JP6372973B2 - Method for sealing optical semiconductor element - Google Patents

Description

  The present invention relates to a method for sealing an optical semiconductor element. More specifically, the present invention relates to a method for sealing an optical semiconductor device having an optical semiconductor chip with a photocurable silicone resin.

  Today, silicone resins having excellent properties such as transparency, heat resistance, light resistance, and weather resistance are widely used as sealing materials for protecting optical semiconductor chips (semiconductor chips having a light emitting or light receiving function). . Among these, addition-curable silicone resins composed of alkenyl group-containing polyorganosiloxane and hydrosilyl group-containing polyorganosiloxane are particularly suitable for use in high-power light-emitting devices because they exhibit high heat resistance and light resistance. .

  However, in order to cure the addition-curable silicone resin, heating at 100 ° C. to 200 ° C. is generally required. Therefore, during heating, the shape of the silicone resin flows and the filler settles down due to a decrease in resin viscosity. Etc. is a problem.

  In order to solve the above problems, addition-curable polyorganosiloxane compositions that are cured by ultraviolet light have been proposed (Patent Documents 1 and 2). This is because, by irradiating the composition with ultraviolet light, an addition reaction of an alkenyl group and a hydrosilyl group proceeds at room temperature, and a silicone gel in which a part of the alkenyl group and the hydrosilyl group reacts can be obtained. is there. Patent Document 3 describes a method of using a photocurable addition-type polyorganosiloxane as an LED sealing material.

  However, the method of curing the addition-curable polyorganosiloxane as described above with light is not yet satisfactory. In particular, when the resin is temporarily cured by light and then completely cured by heating, the deep curability of the silicone resin often becomes a problem. That is, when the deep part curability is poor, a large difference occurs in the degree of curing between the resin surface and the deep part, and as a result, the cured product surface is wavy in the subsequent heating step.

  In addition, the optical semiconductor device is provided with a reflective material for condensing light emitted from the semiconductor element on the upper surface of the device, and a cured product of a silicone resin composition containing titanium oxide or alumina may be used. Are known. However, these reflectors hardly contributed to the improvement of the deep curing property of the sealing resin because the reflectance in the ultraviolet light region effective for curing the photocurable organopolysiloxane that seals the element is low. .

JP 2003-213132 A JP2012-121960 Special table 2008-521252

  The present invention has been made in view of the above circumstances, and provides an optical semiconductor element sealing method capable of improving the deep curability of a resin in a process of sealing an optical semiconductor element with a photocurable polyorganosiloxane. The purpose is that.

  As a result of intensive studies to solve the above-mentioned problems, the inventors of the present invention applied light to the substrate surface of the optical semiconductor device that is in contact with the lower portion of the injected polyorganosiloxane when the photocurable polyorganosiloxane is cured by light. It has been found that the deep part curability of the polyorganosiloxane is improved by providing a reflective metal part, and the present invention has been achieved.

  That is, the present invention is a method for sealing an optical semiconductor element, wherein a photocurable polyorganosiloxane is injected onto a substrate on which a metal part capable of reflecting light is exposed, and is irradiated with light. An optical semiconductor element sealing method and an optical semiconductor device manufacturing method including the sealing method are provided.

  According to the sealing method of the present invention, the deep curability of the polyorganosiloxane is improved.

It is a figure which shows the semiconductor element obtained by this invention. It is a figure which shows a flip chip type optical semiconductor device. In this invention, it is a figure which shows the board | substrate with which the metal part which can reflect light was exposed. It is a figure which shows the semiconductor element obtained by this invention.

Hereinafter, the present invention will be described in detail.

  The present invention is a method for encapsulating an optical semiconductor element, wherein in the step of encapsulating the optical semiconductor element with a photocurable polyorganosiloxane, a substrate having an exposed metal part capable of reflecting light is used. Features.

  Taking the wire bonding type optical semiconductor device of FIG. 1 as an example, the optical semiconductor chip 1 is bonded to the metal wiring 2 existing on the surface of the substrate in the hole surrounded by the dam material, and the current-carrying metal portion 3 and light The semiconductor chip 1 is connected by a metal wire 4, and a photocurable silicone resin 7 is injected into the void surrounded by the dam material 6. The feature of the present invention is that the metal layer is exposed for light reflection. Hereinafter, each member will be described in detail.

