JP6321522B2 - Heating device - Google Patents

Description

  The present invention relates to a heating device that supports and heats a semiconductor wafer, for example.

  Conventionally, in a semiconductor manufacturing apparatus, processing such as dry etching (for example, plasma etching) is performed on a semiconductor wafer (for example, a silicon wafer). In order to increase the accuracy of this processing, a support means for reliably supporting the semiconductor wafer is required in the semiconductor manufacturing apparatus. As this support means, an electrostatic chuck is known.

  The electrostatic chuck includes, for example, a base member and a support member that supports the semiconductor wafer. The support member is provided with an adsorption electrode and a heater. The base member and the support member are bonded via a bonding layer made of a resin adhesive or the like. The electrostatic chuck attracts and supports the semiconductor wafer on the support surface of the support member by electrostatic attraction generated when a voltage is applied to the attracting electrode. In addition, the semiconductor wafer sucked and supported on the support surface of the support member is heated by the heater.

  By the way, the electrostatic chuck is required to have a small temperature variation of the support surface of the support member in order to increase the accuracy of the processing. For example, Patent Document 1 discloses a wafer support member in which two layers having different filler content ratios are provided in a bonding layer between a base member and a support member.

JP 2012-129539 A

  However, just providing two layers with different filler content ratios in the bonding layer as in Patent Document 1 described above does not provide sufficient uniformity of temperature variation on the support surface of the support member. Further, the effect of relaxing the thermal stress generated between the base member and the support member by the bonding layer is not sufficient.

  The present invention has been made in view of such a background, and is capable of uniforming the temperature distribution of the support surface of the support member that supports the object to be processed, and joining the thermal stress generated between the base member and the support member. It is intended to provide a heating device that can be sufficiently relaxed by the layers.

  According to a first aspect of the present invention, a base member having a front surface and a back surface, a support member disposed on the front surface side of the base member and having a support surface for supporting an object to be processed, and the support member are provided. A heater for heating the object to be processed; a first resin layer containing a filler; and a second resin layer not containing a filler; and between the base member and the support member, A bonding layer including one resin layer and the second resin layer is disposed, and the bonding layer is disposed between a bonding main body including at least one first resin layer, and the base member and the bonding main body. And a second resin layer.

  The said heating apparatus has arrange | positioned the 2nd resin layer between the base member and the joining main-body part. That is, the second resin layer is disposed at a position in contact with the base member in the bonding layer. Here, since the 2nd resin layer does not contain a filler, fluidity | liquidity and a softness | flexibility are high compared with the case where a filler is included. Therefore, when forming a joining layer, it can control that the 2nd resin layer follows the unevenness | corrugation and waviness of the surface of a base member, and a bubble enters between a base member and a joining layer. Thereby, the fall of the heat conductivity between a base member and a joining layer resulting from presence of a bubble can be suppressed, and the temperature distribution of the support surface of a support member can be made uniform.

  Moreover, the thermal conductivity as the whole joining layer becomes small by putting the 2nd resin layer which does not contain a filler in a joining layer. Therefore, it becomes difficult for heat to be transmitted from the support member to the base member via the bonding layer. On the other hand, heat is easily transmitted in the support member (support surface). Thereby, the temperature distribution on the support surface of the support member can be made uniform while suppressing the power consumption of the heater provided in the support member.

  Moreover, the thermal stress which arises between a base member and a supporting member can fully be relieve | moderated by a joining layer by putting the 2nd resin layer which does not contain a filler in a joining layer and has flexibility. Thereby, deformation (warp) of the heating device due to thermal stress can be suppressed.

  The bonding layer has a bonding main body portion including at least one first resin layer. By putting the first resin layer containing the filler in the bonding layer, the strength of the entire bonding layer can be increased. Thereby, the position shift of a supporting member can be suppressed. Further, since the first resin layer includes the filler, it is easy to form a thick flat layer as compared with the case where the first resin layer does not include the filler.

  Moreover, since the 1st resin layer contains a filler, compared with the case where a filler is not included, a viscosity is high and it has thixotropic property. Therefore, the first resin layer can be uniformly applied by a general application method such as screen printing. Moreover, it can apply | coat efficiently, suppressing the loss of material.

  According to a second aspect of the present invention, a base member having a front surface and a back surface, a support member disposed on the front surface side of the base member and having a support surface for supporting an object to be processed, and the support member are provided. A heater for heating the object to be processed; a first resin layer containing a filler; and a second resin layer not containing a filler; and between the base member and the support member, A bonding layer including one resin layer and the second resin layer is disposed, and the bonding layer includes the first resin layer disposed on the base member side and the first resin layer disposed on the support member side. And the second resin layer disposed between the two first resin layers.

  In the heating device, a first resin layer is disposed on each of the base member side and the support member side in the bonding layer. That is, the first resin layer is disposed at a position in contact with the base member and the support member in the bonding layer. Here, since the first resin layer includes the filler, the thermal conductivity is higher than that in the case where the first resin layer does not include the filler. Therefore, the bonding layer is easily cooled by the base member. In this case, since the temperature of the whole joining layer falls, durability and reliability of a joining layer can be improved. In addition, the heat resistance required for the bonding layer is relaxed, and the range of selection of materials used for the bonding layer is expanded.

  Moreover, since the 1st resin layer contains a filler, compared with the case where a filler is not included, a viscosity is high and it has thixotropic property. Therefore, the first resin layer can be uniformly applied by a general application method such as screen printing. Moreover, it can apply | coat efficiently, suppressing the loss of material.

