JP6275371B2 - LIGHT EMITTING DEVICE, ELECTRONIC DEVICE, AND LIGHTING DEVICE - Google Patents

Description

The present invention relates to a light-emitting device, an electronic device, and a lighting device using organic electroluminescence (hereinafter also referred to as EL).

A light-emitting element using an organic compound as a light emitter has features such as being easy to reduce the thickness and weight, being able to respond to input signals at high speed, and being able to be driven using a DC low-voltage power supply. Applications to next-generation flat panel displays and lighting are being studied. In particular, a display device in which light emitting elements are arranged in a matrix is considered to be superior to a conventional liquid crystal display device in that it has a wide viewing angle and excellent visibility.

The light emission mechanism of a light emitting element (organic EL element) using an organic compound as a light emitter is as follows. First, by applying a voltage across a layer (EL layer) containing a light-emitting organic compound between a pair of electrodes, electrons injected from the cathode and holes injected from the anode are transported to the EL layer, Current flows. Then, the injected electrons and holes bring the light emitting organic compound in the EL layer into an excited state, and light emission is obtained from the excited light emitting organic compound. Singlet excitation and triplet excitation are known as excited states, and light emission is considered to be possible through either excited state.

The EL layer included in the light-emitting element has at least a light-emitting layer. In addition, the EL layer can have a stacked structure including a hole injection layer, a hole transport layer, an electron transport layer, an electron injection layer, and the like in addition to the light-emitting layer.

In the case of manufacturing a device that displays a full-color image, it is necessary to arrange at least light emitting elements that emit light of three colors of red, green, and blue in a matrix. As the method, a method of providing light emitting elements having different emission colors by separately coating the necessary portions of the EL layer for each color (hereinafter referred to as a coating method), all the light emitting elements emit white light, and each has a color filter. A method of obtaining each color by transmitting white light by overlapping (hereinafter referred to as a color filter method), and all light emitting elements emit light having a wavelength shorter than blue or blue, and a color conversion layer is superimposed on each. There is a method of obtaining each color by transmitting blue light or light having a shorter wavelength than blue (hereinafter referred to as a color conversion method). For example, Patent Document 1 describes an organic EL display device using a color filter method.

JP 2004-227854 A

For practical application of displays and lighting using organic EL elements, there is a demand for lower power consumption of light emitting devices using organic EL elements. In addition, there is a need for a high-quality light-emitting device that can emit bright colors and has little luminance unevenness.

An organic EL element constituting a light-emitting device includes a layer containing a light-emitting substance (light-emitting layer) between a first electrode provided separately for each element and a second electrode overlapping with the first electrode. An EL layer including: In order to manufacture a light-emitting device with low power consumption, a low driving voltage of the light-emitting element is required. For example, by providing the EL layer with a highly conductive layer, the driving voltage of the light-emitting element can be reduced.

However, in the case of a light-emitting device including a plurality of organic EL elements, if the EL layer has a highly conductive layer between the first electrode and the light-emitting layer, the adjacent light-emitting element has a highly conductive layer. Phenomenon that current flows through the via. There is a possibility that an adjacent non-light emitting element emits light due to current sneaking from the light emitting element in such a light emitting state. In particular, when a light emitting element unintentionally emits light in adjacent light emitting units that exhibit different colors, it becomes difficult to display a desired color or a bright color in the light emitting device.

Therefore, an object of one embodiment of the present invention is to provide a high-quality light-emitting device that has low power consumption, can emit bright colors, and has little luminance unevenness.

It is another object to provide an electronic device or a lighting device using the light-emitting device.

In order to suppress a current from flowing from a light emitting element in a light emitting state to a light emitting element in a non-light emitting state via a highly conductive layer between two light emitting units exhibiting different colors, the current between them is reduced. It suffices if the path does not exist, the shortest distance of the current path is long, or the current path of the shortest distance is narrow. In one embodiment of the present invention, a highly conductive layer is provided between the first electrode and the light-emitting layer, and a reverse-tapered partition is provided only between adjacent light-emitting units that exhibit different colors. The EL layer (at least a highly conductive layer) is divided by the partition.

With such a configuration, current wraparound from one light emitting element in a light emitting state to the other light emitting element in a non-light emitting state can be suppressed between adjacent light emitting units that exhibit different colors. Thus, unintentional light emission of the light emitting element in the non-light emitting state can be suppressed.

In addition, a reverse-tapered partition is not provided between adjacent light-emitting units that exhibit the same color. Therefore, it is possible to suppress an increase in resistance of the second electrode. In addition, luminance unevenness of the light-emitting device can be suppressed from being caused by light emission failure due to a potential drop caused by the resistance of the second electrode.

Specifically, according to one embodiment of the present invention, each of the plurality of light-emitting units includes a light-emitting element including a layer containing an organic compound (EL layer) between the first electrode and the second electrode, The electrode is divided for each light-emitting element, and the EL layer includes a layer containing a light-emitting substance (light-emitting layer), and a layer containing a donor substance and an acceptor substance provided between the first electrode and the light-emitting layer. And a light emitting device having a reverse-tapered partition wall only between adjacent light emitting units that exhibit different colors.

The light-emitting device includes a first light-emitting unit and a second light-emitting unit that are adjacent to each other and have different colors via a partition wall, and the length of the long side of the top surface shape of the partition wall is the first light-emitting unit in the first light-emitting unit. It is preferable that it is 90% or more of the length of the side facing 2 light emitting units.

With the above configuration, the width of the shortest distance current path from the light emitting element of the first light emitting unit to the light emitting element of the second light emitting unit can be sufficiently narrowed.

In the above light-emitting device, it is preferable that an EL layer (at least a layer containing a donor substance and an acceptor substance) be separated between light-emitting units that are adjacent to each other and have different colors with a partition.

The above configuration is particularly preferable because there is no current path from the EL layer of one light emitting unit to the EL layer of the other light emitting unit between the light emitting units that are adjacent to each other and have different colors via the partition walls.

In the light emitting device, the light emitting unit having the same color continuously provided in one direction has the second electrode made of the same layer, and the second light emitting unit includes a plurality of light emitting units. It is preferable that the electrode and the common wiring are electrically connected.

With the above structure, luminance unevenness of the light-emitting device can be suppressed from occurring due to light emission failure due to a potential drop due to the resistance of the second electrode.

In the light emitting device, it is preferable that the common wiring is provided outside the light emitting portion.

With the above structure, high voltage due to static electricity or the like generated during the manufacturing process of the light-emitting device or when the light-emitting device is used causes electrostatic breakdown (ESD;) to elements such as light-emitting elements and transistors included in the light-emitting portion. Inducing Electro Static Discharge) can be suppressed.

In the above light-emitting device, the donor substance is preferably an alkali metal, alkaline earth metal, rare earth metal, alkali metal compound, alkaline earth metal compound, or rare earth metal compound.

In the light emitting device, the layer containing the organic compound includes a first layer including a layer including a light emitting organic compound, a second layer including a layer including the light emitting organic compound, and a first layer. And an intermediate layer formed between the second layer and the second layer.

Another embodiment of the present invention is an electronic device including the above light-emitting device in a display portion. Another embodiment of the present invention is a lighting device including the above light-emitting device in a lighting portion.

Since the light-emitting device includes a highly conductive layer in the EL layer, an electronic device or a lighting device with low power consumption can be realized.

In addition, since a reverse-tapered partition wall is provided only between adjacent light emitting units exhibiting different colors, current flows from one light emitting element in a light emitting state to the other light emitting element in a non-light emitting state between these light emitting units. Can be suppressed. Thus, unintentional light emission of the light emitting element in the non-light emitting state can be suppressed.

In addition, a reverse-tapered partition is not provided between adjacent light-emitting units that exhibit the same color. Therefore, it is possible to suppress an increase in resistance of the second electrode. In addition, luminance unevenness of the light-emitting device can be suppressed from being caused by light emission failure due to a potential drop caused by the resistance of the second electrode.

Therefore, a high-quality electronic device or lighting device that can emit bright colors and has less luminance unevenness can be realized.

According to one embodiment of the present invention, a high-quality light-emitting device with low power consumption, light emission with vivid colors, and low luminance unevenness can be provided.

In addition, an electronic device or a lighting device using the light-emitting device can be provided.

FIG. 6 illustrates an example of a light-emitting device of one embodiment of the present invention. FIG. 6 illustrates an example of a light-emitting device of one embodiment of the present invention. FIG. 6 illustrates an example of a light-emitting device of one embodiment of the present invention. FIG. 6 illustrates an example of a light-emitting device of one embodiment of the present invention. FIG. 6 illustrates an example of a light-emitting device of one embodiment of the present invention. FIG. 6 illustrates an example of an EL layer of one embodiment of the present invention. FIG. 14 illustrates an example of an electronic device of one embodiment of the present invention. FIG. 6 illustrates an example of a lighting device of one embodiment of the present invention. FIG. 6 illustrates an example of a light-emitting device of one embodiment of the present invention. Sectional drawing which concerns on Example 1. FIG. 2 is a cross-sectional photograph and a luminescence photograph according to Example 1. FIG. The figure which shows the EL layer of an Example. FIG. 6 is a top view according to the second embodiment. 2 is a cross-sectional photograph according to Example 2. FIG. 3 is a light emission photograph of a configuration example of Example 2. FIG. The luminescence photograph of the comparative example of Example 2.

Embodiments will be described in detail with reference to the drawings. However, the present invention is not limited to the following description, and it is easily understood by those skilled in the art that modes and details can be variously changed without departing from the spirit and scope of the present invention. Therefore, the present invention should not be construed as being limited to the description of the embodiments below. Note that in structures of the invention described below, the same portions or portions having similar functions are denoted by the same reference numerals in different drawings, and description thereof is not repeated.

(Embodiment 1)
In this embodiment, a light-emitting device of one embodiment of the present invention will be described with reference to FIGS.

The light-emitting device of one embodiment of the present invention includes a plurality of light-emitting units. Each light emitting unit includes a light emitting element having a layer containing an organic compound (EL layer) between a first electrode and a second electrode. The first electrode is divided for each light emitting element. Since the EL layer includes a layer containing a light-emitting substance and a highly conductive layer provided between the first electrode and the layer containing the light-emitting substance, in one embodiment of the present invention, a driving voltage A light-emitting element with low power consumption or a light-emitting device with low power consumption can be realized.

The light-emitting device of one embodiment of the present invention includes a reverse-tapered partition wall only between adjacent light-emitting units that exhibit different colors. Therefore, according to one embodiment of the present invention, even when the EL layer includes a highly conductive layer as described above, the light emitting units between adjacent light emitting units exhibiting different colors can It is possible to suppress the current from flowing to the other light emitting element in the light emitting state. Therefore, unintentional light emission of the light emitting unit in a non-light emitting state can be suppressed, and a light emitting device that can emit bright colors can be realized.

In addition, the reverse-tapered partition walls are not provided between adjacent light emitting units that exhibit the same color. Therefore, it is possible to suppress an increase in the resistance of the second electrode. And it can suppress that the brightness nonuniformity of a light-emitting device arises from the light emission failure by the electric potential drop resulting from resistance of the 2nd electrode.

FIG. 1A illustrates an example of a positional relationship between a reverse-tapered partition 150 (an upper surface shape) and a light-emitting unit in the light-emitting device of one embodiment of the present invention. FIGS. 1B and 1C are cross-sectional views taken along lines AB and CD in FIG. 1A, respectively.

In the present embodiment, the light emitting device is configured to express one color with light emitting units of three colors of R (red), G (green), and B (blue), but color elements other than RGB are used. For example, yellow, cyan, magenta, etc. may be used. In this embodiment mode, the EL layers included in each light-emitting unit have the same configuration (for example, a configuration that emits white light). Each light emitting unit includes a color filter and a color conversion layer (not shown). For example, a red light emitting unit has a red color filter and emits red light.

As shown in FIG. 1B, the red light emitting unit 160R includes the light emitting element 130 (the first electrode 118, the EL layer 120, and the second electrode 122) over the insulating surface 100. In addition, an end portion of the first electrode 118 is covered with an insulating layer 124 having a tapered shape. Similarly, the green light emitting unit 160G and the blue light emitting unit 160B each have a light emitting element on the insulating surface 100. The EL layer included in each light-emitting element includes a layer containing a light-emitting substance and a highly conductive layer provided between the first electrode and the layer containing the light-emitting substance. Thus, according to one embodiment of the present invention, a light-emitting element with low driving voltage or a light-emitting device with low power consumption can be realized.

As the highly conductive layer, a layer having a light-transmitting property with respect to visible light and containing a highly conductive substance (eg, indium tin oxide (In ₂ O ₃ —SnO ₂ , ITO)) or a donor substance And a layer containing an acceptor substance can be given as an example. Specifically, as a layer containing a donor substance and an acceptor substance, an alkali metal, an alkaline earth metal, a rare earth metal, an alkali metal compound, an alkaline earth metal compound, or a rare earth metal compound is added to an organic compound. A layer or a layer containing a conductive polymer such as poly (3,4-ethylenedioxythiophene) / poly (styrenesulfonic acid) (PEDOT / PSS) can be used. In addition, the layer containing a donor substance and an acceptor substance is not only a layer containing a donor substance and an acceptor substance in the same film, but also a layer containing a donor substance and a layer containing an acceptor substance are stacked. May be. In addition, specific structures of the light-emitting element and materials that can be used for the light-emitting element are described in detail in Embodiments 3 and 4.

