JP6283520B2 - Adhesive composition for semiconductor and semiconductor device - Google Patents

Description

  The present invention relates to a semiconductor adhesive composition and a semiconductor device in which a semiconductor element (chip) is bonded to a resin substrate or a metal lead frame using the same.

In recent years, the use range of electronic devices has been steadily expanding as electronic devices become more sophisticated. The function of an electronic device is manifested by bonding different materials, and various characteristics are required for the functional material involved in the bonding.
Generally, an insulating paste (corresponding to the adhesive composition for semiconductors of the present invention) is composed of a binder component such as an epoxy resin and an insulating powder, and is applied to circuit formation by bonding, coating, and printing of various electronic components. Has been. The binder component, which is mainly a thermosetting resin, is thermally cured by a curing agent and becomes insoluble in an organic solvent, and is given heat resistance, moisture resistance, weather resistance, and the like. As a curing agent for an epoxy resin, which is one of the binder components, various types such as phenol resins, amines, melamines, acid anhydrides, and the like are used.

For example, in Patent Documents 1 to 4, in order to prepare a liquid epoxy resin composition, a glycidylamine type epoxy resin is used together with a phenol resin or acid anhydride as a curing agent.
In Patent Documents 1 to 4, since a considerable amount of phenol resin or acid anhydride is used as a curing agent, there may be an influence of impurities derived from the phenol resin or acid anhydride in the cured product.
Patent Document 5 discloses adhesion for electronic parts including a polyfunctional epoxy compound having a glycidylamine skeleton such as glycidyloxy-N, N-glycidylaniline, an acid anhydride as a curing agent, and a high molecular weight polymer having an epoxy group. Agents have been proposed.

  As described above, since most of the conventional insulating pastes are based on epoxy resin, long-term heat resistance has a limit. In order to improve long-term heat resistance, it has been developed on the basis of polyfunctional epoxy resins having trifunctional, tetrafunctional, etc., but in order to reduce the viscosity and ensure the workability as an adhesive, solvent and single amount The body or oligomer is generally used as a diluent.

Patent Document 6 discloses an epoxy resin composition for an encapsulating sheet for optical semiconductors containing an alicyclic epoxy resin or hydrogenated bisphenol A type epoxy resin and vinyl polymer particles, and vinyl. The use of polymer particles as a pregelling agent is described.
Furthermore, Patent Document 7 discloses a liquid resin composition for semiconductor encapsulation containing a glycidylamine type epoxy resin, an amine curing agent, an inorganic filler, and a low stress agent. An ethyl acrylate copolymer resin, acrylic rubber, and the like are described.

Japanese Patent Laid-Open No. 11-255864 JP 2000-212393 A JP 2001-226455 A JP 2002-179882 A JP 2009-155450 A JP 2013-076092 A JP 2013-163747 A

However, any of the above epoxy resin compositions has problems in cured product characteristics and reliability as a semiconductor device. As a means for solving the problem, it is conceivable to devise a combination of an epoxy resin and a curing agent, or to improve it by adding a solvent, various diluents and additives.
However, when a solvent is used, there is a concern that voids are generated during curing. In addition, when a monomer or oligomer is used as a diluent instead of a solvent, not only does the crosslinking density decrease and the adhesive strength cannot be maintained, but also generated volatile components are present in the periphery of semiconductor elements, substrates, metal lead frames, etc. The member may be contaminated and attached to the bonding wire. At the same time, bleeding of low molecular weight resin or the like occurs at the time of curing, so that the reliability as a semiconductor device is lowered, which is not satisfactory.

  Therefore, the present invention has been made in view of the above circumstances, and the viscosity of the composition is low, the adhesive strength of the cured product is strong, the contamination to the peripheral members is small, and bleed during and after curing. The present invention provides a semiconductor adhesive composition and a semiconductor device using the same, which are capable of suppressing physical contact and having excellent long-term heat resistance and capable of performing highly reliable physical bonding between a semiconductor element and various peripheral members. It is an object.

