JP6287190B2 - Temporary fixing resin composition, temporary fixing resin film, and temporary fixing resin film sheet - Google Patents

Description

  The present invention relates to a temporarily fixing resin composition, a temporarily fixing resin film, and a temporarily fixing resin film sheet used when processing a semiconductor wafer.

  In the field of semiconductor devices, the growth of technology related to a package called SIP (System in Package) in which a plurality of semiconductor elements are stacked is remarkable. In the SIP type package, since a large number of semiconductor elements are stacked, the semiconductor element is required to be as thin as possible. Such a semiconductor element is manufactured, for example, by incorporating an integrated circuit into a semiconductor wafer having a certain thickness and then separating the thinned semiconductor wafer by grinding the back surface of the semiconductor wafer. The processing of the semiconductor wafer is performed by temporarily fixing the semiconductor wafer to a support with a temporarily fixing material (see, for example, Patent Document 1).

  Conventionally, the wire bonding method has been the mainstream for connecting semiconductor elements, but in recent years, a connection method called TSV (through silicon via) has attracted attention and has been actively studied. In the case of manufacturing a semiconductor element having a through electrode, a process for forming a through electrode is further performed after the semiconductor wafer is thinned. In this case, a high temperature process for heating the semiconductor wafer to about 300 ° C. is involved.

International Publication No. 2008/045669 Pamphlet

  Therefore, the temporary fixing material used in the above manufacturing process is required to have an adhesive property for firmly fixing the support and the semiconductor wafer during the grinding of the semiconductor wafer, and heat resistance in a high-temperature process. . On the other hand, the temporary fixing material is required to have releasability so that the processed semiconductor wafer can be easily separated from the support. In particular, it is required that the semiconductor wafer and the support can be separated at a temperature as low as possible so as not to cause damage and warpage of the semiconductor chip, and that the temporary fixing material does not remain on the semiconductor wafer.

  The temporary fixing material described in Patent Document 1 tends to have insufficient heat resistance for a high-temperature process when a through electrode is formed on a semiconductor wafer and a high-temperature process when a semiconductor wafer having a through-electrode is connected to each other. . If the heat resistance of the temporarily fixing material is insufficient, there is a tendency that the temporarily fixing material is thermally decomposed during the high temperature process and the semiconductor wafer is peeled off from the support.

  The use of a resin excellent in general heat resistance such as polyimide having a high glass transition temperature (Tg) can be considered. However, in order to make it easy to ensure flatness during processing, when the temporary fixing material is made into a film, the glass transition temperature of the resin is high, so that the semiconductor wafer and the support are sufficiently bonded together at a high temperature. This must be done and can damage the semiconductor wafer. For this reason, the film-like temporary fixing material is required to have a low temperature sticking property that can sufficiently fix the semiconductor wafer and the support even if they are bonded together at a low temperature.

  The present invention has been made in view of the above circumstances, has excellent low temperature sticking property and sufficient heat resistance, can sufficiently fix a semiconductor wafer to a support, and supports a processed semiconductor wafer. Temporary fixing resin composition capable of forming a film-like temporary fixing material that can be easily separated from the body and the temporary fixing material, and a temporary fixing resin film using the temporary fixing resin composition, and It aims at providing the resin film sheet for temporary fixation.

  The present invention provides a temporary fixing step of temporarily fixing a semiconductor wafer to a support via a film-like temporary fixing material, a processing step of processing the semiconductor wafer temporarily fixed to the support, and a support of the processed semiconductor wafer A resin composition for temporary fixing for forming a film-like temporary fixing material used in a method for processing a semiconductor wafer, comprising: a separation step of separating the body and the film-like temporary fixing material; and (A) heat A temporary fixing resin composition comprising a plastic resin and (B) a silicone-modified resin is provided.

  According to the resin composition for temporary fixing according to the present invention, a film-like temporary fixing material having excellent low-temperature sticking property and sufficient heat resistance and capable of sufficiently fixing a semiconductor wafer to a support is formed. Can do. This film-like temporary fixing material can easily separate the processed semiconductor wafer from the support and can be easily peeled off from the processed semiconductor wafer. It is possible to easily separate the semiconductor wafer from the support and the temporary fixing material.

  In the resin composition for temporary fixing according to the present invention, the (B) silicone-modified resin is preferably a silicone-modified alkyd resin. By using such a silicone-modified resin, the adhesiveness and peelability of the film-like temporary fixing material formed from the temporary fixing resin composition can be made compatible at a high level.

  When the resin composition for temporary fixing according to the present invention includes a silicone-modified alkyd resin, it is preferable to further include a crosslinking agent capable of thermally crosslinking the silicone-modified alkyd resin. In this case, the heat resistance and peelability of the film-like temporary fixing material formed from the temporary fixing resin composition can be further improved.

  The (A) thermoplastic resin is preferably a (meth) acrylic copolymer having a reactive group. In this case, the heat resistance and the low temperature sticking property of the film-like temporarily fixing material formed from the temporarily fixing resin composition can be made compatible at a higher level.

  The temporarily fixing resin composition according to the present invention preferably further contains (C) a curing accelerator. In this case, it becomes easy to achieve both curability and storage stability of the temporary fixing resin composition according to the present invention.

  The temporarily fixing resin composition according to the present invention preferably further contains (D) a silicone compound other than the component (B). In this case, the peelability can be further improved.

  The temporarily fixing resin composition according to the present invention preferably further contains (E) an inorganic filler. In this case, characteristics such as thixotropy, low thermal expansion, and low hygroscopicity can be imparted to the temporarily fixing resin composition according to the present invention.

  The present invention also provides a temporary fixing resin film formed by forming the temporary fixing resin composition according to the present invention into a film shape. By using such a temporarily fixing resin film, the semiconductor wafer can be processed efficiently. Thereby, a semiconductor element suitable for a SIP package can be efficiently manufactured, and further, a semiconductor device including the semiconductor element can be efficiently manufactured.

  The present invention also provides a temporary fixing resin film sheet comprising a support film having releasability and the temporary fixing resin film according to the present invention provided on the support film. According to the resin film sheet for temporary fixing according to the present invention, the resin film for temporary fixing according to the present invention can be easily transferred to a semiconductor wafer or a support, and the semiconductor wafer can be processed efficiently.

  According to the present invention, it has excellent low-temperature sticking property and sufficient heat resistance, can sufficiently fix the semiconductor wafer to the support, and easily separates the processed semiconductor wafer from the support and the temporary fixing material. A temporary fixing resin composition capable of forming a film-like temporary fixing material that can be formed, a temporary fixing resin film using the temporary fixing resin composition, and a temporary fixing resin film sheet are provided. be able to.

