JP6365788B1 - Display device and display device substrate - Google Patents

Abstract

  The display device of the present invention includes a display function layer, an array substrate that drives the display function layer, a display device substrate, and a control unit that performs touch sensing. The display device substrate includes a black layer and a conductive layer in the observation direction. A first light-shielding conductive pattern formed of the same material as that of the first touch-sensing wiring and provided at the same position in a cross-sectional view; A second light-shielding conductive pattern formed of the same material as the two-touch touch sensing wiring and provided at the same position in a cross-sectional view, and a light-shielding frame surrounding the display unit by the first light-shielding conductive pattern and the second light-shielding conductive pattern Configure.

Description

  The present invention relates to a display device and a display device substrate that can reduce external noise such as static electricity or internal noise generated from a control system that drives a display function layer such as a liquid crystal layer, and more particularly to a display device having a touch sensing function. The present invention relates to a display device substrate used for the display device.

  In recent years, the resolution of a liquid crystal display device or a display device in which light emitting elements are arranged in a matrix (an organic electroluminescence display device or an LED matrix display device) has been improved, and the thickness has been reduced. In addition, mobile devices such as smartphones and tablets that are equipped with a display device having a screen size of 5 inches or 8 inches and capable of realizing high image quality are commercially available. In particular, an organic electroluminescence display device (hereinafter referred to as organic EL) can contribute to the thinning of such a mobile device.

  In an organic EL display device, an organic EL substrate provided with a white organic EL and a counter substrate provided with a color filter for realizing color display and disposed opposite to the organic EL substrate may be used. In order to obtain higher image quality, for example, a red light emitting LED chip, a green light emitting LED chip, and a blue light emitting LED chip are mounted on a small light emitting unit, and a plurality of light emitting units are arranged in a matrix on an array substrate. LED matrix display devices are also being developed. As the LED, a blue light emitting diode with high luminous efficiency is known, and a white LED in which a green phosphor and a red phosphor are arranged on a blue LED chip may be used.

The display function layer of the display device includes a liquid crystal layer, an organic EL layer (Organic Electroluminescence), an LED matrix layer formed by an LED chip (Light Emitting Diode), and an EMS (Electro Mechanical System) composed of electrical elements and mechanical elements. Or MEMS (Micro-Electro-Mechanical System). MEMS are optical components such as actuators, transducers, sensors, micromirrors, MEMS switches, and optical films, and interferometric modulators (IMOD).
Modulation).

In such a display device, a display device having a touch sensing function capable of inputting with a pointer such as a finger is becoming widespread.
In addition, in order to enlarge the display screen of mobile devices, the development of “narrow frame technology” is progressing to reduce the width of the frame portion located around the effective display area (display screen). In this frame portion, generally, a peripheral circuit formed by a polysilicon TFT or an oxide semiconductor TFT (thin film transistor, hereinafter referred to as an active element) is formed.

  However, in the display device, due to the narrowing of the frame and the addition of a touch sensing function, the number of electrical noise generation sources has increased, and various problems have arisen. For example, static electricity on the hand or human body tends to adversely affect a display device having a touch sensing function. Touch sensing may cause a malfunction by touching the display device with a hand or a finger. In addition, static electricity stored in the human body may ride on a driver IC (Integrated Circuit) located in a control system wiring or a frame portion related to display, and may cause a display failure of the display device.

  Patent Document 1 discloses a configuration in which a conductive film formed of a transparent conductive material has a shielding function and has a ground potential (grounded). Furthermore, corrosion resistance is also realized by using the second conductive film in combination. However, since the resistance value of the transparent conductive material is high, a capacitance due to static electricity is easily formed, and electric charges are likely to ride on the wiring for driving the liquid crystal (particularly the common wiring) and the touch sensing wiring provided on the touch panel. Further, since the transparent conductive material has a high resistance value, the resistance value is insufficient to shield high-frequency noise.

  Patent Document 2 proposes a configuration including a first touch drive electrode provided on a first substrate and a second touch drive electrode and a touch detection electrode provided on a second substrate. As a noise reduction technique, as shown in FIG. 8 of Patent Document 2, the second touch drive electrode 52 is disposed away from the peripheral circuit 80 that is a noise generation source. However, simply increasing the distance from the peripheral circuit 80 to the second touch drive electrode 52 is not sufficient as a noise countermeasure. For example, Patent Document 2 does not consider the influence of external noise such as static electricity generated from a finger or a human body. In addition, in a display device that requires high reliability such as an in-vehicle display device, the withstand voltage standard related to electrostatic discharge is strict. In Patent Document 2, such countermeasures against external noise are not considered. In Patent Document 2, a peripheral circuit including a switching element related to driving of an active element is provided in a frame portion positioned around the display area. Patent Document 2 describes a technique for narrowing the frame of a display device. Is disclosed. An active element such as a transistor formed in a peripheral circuit is often a thin film transistor including a channel layer formed of a polysilicon semiconductor.

Patent Document 3 relates to a liquid crystal display device in which a touch sensor and a display device are integrated. Patent Document 3 discloses a technique for creating a touch screen on an array substrate using a bypass tunnel or the like.
In Patent Document 3, not only signal lines (gate lines and source lines) and pixel electrodes connected to polysilicon transistors, but also a sense area related to touch sensing, a drive-sense ground area, a bypass tunnel, and the like are arranged on the same array substrate. It is necessary to arrange on top. For this reason, in Patent Document 3, the array structure is extremely complicated, the parasitic capacitance is likely to increase, and the load in the manufacturing process of the array substrate is large.

  Patent Document 4 relates to an in-plane switching (IPS) liquid crystal display device, and discloses a technique of providing a touch drive electrode and an electrode pair used for touch sensing in the same plane. In Patent Document 3 and Patent Document 4, touch sensing wiring (hereinafter referred to as touch wiring) is arranged on an array substrate (surface on which an active element is formed). In this configuration, there is a problem that the touch wiring is arranged near the TFT wiring that transmits the video signal and the gate signal to the active element, and noise due to the video signal is easily applied to the touch wiring.

  Patent Document 5 discloses a structure including a gate line driving unit that outputs a selection signal for switching a specific gate line to a selected or non-selected state. Each of the gate line driving units is formed in the display region, and for example, various displays can be performed at different driving frequencies according to the control signal. Within the display area, a still image can be partially displayed, or the drive frequency can be lowered to reduce power consumption. For example, when a still image or an image is displayed at a low driving frequency, the gate line is selected between some frames of the plurality of frames, and the gate line between other frames. By switching the selection state of the gate line so as to be in a non-selected state, power consumption can be reduced and image quality can be improved. From this viewpoint, the technique described in Patent Document 5 is excellent. However, as disclosed in FIG. 6A to FIG. 7 of Patent Document 5, in addition to the active element TFT-PIX that drives the pixel (PIX), switching of TFT-D, TFT-E, TFT-F, etc. It is necessary to add a new element. These added switching elements are further provided with a wiring 13N.

  Patent Document 6 discloses a copper wiring in which a copper-containing layer is sandwiched between conductive metal oxides containing indium oxide and tin oxide as touch sensing wiring. However, measures against noise (including malfunction of touch sensing) caused by a pointer such as a finger in touch sensing and noise generated from peripheral circuits as described above are not taken into consideration.

Japanese Unexamined Patent Publication No. 2011-95451 Japanese Unexamined Patent Publication No. 2014-53000 Japanese Patent No. 5,746,736 Japanese Patent No. 4584342 International Publication 2014/142183 Pamphlet Japanese Patent No. 5807726

  As described above, in the display device, the structure of the array substrate is complicated due to the addition of the touch sensing function, the narrowing of the frame, the addition of switching elements for reducing the power consumption and the image quality, and the like. . As the structure of the array substrate becomes complicated, the number of noise generation sources has increased, and it has become difficult to ensure an S / N ratio in touch sensing.

  The present invention has been made in view of the above problems, and provides a display device and a display device substrate that achieve high touch sensing accuracy and have a touch sensing function.

  The display device according to the first aspect of the present invention includes a display functional layer, an array substrate that drives the display functional layer, a first surface facing the array substrate, and a second surface opposite to the first surface. And a transparent substrate having a structure in which a first black layer and a first conductive layer are sequentially stacked in an observation direction from the second surface toward the first surface, and on the second surface. A first sensing pattern including a plurality of first touch sensing wires extending parallel to each other so as to be aligned in one direction; and a second black layer and a second conductive layer are sequentially stacked in the observation direction. And a plurality of second touch sensings positioned between the plurality of first touch sensing wires and the array substrate and extending parallel to each other so as to be aligned in a second direction orthogonal to the first direction in plan view. Second sensing pattern including wiring A first light-shielding conductive pattern formed of the same material as the first touch sensing wiring and provided at the same position as the first touch sensing wiring in a cross-sectional view and positioned outside the first sensing pattern; A second light-shielding conductive pattern formed of the same material as the touch sensing wiring and provided at the same position in cross-sectional view as the second touch sensing wiring and located outside the second sensing pattern, and faces the display function layer A display device substrate that includes a display portion, a light-shielding frame portion that surrounds the display portion and is configured by a part of the first sensing pattern, the first light-shielding conductive pattern, and the second light-shielding conductive pattern. And detecting a change in capacitance between the first touch sensing wiring and the second touch sensing wiring. Comprising a control unit for performing sensing, and.

  In the display device according to the first aspect of the present invention, the first touch sensing wiring and the second touch sensing wiring are formed on the second surface, and the first touch sensing wiring and the second touch sensing are formed. An insulating layer may be provided between the wiring and the first touch sensing wiring and the second touch sensing wiring may be electrically insulated from each other.

  In the display device according to the first aspect of the present invention, the first touch sensing wiring may be formed on the second surface, and the second touch sensing wiring may be formed on the first surface. Good.

  In the display device according to the first aspect of the present invention, the first touch sensing wiring and the second touch sensing wiring are sequentially formed on the first surface in the observation direction, and the first touch sensing is performed. An insulating layer may be provided between the wiring and the second touch sensing wiring, and the first touch sensing wiring and the second touch sensing wiring may be electrically insulated from each other.

  The display device according to the first aspect of the present invention may include a housing surrounding the array substrate and the display device substrate, and the first light-shielding conductive pattern may be grounded to the housing.

  In the display device according to the first aspect of the present invention, the second light-shielding conductive pattern may have a plurality of light-shielding conductive parts divided by slits.

  In the display device according to the first aspect of the present invention, the array substrate includes a channel layer made of an oxide semiconductor in contact with the gate insulating layer, and an active element that drives the display functional layer. You may prepare.

  In the display device according to the first aspect of the present invention, the oxide semiconductor contains a metal oxide containing at least one selected from the group consisting of gallium, indium, zinc, tin, aluminum, germanium, and cerium. And a metal oxide containing at least one of antimony and bismuth.

  In the display device according to the first aspect of the present invention, the gate insulating layer may be formed of a complex oxide containing cerium oxide.

  In the display device according to the first aspect of the present invention, among the plurality of wirings electrically linked to the active element, at least the gate wiring has three layers in which a copper alloy layer is sandwiched between conductive metal oxide layers. It may have a structure.

  In the display device according to the first aspect of the present invention, the array substrate includes an upper electrode and a lower electrode that sandwich the display functional layer, and the display functional layer is a light emitting diode layer, You may light-emit by the drive voltage applied between lower electrodes.

  In the display device according to the first aspect of the present invention, the array substrate includes an upper electrode and a lower electrode that sandwich the display functional layer, and the display functional layer is an organic electroluminescence layer, and the upper electrode And the lower electrode may emit light.

  In the display device according to the first aspect of the present invention, at least one of the upper electrode and the lower electrode may have a structure in which a silver alloy layer is sandwiched between conductive metal oxide layers.

  In the display device according to the first aspect of the present invention, the display functional layer is a liquid crystal layer, the array substrate includes a common electrode and a pixel electrode that sandwich the liquid crystal layer, and the liquid crystal layer includes the common You may drive by the electrical potential difference between an electrode and the said pixel electrode.

  In the display device according to the first aspect of the present invention, the common electrode may be provided closer to the display device substrate than the pixel electrode in a cross-sectional view.

  A display device substrate according to a second aspect of the present invention includes a transparent substrate having a first surface and a second surface opposite to the first surface, and any one of the first surface and the second surface. The first black layer and the first conductive layer are sequentially stacked in the observation direction from the second surface toward the first surface, and are formed in the first direction on the second surface. A first sensing pattern including a plurality of first touch sensing wires extending in parallel to each other so as to be arranged, and formed on one of the first surface and the second surface, and a second black layer in the observation direction; And a plurality of second touch sensing wirings extending in parallel to each other so as to be arranged in a second direction orthogonal to the first direction in a plan view. 2 sensing patterns and the first touch sensor The first light-shielding conductive pattern, which is formed of the same material as the wiring, is provided at the same position in cross-sectional view as the first touch sensing wiring, and is located outside the first sensing pattern, and the same as the second touch sensing wiring A second light-shielding conductive pattern formed of a material, provided at the same position in cross-sectional view as the second touch sensing wiring, and located outside the second sensing pattern; a part of the first sensing pattern; 1 light shielding conductive pattern, and the light-shielding frame part comprised by the said 2nd light shielding conductive pattern.

  In the display device according to the second aspect of the present invention, the transparent substrate may have a short side and a long side in plan view, and the first light-shielding conductive pattern may be provided in parallel with the long side. Good.

  In the display device according to the second aspect of the present invention, the second light-shielding conductive pattern has a plurality of slits parallel to the first touch sensing wiring, and the plurality of first touch sensing wirings in a plan view. An overlapping portion where the plurality of slits overlap is formed, and the overlapping portion may constitute the frame portion.

  In the display device according to the second aspect of the present invention, the first conductive layer and the second conductive layer may have a three-layer structure in which at least a copper alloy layer is sandwiched between conductive metal oxide layers. Good.

  In the display device according to the second aspect of the present invention, the display device includes a plurality of pixels partitioned by the plurality of first touch sensing wires and the plurality of second touch sensing wires in a plan view, A color filter may be provided.

  According to an aspect of the present invention, it is possible to provide a display device and a display device substrate having a function of realizing high-accuracy touch sensing by reducing internal noise generated from a peripheral circuit or external noise from the outside of the display device. Can do.

