JP6264596B2 - Manufacturing method of plated products - Google Patents
Manufacturing method of plated products Download PDFInfo
- Publication number
- JP6264596B2 JP6264596B2 JP2017508399A JP2017508399A JP6264596B2 JP 6264596 B2 JP6264596 B2 JP 6264596B2 JP 2017508399 A JP2017508399 A JP 2017508399A JP 2017508399 A JP2017508399 A JP 2017508399A JP 6264596 B2 JP6264596 B2 JP 6264596B2
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- JP
- Japan
- Prior art keywords
- catalyst
- glass substrate
- compound
- plating
- glass
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 238000004519 manufacturing process Methods 0.000 title claims description 17
- 239000011521 glass Substances 0.000 claims description 114
- 239000000758 substrate Substances 0.000 claims description 91
- 238000007747 plating Methods 0.000 claims description 88
- 239000003054 catalyst Substances 0.000 claims description 62
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical group [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 44
- 150000001875 compounds Chemical class 0.000 claims description 41
- 238000000034 method Methods 0.000 claims description 41
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 32
- 239000007788 liquid Substances 0.000 claims description 26
- 229910052751 metal Inorganic materials 0.000 claims description 23
- 239000002184 metal Substances 0.000 claims description 21
- 229910052763 palladium Inorganic materials 0.000 claims description 21
- 238000007772 electroless plating Methods 0.000 claims description 18
- 239000010931 gold Substances 0.000 claims description 18
- 150000003464 sulfur compounds Chemical class 0.000 claims description 17
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 16
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 13
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 12
- 239000010949 copper Substances 0.000 claims description 11
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 11
- 229910052737 gold Inorganic materials 0.000 claims description 11
- 229910045601 alloy Inorganic materials 0.000 claims description 10
- 239000000956 alloy Substances 0.000 claims description 10
- 229910052709 silver Inorganic materials 0.000 claims description 10
- 239000004332 silver Substances 0.000 claims description 10
- 239000011135 tin Substances 0.000 claims description 10
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 9
- 229910052802 copper Inorganic materials 0.000 claims description 9
- 229910052759 nickel Inorganic materials 0.000 claims description 9
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 8
- 229910052718 tin Inorganic materials 0.000 claims description 8
- 229910052697 platinum Inorganic materials 0.000 claims description 7
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 6
- 229910017052 cobalt Inorganic materials 0.000 claims description 6
- 239000010941 cobalt Substances 0.000 claims description 6
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 6
- 229910052703 rhodium Inorganic materials 0.000 claims description 6
- 239000010948 rhodium Substances 0.000 claims description 6
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 claims description 6
- 229910052707 ruthenium Inorganic materials 0.000 claims description 6
- 229910052742 iron Inorganic materials 0.000 claims description 5
- 230000001678 irradiating effect Effects 0.000 claims description 5
- 239000002253 acid Substances 0.000 claims description 4
- 150000001413 amino acids Chemical class 0.000 claims description 4
- 150000001414 amino alcohols Chemical class 0.000 claims description 4
- 229920000768 polyamine Polymers 0.000 claims description 4
