JP6345308B1 - Resonator coupling structure and resonator stack - Google Patents

Abstract

An object of the present invention is to reduce the influence of the displacement of the coupling window of two resonators on the frequency characteristics of a resonator stack. A coupling structure according to the present disclosure includes a first dielectric, a first conductor layer and a second conductor layer facing each other with the first dielectric interposed therebetween, and the first dielectric and the first dielectric. A first resonator having a plurality of first conductor posts connected to one conductor layer and the second conductor layer and arranged in a frame shape, a second dielectric, and sandwiching the second dielectric A third conductor layer and a fourth conductor layer facing each other, and a plurality of second conductor posts that penetrate the second dielectric and are connected to the third conductor layer and the fourth conductor layer and arranged in a frame shape And a second resonator having a first coupling window formed in the second conductor layer, wherein the second conductor layer and the third conductor layer are opposed to each other. Joining the second coupling window formed in the third conductor layer, the second conductor layer and the third conductor layer, and Comprising a conductive joint which surrounds the window and the second coupling window, a. [Selection] Figure 2

Description

  The present invention relates to a resonator coupling structure and a resonator stack.

  Conventional post-wall waveguides are manufactured at low cost using printed circuit board manufacturing techniques. Conductive layers are formed on both surfaces of the dielectric substrate of the post-wall waveguide, and a large number of arranged conductive posts (via holes) are formed so as to penetrate the dielectric substrate, and the conductive layers on both sides are formed by these conductive posts. Is conducting. The row of conductive posts functions as a pseudo conductor wall, and the region surrounded by the row of conductive posts and the conductor layer functions as a waveguide.

  Non-Patent Document 1 discloses a resonator direct-coupled filter using a post-wall waveguide. In this resonator direct-coupled filter, both ends of the waveguide between two conductive post rows are short-circuited by a post row for a pseudo short-circuit wall, and the waveguide is a post for a pseudo iris wall. By being squeezed by the row, the resonators on both sides of the iris wall are coupled through the inductive window of the iris wall. The conductive posts of the post row for the iris wall and the post row for the short-circuit wall are also formed on the dielectric substrate so as to penetrate the dielectric substrate.

  The technique described in Non-Patent Document 1 is a technique for coupling resonators formed on the same dielectric substrate. On the other hand, the technique described in Non-Patent Document 2 combines resonators formed on separate dielectric substrates. Specifically, a resonator surrounded by a post row is formed on two dielectric substrates, and these dielectric substrates are stacked, and a conductor layer of one dielectric substrate and a dielectric layer of the other dielectric substrate are stacked. The conductor layers are joined, and coupling windows are formed in these conductor layers, and these coupling windows face each other.

Yusuke Uemichi, Osamu Nukaga, Kei Nakamura, Xu Han, Ryouhei Hosono, Ning Guan1 and Shuhei Amakawa, “Compact and low-loss bandpass filter realized in silica-based post-wall waveguide for 60-GHz applications”, IEEE MTTS-S IMS , May 2015 Zhang Cheng Hao, Wei Hong, Xiao Ping Chen, Ji Xin Chen, Ke Wu and Tie Jun Cui, “Multilayered Substrate Integrated Waveguide (MSIW) Elliptic Filter”, IEEE Microwave and Wireless Components Letters, VOL. 15, NO. 2, February 2005

  By the way, Non-Patent Document 2 discloses how two dielectric substrates are stacked and how a conductor layer of one dielectric substrate and a conductor layer of the other dielectric substrate are joined. Absent. In the process of stacking two dielectric substrates and joining both conductor layers, the positions of both coupling windows may be misaligned, and the edges of the coupling window and the coupling window may not coincide. In that case, the frequency characteristics of the resonator stack change with the displacement of both coupling windows, and the designed characteristics are not achieved.

  Therefore, the present invention has been made in view of the above circumstances. An object of the present invention is to reduce the influence on the frequency characteristics of a stack formed by coupling the resonators even if the coupling windows of the two resonators stacked and coupled are displaced. .

A main invention for achieving the above object includes a first dielectric, a first conductor layer and a second conductor layer facing each other across the first dielectric, the first dielectric, and the first dielectric. A first resonator having a plurality of first conductor posts connected to one conductor layer and the second conductor layer and arranged in a frame shape, a second dielectric, and sandwiching the second dielectric A third conductor layer and a fourth conductor layer facing each other, and a plurality of second conductor posts penetrating the second dielectric and connected to the third conductor layer and the fourth conductor layer and arranged in a frame shape And a second resonator having a first coupling window formed in the second conductor layer, wherein the second conductor layer and the third conductor layer are opposed to each other. A second coupling window formed in the third conductor layer, and joining the second conductor layer and the third conductor layer to each other; A conductive joint surrounding the said the first coupling window second coupling window, said with to cover the second conductive layer, first dielectric made of resin that covers the first dielectric in the first binding within the window And a resin-made second dielectric film covering the third conductor layer and covering the second dielectric in the second coupling window, the first dielectric film comprising: A frame-like groove is formed to surround the first coupling window, and the conductive joint is joined to the second conductor layer through the groove, and the second dielectric film surrounds the second coupling window. In this resonator structure, a frame-like groove is formed, and the conductive joint is joined to the third conductor layer through the groove .