It is a block diagram which shows the control part (a video signal control part, a system control part, and a touch sensing control part) and a display part which comprise the display apparatus which concerns on 1st Embodiment of this invention. It is sectional drawing which shows partially the display apparatus which concerns on 1st Embodiment of this invention. It is a figure which shows the opposing board | substrate with which the display apparatus which concerns on 1st Embodiment of this invention is provided, Comprising: It is the top view which looked at the display apparatus from the observer side. FIG. 3 is a diagram illustrating a counter substrate included in the display device according to the first embodiment of the present invention, and includes a first sensing pattern having a plurality of first touch sensing wires provided on the counter substrate, and outside the first sensing pattern. It is a top view which shows the 1st light-shielding conductive pattern located. FIG. 3 is a diagram illustrating a counter substrate included in the display device according to the first embodiment of the present invention, and includes a second sensing pattern having a plurality of second touch sensing wirings provided on the counter substrate, and outside the second sensing pattern. It is a top view which shows the 2nd light-shielding conductive pattern located. It is a top view which shows partially the frame part of the opposing board | substrate with which the display apparatus which concerns on 1st Embodiment of this invention is provided, Comprising: The slit of a 2nd light-shielding conductive pattern and the 1st touch-sensing wiring are obtained by the overlapping part which overlaps. It is a figure explaining the light-shielding property. FIG. 4 is a diagram partially showing a liquid crystal layer included in the display device according to the first embodiment of the present invention and a frame portion of the counter substrate, and is a cross-sectional view taken along line A-A ′ of FIG. 3. It is a figure which shows the 1st touch sensing wiring, insulating layer, and 2nd touch sensing wiring which were provided in the opposing board | substrate which concerns on 1st Embodiment of this invention, Comprising: The expansion shown which shows the part shown by the code | symbol W1 in FIG. It is sectional drawing. It is a top view which shows partially the array substrate with which the display apparatus which concerns on 1st Embodiment of this invention is provided. It is sectional drawing which shows partially the array substrate with which the display apparatus which concerns on 1st Embodiment of this invention is provided, and is sectional drawing which follows the C-C 'line | wire shown in FIG. FIG. 2 is a circuit diagram partially showing the display device according to the first embodiment of the present invention, and is an explanatory diagram showing a state of a liquid crystal driving voltage in each pixel when the liquid crystal display device is driven by column inversion driving. FIG. 3 is a circuit diagram partially showing the display device according to the first embodiment of the present invention, and is an explanatory diagram showing a state of a liquid crystal driving voltage in each pixel when the liquid crystal display device is driven by dot inversion driving. It is sectional drawing which shows partially the display apparatus which concerns on 2nd Embodiment of this invention. It is sectional drawing which shows partially the liquid-crystal layer with which the display apparatus which concerns on 2nd Embodiment of this invention is provided, and the frame part of a counter substrate. It is a figure which shows the 2nd touch sensing wiring provided in the counter substrate which concerns on 2nd Embodiment of this invention, Comprising: It is an expanded sectional view which shows the part shown with the code | symbol W2 in FIG. It is a figure which shows the opposing board | substrate with which the display apparatus which concerns on 2nd Embodiment of this invention is provided, Comprising: It is the top view which looked at the display apparatus from the observer side. It is sectional drawing which shows partially the display apparatus which concerns on 3rd Embodiment of this invention. It is sectional drawing which shows partially the frame part of the opposing board | substrate with which the display apparatus which concerns on 3rd Embodiment of this invention is provided. It is a figure which shows the opposing board | substrate with which the display apparatus which concerns on 3rd Embodiment of this invention is provided, Comprising: It is the top view which looked at the display apparatus from the observer side. It is sectional drawing which shows partially the array substrate which concerns on 3rd Embodiment of this invention. FIG. 21 is a diagram partially showing a pixel electrode that constitutes an array substrate according to a third embodiment of the present invention, and is an enlarged cross-sectional view showing a part indicated by a symbol W3 in FIG. 20. It is sectional drawing which shows partially the gate electrode which comprises the array substrate which concerns on 3rd Embodiment of this invention.

Hereinafter, embodiments of the present invention will be described with reference to the drawings.
In the following description, the same or substantially the same functions and components are denoted by the same reference numerals, and the description thereof is omitted or simplified, or only when necessary. In each of the drawings, the dimensions and ratios of the respective components are appropriately changed from the actual ones in order to make the respective components large enough to be recognized on the drawings. In addition, if necessary, illustrations of elements that are difficult to illustrate, for example, a configuration of a plurality of layers that form a semiconductor channel layer, a configuration of a plurality of layers that form a conductive layer, and a part of the configurations are omitted. .

In each of the embodiments described below, characteristic parts will be described. For example, description of parts having no difference between components used in a normal display device and the display device according to the present embodiment will be omitted. .
In the following description, wirings, electrodes, and signals related to touch sensing may be simply referred to as touch drive wirings, touch detection wirings, touch wirings, touch electrodes, and touch signals. In addition, the first touch sensing wiring and the second touch sensing wiring may be simply referred to as touch sensing wiring. A voltage applied to the touch sensing wiring for performing the touch sensing drive is referred to as a touch drive voltage.
The first black layer and the second black layer may be simply referred to as a black layer, and the first conductive layer and the second conductive layer may be simply referred to as a conductive layer.

In the embodiment using a liquid crystal layer as the display functional layer, illustration of an optical functional film such as a backlight unit and a polarizing plate, an alignment film, and the like are omitted. A voltage applied between the common electrode and the pixel electrode for driving the liquid crystal layer may be referred to as a liquid crystal driving voltage. The liquid layer driving voltage may be referred to as a pixel driving voltage.
In an embodiment using a light emitting layer (organic EL or LED) as the display function layer, an upper electrode and a lower electrode (hereinafter, the lower electrode is referred to as a pixel electrode or a reflective electrode) in order to drive the light emitting layer (organic EL or LED). The voltage applied during the period is referred to as a pixel drive voltage. The driving of the light emitting layer is sometimes simply referred to as pixel driving.

(First embodiment)
(Functional configuration of display device DSP1)
Hereinafter, a display device DSP1 according to a first embodiment of the present invention will be described with reference to FIGS.
FIG. 1 is a block diagram showing a display device DSP1 according to the first embodiment of the present invention. As shown in FIG. 1, the display device DSP1 according to the present embodiment includes a display unit 110 and a control unit 120 for controlling the display unit 110 and the touch sensing function.
The control unit 120 has a known configuration, and includes a video signal control unit 121 (first control unit), a touch sensing control unit 122 (second control unit), and a system control unit 123 (third control unit). I have.

  The video signal control unit 121 sets a common electrode 17 (described later) provided on the array substrate 200 to a constant potential, and gate wirings 9 and 10 (described later, scanning lines) and source wirings 31 provided on the array substrate 200. A signal is sent to 32 (described later, a signal line). The video signal control unit 121 applies a display liquid crystal driving voltage (potential difference) between the common electrode 17 and the pixel electrode 29 (described later), thereby generating a fringe electric field on the array substrate 200, and along the fringe electric field. As a result, the liquid crystal molecules rotate and the liquid crystal layer 300 is driven. As a result, an image is displayed on the array substrate 200. For example, a video signal having a rectangular wave is individually applied to each of the plurality of pixel electrodes 29 via source wirings 31 and 32 (signal lines). Further, the rectangular wave may be a positive or negative DC rectangular wave or an AC rectangular wave. The video signal control unit 121 sends such a video signal to the source wiring.

  The touch sensing control unit 122 applies a touch sensing driving voltage to the second touch sensing wiring 2 (described later), and detects a change in capacitance generated between the first touch sensing wiring 1 and the second touch sensing wiring 2. And touch sensing.

The system control unit 123 can control the video signal control unit 121 and the touch sensing control unit 122 to perform liquid crystal driving and capacitance change detection alternately, that is, in a time division manner.
In addition, the system control unit 123 may have a function of performing the above-described driving by changing the frequencies of the liquid crystal driving and the touch sensing driving, or the driving voltage of the liquid crystal driving and the touch sensing driving may be different from each other. It may have a function of performing the driving. In the system control unit 123 having such a function, for example, a frequency of noise from the external environment picked up by the display device DSP1 is detected, and a touch sensing driving frequency different from the noise frequency is selected. Thereby, the influence of noise can be reduced. Further, in such a system control unit 123, a touch sensing driving frequency can be selected in accordance with the scanning speed of a pointer such as a finger or a pen.

  The display device DSP1 including the control unit 120 is a touch sensing function-integrated display device that has both a touch sensing function and an image display function. The display device DSP1 uses a capacitive touch sensing technology using two wiring groups arranged via an insulating layer, that is, a plurality of first touch sensing wirings 1 and a plurality of second touch sensing wirings 2. We are using. For example, when a pointer such as a finger contacts or approaches a counter substrate 100 (described later), a change in capacitance that occurs at the intersection of the first touch sensing wiring 1 and the second touch sensing wiring 2 is detected, and the finger or the like is detected. The position of the pointer is detected. Moreover, the code | symbol K in FIG. 1 has shown the housing | casing K of the display apparatus DSP1 which concerns on this embodiment. The array substrate 200 and the counter substrate 100 are surrounded by the housing K, and the array substrate 200 and the counter substrate 100 are integrated.

(Structure of display device DSP1)
FIG. 2 is a sectional view partially showing the display device DSP1 according to the first embodiment of the present invention.
The display device DSP1 according to the present embodiment includes a display device substrate according to an embodiment described later. The “plan view” described below means a plane viewed from the direction in which the observer observes the display surface (the plane of the display device substrate) of the display device DSP1. The shape of the display unit of the display device according to the embodiment of the present invention, the shape of the pixel opening defining the pixel, and the number of pixels constituting the display device are not limited.

In the embodiment described in detail below, the direction along the short side of the display unit is defined as the X direction (first direction), the direction along the long side of the display unit is defined as the Y direction (second direction), and The display device will be described with the thickness direction of the transparent substrate defined as the Z direction.
In the following embodiments, the X direction and the Y direction defined as described above are switched, that is, the X direction is defined as the second direction and the Y direction is defined as the first direction, and the display device is configured. May be.

  As shown in FIG. 2, the display device DSP1 is sandwiched between the counter substrate 100 (display device substrate), the array substrate 200 bonded so as to face the counter substrate 100, and the counter substrate 100 and the array substrate 200. Liquid crystal layer 300. In the display device DSP1 shown in FIG. 2, an optical film having various optical functions, a cover glass for protecting the counter substrate 100, and the like are omitted.

(Structure of counter substrate 100)
As illustrated in FIG. 2, the counter substrate 100 includes a transparent substrate 40 (first transparent substrate) having a first surface MF and a second surface MS opposite to the first surface MF. The first surface MF is a surface facing the array substrate 200. The second surface MS is a surface facing the observer.
The substrate that can be used as the transparent substrate 40 may be a substrate that is transparent in the visible range, and a glass substrate, a ceramic substrate, a quartz substrate, a sapphire substrate, a plastic substrate, or the like can be used.

(Sensing pattern and light-shielding conductive pattern)
FIG. 3 is a diagram showing the counter substrate 100 included in the display device DSP1 according to the first embodiment of the present invention, and is a plan view of the display device DSP1 viewed from the observer side P. FIG. That is, it is a plan view of the second surface MS of the transparent substrate 40.
Above the second surface MS of the transparent substrate 40, a first sensing pattern PT1 including a plurality of first touch sensing wires 1, a second sensing pattern PT2 including a plurality of second touch sensing wires 2, and a first light shielding. A conductive pattern F21 and a second light-shielding conductive pattern F22 are provided.
An insulating layer I (touch wiring insulating layer) is provided between the plurality of first touch sensing wires 1 and the plurality of second touch sensing wires 2, and the first touch sensing wire 1 and the second touch sensing wire are provided. 2 are electrically insulated from each other by an insulating layer I.

The first light-shielding conductive pattern F21 is formed of the same material as that of the first touch sensing wiring 1, is provided at the same position as the first touch sensing wiring 1, and is located outside the first sensing pattern PT1.
The second light-shielding conductive pattern F22 is formed of the same material as that of the second touch sensing wiring 2, is provided at the same position as the second touch sensing wiring 2, and is located outside the second sensing pattern PT2.
The first light-shielding conductive pattern F21 and the second light-shielding conductive pattern F22 constitute a light-shielding frame portion F, and the frame portion F surrounds the display unit 110 facing the liquid crystal layer (display function layer).
As will be described later, since the first touch sensing wiring 1 and the second touch sensing wiring 2 have a configuration in which a black layer and a conductive layer are laminated, the layer configuration of the first light-shielding conductive pattern F21 is the first configuration. The layer configuration of the touch sensing wiring 1 is the same, and the layer configuration of the second light-shielding conductive pattern F22 is the same as the layer configuration of the second touch sensing wiring 2.
Specifically, the first light-shielding conductive pattern F21 and the first sensing pattern PT1 are simultaneously patterned in the same process. The second light-shielding conductive pattern F22 and the second sensing pattern PT2 are simultaneously patterned and formed in the same process.

FIG. 4 is a diagram illustrating the counter substrate 100 included in the display device DSP1 according to the first embodiment of the present invention, and includes a first sensing pattern PT1 having a plurality of first touch sensing wires 1 provided on the counter substrate 100. And a plan view showing the first light-shielding conductive pattern F21 located outside the first sensing pattern PT1.
In FIG. 4, the second light-shielding conductive pattern F22 and the second sensing pattern PT2 shown in FIG. 3 are omitted.

  As shown in FIGS. 2 and 4, the plurality of first touch sensing wires 1 are located above the second surface MS, are arranged in the X direction, and extend in the Y direction in parallel with each other. A first terminal TM1 is provided at an end of the first touch sensing wiring 1 in the Y direction. The plurality of first touch sensing wires 1 form a first sensing pattern PT1.

  A first light-shielding conductive pattern F21 formed in a U shape so as to surround the first sensing pattern PT1 is disposed outside the first sensing pattern PT1. Specifically, the long side portions F21L of the first light-shielding conductive pattern F21 are located on both sides of the first sensing pattern PT1 in the X direction. The long side portion F21L extends in the Y direction. That is, of the long side and the short side of the transparent substrate 40, the long side portion F <b> 21 </ b> L of the first light-shielding conductive pattern F <b> 21 is provided in parallel to the long side of the transparent substrate 40. The short side portion F21S of the first light-shielding conductive pattern F21 is located at the end portion (left side in FIG. 4) of the first sensing pattern PT1 in the Y direction. The short side portion F21S extends in the X direction. The first light-shielding conductive pattern F21 is grounded to the housing K.

FIG. 5 is a diagram illustrating the counter substrate 100 included in the display device DSP1 according to the first embodiment of the present invention, and a second sensing pattern PT2 having a plurality of second touch sensing wires 2 provided on the counter substrate 100. And a second light-shielding conductive pattern F22 located outside the second sensing pattern PT2. Each of the second light-shielding conductive patterns F22 is electrically independent.
In FIG. 5, the first light-shielding conductive pattern F21 and the first sensing pattern PT1 shown in FIG. 3 are omitted.

  As shown in FIGS. 2 and 5, the plurality of second touch sensing wires 2 are located between the plurality of first touch sensing wires 1 and the array substrate 200. In the present embodiment, the second surface MS is formed on the second surface MS. Located above. The second touch sensing wiring 2 has a sense wiring 2A and a lead wiring 2B. The sense wirings 2A are arranged in the Y direction and extend in the X direction in parallel with each other. The sense wiring 2A is connected to the lead-out wiring 2B on the outer side (the frame portion F) of the display unit 110. The lead wires 2B are arranged in the X direction and extend in the Y direction in parallel with each other. A second terminal TM2 is provided at the end of the lead-out wiring 2B in the Y direction. The plurality of second touch sensing wires 2 form a second sensing pattern PT2.

  The second light-shielding conductive pattern F22 includes a plurality of first light-shielding conductive portions F22A (light-shielding conductive portions) located on the left side (substrate tip in the Y direction) of the counter substrate 100 and the right side of the counter substrate 100 (in the Y direction) in FIG. A plurality of second light-shielding conductive portions F22B (light-shielding conductive portions) located at the base end of the substrate. Further, the first light-shielding conductive portions F22A adjacent to each other and the second light-shielding conductive portions F22B adjacent to each other are divided and partitioned by the slits S. The plurality of slits S that define the second light-shielding conductive portion F <b> 22 </ b> B are parallel to the first touch sensing wiring 1. Further, in the plurality of first light shielding conductive portions F22A, any one of the light shielding conductive portions is divided by a cross-shaped slit CS. In other words, the second light-shielding conductive pattern F22 is divided into a plurality of light-shielding conductive portions (a plurality of patterns) by the slit pattern, and the second light-shielding conductive pattern F22 has a plurality of large and small light-shielding conductive portions.

Thus, it is preferable that the 2nd light shielding conductive pattern F22 is divided | segmented into the some pattern by the slit which divides the 2nd light shielding conductive pattern F22. There may be a plurality of types of the light-shielding conductive patterns and the sizes of the light-shielding conductive patterns thus divided.
By forming the second light-shielding conductive pattern F22 so as to overlap the first light-shielding conductive pattern F21 in plan view, an electrically pseudo capacitor is formed between the second light-shielding conductive pattern F22 and the first light-shielding conductive pattern F21. Can be provided. By forming this capacitor, low-frequency noise (for example, noise generated from a driver circuit or the like) is less likely to be transmitted in the thickness direction of the second light-shielding conductive pattern F22 and the first light-shielding conductive pattern F21. Such a capacitor is preferably the second light-shielding conductive pattern F22 having a plurality of types of characteristics, in other words, including light-shielding conductive portions having different sizes. In plan view, the shape of the light-shielding conductive portion is arbitrarily set. Note that noise with a high frequency escapes to the ground via the grounded first light-shielding conductive pattern F21 and hardly passes through the conductive pattern.

