JP6301157B2 - Processing method and processing apparatus, and workpiece processed by the processing method or processing apparatus - Google Patents
Processing method and processing apparatus, and workpiece processed by the processing method or processing apparatus Download PDFInfo
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- 238000003672 processing method Methods 0.000 title claims description 23
- 230000007246 mechanism Effects 0.000 claims description 40
- 239000012495 reaction gas Substances 0.000 claims description 28
- 239000002002 slurry Substances 0.000 claims description 24
- 238000005498 polishing Methods 0.000 claims description 22
- 238000000034 method Methods 0.000 claims description 17
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- 238000007599 discharging Methods 0.000 claims description 2
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- 238000003754 machining Methods 0.000 description 22
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 10
- 229910010271 silicon carbide Inorganic materials 0.000 description 9
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 6
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- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 3
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- 238000005530 etching Methods 0.000 description 3
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- 239000011737 fluorine Substances 0.000 description 3
- 229910052731 fluorine Inorganic materials 0.000 description 3
- 238000000227 grinding Methods 0.000 description 3
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- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
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Landscapes
- Mechanical Treatment Of Semiconductor (AREA)
- Grinding And Polishing Of Tertiary Curved Surfaces And Surfaces With Complex Shapes (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Description
本発明は、SiC、GaN、ダイヤモンド等の高硬度材料の研磨に用いて好適な加工方法および加工装置並びに該加工方法又は該加工装置により加工された加工物に関する。 The present invention relates to a processing method and a processing apparatus suitable for polishing a high hardness material such as SiC, GaN, diamond, and a workpiece processed by the processing method or the processing apparatus.
半導体パワーデバイスを作製する上で基板の平坦化は必須であるが、炭化ケイ素（SiC）、窒化ガリウム（GaN）、ダイヤモンドに代表されるワイドバンドギャップ半導体基板は硬く脆いことから、従来の機械的加工では高能率な平坦化は困難である。
P-CVM（Plasma Chemical Vaporization Machining）は大気圧雰囲気下でのプラズマを用いた化学的な加工方法であり、その高いラジカル密度から高効率な加工が可能である。しかし、P-CVMによる加工は等方性エッチングであり、表面凸部のみならず表面凹部も加工してしまうため、平坦化には向かない。
Planarization of the substrate is indispensable for manufacturing semiconductor power devices, but wide band gap semiconductor substrates represented by silicon carbide (SiC), gallium nitride (GaN), and diamond are hard and brittle. High-efficiency flattening is difficult in processing.
P-CVM (Plasma Chemical Vaporization Machining) is a chemical processing method using plasma in an atmospheric pressure atmosphere, and high-efficiency processing is possible due to its high radical density. However, processing by P-CVM is isotropic etching, and not only the surface protrusions but also the surface recesses are processed.
そこで、特許文献１には、SiC、GaNまたはWC等の超硬合金を始めとする難加工材料をプラズマ処理と機械研磨を複合させて高能率且つ高精度に加工する方法および装置が開示されている。 Therefore, Patent Document 1 discloses a method and apparatus for processing difficult-to-work materials such as cemented carbide such as SiC, GaN, or WC with high efficiency and high accuracy by combining plasma processing and mechanical polishing. Yes.
特許文献１に示される加工方法は、大気圧プラズマによって生成した反応性の高いOHラジカル等の酸化種をSiCや超硬合金等の難加工材料の表面に作用させて改質（軟質化）することで、機械加工により高能率にラッピング・ポリシング仕上げを行う加工方法である。さらに具体的には、表面改質プロセスにおいて、不活性ガスと、H２OとH２O２の一方または双方を含む雰囲気中に高周波電力を投入してOHラジカルを生成し、OHラジカルによって難加工材料の表面に酸化物層（軟質層）を形成するというものである。 The processing method disclosed in Patent Document 1 modifies (softens) an oxidizing species such as highly reactive OH radical generated by atmospheric pressure plasma on the surface of difficult-to-process materials such as SiC and cemented carbide. Therefore, it is a processing method for performing lapping and polishing finishing with high efficiency by machining. More specifically, in the surface modification process, high-frequency power is input into an atmosphere containing an inert gas and one or both of H 2 O and H 2 O 2 to generate OH radicals, which are difficult to generate by OH radicals. An oxide layer (soft layer) is formed on the surface of the processed material.
この特許文献１のものでは、超硬合金材料等の表面をプラズマ処理によって軟質化した後に機械加工するものであるので超硬合金材料等であっても高能率で加工を行えるという利点がある。
しかしながら、特許文献１のものでは、最後に機械加工によって仕上げるものであるため、機械加工の程度にもよるが、微小なスクラッチなどのダメージ（加工変質層）が発生するおそれがある。
また、材料の表面を酸化処理するものであるので、そもそも、アルミナ等の酸化物からなる被加工物の加工には向かない。
本発明は、上記課題を解決すべくなされ、その目的とするところは、被加工物の表面にダメージ（加工変質層）を生じさせることなく、精度良く研磨を行える加工方法よび加工装置並びに該加工方法又は該加工装置により加工された加工物を提供することにある。
In the thing of this patent document 1, since it machine-processes after softening the surface of a cemented carbide material etc. by plasma processing, even if it is a cemented carbide alloy material etc., there exists an advantage that it can process with high efficiency.
However, since the thing of patent document 1 is finished by machining at the end, depending on the degree of machining, there is a possibility that damage such as a minute scratch (working deteriorated layer) may occur.
Further, since the surface of the material is oxidized, it is not suitable for processing a workpiece made of oxide such as alumina.
The present invention has been made to solve the above-mentioned problems, and an object of the present invention is to provide a processing method and a processing apparatus capable of performing polishing with high accuracy without causing damage (processing deteriorated layer) to the surface of the workpiece, and the processing It is providing the workpiece processed by the method or this processing apparatus.
上記目的を達成するため、本発明は次の構成を備える。
すなわち、本発明に係る加工方法は、機械的加工部において、被加工物の表面の少なくとも一部に、機械的作用によって加工変質層を形成する工程と、プラズマ発生部において、前記機械的加工部で形成された前記加工変質層の少なくとも一部の表面にプラズマを化学的に作用させ、前記加工変質層の少なくとも一部を除去する工程を含み、該両工程を交互に、相互に異なる場所で行う加工方法であって、リング状の定盤を備える前記機械的加工部と、前記リング状の定盤内に配置された前記プラズマ発生部を有する加工装置を用い、被加工物を保持部により保持した状態で前記機械的加工部と前記プラズマ発生部との間を移動させて被加工物の加工を行うことを特徴とする。
In order to achieve the above object, the present invention comprises the following arrangement.
That is, the machining method according to the present invention includes a step of forming a work-affected layer by a mechanical action on at least a part of a surface of a workpiece in a mechanical working portion, and And a step of removing at least a part of the work-affected layer by plasma chemically acting on at least a part of the surface of the work-affected layer formed in step 1. A processing method to be performed using a processing device including the mechanical processing unit including a ring-shaped surface plate and the plasma generation unit disposed in the ring-shaped surface plate, and a workpiece to be processed by a holding unit. The workpiece is processed by moving between the mechanically processed portion and the plasma generating portion while being held.
前記プラズマ発生部において、長孔状の反応ガス供給孔を有する電極によりプラズマをライン状に発生させ、被加工物を該ライン状のプラズマに対して往復運動させて前記加工変質層を除去するようにすることができる。 In the plasma generating section, plasma is generated in a line shape by an electrode having a long hole-like reaction gas supply hole, and the work-affected layer is removed by reciprocating the workpiece with respect to the line-shaped plasma. Can be.
大気圧下でプラズマを発生させることができる。
また、前記機械的加工部において、スラリーを供給しつつケミカルメカニカルポリシング（ＣＭＰ）により前記加工変質層を形成するようにすることができる。この場合、前記加工変質層を形成後、被加工物の表面からスラリーを除去するようにするとよい。
高硬度材料からなる被加工物を加工することができる。
前記高硬度材料からなる被加工物がSiC、GaNもしくはダイヤモンドの場合に好適である。
Plasma can be generated under atmospheric pressure.
