the 4th example The figure for demonstrating the vacuum processing apparatus of a 5th example The figure for showing the state where the processing target object has been arranged on the suction plate of the vacuum processing apparatus of the fifth example The figure for demonstrating the vacuum processing apparatus of the 6th example which is a modification of a 5th example Equivalent circuit of unipolar adsorption device Equivalent circuit of bipolar adsorption device Equivalent circuit of another adsorption device of monopolar type Equivalent circuit of another single-pole type adsorption device The figure for demonstrating the vacuum processing apparatus of a prior art The figure which shows the state which mounted the board | substrate on the suction plate The figure which shows the state which made the pin contact the back of the substrate The figure which shows the board which has fallen from on the pin

<Vacuum processing equipment>
FIG. 1A, FIG. 2A, FIG. 3A, FIG. 4A, FIG. 5A, and FIG. 5C show vacuum processing apparatuses 11 to 16 of first to sixth examples of the present invention, respectively.
Each vacuum processing apparatus 11-16 has the vacuum chamber 20, the adsorption | suction apparatus 8 or 9, and the processing apparatus 18. As shown in FIG.
Each suction device 8 or 9 of the vacuum processing apparatuses 11 to 16 of the first to sixth examples has a suction plate 21 or 22 whose surface is insulative.

1C, FIG. 2C, FIG. 3B, FIG. 4B, FIG. 5B, and FIG. 5C show a state in which the processing object 23 is placed on the suction plate 21 or 22.
The suction plates 21 and 22 have an insulating plate 27 in which an insulator is formed into a plate shape.

  The suction plate 21 of the vacuum processing apparatus 11 of the first example is a monopolar type, the first electrode 2 is disposed inside the insulating plate 27, and the vacuum processing apparatuses 12 to 16 of the second to sixth examples. The adsorption plate 22 is a bipolar type, and the first electrode 2 a and the second electrode 2 b are disposed inside the insulating plate 27.

  The processing object 23 disposed on the suction plates 21 and 22 is in contact with the insulating plate 27, and the first electrodes 2 and 2 a sandwich the part or all of the insulating plate 27 between them. The second electrode 2b is also disposed on the same surface as the processing object 23 facing the first electrode 2a with a part or all of the insulating plate 27 interposed therebetween. It is made to face without contact.

  A base 73 is disposed on the bottom surface of the vacuum chamber 20, and a temperature adjusting device 38 is disposed on the base 73. The suction plates 21 and 22 are disposed on the temperature adjustment device 38 in contact with the temperature adjustment device 38.

  Connected to the first electrodes 2 and 2a are first power supply wires 10 and 10a which are coated metal wires, and the first power supply wires 10 and 10a are provided on the wall surface (here, the bottom wall surface) of the vacuum chamber 20. The portion led out to the outside of the vacuum chamber 20 of the first power supply wires 10 and 10a is the first opening / closing device 7 or 7a. To the suction power source 24 or 25.

  Similarly, the second electrode 2b is connected to a second power supply wiring 10b which is a coated metal wiring, and the second power supply wiring 10b is a terminal provided on the wall surface (here, the bottom wall surface) of the vacuum chamber 20. The portion led out to the outside of the vacuum chamber 20 is connected to the suction power source 25 via the second opening / closing device 7b.

  The first opening / closing device 7, 7a and the second opening / closing device 7b are two-terminal switching devices, and have an open state in which the electrical connection between the two terminals is interrupted and a closed state in which the two terminals are electrically connected. It can be switched.

  By means of the first power supply wiring 10, 10 a, one terminal of the first switchgear 7, 7 a is electrically connected to the first electrode 2, 2 a, and the other terminal is electrically connected to the suction power supply 24 or 25. The first electrodes 2 and 2a and the suction power sources 24 and 25 are electrically connected when the first opening / closing devices 7 and 7a are closed, and are electrically disconnected when they are open.

  Similarly, one terminal of the second opening / closing device 7b is connected to the second electrode 2b and the other terminal is connected to the suction power source 25 by the second power supply wiring 10b. Are electrically connected when the second opening / closing device 7b is closed, and are electrically disconnected when the second opening / closing device 7b is open.

  The voltage output from the suction power sources 24 and 25 is applied to the first electrodes 2 and 2a when the first switching devices 7 and 7a are in the closed state. The voltage output from the suction power supply 25 is applied to the second electrode 2b when the second opening / closing device 7b is closed.

  When the first and second switching devices 7a and 7b are in the closed state, the suction power source 25 connected to the bipolar suction device 9 has a voltage applied to one or both of the first electrode 2a and the second electrode 2b. The voltage of the same value or the voltage of different values (including voltages of different polarities) can be applied when both are applied.

  The processing object 23 and the first electrode 2 arranged on the monopolar adsorption plate 21 are parallel to each other, and the processing object 23 arranged on the bipolar adsorption plate 22 and the first and second electrodes 2a, Each of 2b is a flat plate.

An insulator constituting the insulating plate 27 is disposed between the processing object 23 and the first electrodes 2 and 2a and between the processing object 23 and the second electrode 2b. A first capacitor is formed between the first electrode 2 and the second electrode 2a, and a second capacitor is formed between the processing object 23 and the second electrode 2b.
The first and second capacitors when the processing object 23 is disposed on the bipolar suction plate 22 are connected in series.

<Arrangement procedure>
Next, a procedure for arranging the processing object 23 on the suction plates 21 and 22 will be described.
The vacuum chamber 20 is provided with a carry-in port 74 a and a carry-out port 74 b, and the vacuum vessel 20 is provided with a vacuum exhaust device 31.
The carry-in port 74a and the carry-out port 74b are closed, and the inside of the vacuum chamber 20 is evacuated by the evacuation device 31 to make a vacuum atmosphere. The evacuation device 31 continuously evacuates the inside of the vacuum chamber 20.

A pre-stage tank 30a is arranged on the pretreatment side of the vacuum treatment performed in the vacuum tank 20, and a post-stage tank 30b is arranged on the post-treatment side. The pre-stage tank 30a and the post-stage tank 30b are each in a vacuum atmosphere. Yes.
When the carry-in port 74a is opened, the inside of the vacuum tank 20 is connected to the inside of the front-stage tank 30a, and when the carry-out port 74b is opened, the inside of the vacuum tank 20 is connected to the inside of the back-stage tank 30b. ing.

