JP6283468B2 - Reverse conducting IGBT - Google Patents

Description

  The present invention relates to a reverse conducting IGBT (Reverse Conducting Insulated Gate Bipolar Transistor).

  A reverse conducting IGBT in which a diode structure is integrated in a semiconductor layer in which an IGBT structure is formed has been developed. As shown in FIG. 8, this kind of reverse conducting IGBT is often used for six transistors Tr1-6 constituting a three-phase inverter, and the diode structure operates as a free wheeling diode (FWD). To do.

  FIG. 9 shows a timing chart of gate signals input to the transistors Tr1-6. The phases of the gate signals of the upper and lower transistors are shifted by about 180 degrees, the phases of the gate signals of the U-phase and V-phase transistors are shifted by about 120 degrees, and the phases of the gate signals of the V-phase and W-phase transistors are approximately It is shifted by 120 degrees.

  For example, at time t1, a current flows through the IGBT structure of the transistors Tr1, Tr3, Tr6. At time t3, current flows through the IGBT structure of the transistors Tr2, Tr3, Tr6. Here, at time t2, which is a transition period from time t1 to time t3, a reflux current flows through the diode structure of the transistor Tr2, and the gate signal of the transistor Tr2 is on. Thus, in the three-phase inverter, there is a mode in which the gate voltage is applied to the corresponding gate when the return current flows through the diode structure.

  When a gate voltage is applied to the gate, the n-type drift region and the n-type emitter region are connected via the channel. Both the n-type emitter region and the p-type body region are connected to a common emitter electrode. For this reason, when a gate voltage is applied to the gate, it is difficult to apply a sufficient voltage in the forward direction of the diode structure composed of the p-type body region and the n-type drift region. As shown in FIG. 10, this phenomenon is called gate interference, and the forward voltage of the diode structure varies greatly depending on on / off of the gate signal.

  Patent Document 1 proposes a technique for providing an external circuit configured to detect a return current flowing in a diode structure and block a gate signal in order to prevent such gate interference. Yes.

JP 2008-72848 A

  As in Patent Document 1, in the technique of providing an external circuit, the control becomes complicated and the cost increases. The present specification aims to provide a technique for improving gate interference by devising the internal structure of a reverse conducting IGBT.

  One embodiment of the reverse conducting IGBT disclosed in the present specification includes a semiconductor layer and a trench gate provided in a surface layer portion of the semiconductor layer. The semiconductor layer is provided on the first conductivity type drift region and the drift region in contact with the bottom surface of the trench gate and on the second conductivity type body region and body region in contact with the side surface of the trench gate. A plurality of first conductivity type emitter regions. The plurality of emitter regions are in contact with the side surface of the trench gate and are distributed along the longitudinal direction of the trench gate. The body region includes a contact region located between the emitter regions and a protruding region located below a portion where the contact region is in contact with the trench gate. The depth of the protruding region with respect to the trench gate is deeper than the depth of the body region located below the portion where the emitter region is in contact with the trench gate.

  In the reverse conducting IGBT of the above embodiment, since the protruding region is provided, the portion where the drift region and the trench gate are in contact with each other is reduced, so that the parasitic resistance operation at the time of gate interference is difficult to occur. Therefore, a forward voltage is sufficiently applied to the diode structure composed of the body region and the drift region, the diode structure operates well, and gate interference is suppressed.

FIG. 1 is a cross-sectional view of a main part of the reverse conducting IGBT of the embodiment, and is a vertical cross-sectional view corresponding to the line II in FIG. 2 is a cross-sectional view of a main part of the reverse conducting IGBT of the embodiment, and is a vertical cross-sectional view corresponding to the line II-II in FIG. FIG. 3 is a cross-sectional view of the main part of the reverse conducting IGBT of the embodiment, and is a vertical cross-sectional view corresponding to the line III-III in FIG. FIG. 4 is a plan view of the main part of the semiconductor layer of the reverse conducting IGBT of the embodiment. FIG. 5 is a perspective view of an essential part of a unit structure of a reverse conducting IGBT for simulation. FIG. 6 is a simulation result showing the unit width dependence of the protruding region in the relationship between the anode-cathode voltage and the anode current. FIG. 7 is a simulation result showing the impurity concentration dependence of the protruding region in the relationship between the anode-cathode voltage and the anode current. FIG. 8 shows a circuit configuration of the inverter circuit. FIG. 9 shows a timing chart of gate signals for the transistors constituting the inverter circuit. FIG. 10 is a diagram for explaining the influence of gate interference in the forward voltage and the forward current of the diode structure included in the reverse conducting IGBT.

