JP6345606B2 - Joining system and joining method - Google Patents

Description

  The disclosed embodiments relate to a joining system and a joining method.

  Conventionally, a bonding system for bonding substrates such as a semiconductor wafer and a glass substrate is known (see Patent Document 1).

JP 2012-069900 A

  However, the above-described conventional technology has room for further improvement in terms of improving the joining accuracy.

  An object of one embodiment is to provide a joining system and a joining method that can improve joining accuracy.

  A joining system according to an aspect of an embodiment includes a heat treatment apparatus and a joining apparatus. The heat treatment apparatus includes: a first holding unit that holds the first substrate by electrostatic adsorption force; a second holding unit that holds the second substrate by electrostatic adsorption force; the first substrate and the second substrate at a first temperature; A first heating section for heating the The bonding apparatus includes a third holding unit that holds the first substrate by electrostatic adsorption force, a fourth holding unit that holds the second substrate by electrostatic adsorption force, the first substrate, and the second substrate from the first temperature. A pressurizing unit that presses the first substrate and the second substrate by relatively approaching the second heating unit, the third holding unit, and the fourth holding unit that heat to a high second temperature is provided.

  According to one aspect of the embodiment, the joining accuracy can be improved.

FIG. 1 is a diagram illustrating a configuration of a joining system according to the present embodiment. FIG. 2 is a diagram showing the configuration of the heat treatment apparatus. FIG. 3 is a diagram illustrating a configuration of the bonding apparatus. FIG. 4 is a diagram illustrating a configuration of the first holding unit and its periphery. FIG. 5 is a diagram illustrating a configuration of the cooling unit. FIG. 6 is a schematic side view showing the configuration of the horizontal position adjustment unit. FIG. 7 is a schematic bottom view showing the configuration of the horizontal position adjustment unit. FIG. 8 is a diagram illustrating a configuration of the second holding unit and its periphery. FIG. 9 is a diagram illustrating the configuration of the pressurizing unit and the horizontality adjusting unit. FIG. 10 is a diagram illustrating a configuration of the contact portion. FIG. 11 is a diagram illustrating a configuration of a contact portion according to a modification. FIG. 12 is a view of the horizontality adjusting unit as viewed from above. FIG. 13 is a diagram illustrating a configuration of the alignment mark detection unit. FIG. 14 is a diagram illustrating an example of alignment marks provided on the first substrate. FIG. 15 is a diagram illustrating an example of alignment marks provided on the second substrate. FIG. 16 is a diagram showing the rated operating temperature range of the electrostatic chuck. FIG. 17 is a diagram illustrating a rated operating temperature range of the electrostatic chuck according to the modification. FIG. 18 is a flowchart showing a series of processing procedures executed in the joining system. FIG. 19 is a flowchart illustrating the processing procedure of the joining process. FIG. 20 is a diagram illustrating an operation example of the horizontality adjustment processing. FIG. 21 is a diagram illustrating an operation example of the horizontality adjustment processing. FIG. 22 is a diagram illustrating an operation example of the horizontality adjustment processing. FIG. 23 is a diagram illustrating an operation example of the horizontal position adjustment processing. FIG. 24 is a diagram illustrating an operation example of the horizontal position adjustment processing. FIG. 25 is a diagram illustrating an operation example of the horizontal position adjustment processing. FIG. 26 is a diagram illustrating an operation example of the temporary pressurizing process. FIG. 27 is a diagram illustrating an operation example of the pressurizing process.

  Hereinafter, embodiments of a joining system and a joining method disclosed in the present application will be described in detail with reference to the accompanying drawings. In addition, this invention is not limited by embodiment shown below.

<1. Configuration of Bonding System 100>
First, the configuration of the joining system according to the present embodiment will be described with reference to FIG. FIG. 1 is a diagram illustrating a configuration of a joining system according to the present embodiment. In the following, in order to clarify the positional relationship, the X-axis direction, the Y-axis direction, and the Z-axis direction that are orthogonal to each other are defined, and the positive direction of the Z-axis is the vertically upward direction.

  The bonding system 100 according to the present embodiment shown in FIG. 1 forms a superposed substrate T by bonding a first substrate W1 and a second substrate W2.

  As shown in FIG. 1, the joining system 100 includes a carry-in / out station 1, an aligner 2 with a reversing mechanism (hereinafter simply referred to as “aligner 2”), a load lock chamber 3, a transfer chamber 4, and a heat treatment apparatus. 5 and the joining device 6.

  The carry-in / out station 1 includes a mounting table 7 and a transfer area 8. The mounting table 7 includes a plurality of (for example, four) cassette mounting plates 101. On each cassette placement plate 101, cassettes C1 to C3 capable of accommodating a plurality of (for example, 25) substrates in a horizontal state are placed. The cassette C1 is a cassette that accommodates the first substrate W1, the cassette C2 is a cassette that accommodates the second substrate W2, and the cassette C3 is a cassette that accommodates the overlapping substrate T.

  The conveyance area 8 is arranged adjacent to the Y-axis positive direction side of the mounting table 7. In the transport region 8, a transport path 102 extending along the X-axis direction and a first transport device 103 that can move along the transport path 102 are provided. The first transfer device 103 is also movable in the Y-axis direction and can be swung around the Z-axis, and the first substrate W1, the second substrate W2, and the superposition with respect to the cassettes C1 to C3, the aligner 2, and the load lock chamber 3. The substrate T is carried in and out. In addition to the cassettes C <b> 1 to C <b> 3, for example, a cassette for collecting a defective substrate may be placed on the cassette placement plate 101.

  The aligner 2 is disposed adjacent to the transport region 8 on the Y axis positive direction side. The aligner 2 adjusts the horizontal positions of the first substrate W1 and the second substrate W2. For example, the aligner 2 detects the position of the orientation flat or notch formed on the first substrate W1 and the second substrate W2, and performs a pre-alignment process for matching the detected orientation flat or notch position to a predetermined position. The aligner 2 has a reversing mechanism that reverses the front and back of the first substrate W1.

  The load lock chamber 3 is disposed adjacent to the transfer region 8 on the Y axis positive direction side via a gate valve 9a. In the load lock chamber 3, a delivery unit for delivering the first substrate W 1, the second substrate W 2, and the superposed substrate T is provided. The delivery unit is a wafer mounting unit (cooling plate) having a cooling function, and can cool the temperature of the superposed substrate T after the bonding process to, for example, room temperature.

  The transfer chamber 4 is disposed adjacent to the load lock chamber 3 on the Y axis positive direction side via a gate valve 9b. A second transfer device 104 is disposed in the transfer chamber 4. The second transfer device 104 includes an arm portion that can be expanded and contracted along the horizontal direction and a base portion that can be swung around the Z-axis, and the first substrate W1 with respect to the load lock chamber 3, the heat treatment device 5, and the bonding device 6. The second substrate W2 and the superposed substrate T are carried in and out.

  The heat processing apparatus 5 is arrange | positioned adjacent to the X-axis positive direction side of the conveyance chamber 4 via the gate valve 9c. The heat treatment apparatus 5 performs a preheating process for heating the first substrate W1 and the second substrate W2 to a predetermined temperature before the bonding process by the bonding apparatus 6. The configuration of the heat treatment apparatus 5 will be described later.

  The joining device 6 is disposed adjacent to the transfer chamber 4 on the Y axis positive direction side via a gate valve 9d. The bonding apparatus 6 bonds the first substrate W1 and the second substrate W2 to form the superposed substrate T. The configuration of the joining device 6 will be described later.

  The joining system 100 includes a control device 200. The control device 200 controls the operation of the bonding system 100. The control device 200 is a computer, for example, and includes a control unit and a storage unit (not shown). The storage unit is configured by a storage device such as a RAM (Random Access Memory), a ROM (Read Only Memory), and a hard disk, for example, and stores a program for controlling various processes such as a joining process. The control unit is, for example, a CPU (Central Processing Unit), and controls the operation of the bonding system 100 by reading and executing a program stored in the storage unit.

  The program may be recorded on a computer-readable recording medium and may be installed from the recording medium in the storage unit of the control device 200. Examples of the computer-readable recording medium include a hard disk (HD), a flexible disk (FD), a compact disk (CD), a magnetic optical disk (MO), and a memory card.

<2. Configuration of heat treatment apparatus 5>
Next, the configuration of the heat treatment apparatus 5 will be described with reference to FIG. FIG. 2 is a diagram illustrating a configuration of the heat treatment apparatus 5.

