JP6365347B2 - Piezoelectric device, piezoelectric device manufacturing method, inkjet head, inkjet head manufacturing method, and inkjet printer - Google Patents

Description

  The present invention relates to a piezoelectric device in which a piezoelectric body is transferred onto a device substrate, a manufacturing method thereof, an inkjet head including the piezoelectric device, a manufacturing method thereof, and an inkjet printer.

  Conventionally, piezoelectric materials such as lead zirconate titanate (PZT) have been used as electromechanical conversion elements such as drive elements and sensors. In recent years, MEMS (Micro Electro Mechanical Systems) elements using a silicon (Si) substrate are increasing in response to demands for downsizing, high density, and low cost of devices. In order to apply a piezoelectric body to a MEMS element, it is desirable to make the piezoelectric body thin. By reducing the thickness of the piezoelectric body, high-precision processing using semiconductor process technology such as film formation and photolithography can be performed, and miniaturization and high density can be realized. Further, since the elements can be collectively processed on a large-area wafer, the cost can be reduced. Furthermore, there is an advantage that the conversion efficiency of mechanical electricity is improved and the characteristics of the drive element and the sensitivity of the sensor are improved.

  As an application example of a device using such a MEMS element, an ink jet printer is known. In an inkjet printer, a two-dimensional image is recorded on a recording medium by controlling the ejection of ink while moving an inkjet head having a plurality of channels for ejecting liquid ink relative to the recording medium such as paper or cloth. Formed.

  Ink can be ejected using a pressure actuator (piezoelectric, electrostatic, thermal deformation, etc.) or by generating bubbles in the ink in the tube by heat. Among them, the piezoelectric actuator has advantages such as high output, modulation, high responsiveness, and choice of ink, and has been frequently used in recent years. In particular, the use of an inkjet head using a thin film piezoelectric body (piezoelectric thin film) is suitable for realizing a small-sized and low-cost printer with high resolution (small droplets are acceptable).

As a method of forming a piezoelectric material such as PZT on a substrate such as Si, a chemical film formation method such as a CVD method (Chemical Vapor Deposition), a physical method such as a sputtering method or an ion plating method, a sol-gel method, etc. The growth method in the liquid phase is known. Such a piezoelectric body exhibits a good piezoelectric effect when the crystal has a perovskite structure. FIG. 10 schematically shows the crystal structure of PZT. A perovskite structure ideally has a cubic unit cell, and is arranged at the apex (A site) of each cubic crystal (for example, lead (Pb)) and at the body center (B site). ABO ₃ type crystal structure composed of a metal (for example, zirconium (Zr) or titanium (Ti)) and oxygen O arranged at the center of each face of a cubic crystal. Note that crystals having a perovskite structure include tetragonal crystals, orthorhombic crystals, rhombohedral crystals, and the like in which cubic crystals are distorted.

  In particular, large piezoelectric characteristics can be obtained when the PZT has a uniform single crystal structure. This tendency is remarkable in substances called so-called relaxor piezoelectric materials, such as PMN (lead magnesium niobate) and PZN (lead zinc niobate) in which Zr and Ti of PZT are replaced with other elements.

  By the way, the lattice constant of PZT is about 0.41 nm, and the lattice constant of Si is about 0.54 nm. Thus, since PZT and Si have different crystal lattice constants, when a piezoelectric body made of PZT is formed on a Si substrate, the piezoelectric body has a plurality of crystals 101 having different orientations as shown in FIG. Becomes a polycrystalline state gathered in a columnar shape. In the polycrystalline state, characteristics (for example, piezoelectric constant) are lower than those in the single crystalline state due to the influence of displacement restraint at the crystal grain boundary 101a. Further, since current leakage is likely to occur through the crystal grain boundary 101a, a large electric field cannot be applied to the piezoelectric body (= low withstand voltage).

  In this regard, for example, in Patent Document 1, a buffer layer containing MgO (magnesium oxide) is formed on a Si single crystal substrate, and PZT is formed on the buffer layer, whereby almost 100 crystals of the perovskite structure are formed. % PZT is obtained to improve the characteristics of PZT. For example, in Patent Documents 2 and 3, a PZT lattice-matched with MgO is formed on a single crystal MgO substrate, and then the PZT is transferred to a device substrate (transfer substrate, ink chamber component). A configuration having single crystal PZT on the device substrate is realized.

  On the other hand, for example, Non-Patent Document 1 discloses a method related to semiconductor transfer, but not transfer of a piezoelectric body. Specifically, a technique is disclosed in which a semiconductor is formed on a GaSb (gallium antimonide) substrate, this is transferred to a PDMS (polydimethylsiloxane) sheet, which is a type of silicone rubber, and then retransferred onto a Si substrate. doing. After the semiconductor is retransferred on the Si substrate, the PDMS sheet is peeled off.

Japanese Patent Laid-Open No. 5-139898 (refer to claim 1, paragraphs [0007], [0008], [0012], [0014], etc.) JP 2003-17780 A (refer to claim 1, paragraphs [0062], [0063], [0066], FIGS. 1 to 3) JP-A-2000-141654 (see claim 1, paragraphs [0015] to [0022], [0080] to [0084], FIG. 4, FIG. 6 etc.)

Hyunhyub Ko, et.al, "Ultrathin compound semiconductor on insulator layers for high-performance nanoscale transistors", Nature Materials, Vol.9, pp821-826, 2010

  By the way, the lattice constant of MgO is about 0.42 nm, and there is a large difference in lattice constant between MgO and Si. For this reason, even if PZT is formed on a Si substrate via a buffer layer containing MgO as in Patent Document 1, MgO is difficult to grow as a single crystal on the Si substrate. It is difficult to grow PZT as a single crystal. For this reason, there is a concern that the characteristics (piezoelectric constant, withstand voltage) of PZT may be reduced. In Patent Documents 2 and 3, since the single crystal MgO substrate is a hard substrate, if the pressing force of the MgO substrate is increased during the transfer of PZT, the PZT is cracked or chipped.

  Further, when the method of Non-Patent Document 1 is applied to transfer of a piezoelectric body, the piezoelectric body is transferred from the MgO substrate to the PDMS sheet, the piezoelectric body is re-transferred onto the Si substrate, and then the PDMS sheet is peeled off. Become. At the time of peeling, since a tensile stress acts on the device, there is a possibility that the piezoelectric body is cracked or chipped, and the adhesion of the piezoelectric body to the Si substrate is also lowered. Furthermore, since the piezoelectric body is not protected by the peeling of the PDMS sheet, the piezoelectric body is damaged (damaged by external force or deteriorated by moisture).

  The present invention has been made to solve the above problems, and its purpose is to improve the characteristics by improving the crystallinity of the piezoelectric body, to reduce cracks and chipping during transfer of the piezoelectric body, A piezoelectric device capable of avoiding damage to the piezoelectric body after transfer while avoiding a decrease in adhesion of the piezoelectric body after transfer to the device substrate, an inkjet head including the piezoelectric device, and a manufacturing method thereof, To provide an inkjet printer.