  When vacuum processing is performed inside the vacuum chamber 20, first, the carry-in port 74a is opened while the vacuum atmosphere inside the vacuum chamber 20 is maintained, and a processing object (here, a semiconductor substrate) located inside the front-stage chamber 30a. Or a substrate such as a glass substrate on which a metal thin film is formed) is carried into the vacuum chamber 20.

A lifting device 75 is disposed outside the vacuum chamber 20, and a lifting member 76 having an upper end disposed inside the vacuum chamber 20 is attached to the lifting device 75.
The suction plates 21 and 22 and the temperature adjustment device 38 are provided with a plurality of through holes 36, and pins 40 each having a lower end fixed to the elevating member 76 are inserted into each through hole 36. .
FIG. 1B shows the positions of the through holes 36 formed in the monopolar first electrode 2, and FIG. 2B shows the positions of the through holes 36 formed in the bipolar first and second electrodes 2a and 2b. Indicates the position.

When the elevating device 75 operates, the elevating member 76 moves up and down, and accordingly, the pin 40 also moves up and down. Reference numeral 72 denotes a space inside the table 73 in which the elevating member 76 moves up and down. Reference numeral 79 denotes bellows, and the atmosphere inside the vacuum chamber 20 is maintained by the bellows.
Each pin 40 is raised by the lifting device 75, the upper end is positioned above the surface of the suction plates 21, 22, and the processing target 23 carried into the vacuum chamber 20 is placed on the pin 40.

  Next, when the pin 40 is lowered and the upper end is positioned below the surface of the suction plates 21 and 22, the processing object 23 on the pin 40 gets on the suction plates 21 and 22. FIG. 1C, FIG. 2C, FIG. 3B, FIG. 4B, and FIG. 5B show the state. The carry-in port 74a is closed.

<Adsorption procedure>
Next, a vacuum processing procedure for the processing object 23 will be described.
The processing device 18 includes a processing gas introduction device 32, and the processing device 18 contains charged processing gas such as plasma processing gas or ionized processing gas in the vacuum atmosphere of the vacuum chamber 20. Has been able to let you. The charged processing gas may be introduced into the vacuum atmosphere of the vacuum chamber 20 from the processing gas introduction device 32, or the processing gas introduced into the vacuum atmosphere of the vacuum chamber 20 from the processing gas introduction device 32 by the processing device 18 It may be charged.

  The vacuum chamber 20 is connected to the ground potential, and the ground member located in the vacuum chamber 20 and connected to the same ground potential as the vacuum chamber 20 is exposed inside the vacuum chamber 20. Here, the inner wall surface of the vacuum chamber 20 is exposed to a vacuum atmosphere, and is used as a ground member 49.

In order to attract the processing object 23 with the monopolar suction plate 21, it is necessary to connect the processing object 23 to a constant potential such as a ground potential.
For example, a conductive probe may be brought into contact with the processing object 23 arranged on the suction plate 21 and the processing object 23 may be connected to the ground potential via the probe. 11, when a charged processing gas is contained in the vacuum atmosphere, the charged processing gas comes into contact with the ground member 49 and the processing target 23, and the processing target 23 is electrically connected to the grounding member 49. Becomes ground potential.

  Therefore, in the vacuum processing apparatus 11 of the first example, the first opening / closing apparatus 7 is closed and the first electrode 2 is connected to the suction power source 24 in a state where the charged processing gas is contained in the vacuum atmosphere, and the suction power source 24 takes the suction. When the voltage is output, an adsorption voltage is applied to the first electrode 2, and the first capacitor formed by the processing object 23 and the first electrode 2 is charged with the adsorption voltage. As a result, the processing object 23 is attracted to the first electrode 2 by electrostatic force, so that the processing object 23 is attracted to the insulating plate 27.

  In the adsorbed state, the thermal resistance between the processing object 23 and the insulating plate 27 is smaller than that in the non-adsorbed state, and the temperature of the processing object 23 is controlled by the temperature adjustment device 38. However, vacuum processing is performed by the processing device 18.

In the bipolar type suction device 9 provided in the vacuum processing devices 12 to 16 of the second to sixth examples, the first and second capacitors formed when the processing object 23 is arranged on the suction plate 22 are When the first switchgear 7a and the second switchgear 7b are closed in series, the one end and the other end of the capacitor formed by the series connection are connected to the suction power source 25.
Accordingly, when different voltages are applied from the adsorption power supply 25 to the first electrode 2a and the second electrode 2b, the first and second capacitors can be charged.

  Here, one of the first electrode 2a and the second electrode 2b outputs a negative voltage, and the other outputs a positive voltage, so that the processing object 23 is not connected to the ground potential. An adsorption voltage is applied between the first electrode 2a and the second electrode 2b, a first capacitor between the processing object 23 and the first electrode 2a, and a second capacitor between the processing object 23 and the second electrode 2b. Is charged, the processing object 23 is attracted to the suction plate 22. Reference numeral 70 a in FIG. 2A and the like shows a circuit for applying a voltage to the first electrode 2 a inside the adsorption power source 25 used in the bipolar adsorption device 9, and reference numeral 70 b denotes the first inside the adsorption power source 25. A circuit for applying a voltage to the two electrodes 2b is shown.

<Vacuum treatment>
The vacuum processing of the processing apparatus 18 will be described. The processing apparatuses 18 of the vacuum processing apparatuses 11 and 12 of the first example and the second example are provided in the cathode electrode 33 disposed in the vacuum chamber 20 and the cathode electrode 33. And a target 34.

A sputtering gas composed of a rare gas such as argon gas is used as the processing gas for the processing devices 18 of the vacuum processing apparatuses 11 and 12 of the first and second examples. Processing gas is introduced inside.
When a negative voltage is applied to the cathode electrode 33 by the sputtering power source 35 while introducing the processing gas, plasma of the processing gas is generated, the target 34 is sputtered, and a thin film grows on the surface of the processing object 23.

In the unipolar type adsorption plate 21, the charged argon gas in the plasma is a charged processing gas, the processing object 23 is electrically connected to the ground member 49, and the adsorption voltage is applied to the first electrode 2 from the adsorption power source 24. Is applied, the processing object 23 is adsorbed to the adsorption plate 21.
In the bipolar type adsorption plate 22, the treatment object 23 is adsorbed to the adsorption plate 22 by applying an adsorption voltage between the first and second electrodes 2 a and 2 b.