- 229920001470 polyketone Polymers 0.000 claims description 4
- 125000002813 thiocarbonyl group Chemical group *C(*)=S 0.000 claims description 4
- 125000000101 thioether group Chemical group 0.000 claims description 4
- 125000003396 thiol group Chemical group [H]S* 0.000 claims description 4
- 150000007513 acids Chemical class 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 125000000524 functional group Chemical group 0.000 claims description 3
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 claims description 2
- 239000002738 chelating agent Substances 0.000 claims 2
- 150000004697 chelate complex Chemical class 0.000 claims 1
- 239000002585 base Substances 0.000 description 24
- 239000000463 material Substances 0.000 description 24
- 239000000243 solution Substances 0.000 description 14
- 239000013522 chelant Substances 0.000 description 11
- 230000008569 process Effects 0.000 description 10
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 9
- XFXPMWWXUTWYJX-UHFFFAOYSA-N Cyanide Chemical compound N#[C-] XFXPMWWXUTWYJX-UHFFFAOYSA-N 0.000 description 7
- 238000005342 ion exchange Methods 0.000 description 7
- 239000000126 substance Substances 0.000 description 7
- 238000009713 electroplating Methods 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 230000009849 deactivation Effects 0.000 description 5
- 239000012212 insulator Substances 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- DHMQDGOQFOQNFH-UHFFFAOYSA-N Glycine Chemical compound NCC(O)=O DHMQDGOQFOQNFH-UHFFFAOYSA-N 0.000 description 4
- 239000007864 aqueous solution Substances 0.000 description 4
- 239000005388 borosilicate glass Substances 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 238000007654 immersion Methods 0.000 description 4
- 239000010410 layer Substances 0.000 description 4
- UMGDCJDMYOKAJW-UHFFFAOYSA-N thiourea Chemical compound NC(N)=S UMGDCJDMYOKAJW-UHFFFAOYSA-N 0.000 description 4
- QMMFVYPAHWMCMS-UHFFFAOYSA-N Dimethyl sulfide Chemical compound CSC QMMFVYPAHWMCMS-UHFFFAOYSA-N 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 3
- 235000001014 amino acid Nutrition 0.000 description 3
- 229940024606 amino acid Drugs 0.000 description 3
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 3
- -1 silver ions Chemical class 0.000 description 3
- 239000005361 soda-lime glass Substances 0.000 description 3
- 229910000679 solder Inorganic materials 0.000 description 3
- 239000007921 spray Substances 0.000 description 3
- 238000006467 substitution reaction Methods 0.000 description 3
- 239000002344 surface layer Substances 0.000 description 3
- 230000003746 surface roughness Effects 0.000 description 3
- YXIWHUQXZSMYRE-UHFFFAOYSA-N 1,3-benzothiazole-2-thiol Chemical compound C1=CC=C2SC(S)=NC2=C1 YXIWHUQXZSMYRE-UHFFFAOYSA-N 0.000 description 2
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- 229920000298 Cellophane Polymers 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- VZCYOOQTPOCHFL-OWOJBTEDSA-N Fumaric acid Chemical compound OC(=O)\C=C\C(O)=O VZCYOOQTPOCHFL-OWOJBTEDSA-N 0.000 description 2
- 239000004471 Glycine Substances 0.000 description 2
- FFEARJCKVFRZRR-BYPYZUCNSA-N L-methionine Chemical compound CSCC[C@H](N)C(O)=O FFEARJCKVFRZRR-BYPYZUCNSA-N 0.000 description 2
- 229910052779 Neodymium Inorganic materials 0.000 description 2
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 2
- XSQUKJJJFZCRTK-UHFFFAOYSA-N Urea Natural products NC(N)=O XSQUKJJJFZCRTK-UHFFFAOYSA-N 0.000 description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 2
- YRKCREAYFQTBPV-UHFFFAOYSA-N acetylacetone Chemical compound CC(=O)CC(C)=O YRKCREAYFQTBPV-UHFFFAOYSA-N 0.000 description 2