  Moreover, the 2nd resin layer which does not contain a filler is arrange | positioned between the 1st resin layers containing a filler. Here, since the 2nd resin layer does not contain a filler, fluidity | liquidity and a softness | flexibility are high compared with the case where a filler is included. Therefore, by sandwiching the second resin layer between the first resin layers, the second resin layer serves as a buffer material for the first resin layer. Specifically, when the bonding layer is formed, the first resin layer follows the unevenness and waviness of the surface of the base member and the support member, and the base member and the support member can be uniformly bonded by the bonding layer. As a result, it is possible to suppress a decrease in thermal conductivity between the base member and the bonding layer and a decrease in thermal conductivity between the support member and the bonding layer due to non-uniform adhesion between the base member and the supporting member. The temperature distribution on the support surface of the support member can be made uniform.

  Moreover, the thermal stress which arises between a base member and a supporting member can fully be relieve | moderated by a joining layer by putting the 2nd resin layer which does not contain a filler in a joining layer and has flexibility. Thereby, deformation (warp) of the heating device due to thermal stress can be suppressed.

  As described above, according to the present invention, the temperature distribution of the support surface of the support member that supports the object to be processed can be made uniform, and the thermal stress generated between the base member and the support member can be sufficiently reduced by the bonding layer. A heating device that can be provided can be provided.

  In the heating device, a thickness of the second resin layer disposed between the base member and the bonding main body may be 0.5 to 10 μm. In this case, the positional deviation between the base member and the support member can be suppressed, and the thermal stress relaxation effect by the bonding layer can be sufficiently obtained. The thickness of the second resin layer can be measured by cross-sectional observation using a scanning electron microscope (SEM) or the like. In addition, the thickness of the first resin layer and the entire thickness of the bonding layer can be similarly measured.

  The bonding layer may further include the second resin layer disposed between the support member and the bonding main body portion. That is, the second resin layer is disposed at a position in contact with the support member in the bonding layer. Here, since the 2nd resin layer does not contain a filler, fluidity | liquidity and a softness | flexibility are high compared with the case where a filler is included. Therefore, when forming a joining layer, it can control that the 2nd resin layer follows the unevenness | corrugation and waviness of the surface of a supporting member, and a bubble enters between a supporting member and a joining layer. Thereby, the fall of the heat conductivity between a support member and a joining layer resulting from presence of a bubble can be suppressed, and the temperature distribution of the support surface of a support member can be made uniform. In addition, the same operational effects as those of the second resin layer disposed between the base member and the bonded main body described above can be obtained.

  Moreover, 0.5-10 micrometers may be sufficient as the thickness of the said 2nd resin layer arrange | positioned between the said supporting member and the said joining main-body part. In this case, the positional deviation between the base member and the support member can be suppressed, and the thermal stress relaxation effect by the bonding layer can be sufficiently obtained.

  The bonding main body may include a plurality of layers of the first resin layer and the second resin layer disposed between the first resin layers. In this case, the thermal stress relaxation effect by a joining layer improves by putting the 2nd resin layer which does not contain a filler in a joining main-body part and has flexibility.

  The thickness of the second resin layer included in the bonding main body may be larger than the thickness of the second resin layer disposed between the base member and the bonding main body. In this case, the thermal stress relaxation effect by the bonding layer can be enhanced.

  The thickness of the second resin layer included in the bonded main body portion is larger than the thickness of the second resin layer when the second resin layer is disposed between the support member and the bonded main body portion. May be. In this case, the thermal stress relaxation effect by the bonding layer can be enhanced.

  As the number of the first resin layer and the second resin layer in the bonding layer increases, a thermal resistance between the layers is generated, so that the thermal conductivity of the entire bonding layer is reduced. Therefore, it becomes difficult for heat to be transmitted from the support member to the base member via the bonding layer. On the other hand, heat is easily transmitted in the support member (support surface). Thereby, the temperature distribution on the support surface of the support member can be made uniform while suppressing the power consumption of the heater provided in the support member.

  The support member is configured to be capable of adsorbing an object to be processed using an electrostatic attraction generated when a voltage is applied to an adsorption electrode provided on the support member. Examples of the object to be processed include a semiconductor wafer and a glass substrate.

  The support member can be constituted by, for example, a plurality of laminated ceramic layers. With this configuration, various structures (for example, an adsorption electrode and a heater electrode) can be easily formed inside the support member.

  As the material constituting the support member, for example, a ceramic material or the like can be used. As the ceramic material, for example, a sintered body mainly composed of alumina, yttria (yttrium oxide), aluminum nitride, silicon carbide, or the like can be used.

  The material of the conductor constituting the adsorption electrode and the heater (heating element) is not particularly limited, but when forming these conductor and support member by a simultaneous firing method, the metal powder in the conductor is The melting point must be higher than the firing temperature. As the metal powder in the conductor, for example, tungsten (W), molybdenum (Mo), and alloys thereof can be used.

  As the material constituting the base member, for example, a metal material or the like can be used. As the metal material, for example, titanium (Ti), copper (Cu), aluminum (Al), an alloy thereof, or the like can be used. Further, the base member may be provided with a refrigerant flow path for circulating the cooling medium.

  As the resin material constituting the first resin layer and the second resin layer, for example, a silicone resin, an epoxy resin, a phenol resin, an acrylic resin, or the like can be used. Among these, a silicone resin is particularly preferable. Silicone resin has high heat resistance and gas permeability. When the gas permeability is high, the generation of bubbles inside the first resin layer and the second resin layer can be suppressed.