  As shown in FIG. 2, the heat treatment apparatus 5 includes a chamber 501, a first holding unit 502, and a second holding unit 503.

  The chamber 501 is a container whose inside can be sealed, and accommodates the first holding unit 502 and the second holding unit 503. The chamber 501 includes a loading / unloading port 511 that is opened and closed by the gate valve 9 c, an intake port 512 for sucking the inside of the chamber 501, and a supply port 513 for supplying a processing gas into the chamber 501. An intake device 514 is connected to the intake port 512. A processing gas supply source 516 is connected to the supply port 513 through a valve 515.

  A processing gas for removing oxide films on the surfaces of the first substrate W1 and the second substrate W2 is supplied from the processing gas supply source 516 into the chamber 501. In this embodiment, formic acid gas is used as the processing gas, but the processing gas is not necessarily required to be formic acid.

  The first holding unit 502 includes an electrostatic chuck 521, a heating unit 522, and a cooling unit 523. The electrostatic chuck 521 is attached to the lower surface of the cooling unit 523 with the attracting surface facing downward, and the cooling unit 523 is attached to the ceiling surface of the chamber 501. The heating unit 522 is built in the electrostatic chuck 521.

  The electrostatic chuck 521 includes an internal electrode and a dielectric, and uses the electrostatic force generated by applying a voltage to the internal electrode to attract the first substrate W1 to the attracting surface. The heating unit 522 is, for example, a sheathed heater or a ceramic heater, and heats the first substrate W <b> 1 held by the electrostatic chuck 521 by heating the electrostatic chuck 521. The cooling unit 523 is configured by laminating a cooling jacket and a heat insulating material, for example.

  The second holding unit 503 includes an electrostatic chuck 531, a heating unit 532, and a cooling unit 533. The electrostatic chuck 531 is attached to the upper surface of the cooling unit 533 with the suction surface facing upward, and the cooling unit 533 is attached to the bottom surface of the chamber 501. The heating unit 532 is built in the electrostatic chuck 531. The configurations of the electrostatic chuck 531, the heating unit 532, and the cooling unit 533 are the same as the configurations of the electrostatic chuck 521, the heating unit 522, and the cooling unit 523 included in the first holding unit 502, and thus description thereof is omitted here. To do.

<3. Configuration of Joining Device 6>
Next, the structure of the joining apparatus 6 is demonstrated with reference to FIG. FIG. 3 is a diagram illustrating a configuration of the joining device 6.

  As shown in FIG. 3, the joining device 6 includes a frame structure 10, a first holding unit 20, a second holding unit 30, a chamber 40, a suspension mechanism 50, and a horizontal position adjusting unit 60. . In addition, the bonding apparatus 6 includes a pressure unit 70, a levelness adjustment unit 80, and an alignment mark detection unit 90.

  The chamber 40 is a container whose inside can be sealed, and houses the first holding unit 20 and the second holding unit 30. The chamber 40 is provided with an intake port 41 for sucking the inside of the chamber 40. An intake device 42 is connected to the intake port 41. The chamber 40 includes a first support member 11, a second support member 12, and a partition wall 45 provided between the first support member 11 and the second support member 12.

  The first holding unit 20 is a holding unit that holds the first substrate W <b> 1 and is provided on the lower surface of the first support member 11 of the frame structure 10 via the spacer 14. The first holding unit 20 includes a heating unit (not shown).

  The suspension mechanism 50 holds the first holding unit 20 in a state of being suspended from above. With the suspension mechanism 50, the first holding unit 20 is arranged with a gap between the first holding unit 20 and the spacer 14. The horizontal position adjustment unit 60 adjusts the horizontal position of the first holding unit 20. The horizontal position is the position and orientation in the horizontal direction. The configurations of the suspension mechanism 50 and the horizontal position adjustment unit 60 will be described later.

  The second holding unit 30 is a holding unit that holds the second substrate W <b> 2 and is provided so as to be able to contact with and separate from the upper surface of the second support member 12 of the frame structure 10. Further, the second holding unit 30 is disposed to face the lower side of the first holding unit 20. The second holding unit 30 includes a heating unit (not shown).

  The pressure unit 70 includes a fixed shaft 71 connected to the center of the second holding unit 30, a movable shaft 72 disposed on the same axis as the fixed shaft 71, and a drive unit that moves the movable shaft 72 in the vertical direction. 73. The pressurizing unit 70 uses the driving unit 73 to move the movable shaft 72 in the vertical direction and abuts against the fixed shaft 71. As a result, the second holding unit 30 approaches the first holding unit 20, and the second substrate W <b> 2 held by the second holding unit 30 is pressed against the first substrate W <b> 1 held by the first holding unit 20. .

  The level adjustment unit 80 is connected to the outer peripheral side of the second holding unit 30 with respect to the pressing unit 70. The level adjustment unit 80 is connected to the support plate 81, the plurality of first support members 82 having one end connected to the support plate 81, and the other end of the first support member 82. A plurality of drive units 83 that move along the direction, and a plurality of second support members 84 that are connected to the second holding unit 30 at one end and connected to the support plate 81 at the other end. The level adjustment unit 80 adjusts the height of the outer peripheral portion of the second holding unit 30 by individually moving the plurality of first support members 82 along the vertical direction using the plurality of driving units 83. Thereby, the level of the second holding unit 30 is adjusted. The pressing units 70 and the drive units 73 and 83 of the horizontality adjusting unit 80 are fixed to the third support member 13 of the frame structure 10.

  The alignment mark detection unit 90 includes an imaging unit 91 provided above the first support member 11 and a light source 92 provided below the second support member 12. The light source 92 is disposed outside the chamber 40 and irradiates the first substrate W1 and the second substrate W2 with light through the through holes formed in the second support member 12 and the second holding unit 30. The light emitted from the light source 92 is infrared light. The imaging unit 91 is disposed outside the chamber 40 and is provided in the first substrate W1 and the second substrate W2 through through holes formed in the first support member 11, the spacer 14, and the first holding unit 20. Capture the mark. The imaging result obtained by the imaging unit 91 is output to the control device 200.

  The bonding device 6 is configured as described above, and the inside of the chamber 40 is depressurized using the intake device 42 and the first substrate is used using the heating unit built in the first holding unit 20 and the second holding unit 30. W1 and the second substrate W2 are heated. Further, the joining device 6 adjusts the horizontal position of the first holding unit 20 using the horizontal position adjusting unit 60 based on the detection result of the alignment mark detecting unit 90. Further, the joining device 6 adjusts the level of the second holding unit 30 using the level adjustment unit 80. And the joining apparatus 6 presses the 1st board | substrate W1 and the 2nd board | substrate W2 using the pressurization part 70, and forms the superposition | polymerization board | substrate T. FIG. Note that the first substrate W1 and the second substrate W2 are joined by a metal provided on the first substrate W1 and a metal provided on the second substrate W2.

<4-1. Configuration of First Holding Unit 20 and its Periphery>
Next, the structure of the joining apparatus 6 mentioned above is demonstrated concretely. First, the configuration of the first holding unit 20 and its periphery will be described with reference to FIG. FIG. 4 is a diagram illustrating a configuration of the first holding unit 20 and its periphery.

  As shown in FIG. 4, the first holding unit 20 includes an electrostatic chuck 21, a heating unit 22, a cooling unit 23, and a plate 24. A suspension mechanism 50 is connected to the upper surface of the plate 24. A horizontal position adjusting unit 60 is connected to the outer peripheral portion of the lower surface of the plate 24. The cooling unit 23 has a smaller diameter than the plate 24 and is attached to the center of the lower surface of the plate 24. The electrostatic chuck 21 has a smaller diameter than the cooling unit 23 and is attached to the center of the lower surface of the cooling unit 23. The heating unit 22 is built in the electrostatic chuck 21. The electrostatic chuck 21 does not necessarily have a smaller diameter than the cooling unit 23.

  The electrostatic chuck 21 includes an internal electrode and a dielectric, and uses the electrostatic force generated by applying a voltage to the internal electrode to adsorb the first substrate W1 to the adsorption surface. The heating unit 22 is, for example, a sheathed heater or a ceramic heater, and heats the electrostatic chuck 21 to heat the first substrate W1 held on the electrostatic chuck 21.

