JP6319881B2 - 量子井戸太陽電池 - Google Patents
量子井戸太陽電池 Download PDFInfo
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- JP6319881B2 JP6319881B2 JP2014026098A JP2014026098A JP6319881B2 JP 6319881 B2 JP6319881 B2 JP 6319881B2 JP 2014026098 A JP2014026098 A JP 2014026098A JP 2014026098 A JP2014026098 A JP 2014026098A JP 6319881 B2 JP6319881 B2 JP 6319881B2
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- quantum well
- solar cell
- algaas
- semiconductor
- gaas
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/544—Solar cells from Group III-V materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Photovoltaic Devices (AREA)
Description
ここで、前記積層体は前記障壁層と前記量子井戸層との繰り返し構造を有してよい。
また、前記量子井戸の半導体は直接遷移半導体であり、前記障壁層の半導体は間接遷移半導体であってよい。
また、前記量子井戸の半導体はGaAsであり、前記障壁層の半導体はAlGaAsであってよい。
また、前記AlGaAsの組成をAlxGa1−xAsと表現するとき、xの範囲が0.7〜0.85であってよい。
I∝exp(EA/KBT) (1)
ここで、EAはPLの消失を特徴づける活性化エネルギーである。高温領域でのフィッティングの結果、EA≒50meVが得られた。この値は電子及びホールに対する障壁高よりもかなり小さい。明瞭なPL信号が300Kにおいても観測されたところから、非放射再結合の寄与はわずかである。従って、この結果量子井戸中の電子がエネルギー的に近いAlGaAsのX谷との相互作用の存在を示している。
Claims (4)
- 障壁層と量子井戸層との積層体を設けた量子井戸太陽電池において、
kBをボルツマン定数とし、絶対温度をTとするとき、前記量子井戸層の基底状態のエネルギー準位と前記障壁層の半導体の伝導帯下端のエネルギー準位の差が±3kBT以内であるとともに、
前記量子井戸層の半導体は直接遷移半導体であり、前記障壁層の半導体は間接遷移半導体である
量子井戸太陽電池。 - 前記積層体は前記障壁層と前記量子井戸層との繰り返し構造を有する、請求項1に記載の量子井戸太陽電池。
- 前記量子井戸層の半導体はGaAsであり、前記障壁層の半導体はAlGaAsである、請求項1または2に記載の量子井戸太陽電池。
- 前記AlGaAsの組成をAlxGa1−xAsと表現するとき、xの範囲が0.7〜0.85である、請求項3に記載の量子井戸太陽電池。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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JP2014026098A JP6319881B2 (ja) | 2014-02-14 | 2014-02-14 | 量子井戸太陽電池 |
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JP2014026098A JP6319881B2 (ja) | 2014-02-14 | 2014-02-14 | 量子井戸太陽電池 |
Publications (2)
Publication Number | Publication Date |
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JP2015153892A JP2015153892A (ja) | 2015-08-24 |
JP6319881B2 true JP6319881B2 (ja) | 2018-05-09 |
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JP2014026098A Active JP6319881B2 (ja) | 2014-02-14 | 2014-02-14 | 量子井戸太陽電池 |
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JP (1) | JP6319881B2 (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
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JP6259843B2 (ja) * | 2016-01-12 | 2018-01-10 | シャープ株式会社 | 間接遷移半導体材料を用いた量子構造を有する光電変換素子 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06103774B2 (ja) * | 1987-07-28 | 1994-12-14 | 日本電気株式会社 | 半導体光機能発光素子 |
JP2932059B2 (ja) * | 1996-04-18 | 1999-08-09 | 株式会社日立製作所 | 太陽電池 |
US7599593B2 (en) * | 2004-12-09 | 2009-10-06 | The Board Of Trustees Of The Leland Stanford Junior University | Ge-Si quantum well structures |
JP5341949B2 (ja) * | 2011-05-24 | 2013-11-13 | シャープ株式会社 | 太陽電池 |
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2014
- 2014-02-14 JP JP2014026098A patent/JP6319881B2/ja active Active
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