  The method for manufacturing a piezoelectric device according to one aspect of the present invention includes a film forming step of forming a single crystal piezoelectric body on a dedicated substrate, a transfer step of transferring the piezoelectric body to a resin sheet, and the piezoelectric body as the resin. A protection step of protecting the piezoelectric body by re-transferring the sheet integrally with the sheet onto the device substrate and leaving the resin sheet on the device substrate so as to cover the piezoelectric body.

  A single crystal piezoelectric body formed on a dedicated substrate (for example, an MgO substrate) is transferred to a resin sheet, and then transferred again onto the device substrate integrally with the resin sheet. Since the piezoelectric body is a single crystal, the characteristics of the piezoelectric body (for example, the piezoelectric constant and the withstand voltage) can be improved compared to the polycrystalline state. Further, since the resin sheet is soft, even if the pressing force of the resin sheet is increased during retransfer of the piezoelectric body to the device substrate, the pressure is absorbed or relaxed by the resin sheet. Thereby, it can reduce that a crack and a chip | tip arise in a piezoelectric material at the time of retransfer.

  Further, after the retransfer of the piezoelectric body, the resin sheet remains on the device substrate so as to cover the piezoelectric body. That is, the resin sheet is not peeled after retransfer. For this reason, it can avoid that a crack and a chip | tip arise in a piezoelectric material by the tensile stress at the time of peeling of a resin sheet, and the adhesiveness fall of the piezoelectric material by the said tensile stress can also be avoided. Further, since the piezoelectric body is protected by the resin sheet remaining after the retransfer, damage to the piezoelectric body after the retransfer can be avoided.

  The piezoelectric device manufacturing method may further include a piezoelectric patterning step of patterning the piezoelectric body to expose a part of the dedicated substrate before the transfer step.

  By patterning the piezoelectric body to expose a part of the dedicated substrate, the contact area of the piezoelectric body with the dedicated substrate is reduced. Thereby, when transferring a piezoelectric body to a resin sheet, the force which peels a piezoelectric body from an exclusive board | substrate can be made small, and peeling becomes easy.

  The piezoelectric device manufacturing method includes an electrode forming step of forming a first electrode on a side opposite to the dedicated substrate with respect to the piezoelectric body before the piezoelectric body patterning step, and patterning the first electrode. In the transfer step, the patterned piezoelectric body and the first electrode are transferred to the resin sheet, and in the protection step, the piezoelectric body is the first electrode. The piezoelectric body and the first electrode may be re-transferred onto the device substrate so as to be sandwiched between the device and the second electrode of the device substrate. In this case, it is possible to realize a configuration in which the patterned piezoelectric body and the first electrode are simultaneously retransferred onto the device substrate and the piezoelectric body is sandwiched between the first electrode and the second electrode of the device substrate. .

  The method for manufacturing the piezoelectric device may further include a removing step of removing a part of the resin sheet after the protecting step. By removing a part of the resin sheet, for example, a wiring for pulling out an electrode under the resin sheet to the outside, an electrode itself, or a flow path (for example, an ink flow path) connected to the device substrate is formed. It becomes possible.

  The resin sheet is preferably made of a photosensitive resin. In this case, a part (unnecessary part) of the resin sheet can be easily removed by exposing and developing the resin sheet.

  The method for manufacturing the piezoelectric device includes a removing step of removing a part of the resin sheet so that a part of the first electrode is exposed after the protecting step, and a method for drawing out the first electrode. You may further have the wiring formation process which forms wiring on the exposed said 1st electrode and the said resin sheet. In this case, after the retransfer, the first electrode can be drawn out by the wiring.

  The method for manufacturing the piezoelectric device includes a removing step of removing a part of the resin sheet so that a part of the piezoelectric body is exposed after the protecting step, and a first step on the exposed piezoelectric body. An electrode forming step of forming an electrode may be further included. By forming the first electrode after the retransfer of the piezoelectric body, it is only necessary to transfer only the piezoelectric body to the resin sheet in the transfer step before the retransfer. Can be peeled off.

  The method for manufacturing a piezoelectric device may further include a wiring forming step of forming a wiring electrically connected to the first electrode on the resin sheet after the electrode forming step. In this case, a voltage can be applied to the first electrode via the wiring.

  In the protection step, the piezoelectric body may be re-transferred onto the second electrode of the device substrate. Since the first electrode is formed on the piezoelectric body after the retransfer, a configuration in which the piezoelectric body is sandwiched between the first electrode and the second electrode of the device substrate can be realized.

  The device substrate may include a support substrate that supports the second electrode, and the support substrate may be a silicon substrate or an SOI substrate. Since the Si substrate or the SOI substrate can be easily processed, the piezoelectric device can be manufactured at low cost.

In the film forming step, the piezoelectric body made of lead zirconate titanate may be formed on the dedicated substrate made of magnesium oxide or strontium titanate. Since MgO and SrTiO ₃ and PZT have a small difference in lattice constant, it is easy to form a single crystal PZT on a dedicated substrate.

  In the device substrate used in the protection step, an opening may be formed at a position corresponding to the piezoelectric body. The piezoelectric device manufacturing method may further include an opening forming step of forming an opening at a position corresponding to the piezoelectric body of the device substrate. In these cases, for example, it is possible to realize a piezoelectric device (piezoelectric actuator) that applies pressure to the gas or liquid in the opening by expansion and contraction of the piezoelectric body, or to realize a piezoelectric device (piezoelectric sensor) that detects vibration of the piezoelectric body. it can.

  An ink jet head manufacturing method according to another aspect of the present invention is an ink jet head manufacturing method for manufacturing an ink jet head using the piezoelectric device manufacturing method described above. On the opposite side, there is a bonding step in which a nozzle substrate having an ink discharge hole for discharging the ink contained in the opening of the device substrate to the outside is bonded. By applying pressure to the ink accommodated in the opening of the device substrate by driving the piezoelectric device, the ink in the opening can be discharged to the outside through the nozzle holes of the nozzle substrate.

  A piezoelectric device according to still another aspect of the present invention includes a device substrate, a single crystal piezoelectric body formed on the device substrate, and a protective layer that protects the piezoelectric body on the device substrate, The protective layer transfers the single crystal piezoelectric body formed on a dedicated substrate onto a resin sheet, and retransfers the piezoelectric body onto the device substrate integrally with the resin sheet. Is formed of the resin sheet remaining on the device substrate.

  Since the piezoelectric body on the device substrate is a single crystal, the characteristics of the piezoelectric body (for example, the piezoelectric constant and the withstand voltage) can be improved as compared with the polycrystalline body. The protective layer for protecting the piezoelectric body on the device substrate is formed of a resin sheet used when transferring a single crystal piezoelectric body formed on the dedicated substrate. Since the resin sheet is soft, even if the pressing force of the resin sheet is increased when the piezoelectric body transferred from the dedicated substrate to the resin sheet is retransferred from the resin sheet onto the device substrate, the pressure is not reduced by the resin sheet. Absorbed or relaxed. Thereby, it can reduce that a crack and a chip | tip arise in a piezoelectric material.