In the light-emitting device shown in FIGS. 1A and 1B, light emission that is adjacent and has different colors, such as between the red light-emitting unit 160R and the green light-emitting unit 160G, or between the green light-emitting unit 160G and the blue light-emitting unit 160B. A reverse-tapered partition 150 is provided on the insulating layer 124 between the units.

In the present specification, the inverted tapered shape is a shape having a side portion or an upper portion protruding in a direction parallel to the insulating surface from the bottom portion.

The partition wall 150 can be formed using an inorganic insulating material, an organic insulating material, or a metal material. For example, as the organic insulating material, a negative or positive photosensitive resin material, a non-photosensitive resin material, or the like can be used. Further, titanium, aluminum, or the like can be used as the metal material.

The partition 150 illustrated in FIG. 1B can be formed, for example, by forming a negative-type organic film having photosensitivity and performing exposure and development processing. Here, by adjusting the exposure intensity so that the exposure intensity decreases toward the lower portion of the organic film, the partition wall 150 can be formed in a reverse taper shape. Alternatively, it can be formed by forming a film made of an inorganic material, patterning a desired region, and processing the film made of an inorganic material. The film made of an inorganic material can be formed using, for example, an inorganic insulating material such as silicon oxide or silicon nitride, or a conductive material such as titanium or aluminum.

Such a reverse-tapered partition wall can physically divide a film formed from above the partition wall. For example, as illustrated in FIG. 1B, the EL layer 120 formed over the partition 150 is electrically separated with the partition 150 as a boundary. Thus, current can be prevented from flowing from the light emitting element to the adjacent light emitting element through the partition 150.

Note that in the case where a conductive material is used for the partition wall 150, it is preferable that at least the highly conductive layer of the EL layer 120 is not in contact with the partition wall 150. The second electrode 122 is more preferably provided in contact with the partition wall 150. By applying such a structure, a current flows from the light emitting element to the adjacent light emitting element through the partition wall 150, and unintentional light emission is suppressed, and the second electrode 122 is interposed through the partition wall 150. Since conduction and a current path are ensured, a potential drop due to the resistance of the second electrode 122 can be suppressed.

Note that the shape of the partition wall 150 may be any shape as long as the EL layer (at least a layer having high conductivity) can be divided.

FIG. 1D illustrates another example of a cross-sectional shape of a partition which can be applied to one embodiment of the present invention. A T-shaped partition wall 150 illustrated in FIG. 1D includes a leg portion 150a and a base portion 150b.

As a method for forming the partition wall 150 including the leg portion 150a and the base portion 150b, for example, a film made of an organic insulating material is first formed, and a film made of an inorganic insulating material is formed thereon. After that, patterning is performed in a desired region, a film made of an inorganic insulating material is processed, and then a film made of an organic insulating material is processed using the film made of the inorganic insulating material as a mask (so-called hard mask). The film made of an organic insulating material can be formed by using wet etching, dry etching, or the like. The portion formed by the film made of the organic insulating material becomes the leg portion 150a, and the portion formed by the film made of the inorganic insulating material becomes the base portion 150b.

As a material that can be used for the leg 150a, for example, a negative or positive photosensitive resin material, a non-photosensitive resin material, or the like can be used. When a light-shielding material is used for the base part 150b, the leg part 150a may be formed by exposure or the like using the base part 150b as a light shielding film.

As a material that can be used for the base 150b, for example, an inorganic insulating material such as silicon oxide or silicon nitride, or a conductive metal material such as titanium or aluminum can be used.

Note that the leg portion 150a may be manufactured using an inorganic insulating material and the base portion 150b using a photosensitive organic material. Moreover, you may use combining the inorganic material from which an etching rate differs in the leg part 150a and the base part 150b. Moreover, you may use the organic resin film which has the opposite photosensitivity for the leg part 150a and the base part 150b, respectively. FIG. 1D illustrates the case where the partition wall 150 has a two-layer structure; however, the partition wall 150 may have a single layer structure or a multilayer structure of three or more layers.

In addition, it is preferable that the partition wall 150 be formed using a light-shielding material because light emission from the light-emitting element can be particularly suppressed from leaking to an adjacent light-emitting unit.

<About adjacent light emitting units that display different colors>
Hereinafter, the partition 150 between the red light emitting unit 160R and the green light emitting unit 160G will be described as an example. In FIG. 3, the current path of the EL layer when the light emitting element of the red light emitting unit 160R is in a light emitting state and the light emitting element of the green light emitting unit 160G is in a non-light emitting state is indicated by an arrow.

1A and 1B includes a partition 150 between a red light emitting unit 160R and a green light emitting unit 160G. The length of the long side in the upper surface shape of the partition wall 150 is approximately equal to the length of the side facing the green light emitting unit 160G in the red light emitting unit 160R (or the red light emitting unit 160R in the green light emitting unit 160G). Is approximately equal to the length of the opposite side).

As shown in FIG. 1C, the EL layer is not divided in the region where the partition 150 is not provided, but in the region where the partition 150 is provided as shown in FIG. The layer is divided.

By applying such a configuration, a current path from the EL layer of the red light emitting unit 160R to the EL layer of the adjacent green light emitting unit 160G as compared with the configuration in which the partition wall 150 is not provided (FIG. 3A). The shortest distance can be increased (FIG. 3B). Therefore, current can be prevented from flowing from the light emitting element of the red light emitting unit 160R in the light emitting state to the light emitting element of the green light emitting unit 160G in the non light emitting state, and the light emitting unit in the non light emitting state emits light unintentionally. Can be suppressed.

The upper surface shape of the partition 150 is not limited to the above. 2A to 2D illustrate another example of the positional relationship between the reverse-tapered partition 150 and the light-emitting unit in the light-emitting device of one embodiment of the present invention.

The light-emitting device illustrated in FIG. 2A includes a partition wall 150 between a red light-emitting unit 160R and a green light-emitting unit 160G. The length of the long side in the upper surface shape of the partition wall 150 is 50% of the length of the side facing the green light emitting unit 160G in the red light emitting unit 160R (or the red side in the green light emitting unit 160G). 50% of the length of the side facing the light emitting unit 160R).

By applying such a configuration, the shortest distance from the EL layer of the red light emitting unit 160R to the EL layer of the adjacent green light emitting unit 160G as compared with the configuration in which the partition wall 150 is not provided (FIG. 3A). The width L of the current path can be reduced (FIG. 3C). Therefore, current can be prevented from flowing from the light emitting element of the red light emitting unit 160R in the light emitting state to the light emitting element of the green light emitting unit 160G in the non-light emitting state through the highly conductive layer, and the light emitting element does not emit light. It can suppress that the light emission unit of a state emits light unintentionally.

As shown in FIG. 2B, the length of the long side in the upper surface shape of the partition wall 150 is 90% or more of the length of the side facing the green light emitting unit 160G in the red light emitting unit 160R ( Or, it is preferably 90% or more of the length of the side facing the red light emitting unit 160R in the green light emitting unit 160G). Since the long side of the upper surface shape of the partition wall 150 is long, the width of the shortest distance current path from the EL layer of the red light emitting unit 160R to the EL layer of the adjacent green light emitting unit 160G can be particularly narrowed. is there.

In addition, as illustrated in FIG. 2C, a plurality of partition walls 150 may be provided between adjacent light emitting units that exhibit different colors.

In the configurations of FIGS. 1 and 2A to 2C, the second electrode of the green light emitting unit 160G adjacent to the second electrode of the red light emitting unit 160R is electrically connected. With such a structure, it is possible to suppress the occurrence of luminance unevenness in the light-emitting device due to light emission failure due to a potential drop due to the resistance of the second electrode.

In FIG. 2D, the EL layer of the red light emitting unit 160R is separated from the EL layer of the adjacent green light emitting unit 160G through the partition wall 150, and the EL layer of the red light emitting unit 160R is separated. The current path to the EL layer of the adjacent green light emitting unit 160G does not exist (FIG. 3D). Therefore, a current can be particularly prevented from flowing from the light-emitting element of the red light-emitting unit 160R in the light-emitting state to the light-emitting element of the green light-emitting unit 160G in the non-light-emitting state.

<Between light-emitting units exhibiting the same color continuously provided in one direction>
In the light emitting device shown in FIGS. 1A and 1B, the red light emitting unit 160R and the red light emitting unit 161R, the green light emitting unit 160G and the green light emitting unit 161G, the blue light emitting unit 160B and the blue light emitting unit 161G are used. Only the insulating layer 124 is formed between the light emitting units having the same color continuously provided in one direction, such as between the light emitting units 161B, and the reverse-tapered partition 150 is not provided on the insulating layer 124. .

Therefore, it is possible to suppress the occurrence of luminance unevenness in the light-emitting device due to a light emission failure due to a potential drop due to the resistance of the second electrode.

As described above, in the light-emitting device of one embodiment of the present invention, a highly conductive layer is provided between the first electrode and the light-emitting layer, and an inversely tapered shape is provided only between adjacent light-emitting units that exhibit different colors. In this configuration, a partition wall is provided. By applying the structure, it is possible to provide a high-quality light-emitting device with low power consumption, capable of emitting bright colors and having less luminance unevenness.

This embodiment can be combined with any of the other embodiments as appropriate.

(Embodiment 2)
In this embodiment, a light-emitting device of one embodiment of the present invention will be described with reference to FIGS. In this embodiment, a light-emitting device of one embodiment of the present invention including common wiring outside the light-emitting portion including the light-emitting unit described in Embodiment 1 will be described in detail.

In the light-emitting device of one embodiment of the present invention, the light-emitting units exhibiting the same color that are continuously provided in one direction include the second electrode including the same layer. The common wiring is electrically connected to the second electrode and applies a common potential to the second electrode. By applying the structure, a potential drop of the second electrode can be suppressed, and a high-quality light-emitting device with little luminance unevenness can be provided.

4A to 4C illustrate an example of a positional relationship between the reverse-tapered partition wall 150, the second electrode 122, and the common wiring 170 in the light-emitting device of one embodiment of the present invention. 4A to 4C, a conductive film provided over the partition wall 150 (a film provided when forming the second electrode 122) is omitted.

As shown in FIGS. 4A to 4C, the common wiring 170 is provided outside the light emitting portion 802. Note that the EL layer of the light-emitting element is formed at least in the light-emitting portion 802.

4A and 4B, the common wiring 170 may be provided so that the major axis of the common wiring 170 is substantially perpendicular to the major axis of the partition 150 in the top surface shape.

In particular, as shown in FIG. 4B, when a pair of common wirings 170 is provided so that the major axis thereof is substantially perpendicular to the major axis of the partition wall in the upper surface shape, the common wiring 170 is continuously provided in one direction. For the light emitting units exhibiting the same color, the in-plane distribution of the potential of the second electrode can be improved. Therefore, luminance unevenness of the light emitting device can be suppressed, which is preferable.

Further, as shown in FIGS. 4A and 4B, even when the partition 150 is provided between adjacent light emitting units that exhibit different colors and the second electrode does not conduct between these light emitting units, By providing the common wiring 170, a common potential can be applied to the second electrode between adjacent light emitting units that exhibit different colors.

Alternatively, as illustrated in FIG. 4C, a common wiring 170 may be provided so as to surround the light-emitting portion 802. With such a structure, high voltage due to static electricity or the like generated during the manufacturing process of the light-emitting device or when the light-emitting device is used causes an electrostatic breakdown (light-emitting element, transistor, or other element constituting the light-emitting portion). It is possible to suppress the occurrence of ESD (Electro Static Discharge).

In addition, as shown in FIG. 4C, when the partition 150 is provided between adjacent light emitting units having different colors and the second electrode is electrically connected between these light emitting units, the light emitting unit By adopting a configuration in which the common wiring 170 and the second electrode 122 are electrically connected so as to surround the 802, the in-plane distribution of the potential of the second electrode can be improved in the entire light emitting portion 802. . Therefore, luminance unevenness of the light emitting device can be suppressed, which is preferable.

The common wiring 170 includes the same layer as the wiring, electrodes, and the like constituting the light emitting unit, so that the common wiring can be provided without increasing the number of steps. For example, it can be formed of the same layer as the first electrode of the light emitting element. In the case where the light-emitting unit includes a transistor, the light-emitting unit can be formed using the same layer as the electrode of the transistor.

As described above, the light-emitting device of one embodiment of the present invention has a structure in which the common wiring that is electrically connected to the second electrode is provided. By applying the structure, a potential drop of the second electrode can be suppressed, and a high-quality light-emitting device with little luminance unevenness can be provided.

This embodiment can be combined with any of the other embodiments as appropriate.

(Embodiment 3)
A light-emitting device of one embodiment of the present invention is described with reference to FIGS. 9 is a plan view showing the light-emitting device, and FIGS. 5A and 5B are cross-sectional views of FIG. 9 taken along a chain line EF. Note that in FIG. 9, some components such as the insulating layer 104 are omitted. 5A and 5B are the same except for the structure of the partition walls.

The light-emitting device of this embodiment includes a plurality of light-emitting units in a light-emitting unit. Each light emitting unit includes a light emitting element having an EL layer between a first electrode and a second electrode. The first electrode is divided for each light emitting element. Since the EL layer includes a layer containing a light-emitting substance and a highly conductive layer provided between the first electrode and the layer containing the light-emitting substance, the driving voltage of the light-emitting element is low and consumption is reduced. A light-emitting device with low power can be realized.