  The effect obtained by the second light-shielding conductive pattern F22 and the first light-shielding conductive pattern F21 described above cannot be sufficiently obtained by the transparent conductive film pattern such as ITO having a high resistance value. As a part of the second light-shielding conductive pattern F22 or the first light-shielding conductive pattern F21, it is preferable to use a thin film formed of copper, silver, a copper alloy, or a silver alloy. Since the second light-shielding conductive pattern F22 and the first light-shielding conductive pattern F21 can be formed at the same time in the process of forming the first touch sensing wiring 1 and the second touch sensing wiring 2, the second light shielding conductive pattern F22 and the first light shielding conductive pattern F21 can be formed without increasing the manufacturing process. There is an advantage that the two light-shielding conductive patterns F22 and the first light-shielding conductive pattern F21 can be formed. By using the second light-shielding conductive pattern F22 and the first light-shielding conductive pattern F21 according to the present embodiment, a display device having a shielding effect against various noises including electrostatic noise can be realized.

  FIG. 6 is a plan view partially showing the frame portion F of the counter substrate 100 included in the display device DSP1 according to the first embodiment of the present invention, and the slit S of the second light-shielding conductive pattern F22 and the first touch sensing. It is a figure explaining the light-shielding property obtained by the overlapping part with which the wiring 1 overlaps.

6A partially shows the first terminal TM1 shown in FIG. 4 and a part (reference numeral 1 ′) of the first touch sensing wiring 1 extending from the first terminal TM1 toward the display unit 110. FIG. It is a top view. The first terminal TM1 is an exposed portion where a first black layer 16 described later is removed and the first conductive layer 15 is exposed, and is a portion that functions as a pad (terminal portion).
FIG. 6B is a plan view partially showing the second light-shielding conductive portion F22B shown in FIG. The second light-shielding conductive portions F22B (second light-shielding conductive patterns F22) adjacent to each other are partitioned by the slits S. In FIG. 6A and FIG. 6B, the width WS of the slit S is the same as the width H1 of the first touch sensing wiring 1. The arrangement pitch PS in the X direction in which the plurality of slits S are arranged is the same as the arrangement pitch P1 in the X direction in which the first touch sensing wiring 1 is arranged.

For this reason, as shown in FIG. 6C, if a part of the first touch sensing wiring 1 shown in FIG. 6A and the slit S shown in FIG. The position of the wiring 1 and the position of the slit S coincide, and a plurality of overlapping portions 3 are formed. The overlapping portion 3 constitutes a light-shielding frame portion F.
In the overall structure of the counter substrate 100, as shown in FIGS. 3, 4, and 6, a part of the first touch sensing wiring 1 (overlapping portion 3) and the first light-shielding conductive pattern F21 (long side) The frame portion F is configured by the portion F21L and the short side portion F21S) and the second light-shielding conductive portion F22B (second light-shielding conductive pattern F22).

Here, the plurality of second light-shielding conductive portions F22B are subdivided so as not to generate a large parasitic capacitance. If the width WS of the slit S is set to be shorter than the wavelength of the average frequency of noise generated from the peripheral circuit 80 shown in FIG. 7, it is less susceptible to noise.
As described above, the overlapping portion 3 is formed by the plurality of second light-shielding conductive portions F22B constituting the second light-shielding conductive pattern F22 and a part of the plurality of first touch sensing wires 1. The superimposing unit 3 can prevent noise leakage and light leakage from a backlight unit (not shown).

  The resistance values of the first light-shielding conductive pattern F21 and the second light-shielding conductive pattern F22 are desirably low. It is preferable to use a metal having high conductivity in a part of each layer configuration of the first light-shielding conductive pattern F21 or the second light-shielding conductive pattern F22. Although a slit may be formed in the first light-shielding conductive pattern F21, it is desirable that the first light-shielding conductive pattern F21 is grounded in order to reduce the influence of noise caused by static electricity. For example, it is desirable that the first light-shielding conductive pattern F21 is grounded to the housing K as in the present embodiment.

  When the display device DSP1 is used, a high potential such as static electricity is applied to the display device DSP1 from the outside of the display device DSP1, or when the display device DSP1 is held by a hand or a finger, static electricity is generated from the finger or the like. May join. Even in such a case, the influence of static electricity can be reduced by grounding the first light-shielding conductive pattern F21. As a structure for grounding the first light-shielding conductive pattern F21 to a member constituting the display device DSP1, a structure in which the first light-shielding conductive pattern F21 is connected to the housing K of the display device DSP1 is often used. A ground potential used for displaying such as may be used as a ground potential.

FIG. 7 is a diagram partially showing the liquid crystal layer 300 included in the display device DSP1 according to the first embodiment of the present invention and the frame portion F of the counter substrate 100, which is taken along the line AA ′ of FIG. It is sectional drawing which follows.
As shown in FIG. 7, a peripheral circuit 80 related to liquid crystal driving is formed on the array substrate 200. The peripheral circuit 80 is located under the frame portion F shown in FIG. In the peripheral circuit 80, for example, TFTs that drive active elements of the array substrate 200, capacitive elements, resistance elements, and the like are provided on the surface of the frame portion 200F of the array substrate 200 (a region that coincides with the frame portion F in plan view). It has been. The electrical noise generated from the peripheral circuit 80 is cut at the frame portion F, and the influence of noise on the first touch sensing wiring 1 that is a touch detection electrode can be reduced. The cell gap (thickness) of the liquid crystal layer 300 is controlled by the spacer 103. A seal layer 104 is provided around the liquid crystal layer 300. The liquid crystal layer 300 is surrounded by the counter substrate 100, the array substrate 200, and the seal layer 104.

  The plurality of first terminals TM <b> 1 and the plurality of second terminals TM <b> 2 shown in FIGS. 3 to 6 are connected to the touch sensing control unit 122. For example, as shown in FIG. 7, the first terminal TM1 of the first touch sensing wiring 1 is electrically connected to a terminal provided on the flexible printed circuit board FPC via the anisotropic conductive film 101. . Instead of the anisotropic conductive film 101, a conductor such as a minute metal sphere or a resin sphere covered with a metal film may be used. The touch sensing control unit 122 is electrically connected to the first touch sensing wiring 1 and the second touch sensing wiring 2 through the flexible printed circuit board FPC and through the first terminal TM1 and the second terminal TM2.

  Each of the plurality of first touch sensing wires 1 and each of the plurality of second touch sensing wires 2 are electrically independent. The first touch sensing wiring 1 and the sense wiring 2A are orthogonal to each other when viewed from the observer side P. A region defined by the plurality of first touch sensing wires 1 and the plurality of sense wires 2A is a pixel PX. The plurality of pixels PX are arranged in a matrix in the display unit 110. The shape of the opening in the pixel PX may be a square pattern, a rectangular pattern, a parallelogram pattern, or the like. Furthermore, the arrangement of the openings in the pixel PX may be an arrangement with moire countermeasures or a zigzag arrangement.

The plurality of first terminals TM1 and the plurality of second terminals TM2 are connected to the touch sensing control unit 122. Accordingly, the touch sensing control unit 122 is electrically connected to the first touch sensing wiring 1 and the second touch sensing wiring 2 through the first terminal TM1 and the second terminal TM2.
For example, the first touch sensing wiring 1 can be used as a touch detection electrode, and the second touch sensing wiring 2 can be used as a touch drive electrode. The touch sensing control unit 122 detects a change in the capacitance C1 that occurs between the first touch sensing wiring 1 and the second touch sensing wiring 2 as a touch signal.
Further, the role of the first touch sensing wiring 1 and the role of the second touch sensing wiring 2 may be interchanged. Specifically, the first touch sensing wiring 1 may be used as a touch drive electrode, and the second touch sensing wiring 2 may be used as a touch detection electrode.

  Note that all of the first touch sensing wiring 1 and the second touch sensing wiring 2 may not be used for touch sensing. Of the plurality of first touch sensing wires 1 and the plurality of second touch sensing wires 2, wires that are not used for touch sensing may be thinned out except for wires used for touch sensing. That is, thinning driving may be performed.

  Next, a case where the first touch sensing wiring 1 is thinned out will be described. First, all the first touch sensing wires 1 are divided into a plurality of groups. The number of groups is less than the number of all first touch sensing wires 1. Assume that the number of wires constituting one group is, for example, six. Here, out of all the wirings (the number of wirings is six), for example, two wirings are selected (the number smaller than the number of all the wirings, two <6). In one group, touch sensing is performed using two selected wirings, and the potentials of the remaining four wirings are set to floating potentials. Since the display device DSP1 has a plurality of groups, touch sensing can be performed for each group in which the wiring function is defined as described above. Similarly, thinning driving may be performed also in the second touch sensing wiring 2.

  A pointer used for touching is a finger and a pen is different in the area and capacity of a pointer that is in contact with or close to the pointer. The number of wires to be thinned out can be adjusted by such a large pointer. A pointer with a thin tip such as a pen or a needle tip can reduce the number of thinned wires and use a high-density touch sensing wiring matrix. Even during fingerprint authentication, a high-density touch sensing wiring matrix can be used.

  By performing touch sensing drive for each group in this way, the number of wires used for scanning or detection is reduced, so that the touch sensing speed can be increased. Further, in the above example, the number of wirings constituting one group is six. However, for example, one group is formed by the number of wirings of 10 or more, and two wirings selected in one group are connected. It may be used for touch sensing. That is, the number of thinned-out wirings (the number of wirings having a floating potential) is increased, thereby reducing the density of selected wirings used for touch sensing (the density of selected wirings with respect to the total number of wirings). By performing detection, it contributes to reduction of power consumption and improvement of touch detection accuracy. Conversely, by reducing the number of thinned lines, increasing the density of selected lines used for touch sensing, and performing scanning or detection using the selected lines, it can be used for, for example, fingerprint authentication or touch pen input.

  For example, the thinned wiring (wiring not used for touch sensing) is in an electrically floating state, that is, the potential is in a floating state. In order to obtain the proximity distance between the surface of the display device DSP1 (the surface facing the observer) and a pointer such as a finger, the potential of the first touch sensing wiring 1 or the second touch sensing wiring 2 can be set in a floating state. . After detecting the position of a pointer such as a finger, either the first touch sensing wiring 1 or the second touch sensing wiring 2 may be grounded and reset in order to improve the accuracy of the next detection signal (potential) To 0V). Further, in order to improve the accuracy of the detection signal, a voltage that alternately inverts the phase of the touch drive voltage may be employed. Such means for improving the accuracy of the touch detection signal is also effective when the pointer is an active pointer (for example, a pointer that generates a detection instruction signal from a pen-shaped pointer).

Regarding the floating pattern in the thinning driving described above, the first touch sensing wiring 1 and the second touch sensing wiring 2 may perform high-definition touch sensing by switching the detection electrode and the driving electrode by driving the switching element. .
Further, the above-described floating pattern in the thinning drive can be switched so as to be electrically connected to the ground (grounded to the housing). In order to improve the S / N ratio of touch sensing, when a touch sensing signal is detected, a signal wiring of an active element such as a TFT (thin film transistor) may be temporarily grounded to a ground (a housing or the like).

  Also, touch wiring that requires a relatively long time to reset the capacitance detected by touch sensing control, that is, touch wiring with a large time constant (product of capacitance and resistance) in touch sensing may be used. is there. In this case, for example, in the arrangement of touch wirings, odd-numbered wirings and even-numbered wirings may be alternately used for touch sensing to perform driving with the time constant adjusted.

  Further, driving and detection may be performed by grouping a plurality of touch wires. In the drive of grouping a plurality of touch wirings, the line sequential drive may not be adopted, and a collective detection drive method called a self-detection method may be adopted for each group. Moreover, you may perform a parallel drive per group. Further, in order to cancel noise such as parasitic capacitance, a difference detection method that takes a difference between detection signals of adjacent or adjacent touch wirings may be employed. Touch sensing wiring located in a region close to the frame portion (a region outside the display unit 110 and a region where image display is not performed) tends to be less sensitive to touch sensing than a touch sensing wiring located in the center of the display unit 110. There is. For this reason, the sensitivity difference may be reduced by adjusting the width and shape of the touch sensing wiring.

  In the touch sensing control unit 122 and the video signal control unit 121, touch sensing driving and liquid crystal driving (pixel driving) can be controlled by time-division driving. The frequency of touch driving may be adjusted according to the required speed of touch input. The touch drive frequency can be higher than the liquid crystal drive frequency. Since the touch timing with a pointer such as a finger is irregular and short, it is desirable that the touch drive frequency be high.

  There are some known means for differentiating the frequencies of the touch sensing drive and the pixel drive. For example, in normally-off liquid crystal drive, when black display (off), the backlight emission is turned off to perform black display, and touch sensing drive is performed during this black display period (a period that does not affect the liquid crystal display). Can do. In this case, various touch driving frequencies can be selected.

(Laminated structure of touch sensing wiring)
FIG. 8 is a diagram illustrating the first touch sensing wiring 1, the insulating layer I, and the second touch sensing wiring 2 provided on the counter substrate 100 according to the first embodiment of the present invention. It is an expanded sectional view which shows the part shown by.
In the present embodiment, the direction in which the observer P observes the display device DSP1, that is, the direction from the second surface MS to the first surface MF of the transparent substrate 40 is referred to as an observation direction OB.
The plurality of first touch sensing wires 1 have a configuration in which the first black layer 16 and the first conductive layer 15 are sequentially stacked in the observation direction OB. The plurality of second touch sensing wires 2 have a configuration in which the second black layer 36 and the second conductive layer 35 are sequentially stacked in the observation direction OB. The second black layer 36 has the same configuration as the first black layer 16. The second conductive layer 35 has the same configuration as the first conductive layer 15. That is, the first touch sensing wiring 1 and the second touch sensing wiring 2 have the same layer structure.
The insulating layer I is provided above the second surface MS and is disposed between the first touch sensing wiring 1 and the second touch sensing wiring 2.

Since each of the first touch sensing wiring 1 and the second touch sensing wiring 2 includes a black layer, the first touch sensing wiring 1 and the second touch sensing wiring 2 orthogonal to the lattice function function as a black matrix, Improve display contrast.
In FIG. 7, each of the first touch sensing wiring 1 and the second touch sensing wiring 2 has a two-layer stacked structure including a black layer and a conductive layer. However, the present invention limits this structure. do not do. Each of the first touch sensing wiring 1 and the second touch sensing wiring 2 may be formed in a stacked structure having more layers than two layers. Further, a three-layer laminated structure in which a conductive layer is sandwiched between two black layers may be employed.

The first conductive layer 15 may have, for example, a three-layer structure in which a copper alloy layer that is the metal layer 20 is sandwiched between a first conductive metal oxide layer 21 and a second conductive metal oxide layer 22.
In a cross-sectional view, the line widths of the black layer and the conductive layer constituting each of the first touch sensing wiring 1 and the second touch sensing wiring 2 can be made substantially the same. Specifically, after forming a conductive layer using a known photolithography technique, the dry etching using the patterned conductive layer as a mask is performed, so that the line width in a cross-sectional view of the black layer and the conductive layer is obtained. Can be formed so that they are substantially the same. For example, the technique described in JP-A-2015-004710 can be applied.