- 239000005345 chemically strengthened glass Substances 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 229930182817 methionine Natural products 0.000 description 2
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 2
- 230000010355 oscillation Effects 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 238000004381 surface treatment Methods 0.000 description 2
- ZMZDMBWJUHKJPS-UHFFFAOYSA-N thiocyanic acid Chemical compound SC#N ZMZDMBWJUHKJPS-UHFFFAOYSA-N 0.000 description 2
- CWERGRDVMFNCDR-UHFFFAOYSA-N thioglycolic acid Chemical compound OC(=O)CS CWERGRDVMFNCDR-UHFFFAOYSA-N 0.000 description 2
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- MTCFGRXMJLQNBG-REOHCLBHSA-N (2S)-2-Amino-3-hydroxypropansäure Chemical compound OC[C@H](N)C(O)=O MTCFGRXMJLQNBG-REOHCLBHSA-N 0.000 description 1
- KWSLGOVYXMQPPX-UHFFFAOYSA-N 5-[3-(trifluoromethyl)phenyl]-2h-tetrazole Chemical compound FC(F)(F)C1=CC=CC(C2=NNN=N2)=C1 KWSLGOVYXMQPPX-UHFFFAOYSA-N 0.000 description 1
- 239000004475 Arginine Substances 0.000 description 1
- DCXYFEDJOCDNAF-UHFFFAOYSA-N Asparagine Natural products OC(=O)C(N)CC(N)=O DCXYFEDJOCDNAF-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- FEWJPZIEWOKRBE-JCYAYHJZSA-N Dextrotartaric acid Chemical compound OC(=O)[C@H](O)[C@@H](O)C(O)=O FEWJPZIEWOKRBE-JCYAYHJZSA-N 0.000 description 1
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 description 1
- 229910001111 Fine metal Inorganic materials 0.000 description 1
- WHUUTDBJXJRKMK-UHFFFAOYSA-N Glutamic acid Natural products OC(=O)C(N)CCC(O)=O WHUUTDBJXJRKMK-UHFFFAOYSA-N 0.000 description 1
- XUJNEKJLAYXESH-REOHCLBHSA-N L-Cysteine Chemical compound SC[C@H](N)C(O)=O XUJNEKJLAYXESH-REOHCLBHSA-N 0.000 description 1
- ONIBWKKTOPOVIA-BYPYZUCNSA-N L-Proline Chemical compound OC(=O)[C@@H]1CCCN1 ONIBWKKTOPOVIA-BYPYZUCNSA-N 0.000 description 1
- QNAYBMKLOCPYGJ-REOHCLBHSA-N L-alanine Chemical compound C[C@H](N)C(O)=O QNAYBMKLOCPYGJ-REOHCLBHSA-N 0.000 description 1
- ODKSFYDXXFIFQN-BYPYZUCNSA-P L-argininium(2+) Chemical compound NC(=[NH2+])NCCC[C@H]([NH3+])C(O)=O ODKSFYDXXFIFQN-BYPYZUCNSA-P 0.000 description 1
- DCXYFEDJOCDNAF-REOHCLBHSA-N L-asparagine Chemical compound OC(=O)[C@@H](N)CC(N)=O DCXYFEDJOCDNAF-REOHCLBHSA-N 0.000 description 1
- CKLJMWTZIZZHCS-REOHCLBHSA-N L-aspartic acid Chemical compound OC(=O)[C@@H](N)CC(O)=O CKLJMWTZIZZHCS-REOHCLBHSA-N 0.000 description 1
- WHUUTDBJXJRKMK-VKHMYHEASA-N L-glutamic acid Chemical compound OC(=O)[C@@H](N)CCC(O)=O WHUUTDBJXJRKMK-VKHMYHEASA-N 0.000 description 1
- ZDXPYRJPNDTMRX-VKHMYHEASA-N L-glutamine Chemical compound OC(=O)[C@@H](N)CCC(N)=O ZDXPYRJPNDTMRX-VKHMYHEASA-N 0.000 description 1
- HNDVDQJCIGZPNO-YFKPBYRVSA-N L-histidine Chemical compound OC(=O)[C@@H](N)CC1=CN=CN1 HNDVDQJCIGZPNO-YFKPBYRVSA-N 0.000 description 1
- AGPKZVBTJJNPAG-WHFBIAKZSA-N L-isoleucine Chemical compound CC[C@H](C)[C@H](N)C(O)=O AGPKZVBTJJNPAG-WHFBIAKZSA-N 0.000 description 1
- ROHFNLRQFUQHCH-YFKPBYRVSA-N L-leucine Chemical compound CC(C)C[C@H](N)C(O)=O ROHFNLRQFUQHCH-YFKPBYRVSA-N 0.000 description 1
- COLNVLDHVKWLRT-QMMMGPOBSA-N L-phenylalanine Chemical compound OC(=O)[C@@H](N)CC1=CC=CC=C1 COLNVLDHVKWLRT-QMMMGPOBSA-N 0.000 description 1
- AYFVYJQAPQTCCC-GBXIJSLDSA-N L-threonine Chemical compound C[C@@H](O)[C@H](N)C(O)=O AYFVYJQAPQTCCC-GBXIJSLDSA-N 0.000 description 1
- QIVBCDIJIAJPQS-VIFPVBQESA-N L-tryptophane Chemical compound C1=CC=C2C(C[C@H](N)C(O)=O)=CNC2=C1 QIVBCDIJIAJPQS-VIFPVBQESA-N 0.000 description 1
- OUYCCCASQSFEME-QMMMGPOBSA-N L-tyrosine Chemical compound OC(=O)[C@@H](N)CC1=CC=C(O)C=C1 OUYCCCASQSFEME-QMMMGPOBSA-N 0.000 description 1
- KZSNJWFQEVHDMF-BYPYZUCNSA-N L-valine Chemical compound CC(C)[C@H](N)C(O)=O KZSNJWFQEVHDMF-BYPYZUCNSA-N 0.000 description 1