Further, the light-emitting device of this embodiment has a reverse-tapered partition wall only between adjacent light-emitting units that exhibit different colors. Therefore, even when the EL layer includes a highly conductive layer, current flows from one light emitting element in a light emitting state to the other light emitting element in a non-light emitting state between adjacent light emitting units exhibiting different colors. This can be suppressed. Therefore, unintentional light emission of the light emitting unit in a non-light emitting state can be suppressed, and a light emitting device that can emit bright colors can be realized.

In addition, the reverse-tapered partition walls are not provided between adjacent light emitting units that exhibit the same color. In addition, a common wiring electrically connected to the second electrode is provided. Therefore, it is possible to suppress an increase in the resistance of the second electrode. Accordingly, it is possible to realize a high-quality light-emitting device that suppresses the potential drop of the second electrode and has less luminance unevenness.

An active matrix light-emitting device according to this embodiment includes a light-emitting portion 802, a drive circuit portion 803 (gate-side drive circuit portion), a drive circuit portion 804 (source-side drive circuit portion), and a contact portion 807 over a substrate 801. And a fixing portion 805. The light emitting portion 802, the drive circuit portions 803 and 804, and the contact portion 807 are sealed in a space formed by the substrates 801 and 806 and the fixing portion 805.

Note that the light-emitting portion 802 and the contact portion 807 in the light-emitting device of this embodiment have the structure illustrated in FIG.

On the substrate 801, lead wirings for connecting external input terminals (such as a video signal, a clock signal, a start signal, or a reset signal) and a potential to the driving circuit portions 803 and 804 are provided. . In this example, an FPC 808 (Flexible Printed Circuit) is provided as an external input terminal. Note that a printed wiring board (PWB) may be attached to the FPC 808. The light-emitting device in this specification includes not only a light-emitting device body but also a state in which an FPC or PWB is attached to the light-emitting device body.

The driver circuit portions 803 and 804 include a plurality of transistors. FIG. 5 illustrates an example in which the driver circuit portion 803 includes a CMOS circuit in which an n-channel transistor 152 and a p-channel transistor 153 are combined. The circuit of the driver circuit portion can be formed by various CMOS circuits, PMOS circuits, or NMOS circuits. In this embodiment mode, a driver integrated type in which a driving circuit is formed on a substrate on which a light emitting portion is formed is shown, but the present invention is not limited to this configuration, and the substrate on which the light emitting portion is formed. A driving circuit can be formed on a different substrate.

The light-emitting portion 802 includes a switching transistor, a current control transistor 140, and a plurality of first electrodes 118 electrically connected to the wiring (source electrode or drain electrode) of the current control transistor 140. The light emitting unit is formed. In addition, an insulating layer 124 is formed so as to cover an end portion of the first electrode 118. In addition, the partition wall 150 described in Embodiment 1 is provided over the insulating layer 124.

The light-emitting element 130 includes a first electrode 118, a layer containing an organic compound (EL layer) 120, and a second electrode 122.

In the contact portion 807, the second electrode 122 and the common wiring 170 are electrically connected. In this embodiment mode, an example in which the common wiring 170 is manufactured in the same process as the first electrode 118 (an example in which the common wiring 170 is formed using the same material as the first electrode 118) is described. It is not limited to. For example, the conductive layer included in the transistors 140, 152, and 153 may be formed using the same material.

≪Material≫
Examples of materials that can be used for the light-emitting device of one embodiment of the present invention are described below.

[Substrate 801, 806]
As the substrate, materials such as glass, quartz, and organic resin can be used. The substrate on the side from which light from the light-emitting element 130 is extracted is formed using a material that transmits light.

When an organic resin is used as the substrate, examples of the organic resin include polyester resins such as polyethylene terephthalate (PET) and polyethylene naphthalate (PEN), polyacrylonitrile resins, polyimide resins, polymethyl methacrylate resins, and polycarbonate (PC) resins. Polyether sulfone (PES) resin, polyamide resin, cycloolefin resin, polystyrene resin, polyamideimide resin, polyvinyl chloride resin, or the like can be used. A substrate in which glass fiber is impregnated with an organic resin or a substrate in which an inorganic filler is mixed with an organic resin can also be used.

Note that the insulating layer 104 is provided on the surface of the substrate 801 in order to prevent impurities contained in the substrate 801 from diffusing into elements provided over the substrate 801.

[Transistor]
There is no particular limitation on the structure of the transistor (such as the transistors 140, 152, and 153) used in the light-emitting device of one embodiment of the present invention. A top-gate transistor may be used, or a bottom-gate transistor such as an inverted staggered transistor may be used. There is no particular limitation on the material used for the transistor.

The gate electrode 106 is formed as a single layer or a stacked layer using a metal material such as molybdenum, titanium, chromium, tantalum, tungsten, aluminum, copper, neodymium, or scandium, or an alloy material containing these elements, for example. Can do.

The gate insulating layer 108 can be formed using, for example, a single layer or a stack of silicon oxide, silicon nitride, silicon oxynitride, silicon nitride oxide, or aluminum oxide by a plasma CVD method, a sputtering method, or the like.

The semiconductor layer 110 can be formed using silicon or an oxide semiconductor. Examples of silicon include single crystal silicon and polycrystalline silicon. As an oxide semiconductor, an In—Ga—Zn—O-based metal oxide or the like can be used as appropriate. Note that as the semiconductor layer 110, an oxide semiconductor that is an In—Ga—Zn—O-based metal oxide is used to form a semiconductor layer with low off-state current, whereby the light-emitting element 130 to be formed later is turned off. Leakage current can be suppressed, which is preferable.

As the source electrode layer 112a and the drain electrode layer 112b, for example, a metal film containing an element selected from Al, Cr, Cu, Ta, Ti, Mo, and W, or a metal nitride film containing the element (titanium nitride film) , Molybdenum nitride film, tungsten nitride film) or the like can be used. Further, a refractory metal film such as Ti, Mo, W or the like or a metal nitride film thereof (titanium nitride film, molybdenum nitride film, tungsten nitride film) is formed on one or both of the lower side or upper side of the metal film such as Al or Cu. It is good also as a structure which laminated | stacked. The source electrode layer 112a and the drain electrode layer 112b may be formed using a conductive metal oxide. Examples of the conductive metal oxide include indium oxide (In ₂ O ₃ etc.), tin oxide (SnO ₂ etc.), zinc oxide (ZnO), ITO, indium zinc oxide (In ₂ O ₃ —ZnO etc.) or these A metal oxide material containing silicon oxide can be used.

The first insulating layer 114 has an effect of suppressing diffusion of impurities into a semiconductor included in the transistor. As the first insulating layer 114, an inorganic insulating film such as a silicon oxide film, a silicon oxynitride film, or an aluminum oxide film can be used.

As the second insulating layer 116, it is preferable to select an insulating film having a planarization function in order to reduce surface unevenness due to the transistor. For example, an organic material such as polyimide, acrylic, or benzocyclobutene can be used. In addition to the organic material, a low dielectric constant material (low-k material) or the like can be used. Note that the second insulating layer 116 may be formed by stacking a plurality of insulating films formed using these materials.

[Insulating layer 124]
The insulating layer 124 is provided so as to cover an end portion of the first electrode 118. In order to improve the coverage of the second electrode 122 formed in the upper layer of the insulating layer 124, it is preferable that a curved surface having a curvature be formed at the upper end portion or the lower end portion of the insulating layer 124. For example, it is preferable that the upper end portion or the lower end portion of the insulating layer 124 have a curved surface having a radius of curvature (0.2 μm to 3 μm). As a material for the insulating layer 124, an organic compound such as a negative photosensitive resin or a positive photosensitive resin, or an inorganic compound such as silicon oxide or silicon oxynitride can be used. In addition, it is preferable to provide the insulating layer 124 with a light-shielding material because light emitted from the light-emitting element can be prevented from leaking to an adjacent light-emitting unit.

[Light emitting element]
The first electrode 118 is provided on the side opposite to the light extraction side and is formed using a reflective material. As the reflective material, a metal material such as aluminum, gold, platinum, silver, nickel, tungsten, chromium, molybdenum, iron, cobalt, copper, or palladium can be used. In addition, an alloy containing aluminum (aluminum alloy) such as an alloy of aluminum and titanium, an alloy of aluminum and nickel, an alloy of aluminum and neodymium, or an alloy containing silver such as an alloy of silver and copper can be used. An alloy of silver and copper is preferable because of its high heat resistance.

The EL layer 120 includes at least a layer containing a light-emitting substance (light-emitting layer) and a highly conductive layer provided between the first electrode and the light-emitting layer. In addition, a layer containing a substance having a high electron transporting property, a layer containing a substance having a high hole transporting property, a layer containing a substance having a high electron injecting property, a layer containing a substance having a high hole injecting property, a bipolar substance (electron A stacked structure in which layers including a substance having a high transportability and a high hole-transport property are combined as appropriate can be formed. An example of the structure of the EL layer will be described in detail in Embodiment 4.

As the light-transmitting material that can be used for the second electrode 122, indium oxide, indium tin oxide (ITO), indium zinc oxide, zinc oxide, zinc oxide to which gallium is added, or the like can be used. .

As the second electrode 122, a metal material such as gold, platinum, nickel, tungsten, chromium, molybdenum, iron, cobalt, copper, palladium, or titanium can be used. Alternatively, nitrides of these metal materials (for example, titanium nitride) may be used. Alternatively, graphene or the like may be used. Note that in the case where a metal material (or a nitride thereof) is used, it may be thinned so as to have a light-transmitting property.

Note that in the present embodiment, the light emission device having the top emission structure is illustrated, but a light emission device having a bottom emission structure (bottom emission structure) or a dual emission structure (double emission structure) may be used.

[Color filter / Black matrix]
A color filter 166 is provided on the substrate 806 so as to overlap with the light emitting element 130. The color filter 166 is provided for the purpose of adjusting the color of light emitted from the light emitting element 130. For example, when a full-color display device is formed using a light emitting element that emits white light, a plurality of light emitting units provided with different color filters are used. In that case, three colors of red (R), green (G), and blue (B) may be used, or four colors including yellow (Y) may be used.

A black matrix 164 is provided between the adjacent color filters 166. The black matrix 164 blocks light from the light emitting elements 130 of adjacent light emitting units, and suppresses color mixing between adjacent light emitting units. Here, by providing the end portion of the color filter 166 so as to overlap the black matrix 164, light leakage can be suppressed. The black matrix 164 can be formed using a material that blocks light emitted from the light-emitting element 130, and can be formed using a material such as a metal or an organic resin. Note that the black matrix 164 may be provided in a region other than the light emitting portion 802 such as the drive circuit portion 803.

An overcoat 168 is formed to cover the color filter 166 and the black matrix 164. The overcoat 168 is made of a material that transmits light emitted from the light emitting element 130. For example, an inorganic insulating film or an organic insulating film can be used. Note that the overcoat 168 may be omitted if unnecessary.

[Fixed portion 805]
The substrates 801 and 806 are bonded to each other at the fixing portion 805 with a sealing material or the like. As the sealing material, an organic resin such as a thermosetting resin or a photo-curing resin, a glass frit including a low-melting glass, or the like can be used. Moreover, the desiccant may be contained in the sealing material. For example, a substance that absorbs moisture by chemical adsorption, such as an alkaline earth metal oxide (such as calcium oxide or barium oxide), can be used. As another desiccant, a substance that adsorbs moisture by physical adsorption, such as zeolite or silica gel, may be used. The inclusion of a desiccant is preferable because impurities such as moisture in the sealing region are reduced and the reliability of the light-emitting element 130 is improved.

The light emitting element 130 is provided in a sealing region 169 surrounded by the substrates 801 and 806 and the sealant. The sealing region 169 may be filled with an inert gas such as a rare gas or a nitrogen gas, or a solid such as an organic resin, or may be in a reduced pressure atmosphere. Even when the sealing region 169 is filled with a gas or a solid, or in a reduced-pressure atmosphere, it is preferable that impurities such as water and oxygen be reduced in the sealing region because the reliability of the light-emitting element is improved. .

In addition, the partition can have a function as a spacer. For example, as illustrated in FIG. 5B, a structure in which the substrate 806 and the partition wall 151 are in contact with each other through the overcoat 168, the black matrix 164, or the like can be used.

Note that although a light-emitting device using a color filter method has been described as an example in this embodiment mode, the structure of the present invention is not limited to this. For example, a coloring method or a color conversion method may be applied.

This embodiment can be combined with any of the other embodiments as appropriate.

(Embodiment 4)
In this embodiment, structural examples of EL layers that can be applied to the light-emitting device of one embodiment of the present invention will be described with reference to FIGS.

In one embodiment of the present invention, the EL layer includes a layer containing a light-emitting substance (light-emitting layer) and a layer having high conductivity. Thus, according to one embodiment of the present invention, a light-emitting element with low driving voltage or a light-emitting device with low power consumption can be realized.

A known substance can be used for the EL layer, and either a low molecular compound or a high molecular compound can be used. Note that the substance forming the EL layer includes not only an organic compound but also a structure including an inorganic compound in part.

In FIG. 6A, the EL layer 120 is provided between the first electrode 118 and the second electrode 122. The EL layer 120 includes a light-emitting layer 703 and a highly conductive layer provided between the first electrode 118 and the light-emitting layer 703.