(Conductive metal oxide layer)
The metal layer 20 constituting at least part of the first conductive layer 15 and the second conductive layer 35 can be sandwiched between the conductive metal oxide layers 21 and 22. In other words, as a structure of the first conductive layer 15 and the second conductive layer 35, a three-layer structure including the first conductive metal oxide layer 21, the metal layer 20, and the second conductive metal oxide layer 22. Can be adopted. At the interface between the first conductive metal oxide layer 21 and the metal layer 20 or the interface between the second conductive metal oxide layer 22 and the metal layer 20, nickel, zinc, indium, titanium, molybdenum, tungsten, etc. A metal different from copper or an alloy layer of these metals may be further inserted.
Specifically, the first conductive metal oxide layer 21 and the second conductive metal oxide layer 22 are made of, for example, indium oxide, zinc oxide, antimony oxide, tin oxide, gallium oxide, and bismuth oxide. A composite oxide containing two or more metal oxides selected from the group described above can be employed. By adjusting the composition of these metal oxides, the value of the work function can be adjusted, and the carrier emission property when an organic EL is employed as the light emitting layer can be adjusted.

The amount of indium (In) contained in the first conductive metal oxide layer 21 and the second conductive metal oxide layer 22 needs to be greater than 80 at%.
That is, the conductive metal oxide layer is formed of a composite oxide containing indium oxide, zinc oxide, and tin oxide, and indium (In), zinc (Zn), and tin (Sn) contained in the composite oxide. The atomic ratio represented by / (In + Zn + Sn) is larger than 0.8, and the atomic ratio of Zn / Sn is larger than 1.
The amount of indium (In) is preferably greater than 80 at%. More preferably, the amount of indium (In) is greater than 90 at%. When the amount of indium (In) is less than 80 at%, the specific resistance of the conductive metal oxide layer to be formed increases, which is not preferable. If the amount of zinc (Zn) exceeds 20 at%, the alkali resistance of the conductive metal oxide (mixed oxide) decreases, which is not preferable. In the first conductive metal oxide layer 21 and the second conductive metal oxide layer 22 described above, both atomic percentages of metal elements in the mixed oxide (counting only metal elements not counting oxygen elements) It is. Antimony oxide or bismuth oxide can be added to the conductive metal oxide layer because metal antimony or bismuth oxide hardly forms a solid solution region with copper and suppresses copper diffusion in the laminated structure.

  When the first conductive metal oxide layer 21 and the second conductive metal oxide layer 22 contain tin oxide and zinc oxide, the amount of zinc (Zn) needs to be larger than the amount of tin (Sn). . If the tin content exceeds the zinc content, there will be problems with wet etching in the subsequent process. In other words, the metal layer made of copper or copper alloy is more easily etched than the conductive metal oxide layer, and the first conductive metal oxide layer 21, the metal layer 20, the second conductive metal oxide layer 22, A difference in width with the metal layer 20 is likely to occur.

When the first conductive metal oxide layer 21 and the second conductive metal oxide layer 22 contain tin oxide and zinc oxide, the first conductive metal oxide layer 21 and the second conductive metal oxide layer 22 The amount of tin (Sn) contained is preferably in the range of 0.5 at% to 6 at%. In comparison with indium element, by adding tin of 0.5 at% or more and 6 at% or less to the conductive metal oxide layer, a ternary mixed oxide film of indium, zinc, and tin (conductive composite) The specific resistance of the oxide layer can be reduced. If the amount of tin exceeds 6 at%, zinc is also added to the conductive metal oxide layer, so that the specific resistance of the ternary mixed oxide film (conductive composite oxide layer) becomes too large. By adjusting the amount of zinc and tin within the above range (0.5 at% or more and 6 at% or less), the specific resistance is approximately 3 × 10 ⁻⁴ Ωcm or more as the specific resistance of the single layer film of the mixed oxide film. It can be contained within a small range of 5 × 10 ⁻⁴ Ωcm or less. A small amount of other elements such as titanium, zirconium, magnesium, aluminum, and germanium can be added to the mixed oxide. However, in this embodiment, the specific resistance of the mixed oxide is not limited to the above range.

(Conductive layer)
The first conductive layer 15 and the second conductive layer 35 can be formed of a conductive material such as the metal layer 20. Examples of the metal layer 20 include a copper layer, a copper alloy layer, a silver layer, a silver alloy layer, an aluminum alloy layer containing aluminum (aluminum-containing layer), gold, titanium, molybdenum, or an alloy thereof. Can be adopted. Since nickel is a ferromagnetic material, it can be formed by vacuum film formation such as sputtering although the film formation rate is lowered. Chromium has the disadvantage of environmental pollution and a large resistance value, but can be used as a material for the metal layer according to the present embodiment. In order to obtain adhesion of the conductive layer to the transparent substrate 40 and the transparent resin layer, it is composed of copper, silver, or aluminum, magnesium, calcium, titanium, molybdenum, indium, tin, zinc, neodymium, nickel, aluminum, antimony. It is preferable to employ an alloy to which one or more metal elements selected from the group are added.

  As a metal layer used for the first conductive layer 15 and the second conductive layer 35 constituting each of the first touch sensing wiring 1 and the second touch sensing wiring 2, 1.5 at% calcium is added to silver. A silver alloy can be used. In each of the first conductive layer 15 and the second conductive layer 35, a three-layer structure in which the silver alloy layer is sandwiched by a composite oxide layer containing indium oxide, zinc oxide, and tin oxide can be used.

  In a three-layer structure sandwiched between conductive metal oxide layers, for example, magnesium or calcium added to copper or silver is selectively oxidized during heat treatment, and is formed at the interface between the conductive metal oxide and the metal layer. Easy to precipitate. Alternatively, magnesium oxide or calcium oxide tends to precipitate on the surface or cross section of a copper alloy or silver alloy by oxidation. Such selective oxidation or precipitation suppresses migration of copper and silver, and as a result, the reliability of the three-layer laminated structure can be improved. The amount of the metal element added to the metal layer 20 is preferably 4 at% or less because the resistance value of the copper alloy or the silver alloy is not increased greatly. As a film formation method for the copper alloy, the silver alloy, and the conductive metal oxide, for example, a vacuum film formation method such as sputtering can be used.

  When a copper alloy thin film, a silver alloy thin film, or an aluminum alloy thin film is employed as the metal layer 20, when the film thickness is 100 nm or more or 150 nm or more, visible light is hardly transmitted. Therefore, if the metal layer 20 which concerns on this embodiment has a film thickness of 100 nm-300 nm, for example, sufficient light-shielding property can be obtained. The film thickness of the metal layer 20 may exceed 300 nm. As will be described later, the material of the conductive layer can also be applied to wirings and electrodes provided on an array substrate described later. In the present embodiment, as the structure of the wiring that is electrically linked to the active element, for example, the structure of the gate electrode, the gate wiring, the common electrode, and the common wiring (described later), the metal layer is formed by the conductive metal oxide layer. It is possible to adopt a laminated structure in which is sandwiched.

  When the metal layer 20 is a copper layer, a copper alloy layer, or a silver layer or a silver alloy, the conductive metal oxide layer described above is selected from indium oxide, zinc oxide, antimony oxide, gallium oxide, bismuth oxide, and tin oxide. It is desirable that the composite oxide contains two or more metal oxides. A copper layer, a copper alloy layer, or a silver layer or a silver alloy has low adhesion to a transparent resin layer or a glass substrate (transparent substrate) constituting the color filter. For this reason, when a copper layer, a copper alloy layer, or a silver layer or a silver alloy copper layer is applied to a display device substrate as it is, it is difficult to realize a practical display device substrate. However, the composite oxide described above has sufficient adhesion to a color filter (colored patterns of a plurality of colors), a black matrix BM (black layer), a glass substrate (transparent substrate), and the like, and a copper layer. Adhesiveness to the copper alloy layer is also sufficient. For this reason, when a copper alloy layer or a silver alloy layer is applied to a display device substrate using a composite oxide, a practical display device substrate can be realized.

  In addition, as the metal layer 20 used for the gate electrode and the gate wiring constituting the thin film transistor, a silver alloy in which 1.5 at% calcium is added to silver can be used. A three-layer structure in which the silver alloy layer is sandwiched between composite oxide layers containing indium oxide, zinc oxide, and tin oxide can be used.

  Copper, copper alloys, silver, silver alloys, or oxides and nitrides thereof generally do not have sufficient adhesion to a transparent substrate such as glass, a black matrix, or the like. Therefore, when the conductive metal oxide layer is not provided, peeling may occur at the interface between the touch sensing wiring and a transparent substrate such as glass, or at the interface between the touch sensing wiring and the black layer. When copper or copper alloy is used as the first touch sensing wiring 1 and the second touch sensing wiring 2 having a thin wiring pattern, a conductive metal oxide layer is not formed as a base layer of a metal layer (copper or copper alloy). In the display device substrate (counter substrate), in addition to defects due to peeling, defects due to electrostatic breakdown may occur in the touch sensing wiring during the manufacturing process of the display device substrate, which is not practical. Such electrostatic breakdown in the first touch sensing wiring 1 and the second touch sensing wiring 2 is a post-process such as stacking a color filter on a transparent substrate, a process of bonding the display device substrate and the array substrate, or a cleaning process. This is a phenomenon in which static electricity is accumulated in the wiring pattern due to, and the like, pattern breakage, disconnection, etc. are caused by electrostatic breakdown.

  Copper, copper alloy, silver or silver alloy has high electrical conductivity and is preferable as a wiring material. However, non-conductive copper oxide is formed over time on the surface of the copper alloy, and electrical contact may be difficult. Silver and silver alloys easily form sulfides and oxides. On the other hand, a stable ohmic contact can be realized by covering a copper alloy layer or a silver alloy layer with a composite oxide layer such as indium oxide, zinc oxide, antimony oxide, and tin oxide. In the case of using layers, electrical mounting such as transfer can be easily performed in a third embodiment described later.

  Examples of the layer structure composed of the first conductive metal oxide layer 21, the metal layer 20, and the second conductive metal oxide layer 22 applicable to the embodiment of the present invention include the following modifications. It is done. For example, ITO (Indium Tin Oxide) or IZTO (Indium Zinc Tin Oxide, where Z is zinc oxide) containing indium oxide as a central base material is conductive on a metal layer such as a copper alloy layer in a state where oxygen is insufficient. Layer structure obtained by forming a conductive metal oxide layer, or molybdenum oxide, tungsten oxide, mixed oxide of nickel oxide and copper oxide, titanium oxide, etc. on a metal layer such as aluminum alloy or copper alloy Examples thereof include a layer structure obtained by laminating these metal oxides. The three-layer structure in which the metal layer is sandwiched between the conductive metal oxide layers has an advantage that the film can be continuously formed by a vacuum film forming apparatus such as a sputtering apparatus.

  For example, from the viewpoint of collectively etching the silver alloy layer and the conductive metal oxide layer, a composite oxide containing zinc oxide or gallium oxide can be used for the conductive metal oxide layer sandwiching the silver alloy. Such a laminated structure of the silver alloy layer and the conductive metal oxide layer can be patterned by a single etching with one etchant by a known photolithography technique. For example, a composite oxide of indium oxide, gallium oxide, and antimony oxide can be used as a conductive metal oxide layer as a later-described organic EL light-reflective pixel electrode. A composite oxide of indium oxide, gallium oxide, and antimony oxide has a high work function. As an anode of an organic EL display device, a stacked structure of a composite oxide of indium oxide, gallium oxide, and antimony oxide and a silver alloy layer is suitable for a pixel electrode.

  The first conductive metal oxide layer 21 and the second conductive metal oxide layer 22 have a barrier property against copper and silver. In a structure in which a copper wiring or silver wiring is sandwiched between conductive metal oxides, deterioration of the active element due to migration of copper or silver can be suppressed, which is preferable as a highly conductive wiring for the active element.

(Black layer)
The first black layer 16 and the second black layer 36 function as a black matrix of the display device DSP1. The black layer is made of, for example, a colored resin in which a black color material is dispersed. Copper oxides and copper alloy oxides are difficult to obtain sufficient black color and low reflectance. For example, when the black layer is formed of a metal oxide, it has a light reflectance in the visible range of approximately 10% to 30%, and it appears to be colored with difficulty in obtaining a flat reflectance in the visible range. The visible light reflectance at the interface between the black layer and the substrate such as glass or the transparent resin layer according to the present embodiment is suppressed to about 3% or less, and high visibility is obtained. The transparent resin includes an adhesive layer for attaching a protective glass to the display device.

  As the black color material, carbon, carbon nanotube, carbon nanohorn, carbon nanobrush, or a mixture of a plurality of organic pigments can be applied. For example, carbon is used as a main color material at a ratio of 51% by mass or more with respect to the total amount of the black color material. In order to adjust the reflection color, an organic pigment such as blue or red can be added to the black color material. For example, the reproducibility of the black layer in the photolithography process can be improved by adjusting the concentration of carbon contained in the photosensitive black coating liquid that is the starting material (lowering the carbon concentration).

  Even when a large exposure apparatus which is a manufacturing apparatus of the display apparatus DSP1 is used, for example, a black layer having a pattern having a width (thin line) of 1 to 9 μm can be formed (patterning). In addition, the range of the carbon concentration in this embodiment is set in the range of 4 to 50% by mass with respect to the total solid content including the resin, the curing agent, and the pigment. Here, as the amount of carbon, the carbon concentration may exceed 50% by mass. However, when the carbon concentration exceeds 50% by mass with respect to the entire solid content, the suitability of the coating film tends to decrease. In addition, when the carbon concentration is set to less than 4% by mass, sufficient black color cannot be obtained, and reflected light generated in the underlying metal layer located under the black layer is greatly recognized, thereby reducing visibility. is there.

When exposure processing is performed in photolithography, which is a subsequent process, alignment between the substrate to be exposed and the mask is performed. At this time, priority is given to alignment, and for example, the optical density of the black layer by transmission measurement can be made 2 or less. In addition to carbon, a black layer may be formed using a mixture of a plurality of organic pigments as a black color adjustment. Considering the refractive index (about 1.5) of the base material such as glass or transparent resin, the reflectance of the black layer is such that the reflectance at the interface between the black layer and the base material is 3% or less. Is set. In this case, it is desirable to adjust the content and type of the black color material, the resin used for the color material, and the film thickness. By optimizing these conditions, the reflectance at the interface between the black layer having a refractive index of approximately 1.5 and the black layer is set to 3% or less in the visible wavelength range. And low reflectivity can be realized. In consideration of the need to prevent the reflected light caused by the light emitted from the backlight unit from being reflected again, or in consideration of improving the visibility of the observer P, the reflectance of the black layer is It is desirable to make it 3% or less.
In general, the refractive index of the acrylic resin used for the color filter and the liquid crystal material is approximately in the range of 1.5 to 1.7.
The black layer may be formed not only on one side in contact with the conductive layer (surface close to the observer P) but also in a position close to the surface in contact with the liquid crystal layer 300.
In other words, the touch sensing wiring according to the present embodiment may have a five-layer structure of “black layer / conductive metal oxide layer / silver alloy layer / conductive metal oxide layer / black layer”. Here, the silver alloy layer can be replaced with silver, copper, or a copper alloy.
When the active element included in the array substrate has sensitivity in the visible light region, reflected light from the back surface of the conductive layer may enter the active element and cause the active element to malfunction. By disposing the black layer together with the opposite side (back surface of the conductive layer) close to the display function layer, it is possible to prevent malfunction of the active element due to incidence of reflected light.

(Liquid crystal layer 300)
In the first embodiment, the display functional layer of the present invention is the liquid crystal layer 300, which includes liquid crystal molecules having positive dielectric anisotropy. The initial alignment of the liquid crystal molecules is horizontal to the substrate surface of the counter substrate 100 or the array substrate 200. In the liquid crystal driving according to the first embodiment using the liquid crystal layer 300, a driving voltage is applied to the liquid crystal molecules so as to cross the liquid crystal layer in a plan view, and therefore a lateral electric field called FFS (Fringe Field Switching). The liquid crystal is driven by. The dielectric anisotropy of the liquid crystal molecules of the liquid crystal layer 300 may be positive or negative. When the liquid crystal molecules of the liquid crystal layer 300 have negative dielectric anisotropy, for example, the pointer is not easily affected by the charge of the pointer when the pointer such as a finger contacts or approaches the counter substrate. For this reason, a negative liquid crystal is desirable. In other words, when the liquid crystal molecules have a negative dielectric anisotropy, the liquid crystal molecules are unlikely to rise in the thickness direction of the liquid crystal layer and cause light leakage due to the influence of the charge when the pointer approaches the counter substrate. .