  Other characteristics of the present invention will be made clear by the description and drawings described later.

  According to some embodiments of the present invention, the displacement of the first coupling window and the second coupling window does not significantly affect the frequency characteristics of the stack formed by coupling the first resonator and the second resonator. .

FIG. 1 is a perspective view of a stack of a first resonator and a second resonator. FIG. 2 is an exploded perspective view of a stack of the first resonator and the second resonator. FIG. 3 is a sectional view of the coupling window of the first resonator and the second resonator and the surroundings thereof. FIG. 4 is a perspective view of a resonator stack provided with input / output ports. FIG. 5 is an exploded perspective view of the resonator stack shown in FIG. FIG. 6 is a perspective view of a resonator direct connection filter including resonators stacked in multiple stages. FIG. 7 is a graph showing frequency characteristics when the first resonator and the second resonator are joined by the conductive joint. FIG. 8 is a graph showing frequency characteristics when the first resonator and the second resonator are directly joined. FIG. 9 is a graph showing frequency characteristics for each size of the coupling opening of the conductive joint. FIG. 10 is a graph showing frequency characteristics for each thickness of the conductive joint. FIG. 11 is an X-ray photograph of a solder joint to which copper fine particles are added. FIG. 12 is an X-ray photograph of a solder joint to which copper fine particles are not added. FIG. 13 is an X-ray photograph of a solder joint to which copper fine particles are not added.

  At least the following matters will be apparent from the description and drawings described below.

A first dielectric, a first conductor layer and a second conductor layer facing each other with the first dielectric interposed therebetween, and penetrating the first dielectric and connected to the first conductor layer and the second conductor layer A first resonator having a plurality of first conductor posts arranged in a frame shape, a second dielectric, and a third conductor layer and a fourth conductor facing each other across the second dielectric A second resonator having a layer, and a plurality of second conductor posts that penetrate the second dielectric and are connected to the third conductor layer and the fourth conductor layer and arranged in a frame shape, The second conductor layer and the third conductor layer are coupled to face each other, the first coupling window formed in the second conductor layer, and the first conductor window formed in the third conductor layer. The two coupling windows, the second conductor layer, and the third conductor layer are joined to surround the first coupling window and the second coupling window. And conductive junction coupling structure of the resonator will be made clear with the.
With such a coupling structure, the positional deviation between the first coupling window and the second coupling window does not significantly affect the frequency characteristics of the stack formed by coupling the first resonator and the second resonator.

The conductive joint has solder.
Thereby, while being able to join a 2nd conductor layer and a 3rd conductor layer easily, the cost required for joining by an electroconductive junction part is low.

The conductive joint has copper particles dispersed in the solder using the solder as a base material.
Thereby, the solder easily wets the second conductor layer and the third conductor layer when the conductive joint portion is formed, and the conductive joint portion is formed well.

  The copper particles have a particle size of 15 to 25 μm.

  The coupling structure covers the second conductor layer, covers the first dielectric film made of resin that covers the first dielectric in the first coupling window, and the third conductor layer, A resin-made second dielectric film covering the second dielectric in the second coupling window, and the first dielectric film has a frame-shaped groove so as to surround the first coupling window The conductive joint is joined to the second conductor layer through the groove, and a frame-like groove is formed in the second dielectric film so as to surround the second coupling window. The conductive joint is joined to the second conductor layer.

A resonator stack comprising the coupling structure, the first resonator, and the second resonator, wherein the first resonator includes the first conductor layer, the second conductor layer, and the first resonator. A terminal for externally coupling an electric or magnetic field in a region surrounded by the conductor post, wherein the second resonator is surrounded by the third conductor layer, the fourth conductor layer, and the second conductor post; A terminal for externally coupling an electric or magnetic field in the region;
As a result, signals can be input and output to the first resonator and the second resonator.

=== Embodiment ===
Embodiments of the present invention will be described below with reference to the drawings. However, the embodiments described below are given various technically preferable limitations for carrying out the present invention, but the scope of the present invention is not limited to the following embodiments and illustrated examples.