  In the vacuum processing apparatus 13 of the third example of FIG. 3B and the vacuum processing apparatuses 15 and 16 of the fifth and sixth examples of FIGS. 5B and 5C, the processing apparatus 18 includes a shower head 43 and a plasma power source 45. The processing gas introduction device 32 is connected to the shower head 43, and a processing gas that is a thin film raw material gas is introduced from the processing gas introduction device 32 into the vacuum atmosphere inside the vacuum chamber 20 through the shower head 43. Is done.

  The plasma power source 45 is connected to the shower head 43. When the plasma power source 45 is activated and a voltage is applied to the shower head 43, plasma of a processing gas is generated and a chemical reaction occurs on the surface of the processing target 23. A thin film is formed on the surface of the processing object 23 adsorbed on the adsorption plate 22.

  Since the processing gas contained in the plasma when forming the thin film is charged and the object to be processed 23 can be connected to the ground potential, the unipolar adsorption device 8 is used in the vacuum processing of the third and fifth examples. It can also be used for the devices 13 and 15.

In the vacuum processing apparatus 14 of the fourth example of FIG. 4B, the processing apparatus 18 includes a target 34 and an ion gun 71.
The ion gun 71 includes an ion generation device 46, an ion generation power supply 48, and a processing gas introduction device 32. A processing gas such as argon gas is introduced into the ion generation device 46 from the processing gas introduction device 32. Then, plasma of the processing gas is formed by the voltage supplied from the ion generation power supply 48, and the processing gas is ionized to generate a charged processing gas. The generated charged processing gas is accelerated and irradiated onto the target 34, and the target 34 is sputtered to form a thin film on the surface of the processing object 23 adsorbed on the adsorption plate 22.

  Since the charged processing gas formed by the processing device 18 of the vacuum processing apparatus 14 of the fourth example can also connect the processing object 23 to the ground potential, the unipolar adsorption device 8 is connected to the vacuum processing apparatus 14 of the fourth example. It can also be used.

  The vacuum processing apparatuses 11 to 16 of the present invention have a control device 39, and the processing device 18 is a processing object such as a thin film having a predetermined thickness formed after the operation is started by the control device 39. 23, when the control device 39 detects that the vacuum processing of 23 is finished, in the vacuum processing device 11 of the first example in which the suction device 8 is a monopolar type, the control device 39 is After discharging the charge by connecting the first electrode 2 to the ground potential, the operation of the processing device 18 is stopped, the first opening / closing device 7 is opened, and the first electrode 2 and the suction power source 24 are connected. The electrical connection is interrupted, and the first electrode 2 is placed in an electrically floating state.

  In the vacuum processing devices 12 to 16 of the second to sixth examples in which the suction device 9 is bipolar, the control device 39 stops the operation of the processing device 18, and the first and second electrodes 2 a, After discharging the charge by connecting 2b to the ground potential, the first switchgear 7a and the second switchgear 7b are opened, and the electrical connection between the first and second electrodes 2a, 2b and the suction power supply 25 is achieved. The connection is cut off, and the first and second electrodes 2a and 2b are placed in an electrically floating state.

<Measurement procedure>
Next, the procedure for measuring the residual charge will be described.
The vacuum processing apparatuses 11 to 15 of the present invention have a charged gas generation apparatus 19 that contains a conductive charging gas in the vacuum atmosphere of the vacuum chamber 20.
In the vacuum processing apparatuses 11 to 14 of the first to fourth examples, the processing apparatus 18 is used as a charged gas generation apparatus, and a noble gas or the like is supplied from the processing gas introduction apparatus 32 to the charged gas generation apparatus 19 (processing apparatus 18). A low-reactivity gas such as nitrogen gas is supplied, and the low-reactivity gas is charged in the charged gas generator 19 and released into the vacuum chamber 20 as a charged gas having conductivity. As a result, a conductive charged gas can be contained in the vacuum atmosphere of the vacuum chamber 20.

In the vacuum processing apparatus 15 of the fifth example, an ion gun having the same configuration as the ion gun 71 provided in the vacuum processing apparatus 14 of the fourth example is provided as the charged gas generation device 19.
The charged gas generation device 19 includes an ion generation device 46, an ion generation power supply 48, and a low-reactivity gas introduction device 42, and is controlled by the control device 39 from the low-reactivity gas introduction device 42. A low-reactive gas such as argon gas is introduced into the ion generator 46, and a plasma of the low-reactive gas is formed by the voltage supplied from the ion-generating power supply 48, and the low-reactive gas is ionized and charged. Reactive gas is generated.

The charged low reactive gas can be discharged into the vacuum chamber 20 as a conductive charged gas and can be contained in a vacuum atmosphere. The low reactive gas may be the same type of gas as the processing gas.
Therefore, in the vacuum processing apparatus 15 of the fifth example, the charged gas generation apparatus 19 can be operated without operating the processing apparatus 18, and the charged atmosphere having conductivity can be contained in the vacuum atmosphere.

  In the vacuum processing apparatuses 11 to 15 of the first to fifth examples, the conductive charged gas contained in the vacuum atmosphere comes into contact with the processing object 23 and the ground member 49 on the suction plates 21 and 22, The processing object 23 is connected to the ground potential.

  Here, in the vacuum processing apparatus 16 of the sixth example of FIG. 5C, a ground connection device 50 is provided instead of the charged gas generation device 19 of the vacuum processing apparatus 15 of the fifth example, and the control device 39 includes the ground connection device 50. Processing is performed by controlling the apparatus main body 51 and bringing the stylus 52 attached to the apparatus main body 51 and connected to the ground potential into contact with the front or back surface of the processing object 23 disposed on the suction plate 22 as the ground member 49. You may make it measure the electric potential of the 1st, 2nd electrodes 2a and 2b by setting the target object 23 to a grounding potential so that it may mention later.

Also in the case of the monopolar adsorption device 8, the residual charge of the first electrode 2 can be measured by bringing the stylus having the ground potential into contact with the object to be processed 23.
When the stylus 52 is used as the ground member 49 and the processing object 23 is connected to the ground potential, for example, if the vacuum processing apparatus 15 is an ion implantation apparatus, the stylus 52 is brought into contact with the processing object 23 to perform ion implantation. Convenient in that it can be processed. On the other hand, since the stylus 52 deteriorates when exposed to plasma, it is convenient if the vacuum processing performed on the processing object 23 is processing that does not expose the processing object 23 to plasma.