  The resin material is preferably a thermosetting resin that does not generate a volatile compound during the curing process. Some thermosetting resins produce volatile compounds such as oxime, acetone, alcohol, acetic acid during the curing process. Since the bonding layer is disposed between the support member and the base member, these volatile substances are difficult to escape from the bonding layer (resin material), causing a bonding (adhesion) failure. Such a problem can be solved by using a thermosetting resin that does not generate a volatile compound in the curing process as the resin material.

  As the filler contained in the first resin layer, for example, an inorganic filler or the like can be used. As the inorganic filler, for example, alumina, silica, aluminum nitride, silicon nitride, aluminosilicate, zirconia, titania, barium sulfate, calcium carbonate, mica, carbon black and the like can be used. Of these, particularly inexpensive and durable alumina and silica are preferable. Moreover, these may be used independently and may mix and use 2 or more types.

  The shape of the filler is preferably spherical. In this case, the elongation and strain of the bonding layer can be increased as compared with the case of a fiber shape or a plate shape. Moreover, it can suppress that anisotropy arises in heat conduction, and can suppress the dispersion | variation in the temperature distribution of a joining layer (1st resin layer).

  In addition, the shape of the filler being “spherical” includes not only a true spherical shape but also a shape that approximates a true spherical shape. That is, it means that 90% or more of the entire filler is within the range of the form factors 1 to 1.4. Here, the shape factor is calculated from the average value of the ratio of the major axis and the minor axis orthogonal to the major axis of an arbitrary number (for example, several hundreds) of particles magnified and observed with a scanning electron microscope (SEM) or the like. Can do. Therefore, if only perfect spherical particles are used, the shape factor is 1, and the more the shape factor deviates from 1, the more non-spherical.

  A part of the filler contained in the first resin layer may include hollow particles having a hollow inside. The hollow particles have a lower density than the solid particles, and the sedimentation rate in the first resin layer is slow. Therefore, it is possible to suppress the unevenness of the filler in the first resin layer and to prevent the characteristics from changing in the first resin layer (for example, up and down).

  In the bonding layer, it is preferable that two adjacent layers (first resin layer and second resin layer) have the same resin material. In this case, the bonding force between the layers is improved, and peeling at the bonding surface of each layer can be suppressed.

  In the bonding layer, it is preferable that the second resin layers present in a plurality of layers have the same composition. When there are a plurality of first resin layers, it is preferable that the first resin layers have the same composition. In this case, for example, the curing reaction of each layer becomes uniform, and the warpage of the support member and the positional deviation between the base member and the support member can be suppressed.

FIG. 3 is an explanatory cross-sectional view showing the structure of the electrostatic chuck according to the first embodiment. It is sectional explanatory drawing to which a part of electrostatic chuck was expanded. (A) is a top view which shows the electrode for adsorption | suction, (B) is a top view which shows the via | veer connected to the electrode for adsorption | suction. (A) is a plan view showing a heater, (B) is a plan view showing vias connected to the heater, (C) is a plan view showing a driver (internal conductive layer), (D) is It is a top view which shows the via | veer connected to a driver. It is a top view which shows a refrigerant | coolant flow path. It is a SEM photograph which shows the boundary part of a supporting member and a joining layer. (A) is explanatory drawing which shows the process of forming a 2nd resin layer on a base member, (B) is explanatory drawing which shows the process of forming a joining main-body part (1st resin layer) on a 2nd resin layer. (C) is explanatory drawing which shows the process of forming a 2nd resin layer on a joining main-body part (1st resin layer). It is explanatory drawing which shows the process of mounting a supporting member on a joining layer. (A) is explanatory drawing which shows the process of forming a 2nd resin layer on a conveyance film, (B) is explanatory drawing which shows the process of forming a joining main-body part (1st resin layer) on a 2nd resin layer. (C) is explanatory drawing which shows the process of forming a 2nd resin layer on a joining main-body part (1st resin layer). (A) is explanatory drawing which shows the process of transferring the joining layer on a conveyance film on a base member, (B) is explanatory drawing which shows the process of removing a conveyance film and forming a joining layer on a base member. is there. FIG. 5 is an explanatory cross-sectional view illustrating an enlarged part of the electrostatic chuck according to the second embodiment. FIG. 6 is an explanatory cross-sectional view illustrating an enlarged part of the electrostatic chuck according to the third embodiment. FIG. 7 is an enlarged cross-sectional explanatory view of a part of the electrostatic chuck according to the fourth embodiment. It is a SEM photograph which shows a part of joining layer.

Hereinafter, embodiments of the present invention will be described with reference to the drawings.
(Embodiment 1)
The present embodiment is an example in which the heating device of the present invention is applied to an electrostatic chuck.

  As shown in FIG. 1 to FIG. 6, the electrostatic chuck (heating device) 1 of the present embodiment is disposed on the base member 12 having the front surface 121 and the back surface 122, and on the front surface 121 side of the base member 12, and a semiconductor wafer ( A support member 11 having a support surface 111 for supporting a workpiece 8, a heater 41 provided on the support member 11 for heating the semiconductor wafer 8, and a first resin layer 61 containing a filler. And a second resin layer 62 containing no filler.

  A bonding layer 13 including a first resin layer 61 and a second resin layer 62 is disposed between the base member 12 and the support member 11. The bonding layer 13 includes a bonding main body 131 including at least one first resin layer 61 and a second resin layer 62 disposed between the base member 12 and the bonding main body 131. Hereinafter, the electrostatic chuck 1 will be described in detail.

