JP6370084B2 - Substrate processing equipment - Google Patents

Description

  The present invention relates to a substrate processing apparatus.

  In recent years, a substrate processing apparatus has been used to perform various processes on a substrate such as a semiconductor wafer. As an example of the substrate processing apparatus, there is a CMP (Chemical Mechanical Polishing) apparatus for polishing a substrate.

  The CMP apparatus is a polishing unit for performing a polishing process on a substrate, a cleaning unit for performing a cleaning process and a drying process on a substrate, a substrate that is transferred to the polishing unit and receives a substrate that has been cleaned and dried by the cleaning unit. Equipped with a load / unload unit. In addition, the CMP apparatus includes a polishing unit, a cleaning unit, and a transfer unit that transfers the substrate in the load / unload unit. The CMP apparatus sequentially performs various processes of polishing, cleaning, and drying while transporting the substrate by the transport unit.

  By the way, when a plurality of substrates are continuously transported in the CMP apparatus, the substrate may be in a standby state due to waiting for processing of the preceding substrate or waiting for a processing unit shared with a substrate transported by a different route. For example, if a standby state of the substrate occurs between the start of the polishing process and the end of the cleaning process, the substrate state becomes unstable due to changes over time (such as corrosion) or disturbance (such as dust). There is a fear. In particular, when copper (Cu) is contained in the object to be polished of the substrate, the influence of corrosion increases if the waiting time from the end of polishing to the start of cleaning is long.

  In this regard, in the prior art, it has been proposed to reduce the waiting time of the substrate from the polishing unit to the cleaning unit by predicting the cleaning start time in the cleaning unit.

Japanese Patent No. 5023146

  However, in the conventional technology, in the substrate processing apparatus having a high degree of freedom in the cleaning process and the transfer route in the cleaning unit, it is considered to reduce the waiting state of the substrate after the cleaning process is completed after being put into the CMP apparatus. It has not been.

  That is, in the prior art, the substrate processing apparatus is based on the premise that the substrate subjected to the polishing process by the polishing unit is sequentially cleaned by a plurality of cleaning units of the cleaning unit and then dried and returned to the load / unload unit. It is a thing. Therefore, in the conventional technology, for example, when the cleaning unit has a plurality of cleaning units that can perform cleaning processing in parallel, the transport route of the substrate in the cleaning unit becomes complicated. There is a risk of waiting. Once a standby state of a substrate occurs in the cleaning unit, there is a possibility that the standby state may also occur on subsequent substrates that pass through the place where the substrate is located.

Accordingly, the present invention has an object to reduce the standby state of a substrate from when it is put into the CMP apparatus until the cleaning process is completed in a substrate processing apparatus having a high degree of freedom in the cleaning process and the transfer route in the cleaning unit. And

  One form of the substrate processing apparatus of the present invention is made in view of the above problems, and includes a polishing unit including at least one polishing unit for polishing the substrate, and at least one for cleaning the substrate polished by the polishing unit. A cleaning unit including two cleaning units; a load / unload unit that delivers a substrate to the polishing unit and receives the substrate from the cleaning unit; and a transport unit that includes at least one transport unit that transports the substrate. A substrate processing apparatus comprising: a control unit that controls the timing of loading the substrate into the substrate processing apparatus; the control unit from when the substrate is loaded into the substrate processing apparatus until the cleaning process is completed The polishing unit, the cleaning unit, and the plurality of substrates to be introduced into the substrate processing apparatus so that a standby state does not occur Creating a time table in which processing end time or scheduled processing end time in the transfer unit is associated, and controlling the timing of loading the plurality of substrates into the substrate processing apparatus based on the time table. To do.

  Further, in one embodiment of the substrate processing apparatus, the control unit performs time required for processing in at least one of the polishing unit and the cleaning unit, and transport processing from the polishing unit to the cleaning unit in the transport unit. The timetable can be created based on the past results of the required time.