  When the processing object 23 is connected to the ground potential by the conductive charging gas or the ground connection device 50, the first opening / closing devices 7, 7 a are opened, and the first electrodes 2, 2 a and the adsorption power source 24, When the first electrode 2 and 2a are placed in an electrically floating state by cutting off the electrical connection with the first electrode 25, the first electrode 2 and 2a has a potential of a magnitude corresponding to the residual charge of the first capacitor. Appears.

  Similarly, when the processing object 23 is connected to the ground potential by the electrically conductive charged gas or the ground connection device 50, the second opening / closing device 7b is opened, and the second electrode 2b, the suction power source 25, When the second electrode 2b is placed in an electrically floating state by cutting off the electrical connection between the two, a potential having a magnitude corresponding to the residual charge of the second capacitor appears on the second electrode 2b.

  The unipolar adsorption device 8 includes a first signal wiring 17 connected to the first electrode 2, a first measured part 3 connected to the first signal wiring 17, and potentials of the first measured part 3. And a first potential measuring device 4 for measuring.

  In the bipolar adsorption device 9, the first signal wiring 17a connected to the first electrode 2a, the second signal wiring 17b connected to the second electrode 2b, and the first signal wiring 17a connected to the first signal wiring 17a. The first measured part 3a, the second measured part 3b connected to the second signal wiring 17b, the first potential measuring device 4a for measuring the potential of the first measured part 3a, and the second measured part 3b. And a second potential measuring device 4b for measuring the potential.

  Here, the first measured parts 3 and 3a and the second measured part 3b are exposed metal wires or exposed metal pieces, and the first measured parts 3 and 3a are the first power supply wiring 10, 10a is connected to a portion located outside the vacuum chamber 20, and a portion between the first power supply wirings 10 and 10a where the first electrodes 2 and 2a and the first measured portions 3 and 3a are connected is first. Similarly, the second measured part 3b is connected to a portion of the second power supply wiring 10b located outside the vacuum chamber 20, and the second power supply wiring 10b includes: A portion between the second electrode 2b and the second measured part 3b is connected to the second signal wiring 17b.

  The first potential measuring devices 4, 4 a and the second potential measuring device 4 b are surface potentiometers, and the first potential measuring devices 4, 4 a include the first potential detectors 5, 5 a, the first measuring device body 6, 6a, and the second potential measuring device 4b has a second potential detecting unit 5b and a second measuring device main body 6b.

  Reference numerals 44 and 44a are metal wirings connecting the first potential detectors 5 and 5a and the first measuring device bodies 6 and 6a, and reference numeral 44b is a second potential detector 5b and the second measuring device body 6b. Is a metal wiring for connecting the two.

The first potential detectors 5 and 5a are arranged in the vicinity of the first measured units 3 and 3a in a non-contact manner with the first measured units 3 and 3a, and the second potential detecting unit 5b It is non-contact with the part to be measured 3b and is disposed in the vicinity of the second part to be measured 3b.
The first potential detectors 5 and 5a detect the potentials of the first measured units 3 and 3a, generate potential signals indicating the detection results, and output the potential signals to the first measuring device bodies 6 and 6a.
The second potential detecting unit 5b detects the potential of the second measured portion 3b, generates a potential signal indicating the detection result, and outputs the potential signal to the second measuring device body 6b.

Based on the inputted potential signal, the first measuring device main bodies 6 and 6a obtain the polarity of the first electrodes 2 and 2a and the potential value based on the ground potential, and obtain the obtained polarity and potential value. Output to the control device 39.
Based on the input potential signal, the second measuring device main body 6b obtains a potential value based on the polarity of the second electrode 2b and the ground potential, and outputs the obtained polarity and potential value to the control device 39. To do.

The control device 39 determines the reverse voltage to be applied to the first electrodes 2 and 2a from the input polarity and potential values of the first electrodes 2 and 2a in order to erase the residual charges of the first electrodes 2 and 2a. Find the polarity and size.
In addition, the control device 39 to which the potential value of the second electrode 2b is input is used to erase the residual charge of the second electrode 2b from the input polarity and potential value of the second electrode 2b. Also obtain the polarity and magnitude of the reverse voltage to be applied to 2b.

The first measuring device bodies 6 and 6a obtain the polarity and magnitude of the reverse voltage to be applied to the first electrodes 2 and 2a based on the potential signal input from the first potential detectors 5 and 5a. 39, or the second measuring device main body 6b obtains the polarity and magnitude of the reverse voltage to be applied to the second electrode 2b based on the potential signal input from the second potential detector 5b. May be output to the control device 39.
In addition, the first potential detector 5a and the second potential detector 5b are connected to one measuring device body, and the polarity and potential values of the first and second electrodes 2a and 2b are connected to the measuring device body. May be measured.

<Disappearance of residual charge>
Next, a procedure for eliminating the residual charge will be described.
The control device 39 operates the charged gas generation device 19 or the ground connection device 50, and the first opening / closing device 7, in a state where the processing object 23 is connected to the ground potential by the conductive charged gas or the stylus 52. 7a is closed, and a reverse voltage having the polarity and magnitude obtained for erasing the residual charges of the first electrodes 2 and 2a is output from the suction power sources 24 and 25 to the first electrodes 2 and 2a. , 2a.

  In the vacuum processing apparatus 11 of the first example in which the adsorption apparatus 8 is a monopolar type, after a reverse voltage is applied to the first electrode 2, the supply of the charged gas into the vacuum atmosphere is stopped, and the carry-out port 74b is opened. The processing object 23 can be carried out to the rear tank 30b.

In the vacuum processing apparatuses 12 to 15 of the second to fifth examples in which the adsorption device 9 is a bipolar type, the control device 39 operates the charged gas generation device 19 or the ground connection device 50 so that the processing object 23 is conductive. And the control device 39 closes the second opening / closing device 7b and applies a reverse voltage to the first electrode 2a, or before applying the reverse voltage, or Simultaneously with the application, a reverse voltage having the polarity and magnitude obtained for erasing the residual charge of the second electrode 2b is output from the suction power supply 25 to the second electrode 2b, and the second electrode 2b is discharged. The reverse voltages of the first and second electrodes 2a and 2b may be obtained simultaneously.
When the potential of one of the first and second electrodes 2a and 2b is being measured, it is desirable that the first or second switching device 7a or 7b connected to the other is in an open state.