In the mechanically processed portion, the work-affected layer can be formed by chemical mechanical polishing (CMP) while supplying slurry. In this case, the slurry may be removed from the surface of the workpiece after forming the work-affected layer.
A workpiece made of a high hardness material can be processed.
It is suitable when the workpiece made of the high hardness material is SiC, GaN or diamond.
本発明に係る加工装置は、被加工物に接触し、被加工物との間の相対移動により被加工物の表面の少なくとも一部に加工変質層を形成する機械的加工部と、 該機械的加工部に隣接して配置され、前記機械的加工部により形成された加工変質層の少なくとも一部の表面にプラズマを化学的に作用させ、前記加工変質層の少なくとも一部を除去するプラズマ発生部と、被加工物を保持する保持部と、該保持部に保持された被加工物を前記機械的加工部と前記プラズマ発生部との間に亘って移動させる移動機構とを具備する加工装置であって、前記機械的加工部が所要幅のリング状の定盤を有し、前記プラズマ発生部が前記リング状の定盤の内部に配置されていることを特徴とする。 A processing apparatus according to the present invention includes a mechanical processing unit that contacts a workpiece and forms a work-affected layer on at least a part of the surface of the workpiece by relative movement with the workpiece. A plasma generating part that is arranged adjacent to a processing part and causes plasma to chemically act on at least a part of the surface of the work-affected layer formed by the mechanically processed part, thereby removing at least a part of the work-affected layer. If, in the processing apparatus comprising a holding portion for holding a workpiece, and a moving mechanism for moving over between a workpiece held by the holding portion and the mechanical processing unit said plasma generating portion The mechanically processed portion has a ring-shaped surface plate having a required width, and the plasma generating portion is disposed inside the ring-shaped surface plate.
前記プラズマ発生部は高周波電力が印加される電極を有し、前記保持部は被加工物が保持される裏面電極を有し、前記電極の周囲の部材および前記裏面電極側が接地されるようにすると好適である。
前記高周波電力が印加される電極に、長孔状の反応ガス供給孔を有する電極を用い、ライン状のプラズマを発生させると好適である。
前記プラズマ発生部に、前記電極の反応ガス供給孔内に反応ガスを導入する複数の絞り孔を設けると好適である。
前記電極の周囲を囲む吸引孔を有するカバーを前記電極の周囲に設け、前記吸引孔を通じて反応ガスを吸引して外部に排出する吸引機構を設けると好適である。
また、前記保持部に、前記プラズマ発生部を覆うカバー部材を設けると好適である。
The plasma generation unit has an electrode to which high-frequency power is applied, the holding unit has a back electrode for holding a workpiece, and a member around the electrode and the back electrode side are grounded. Is preferred.
It is preferable that an electrode having an elongated reaction gas supply hole is used as the electrode to which the high-frequency power is applied, and line-shaped plasma is generated.
It is preferable that a plurality of throttle holes for introducing the reaction gas into the reaction gas supply hole of the electrode are provided in the plasma generation unit.
It is preferable that a cover having a suction hole surrounding the periphery of the electrode is provided around the electrode, and a suction mechanism for sucking the reaction gas through the suction hole and discharging it to the outside.
Further, it is preferable that a cover member that covers the plasma generation unit is provided in the holding unit.
また前記電極を冷却する冷却機構を設けると好適である。
前記機械的加工部は、スラリーを供給しつつ被加工物の研磨を行うケミカルメカニカルポリシング（ＣＭＰ）装置とすることができる。この場合、前記機械的加工部と前記プラズマ発生部との間に、前記機械的加工部で用いられ、前記被加工物の表面に付着したスラリーを除去するスラリー除去部を設けると好適である。
また、前記移動機構は、前記保持部を、水平動させる機構、上下動させる機構、水平面内で回転させる機構、さらには前記保持部に保持された被加工物を前記定盤に対して所要圧力で押圧する押圧機構とで構成することができる。
また、前記いずれかに記載の加工方法又は加工装置によって加工された加工物を得ることができる。
It is preferable to provide a cooling mechanism for cooling the electrode.
The mechanical processing unit may be a chemical mechanical polishing (CMP) apparatus that polishes a workpiece while supplying slurry. In this case, it is preferable to provide a slurry removal unit that is used in the mechanical processing unit and removes the slurry attached to the surface of the workpiece, between the mechanical processing unit and the plasma generation unit.
The moving mechanism includes a mechanism for moving the holding portion horizontally, a mechanism for moving the holding portion up and down, a mechanism for rotating the holding portion within a horizontal plane, and a work piece held by the holding portion with a required pressure against the surface plate. It can comprise with the press mechanism pressed by.
Moreover, the workpiece processed with the processing method or the processing apparatus described in any one of the above can be obtained.
本発明によれば、被加工物の表面にダメージ（加工変質層）を生じさせることなく、精度良く研磨を行える加工方法よび加工装置を提供できる。また、高品質な加工物を得ることができる。 ADVANTAGE OF THE INVENTION According to this invention, the processing method and processing apparatus which can grind | polish accurately can be provided, without producing damage (processed deterioration layer) on the surface of a to-be-processed object. Moreover, a high-quality workpiece can be obtained.
以下、本発明の好適な実施の形態について、添付図面に基づいて詳細に説明する。
本実施の形態における加工方法と加工装置は軌を一にするものであり、以下並行して説明する。
図１は加工装置１０の概略を示す斜視図である。
まず、加工装置１０の各部の概略を説明する。
図１において、１２は機械的加工部であり、被加工物に接触し、被加工物との間の相対移動により被加工物の表面の少なくとも一部（凸部）に加工変質層を形成する。本実施の形態では、機械的加工部１２は、水平面内で回転するリング状の定盤１３を備える。機械的加工部１２での加工方法は、被加工物の表面を、定盤１３に固定した固定砥粒により直接研磨あるいは研削する加工や、定盤１３の研磨布に研磨砥粒を含むスラリー供給して被加工物の表面の研磨を行うCMP（ケミカルメカニカルポリシング）研磨等のいずれをも採用でき、その機械加工方法は特に限定されない。
DESCRIPTION OF EXEMPLARY EMBODIMENTS Hereinafter, preferred embodiments of the invention will be described in detail with reference to the accompanying drawings.
The processing method and the processing apparatus in the present embodiment are the same, and will be described below in parallel.
FIG. 1 is a perspective view showing an outline of the processing apparatus 10.
First, the outline of each part of the processing apparatus 10 will be described.
In FIG. 1, reference numeral 12 denotes a mechanically processed portion that contacts the workpiece and forms a work-affected layer on at least a part (convex portion) of the surface of the workpiece by relative movement with the workpiece. . In the present embodiment, the mechanical processing unit 12 includes a ring-shaped surface plate 13 that rotates in a horizontal plane. A processing method in the mechanical processing unit 12 includes a process of directly polishing or grinding the surface of a workpiece with fixed abrasive grains fixed to a surface plate 13, and a slurry supply including abrasive grains on the polishing cloth of the surface plate 13 Any of CMP (chemical mechanical polishing) polishing and the like for polishing the surface of the workpiece can be employed, and the machining method is not particularly limited.
機械的加工部１２では、被加工物の表面の凸部に、研磨、研削、CMP等の処理を施すものであるが、被加工物が高硬度材料であるときは、凸部の除去量は少ない。むしろ本実施の形態において、機械的加工部１２おける目的は、必ずしも凸部の除去を積極的な目的とするものではなく、上記処理によって、凸部に微小スクラッチ等のダメージ（加工変質層）を積極的に形成し、以後のプラズマ処理による上記加工変質層を除去しやすくことを目的としている。 In the mechanically processed portion 12, the convex portion on the surface of the workpiece is subjected to processing such as polishing, grinding, CMP, etc. When the workpiece is a high hardness material, the removal amount of the convex portion is Few. Rather, in the present embodiment, the purpose of the mechanically processed portion 12 is not necessarily the positive purpose of removing the convex portion, and the above processing causes damage such as micro scratches (processed alteration layer) to the convex portion. The purpose is to positively form and easily remove the work-affected layer by subsequent plasma treatment.