The technical features disclosed in this specification will be summarized below. The items described below have technical usefulness independently.
(Feature 1) The technique disclosed in this specification is embodied in a reverse conducting IGBT in which a diode structure is integrated in a semiconductor layer in which an IGBT structure is formed.
(Feature 2) The reverse conducting IGBT disclosed in the present specification may include a trench gate provided in a surface layer portion of a semiconductor layer. The trench gate may extend in the longitudinal direction when the semiconductor layer is viewed in plan. The layout of the trench gate is not particularly limited. In one example, a striped layout may be adopted as the trench gate layout.
(Feature 3) The semiconductor layer includes a first conductivity type drift region in contact with the bottom surface of the trench gate, a second conductivity type body region provided on the drift region and in contact with the side surface of the trench gate, and You may have several emitter area | regions of the 1st conductivity type provided on the body area | region. The plurality of emitter regions may be in contact with the side surface of the trench gate and may be distributed along the longitudinal direction of the trench gate. The semiconductor layer further includes a second conductivity type collector region provided in a part under the drift region, and a first conductivity type cathode region provided in another part under the drift region. Also good. The layout of the collector region and the cathode region provided under the drift region is not particularly limited. For example, a layout in which collector regions and cathode regions are alternately arranged when a semiconductor layer is observed in a specific cross section may be used.
(Feature 4) In the reverse conducting IGBT disclosed in the present specification, the body region may include a contact region located between the emitter regions and a protruding region located below a portion where the contact region is in contact with the trench gate. Good. The depth of the protruding region with respect to the trench gate is deeper than the depth of the body region located below the portion where the emitter region is in contact with the trench gate. The impurity concentration in the protruding region is not particularly limited. Since the protruding region is provided, the portion where the drift region and the trench gate are in contact with each other is reduced, so that the parasitic resistance operation at the time of gate interference is difficult to occur. For this reason, even if a gate voltage is applied to the trench gate, a sufficient forward voltage is applied to the built-in diode structure, so that gate interference is suppressed.
(Feature 5) The protruding region of the body region may be configured to cover the trench gate. According to this form, a channel is not formed in the portion where the protruding region is provided. For this reason, even if a gate voltage is applied to the trench gate, a sufficient forward voltage is applied to the built-in diode structure, so that gate interference is well suppressed.
(Feature 6) The protruding regions of the body region may be provided in a distributed manner along the longitudinal direction of the trench gate. According to this embodiment, gate interference can be suppressed in many portions of the trench gate.
(Feature 7) When the semiconductor layer is viewed in plan, the range in which the collector region exists is the IGBT range, and the range in which the cathode region exists is the diode range, the protruding region of the body region is provided at least in the diode range It may be done. More preferably, the protruding region of the body region may be provided also in the IGBT range.

  As shown in FIG. 1, the reverse conducting IGBT 1 includes a semiconductor layer 10 partitioned into an IGBT range and a diode range, a collector electrode 22 covering the back surface of the semiconductor layer 10, an emitter electrode 24 covering the surface of the semiconductor layer 10, And a plurality of trench gates 30 formed in the surface layer portion of the semiconductor layer 10. In one example, the collector electrode 22 is made of aluminum, and the emitter electrode 24 is made of aluminum. The trench gate 30 includes a trench gate electrode 32 made of polysilicon and a gate insulating film 34 made of silicon oxide covering the trench gate electrode 32. As shown in FIG. 4, the trench gates 30 extend in the vertical direction on the paper surface as the longitudinal direction, and are arranged in stripes.

  As shown in FIG. 1, the semiconductor layer 10 is a silicon substrate, and includes a p-type collector region 11, an n-type cathode region 12, an n-type drift region 13, a p-type body region 14, and an n-type body. A plurality of emitter regions 15 are included.

  The collector region 11 is provided in a part below the drift region 13 and is disposed in the IGBT range. The collector region 11 has a high impurity concentration and is in ohmic contact with the collector electrode 22. The collector region 11 is formed, for example, by introducing boron into a part of the back layer portion of the semiconductor layer 10 using an ion implantation technique.