FIG. 1 (A) is a top view showing one embodiment of a resin film sheet for temporary fixing according to the present invention, and FIG. 1 (B) is a schematic cross section taken along the line II in FIG. 1 (A). FIG. Fig. 2 (A) is a top view showing another embodiment of the resin film sheet for temporary fixing according to the present invention, and Fig. 2 (B) is a schematic view taken along line II-II in Fig. 2 (A). It is sectional drawing. 3A, 3B, and 3C are schematic cross-sectional views for explaining one embodiment of a method for processing a semiconductor wafer, and FIG. 3D is a semiconductor after processing. It is a top view which shows a wafer. FIG. 4 is a schematic cross-sectional view for explaining an embodiment of a separation process for separating a processed semiconductor wafer from a support and a film-like temporary fixing material. FIG. 5 is a schematic cross-sectional view for explaining an embodiment of a method for manufacturing a semiconductor device.

  Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the drawings. In the drawings, the same or corresponding parts are denoted by the same reference numerals, and redundant description is omitted. Further, the dimensional ratios in the drawings are not limited to the illustrated ratios.

[Temporary fixing resin composition]
The temporarily fixing resin composition according to the present embodiment includes a temporary fixing step of temporarily fixing a semiconductor wafer to a support via a film-like temporary fixing material, and a processing step of processing the semiconductor wafer temporarily fixed to the support. And a separation step of separating the processed semiconductor wafer from the support and the film-like temporary fixing material, and a temporarily fixing resin composition for forming a temporary fixing film used in a semiconductor wafer processing method. And (A) a thermoplastic resin and (B) a silicone-modified resin.

  The thermoplastic resin (A) used in the present embodiment is not particularly limited as long as it is a resin having thermoplasticity or a resin that has thermoplasticity at least in an uncured state and forms a crosslinked structure after heating.

  As the thermoplastic resin, a (meth) acrylic copolymer having a reactive group (hereinafter sometimes referred to as “reactive group-containing (meth) acrylic copolymer”) is preferable. In the present specification, (meth) acryl is used to mean either acrylic or methacrylic.

  Examples of the (meth) acrylic copolymer include a (meth) acrylic ester copolymer and acrylic rubber, and acrylic rubber is more preferable. The acrylic rubber is preferably formed by copolymerization of a monomer mainly composed of an acrylic ester and selected from (meth) acrylic ester and acrylonitrile. Examples of (meth) acrylic acid esters include methyl acrylate, ethyl acrylate, propyl acrylate, isopropyl acrylate, butyl acrylate, isobutyl acrylate, hexyl acrylate, cyclohexyl acrylate, 2-ethylhexyl acrylate, lauryl acrylate, methyl methacrylate, ethyl methacrylate, and propyl. Examples include methacrylate, isopropyl acrylate, butyl methacrylate, isobutyl methacrylate, hexyl methacrylate, cyclohexyl methacrylate, 2-ethylhexyl methacrylate, and lauryl methacrylate. Specific examples of the copolymer based on a combination of monomers include a copolymer composed of butyl acrylate and acrylonitrile, and a copolymer composed of ethyl acrylate and acrylonitrile.

  The (meth) acrylic copolymer having a reactive group can be obtained by copolymerizing a monomer composition containing a (meth) acrylic monomer having a reactive group and the above monomer.

  As the reactive group, an epoxy group, a carboxyl group, an acryloyl group, a methacryloyl group, a hydroxyl group, and an episulfide group are preferable from the viewpoint of improving heat resistance. Among them, a glycidyl group and a carboxyl group are more preferable from the viewpoint of crosslinkability. When an epoxy group is selected as the reactive group, examples of the (meth) acrylic monomer having a reactive group include glycidyl acrylate, 4-hydroxybutyl acrylate glycidyl ether, 3,4-epoxycyclohexylmethyl acrylate, glycidyl methacrylate, 4 -Hydroxybutyl methacrylate glycidyl ether, 3,4-epoxycyclohexylmethyl methacrylate. Among these, glycidyl acrylate and glycidyl methacrylate are preferable from the viewpoint of heat resistance.

  (A) It is preferable that Tg of a thermoplastic resin is -50 degreeC-50 degreeC. (A) When the Tg of the thermoplastic resin is 50 ° C. or lower, flexibility can be secured when the film-like temporary fixing material is formed from the temporary fixing resin composition, and a decrease in low-temperature sticking property can be suppressed. Further, when bumps or the like are present on the semiconductor wafer, it is easy to embed bumps at 150 ° C. or lower. On the other hand, when the Tg of the thermoplastic resin (A) is −50 ° C. or higher, the handleability and peeling due to excessively high flexibility when a film-like temporary fixing material is formed from the temporary fixing resin composition. The decline in sex can be suppressed.

  (A) Tg of a thermoplastic resin is a midpoint glass transition temperature value when (A) a thermoplastic resin is measured using differential scanning calorimetry (DSC). Specifically, the glass transition temperature is a midpoint glass transition temperature calculated by a method according to JIS K 7121: 1987 by measuring a change in calorie under conditions of a temperature rising rate of 10 ° C./minute and a measurement temperature of −80 to 80 ° C.

  (A) The weight average molecular weight of the thermoplastic resin is preferably 100,000 or more and 2,000,000 or less. When the weight average molecular weight is 100,000 or more, it becomes easy to ensure the heat resistance of the temporarily fixing resin composition. On the other hand, when the weight average molecular weight is 2 million or less, when a film-like temporary fixing material is formed from the temporary fixing resin composition, it is possible to suppress a decrease in flow and a decrease in pastability. In addition, a weight average molecular weight is a polystyrene conversion value using the calibration curve by a standard polystyrene by the gel permeation chromatography method (GPC).

  When the (meth) acrylic copolymer having a reactive group contains glycidyl acrylate and / or glycidyl methacrylate as a copolymerization component, the blending amount thereof is 0.1 to 20% by mass based on the total amount of the copolymerization component. It is preferable that it is 0.5-15 mass%, and it is further more preferable that it is 1.0-10 mass%. When the blending amount is within the above range, when a film-like temporary fixing material is formed from the temporary fixing resin composition, a decrease in flexibility can be suppressed while sufficiently securing heat resistance.

  As the (meth) acrylic copolymer having a reactive group as described above, one obtained by a polymerization method such as pearl polymerization or solution polymerization may be used, or HTR-860P-3CSP (Nagase ChemteX Corporation) Commercial products such as a company name, product name) may be used.

  The (B) silicone-modified resin used in the present embodiment is not particularly limited as long as it is a resin modified with silicone.

  As the silicone-modified resin, a silicone-modified alkyd resin is preferable.