(Structure of array substrate 200)
Next, the structure of the array substrate 200 constituting the display device DSP1 will be described. FIG. 9 is a plan view partially showing the array substrate 200 included in the display device DSP1 according to the first embodiment of the present invention. FIG. 10 is a cross-sectional view partially showing the array substrate 200 included in the display device DSP1 according to the first embodiment of the present invention, and is a cross-sectional view taken along the line CC ′ shown in FIG. FIG. 10 shows an example of a thin film transistor (TFT) having a top gate structure. In FIG. 10, the pixel electrode 29, the contact hole CH, and the common electrode 17 located above the pixel electrode 29, which are not illustrated in the cross section along the line CC ′ in FIG. 9, are indicated by broken lines. Note that the contact hole CH electrically connects the pixel electrode 29 and the drain electrode 26 formed on the second insulating layer 12 as shown in FIG.

  As shown in FIGS. 2, 9, and 10, the array substrate 200 includes a transparent substrate 41 (second transparent substrate), a fourth insulating layer 14 formed so as to cover the surface of the transparent substrate 41, The first source wiring 31 and the second source wiring 32 formed on the fourth insulating layer 14, and the third insulation formed on the fourth insulating layer 14 so as to cover the first source wiring 31 and the second source wiring 32. Layer 13, first gate line 10 and second gate line 9 formed on third insulating layer 13, common line 30 formed on third insulating layer 13, first gate line 10 and second gate The second insulating layer 12 formed on the third insulating layer 13 so as to cover the wiring 9 and the common wiring 30, the pixel electrode 29 formed on the second insulating layer 12, and the pixel electrode 29 so as to be covered A first insulating layer 11 formed on the second insulating layer 12 and a first insulating layer; And a common electrode 17 formed on the 11. The common wiring 30 is connected to the common electrode 17 through the through hole 29s and the contact holes 11H and 12H shown in FIG.

(Active element 28)
As shown in FIG. 10, the active element 28 includes a channel layer 27, a drain electrode 26 connected to one end of the channel layer 27 (first end, the left end of the channel layer 27 in FIG. 10), A source electrode 24 connected to an end (second end, the right end of the channel layer 27 in FIG. 10) and a gate electrode 25 disposed to face the channel layer 27 with the third insulating layer 13 interposed therebetween. FIG. 10 shows a structure in which the channel layer 27, the drain electrode 26, and the source electrode 24 constituting the active element 28 are formed on the fourth insulating layer 14, but the present invention is limited to such a structure. Not. The active element 28 may be formed directly on the transparent substrate 41 without providing the fourth insulating layer 14. Also. A bottom-gate thin film transistor may be used.
Video signals are frequently supplied to the first source line 31 and the second source line 32, and noise is likely to be generated from the first source line 31 and the second source line 32. The top gate structure has an advantage that the first source wiring 31 and the second source wiring 32 which are noise generation sources can be separated from the touch sensing wiring described above.
The source electrode 24 and the drain electrode 26 shown in FIG. 10 are formed of conductive layers having the same structure in the same process. In the first embodiment, as the structure of the source electrode 24 and the drain electrode 26, a three-layer structure such as titanium / aluminum alloy / titanium or molybdenum / aluminum alloy / molybdenum is adopted. Here, the aluminum alloy is an aluminum-neodymium alloy.
The third insulating layer 13 located below the gate electrode 25 may be an insulating layer having the same width as the gate electrode 25. In this case, for example, dry etching using the gate electrode 25 as a mask is performed, and the third insulating layer 13 around the gate electrode 25 is removed. As a result, an insulating layer having the same width as the gate electrode 25 can be formed. A technique for processing an insulating layer by dry etching using the gate electrode 25 as a mask is generally called self-alignment.

Driving an organic EL or LED using a thin film transistor including a channel layer formed of an oxide semiconductor is preferable to driving using a thin film transistor including a channel layer formed of a polysilicon semiconductor.
For example, oxide semiconductors called IGZO are collectively formed by vacuum film formation such as sputtering. After the oxide semiconductor is formed, heat treatment after forming a pattern such as a TFT is also performed in a lump. For this reason, variation in electrical characteristics (for example, Vth) related to the channel layer is extremely small. In order to suppress variations in luminance when driving an organic EL or LED, it is necessary to suppress variations in Vth of the thin film transistor within a small range.

  On the other hand, in a thin film transistor having a channel layer formed of a polysilicon semiconductor, it is necessary to perform laser annealing of amorphous silicon, which is a precursor of the thin film transistor, to each of the transistors. Will be invited. From this viewpoint, the thin film transistor used in the display device including the organic EL or LED is preferably a thin film transistor including a channel layer formed of an oxide semiconductor.

  In addition, a thin film transistor including a channel layer formed using an oxide semiconductor has extremely low leakage current, and thus has high stability after a scan signal or a video signal is input. A thin film transistor including a channel layer formed of a polysilicon semiconductor has a leakage current larger by two digits or more than an oxide semiconductor transistor. It is preferable that this leakage current is small because it leads to highly accurate touch sensing.

  As a material of the channel layer 27, for example, an oxide semiconductor called IGZO can be used. The oxide semiconductor material constituting the channel layer 27 includes a metal oxide containing at least one selected from the group consisting of gallium, indium, zinc, tin, aluminum, germanium, and cerium, and at least antimony and A material containing any one of bismuth and a metal oxide can be used.

  In this embodiment, an oxide semiconductor containing indium oxide, gallium oxide, and zinc oxide is used. The material of the channel layer 27 formed of an oxide semiconductor may be any of single crystal, polycrystal, microcrystal, a mixture of microcrystal and amorphous, or amorphous. The film thickness of the oxide semiconductor can be a film thickness in the range of 2 nm to 50 nm. The channel layer 27 may be formed of a polysilicon semiconductor.

  Furthermore, a structure in which two thin film transistors are stacked may be employed. In this case, a thin film transistor including a channel layer formed of a polysilicon semiconductor is used as a thin film transistor located in a lower layer. A thin film transistor including a channel layer formed using an oxide semiconductor is used as a thin film transistor positioned in an upper layer. In such a structure in which two thin film transistors are stacked, the thin film transistors are arranged in a matrix in a plan view. In this structure, high mobility is obtained by the polysilicon semiconductor, and low leakage current can be realized by the oxide semiconductor. That is, both the merit of the polysilicon semiconductor and the merit of the oxide semiconductor can be utilized together.

An oxide semiconductor or a polysilicon semiconductor can be used, for example, in the configuration of a complementary transistor having a p / n junction, or can be used in the configuration of a single channel transistor having only an n-type junction. As the stacked structure of oxide semiconductors, for example, a stacked structure in which an n-type oxide semiconductor and an n-type oxide semiconductor having different electrical characteristics from the n-type oxide semiconductor may be used. The n-type oxide semiconductor to be stacked may include a plurality of layers. In the stacked n-type oxide semiconductor, the band gap of the underlying n-type semiconductor can be different from the band gap of the n-type semiconductor located in the upper layer.
For example, a configuration in which the upper surface of the channel layer is covered with a different oxide semiconductor may be employed.
Alternatively, for example, a stacked structure in which a microcrystalline (close to amorphous) oxide semiconductor is stacked over a crystalline n-type oxide semiconductor may be employed. Here, the microcrystal refers to a microcrystalline oxide semiconductor film obtained by heat-treating an amorphous oxide semiconductor formed with a sputtering apparatus in a range of 180 ° C. to 450 ° C., for example. Alternatively, it refers to a microcrystalline oxide semiconductor film formed with the substrate temperature at the time of film formation set to around 200 ° C. The microcrystalline oxide semiconductor film is an oxide semiconductor film in which crystal grains of at least about 1 nm to about 3 nm or larger than 3 nm can be observed by an observation method such as TEM.
An oxide semiconductor can be improved in carrier mobility and reliability by being changed from amorphous to crystalline. The melting point as an oxide of indium oxide or gallium oxide is high. Antimony oxide and bismuth oxide have melting points of 1000 ° C. or lower, and oxides have low melting points. For example, when a ternary composite oxide of indium oxide, gallium oxide, and antimony oxide is employed, the crystallization temperature of the composite oxide can be lowered due to the effect of antimony oxide having a low melting point. In other words, an oxide semiconductor that can be easily crystallized from an amorphous state to a microcrystalline state can be provided. An oxide semiconductor can improve carrier mobility by increasing its crystallinity.

As an oxide semiconductor, zinc oxide, gallium oxide, or antimony oxide-rich composite oxide can be used because it is required to be easily soluble in wet etching in a later step. For example, the atomic ratio of the metal element of the target used for sputtering is In: Ga: Zn = 1: 2: 2, In: Ga: Zn = 1: 3: 3, In: Ga: Zn = 2: 1: 1. Or, In: Ga: Zn = 1: 1: 1 can be exemplified. Here, Zn can be replaced with, for example, Sb (antimony) or Bi (bismuth).
For example, a binary composite oxide of indium oxide and antimony oxide may be used at an atomic ratio of In: Sb = 1: 1. For example, a binary composite oxide of indium oxide and bismuth oxide may be used at an atomic ratio of In: Bi = 1: 1.
Further, in the atomic ratio, the In content may be further increased.
Note that the composition of the composite oxide is not limited to the above composition.

  For example, Sn may be added to the above complex oxide. In this case, In₂O₃, Ga₂O₃, Sb₂O₃, And SnO₂Or a composite oxide containing a quaternary composition containing₂O₃, Sb₂O₃, And SnO₂Thus, a composite oxide containing a ternary composition containing can be obtained, and the carrier concentration can be adjusted. In₂O₃, Ga₂O₃, Sb₂O ₃, Bi₂O₃SnO with different valence₂Plays the role of a carrier dopant.
  For example, sputtering film formation is performed using a target obtained by adding tin oxide to a ternary metal oxide containing indium oxide, gallium oxide, and antimony oxide. Thereby, a composite oxide with an improved carrier concentration can be formed. Similarly, for example, by performing sputtering film formation using a target obtained by adding tin oxide to a ternary metal oxide of indium oxide, gallium oxide, and bismuth oxide, a composite oxide with improved carrier concentration can be obtained. A film can be formed.

However, if the carrier concentration becomes too high, the threshold value Vth of a transistor having a channel layer formed of a complex oxide tends to be negative (it is likely to be normally on). For this reason, it is desirable to adjust the amount of tin oxide added so that the carrier concentration is less than 1 × 10 ¹⁸ cm ⁻³ . Regarding the carrier concentration and carrier mobility, the film formation conditions of the composite oxide (oxygen gas used for the introduced gas, substrate temperature, film formation rate, etc.), the annealing conditions after film formation, and the composition of the composite oxide By adjusting the above, a desired carrier concentration and carrier mobility can be obtained. For example, increasing the composition ratio of indium oxide tends to improve carrier mobility. For example, crystallization of the composite oxide can be promoted by an annealing process in which heat treatment is performed at a temperature of 250 ° C. to 700 ° C., and carrier mobility of the composite oxide can be improved.

  Furthermore, a thin film transistor (active element) having a channel layer formed of an n-type oxide semiconductor and a thin film transistor (active element) having a channel layer formed of an n-type silicon semiconductor are disposed one by one in the same pixel, A light emitting layer such as an LED or an organic EL (OLED) can be driven so as to make use of the characteristics of each channel layer of the thin film transistor. When a liquid crystal layer or an organic EL (OLED) is used as the display function layer, an n-type polysilicon thin film transistor is adopted as a driving transistor for applying a voltage (current) to the light emitting layer, and a switching transistor for sending a signal to the polysilicone thin film transistor An n-type oxide semiconductor thin film transistor can be employed.

  The drain electrode 26 and the source electrode 24 (source wirings 31 and 32) can adopt the same structure. For example, a multilayer conductive layer can be used for the drain electrode 26 and the source electrode 24. For example, an electrode structure in which aluminum, copper, or an alloy layer thereof is sandwiched between molybdenum, titanium, tantalum, tungsten, a conductive metal oxide layer, or the like can be employed. On the fourth insulating layer 14, the drain electrode 26 and the source electrode 24 may be formed first, and the channel layer 27 may be formed so as to be stacked on these two electrodes. The structure of the transistor may be a multi-gate structure such as a double gate structure. Alternatively, the transistor structure in the array substrate may be a dual gate structure in which electrodes are arranged above and below the channel layer.

  The semiconductor layer or the channel layer may be adjusted in mobility and electron concentration in the thickness direction. The semiconductor layer or the channel layer may have a stacked structure in which different oxide semiconductors are stacked. The channel length of the transistor determined by the minimum distance between the source electrode and the drain electrode can be 10 nm to 10 μm, for example, 20 nm to 0.5 μm.

  The third insulating layer 13 functions as a gate insulating layer. Such insulating layer materials include hafnium silicate (HfSiOx), silicon oxide, aluminum oxide, silicon nitride, silicon oxynitride, aluminum oxynitride, zirconium oxide, gallium oxide, zinc oxide, hafnium oxide, cerium oxide, lanthanum oxide, Or the insulating layer etc. which were obtained by mixing these materials are employ | adopted. Cerium oxide has a high dielectric constant and a strong bond between cerium and oxygen atoms. For this reason, it is preferable that the gate insulating layer be a composite oxide containing cerium oxide. Even when cerium oxide is employed as one of the oxides constituting the composite oxide, it is easy to maintain a high dielectric constant even in an amorphous state. Cerium oxide has an oxidizing power. Cerium oxide is capable of storing and releasing oxygen. Therefore, a structure in which an oxide semiconductor and cerium oxide are in contact with each other can supply oxygen from the cerium oxide to the oxide semiconductor, avoid oxygen vacancies in the oxide semiconductor, and provide a stable oxide semiconductor (channel layer). Can be realized. The structure using nitride for the gate insulating layer does not exhibit the above-described action. The material of the gate insulating layer may include a lanthanoid metal silicate represented by cerium silicate (CeSiOx). Alternatively, lanthanum cerium composite oxide, and further lanthanum cerium silicate may be included.

  The structure of the third insulating layer 13 may be a single layer film, a mixed film, or a multilayer film. In the case of a mixed film or multilayer film, the mixed film or multilayer film can be formed of a material selected from the above insulating layer materials. The film thickness of the third insulating layer 13 is a film thickness that can be selected from a range of 2 nm to 300 nm, for example. In the case where the channel layer 27 is formed using an oxide semiconductor, the interface of the third insulating layer 13 in contact with the channel layer 27 can be formed in a state where a large amount of oxygen is contained (film formation atmosphere).

  In a thin film transistor manufacturing process, in a thin film transistor having a top gate structure, a gate insulating layer containing cerium oxide can be formed in an introduced gas containing oxygen after an oxide semiconductor is formed. At this time, the surface of the oxide semiconductor located under the gate insulating layer can be oxidized, and the degree of oxidation of the surface can be adjusted. In a thin film transistor having a bottom gate structure, it is difficult to adjust the degree of oxidation of the surface of the oxide semiconductor because the formation process of the gate insulating layer is performed before the oxide semiconductor process. In a thin film transistor having a top gate structure, oxidation of the surface of the oxide semiconductor can be promoted more than in the bottom gate structure, and oxygen vacancies in the oxide semiconductor are less likely to occur.