The EL layer 120 illustrated in FIG. 6A is stacked in the order of a hole injection layer 701, a hole transport layer 702, a light-emitting layer 703, an electron transport layer 704, and an electron injection layer 705 from the first electrode 118 side. Has been.

For example, by using a conductive polymer such as poly (3,4-ethylenedioxythiophene) / poly (styrenesulfonic acid) (PEDOT / PSS) for the hole injection layer 701, the hole injection layer 701 is made conductive. It can be set as a layer with high property.

A plurality of EL layers may be stacked between the first electrode 118 and the second electrode 122 as illustrated in FIG. In this case, a charge generation layer 709 is preferably provided between the stacked first EL layer 120a and second EL layer 120b. A light-emitting element having such a structure hardly causes problems such as energy transfer and quenching, and can easily be a light-emitting element having both high light emission efficiency and a long lifetime by widening the range of material selection. It is also easy to obtain phosphorescence emission with one EL layer and fluorescence emission with the other. This structure can be used in combination with the structure of the EL layer described above.

Further, by making the light emission colors of the respective EL layers different, light emission of a desired color can be obtained as the whole light emitting element. For example, in a light-emitting element having two EL layers, a light-emitting element that emits white light as a whole of the light-emitting element by making the emission color of the first EL layer and the emission color of the second EL layer have a complementary relationship It is also possible to obtain The complementary color refers to a relationship between colors that become achromatic when mixed. That is, white light emission can be obtained by mixing light obtained from substances that emit light of complementary colors. The same applies to a light-emitting element having three or more EL layers.

As shown in FIG. 6C, the EL layer 120 includes a hole injection layer 701, a hole transport layer 702, a light-emitting layer 703, and an electron transport layer between the first electrode 118 and the second electrode 122. 704, an electron injection buffer layer 706, an electron relay layer 707, and a composite material layer 708 in contact with the second electrode 122 may be provided.

Providing the composite material layer 708 in contact with the second electrode 122 is preferable because damage to the EL layer 120 can be reduced particularly when the second electrode 122 is formed by a sputtering method.

By providing the electron injection buffer layer 706, an injection barrier between the composite material layer 708 and the electron transport layer 704 can be relaxed, so that electrons generated in the composite material layer 708 can be easily injected into the electron transport layer 704. can do.

An electron relay layer 707 is preferably formed between the electron injection buffer layer 706 and the composite material layer 708. The electron relay layer 707 is not necessarily provided, but by providing the electron relay layer 707 having a high electron transporting property, electrons can be quickly sent to the electron injection buffer layer 706.

The structure in which the electron relay layer 707 is sandwiched between the composite material layer 708 and the electron injection buffer layer 706 includes an acceptor substance contained in the composite material layer 708 and a donor substance contained in the electron injection buffer layer 706. It is a structure that is not easily affected by interaction and that does not easily inhibit each other's functions. Therefore, an increase in drive voltage can be suppressed.

For example, the electron injection buffer layer 706 includes a layer containing a donor substance and an acceptor substance (specifically, an organic compound such as an alkali metal, an alkaline earth metal, a rare earth metal, an alkali metal compound, an alkaline earth metal compound, Alternatively, the electron injection buffer layer 706 can be a highly conductive layer by using a layer to which a rare earth metal compound is added.

Examples of materials that can be used for each layer are shown below.

The hole injection layer 701 is a layer containing a substance having a high hole injection property. Examples of substances having a high hole injection property include molybdenum oxide, titanium oxide, vanadium oxide, rhenium oxide, ruthenium oxide, chromium oxide, zirconium oxide, hafnium oxide, tantalum oxide, and silver oxide. Metal oxides such as oxides, tungsten oxides, and manganese oxides can be used. Alternatively, a phthalocyanine-based compound such as phthalocyanine (abbreviation: H ₂ Pc) or copper (II) phthalocyanine (abbreviation: CuPc) can be used.

In addition, 4,4 ′, 4 ″ -tris (N, N-diphenylamino) triphenylamine (abbreviation: TDATA), 4,4 ′, 4 ″ -tris [N- ( 3-methylphenyl) -N-phenylamino] triphenylamine (abbreviation: MTDATA), 4,4′-bis [N- (4-diphenylaminophenyl) -N-phenylamino] biphenyl (abbreviation: DPAB), 4 , 4′-bis (N- {4- [N ′-(3-methylphenyl) -N′-phenylamino] phenyl} -N-phenylamino) biphenyl (abbreviation: DNTPD), 1,3,5-tris [N- (4-diphenylaminophenyl) -N-phenylamino] benzene (abbreviation: DPA3B), 3- [N- (9-phenylcarbazol-3-yl) -N-phenylamino]- -Phenylcarbazole (abbreviation: PCzPCA1), 3,6-bis [N- (9-phenylcarbazol-3-yl) -N-phenylamino] -9-phenylcarbazole (abbreviation: PCzPCA2), 3- [N- ( An aromatic amine compound such as 1-naphthyl) -N- (9-phenylcarbazol-3-yl) amino] -9-phenylcarbazole (abbreviation: PCzPCN1) can be used.

Furthermore, a high molecular compound (an oligomer, a dendrimer, a polymer, etc.) can also be used. For example, poly (N-vinylcarbazole) (abbreviation: PVK), poly (4-vinyltriphenylamine) (abbreviation: PVTPA), poly [N- (4- {N ′-[4- (4-diphenylamino)] Phenyl] phenyl-N′-phenylamino} phenyl) methacrylamide] (abbreviation: PTPDMA), poly [N, N′-bis (4-butylphenyl) -N, N′-bis (phenyl) benzidine] (abbreviation: Polymer compounds such as Poly-TPD). In addition, a polymer compound to which an acid such as poly (3,4-ethylenedioxythiophene) / poly (styrenesulfonic acid) (PEDOT / PSS), polyaniline / poly (styrenesulfonic acid) (PAni / PSS) is added is used. be able to.

In particular, for the hole-injecting layer 701, a composite material in which an acceptor substance is contained in an organic compound having a high hole-transport property is preferably used. By using a composite material in which an acceptor substance is contained in a substance having a high hole-transport property, hole-injection property from the first electrode 118 can be improved, and the driving voltage of the light-emitting element can be reduced. These composite materials can be formed by co-evaporating a substance having a high hole-transport property and an acceptor substance. By forming the hole injection layer 701 using the composite material, hole injection from the first electrode 118 to the EL layer 120 is facilitated.

As the organic compound used for the composite material, various compounds such as an aromatic amine compound, a carbazole derivative, an aromatic hydrocarbon, and a high molecular compound (such as an oligomer, a dendrimer, and a polymer) can be used. Note that the organic compound used for the composite material is preferably an organic compound having a high hole-transport property. Specifically, a substance having a hole mobility of 10 ⁻⁶ cm ² / Vs or higher is preferable. Note that other than these substances, any substance that has a property of transporting more holes than electrons may be used. Below, the organic compound which can be used for a composite material is listed concretely.

Examples of an organic compound that can be used for the composite material include TDATA, MTDATA, DPAB, DNTPD, DPA3B, PCzPCA1, PCzPCA2, PCzPCN1, 4,4′-bis [N- (1-naphthyl) -N-phenylamino]. Biphenyl (abbreviation: NPB or α-NPD), N, N′-bis (3-methylphenyl) -N, N′-diphenyl- [1,1′-biphenyl] -4,4′-diamine (abbreviation: TPD) ), 4-phenyl-4 ′-(9-phenylfluoren-9-yl) triphenylamine (abbreviation: BPAFLP) and the like, and 4,4′-di (N-carbazolyl) biphenyl (abbreviation: CBP), 1,3,5-tris [4- (N-carbazolyl) phenyl] benzene (abbreviation: TCPB), 9- [4- (10 Phenyl-9-anthryl) phenyl] -9H-carbazole (abbreviation: CzPA), 9-phenyl-3- [4- (10-phenyl-9-anthryl) phenyl] -9H-carbazole (abbreviation: PCzPA), 1, A carbazole derivative such as 4-bis [4- (N-carbazolyl) phenyl] -2,3,5,6-tetraphenylbenzene can be used.

2-tert-butyl-9,10-di (2-naphthyl) anthracene (abbreviation: t-BuDNA), 2-tert-butyl-9,10-di (1-naphthyl) anthracene, 9,10-bis (3,5-diphenylphenyl) anthracene (abbreviation: DPPA), 2-tert-butyl-9,10-bis (4-phenylphenyl) anthracene (abbreviation: t-BuDBA), 9,10-di (2-naphthyl) ) Anthracene (abbreviation: DNA), 9,10-diphenylanthracene (abbreviation: DPAnth), 2-tert-butylanthracene (abbreviation: t-BuAnth), 9,10-bis (4-methyl-1-naphthyl) anthracene ( Abbreviations: DMNA), 9,10-bis [2- (1-naphthyl) phenyl] -2-tert-butylanthracene, 9, 0- bis [2- (1-naphthyl) phenyl] anthracene, and 2,3,6,7-tetramethyl-9,10-di (1-naphthyl) aromatic hydrocarbon compounds such as anthracene.

Further, 2,3,6,7-tetramethyl-9,10-di (2-naphthyl) anthracene, 9,9′-bianthryl, 10,10′-diphenyl-9,9′-bianthryl, 10,10 ′ -Bis (2-phenylphenyl) -9,9'-bianthryl, 10,10'-bis [(2,3,4,5,6-pentaphenyl) phenyl] -9,9'-bianthryl, anthracene, tetracene , Rubrene, perylene, 2,5,8,11-tetra (tert-butyl) perylene, pentacene, coronene, 4,4'-bis (2,2-diphenylvinyl) biphenyl (abbreviation: DPVBi), 9,10- An aromatic hydrocarbon compound such as bis [4- (2,2-diphenylvinyl) phenyl] anthracene (abbreviation: DPVPA) can be used.

Examples of the electron acceptor include organic compounds such as 7,7,8,8-tetracyano-2,3,5,6-tetrafluoroquinodimethane (abbreviation: F ₄ -TCNQ), chloranil, and transition metal oxidation. You can list things. In addition, oxides of metals belonging to Groups 4 to 8 in the periodic table can be given. Specifically, vanadium oxide, niobium oxide, tantalum oxide, chromium oxide, molybdenum oxide, tungsten oxide, manganese oxide, and rhenium oxide are preferable because of their high electron accepting properties. Among these, molybdenum oxide is especially preferable because it is stable in the air, has a low hygroscopic property, and is easy to handle.

Note that a composite material may be formed using the above-described electron acceptor with a polymer compound such as PVK, PVTPA, PTPDMA, or Poly-TPD, and used for the hole-injection layer 701.

The hole-transport layer 702 is a layer that contains a substance having a high hole-transport property. As a substance having a high hole-transport property, for example, NPB, TPD, BPAFLP, 4,4′-bis [N- (9,9-dimethylfluoren-2-yl) -N-phenylamino] biphenyl (abbreviation: DFLDPBi) ), 4,4′-bis [N- (spiro-9,9′-bifluoren-2-yl) -N-phenylamino] biphenyl (abbreviation: BSPB), or the like can be used. The substances described here are mainly substances having a hole mobility of 10 ⁻⁶ cm ² / Vs or higher. Note that other than these substances, any substance that has a property of transporting more holes than electrons may be used. Note that the layer containing a substance having a high hole-transport property is not limited to a single layer, and two or more layers containing the above substances may be stacked.

For the hole-transport layer 702, a carbazole derivative such as CBP, CzPA, or PCzPA, or an anthracene derivative such as t-BuDNA, DNA, or DPAnth may be used.

For the hole-transport layer 702, a high molecular compound such as PVK, PVTPA, PTPDMA, or Poly-TPD can be used.

The light-emitting layer 703 can be formed using a fluorescent compound that emits fluorescence or a phosphorescent compound that emits phosphorescence.

As a fluorescent compound that can be used for the light-emitting layer 703, for example, N, N′-bis [4- (9H-carbazol-9-yl) phenyl] -N, N′-diphenyl can be used as a blue light-emitting material. Stilbene-4,4′-diamine (abbreviation: YGA2S), 4- (9H-carbazol-9-yl) -4 ′-(10-phenyl-9-anthryl) triphenylamine (abbreviation: YGAPA), 4- ( 10-phenyl-9-anthryl) -4 ′-(9-phenyl-9H-carbazol-3-yl) triphenylamine (abbreviation: PCBAPA) and the like. As green light-emitting materials, N- (9,10-diphenyl-2-anthryl) -N, 9-diphenyl-9H-carbazol-3-amine (abbreviation: 2PCAPA), N- [9,10-bis] (1,1′-biphenyl-2-yl) -2-anthryl] -N, 9-diphenyl-9H-carbazol-3-amine (abbreviation: 2PCABPhA), N- (9,10-diphenyl-2-anthryl) -N, N ', N'-triphenyl-1,4-phenylenediamine (abbreviation: 2DPAPA), N- [9,10-bis (1,1'-biphenyl-2-yl) -2-anthryl]- N, N ′, N′-triphenyl-1,4-phenylenediamine (abbreviation: 2DPABPhA), N- [9,10-bis (1,1′-biphenyl-2-yl)]-N- [4- (9H-Cal Tetrazole-9-yl) phenyl] -N- phenyl-anthracene-2-amine (abbreviation: 2YGABPhA), N, N, 9- triphenylamine anthracene-9-amine (abbreviation: DPhAPhA), and the like. In addition, examples of a yellow light-emitting material include rubrene, 5,12-bis (1,1′-biphenyl-4-yl) -6,11-diphenyltetracene (abbreviation: BPT), and the like. As red light-emitting materials, N, N, N ′, N′-tetrakis (4-methylphenyl) tetracene-5,11-diamine (abbreviation: p-mPhTD), 7,14-diphenyl-N, N , N ′, N′-tetrakis (4-methylphenyl) acenaphtho [1,2-a] fluoranthene-3,10-diamine (abbreviation: p-mPhAFD) and the like.