[Optical semiconductor chip and metal wiring]
The optical semiconductor chip is not particularly limited as long as it has a function of receiving or emitting light, and a commercially available one can be used. The optical semiconductor chip is bonded to a metal wiring provided on the substrate so that electricity is conducted. The material of the metal wiring is not particularly limited as long as it conducts electricity, but it is desirable to use gold, silver, or copper from the viewpoint of electrical conductivity.

[Metal parts for energization and metal wires]
The energizing metal portion is electrically insulated from the metal wiring to which the optical semiconductor is bonded, and the optical semiconductor and the energizing metal portion are connected to each other by the metal wire. The materials for the energizing metal and the metal wire are the same as those for the metal wiring. Further, the flip-chip type optical semiconductor device as shown in FIG. 2 does not require a metal wire.

[Exposed metal for light reflection]
The light reflecting metal exposed portion (the portion where the metal portion capable of reflecting light is exposed), which is a feature of the present invention, will be described. The metal of the light reflecting metal exposed portion is not particularly limited as long as it is a metal that reflects light. Suitable examples of such metals include metals such as gold, silver, copper, platinum, aluminum, rhodium, chromium, nickel, iron, and alloys thereof, and more preferable metals are high in the ultraviolet region. Examples thereof include silver, aluminum, and rhodium having reflectivity. The light reflecting metal exposed portion must be arranged so that the metal wiring to which the optical semiconductor is bonded and the conducting metal portion are not electrically connected. The exposed area of the light-exposed metal exposed portion is preferably 5 to 100%, more preferably 20 to 100%, based on the total area exposed on the substrate (excluding the area of the die bond material and the chip) (FIG. 4). reference). If it is this range, the deep-part curability of a photocurable silicone resin will become favorable.

[Dam material]
Both the material and shape of the dam material are not particularly limited as long as it has a function of maintaining the shape of the injected silicone resin. In addition, when the silicone resin can be kept alone in an uncured state, for example, when the silicone resin has high thixotropy or when the silicone resin is solid, the dam material may be omitted.

[Silicone resin sealing layer]
Examples of the photocurable polyorganosiloxane used for the silicone resin sealing layer include (A) a polyorganosiloxane containing at least two alkenyl groups in the molecule and (B) at least two hydrosilyl groups in the molecule. A polyorganosiloxane composition containing the polyorganosiloxane contained above and (C) a photoactive platinum-based catalyst, and optionally containing other components, is preferred. Hereinafter, each component will be described.

(A) Polyorganosiloxane containing at least two alkenyl groups in the molecule As component (A), the following general formula (1)
(R ¹ ₃ SiO _1/2 ) _l (R ¹ ₂ SiO _2/2 ) _m (R ¹ SiO _3/2 ) _n (SiO _4/2 ) _o (1)
(R ¹ is, independently of each other, a hydrogen atom or a monovalent hydrocarbon group having 1 to 18 carbon atoms which may contain an oxygen atom, a halogen atom, a nitrogen atom or a sulfur atom, and l is an integer of 0 to 10,000. M is an integer of 0 to 10000, n is an integer of 0 to 10000, and o is an integer of 0 to 10000), and at least two of R ¹ in one molecule are Polyorganosiloxanes that are alkenyl groups are preferred.

(B) Polyorganosiloxane containing at least two hydrosilyl groups in the molecule The component (B) is represented by the above general formula (1), and at least two of R ¹ are hydrosilyl groups in one molecule. Polyorganosiloxane is preferred. The amount of the component (B) is preferably such that the hydrosilyl group is 0.1 to 4.0 equivalents, more preferably 0.5 to 2.1, with respect to 1 equivalent of the alkenyl group of the component (A). The amount is in the range of 0. Within this range, a sufficiently cured silicone resin sealing layer can be obtained.

(C) Photoactive metal complex catalyst Component (C) is not particularly limited as long as it is a metal complex having the ability to initiate the hydrosilylation reaction of component (A) and component (B) with light. Usually include complexes of noble metals such as, for example, platinum, rhodium, iridium, cobalt, nickel, and palladium. In particular, the noble metal-containing catalyst preferably contains platinum. Two or more metal complex catalysts may be used simultaneously. Examples of preferred platinum complexes include β-diketonate platinum complexes, (η5-cyclopentadienyl) tri (σ-aliphatic) platinum complexes, and C 7-20-aromatic substituted (η5-cyclopentadienyl) trines. (Σ-aliphatic) platinum complex and the like.
Component (C) may be added in an amount sufficient to promote the hydrosilylation reaction, and is preferably 0.00001 to 1 part by weight, more preferably 100 parts by weight of polyorganosiloxane composition. It is 0.0001-0.1 mass part, More preferably, it is 0.0005-0.05 mass part.