  The cathode region 12 is provided in a part below the drift region 13 and is disposed in the diode range. The cathode region 12 has a high impurity concentration and is in ohmic contact with the collector electrode 22. The cathode region 12 is formed, for example, by introducing phosphorus into a part of the back layer portion of the semiconductor layer 10 using an ion implantation technique. In this example, one collector region 11 is arranged corresponding to the plurality of trench gates 30 and one cathode corresponding to the plurality of trench gates 30 so that the IGBT range and the diode range are clearly divided. Area 12 is arranged. This layout is an example, and various layouts can be adopted instead of this example. For example, a layout in which a plurality of cathode regions 12 are distributed with respect to the collector region 11 may be used.

  The drift region 13 is provided between the collector region 11 and the body region 14, and between the cathode region 12 and the body region 14, and is disposed in both the IGBT range and the diode range. The drift region 13 is in contact with the bottom surface of the trench gate 30. In other words, the trench gate 30 penetrates the body region 14 and is in contact with the drift region 13. The drift region 13 is a remaining part in which another region is formed in the semiconductor layer 10, and the impurity concentration is constant in the thickness direction.

  The body region 14 is provided on the drift region 13 and is disposed in both the IGBT range and the diode range. The body region 14 is in contact with the side surface of the trench gate 30. The body region 14 includes a main body region 14a having a relatively low impurity concentration and a contact region 14b having a relatively high impurity concentration. The main body region 14a is provided surrounding the contact region 14b. The contact region 14 b is provided exposed on the surface of the semiconductor layer 10 and is in ohmic contact with the emitter electrode 24. The body region 14 is formed, for example, by introducing boron into the surface layer portion of the semiconductor layer 10 using an ion implantation technique. Further, an n-type carrier storage layer having a floating potential may be provided in the main body region 14a.

  The plurality of emitter regions 15 are provided on the body region 14 and are arranged in both the IGBT range and the diode range. The plurality of emitter regions 15 are provided dispersed in the surface layer portion of the semiconductor layer 10 and exposed on the surface of the semiconductor layer 10. The plurality of emitter regions 15 have a high impurity concentration and are in ohmic contact with the emitter electrode 24. The plurality of emitter regions 15 are formed, for example, by introducing phosphorus into the surface layer portion of the semiconductor layer 10 using an ion implantation technique.

  As shown in FIG. 4, the plurality of emitter regions 15 are in contact with the side surfaces of the trench gates 30 and are distributed along the longitudinal direction of the trench gates 30 (the vertical direction in the drawing). The contact region 14 b of the body region 14 is in contact with the side surface of the trench gate 30 between the emitter regions 15. In other words, the trench gate 30 is repeatedly provided with a portion in contact with the emitter region 15 and a portion in contact with the contact region 14b alternately along the longitudinal direction. Further, when observed in a direction perpendicular to the longitudinal direction of the trench gate 30 (left and right direction on the paper surface), the portions in contact with the emitter regions 15 of the plurality of trench gates 30 are arranged to coincide with each other. The portions of the plurality of trench gates 30 that are in contact with the contact regions 14b are arranged to coincide with each other. That is, in the semiconductor layer 10, emitter formation ranges A <b> 15 and contact formation ranges A <b> 14 are alternately arranged along the longitudinal direction of the trench gate 30.

  As shown in FIGS. 2 and 3, the body region 14 further includes a protruding region 16 that is formed deeper than the trench gate 30 and covers the bottom surface of the trench gate 30. The protruding region 16 is selectively provided in the contact formation range A14 (see FIG. 4) and is not provided in the emitter formation range A15 (see FIG. 4). Therefore, when the body region 14 is observed along the longitudinal direction of the trench gate 30, portions shallower than the trench gate 30 and portions deeper than the trench gate 30 are alternately provided. In this example, the protruding region 16 is illustrated as a part of the main body region 14a. However, it is desirable that the impurity concentration of the protruding region 16 is higher than the impurity concentration of the main body region 14a. The protruding region 16 is formed, for example, by introducing phosphorus into the bottom of the trench for forming the trench gate 30 using an ion implantation technique.

