JP6386876B2 - Manufacturing method and structure of resistor for current detection - Google Patents

Description

  The present invention relates to a method for manufacturing a current detection resistor and the like.

  It is well known to use a chip resistor having a very small resistance value of about milliohm for current detection. There is the following Patent Document 1 as a prior document disclosing the bonding between the resistor and the electrode.

JP 2000-114009 A

The use of a butt structure in which the end faces of the resistor and the electrode are butted has advantages such as a simplified structure. However, Patent Document 1 does not disclose a butt structure.
An object of this invention is to provide the manufacturing method suitable for mass production of the current detection resistor of a butt structure.

  According to one aspect of the present invention, a step of preparing a hoop-shaped or plate-shaped resistance material made of a resistance material and a hoop-shaped or plate-shaped electrode material having a higher conductivity than the resistance material; and the resistance material Forming a plurality of first portions having a large thickness and a second portion having a thickness smaller than the first portion; and forming a plurality of through holes in the electrode material; and the first portion and the through holes. And joining the resistance material and the electrode material, and punching or cutting so that the electrode material is disposed at both ends of the first portion, and the end surface of the first portion and the electrode material And forming a current detecting resistor which is bonded to the end face of the current detecting resistor. A method for manufacturing the current detecting resistor is provided. The size of the fitting part should be set to the same level.

It is preferable to have a step of forming a third portion shallower than the depth of the through hole in the electrode material.
The second portion and the third portion may be fitted together when the resistance material and the electrode material are joined. Both surfaces can be flush with each other as a fitted structure.
The first portion and the second portion are preferably formed in a line shape or a matrix shape.

In addition, the present invention is a first structure obtained by processing a hoop-shaped or plate-shaped resistance material made of a resistance material, and includes a plurality of thick first portions and a second thickness that is thinner than the first portions. This is a first structure in which the portions are alternately arranged.
Further, the present invention is a second structure obtained by processing a hoop-shaped or plate-shaped electrode material made of an electrode material, and a plurality of thin first portions and through-holes are alternately arranged. This is the second structure.
In addition, the present invention is a first structure obtained by processing a hoop-shaped or plate-shaped resistance material made of a resistance material, and includes a plurality of thick first portions and a second thickness that is thinner than the first portions. And a second structure obtained by processing a hoop-shaped or plate-shaped electrode material made of an electrode material, the plurality of first portions having a small thickness, It may be a structure in which the second structure in which the through holes are alternately arranged is fitted.

  According to the present invention, a current detection resistor having a butt structure can be mass-produced.

It is a perspective view which shows one structural example of the resistor of a butt structure. It is a perspective view which shows the structural example which mounted the resistor of the butt structure. FIG. 6 is a perspective view showing a structure in which the resistor side region of the electrode is lifted upward, which is a modification of FIG. 2. It is a perspective view of the electrode material of the resistor by the 1st Embodiment of this invention. It is a perspective view which shows a mode that the electrode material of FIG. 4A was processed. It is a perspective view of the resistance material of a resistor. It is a perspective view which shows a mode that the resistance material of FIG. 5A was processed. It is a perspective view which shows a mode that the resistance material of a resistor is inserted in an electrode material. It is a perspective view which shows a mode that the resistance material of the resistor was inserted in the electrode material. It is a perspective view which shows a mode that the electrode, a resistor, and an electrode form multiple protrusion area | regions where each side surface is joined from the structure of FIG. 6B. It is a perspective view which shows the state which cut | disconnected the electrode-resistor-electrode resistor structure from the structure of FIG. 6C. It is a perspective view which shows an example of the structure of the direction cut out by the process shown to FIG. 6C. It is a perspective view of the electrode material of the resistor by the 2nd Embodiment of this invention. It is a perspective view which shows a mode that the electrode material of FIG. 7A was processed. It is a perspective view which shows a mode that the resistance material of the resistor was processed. It is a perspective view which shows a mode that the resistance material of the resistor was processed. It is a perspective view which shows a mode that the 1st intermediate structure of FIG. 7B and the 2nd intermediate structure of FIG. 7C are combined. It is a perspective view which shows a mode that the electrode material and the resistance board were inserted. It is a perspective view which shows a mode that the electrode material and the resistance board were inserted. It is a perspective view which shows a mode that a predetermined area | region is cut out in the front-back direction of a line centering | focusing on a structure.