  In one embodiment of the substrate processing apparatus, when the control unit creates the timetable for the substrate to be newly input to the substrate processing apparatus, the polishing unit for the newly input substrate, the cleaning Tentative arrival time to the transfer unit and the transfer unit, and the processing in the polishing unit, the cleaning unit, and the transfer unit of the temporary arrival time and the substrate previously introduced into the substrate processing apparatus is completed The time or the scheduled process end time is compared, and if there is a temporary arrival time earlier than the process end time or the scheduled process end time in the same or competing processing units, the earlier temporary arrival time and the process end Create the actual arrival time by adding the time or the difference from the scheduled processing end time to the temporary arrival time to the polishing unit, the cleaning unit, and the transport unit, and based on the actual arrival time The time To create a can.

  In one embodiment of the substrate processing apparatus, when there are a plurality of the early provisional arrival times, the control unit has the largest difference between the early provisional arrival time and the processing end time or the scheduled processing end time. Create the actual arrival time by adding the difference between the large temporary arrival time and the processing end time or the scheduled processing end time to the temporary arrival time to the polishing unit, the cleaning unit, and the transport unit. The timetable can be created based on the actual arrival time.

  In one embodiment of the substrate processing apparatus, the control unit may set the temporary arrival time when the same or competing processing units do not have a temporary arrival time earlier than the processing end time or the scheduled processing end time. Based on this, the timetable can be created.

  According to the present invention, in the substrate processing apparatus having a high degree of freedom in the cleaning process and the transfer route in the cleaning unit, it is possible to reduce the standby state of the substrate from when the cleaning process is completed until the cleaning process is completed. it can.

FIG. 1 is a plan view showing the overall configuration of a substrate processing apparatus according to an embodiment of the present invention. FIG. 2 is a diagram illustrating an example of a wafer transfer route from when a wafer is loaded into the CMP apparatus until the cleaning process is completed. FIG. 3 is a diagram illustrating an example of a wafer transfer route from when a wafer is loaded into the CMP apparatus until the cleaning process is completed. FIG. 4 is a flowchart showing the operation of the CMP apparatus of this embodiment. FIG. 5 is a schematic diagram for explaining a timetable creation process. FIG. 6 is a diagram illustrating an example of a time table. FIG. 7 is a diagram illustrating an example of a graphed time table.

  Hereinafter, a substrate processing apparatus according to an embodiment of the present invention will be described with reference to the drawings. Hereinafter, a CMP apparatus will be described as an example of a substrate processing apparatus, but the present invention is not limited to this. Hereinafter, a substrate processing apparatus including the load / unload unit 2, the polishing unit 3, and the cleaning unit 4 will be described, but the present invention is not limited to this.

  First, the configuration of the CMP apparatus will be described, and then the reduction of the standby state of the substrate will be described.

<Substrate processing equipment>
FIG. 1 is a plan view showing the overall configuration of a substrate processing apparatus according to an embodiment of the present invention. As shown in FIG. 1, the CMP apparatus includes a substantially rectangular housing 1, and the inside of the housing 1 is divided into a load / unload unit 2, a polishing unit 3, and a cleaning unit 4 by partition walls 1a and 1b. Has been. The load / unload unit 2, the polishing unit 3, and the cleaning unit 4 are assembled independently and exhausted independently. Further, the cleaning unit 4 includes a control unit 5 that controls the substrate processing operation. The control unit 5 controls the overall operation of the CMP apparatus. In the present embodiment, the control unit 5 particularly controls the timing of loading the substrate into the polishing unit 3. Details of this point will be described later.

<Load / Unload unit>
The load / unload unit 2 includes two or more (four in this embodiment) front load units 20 on which wafer cassettes for stocking a large number of wafers (substrates) are placed. These front load portions 20 are arranged adjacent to the housing 1 and are arranged along the width direction (direction perpendicular to the longitudinal direction) of the substrate processing apparatus. A carrier for storing a wafer, such as an open cassette, a SMIF (Standard Manufacturing Interface) pod, or a FOUP (Front Opening Unified Pod), can be mounted on the front load unit 20. Here, SMIF and FOUP are sealed containers that can maintain an environment independent of the external space by accommodating a wafer cassette inside and covering with a partition wall.

  Further, the load / unload unit 2 includes an ITM (In-line Thickness Monitor) 24 as a measurement unit for measuring the film thickness on the wafer surface. The load / unload unit 2 is provided with a transfer robot (loader, transfer mechanism) 22 that can move along the front load unit 20. The transfer robot 22 can access a wafer cassette mounted on the front load unit 20. Each transfer robot 22 has two hands up and down. The upper hand is used when returning processed wafers to the wafer cassette. The lower hand is used when a wafer before processing is taken out from the wafer cassette. Furthermore, the lower hand of the transfer robot 22 is configured to be able to reverse the wafer by rotating around its axis.