  Moreover, the resin sheet which comprises a protective layer remains on the device substrate so that a piezoelectric material may be covered after retransfer of a piezoelectric material, and is not peeled. For this reason, it can be avoided that the piezoelectric body is cracked or chipped due to the tensile stress at the time of peeling of the resin sheet, or the adhesiveness of the piezoelectric body is lowered. Furthermore, since the resin sheet functions as a protective layer for protecting the piezoelectric body, damage to the piezoelectric body after retransfer can be avoided.

  It is desirable that a part of the resin sheet is in close contact with the device substrate. In this case, in addition to the adhesion between the piezoelectric body and the device substrate, the adhesion between the part other than the piezoelectric body (part of the resin sheet) and the device substrate can be secured, so that the piezoelectric body can be reliably peeled off from the device substrate. Can be reduced.

  The resin sheet is preferably made of a photosensitive resin. In this case, since the resin sheet can be easily patterned by exposing and developing the resin sheet, processing according to the specifications of the piezoelectric device is facilitated.

  The piezoelectric body may be bonded to the device substrate via oxygen. In this case, the adhesion between the piezoelectric body and the device substrate can be improved as compared with the case where the piezoelectric body is directly coupled to the device substrate (bonded without oxygen).

  The device substrate may have a polycrystal layer, and the piezoelectric body may be formed on the polycrystal layer. Even in a configuration in which a single crystal piezoelectric body is formed on a polycrystal layer, that is, a configuration in which the piezoelectric body and the device substrate are not lattice-matched, the characteristics are improved by the single crystal piezoelectric body. be able to.

  The polycrystal layer may be an electrode layer containing platinum, and the piezoelectric body may be composed of lead zirconate titanate. Since Pt and PZT cannot be directly bonded, the bonding can be improved by bonding these through oxygen.

  The piezoelectric device further includes a first electrode on a side opposite to the device substrate with respect to the piezoelectric body, and the device substrate sandwiches the piezoelectric body with the first electrode. 2 and a support substrate that supports the second electrode, the support substrate having an opening formed at a position corresponding to the piezoelectric body, and the piezoelectric with respect to the opening. You may have a diaphragm located in the body side.

  In this case, for example, a piezoelectric device that applies pressure to the gas or liquid in the opening of the support substrate by applying a voltage to the first electrode and the second electrode to expand and contract the piezoelectric body and vibrate the vibration plate ( Piezoelectric actuator) or a piezoelectric device (piezoelectric sensor) that detects the vibration of the piezoelectric body by detecting the voltage generated at the first electrode and the second electrode.

  An inkjet head according to still another aspect of the present invention is bonded to the piezoelectric device described above and the device substrate of the piezoelectric device on the side opposite to the piezoelectric body, and is accommodated in the opening of the device substrate. And a nozzle substrate having ink ejection holes for ejecting ink to the outside. According to this configuration, by applying pressure to the ink stored in the opening of the device substrate by driving the piezoelectric device, the ink in the opening can be ejected to the outside through the nozzle holes of the nozzle substrate.

  An ink jet printer according to still another aspect of the present invention includes the ink jet head described above, and ejects ink from the ink jet head toward a recording medium. Since the piezoelectric body constituting the piezoelectric device is a single crystal and has high characteristics, high-speed and high-definition drawing can be realized by driving the piezoelectric device.

  Improves the crystallinity of the piezoelectric body, reduces cracking and chipping during transfer (retransfer) of the piezoelectric body to the device substrate, and reduces the adhesion of the piezoelectric body to the device substrate after transfer. While avoiding, damage to the piezoelectric body after transfer can be avoided.

1 is an explanatory diagram illustrating a schematic configuration of an inkjet printer according to an embodiment of the present invention. FIG. It is the figure which showed together the top view which shows the schematic structure of the piezoelectric actuator of the inkjet head with which the said inkjet printer is provided, and the A-A 'arrow sectional drawing in the top view. It is sectional drawing of the said inkjet head. It is sectional drawing which shows a part of manufacturing process which concerns on the manufacturing method of the said inkjet head. It is sectional drawing which shows the continuation of the said manufacturing process. It is sectional drawing which shows the continuation of the said manufacturing process. It is sectional drawing which shows the continuation of the said manufacturing process. It is sectional drawing which shows a part of manufacturing process which concerns on the other manufacturing method of the said inkjet head. It is sectional drawing which shows a part of manufacturing process concerning the further another manufacturing method of the said inkjet head. It is explanatory drawing which shows typically the crystal structure of PZT. It is sectional drawing which shows typically the crystallinity of a piezoelectric material.

  An embodiment of the present invention will be described below with reference to the drawings. In the present specification, when the numerical range is expressed as A to B, the numerical value range includes the values of the lower limit A and the upper limit B.

[Configuration of inkjet printer]
FIG. 1 is an explanatory diagram illustrating a schematic configuration of an inkjet printer 1 according to the present embodiment. The ink jet printer 1 is a so-called line head type ink jet recording apparatus in which an ink jet head 21 is provided in a line shape in the width direction of a recording medium in the ink jet head unit 2.

  The ink jet printer 1 includes an ink jet head unit 2, a feed roll 3, a take-up roll 4, two back rolls 5 and 5, an intermediate tank 6, a liquid feed pump 7, a storage tank 8, and a fixing tank. And a mechanism 9.

  The ink jet head unit 2 ejects ink from the ink jet head 21 toward the recording medium P to perform image formation (drawing) based on image data, and is disposed in the vicinity of one back roll 5. The configuration of the inkjet head 21 will be described later.

  The feed roll 3, the take-up roll 4 and the back rolls 5 are members each having a cylindrical shape that can rotate about its axis. The feeding roll 3 is a roll that feeds the long recording medium P wound around the circumferential surface toward the position facing the inkjet head unit 2. The feeding roll 3 is rotated by driving means (not shown) such as a motor, thereby feeding the recording medium P in the X direction in FIG.

  The take-up roll 4 is taken out from the take-out roll 3 and takes up the recording medium P on which the ink is ejected by the inkjet head unit 2 around the circumferential surface.

  Each back roll 5 is disposed between the feed roll 3 and the take-up roll 4. One back roll 5 located on the upstream side in the conveyance direction of the recording medium P is opposed to the inkjet head unit 2 while winding the recording medium P fed by the feeding roll 3 around and supporting the recording medium P. Transport toward The other back roll 5 conveys the recording medium P from a position facing the inkjet head unit 2 toward the take-up roll 4 while being wound around and supported by a part of the peripheral surface.

  The intermediate tank 6 temporarily stores the ink supplied from the storage tank 8. The intermediate tank 6 is connected to the ink tube 10, adjusts the back pressure of the ink in each inkjet head 21, and supplies the ink to each inkjet head 21.

  The liquid feed pump 7 supplies the ink stored in the storage tank 8 to the intermediate tank 6 and is disposed in the middle of the supply pipe 11. The ink stored in the storage tank 8 is pumped up by the liquid feed pump 7 and supplied to the intermediate tank 6 through the supply pipe 11.

  The fixing mechanism 9 fixes the ink ejected to the recording medium P by the inkjet head unit 2 on the recording medium P. The fixing mechanism 9 includes a heater for heat-fixing the discharged ink on the recording medium P, a UV lamp for curing the ink by irradiating the discharged ink with UV (ultraviolet light), and the like. Yes.