次に、１４はプラズマ処理を行うプラズマ発生部である。
プラズマ発生部１４は、機械的加工部１２に隣接して配置される。本実施の形態では、プラズマ発生部１４は、リング状定盤１３内に位置して設けられている。プラズマ発生部１４では、機械的加工部１２により形成された加工変質層の少なくとも一部の表面にプラズマを化学的に作用させ、該加工変質層の少なくとも一部を除去する処理を行う。
Next, 14 is a plasma generator for performing plasma processing.
The plasma generation unit 14 is disposed adjacent to the mechanical processing unit 12. In the present embodiment, the plasma generation unit 14 is provided in the ring-shaped surface plate 13. In the plasma generation unit 14, plasma is chemically applied to at least a part of the surface of the work-affected layer formed by the mechanical processing unit 12 to remove at least a part of the work-affected layer.
図１に示すように、プラズマ発生部１４には、ガスボンベ１５からHe等の希ガスが反応ガスのベースガスとして適宜配管（図示せず）を通じて供給される。さらにプラズマ発生部１４には、ガスボンベ１６から各種反応ガスが供給される。反応ガスとしては、被加工物がSiCの場合にはSF６ガス等のフッ素系ガスを、被加工物がGaNの場合にはCl２ガス等の塩素系ガスを、被加工物がダイヤモンドの場合にはO２ガス、フッ素系ガスもしくは水素ガスを用いると好適である。
本実施の形態では、機械的加工部１２において、被加工物の表面の凸部に形成した加工変質層を、プラズマ発生部１４において、プラズマのエッチング作用によって除去し、平坦化するものである。このように本実施の形態では、特許文献１のように被加工物表面に酸化層を形成するものではないので、被加工物がアルミナ等の酸化物であっても加工処理が行える。
As shown in FIG. 1, a rare gas such as He is supplied from a gas cylinder 15 to a plasma generation unit 14 as a reaction gas base gas through a pipe (not shown) as appropriate. Further, various reaction gases are supplied from the gas cylinder 16 to the plasma generation unit 14. As the reaction gas, fluorine gas such as SF 6 gas is used when the workpiece is SiC, chlorine gas such as Cl 2 gas is used when the workpiece is GaN, and diamond is used when the workpiece is diamond. It is preferable to use O 2 gas, fluorine-based gas, or hydrogen gas.
In the present embodiment, the work-affected layer formed on the convex portion of the surface of the workpiece in the mechanically processed portion 12 is removed and flattened in the plasma generating portion 14 by the plasma etching action. As described above, in the present embodiment, since an oxide layer is not formed on the surface of the workpiece as in Patent Document 1, the processing can be performed even if the workpiece is an oxide such as alumina.
１７は被加工物を保持する保持部である。
本実施の形態では、被加工物が、保持部１７下面に保持された状態で、保持部１７を、移動機構１８により、機械的加工部１２とプラズマ発生部１４との間に亘って移動することにより、被加工物表面に、上記機械的加工とプラズマ処理を交互に施すようにしている。
１９は各部の制御を行う制御部である。
Reference numeral 17 denotes a holding unit that holds a workpiece.
In the present embodiment, the holding unit 17 is moved between the mechanical processing unit 12 and the plasma generation unit 14 by the moving mechanism 18 in a state where the workpiece is held on the lower surface of the holding unit 17. Thus, the mechanical processing and the plasma treatment are alternately performed on the surface of the workpiece.
Reference numeral 19 denotes a control unit that controls each unit.
続いて各部を詳細に説明する。
１．保持部１７
図２に保持部（ヘッド部）１７の具体例を示す。
２０は連結部であり、下面に、球状の凹面を有する球座２１を有する。球座２１は、樹脂製が好ましい。また、連結部２０の外周面の下部には、下方に向けて拡径するテーパー面からなるストッパ部２２が形成されている。保持部１７は、連結部２０において、前記移動機構１８に連結される。
Next, each part will be described in detail.
1. Holding unit 17
FIG. 2 shows a specific example of the holding unit (head unit) 17.
Reference numeral 20 denotes a connecting portion, which has a spherical seat 21 having a spherical concave surface on the lower surface. The ball seat 21 is preferably made of resin. Further, a stopper portion 22 having a tapered surface whose diameter is expanded downward is formed at a lower portion of the outer peripheral surface of the connecting portion 20. The holding portion 17 is connected to the moving mechanism 18 at the connecting portion 20.
２４は、ヘッド本体であり、リング状の当接体２５、支持部２６、裏面電極２７を有する。
裏面電極２７は、固定具２８がボルト２９により支持部２６に固定されることによって、固定具２８と支持部２６とで挟まれた状態で支持部２６下面に固定されている。ボルト２９は、当接体２５と支持部２６をも連結している。リング状の当接体２５の内周面の下部は、下方に向けて拡径し、連結部２０のストッパ部２２に当接する、逆テーパー状の当接部３０に形成されている。
Reference numeral 24 denotes a head body having a ring-shaped contact body 25, a support portion 26, and a back electrode 27.
The back electrode 27 is fixed to the lower surface of the support portion 26 in a state of being sandwiched between the fixture 28 and the support portion 26 by fixing the fixture 28 to the support portion 26 with bolts 29. The bolt 29 also connects the contact body 25 and the support portion 26. The lower part of the inner peripheral surface of the ring-shaped contact body 25 is formed in a reverse-tapered contact portion 30 that expands downward and contacts the stopper portion 22 of the connecting portion 20.
支持部２６の上面には、連結部２０の球座２１に当接する球面を有する座部３１が形成されている。座部３１も樹脂製とすると好適である。
支持部２６の上面と連結部２０の下面との間には、スプリング３２が複数、配置され、ヘッド本体２４を下方に付勢している。これにより、テーパー面状の当接部３０がストッパ部２２に当接し、ヘッド本体２４は水平状態（定盤１３の上面と平行な状態）で位置決めされ、維持される。この状態では、球座２１と座部３１との間には隙間が生じている。
On the upper surface of the support portion 26, a seat portion 31 having a spherical surface that abuts on the ball seat 21 of the connecting portion 20 is formed. The seat portion 31 is preferably made of resin.
A plurality of springs 32 are disposed between the upper surface of the support portion 26 and the lower surface of the connecting portion 20 to urge the head body 24 downward. As a result, the tapered contact portion 30 contacts the stopper portion 22, and the head main body 24 is positioned and maintained in a horizontal state (a state parallel to the upper surface of the surface plate 13). In this state, a gap is generated between the ball seat 21 and the seat portion 31.
前記の移動機構１８により保持部１７が下降され、裏面電極２７の下面に保持された被加工物が定盤１３の上面に押圧されると、ヘッド本体２４が前記スプリングの付勢力に抗して浮上し、当接部３０がストッパ部２２から離れ、一方、座部３１が球座２１に当接する。これにより、ヘッド本体２４は、球座２１の球面にしたがって揺動可能となり、定盤１３の上面にしたがって揺動可能となり、定盤面に均一に押圧される。 When the holding unit 17 is lowered by the moving mechanism 18 and the workpiece held on the lower surface of the back electrode 27 is pressed against the upper surface of the surface plate 13, the head body 24 resists the biasing force of the spring. As a result, the contact portion 30 moves away from the stopper portion 22, while the seat portion 31 contacts the ball seat 21. As a result, the head body 24 can swing according to the spherical surface of the ball seat 21, can swing according to the upper surface of the surface plate 13, and is uniformly pressed against the surface of the surface plate.
裏面電極２７の下面にはリング状のテンプレート３３が固定されている。テンプレートはプラズマに浸食されない材料、例えばサファイア製とするのが好ましい。
リング状のテンプレート３３内に位置して、薄板状の被加工物（ワーク、ウェーハ）Ｗが裏面電極２７下面に保持される。被加工物Ｗは両面接着テープ等によって裏面電極２７下面に保持される。あるいは被加工物Ｗを、裏面電極２７下面に負圧を及ぼす吸引機構３４によって裏面電極２７下面に吸着、保持するようにしてもよい。
A ring-shaped template 33 is fixed to the lower surface of the back electrode 27. The template is preferably made of a material that is not eroded by plasma, such as sapphire.