Arbitrary component (D) Phosphor The phosphor of component (D) may be any phosphor as long as it is a known phosphor, and the blending amount thereof is the heat constituting the phosphor-containing thermosetting silicone resin layer. 0.1-2000 mass parts is preferable normally with respect to a total of 100 mass parts of (A)-(C) component of a curable silicone resin composition, 0.1-300 mass parts is more preferable, 10-300 A range is further preferred. The average particle diameter of the phosphor of component (D) can be determined as a mass average value D ₅₀ (or median diameter) in particle size distribution measurement by laser light diffraction. In general, the average particle diameter may be 10 nm or more, preferably 10 nm to 10 μm, more preferably about 10 nm to 1 μm.

  The fluorescent material may be any material as long as it absorbs light from a semiconductor light emitting diode having a nitride semiconductor as a light emitting layer and converts the light to light of a different wavelength. Examples of the fluorescent material include nitride-based phosphors and oxynitride-based phosphors mainly activated by lanthanoid-based elements such as Eu and Ce, lanthanoid-based phosphors such as Eu, and transition metal-based elements such as Mn. Mainly activated alkaline earth metal halogen apatite phosphor, alkaline earth metal borate phosphor, alkaline earth metal aluminate phosphor, alkaline earth metal silicate phosphor, alkaline earth metal sulfide Phosphors, alkaline earth metal thiogallate phosphors, alkaline earth metal silicon nitride phosphors, germanate phosphors, rare earth aluminate phosphors mainly activated with lanthanoid elements such as Ce, rare earth silicate phosphors And organic and organic complex phosphors mainly activated with lanthanoid elements such as Eu or Eu, Ca—Al—Si—O—N oxynitride glass phosphors, etc. , It is preferable to use at least one or more selected from these phosphors.

  As specific examples, the following phosphors can be used, but are not limited thereto. In the following, M is at least one element selected from Sr, Ca, Ba, Mg, and Zn, X is at least one element selected from F, Cl, Br, and I, and R is Eu, Mn, or Any combination of Eu and Mn.

Examples of nitride phosphors mainly activated by lanthanoid elements such as Eu and Ce include M ₂ Si ₅ N ₈ : Eu. In addition to M ₂ Si ₅ N ₈ : Eu, there are MSi ₇ N ₁₀ : Eu, M _1.8 Si ₅ O _0.2 N ₈ : Eu, M _0.9 Si ₇ O _0.1 N ₁₀ : Eu, and the like.

An oxynitride phosphor mainly activated by a lanthanoid element such as Eu or Ce includes MSi ₂ O ₂ N ₂ : Eu.

Examples of the alkaline earth metal halogen apatite phosphor mainly activated by a lanthanoid element such as Eu or a transition metal element such as Mn include M ₅ (PO ₄ ) ₃ X: R.

As the alkaline earth metal borate phosphor, M ₂ B ₅ O ₉ X: R (M is at least one selected from Sr, Ca, Ba, Mg, Zn. X is F, Cl, And at least one selected from Br and I. R is Eu, Mn, or any one of Eu and Mn.).

Alkaline earth metal aluminate phosphors include SrAl ₂ O ₄ : R, Sr ₄ Al ₁₄ O ₂₅ : R, CaAl ₂ O ₄ : R, BaMg ₂ Al ₁₆ O ₂₇ : R, BaMg ₂ Al ₁₆ O ₁₂ : R, BaMgAl ₁₀ O ₁₇ : R (wherein R is one or more of Eu, Mn, Eu and Mn).

Examples of the alkaline earth metal sulfide phosphor include La ₂ O ₂ S: Eu, Y ₂ O ₂ S: Eu, and Gd ₂ O ₂ S: Eu.

As rare earth aluminate phosphors mainly activated by lanthanoid elements such as Ce, Y ₃ Al ₅ O ₁₂ : Ce, (Y _0.8 Gd _0.2 ) ₃ Al ₅ O ₁₂ : Ce, Y ₃ (Al _0.8 Ga) _0.2 ) ₅ O ₁₂ : Ce, (Y, Gd) ₃ (Al, Ga) ₅ O _{12 and} other YAG phosphors represented by the composition formula. Further, there are Tb ₃ Al ₅ O ₁₂ : Ce, Lu ₃ Al ₅ O ₁₂ : Ce, etc., in which a part or all of Y is substituted with Tb, Lu or the like.