  In the above configuration, the recording medium P fed from the feeding roll 3 is transported to a position facing the inkjet head unit 2 by the back roll 5, and ink is ejected from the inkjet head unit 2 to the recording medium P. Thereafter, the ink ejected onto the recording medium P is fixed by the fixing mechanism 9, and the recording medium P after ink fixing is taken up by the take-up roll 4. As described above, in the line head type inkjet printer 1, ink is ejected while the recording medium P is conveyed while the inkjet head unit 2 is stationary, and an image is formed on the recording medium P.

  The ink jet printer 1 may be configured to form an image on a recording medium by a serial head method. The serial head method is a method of forming an image by ejecting ink by moving an inkjet head in a direction (width direction) orthogonal to the transport direction while transporting a recording medium. In this case, the ink jet head moves in the width direction of the recording medium while being supported by a structure such as a carriage. Further, as the recording medium P, in addition to the long one, a sheet-like one that has been cut into a predetermined size (shape) in advance may be used.

[Configuration of inkjet head]
Next, the configuration of the inkjet head 21 will be described. FIG. 2 is a plan view showing a schematic configuration of the piezoelectric actuator 21a of the inkjet head 21 and a cross-sectional view taken along the line AA ′ in the plan view. In the plan view of FIG. 2, for the sake of convenience, illustration of a protective layer 27 and a wiring 28, which will be described later, is omitted. FIG. 3 is a cross-sectional view of an inkjet head 21 in which a nozzle substrate 31 is bonded to the piezoelectric actuator 21a of FIG.

  The inkjet head 21 has a thermal oxide film 23, a lower electrode 24, a piezoelectric body 25, and an upper electrode 26 in this order on a support substrate 22 having a plurality of pressure chambers 22a (openings). The support substrate 22, the thermal oxide film 23, and the lower electrode 24 constitute a device substrate 30. The piezoelectric body 25 and the upper electrode 26 are covered and protected by a protective layer 27 on the device substrate 30.

  The support substrate 22 is configured by a semiconductor substrate or an SOI (Silicon on Insulator) substrate made of a single crystal Si (silicon) alone having a thickness of about 100 to 300 μm, for example. The support substrate 22 is obtained by adjusting a substrate having a thickness of about 750 μm to a thickness of about 100 to 300 μm by polishing. The thickness of the support substrate 22 may be appropriately adjusted according to the device to be applied. The SOI substrate is obtained by bonding two Si substrates through an oxide film.

  An upper wall of the pressure chamber 22a in the support substrate 22 (a wall positioned on the piezoelectric body 25 side with respect to the pressure chamber 22a) constitutes a diaphragm 22b (diaphragm) serving as a driven film, and drives the piezoelectric body 25 ( Displacement (vibration) is accompanied with expansion and contraction, and pressure is applied to the ink in the pressure chamber 22a. The pressure chambers 22a are formed on the support substrate 22 in a staggered manner in plan view, that is, the pressure chambers 22a are positioned so as to be shifted in the row direction between adjacent rows.

The thermal oxide film 23 is made of, for example, SiO ₂ (silicon oxide) having a thickness of about 0.1 μm, and is formed for the purpose of protecting and insulating the support substrate 22.

The lower electrode 24 is a common electrode provided in common to the plurality of pressure chambers 22a, and is configured by laminating a Ti (titanium) layer and a Pt (platinum) layer. The Ti layer is formed in order to improve the adhesion between the thermal oxide film 23 and the Pt layer. The thickness of the Ti layer is, for example, about 0.02 μm, and the thickness of the Pt layer is, for example, about 0.1 μm. The lower electrode 24 is connected to a drive circuit 29 for driving the piezoelectric body 25. Instead of the Pt layer of the lower electrode 24, a layer made of a metal or metal oxide such as iridium (Ir), iridium oxide (IrO ₂ ), ruthenium (Ru), ruthenium oxide (RuO ₂ ) is formed. Also good.

The piezoelectric body 25 is a piezoelectric thin film having a perovskite structure represented by the general formula ABO ₃ , for example, a ferroelectric thin film made of PZT (lead zirconate titanate). The piezoelectric body 25 is provided corresponding to each pressure chamber 22a. The film thickness of the piezoelectric body 25 is, for example, 1 μm or more and 10 μm or less. In the present embodiment, the piezoelectric body 25 is formed on a dedicated substrate such as MgO (magnesium oxide) having a lattice constant close to that of PZT and transferred onto the device substrate 30 as described later. It is a single crystal piezoelectric body.

  The upper electrode 26 is an individual electrode provided corresponding to each pressure chamber 22a, and is configured by laminating a Ti layer and a Pt layer. The Ti layer is formed in order to improve the adhesion between the piezoelectric body 25 and the Pt layer. The thickness of the Ti layer is about 0.02 μm, for example, and the thickness of the Pt layer is about 0.1 to 0.2 μm, for example. Note that a layer made of gold (Au) may be formed instead of the Pt layer.

  The upper electrode 26 is connected to the drive circuit 29 via the wiring 28. The wiring 28 is formed on the protective layer 27 so as to fill the opening 27a formed in the protective layer 27, and is in contact with the upper electrode 26 in the opening 27a. Therefore, it is possible to apply a voltage to the upper electrode 26 via the wiring 28. The wiring 28 may be formed of the same metal material (for example, Pt) as the material included in the upper electrode 26, or may be formed of a different metal material.

  The protective layer 27 is composed of a resin sheet 40 made of a photosensitive resin (for example, epoxy resin). The resin sheet 40 is used when the piezoelectric body 25 is peeled off (transferred) from a dedicated substrate 51 (see FIG. 4), which will be described later, and the piezoelectric body 25 is transferred (retransferred) onto the device substrate 30. After the piezoelectric body 25 is retransferred onto the device substrate 30, it is left as it is without being peeled off from the device substrate 30. Thereby, the piezoelectric body 25 and the upper electrode 26 on the device substrate 30 are covered and protected by the resin sheet 40 left after the retransfer.

  A nozzle substrate 31 is bonded to the support substrate 22 on the side opposite to the piezoelectric body 25. The nozzle substrate 31 is formed with nozzle holes 31a (ink ejection holes) for ejecting ink stored in the pressure chambers 22a to the outside as ink droplets. Ink supplied from the intermediate tank 6 is stored in the pressure chamber 22a.

  In the above configuration, when a voltage is applied from the drive circuit 29 to the lower electrode 24 and the predetermined upper electrode 26, the piezoelectric body 25 is in a direction perpendicular to the thickness direction according to the potential difference between the lower electrode 24 and the upper electrode 26. It expands and contracts in the direction parallel to the surface of the support substrate 22. Then, due to the difference in length between the piezoelectric body 25 and the diaphragm 22b, a curvature is generated in the diaphragm 22b, and the diaphragm 22b is displaced (curved or vibrated) in the thickness direction.

  Therefore, if ink is accommodated in the pressure chamber 22a, a pressure wave is propagated to the ink in the pressure chamber 22a by the vibration of the vibration plate 22b described above, and the ink in the pressure chamber 22a drops from the nozzle hole 31a into an ink droplet. Is discharged to the outside.