  In the unipolar adsorption device 8, the first opening / closing device 7 is opened in the state where the processing object 23 is connected to the ground potential, the potential of the first electrode 2 is measured, and from the measurement result measured immediately before, Obtaining the polarity and voltage value of the reverse voltage for extinguishing the residual charge, closing the first switching device 7, and repeating the procedure of outputting the reverse voltage obtained immediately before from the adsorption power source 24 to the first electrode 2, When the measured potential value of the first electrode 2 becomes a value within a predetermined potential range, the procedure for eliminating the residual charge with respect to the first electrode 2 is terminated, and the processing object 23 is peeled off from the suction plate 21. Can do.

  In the case of the bipolar adsorption device 9, as in the case of the monopolar type, the first switching device 7a is opened, the potential of the first electrode 2a is measured, and the residual charge is calculated from the measurement result obtained immediately before. The polarity and voltage value of the reverse voltage to be extinguished are determined, the first switching device 7a is closed, the procedure of outputting the reverse voltage obtained immediately before from the suction power source 25 to the first electrode 2a is repeated, and the processing target With the object 23 connected to the ground potential, the second switchgear 7b is opened, the potential of the second electrode 2b is measured, and the polarity of the reverse voltage for eliminating the residual charge from the measurement result measured immediately before And the second switching device 7b are closed, the procedure of outputting the reverse voltage obtained immediately before from the adsorption power source 25 to the second electrode 2b is repeated, and the measured potential value of the first electrode 2a The value of the potential of the second electrode 2b is a predetermined potential range. Upon reaching the value of the inner, first, second electrodes 2a, terminates the extinction procedure of the residual charge for 2b, and the processing object 23 can be separated from the movable plate 22.

FIG. 6A is an equivalent circuit regarding the first electrode 2 of the unipolar adsorption device 8, and reference numeral 29 indicates a first capacitor formed by the first electrode 2 and the processing object 23. Reference numeral 77 indicates that when the charged gas is contained in a vacuum atmosphere, the processing object 23 is connected to the ground potential (in this example, connected to the ground member 49), the supply of the charged gas is stopped, and the vacuum atmosphere is set. When the charged gas is not contained, it is an equivalent opening / closing member that electrically separates the processing object 23 from the ground potential.
When the equivalent opening / closing member 77 is closed, the terminal of the first capacitor 29 on the processing object 23 side is connected to the ground potential.

FIG. 6B is an equivalent circuit relating to the first and second electrodes 2 a and 2 b of the bipolar adsorption device 9, and reference numeral 29 a indicates a first capacitor formed by the first electrode 2 a and the processing object 23. Reference numeral 29b denotes a second capacitor formed by the second electrode 2b and the processing object 23. Reference numeral 78 indicates that when the charged gas is contained in the vacuum atmosphere, the object to be processed 23 is connected to the ground potential (in this example, connected to the ground member 49), the supply of the charged gas is stopped, and the vacuum atmosphere is charged. It is an equivalent opening / closing member that indicates that the processing object 23 is electrically disconnected from the ground potential when the gas is not contained.
The terminals on the processing object 23 side of the first and second capacitors 29a and 29b are connected to the ground potential when the equivalent opening / closing member 78 is closed.

  FIG. 6C is an equivalent circuit of another example of the unipolar adsorption device 8, and a first signal wiring 17 for branching is electrically connected to the first power supply wiring 10. The first measured part 3 is electrically connected to the first signal wiring 17. The first power supply wiring 10 between the position of the first power supply wiring 10 to which the first signal wiring 17 for branching is connected and the first electrode 2 is also used as the first signal wiring 17.

  Even in the unipolar adsorption device 8 of the equivalent circuit of FIG. 6C, the potential of the first electrode 2 is measured by detecting the potential of the first measured portion 3 by the non-contact first potential detecting portion 5, A reverse voltage can be obtained from the measurement result and applied. Further, first and second signal wirings 17a and 17b for branching are respectively connected to the first and second power supply wirings 10a and 10b of the bipolar adsorption device 9, and first and second for branching. The first and second measured parts 3a and 3b are electrically connected to the signal wirings 17a and 17b, and the potentials of the first and second measured parts 3a and 3b are set to the first and second potential detecting parts 5a and 5b. By detecting by this, the potential of the first and second electrodes 2a and 2b can be measured, the reverse voltage can be obtained from the measurement result, and applied to the first and second electrodes 2a and 2b.

FIG. 6D is an equivalent circuit of another example of the unipolar adsorption device 8, and the first potential detection unit 5 is connected by a current limiting device 37 having a high impedance of 10 ¹⁰ Ω or more for limiting the flowing current. This is an equivalent circuit when the first potential detector 5 is electrically connected to the first electrode 2 by being connected to the first power supply wiring 10.

  Also here, the first signal wiring 17 is partly shared with the first power supply wiring 10. As in this equivalent circuit, the first potential detector 5 of the unipolar adsorption device 8 may be electrically connected to the first electrode 2 via the current limiting device 37, or the bipolar adsorption device 9. The first and second potential detectors 5a and 5b may be connected to the first and second electrodes 2a and 2b through separate current limiting devices 37, respectively. The first and second potential detectors 5, 5 a and 5 b detect the potentials of the first and second signal wirings 17, 17 a and 17 b via the current limiting device 37, so that the first and second electrodes 2 and 2 a are detected. , 2b is measured, and a reverse voltage is obtained and applied to the first and second electrodes 2, 2a, 2b.

  The vacuum processing apparatuses 11 to 16 of the first to sixth examples described above are apparatuses that form a thin film on the surface of the processing object 23, but various apparatuses such as an etching apparatus that etches the surface of the processing object 23. Is included.

  In the vacuum processing apparatuses 11 to 16 described above, the first and second measured parts 3, 3a, 3b are provided outside the vacuum chamber 20, and the first and second measured parts 3, 3a, 3b are provided. The first and second potential detectors 5, 5 a, 5 b can be arranged outside the vacuum chamber 20, so that the first and second potential detectors 5, 5 a, 5 b It is not affected by vacuum processing and has a long life. However, the suction device and the vacuum processing device in which the first and second measured parts 3, 3 a, 3 b are provided inside the vacuum chamber 20 have no advantage, but are included in the present invention.