  As shown in FIGS. 1 and 2, the electrostatic chuck 1 is a device that sucks and supports a semiconductor wafer 8 that is an object to be processed. The electrostatic chuck 1 includes a support member 11, a base member 12, a bonding layer 13, and the like. The support member 11 and the base member 12 are joined via a joining layer 13 disposed between them.

  In the present embodiment, the support member 11 side is the upper side, and the base member 12 side is the lower side. The vertical direction is the stacking direction of the support member 11 and the base member 12, and is the thickness direction of the support member 11 and the base member 12. The direction orthogonal to the vertical direction (thickness direction) is a direction (planar direction, plane direction) in which the electrostatic chuck 1 spreads in a plane.

  As shown in the figure, the support member 11 is a member that adsorbs and supports the semiconductor wafer 8. The support member 11 has a front surface (support surface) 111 and a back surface 112, and is formed in a disk shape. A surface (support surface) 111 of the support member 11 is a surface that sucks and supports the semiconductor wafer 8. The support member 11 is configured by laminating a plurality of ceramic layers (not shown). Each ceramic layer is made of an alumina sintered body containing alumina as a main component.

  An adsorption electrode 21 and a heater (heating element) 41 are arranged inside the support member 11. The adsorption electrode 21 is disposed on substantially the same plane inside the support member 11. The adsorption electrode 21 generates an electrostatic attractive force by applying a DC high voltage. With this electrostatic attraction, the semiconductor wafer 8 is attracted and supported on the surface (support surface) 111 of the support member 11. The adsorption electrode 21 is made of tungsten.

  The heater 41 is arranged below the adsorption electrode 21 (on the base member 12 side) inside the support member 11. The heater 41 is disposed on substantially the same plane inside the support member 11. The heater 41 is made of tungsten. As a material constituting the adsorption electrode 21 and the heater 41, molybdenum, an alloy thereof, or the like can be used in addition to the above-described tungsten.

  As shown in the figure, the base member 12 is a metal cooling member (cooling plate) made of aluminum or an aluminum alloy. The base member 12 has a front surface 121 and a base back surface, and is formed in a disk shape. The base member 12 is disposed on the lower side of the support member 11. Inside the base member 12, there is provided a refrigerant flow path 123 through which a cooling medium (for example, a fluorinated liquid, pure water, etc.) flows.

  As shown in the figure, the bonding layer 13 is disposed between the support member 11 and the base member 12. The support member 11 and the base member 12 are bonded via the bonding layer 13. Details of the bonding layer 13 will be described later.

  As shown in FIG. 3A, the adsorption electrode 21 is disposed on substantially the same plane inside the support member 11 as described above. The adsorption electrode 21 is formed in a circular shape in plan view.

  As shown in FIG. 3B, a via 22 is disposed on the lower side (base member 12 side) of the adsorption electrode 21. The via 22 is formed in the vertical direction along the central axis of the support member 11. The via 22 is connected to the adsorption electrode 21.

  As shown in FIG. 1, an internal hole 31 formed in the vertical direction from the back surface 122 of the base member 12 toward the support member 11 side is provided inside the electrostatic chuck 1. A cylindrical insulating member 32 is fitted in the internal hole 31. A metallized layer 23 is provided on the bottom surface of the internal hole 31. The metallized layer 23 is connected to the via 22. That is, the adsorption electrode 21 is connected to the metallized layer 23 through the via 22.

  A connection terminal 33 is provided on the metallized layer 23. A terminal fitting 34 is attached to the connection terminal 33. The terminal fitting 34 is connected to a power supply circuit (not shown). The adsorption electrode 21 is supplied with electric power for generating an electrostatic attractive force via the connection terminal 33 and the like.

  As shown in FIG. 4A, the heater 41 is arranged on substantially the same plane inside the support member 11 as described above. The long heater 41 is folded back many times and is arranged substantially concentrically.

  As shown in FIG. 4B, a pair of vias 42 and 43 are arranged on the lower side (base member 12 side) of the heater 41. The pair of vias 42 and 43 are connected to the pair of terminal portions 411 and 412 of the heater 41, respectively.

  As shown in FIG. 4C, a pair of drivers (internal conductive layers) 44 and 45 are arranged below the pair of vias 42 and 43 (on the base member 12 side). The pair of drivers 44 and 45 are connected to the pair of vias 42 and 43, respectively. Each driver 44, 45 is formed in a substantially semicircular shape in plan view.

  As shown in FIG. 4D, a pair of vias 46 and 47 are disposed below the pair of drivers 44 and 45 (on the base member 12 side). The pair of vias 46 and 47 are connected to the pair of drivers 44 and 45, respectively.

  As shown in FIG. 1, an internal hole 51 formed in the vertical direction from the back surface 122 of the base member 12 toward the support member 11 is provided inside the electrostatic chuck 1. A cylindrical insulating member 52 is fitted in the internal hole 51. A pair of metallized layers 48 are provided on the bottom surface of the internal hole 51 (only one is shown in FIG. 1). The pair of metallized layers 48 are connected to the pair of vias 46 and 47, respectively. In other words, the heater 41 (terminal portions 411 and 412) is connected to the metallized layer 48 via the vias 42 and 43, the drivers 44 and 45, and the vias 46 and 47.

  A connection terminal 53 is provided on the metallized layer 48. A terminal fitting 54 is attached to the connection terminal 53. The terminal fitting 54 is connected to a power supply circuit (not shown). Electric power for heating the heater 41 is supplied to the heater 41 via the connection terminal 53 and the like.

