KR20100121980A - Wafer monitering device and method for plasma doping apparatus - Google Patents

Wafer monitering device and method for plasma doping apparatus Download PDF

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Publication number
KR20100121980A
KR20100121980A KR1020090040949A KR20090040949A KR20100121980A KR 20100121980 A KR20100121980 A KR 20100121980A KR 1020090040949 A KR1020090040949 A KR 1020090040949A KR 20090040949 A KR20090040949 A KR 20090040949A KR 20100121980 A KR20100121980 A KR 20100121980A
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South Korea
Prior art keywords
wafer
voltage value
feedback pin
chamber
voltage
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KR1020090040949A
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Korean (ko)
Inventor
정선호
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엘아이지에이디피 주식회사
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Priority to KR1020090040949A priority Critical patent/KR20100121980A/en
Publication of KR20100121980A publication Critical patent/KR20100121980A/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32412—Plasma immersion ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Plasma Technology (AREA)

Abstract

PURPOSE: A wafer monitoring device of a plasma doping device and a method thereof are provided to rapidly check whether a wafer is damaged or a loading process is in an abnormal state by detecting whether a wafer is in an abnormal state by measuring the voltage value of the wafer using a feedback pin. CONSTITUTION: A wafer loading stand(60) is located inside a chamber(50) and a wafer is located in the upper side. A pulse generator(67) applies a high voltage pulse to the wafer which is loaded in the wafer loading stand. A feedback pin(80) is included within the chamber and supplies a voltage to the wafer in the pulse generator. A wafer state determining part(70) determines whether a wafer is in an abnormal state by comparing a predetermined voltage value or an input voltage value with a voltage measuring value inputted from the feedback pin.

Description

Wafer monitoring device and method for plasma doping equipment {Wafer monitering device and method for plasma doping apparatus}

The present invention relates to an apparatus used in a wafer monitoring apparatus and method for a doping apparatus using plasma used in a semiconductor manufacturing process.

In the process of manufacturing a semiconductor product, the process of introducing impurities into a semiconductor wafer is to change the electrical characteristics by affecting the electrical conductivity of the material and is one of the important processes in the manufacturing process of the semiconductor product. Plasma doping equipment is a device for physically injecting impurities into a wafer after making impurities into ions.

Such plasma doping equipment is classified into capacitively coupled plasma (CCP) and inductively coupled plasma (ICP) according to a method of generating plasma.

The CCP method is a method of generating a plasma by using an RF electric field formed vertically between both electrodes by applying RF power to the parallel plate electrodes facing each other, and the ICP method is a raw material using an induction electric field induced by an RF antenna. It is a way to change the material into plasma.

1 schematically shows the configuration of the plasma doping equipment of the ICP method, which looks at a chamber 11 in which a wafer processing process is performed, and a wafer mount table on which a wafer S is mounted on an upper surface of the chamber 11. 12 is provided.

The wafer mounting table 12 is provided with a substrate electrode 20 so as to apply a negative high voltage pulse from the high voltage generator 31 and the pulser 32 to the wafer.

The gas supply apparatus 13 which supplies a raw material is provided in the upper part of the wafer mounting table 12. As shown in FIG.

The upper part of the chamber 11 is sealed by the dielectric plate 14, and the RF antenna 15 is installed on the upper part of the dielectric plate 14. The RF antenna 15 is connected to the RF power source 17, and a matching circuit 16 for impedance matching is installed between the RF antenna 15 and the RF power source 17.

The dielectric plate 14 serves to help transfer energy from the RF power source 17 to the plasma by inductive coupling by reducing capacitive coupling between the RF antenna 15 and the plasma.

The time-varying magnetic field in the vertical direction is generated by the RF power supplied from the RF power source 17 around the RF antenna 15, and the electric field in the horizontal direction is induced by the time-varying magnetic field inside the chamber 11. .

However, in the conventional plasma doping equipment as described above, since the state of the wafer S cannot be measured during the wafer doping process, an unnecessary process proceeds as the process continues even when the wafer is damaged, thereby increasing the cost loss. There is a problem.