  Further, in the vacuum processing apparatuses 11 to 16 of the first to sixth examples described above, a charged gas having conductivity is contained in a vacuum atmosphere, and the first and second electrodes 2 and 2a corresponding to the residual charges are included. When measuring the electric potential of 2b, it is desirable that the charged gas generator 19 generates a charged gas having conductivity using a DC voltage. During the measurement of the potential, the measurement can be performed without stopping the AC voltage.

  The first and second measuring device bodies 6, 6a, 6b include devices that operate based on various measurement principles such as a vibration capacity method.

  The first electrodes 2 and 2a and the second electrode 2b are each a single electrode, but the same voltage is applied to the first electrodes 2 and 2a and the second electrode 2b from the suction power sources 24 and 25. It can be composed of a plurality of electrodes.

  As described above, the residual charge is eliminated by applying a reverse voltage between the first electrode 2 and the ground potential or between the first and second electrodes 2a and 2b. However, the reverse voltage is not applied. Then, the processing device 18 is operated to generate plasma, the plasma is brought into contact with the processing object 23 and the ground member 49, and the processing object 23 is connected to the ground potential by the plasma and the grounding member 49. The residual charge of the object 23 may be eliminated.

  When discharging the first electrodes 2 and 2a, vacuum treatment is performed while adsorbing the processing object 23, and after measuring the residual charges of the first electrode 2 or the first and second electrodes 2a and 2b, The first switch 7 and 7a are closed, the ground potential is applied to the first electrodes 2 and 2a from the adsorption power sources 24 and 25, and the electric power obtained from the measurement result of the residual charge of the first electrode 2 is plasma. Is generated from a sputtering or plasma power source 35, 45, and is output from a cathode electrode 33 or a shower head 43 to generate a low-reactive gas plasma. And the residual charges of the first electrodes 2 and 2a are discharged and eliminated.

  When the second electrode 2b is neutralized by plasma, the second switching device 7b is closed, a ground potential voltage is applied from the adsorption power source 25 to the second electrode 2b, and the object to be processed is passed through the plasma and the adsorption power source 25. The residual charges of the second electrode 2b and the second electrode 2b are discharged and eliminated.

  In order to connect the first and second electrodes 2, 2a, 2b to the ground potential, a voltage of the ground potential may be applied to the first, second electrodes 2, 2a, 2b from the suction power sources 24, 25, respectively. However, instead of applying the ground potential voltage from the suction power sources 24 and 25, the first and second auxiliary switchgears are provided inside or outside the suction power sources 24 and 25, and the first auxiliary switchgear is closed. The second electrode 2b may be connected to the ground potential by connecting the first electrodes 2 and 2a to the ground potential and closing the second auxiliary switchgear. The residual charge may be discharged by connecting to the ground potential by a charged gas such as stylus or the like. In order to disconnect the first and second electrodes 2, 2 a, 2 b from the ground potential, the first and second auxiliary switchgear may be opened.

  In addition, after performing static elimination with plasma, the residual charges are obtained by measuring the potentials of the first and second electrodes 2, 2 a, 2 b that have undergone static elimination, and the measured potential is a value within a predetermined potential range. If not, plasma is generated with electric power having a magnitude corresponding to the potential of the measurement result, and static elimination is performed. As described above, even when the charge is removed by plasma, the measurement and the charge removal are repeated until the potential of the measurement result falls within a predetermined potential range, and the residual charge can be reduced.

The above is an example of a film forming apparatus such as a sputtering apparatus or a CVD apparatus, but the present invention is a vacuum process for processing an object to be formed in a vacuum atmosphere such as an etching apparatus or an ion implantation apparatus in addition to the film forming apparatus. Equipment is widely included.
Particularly, in the case of an ion implantation apparatus, when an object to be processed is placed in a vacuum atmosphere and ions are implanted into the object to be processed, the object to be processed is connected to the ground potential by the ground connection device 50 described above. The processing object can be connected to the ground potential by the ground connection device 50 without using plasma, and the potentials of the first and second electrodes 2, 2a, 2b can be measured.

  The members such as the charged gas generation device 19 constituting the vacuum processing devices 11 to 16 described above are controlled by the control device 39. If the value of the residual charge measurement result is abnormal, the control is performed. The processing procedure stored in the control device 39 is such that the device 39 outputs an alarm or the control device 39 discriminates the type of the processing object 23 and changes the condition of charge removal such as reverse voltage. By adding or changing, the operation of the vacuum processing apparatuses 11 to 16 can be added or changed.

The processing object 23 which is a semiconductor substrate to which a PI film (polyimide film) is attached is placed on the suction plate 21 of the vacuum processing apparatus 11 of the first example, the processing apparatus 18 is operated, and the processing object 23 is grounded. , The suction voltage is applied to the first electrode 2 to suck the processing object 23, the processing device 18 is stopped, the first opening / closing device 7 is opened, and the processing object 23 and the first electrode 2 was placed at a floating potential, and the potential of the first measured portion 3 was measured (condition 1).
Next, in this state, the object 23 to be processed was connected to the ground potential with a conductive charged gas (condition 2), and the potential of the first measured part 3 was measured.

  A reverse voltage is obtained from the measured potential value, the first switching device 7 is closed, the processing object 23 is connected to the ground potential by the charged gas generator 19, and the reverse voltage is applied to the first electrode 2. Next, the first switch 7 was opened while the processing object 23 was connected to the ground potential by the charged gas generator 19 (condition 3), and the potential of the first measured part 3 was measured.

The measurement results are shown in Table 1 below. For each condition, the number of measurements is three.
"Equivalent switchgear" is the presence or absence of electrically conductive charged gas. The electrical connection is interrupted when the object to be processed is not connected to the ground potential. When connected.

When the measured value was zero V, no current flowed through the first electrode 2 even when the processing object 23 was peeled off.
An accurate value is obtained by the potential measurement method used in the present invention, and it can be seen that the residual charge has disappeared.