  Note that the medium accommodated in the pressure chamber 22a may be a liquid other than ink or a gas. In this case, the piezoelectric actuator 21a can be used as a pump that applies pressure to the medium in the pressure chamber 22a and discharges the medium to the outside.

  Alternatively, the drive circuit 29 may be used as a voltage detection unit that detects a voltage generated between the upper electrode 26 and the lower electrode 24 due to vibration of the piezoelectric body 25. In this case, since the vibration of the piezoelectric body 25 can be detected by detecting the voltage in the drive circuit 29, the piezoelectric actuator 21a can be used as a piezoelectric sensor. For example, when the piezoelectric body 25 is vibrated by sound waves or ultrasonic waves, a voltage is generated between the upper and lower electrodes. By detecting the frequency and the magnitude of the voltage at this time, the piezoelectric actuator 21a is used as an ultrasonic sensor. Can do. In addition, based on the same principle, the piezoelectric actuator 21a can be used as a vibration sensor or a gyro sensor (angular velocity sensor).

[Inkjet head manufacturing method]
Next, the manufacturing method of the inkjet head 21 of this embodiment is demonstrated below including the manufacturing method of the piezoelectric actuator 21a. 4 to 7 show a flowchart showing the flow of the manufacturing process of the inkjet head 21 and cross-sectional views showing each manufacturing process.

  First, a dedicated substrate 51 is prepared (S1). As the dedicated substrate 51, a substrate having a crystal lattice constant close to the lattice constant (0.41 nm) of PZT formed thereon is selected. Here, a single crystal substrate of MgO (lattice constant: 0.42 nm) is used as the dedicated substrate 51. The size of the dedicated substrate 51 is, for example, about 1 to 4 inches in diameter and about 300 to 500 μm in thickness.

  Subsequently, a piezoelectric body 25 made of PZT is formed on the dedicated substrate 51 by sputtering (S2: film formation step). Since MgO and PZT are lattice-matched (because the difference in lattice constant is small), the crystal growth of PZT can be promoted. As a result, the piezoelectric substrate 25 is formed on the dedicated substrate 51 in a single crystal state. Be filmed.

  In addition to the sputtering method described above, the PZT film formation method includes other physical features such as ion plating, molecular beam epitaxy (MBE), and pulsed laser deposition (PLD). It may be a liquid phase method such as a phase method, a chemical vapor phase method such as metal organic chemical vapor deposition (MOCVD), or a sol-gel method. Moreover, although the thickness of PZT changes with uses, it is about 1 micrometer or less for a memory or a sensor use, and should just be about 5 micrometers or less for an actuator use.

  Next, a Ti layer 26a and a Pt layer 26b are formed in this order by sputtering on the surface of the piezoelectric body 25, that is, on the side opposite to the dedicated substrate 51 with respect to the piezoelectric body 25, and the Ti layer 26a and the Pt layer are formed. The upper electrode 26 made of 26b is formed as the first electrode (S3, S4: electrode forming step). The thickness of the Ti layer 26a is about 0.02 μm, and the thickness of the Pt layer 26b is about 0.1 μm.

  Next, the upper electrode 26 is patterned (S5, S6: electrode patterning step). More specifically, a resist agent is applied onto the upper electrode 26 by spin coating, exposed and developed to form a resist layer 52 that protects a necessary region (S5). Then, using the resist layer 52 as a mask, the Ti layer 26a and the Pt layer 26b of the upper electrode 26 are removed by a dry etching method (S6). If the upper electrode 26 has a Ti / Au laminated structure, the upper electrode 26 may be patterned by wet etching. At this time, an etching solution that can remove the resist agent is used. The patterning shape of the upper electrode 26 may be a shape corresponding to the shape of the pressure chamber 22a formed on the device substrate 30. For example, if the shape of the pressure chamber 22a is circular in plan view, the upper electrode 26 is also flat. Circular in view.

  Subsequently, the piezoelectric body 25 is patterned to expose a part of the dedicated substrate 51 (S7: piezoelectric body patterning step). For patterning the piezoelectric body 25, a dry etching method may be used, but when the piezoelectric body 25 is thick, a wet etching method may be used. As an etching solution at this time, a mixed solution of hydrofluoric acid and nitric acid can be used. Since the patterning of the piezoelectric body 25 is performed using the upper electrode 26 as a mask, the patterning shape is the same as the upper electrode 26 (for example, a circle).

  Thereafter, the resist layer 52 is removed with a solvent (S8).

  Next, the piezoelectric body 25 and the upper electrode 26 are transferred to the resin sheet 40 (S9, S10: transfer step). More specifically, a resist agent made of an epoxy-based photosensitive resin is applied on the dedicated substrate 51 so as to cover the piezoelectric body 25 and the upper electrode 26, and is cured to form the resin sheet 40 ( S9). The resin sheet 40 may be formed of a thermosetting resin, or may be formed of the same resin as the resist agent used in patterning the upper electrode 26 and the like. Thereafter, the resin sheet 40 is peeled from the end of the dedicated substrate 51 (S10).

  At this time, since the upper electrode 26 is adsorbed to the soft resin sheet 40, the adhesion between the upper electrode 26 and the resin sheet 40 is better than the adhesion between the dedicated substrate 51 (MgO) and the piezoelectric body 25 (PZT). Get higher. In addition, since the piezoelectric body 25 and the upper electrode 26 are covered with the resin sheet 40 and are almost integrated, the adhesion between the piezoelectric body 25 and the upper electrode 26 rather than the adhesion between the dedicated substrate 51 and the piezoelectric body 25. Sex is higher. As a result, when the resin sheet 40 is peeled from the dedicated substrate 51, the piezoelectric body 25 is transferred from the dedicated substrate 51 to the resin sheet 40 together with the upper electrode 26.

  Next, the piezoelectric body 25 and the upper electrode 26 are retransferred onto the device substrate 30 integrally with the resin sheet 40. Then, by leaving the resin sheet 40 on the device substrate 30 so as to cover the piezoelectric body 25 and the upper electrode 26, the piezoelectric body 25 and the upper electrode 26 are protected by the resin sheet 40 (S11, S12: protection step). More specifically, the aligner device positions the piezoelectric body 25 with respect to the device substrate 30 so that the position of the pressure chamber 22a of the device substrate 30 matches the position of the piezoelectric body 25 (S11). After the positioning, the resin sheet 40 to which the piezoelectric body 25 and the upper electrode 26 are transferred is pressed and adhered to the device substrate 30, and the piezoelectric body 25 and the upper electrode 26 are integrated with the resin sheet 40 on the device substrate 30. (S12). In addition, in order to improve both adhesiveness, you may wash | clean, incinerate, and heat the surface of both beforehand. By this retransfer, the resin sheet 40 becomes a protective layer 27 that protects the piezoelectric body 25 and the upper electrode 26 on the device substrate 30.

  As the device substrate 30, a substrate in which a support substrate 22 made of a Si substrate or an SOI substrate, a thermal oxide film 23, and a lower electrode 24 (second electrode) are formed in this order is prepared. A part of the support substrate 22 is removed in advance, and a circular pressure chamber 22a is formed in plan view. The lower electrode 24 is configured by laminating a Ti layer and a Pt layer in this order from the support substrate 22 side. The method of forming each layer of the lower electrode 24 may be the same as or different from that of each layer of the upper electrode 26.