  The plurality of insulating layers including the first insulating layer 11, the second insulating layer 12, the third insulating layer 13, and the insulating layer (fourth insulating layer 14) underlying the oxide semiconductor are formed using an inorganic insulating material or an organic insulating material. Can be formed. As a material of the insulating layer, silicon oxide, silicon oxynitride, and aluminum oxide can be used. As a structure of the insulating layer, a single layer or a plurality of layers including the above materials can be used. A configuration in which a plurality of layers formed of different insulating materials are stacked may be employed. In order to obtain the effect of planarizing the upper surface of the insulating layer, an acrylic resin, a polyimide resin, a benzocyclobutene resin, a polyamide resin, or the like may be used for some of the insulating layers. A low dielectric constant material (low-k material) can also be used.

  A gate electrode 25 is disposed on the channel layer 27 via the third insulating layer 13. The gate electrode 25 (gate wiring 10) can be formed in the same process using the same material as the common electrode 17 and the common wiring 30 so as to have the same layer structure. Further, the gate electrode 25 may be formed using the same material as the drain electrode 26 and the source electrode 24 described above so as to have the same layer structure. As the structure of the gate electrode 25, a configuration in which a copper layer or a copper alloy layer is sandwiched between conductive metal oxides, or a configuration in which silver or a silver alloy is sandwiched between conductive metal oxides can be employed.

  The surface of the metal layer 20 exposed at the end of the gate electrode 25 can be covered with a complex oxide containing indium. Alternatively, the entire gate electrode 25 may be covered with a nitride such as silicon nitride or molybdenum nitride so as to include the end (cross section) of the gate electrode 25. Alternatively, an insulating film having the same composition as the gate insulating layer described above may be stacked with a thickness greater than 50 nm.

As a method of forming the gate electrode 25, prior to the formation of the gate electrode 25, only the third insulating layer 13 positioned immediately above the channel layer 27 of the active element 28 is subjected to dry etching or the like, so that the thickness of the third insulating layer 13 is increased. Can also be made thinner.
Oxide semiconductors having different electrical properties may be further inserted at the interface of the gate electrode 25 in contact with the third insulating layer 13. Alternatively, the third insulating layer 13 may be formed of an insulating metal oxide layer containing cerium oxide or gallium oxide.

  Specifically, it is necessary to increase the thickness of the third insulating layer 13 in order to prevent noise caused by the video signal supplied to the source wiring 31 from getting on the common wiring 30. On the other hand, the third insulating layer 13 has a function as a gate insulating film located between the gate electrode 25 and the channel layer 27, and requires an appropriate film thickness considering the switching characteristics of the active element 28. Is done. In order to realize the two contradictory functions as described above, the third insulation positioned immediately above the channel layer 27 while keeping the film thickness of the third insulation layer 13 between the common wiring 30 and the source wiring 31 large. By reducing the thickness of the layer 13, noise caused by the video signal supplied to the source wiring can be prevented from entering the common wiring 30, and desired switching characteristics can be realized in the active element 28. Can do.

Further, a light shielding film may be formed below the channel layer 27. As a material for the light shielding film, a refractory metal such as molybdenum, tungsten, titanium, or chromium can be used.
The gate wiring 10 is electrically linked to the active element 28. Specifically, the gate electrode 25 connected to the gate wiring 10 and the channel layer 27 of the active element 28 face each other with the third insulating layer 13 interposed therebetween. Switching driving is performed in the active element 28 in accordance with the scanning signal supplied from the video signal control unit 121 to the gate electrode 25.

  A voltage as a video signal is applied to the source wirings 31 and 32 from the video signal control unit 121. For example, a video signal having a positive or negative voltage of ± 2.5 V to ± 5 V is applied to the source wirings 31 and 32. The voltage applied to the common electrode 17 can be, for example, a range of ± 2.5 V that changes every frame inversion. Further, the potential of the common electrode 17 may be a constant potential in a range from the liquid crystal driving threshold value Vth to 0V. When this common electrode is applied to constant potential driving described later, it is desirable to use an oxide semiconductor for the channel layer 27. The channel layer composed of an oxide semiconductor has a high electric withstand voltage, and a transistor using an oxide semiconductor applies a high drive voltage exceeding the range of ± 5 V to the electrode section, thereby accelerating the response of the liquid crystal. Is possible. Various driving methods such as frame inversion driving, column inversion (vertical line) inversion driving, horizontal line inversion driving, and dot inversion driving can be applied to the liquid crystal driving.

In the case where a copper alloy is employed as a part of the structure of the gate electrode 25, a metal element or a metalloid element in a range of 0.1 at% or more and 4 at% or less can be added to copper. Thus, the effect that copper migration can be suppressed is obtained by adding an element to copper. In particular, elements that can be placed at the lattice position of copper by substituting a part of copper atoms in the crystal of the copper layer (grains), and the movement of copper atoms in the vicinity of the copper grains precipitated at the grain boundaries of the copper layer It is preferable to add to the copper together with an element that suppresses the above. Alternatively, in order to suppress the movement of the copper atom, it is preferable to add an element heavier than the copper atom (having a larger atomic weight) to the copper. In addition, it is preferable to select an additive element in which the conductivity of copper is less likely to decrease with an addition amount within a range of 0.1 at% to 4 at% with respect to copper. Furthermore, in consideration of vacuum film formation such as sputtering, an element having a film formation rate such as sputtering close to copper is preferable. As described above, the technique of adding an element to copper can also be applied when copper is replaced with silver or aluminum. In other words, a silver alloy or an aluminum alloy may be used instead of the copper alloy.
Adding an element that can be placed in the copper lattice position to replace a part of the copper atoms in the crystal (grain) of the copper layer means that, in other words, a metal or metalloid that forms a solid solution with copper near room temperature. It is to be added to copper. Examples of the metal that easily forms a solid solution with copper include manganese, nickel, zinc, palladium, gallium, and gold (Au). Adding an element to copper that precipitates at the grain boundary of the copper layer and suppresses the movement of copper atoms in the vicinity of the copper grain is, in other words, adding a metal or metalloid that does not form a solid solution with copper near room temperature. That is. There are various materials for metals and metalloids that do not form a solid solution with copper or that do not easily form a solid solution with copper. For example, refractory metals such as titanium, zirconium, molybdenum, and tungsten, and elements called semimetals such as silicon, germanium, antimony, and bismuth can be used. The alloy element can be used as an additive element added to the silver alloy.

  Copper and silver have a problem in reliability from the viewpoint of migration. Reliability can be supplemented by adding the above metals and metalloids to copper. The effect of suppressing migration can be obtained by adding 0.1 at% or more of the above metal or metalloid to copper or silver. However, when the above metal or metalloid is added at a content exceeding 4 at% with respect to copper or silver, the conductivity of copper or silver is significantly deteriorated, and the merit of selecting a copper alloy or silver alloy is obtained. Absent.

In the first embodiment and other embodiments described later, the cross-sectional view of the display device and the common electrode 17 for driving the display functional layer can be disposed above the position where the pixel electrode is disposed. In other words, active elements and TFT wirings can be arranged below the common electrode 17 in a cross-sectional view of these display devices. That is, the common electrode 17 is provided closer to the counter substrate 100 than the pixel electrode 29. Such a configuration is hereinafter referred to as a pixel electrode lower configuration.
In the lower structure of the pixel electrode, the common electrode 17 can be grounded via a resistor. For example, the common potential can be set to a constant potential of 0 V (volt). As will be described below, when the display function layer is a liquid crystal layer, the lower structure of the pixel electrode has a great merit.

(Driving the liquid crystal layer in the lower structure of the pixel electrode)
In the lower structure of the pixel electrode, since the common potential does not substantially change, the potential of the source wiring to which the video signal is supplied is changed. When the display function layer is a liquid crystal layer, the voltage applied to the source wiring is switched between positive and negative polarities. The source wiring according to the present embodiment is classified into a first source wiring 31 having a negative polarity and a second source wiring 32 having a positive polarity.

  With reference to FIG. 11 and FIG. 12, a liquid crystal driving method by gate inversion driving, specifically column inversion driving and dot inversion driving by the gate wirings 9, 10 and source wirings 31, 32 will be described. FIG. 11 is a circuit diagram partially showing the display device DSP1 according to the first embodiment of the present invention, and shows the state of the liquid crystal driving voltage in each pixel when the liquid crystal display device is driven by column inversion driving. It is explanatory drawing. FIG. 12 is a circuit diagram partially showing the display device DSP1 according to the first embodiment of the present invention, and shows the state of the liquid crystal driving voltage in each pixel when the liquid crystal display device is driven by dot inversion driving. It is explanatory drawing.

  In the present embodiment, as described above, the potential of the second source wiring 32 has a positive polarity, the first source wiring 31 has a negative polarity, and pixel inversion driving is performed in each pixel. The gate wiring selected at the time of inversion driving may be frame inversion for selecting the gate wiring on the entire display screen, or half of the total number of lines may be selected for inversion driving. Further, inversion driving for sequentially selecting horizontal lines or inversion driving by intermittently selecting horizontal lines may be performed.

  FIG. 11 shows the polarity for each pixel when, for example, an even-numbered gate wiring is selected from a plurality of gate wirings (a plurality of lines) and the selected gate wiring sends a gate signal to the active element. . Here, the polarity of the second source line 32 is positive, and the polarity of the first source line 31 is negative. In this case, pixels having the same polarity are arranged in the vertical direction (Y direction). For example, when an odd-numbered gate wiring is selected in the next frame, and the selected gate wiring sends a gate signal to the active element, pixels having a polarity opposite to that shown in FIG. The vertical line inversion drive is performed. In the case of inverting the vertical line for each frame, the frequency of noise generation is lower and the influence on touch sensing is reduced.

  In FIG. 11, the first source line 31, the second source line 32, and the first gate line 10 are electrically connected to the first active element 28a, and the first source line 31, the second source line 32, and the second gate line 10 are electrically connected. The gate wiring 9 is electrically connected to the second active element 28b. Since the first source wiring 31 has a negative polarity and the second source wiring 32 has a positive polarity, the polarity of the pixel is determined by selecting the first gate wiring 10 or the second gate wiring 9.

  In FIG. 12, for example, every two gate wirings (a plurality of lines) and a set of two gate wirings 9 and 10 are selected, and the selected gate wirings 9 and 10 become active elements. The polarities for each pixel when a gate signal is sent are shown. Here, the polarity of the second source line 32 is positive, and the polarity of the first source line 31 is negative. In this case, pixels having positive and negative polarities are alternately arranged in both the vertical direction and the horizontal direction. In the next frame, a different set of two gate wirings is selected, and the selected gate wirings 9 and 10 send gate signals to the active elements, so that pixels having the opposite polarity to those shown in FIG. Similarly, they are alternately arranged and dot inversion driving is performed. The inversion driving in the pixels shown in FIGS. 11 and 12 can be similarly performed in the following embodiments. In the first embodiment and the second embodiment to be described later, normal frame inversion driving for inverting the common voltage to positive and negative may be performed.

The positive voltage in the present embodiment is, for example, 0 V to +5 V, and the negative voltage is 0 V to −5 V. Note that in the case where the channel layer 27 is formed using an oxide semiconductor (for example, a composite oxide semiconductor of indium, gallium, and zinc called IGZO), such an oxide semiconductor has a high electrical breakdown voltage. A higher voltage than the above can be used.
In the present invention, the positive voltage and the negative voltage are not limited to the above voltages. For example, the positive voltage may be changed from 0V to + 2.5V, and the negative voltage may be changed from 0V to -2.5V. That is, the upper limit of the positive voltage may be set to + 2.5V, and the lower limit of the negative voltage may be set to −2.5V. In this case, an effect of reducing power consumption, an effect of reducing generation of noise, or an effect of suppressing burn-in of the liquid crystal display can be obtained.

  For example, when a transistor (active element) using IGZO with good memory characteristics is adopted as the channel layer 27, an auxiliary capacitance (storage) necessary for constant voltage driving when the common electrode 17 is set to a constant voltage (constant potential). It is also possible to omit the capacitor. Unlike a transistor using a silicon semiconductor, a transistor using IGZO as the channel layer 27 has a very small leakage current. Therefore, for example, a transfer circuit including a latch unit as described in Patent Document 4 of the prior art document is used. This can be omitted and a simple wiring structure can be obtained. In addition, in the display device DSP1 using the array substrate 200 including a transistor using an oxide semiconductor such as IGZO as a channel layer, since the leakage current of the transistor is small, the voltage is applied after applying the liquid crystal driving voltage to the pixel electrode 29. And the transmittance of the liquid crystal layer 300 can be maintained.

  When an oxide semiconductor such as IGZO is used for the channel layer 27, the electron mobility in the active element 28 is high. For example, a driving voltage corresponding to a required video signal can be applied to the pixel in a short time of 2 msec (milliseconds) or less. It can be applied to the electrode 29. For example, one frame of double speed driving (when the number of display frames per second is 120 frames) is about 8.3 msec, and for example, 6 msec can be assigned to touch sensing.

  When the common electrode 17 having the transparent electrode pattern is at a constant potential, the liquid crystal drive and the touch electrode drive need not be time-division driven. The driving frequency of the liquid crystal and the driving frequency of the touch metal wiring can be made different. For example, in the active element 28 (including the first active element 28a and the second active element 28b) using an oxide semiconductor such as IGZO for the channel layer 27, the transmittance is maintained after the liquid crystal driving voltage is applied to the pixel electrode 29. Unlike a transistor using a polysilicon semiconductor that requires (or voltage holding), it is not necessary to refresh the image (write a video signal again) in order to maintain the transmittance. Therefore, the display device DSP1 employing an oxide semiconductor such as IGZO can be driven with low power consumption.

  Since an oxide semiconductor such as IGZO has a high electric withstand voltage, the liquid crystal can be driven at a high speed with a higher voltage and can be used for 3D video display capable of 3D display. Since the active element 28 using an oxide semiconductor such as IGZO for the channel layer 27 has high memory properties as described above, flicker (flickering of display) can be achieved even when the liquid crystal driving frequency is set to a low frequency of about 0.1 Hz to about 30 Hz. ). By using the active element 28 with IGZO as a channel layer, dot inversion driving at a low frequency and touch driving at a frequency different from the dot inversion driving are performed together, thereby displaying a high-quality image with low power consumption. And high-accuracy touch sensing.

  Further, since the active element 28 using the oxide semiconductor for the channel layer 27 has a small leakage current as described above, the driving voltage applied to the pixel electrode 29 can be held for a long time. Touch sensing scanning is achieved by forming the source wirings 31 and 32 of the active element 28 and the gate wirings 9 and 10 with copper wiring having a wiring resistance smaller than that of the aluminum wiring, and using IGZO that can be driven in a short time as the active element. It is possible to provide a sufficient period for performing the above. That is, by applying an oxide semiconductor such as IGZO to the active element, the driving time of the liquid crystal or the like can be shortened, and there is a sufficient margin for the time applied to touch sensing in the video signal processing of the entire display screen. it can. This makes it possible to detect the change in capacitance that occurs with high accuracy.

Further, by employing an oxide semiconductor such as IGZO as the channel layer 27, it is possible to substantially eliminate the influence of coupling noise in dot inversion driving and column inversion driving. In the active element 28 using an oxide semiconductor, a voltage corresponding to a video signal can be applied to the pixel electrode 29 in a very short time (for example, 2 msec), and the pixel voltage after the video signal is applied. Is highly memory-friendly, and no new noise is generated during the retention period using the memory property, thereby reducing the influence on touch sensing.
As the oxide semiconductor, an oxide semiconductor containing two or more metal oxides of indium, gallium, zinc, tin, aluminum, germanium, antimony, bismuth, and cerium can be used.