FIG. 1 is a perspective view of a coupling structure 1 and a resonator stack 2 using the same, and FIG. 2 is an exploded perspective view of the resonator stack 2. 1 and 2 illustrate the X axis, the Y axis, and the Z axis as auxiliary lines representing directions. These X axis, Y axis and Z axis are orthogonal to each other.
The resonator stack 2 includes a first resonator 10, a second resonator 30 stacked on the first resonator 10, and a coupling structure 1 that couples the resonators 10 and 30. The coupling structure 1 includes a first resonator 10 and a second resonator via a first coupling window 71 provided in the first resonator 10 and a second coupling window 72 provided in the second resonator 30. 30 is coupled by an electric field or a magnetic field. First, the first resonator 10 and the second resonator 30 will be described.

  The first resonator 10 includes a first dielectric substrate 11, a first conductor layer 12, a second conductor layer 13, and a post row. Here, the post row refers to an arrangement of a plurality of columnar or cylindrical first conductor posts 21.

  The first dielectric substrate 11 is a rectangular flat plate made of quartz glass. A first conductor layer 12 is formed on one surface of the first dielectric substrate 11, and a second conductor layer 13 is formed on the other surface of the first dielectric substrate 11. The first conductor layer 12 and the second conductor layer 13 are opposed to each other with the first dielectric substrate 11 interposed therebetween, and are provided in parallel to each other. 1 and 2, both surfaces of the first dielectric substrate 11 are parallel to the X axis and the Y axis, and the thickness direction of the first dielectric substrate 11 is parallel to the Z axis.

  A plurality of first conductor posts 21 penetrate from one surface of the first dielectric substrate 11 to the other surface, and the first conductor layer 12 and the second conductor layer 13 are electrically connected by the first conductor posts 21. Yes. These first conductor posts 21 are metallized through holes or via holes.

  These first conductor posts 21 are arranged in a square frame shape or a rectangular frame shape. Specifically, among these first conductor posts 21, the conductor posts 21A are arranged at equal intervals, the conductor posts 21B are arranged at equal intervals so as to be parallel to the row of the conductor posts 21A, and the conductor posts 21C are arranged as conductor posts. The conductor posts 21A and 21B are arranged at equal intervals in the orthogonal direction between the rows of 21A and 21B, and the conductor posts 21D are parallel to the rows of the conductor posts 21C between the rows of the conductor posts 21A and 21B. They are arranged at equal intervals. Here, the direction of the rows of the conductor posts 21A and 21B is parallel to the Y axis, the negative direction of the Y axis is the row front, and the positive direction of the Y axis is the row rear. In such a case, the conductor posts 21C are arranged from the beginning of the row of conductor posts 21A to the beginning of the row of conductor posts 21B, and the conductor posts 21D are arranged from the end of the row of conductor posts 21A to the end of the row of conductor posts 21B. . Therefore, each row | line | column of conductor post 21A, 21B, 21C, 21D comprises the side of a square frame shape or a rectangular frame shape. The direction of the rows of the conductor posts 21C, 21D is parallel to the X axis, the negative direction of the X axis is the front of the row of the conductor posts 21C, 21D, and the positive direction of the X axis is the direction of the conductor posts 21C, 21D. Be behind the column.

  Further, one additional conductor post 22 is disposed in front of the head of the row of conductor posts 21A, and two additional conductor posts 23 are disposed behind the end of the row of conductor posts 21A. Similarly, additional conductor posts 24 and 25 are also arranged in front of the head and behind the tail of the row of conductor posts 21B, respectively. Further, one additional conductor post 26, 27 is disposed in front of the head and behind the end of the row of conductor posts 21C, respectively. These additional conductor posts 24 to 27 also penetrate the first dielectric substrate 11 and are electrically connected to the first conductor layer 12 and the second conductor layer 13.

  The row of conductor posts 21A functions as a pseudo conductor wall. The same applies to the row of conductor posts 21B, the row of conductor posts 21C, and the row of conductor posts 21D. An electromagnetic wave is confined in a rectangular parallelepiped region surrounded by the four pseudo conductor walls, the first conductor layer 12, and the second conductor layer 13, and an electromagnetic wave having a frequency determined by the size of the region resonates. The interval between the adjacent first conductor posts 21 is sufficiently shorter than the wavelength of the electromagnetic wave to be confined in the rectangular parallelepiped region, and is, for example, equal to or less than a quarter of the wavelength of the electromagnetic wave.

  The second resonator 30 includes a second dielectric substrate 31, a third conductor layer 32, a fourth conductor layer 33, a post row (arrangement of a plurality of second conductor posts 41), and additional conductor posts 42 to 47. The first resonator 10 and the second resonator 30 are configured identically, and the second dielectric substrate 31, the third conductor layer 32, the fourth conductor layer 33, the post row (a plurality of second conductors) of the second resonator 30. The arrangement of the post 41 and the additional conductor posts 42 to 47 are the first dielectric substrate 11, the first conductor layer 12, the second conductor layer 13, and the post row (arrangement of the plurality of first conductor posts 21) of the first resonator 10. ) And additional conductor posts 22 to 27 respectively.