That is, even if a wafer crack, arc generation, loading failure, etc., occurs before or during the doping process, since a device capable of measuring such a state is not configured, the doping process is performed in a state where the wafer S is damaged. In this case, the doping process is performed on the defective product, which causes a problem of wasting process time and cost loss.

The present invention has been made to solve the above problems, by configuring a means for confirming the abnormality of the wafer in the doping equipment, it is possible to quickly determine whether the wafer is damaged or loading problems, thereby minimizing waste of process time Another object is to provide a wafer monitoring apparatus and method for a plasma doping apparatus that can increase economics by reducing cost loss.

According to an aspect of the present invention, there is provided a wafer monitoring apparatus of a plasma doping apparatus, comprising: a chamber in which a process of depositing impurities on a wafer by generating plasma and ionizing an ionizable process gas; A wafer mount table positioned inside the chamber and having a wafer positioned on an upper surface thereof; A pulse generator for applying a high voltage pulse to the wafer loaded on the wafer mount; A feedback pin provided in the chamber and outputting a voltage applied to the wafer by the pulse generator; And a wafer state determination unit that compares the voltage measurement value input from the feedback pin with a preset voltage value or an input voltage value to determine an abnormal state of the wafer.

Here, the feedback pin is preferably configured such that the end portion thereof is exposed upward from the wafer mount.

The wafer state determination unit includes a comparator for comparing and determining a pulse voltage output from the pulse generator to the wafer and a voltage value input through the feedback pin, and a detector for determining and detecting a comparison signal of the comparator. It is preferable to be.

According to an aspect of the present invention, there is provided a wafer monitoring method of a plasma doping apparatus comprising: a first step of inputting a high voltage pulse to one side of a wafer loaded in a wafer mount in a chamber; A second step of outputting a voltage value transmitted through the wafer using a feedback pin at the other side of the wafer together with the first step; And a third step of determining an abnormal state of the wafer by comparing the voltage value output through the second step with a preset voltage value or an input voltage value of the first step.

Since the wafer monitoring apparatus and method of the plasma doping apparatus according to the present invention are configured to detect the abnormality of the wafer by measuring the voltage value of the wafer using a feedback pin, it is possible to promptly check whether the wafer is damaged or a loading failure problem. Thus, it is possible to minimize the waste of the process time, and to reduce the cost loss, thereby increasing the economics.

Hereinafter, exemplary embodiments of the present invention will be described with reference to the accompanying drawings.

The plasma doping apparatus may be applied to both capacitively coupled plasma (CCP) and inductively coupled plasma (ICP) doping apparatuses, which are classified according to a method of generating plasma.

2 is a diagram illustrating an ICP type doping apparatus equipped with a wafer monitoring apparatus according to the present invention. Hereinafter, an embodiment of the present invention will be described with reference to the ICP type doping apparatus.

The plasma doping apparatus as shown in the drawing is provided with a chamber 50 capable of performing a process in a vacuum state, and inside the chamber 50, a wafer mount table 60 on which a semiconductor wafer S is mounted is provided. It is provided.

In this case, the wafer mounting table 60 is preferably formed of an electrostatic chuck structure to stably chuck the wafer, and the substrate electrode 65 is provided to provide a high voltage pulse to the wafer.

The substrate electrode 65 is connected to the high voltage power supply 66 and the pulse generator 67. The high voltage power supply 66 is configured to provide a high voltage power, and the pulse generator 67 is connected to the high voltage power supply 66. It is configured to apply a high voltage pulse having a negative polarity to the substrate electrode 65.

Such a wafer mount 60 is provided with a feedback pin 80, the feedback pin 80 constitutes a wafer monitoring device to be described in detail below. The wafer monitoring device including the feedback pin 80 will be described in detail below.

A dielectric plate 52 is provided on an inner upper portion of the chamber 50 to form an airtight space in the chamber 50, and an RF antenna 54 is installed on the dielectric plate 52.