Located in the ring-shaped template 33, a thin plate-like workpiece (work, wafer) W is held on the lower surface of the back electrode 27. The workpiece W is held on the lower surface of the back electrode 27 by a double-sided adhesive tape or the like. Alternatively, the workpiece W may be attracted and held on the lower surface of the back electrode 27 by a suction mechanism 34 that applies a negative pressure to the lower surface of the back electrode 27.
テンプレート３３の厚さは、被加工物Ｗの厚さよりも薄いものとし、被加工物Ｗの表面側がテンプレート３３の下面より下方に突出し、これにより定盤１３による接触機械加工が可能となる。なお、テンプレート３３は、機械加工時、被加工物Ｗの周囲を囲み、被加工物Ｗの飛び出しを防止したり、被加工物Ｗのエッジ部の過研磨等を防止したりする。 The thickness of the template 33 is set to be thinner than the thickness of the workpiece W, and the surface side of the workpiece W protrudes downward from the lower surface of the template 33, thereby enabling contact machining by the surface plate 13. Note that the template 33 surrounds the periphery of the workpiece W during machining, and prevents the workpiece W from popping out or prevents excessive polishing of the edge portion of the workpiece W.
次に、３５はリング状のカバー部材であり、固定具２８および裏面電極２７の周囲を囲むようにして、ボルト３６により支持部２６に固定されている。
このカバー部材３５は、その下面が固定具２８および裏面電極２７の下面よりも下方に突出するようにされ、また、プラズマ発生部１４を覆って、後記するプラズマ発生部１４における反応ガスが外方に漏出するのを防止する。なお、カバー部材３５は、支持部２６下面とカバー部材３５上面との間に適宜スペーサ（図示せず）を介在させることによって、下方への突出量を調節可能となっている。
Next, reference numeral 35 denotes a ring-shaped cover member, which is fixed to the support portion 26 with bolts 36 so as to surround the periphery of the fixture 28 and the back electrode 27.
The cover member 35 has a lower surface projecting downward from the lower surfaces of the fixture 28 and the back electrode 27 and covers the plasma generation unit 14 so that a reaction gas in the plasma generation unit 14 to be described later is outward. To prevent leakage. In addition, the cover member 35 can adjust the downward protrusion amount by appropriately interposing a spacer (not shown) between the lower surface of the support portion 26 and the upper surface of the cover member 35.
固定具２８下面と裏面電極２７下面の高さは、プラズマが所要位置に発生するよう同一高さ面となっている。
保持部１７側の、裏面電極２７、支持部２６、当接体２５等は、ＳＵＳ材で形成されており、また、プラズマ発生部１４の電極側と所要電位差を形成するため、接地されている。なお、カバー部材３５は樹脂製としてもよい。
The lower surface of the fixture 28 and the lower surface of the back electrode 27 have the same height so that plasma is generated at a required position.
The back electrode 27, the support portion 26, the contact body 25, and the like on the holding portion 17 side are made of SUS material, and are grounded to form a required potential difference with the electrode side of the plasma generating portion 14. . The cover member 35 may be made of resin.
２．機械的加工部１２
図３および図４に機械的加工部１２およびプラズマ発生部１４を示す。
本実施の形態では、機械的加工部１２は、前記のようにリング状の定盤１３を有する。定盤１３は、CMPの場合には、上面に研磨布が貼付され、また、研磨布上にスラリーを供給するスラリー供給部（図示せず）が設けられる。なお、単なる研磨や研削の場合には、定盤１３面に固定砥粒を固定して用いるようにする。リング状の定盤１３内にプラズマ発生部１４が配置されている。
定盤１３をリング状とし、プラズマ発生部１４をこの定盤１３内に配置することで、スペースを有効に利用でき、また、装置の小型化が図れる等の利点がある。
2. Mechanical processing part 12
3 and 4 show the mechanical processing unit 12 and the plasma generation unit 14.
In the present embodiment, the mechanically processed portion 12 has the ring-shaped surface plate 13 as described above. In the case of CMP, the surface plate 13 is provided with a polishing cloth on the upper surface and a slurry supply unit (not shown) for supplying slurry onto the polishing cloth. In the case of simple polishing or grinding, fixed abrasive grains are fixed to the surface of the surface plate 13 for use. A plasma generator 14 is disposed in a ring-shaped surface plate 13.
By making the surface plate 13 into a ring shape and disposing the plasma generating unit 14 in the surface plate 13, there are advantages that the space can be used effectively and the apparatus can be downsized.
図３、図４に示されるように、定盤１３は、プラズマ発生部１４の周りに回転自在に設けられている。
定盤１３の回転支持機構は次のようになっている。
定盤１３は、基台４２に固定された支持リング４７の内周面と外筒体４０外周面との間に軸受４８が配設されることによって、基台４２に水平面内で回転自在に支持されている（図４）。そして、基台４２に配設された駆動モータ５０のプーリ５１との間にベルト５２が掛け回されて、水平面内で回転駆動される（図３）。
定盤１３の下面側に、外筒体４０と内筒体４１との二重筒が設けられ、支持台４３に立設された支持筒体４４の外周面と内筒体４１の内周面との間に軸受４５が配設されている（図４）。
As shown in FIGS. 3 and 4, the surface plate 13 is rotatably provided around the plasma generator 14.
The rotation support mechanism of the surface plate 13 is as follows.
The surface plate 13 is disposed between the inner peripheral surface of the support ring 47 fixed to the base 42 and the outer peripheral surface of the outer cylindrical body 40, so that the base plate 13 is rotatable on the base 42 in a horizontal plane. Supported (FIG. 4). Then, the belt 52 is wound around the pulley 51 of the drive motor 50 disposed on the base 42, and is driven to rotate in a horizontal plane (FIG. 3).
A double cylinder of an outer cylinder 40 and an inner cylinder 41 is provided on the lower surface side of the surface plate 13, and the outer peripheral surface of the support cylinder 44 erected on the support base 43 and the inner peripheral surface of the inner cylinder 41. A bearing 45 is disposed between the two (FIG. 4).
３．プラズマ発生部１４
図３、図４、図５によりプラズマ発生部１４について説明する。
図４は、電極５４の側面断面図、図５は電極５４の正面断面の拡大図を示す。
電極５４は扁平な板状をなす。電極５４は、定盤１３のほぼ中央に位置して、また、上面を、定盤１３の上面とほぼ同一高さ面となるように、プラズマ発生部１４に配置されている。
電極５４上面側には、電極５４の長さ方向に伸びる反応ガス供給孔５５が形成されている。反応ガス供給孔５５底面には複数の絞り孔５６が間隔をおいて直線状に位置して開口されている。この各絞り孔５６は大径孔５７を介して、共通のガス溜まり５８に通じている。
3. Plasma generator 14
The plasma generator 14 will be described with reference to FIGS. 3, 4, and 5.
FIG. 4 is a side sectional view of the electrode 54, and FIG. 5 is an enlarged view of a front sectional view of the electrode 54.
The electrode 54 has a flat plate shape. The electrode 54 is disposed in the plasma generating unit 14 so as to be positioned at substantially the center of the surface plate 13 and to have an upper surface substantially flush with the upper surface of the surface plate 13.
A reaction gas supply hole 55 extending in the length direction of the electrode 54 is formed on the upper surface side of the electrode 54. On the bottom surface of the reaction gas supply hole 55, a plurality of throttle holes 56 are opened in a straight line at intervals. Each throttle hole 56 communicates with a common gas reservoir 58 through a large-diameter hole 57.