  The resonators 10 and 30 as described above are stacked so that the second conductor layer 13 of the first resonator 10 and the third conductor layer 32 of the second resonator 30 face each other. In this state, the resonators 10 and 30 are coupled by the coupling structure 1. Hereinafter, the coupling structure 1 that couples the resonators 10 and 30 with the conductor layers 13 and 32 of the resonators 10 and 30 facing each other will be described in detail.

The coupling structure 1 includes a first coupling window 71, a second coupling window 72, a conductive joint 50, and the like.
The first coupling window 71 is formed in the second conductor layer 13 of the first resonator 10. The first coupling window 71 is a rectangular opening, the long side of the first coupling window 71 is parallel to the row of the conductor posts 21C and 21D, and the short side of the first coupling window 71 is the conductor posts 21A and 21B. Parallel to the columns. The first coupling window 71 may be a square opening.

  The first coupling window 71 is disposed inside the plurality of first conductor posts 21 arranged in a frame shape. The first coupling window 71 is arranged closer to the row of conductor posts 21C than the row of conductor posts 21D. As long as the position of the first coupling window 71 is inside the rectangular array of the first conductor posts 21, another position may be used.

  The second coupling window 72 is formed in the third conductor layer 32 of the second resonator 30. The second coupling window 72 is a rectangular opening like the first coupling window 71, and the long side of the second coupling window 72 is parallel to the row of the conductor posts 41 </ b> C and 41 </ b> D. The short side is parallel to the row of conductor posts 41A and 41B. The second coupling window 72 may be a square opening.

  The second coupling window 72 is disposed inside the square array of the second conductor posts 41. The second coupling window 72 is arranged closer to the row of conductor posts 41C than the row of conductor posts 41D. The position of the second coupling window 72 may be another position as long as it is inside the plurality of second conductor posts 41 arranged in a frame shape.

  The coupling windows 71 and 72 have the same shape and the same dimensions. If the coupling windows 71 and 72 are rectangular, the short sides of the coupling windows 71 and 72 are equal to each other, and the long sides are also equal to each other.

  The conductive junction 50 is sandwiched between the second conductor layer 13 of the first resonator 10 and the third conductor layer 32 of the second resonator 30. The second conductor layer 13 and the third conductor layer 32 are electrically connected to each other by being joined by the conductive joint portion 50.

  The conductive joint 50 is formed in a rectangular frame shape. Therefore, a coupling opening 51 is formed inside the conductive joint portion 50. The conductive junction 50 surrounds the first coupling window 71 of the first resonator 10 and the second coupling window 72 of the second resonator 30, and the coupling windows 71 and 72 are included in the coupling opening 51. The sides of the conductive joint 50 are substantially parallel to the sides of the coupling windows 71 and 72. In addition, as long as the coupling windows 71 and 72 are included in the coupling opening 51, the conductive joint portion 50 may be formed in a square frame shape, or may be formed in a circular frame shape. That is, the frequency characteristics of the resonator stack 2 are appropriate regardless of whether the coupling opening 51 is circular, square, or rectangular.

  In the coupling opening 51, the coupling windows 71 and 72 face each other, the long sides of the coupling windows 71 and 72 are substantially parallel to each other, and the short sides are also substantially parallel to each other. Therefore, the rectangular parallelepiped region surrounded by the pseudo conductor wall and the conductor layers 12 and 13 by the row of the first conductor posts 21 is connected via the first coupling window 71, the coupling opening 51, and the second coupling window 72. It is magnetically or electrically coupled to a rectangular parallelepiped region surrounded by the pseudo conductor walls and the conductor layers 32 and 33 by the row of the second conductor posts 41.

  The conductive joint 50 is composed of a base material made of solder (for example, SnAgCu-based, SnZnBi-based, SnCu-based, SnAgInBi-based or SnZnAl-based lead-free solder) and copper spherical fine particles dispersed in the base material. . An example of the composition of the base material of the conductive joint 50 is Sn-3.0Ag-0.5Cu, but is not limited thereto.

  Here, the conductive joint 50 is obtained by melting a mixed powder of solder fine particles (for example, a particle diameter of 15 to 25 μm) and copper fine particles (for example, a particle diameter of 15 to 25 μm) by heat treatment. Is obtained by solidifying. When the mixed powder of solder and copper is heated to a temperature lower than the melting point of copper, the copper fine particles are not melted and the solder fine particles are melted. The fine particles are dispersed.