Hereinafter, a manufacturing technique of a current detection resistor according to an embodiment of the present invention will be described in detail with reference to the drawings.
FIG. 1 is a perspective view showing a configuration example of a resistor having a butt structure. The resistor shown in FIG. 1 has a resistor 1 and electrodes 5a and 5b to which both end faces are connected at both end faces 1a and 1b.

FIG. 2 is a perspective view showing a configuration example in which a resistor having a butt structure is mounted. The bottom surfaces of the electrodes 5a and 5b of the resistor shown in FIG. 1 are bonded to the lands 3a and 3b with solder or the like. The tips of the voltage detection wirings 12a and 12b and the voltage detection positions at both ends of the resistor are connected by bonding wires 9a and 9b. A detection current I flows through the resistor, and a voltage V obtained by multiplying the detection current I by the resistance value R of the resistor is extracted from the voltage detection wirings 12a and 12b to a voltage detection circuit (not shown).
FIG. 3 is a modification of FIG. 2 and has a structure in which the region on the resistor 1 side of the electrodes 5a and 5b is lifted to the upper side (the side opposite to the lands 3a and 3b). For example, Δh ₁ .
The resistor described above has a structure suitable for highly accurate current detection.

  Below, the manufacturing method of the resistor for electric current detection by this Embodiment for manufacturing the resistor which has the above butt | matching structures is demonstrated in detail.

(First embodiment)
First, the manufacturing method of the current detection resistor according to the first embodiment of the present invention will be described in detail. According to the manufacturing method of the present embodiment, a plurality of butt structures can be formed in a line shape.

  FIG. 4A is a perspective view of an electrode material 5 such as Cu. The electrode material 5 is a hoop-like or plate-like long material having a higher conductivity than the resistance material, and has a thickness Δt. In addition, an alignment hole 71 is provided along one side. FIG. 4B is a perspective view showing the structure 21 after the electrode material 5 of FIG. 4A is processed. For example, in the electrode material 5, the structure 21 is formed by a method such as pressing, cutting, or laser processing in the same direction as the direction in which the alignment holes 71 are arranged (referred to as a first direction).

In the structure 21, for example, when viewed from one surface (base region) 5 c of the electrode material 5, the first structure portions 7 a and the second structure portions 7 b are alternately arranged in the first direction. The first structure portion 7 a is a connecting portion that connects the band-like portions on both sides separated by the structure 21. The first structure portion 7a is a rectangular region having a width W1 and a length L1, and the electrode material 5 has a small thickness Δt (thickness Δt ₁ <Δt as will be described later). The second structure portion 7 b is a rectangular region having a width W <b> 1 and a length L <b> 2 and is a through hole penetrating the electrode material 5. A first structure portion 7a (third portion) and a second structure portion 7b are alternately arranged along the first direction.

FIG. 5A is a perspective view of a resistance material 1x such as Cu—Mn, Cu—Ni, or Ni—Cr. The resistance material 1x is a strip-shaped material having a thickness Δt and a width W1, for example, a plate-shaped resistance material is cut into a width W1, or a long linear material is processed so that the cross section is square. Or the like.
A plurality of thick first portions and second portions thinner than the first portions are alternately formed on the resistance material 1x.

FIG. 5B is a perspective view showing the structure 31 after processing the resistance material 1x of FIG. 5A. Finally, when combined with the structure 21, the structure 31 is formed by a method such as pressing, cutting, or laser processing so as to fit well. That is, the structure 31 is formed so that the third structure portion 11b (second portion) and the fourth structure portion 11a (first portion) are arranged (in a line) in the extending direction of the resistance material 1x. Has been. The third structure portion 11b has, for example, a width W1, a length L1, and a thickness Δt ₂ (Δt ₂ = Δt−Δt ₁ ). The fourth structure portion 11a has a width W1, a length L2, and a thickness Δt.