Examples of phosphorescent compounds that can be used for the light-emitting layer 703 include bis [2- (4 ′, 6′-difluorophenyl) pyridinato-N, C ^{2 ′} ] iridium (III) as a blue light-emitting material. ) Tetrakis (1-pyrazolyl) borate (abbreviation: FIr6), bis [2- (4 ′, 6′-difluorophenyl) pyridinato-N, C ^{2 ′} ] iridium (III) picolinate (abbreviation: FIrpic), bis {2 -[3 ′, 5′-bis (trifluoromethyl) phenyl] pyridinato-N, C ^{2 ′} } iridium (III) picolinate (abbreviation: Ir (CF ₃ ppy) ₂ (pic)), bis [2- (4 And ', 6'-difluorophenyl) pyridinato-N, C ^{2 ′} ] iridium (III) acetylacetonate (abbreviation: FIr (acac)). Further, as a green light-emitting material, tris (2-phenylpyridinato-N, C ^{2 ′} ) iridium (III) (abbreviation: Ir (ppy) ₃ ), bis (2-phenylpyridinato-N, C ^{2 ′} ) iridium (III) acetylacetonate (abbreviation: Ir (ppy) ₂ (acac)), bis (1,2-diphenyl-1H-benzimidazolato) iridium (III) acetylacetonate (abbreviation: Ir (pbi) ) ₂ (acac)), bis (benzo [h] quinolinato) iridium (III) acetylacetonate (abbreviation: Ir (bzq) ₂ (acac)), tris (benzo [h] quinolinato) iridium (III) (abbreviation: Ir (bzq) ₃ ) and the like. Further, as yellow light-emitting materials, bis (2,4-diphenyl-1,3-oxazolate-N, C ^{2 ′} ) iridium (III) acetylacetonate (abbreviation: Ir (dpo) ₂ (acac)), bis [2- (4′-perfluorophenylphenyl) pyridinato] iridium (III) acetylacetonate (abbreviation: Ir (p-PF-ph) ₂ (acac)), bis (2-phenylbenzothiazolate-N, C ^{2 ′} ) iridium (III) acetylacetonate (abbreviation: Ir (bt) ₂ (acac)), (acetylacetonato) bis [2,3-bis (4-fluorophenyl) -5-methylpyrazinato] iridium (III ) _{(abbreviation: Ir (Fdppr-Me) 2} (acac)), ( acetylacetonato) bis [2- (4-methoxyphenyl) -3 5- dimethylpyrazole Gina preparative] iridium (III) _{(abbreviation: Ir (dmmoppr) 2 (acac} )) , and the like. As an orange light-emitting material, tris (2-phenylquinolinato-N, C ^{2 ′} ) iridium (III) (abbreviation: Ir (pq) ₃ ), bis (2-phenylquinolinato-N, C ^{2 ′} ) Iridium (III) acetylacetonate (abbreviation: Ir (pq) ₂ (acac)), (acetylacetonato) bis (3,5-dimethyl-2-phenylpyrazinato) iridium (III) (abbreviation: Ir ( mppr-Me) ₂ (acac)), (acetylacetonato) bis (5-isopropyl-3-methyl-2-phenylpyrazinato) iridium (III) (abbreviation: Ir (mppr-iPr) ₂ (acac)) Etc. As a red light-emitting material, bis [2- (2′-benzo [4,5-α] thienyl) pyridinato-N, C ^{3 ′} ] iridium (III) acetylacetonate (abbreviation: Ir (btp) ₂ (Acac)), bis (1-phenylisoquinolinato-N, C ^{2 ′} ) iridium (III) acetylacetonate (abbreviation: Ir (piq) ₂ (acac)), (acetylacetonato) bis [2,3 -Bis (4-fluorophenyl) quinoxalinato] iridium (III) (abbreviation: Ir (Fdpq) ₂ (acac)), (acetylacetonato) bis (2,3,5-triphenylpyrazinato) iridium (III) _{(abbreviation: Ir (tppr) 2 (acac} )), ( dipivaloylmethanato) bis (2,3,5-triphenylpyrazinato) iridium (III) _{Abbreviation: Ir (tppr) 2 (dpm} )), 2,3,7,8,12,13,17,18- octaethyl-21H, 23H-porphyrin platinum (II) (abbreviation: PtOEP) organometallic complexes such as Can be mentioned. In addition, tris (acetylacetonato) (monophenanthroline) terbium (III) (abbreviation: Tb (acac) ₃ (Phen)), tris (1,3-diphenyl-1,3-propanedionate) (monophenanthroline) europium (III) (abbreviation: Eu (DBM) ₃ (Phen)), tris [1- (2-thenoyl) -3,3,3-trifluoroacetonato] (monophenanthroline) europium (III) (abbreviation: Eu ( Since rare earth metal complexes such as TTA) ₃ (Phen)) emit light from rare earth metal ions (electron transition between different multiplicity), they can be used as phosphorescent compounds.

Note that the light-emitting layer 703 may have a structure in which the above-described light-emitting organic compound (guest material) is dispersed in another substance (host material). As the host material, various materials can be used, and a substance having a lowest lowest orbital level (LUMO level) and a lower highest occupied orbital level (HOMO level) than a light-emitting substance should be used. Is preferred.

Specific examples of the host material include tris (8-quinolinolato) aluminum (III) (abbreviation: Alq), tris (4-methyl-8-quinolinolato) aluminum (III) (abbreviation: Almq ₃ ), bis (10 -Hydroxybenzo [h] quinolinato) beryllium (II) (abbreviation: BeBq ₂ ), bis (2-methyl-8-quinolinolato) (4-phenylphenolato) aluminum (III) (abbreviation: BAlq), bis (8- Quinolinolato) zinc (II) (abbreviation: Znq), bis [2- (2-benzoxazolyl) phenolato] zinc (II) (abbreviation: ZnPBO), bis [2- (2-benzothiazolyl) phenolato] zinc (II ) (Abbreviation: ZnBTZ) and the like, 2- (4-biphenylyl) -5- (4-tert-butylphenyl)- 1,3,4-oxadiazole (abbreviation: PBD), 1,3-bis [5- (p-tert-butylphenyl) -1,3,4-oxadiazol-2-yl] benzene (abbreviation: OXD-7), 3- (4-biphenylyl) -4-phenyl-5- (4-tert-butylphenyl) -1,2,4-triazole (abbreviation: TAZ), 2,2 ′, 2 ″- Heterocyclic compounds such as (1,3,5-benzenetriyl) tris (1-phenyl-1H-benzimidazole) (abbreviation: TPBI), bathophenanthroline (abbreviation: BPhen), bathocuproin (abbreviation: BCP), and CzPA DNA, DPPA, t-BuDNA, DPAnth, 3,6-diphenyl-9- [4- (10-phenyl-9-anthryl) phenyl] -9H-carbazole (abbreviation: DPCz) A), 9,9′-bianthryl (abbreviation: BANT), 9,9 ′-(stilbene-3,3′-diyl) diphenanthrene (abbreviation: DPNS), 9,9 ′-(stilbene-4,4 ′ -Diyl) diphenanthrene (abbreviation: DPNS2), 3,3 ', 3''-(benzene-1,3,5-triyl) tripylene (abbreviation: TPB3), 6,12-dimethoxy-5,11-diphenylchrysene Condensed aromatic compounds such as N, N-diphenyl-9- [4- (10-phenyl-9-anthryl) phenyl] -9H-carbazol-3-amine (abbreviation: CzA1PA), 4- (10-phenyl- 9-anthryl) triphenylamine (abbreviation: DPhPA), N, 9-diphenyl-N- [4- (10-phenyl-9-anthryl) phenyl] -9H-carbazol-3-amine (Abbreviation: PCAPA), N, 9-diphenyl-N- {4- [4- (10-phenyl-9-anthryl) phenyl] phenyl} -9H-carbazol-3-amine (abbreviation: PCAPBA), 2PCAPA, NPB (Or α-NPD), aromatic amine compounds such as TPD, DFLDPBi, and BSPB can be used.

A plurality of types of host materials can be used. For example, a substance that suppresses crystallization, such as rubrene, may be further added to suppress crystallization. Further, NPB, Alq, or the like may be further added in order to more efficiently transfer energy to the guest material.

With the structure in which the guest material is dispersed in the host material, crystallization of the light-emitting layer 703 can be suppressed. Further, concentration quenching due to the high concentration of the guest material can be suppressed.

For the light-emitting layer 703, a high molecular compound can be used. Specifically, as a blue light-emitting material, poly (9,9-dioctylfluorene-2,7-diyl) (abbreviation: PFO), poly [(9,9-dioctylfluorene-2,7-diyl)- co- (2,5-dimethoxybenzene-1,4-diyl)] (abbreviation: PF-DMOP), poly {(9,9-dioctylfluorene-2,7-diyl) -co- [N, N′- Di- (p-butylphenyl) -1,4-diaminobenzene]} (abbreviation: TAB-PFH) and the like. As green light-emitting materials, poly (p-phenylene vinylene) (abbreviation: PPV), poly [(9,9-dihexylfluorene-2,7-diyl) -alt-co- (benzo [2,1, 3] thiadiazole-4,7-diyl)] (abbreviation: PFBT), poly [(9,9-dioctyl-2,7-divinylenefluorenylene) -alt-co- (2-methoxy-5- (2 -Ethylhexyloxy) -1,4-phenylene)] and the like. As an orange to red light-emitting material, poly [2-methoxy-5- (2′-ethylhexoxy) -1,4-phenylenevinylene] (abbreviation: MEH-PPV), poly (3-butylthiophene-2, 5-diyl) (abbreviation: R4-PAT), poly {[9,9-dihexyl-2,7-bis (1-cyanovinylene) fluorenylene] -alt-co- [2,5-bis (N, N′- Diphenylamino) -1,4-phenylene]}, poly {[2-methoxy-5- (2-ethylhexyloxy) -1,4-bis (1-cyanovinylenephenylene)]-alt-co- [2, 5-bis (N, N′-diphenylamino) -1,4-phenylene]} (abbreviation: CN-PPV-DPD) and the like.

In addition, by providing a plurality of light-emitting layers and making each layer have a different emission color, light emission of a desired color can be obtained as the entire light-emitting element. For example, in a light-emitting element having two light-emitting layers, a light-emitting element that emits white light as a whole of the light-emitting element by making the light emission color of the first light-emitting layer and the light emission color of the second light-emitting layer complementary It is also possible to obtain The same applies to a light-emitting element having three or more light-emitting layers.

The electron transport layer 704 is a layer containing a substance having a high electron transport property. Examples of the substance having a high electron transporting property include metal complexes having a quinoline skeleton or a benzoquinoline skeleton, such as Alq, Almq ₃ , BeBq ₂ , and BAlq. In addition, metal complexes having an oxazole-based or thiazole-based ligand such as ZnPBO and ZnBTZ can also be used. In addition to metal complexes, PBD, OXD-7, TAZ, BPhen, BCP, and the like can also be used. The substances mentioned here are mainly substances having an electron mobility of 10 ⁻⁶ cm ² / Vs or higher. Further, the electron-transport layer is not limited to a single layer, and two or more layers including the above substances may be stacked.

The electron injection layer 705 is a layer containing a substance having a high electron injection property. For the electron injecting layer 705, an alkali metal such as lithium, cesium, calcium, lithium fluoride, cesium fluoride, calcium fluoride, lithium oxide, or a compound thereof can be used. Alternatively, a rare earth metal compound such as erbium fluoride can be used. Alternatively, a substance that forms the above-described electron transport layer 704 can be used.

Note that the hole injection layer 701, the hole transport layer 702, the light-emitting layer 703, the electron transport layer 704, and the electron injection layer 705 described above are formed by an evaporation method (including a vacuum evaporation method), an inkjet method, a coating method, or the like, respectively. Can be formed by a method.

A charge generation layer 709 illustrated in FIG. 6B can be formed using the above-described composite material. The charge generation layer 709 may have a stacked structure of a layer formed using a composite material and a layer formed using another material. In this case, as a layer made of another material, a layer containing an electron donating substance and a substance having a high electron transporting property, a layer made of a transparent conductive film, or the like can be used.

The composite material layer 708 illustrated in FIG. 6C can be formed using the above-described composite material in which an acceptor substance is contained in an organic compound with a high hole-transport property.

The electron injection buffer layer 706 includes an alkali metal, an alkaline earth metal, a rare earth metal, and a compound thereof (including alkali metal compounds (including oxides such as lithium oxide, halides, and carbonates such as lithium carbonate and cesium carbonate). , Alkaline earth metal compounds (including oxides, halides, carbonates) or rare earth metal compounds (including oxides, halides, carbonates) can be used. It is.