  Thereafter, a wiring 28 for drawing out the upper electrode 26 is formed (S13, S14). That is, the resin sheet 40 is exposed and developed so that a part of the upper electrode 26 is exposed to remove a part of the resin sheet 40, and an opening 40a is formed in the resin sheet 40 (S13: removal). Process). The opening 40a corresponds to the opening 27a in FIGS. Then, the wiring 28 is formed on the upper electrode 26 and the resin sheet 40 exposed in the opening 40a (S14: wiring formation step). Thereby, the piezoelectric actuator 21a is completed.

  Further, the nozzle substrate 31 is bonded to the device substrate 30 of the piezoelectric actuator 21a on the side opposite to the piezoelectric body 25 (S15: bonding step). Thereby, the ink jet head 21 that discharges the ink stored in the pressure chamber 22a of the device substrate 30 to the outside from the nozzle holes 31a of the nozzle substrate 31 is completed.

  As described above, in this embodiment, the piezoelectric body 25 is formed as a single crystal on the dedicated substrate 51 whose lattice constant is matched with that of the piezoelectric body 25, and the single crystal piezoelectric body 25 is transferred to the resin sheet 40. Thereafter, the piezoelectric actuator 21a and the ink jet head 21 are obtained by retransferring them onto the device substrate 30. Since the piezoelectric body 25 is a single crystal, characteristics such as a piezoelectric constant and a withstand voltage can be improved as compared with a polycrystalline state.

  Further, since the resin sheet 40 is soft and easily deforms, when the resin sheet 40 is peeled from the end portion with respect to the dedicated substrate 51, the stress is likely to concentrate on the portion to be peeled. Therefore, the resin sheet 40 can be easily peeled off, and the piezoelectric body 25 can be reliably peeled off from the dedicated substrate 51 (transfer to the resin sheet 40 reliably). Further, since the resin sheet 40 is soft, the pressing force at the time of retransfer of the piezoelectric body is absorbed and relaxed by the resin sheet. Thereby, it is possible to reduce the occurrence of cracks and chipping in the piezoelectric body 25 during retransfer.

  Further, the single crystal piezoelectric body 25 on the device substrate 30 is covered and protected by a protective layer 27, and the protective layer 27 is formed of the resin sheet 40 described above. The resin sheet 40 remains on the device substrate 30 so as to cover the piezoelectric body 25 after the single crystal piezoelectric body 25 formed on the dedicated substrate 51 is retransferred onto the device substrate 30 and is not peeled off. Therefore, the crack / chip of the piezoelectric body 25 caused by the tensile stress at the time of peeling, and the adhesion deterioration do not occur. In addition, since the piezoelectric body 25 is protected by the resin sheet 40 (protective layer 27) remaining on the device substrate 30 after the retransfer, the piezoelectric body 25 is damaged (damaged by external force, deteriorated by moisture), dust, or the like after the retransfer. Dirt due to adhesion of can also be avoided.

  Further, before transferring the piezoelectric body 25 to the resin sheet 40, the piezoelectric body 25 is patterned to expose a part of the dedicated substrate 51. Therefore, the contact area between the piezoelectric body 25 and the dedicated substrate 51 is determined by patterning. Reduced compared to before. Thereby, when transferring the piezoelectric body 25 to the resin sheet 40, the force for peeling the piezoelectric body 25 from the dedicated substrate 51 can be reduced, and the peeling is facilitated.

  Further, since the piezoelectric body 25 is patterned so that a part of the dedicated substrate 51 is exposed, the resin sheet 40 is transferred when the piezoelectric body 25 is transferred to the resin sheet 40 and then transferred again to the device substrate 30. Part (corresponding to the removed part of the piezoelectric body 25) adheres to the device substrate 30. Thereby, in addition to the adhesiveness between the piezoelectric body 25 and the device substrate 30, the adhesiveness between a part of the resin sheet 40 and the device substrate 30 can be obtained. Therefore, the piezoelectric body 25 from the device substrate 30 after retransfer is obtained. Peeling can be reliably reduced.

  Further, before patterning the piezoelectric body 25, the upper electrode 26 is formed on the piezoelectric body 25 and patterned, and the piezoelectric body 25 and the upper electrode 26 are transferred to the resin sheet 40 at the same time. Since the transfer is performed, the piezoelectric actuator 21a having a structure in which the piezoelectric body 25 is sandwiched between the upper electrode 26 and the lower electrode 24 of the device substrate 30 can be obtained immediately after the retransfer.

  Further, after the retransfer, by removing a part of the resin sheet 40, as described above, the wiring 28 can be formed in the removed part (opening 40a) and the upper electrode 26 can be drawn out. . Moreover, since the resin sheet 40 has insulating properties, the wiring 28 can be freely formed on the resin sheet 40 (without being restricted in the drawing direction). Further, by removing a part of the resin sheet 40 after retransfer, the removed part can be used as an ink flow path depending on the place to be removed.

  Further, since the resin sheet 40 is made of a photosensitive resin, even when a part of the resin sheet 40 is removed, it can be easily patterned and removed by exposure and development.

  Further, the device substrate 30 includes a support substrate 22 that supports the lower electrode 24. The support substrate 22 is formed of a Si substrate or an SOI substrate that can be easily processed. Therefore, the piezoelectric actuator 21a and the inkjet head 21 are arranged. It can be manufactured at low cost.

  Further, since the difference in lattice constant between MgO and PZT is small, the single crystal piezoelectric body 25 can be easily formed by forming the piezoelectric body 25 made of PZT on the dedicated substrate 51 made of MgO. be able to.

  Further, since the pressure chamber 22a is formed in the device substrate 30 at a position corresponding to the piezoelectric body 25, the piezoelectric actuator 21a that applies pressure to the gas or liquid in the pressure chamber 22a by the expansion and contraction of the piezoelectric body 25 is realized. can do. Further, when the piezoelectric body 25 vibrates in the upper part of the pressure chamber 22a, a voltage is generated between the upper electrode 26 and the lower electrode 24 due to the piezoelectric effect. Therefore, the vibration of the piezoelectric body 25 is detected by detecting the voltage. A piezoelectric sensor can also be realized. That is, the method for manufacturing the piezoelectric actuator 21a described in the present embodiment can also be used as a method for manufacturing a piezoelectric sensor.

  In this embodiment, Pt or the like is used as the material constituting the upper electrode 26 and the lower electrode 24. However, the crystallinity of PZT is sufficiently improved by lattice matching with MgO constituting the dedicated substrate 51. Therefore, restrictions on the electrode material to be used can be eliminated (the range of material selection can be expanded). For example, it is inexpensive such as general aluminum (Al), copper (Cu), chromium (Cr), etc. A metal can be used as an electrode material. Thereby, the crystallinity improvement of PZT and cost reduction can be made compatible.