  When the resin composition for temporary fixing contains a silicone-modified alkyd resin, a solvent is used at a low temperature of 100 ° C. or lower when the film-shaped temporary fixing material formed from the resin composition for temporary fixing is peeled off from the semiconductor wafer. It can be easily peeled off without any problems.

  As a method for obtaining a silicone-modified alkyd resin, for example, (i) a normal synthesis reaction for obtaining an alkyd resin, that is, when reacting a polyhydric alcohol with a fatty acid, a polybasic acid, etc., the organopolysiloxane is simultaneously reacted as an alcohol component. And (ii) a method of reacting a general alkyd resin synthesized in advance with an organopolysiloxane.

  Examples of the polyhydric alcohol used as a raw material for the alkyd resin include dihydric alcohols such as ethylene glycol, diethylene glycol, triethylene glycol, propylene glycol, trimethylene glycol, tetramethylene glycol, and neopentyl glycol, glycerin, trimethylolethane, Examples thereof include trihydric alcohols such as trimethylolpropane, and tetrahydric or higher polyhydric alcohols such as diglycerin, triglycerin, pentaerythritol, dipentaerythritol, mannitol, and sorbit. These may be used individually by 1 type and may be used in combination of 2 or more type.

  Examples of the polybasic acid used as a raw material for the alkyd resin include aromatic polybasic acids such as phthalic anhydride, terephthalic acid, isophthalic acid, and trimetic anhydride, and aliphatic saturated polybasic acids such as succinic acid, adipic acid, and sebacic acid. Aliphatic unsaturated polybasic acids such as basic acid, maleic acid, maleic anhydride, fumaric acid, itaconic acid, citraconic anhydride, cyclopentadiene-maleic anhydride adduct, terpene-maleic anhydride adduct, rosin-maleic anhydride Examples thereof include polybasic acids by Diels-Alder reaction such as acid adducts. These may be used individually by 1 type and may be used in combination of 2 or more type.

  The alkyd resin may further contain a modifier or a crosslinking agent.

  Examples of the modifier include octylic acid, lauric acid, palmitic acid, stearic acid, oleic acid, linoleic acid, linolenic acid, eleostearic acid, ricinoleic acid, dehydrated ricinoleic acid, or coconut oil, linseed oil, kiri oil, castor Oil, dehydrated castor oil, soybean oil, safflower oil, and these fatty acids can be used. These may be used individually by 1 type and may be used in combination of 2 or more type.

  When the resin composition for temporary fixing according to the present embodiment contains a silicone-modified alkyd resin, it is preferable to further include a crosslinking agent capable of thermally crosslinking the silicone-modified alkyd resin, or a crosslinking agent and a catalyst. Examples of such crosslinking agents include amino resins such as melamine resins and urea resins. In this case, the heat resistance and peelability of the film-like temporary fixing material formed from the temporary fixing resin composition can be further improved.

  Examples of the crosslinking agent include amino resins such as melamine resins and urea resins, urethane resins, epoxy resins, and phenol resins. Among these, when an amino resin is used, an amino alkyd resin crosslinked with an amino resin is preferably obtained. Examples of such silicone-modified alkyd resins include Tesfine 319 and TA31-209E (trade name, manufactured by Hitachi Chemical Polymer Co., Ltd.). A crosslinking agent may be used individually by 1 type, and may be used in combination of 2 or more type.

  In the silicone-modified alkyd resin, an acidic catalyst can be used as a curing catalyst. There is no restriction | limiting in particular as an acidic catalyst, It can select suitably from well-known acidic catalysts as a crosslinking reaction catalyst of an alkyd resin, and can use it. As such an acidic catalyst, for example, an organic acidic catalyst such as p-toluenesulfonic acid and methanesulfonic acid is suitable. An acidic catalyst may be used individually by 1 type, and may be used in combination of 2 or more type. Moreover, the compounding quantity of an acidic catalyst is 0.1-40 mass parts normally with respect to a total of 100 mass parts of alkyd resin and a crosslinking agent, Preferably it is 0.5-30 mass parts, More preferably, it is 1-20 mass parts. It is selected in the range.

  The surface free energy of the silicone-modified alkyd resin is preferably 15 to 30 mN / m. When the surface free energy of the silicone-modified alkyd resin is in such a range, both the heat resistance and the peelability of the film-like temporary fixing material formed from the temporary fixing resin composition can be achieved. Furthermore, it is more preferable that the resin composition for temporary fixing includes a silicone-modified alkyd resin having a surface free energy of 15 to 27 mN / m from the viewpoint of heat resistance, and a silicone-modified alkyd resin of 15 to 24 mN / m. It is more preferable to include. The surface free energy was measured with a contact angle meter (manufactured by Kyowa Interface Science Co., Ltd.) on a 0.3 μm thick film obtained by applying a silicone-modified alkyd resin on a PET film and drying at 150 ° C. for 30 seconds. CA-X type) was used to measure the contact angles of water, ethylene glycol, and methyl iodide, and the surface free energy analysis software (EG-2 manufactured by Kyowa Interface Science Co., Ltd.) was used for calculation.

  The blending amount of the (B) silicone-modified resin in the temporarily fixing resin composition according to the present embodiment is preferably 1 to 50 parts by mass, and 5 to 40 parts by mass with respect to 100 parts by mass of the (A) thermoplastic resin. More preferred. (B) When the compounding quantity of a silicone modified resin exists in the said range, it becomes possible to make compatible the adhesiveness at the time of semiconductor wafer processing, and the peelability after a process.

  The resin composition for temporary fixing according to the present embodiment includes, in addition to (A) a thermoplastic resin and (B) a silicone-modified resin, if necessary, (C) a curing accelerator, (D) other than the above component (B) A silicone compound, (E) inorganic filler, an organic solvent, and other components can be contained.

  (C) Examples of the curing accelerator include imidazoles, dicyandiamide derivatives, dicarboxylic acid dihydrazide, triphenylphosphine, tetraphenylphosphonium tetraphenylborate, 2-ethyl-4-methylimidazole-tetraphenylborate, 1,8-diazabicyclo. [5,4,0] undecene-7-tetraphenylborate and the like. These can be used alone or in combination of two or more.

  When the resin composition for temporary fixing according to the present embodiment contains a (meth) acrylic copolymer having an epoxy group, it contains a curing accelerator that accelerates curing of the epoxy group contained in the acrylic copolymer. Is preferred.

  The blending amount of the (C) curing accelerator in the temporarily fixing resin composition according to this embodiment is preferably 0.01 to 50 parts by mass with respect to 100 parts by mass of (A) the thermoplastic resin, and 0.1 to 20 Part by mass is more preferable. When the blending amount of the curing accelerator is within the above range, it is possible to sufficiently reduce the storage stability while obtaining sufficient curability.