The RF antenna 54 is connected to the RF power supply unit 55 including the RF power supply unit 56 and the impedance matching unit 57 and configured to receive RF power.

Side of the chamber 50 is provided with a process gas supply unit 59 for supplying an ionizable process gas (hereinafter, referred to as 'dopant gas') containing a dopant material into the chamber 50.

In the plasma doping apparatus, when the wafer is supplied into the chamber 50 and the wafer S is loaded on the wafer mount table 60, the dopant gas is supplied into the chamber 50 through the process gas supply unit 59. In order to form a plasma in the chamber 50, RF power is applied from the RF power applying unit 55 to the RF antenna 54 provided on the dielectric plate 52.

At this time, the dopant gas supplied into the chamber 50 is ionized by the induced magnetic field generated by the RF antenna 50 to generate the inductively coupled plasma. At the same time, as the high voltage pulse is applied from the pulse generator 67 to the substrate electrode 65 of the wafer mount 60 on which the wafer S is mounted, a high voltage pulse is applied to the wafer S. The dopant gas ions are applied to the surface of the wafer S by the plasma generated by 54 to dop the impurities on the surface of the substrate.

The wafer monitoring apparatus which can detect the state of the wafer S before such a doping process or during and after the process will be described.

The wafer monitoring device is provided with a feedback pin 80 so as to be in contact with the wafer S mounted on the wafer mounting table 60 and to transmit the voltage measurement to the wafer state determination unit 70 which will be described later.

As shown in FIG. 3, the feedback pin 80 includes a contact pin 81 in contact with the wafer S. As shown in FIG.

The contact pins 81 are configured as conductor pins to protrude upward from the electrostatic chuck 62. In this case, the contact pins 81 may be vertically inserted into the electrostatic chuck 62 and the wafer mount 60. The pin mounting portion 63 of the hole structure is formed. At this time, it is preferable that the pin mounting portion 63 is provided with an insulator so as to be electrically insulated from the conductors formed in the wafer mounting table 60.

Reference numeral 83 denotes a pin support for supporting the contact pin 81 on the wafer mount 60. When the vacuum sealing 85 is formed between the pin support 83 and the contact pin 81, the sealing member 87 is provided between the pin support 83, the wafer mounting table 60, and the electrostatic chuck 62. It is preferable that is provided.

In the drawing of this embodiment, the structure in which one feedback pin 80 is provided on the wafer mounting table 60 is illustrated, but it is also possible to install and configure each of the feedback pins in a position that requires a plurality of feedback pins.

The contact pin 81 of the feedback pin 80 as described above detects the wafer state by outputting the voltage provided to the wafer S from the pulse generator 67 to the wafer state determination unit 70.

The wafer state determination unit 70 compares the measured voltage value applied from the pulse generator 67 to the wafer S through the feedback pin 80 and a preset comparison determination value to check whether the wafer is abnormal. You will be judged.

That is, when the voltage measurement value input to the wafer state determination unit 70 through the feedback pin 80 is input to the reference value or more, it is determined to be in a normal state, and when a value below the reference value is input, it is determined to be an abnormal state. This means that if the 5kv input value is normal, the wafer is judged to be abnormal when 4.1kv or 3.0kv is input.

The reason why the voltage measurement falls in an abnormal state is that when the wafer is damaged, such as a crack or an arc, the resistance is high, and thus the voltage value output through the feedback pin 80 is lowered. It is configured to detect.

4 and 5 are diagrams illustrating various embodiments of the wafer state determination unit 70. The pulse voltage output from the pulse generator 67 to the wafer S and the voltage input through the feedback pin 80 are illustrated. Comparators 71 and 71 'for comparing and determining values are configured, and detectors 73 and 73' for determining and detecting the signals of the comparators 71 and 71 'are shown.

4 shows a configuration in which the comparator 71 and the detector 73 are installed in series on a circuit between the pulse generator 67 and the wafer S. As shown in FIG.