  As shown in FIG. 5, the refrigerant flow path 123 is disposed on substantially the same plane inside the base member 12. The refrigerant flow path 123 is formed in a spiral shape in plan view. The refrigerant channel 123 is configured to introduce a cooling medium from one end thereof and to discharge the cooling medium from the other end.

  Although not shown, a cooling gas supply path serving as a supply path for a cooling gas such as helium for cooling the semiconductor wafer 8 is provided inside the electrostatic chuck 1 (support member 11 and base member 12). Yes. The surface (support surface) 111 of the support member 11 is supported by a plurality of cooling openings (not shown) formed by opening a cooling gas supply path and the cooling gas supplied from the cooling openings. An annular cooling groove (not shown) formed so as to spread over the entire surface (support surface) 111 of the member 11 is provided.

  In the electrostatic chuck 1 having such a configuration, as shown in FIGS. 1 and 2, the bonding layer 13 including the first resin layer 61 and the second resin layer 62 is provided between the base member 12 and the support member 11. Is arranged. The bonding layer 13 includes a bonding main body 131 made of the first resin layer 61, a second resin layer 62 disposed between the base member 12 and the bonding main body 131, the support member 11, and the bonding main body 131. And a second resin layer 62 disposed therebetween.

  As shown in FIG. 6, the first resin layer 61 is obtained by dispersing a filler 611 in a silicone resin. The filler 611 is spherical alumina particles. On the other hand, the second resin layer 62 is made of a silicone resin and does not contain a filler like the first resin layer 61.

  In the present embodiment, the entire bonding layer 13 has a thickness of 304 μm. Moreover, the thickness of the joining main body 131 (first resin layer 61) is 300 μm. The thickness of the second resin layer 62 is 2 μm.

Next, the manufacturing method of the electrostatic chuck of this embodiment will be described.
First, the support member 11 is produced. Specifically, a ceramic green sheet mainly composed of alumina is produced by a conventionally known method. In this embodiment, a plurality of ceramic green sheets to be the support member 11 are produced.

  Next, with respect to the plurality of ceramic green sheets, a space serving as an internal hole 31, a space serving as a cooling gas flow path such as a cooling gas supply path, a through hole serving as a via 22, 42, 43, 46, 47, and the like. Form where needed.

  Next, in a plurality of ceramic green sheets, metallized ink is filled into through holes formed at positions where the vias 22, 42, 43, 46, and 47 are formed. Further, in a plurality of ceramic green sheets, metallized ink is applied to a position where the adsorption electrode 21, the heater 41, and the drivers 44 and 45 are formed by a method such as screen printing. The metallized ink is a slurry obtained by mixing a tungsten powder with a raw material powder for a ceramic green sheet mainly composed of alumina.

  Next, a plurality of ceramic green sheets are aligned with each other, laminated, and thermocompression bonded to obtain a laminated body. The laminate is cut into a predetermined shape. Then, the laminate is fired in a reducing atmosphere at a temperature of 1400 to 1600 ° C. to obtain the support member 11 provided with the adsorption electrode 21, the heater 41, and the like. Thereafter, metallized layers 23, 48, etc. are formed at necessary portions of the support member 11.

  Next, as shown in FIG. 7A, the second adhesion that becomes the second resin layer 62 is formed on the surface 121 of the base member 12 in which the internal holes 31 and 51, the refrigerant flow path 123 and the like (not shown) are formed. Apply material. As a method for applying the second adhesive, screen printing, spin coating, dip coating, or the like can be used. Thereafter, the second adhesive is heated weakly to suppress the flow while maintaining the adhesiveness of the second adhesive. In addition, a 2nd adhesive material consists of silicone resin (Momentive Performance Materials Japan GK: TSE3070).

  Next, as shown in FIG. 7B, a first adhesive that becomes the first resin layer 61 is applied on the second resin layer 62. The application method of the first adhesive is the same as that of the second adhesive, but includes a filler and is preferably formed into a thick film, so that screen printing is preferable. Thereafter, the first adhesive is heated weakly to suppress the flow while maintaining the adhesiveness of the first adhesive. The first adhesive was mixed with silicone resin (Momentive Performance Materials Japan GK: TSE3070) and alumina powder (Admatex: AO-509) as a filler, and stirred and defoamed. It has been processed. As a mixing method, a method using a stirring blade, a method using a roll, or the like can be used. A roll mill is preferred from the viewpoint of obtaining good dispersibility. In the first adhesive, the filler content is 75% by mass. As the alumina powder as the filler, one having a particle size of 25 μm or less selected by a sieve was used.

  Next, as shown in FIG. 7C, a second adhesive that becomes the second resin layer 62 is applied on the first resin layer 61. Thereafter, the second adhesive is heated weakly to suppress the flow while maintaining the adhesiveness of the second adhesive. Thereby, the bonding layer 13 is formed on the surface 121 of the base member 12.

  Next, as shown in FIG. 8, the support member 11 is placed on the bonding layer 13. Then, the bonding layer 13 is strongly heated and cured. Thereby, the support member 11 and the base member 12 are joined (adhered) by the joining layer 13. Thus, the electrostatic chuck 1 is obtained.