  (D) The silicone compound is not particularly limited as long as it has a polysiloxane structure, and examples thereof include straight silicone oil, non-reactive modified silicone oil, and reactive modified silicone oil. A silicone compound can be used individually by 1 type or in combination of 2 or more types.

  The content of the (D) silicone compound in the temporary fixing resin composition according to the present embodiment is 1. in total with respect to 100 parts by mass of the (A) thermoplastic resin from the viewpoint of the balance between solubility and adhesiveness. 0-100 mass parts is preferable, 5.0-80 mass parts is more preferable, and 10-50 mass parts is still more preferable.

  Examples of the (E) inorganic filler include metal fillers such as silver powder, gold powder, and copper powder; non-metallic inorganic fillers such as silica, alumina, boron nitride, titania, glass, iron oxide, and ceramic. The inorganic filler can be selected according to the desired function. For example, the metal filler can be added for the purpose of imparting thixotropy to the temporarily fixing resin composition, and the nonmetallic inorganic filler is for the purpose of imparting low thermal expansion and low moisture absorption to the temporarily fixing resin composition. Can be added. An inorganic filler can be used individually by 1 type or in combination of 2 or more types.

  The inorganic filler preferably has an organic group on the surface. Dispersibility in an organic solvent when preparing a resin composition for temporary fixing, and a film-like temporary fixing material formed from the resin composition for temporary fixing, because the surface of the inorganic filler is modified with an organic group It becomes easy to improve the adhesiveness and heat resistance.

  The inorganic filler having an organic group on the surface can be obtained, for example, by mixing a silane coupling agent represented by the following general formula (B-1) and an inorganic filler and stirring at a temperature of 30 ° C. or higher. . It can be confirmed by UV measurement, IR measurement, XPS measurement or the like that the surface of the inorganic filler is modified with an organic group.

In formula (B-1), X represents an organic group selected from the group consisting of a phenyl group, a glycidoxy group, an acryloyl group, a methacryloyl group, a mercapto group, an amino group, a vinyl group, an isocyanate group, and a methacryloxy group, and s Represents an integer of 0 or 1 to 10, and R ¹¹ , R ¹² and R ¹³ each independently represents an alkyl group having 1 to 10 carbon atoms. Examples of the alkyl group having 1 to 10 carbon atoms include methyl group, ethyl group, propyl group, butyl group, pentyl group, hexyl group, heptyl group, octyl group, nonyl group, decyl group, isopropyl group, and isobutyl group. Can be mentioned. A methyl group, an ethyl group, and a pentyl group are preferable because they are easily available. X is preferably an amino group, a glycidoxy group, a mercapto group, or an isocyanate group, and more preferably a glycidoxy group or a mercapto group, from the viewpoint of heat resistance. S in formula (B-1) is preferably 0 to 5, and more preferably 0 to 4 from the viewpoint of suppressing film fluidity during high heat and improving heat resistance.

  Preferred silane coupling agents include, for example, trimethoxyphenylsilane, dimethyldimethoxyphenylsilane, triethoxyphenylsilane, dimethoxymethylphenylsilane, vinyltrimethoxysilane, vinyltriethoxysilane, vinyltris (2-methoxyethoxy) silane, N -(2-aminoethyl) -3-aminopropylmethyldimethoxysilane, N- (2-aminoethyl) -3-aminopropyltrimethoxysilane, 3-aminopropyltriethoxysilane, 3-aminopropyltrimethoxysilane, 3 -Glycidoxypropyltrimethoxysilane, 3-glycidoxypropylmethyldimethoxysilane, 2- (3,4-epoxycyclohexyl) ethyltrimethoxysilane, 3-isocyanatopropyltriethoxy Lan, 3-methacryloxypropyltrimethoxysilane, 3-mercaptopropyltrimethoxysilane, 3-ureidopropyltriethoxysilane, N- (1,3-dimethylbutylidene) -3- (triethoxysilyl) -1-propane Examples include amine, N, N′-bis (3- (trimethoxysilyl) propyl) ethylenediamine, polyoxyethylenepropyltrialkoxysilane, polyethoxydimethylsiloxane, and the like. Among these, 3-aminopropyltriethoxysilane, 3-glycidoxypropyltrimethoxysilane, 3-isocyanatopropyltriethoxysilane, and 3-mercaptopropyltrimethoxysilane are preferable, and trimethoxyphenylsilane, 3-glycidoxy Propyltrimethoxysilane and 3-mercaptopropyltrimethoxysilane are more preferable. A silane coupling agent can be used individually by 1 type or in combination of 2 or more types.

  The amount of the coupling agent used is preferably 0.01 to 50 parts by weight, and 0.05 parts by weight with respect to 100 parts by weight of the inorganic filler, from the viewpoint of balancing the effect of improving heat resistance and storage stability. Part-20 mass parts is more preferable, and 0.5-10 mass parts is still more preferable from a viewpoint of heat resistance improvement.

  The blending amount of the (E) inorganic filler in the temporarily fixing resin composition according to this embodiment is preferably 300 parts by mass or less, more preferably 200 parts by mass or less, with respect to 100 parts by mass of the (A) thermoplastic resin. Even more preferred are parts by weight or less. Although there is no restriction | limiting in particular in content of an inorganic filler, It is preferable that it is 5 mass parts or more with respect to 100 mass parts of thermoplastic resins. By making content of an inorganic filler into the said range, a desired function can be provided, ensuring sufficient adhesiveness of the film-form temporary fixing material formed from the resin composition for temporary fixing.

  An organic filler can be further blended in the temporarily fixing resin composition according to the present embodiment. Examples of the organic filler include carbon, rubber filler, silicone fine particles, polyamide fine particles, and polyimide fine particles. The blending amount of the organic filler is preferably 300 parts by mass or less, more preferably 200 parts by mass or less, and still more preferably 100 parts by mass or less, with respect to 100 parts by mass of the (A) thermoplastic resin. Although there is no restriction | limiting in particular in content of an inorganic filler, It is preferable that it is 5 mass parts or more with respect to 100 mass parts of thermoplastic resins.

  The temporarily fixing resin composition according to the present embodiment may be further diluted with an organic solvent as necessary. The organic solvent is not particularly limited, but can be determined in consideration of the volatility during film formation from the boiling point. Specifically, for example, a relatively low boiling point solvent such as methanol, ethanol, 2-methoxyethanol, 2-ethoxyethanol, 2-butoxyethanol, methyl ethyl ketone, acetone, methyl isobutyl ketone, toluene, xylene is used during film formation. This is preferable in that the curing of the film does not proceed. For the purpose of improving the film forming property, it is preferable to use a solvent having a relatively high boiling point such as dimethylacetamide, dimethylformamide, N-methylpyrrolidone, cyclohexanone. These solvents can be used alone or in combination of two or more.