[Adhesion between piezoelectric body and device substrate]
For example, in the case where a lower electrode made of Pt and a piezoelectric body made of PZT are sequentially formed on a Si substrate, Si and Pt are not lattice-matched. Therefore, Pt is polycrystalline on the Si substrate. grow up. Therefore, since PZT deposited on Pt grows in a polycrystalline manner following the underlying Pt layer, the crystallinity of the PZT initial layer decreases (cannot be deposited as a single crystal). The crystallinity of the initial layer affects the adhesion at the interface between Pt and PZT, and when the crystallinity of the initial layer is lowered, PZT is easily peeled from Pt. Further, when the crystallinity of the initial layer is lowered, the crystallinity of the later layer of PZT is likely to be lowered. When the crystallinity of the later layer is lowered, characteristics such as piezoelectric constant and withstand voltage of PZT are lowered.

  Further, in a general vapor deposition method, the surface of the Pt is not oxidized in order to keep the inside of the apparatus in a vacuum. Even if PZT is formed on this Pt, PZT can be formed via oxygen through Pt. Cannot be combined with. As a result, the adhesion between PZT and Pt decreases and the crystallinity of the PZT initial layer decreases, and the characteristics such as the piezoelectric constant and the withstand voltage also decrease for the same reason as described above.

  On the other hand, in this embodiment, since PZT is formed on the dedicated substrate 51 made of MgO lattice-matched with PZT, the crystallinity of PZT is improved (PZT can be formed as a single crystal). . For this reason, characteristics, such as a piezoelectric constant and a withstand voltage, can be improved. In addition, since PZT is transferred (retransferred) to the device substrate 30 using the resin sheet 40, the surface of the device substrate 30 is exposed to the atmosphere before the transfer or the device substrate 30 is heated before the transfer. Oxygen can be bonded onto Pt (lower electrode 24). Then, PZT can be strongly bonded to Pt via oxygen by transferring PZT to the device substrate 30 under pressure and close contact. Thereby, the adhesiveness of PZT and Pt can be improved.

  That is, in this embodiment, since single crystal PZT is transferred onto the polycrystalline Pt layer on the device substrate 30, PZT and Pt are not lattice-matched. Even if it is not configured, the crystallinity, adhesion and characteristics of PZT can be improved as described above.

  Further, even when the above-described metal such as Al, Cu, Cr is used as the material of the lower electrode 24, it is possible to realize a bond via oxygen between PZT and the metal or the oxide thereof, Thereby, adhesion can be improved.

[Other manufacturing methods of piezoelectric actuator]
FIG. 8 is a cross-sectional view showing a part of a manufacturing process according to another manufacturing method of the piezoelectric actuator 21a. The upper electrode 26 may be formed after the piezoelectric body 25 is re-transferred onto the device substrate 30 integrally with the resin sheet 40. In this case, the processes up to the formation of the upper electrode 26 are the same as S1 to S12 except for S3 and S4 described above. Hereinafter, the process after S12 will be described.

  After the piezoelectric body 25 is retransferred to the device substrate 30 together with the resin sheet 40, the resin sheet 40 is exposed and developed so that a part of the piezoelectric body 25 is exposed, and a part of the resin sheet 40 is removed. Then, the opening 40a is formed (removal step). Subsequently, an upper electrode 26 is formed by sequentially forming a Ti layer and a Pt layer on the piezoelectric body 25 exposed in the opening 40a (electrode formation step). Thereafter, the wiring 28 electrically connected to the upper electrode 26 is formed on the resin sheet 40 from the connecting portion with the upper electrode 26 (wiring forming step).

  In this way, by forming the upper electrode 26 after retransferring the piezoelectric body 25 to the device substrate 30, in the transfer step (S9, S10) before retransfer, only the piezoelectric body 25 is transferred from the dedicated substrate 51 to the resin sheet. Therefore, the piezoelectric body 25 can be reliably transferred and peeled off from the dedicated substrate 51. Further, by forming the wiring 28 after the piezoelectric body 25 is re-transferred, it is possible to apply a voltage from the drive circuit 29 (see FIG. 2) to the upper electrode 26 via the wiring 28.

[Further manufacturing method of piezoelectric actuator]
FIG. 9 is a cross-sectional view showing a part of a manufacturing process according to still another method for manufacturing the piezoelectric actuator 21a. Instead of using the device substrate 30 in which the pressure chamber 22a is previously formed on the support substrate 22, a step of forming the pressure chamber 22a on the support substrate 22 is provided somewhere in the manufacturing process of the piezoelectric actuator 21a. You may do it. For example, as shown in the figure, after the piezoelectric body 25 is re-transferred to the device substrate 30, the pressure chamber 22a may be formed by etching at a position corresponding to the piezoelectric body 25 of the device substrate 30 (support substrate 22). (Opening formation process). As described above, even if the piezoelectric substrate 25 is retransferred using the device substrate 30 in which the pressure chamber 22a is not formed in advance on the support substrate 22, the piezoelectric chamber 21a or the piezoelectric actuator 21a is formed by forming the pressure chamber 22a after the retransfer. A piezoelectric device such as a piezoelectric sensor can be realized.

  In the above example, the opening forming step is performed after retransfer of the piezoelectric body 25 to the device substrate 30, but may be performed before retransfer.

[Others]
Other additives may be added to the A site and B site of PZT having a perovskite structure. For example, in addition to Pb, elements at the A site include barium (Ba), lanthanum (La), strontium (Sr), bismuth (Bi), lithium (Li), sodium (Na), calcium (Ca), cadmium ( It may contain at least one of Cd), magnesium (Mg), and potassium (K). In addition to Zr and Ti or in place of at least one of Zr and Ti, the element at the B site may be hafnium (Hf), vanadium (V), niobium (Nb), tantalum (Ta), chromium (Cr ), Molybdenum (Mo), tungsten (W), manganese (Mn), scandium (Sc), cobalt (Co), copper (Cu), indium (In), tin (Sn), gallium (Ga), cadmium (Cd) ), Iron (Fe), and nickel (Ni). Therefore, for example, a relaxor piezoelectric material such as PMN or PZN can be used as the piezoelectric body.

A single crystal substrate (lattice constant: 0.39 nm) made of strontium titanate (SrTiO ₃ ) may be used as a dedicated substrate that lattice matches with the single crystal piezoelectric material (PZT). The linear expansion coefficient of the dedicated substrate is desirably close to the linear expansion coefficient (6.7 ppm / K) of PZT.

The piezoelectric body may be a piezoelectric body other than PZT (for example, a lead-free piezoelectric body). In this case, the dedicated substrate for forming the piezoelectric single crystal may be used which piezoelectric lattice-matched, for example, aluminum oxide (Al ₂ O ₃₎ substrate made (lattice constant: 0.48 nm ) Can also be used.

  In this embodiment, an example in which the piezoelectric device is applied to an actuator (piezoelectric actuator) of an inkjet head and an inkjet printer has been described. However, other piezoelectric sensors such as vibration sensors, gyro sensors, and ultrasonic sensors, infrared sensors, and frequency filters It is also possible to apply to various devices such as a nonvolatile memory.

  The piezoelectric device of the present invention can be used for an actuator of an inkjet head, for example.