As a result of intensive studies to achieve the above object, the inventors of the present invention contain glycidylamine type epoxy resin, dicyandiamide, pregelling agent, curing accelerator and inorganic filler as essential components and heated under predetermined conditions. The present inventors have found that a semiconductor adhesive composition in which the amount of volatile components generated at that time is adjusted to a predetermined value or less can achieve the above object, and has completed the present invention.
That is, the present invention
(1) (A) glycidylamine type epoxy resin, (B) dicyandiamide, (C) pregelling agent, (D) curing accelerator, and (E) inorganic filler as essential components, after heating at 150 ° C. for 1 hour An adhesive composition for semiconductors characterized in that the amount of volatile components generated is 0.5% by mass or less,
(2) The adhesive composition for a semiconductor according to the above (1), wherein the viscosity of the glycidylamine type epoxy resin of the component (A) at 25 ° C. according to an E type viscometer is 50 to 1500 mPa · s,
(3) The adhesive composition for a semiconductor according to the above (1) or (2), wherein the pregelling agent of the component (C) is an acrylic resin,
(4) The adhesive composition for a semiconductor according to any one of the above (1) to (3), wherein the curing accelerator of the component (D) is an imidazole.
(5) The adhesive composition for a semiconductor according to any one of (1) to (4) above, wherein the inorganic filler of the component (E) is a fused silica powder, and (6) the semiconductor element described in (1) to ( A semiconductor device is provided which is bonded to a resin substrate or a metal lead frame with the semiconductor adhesive composition according to any one of 5).

  The adhesive composition for a semiconductor of the present invention generates a small amount of volatile components during wire bonding at high temperature or by heating during curing, and can suppress the generation of bleeding such as a low molecular weight resin. Therefore, it is possible to prevent volatile components and low molecular weight resins from adhering to the bonding wires, and to suppress contamination of peripheral members such as semiconductor elements, substrates, and metal lead frames. In addition, by using the semiconductor adhesive composition of the present invention, the adhesive strength during heating is high, and the semiconductor element is highly reliable in joining various peripheral members such as a resin substrate or a metal lead frame. A semiconductor device can be obtained.

It is a schematic diagram which shows an example of the semiconductor device of this invention.

Hereinafter, the present invention will be described in detail.
The semiconductor adhesive composition of the present invention comprises (A) a glycidylamine type epoxy resin, (B) dicyandiamide, (C) a pregelling agent, (D) a curing accelerator, and (E) an inorganic filler as essential components. Is.
The component (A) glycidylamine type epoxy resin used in the present invention is an epoxy resin having one or more diglycidylamino groups in the molecule, and is not particularly limited, but p-glycidylaminocresol type epoxy resin or Examples thereof include p-glycidylaminophenol type epoxy resins and glycidyl aniline type epoxy resins, and preferred examples include glycidyl aniline type epoxy resins.
Commercially available products of glycidylamine type epoxy resins include, for example, product names jER604 [4,4'-methylenebis (N, N-diglycidylaniline), jER630 [N, N-diglycidyl-4- (glycidyloxy) manufactured by Mitsubishi Chemical Corporation. ) Aniline, epoxy equivalent 98 g / eq], product number EP-3900 manufactured by Adeka [N, N-bis (2,3-epoxypropyl) -4- (2,3-epoxypropoxy) -2-methylaniline, epoxy Equivalent 100 g / eq] and EP-3950 [N, N-bis (2,3-epoxypropyl) -4- (2,3-epoxypropoxy) aniline, epoxy equivalent 95 g / eq].
The viscosity of the glycidylamine-type epoxy resin (A) at 25 ° C. measured by an E-type viscometer is 50 to 1500 mPa from the viewpoint that an appropriate workability can be ensured when a semiconductor device is produced using a semiconductor adhesive composition. * It is preferable that it is s, and it is more preferable that it is 300-1000 mPa * s.
The compounding quantity of the glycidyl amine type epoxy resin which is a component (A) is 20-80 mass% in a component (A)-(E), Preferably it is 30-70 mass%.