ガス溜まり５８には、支持筒体４４内を伸びるＳＵＳ製のガス供給管６０を介して、ガスボンベ１５およびガスボンベ１６（図１）からHe等のベースガスおよび前記反応ガスが供給される。反応ガスは、複数の絞り孔５６から反応ガス供給孔５５内に導入されるので、長孔状の反応ガス供給孔５５内に均等に供給される。
電極５４は、長孔状の反応ガス供給孔５５を有する長四角状をなす（図６）。
電極５４はアルミニウム合金製で表面がアルマイト処理されており、端子６１およびＳＵＳ製のガス供給管６０を通じて図示しない電源から高周波電力が印加され、裏面電極２７との間でプラズマを生成する。
A base gas such as He and the reaction gas are supplied to the gas reservoir 58 from the gas cylinder 15 and the gas cylinder 16 (FIG. 1) through a gas supply pipe 60 made of SUS extending in the support cylinder 44. Since the reaction gas is introduced into the reaction gas supply hole 55 from the plurality of throttle holes 56, the reaction gas is equally supplied into the long-hole-like reaction gas supply hole 55.
The electrode 54 has a long square shape having a long hole-like reaction gas supply hole 55 (FIG. 6).
The electrode 54 is made of an aluminum alloy and has a surface anodized. High frequency power is applied from a power source (not shown) through the terminal 61 and a gas supply pipe 60 made of SUS, and plasma is generated between the electrode 54 and the back electrode 27.
電極５４を囲むようにして、有底筒状の箱体６２がベースプレート６３およびステー６４を介して支持筒体４４に固定されている。
箱体６２の上面は、電極５４を囲むようにして吸引孔６６が設けられたカバー６７によって覆われている（図３、図６）。
電極５４の反応ガス供給孔５５に供給され、プラズマを生成した後の反応ガスは、吸引機構によって外部に排出される。すなわち、吸引孔６６、箱体６２、継手６８、継手６８に連結される排気パイプ（図示せず）等からなる吸引機構により外部に排出される。
なお、箱体６２、カバー６７等の、電極５４の周囲の部材は接地されている。これにより電極５４に印加される高周波はシールドされ、外部への漏洩が防止される。また、プラズマが照射されている部分以外には高周波電界が印加されず、圧電効果等を有する材料の被加工物であってもプラズマ処理が可能となる。
A bottomed cylindrical box 62 is fixed to the support cylinder 44 via a base plate 63 and a stay 64 so as to surround the electrode 54.
The upper surface of the box 62 is covered by a cover 67 provided with a suction hole 66 so as to surround the electrode 54 (FIGS. 3 and 6).
The reactive gas supplied to the reactive gas supply hole 55 of the electrode 54 and generating plasma is discharged to the outside by a suction mechanism. That is, the air is discharged to the outside by a suction mechanism including a suction hole 66, a box 62, a joint 68, an exhaust pipe (not shown) connected to the joint 68, and the like.
Members around the electrode 54 such as the box 62 and the cover 67 are grounded. Thereby, the high frequency applied to the electrode 54 is shielded, and leakage to the outside is prevented. In addition, a high frequency electric field is not applied to a portion other than the portion irradiated with plasma, and plasma processing is possible even for a workpiece made of a material having a piezoelectric effect or the like.
なお、電極５４は支持部７０を介して箱体６２に固定されている。支持部７０には冷却水が通流される冷却機構（冷却ジャケット）が設けられ（図示せず）、電極５４を冷却しうるようになっている。この冷却ジャケットには、支持筒体４４の空間内に設けた供給パイプ（図示せず）および排出パイプ（図示せず）により冷却水が供給、排出される。なお、７２もカバーである。 The electrode 54 is fixed to the box 62 via the support portion 70. The support portion 70 is provided with a cooling mechanism (cooling jacket) through which cooling water is passed (not shown) so that the electrode 54 can be cooled. Cooling water is supplied to and discharged from the cooling jacket by a supply pipe (not shown) and a discharge pipe (not shown) provided in the space of the support cylinder 44. Reference numeral 72 denotes a cover.
機械的加工部１２がスラリーを用いるCMP加工部である場合、機械的加工部１２とプラズマ発生部１４との間に、機械的加工部１２で用いられ、被加工物Ｗの表面に付着したスラリーを除去するスラリー除去部（図示せず）を設けるようにするとよい。スラリー除去部には、洗浄水を被加工物Ｗに向けて噴射する水噴射部と、さらに被加工物Ｗにエアーを吹き付けて乾燥するエアー噴射部を設けるようにするとよい。
なお、図４および図５は断面図であるが、わかりやすくするため、ハッチングを省略している。図４、図５において記号Ｓは空間部を示している。
When the mechanically processed portion 12 is a CMP processed portion using slurry, the slurry used between the mechanically processed portion 12 and the plasma generating portion 14 is used in the mechanically processed portion 12 and adheres to the surface of the workpiece W. It is preferable to provide a slurry removing unit (not shown) that removes water. The slurry removal unit may be provided with a water injection unit that injects cleaning water toward the workpiece W and an air injection unit that blows air onto the workpiece W and dries it.
4 and 5 are cross-sectional views, but hatching is omitted for easy understanding. 4 and 5, the symbol S indicates a space portion.
４．移動機構１８
次に移動機構１８について、図７により説明する。
図７において、７４は横移動機構、７６は縦移動機構である。
横移動機構７４は、縦移動機構７６そのものを水平方向に移動ガイドするレール７７、および縦移動機構７６をレール７７に沿って水平動させるサーボモータ７８およびボールネジ（図示せず）を備えている。
また、縦移動機構７６は、昇降体８０を上下方向に移動ガイドするレール８２および昇降体８０をレール８２に沿って上下動させるサーボモータ８３およびボールネジ（図示せず）を備えている。
4). Movement mechanism 18
Next, the moving mechanism 18 will be described with reference to FIG.
In FIG. 7, 74 is a horizontal movement mechanism, and 76 is a vertical movement mechanism.
The lateral movement mechanism 74 includes a rail 77 that guides the vertical movement mechanism 76 to move in the horizontal direction, a servo motor 78 that horizontally moves the vertical movement mechanism 76 along the rail 77, and a ball screw (not shown).
Further, the vertical movement mechanism 76 includes a rail 82 for moving and guiding the elevating body 80 in the vertical direction, a servo motor 83 for moving the elevating body 80 up and down along the rail 82, and a ball screw (not shown).
昇降体８０の下面側には、適宜チャック装置（図示せず）により保持部１７が取り付けられる。保持部１７はモータ８４により水平面内で回転されるようになっている。
また、保持部１７は、昇降体８０に設けたエアシリンダ装置８５によって、昇降体８０に対して上下動可能になっている。
The holding part 17 is attached to the lower surface side of the elevating body 80 by a chuck device (not shown) as appropriate. The holding part 17 is rotated in a horizontal plane by a motor 84.
The holding portion 17 can be moved up and down with respect to the lifting body 80 by an air cylinder device 85 provided on the lifting body 80.
加工装置１０は上記のように構成されている。
続いて動作について説明する。
まず、被加工物Ｗを、保持部１７のテンプレート３３内に位置して、裏面電極２７の下面に加工面を下にして両面テープ等により取り付ける。
次いで、保持部１７を定盤１３の上方に移動させ、縦移動機構７６によって昇降体８０および保持部１７を基本高さ位置に移動させる。また、定盤１３は駆動モータ５０によって回転させておく。この状態で、シリンダ装置８５を駆動し、保持部１７を下降し、定盤１３上面に所要加工圧力となるように押圧して、被加工物Ｗに機械的加工を行い、被加工物Ｗの表面の凸部に上記のように加工変質層Ｘを形成する（図８（ａ）、（ｂ））。なお、機械的加工がCMP加工の場合には、スラリー供給機構からスラリーを定盤１３上に供給しつつ、加工処理を行う。
The processing apparatus 10 is configured as described above.
Next, the operation will be described.
First, the workpiece W is positioned in the template 33 of the holding unit 17 and attached to the lower surface of the back electrode 27 with a double-sided tape or the like with the processing surface down.
Next, the holding unit 17 is moved above the surface plate 13, and the elevating body 80 and the holding unit 17 are moved to the basic height position by the vertical movement mechanism 76. Further, the surface plate 13 is rotated by the drive motor 50. In this state, the cylinder device 85 is driven, the holding portion 17 is lowered, and the upper surface of the surface plate 13 is pressed to a required processing pressure to mechanically process the workpiece W. The work-affected layer X is formed on the surface convex portion as described above (FIGS. 8A and 8B). When the mechanical processing is CMP processing, the processing is performed while supplying the slurry onto the surface plate 13 from the slurry supply mechanism.