  The cooling unit 23 is configured by laminating a cooling jacket and a heat insulating material, for example. Here, the configuration of the cooling unit 23 will be described with reference to FIG. FIG. 5 is a diagram illustrating a configuration of the cooling unit 23.

  As shown in FIG. 5, the cooling unit 23 includes a first cooling jacket 231, a second cooling jacket 232, and a heat insulating material 233. The first cooling jacket 231 is provided adjacent to the plate 24, the second cooling jacket 232 is provided adjacent to the first holding part 20, and the heat insulating material 233 includes the first cooling jacket 231 and the second cooling jacket. 232.

  The first cooling jacket 231 always operates during a series of joining processes. Thereby, the thermal influence on the plate 24, the imaging part 91, etc. can be suppressed. On the other hand, the second cooling jacket 232 operates only while the superposed substrate T is cooled after the first substrate W1 and the second substrate W2 are joined. Thereby, the superposition | polymerization board | substrate T can be cooled efficiently.

  The cooling units 523 and 533 included in the first holding unit 502 and the second holding unit 503 of the heat treatment apparatus 5 may have the same configuration as the cooling unit 23 described above.

  Returning to FIG. 4, the suspension mechanism 50 includes a main body 51, a wire 52, a support 53, an elastic member 54, a seal member 55, and a fixing portion 56.

  The main body 51 is a cylindrical member, and is disposed on the first support member 11. The wire 52 is inserted into the main body 51 and is also inserted into a through hole 58 that vertically penetrates the first support member 11 and the spacer 14 (corresponding to an example of the “upper member”). Reach inside. The support 53 is a columnar member inserted through the main body 51 and fixes the upper end of the wire 52 at the lower end. The elastic member 54 is a coil spring, for example, and elastically supports the support 53 with respect to the main body 51. The seal member 55 seals between the main body 51 and the support 53. The fixing portion 56 is provided at the lower end portion of the wire 52 and is fixed to the plate 24 of the first holding portion 20.

  The suspension mechanism 50 is configured as described above, and uses the wire 52 to suspend and hold the first holding unit 20 with a gap between the first holding unit 20 and the spacer 14. The joining device 6 includes a plurality of suspension mechanisms 50.

  The suspension mechanism 50 only needs to support the first holding unit 20 while allowing the first holding unit 20 to move in the vertical direction, and is not limited to the configuration exemplified above.

  The imaging unit 91 of the alignment mark detection unit 90 includes a first substrate W1 and a second substrate through a first support member 11, a spacer 14, a plate 24, a cooling unit 23, and a through hole 94 that penetrates the electrostatic chuck 21 up and down. The alignment mark provided in W2 is imaged.

  A transparent member 95 that closes the through hole 94 is provided on the upper portion of the first support member 11. The transparent member 95 is made of, for example, quartz glass. Such a transparent member 95 can maintain the hermeticity of the chamber 40 while ensuring the field of view of the imaging unit 91.

  The alignment mark detection unit 90 includes an elevating unit 93 that elevates and lowers the imaging unit 91. The elevating part 93 is provided on the upper part of the first support member 11. The elevating unit 93 includes a rail 931 that extends along the vertical direction, and a moving unit 932 that can move along the rail 931. The imaging unit 91 is attached to the moving unit 932 with the field of view directed vertically downward.

<4-2. Configuration of Horizontal Position Adjustment Unit 60>
Next, a specific configuration of the horizontal position adjustment unit 60 will be described with reference to FIGS. 6 and 7. FIG. 6 is a schematic side view showing the configuration of the horizontal position adjustment unit 60. FIG. 7 is a schematic bottom view showing the configuration of the horizontal position adjustment unit 60.

  As shown in FIGS. 6 and 7, the horizontal position adjustment unit 60 adjusts the position of the first holding unit 20 along the Y-axis direction (corresponding to an example of “first horizontal direction”). And a second adjustment unit 60X that adjusts the position of the first holding unit 20 along the X-axis direction (corresponding to an example of “second horizontal direction”).

  The second adjustment unit 60X includes two moving mechanisms 60X1 and 60X2 that apply a force along the X-axis direction to the plate 24 of the first holding unit 20. The two moving mechanisms 60X1 and 60X2 are arranged in parallel along the Y-axis direction, the moving mechanism 60X1 is arranged on the Y-axis negative direction side with respect to the center position of the electrostatic chuck 21, and the moving mechanism 60X2 is electrostatically It is arranged on the Y axis positive direction side with respect to the center position of the chuck 21. In addition, although the example in case the 2nd adjustment part 60X is provided with the two movement mechanisms 60X1 and 60X2 here is shown, the 2nd adjustment part 60X may be provided with the 3 or more movement mechanism.

  The moving mechanism 60 </ b> X <b> 1 is connected to the drive unit 61 fixed to the first support member 11 via the fixed plate 16, the shaft 62 moved along the X-axis direction by the drive unit 61, and connected to the shaft 62. A first moving member 63 that moves along the X-axis direction and a first guide portion 64 that supports the first moving member 63 so as to be slidable in the X-axis direction are provided.

  An opening 43 is provided at a position facing the moving mechanism 60X1 of the chamber 40, and the first moving member 63 of the moving mechanism 60X1 is inserted through the opening 43. A first flange portion 44 that protrudes to the inside of the opening 43 is provided at the opening end of the opening 43 on the outer side (the moving mechanism 60X1 side).

  The moving mechanism 60 </ b> X <b> 1 has a second flange portion 65 provided in the middle portion of the first moving member 63 and a shaft portion 66 extending in the vertical direction, and a shaft portion with respect to the tip portion of the first moving member 63. A second moving member 67 that is rotatably supported around the vertical axis via 66 and a second moving member 67 that is fixed to the outer peripheral portion of the lower surface of the plate 24 and supports the second moving member 67 so as to be slidable in the Y-axis direction. And a guide unit 68.

  The moving mechanism 60X1 includes a bellows 69 having one end connected to the first flange portion 44 and the other end connected to the second flange portion 65. With the bellows 69, the plate 24 provided inside the chamber 40 can be moved from the outside of the chamber 40 while ensuring the hermeticity of the chamber 40.

  As shown in FIG. 6, the moving mechanism 60X1 includes only the second flange portion 65, the shaft portion 66, the second moving member 67, and the second guide portion 68 disposed inside the chamber 40, and includes a driving portion 61, a shaft 62, The first moving member 63 and the first guide portion 64 are disposed outside the chamber 40. With such a configuration, the volume of the chamber 40 can be reduced, and the intake efficiency and the heating efficiency can be improved. Further, dust generation and the like in the chamber 40 can be suppressed.

  The moving mechanism 60X1 is configured as described above, and by moving the shaft 62 along the X-axis direction by the drive unit 61, the first moving member 63 connected to the shaft 62 is moved along the X-axis direction. The second moving member 67 pivotally supported by the first moving member 63 is moved along the X-axis direction. Thereby, a force along the X-axis direction can be applied to the plate 24. In addition, since the structure of the moving mechanism 60X2 is the same as that of the moving mechanism 60X1, description here is abbreviate | omitted.

  The second adjusting unit 60X moves the first holding unit 20 along the X-axis direction by moving the second moving member 67 of the moving mechanism 60X1 and the second moving member 67 of the moving mechanism 60X2 by the same distance. Can do.

  The horizontal position adjustment unit 60 includes a driven mechanism 60D. The driven mechanism 60D has the same configuration as the moving mechanisms 60X1 and 60X2 and the first adjusting unit 60Y except that the driven unit 61 and the shaft 62 are not provided. In the driven mechanism 60D, the second moving member 67 and the first moving member 63 are moved in accordance with the movement of the plate 24. The horizontal position adjustment unit 60 does not necessarily need to include the driven mechanism 60D.

  The first adjustment unit 60Y has the same configuration as the movement mechanism 60X1. The first adjusting unit 60Y is arranged in a direction in which the shaft 62 and the first moving member 63 extend along the Y-axis direction, and the drive unit 61 moves the shaft 62 along the Y-axis direction. The first moving member 63 connected to the shaft 62 is moved along the Y-axis direction, and the second moving member 67 supported by the first moving member 63 is moved along the Y-axis direction. Thereby, the plate 24 is moved along the Y-axis direction.

  Here, an example in which the first adjustment unit 60Y is arranged at a position where the axis of the shaft 62 and the first moving member 63 passes through the center of the plate 24 (center of the electrostatic chuck 21) is shown. The first adjusting unit 60Y may be disposed at a position where the axes of the shaft 62 and the first moving member 63 are shifted from the center of the plate 24 (center of the electrostatic chuck 21).