- ROHFNLRQFUQHCH-UHFFFAOYSA-N Leucine Natural products CC(C)CC(N)C(O)=O ROHFNLRQFUQHCH-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 1
- ONIBWKKTOPOVIA-UHFFFAOYSA-N Proline Natural products OC(=O)C1CCCN1 ONIBWKKTOPOVIA-UHFFFAOYSA-N 0.000 description 1
- OFOBLEOULBTSOW-UHFFFAOYSA-N Propanedioic acid Natural products OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 description 1
- MTCFGRXMJLQNBG-UHFFFAOYSA-N Serine Natural products OCC(N)C(O)=O MTCFGRXMJLQNBG-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- KDYFGRWQOYBRFD-UHFFFAOYSA-N Succinic acid Natural products OC(=O)CCC(O)=O KDYFGRWQOYBRFD-UHFFFAOYSA-N 0.000 description 1
- FEWJPZIEWOKRBE-UHFFFAOYSA-N Tartaric acid Natural products [H+].[H+].[O-]C(=O)C(O)C(O)C([O-])=O FEWJPZIEWOKRBE-UHFFFAOYSA-N 0.000 description 1
- AYFVYJQAPQTCCC-UHFFFAOYSA-N Threonine Natural products CC(O)C(N)C(O)=O AYFVYJQAPQTCCC-UHFFFAOYSA-N 0.000 description 1
- 239000004473 Threonine Substances 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 description 1
- QIVBCDIJIAJPQS-UHFFFAOYSA-N Tryptophan Natural products C1=CC=C2C(CC(N)C(O)=O)=CNC2=C1 QIVBCDIJIAJPQS-UHFFFAOYSA-N 0.000 description 1
- KZSNJWFQEVHDMF-UHFFFAOYSA-N Valine Natural products CC(C)C(N)C(O)=O KZSNJWFQEVHDMF-UHFFFAOYSA-N 0.000 description 1
- 238000001994 activation Methods 0.000 description 1
- 239000012190 activator Substances 0.000 description 1
- 235000004279 alanine Nutrition 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- ODKSFYDXXFIFQN-UHFFFAOYSA-N arginine Natural products OC(=O)C(N)CCCNC(N)=N ODKSFYDXXFIFQN-UHFFFAOYSA-N 0.000 description 1
- 235000009697 arginine Nutrition 0.000 description 1
- 235000009582 asparagine Nutrition 0.000 description 1
- 229960001230 asparagine Drugs 0.000 description 1
- 235000003704 aspartic acid Nutrition 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- OQFSQFPPLPISGP-UHFFFAOYSA-N beta-carboxyaspartic acid Natural products OC(=O)C(N)C(C(O)=O)C(O)=O OQFSQFPPLPISGP-UHFFFAOYSA-N 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- KDYFGRWQOYBRFD-NUQCWPJISA-N butanedioic acid Chemical compound O[14C](=O)CC[14C](O)=O KDYFGRWQOYBRFD-NUQCWPJISA-N 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 230000003197 catalytic effect Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- KXZJHVJKXJLBKO-UHFFFAOYSA-N chembl1408157 Chemical compound N=1C2=CC=CC=C2C(C(=O)O)=CC=1C1=CC=C(O)C=C1 KXZJHVJKXJLBKO-UHFFFAOYSA-N 0.000 description 1
- 239000003638 chemical reducing agent Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 230000001427 coherent effect Effects 0.000 description 1
- 230000003750 conditioning effect Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- XUJNEKJLAYXESH-UHFFFAOYSA-N cysteine Natural products SCC(N)C(O)=O XUJNEKJLAYXESH-UHFFFAOYSA-N 0.000 description 1
- 235000018417 cysteine Nutrition 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 239000001530 fumaric acid Substances 0.000 description 1
- 235000011087 fumaric acid Nutrition 0.000 description 1
- 235000013922 glutamic acid Nutrition 0.000 description 1
- 239000004220 glutamic acid Substances 0.000 description 1
- ZDXPYRJPNDTMRX-UHFFFAOYSA-N glutamine Natural products OC(=O)C(N)CCC(N)=O ZDXPYRJPNDTMRX-UHFFFAOYSA-N 0.000 description 1
- 235000004554 glutamine Nutrition 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- HNDVDQJCIGZPNO-UHFFFAOYSA-N histidine Natural products OC(=O)C(N)CC1=CN=CN1 HNDVDQJCIGZPNO-UHFFFAOYSA-N 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 229960000310 isoleucine Drugs 0.000 description 1