Since the load / unload unit 2 is an area where it is necessary to maintain the cleanest state, the load / unload unit 2 has a higher pressure inside the CMP apparatus, the polishing unit 3 and the cleaning unit 4 than the CMP apparatus. Always maintained. The polishing unit 3 is the most dirty region because slurry is used as the polishing liquid. Therefore, a negative pressure is formed inside the polishing unit 3, and the pressure is maintained lower than the internal pressure of the cleaning unit 4. The load / unload unit 2 is provided with a filter fan unit (not shown) having a clean air filter such as a HEPA filter, a ULPA filter, or a chemical filter. From the filter fan unit, particles, toxic vapor, Clean air from which toxic gases have been removed is constantly blowing out.

<Polishing unit>
The polishing unit 3 is a region where the wafer is polished (flattened), and includes a first polishing unit 3A, a second polishing unit 3B, a third polishing unit 3C, and a fourth polishing unit 3D. The first polishing unit 3A, the second polishing unit 3B, the third polishing unit 3C, and the fourth polishing unit 3D are arranged along the longitudinal direction of the substrate processing apparatus, as shown in FIG.

  The first polishing unit 3A includes a polishing table to which a polishing pad is attached, a top ring for holding the wafer and pressing the wafer against the polishing pad on the polishing table, and polishing liquid and dressing liquid on the polishing pad. A polishing liquid supply nozzle for supplying (for example, pure water), a dresser for dressing the polishing surface of the polishing pad, and a mixed fluid or liquid (for example, pure water) and gas (for example, nitrogen gas) For example, an atomizer that sprays pure water) on the polishing surface. The second polishing unit 3B, the third polishing unit 3C, and the fourth polishing unit 3D also have the same configuration as the first polishing unit 3A.

<Transport unit>
Next, a transfer mechanism (transfer unit) for transferring the wafer will be described. As shown in FIG. 1, the 1st linear transporter 6 is arrange | positioned adjacent to the 1st grinding | polishing part 3A and the 2nd grinding | polishing part 3B. The first linear transporter 6 has four transport positions (first transport position LTP1, second transport position LTP2, and third transport in order from the load / unload unit side) along the direction in which the polishing units 3A and 3B are arranged. This is a mechanism for transferring the wafer between the position LTP3 and the fourth transfer position LTP4.

  Further, the second linear transporter 7 is disposed adjacent to the third polishing unit 3C and the fourth polishing unit 3D. The second linear transporter 7 has three transfer positions along the direction in which the polishing units 3C and 3D are arranged (the fifth transfer position LTP5, the sixth transfer position LTP6, and the seventh transfer position in order from the load / unload unit side). LTP7).

  The wafer is transferred to the polishing units 3A and 3B by the first linear transporter 6. The top ring of the first polishing unit 3A moves between the polishing position and the second transport position LTP2 by the swing operation of the top ring head. Therefore, the transfer of the wafer to the top ring is performed at the second transfer position LTP2. Similarly, the top ring of the second polishing unit 3B moves between the polishing position and the third transfer position LTP3, and the delivery of the wafer to the top ring is performed at the third transfer position LTP3. The top ring of the third polishing unit 3C moves between the polishing position and the sixth transfer position LTP6, and the transfer of the wafer to the top ring is performed at the sixth transfer position LTP6. The top ring of the fourth polishing unit 3D moves between the polishing position and the seventh transfer position LTP7, and the transfer of the wafer to the top ring is performed at the seventh transfer position LTP7.

A lifter 11 for receiving a wafer from the transfer robot 22 is disposed at the first transfer position LTP1. The wafer is transferred from the transfer robot 22 to the first linear transporter 6 through the lifter 11. A shutter (not shown) is provided between the lifter 11 and the transfer robot 22 in the partition wall 1a. When the wafer is transferred, the shutter is opened so that the wafer is transferred from the transfer robot 22 to the lifter 11. It has become. A swing transporter (STP) 12 is disposed between the first linear transporter 6, the second linear transporter 7, and the cleaning unit 4. The swing transporter 12 has a hand that can move between the fourth transfer position TP4 and the fifth transfer position TP5, and transfers the wafer from the first linear transporter 6 to the second linear transporter 7. Is performed by the swing transporter 12. The wafer is transferred to the third polishing unit 3C and / or the fourth polishing unit 3D by the second linear transporter 7. Further, the wafer polished by the polishing unit 3 is conveyed to the cleaning unit 4 via the swing transporter 12. The transfer unit is provided with a temporary wafer table (WS1) 180.