FIG. 5 shows the result output from the detector 73 'by installing the comparator 71' and the detector 73 'in parallel on a circuit electrically connected to the pulse generator 67 and the wafer S. 75 shows an embodiment configured to monitor wafer status.

In the above-described embodiment of the present invention, a configuration in which the pulse generator applied to the wafer S from the pulse generator 67 is output through the feedback pin 80 to determine the state of the wafer has been described. Rather than the voltage applied to the wafer S in the pulse generator 67, a separate measurement voltage is applied to the wafer, the voltage state applied to the wafer is measured and compared with the preset reference voltage value. It may also be configured to detect the state of.

In addition, in the above-described embodiment of the present invention, the configuration in which the feedback pin is mounted on the wafer mounting table has been described. However, the feedback pin may be installed at another position in the chamber, that is, in a structure other than the wafer mounting table.

The technical ideas described in the embodiments of the present invention can be implemented independently, or in combination with each other. In addition, the present invention has been described through the embodiments described in the drawings and detailed description of the invention, which is merely exemplary, and those skilled in the art to which the present invention pertains various modifications and equivalent other embodiments from this It is possible. Accordingly, the technical scope of the present invention should be determined by the appended claims.

1 is a block diagram showing a conventional plasma doping equipment.

Figure 2 is a block diagram showing a plasma doping equipment equipped with a wafer monitoring apparatus according to the present invention.

FIG. 3 is a detailed view of portion “A” of FIG. 2 and illustrates a state where feedback pins are installed.

4 is a configuration diagram of an embodiment showing a configuration of a wafer state determination unit according to the present invention.

5 is a configuration diagram of another embodiment showing the configuration of a wafer state determination unit according to the present invention.

Claims (4)

A chamber in which plasma is generated to ionize the ionizable process gas to deposit impurities on the wafer; A wafer mount table positioned inside the chamber and having a wafer positioned on an upper surface thereof; A pulse generator for applying a high voltage pulse to the wafer loaded on the wafer mount; A feedback pin provided in the chamber and outputting a voltage applied to the wafer by the pulse generator; Wafer monitoring apparatus of the plasma doping apparatus comprising a wafer state determination unit for comparing the voltage measurement value input from the feedback pin with a predetermined voltage value or an input voltage value to determine the abnormal state of the wafer. The method according to claim 1, The feedback pin is a wafer monitoring device of the plasma doping equipment, characterized in that the end portion is configured to be exposed upward from the wafer mount. The method according to claim 1 or 2, The wafer state determination unit may include a comparator for comparing and determining a pulse voltage output from the pulse generator to the wafer and a voltage value input through the feedback pin, and a detector for determining and detecting a comparison signal of the comparator. Wafer monitoring device of the plasma doping equipment. A first step of inputting a high voltage pulse to one side of the wafer loaded on the wafer mount table in the chamber; A second step of outputting a voltage value transmitted through the wafer using a feedback pin at the other side of the wafer together with the first step; And a third step of determining an abnormal state of the wafer by comparing the voltage value output through the second step with a preset voltage value or an input voltage value of the first step. .
KR1020090040949A 2009-05-11 2009-05-11 Wafer monitering device and method for plasma doping apparatus KR20100121980A (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106206234A (en) * 2015-05-29 2016-12-07 东京毅力科创株式会社 Plasma processing apparatus and strippable substrate detection method
CN109872965A (en) * 2017-12-04 2019-06-11 北京北方华创微电子装备有限公司 A kind of bogey and reaction chamber

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106206234A (en) * 2015-05-29 2016-12-07 东京毅力科创株式会社 Plasma processing apparatus and strippable substrate detection method
CN109872965A (en) * 2017-12-04 2019-06-11 北京北方华创微电子装备有限公司 A kind of bogey and reaction chamber
CN109872965B (en) * 2017-12-04 2022-01-11 北京北方华创微电子装备有限公司 Bearing device and reaction chamber

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