Other phosphors include ZnS: Eu, Zn ₂ GeO ₄ : Mn, MGa ₂ S ₄ : Eu, and the like.

  The phosphor described above contains at least one selected from Tb, Cu, Ag, Au, Cr, Nd, Dy, Co, Ni, and Ti instead of Eu or in addition to Eu as desired. You can also.

The Ca—Al—Si—O—N-based oxynitride glass phosphor is expressed in terms of mol%, CaCO ₃ is converted to CaO, 20 to 50 mol%, Al ₂ O ₃ is 0 to 30 mol%, SiO 2 25 to 60 mol%, AlN 5 to 50 mol%, rare earth oxide or transition metal oxide 0.1 to 20 mol%, and oxynitride glass having a total of 5 components of 100 mol% as a base material This is a phosphor. In the phosphor using oxynitride glass as a base material, the nitrogen content is preferably 15% by mass or less. In addition to the rare earth oxide ion, another rare earth element ion serving as a sensitizer is added to the rare earth oxide. It is preferable to contain as a co-activator in content in the range of 0.1-10 mol% in fluorescent glass.

  Moreover, it is fluorescent substance other than the said fluorescent substance, Comprising: The fluorescent substance which has the same performance and effect can also be used for this invention.

"Other ingredients"
In addition to the above components, the silicone resin sealing layer may contain a photosensitizer, an adhesion aid, a reaction inhibitor, a filler such as a pigment, a solvent, and the like. These components may be known ones or commercially available ones may be used.

  The silicone resin sealing layer in the present invention is cured by light irradiation.

  The wavelength of light irradiated for curing the photocurable polyorganosiloxane is not particularly limited as long as it has a wavelength range that can activate the component (C). When using the platinum complex mentioned as an example of an active type metal complex catalyst, the light which has the maximum peak in the wavelength range of 200-700 nm is preferable, and the light which has the maximum peak in the wavelength range of 300-400 nm is more preferable. Examples of light sources having these wavelengths include tungsten halogen lamps, xenon arc lamps, mercury arc lamps, incandescent lamps, sterilizing lamps, fluorescent lamps, LED lamps, and the like. Moreover, you may cut other wavelengths using a band pass filter etc. so that the maximum peak of a wavelength may turn into a desired wavelength. In particular, as described in JP 2012-121960 A, the emission peak has a maximum peak wavelength in the region of 300 nm to 400 nm, and the irradiance of each wavelength in the wavelength region shorter than 300 nm of the light is the maximum peak. It is particularly preferable to use light that is 5% or less of the wavelength irradiance because it can be cured in a short time.

  It is preferable that the amount of light irradiation is sufficient for the photocurable polyorganosiloxane composition to be in a gel state and lose fluidity. Specifically, it is preferred that at least 5 mol% of the alkenyl group of component (A) is consumed by the hydrosilylation reaction, more preferably at least 20 mol% is consumed by the hydrosilylation reaction.

  In order to accelerate the curing of the photocurable polyorganosiloxane composition, it is preferable to heat at the same time as the light irradiation. However, the heating temperature is preferably 150 ° C. or lower, more preferably 100 ° C. or lower, and more preferably 70 ° C. or lower to prevent changes in shape due to flow of the polyorganosiloxane composition due to heating and sedimentation of filler due to a decrease in resin viscosity. preferable. Further, the lower limit of the heating temperature is preferably 40 ° C, particularly preferably 60 ° C.

  In order to completely cure the polyorganosiloxane composition, it is preferable to heat after curing by light irradiation. The heating temperature and the heating time are not particularly limited as long as the hydrosilylation reaction proceeds sufficiently, and it is usually preferably 80 to 200 ° C. and 1 to 24 hours. In addition, this heat curing may be performed in multiple stages for the purpose of stress relaxation of the resin. Specific examples of heating conditions include heating at 60 ° C. for 1 hour and then heating at 150 ° C. for 4 hours.

  EXAMPLES Hereinafter, although an Example is shown and this invention is demonstrated in detail, this invention is not restrict | limited to the following Example.