<Washing unit>
The cleaning unit 4 is divided into a first cleaning chamber 190, a first transfer chamber 191, a second cleaning chamber 192, a second transfer chamber 193, and a third cleaning chamber 194. In the first cleaning chamber 190, two cleaning units CL1A and CL1B and a temporary wafer holder WS2 are arranged. In the second cleaning chamber 192, two cleaning parts CL2A and CL2B and a temporary wafer holder WS3 are arranged. In the third cleaning chamber 194, two cleaning parts CL3A and CL3B for cleaning the substrate are arranged. The cleaning parts CL3A and CL3B are isolated from each other. The cleaning units CL1A, CL1B, CL2A, CL2B, CL3A, and CL3B are cleaning machines that clean the wafer using a cleaning liquid.

  In the first transfer chamber 191, transfer robots (transfer mechanisms) RB1U and RB1L are arranged, and in the second transfer chamber 193, a transfer robot RB2 is arranged. The transfer robots RB1U and RB1L operate to transfer wafers between the temporary placement table 180, the cleaning units CL1A and CL1B, the temporary storage table WS2, and the cleaning units CL2A and CL2B. The transfer robot RB2 operates to transfer wafers between the cleaning units CL2A and CL2B, the temporary placement table WS3, and the cleaning units CL3A and CL3B. Since the transfer robot RB2 transfers only the cleaned wafer, it has only one hand. The transfer robot 22 takes out the wafer from the cleaning parts CL3A and CL3B and returns the wafer to the wafer cassette.

<Reduction of substrate standby state>
Next, reduction of the standby state of the substrate between the start of the polishing process and the end of the cleaning process will be described.

  First, the cause of the standby state of the substrate will be described. 2 and 3 are diagrams showing an example of a wafer transfer route from when a wafer is loaded into the CMP apparatus until the cleaning process is completed. 2 and 3, the description of the transfer unit that transfers the wafer between the processing units is simplified.

  As shown in FIGS. 2 and 3, in the present embodiment, since there are two systems of polishing processing and cleaning processing, the degree of freedom of the wafer transfer route is high. Moreover, as shown in FIGS. 2 and 3, a recipe that performs the cleaning process without performing the polishing process is also possible. Further, as shown in FIG. 3, a complicated wafer transfer route is possible, for example, after the cleaning process is completed in the cleaning unit CL2A, the wafer is returned to the cleaning unit CL2B of another system.

  As described above, when the cleaning unit 4 includes a plurality of cleaning units that can perform cleaning processing in parallel, the wafer transfer route in the cleaning unit becomes complicated, and a standby state of the wafer occurs in the cleaning unit. There is a risk. Once a standby state of a wafer occurs in the cleaning unit, the standby state may occur in subsequent wafers that are scheduled to pass through the location where the wafer is located.

  On the other hand, in the present embodiment, the control unit 5 creates a time table so that a standby state does not occur after the wafer is put into the CMP apparatus until the cleaning process is completed. The time table is a table in which processing end times or scheduled processing end times in the polishing unit, the cleaning unit, and the transfer unit are associated with each of a plurality of wafers to be input into the CMP apparatus. The control unit 5 controls the timing of loading a plurality of wafers into the CMP apparatus based on the timetable.

  This point will be described in detail together with the overall operation of the CMP apparatus. FIG. 4 is a flowchart showing the operation of the CMP apparatus of this embodiment. As shown in FIG. 4, the control unit 5 first predicts a transfer route for all wafers to be put into the CMP apparatus based on the recipe (step S101).

  Subsequently, the control unit 5 predicts the operation time for all the wafers to be input into the CMP apparatus (step S102). Specifically, the control unit 5 predicts the operation time for each wafer based on the predicted time set in the recipe or the past actual value. This prediction of the operation time is used when creating a timetable. That is, the control unit 5 is based on the past results of the time required for processing in at least one of the polishing unit and the cleaning unit, and the time required for transfer processing from the polishing unit 3 to the cleaning unit 4 in the transfer unit. Create a timetable.