In addition, this glycidylamine type epoxy resin may be used in combination with other epoxy resins that have been used in conventional insulating pastes (corresponding to the adhesive composition for semiconductors of the present invention) as long as the effects of the present invention are not impaired. it can. Specific examples of this epoxy resin include bisphenol A type epoxy resin, bisphenol F type epoxy resin, biphenyl type epoxy resin, naphthalene type epoxy resin, dicyclopentadiene type epoxy resin, cresol novolac type epoxy resin, hydrogenated bisphenol type epoxy resin, 1,4-cyclohexanedimethanol diglycidyl ether, 1,6-hexanediol diglycidyl ether, hexahydrophthalic acid diglycidyl ester, 3,4-epoxycyclohexylmethyl (3,4-epoxy) cyclohexanecarboxylate, tri Examples thereof include glycidyl isocyanurate, n-butyl glycidyl ether, and 4- (t-butyl) phenyl glycidyl ether.
The compounding quantity of the other epoxy resin which can be used together is 0-20 mass parts with respect to 100 mass parts of glycidyl amine type epoxy resins of a component (A), Preferably it is 0-10 mass parts.

There is no restriction | limiting in particular in the dicyandiamide which is the component (B) in this invention, If it is generally used for various uses as a hardening | curing agent of an epoxy resin, it can be used. In order to disperse uniformly, it is preferably 100 μm or less, more preferably 20 μm or less, and even more preferably 5 μm or less. As a commercial item, DICY7 (Mitsubishi Chemical make, brand name average particle diameter 3 micrometers) is mentioned, for example. As dicyandiamide, DICY (manufactured by Nippon Carbide, trade name, average particle size: 100 to 200 μm) is also commercially available, but it is not preferable because the average particle size is large.
The content of component (B) dicyandiamide is 100 parts by mass of the total epoxy resin (total amount of glycidylamine type epoxy resin and other epoxy resins) from the viewpoint of maintaining the adhesive strength during heating. The amount is preferably 3 to 20 parts by mass, more preferably 5 to 10 parts by mass.

The pregelling agent of component (C) in the present invention is added to the peripheral member (for example, a resin substrate or a metal lead frame) due to the viscosity of the glycidylamine type epoxy resin of component (A) being reduced by heating. It is intended to suppress excessive spread of the material by gelation in a short time and increase the adhesive strength of the cured product. Further, by uniformizing the cured adhesive layer, a semiconductor device having high reliability by suppressing variations in insulation (volume resistivity) and the like can be realized.
The pregelling agent is preferably a powder that is easily dispersed during preparation of the adhesive composition. The average particle size of the powder is preferably about 0.2 to 50 μm, more preferably about 0.5 to 50 μm, and still more preferably about 1 to 10 μm from the viewpoint of dispersibility. Examples of those that are easily dispersed in the glycidylamine type epoxy resin include thermoplastic resins such as acrylic resin, vinyl chloride resin, and polyamide resin.
Furthermore, the number average molecular weight is preferably 10,000 to 5,000,000, more preferably 200,000 to 3,000,000, and a partially crosslinked product may be used from the viewpoint of high gelling effect.
The pregelling agent is generally inactive at less than 40 ° C. and is activated by being heated to about 50 to 130 ° C., thereby rapidly increasing the viscosity of the glycidylamine-type epoxy resin to a gel state.

  The addition amount of the component (C) is 1 to 20 parts by mass, preferably 1 to 10 parts by mass with respect to the total (100 parts by mass) of the components (A) to (D) from the viewpoint of storage stability. . In addition, as the component (C), a plurality of components having different activation temperatures may be used in combination. Commercially available products include F-301 (epoxy group-containing polymethyl methacrylate, average particle size 2 μm), F-303 (polymethyl methacrylate, average particle size 1 μm), F-320 (polymethyl methacrylate, average particle size 1 μm), F351. (Core-shell acrylate copolymer, average particle size 0.3 μm) [manufactured by Nippon Zeon Co., Ltd.], methabrene JF-003 (methacrylic resin, average particle size 3 μm) [manufactured by Mitsubishi Rayon Co., Ltd.].