DESCRIPTION OF SYMBOLS 1 Inkjet printer 21 Inkjet head 21a Piezoelectric actuator (piezoelectric device)
22 Support substrate 22a Pressure chamber (opening)
24 Lower electrode 25 Piezoelectric body 26 Upper electrode 27 Protective layer 28 Wiring 30 Device substrate 31 Nozzle substrate 31a Nozzle hole (ink ejection hole)
40 Resin sheet 51 Dedicated substrate

Claims (24)

A film forming process for forming a single crystal piezoelectric film on a dedicated substrate;
A transfer step of transferring the piezoelectric body to a resin sheet;
By leaving the piezoelectric body is retransferred to the resin sheet integrally with the device on a substrate, the resin sheet so as to cover the piezoelectric element on the device substrate, have a protective step for protecting the piezoelectric element And
Before the transfer step, the method further includes a piezoelectric patterning step of patterning the piezoelectric body to expose a part of the dedicated substrate,
Before the piezoelectric patterning step,
An electrode forming step of forming a first electrode on a side opposite to the dedicated substrate with respect to the piezoelectric body;
An electrode patterning step of patterning the first electrode,
In the transfer step, the piezoelectric body and the first electrode after patterning are transferred to the resin sheet,
In the protection step, the piezoelectric body and the first electrode are re-transferred onto the device substrate so that the piezoelectric body is sandwiched between the first electrode and the second electrode of the device substrate. A method of manufacturing a piezoelectric device characterized by the above. The method for manufacturing a piezoelectric device according to claim 1 , further comprising a removing step of removing a part of the resin sheet after the protecting step. A film forming process for forming a single crystal piezoelectric film on a dedicated substrate;
A transfer step of transferring the piezoelectric body to a resin sheet;
A protective step of protecting the piezoelectric body by retransferring the piezoelectric body integrally with the resin sheet onto the device substrate and leaving the resin sheet on the device substrate so as to cover the piezoelectric body. And
After the protection step, the manufacturing method of the pressure conductive devices that characterized by having removing step further to remove a portion of the resin sheet. The method for manufacturing a piezoelectric device according to claim 3 , further comprising a piezoelectric patterning step of patterning the piezoelectric body to expose a part of the dedicated substrate before the transfer step. . The method for manufacturing a piezoelectric device according to claim 2 , wherein the resin sheet is made of a photosensitive resin. After the protection step,
A removing step of removing a part of the resin sheet so that a part of the first electrode is exposed;
2. The piezoelectric device according to claim 1 , further comprising a wiring forming step of forming a wiring for drawing out the first electrode on the exposed first electrode and the resin sheet. Device manufacturing method. A film forming process for forming a single crystal piezoelectric film on a dedicated substrate;
A transfer step of transferring the piezoelectric body to a resin sheet;
A protective step of protecting the piezoelectric body by retransferring the piezoelectric body integrally with the resin sheet onto the device substrate and leaving the resin sheet on the device substrate so as to cover the piezoelectric body. And
Before the transfer step, the method further includes a piezoelectric patterning step of patterning the piezoelectric body to expose a part of the dedicated substrate,
After the protection step,
A removing step of removing a part of the resin sheet so that a part of the piezoelectric body is exposed;
A method for manufacturing a piezoelectric device, further comprising an electrode forming step of forming a first electrode on the exposed piezoelectric body.   The piezoelectric device according to claim 7, further comprising a wiring forming step of forming a wiring electrically connected to the first electrode on the resin sheet after the electrode forming step. Manufacturing method.   9. The method of manufacturing a piezoelectric device according to claim 7, wherein, in the protection step, the piezoelectric body is re-transferred onto a second electrode of the device substrate. The device substrate includes a support substrate that supports the second electrode;
The support substrate, the manufacturing method of the piezoelectric device according to claim 1 or 9, characterized in that a silicon substrate or a SOI substrate.   The said film-forming process WHEREIN: The said piezoelectric material which consists of lead zirconate titanate is formed into a film on the said exclusive substrate which consists of magnesium oxide or strontium titanate. A method for manufacturing a piezoelectric device.   The method for manufacturing a piezoelectric device according to claim 1, wherein an opening is formed at a position corresponding to the piezoelectric body in the device substrate used in the protection step.   12. The method for manufacturing a piezoelectric device according to claim 1, further comprising an opening forming step of forming an opening at a position corresponding to the piezoelectric body of the device substrate. An inkjet head manufacturing method for manufacturing an inkjet head using the piezoelectric device manufacturing method according to claim 12 or 13,
A bonding step of bonding a nozzle substrate having an ink discharge hole for discharging the ink contained in the opening of the device substrate to the outside on the opposite side of the piezoelectric body from the device substrate; A method for manufacturing an ink-jet head. A device substrate;
A single crystal piezoelectric body formed on the device substrate;
A protective layer for protecting the piezoelectric body on the device substrate;
The protective layer transfers the single crystal piezoelectric body formed on a dedicated substrate onto a resin sheet, and retransfers the piezoelectric body onto the device substrate integrally with the resin sheet. Is formed with the resin sheet remaining on the device substrate so as to cover ,
A part of the resin sheet is in close contact with the device substrate . The piezoelectric device according to claim 15 , wherein the resin sheet is made of a photosensitive resin. A device substrate;
A single crystal piezoelectric body formed on the device substrate;
A protective layer for protecting the piezoelectric body on the device substrate;
The protective layer transfers the single crystal piezoelectric body formed on a dedicated substrate onto a resin sheet, and retransfers the piezoelectric body onto the device substrate integrally with the resin sheet. Is formed with the resin sheet remaining on the device substrate so as to cover,
The piezoelectric sheet is characterized in that the resin sheet is made of a photosensitive resin.   The piezoelectric device according to claim 15, wherein the piezoelectric body is bonded to the device substrate through oxygen. A device substrate;
A single crystal piezoelectric body formed on the device substrate;
A protective layer for protecting the piezoelectric body on the device substrate;
The protective layer transfers the single crystal piezoelectric body formed on a dedicated substrate onto a resin sheet, and retransfers the piezoelectric body onto the device substrate integrally with the resin sheet. Is formed with the resin sheet remaining on the device substrate so as to cover,
The piezoelectric device, wherein the piezoelectric body is bonded to the device substrate through oxygen. The device substrate has a polycrystalline layer,
The piezoelectric body, the piezoelectric device according to claim 18 or 19, characterized in that it is formed on the layer made of the polycrystalline. The polycrystal layer is an electrode layer containing platinum,
The piezoelectric device according to claim 20 , wherein the piezoelectric body is made of lead zirconate titanate. A first electrode on the opposite side of the piezoelectric substrate from the device substrate;
The device substrate is
A second electrode that sandwiches the piezoelectric body with the first electrode;
A support substrate for supporting the second electrode,
The support substrate is
An opening formed at a position corresponding to the piezoelectric body;
The piezoelectric device according to any one of claims 15 to 21, characterized in that it has a vibration plate positioned in the piezoelectric body side with respect to the opening. A piezoelectric device according to claim 22 ;
A nozzle substrate that is bonded to the device substrate of the piezoelectric device on a side opposite to the piezoelectric body and has an ink discharge hole for discharging ink accommodated in the opening of the device substrate to the outside. An ink jet head characterized by comprising: An inkjet printer comprising the inkjet head according to claim 23 , wherein ink is ejected from the inkjet head toward a recording medium.

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