  Subsequently, the control unit 5 calculates the arrival time of each wafer at each processing unit (polishing unit, transfer unit, and cleaning unit) based on the operation time of each wafer predicted in step S102 (step S103). ). Subsequently, the control unit 5 calculates a standby time in each processing unit of each wafer (step S104).

  This point will be described with reference to the drawings. FIG. 5 is a schematic diagram for explaining a timetable creation process. FIG. 5 shows a process of creating a timetable for the wafer 4 to be newly input to the CMP apparatus, because a timetable has already been created for the wafers 1 to 3.

  As shown in FIG. 5, the timetable 210 includes a polishing unit (Poli.A), a cleaning unit (CL1A, CL2A), and a transfer unit (LTP3, WS1, RB1L, RB1U) for each of the wafers 1 to 3. The process end time or the scheduled process end time is associated. On the other hand, when the control unit 5 creates a timetable for the wafer 4 to be newly input to the CMP apparatus, the control unit 5 determines the temporary arrival times of the wafer 4 to be newly input to the polishing unit, the cleaning unit, and the transfer unit. calculate. The provisional arrival time table 220 correlates the estimated arrival times of the wafer 4 to the polishing unit (Poli.A), the cleaning unit (CL1A, CL2A), and the transfer unit (LTP3, WS1, RB1L, RB1U).

  The control unit 5 includes a provisional arrival time (temporary arrival time table 220) and a processing end time or a processing end scheduled time (time table) in the polishing unit, the cleaning unit, and the transfer unit of the wafer that has been introduced into the CMP apparatus in advance. 210). For example, in this example, the processing end scheduled time (0:04:35) of the wafer 3 in RB1U is compared with the scheduled arrival time (0:04:10) in WS1, which is a processing unit competing with the processing in RB1U. Then, the estimated arrival time at WS1 is 25 seconds earlier. In other words, when the wafer 4 is loaded into the CMP apparatus according to the provisional arrival time table 220, the wafer 4 waits for 25 seconds at WS1. Note that competing processing units are, for example, the operation of the other processing unit (RB1U) in order for one processing unit (WS1) to operate (deliver the wafer for transfer), such as WS1 and RB1U. It is a processing unit having such a relationship as to require (receive wafer from WS1).

As shown in FIG. 4, the control unit 5 determines whether or not there is a waiting time (step S105). If there is a waiting time (step S105, Yes), the processing unit with the longest waiting time is determined. Search is performed (step S106).

  For example, in the example of FIG. 5, a waiting time of 25 seconds occurs between the related processing units of RB1U of wafer 3 and WS1 of wafer 4 as described above. In addition to this, when comparing the scheduled processing time (0:04:30) of the wafer 3 with CL1A and the arrival time (0:04:15) of the wafer 4 with CL1A, the estimated arrival time with CL1A is 15 seconds earlier. A waiting time of 15 seconds occurs.

  In this case, the control unit 5 recognizes that the longest waiting time is 25 seconds, and the processing unit with the longest waiting time is the WS 1 of the wafer 4. In other words, if there are a plurality of early provisional arrival times (for example, 15 seconds and 25 seconds), the control unit 5 has the largest difference between the early provisional arrival time and the process end time or the scheduled process end time. The actual arrival time is created by adding the difference (25 seconds) between the arrival time and the processing end time or scheduled processing end time to the temporary arrival time to the polishing unit, the cleaning unit, and the transport unit.

  Subsequently, as illustrated in FIG. 4, the control unit 5 creates an actual arrival time table 230 by adding the longest waiting time to the provisional arrival time table 220 (step S <b> 107). That is, as shown in FIG. 5, the control unit 5 adds the longest waiting time (25 seconds) to each processing unit of the temporary arrival time table 220. For example, the arrival time of the wafer 4 at the LTP 3 is 0:00 in the provisional arrival time table 220, but is 0:04:25 in the actual arrival time table 230. Further, the arrival time of the wafer 4 at WS1 is 0:04:10 in the temporary arrival time table 220, but 0:04:35 in the actual arrival time table 230.