[Example 1]
As shown in FIG. 2, a thermosetting white silicone resin (LPS-2428TW, manufactured by Shin-Etsu Chemical Co., Ltd.) is used as a dam material on a mirror-finished aluminum plate (365 nm light reflectance = 92%). It apply | coated with the automatic dispensing apparatus (SHOTMASTER300, the product made by Musashi Engineering) so that it might become a circle of 30 mm and height 2mm. As a result, the volume of the portion surrounded by the dam material was 1413 mm ³ . Next, a small amount of thermosetting die bond material (LPS-8445WTF, manufactured by Shin-Etsu Chemical Co., Ltd.) was applied to the center of the circle, and one optical semiconductor chip (3 × 3 × 3 mm ³ ) was placed thereon. By heating at 150 ° C. for 4 hours to cure the dam material and die bond material, the area within the circle surrounded by the dam material excluding the die bond material and chip area (total area exposed on the substrate) A test substrate in which the area of the light reflection metal exposed portion was 100% was produced. A photo-curing silicone resin sealing material (LPS-2429UV, manufactured by Shin-Etsu Chemical Co., Ltd.) is injected into this circle, and the upper surface is covered with a 365 nm band-pass filter, followed by a belt conveyor type ultraviolet light irradiation device (mercury lamp). , And an output of 840 mW / cm ² ) was irradiated with 10,000 mJ / cm ² of ultraviolet light.

[Example 2]
Instead of aluminum substrate, copper plate with silver plating on the surface [light reflectivity of 365 nm = 90%, area in circle surrounded by dam material excluding die bond agent and chip area (exposed on substrate) Sealing was performed in the same manner as in Example 1 except that the area of the exposed metal portion for light reflection was 100%.

[Example 3]
Instead of an aluminum substrate, a copper plate with gold plating on the surface (light reflectivity at 365 nm = 44%, area in a circle surrounded by a dam material excluding die bond agent and chip area (all exposed on the substrate) Sealing was performed in the same manner as in Example 1 except that the area of the exposed metal portion for light reflection was 100%).

[Example 4]
Instead of the aluminum substrate, as shown in FIG. 3, part 3 × 3 mm 4 points subjected black epoxy substrate gold plating of ² (die bonding agent and in a circle surrounded by a dam member excluding the area of the chip substrate surface Sealing was performed in the same manner as in Example 1 except that the area of the exposed metal portion for light reflection was 5% of the total area exposed on the substrate.

[Example 5]
Instead of the aluminum substrate, as shown in FIG. 3, in a circle surrounded by a dam member part gilding of 6 × 6 mm ² excluding the area of the four locations subjected black epoxy substrate (die bonding agent and the chip substrate surface Sealing was performed in the same manner as in Example 1 except that the area of the exposed metal portion for light reflection was 20% of the total area exposed on the substrate.

[Example 6]
Instead of the aluminum substrate, as shown in FIG. 3, in a circle surrounded by a part 9 × 9 mm ² in four locations subjected black epoxy substrate with gold (die bonding agent and dam member excluding the area of the chip substrate surface The sealing was performed in the same manner as in Example 1 except that the area of the exposed metal for light reflection was 45% of the total area exposed on the substrate.

[Example 7]
Instead of an aluminum substrate, a black epoxy substrate (circle surrounded by a dam material excluding die bond agent and chip area) with 4 parts of 6 × 6 mm ² silver plating applied to a part of the upper surface of the substrate as shown in FIG. Sealing was performed in the same manner as in Example 1 except that the inside area (total area exposed on the substrate) was 20%.

[Example 8]
An optical semiconductor chip (3 × 3 × 3 mm ³ ) is mounted on a LED package (TGR-2217ST, manufactured by Shin-Etsu Chemical Co., Ltd.) using a thermosetting die bond agent (LPS-8445WTF, manufactured by Shin-Etsu Chemical Co., Ltd.) The die bond material is cured at 150 ° C. for 4 hours, and the exposed area of the surface silver-plated copper is within the area surrounded by the dam material (the total area exposed on the substrate), excluding the area of the die bond agent and the chip. A test package of about 70% was made. Next, a photo-curable silicone resin sealing material (LPS-2429UV, manufactured by Shin-Etsu Chemical Co., Ltd.) was injected into this test package, and the upper surface was covered with a 365 nm bandpass filter, and then a belt conveyor type ultraviolet light irradiation device. (Mercury lamp, output 840 mW / cm ² ) was used to irradiate ultraviolet light of 10,000 mJ / cm ² .