  The solid content concentration of the temporarily fixing resin composition according to this embodiment is preferably 10 to 80% by mass.

  The temporarily fixing resin composition according to the present embodiment includes (A) a thermoplastic resin, (B) a silicone-modified resin, and (C) a curing accelerator, and (D) components other than the component (B) as necessary. It can be prepared by mixing and kneading the silicone compound, (E) inorganic filler, organic solvent, and other components. Mixing and kneading can be performed by appropriately combining dispersers such as a normal stirrer, a raking machine, a three-roller, and a bead mill.

[Temporary fixing resin film]
The temporarily fixing resin film according to the present embodiment is formed by forming the temporary fixing resin composition according to the present embodiment into a film shape.

  The temporarily fixing resin film according to the present embodiment can be easily manufactured by, for example, applying a temporarily fixing resin composition to a support film. Moreover, when the resin composition for temporary fixing is diluted with the organic solvent, it can manufacture by apply | coating this resin composition to a support film, and removing an organic solvent by heat drying.

  The temporary fixing resin film provided on the support film can be attached with a protective film as necessary. In this case, a temporary fixing resin film sheet having a three-layer structure composed of a support film, a temporary fixing resin film, and a protective film, which will be described later, can be obtained.

  The temporary fixing resin film sheet thus obtained can be easily stored by, for example, winding it into a roll. Moreover, a roll-shaped film can be cut out into a suitable size and stored in a sheet shape.

  FIG. 1A is a top view showing an embodiment of a resin film sheet for temporary fixing according to the present embodiment, and FIG. 1B is a schematic cross-sectional view taken along the line I-I in FIG. It is.

  A temporary fixing resin film sheet 1 shown in FIG. 1 includes a support film 10 having releasability, a temporary fixing resin film 20 provided on the supporting film 10, and a supporting film 10 of the temporary fixing resin film 20. Includes a protective film 30 provided on the opposite side.

  The support film 10 is not particularly limited, and examples thereof include polyethylene terephthalate, polybutylene terephthalate, polyethylene naphthalate, polyethylene, polypropylene, polyamide, and polyimide. Among these, polyethylene terephthalate, polybutylene terephthalate, polyethylene naphthalate, polypropylene, polyamide, and polyimide are preferable from the viewpoints of flexibility and toughness. In addition, from the viewpoint of improving the peelability from the temporarily fixing resin film (resin layer), it is preferable to use as the support film a film that has been subjected to a release treatment with a silicone compound, a fluorine compound, or the like.

  The thickness of the support film 10 may be appropriately changed depending on the intended flexibility, but is preferably 3 to 250 μm. If it is 3 μm or more, the film strength is sufficient, and if it is 250 μm or less, sufficient flexibility is obtained. From such a viewpoint, the thickness of the support film 10 is more preferably 5 to 200 μm, and particularly preferably 7 to 150 μm.

  Although it does not specifically limit about the thickness of the resin film 20 for temporary fixing of this embodiment, It is preferable that it is 5-300 micrometers by the thickness after drying. If it is 5 μm or more, the thickness is sufficient because the thickness is sufficient, and if it is 300 μm or less, the amount of residual solvent in the film can be easily reduced by sufficient drying. It is possible to reduce foaming when the cured product is heated.

  In the case of manufacturing a thick film, a previously formed film having a thickness of 100 μm or less may be bonded. By using the films bonded in this way, the residual solvent when producing a thick film can be reduced.

  Although there is no restriction | limiting in particular as the protective film 30, For example, a polyethylene terephthalate, a polybutylene terephthalate, a polyethylene naphthalate, polyethylene, a polypropylene etc. are mentioned. Among these, polyethylene terephthalate, polyethylene, and polypropylene are preferable from the viewpoints of flexibility and toughness. Moreover, it is preferable to use as a protective film the film by which the mold release process was performed by the silicone type compound, the fluorine type compound, etc. from a viewpoint of peelability improvement with the resin film for temporary fixing (resin layer).

  The thickness of the protective film 30 can be appropriately set depending on the intended flexibility, but is preferably 10 to 250 μm. If it is 10 μm or more, the film strength is sufficient, and if it is 250 μm or less, sufficient flexibility is obtained. From such a viewpoint, the thickness of the protective film 30 is more preferably 15 to 200 μm, and particularly preferably 20 to 150 μm.

  FIG. 2 (A) is a top view showing another embodiment of the resin film sheet for temporary fixing according to the present invention, and FIG. 2 (B) is a schematic cross section taken along line II-II in FIG. 2 (A). FIG.

  The temporarily fixing resin film sheet 2 shown in FIG. 2 is the same as the temporarily fixing resin film sheet 1 except that the temporarily fixing resin film 20 and the protective film 30 are cut in advance according to the shape of the member to be temporarily fixed. It has the same configuration. In FIG. 2, the outer edge portions of the temporarily fixed resin film 20 and the protective film 30 that have been cut are removed, but the temporary fixing resin film and the protective film are notched according to the shape of the temporarily fixed member. And the outer edge may be left.

[Semiconductor wafer processing method]
The semiconductor wafer processing method according to the present embodiment is roughly divided into the following four steps. (A) a temporary fixing step of temporarily fixing the semiconductor wafer and the support through a film-like temporary fixing material, (b) a processing step of processing the semiconductor wafer temporarily fixed to the support, and (c) processing The separation process includes separating the separated semiconductor wafer from the support and the film-like temporary fixing material, and (d) a cleaning process for cleaning the semiconductor wafer when there is a residue.

  3A, 3B, and 3C are schematic cross-sectional views for explaining one embodiment of a method for processing a semiconductor wafer, and FIG. 3D is a semiconductor after processing. It is a top view which shows a wafer.

<(A) Temporary fixing step>
In FIG. 3A, a film-like temporary fixing material 40 formed from the temporary fixing resin composition or the temporary fixing resin film according to this embodiment is interposed between the support 50 and the semiconductor wafer 60. The process of temporarily fixing the semiconductor wafer 60 to the support body 50 is shown.

  The thickness of the semiconductor wafer 60 is not particularly limited, but can be 600 to 800 μm.

  When the temporarily fixing resin composition is used, the film-like temporarily fixing material 40 can be formed on the element forming surface of the semiconductor wafer 60 or on the support by a method such as spin coating. When the temporarily fixing resin composition is diluted with an organic solvent, after spin coating, depending on the volatilization conditions of the solvent, the organic solvent is removed by heating and drying to form a film-like temporarily fixing material 40 To do.