(Second Embodiment)
The second embodiment of the present invention will be described below with reference to the drawings.
In the second embodiment, the same members as those in the first embodiment are denoted by the same reference numerals, and the description thereof is omitted or simplified.
FIG. 13 is a view partially showing the display device DSP2 according to the second embodiment of the present invention, and is a cross-sectional view taken along the line DD 'in FIG.
FIG. 14 is a diagram partially showing a liquid crystal layer 506 provided in the display device according to the second embodiment of the present invention and a frame portion F of the counter substrate 350, and a cross section taken along the line AA ′ in FIG. 16. FIG.
FIG. 15 is a diagram showing a second touch sensing wiring provided on the counter substrate according to the second embodiment of the present invention, and is an enlarged cross-sectional view showing a portion indicated by a symbol W2 in FIG.
FIG. 16 is a diagram illustrating a counter substrate included in the display device according to the second embodiment of the present invention, and is a plan view of the display device viewed from the observer side.
In FIGS. 13 to 16, illustration of a polarizing plate, a retardation plate, and a backlight unit is omitted.

As shown in FIG. 14, the conduction to the first touch sensing wiring 1 is indicated by a broken line as an example performed by the flexible printed circuit board FPC. For example, an anisotropic conductive film 101 is used for connection between the first touch sensing wiring 1 and the flexible printed circuit board FPC.
The display function layer included in the display device DSP2 according to the second embodiment is a vertically aligned liquid crystal layer 506, and is driven by a vertical electric field called VA (Vertical Alignment).
In the present embodiment, the touch sensing control unit 122 uses the first touch sensing wiring 1 and the second touch sensing wiring 2 at the intersection of the first touch sensing wiring 1 and the second touch sensing wiring 2 as touch signals. A change in the capacitance C2 is detected.

  The counter substrate 350 constituting the display device DSP2 of the second embodiment includes a transparent substrate 42 having a first surface MF and a second surface MS opposite to the first surface MF. A plurality of first touch sensing wires 1 are provided on the second surface MS. A plurality of second touch sensing wires 2 are provided on the first surface MF. The plurality of second touch sensing wires 2 and the first surface MF are covered with a color filter 60. Further, a second transparent resin layer 105 is provided on the color filter 60, and a common electrode 50 is provided on the second transparent resin layer 105.

  Specifically, in FIG. 14, a light-shielding frame portion F is configured by a part of the first touch sensing wiring 1 and the second light-shielding conductive pattern F <b> 22 with the same configuration as in FIG. 6. As shown in FIG. 14, a peripheral circuit 80 related to liquid crystal driving is formed in the frame portion 200 </ b> F of the array substrate 200 located below the frame portion F. In the peripheral circuit 80, for example, TFTs that drive active elements of the array substrate 200, capacitive elements, resistance elements, and the like are arranged on the surface of the frame portion 200F of the array substrate 200. Although not shown, the second light-shielding conductive pattern F22 is subdivided so as not to generate a large parasitic capacitance. The influence of noise from the peripheral circuit 80 on the touch sensing is reduced at the frame portion F including the overlapping portion 3 formed by overlapping the part of the first touch sensing wiring 1 and the second light shielding conductive pattern F22. . The conductive frame portion F reduces the influence of electrostatic noise from the outside (hand, finger, etc.) of the display device DSP2, and prevents malfunction.

In the second embodiment, as described above, the liquid crystal layer 506 is driven by liquid crystal driving of a vertical electric field. As shown in FIGS. 13 and 14, the common electrode 50 is disposed above the pixel electrode 59. The common electrode 50 is provided closer to the counter substrate 350 than the pixel electrode 59. That is, the liquid crystal layer 506 is sandwiched between the common electrode 50 and the pixel electrode 59. The cell gap (thickness) of the liquid crystal layer 506 is controlled by a spacer.
In the present embodiment, the liquid crystal layer 506 that is a display function layer can be driven by the pixel electrode lower structure shown in the first embodiment.

  Specifically, the common electrode 50 can be grounded via a high resistance to a ground potential of 0 V, the source wiring can be fixed to a positive or negative polarity, and liquid crystal driving with less noise can be performed. The drive of the display function layer in the lower structure of the pixel electrode can largely suppress the influence of noise on the touch sensing drive and reduce the power consumption related to the liquid crystal drive. Furthermore, the grounded common electrode 50 also serves as a shield layer for electrical noise and contributes to improved touch sensing accuracy.

  Similar to the first embodiment, the active elements are formed on the array substrate 200. The channel layer of the active element is formed of an oxide semiconductor. As the oxide semiconductor, an oxide semiconductor containing two or more metal oxides of gallium, indium, zinc, tin, aluminum, germanium, antimony, bismuth, and cerium can be used. The gate insulating film can be a gate insulating film formed of a complex oxide containing cerium oxide. For example, a top gate active element (TFT) shown in FIG. 10 can be employed as the active element structure.

  As shown in FIG. 16, the display device DSP <b> 2 includes a color filter 60. A pixel is formed by the first touch sensing wiring 1 and the second touch sensing wiring 2, and each pixel has a red coloring layer R, a green coloring layer G, and a blue coloring layer B constituting the color filter 60. Is provided. That is, the first touch sensing wiring 1 and the second touch sensing wiring 2 function as a black matrix that partitions the red coloring layer R, the green coloring layer G, and the blue coloring layer B. In the second embodiment, the red colored layer R, the green colored layer G, and the blue colored layer B are arranged in a stripe pattern.

As in the first embodiment, the first touch sensing wiring 1 and the second touch sensing wiring 2 have a structure in which a black layer and a conductive layer are stacked. The conductive layers forming the first touch sensing wiring 1 and the second touch sensing wiring 2 are three layers in which a conductive metal oxide layer, a copper alloy layer, and a conductive metal oxide are laminated, as in the first embodiment. It has a structure.
In particular, as shown in FIG. 15, the second touch sensing wiring 2 has a configuration in which a second black layer 76 and a second conductive layer 75 are sequentially stacked in the observation direction OB. The second black layer 76 has the same configuration as the second black layer of the first embodiment. The second conductive layer 75 has the same configuration as the second conductive layer of the first embodiment.

  In FIG. 13, the liquid crystal layer 506 sandwiched between the pixel electrode 59 and the common electrode 50 is controlled by a liquid crystal driving voltage applied between the pixel electrode 59 and the common electrode 50. The liquid crystal of the liquid crystal layer 506 is preferably a liquid crystal having a negative dielectric anisotropy, but a liquid crystal having a positive dielectric anisotropy may be used.

(Third embodiment)
Hereinafter, a third embodiment of the present invention will be described with reference to the drawings.
In 3rd Embodiment, the same code | symbol is attached | subjected to the same member as 1st Embodiment and 2nd Embodiment, and the description is abbreviate | omitted or simplified.
FIG. 17 is a sectional view partially showing a display device DSP3 according to the third embodiment of the present invention.
FIG. 18 is a cross-sectional view partially showing the frame portion F of the counter substrate 550 included in the display device DSP3 according to the third embodiment of the present invention.
FIG. 19 is a diagram showing the counter substrate 550 included in the display device DSP3 according to the third embodiment of the present invention, and is a plan view of the display device DSP3 viewed from the observer side.
FIG. 20 is a cross-sectional view partially showing an array substrate 600 according to the third embodiment of the present invention.
FIG. 21 is a view partially showing the pixel electrode 88 constituting the array substrate 600 according to the third embodiment of the present invention, and is an enlarged cross-sectional view showing a portion indicated by reference numeral W3 in FIG.
FIG. 22 is a cross-sectional view partially showing gate electrodes constituting an array substrate 600 according to the third embodiment of the present invention.

The counter substrate 550 constituting the display device DSP3 of the third embodiment includes a transparent substrate 44 having a first surface MF and a second surface MS opposite to the first surface MF. Touch sensing wiring is not provided on the second surface MS. In the first surface MF, a plurality of first touch sensing wires 1 and a plurality of second touch sensing wires 2 are formed in order in the observation direction OB (the direction opposite to the Z direction). That is, the second touch sensing wiring 2 is located between the first touch sensing wiring 1 and the array substrate 600. The plurality of second touch sensing wires 2 and the first surface MF are covered with a second transparent resin layer 105.
An insulating layer I (touch wiring insulating layer) is provided between the plurality of first touch sensing wires 1 and the plurality of second touch sensing wires 2, and the first touch sensing wire 1 and the second touch sensing wire are provided. 2 are electrically insulated from each other by an insulating layer I.
In the structure shown in FIG. 17, the first transparent resin layer 108 and the second transparent resin layer 105 are bonded together.

  As shown in FIG. 18, a peripheral circuit 80 related to driving of the organic EL layer (light emission of the organic EL layer) is formed in the frame portion 600F of the array substrate 600 located below the frame portion F. In the peripheral circuit 80, for example, TFTs that drive active elements of the array substrate 600, capacitive elements, resistance elements, and the like are disposed on the surface of the frame portion 600F of the array substrate 600. The electrical noise generated in the peripheral circuit 80 is cut at the frame portion F, and the influence on the first touch sensing wiring 1 that is a detection electrode can be reduced. The cell gap (thickness) of the display device is controlled by the conductive particles 102 which are spacers. The conductive particles 102 may be metal spheres, and conductive particles coated with an inorganic oxide and a metal with a resin as a nucleus can be applied. Alternatively, an anisotropic conductive film may be used. A connection terminal 107 is provided on the surface of the frame portion 600 </ b> F of the array substrate 600, and the conductive particles 102 are sandwiched between the connection terminal 107 and the first touch sensing wiring 1. Thereby, the first touch sensing wiring 1 is connected to the touch sensing control unit 122 through the connection terminal 107 of the array substrate 600.

The first touch sensing wiring 1 and the second touch sensing wiring 2 are orthogonal to each other in plan view. For example, the first touch sensing wiring 1 can be used as a touch detection electrode, and the second touch sensing wiring 2 can be used as a touch drive electrode. The touch sensing control unit 122 uses a capacitance C3 between the first touch sensing wiring 1 and the second touch sensing wiring 2 at the intersection of the first touch sensing wiring 1 and the second touch sensing wiring 2 as a touch signal. Detect changes.
Further, the role of the first touch sensing wiring 1 and the role of the second touch sensing wiring 2 may be interchanged. Specifically, the first touch sensing wiring 1 may be used as a touch drive electrode, and the second touch sensing wiring 2 may be used as a touch detection electrode.

  As each structure of the 1st touch sensing wiring 1 and the 2nd touch sensing wiring 2, the same structure as the cross-sectional structure shown in FIG. 8 demonstrated in 1st Embodiment is employable. The first touch sensing wiring 1 has a configuration in which a first black layer 16 and a first conductive layer 15 are sequentially stacked. As the structure of the first conductive layer 15, for example, three layers in which a copper alloy layer or a silver alloy layer that is the metal layer 20 is sandwiched between the first conductive metal oxide layer 21 and the second conductive metal oxide layer 22. It can be a structure. The first touch sensing wiring 1 and the second touch sensing wiring 2 orthogonal to the grid also serve as a black matrix for improving display contrast.

(Structure of array substrate 600)
Next, the structure of the array substrate 600 constituting the display device DSP3 will be described.
The substrate 45 of the array substrate 600 need not be a transparent substrate. For example, as a substrate applicable to the array substrate 600, a glass substrate, a ceramic substrate, a quartz substrate, a sapphire substrate, silicon, silicon carbide, silicon germanium, or the like can be used. A semiconductor substrate, a plastic substrate, etc. are mentioned.
In the array substrate 600, the fourth insulating layer 14, the active element 68 formed on the fourth insulating layer 14, the third insulating layer 13 formed so as to cover the fourth insulating layer 14 and the active element 68, the active element 68, the gate electrode 95 formed on the third insulating layer 13 so as to face the channel layer 58, the second insulating layer 12 formed so as to cover the third insulating layer 13 and the gate electrode 95, and the second insulating layer. A planarizing layer 96 formed on the layer 12 is sequentially stacked on the substrate 45.

A contact hole 93 is formed in the planarizing layer 96 at a position corresponding to the drain electrode 56 of the active element 68. A bank 94 is formed on the planarization layer 96 at a position corresponding to the channel layer 58. In a region between the banks 94 adjacent to each other in a cross-sectional view, that is, in a region surrounded by the banks 94 in a plan view, the upper surface of the planarization layer 96, the inside of the contact hole 93, and the drain electrode 56 are covered. A lower electrode 88 (pixel electrode) is formed on the substrate. Note that the lower electrode 88 may not be formed on the upper surface of the bank 94.
Further, a hole injection layer 91 is formed so as to cover the lower electrode 88, the bank 94, and the planarization layer 96. On the hole injection layer 91, a light emitting layer 92, an upper electrode 87, and a sealing layer 109 are sequentially stacked.
As will be described later, the lower electrode 88 has a configuration in which a silver or silver alloy layer is sandwiched between conductive metal oxide layers.

As a material of the bank 94, an organic resin such as an acrylic resin, a polyimide resin, or a novolac phenol resin can be used. The bank 94 may be further laminated with an inorganic material such as silicon oxide or silicon oxynitride.
As a material for the planarization layer 96, an acrylic resin, a polyimide resin, a benzocyclobutene resin, a polyamide resin, or the like may be used. A low dielectric constant material (low-k material) can also be used.
In order to improve visibility, any of the planarization layer 96, the sealing layer 109, or the substrate 45 may have a light scattering function. Alternatively, a light scattering layer may be formed above the substrate 45.
In FIG. 17, reference numeral 290 indicates a light emitting region composed of the lower electrode 88, the hole injection layer 91, the light emitting layer 92, and the upper electrode 87.

(Light emitting layer 92)
As shown in FIG. 20, the array substrate 600 includes a light emitting layer 92 (organic EL layer) which is a display function layer. In the light emitting layer 92, when an electric field is applied between a pair of electrodes, holes injected from an anode (for example, an upper electrode) and electrons injected from a cathode (for example, a lower electrode, a pixel electrode) are recombined. It is a display functional layer that is excited and emits light.
The light emitting layer 92 contains at least a material having a light emitting property (light emitting material), and preferably contains a material having an electron transporting property. The light emitting layer 92 is a layer formed between the anode and the cathode. When the hole injection layer 91 is formed on the lower electrode 88 (anode), the hole injection layer 91 and the upper electrode 87 (cathode) are formed. The light emitting layer 92 is formed between the two. When a hole transport layer is formed on the anode, the light emitting layer 92 is formed between the hole transport layer and the cathode. The roles of the upper electrode 87 and the lower electrode 88 can be interchanged.

  The film thickness of the light emitting layer 92 is arbitrary as long as the effects of the present invention are not significantly impaired. However, it is preferable that the film thickness is large from the viewpoint that defects are unlikely to occur in the film. On the other hand, when the film thickness is small, the drive voltage is low, which is preferable. For this reason, the film thickness of the light emitting layer 92 is preferably 3 nm or more, more preferably 5 nm or more, and on the other hand, it is usually preferably 200 nm or less, and more preferably 100 nm or less.

The material of the light-emitting layer 92 is not particularly limited as long as it emits light at a desired emission wavelength and does not impair the effects of the present invention, and a known light-emitting material can be applied. The light emitting material may be a fluorescent light emitting material or a phosphorescent light emitting material, but a material having good light emission efficiency is preferred, and a phosphorescent light emitting material is preferred from the viewpoint of internal quantum efficiency.
Examples of the light emitting material that gives blue light emission include naphthalene, perylene, pyrene, anthracene, coumarin, chrysene, p-bis (2-phenylethenyl) benzene, and derivatives thereof. Examples of the light emitting material that gives green light emission include quinacridone derivatives, coumarin derivatives, aluminum complexes such as Al (C ₉ H ₆ NO) _{3, and the} like.
Examples of the light-emitting material that gives red light emission include DCM (4- (dicyanomethylene) -2-methyl-6- (p-dimethylaminostyryl) -4H-pyran) compounds, benzopyran derivatives, rhodamine derivatives, benzothioxanthene derivatives, aza Examples include benzothioxanthene.
The configuration of the organic EL layer constituting the light emitting layer 92 and the light emitting material are not limited to the above materials.