  As described above, after forming the intermediate structure (FIGS. 4B and 5B) for the electrode material 5 and the resistance material 1x, as shown in FIG. 6A, the first intermediate structure shown in FIG. Combine with the second intermediate structure shown. That is, the structure 21 and the structure 31 are arranged so as to be fitted in the surface direction, and the fitting process is actually performed. The first structure portion 7a and the third structure portion 11b face each other (the second portion and the third portion are fitted together), and the fourth structure portion 11a is fitted into the through hole that is the second structure portion 7b. . Since the width and length of the opposing portions are substantially the same, the structure 31 can be easily fitted into the structure 21. Then, the thickness becomes Δt in all regions.

  6B shows a structure in which the structure 21 and the structure 31 are fitted, FIG. 6B (a) is a perspective view corresponding to FIG. 6A, and FIG. 6B (b) shows the back side thereof. FIG. 6B (b) shows the fourth structure portion 11a exposed from the second structure portion 7b (through hole). Subsequently, after constructing such a structure, welding of the joint portion is performed by, for example, a laser beam (L51, L52) or an electron beam. Welding with laser beams (L51, L52) is applied along the joint portion between the structure 31 and the structure 21 from the side shown in FIG. 6B (a). Or it irradiates along the junction part of the structure 31 and the structure 21 from the side shown to FIG. 6B (b). Or you may irradiate from both sides of Drawing 6B (a) (b). As another method, pressure may be applied to the structures from the up-down direction (thickness direction) and / or the left-right direction (width direction) to join them by rolling or the like. In particular, the contact surfaces of the structure 21 and the structure 31 along the first direction are mainly joined. Furthermore, the side surface along the first direction in the fourth structure portion 11a and the structure 21 are favorably bonded. Thereby, the third intermediate structure (FIG. 6B) is formed. As shown, the upper and lower surfaces of such a structure are flat. In addition, since the third structure portion 11b and the first structure portion 7a are in contact with each other on the surface, it is possible to prevent misalignment or the like in the fitting structure of the third intermediate structure in FIG. In this case, a stable fitting structure can be maintained.

  Next, the first portion 11a is punched or cut so that the electrode material is disposed at both ends thereof. For example, as shown in FIG. 6C, the third intermediate structure is processed so as to leave a comb-like region protruding in a direction orthogonal to the first direction that is the arrangement direction of the structures. From the base region 5c where the positioning holes are formed, a plurality of protruding regions where the electrodes 5b, the resistor 11a, and the electrode 5a are joined to each other are formed. Next, the electrode 5b-resistor 11a-electrode 5a are cut into pieces from the base region 5c, thereby forming a resistor having a butt structure similar to that shown in FIG. 1, as shown in FIG. 6D.

  Note that the order of processing, the region to be processed, and the like can be changed as appropriate. The size of the part where the resistance material and the electrode material are fitted should be set to the same level, but when the processing to form the joint portion by laser processing or when the joint processing is performed by mechanical fitting such as pressure welding Thus, the dimensions may be designed so that the latter is more tightly fitted than the former.

  According to the above manufacturing process, a large number of resistors having a butt structure can be manufactured by a simple process. Since mass production is possible, manufacturing costs can be reduced. Further, since the resistor is cut in a state where the resistor and the electrode material are fixed, a resistor with good dimensional accuracy can be manufactured.

  In the structure of FIG. 6B, the region 11b can be removed in advance. In the case of the structure as shown in FIG. 3, press working or the like may be performed from the state of FIG. 6C or FIG.