所要時間、機械的加工を行った後、縦移動機構７６によって昇降体８０を所要高さまで上昇させ、次いでシリンダ装置８５により保持部１７を図示しないストッパに当接する停止位置まで下降させる。次に、縦移動機構７６によって、保持部１７を基本高さ位置まで下降させる。このときの、被加工物Ｗ下面と電極５４の上面との間隔は200μm程度となるようにするとよい。なお、CMP加工の場合には、この移動途中で、被加工物Ｗに付着したスラリーの除去を行う。
この状態で、反応ガスを電極５４の凹溝（反応ガス供給孔５５）内に供給するとともに、電極５４に高周波電力を印加し、電極５４の表面と被加工物Ｗとの間にプラズマを発生させ、被加工物Ｗにプラズマ処理を行う。プラズマは、長四角状の電極５４の表面に沿って発生する。
After performing the mechanical processing for the required time, the vertical movement mechanism 76 raises the elevating body 80 to the required height, and the cylinder device 85 then lowers the holding portion 17 to a stop position where it abuts against a stopper (not shown). Next, the holding unit 17 is lowered to the basic height position by the vertical movement mechanism 76. At this time, the distance between the lower surface of the workpiece W and the upper surface of the electrode 54 is preferably about 200 μm. In the case of CMP processing, the slurry adhering to the workpiece W is removed during the movement.
In this state, the reactive gas is supplied into the concave groove (reactive gas supply hole 55) of the electrode 54, and high frequency power is applied to the electrode 54 to generate plasma between the surface of the electrode 54 and the workpiece W. Then, plasma processing is performed on the workpiece W. The plasma is generated along the surface of the long rectangular electrode 54.
プラズマ発生部１４において被加工物Ｗにプラズマ処理を行う場合、被加工物Ｗと電極５４との間の間隔を上記に維持したまま、横移動機構７４により、保持部１７を長四角状の電極５４に対して直角方向に横切るようにして等速往復動させるようにする。このように、保持部１７、したがって被加工物Ｗを電極に対して等速往復動させることにより、被加工物Ｗの表面に均等にプラズマ処理がなされる。このプラズマ処理による化学的作用（エッチング作用）は、被加工物Ｗの表面に等方的になされるが、前記のように、機械的加工によって被加工物Ｗの凸部に選択的にスクラッチ等のダメージが形成される（加工変質層Ｘの導入）結果、他の部位に優先して、プラズマ処理によってこの加工変質層Ｘが除去される（加工変質層Ｘの選択的エッチング）のである（図８（ｃ）、（ｄ））。 When plasma processing is performed on the workpiece W in the plasma generation unit 14, the holding unit 17 is made to be a rectangular electrode by the lateral movement mechanism 74 while maintaining the above-described distance between the workpiece W and the electrode 54. It is made to reciprocate at a constant speed so as to cross in a direction perpendicular to 54. As described above, the plasma processing is uniformly performed on the surface of the workpiece W by reciprocating the holding portion 17 and thus the workpiece W with respect to the electrode at a constant speed. The chemical action (etching action) by the plasma treatment is isotropically performed on the surface of the workpiece W, but as described above, the surface of the workpiece W is selectively scratched or the like by mechanical machining. As a result of this (the introduction of the work-affected layer X), this work-affected layer X is removed by plasma treatment in preference to other parts (selective etching of the work-affected layer X) (see FIG. 8 (c), (d)).
上記のように、プラズマは、長四角状の電極の表面に沿って長四角状に発生するが、被加工物Ｗを、電極５４の両長辺に沿って発生するライン状のプラズマの部位を通過するように、被加工物Ｗの大きさ、および電極５４の長さを設定しておく。すなわち、電極５４の短辺に沿って発生するプラズマの部位を被加工物Ｗが通過しないようにする。これにより、被加工物Ｗ表面に均等にプラズマを作用させることができる。プラズマ発生部１４において、プラズマを上記のようにライン状（電極５４の長辺に沿う２本のライン状）に発生させ、被加工物Ｗを、このライン状のプラズマを横切るように移動させる構成は、プラズマを被加工物Ｗに均等に作用させる効果を有するとともに、加工装置１０を簡易化、小型化できる利点がある。
なお、プラズマ処理の間、反応ガスは、電極５４の周囲に形成された吸引孔６６から、吸引機構により外部に排出される。
上記機械的加工とプラズマ処理とを必要に応じて複数回繰り返すことによって、被加工物Ｗ表面の平坦化が良好に行える（図８（ｂ）、（ｃ））。
As described above, the plasma is generated in a long rectangular shape along the surface of the long rectangular electrode. However, the workpiece W is moved along the long side of the electrode 54 in the line-shaped plasma region. The size of the workpiece W and the length of the electrode 54 are set so as to pass through. That is, the workpiece W is prevented from passing through the portion of the plasma generated along the short side of the electrode 54. Thereby, plasma can be made to act uniformly on the surface of the workpiece W. In the plasma generator 14, the plasma is generated in a line shape (two lines along the long side of the electrode 54) as described above, and the workpiece W is moved across the line-shaped plasma. Has the effect of causing plasma to act evenly on the workpiece W and has the advantage that the processing apparatus 10 can be simplified and miniaturized.
During the plasma processing, the reaction gas is discharged to the outside by a suction mechanism from a suction hole 66 formed around the electrode 54.
By repeating the mechanical processing and the plasma treatment a plurality of times as necessary, the surface of the workpiece W can be satisfactorily flattened (FIGS. 8B and 8C).
なお、プラズマ発生部１４をリング状の定盤１３内に配置するのでなく、単に機械的加工部１２とプラズマ発生部１４とを隣接して配置するのでもよい。
また、プラズマ発生部１４において、プラズマをライン状に発生させるのでなく、電極を水平面内において複数配置し、プラズマを水平面内で発生させ、被加工物の表面全体を同時にプラズマ処理するようにしてもよい。
また、プラズマ発生部におけるプラズマ発生機構は、必ずしも高周波電源を用いるのでなく、例えば、マイクロ波によって発生させるなどしてもよい。以上のように、機械的加工部１２によって被加工物Ｗの表面に形成される加工変質層Ｘを、電極５４を用いたプラズマ発生により除去することができる。よって、加工変質層Ｘが除去された高品質な加工物を得ることができ、例えば、パワーデバイス用の材料等として有用である。
Instead of arranging the plasma generation unit 14 in the ring-shaped surface plate 13, the mechanical processing unit 12 and the plasma generation unit 14 may be arranged adjacent to each other.
Further, in the plasma generation unit 14, instead of generating plasma in a line shape, a plurality of electrodes are arranged in a horizontal plane, plasma is generated in the horizontal plane, and the entire surface of the workpiece is simultaneously plasma processed. Good.
The plasma generation mechanism in the plasma generation unit does not necessarily use a high-frequency power source, but may be generated by, for example, microwaves. As described above, the work-affected layer X formed on the surface of the workpiece W by the mechanical processing unit 12 can be removed by the generation of plasma using the electrode 54. Therefore, it is possible to obtain a high-quality processed product from which the work-affected layer X has been removed, which is useful as a material for a power device, for example.