Next, the effect of the electrostatic chuck 1 of this embodiment will be described.
In the electrostatic chuck 1 of the present embodiment, the second resin layer 62 is disposed between the base member 12 and the bonding main body 131. That is, the second resin layer 62 is disposed at a position in contact with the base member 12 in the bonding layer 13. Here, since the 2nd resin layer 62 does not contain a filler, compared with the case where a filler is included, fluidity | liquidity and a softness | flexibility are high. Therefore, when forming the bonding layer 13, the second resin layer 62 can follow the surface irregularities and undulations of the base member 12, and bubbles can be prevented from entering between the base member 12 and the bonding layer 13. Thereby, the fall of the heat conductivity between the base member 12 and the joining layer 13 resulting from presence of a bubble can be suppressed, and the temperature distribution of the support surface 111 of the support member 11 can be made uniform.

  Moreover, the thermal conductivity as the whole joining layer 13 becomes small by putting the 2nd resin layer 62 which does not contain a filler in the joining layer 13. FIG. Therefore, it becomes difficult for heat to be transmitted from the support member 11 to the base member 12 through the bonding layer 13. On the other hand, heat is easily transmitted in the support member 11 (support surface 111). Thereby, the temperature distribution of the support surface 111 of the support member 11 can be made uniform while suppressing the power consumption of the heater 41 provided in the support member 11.

  In addition, the bonding layer 13 sufficiently relaxes the thermal stress generated between the base member 12 and the support member 11 by inserting a flexible second resin layer 62 that does not include a filler in the bonding layer 13. be able to. Thereby, deformation (warp) of the electrostatic chuck 1 due to thermal stress can be suppressed.

  Further, the bonding layer 13 includes a bonding main body 131 including at least one first resin layer 61. By putting the first resin layer 61 containing a filler in the bonding layer 13, the strength of the entire bonding layer 13 can be increased. Thereby, the position shift of the supporting member 11 can be suppressed. Moreover, since the 1st resin layer 61 contains a filler, it becomes easy to form a thick flat layer compared with the case where a filler is not included.

  Moreover, since the 1st resin layer 61 contains a filler, compared with the case where a filler is not included, a viscosity is high and it has thixotropic property. Therefore, the first resin layer 61 can be uniformly applied by a general application method such as screen printing. Moreover, it can apply | coat efficiently, suppressing the loss of material.

  In the present embodiment, the bonding layer 13 further includes a second resin layer 62 disposed between the support member 11 and the bonding main body 131. That is, the second resin layer 62 is disposed at a position in contact with the support member 11 in the bonding layer 13. Here, since the 2nd resin layer 62 does not contain a filler, compared with the case where a filler is included, fluidity | liquidity and a softness | flexibility are high. Therefore, when forming the bonding layer 13, the second resin layer 62 can follow the surface irregularities and undulations of the support member 11, and bubbles can be suppressed from entering between the support member 11 and the bonding layer 13. Thereby, the fall of the heat conductivity between the supporting member 11 and the joining layer 13 resulting from presence of a bubble can be suppressed, and the temperature distribution of the supporting surface 111 of the supporting member 11 can be made uniform. In addition, the same operational effects as those of the second resin layer 62 disposed between the base member 12 and the bonding main body 131 described above can be obtained.

  The thickness of the second resin layer 62 disposed on the second resin layer 62 disposed between the base member 12 and the bonding main body 131 and between the support member 11 and the bonding main body 131 is 0.5. 10 μm (2 μm in this embodiment). Therefore, it is possible to suppress the positional deviation between the base member 12 and the support member 11 and to sufficiently obtain the thermal stress relaxation effect by the bonding layer 13.

  Thus, according to the present embodiment, the temperature distribution of the support surface 111 of the support member 11 that supports the semiconductor wafer (object to be processed) 8 can be made uniform, and between the base member 12 and the support member 11. An electrostatic chuck (heating device) 1 that can sufficiently relax the generated thermal stress by the bonding layer 13 can be provided.

  In the manufacturing method of the present embodiment, as shown in FIGS. 7 and 8, the bonding layer 13 is formed by directly applying the first adhesive or the second adhesive on the surface 121 of the base member 12. However, the bonding layer 13 may be formed by directly applying the first adhesive or the second adhesive on the back surface 112 of the support member 11. Other methods can also be used.

  For example, as shown in FIG. 9A, a second adhesive material that becomes the second resin layer 62 is applied onto a transport film 60 made of polyethylene terephthalate (PET). Thereafter, the second adhesive is heated weakly to suppress the flow while maintaining the adhesiveness of the second adhesive.

  Next, as shown in FIG. 9B, a first adhesive that becomes the first resin layer 61 is applied on the second resin layer 62. Thereafter, the first adhesive is heated weakly to suppress the flow while maintaining the adhesiveness of the first adhesive.

  Next, as shown in FIG. 9C, a second adhesive that becomes the second resin layer 62 is applied on the first resin layer 61. Thereafter, the second adhesive is heated weakly to suppress the flow while maintaining the adhesiveness of the second adhesive. Thereby, the bonding layer 13 is formed on the transport film 60.

  Next, as illustrated in FIG. 10A, the bonding layer 13 formed on the transport film 60 is placed on the surface 121 of the base member 12. Thereafter, as shown in FIG. 10B, the transport film 60 is removed. As a result, the bonding layer 13 is transferred onto the surface 121 of the base member 12. The transfer of the bonding layer 13 may be performed on the back surface 112 of the support member 11. Subsequent processes are the same as those described above.

  In the case of this manufacturing method, forming the bonding layer 13 on the transport film 60 facilitates shape processing such as forming a through hole in the bonding layer 13 or cutting out the outer shape. In addition, by cutting out the outer shape, it becomes easy to form the bonding layer 13 only in the necessary portions of the base member 12 and the support member 11.