In the case where the electron injection buffer layer 706 is formed to include a substance having a high electron transporting property and a donor substance, the mass ratio with respect to the substance having a high electron transporting property is 0.001 or more and 0.1 or less. It is preferable to add the donor substance at the ratio of As donor substances, alkali metals, alkaline earth metals, rare earth metals, and compounds thereof (alkali metal compounds (including oxides such as lithium oxide, halides, carbonates such as lithium carbonate and cesium carbonate) In addition to alkaline earth metal compounds (including oxides, halides and carbonates) or rare earth metal compounds (including oxides, halides and carbonates), tetrathianaphthacene (abbreviation: TTN), Organic compounds such as nickelocene and decamethyl nickelocene can also be used. Note that the substance having a high electron-transport property can be formed using a material similar to the material for the electron-transport layer 704 described above.

The electron-relay layer 707 includes a substance having a high electron-transport property, and the LUMO level of the substance having a high electron-transport property is included in the LUMO level of the acceptor substance included in the composite material layer 708 and the electron-transport layer 704. It is formed so as to be between the LUMO levels of a substance having a high electron transporting property. In the case where the electron-relay layer 707 includes a donor substance, the donor level of the donor substance is also the LUMO level of the acceptor substance included in the composite material layer 708 and the electron transport included in the electron-transport layer 704. It should be between the LUMO levels of highly-substance substances. As a specific value of the energy level, the LUMO level of a substance having a high electron transporting property included in the electron relay layer 707 is −5.0 eV or more, preferably −5.0 eV or more and −3.0 eV or less. .

As the substance having a high electron-transport property included in the electron-relay layer 707, a phthalocyanine-based material or a metal complex having a metal-oxygen bond and an aromatic ligand is preferably used.

Specific examples of the phthalocyanine-based material included in the electron relay layer 707 include CuPc, SnPc (Phthalogyanine tin (II) complex), ZnPc (Phthalogyanine zinc complex), CoPc (Cobalt (II) phthacamine, β). It is preferable to use any one of (Phthalocyanine Iron) and PhO-VOPc (Vanadyl 2,9,16,23-tetraphenoxy-29H, 31H-phthalocyanine).

As the metal complex having a metal-oxygen bond and an aromatic ligand contained in the electron relay layer 707, a metal complex having a metal-oxygen double bond is preferably used. Since the metal-oxygen double bond has an acceptor property (a property of easily accepting electrons), it becomes easier to transfer (transfer) electrons. A metal complex having a metal-oxygen double bond is considered to be stable. Therefore, by using a metal complex having a metal-oxygen double bond, the light-emitting element can be driven more stably at a low voltage.

As the metal complex having a metal-oxygen bond and an aromatic ligand, a phthalocyanine-based material is preferable. Specifically, any one of VOPc (Vanadyl phthalocyanine), SnOPc (Phthalocyanine tin (IV) oxide complex), and TiOPc (Phthacyanine titanium complex) is a molecular bond of a molecular bond or the like. It is preferable because it acts easily and has high acceptor properties.

In addition, as a phthalocyanine-type material mentioned above, what has a phenoxy group is preferable. Specifically, a phthalocyanine derivative having a phenoxy group, such as PhO-VOPc, is preferable. A phthalocyanine derivative having a phenoxy group is soluble in a solvent. Therefore, it has an advantage that it is easy to handle in forming a light emitting element. Further, since it is soluble in a solvent, there is an advantage that maintenance of an apparatus used for film formation becomes easy.

The electron relay layer 707 may further contain a donor substance. Donor substances include alkali metals, alkaline earth metals, rare earth metals and their compounds (including alkali metal compounds (including oxides and halides such as lithium oxide, carbonates such as lithium carbonate and cesium carbonate), alkaline earths In addition to metal compounds (including oxides, halides, carbonates) or rare earth metal compounds (including oxides, halides, carbonates), tetrathianaphthacene (abbreviation: TTN), nickelocene, deca An organic compound such as methylnickelocene can be used. By including these donor substances in the electron relay layer 707, the movement of electrons becomes easy, and the light-emitting element can be driven at a lower voltage.

In the case where the electron-relay layer 707 includes a donor substance, examples of the substance having a high electron-transport property include a substance having a LUMO level higher than the acceptor level of the acceptor substance included in the composite material layer 708 as the above-described material. Can be used. As a specific energy level, it is preferable to use a substance having an LUMO level in a range of −5.0 eV or more, preferably −5.0 eV or more and −3.0 eV or less. Examples of such substances include perylene derivatives and nitrogen-containing condensed aromatic compounds. Note that a nitrogen-containing condensed aromatic compound is a preferable material as a material used for forming the electron relay layer 707 because it is stable.

Specific examples of the perylene derivative include 3,4,9,10-perylenetetracarboxylic dianhydride (abbreviation: PTCDA), 3,4,9,10-perylenetetracarboxylic bisbenzimidazole (abbreviation: PTCBI), N, N′-dioctyl-3,4,9,10-perylenetetracarboxylic acid diimide (abbreviation: PTCDI-C8H), N, N′-dihexyl-3,4,9,10-perylenetetracarboxylic acid diimide (abbreviation) : Hex PTC).

Specific examples of the nitrogen-containing condensed aromatic compound include pyrazino [2,3-f] [1,10] phenanthroline-2,3-dicarbonitrile (abbreviation: PPDN), 2,3,6,7, 10,11-hexacyano-1,4,5,8,9,12-hexaazatriphenylene (abbreviation: HAT (CN) ₆ ), 2,3-diphenylpyrido [2,3-b] pyrazine (abbreviation: 2PYPR) ), 2,3-bis (4-fluorophenyl) pyrido [2,3-b] pyrazine (abbreviation: F2PYPR), and the like.

In addition, 7,7,8,8-tetracyanoquinodimethane (abbreviation: TCNQ), 1,4,5,8-naphthalenetetracarboxylic dianhydride (abbreviation: NTCDA), perfluoropentacene, copper hexa Decafluorophthalocyanine (abbreviation: F ₁₆ CuPc), N, N′-bis (2,2,3,3,4,4,5,5,6,6,7,7,8,8,8-pentadeca Fluorooctyl) -1,4,5,8-naphthalenetetracarboxylic acid diimide (abbreviation: NTCDI-C8F), 3 ′, 4′-dibutyl-5,5 ″ -bis (dicyanomethylene) -5,5 ″ - dihydro-2,2 ': 5', 2 '' - terthiophene (abbreviation: DCMT), methanofullerene (e.g., [6,6] - phenyl _{C 61} butyric acid methyl ester), or the like can be used.

Note that in the case where the electron-relay layer 707 includes a donor substance, the electron-relay layer 707 may be formed by a method such as co-evaporation of a substance having a high electron-transport property and a donor substance.

Through the above steps, the EL layer of this embodiment can be manufactured.

This embodiment can be freely combined with any of the other embodiments.

(Embodiment 5)
In this embodiment, examples of various electronic devices and lighting devices completed using the light-emitting device of one embodiment of the present invention will be described with reference to FIGS.

As electronic devices to which the light-emitting device is applied, for example, a television set (also referred to as a television or a television receiver), a monitor for a computer, a digital camera, a digital video camera, a digital photo frame, a mobile phone (a mobile phone, a mobile phone) Also referred to as a telephone device), portable game machines, portable information terminals, sound reproduction devices, large game machines such as pachinko machines, and the like. Specific examples of these electronic devices and lighting fixtures are shown in FIGS.

FIG. 7A illustrates an example of a television device. In the television device 7100, a display portion 7103 is incorporated in a housing 7101. Images can be displayed on the display portion 7103, and a light-emitting device can be used for the display portion 7103. Here, a structure in which the housing 7101 is supported by a stand 7105 is shown.

The television device 7100 can be operated with an operation switch included in the housing 7101 or a separate remote controller 7110. Channels and volume can be operated with an operation key 7109 provided in the remote controller 7110, and an image displayed on the display portion 7103 can be operated. The remote controller 7110 may be provided with a display portion 7107 for displaying information output from the remote controller 7110.

Note that the television device 7100 is provided with a receiver, a modem, and the like. General TV broadcasts can be received by a receiver, and connected to a wired or wireless communication network via a modem, so that it can be unidirectional (sender to receiver) or bidirectional (sender and receiver). It is also possible to perform information communication between each other or between recipients).

FIG. 7B illustrates a computer, which includes a main body 7201, a housing 7202, a display portion 7203, a keyboard 7204, an external connection port 7205, a pointing device 7206, and the like. Note that the computer is manufactured by using the light-emitting device for the display portion 7203.

FIG. 7C illustrates a portable game machine which includes two housings, a housing 7301 and a housing 7302, which are connected with a joint portion 7303 so that the portable game machine can be opened or folded. A display portion 7304 is incorporated in the housing 7301 and a display portion 7305 is incorporated in the housing 7302. In addition, the portable game machine shown in FIG. 7C includes a speaker portion 7306, a recording medium insertion portion 7307, an LED lamp 7308, input means (operation keys 7309, a connection terminal 7310, a sensor 7311 (force, displacement, position). , Speed, acceleration, angular velocity, number of revolutions, distance, light, liquid, magnetism, temperature, chemical, sound, time, hardness, electric field, current, voltage, power, radiation, flow rate, humidity, gradient, vibration, smell or infrared A microphone 7312) and the like. Needless to say, the structure of the portable game machine is not limited to the above, and a light-emitting device may be used at least for one or both of the display portion 7304 and the display portion 7305, and other accessory facilities may be provided as appropriate. can do. The portable game machine shown in FIG. 7C shares information by reading a program or data recorded in a recording medium and displaying the program or data on a display unit, or by performing wireless communication with another portable game machine. It has a function. Note that the portable game machine illustrated in FIG. 7C is not limited to this, and can have a variety of functions.

FIG. 7D illustrates an example of a mobile phone. A mobile phone 7400 is provided with a display portion 7402 incorporated in a housing 7401, operation buttons 7403, an external connection port 7404, a speaker 7405, a microphone 7406, and the like. Note that the cellular phone 7400 is manufactured using the light-emitting device for the display portion 7402.

Information can be input to the cellular phone 7400 illustrated in FIG. 7D by touching the display portion 7402 with a finger or the like. In addition, operations such as making a call or creating a mail can be performed by touching the display portion 7402 with a finger or the like.

There are mainly three screen modes of the display portion 7402. The first mode is a display mode mainly for displaying an image. The first is a display mode mainly for displaying images, and the second is an input mode mainly for inputting information such as characters. The third is a display + input mode in which the display mode and the input mode are mixed.

For example, when making a call or creating a mail, the display portion 7402 may be set to a character input mode mainly for inputting characters, and an operation for inputting characters displayed on the screen may be performed. In this case, it is preferable to display a keyboard or number buttons on most of the screen of the display portion 7402.

In addition, by providing a detection device having a sensor for detecting inclination, such as a gyroscope or an acceleration sensor, in the mobile phone 7400, the orientation (vertical or horizontal) of the mobile phone 7400 is determined, and the screen display of the display portion 7402 is displayed. Can be switched automatically.

Further, the screen mode is switched by touching the display portion 7402 or operating the operation button 7403 of the housing 7401. Further, switching can be performed depending on the type of image displayed on the display portion 7402. For example, if the image signal to be displayed on the display unit is moving image data, the mode is switched to the display mode.

Further, in the input mode, when a signal detected by the optical sensor of the display unit 7402 is detected and there is no input by a touch operation of the display unit 7402 for a certain period, the screen mode is switched from the input mode to the display mode. You may control.

The display portion 7402 can function as an image sensor. For example, personal authentication can be performed by touching the display portion 7402 with a palm or a finger and capturing an image of a palm print, a fingerprint, or the like. In addition, if a backlight that emits near-infrared light or a sensing light source that emits near-infrared light is used for the display portion, finger veins, palm veins, and the like can be imaged.

FIG. 7E illustrates a table lamp, which includes a lighting unit 7501, an umbrella 7502, a variable arm 7503, a column 7504, a base 7505, and a power source 7506. Note that the desk lamp is manufactured by using a light-emitting device for the lighting portion 7501. Note that the lighting fixture includes a ceiling-fixed lighting fixture or a wall-mounted lighting fixture.

FIG. 8 illustrates an example in which the light-emitting device is used as an indoor lighting device 811. Since the light-emitting device can have a large area, the light-emitting device can be used as a large-area lighting device. In addition, it can also be used as a roll-type lighting device 812. Note that as illustrated in FIG. 8, the desk lamp 813 described with reference to FIG. 7E may be used in a room provided with an indoor lighting device 811.

As described above, an electronic device or a lighting fixture can be obtained by using the light-emitting device. The application range of the light-emitting device is extremely wide and can be applied to electronic devices in various fields.

Note that the structure described in this embodiment can be combined with any of the structures described in the above embodiments as appropriate.

In this embodiment, an image display device to which one embodiment of the present invention is applied will be described with reference to FIGS. Note that in the image display device of this embodiment, the top surface shape of the partition wall and the positional relationship between the light emitting units correspond to the configuration in FIG.

<Method for Manufacturing Image Display Device of this Example>
First, as a substrate heat treatment, a glass substrate 200 (trade name AN100 manufactured by Asahi Glass Co., Ltd.) was heated at 650 ° C.