  As shown in FIG. 3, the second conductor layer 13 of the first resonator 10 is covered with a dielectric film 61 except for a region where the conductive junction 50 is formed. The dielectric film 61 is formed with a frame-shaped groove 61a surrounding the first coupling window 71, and the conductive joint portion 50 is joined to the second conductor layer 13 through the groove 61a. The dielectric film 61 is also formed inside the first coupling window 71, and the surface of the first dielectric substrate 11 is covered with the dielectric film 61 in the first coupling window 71. Similarly, the third conductor layer 32 of the second resonator 30 is covered with the dielectric film 62, the surface of the second dielectric substrate 31 is covered with the dielectric film 62 inside the second coupling window 72, and the second The conductive joint 50 is joined to the third conductor layer 32 through a frame-like groove 62 a formed in the dielectric film 62 so as to surround the coupling window 72.

  The dielectric films 61 and 62 are made of resin passivation. When the second conductor layer 13 and the third conductor layer 32 are bonded by the conductive bonding portion 50, the molten conductive bonding portion 50 is difficult to get wet with the dielectric films 61 and 62. Therefore, the conductive joint 50 and the coupling opening 51 can be formed in the shape and size as designed.

<Effect>
In the above embodiment, the coupling opening 51 in the conductive junction 50 includes the coupling windows 71 and 72, and the conductive junction 50 surrounds the coupling windows 71 and 72, while the first resonator 10 has the first resonator 10. The two conductor layers 13 and the third conductor layer 32 of the second resonator 30 are joined by the conductive joint portion 50. Then, the second conductor layer 13 and the third conductor layer 32 are separated by the thickness of the conductive joint portion 50. Therefore, even if the coupling windows 71 and 72 are displaced in the plane direction from the position where the edges of the coupling windows 71 and 72 overlap, the first coupling window 71 is partially blocked by the third conductor layer 32. There is no. Further, the second coupling window 72 is not partially blocked by the second conductor layer 13. Therefore, even if the coupling windows 71 and 72 are displaced in the plane direction, the deviation does not significantly affect the frequency characteristics of the resonator stack 2 (see verification 1 described later). That is, even if the first resonator 10 and the second resonator 30 are joined by the conductive joint portion 50 without precise alignment of the first coupling window 71 and the second coupling window 72, there is an appropriate frequency characteristic. The manufactured resonator stack 2 can be manufactured.

  Further, if the coupling opening 51 in the conductive joint 50 includes the coupling windows 71 and 72, the size (long side and short side length) and shape of the coupling opening 51 are large in the frequency characteristics of the resonator stack 2. No effect (see Verification 2 below). Therefore, when the first resonator 10 and the second resonator 30 are joined by the conductive joint portion 50, the resonator stack 2 having an appropriate frequency characteristic can be obtained without precisely controlling the size and shape of the coupling opening 51. Can be manufactured.

  Further, the thickness of the conductive junction 50 from the first dielectric substrate 11 to the second dielectric substrate 31 does not significantly affect the frequency characteristics of the resonator stack 2 (see verification 3 described later). Therefore, when the first resonator 10 and the second resonator 30 are joined by the conductive joint 50, the resonator stack 2 having an appropriate frequency characteristic can be obtained without precisely controlling the thickness of the conductive joint 50. Can be manufactured.

  Since the conductive joint 50 is made of a mixed powder of solder fine particles and copper fine particles, the raw material cost is low. In addition, since the first resonator 10 and the second resonator 30 can be easily joined by the conductive joint portion 50 using conventional manufacturing equipment (solder printer, reflow machine, mounting machine, bonder, etc.). Its cost is low.

  When the copper fine particles are dispersed in the conductive joint portion 50, the solder tends to wet the second conductor layer 13 and the third conductor layer 32 when the conductive joint portion 50 is formed. Therefore, the conductive joint 50 is formed satisfactorily (see verification 4 described later).

  Since the dielectric films 61 and 62 made of passivation are formed in the coupling windows 71 and 72, solder does not get wet in the coupling windows 71 and 72 when the conductive joint portion 50 is formed. In addition, the conductive joint 50 can be accurately formed in the frame shape of the grooves 61 a and 62 a of the dielectric films 61 and 62.

<Modification>
As mentioned above, although the form for implementing this invention was demonstrated, the said embodiment is for making an understanding of this invention easy, and does not limit this invention to the said embodiment. Further, the above embodiments may be changed or improved without departing from the spirit of the present invention, and the present invention includes equivalents thereof. Several changes from the above embodiment will be described below, but some changes described below may be combined as much as possible.