  The horizontal position adjusting unit 60 according to the present embodiment can rotate the first holding unit 20 around the vertical axis using the two moving mechanisms 60X1 and 60X2 and the first adjusting unit 60Y provided in the second adjusting unit 60X. it can. That is, the horizontal position adjustment unit 60 moves the second movement member 67 included in the movement mechanism 60X1 and the second movement member 67 included in the movement mechanism 60X2 in the X-axis direction with different movement amounts, and also includes the first adjustment unit 60Y. The first moving member 63 is moved along the Y-axis direction.

  Thereby, the horizontal position adjustment unit 60 can rotate the first holding unit 20 around the vertical axis without changing the center position of the first holding unit 20. Then, as the first holding unit 20 rotates around the vertical axis, the orientation of the first substrate W1 held by the first holding unit 20 in the horizontal direction is changed.

<4-3. Configuration of Second Holding Unit 30 and its Periphery>
Next, the configuration of the second holding unit 30 and its periphery will be described with reference to FIG. FIG. 8 is a diagram illustrating a configuration of the second holding unit 30 and its periphery.

  As shown in FIG. 8, the second holding unit 30 includes an electrostatic chuck 31, a heating unit 32, a cooling unit 33, and a plate 34. The plate 34 is provided so as to be able to contact and separate from the upper surface of the second support member 12. The cooling unit 33 is attached to the upper surface of the plate 34, and the electrostatic chuck 31 is attached to the upper surface of the cooling unit 33. The heating unit 32 is built in the electrostatic chuck 31.

  The electrostatic chuck 31 includes an internal electrode and a dielectric, and uses the electrostatic force generated by applying a voltage to the internal electrode to attract the second substrate W2 to the attracting surface. The heating unit 32 is, for example, a sheathed heater or a ceramic heater, and heats the electrostatic chuck 31 to heat the second substrate W2 held by the electrostatic chuck 31. The cooling unit 33 has the same configuration as the cooling unit 23 shown in FIG.

  Further, as shown in FIG. 8, the light source 92 of the alignment mark detection unit 90 is fixed to the second support member 12 via a fixing unit (not shown) with the optical axis directed vertically upward. The light source 92 irradiates the first substrate W1 and the second substrate W2 with light through the second support member 12, the plate 34, the cooling unit 33, and the through hole 96 penetrating the electrostatic chuck 31 vertically.

  A transparent member 97 that closes the through hole 96 is provided below the second support member 12. The transparent member 97 is made of, for example, quartz glass. Such a transparent member 97 can maintain the hermeticity of the chamber 40 without obstructing the optical path of the light source 92.

<4-4. Configuration of Pressurizing Unit 70 and Horizontalness Adjusting Unit 80>
Next, the structure of the pressurization part 70 and the horizontality adjustment part 80 is demonstrated with reference to FIG. FIG. 9 is a diagram illustrating the configuration of the pressurizing unit 70 and the horizontality adjusting unit 80.

  As shown in FIG. 9, the fixed shaft 71 of the pressure unit 70 has an upper end connected to the center of the lower surface of the plate 34. The fixed shaft 71 passes through the second support member 12, and a lower end portion thereof is located below the second support member 12. A flange portion 74 is provided at the lower end portion of the fixed shaft 71.

  The pressurizing unit 70 includes a bellows 75 that covers the outer periphery of the fixed shaft 71. The bellows 75 has one end connected to the lower portion of the second support member 12 and the other end connected to the flange portion 74. With the bellows 75, the plate 34 provided inside the chamber 40 can be moved from the outside of the chamber 40 while ensuring the hermeticity of the chamber 40.

  The movable shaft 72 of the pressure unit 70 has a contact portion 721 that contacts the lower end surface of the fixed shaft 71. Here, the configuration of the contact portion 721 will be described with reference to FIG. FIG. 10 is a diagram illustrating a configuration of the contact portion 721.

  As shown in FIG. 10, the contact surface of the contact portion 721 with the fixed shaft 71 is a convex curved surface. On the other hand, the contact surface of the fixed shaft 71 with the contact portion 721 is a concave curved surface. With this configuration, the fixed shaft 71 can be pressed stably. The contact surface of the contact portion 721 with the fixed shaft 71 may be a concave curved surface, and the contact surface of the fixed shaft 71 with the contact portion 721 may be a convex curved surface.

  Moreover, the structure of the contact part 721 is not limited to said example. A modification of the contact portion 721 will be described with reference to FIG. FIG. 11 is a diagram illustrating a configuration of the contact portion 721 according to the modification.

  As shown in FIG. 11, the movable shaft 72 may include an elastic member 722 such as rubber on the contact surface of the contact portion 721 with the fixed shaft 71. In this case, each contact surface of the contact portion 721 and the fixed shaft 71 is a flat surface. Also with this configuration, the fixed shaft 71 can be stably pressed. The elastic member 722 may be provided on a contact surface with the contact portion 721 of the fixed shaft 71.

  The pressurizing unit 70 is configured as described above, and the second holding unit connected to the fixed shaft 71 by moving the movable shaft 72 vertically upward using the driving unit 73 to abut against the fixed shaft 71. The part 30 is moved closer to the first holding unit 20, and the second substrate W <b> 2 held by the second holding unit 30 is pressed against the first substrate W <b> 1 held by the first holding unit 20.

  Returning to FIG. 9, the configuration of the horizontality adjusting unit 80 will be described. The second strut member 84 of the levelness adjusting unit 80 has an upper end connected to the outer peripheral side of the second holding unit 30 rather than the pressurizing unit 70. The second support member 84 passes through the second support member 12, and its lower end is connected to the support plate 81.

  The levelness adjusting unit 80 includes a bellows 85 that covers the outer periphery of the second support member 84. The bellows 85 has one end connected to the lower part of the second support member 12 and the other end connected to the upper part of the support plate 81. With the bellows 85, the plate 34 provided inside the chamber 40 can be moved from the outside of the chamber 40 while ensuring the sealing property of the chamber 40.

  A load cell 86 is provided on the second support member 84. The load cell 86 is a pressure detection unit that detects a pressing force applied to the first substrate W1 and the second substrate W2 when the first substrate W1 and the second substrate W2 are pressed using the horizontality adjustment unit 80. The detection result of the load cell 86 is output to the control device 200.

  FIG. 12 is a view of the horizontality adjusting unit 80 as viewed from above. As shown in FIG. 12, the support plate 81 of the level adjuster 80 is a flat plate having a substantially triangular shape in plan view. The levelness adjusting unit 80 includes three first support members 82, three drive units 83, and three second support members 84.

  The three first support members 82 are connected to the apex portions of the support plate 81. The three drive parts 83 are each connected to the other end side of the first support member 82. The three second support members 84 are provided corresponding to the three first support members 82, and are connected to the inner peripheral side of the support plate 81 with respect to the corresponding first support members 82.

  The level adjustment unit 80 is configured as described above, and the three first support members 82 are individually moved along the vertical direction by using the three driving units 83, whereby the second holding unit 30. Adjust the level.

<4-5. Configuration of Alignment Mark Detection Unit 90>
Next, the configuration of the alignment mark detection unit 90 will be described with reference to FIGS. FIG. 13 is a diagram illustrating a configuration of the alignment mark detection unit 90. FIG. 14 is a diagram illustrating an example of the alignment mark M1 provided on the first substrate W1, and FIG. 15 is a diagram illustrating an example of the alignment mark M2 provided on the second substrate W2.

  As shown in FIG. 13, alignment marks M1 and M2 are formed in advance on the first substrate W1 and the second substrate W2. For example, as shown in FIG. 14, the alignment mark M1 has a cross shape. Further, as shown in FIG. 15, for example, the alignment mark M2 has a shape obtained by hollowing out the inside of a quadrangle into a cross. In the horizontal position adjusting process described later, the horizontal position of the first holding unit 20 is adjusted using the horizontal position adjusting unit 60, thereby matching the cross shape of the alignment mark M1 and the cross shape of the alignment mark M2.

  The light source 92 of the alignment mark detection unit 90 irradiates light from below the second holding unit 30 vertically upward. The light emitted from the light source 92 reaches the imaging unit 91 through the transparent member 97, the through hole 96, the second substrate W 2, the first substrate W 1, the through hole 94 and the transparent member 95. The imaging unit 91 of the alignment mark detection unit 90 images the alignment marks M1 and M2 via the transparent member 95 and the through hole 94. The alignment mark M2 is imaged through the alignment mark M1.