- AGPKZVBTJJNPAG-UHFFFAOYSA-N isoleucine Natural products CCC(C)C(N)C(O)=O AGPKZVBTJJNPAG-UHFFFAOYSA-N 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- VZCYOOQTPOCHFL-UPHRSURJSA-N maleic acid Chemical compound OC(=O)\C=C/C(O)=O VZCYOOQTPOCHFL-UPHRSURJSA-N 0.000 description 1
- 239000011976 maleic acid Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- COLNVLDHVKWLRT-UHFFFAOYSA-N phenylalanine Natural products OC(=O)C(N)CC1=CC=CC=C1 COLNVLDHVKWLRT-UHFFFAOYSA-N 0.000 description 1
- 239000006089 photosensitive glass Substances 0.000 description 1
- AVTYONGGKAJVTE-OLXYHTOASA-L potassium L-tartrate Chemical compound [K+].[K+].[O-]C(=O)[C@H](O)[C@@H](O)C([O-])=O AVTYONGGKAJVTE-OLXYHTOASA-L 0.000 description 1
- NNFCIKHAZHQZJG-UHFFFAOYSA-N potassium cyanide Chemical compound [K+].N#[C-] NNFCIKHAZHQZJG-UHFFFAOYSA-N 0.000 description 1
- 239000001472 potassium tartrate Substances 0.000 description 1
- 229940111695 potassium tartrate Drugs 0.000 description 1
- 235000011005 potassium tartrates Nutrition 0.000 description 1
- 238000007781 pre-processing Methods 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 229910001379 sodium hypophosphite Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 125000004434 sulfur atom Chemical group 0.000 description 1
- 239000011975 tartaric acid Substances 0.000 description 1
- 235000002906 tartaric acid Nutrition 0.000 description 1
- 238000009864 tensile test Methods 0.000 description 1
- 238000010998 test method Methods 0.000 description 1
- 238000009210 therapy by ultrasound Methods 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000005341 toughened glass Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- OUYCCCASQSFEME-UHFFFAOYSA-N tyrosine Natural products OC(=O)C(N)CC1=CC=C(O)C=C1 OUYCCCASQSFEME-UHFFFAOYSA-N 0.000 description 1
- 239000004474 valine Substances 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
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- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1633—Process of electroless plating
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- C23C18/1639—Substrates other than metallic, e.g. inorganic or organic or non-conductive
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- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
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- C23C18/1601—Process or apparatus
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- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
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- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/18—Pretreatment of the material to be coated
- C23C18/1851—Pretreatment of the material to be coated of surfaces of non-metallic or semiconducting in organic material
- C23C18/1862—Pretreatment of the material to be coated of surfaces of non-metallic or semiconducting in organic material by radiant energy
- C23C18/1868—Radiation, e.g. UV, laser
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- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/18—Pretreatment of the material to be coated
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- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
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- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
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- C23C18/38—Coating with copper
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- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
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Description
本発明は、ガラス基材の表面にめっき皮膜パターンが形成されためっき品の製造方法に関する。 The present invention relates to a method for producing a plated product in which a plating film pattern is formed on the surface of a glass substrate.