  When the temporary fixing resin film 20 is used, a film-like temporary fixing material is obtained by laminating the temporary fixing resin film 20 on the element forming surface or the support of the semiconductor wafer 60 using a roll laminator, a vacuum laminator, or the like. 40 can be provided.

  Next, the semiconductor wafer 60 on which the film-like temporary fixing material 40 is formed is set on a wafer bonding apparatus or a vacuum laminator, and the support 50 is pressed and pasted with a press. When the film-like temporary fixing material 40 is formed on the support 50 side, the support 50 provided with the film-like temporary fixing material 40 is set on a wafer bonding apparatus or a vacuum laminator, and the semiconductor wafer 60 Press and paste with a press.

  When using a wafer bonding apparatus, for example, using a vacuum press machine EVG520IS (trade name) manufactured by EVG, the pressure is 1 hPa or less, the pressure is 1 MPa, the pressure is 60 ° C. to 200 ° C., the holding time is 100 seconds to 300 seconds, and the semiconductor The wafer 60 and the support body 50 are temporarily fixed via a film-like temporary fixing material 40.

  In the case of using a vacuum laminator, for example, a vacuum laminator LM-50 × 50-S (trade name) manufactured by NPC Corporation, or a vacuum laminator V130 (trade name) manufactured by Nichigo Morton Co., Ltd. is used. Temperature 40 ° C. to 180 ° C., preferably 60 ° C. to 150 ° C., laminating pressure 0.01 to 0.5 MPa, preferably 0.1 to 0.5 MPa, holding time 1 second to 600 seconds, preferably 30 seconds to 300 seconds. Thus, the semiconductor wafer 60 and the support 50 are temporarily fixed via the film-like temporary fixing material 40.

  After the semiconductor wafer 60 and the support 50 are temporarily fixed via the film-like temporary fixing material 40, the film-like temporary fixing material 40 is thermally cured by heating at 100 to 200 ° C. for 5 to 120 minutes. .

  The material of the support in this embodiment is not particularly selected, but a substrate such as a silicon wafer, a glass wafer, or a quartz wafer can be used.

  The support of this embodiment may be subjected to a peeling treatment, and the peeling layer 52 is formed by peeling all or part of the surface of the support 50 as shown in FIG. The release agent used for the release treatment is not particularly limited. For example, a surface modifier having a fluorine element, a polyolefin wax and silicone oil, a silicone oil containing a reactive group, and a silicone-modified alkyd resin have excellent release properties. Therefore, it is preferable.

  When the film-like temporary fixing material having the above-described configuration is used, the semiconductor wafer can be processed at a high temperature using the support, and the temporary fixing resin composition is removed from the semiconductor wafer and the support at room temperature after the processing. It can be peeled without adhesive residue.

<(B) Processing step>
The processing steps include grinding, electrode formation, metal wiring formation, protective film formation and the like used at the wafer level. There is no restriction | limiting in particular in a grinding system, A well-known grinding system can be utilized. The grinding is preferably performed while cooling the semiconductor wafer and a grindstone (such as diamond) with water.

  For example, as shown in FIG. 3B, the back surface of the semiconductor wafer 80, that is, the surface opposite to the side in contact with the film-like temporary fixing material 70 of the semiconductor wafer 80 is ground by a grinder 90, for example, about 700 μm. The thickness is reduced to 100 μm or less.

  As an apparatus for grinding, for example, DGP-8761 (trade name) manufactured by DISCO Corporation can be cited, and the cutting conditions in this case can be arbitrarily selected according to the desired thickness and grinding state of the semiconductor wafer.

  Specifically, other processes include metal sputtering for forming electrodes, etc., wet etching for etching metal sputtering layers, application of resist for masking the formation of metal wiring, pattern formation by exposure / development, resist coating Known processes such as peeling, dry etching, formation of metal plating, silicon etching for TSV formation, and formation of an oxide film on the silicon surface can be mentioned.

  In FIG. 3C, the back surface of the thinned semiconductor wafer 80 is subjected to processing such as dry ion etching or Bosch process, through holes are formed, and then processing such as copper plating is performed to form through electrodes 82. An example is shown.

  In this way, predetermined processing is performed on the semiconductor wafer 80. FIG. 3D is a top view of the semiconductor wafer 80 after processing.

<(C) Separation process>
FIG. 4 is a schematic cross-sectional view for explaining an embodiment of a separation process for separating a processed semiconductor wafer from a support and a film-like temporary fixing material. The separation process according to this embodiment includes a first peeling process for peeling the semiconductor wafer from the support and a second peeling process for peeling the film-like temporary fixing material from the semiconductor wafer. The first peeling step is a step of peeling the semiconductor wafer processed in the processing step from the support, that is, a step of peeling the thinned semiconductor wafer from the support before dicing after various processing. It is. As a peeling method, mainly the semiconductor wafer and the support are heated (preferably 200 to 250 ° C.) while being slid in the opposite direction along the horizontal direction, the semiconductor wafer of the support or A method in which one side of the support is fixed horizontally and the other side is lifted at a certain angle from the horizontal direction, and a protective film is attached to the ground surface of the ground semiconductor wafer, and the semiconductor wafer and the protective film are peeled off. Although the method of peeling from a support body etc. is mentioned by a system, It can employ | adopt without a restriction | limiting in particular.

  Although this embodiment can be applied to all of these peeling methods, one of the support semiconductor wafer 80 and the support 50 as shown in FIG. 4A is fixed horizontally, and the other is fixed. A method of lifting at a certain angle from the horizontal direction, a method of attaching a protective film to the ground surface of the ground semiconductor wafer, and peeling the semiconductor wafer and the protective film by a peel method are more suitable. These peeling methods are usually performed at room temperature, but may be performed at a temperature at which there is no damage to the semiconductor wafer at about 40 to 100 ° C. When mechanically disassembling, for example, an EVG De-Bonding device EVG805EZD is used.

  In the second peeling step, for example, as shown in FIG. 4B, the semiconductor wafer 80 is fixed horizontally, and the end of the film-like temporary fixing material 70 is set at a certain angle from the horizontal direction. By lifting, the semiconductor wafer 80 from which the film-like temporary fixing material is peeled can be obtained (see FIG. 4C). In this embodiment, a film-like temporary fixing material is formed using the temporary fixing resin composition according to this embodiment, so that a processed semiconductor wafer in which residues such as adhesive residue are sufficiently reduced can be easily obtained. Can get to.

  In the present embodiment, separation may be performed between the semiconductor wafer and the film-like temporary fixing material in the first peeling step.