  Alignment marks M1 and M2 are formed at at least two locations on one end and the other end of first substrate W1 and second substrate W2. In addition, the bonding apparatus 6 includes one alignment mark detection unit 90 on each of one end side and the other end side of the first substrate W1 and the second substrate W2.

<5. Configuration of Electrostatic Chuck 521, 531, 21, 31>
Next, the configuration of the electrostatic chucks 521 and 531 included in the heat treatment apparatus 5 and the electrostatic chucks 21 and 31 included in the bonding apparatus 6 will be described with reference to FIG. FIG. 16 is a diagram illustrating the rated operating temperature range of the electrostatic chucks 521, 531, 21, and 31.

  In the bonding system 100 according to the present embodiment, the first substrate W1 and the second substrate W2 are heated from room temperature to the first temperature in the heat treatment apparatus 5, and then the first substrate W1 and the second substrate W2 are bonded in the bonding apparatus 6. After raising the temperature to a second temperature higher than the first temperature, the first substrate W1 and the second substrate W2 are bonded.

  The second temperature is, for example, a temperature at which the metal on the first substrate W1 and the metal on the second substrate W2 can be joined. In the bonding system 100 according to the present embodiment, the second temperature is, for example, 300 to 400 ° C. Moreover, 1st temperature is 150-250 degreeC, for example.

  Here, there is no electrostatic chuck that can appropriately hold a substrate in a wide temperature range from room temperature to about 400 ° C. at the present time. This is because the volume resistivity of the dielectric provided in the electrostatic chuck varies depending on the temperature.

  Therefore, in the bonding system 100 according to the present embodiment, two types of electrostatic chucks (electrostatic chucks 521, 531 and electrostatic chucks 21, 31) having different rated operating temperature ranges are used as the heat treatment apparatus 5 and the bonding apparatus 6, respectively. The first substrate W1 and the second substrate W2 are heated stepwise by the heat treatment apparatus 5 and the bonding apparatus 6. As a result, the temperature can be raised from room temperature to 300 to 400 ° C. while appropriately holding the first substrate W1 and the second substrate W2 with the electrostatic chuck, so that the high accuracy of the first substrate W1 and the second substrate W2 can be achieved. Can be realized. In addition, by performing the heat treatment of the first substrate W1 and the second substrate W2 between the heat treatment apparatus 5 and the bonding apparatus 6, throughput of a series of substrate processes can be improved.

  FIG. 16 shows the rated operating temperature range R1 of the electrostatic chucks 521 and 531 provided in the heat treatment apparatus 5 and the rated operating temperature range R2 of the electrostatic chucks 21 and 31 provided in the bonding apparatus 6. Here, the rated operating temperature range is a temperature range in which the electrostatic chuck can be operated properly, that is, a temperature range determined as a temperature range in which a leakage current, a decrease in adsorption force, or the like does not occur.

  As shown in FIG. 16, in the joining system 100 according to the present embodiment, as the electrostatic chucks 521 and 531 of the heat treatment apparatus 5, the one whose upper limit of the rated operating temperature range R1 is lower than the first temperature is used. The upper limit of the rated operating temperature range R1 is, for example, 200 ° C. Further, in the bonding system 100 according to the present embodiment, the electrostatic chucks 21 and 31 of the bonding apparatus 6 that have a lower limit of the rated operating temperature range R2 higher than the first temperature are used. The lower limit of the rated operating temperature range R2 is, for example, 270 ° C.

  As described above, in the bonding system 100 according to the present embodiment, the rated operating temperature range R1 of the electrostatic chucks 521 and 531 and the rated operating temperature range R2 of the electrostatic chucks 21 and 31 are separated from each other without overlapping. A first temperature exists between the rated operating temperature range R1 and the rated operating temperature range R2.

  As described above, there is no electrostatic chuck that covers a wide temperature range from room temperature to about 400 ° C. at the present time. Therefore, in addition to the heat treatment apparatus 5 provided with the electrostatic chucks 521 and 531 in the rated use temperature range R1, a heat treatment apparatus provided with an electrostatic chuck that includes the first temperature in the rated use temperature range is provided separately. It is conceivable to raise the temperature of the first substrate W1 and the second substrate W2 from room temperature to the first temperature using two heat treatment apparatuses. However, this may increase the manufacturing cost and decrease the throughput. On the other hand, the joining system 100 according to the present embodiment can prevent an increase in manufacturing cost and a decrease in throughput by being configured as described above.

  In the present embodiment, the first substrate W1 and the second substrate W2 are heated from room temperature in the heat treatment apparatus 5. However, the present invention is not limited to this. For example, in the heat treatment apparatus 5 preheated to the first temperature. A process of heating the first substrate W1 and the second substrate W2 to a first temperature is also conceivable. The configuration of the electrostatic chucks 521, 531, 21 and 31 in such a case will be described with reference to FIG. FIG. 17 is a diagram showing the rated operating temperature range of the electrostatic chucks 521, 531, 21, 31 according to a modification.

  As shown in FIG. 17, when the heat treatment apparatus 5 is preheated to the first temperature, the electrostatic chucks 521 and 531 of the heat treatment apparatus 5 have a lower limit that is higher than normal temperature and an upper limit that is within the rated operating temperature range. An electrostatic chuck having a rated operating temperature range R3 higher than the lower limit of R2 can be used.

<6. Specific Operation of Bonding System 100>
Next, a specific operation of the bonding system 100 will be described with reference to FIG. FIG. 18 is a flowchart showing a series of processing procedures executed in the joining system 100.

  As shown in FIG. 18, in the bonding system 100, first, the first transfer device 103 of the carry-in / out station 1 takes out the first substrate W <b> 1 from the cassette C <b> 1 mounted on the cassette mounting plate 101 and transfers it to the aligner 2. To do. The first substrate W1 is transported with the non-joint surface facing downward. Of the plate surfaces of the first substrate W1, the plate surface on the side where the electronic circuit is formed is a bonding surface, and the surface opposite to the bonding surface is a non-bonding surface.

  The first substrate W1 transferred to the aligner 2 is subjected to pre-alignment processing by the aligner 2 (step S101). For example, the aligner 2 detects the position of the orientation flat or notch formed on the first substrate W1, and performs a process of matching the detected orientation flat or notch position to a predetermined position.

  Subsequently, the aligner 2 performs a reversing process for reversing the front and back of the first substrate W1 (step S102). Thereby, the first substrate W1 is in a state where the non-bonding surface faces upward. Thereafter, the first substrate W <b> 1 is transferred from the aligner 2 to the load lock chamber 3 by the first transfer device 103, and transferred from the load lock chamber 3 to the heat treatment device 5 by the second transfer device 104 of the transfer chamber 4. The first substrate W1 is attracted and held by the electrostatic chuck 521 provided in the first holding unit 502 of the heat treatment apparatus 5 with the bonding surface facing downward.

  On the other hand, in the bonding system 100, the same process as the pre-alignment process described above is also performed on the second substrate W2 (step S103). That is, the first transport device 103 takes out the second substrate W2 from the cassette C2 placed on the cassette placement plate 101 and transports it to the aligner 2. At this time, the second substrate W2 is transported with the non-joint surface facing downward. The second substrate W <b> 2 transferred to the aligner 2 is subjected to pre-alignment processing by the aligner 2.

  Thereafter, the second substrate W2 is transferred from the aligner 2 to the load lock chamber 3 by the first transfer device 103, and is transferred from the load lock chamber 3 to the heat treatment device 5 by the second transfer device 104. The second substrate W2 is attracted and held by the electrostatic chuck 531 provided in the second holding unit 503 of the heat treatment apparatus 5 with the bonding surface facing upward. Note that the order of steps S101 to S103 does not necessarily need to be this order.

  Subsequently, in the bonding system 100, a pre-heat treatment for heating the first substrate W1 and the second substrate W2 in advance is performed prior to the bonding process (step S104). In the pre-heat treatment, the first substrate W1 and the second substrate W2 are heated from room temperature to the first temperature using the heating units 522 and 532 provided in the first holding unit 502 and the second holding unit 503, respectively. The temperature rising rate in the pre-heat treatment is, for example, 10 ° C./min. The load lock chamber 3, the transfer chamber 4, and the heat treatment apparatus 5 are maintained at a medium vacuum of about 10 to 20 Pa.