Next, the base layer 204 was formed on the glass substrate 200. The base layer 204 is formed of a multilayer film in which a silicon nitride film with a thickness of 100 nm and a silicon oxynitride film with a thickness of 150 nm are stacked using a CVD method.

Next, the gate electrode 206 was formed over the base layer 204. The gate electrode 206 is formed of a multilayer film in which a tantalum nitride film with a thickness of 30 nm, a copper film with a thickness of 200 nm, and a tungsten film with a thickness of 30 nm are stacked.

Next, the gate insulating layer 208 was formed over the gate electrode 206. The gate insulating layer 208 is formed of a multilayer film in which a silicon nitride film with a thickness of 50 nm and a silicon oxynitride film with a thickness of 270 nm are stacked using a CVD method.

Then, a semiconductor layer 210 was formed over the gate insulating layer 208. As the semiconductor layer 210, an In—Ga—Zn-based oxide film with a thickness of 35 nm formed by a sputtering method was used. The In—Ga—Zn-based oxide film was formed using an In—Ga—Zn-based oxide target with an atomic ratio of In: Ga: Zn = 1: 1: 1. The film forming conditions were an oxygen and argon atmosphere (oxygen flow rate ratio 50%), a pressure of 0.6 Pa, a power source power of 5 kW, and a substrate temperature of 200 ° C.

After the semiconductor layer 210 was formed, heat treatment was performed at 450 ° C. for 1 hour in a nitrogen atmosphere, and then heat treatment was performed at 450 ° C. for 1 hour in a nitrogen and oxygen atmosphere (oxygen flow rate ratio 50%).

Next, the source electrode 212a and the drain electrode 212b were formed. The source electrode 212a and the drain electrode 212b are each formed of a multilayer film in which a tungsten film with a thickness of 50 nm, an aluminum film with a thickness of 400 nm, and a titanium film with a thickness of 100 nm are stacked.

After the source electrode 212a and the drain electrode 212b were formed, heat treatment was performed at 300 ° C. for 1 hour in an oxygen atmosphere.

Next, a first film is formed of a multilayer film in which a silicon oxide film having a thickness of 400 nm formed using a sputtering method and a silicon nitride oxide film having a thickness of 200 nm formed using a CVD method are stacked. The interlayer insulating layer 213 was provided, and heat treatment was performed at 300 ° C. for 1 hour in an oxygen atmosphere.

Then, a second interlayer insulating layer 214 made of a polyimide film with a thickness of 1.5 μm formed using a spin coater was formed, and heat treatment was performed at 300 ° C. for 1 hour in an oxygen atmosphere.

Next, a conductive layer 215 was formed over the second interlayer insulating layer 214. The conductive layer 215 is formed using a multilayer film in which a 100-nm-thick titanium film, a 400-nm-thick aluminum film, and a 100-nm-thick titanium film are stacked using a sputtering method.

Thereafter, a third interlayer insulating film 216 made of a polyimide film with a thickness of 1.5 μm formed using a spin coater was formed, and heat treatment was performed at 270 ° C. for 1 hour in an oxygen atmosphere.

Then, the first electrode 218 of the light emitting element was formed over the third interlayer insulating film 216. The first electrode 218 is formed of a multilayer film in which a titanium film with a thickness of 50 nm, an aluminum film with a thickness of 200 nm, and a titanium film with a thickness of 8 nm are stacked.

The light-emitting element includes a microcavity structure (not shown) made of indium tin oxide containing silicon (ITSO) on the first electrode 218. The image display apparatus according to the present embodiment includes three color pixels, a red pixel (R), a green pixel (G), and a blue pixel (B). Here, an ITSO film having a thickness of 80 nm was formed on the red pixel (R), and an ITSO film having a thickness of 40 nm was formed on the green pixel (G). Note that the ITSO film was not formed on the blue pixel (B) (that is, the ITSO film in the blue pixel had a thickness of 0 nm).

Next, an insulating layer 224 that covers an end portion of the first electrode 218 was formed. As the insulating layer 224, a polyimide film having a thickness of 1.5 μm was formed using a spin coater. Thereafter, heat treatment was performed at 250 ° C. for 1 hour in an oxygen atmosphere. The width of the insulating layer 224 was 12 μm (see the width L1 in FIG. 11A).

Next, a partition wall 250 made of a photosensitive polyimide resin was formed on the insulating layer 224. The width of the partition wall 250 was 5 μm (see the width L2 in FIG. 11A), the length was 70 μm, and the height (thickness) was 1.5 μm.

FIG. 10 shows an example of a cross-sectional view of the image display device of this embodiment at this time.

In addition, FIG. 11A shows a cross-sectional photograph of the image display apparatus of this example at this time point with a scanning transmission electron microscope (STEM).

Then, an EL layer 220 was formed by a vapor deposition method. The structure of the EL layer 220 is shown in FIG. The structural formula of the material used in this example is shown below.

As pretreatment for forming the EL layer 220, the substrate surface was washed and then dried at 150 ° C. for 1 hour under reduced pressure.

First, the first hole is formed by co-evaporation of 9-phenyl-3- [4- (10-phenyl-9-anthryl) phenyl] -9H-carbazole (abbreviation: PCzPA) and molybdenum oxide (VI). An injection layer 301a was formed. The film thickness was 10 nm, and the ratio of PCzPA to molybdenum oxide was adjusted to be 2: 1 (= PCzPA: molybdenum oxide) by mass ratio. Note that the co-evaporation method is an evaporation method in which evaporation is performed simultaneously from a plurality of evaporation sources in one processing chamber.

Next, a PCzPA film was formed to a thickness of 20 nm on the first hole-injection layer 301a to form a first hole-transport layer 302a.

Next, on the first hole-transport layer 302a, 9- [4- (10-phenyl-9-anthryl) phenyl] -9H-carbazole (abbreviation: CzPA), N, N′-bis (3- By co-evaporation of (methylphenyl) -N, N′-bis [3- (9-phenyl-9H-fluoren-9-yl) phenyl] -pyrene-1,6-diamine (abbreviation: 1,6 mMemFLPAPrn) A blue light emitting layer 303a was formed. The film thickness was 30 nm, and the ratio of CzPA to 1,6mMemFLPAPrn was adjusted to be 9: 1 (CzPA: 1,6mMemFLPAPrn) by mass ratio.

Next, a CzPA film is formed to a thickness of 10 nm over the blue light-emitting layer 303a, and a bathophenanthroline (abbreviation: BPhen) film is formed to a thickness of 10 nm, thereby forming the first electrons. A transport layer 304a was formed.

Next, lithium (Li) is vapor-deposited on the first electron-transport layer 304a so as to have a film thickness of 0.2 nm, and copper phthalocyanine (abbreviation: CuPc) is vapor-deposited so as to have a film thickness of 2 nm. Thus, the intermediate layer 305 was formed.

Next, on the intermediate layer 305, PCzPA and molybdenum oxide (VI) were co-evaporated to form the second hole injection layer 301b. The film thickness was 10 nm, and the ratio of PCzPA to molybdenum oxide was adjusted to be 2: 1 (= PCzPA: molybdenum oxide) by mass ratio.

Next, 4-phenyl-4 ′-(9-phenylfluoren-9-yl) triphenylamine (abbreviation: BPAFLP) is formed to a thickness of 20 nm over the second hole injection layer 301b. Then, the second hole transport layer 302b was formed.

Next, 2- [3- (dibenzothiophen-4-yl) phenyl] dibenzo [f, h] quinoxaline (abbreviation: 2mDBTPDBq-II), 4-phenyl-4 ′-(9-phenyl-9H-carbazole-3) -Yl) triphenylamine (abbreviation: PCBA1BP) and (acetylacetonato) bis (6-tert-butyl-4-phenylpyrimidinato) iridium (III) (abbreviation: [Ir (tBupppm) ₂ (acac)] ) Was co-evaporated to form a green light emitting layer 303b on the second hole transport layer 302b. Here, the mass ratio of 2mDBTPDBq-II, PCBA1BP, and [Ir (tBupppm) ₂ (acac)] is 0.74: 0.18: 0.08 (= 2mDBTPDBq-II: PCBA1BP: [Ir (tBupppm) ₂ (Acac)]). The film thickness of the green light emitting layer 303b was 20 nm.

Further, 2mDBTPDBq-II and (dipivaloylmethanato) bis (2,3,5-triphenylpyrazinato) iridium (III) (abbreviation: [Ir (tppr) ₂ (dpm)]) were co-evaporated. A red light emitting layer 303c was formed on the green light emitting layer 303b. Here, the mass ratio of 2mDBTPDBq-II and [Ir (tppr) ₂ (dpm)] is 0.94: 0.06 (= 2mDBTPDBq-II: [Ir (tppr) ₂ (dpm)]). Adjusted. The red light emitting layer 303c has a thickness of 20 nm.

Next, 2mDBTPDBq-II is formed to a thickness of 15 nm on the red light-emitting layer 303c, and further BPhen is formed to a thickness of 20 nm, whereby the second electron transport layer 304b is formed. Formed.

Next, the electron injection layer 306 was formed by vapor-depositing lithium fluoride (LiF) to a thickness of 1 nm on the second electron transport layer 304b.

Then, magnesium (Mg) and silver (Ag) are co-evaporated to form a film having a thickness of 15 nm, and ITO is further formed to a film thickness of 70 nm. An electrode 222 was formed. The ratio of Mg and Ag was adjusted to be 1:10 (= Mg: Ag) by mass ratio.

Thus, a light emitting element was formed. Note that as described above, the EL layer 220 included in each pixel has the same configuration, but due to the microcavity structure, the light emitting element of the red pixel emits red light and the light emitting element of the green pixel emits green light. The light emitting element of the blue pixel emits blue light.

Further, an ultraviolet light curable resin (XNR5516Z, manufactured by Nagase ChemteX Corporation) was applied as a sealing material to a glass substrate (trade name: AN100 manufactured by Asahi Glass Co., Ltd.) provided with a color filter, which is a counter substrate.

And the glass substrate 200 and the glass substrate provided with the color filter were bonded together. The lamination was performed by applying a pressure of 100 to 20000 Pa.

And the sealing material was hardened by irradiating with a high pressure mercury lamp for 1 minute.

Thereafter, heat treatment was performed at 80 ° C. for 1 hour in a clean oven.

Finally, the image display apparatus of the present example was obtained by dividing with a scribe machine. Specifically, four image display devices manufactured by the above manufacturing method were obtained.

Through the above, an image display device to which one embodiment of the present invention was applied was manufactured.

FIG. 11B shows a photograph at the time of light emission of one light emitting unit included in the image display device of this example. As shown in FIG. 11B, light emission of the light emitting unit was confirmed.

In this embodiment, an image display device to which one embodiment of the present invention is applied will be described with reference to FIGS.

(Configuration and manufacturing method of image display device)
A structure and a manufacturing method of an image display device (configuration example) to which one embodiment of the present invention is applied and an image display device (comparative example) to which one embodiment of the present invention is not applied are described.

First, a lower electrode of a light emitting element was formed over a supporting substrate provided with a transistor. The lower electrode is formed of a multilayer film in which an aluminum-nickel alloy film containing lanthanum having a thickness of 200 nm and a titanium film having a thickness of 6 nm are stacked.

Note that the transistors included in the configuration example and the comparative example have the same configuration. Specifically, a transistor using a single crystal silicon film as a semiconductor layer is provided.

The light emitting device has a microcavity structure made of indium tin oxide containing silicon (ITSO) on the lower electrode. The configuration example and the comparative example include three color pixels, a red pixel (R), a green pixel (G), and a blue pixel (B). In the configuration example, the red pixel (R) has an ITSO film with a thickness of 80 nm, and the green pixel (G) has an ITSO film with a thickness of 40 nm. In the comparative example, the red pixel (R) includes an ITSO film having a thickness of 90 nm, and the green pixel (G) includes an ITSO film having a thickness of 45 nm. In the configuration example and the comparative example, the ITSO film was not formed on the blue pixel (B) (that is, the ITSO film in the blue pixel had a thickness of 0 nm).

Next, an insulating layer covering the end of the lower electrode was formed. In the configuration example, a 1.8 μm-thick polyimide layer was formed as the insulating layer. In the comparative example, a polyimide layer having a thickness of 1.5 μm was formed as the insulating layer.

Next, only in the configuration example, a partition wall having a thickness of 1.5 μm was formed on the insulating layer. A negative resist (ZNP2464 manufactured by Nippon Zeon Co., Ltd.) was used for the partition walls.

Here, top views of a plurality of light emitting units 401 in the configuration example and the comparative example are shown in FIGS. FIG. 13A illustrates a structural example, in which a partition 405 is provided over the insulating layer 403. FIG. 13B is a comparative example, and the partition 405 is not provided over the insulating layer 403.

13A and 13B, the short side length L3 of the light emitting unit 401 is 13.5 μm, and the long side length L4 is 50.5 μm. 13A and 13B, the widths L5 and L6 between adjacent light emitting units 401 are each 5 μm. In FIG. 13A, the length of the long side of the partition 405 is equal to the length L4 of the long side of the light emitting unit 401, and is 50.5 μm, and the length L7 of the short side is 3 μm.

Then, an EL layer 220 was formed. The structure of the EL layer 220 is shown in FIG. Note that the first electrode 218 corresponds to the above-described lower electrode, and the second electrode 222 corresponds to an upper electrode described later. Since the material used for the EL layer 220 is the material used in the previous embodiment, the structural formula is omitted. Hereinafter, a method for manufacturing the EL layer 220 will be described in detail.