(1) In the above embodiment, the first resonator 10 and the second resonator 30 are not provided with signal input / output terminals. On the other hand, the first resonator 10 and the second resonator 30 may be provided with terminals. For example, as shown in FIGS. 4 and 5, a plurality of integrated or continuous conductor posts in the row of conductor posts 21 are not provided (in the example shown in FIG. A window 29 is formed in the row of the conductor posts 21, and the windows 29 serve as signal input / output terminals. Similarly, a window 49 as a signal input / output terminal is formed in the row of conductor posts 41. The window 29 functions as a terminal for coupling an electric field or a magnetic field in a region surrounded by the row of the first conductor posts 21, the first conductor layer 12, and the second conductor layer 13 to the outside. The same applies to the window 49.

  If the first resonator 10 and the second resonator 30 are provided with input / output terminals (windows 29 and 49), the signal is filtered when the signal is propagated from one terminal to the other terminal. Therefore, the resonator stack 2 can be used as a resonator direct connection filter (for example, a bandpass filter).

  Instead of forming the windows 29 and 49 in the row of the conductor posts 21 and 41, an opening is formed in the first conductor layer 12 of the first resonator 10, and the fourth conductor layer 33 of the second resonator 30 is formed. Openings may be formed, and these openings may serve as signal input / output terminals.

(2) In the above embodiment, the two resonators 10 and 30 are stacked. On the other hand, as shown in FIG. 6, three or more resonators 110 configured in the same manner as the resonators 10 and 30 may be stacked (in FIG. 6, four resonators 110 are shown as an example. Are stacked). In this case, similarly to the case where the second conductor layer 13 of the first resonator 10 and the third conductor layer 32 of the second resonator 30 are joined by the conductive joint portion 50, the adjacent resonators 110 face each other. The conductor layers 112 and 113 are joined by the conductive joint 150. Further, similarly to the case where the resonators 10 and 30 are magnetically or electrically coupled via the coupling windows 71 and 72 and the coupling opening 51, adjacent resonators 110 are coupled to the coupling windows 115 and 116 and the coupling opening 151. It is magnetically or electrically coupled via Here, the coupling window 115 is formed in the first conductor layer 112 of the resonator 110, and the coupling window 116 is formed in the second conductor layer 113 of the resonator 110.

  Here, focusing on one resonator 110 other than the uppermost and lowermost stages, the coupling window 115 formed in the conductor layer 112 and the coupling window 116 formed in the conductor layer 113 are in the plane direction (the plane direction is The dielectric substrate 111 is arranged so as to be shifted in a direction perpendicular to the thickness direction of the dielectric substrate 111. Therefore, when paying attention to the plurality of conductive joints 150, the conductive joints 150 are alternately arranged so as to be shifted in the surface direction.

  Note that a plurality of conductor posts (not shown) are provided on the dielectric substrate 111 of the resonator 110 in the same manner that the conductor posts 21 to 27 are provided on the first dielectric substrate 11 of the first resonator 10. It has been. Similarly to the first resonator 10 and the second resonator 30 shown in FIGS. 4 and 5, input / output windows 129 are formed in the row of conductor posts of the uppermost and lowermost resonators 110. For example, the stack of the resonators 110 can be used as a resonator direct connection filter (for example, a bandpass filter).

(3) In the above embodiment, the conductive joint 50 is a solder joint having a solder base material and copper fine particles, but may be a solder joint that does not contain copper fine particles. The conductive joint 50 may be a solidified conductive paste (for example, silver paste) other than solder. Further, a frame-like conductive convex portion (for example, copper plating) grown by a plating method is formed between the conductive joint portion 50 and the second conductor layer 13 so as to be integrated with the second conductor layer 13. May be. Further, a frame-like conductive convex portion (for example, copper plating) grown by a plating method is formed between the conductive joint portion 50 and the third conductor layer 32 so as to be integrated with the third conductor layer 32. May be.

<Verification 1>
Hereinafter, the usefulness of the conductive joint 50 will be verified by simulation. The conditions in the following simulations are as shown in Table 1.

  When the second conductor layer 13 of the first resonator 10 and the third conductor layer 32 of the second resonator 30 are joined by the conductive joint portion 50, when a signal is input to the position α shown in FIG. The amplitude intensity of the output signal at position β was simulated. The result is shown in FIG. The solid line in FIG. 7 shows the simulation result when the edge of the first coupling window 71 and the edge of the second coupling window 72 coincide when viewed in the thickness direction of the dielectric substrates 11 and 31. The broken line in FIG. 7 indicates that the edge of the first coupling window 71 and the edge of the second coupling window 72 are displaced by a distance of 50 μm in the short side direction and the long side direction when viewed in the thickness direction of the dielectric substrates 11 and 31. A simulation result when the first coupling window 71 and the second coupling window 72 partially overlap will be described.