以下に実施例を示す。
上記実施の形態に係る加工装置１０を用いてSiC試料（基板）を研磨した。
SiC試料は、2μm程度の凹凸を形成したSiC試料である。試料は、シャドウマスクを用いて試料にアルミニウムを真空蒸着し、その後、P-CVMによる加工を行って作製した。アルミニウムが蒸着されている部分は加工されず、それ以外の部分は加工されるため、凹凸のある試料が作製される。機械的加工部１２での加工条件は、研磨剤にSiC研磨紙（粒径35μm）を使用し、定盤・試料回転速度は共に15rpm、圧力は50kPaとした。P-CVM加工部（プラズマ発生部１４）での加工条件は、反応ガスに、He：SF６=99.4：0.6のガスを使用し、ガス流量は1.5L/min、電極-試料間距離は0.3mm、印加電力は50Wとした。大気開放型のプラズマ処理であるため、電極周辺の雰囲気を空気から反応ガスに置換する必要がある。そこで、プラズマ発光分光法を用いて窒素分子ピークが一定になるまでパージを行い、パージ時間を１分間とした。
研磨時間は、機械的加工部１２で10分間、P-CVM加工部（プラズマ発生部１４）でも10分間とした。表面形状および表面粗さの測定には、白色干渉計（zygo New View200）を用いた。加工前と加工後の凹凸のP-V値を求め、その減少速度を段差解消速度と定義し、評価した。
Examples are shown below.
The SiC sample (substrate) was polished using the processing apparatus 10 according to the above embodiment.
The SiC sample is an SiC sample having irregularities of about 2 μm. The sample was prepared by vacuum-depositing aluminum on the sample using a shadow mask and then processing by P-CVM. Since the portion where aluminum is deposited is not processed and the other portions are processed, an uneven sample is produced. The processing conditions in the mechanical processing unit 12 were SiC abrasive paper (particle size: 35 μm) as the abrasive, both the platen and sample rotation speed were 15 rpm, and the pressure was 50 kPa. The processing conditions in the P-CVM processing section (plasma generating section 14) are as follows: He: SF 6 = 99.4: 0.6 is used as the reaction gas, the gas flow rate is 1.5 L / min, and the electrode-sample distance is 0.3. mm, and the applied power was 50 W. Since it is a plasma treatment that is open to the atmosphere, it is necessary to replace the atmosphere around the electrode with air from the reaction gas. Therefore, purging was performed using plasma emission spectroscopy until the nitrogen molecular peak became constant, and the purge time was 1 minute.
The polishing time was 10 minutes for the mechanically processed portion 12 and 10 minutes for the P-CVM processed portion (plasma generating portion 14). A white interferometer (zygo New View 200) was used for the measurement of the surface shape and the surface roughness. The PV value of unevenness before and after processing was obtained, and the rate of decrease was defined as the step resolution rate and evaluated.
機械加工のみを行った場合の加工速度は388nm/hであった。機械加工における段差解消速度は加工速度と等しいと考えられるので、機械加工のみの段差解消速度は388nm/hと考えられる。図９（ａ）に加工前の表面形状、図９（ｂ）に上記加工後の表面形状、図９（ｃ）に加工前のA-A´断面形状、図９（ｄ）に上記加工後のB-B´断面形状を示す。加工前後の断面形状の比較から、試料表面の凹凸のP-V値が約1800nmから約1300nmに減少していることがわかる。12箇所の平均値から段差解消速度は907nm/h程度であった。機械加工のみの場合と比較して、機械加工とP-CVM加工を併用した場合は約2.3倍の段差解消速度が得られた。機械加工+P-CVM加工後の凹部と凸部の表面粗さを測定した結果を図１０（ａ）、図１０（ｂ）にそれぞれ示す。凹部と凸部の表面粗さは大きく異なり、凹部は比較的滑らかであり、P-CVM加工前の表面と大差ないが、凸部はP-CVM加工後の粗さが大きくなっていることがわかる。これは、凸部のみに機械加工によるスクラッチ状のダメージ（加工変質層）の導入が多数行われた結果と考えられ、加工変質層におけるP-CVM加工速度の増大が段差解消速度向上に寄与していると考えられる。
なお、上記ではP-CVM加工において反応ガスにSF６を用いたが、他のフッ素系ガスでも同様である。
また、試料としてGaNを、P-CVM加工において反応ガスにHe+Cl２ガスを用いた場合にも上記と同様である。
また、試料としてダイヤモンドを、P-CVM加工において反応ガスにHe+O２ガスを用いた場合にも上記と同様である。
また、機械加工において、スラリーを用いたCMP加工を行った場合にも上記と同様である。
The machining speed when only machining was performed was 388 nm / h. Since the step elimination rate in machining is considered to be equal to the machining rate, the step elimination rate only for machining is considered to be 388 nm / h. 9A shows the surface shape before processing, FIG. 9B shows the surface shape after processing, FIG. 9C shows the AA ′ cross-sectional shape before processing, and FIG. 9D shows BB after the processing. 'Show cross-sectional shape. From the comparison of cross-sectional shapes before and after processing, it can be seen that the PV value of the irregularities on the sample surface has decreased from about 1800 nm to about 1300 nm. From the average value of 12 locations, the step resolution rate was about 907 nm / h. Compared to machining only, the step resolution speed was approximately 2.3 times higher when machining and P-CVM machining were used together. The results of measuring the surface roughness of the concave and convex portions after machining + P-CVM processing are shown in FIG. 10 (a) and FIG. 10 (b), respectively. The surface roughness of the concave and convex parts is very different, and the concave part is relatively smooth and not much different from the surface before P-CVM processing, but the convex part has a large roughness after P-CVM processing Recognize. This is thought to be the result of many scratch-like damages (machined layer) caused by machining on only the convex part. The increase in the P-CVM machining speed in the machined layer contributes to the improvement of the step resolution rate. It is thought that.
In the above, SF 6 is used as the reaction gas in the P-CVM processing, but the same applies to other fluorine-based gases.
The same applies to the case where GaN is used as a sample and He + Cl 2 gas is used as a reaction gas in P-CVM processing.
The same applies to the case where diamond is used as a sample and He + O 2 gas is used as a reaction gas in P-CVM processing.
The same applies to the case where CMP processing using slurry is performed in machining.
１０ 加工装置、１２ 機械的加工部、１３ 定盤、１４ プラズマ発生部、１５ ガスボンベ、１６ ガスボンベ、１７ 保持部、１８ 移動機構、１９ 制御部、２０ 連結部、２１ 球座、２２ ストッパ部、２４ ヘッド本体、２５ 当接体、２６ 支持部、２７ 裏面電極、２８ 固定具、２９ ボルト、３０ 当接部、３１ 座部、３２ スプリング、３３ テンプレート、３４ 吸引機構、３５ カバー部材、３６ ボルト、４０ 外筒体、４１ 内筒体、４２ 基台、４３ 支持台、４４ 支持筒体、４５ 軸受、４７ 支持リング、４８ 軸受、５０ 駆動モータ、５１ プーリ、５２ ベルト、５４ 電極、５５ 反応ガス供給孔、５６ 絞り孔、５７ 大径孔、５８ ガス溜まり、６０ ガス供給管、６１ 端子、６２ 箱体、６３ ベースプレート、６４ ステー、６６ 吸引孔、６７ カバー、６８ 継手、７０ 支持部、７２ カバー、７４ 横移動機構、７６ 縦移動機構、７７ レール、７８ サーボモータ、８０ 昇降体、８２ レール、８３ サーボモータ、８４ モータ、８５ エアシリンダ装置、Ｗ 被加工物、Ｓ 空間部、Ｘ 加工変質層 DESCRIPTION OF SYMBOLS 10 Processing apparatus, 12 Mechanical processing part, 13 Surface plate, 14 Plasma generation part, 15 Gas cylinder, 16 Gas cylinder, 17 Holding part, 18 Moving mechanism, 19 Control part, 20 Connection part, 21 Ball seat, 22 Stopper part, 24 Head body, 25 Contact body, 26 Support portion, 27 Back electrode, 28 Fixing tool, 29 Bolt, 30 Contact portion, 31 Seat portion, 32 Spring, 33 Template, 34 Suction mechanism, 35 Cover member, 36 Bolt, 40 Outer cylinder, 41 Inner cylinder, 42 Base, 43 Support base, 44 Support cylinder, 45 Bearing, 47 Support ring, 48 Bearing, 50 Drive motor, 51 Pulley, 52 Belt, 54 Electrode, 55 Reaction gas supply hole , 56 Restriction hole, 57 Large diameter hole, 58 Gas pool, 60 Gas supply pipe, 61 Terminal, 62 Box, 63 Base plate 64 stays, 66 suction holes, 67 covers, 68 joints, 70 support sections, 72 covers, 74 lateral movement mechanisms, 76 vertical movement mechanisms, 77 rails, 78 servo motors, 80 lifts, 82 rails, 83 servo motors, 84 motors , 85 Air cylinder device, W work piece, S space part, X processing deteriorated layer
Claims (15)
プラズマ発生部において、前記機械的加工部で形成された前記加工変質層の少なくとも一部の表面にプラズマを化学的に作用させ、前記加工変質層の少なくとも一部を除去する工程を含み、
該両工程を交互に、相互に異なる場所で行う加工方法であって、
リング状の定盤を備える前記機械的加工部と、前記リング状の定盤内に配置された前記プラズマ発生部を有する加工装置を用い、被加工物を保持部により保持した状態で前記機械的加工部と前記プラズマ発生部との間を移動させて被加工物の加工を行うことを特徴とする加工方法。 Forming a work-affected layer by mechanical action on at least a part of the surface of the workpiece in the mechanically processed portion;
In the plasma generation unit, the method includes chemically causing plasma to act on at least a part of the surface of the work-affected layer formed in the mechanically processed part, and removing at least a part of the work-affected layer.