2, 2a: First electrode 2b: Second electrode 4, 4a: First potential measuring device 4b: Second potential measuring device 5, 5a: First potential detecting unit 5b: Second potential detecting unit 6, 6a: first measuring device main body 6b: second measuring device main body 7, 7a: first opening / closing device 7b: second opening / closing device 8, 9 ... adsorption device 10, 10a: first power supply wiring 10b... Second power supply wirings 11 to 16... Vacuum processing devices 17 and 17a... First signal wiring 17b... Second signal wiring 18. 22 …… Adsorption plate 23 …… Processing object 24, 25 …… Adsorption power source 37 …… Current limiting device 39 …… Control device

Claims (31)

An insulating plate placed inside the vacuum chamber and placed in contact with the object to be treated;
A first electrode disposed on the insulating plate and facing the processing object in a non-contact manner;
A first power line connected to the first electrode and having electrical conductivity;
With the processing object on the insulating plate electrically connected to a ground potential, an adsorption voltage is applied to the first electrode by the adsorption power source via the first power supply wiring, and the processing object A monopolar adsorption device in which a capacity between an object and the first electrode is charged, and the object to be treated is adsorbed to the insulating plate,
Provided in the first power supply wiring, when the closed state is established, the first electrode and the adsorption power supply are electrically connected, and when opened, the electrical connection between the first electrode and the adsorption power supply is interrupted. A first opening and closing device
A first measured part electrically connected to the first electrode by a first signal wiring and disposed outside the vacuum chamber;
A first potential measuring device for measuring a potential of the first measured part;
The first potential measuring device is electrically connected to a grounding member connected to a ground potential, the first opening / closing device is opened, and the first electrode is electrically floating. An adsorption device having a control device that causes the first measured portion to measure the potential of the first measured portion. An insulating plate placed inside the vacuum chamber and placed in contact with the object to be treated;
A first electrode and a second electrode which are arranged on the insulating plate and face each other in a non-contact manner;
A first power line connected to the first electrode and having electrical conductivity;
A second power supply line connected to the second electrode and having electrical conductivity;
Applying an adsorption voltage between the first electrode and the second electrode by an adsorption power source via the first power supply line and the second power supply line, and the processing object disposed on the insulating plate and the A bipolar adsorption device that charges a capacity between the first electrode and between the treatment object and the second electrode, and adsorbs the treatment object on the insulating plate;
Provided in the first power supply wiring, when the closed state is established, the first electrode and the adsorption power supply are electrically connected, and when opened, the electrical connection between the first electrode and the adsorption power supply is interrupted. A first opening and closing device
A first measured part that is electrically connected to the first electrode by a first signal wiring and disposed outside the vacuum chamber;
A first potential measuring device for measuring a potential of the first measured part;
The first potential measuring device is electrically connected to a grounding member connected to a ground potential, the first opening / closing device is opened, and the first electrode is electrically floating. An adsorption device having a control device that causes the first measured portion to measure the potential of the first measured portion.   3. The suction device according to claim 1, wherein when measuring the potential of the first measured part, the processing object is brought into contact with the grounding member by the control device.   When measuring the potential of the first measured part, the control device contains a charged gas having conductivity in the vacuum atmosphere of the vacuum chamber, and the object to be processed is applied to the grounding member by the charged gas. The adsorption device according to claim 1, wherein the adsorption device is electrically connected. A charged gas generating device that generates the charged gas, contacts the processing object, and electrically connects the processing object to the ground member;
The adsorption device according to claim 4, wherein the charged gas generation device generates the charged gas under the control of the control device.   The adsorption device according to claim 5, wherein the charged gas generation device uses a processing device that processes the object to be processed in the vacuum chamber.   The control device calculates a reverse voltage based on a measurement result measured by the first potential measuring device, closes the first switching device, and outputs the reverse voltage from the adsorption power source to the first electrode. The adsorption device according to claim 1, wherein the first electrode is neutralized.   The control device generates plasma with electric power having a magnitude based on the measurement result measured by the first potential measuring device, contacts the object to be processed and connects to the ground potential, and closes the first switching device. The adsorption device according to any one of claims 1 to 6, wherein the first electrode is grounded and the first electrode is neutralized. The first potential measuring device detects a potential of the first measured part and generates a potential signal according to the magnitude of the detected potential;
A first measuring device body that receives the potential signal and obtains a potential value indicated by the potential signal;
Have
The adsorption device according to any one of claims 1 to 8, wherein the first potential detection unit detects a potential of the first measurement unit in a state of non-contact with the first measurement unit. The first potential measuring device detects a potential of the first measured part and generates a potential signal according to the magnitude of the detected potential;
A first measuring device body that receives the potential signal and obtains a potential value indicated by the potential signal;
A current limiting device for limiting the flow of current;
Have
The said 1st electric potential detection part detects the electric potential of said 1st to-be-measured part in the state which contacted said 1st to-be-measured part via the said current limiting apparatus. Adsorption device.   The suction device according to claim 1, wherein at least a part of the first signal wiring is the first power supply wiring. A vacuum chamber;
An insulating plate disposed inside the vacuum chamber and disposed in contact with a processing object;
A first electrode disposed on the insulating plate and facing the processing object in a non-contact manner;
A first power line connected to the first electrode and having electrical conductivity;
An adsorption power source connected to the first electrode by the first power wiring;
An evacuation device for making the inside of the vacuum chamber a vacuum atmosphere;
A processing apparatus for processing the object to be processed in the vacuum atmosphere;
A grounding member at a ground potential;
Have
A vacuum processing apparatus that applies an adsorption voltage to the first electrode by the adsorption power source, adsorbs the processing object electrically connected to a ground potential, and processes the object by the processing apparatus,
Provided in the first power supply wiring, when the closed state is established, the first electrode and the adsorption power supply are electrically connected, and when opened, the electrical connection between the first electrode and the adsorption power supply is interrupted. A first opening and closing device
A first measured part electrically connected to the first electrode by a first signal wiring and disposed outside the vacuum chamber;
A first potential measuring device for measuring a potential of the first measured part;
A control device for electrically connecting the object to be processed to the grounding member and causing the first potential measuring device to measure the potential of the first measured part in a state where the first opening / closing device is opened. When,
A vacuum processing apparatus. A vacuum chamber;
An insulating plate disposed inside the vacuum chamber and disposed in contact with a processing object;
A first electrode and a second electrode which are arranged on the insulating plate and face each other in a non-contact manner;
A first power line connected to the first electrode and having electrical conductivity;
An adsorption power source connected to the first electrode by the first power wiring;