  On the other hand, when the second conductor layer 13 of the first resonator 10 and the third conductor layer 32 of the second resonator 30 are directly joined, the position β when the signal is input to the position α shown in FIG. The amplitude intensity of the signal was simulated. The result is shown in FIG. The solid line in FIG. 8 shows the simulation result when the edge of the first coupling window 71 and the edge of the second coupling window 72 coincide with each other when viewed in the thickness direction of the dielectric substrates 11 and 31. The broken line in FIG. 8 indicates that the edge of the first coupling window 71 and the edge of the second coupling window 72 are displaced by a distance of 50 μm in the short side direction and the long side direction when viewed in the thickness direction of the dielectric substrates 11 and 31. A simulation result when the first coupling window 71 and the second coupling window 72 partially overlap will be described.

  As shown in FIG. 8, when the second conductor layer 13 of the first resonator 10 and the third conductor layer 32 of the second resonator 30 are directly joined (comparative example), the first coupling window 71 is second. When the position shifts with respect to the coupling window 72, the frequency at which the maximum value is obtained changes greatly. That is, when the first coupling window 71 is displaced with respect to the second coupling window 72, the coupling strength between the first resonator 10 and the second resonator 30 changes greatly.

  On the other hand, as shown in FIG. 7, when the second conductor layer 13 of the first resonator 10 and the third conductor layer 32 of the second resonator 30 are joined by the conductive joint portion 50 (Example), When the one coupling window 71 is displaced with respect to the second coupling window 72, the change in frequency at which the maximum value is obtained is small. That is, when the first coupling window 71 is displaced with respect to the second coupling window 72, the change in coupling strength between the first resonator 10 and the second resonator 30 is small.

  From the above, when the second conductor layer 13 of the first resonator 10 and the third conductor layer 32 of the second resonator 30 are joined by the conductive joint portion 50, the first coupling window 71 and the second coupling It can be seen that the positional deviation of the window 72 does not significantly affect the frequency characteristics of the resonator stack 2.

  Note that the maximum value appears in the amplitude intensity of the signal due to overcoupling between the resonators 10 and 30.

<Verification 2>
When the second conductor layer 13 of the first resonator 10 and the third conductor layer 32 of the second resonator 30 are joined by the conductive joint 50, the size of the coupling opening 51 of the conductive joint 50 is resonant. The effect on the frequency characteristics of the stack 2 was verified by simulation.

  When the thickness of the conductive junction 50 from the first dielectric substrate 11 to the second dielectric substrate 31 is 50 μm, the intensity of the signal at the position β when the signal is input to the position α shown in FIG. 2 is simulated. did. The result is shown in FIG. The solid line in FIG. 9 shows the simulation result when the length of the short side of the coupling opening 51 of the conductive joint 50 is 600 μm and the length of the long side is 1600 μm. A broken line indicates a simulation result when the length of the short side of the coupling opening 51 is 800 μm and the length of the long side is 1800 μm. An alternate long and short dash line indicates a simulation result when the length of the short side of the coupling opening 51 is 1400 μm and the length of the long side is 2400 μm.

  As shown in FIG. 9, even if the size of the coupling opening 51 of the conductive joint portion 50 is changed, the frequency at which the maximum value is obtained hardly changes. Therefore, it can be seen that the dimension of the coupling opening 51 (long side and short side length) does not significantly affect the frequency characteristics of the resonator stack 2.

<Verification 3>
When the second conductor layer 13 of the first resonator 10 and the third conductor layer 32 of the second resonator 30 are joined by the conductive joint 50, the thickness of the conductive joint 50 is the frequency of the resonator stack 2. The effect on characteristics was verified by simulation.

  When the length of the short side of the coupling opening 51 of the conductive joint 50 is 500 μm and the length of the long side is 1500 μm, the amplitude of the signal at the position β when the signal is input to the position α shown in FIG. The strength was simulated. The result is shown in FIG. The solid line in FIG. 10 shows the simulation result when the thickness of the conductive joint 50 is 100 μm. A broken line shows a simulation result when the thickness of the conductive joint portion 50 is 50 μm.

  As shown in FIG. 10, even if the thickness of the conductive joint 50 is changed, the frequency at which the maximum value is obtained hardly changes. Therefore, it can be seen that the thickness of the conductive joint 50 does not significantly affect the frequency characteristics of the resonator stack 2.

<Verification 4>
When copper fine particles were dispersed in the conductive joint 50, it was verified that the conductive joint 50 was good. Details will be described below.

  A glass cloth epoxy substrate (a substrate made of FR4) corresponding to the first dielectric substrate 11 of the first resonator 10 and a glass substrate corresponding to the second dielectric substrate 31 of the second resonator 30 were prepared. . The glass cloth epoxy substrate has a size of 15.8 mm square and a thickness of about 0.6 mm. The glass substrate has a size of 19.0 mm square and a thickness of about 1.0 mm.