  In the reverse conducting IGBT 1, the collector region 11, the drift region 13, the body region 14, the emitter region 15, and the trench gate 30 constitute an IGBT structure. In the reverse conducting IGBT 1, the cathode region 12, the drift region 13, and the body region 14 form a diode structure. In the reverse conducting IGBT 1, the diode structure operates as a free wheel diode.

  As described in the background art, when the reverse conducting IGBT 1 is used in a three-phase inverter, there is a mode in which a gate voltage is applied to the trench gate 30 when a return current flows through the diode structure.

  For example, in the example in which the protruding region 16 is not provided, when a gate voltage is applied to the trench gate 30, a channel is formed on the entire side surface of the trench gate 30. For this reason, the emitter region 15 and the drift region 13 are connected through this channel, and gate interference that makes it difficult to apply a sufficient voltage in the forward direction of the diode structure constituted by the body region 14 and the drift region 13 appears strongly.

  On the other hand, in the reverse conducting IGBT 1 of this embodiment, as shown in FIG. 2, the protruding region 16 is provided deeper than the trench gate 30 in the contact formation range A14 (see FIG. 4). For this reason, in this part, it is avoided that the channel formed on the side surface of the trench gate 30 is connected to the drift region 13. Therefore, in the diode structure in the contact formation range A14 (see FIG. 4), even when a gate voltage is applied to the trench gate 30, a forward voltage is applied and gate interference is suppressed.

Hereinafter, other features of the reverse conducting IGBT 1 are listed.
(1) In the reverse conducting IGBT 1 of the present embodiment, the protruding region 16 is formed deep so as to cover the bottom surface of the trench gate 30. Instead of this example, the protruding region 16 may be configured not to cover the bottom surface of the trench gate 30. Even in this case, the protruding region 16 is selectively provided in the contact formation range A14 (see FIG. 4) and is formed deeper than the body region 14 in the emitter formation range A15 (see FIG. 4). It is said. In the contact formation range A14 in which such a protrusion region 16 is provided, the portion where the drift region and the trench gate are in contact with each other is reduced by the protrusion region 16, and therefore, the parasitic resistance operation at the time of gate interference compared to the emitter formation range A15. Is unlikely to occur. Therefore, even in such a configuration, in the diode structure in the contact formation range A14 (see FIG. 4), even when a gate voltage is applied to the trench gate 30, a forward voltage is applied and gate interference is suppressed. .

(2) In the reverse conducting IGBT 1 of the present embodiment, the protruding region 16 is not provided in the emitter formation range A15. For this reason, the ON state of the IGBT structure is not inhibited. In the reverse conducting IGBT 1 of the present embodiment, the protruding region 16 is not provided in the emitter formation range A15 even in the diode range. For this reason, when the IGBT structure is in the on state, electrons can be injected also from the emitter region 15 in the diode range, so that a low on voltage is realized.

(3) In the reverse conducting IGBT 1 of the present embodiment, the protruding regions 16 are provided in a distributed manner along the longitudinal direction of the trench gate 30. For this reason, since the diode structure in which gate interference is suppressed is arranged in many areas of the trench gate 30, the reflux current can be flowed at a low forward voltage.

(4) In the reverse conducting IGBT 1 of the present embodiment, the protruding region 16 is provided in both the diode range and the IGBT range. For example, even if the protruding region 16 is provided only in the diode range, the reverse conducting IGBT 1 can exhibit an effect of suppressing gate interference. Preferably, the protruding region 16 is provided in both the diode range and the IGBT range. Highly effective in suppressing gate interference.

(5) In the reverse conducting IGBT 1 of the present embodiment, an example in which a silicon substrate is used as the semiconductor layer 10 is illustrated, but the semiconductor material of the semiconductor layer 10 is not particularly limited. For example, silicon carbide, gallium nitride, aluminum nitride, or diamond may be used as the semiconductor material of the semiconductor layer 10.