As shown in FIG. 20, the light emitting layer 92 is formed on the hole injection layer 91 and is driven by a driving voltage applied between the upper electrode 87 and the lower electrode 88.
The lower electrode 88 has a structure in which a reflective layer 89 and conductive metal oxide layers 97 and 98 are laminated. In addition to the light emitting layer 92, an electron injection layer, an electron transport layer, a hole transport layer, or the like may be inserted between the upper electrode 87 and the lower electrode 88.
For the hole injection layer 91, a refractory metal oxide such as tungsten oxide or molybdenum oxide can be used. For the reflective layer 89, a silver alloy, an aluminum alloy, or the like having a high light reflectance can be used. Note that conductive metal oxides such as ITO do not have good adhesion to aluminum. For example, when the interface such as the electrode or the contact hole is made of ITO and an aluminum alloy, poor electrical connection is likely to occur. Silver or a silver alloy has good adhesion to a conductive metal oxide such as ITO, and a conductive metal oxide such as ITO tends to obtain an ohmic contact.

  As shown in FIG. 21, in this embodiment, in order to suppress silver migration, the lower electrode 88 has a silver or silver alloy layer (reflective layer 89) sandwiched between conductive metal oxide layers 97 and 98. It has a layer structure. As a material of the conductive metal oxide layers 97 and 98, the conductive metal oxide constituting the conductive metal oxide layers 21 and 22 described in the first embodiment can be used.

When applying a silver alloy layer to a light-reflective pixel electrode (lower electrode), the film thickness of a silver alloy layer can be selected from the range of 100 nm to 500 nm, for example. If necessary, the film thickness may be greater than 500 nm. Further, when the film thickness of the silver alloy layer is, for example, 9 nm to 15 nm, the silver alloy layer can be used for the light transmissive upper electrode or the counter electrode.
Further, regarding the display function layer, when a liquid crystal layer is used instead of the light emitting layer 92 (organic EL layer), the silver alloy layer is changed to a pixel electrode (lower electrode) by changing the film thickness of the silver alloy layer from 100 nm to 500 nm. And a reflective liquid crystal display device can be realized.

  In this embodiment, a composite oxide of indium oxide, gallium oxide, and antimony oxide is used as the conductive metal oxide. As a material of the silver alloy layer, a silver alloy that functions as a conductive layer can be applied. As an additive element added to silver, one or more metals selected from the group consisting of magnesium, calcium, titanium, molybdenum, indium, tin, zinc phthalo green pigment, neodymium, nickel, antimony, bismuth, copper and the like Elements can be used. The silver alloy layer of this embodiment was a silver alloy in which 1.5 at% calcium was added to silver. Calcium is selectively oxidized by heat treatment or the like in a subsequent process in a configuration in which a silver alloy is sandwiched between the conductive metal oxides. By forming such an oxide, the reliability of the structure in which the silver alloy layer is sandwiched between the conductive metal oxide layers can be improved. Furthermore, the reliability can be further improved by covering the structure in which the silver alloy layer is sandwiched by the conductive metal oxide layer with a nitride such as silicon nitride or molybdenum nitride.

  In the third embodiment, the active element 68 has the same top gate structure as that of the first embodiment. The channel layer of the third embodiment is also formed of an oxide semiconductor, as in the first embodiment. Furthermore, from the viewpoint of electron mobility of the transistor, the first layer is formed of an active matrix including a channel layer formed of a polysilicon semiconductor, and the active matrix is provided of a channel layer formed of an oxide semiconductor. It is preferable to adopt a structure in which the second layer is laminated. In the structure in which the first layer and the second layer are stacked in this way, for example, an active element (first layer) including a channel layer formed of a polysilicon semiconductor has a carrier ( It is used as a driving element for injecting electrons or holes. An active element (second layer) including a channel layer formed of an oxide semiconductor is used as a switching element that selects an active element including a channel layer formed of a polysilicon semiconductor. A silver alloy layer or a copper alloy layer sandwiched between conductive metal oxide layers can be used as a power line for emitting light from the organic EL layer that is electrically linked to the drive element. As such a structure, for example, the wiring structure shown in FIG. 22 is used. It is preferable to apply a silver alloy or a copper alloy having good conductivity to the wiring linked to the active element such as a power supply line.

  In the third embodiment, the metal layer 20 made of a copper alloy is used for the gate electrode 95. As shown in FIG. 22, the metal layer 20 constituting the gate electrode 95 is sandwiched between a first conductive metal oxide layer 97 and a second conductive metal oxide layer 98. The material used for the gate insulating layer, which is the third insulating layer 13, is the same as in the first embodiment.

(Modification of the third embodiment)
In the above embodiment, the structure in which the organic electroluminescence layer (organic EL) is employed as the light emitting layer 92 has been described. The light emitting layer 92 may be an inorganic light emitting diode layer. The light emitting layer 92 may have a structure in which inorganic LED chips are arranged in a matrix. In this case, a small LED chip for each of red light emission, green light emission, and blue light emission may be mounted on the array substrate 200. As a method of mounting the LED chip on the array substrate 200, mounting by face-down may be performed.

  When the light emitting layer 92 is composed of an inorganic LED, a blue light emitting diode or a blue-violet light emitting diode is disposed on the array substrate 200 (substrate 45) as the light emitting layer 92. After forming the nitride semiconductor layer and the upper electrode, a green phosphor is laminated on the green pixel, and a red phosphor is laminated on the red light emitting pixel. Thereby, inorganic LED can be simply formed in the array board | substrate 200. FIG. When such a phosphor is used, green light emission and red light emission can be obtained from each of the green phosphor and the red phosphor by excitation with blue light generated from the blue-violet light emitting diode.

  Alternatively, an ultraviolet light emitting diode may be disposed on the array substrate 200 (substrate 45) as the light emitting layer 92. In this case, after forming the nitride semiconductor layer and the upper electrode, a blue phosphor is laminated on the blue pixel, a green phosphor is laminated on the green pixel, and a red phosphor is laminated on the red pixel. Thereby, inorganic LED can be simply formed in the array board | substrate 200. FIG. When such a phosphor is used, for example, a green pixel, a red pixel, or a blue pixel can be formed by a simple method such as a printing method. For these pixels, it is desirable to adjust the size of the pixels from the viewpoint of the light emission efficiency and color balance of each color.

  For example, the display device according to the above-described embodiment can be variously applied. Electronic devices to which the display device according to the above-described embodiments can be applied include mobile phones, portable game devices, portable information terminals, personal computers, electronic books, video cameras, digital still cameras, head mounted displays, navigation systems, sound Examples include playback devices (car audio, digital audio player, etc.), copiers, facsimiles, printers, printer multifunction devices, vending machines, automatic teller machines (ATMs), personal authentication devices, optical communication devices, and the like. Each of the above embodiments can be used in any combination.

  While preferred embodiments of the present invention have been described and described above, it should be understood that these are exemplary of the invention and are not to be considered as limiting. Additions, omissions, substitutions, and other changes can be made without departing from the scope of the invention. Accordingly, the invention is not to be seen as limited by the foregoing description, but is limited by the scope of the claims.

DESCRIPTION OF SYMBOLS 1 ... 1st touch sensing wiring 2 ... 2nd touch sensing wiring 2A ... Sense wiring 2B ... Lead-out wiring 3 ... Overlapping part 9 ... 2nd gate wiring 10 ... 1st Gate wiring 11 ... 1st insulating layer 11H, 12H, 93, CH ... Contact hole 12 ... 2nd insulating layer 13 ... 3rd insulating layer 14 ... 4th insulating layer 15 ... 1st conductive layer 16 ... 1st black layer 17, 50 ... Common electrode 20 ... Metal layer 21, 97 ... 1st conductive metal oxide layer 22, 98 ... 2nd conductivity Metal oxide layer 24 ... Source electrodes 25, 95 ... Gate electrodes 26, 56 ... Drain electrodes 27, 58 ... Channel layers 28, 68 ... Active elements 28a ... First active elements 28b ... second active elements 29, 59, 88 ... image Electrode (lower electrode)
29 s through hole 30 common wiring 31 first source wiring 32 second source wiring 35, 75 second conductive layer 36, 76 second black layer 40 41, 42, 44 ... transparent substrate 45 ... substrate 60 ... color filter 80 ... peripheral circuit 87 ... upper electrode 89 ... reflective layer 91 ... hole injection layer 92 ... Light emitting layer 94 ... Bank 96 ... Flattening layer 100, 350, 550 ... Counter substrate (display device substrate)
101 ... anisotropic conductive film 102 ... conductive particles 103 ... spacer 104 ... seal layer 105 ... second transparent resin layer 107 ... connection terminal 108 ... first transparent resin Layer 109 ... Sealing layer 110 ... Display unit 120 ... Control unit 121 ... Video signal control unit (first control unit)
122 ... Touch sensing control unit (second control unit)
123 ... System control unit (third control unit)
200, 600 ... Array substrate 200F, 600F ... Frame portion 290 ... Light emitting region 300, 506 ... Liquid crystal layer B ... Blue colored layer F ... Frame portion G ... Green colored layer I ... Insulating layer K ... Housing P ... Observer R ... Red colored layer MF ... First surface MS ... Second surface OB ... Observation direction PX ... Pixel F21: First light-shielding conductive pattern F22: Second light-shielding conductive pattern FPC: Flexible printed circuit board PT1: First sensing pattern PT2: Second sensing pattern TM1: First terminal TM2 ... 2nd terminal F22A ... 1st light-shielding conductive part (light-shielding conductive part)
F22B: Second light-shielding conductive part (light-shielding conductive part)
F21L: Long side portion F21S ... Short side portion S, CS ... Slit H1, WS ... Width P1, PS ... Arrangement pitches C1, C2, C3 ... Capacitance DSP1, DSP2 , DSP3 ... display device

Claims (20)

A display device,
A display functional layer;
An array substrate for driving the display function layer;
A transparent substrate having a first surface facing the array substrate and a second surface opposite to the first surface; and a first black layer and a first layer in an observation direction from the second surface toward the first surface A first sensing pattern having a configuration in which one conductive layer is sequentially stacked and including a plurality of first touch sensing wires extending parallel to each other so as to be aligned in a first direction on the second surface; The second black layer and the second conductive layer are sequentially stacked in the observation direction, and are positioned between the plurality of first touch sensing wires and the array substrate, and the first direction in a plan view. A second sensing pattern including a plurality of second touch sensing wires extending parallel to each other so as to be arranged in a second direction orthogonal to the first touch sensing wire, and formed of the same material as the first touch sensing wire When The first light-shielding conductive pattern provided at the same position in a plan view and located outside the first sensing pattern, and formed of the same material as the second touch sensing wiring and the same in the sectional view as the second touch sensing wiring A second light-shielding conductive pattern provided at a position and located outside the second sensing pattern, a display unit facing the display functional layer, surrounding the display unit, and part of the first sensing pattern, A display device substrate comprising: a first light-shielding conductive pattern; and a light-shielding frame portion configured by the second light-shielding conductive pattern;
A control unit that performs touch sensing by detecting a change in capacitance between the first touch sensing wiring and the second touch sensing wiring;
Including
The second light-shielding conductive pattern has a plurality of light-shielding conductive parts having different sizes,
A display device in which a capacitor is formed between the first light-shielding conductive pattern and the second light-shielding conductive pattern. The first touch sensing wiring and the second touch sensing wiring are formed on the second surface,
An insulating layer is provided between the first touch sensing wiring and the second touch sensing wiring,
The display device according to claim 1, wherein the first touch sensing wiring and the second touch sensing wiring are electrically insulated from each other. The first touch sensing wiring is formed on the second surface,
The display device according to claim 1, wherein the second touch sensing wiring is formed on the first surface. On the first surface, the first touch sensing wiring and the second touch sensing wiring are sequentially formed in the observation direction,
An insulating layer is provided between the first touch sensing wiring and the second touch sensing wiring,
The display device according to claim 1, wherein the first touch sensing wiring and the second touch sensing wiring are electrically insulated from each other. A housing enclosing the array substrate and the display device substrate;
The display device according to claim 1, wherein the first light-shielding conductive pattern is grounded to the housing.   The display device according to claim 1, wherein the plurality of light shielding conductive portions of the second light shielding conductive pattern are divided by slits. The array substrate is
The display device according to claim 1, further comprising: an active element that has a channel layer that is in contact with the gate insulating layer and is formed of an oxide semiconductor, and that drives the display functional layer. The oxide semiconductor is
A metal oxide containing one or more selected from the group consisting of gallium, indium, zinc, tin, aluminum, germanium, and cerium;
A metal oxide containing at least one of antimony and bismuth;
The display apparatus of Claim 7 containing.   The display device according to claim 7, wherein the gate insulating layer is formed of a complex oxide containing cerium oxide.   The display device according to claim 7, wherein at least a gate wiring among the plurality of wirings electrically linked to the active element has a three-layer structure in which a copper alloy layer is sandwiched between conductive metal oxide layers. The array substrate includes an upper electrode and a lower electrode that sandwich the display function layer,
The display device according to claim 1, wherein the display function layer is a light emitting diode layer, and emits light by a driving voltage applied between the upper electrode and the lower electrode. The array substrate includes an upper electrode and a lower electrode that sandwich the display function layer,
The display device according to claim 1, wherein the display function layer is an organic electroluminescence layer and emits light by a driving voltage applied between the upper electrode and the lower electrode.   The display device according to claim 11, wherein at least one of the upper electrode and the lower electrode has a structure in which a silver alloy layer is sandwiched between conductive metal oxide layers. The display functional layer is a liquid crystal layer,
The array substrate includes a common electrode and a pixel electrode that sandwich the liquid crystal layer,
The display device according to claim 1, wherein the liquid crystal layer is driven by a potential difference between the common electrode and the pixel electrode.   The display device according to claim 14, wherein the common electrode is provided closer to the display device substrate than the pixel electrode in a cross-sectional view. A transparent substrate having a first surface and a second surface opposite to the first surface;
The first black layer and the first conductive layer are sequentially stacked in the observation direction from the second surface toward the first surface, formed on one of the first surface and the second surface. And a first sensing pattern including a plurality of first touch sensing wires extending in parallel with each other so as to be aligned in the first direction on the second surface;
It is formed on one of the first surface and the second surface, and has a configuration in which a second black layer and a second conductive layer are sequentially stacked in the observation direction, and is orthogonal to the first direction in plan view. A second sensing pattern including a plurality of second touch sensing wires extending in parallel with each other so as to be arranged in a second direction.
A first light-shielding conductive pattern formed of the same material as the first touch sensing wiring, provided at the same position in cross-sectional view as the first touch sensing wiring, and positioned outside the first sensing pattern;
A second light-shielding conductive pattern formed of the same material as the second touch sensing wiring, provided at the same position in cross-sectional view as the second touch sensing wiring, and positioned outside the second sensing pattern;
A light-shielding frame portion constituted by a part of the first sensing pattern, the first light-shielding conductive pattern, and the second light-shielding conductive pattern;
With
The second light-shielding conductive pattern has a plurality of light-shielding conductive parts having different sizes,
A display device substrate in which a capacitor is formed between the first light-shielding conductive pattern and the second light-shielding conductive pattern. The transparent substrate has a short side and a long side in plan view,
The display device substrate according to claim 16, wherein the first light-shielding conductive pattern is provided in parallel with the long side. The second light-shielding conductive pattern has a plurality of slits parallel to the first touch sensing wiring,
The display device substrate according to claim 16, wherein an overlapping portion is formed in which the plurality of first touch sensing wires and the plurality of slits overlap in a plan view, and the overlapping portion constitutes the frame portion.   The display device substrate according to claim 16, wherein the first conductive layer and the second conductive layer have a three-layer structure in which at least a copper alloy layer is sandwiched between conductive metal oxide layers. A plurality of pixels partitioned by the plurality of first touch sensing wires and the plurality of second touch sensing wires in a plan view;
The display device substrate according to claim 16, wherein the plurality of pixels include a color filter.

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