  Subsequently, gas processing is performed in the heat treatment apparatus 5 (step S105). In such gas processing, formic acid gas is supplied from the processing gas supply source 516 into the chamber 501. Thereby, the oxide film on the surface of the metal provided on each of the first substrate W1 and the second substrate W2 is removed. Thereafter, the first substrate W1 and the second substrate W2 are taken out from the heat treatment apparatus 5 by the second transfer apparatus 104, and the first holding part 20 of the bonding apparatus 6 is placed with the bonding surface facing downward. The second substrate W2 is held by the second holding unit 30 of the bonding apparatus 6 with the bonding surface facing upward. At this time, the inside of the chamber 40 of the bonding apparatus 6 is maintained at a medium vacuum of about 10 to 20 Pa, like the load lock chamber 3, the transfer chamber 4 and the heat treatment apparatus 5. For this reason, until the first substrate W1 and the second substrate W2 after the gas treatment are bonded in the bonding apparatus 6, an oxide film is formed on the surface of the metal provided on each of the first substrate W1 and the second substrate W2. It can be prevented from being formed. The gas treatment is performed, for example, at 200 to 250 ° C. in the pre-heat treatment shown in step S104.

  As described above, in the bonding system 100, since the gas treatment is performed in the heat treatment apparatus 3 in a state where the heat treatment apparatus 3 and the transfer chamber 4 are shut off by the gate valve 9c, contamination of the transfer chamber 4 due to the processing gas is prevented. be able to.

  Subsequently, in the joining system 100, joining processing is performed (step S106). In such a bonding process, the bonding apparatus 6 performs a process of bonding the first substrate W1 and the second substrate W2. A specific processing procedure of the joining process will be described later.

  Subsequently, in the joining system 100, an unloading process is performed (step S107). In the carry-out process, the second transfer device 104 in the transfer chamber 4 takes out the superposed substrate T from the bonding device 6 and places it on the delivery section of the load lock chamber 3. The superposition | polymerization board | substrate T mounted in the delivery part is cooled from 200 degreeC to room temperature by the delivery part (cooling plate). Thereafter, the first transfer device 103 of the loading / unloading station 1 takes out the superposed substrate T from the load lock chamber 3 and stores it in the cassette C3 mounted on the set mounting plate 101. As a result, a series of processing ends.

  As described above, in the bonding system 100, after the superposed substrate T is cooled to a predetermined temperature (200 ° C. in this case) higher than room temperature in the bonding apparatus 6, the superposed substrate T is brought to room temperature at the delivery portion of the load lock chamber 3. It was decided to cool. Therefore, compared with the case where the temperature of the superposition | polymerization board | substrate T is cooled to room temperature in the joining apparatus 6, the processing time (tact time) in the joining apparatus 6 can be shortened.

<Joint treatment procedure>
Next, a specific processing procedure of the joining process in step S106 will be described with reference to FIGS. FIG. 19 is a flowchart illustrating the processing procedure of the joining process. 20 to 22 are diagrams illustrating an operation example of the levelness adjustment processing. 23 to 25 are diagrams illustrating an operation example of the horizontal position adjustment process. FIG. 26 is a diagram illustrating an operation example of the temporary pressurizing process. FIG. 27 is a diagram illustrating an operation example of the pressurizing process. 20 to 22, 26, and 27, the alignment mark detection unit 90 is omitted.

  As shown in FIG. 19, the bonding apparatus 6 is held by the first substrate W <b> 1 and the second holding unit 30 held by the first holding unit 20 using the heating units 22 and 32 (see FIGS. 4 and 8). The temperature rise of the second substrate W2 thus started is started (step S201). In addition, the 1st holding | maintenance part 20 and the 2nd holding | maintenance part 30 are the states heated previously by the heating parts 22 and 32 to 1st temperature, and the joining apparatus 6 is 1st holding | maintenance part 20 and 2nd holding | maintenance. After holding the first substrate W1 and the second substrate W2 by the unit 30, the temperature of the first holding unit 20 and the second holding unit 30 is increased from the first temperature to the second temperature.

  Subsequently, the joining device 6 decompresses the inside of the chamber 40 by using the intake device 42 (step S202). The inside of the chamber 40 is set to a pressure lower than that of the load lock chamber 3, the transfer chamber 4, and the heat treatment apparatus 5, in other words, a high degree of vacuum. For example, in the bonding system 100, the load lock chamber 3, the transfer chamber 4, and the heat treatment apparatus 5 are set to a medium vacuum of about 10 to 20 Pa, whereas the inside of the chamber 40 of the bonding apparatus 6 is 0.005 Pa or less. Set to high vacuum.

  Subsequently, the bonding apparatus 6 performs a leveling adjustment process for adjusting the leveling of the second holding unit 30 before the temperatures of the first substrate W1 and the second substrate W2 reach the second temperature (step S203). ).

  In the leveling adjustment process, the joining device 6 raises the second holding unit 30 by using the three driving units 83 (see FIG. 12) of the leveling adjustment unit 80 as shown in FIG. The second substrate W2 held by the holding unit 30 is brought into contact with the first substrate W1 held by the first holding unit 20. The detection result of each load cell 86 at this time is output to the control device 200.

  Subsequently, as illustrated in FIG. 21, the bonding apparatus 6 lowers the second holding unit 30 using the three driving units 83 of the horizontality adjusting unit 80. Further, the control device 200 determines the driving amount of each driving unit 83, that is, the moving amount of each second support member 84, according to the detection result of the load cell 86 described above. And the joining apparatus 6 drives the drive part 83 separately according to the drive amount determined by the control apparatus 200, and adjusts the level of the 2nd holding | maintenance part 30. FIG.

  For example, it is assumed that the pressure detected by the right load cell 86 out of the two load cells 86 shown in FIG. 21 is larger than the pressure detected by the left load cell 86. In this case, it is conceivable that the right side of the second holding unit 30 is in contact with the first holding unit 20, that is, the right side of the second holding unit 30 is inclined upward.

  Therefore, as illustrated in FIG. 22, for example, the joining device 6 drives only the left drive unit 83 to raise only the left second support member 84 and raises the left side of the second holding unit 30. Thereby, the 2nd holding | maintenance part 30 can be leveled. Note that the joining device 6 may repeat the above-described leveling adjustment process until the difference in pressure detected by each load cell 86 falls within a predetermined range.

  As described above, according to the joining system 100 according to the present embodiment, the horizontality of the second holding unit 30 is adjusted using the horizontality adjusting unit 80, so that the first holding unit 20 of the second holding unit 30 can be adjusted. Therefore, the first substrate W1 and the second substrate W2 can be bonded with high accuracy. In the bonding system 100 according to the present embodiment, before the temperatures of the first substrate W1 and the second substrate W2 reach the second temperature, that is, the metal on the first substrate W1 and the metal on the second substrate W2. Before reaching the temperature at which the bonding can be performed, the horizontality adjustment processing for adjusting the horizontality of the second holding unit 30 is performed. Thereby, it is possible to prevent the first substrate W1 and the second substrate W2 from being joined when the second substrate W2 is once brought into contact with the first substrate W1 in the leveling adjustment process.

  Subsequently, the joining device 6 performs a horizontal position adjustment process for adjusting the horizontal position of the first holding unit 20 (step S204).

  First, as illustrated in FIG. 23, the bonding apparatus 6 moves the imaging unit 91 using the elevating unit 93 of the alignment mark detection unit 90, and only the first substrate W <b> 1 out of the first substrate W <b> 1 and the second substrate W <b> 2. Is positioned within the depth of field D of the imaging unit 91. In this state, the bonding apparatus 6 images the alignment marks M1 and M2 provided on the first substrate W1 and the second substrate W2. As a result, an image in which the alignment mark M1 is in focus and the alignment mark M2 is not in focus is obtained. The image data of this image is output to the control device 200. The control device 200 detects the alignment mark M1 by performing edge detection on the acquired image data.

  Subsequently, as shown in FIG. 24, the bonding apparatus 6 moves the imaging unit 91 using the elevating unit 93 of the alignment mark detection unit 90, so that the second substrate W <b> 2 out of the first substrate W <b> 1 and the second substrate W <b> 2. Only within the depth of field D of the imaging unit 91. In this state, the bonding apparatus 6 images the alignment marks M1 and M2 provided on the first substrate W1 and the second substrate W2. As a result, an image in which the alignment mark M2 is in focus and the alignment mark M1 is not in focus is obtained. The image data of this image is output to the control device 200. The control device 200 detects the alignment mark M2 by performing edge detection on the acquired image data.