In the present invention, in addition to the above, a curing accelerator is used as component (D). Examples of curing accelerators that can be used include imidazoles such as 2-methylimidazole, 2-phenyl-4-methylimidazole, 2-methylimidazole borate salt, 1,8-diazabicyclo (5,4,0) undecene- 7. Tertiary amine curing accelerators such as triethanolamine and benzyldimethylamine, and organic phosphine curing accelerators such as triphenylphosphine and tetraphenylphosphine borate salts.
It is also possible to add a thermal cation curing accelerator and heat cure. Examples of usable compounds include benzylsulfonium salt, thiophenium salt, thiolanium salt, benzylammonium, pyridinium salt, hydrazinium salt. , Carboxylic acid ester, sulfonic acid ester, amine imide and the like.
The content of the curing accelerator of component (D) is the total epoxy resin (total amount of glycidylamine type epoxy resin and other epoxy resins) in the adhesive composition for semiconductors from the viewpoint of maintaining the adhesive strength of the cured product. Preferably it is 0.5-5 mass parts with respect to 100 mass parts, More preferably, it is 0.1-1 mass part.

As the inorganic filler which is the component (E) in the present invention, oxides such as silica, alumina, zirconia and titania, nitrides such as silicon nitride and aluminum nitride, barium sulfate and calcium carbonate can be used. These may be used alone or in combination of two or more. From the viewpoints of improving fluidity, high filling properties, improving wear resistance, and reducing impurities, it is preferable to use silica, especially fused silica powder. Examples of commercially available fused silica powder include SFP-30M, FB-5D, and the like [trade name, manufactured by Denki Kagaku Kogyo Co., Ltd.].
The compounding quantity of an inorganic filler is 10-70 mass% in a composition whole quantity, Preferably it is 20-60 mass%. By setting it to 10% by mass or more, the mechanical strength of the cured product can be maintained. It can be prevented from decreasing.

  In the adhesive composition for semiconductors of the present invention, in addition to each of the above essential components, an antifoaming agent, a colorant, and a difficulty that are generally blended in this kind of adhesive composition within a range not impairing the effects of the present invention. A flame retardant and other various additives can be mix | blended as needed. These may be used individually by 1 type, and may mix and use 2 or more types. Diluents such as silane coupling agents and solvents may be added in small amounts as long as the amount of volatile components generated after heating at 150 ° C. for 1 hour can be maintained at 0.5% by mass or less.

The adhesive composition for a semiconductor of the present invention comprises the above-mentioned essential components of (A) glycidylamine type epoxy resin, (B) dicyandiamide, (C) pregelling agent, (D) curing accelerator, and (E) inorganic filler. The various additives to be blended as necessary are mixed well according to a conventional method, and further kneaded with a disperser, kneader, three-roll mill, etc., and then defoamed for easy production. be able to.
The compounding quantity of various additives is 5 mass parts or less with respect to 100 mass parts of adhesive compositions for semiconductors, Preferably it is 3 mass parts or less.
By setting it as 5 mass parts or less, the generation amount of the volatile component after heating at 150 ° C. for 1 hour can be 0.5 mass% or less, preferably 0.3 mass% or less.
Volatile components are mainly low molecular weight components contained in the components and decomposition products during heating.
It is desirable that the amount of diluent such as a solvent is as small as possible.
The viscosity of the adhesive composition for semiconductors of the present invention is 30 Pa · s or less, preferably 20 Pa · s or less, from the viewpoint of workability when producing a semiconductor device, and is thixotropic (<Adhesive in Examples described later) Is described above in the description of the properties of the composition> is 1 or more, preferably 1 or more and 3.0 or less.
The adhesive composition for semiconductors of the present invention has good workability and is excellent in adhesiveness and long-term heat resistance. In addition, when the semi-conducting element and various peripheral members are joined, highly reliable physical and electrical joining can be performed regardless of the type of the peripheral member.