First, the first hole injection layer 301a was formed by co-evaporation of PCzPA and molybdenum oxide (VI). The film thickness was 20 nm, and the ratio of PCzPA to molybdenum oxide was adjusted to be 2: 1 (= PCzPA: molybdenum oxide) by mass ratio.

Next, a PCzPA film was formed to a thickness of 20 nm on the first hole-injection layer 301a to form a first hole-transport layer 302a.

Next, CzPA and 1,6 mM emFLPAPrn were co-evaporated on the first hole transport layer 302a to form the blue light-emitting layer 303a. The film thickness was 30 nm, and the ratio of CzPA to 1,6 mM emFLPAPrn was adjusted to be 1: 0.05 (CzPA: 1,6 mM emFLPAPrn) by mass ratio.

Next, CzPA was deposited to a thickness of 5 nm on the blue light-emitting layer 303a, and BPhen was deposited to a thickness of 15 nm, thereby forming the first electron transport layer 304a. .

Next, on the first electron transporting layer 304a, lithium oxide was vapor-deposited to a thickness of 0.1 nm, and CuPc was vapor-deposited to a thickness of 2 nm, thereby forming the intermediate layer 305. .

Next, on the intermediate layer 305, PCzPA and molybdenum oxide (VI) were co-evaporated to form the second hole injection layer 301b. The film thickness was 20 nm, and the ratio of PCzPA to molybdenum oxide was adjusted to be 2: 1 (= PCzPA: molybdenum oxide) by mass ratio.

Next, BPAFLP was deposited to a thickness of 20 nm on the second hole-injection layer 301b to form a second hole-transport layer 302b.

Next, 2mDBTPDBq-II, PCBA1BP, and [Ir (tBupppm) ₂ (acac)] were co-evaporated to form a green light-emitting layer 303b over the second hole-transport layer 302b. Here, the mass ratio of 2mDBTPDBq-II, PCBA1BP, and [Ir (tBupppm) ₂ (acac)] is 0.8: 0.2: 0.06 (= 2mDBTPDBq-II: PCBA1BP: [Ir (tBupppm) ₂ (Acac)]). The film thickness of the green light emitting layer 303b was 20 nm.

Further, 2mDBTPDBq-II and [Ir (tppr) ₂ (dpm)] were co-evaporated to form a red light emitting layer 303c on the green light emitting layer 303b. Here, the weight ratio of 2mDBTPDBq-II, and _{[Ir (tppr) 2 (dpm} )] is 1: 0.06: adjusted such that _{(= 2mDBTPDBq-II [Ir (} tppr) 2 (dpm)]) did. The red light emitting layer 303c has a thickness of 20 nm.

Next, 2mDBTPDBq-II is formed to a thickness of 15 nm on the red light-emitting layer 303c, and BPhen is formed to a thickness of 15 nm, whereby the second electron transport layer 304b is formed. Formed.

Next, an electron injection layer 306 was formed by vapor-depositing LiF to a thickness of 1 nm on the second electron transport layer 304b.

Then, a second electrode 222 which is an upper electrode was formed over the EL layer. The upper electrode is composed of a multilayer film in which a magnesium-silver alloy film having a thickness of 15 nm and an ITO film having a thickness of 70 nm are laminated.

Thus, a light emitting element was formed.

Next, the supporting substrate and the counter substrate provided with the color filter were bonded together using a sealing material.

As described above, configuration examples and comparative examples were produced.

FIG. 14A shows a cross-sectional photograph of an insulating layer and a partition provided in the structure example. The EL layer is divided at a portion indicated by a dotted line in FIG. FIG. 14B shows a cross-sectional photograph of the insulating layer included in the comparative example. In FIG. 14B, there is no portion where the EL layer is divided.

FIG. 15 shows a photograph when the blue pixel in the configuration example is caused to emit light. FIG. 15 (A) is a photograph in the case the luminance is 5 cd / ^{m 2,} FIG. 15 (B) is a photograph in the case the brightness is 150 cd / ^{m 2.} FIG. 16 shows a photograph when the blue pixel of the comparative example is caused to emit light. FIG. 16 (A) brightness is a photograph in the case of 5 cd / ^{m 2,} FIG. 16 (B) is a photograph in the case the brightness is 150 cd / ^{m 2.}

As shown in FIG. 16, in the comparative example, it can be seen that not only blue pixels but also red pixels and green pixels emit light. On the other hand, as shown in FIG. 15, in the configuration example, only blue pixels emit light. Further, in FIG. 15, no light emission failure of the blue pixel was observed.

From the result of this example, by providing a reverse-tapered partition between adjacent light emitting units exhibiting different colors, the EL layer (at least a highly conductive layer) is divided by the partition between the light emitting units. It was shown that unintentional light emission of the light emitting element in the non-light emitting state can be suppressed. In addition, it has been shown that a light emission failure due to a potential drop due to the resistance of the upper electrode can be suppressed between adjacent light emitting units exhibiting the same color.

(Reference example)
A method for synthesizing (acetylacetonato) bis (6-tert-butyl-4-phenylpyrimidinato) iridium (III) (abbreviation: [Ir (tBupppm) ₂ (acac)]) used in the above examples will be described. .

[Step 1; Synthesis of 4-tert-butyl-6-phenylpyrimidine (abbreviation: HtBupppm)]
The synthesis scheme of Step 1 is shown in (a-1).

First, 22.5 g of 4,4-dimethyl-1-phenylpentane-1,3-dione and 50 g of formamide were placed in an eggplant flask equipped with a reflux tube, and the interior was purged with nitrogen. The reaction solution was refluxed for 5 hours by heating the reaction vessel. Thereafter, this solution was poured into an aqueous sodium hydroxide solution, and the organic layer was extracted with dichloromethane. The obtained organic layer was washed with water and saturated brine, and dried over magnesium sulfate. The solution after drying was filtered. After the solvent of this solution was distilled off, the resulting residue was purified by silica gel column chromatography using hexane: ethyl acetate = 10: 1 (volume ratio) as a developing solvent to obtain a pyrimidine derivative HtBupppm (colorless oil) Product, yield 14%).

[Step 2; Synthesis of di-μ-chloro-bis [bis (6-tert-butyl-4-phenylpyrimidinato) iridium (III)] (abbreviation: [Ir (tBupppm) ₂ Cl] ₂ )]
The synthesis scheme of Step 2 is shown in (a-2).

Next, 15 mL of 2-ethoxyethanol and 5 mL of water, 1.49 g of HtBupppm obtained in Step 1 above, and 1.04 g of iridium chloride hydrate (IrCl ₃ · H ₂ O) were placed in an eggplant flask equipped with a reflux tube, The flask was purged with argon. Then, the microwave (2.45 GHz 100W) was irradiated for 1 hour, and was made to react. After the solvent was distilled off, the resulting residue was suction filtered and washed with ethanol to obtain a binuclear complex [Ir (tBupppm) ₂ Cl] ₂ (yellow green powder, yield 73%).

[Step 3; Synthesis of [Ir (tBupppm) ₂ (acac)]]
The synthesis scheme of Step 3 is shown in (a-3).

Further, 40 mL of 2-ethoxyethanol, 1.61 g of the binuclear complex [Ir (tBupppm) ₂ Cl] ₂ obtained in Step 2 above, 0.36 g of acetylacetone, and 1.27 g of sodium carbonate were placed in an eggplant flask equipped with a reflux tube. The inside of the flask was replaced with argon. Then, the microwave (2.45 GHz 120W) was irradiated for 60 minutes, and it was made to react. The solvent was distilled off, and the resulting residue was suction filtered with ethanol and washed with water and ethanol. This solid was dissolved in dichloromethane, and filtered through a filter aid in which Celite (Wako Pure Chemical Industries, Ltd., catalog number: 531-16855), alumina, and Celite were laminated in this order. The solid obtained by distilling off the solvent was recrystallized with a mixed solvent of dichloromethane and hexane to obtain the desired product as a yellow powder (yield 68%).

The analysis result by nuclear magnetic resonance spectroscopy ( ¹ H-NMR) of the yellow powder obtained in Step 3 is shown below. From this result, it was found that [Ir (tBupppm) ₂ (acac)] was obtained in this synthesis example.

¹ H-NMR. δ (CDCl ₃ ): 1.50 (s, 18H), 1.79 (s, 6H), 5.26 (s, 1H), 6.33 (d, 2H), 6.77 (t, 2H) 6.85 (t, 2H), 7.70 (d, 2H), 7.76 (s, 2H), 9.02 (s, 2H).

100 Insulating surface 104 Insulating layer 106 Gate electrode 108 Gate insulating layer 110 Semiconductor layer 112a Source electrode layer 112b Drain electrode layer 114 Insulating layer 116 Insulating layer 118 First electrode 120 EL layer 120a EL layer 120b EL layer 122 Second electrode 124 Insulating layer 130 Light-emitting element 140 Transistor 150 Bulkhead 150a Leg 150b Base 151 Bulkhead 152 Transistor 153 Transistor 160B Light-emitting unit 160G Light-emitting unit 160R Light-emitting unit 161B Light-emitting unit 161G Light-emitting unit 161R Light-emitting unit 164 Black matrix 166 Color filter 168 Overcoat 169 Sealing Stop region 170 Common wiring 200 Glass substrate 204 Underlayer 206 Gate electrode 208 Gate insulating layer 210 Semiconductor layer 212a Source power Electrode 212b Drain electrode 213 First interlayer insulating layer 214 Second interlayer insulating layer 215 Conductive layer 216 Third interlayer insulating film 218 First electrode 220 EL layer 222 Second electrode 224 Insulating layer 250 Partition wall 301a First Hole injection layer 301b Second hole injection layer 302a First hole transport layer 302b Second hole transport layer 303a Blue light emitting layer 303b Green light emitting layer 303c Red light emitting layer 304a First electron transport layer 304b Second Electron transport layer 305 intermediate layer 401 light emitting unit 403 insulating layer 405 partition wall 306 electron injection layer 701 hole injection layer 702 hole transport layer 703 light emission layer 704 electron transport layer 705 electron injection layer 706 electron injection buffer layer 707 electron relay layer 708 Composite material layer 709 Charge generation layer 801 Substrate 802 Light emitting unit 803 Drive circuit unit 804 Drive circuit unit 80 5 Fixing portion 806 Substrate 807 Contact portion 811 Illuminating device 812 Illuminating device 813 Desktop lighting fixture 7100 Television apparatus 7101 Case 7103 Display portion 7105 Stand 7107 Display portion 7109 Operation key 7110 Remote control device 7201 Main body 7202 Case 7203 Display portion 7204 Keyboard 7205 External connection port 7206 Pointing device 7301 Case 7302 Case 7303 Connection portion 7304 Display portion 7305 Display portion 7306 Speaker portion 7307 Recording medium insertion portion 7308 LED lamp 7309 Operation key 7310 Connection terminal 7311 Sensor 7312 Microphone 7400 Mobile phone 7401 Case 7402 Display portion 7403 Operation button 7404 External connection port 7405 Speaker 7406 Microphone 7501 Illumination portion 7502 Umbrella 7503 Variable arm 7504 Post 7505 Stand 7506 Power supply

Claims (9)

An active matrix light emitting device,
A plurality of light emitting units arranged in a matrix form each provided with a light emitting element having a layer containing an organic compound between the first electrode and the second electrode,
The first electrode is divided for each light emitting element,
The layer containing an organic compound includes a layer containing a light emitting substance, and a layer containing a donor substance and an acceptor substance provided between the first electrode and the layer containing the light emitting substance,
Only between the adjacent light emitting units exhibiting different colors, has a reverse-tapered partition,
The reverse tapered partition is divided at least for each light emitting unit ,
The light emitting device in which the second electrode is electrically connected between the adjacent light emitting units having different colors in a portion without the reverse tapered partition for each light emitting unit. In claim 1,
Having a first light-emitting unit and a second light-emitting unit which are adjacent to each other through the partition wall and exhibit different colors;
The length of the long side in the upper surface shape of the partition is 90% or more of the length of the side facing the second light emitting unit in the first light emitting unit. In claim 1 or claim 2,
A light-emitting device in which a layer containing the organic compound is divided between light-emitting units that are adjacent to each other and have different colors via the partition. In any one of Claims 1 thru | or 3,
A light emitting unit having the same color continuously provided in one direction has the second electrode made of the same layer,
A light-emitting device in which the second electrode and the common wiring are electrically connected to each other outside a light-emitting unit including the plurality of light-emitting units. In claim 4,
A light-emitting device in which the common wiring is provided outside the light-emitting portion. In any one of Claims 1 thru | or 5,
The light emitting device wherein the donor substance is an alkali metal, an alkaline earth metal, a rare earth metal, an alkali metal compound, an alkaline earth metal compound, or a rare earth metal compound. In any one of Claims 1 thru | or 6,
The layer containing the organic compound is
A first layer comprising a layer containing a luminescent material;
A second layer comprising a layer containing a luminescent material;
A light emitting device comprising: an intermediate layer formed between the first layer and the second layer.   The electronic device which has a light-emitting device as described in any one of Claim 1 thru | or 7 in a display part.   The illuminating device which has a light-emitting device as described in any one of Claim 1 thru | or 7 in an illumination part.