  And the control apparatus 200 makes the horizontal position adjustment part 60 perform the adjustment process which adjusts the position and direction in the horizontal direction of the 1st holding | maintenance part 20 based on the detection result of alignment mark M1, M2. Specifically, the control unit 200 controls the horizontal position adjustment unit 60 so that the position of the cross shape (see FIG. 14) of the alignment mark M1 matches the position of the cross shape (see FIG. 15) of the alignment mark M2. Then, the position and orientation of the first holding unit 20 in the horizontal direction are adjusted.

  The horizontal position adjustment unit 60 uses the first adjustment unit 60Y and the second adjustment unit 60X to move the first holding unit 20 in the horizontal direction or rotate it around the vertical axis. As a result, the misalignment between the first substrate W1 and the second substrate W2 caused mainly by the transport error by the first transport device 103 or the second transport device 104 is eliminated (first adjustment process).

  As described above, in the bonding system 100 according to the present embodiment, only the first substrate W1 of the first substrate W1 and the second substrate W2 is positioned within the depth of field D and only the second substrate W2. The imaging unit 91 is caused to execute imaging processing for imaging the alignment marks M1 and M2 in each of the states positioned within the depth of field D. In the joining system 100 according to the present embodiment, the horizontal position adjustment unit 60 is caused to perform adjustment processing for adjusting the position of the first holding unit 20 in the horizontal direction based on the imaging result of the imaging unit 91.

  Thereby, an image focused only on the alignment mark M1 and an image focused only on the alignment mark M2 can be obtained, respectively, and the alignment marks M1 and M2 can be appropriately detected using these images. it can. In other words, it is possible to prevent erroneous detection of the alignment marks M1 and M2 by using an image in which both the alignment marks M1 and M2 are in focus.

  In the bonding system 100 according to the present embodiment, in the imaging process, the lifting / lowering unit 93 of the alignment mark detection unit 90 is controlled to raise or lower the imaging unit 91, whereby the first substrate W1 is moved to the depth of field D. And the state where the second substrate W2 is positioned within the depth of field D are switched. Accordingly, for example, the first substrate W1 is moved within the depth of field D by moving the first holding unit 20 and the second holding unit 30, and the second substrate W2 is moved within the depth of field D. Compared to the case where the first holding unit 20 and the second holding unit 30 are adjusted, it is possible to maintain the horizontal position and level after the adjustment, as compared with the case where the first holding unit 20 and the second holding unit 30 are switched.

  In the bonding system 100 according to the present embodiment, the imaging unit 91 that images the alignment marks M1 and M2 provided on one end side of the first substrate W1 and the second substrate W2, and the first substrate W1 and the second substrate W2. And an imaging unit 91 that images the alignment marks M1 and M2 provided on the other end side (see FIG. 4). And in the joining system 100 which concerns on this embodiment, by performing the adjustment process mentioned above based on the imaging result of these two imaging parts 91, especially the direction in the horizontal direction of the 1st holding | maintenance part 20 is adjusted accurately. be able to.

  Thereafter, as illustrated in FIG. 25, the bonding apparatus 6 raises the second holding unit 30 using the level adjustment unit 80 to bring the second substrate W <b> 2 close to the first substrate W <b> 1. In this state, the joining apparatus 6 performs the adjustment process again using the image data used for the first adjustment process (second adjustment process).

  Thus, in the joining system 100 according to the present embodiment, the horizontality adjustment is performed after the imaging process and the adjustment process are performed in a state where the second holding unit 30 is located at the first position away from the first holding unit 20. The part 80 is controlled to move the second holding unit 30 to the second position closer to the first holding unit 20 than the first position, and then the second holding unit 30 is located at the second position. Thus, the adjustment process is executed again. As a result, even if the second holding unit 30 is misaligned when the second substrate W2 is brought closer to the first substrate W1 after the first adjustment processing, the misalignment is eliminated by the second adjustment processing thereafter. be able to. In other words, by performing the adjustment process in a state where the first substrate W1 and the second substrate W2 are as close as possible, it is possible to reduce as much as possible the positional deviation associated with the subsequent raising of the second holding unit 30. Can do.

  In the joining system 100 according to this embodiment, a gap is provided between the first holding unit 20 and the spacer 14 immediately above (see FIG. 4). For this reason, even if the 1st holding | maintenance part 20 moves by a horizontal position adjustment process, friction does not arise between the 1st holding | maintenance part 20 and the spacer 14. FIG. Therefore, it is possible to prevent dust from being generated due to friction between the first holding unit 20 and the spacer 14.

  Here, an example in which the second adjustment process is performed after the second substrate W2 is moved to the second position has been described, but the bonding apparatus 6 moves the second holding unit 30 to the second position. You may perform a 2nd adjustment process continuously, making it raise.

  The joining device 6 continues to image the alignment marks M1 and M2 using the imaging unit 91 even after the horizontal position adjustment process, so that the first pressurization process (step S205) and the main pressurization process (step S206) in the subsequent stage are performed. The presence / absence of positional deviation between the first substrate W1 and the second substrate W2 can be monitored. In addition, in the temporary pressurizing process and the main pressurizing process, the control device 200 performs the temporary pressurizing process or the main pressurizing process when it is determined that the deviation amount between the alignment mark M1 and the alignment mark M2 exceeds the threshold value. It may be canceled or an alarm may be output to notify the worker.

  Subsequently, the bonding apparatus 6 performs a temporary pressurizing process (step S205). Specifically, as illustrated in FIG. 26, the bonding apparatus 6 raises the second holding unit 30 by using the horizontality adjusting unit 80 to bring the second substrate W2 into contact with the first substrate W1 and the second substrate W1. The substrate W2 is pressed against the first substrate W1 with a first pressing force. The first pressing force is, for example, 12 kN.

  Subsequently, the bonding apparatus 6 performs the main pressurizing process (Step S206). Specifically, as illustrated in FIG. 27, the bonding apparatus 6 uses the pressurizing unit 70 to press the second substrate W2 against the first substrate W1 with the second pressing force. The second pressing force is, for example, 40 to 60 kN. Thereby, the 1st substrate W1 and the 2nd substrate W2 are joined, and superposition substrate T is formed.

  Thus, in the joining system 100 according to the present embodiment, the pressurizing unit 70 is used in a state where the second substrate W2 is pressed against the first substrate W1 by the first pressing force using the horizontality adjusting unit 80. The second substrate W2 is pressed against the first substrate W1 with a second pressing force larger than the first pressing force. Thereby, the position shift of the 1st substrate W1 and the 2nd substrate W2 at the time of this pressurization processing is prevented. Therefore, according to the joining system 100 according to the present embodiment, the joining accuracy can be improved.

  Further, as described above, in the joining system 100 according to this embodiment, the first holding unit 20 is held in a state of being suspended by the suspension mechanism 50 (see FIG. 4). Therefore, when a pressing force is applied to the first holding unit 20 in the temporary pressurizing process and the main pressurizing process, the first holding unit 20 moves upward and comes into contact with the spacer 14 immediately above. As a result, the pressing force applied to the first holding unit 20 is transmitted to the spacer 14 and the first support member 11 directly above. On the other hand, the suspension mechanism 50 causes the wire 52 to be loosened when the first holding unit 20 is raised. Therefore, the pressing force applied to the first holding unit 20 is not transmitted to the suspension mechanism 50.

  Thus, according to the joining system 100 which concerns on this embodiment, it can make it difficult to apply a load with respect to the mechanism which supports the 1st holding | maintenance part 20 in the state which can move to a horizontal direction.

  Subsequently, the bonding apparatus 6 lowers the temperature of the superposed substrate T at a predetermined temperature decrease rate (step S207). Then, the joining device 6 lowers the movable shaft 72 of the pressurizing unit 70 after the temperature of the superposed substrate T is lowered to a predetermined temperature (for example, 200 ° C.), and uses the horizontality adjusting unit 80 to perform the second holding unit. 30 is lowered to complete the joining process.