[Comparative Example 1]
Instead of an aluminum substrate, a white epoxy substrate containing 50% by mass of titanium oxide powder (light reflectance of 365 nm = 12%, area in a circle surrounded by a dam material excluding die bond agent and chip area (on the substrate) Sealing was performed in the same manner as in Example 1 except that the area of the exposed metal portion for light reflection was 0% of the total exposed area).

[Comparative Example 2]
Instead of an aluminum substrate, a white epoxy substrate containing 45% by mass of alumina powder and 5% by mass of titanium oxide powder (365 nm light reflectance = 21%, circle surrounded by dam material excluding die bond agent and chip area) Sealing was performed in the same manner as in Example 1 except that the inside area (total area exposed on the substrate) was 0%.

Evaluation In the examples and comparative examples, the degree of curing of the upper surface of the silicone resin sealing layer after irradiation with ultraviolet light was judged by palpating. A product having no tackiness and good curing was judged as “◯”, a product having tackiness remaining in a semi-cured state as “Δ”, and a liquid state and uncured as “x”. Further, after carefully peeling the silicone resin sealing layer from the substrate, the surface tackiness of the silicone resin sealing layer on the substrate side was also confirmed.

1: Optical semiconductor chip 2: Metal wiring 3: Metal part for energization 4: Metal wire 5: Metal exposed part for light reflection 6: Dam material 7: Silicone resin sealing layer 8: Dam excluding die bond material and chip area Part 9: Substrate exposed portion 10: Substrate 11: Sealing material

Claims (9)

A method for encapsulating an optical semiconductor element, wherein a photocurable polyorganosiloxane is injected onto a flat substrate on which a metal part capable of reflecting light is exposed, from the upper surface side of the photocurable polyorganosiloxane. A method for sealing an optical semiconductor element to be irradiated with light, wherein an area of a metal part capable of reflecting the exposed light on the upper surface of the substrate is 20 to 100% of the exposed substrate area. A method for sealing an optical semiconductor element. 2. The sealing of an optical semiconductor element according to claim 1, wherein the area of the metal part capable of reflecting the exposed light on the upper surface of the substrate is 45 to 100% of the exposed substrate area. Method. Photocurable polyorganosiloxane is
(A) a polyorganosiloxane containing at least two alkenyl groups in the molecule, (B) a polyorganosiloxane containing at least two hydrosilyl groups in the molecule, and (C) a photoactive metal complex catalyst, The method for sealing an optical semiconductor element according to claim 1, wherein the composition is a polyorganosiloxane composition comprising (A) A polyorganosiloxane containing at least two alkenyl groups in the molecule is represented by the following general formula (1):
(R ¹ ₃ SiO _1/2 ) _l (R ¹ ₂ SiO _2/2 ) _m (R ¹ SiO _3/2 ) _n (SiO _4/2 ) _o (1)
(R ¹ is, independently of each other, a hydrogen atom or a monovalent hydrocarbon group having 1 to 18 carbon atoms which may contain an oxygen atom, a halogen atom, a nitrogen atom or a sulfur atom, and l is an integer of 0 to 10,000. in and, m is a number from 0 to 10,000, n is the number of 0 to 10,000, o is represented by a number of 0 to 10,000.), at least two or more of R ¹ within the molecule A polyorganosiloxane which is an alkenyl group,
(B) A polyorganosiloxane containing at least two hydrosilyl groups in the molecule is represented by the general formula (1), and at least two R ¹ in one molecule are hydrosilyl groups, 4. The method for sealing an optical semiconductor element according to claim 3, wherein the hydrosilyl group is a polyorganosiloxane having 0.1 to 4.0 equivalents of an alkenyl group equivalent to 1 component. (C) The method for sealing an optical semiconductor element according to claim 3 , wherein the photoactive metal complex catalyst is a β-diketonate platinum complex catalyst. Wavelength of light irradiated for curing the light curable polyorganosiloxane is, according to any one of claims 1 to 5, characterized in that it has a maximum peak wavelength in the region of 300~400nm in the emission spectrum Sealing method of optical semiconductor element. Light curable polyorganosiloxane light irradiation simultaneously and / or thereafter, sealing method for an optical semiconductor device according to any one of claims 1 to 6, characterized in that heating.   The photocurable polyorganosiloxane contains one or more kinds of phosphors (D), and the content thereof is 0.1 to 2000 parts by mass in total with respect to 100 parts by mass of the photocurable polyorganosiloxane. The method for sealing a semiconductor element according to claim 1. The manufacturing method of the optical semiconductor device containing the sealing method of the semiconductor element of any one of Claims 1-8.