A processing method in which the two steps are alternately performed in different places ,
The mechanical processing unit having the ring-shaped surface plate and the processing device having the plasma generating unit disposed in the ring-shaped surface plate, the mechanical object in a state where the workpiece is held by the holding unit. A processing method characterized in that a workpiece is processed by moving between a processing section and the plasma generation section.
プラズマ発生部において、前記機械的加工部で形成された前記加工変質層の少なくとも一部の表面にプラズマを化学的に作用させ、前記加工変質層の少なくとも一部を除去する工程を含み、
該両工程を交互に、相互に異なる場所で行う加工方法であって、
前記プラズマ発生部において、長孔状の反応ガス供給孔を有する電極によりプラズマをライン状に発生させ、被加工物を該ライン状のプラズマに対して往復運動させて前記加工変質層を除去することを特徴とする加工方法。 Forming a work-affected layer by mechanical action on at least a part of the surface of the workpiece in the mechanically processed portion;
In the plasma generation unit, the method includes chemically causing plasma to act on at least a part of the surface of the work-affected layer formed in the mechanically processed part, and removing at least a part of the work-affected layer.
A processing method in which the two steps are alternately performed in different places ,
In the plasma generating section, plasma is generated in a line shape by an electrode having a long hole-like reaction gas supply hole, and the work-affected layer is removed by reciprocating the workpiece with respect to the line-shaped plasma. A processing method characterized by
プラズマ発生部において、前記機械的加工部で形成された前記加工変質層の少なくとも一部の表面にプラズマを化学的に作用させ、前記加工変質層の少なくとも一部を除去する工程を含み、
該両工程を交互に、相互に異なる場所で行う加工方法であって、
前記機械的加工部において、スラリーを供給しつつケミカルメカニカルポリシング（ＣＭＰ）により前記加工変質層を形成することを特徴とする加工方法。 Forming a work-affected layer by mechanical action on at least a part of the surface of the workpiece in the mechanically processed portion;
In the plasma generation unit, the method includes chemically causing plasma to act on at least a part of the surface of the work-affected layer formed in the mechanically processed part, and removing at least a part of the work-affected layer.
A processing method in which the two steps are alternately performed in different places ,
In the mechanical processing portion, the processing-affected layer is formed by chemical mechanical polishing (CMP) while supplying slurry.
プラズマ発生部において、前記機械的加工部で形成された前記加工変質層の少なくとも一部の表面にプラズマを化学的に作用させ、前記加工変質層の少なくとも一部を除去する工程を含み、
該両工程を交互に、相互に異なる場所で行う加工方法であって、
SiC、GaNもしくはダイヤモンドの高硬度材料からなる被加工物を加工することを特徴とする加工方法。 Forming a work-affected layer by mechanical action on at least a part of the surface of the workpiece in the mechanically processed portion;
In the plasma generation unit, the method includes chemically causing plasma to act on at least a part of the surface of the work-affected layer formed in the mechanically processed part, and removing at least a part of the work-affected layer.
A processing method in which the two steps are alternately performed in different places ,
A processing method characterized by processing a workpiece made of a high hardness material such as SiC, GaN or diamond.
該機械的加工部に隣接して配置され、前記機械的加工部により形成された加工変質層の少なくとも一部の表面にプラズマを化学的に作用させ、前記加工変質層の少なくとも一部を除去するプラズマ発生部と、
被加工物を保持する保持部と、
該保持部に保持された被加工物を前記機械的加工部と前記プラズマ発生部との間に亘って移動させる移動機構とを具備する加工装置であって、
前記機械的加工部が所要幅のリング状の定盤を有し、
前記プラズマ発生部が前記リング状の定盤の内部に配置されていることを特徴とする加工装置。 A mechanically processed portion that contacts the workpiece and forms a work-affected layer on at least a portion of the surface of the workpiece by relative movement between the workpiece and the workpiece;
Plasma is chemically applied to the surface of at least a part of the work-affected layer formed by the mechanically-worked part, which is arranged adjacent to the mechanically-worked part, thereby removing at least a part of the work-affected layer. A plasma generator;
A holding part for holding a workpiece;
A processing apparatus comprising a moving mechanism that moves a workpiece held by the holding unit between the mechanical processing unit and the plasma generation unit ,
The mechanically processed portion has a ring-shaped surface plate with a required width,
The processing apparatus, wherein the plasma generating unit is disposed inside the ring-shaped surface plate.
該機械的加工部に隣接して配置され、前記機械的加工部により形成された加工変質層の少なくとも一部の表面にプラズマを化学的に作用させ、前記加工変質層の少なくとも一部を除去するプラズマ発生部と、
被加工物を保持する保持部と、
該保持部に保持された被加工物を前記機械的加工部と前記プラズマ発生部との間に亘って移動させる移動機構とを具備する加工装置であって、
前記プラズマ発生部は高周波電力が印加される電極を有し、前記保持部は被加工物が保持される裏面電極を有し、前記電極の周囲の部材および前記裏面電極側が接地されていることを特徴とする加工装置。 A mechanically processed portion that contacts the workpiece and forms a work-affected layer on at least a portion of the surface of the workpiece by relative movement between the workpiece and the workpiece;
Plasma is chemically applied to the surface of at least a part of the work-affected layer formed by the mechanically-worked part, which is arranged adjacent to the mechanically-worked part, thereby removing at least a part of the work-affected layer. A plasma generator;
A holding part for holding a workpiece;
A processing apparatus comprising a moving mechanism that moves a workpiece held by the holding unit between the mechanical processing unit and the plasma generation unit ,
The plasma generation unit has an electrode to which high-frequency power is applied, the holding unit has a back electrode on which a workpiece is held, and a member around the electrode and the back electrode side are grounded. A processing device characterized.
該機械的加工部に隣接して配置され、前記機械的加工部により形成された加工変質層の少なくとも一部の表面にプラズマを化学的に作用させ、前記加工変質層の少なくとも一部を除去するプラズマ発生部と、
被加工物を保持する保持部と、
該保持部に保持された被加工物を前記機械的加工部と前記プラズマ発生部との間に亘って移動させる移動機構とを具備する加工装置であって、
前記機械的加工部は、スラリーを供給しつつ被加工物の研磨を行うケミカルメカニカルポリシング（ＣＭＰ）装置であることを特徴とする加工装置。 A mechanically processed portion that contacts the workpiece and forms a work-affected layer on at least a portion of the surface of the workpiece by relative movement between the workpiece and the workpiece;
Plasma is chemically applied to the surface of at least a part of the work-affected layer formed by the mechanically-worked part, which is arranged adjacent to the mechanically-worked part, thereby removing at least a part of the work-affected layer. A plasma generator;
A holding part for holding a workpiece;
A processing apparatus comprising a moving mechanism that moves a workpiece held by the holding unit between the mechanical processing unit and the plasma generation unit ,
The mechanical processing unit is a chemical mechanical polishing (CMP) apparatus that polishes a workpiece while supplying slurry.
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