An evacuation device for making the inside of the vacuum chamber a vacuum atmosphere;
A processing apparatus for processing the object to be processed in the vacuum atmosphere;
Have
A vacuum processing apparatus that applies an adsorption voltage between the first electrode and the second electrode by the adsorption power source, adsorbs the object to be processed disposed on the insulating plate, and processes the object by the processing apparatus. ,
Provided in the first power supply wiring, when the closed state is established, the first electrode and the adsorption power supply are electrically connected, and when opened, the electrical connection between the first electrode and the adsorption power supply is interrupted. A first opening and closing device
A first measured part electrically connected to the first electrode by a first signal wiring and disposed outside the vacuum chamber;
A first potential measuring device for measuring a potential of the first measured part;
The object to be processed is electrically connected to a ground member connected to a ground potential, and the first potential measuring device is connected to the potential of the first measured part in a state where the first switch is opened. A control device for measuring
A vacuum processing apparatus.   14. The vacuum processing apparatus according to claim 12, wherein when the potential of the first measured part is measured, the processing object is brought into contact with the grounding member by the control device.   When measuring the potential of the first measured part, the control device contains a charged gas having conductivity in the vacuum atmosphere of the vacuum chamber, and the object to be processed is applied to the grounding member by the charged gas. The vacuum processing apparatus of any one of Claim 12 or Claim 13 electrically connected. A charged gas generating device that generates the charged gas, contacts the processing object, and connects the processing object to the ground member;
The vacuum processing apparatus according to claim 15, wherein the charged gas generation device generates the charged gas under the control of the control device.   The vacuum processing apparatus according to claim 16, wherein the processing apparatus is used as the charged gas generation apparatus.   The control device calculates a reverse voltage based on a measurement result measured by the first potential measuring device, closes the first switching device, and outputs the reverse voltage from the adsorption power source to the first electrode. The vacuum processing apparatus according to claim 12, wherein the first electrode is neutralized.   The control device generates plasma with electric power having a magnitude based on the measurement result measured by the first potential measuring device, contacts the object to be processed and connects to the ground potential, and closes the first switching device. The vacuum processing apparatus according to claim 12, wherein the first electrode is grounded and the first electrode is neutralized. The first potential measuring device detects a potential of the first measured part and generates a potential signal according to the magnitude of the detected potential;
A main body of the measuring device which receives the potential signal and obtains the value of the potential indicated by the potential signal;
Have
The vacuum processing apparatus according to any one of claims 12 to 19, wherein the first potential detection unit detects the potential of the first measurement target portion in a non-contact state with the first measurement target portion. The first potential measuring device detects a potential of the first measured part and generates a potential signal according to the magnitude of the detected potential;
A main body of the measuring device which receives the potential signal and obtains the value of the potential indicated by the potential signal;
A current limiting device for limiting the flow of current;
Have
20. The first potential detection unit detects the potential of the first measured unit in a state in which the first measured unit is in contact with the first measured unit via the current limiting device. Vacuum processing equipment.   The vacuum processing apparatus according to any one of claims 12 to 21, wherein at least a part of the first signal wiring is the first power supply wiring. A vacuum atmosphere forming step for forming a vacuum atmosphere in the vacuum chamber;
An arrangement step of arranging a processing object on an insulating plate arranged in the vacuum chamber;
A first electrode disposed on the insulating plate and facing the processing object in a non-contact manner is connected to an adsorption power source, an adsorption voltage is applied from the adsorption power source to the first electrode, and the first electrode is disposed on the insulation plate and ground potential A vacuum processing step of processing the processing object while adsorbing the processing object electrically connected to the insulating plate;
A vacuum processing method comprising:
Including a charged gas having conductivity in the vacuum atmosphere,
A grounding step of electrically connecting the object to be treated to a grounding member connected to a ground potential;
The first electrode is electrically disconnected from the adsorption power source to electrically float the first electrode, and is connected to the first electrode by a first signal wiring and is disposed outside the vacuum chamber. And a measuring step for measuring the potential of the measuring section. A vacuum atmosphere forming step for forming a vacuum atmosphere in the vacuum chamber;
An arrangement step of arranging a processing object on an insulating plate arranged in the vacuum chamber;
A first electrode and a second electrode that are arranged on the insulating plate and face each other in a non-contact manner are connected to an adsorption power source, and an adsorption voltage between the adsorption electrode and the first electrode and the second electrode A vacuum processing step of processing the processing object while adsorbing the processing object disposed on the insulating plate to the insulating plate;
A vacuum processing method comprising:
Including a charged gas having conductivity in the vacuum atmosphere, and electrically connecting the object to be processed to a ground member connected to a ground potential;
Measurement that electrically disconnects the first electrode from the adsorption power source, and is electrically connected to the first electrode by a first signal wiring, and measures the potential of a first measured part disposed outside the vacuum chamber And a vacuum processing method.   The vacuum processing method according to any one of claims 23 and 24, wherein when the potential of the first measured part is measured, the processing object is brought into contact with the grounding member. In the vacuum processing step, a charged processing gas having conductivity is contained in the vacuum atmosphere,
The vacuum processing method according to any one of claims 23 and 24, wherein the processing gas is brought into contact with the object to be processed and the grounding member to electrically connect the object to be processed to the grounding member. .   27. The vacuum processing method according to claim 26, wherein the charged processing gas is the charged processing gas.   24. A reverse voltage is calculated based on a measurement result of the measurement step, the first electrode is electrically connected to the adsorption power source, and the reverse voltage is output from the adsorption power source to the first electrode. The vacuum processing method of any one of Claim 27.   A plasma is generated with electric power having a magnitude based on the measurement result of the potential of the first measured part, brought into contact with the object to be processed, and the first electrode is connected to a ground potential to neutralize the first electrode. Item 28. The vacuum processing method according to any one of Items 23 to 27. 30. The vacuum processing method according to any one of claims 23 to 29, wherein in the measurement step, the potential of the first measured part is measured by a first potential measuring device.
The first potential measuring device connected to the first potential measuring device and detecting the potential of the first measured device in a non-contact state with the first measured device, the first potential measuring device, The vacuum processing method which measures the electric potential of said 1st to-be-measured part. 30. The vacuum processing method according to any one of claims 23 to 29, wherein in the measurement step, the potential of the first measured part is measured by a first potential measuring device.
A first potential detector connected to the first potential measuring device, for detecting the potential of the first measured portion, connected to the first measured portion via a current limiting device for limiting a current flow; The vacuum processing method which measures the electric potential of said 1st to-be-measured part by said 1st electric potential measuring device.

Images