  As described above, the bonding system 100 according to the present embodiment includes the heat treatment apparatus 5 and the bonding apparatus 6. The heat treatment apparatus 5 includes a first holding unit 502 that holds the first substrate W1 by electrostatic adsorption force, a second holding unit 503 that holds the second substrate W2 by electrostatic adsorption force, a first substrate W1, and a second substrate W2. Heating sections 522 and 532 (corresponding to an example of “first heating section”). The bonding apparatus 6 includes a first holding unit 20 (corresponding to an example of a “third holding unit”) that holds the first substrate W1 by electrostatic adsorption force, and a second holding that holds the second substrate W2 by electrostatic adsorption force. Unit 30 (corresponding to an example of a “fourth holding unit”), heating units 22 and 32 (“second heating unit”) that heat the first substrate W1 and the second substrate W2 to a second temperature higher than the first temperature. The pressure unit 70 presses the first substrate W1 and the second substrate W2 by relatively bringing the first holding unit 20 and the second holding unit 30 closer to each other.

  Therefore, according to the joining system 100 according to the present embodiment, the joining accuracy can be improved.

  In the embodiment described above, as a series of substrate processing performed by the bonding system 100, the first substrate W1 and the second substrate W2 are heated and heated in the pre-heat treatment (step S104) and the bonding processing (step S106). The case has been described as an example. However, the method for heating the first substrate W1 and the second substrate W2 is not limited to the above example.

  For example, the pre-heat treatment (step S104) may be a process of heating the first substrate W1 and the second substrate W2 at a constant temperature. In this case, the 1st holding | maintenance part 502 and the 2nd holding | maintenance part 503 should just be heated to 1st temperature previously. Also, the bonding process (step S106) may be a process of heating the first substrate W1 and the second substrate W2 at a constant temperature. In this case, the 1st holding | maintenance part 20 and the 2nd holding | maintenance part 30 should just be heated to 2nd temperature previously.

  In this manner, in the pre-heat treatment (step S104) and the bonding process (step S106), the first substrate W1 and the second substrate W2 are heated by heating the first substrate W1 and the second substrate W2 at a constant temperature. Compared with the case of heating, the time required for heating can be shortened.

  In the bonding system 100, the first substrate W1 and the second substrate W2 may be heated at a constant temperature in the pre-heat treatment, and then the first substrate W1 and the second substrate W2 may be heated and heated in the bonding process. In the bonding system 100, the first substrate W1 and the second substrate W2 may be heated and heated in the pre-heat treatment, and then the first substrate W1 and the second substrate W2 may be heated at a constant temperature in the bonding process. In the bonding system 100, the first substrate W1 and the second substrate W2 may be heated at a constant temperature in the pre-heat treatment, and then the first substrate W1 and the second substrate W2 may be heated at a constant temperature in the bonding process.

  Further, in the embodiment described above, one of the first substrate W1 and the second substrate W2 is positioned within the depth of field of the imaging unit 91, and the other of the first substrate W1 and the second substrate W2. The example in the case of performing the imaging process which images the alignment marks M1 and M2 in each of the state in which the imaging unit 91 is positioned within the depth of field has been described. However, the imaging process is not limited to the above example. For example, in the bonding system 100, an imaging process of imaging the alignment marks M1 and M2 in a state where both the first substrate W1 and the second substrate W2 are positioned within the depth of field of the imaging unit 91 may be performed.

  Moreover, although embodiment mentioned above demonstrated the example in case the pressurization part 70 moves the 2nd holding | maintenance part 30 to a perpendicular direction, the pressurization part 70 moves the 1st holding | maintenance part 20 to a perpendicular direction. It may be a thing. In the embodiment described above, the example in which the horizontal position adjusting unit 60 adjusts the horizontal position of the first holding unit 20 has been described. However, the horizontal position adjusting unit 60 determines the horizontal position of the second holding unit 30. You may adjust. In the above-described embodiment, an example in which the first holding unit 20 is disposed above the second holding unit 30 has been described. However, the first holding unit 20 is disposed below the second holding unit 30. May be. In the above-described embodiment, an example in which the imaging unit 91 is disposed above the first support member 11 and the light source 92 is disposed below the second support member 12 has been described. The imaging unit 91 may be disposed below the second support member 12 and disposed above the first support member 11.

  Further effects and modifications can be easily derived by those skilled in the art. Thus, the broader aspects of the present invention are not limited to the specific details and representative embodiments shown and described above. Accordingly, various modifications can be made without departing from the spirit or scope of the general inventive concept as defined by the appended claims and their equivalents.

W1 1st board | substrate W2 2nd board | substrate T Superposition | polymerization board | substrate 5 Heat processing apparatus 6 Joining apparatus 20 1st holding | maintenance part 30 2nd holding | maintenance part 40 Chamber 50 Suspension mechanism 60 Horizontal position adjustment part 70 Pressurization part 80 Horizontalness adjustment part 90 Alignment mark Detection unit 100 Joining system

Claims (8)

Heating a first holding portion for holding the first substrate by an electrostatic attraction force, a second holding portion for holding the second substrate by an electrostatic attraction force, the first substrate and the second substrate to a first temperature A heat treatment apparatus having a first heating unit to perform,
The first holding part and the second holding part have different rated operating temperature ranges, and the third holding part that holds the first substrate by electrostatic attraction force, the first holding part and the second holding part, and the rated A working temperature range is different, and a fourth holding unit that holds the second substrate by electrostatic attraction force, and a first temperature that heats the first substrate and the second substrate to a second temperature higher than the first temperature. comprising a second heating section, and a junction device having a pressure portion for pressing said third holding portion and the fourth the first substrate and the second substrate by relatively approaching the holding portion,
The bonding system, wherein the first substrate and the second substrate heated to the first temperature by the heat treatment apparatus are heated to the second temperature by the bonding apparatus . A process of raising the temperature of the first substrate and the second substrate from room temperature to the first temperature is executed by the heat treatment apparatus, and then the temperature of the first substrate and the second substrate is raised to the second temperature. A control unit that causes the joining apparatus to execute processing to be performed,
The upper limit of the rated use temperature range of the first holding unit and the second holding unit is lower than the lower limit of the rated use temperature range of the third holding unit and the fourth holding unit. The joining system described. The upper limit of the rated use temperature range of the first holding unit and the second holding unit is lower than the first temperature,
The joining system according to claim 2, wherein a lower limit of a rated use temperature range of the third holding part and the fourth holding part is higher than the first temperature. A process of heating the first substrate and the second substrate at the first temperature is executed by the heat treatment apparatus, and thereafter a process of raising the temperature of the first substrate and the second substrate to the second temperature. A control unit to be executed by the bonding apparatus;
The lower limit of the rated operating temperature range of the first holding part and the second holding part is higher than normal temperature,
The upper limit of the rated use temperature range of the first holding unit and the second holding unit is higher than the lower limit of the rated use temperature range of the third holding unit and the fourth holding unit. The joining system described. The heat treatment apparatus comprises:
A chamber accommodating the first holding part and the second holding part and capable of sealing the inside;
The bonding system according to claim 1, further comprising: a gas supply unit configured to supply a processing gas into the chamber. A loading / unloading station on which the first substrate and the second substrate are placed;
A transfer chamber adjacent to the heat treatment apparatus and the bonding apparatus, in which a substrate transfer apparatus for transferring the first substrate and the second substrate to the heat treatment apparatus and the bonding apparatus is disposed;
The joining system according to claim 1, further comprising a load lock chamber provided between the carry-in / out station and the transfer chamber. The transfer chamber and the heat treatment apparatus are:
Set to the first degree of vacuum,
The joining device includes:
The joining system according to claim 6, wherein the pressure is set to a second degree of vacuum lower than the first degree of vacuum. Heating a first holding portion for holding the first substrate by an electrostatic attraction force, a second holding portion for holding the second substrate by an electrostatic attraction force, the first substrate and the second substrate to a first temperature A heat treatment step of heating the first substrate and the second substrate to the first temperature using a heat treatment apparatus having a first heating unit that performs:
The first holding part and the second holding part have different rated operating temperature ranges, and the third holding part that holds the first substrate by electrostatic attraction force, the first holding part and the second holding part, and the rated A working temperature range is different, and a fourth holding unit that holds the second substrate by electrostatic attraction force, and a first temperature that heats the first substrate and the second substrate to a second temperature higher than the first temperature. using a second heating section, and a junction device having a pressure portion for pressing said first substrate by relatively closer to the third holding portion and the fourth holding part and the second substrate, wherein A bonding step of bonding the first substrate and the second substrate heated to the first temperature in a state of being heated to the second temperature in a heat treatment step .

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