(Embodiment 2)
This embodiment is an example in which the configuration of a part of the bonding layer 13 (bonding main body 131) of the electrostatic chuck 1 is changed as shown in FIGS. In addition, description is abbreviate | omitted about the structure and effect similar to Embodiment 1. FIG.

  In the example illustrated in FIG. 11, the bonding main body 131 of the bonding layer 13 includes two first resin layers 61 and a second resin layer 62 disposed between the two first resin layers 61. That is, the bonding main body 131 is formed by alternately laminating the first resin layer 61, the second resin layer 62, and the first resin layer 61 in the vertical direction. Further, in the bonding layer 13, the thickness of the second resin layer 62 included in the bonding main body 131 is disposed between the base member 12 and the bonding main body 131 and between the support member 11 and the bonding main body 131. It is larger than the thickness of the second resin layer 62.

  In the example illustrated in FIG. 12, the bonding main body 131 of the bonding layer 13 includes three first resin layers 61 and a second resin layer 62 disposed between the first resin layers 61. That is, the bonding main body 131 is formed by alternately laminating the first resin layer 61, the second resin layer 62, the first resin layer 61, the second resin layer 62, and the first resin layer 61 in the vertical direction. Further, in the bonding layer 13, the thickness of the second resin layer 62 included in the bonding main body 131 is disposed between the base member 12 and the bonding main body 131 and between the support member 11 and the bonding main body 131. It is larger than the thickness of the second resin layer 62.

  In the present embodiment, the bonding main body 131 in the bonding layer 13 includes a plurality of first resin layers 61 and a second resin layer 62 disposed between the first resin layers 61. By including the flexible second resin layer 62 that does not include a filler in the bonding main body 131, the thermal stress relaxation effect by the bonding layer 13 is improved.

  The thickness of the second resin layer 62 included in the bonding main body 131 of the bonding layer 13 is set between the base member 12 and the bonding main body 131 and between the support member 11 and the bonding main body 131. It is larger than the thickness of the two resin layers 62. Therefore, the thermal stress relaxation effect by the bonding layer 13 can be enhanced.

  Moreover, since the thermal resistance between layers arises, so that the lamination | stacking number of the 1st resin layer 61 and the 2nd resin layer 62 in the joining layer 13 increases, the thermal conductivity as the whole joining layer 13 becomes small. Therefore, it becomes difficult for heat to be transmitted from the support member 11 to the base member 12 through the bonding layer 13. On the other hand, heat is easily transmitted in the support member 11 (support surface 111). Thereby, the temperature distribution of the support surface 111 of the support member 11 can be made uniform while suppressing the power consumption of the heater 41 provided in the support member 11.

(Embodiment 3)
This embodiment is an example in which the entire configuration of the bonding layer 13 of the electrostatic chuck 1 is changed as shown in FIGS. Note that the description of the same configuration as that of the first embodiment is omitted.

  As shown in the figure, an electrostatic chuck (heating device) 1 according to the present embodiment is disposed on a base member 12 having a front surface 121 and a back surface 122, and on the front surface 121 side of the base member 12, and a semiconductor wafer (object to be processed). ) A support member 11 having a support surface 111 for supporting 8, a heater electrode (heater) 41 provided on the support member 11 for heating the semiconductor wafer (object to be processed) 8, and a first resin layer containing a filler. 61 and a second resin layer 62 containing no filler.

  A bonding layer 13 including a first resin layer 61 and a second resin layer 62 is disposed between the base member 12 and the support member 11. The bonding layer 13 includes a first resin layer 61 disposed on the base member 12 side, a first resin layer 61 disposed on the support member 11 side, and a first resin layer 61 disposed between the two first resin layers 61. 2 resin layers 62. Hereinafter, the electrostatic chuck 1 will be described in detail.

  As illustrated in FIG. 13, the bonding layer 13 includes two first resin layers 61 and a second resin layer 62 disposed between the two first resin layers 61. That is, the bonding layer 13 is formed by alternately laminating the first resin layer 61, the second resin layer 62, and the first resin layer 61 in the vertical direction.

  As shown in FIG. 14, the first resin layer 61 is obtained by dispersing a filler 611 in a silicone resin. The filler 611 is spherical alumina particles. A part of the filler 611 includes hollow particles whose inside is hollow. On the other hand, the second resin layer 62 is made of a silicone resin and does not contain a filler like the first resin layer 61.

  In the present embodiment, the entire bonding layer 13 has a thickness of 305 μm. Further, the thicknesses of the two first resin layers 61 are both 150 μm. The thickness of the second resin layer 62 is 5 μm.

Next, the effect of the electrostatic chuck 1 of this embodiment will be described.
In the electrostatic chuck 1 of the present embodiment, the first resin layer 61 is disposed on the base member 12 side and the support member 11 side in the bonding layer 13, respectively. That is, the first resin layer 61 is disposed at a position in the bonding layer 13 that is in contact with the base member 12 and the support member 11. Here, since the 1st resin layer 61 contains a filler, compared with the case where a filler is not included, heat conductivity is high. For this reason, the bonding layer 13 is easily cooled by the base member 12. In this case, since the temperature of the bonding layer 13 as a whole decreases, the durability and reliability of the bonding layer 13 can be improved. Further, the heat resistance required for the bonding layer 13 is relaxed, and the range of selection of materials used for the bonding layer 13 is widened.