  As described above, when there is a temporary arrival time earlier than the processing end time or the scheduled processing end time in the same or competing processing units, the control unit 5 determines the earlier temporary arrival time and the processing end time or the scheduled processing end time. The actual arrival time is created by adding the difference to the provisional arrival time to the polishing unit, the cleaning unit, and the transport unit.

  Subsequently, as shown in FIG. 4, the control unit 5 creates a time table based on the actual arrival time (actual arrival time table 230) created in step S107 (step S108). That is, the actual arrival time table 230 associates the arrival times of the wafers 4 with each processing unit. Therefore, the control unit 5 creates a time table in which the processing end time or the scheduled processing end time in each processing unit is associated with the actual arrival time table 230 by adding the processing time in each processing unit.

  On the other hand, if the control unit 5 determines in step S105 that there is no standby time (No in step S105), the control unit 5 does not create the actual arrival time table 230, but based on the temporary arrival time table 220. Is created (step S108). That is, when there is no provisional arrival time earlier than the processing end time or the processing end scheduled time in the same or competing processing units, the control unit 5 creates a time table based on the provisional arrival time.

  FIG. 6 is a diagram illustrating an example of the time table 240. As shown in FIG. 6, the time table 240 shows a start time (Start) of a series of processes, a current wafer position (Pos), a process end time in each processing unit, or a plurality of wafers to be input to the CMP apparatus. It is a table | surface with which process end scheduled time was matched. The time table 240 is a table for preventing a standby state from occurring after the wafer is put into the CMP apparatus until the cleaning process is completed. The timetable 240 is created by executing a series of operations shown in FIG. The control unit 5 controls the timing of loading a plurality of wafers into the CMP apparatus based on the timetable 240.

As described above, according to the present embodiment, for all the wafers to be input into the CMP apparatus, by calculating the transfer time to all the processing units on the transfer path and creating a timetable, the shared processing among the wafers The transfer start timing and the route are controlled so that no waiting for use of the parts occurs and all processes from the start of polishing to the end of cleaning are processed in the shortest time without waiting. Therefore, the standby time of the wafer in the CMP apparatus is reduced. As a result, according to the present embodiment, it is possible to prevent the wafer state from becoming unstable due to changes over time (such as corrosion) or disturbances (such as dust). In particular, when copper (Cu) is contained in the object to be polished on the wafer, the influence of corrosion increases when the waiting time until the start of cleaning after polishing is finished, but the waiting time should be reduced. Thus, corrosion of copper can be prevented.

  Further, the CMP apparatus (control unit 5) of the present embodiment, for example, when a processing unit that cannot process a wafer occurs due to maintenance of a part of the processing unit of the CMP apparatus, the processing unit that performs maintenance or the like You can create a route that bypasses.

  In addition, the CMP apparatus of the present embodiment can update the time table 240 once created as appropriate. For example, the control unit 5 calculates the time difference between the actual arrival time and the predicted arrival time of the wafer to each processing unit, and the timetable 240 for the subsequent wafers (wafers affected by delay) that pass through the processing unit. Can be updated. In addition, the control unit 5 can feed back delay information to a wafer that has been put into the CMP apparatus. If the time difference between the actual arrival time and the predicted arrival time of the wafer is smaller than a threshold (for example, 0.5 seconds), the time difference can be regarded as an error, so that delay information is not fed back. You can also.

  Further, the CMP apparatus (control unit 5) of the present embodiment performs the control transfer by re-creating the timetable 240 when the transfer is resumed when the transfer of the wafer is temporarily stopped due to the failure of the CMP apparatus or the transfer stop function. You can continue. When re-creating the timetable 240, the control unit 5 performs the process from the downstream side of the wafer transfer route. In addition, when a wafer put into the CMP apparatus is removed from the CMP apparatus due to, for example, an abnormality of the wafer, the control unit 5 deletes the wafer from the timetable 240 and removes the wafer from the control table. Can be recreated.

  Further, when the wafer shares the processing unit, the CMP apparatus (control unit 5) of the present embodiment performs calculation and control so that the next wafer is processed after the preceding wafer. If interrupts can be made without change, an interrupt timetable 240 can be created so that subsequent wafers can be processed before the preceding wafers.