Next, the semiconductor device of the present invention will be described.
In the semiconductor device of the present invention, for example, a semiconductor element is mounted on a resin substrate or a metal lead frame via the semiconductor adhesive composition of the present invention, and the adhesive composition is heated and cured, and then the resin substrate or It can be manufactured by connecting the lead portion of the metal lead frame and the electrode on the semiconductor element by wire bonding, and then sealing the whole using a sealing resin. Examples of the bonding wire include a wire made of copper, gold, aluminum, gold alloy, aluminum-silicon, or the like. Moreover, the temperature at the time of hardening an adhesive composition is 150-250 degreeC normally, and it is preferable to heat about 1-3 hours.
At this time, when the generation amount of volatile components after heating at 150 ° C. for 1 hour of the adhesive composition exceeds 0.5 mass%, the volatile components adhere to the semiconductor element and the resin substrate or the metal lead frame portion, There may be a case where a physical or electrical connection failure occurs between the bonding wire and the semiconductor element or between the bonding wire and the resin substrate or the metal lead frame. In addition, when bleeding such as a low molecular weight resin occurs at the time of curing, the adhesiveness between the semiconductor element and the sealing resin and between the semiconductor element and the cured adhesive composition is affected, and the reliability is lowered. FIG. 1 shows an example of a semiconductor device of the present invention, and an adhesive composition that is a cured product of the semiconductor adhesive composition of the present invention between a lead frame 1 such as a copper frame and a semiconductor element 2. The physical layer 3 is interposed.
Further, the electrode 4 on the semiconductor element 2 and the lead portion 5 of the resin substrate or metal lead frame 1 are connected by a bonding wire 6, and these are all sealed with a sealing resin 7. In addition, as thickness of the adhesive composition layer 3, about 10-30 micrometers is preferable.
As the sealing resin, an epoxy resin, a silicone resin, a phenol resin, an imide resin, or the like is used.
In addition, as for the semiconductor element (chip), various sizes having a side length of about 0.2 to 2.0 mm are used.

Since the adhesive composition for semiconductors of the present invention has low viscosity and thixotropy, it has good workability when producing a semiconductor device, and gives a cured product excellent in heat resistance, moisture resistance, and weather resistance. Furthermore, even in a small semiconductor element, the semiconductor element is bonded and fixed on a semiconductor element support member such as a resin substrate or a metal lead frame by an adhesive having a large adhesive strength, so that it has high reliability. ing.
Thus, the semiconductor adhesive composition of the present invention is useful as an adhesive for bonding (bonding) a semiconductor element and a semiconductor element support member.

  EXAMPLES Next, although an Example demonstrates this invention further in detail, this invention is not limited to these Examples at all. In the following description, “parts” means “parts by mass” unless otherwise specified.

Example 1
Component (A) glycidylamine type epoxy resin [jER630, N, N-diglycidyl-4- (glycidyloxy) aniline manufactured by Mitsubishi Chemical Corporation, epoxy equivalent 98 g / eq, viscosity at 25 ° C. by E type viscometer 600 mPa S)] 50.02 parts and component (B) dicyandiamide [DICY7, manufactured by Mitsubishi Chemical Corporation, average particle size 3 μm] 5.25 parts, component (C) pregelator [epoxy group-containing poly Methyl methacrylate, F-301, manufactured by Nippon Zeon Co., Ltd., average particle size 2 μm] 2.5 parts, 0.5 part imidazole [2P4MHZ, manufactured by Shikoku Kasei Co., Ltd.] 0.5 parts as a component (D) curing accelerator The mixture was kneaded and dispersed to obtain a viscous resin composition. This viscous resin composition was mixed with 39 parts of fused silica powder [SFP-30M, manufactured by Denki Kagaku Kogyo Co., Ltd.] having an average particle size of 0.7 μm as an inorganic filler of component (E), and then silane coupling. 0.5 parts of 3-glycidoxypropyltrimethoxysilane [KBM-403, manufactured by Shin-Etsu Silicone Co., Ltd.] was added as an agent, kneaded with disperse, degassed under reduced pressure, and semiconductor adhesive composition Manufactured.
Next, the obtained semiconductor adhesive composition was applied onto a silver-plated copper lead frame to bond a semiconductor element (2 mm × 2 mm silicon chip), and heated at 150 ° C. for 1 hour to form a semiconductor adhesive composition. A cured product is produced by curing the product, and is physically and electrically bonded with a bonding wire and a lead frame, and the whole is sealed with a sealing resin (epoxy resin) to manufacture a semiconductor device (see FIG. 1). ).