  Moreover, since the 1st resin layer 61 contains a filler, compared with the case where a filler is not included, a viscosity is high and it has thixotropic property. Therefore, the first resin layer 61 can be uniformly applied by a general application method such as screen printing. Moreover, it can apply | coat efficiently, suppressing the loss of material.

  Moreover, the 2nd resin layer 62 which does not contain a filler is arrange | positioned between the 1st resin layers 61 containing a filler. Here, since the 2nd resin layer 62 does not contain a filler, compared with the case where a filler is included, fluidity | liquidity and a softness | flexibility are high. Therefore, the second resin layer 62 serves as a buffer material for the first resin layer 61 by sandwiching the second resin layer 62 between the first resin layers 61. Specifically, when forming the bonding layer 13, the first resin layer 61 follows the surface irregularities and undulations of the base member 12 and the support member 11, and the base member 12 and the support member 11 are connected to the bonding layer 13. Can be bonded evenly. As a result, a decrease in thermal conductivity between the base member 12 and the bonding layer 13 due to non-uniform adhesion between the base member 12 and the support member 11 and heat conduction between the support member 11 and the bonding layer 13 are achieved. The reduction in the rate can be suppressed, and the temperature distribution of the support surface 111 of the support member 11 can be made uniform.

  In addition, the bonding layer 13 sufficiently relaxes the thermal stress generated between the base member 12 and the support member 11 by inserting a flexible second resin layer 62 that does not include a filler in the bonding layer 13. be able to. Thereby, deformation (warp) of the electrostatic chuck 1 due to thermal stress can be suppressed.

  In the present embodiment, a part of the filler 611 contained in the first resin layer 61 includes hollow particles that are hollow inside. The hollow particles have a lower density than the solid particles, and the sedimentation speed in the first resin layer 61 is slow. Therefore, it is possible to suppress the unevenness of the filler 611 in the first resin layer 61 and to prevent the characteristics from changing in the first resin layer 61 (for example, up and down).

(Other embodiments)
It goes without saying that the present invention is not limited to the above-described embodiments, and can be implemented in various modes without departing from the present invention.

  (1) In the above-described embodiment, the second resin layer 62 is disposed both between the base member 12 and the bonding main body 131 and between the support member 11 and the bonding main body 131. The layer 62 may be disposed between the base member 12 and the bonding main body 131 and may not be disposed between the support member 11 and the bonding main body 131.

(2) In the above-described embodiment, the heating device of the present invention is applied to an electrostatic chuck. However, it can also be applied to a ceramic heater, a vacuum chuck with a heater, or the like.
(3) In the above-described Embodiment 3, the first resin layer 61 contains the filler 611 containing hollow particles. Similarly, in the above-described Embodiments 1 and 2, the first resin layer 61 includes A filler 611 including hollow particles may be contained.

1 ... Electrostatic chuck (heating device)
DESCRIPTION OF SYMBOLS 11 ... Base member 111 ... Support surface 12 ... Metal base 121 ... Front surface 122 ... Back surface 13 ... Joining layer 131 ... Joining main-body part 21 ... Electrode for adsorption 41 ... Heater 61 ... 1st resin layer 62 ... 2nd resin layer 8 ... Semiconductor Wafer (object to be processed)

Claims (7)

A base member having a front surface and a back surface;
A support member disposed on the surface side of the base member and having a support surface for supporting an object to be processed;
A heater provided on the support member for heating the workpiece;
A first resin layer containing a filler;
A second resin layer containing no filler,
A bonding layer including the first resin layer and the second resin layer is disposed between the base member and the support member,
The bonding layer includes a bonded main body portion including at least one first resin layer, and the second resin layer disposed between the base member and the bonded main body portion ,
The heating device, wherein the bonding layer further includes the second resin layer disposed between the support member and the bonding main body .   2. The heating apparatus according to claim 1, wherein a thickness of the second resin layer disposed between the base member and the bonding main body is 0.5 to 10 μm. 3. The heating apparatus according to claim 1 , wherein a thickness of the second resin layer disposed between the support member and the bonding main body is 0.5 to 10 μm . The said joining main-body part contains the said 1st resin layer of multiple layers, and the said 2nd resin layer arrange | positioned between these 1st resin layers , The any one of Claims 1-3 characterized by the above-mentioned. The heating apparatus according to item 1 . A base member having a front surface and a back surface;
A support member disposed on the surface side of the base member and having a support surface for supporting an object to be processed;
A heater provided on the support member for heating the workpiece;
A first resin layer containing a filler;
A second resin layer containing no filler,
A bonding layer including the first resin layer and the second resin layer is disposed between the base member and the support member,
The bonding layer includes a bonded main body portion including at least one first resin layer, and the second resin layer disposed between the base member and the bonded main body portion,
The said joining main-body part contains the said 1st resin layer of multiple layers, and the said 2nd resin layer arrange | positioned between these 1st resin layers, The heating apparatus characterized by the above-mentioned. The thickness of the second resin layer included in the joint main body, according to claim 4, wherein greater than the thickness of the deployed second resin layer between the base member and the joint body portion or The heating apparatus according to claim 5. A base member having a front surface and a back surface;
A support member disposed on the surface side of the base member and having a support surface for supporting an object to be processed;
A heater provided on the support member for heating the workpiece;
A first resin layer containing a filler;
A second resin layer containing no filler,
A bonding layer including the first resin layer and the second resin layer is disposed between the base member and the support member,
The bonding layer includes the first resin layer disposed on the base member side, the first resin layer disposed on the support member side, and the two resin layers disposed between the two first resin layers. And a second resin layer.