FIG. 6E is a perspective view showing an example of the structure on the side removed in the step shown in FIG. 6C. Also in this structure, the base region 5d is formed. A plurality of protruding regions Lf each including an electrode 5a, a resistor 11a having a desired thickness, and an electrode 5b and connected by a base region 5d are formed (FIG. 6E (a)). In this structure, by selectively removing the electrode portion on the resistor material (see L101), a resistor in which the height of the resistor 11 is lower by Δh ₁ than the electrodes 5a and 5b is manufactured. (FIG. 6E (b): VIb-VIb cross section of FIG. 6E (a)). For example, when the electrode portion on the resistance material is removed, a part of the electrodes 5a and 5b is also removed. ), The electrodes 5a ′ and 5b ′ can be left, so that a resistor having a butt structure in which the end surfaces of the electrodes 5a and 5b are brought into contact with both end surfaces 11a ′ and 11b ′ of the resistance material 11 is produced. Therefore, the resistance material can be used without waste. Note that only the resistance material portion overlapping the resistance material 11 may be removed by cutting or the like. In this case, a resistor having a structure in which the electrodes 5a and 5b are thicker than the resistor 11 can be obtained.

(Second Embodiment)
Next, a method for manufacturing the current detection resistor according to the second embodiment will be described in detail. In the manufacturing method according to the present embodiment, a plurality of resistors having a butt structure can be formed in a matrix. FIG. 7A is a perspective view of an electrode material 5 such as Cu. The electrode material 5 is plate-shaped and has a thickness Δt. An alignment hole may be provided around the periphery. FIG. 7B is a perspective view showing the electrode structure 5y after processing the electrode material 5 of FIG. 7A. The electrode structure 5y forms a band-shaped structure region 31a along a certain first direction by, for example, a method such as pressing, cutting, or laser processing. In addition, the structural region 31a is formed in parallel in a direction orthogonal to the first direction, separated by a certain distance L61.

  In the structure region 31a, for example, when viewed from one surface of the electrode structure 5y, the first structure portions 27a and the second structure portions 27b are alternately arranged in the first direction. The first structure portion 27a is an electrode portion and has a structure in which a rectangular region having a width W11 and a length L11 is left in the electrode material having a thickness Δt1. The second structure portion 27b is a through-hole in a rectangular region of W11 and length L12, and a plurality of second structure portions 27b are arranged in the first direction with the first structure portion 27a interposed therebetween. The region 25a located on the outer periphery of the first structure portion 27a and the electrode structure 5y has a thickness of Δt, and the other regions have a thickness of Δt1 and are thinner than Δt (see FIG. 7B). The first structure portions 27a arranged in a matrix are connected by a thin plate portion (third portion) having a thickness Δt1.

On the other hand, FIG. 7C and FIG. 7D are perspective views of resistance structures 1y such as Cu—Mn, Cu—Ni, and Ni—Cr. FIG. 7C shows one planar side of the resistance structure 1y, and FIG. 7D shows the back side thereof. The resistance structure 1y is obtained by processing a plate-shaped resistance material (not shown) having a thickness Δt by a method such as pressing, cutting, or laser processing. The resistance structure 1y is a structure in which structural regions 51a along a certain first direction are formed in parallel. The structural regions 51a are formed apart by a distance L61 in a direction orthogonal to the first direction, and the structural regions 51a are connected by a connecting portion (region) 31y.
Finally, when combined with the electrode material 5, it is processed by a method such as pressing, cutting, or laser processing so that the combination is successful.

  In the structure region 51a, the third structure portion 41a and the fourth structure portion 41b are alternately arranged. The fourth structure portion 41b is a through hole through which a rectangular region having a width of W11 and a length of L11 is penetrated. The third structure portion 41a (first portion) is sandwiched between the fourth structure portions 41b and has a width W11, a length L12, and a thickness Δt. The region 31y (second portion) other than the third structure portion 41a is formed to have a thickness Δt−Δt1. The third structure portion 41a (first portion) is formed in a matrix in the resistor structure 1y. The region 31y (second portion) is formed in a line shape or a matrix shape in the resistance structure 1y.