  In addition, the CMP apparatus (control unit 5) of the present embodiment once creates the timetable 240 and then re-creates the timetable 240 when the wafer transport route changes significantly due to maintenance of the processing unit or the like. It takes a long time. Therefore, in such a case, the control unit 5 can stop the introduction of a new wafer until the wafer in the CMP apparatus is carried out of the CMP apparatus without re-creating the timetable 240. In addition, when it takes a long time to create or recreate the timetable 240, the timetable 240 creation or recreation function can be switched to invalid.

  Further, the CMP apparatus (control unit 5) of the present embodiment can visualize the transfer states of a plurality of wafers so that an operator or the like can monitor the transfer states of the plurality of wafers. For example, the control unit 5 can display the timetable 240 shown in FIG. 6 on the output interface (monitor, etc.) of the CMP apparatus. Moreover, the control part 5 can graph the timetable 240, and can display it on an output interface in real time.

FIG. 7 is a diagram illustrating an example of the timetable 240 that is graphed. In FIG. 7, the horizontal axis (t) indicates the passage of time. As shown in FIG. 7, the control unit 5 can display the processing units that perform processing on the wafers arranged in time series for each of the plurality of wafers. Moreover, the control part 5 can attach | subject a different color or pattern for every process part. Thereby, the worker or the like can easily confirm that the same or competing processing units are not used at the same time. In addition, when the standby state occurs on the wafer for some reason, the control unit 5 can display the remaining time of the standby state with an indicator or the like.

2 Unload unit 3 Polishing unit 3A-3D Polishing unit 4 Cleaning unit 5 Control unit 210, 240 Time table 220 Temporary arrival time table 230 Actual arrival time table CL1A, CL1B, CL2A, CL2B, CL3A, CL3B Cleaning unit

Claims (4)

A polishing unit including at least one polishing unit for polishing the substrate;
A cleaning unit including at least one cleaning unit for cleaning the substrate polished by the polishing unit;
A load / unload unit that delivers the substrate to the polishing unit and receives the substrate from the cleaning unit;
A substrate processing apparatus comprising: a conveyance unit including at least one conveyance unit that conveys the substrate;
A control unit for controlling the timing of loading the substrate into the substrate processing apparatus;
The control unit includes the polishing unit and the cleaning unit for each of a plurality of substrates that are input to the substrate processing apparatus so that a standby state does not occur after the substrate is input to the substrate processing apparatus until the cleaning process is completed. and create a timetable which associates processing end time or processing end scheduled time in the transport unit, on the basis of the timetable, to control the charged timing to the substrate processing apparatus of said plurality of substrates,
When the control unit creates the timetable for a substrate to be newly input to the substrate processing apparatus, a temporary provision to the polishing unit, the cleaning unit, and the transport unit of the newly input substrate is performed. The arrival time is calculated, and the temporary arrival time is compared with the processing end time or the processing end scheduled time in the polishing unit, the cleaning unit, and the transfer unit of the substrate previously introduced into the substrate processing apparatus. If there is a tentative arrival time earlier than the process end time or the expected process end time in the same or competing processing units, the difference between the earlier provisional arrival time and the process end time or the expected process end time is calculated. The actual arrival time is created by adding to the temporary arrival time to the polishing unit, the cleaning unit, and the transport unit, and the timetable is created based on the actual arrival time.
A substrate processing apparatus. The substrate processing apparatus of claim 1,
The control unit is based on past results of time required for processing in at least one of the polishing unit and the cleaning unit, and time required for transfer processing from the polishing unit to the cleaning unit in the transfer unit. To create the timetable,
A substrate processing apparatus. The substrate processing apparatus of claim 1 ,
The control unit, when there are a plurality of the early provisional arrival times, the provisional arrival time and the processing end time having the largest difference between the early provisional arrival time and the processing end time or scheduled processing end time. Alternatively, an actual arrival time is created by adding the difference from the scheduled processing end time to the temporary arrival time to the polishing unit, the cleaning unit, and the transport unit, and based on the actual arrival time Create timetables,
A substrate processing apparatus. In the substrate processing apparatus according to any one of claims 1 to 3 ,
The control unit creates the timetable based on the temporary arrival time when there is no temporary arrival time earlier than the processing end time or the scheduled processing end time in the same or competing processing units,
A substrate processing apparatus.