Examples 2, 3 and Comparative Examples 1-5
According to the blending components shown in Table 1, a semiconductor adhesive composition and a comparative composition were produced in the same manner as in Example 1, and a semiconductor device was produced in the same manner as in Example 1.
Viscosity, thixotropy and storage stability of the adhesive compositions for semiconductors and comparative compositions obtained in Examples 1 to 3 and Comparative Examples 1 to 5 were measured. In addition, the amount of volatile components generated, adhesive strength [shear strength between a silver-plated copper lead frame and a 2 mm × 2 mm silicon chip (semiconductor element)], volume resistivity, and elastic modulus are measured for the cured product. It was. Furthermore, the bleed-out state at the time of silicon chip curing bonding was observed, and reliability evaluation after heat shock was also performed as a characteristic of the semiconductor device. The results are shown in Table 1. In Table 1, as for the compounding quantity of each component, the upper stage is a mass part, and the numerical value in a lower stage parenthesis is the mass%.

Of the materials used in Examples 2 and 3 and Comparative Examples 1 to 5, materials not used in Example 1 are as shown below.
Essential components and comparative components for comparison [component (A)]: bisphenol A type epoxy resin [jER827, epoxy equivalent 185 g / eq] manufactured by Mitsubishi Chemical Corporation
[Component (B-1)] for comparison: Phenolic resin [TD-2131] manufactured by DIC Corporation,
For comparison [component (B-2)]: Adeka's modified aliphatic polyamine [EH-4357S]
Component (C): Pregelling agent, polymethyl methacrylate (F-303, average particle size 1 μm) manufactured by Nippon Zeon Co., Ltd.
Component (E): inorganic filler, fused silica manufactured by Denki Kagaku Kogyo Co., Ltd. [FB-5D]
Optional component Diluent: Phenyl glycidyl ether [PGE] manufactured by Sakamoto Pharmaceutical Co., Ltd.

<Characteristics of adhesive composition>
(1) Viscosity Using an E-type viscometer (3 ° cone) manufactured by Toki Sangyo Co., Ltd., the viscosity (unit: Pa · s) at a temperature of 25 ° C. and 2.5 rpm was measured.
(2) Thixoness Using an E-type viscometer (3 ° cone) manufactured by Toki Sangyo Co., Ltd., the viscosity (unit: Pa · s) at a temperature of 25 ° C. and 2.5 rpm was measured (2.5 rpm). The viscosity at 10 rpm / (viscosity at 10 rpm) was calculated to be thixotropy.