  As described above, after forming the intermediate structures for the electrode material 5 and the resistance material 1x, as shown in FIG. 7E, the first intermediate structure in FIG. 7B and the second intermediate structure in FIG. 7C (FIG. 7D). Combine with the intermediate structure. That is, the first structure portion 27a and the fourth structure portion 41b, and the third structure portion 41a (FIG. 7D) and the second structure portion 27b are arranged so as to fit, and in fact, the fit is performed. Do. Since the widths and lengths of the structures to be fitted are substantially the same, they can be fitted and fitted. FIG. 7E shows a disassembled state before assembly, and FIG. 7F shows an inset state. It can be seen from FIG. 7F that the first structure portion 27a is exposed from the fourth structure portion 41b which is a through hole. FIG. 7G shows the back side of FIG. 7F. It can be seen from FIG. 7G that the third structure portion 41a is exposed from the second structure portion 27b which is a through hole. With this structure, it is possible to prevent misalignment or the like in the fitting structure between the electrode structure 5y and the resistor structure 1y, and it is possible to maintain a stable fitting structure even before welding. The electrode material and the resistance material are welded by a laser beam, an electron beam, or the like as indicated by L53 and L54. Further, pressure may be applied to the structure from the vertical direction (thickness direction) or the like, and the structure may be joined by rolling or the like. In particular, good bonding is performed on the contact surface between the third structure portion 41a and the first structure portion 27a.

  Next, as shown in FIG. 7H, a predetermined punching area AR1 (width W11 or less, length L21) including the first structure portion 27a on both sides of the third structure portion 41a as a center is cut out by laser processing or the like. A plurality of resistors having a butt structure in which the electrodes 5a and 5b are disposed on both end faces of the resistor can be produced by punching out by punching or the like. The cutting method may be other methods.

  In the above-described embodiment, an example in which the structures are aligned and arranged in a line shape or a matrix shape is shown, but an arrangement different from that may be used. Further, it is preferable that the interval of the arrangement of the parts is made closer and the useless parts are reduced as much as possible.

In the above-described embodiment, the configuration and the like illustrated in the accompanying drawings are not limited to these, and can be appropriately changed within a range in which the effect of the present invention is exhibited. In addition, various modifications can be made without departing from the scope of the object of the present invention.
Each component of the present invention can be arbitrarily selected, and an invention having a selected configuration is also included in the present invention.

  The present invention can be used as a method for manufacturing a resistor.

DESCRIPTION OF SYMBOLS 1 ... Resistor, 1a, 1b ... Both end surfaces, 5a, 5b ... Electrode, 7a ... 1st structure part (3rd part: Connection part), 7b ... 2nd structure part (through-hole), 11b ... 3rd Structure part (second part), 11a... Fourth structure part (first part).

Claims (7)

Preparing a hoop-shaped or plate-shaped resistance material made of a resistance material, and a hoop-shaped or plate-shaped electrode material having a higher conductivity than the resistance material;
Forming a plurality of thick first portions and a second portion having a thickness smaller than the first portion on the resistance material;
Forming a plurality of through holes in the electrode material, fitting the first portion and the through hole, and joining the resistance material and the electrode material;
By punching or cutting so that the electrode material is disposed at both ends of the first portion, a current detecting resistor is formed by abutting and joining the end surface of the first portion and the end surface of the electrode material. A method for manufacturing a resistor for current detection, comprising: a step.   The method for manufacturing a resistor for current detection according to claim 1, further comprising forming a third portion shallower than the depth of the through hole in the electrode material.   The method for manufacturing a current detection resistor according to claim 2, wherein the second portion and the third portion are fitted together when the resistance material and the electrode material are joined.   The method for manufacturing a current detecting resistor according to any one of claims 1 to 3, wherein the first portion and the second portion are formed in a line shape or a matrix shape. A first structure obtained by processing a hoop-shaped or plate-shaped resistance material made of a resistance material,
A first structure in which a plurality of first portions having a large thickness and a second portion having a thickness smaller than that of the first portion are alternately arranged. A second structure obtained by processing a hoop-shaped or plate-shaped electrode material made of an electrode material,
A second structure in which a plurality of thin first portions and through holes are alternately arranged. A first structure obtained by processing a hoop-shaped or plate-shaped resistance material made of a resistance material,
A first structure in which a plurality of first portions having a large thickness and a second portion having a thickness smaller than the first portion are alternately arranged;
A second structure obtained by processing a hoop-shaped or plate-shaped electrode material made of an electrode material,
A structure in which a plurality of thin first portions and second structures in which through holes are alternately arranged are fitted together.

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