<(D) Cleaning step>
A part of the temporarily fixed material tends to remain on the circuit forming surface of the semiconductor wafer. When a part of the temporarily fixing material remains on the circuit forming surface of the peeled semiconductor wafer, a cleaning step for removing the temporary fixing material can be provided. The temporary fixing material can be removed, for example, by washing the semiconductor wafer.

  The cleaning liquid used is not particularly limited as long as it is a cleaning liquid that can remove a partially remaining temporary fixing material, and examples thereof include the organic solvents that can be used for diluting the temporarily fixing resin composition. These organic solvents can be used individually by 1 type or in combination of 2 or more types.

  In addition, when it is difficult to remove the remaining temporary fixing material, bases and acids may be added to the organic solvent. Examples of bases that can be used include amines such as ethanolamine, diethanolamine, triethanolamine, triethylamine, and ammonia; and ammonium salts such as tetramethylammonium hydroxide. As the acids, organic acids such as acetic acid, oxalic acid, benzenesulfonic acid, and dodecylbenzenesulfonic acid can be used. The addition amount is preferably 0.01 to 10% by mass in terms of the concentration in the cleaning liquid. In order to improve the removability of the residue, an existing surfactant may be added.

  Although there is no restriction | limiting in particular as a washing | cleaning method, For example, the method of washing | cleaning with a paddle using the said washing | cleaning liquid, the washing | cleaning method by spraying, and the method of immersing in a washing | cleaning-liquid tank are mentioned. The temperature is preferably 10 to 80 ° C., and preferably 15 to 65 ° C. Finally, washing with water or alcohol is performed, followed by drying to obtain a thin semiconductor wafer 80.

  Note that, as described above, according to the temporarily fixing resin composition according to the present embodiment, residues such as adhesive residue can be sufficiently reduced, so that the cleaning step can be omitted.

  The processed semiconductor wafer 80 has through electrodes 82 formed in the same manner as described above, and is further separated into semiconductor elements by dicing along a dicing line 84.

  In the present embodiment, a semiconductor device can be manufactured by connecting the obtained semiconductor element to another semiconductor element or a semiconductor element mounting substrate.

  FIG. 5 is a schematic cross-sectional view for explaining an embodiment of a method for manufacturing a semiconductor device. First, the semiconductor element 100 in which the through electrode 86 is formed and separated into pieces by the above-described method is prepared (FIG. 5A). Then, a semiconductor device 120 can be obtained by stacking a plurality of semiconductor elements 100 over the wiring substrate 110 (FIG. 5B).

  EXAMPLES Hereinafter, although an Example and a comparative example demonstrate this invention further more concretely, this invention is not limited to a following example.

[Synthesis of acrylic rubber P-1]
In a 500 cc separable flask equipped with a stirrer, a thermometer, a nitrogen displacement device (nitrogen inflow pipe), and a reflux condenser with a moisture receiver, 200 g of deionized water, 40 g of butyl acrylate, 28 g of ethyl acrylate, 3 g of glycidyl methacrylate, 29 g of acrylonitrile, 2.04 g of a 1.8% polyvinyl alcohol aqueous solution, 0.41 g of lauryl peroxide, and 0.07 g of n-octyl mercaptan were blended. Subsequently, N ₂ gas was blown in for 60 minutes to remove the air in the system, and then the temperature in the system was raised to 65 ° C. to perform polymerization for 3 hours. Furthermore, the temperature was raised to 90 ° C. and stirring was continued for 2 hours to complete the polymerization. The obtained transparent beads were separated by filtration, washed with deionized water, and then dried with a vacuum dryer at 50 ° C. for 6 hours to obtain acrylic rubber P-1. When the acrylic rubber P-1 was measured by GPC, the weight average molecular weight of the acrylic rubber P-1 was 400,000 in terms of polystyrene. Moreover, Tg of acrylic rubber P-1 was 8 degreeC.

  In addition, the measurement of GPC uses GPC (Tosoh Corporation make, SD-8022 / DP-8020 / RI-8020), Tetrahydrofuran as an eluent, Hitachi Chemical Co., Ltd. Gelpack GL-A150-S / Performed using GL-A160-S.

  Moreover, Tg of acrylic rubber was measured on the conditions of temperature rising rate 10 degree-C / min and measurement temperature: -80-80 degreeC using differential scanning calorimetry (DSC) (Rigaku Corporation make, DSC8230). In addition, the glass transition temperature in this case is a midpoint glass transition temperature calculated by a method based on JIS K 7121: 1987 from a change in calorie.

[Synthesis of acrylic rubber P-2]
In a 500 cc separable flask equipped with a stirrer, thermometer, nitrogen displacement device (nitrogen inflow pipe), and reflux condenser with moisture receiver, 200 g of deionized water, 36 g of butyl acrylate, 18 g of ethyl acrylate, Similar to acrylic rubber P-1 except that 3 g of glycidyl methacrylate, 43 g of methyl methacrylate, 2.04 g of 1.8% polyvinyl alcohol aqueous solution, 0.41 g of lauryl peroxide, and 0.07 g of n-octyl mercaptan were blended. Acrylic rubber P-2 was obtained by the method. When the acrylic rubber P-2 was measured by GPC, the weight average molecular weight of the acrylic rubber P-2 was 500,000 in terms of polystyrene. Moreover, Tg of acrylic rubber P-2 was 12 degreeC.

(Examples 1-8, Comparative Examples 1-6)
[Preparation of varnish (resin composition for temporary fixation)]
A varnish was prepared by blending a thermoplastic resin, a silicone-modified resin, a silicone compound, a curing accelerator, a filler and a solvent in the composition of parts by mass shown in Tables 1 and 2.

[Preparation of temporarily fixing resin film]
The prepared varnish was applied onto a release-treated surface of a release-treated polyethylene terephthalate film (A31, thickness 38 μm, manufactured by Teijin DuPont Films Ltd.), and heated and dried at 90 ° C. for 10 minutes and 120 ° C. for 30 minutes. Then, a temporary fixing resin film with a protective film and a support film was obtained. The film thickness of the temporarily fixing resin film was 30 μm. The following tests were conducted using the prepared temporary fixing resin films of Examples 1 to 8 and Comparative Examples 1 to 6, and the evaluation results are summarized in Tables 3 and 4.

[Film lamination on semiconductor wafers]
The temporarily fixing resin film with a support film was cut into a circular shape having a diameter 2 mm smaller than the diameter of the semiconductor wafer. Thereafter, a temporary fixing resin film is laminated on a semiconductor wafer by using a vacuum laminator V130 manufactured by Nichigo Morton Co., Ltd. at a pressure of 1 hPa or less, a pressure bonding temperature of 80 ° C., a laminating pressure of 0.5 MPa, and a holding time of 60 seconds. A semiconductor wafer with a resin film was obtained.