  A rectangular frame-shaped copper plating layer (corresponding to the second conductor layer 13 of the first resonator 10) is formed on the glass cloth epoxy substrate, and a rectangular frame-shaped gold flash plating layer (second resonator 30) is formed on the glass substrate. Equivalent to the third conductor layer 32). Three types of solder pastes A to C (see Table 2) were prepared, and the solder paste was printed on the copper plating layer and the gold flash plating layer by an on-contact method. Then, the glass cloth epoxy substrate and the glass substrate were overlapped so that the copper plating layer and the gold flash plating layer were opposed to each other, and the printed solder was reflowed to join the copper plating layer and the gold flash plating layer with the solder. The solidified solder between the copper plating layer and the gold flash plating layer corresponds to the conductive joint 50.

  After solidifying the solder, the solder was photographed with X-rays and observed. An X-ray photograph in the case where the copper plating layer and the gold flash plating layer are joined with the solder paste A is shown in FIG. An X-ray photograph in the case where the copper plating layer and the gold flash plating layer are joined by the solder paste B is shown in FIG. An X-ray photograph in the case where the copper plating layer and the gold flash plating layer are joined by the solder paste C is shown in FIG.

In the case of solder paste A to which copper fine particles were added, the solder was good in all 16 samples (see FIG. 11).
In the case of the solder paste B to which copper fine particles were not added, there was a sample in which a void was formed in the solder (see FIG. 12). Furthermore, there was one sample in which the solder was not formed in a frame shape.
In the case of the solder paste C to which copper fine particles were not added, there was a sample in which a void was formed in the solder (see FIG. 13). Furthermore, there were two samples in which the solder was not formed in a frame shape.

  From the above, it can be seen that the solder is easily wetted by the second conductor layer 13 and the third conductor layer 32 during the formation of the conductive joint 50 in which the copper fine particles are dispersed, and the conductive joint 50 is well formed. .

  DESCRIPTION OF SYMBOLS 10 ... 1st resonator, 11 ... 1st dielectric substrate (1st dielectric material), 12 ... 1st conductor layer, 13 ... 2nd conductor layer, 21 ... 1st conductor post, 29 ... Window (terminal), 30 ... second resonator, 31 ... second dielectric substrate (second dielectric), 32 ... third conductor layer, 33 ... fourth conductor layer, 41 ... second conductor post, 49 ... window (terminal), 50 ... Conductive junction, 61 ... first dielectric film, 62 ... second dielectric film, 71 ... first coupling window, 72 ... second coupling window

Claims (5)

A first dielectric, a first conductor layer and a second conductor layer facing each other with the first dielectric interposed therebetween, and penetrating the first dielectric and connected to the first conductor layer and the second conductor layer A first resonator having a plurality of first conductor posts arranged in a frame shape, and
A second dielectric, a third conductor layer and a fourth conductor layer facing each other across the second dielectric, and the second dielectric and penetrating the second dielectric and connected to the third conductor layer and the fourth conductor layer A plurality of second conductor posts arranged in a frame shape, and a second resonator having the second conductor layer and the third conductor layer facing each other.
A first coupling window formed in the second conductor layer;
A second coupling window formed in the third conductor layer;
Joining the second conductor layer and the third conductor layer, and surrounding the first coupling window and the second coupling window;
A first dielectric film made of resin that covers the second conductor layer and covers the first dielectric in the first coupling window;
A second dielectric film made of resin that covers the third conductor layer and covers the second dielectric in the second coupling window ;
A frame-shaped groove is formed in the first dielectric film so as to surround the first coupling window, and the conductive joint is joined to the second conductor layer through the groove,
A frame-shaped groove is formed in the second dielectric film so as to surround the second coupling window, and the conductive joint is joined to the third conductor layer through the groove . Bonding structure. The resonator coupling structure according to claim 1, wherein the conductive joint includes solder.   The resonator coupling structure according to claim 2, wherein the conductive joint includes copper particles dispersed in the solder using the solder as a base material. The resonator coupling structure according to claim 3, wherein the copper particles have a particle size of 15 to 25 μm. A resonator stack comprising the resonator coupling structure according to any one of claims 1 to 4 , the first resonator, and the second resonator,
The first resonator has a terminal for externally coupling an electric field or a magnetic field in a region surrounded by the first conductor layer, the second conductor layer, and the first conductor post;
The resonator stack, wherein the second resonator has a terminal for coupling an electric field or a magnetic field in an area surrounded by the third conductor layer, the fourth conductor layer, and the second conductor post to the outside.