<Hardened product characteristics>
All curing conditions are a temperature of 150 ° C. and a time of 60 minutes.
(1) Generated amount of volatile components The mass of 1.5 g of the adhesive composition spread on a heat-resistant container was measured, left in an oven heated to 150 ° C. for 1 hour, and then weighed again to measure the mass. The rate of change was calculated and the amount of volatile components generated (unit: mass%).
(2) Elastic modulus, glass transition temperature 50 mm x 5 mm, a cured sample with a thickness of about 20 μm was prepared, and the elastic modulus (unit: GPa) and glass transition temperature (unit: ° C) at normal temperature (25 ° C) were measured with DMS It was measured by (viscoelastic spectrometer).
(3) Adhesive strength A semiconductor element (2 mm × 2 mm silicon chip) and a silver-plated copper lead frame were bonded using an adhesive composition so that the thickness of the adhesive layer was 10 μm and cured. The adhesion strength between the semiconductor element and the copper lead frame was measured at room temperature (25 ° C.) using a shear strength (according to die shear strength measurement) measuring instrument (manufactured by DAGE, Bond Tester 4000) (unit: N).
(4) Volume resistivity A 1 mm thick spacer was sandwiched between two glass plates to which Teflon (registered trademark) tape was attached, and the adhesive composition was poured into a cured product. The measurement was performed according to JIS 6911 using a high resistance meter (unit: Ω · cm).
(5) Bleed-out After the adhesive composition was allowed to stand at 150 ° C. for 90 minutes to be cured, the presence or absence of bleeding of the epoxy resin from the surface portion of the cured product was visually confirmed.
(6) Storage stability After leaving the adhesive composition sealed at 25 ° C., the viscosity change at 2.5 ° C. using 25 ° C., 3 ° corn was measured, and the change rate exceeded 10%. It was life.
(7) Reliability of the semiconductor device An adhesive composition was applied so that the thickness of the adhesive layer formed on the same silver-plated copper lead frame as that used for the adhesive strength measurement was 10 μm. A 2 mm × 2 mm silicon chip was mounted as a semiconductor element. Next, after curing, a bonding wire and a copper lead frame part are physically and electrically joined to produce a semiconductor device in which the whole is sealed with a sealing resin (epoxy resin), and TCT1000 cycle (−65 ° C. / After applying a heat shock of 30 seconds and 125 ° C./30 seconds), the number of peelings between the cured product of the substrate / adhesive composition and between the substrate / encapsulating resin in the semiconductor device was counted. The numerical values in Table 1 indicate the number of peelings out of 10 pieces.

  As is apparent from Table 1, the adhesive compositions for semiconductors of the examples have excellent workability because of low viscosity and thixotropy, and the amount of volatile components generated after heating at 150 ° C. for 1 hour is small. It has been shown that the semiconductor device obtained by using this adhesive composition for a semiconductor is excellent in reliability because of its good adhesive strength and high insulation.

  The adhesive composition for semiconductors of the present invention can be used as an insulating paste that has been used conventionally.

1: substrate or metal lead frame 2: semiconductor element 3: adhesive composition layer 4: electrode 5: lead portion 6: bonding wire 7: sealing resin

Claims (7)

(A) Glycidylamine type epoxy resin, (B) Dicyandiamide, (C) Pregelling agent, (D) Curing accelerator, and (E) Inorganic filler as essential components, (A) Blending of glycidylamine type epoxy resin Adhesion for semiconductor, characterized in that the amount is 20 to 80% by mass in components (A) to (E), and the amount of volatile components generated after heating at 150 ° C. for 1 hour is 0.5% by mass or less. Agent composition.   2. The adhesive composition for a semiconductor according to claim 1, wherein the viscosity of the component (A) glycidylamine type epoxy resin at 25 ° C. measured by an E type viscometer is 50 to 1500 mPa · s. The amount of addition of the pregelling agent of the said component (C) is 1-10 mass parts with respect to the sum total (100 mass parts) of the said components (A)-(D). For semiconductors of Claim 1 or 2 Adhesive composition. The adhesive composition for a semiconductor according to any one of claims 1 to 3, wherein the pregelling agent of the component (C) is polymethyl methacrylate . The adhesive composition for semiconductors according to any one of claims 1 to 4 , wherein the curing accelerator of the component (D) is an imidazole. The semiconductor adhesive composition according to any one of claims 1 to 5 , wherein the inorganic filler of the component (E) is fused silica powder. The semiconductor device formed by bonding a resin substrate or a metal lead frame with a semiconductor adhesive composition according to the semiconductor device to any one of claims 1-6.