[Crimp to support]
Using a vacuum laminator V130 manufactured by Nichigo Morton Co., Ltd., with a pressure of 1 hPa or less, a pressure bonding temperature of 100 ° C., a laminating pressure of 0.5 MPa, and a holding time of 100 seconds, a support with a release agent and a semiconductor wafer with a resin film for temporary fixing Crimped. Then, after hold | maintaining for 30 minutes in the oven set to 110 degreeC, it hold | maintained for 1 hour in the oven set to 170 degreeC, and the laminated sample was obtained.

[Low temperature stickiness test]
After film lamination to the semiconductor wafer and pressure bonding to the support, the state of the temporarily fixed resin film was confirmed using an ultrasonic microscope (SAM) (Insight-300, manufactured by Insight Co., Ltd.). A sample in which peeling of the temporarily fixing resin film was not observed was evaluated as “◯”, and a sample in which peeling was observed was evaluated as “x”.

[Back grinding test]
In the low-temperature sticking property test, the surface of the semiconductor wafer in the laminated sample was ground using a fully automatic grinder polisher (DGP-8761 manufactured by DISCO Corporation) for the laminated sample evaluated as “◯”. For the wheel, 1 axis: GF01-SDC320-BT300-50, 2 axis: IF-01-1-4 / 6-B · K09, 3 axis: DPEG-GA0001 were used. The chuck table rotation speed was 300 rpm, the wheel rotation speed was 1 axis: 3,200 rpm, 2 axis: 3,400 rpm, 3 axis: 1,400 rpm, and grinding was performed by a cross-feed method. After grinding to 142 μm thickness on one axis, grinding was performed to 100 μm thickness on three axes until 102 μm thickness on two axes. A sample in which cracking or the like did not occur at the end of grinding was evaluated as “◯”, and a sample in which cracking or the like occurred was evaluated as “x”.

[Heat resistance test]
In the back grind test, the state of the temporarily fixed resin film was confirmed using an ultrasonic microscope (SAM, Insight-300, manufactured by Insight Co., Ltd.) for the laminated sample whose evaluation was “◯”. Thereafter, the laminated sample was left in an oven set at 200 ° C. for 2 hours, and further left in an oven set at 260 ° C. for 20 minutes. Subsequently, the state of the temporarily fixing resin film was confirmed again using SAM, and a sample in which peeling of the temporarily fixing resin film did not occur even when left in the oven was “◯”, and a sample in which peeling occurred was “×”. ".

[Peelability test from support]
In the heat resistance test, insert a pair of tweezers with a sharp tip between the support with mold release agent and the temporary fixing resin film for the laminated sample that was evaluated as “◯”, and insert the tweezers along the outer edge. I moved it. At this time, the sample that could peel the support without cracking the semiconductor wafer was evaluated as “◯”, and the sample that could not be peeled was evaluated as “x”.

[Peelability test from semiconductor wafer]
For the laminated sample that was evaluated as “◯” in the peelability test from the support, the end of the temporarily fixing resin film attached to the semiconductor wafer was lifted with tweezers. At this time, the sample that could peel the temporarily fixing resin film from the semiconductor wafer was evaluated as “◯”, and the sample that could not be peeled was evaluated as “x”.

Details of each component in Tables 1 and 2 are as follows.
HTR-860P-3CSP: Acrylic rubber (manufactured by Nagase ChemteX Corporation) having a weight average molecular weight of 800,000 by GPC, 3% by mass of glycidyl methacrylate, and Tg of 12 ° C.
P-1: Acrylic rubber having a weight average molecular weight of 400,000 by GPC, 3% by mass of glycidyl methacrylate, and Tg of 8 ° C. P-2: Acrylic rubber having a weight average molecular weight of 500,000 by GPC, 3% by mass of glycidyl methacrylate, and Tg of 12 ° C. TA31-209E: Silicone-modified alkyd resin (manufactured by Hitachi Chemical)
Tesfine 319: Silicone-modified alkyd resin (manufactured by Hitachi Chemical Co., Ltd.)
KF-105: Epoxy-modified silicone compound at both ends (Shin-Etsu Chemical Co., Ltd.)
2PZ-CN: Imidazole-based curing accelerator (manufactured by Shikoku Kasei Kogyo Co., Ltd.)
SC2050-SEJ: Surface treated silica filler (manufactured by Admatechs Co., Ltd.)

DESCRIPTION OF SYMBOLS 1 ... Temporary fixing resin film sheet, 2 ... Temporary fixing resin film sheet, 10 ... Support film, 20 ... Temporary fixing resin film, 30 ... Protection film, 40 ... Temporary fixing material, 50 ... Support, 52 ... Peeling Layers 60... Semiconductor wafer 70. Temporary fixing material 80. Semiconductor wafer 82. Through electrode 84. Dicing line 86 Dicing electrode 100 Semiconductor element 110 Wiring substrate 120 Semiconductor device

Claims (9)

Temporary fixing step of temporarily fixing a semiconductor wafer to a support via a film-like temporary fixing material, a processing step of processing the semiconductor wafer temporarily fixed to the support, and the support of the processed semiconductor wafer A resin composition for temporary fixing for forming the film-like temporary fixing material used in a method for processing a semiconductor wafer comprising: a separation step for separating the body and the film-like temporary fixing material;
A resin composition for temporary fixing, comprising (A) a thermoplastic resin and (B) a silicone-modified alkyd resin. Further comprising a crosslinking agent for the silicone-modified alkyd resins can be thermally crosslinked, the temporary fixing resin composition of claim 1. The resin composition for temporary fixing according to claim 1 or 2 , wherein the thermoplastic resin is a (meth) acrylic copolymer having a reactive group. (C) The resin composition for temporary fixing as described in any one of Claims 1-3 which further contains a hardening accelerator. (D) The resin composition for temporary fixing as described in any one of Claims 1-4 which further contains silicone compounds other than the said (B) component. (E) The resin composition for temporary fixing as described in any one of Claims 1-5 which further contains an inorganic filler. A temporarily fixing resin film formed by forming the temporarily fixing resin composition according to any one of claims 1 to 6 into a film shape. A temporarily fixing resin film sheet comprising a supporting film having releasability and the temporarily fixing resin film according to claim 7 provided on the supporting film. The separation step is processed by horizontally arranging one of the processed semiconductor wafer or the support and lifting the other of the processed semiconductor wafer or the support at an angle from the horizontal direction. The temporary fixing resin film according to claim 7, wherein the semiconductor wafer is a step of separating the semiconductor wafer from the support and the film-like temporary fixing material.

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