(simulation result)
FIG. 5 shows a schematic perspective view of the unit structure of the reverse conducting IGBT used in the simulation for verifying the effect of the protruding region 16. In addition, the same code | symbol is attached | subjected about the component which is common in the above-mentioned Example. The protruding region 16 is selectively formed below the contact region 14 b and is not formed below the emitter region 15. When observed along the longitudinal direction of the trench gate 30, the unit width W14 of the contact region 14b is 3 μm, and the unit width W15 of the emitter region 15 is 1 μm. The unit width W30 of the trench gate 30 is 0.5 μm. The impurity concentration of the contact region 14b is 1 × ¹⁰ 20 ^{cm -3,} the impurity concentration of the main body region 14a is 1 × ¹⁰ 17 ^{cm -3,} the impurity concentration of the emitter region 15 is 1 × ¹⁰ 20 cm ^{- 3} .

FIG. 6 shows the relationship between the anode-cathode voltage and the anode current when the unit width W16 of the protruding region 16 is 0.7 μm, 1.2 μm, and 2.0 μm. At this time, the impurity concentration of the protruding region 16 is 1 × 10 ¹⁶ cm ⁻³ and the gate voltage is 15V. FIG. 7 shows the relationship between the anode-cathode voltage and the anode current when the impurity concentration of the protruding region 16 is 1.5 × 10 ¹⁶ cm ⁻³ , 3 × 10 ¹⁶ cm ⁻³ , and 5 × 10 ¹⁶ cm ^−3. Indicates. At this time, the unit width W16 of the protruding region 16 is 0.7 μm, and the gate voltage is 15V. Further, the comparative example in the figure is an example in which the protruding region 16 is not provided, Vg = 0V is an example in which no gate signal is input, and Vg = 15V is an example in which a gate signal is input. .

  As shown in FIG. 6, it was confirmed that when the unit width W16 of the protruding region 16 increases, the forward voltage of the diode structure decreases. Particularly, when the unit width W16 of the protruding region 16 is increased, the snapback voltage of the diode structure is remarkably lowered, and it has been confirmed that the diode structure starts to operate at a low forward voltage.

  Further, as shown in FIG. 7, it was confirmed that the forward voltage of the diode structure decreases even when the impurity concentration of the protruding region 16 increases. In particular, when the impurity concentration in the protruding region 16 is increased, the snapback voltage of the diode structure is significantly reduced, and it has been confirmed that the diode structure starts to operate at a low forward voltage.

  From the results of FIGS. 6 and 7, it was confirmed that it is effective to form the protruding regions 16 in order to suppress gate interference.

  Specific examples of the present invention have been described in detail above, but these are merely examples and do not limit the scope of the claims. The technology described in the claims includes various modifications and changes of the specific examples illustrated above. The technical elements described in this specification or the drawings exhibit technical usefulness alone or in various combinations, and are not limited to the combinations described in the claims at the time of filing. In addition, the technology exemplified in this specification or the drawings can achieve a plurality of objects at the same time, and has technical usefulness by achieving one of the objects.

10: Semiconductor layer 11: Collector region 12: Cathode region 13: Drift region 14: Body region 14a: Main body region 14b: Contact region 15: Emitter region 16: Protruding region 30: Trench gate 32: Trench gate electrode 34: Gate insulation film

Claims (4)

A reverse conducting IGBT used in a three-phase inverter,
A semiconductor layer;
A trench gate provided in a surface layer portion of the semiconductor layer,
The semiconductor layer is
A first conductivity type drift region in contact with the bottom surface of the trench gate;
A body region of a second conductivity type provided on the drift region and in contact with a side surface of the trench gate;
A plurality of first conductivity type emitter regions provided on the body region, in contact with a side surface of the trench gate, and distributed along the longitudinal direction of the trench gate;
A collector region of a second conductivity type provided in a part under the drift region;
A first conductivity type cathode region provided in another part under the drift region ,
The body region is
A contact region located between the emitter regions;
The contact region includes a projecting region located below a portion in contact with the trench gate,
The protruding region is formed deeper than the body region located below a portion where the emitter region is in contact with the trench gate ,
When the semiconductor layer is viewed in plan, the range in which the collector region exists is an IGBT range, and the range in which the cathode region exists is a diode range, the projecting region is provided at least in the diode range. A reverse conducting IGBT.   The reverse conducting IGBT according to claim 1, wherein the protruding region covers a bottom surface of the trench gate.   3. The reverse conducting IGBT according to claim 1, wherein the protruding regions are provided in a distributed manner along a longitudinal direction of the trench gate. The reverse conducting IGBT according to claim 1 , wherein the protruding region is also provided in the IGBT range.

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