家電や輸送機器などの製品に用いられる回路の基材として、従来、紙フェノール基材、紙エポキシ基材、ガラスエポキシ基材、セラミック基材などが用いられている。これらの基材は、電気的特性、機械的特性、価格がそれぞれ異なるため、製品に求められる性能やコストに応じて使い分けられている。現在、回路の基板としてガラス基材が注目されていて、ガラス基板の表面に金属皮膜パターンを形成する試みがなされている。ガラス基材は、従来用いられている基材に比べて、優れた熱安定性を有し、しかも安価であるという利点がある。 Conventionally, paper phenol base materials, paper epoxy base materials, glass epoxy base materials, ceramic base materials, and the like are used as circuit base materials used in products such as home appliances and transportation equipment. Since these base materials have different electrical characteristics, mechanical characteristics, and prices, they are properly used according to the performance and cost required for the product. At present, glass substrates are attracting attention as circuit boards, and attempts have been made to form metal film patterns on the surface of glass substrates. A glass substrate has the advantage that it has excellent thermal stability and is inexpensive as compared with a conventionally used substrate.
特許文献1には、被メッキ対象物である絶縁性基板の表面にエネルギ・ビームを照射し、このエネルギ・ビームの照射を基板表面の所定部分に行った後、化学メッキの際に析出核となる物質を化合物の状態で含有する液体を上記絶縁性基板の表面に接触させ、前記基板を洗浄して残存する前記流体を除去し、次いで前記エネルギ・ビームの照射面を所定の化学メッキ液と接触させて前記被着物質部分に化学メッキにより金属を析出させる選択的メッキ方法が記載されている。これにより、複雑かつ微細な金属析出パターンを製作することができるとされている。
In
しかしながら、特許文献1に記載のめっき方法においては、ガラス基材の表面に金属皮膜パターンを形成することについての記載も示唆もなかった。
However, in the plating method described in
特許文献2には、絶縁体の表面に金属配線を形成する金属配線形成方法において、レーザー光としてパルス幅がピコ秒オーダーのピコ秒レーザー光またはフェムト秒オーダーのフェムト秒レーザー光を、前記レーザー光の波長に対して透明かつ銀イオンを含有する絶縁体の表面に照射し、該照射領域において銀イオンを銀原子に還元して該照射領域に銀原子を生成し、前記レーザー光を照射されて該照射領域に銀原子が生成された前記絶縁体を所定の温度に維持した無電解めっき液に所定時間浸し、該銀原子を触媒核として金属を析出させることにより前記絶縁体に金属膜を堆積して金属配線を形成する金属配線形成方法が記載されている。実施例には、絶縁体として感光性ガラスを用いた例が記載されている。これにより、簡単な処理で、かつ少ない工程数により金属配線を形成することができるとされている。
In
しかしながら、特許文献2に記載のめっき方法では、特殊なガラス基材を使用しなければならず、当該ガラス基材は従来用いられている基材に比べて高価なので、この基材を用いた回路を広く普及させるには限界がある。
However, in the plating method described in
本発明は上記課題を解決するためになされたものであり、ガラス基材の表面に密着性の良好なめっき皮膜パターンが形成されためっき品を、簡易に製造することができる方法を提供することを目的とするものである。 The present invention has been made to solve the above problems, and provides a method for easily producing a plated product in which a plating film pattern having good adhesion is formed on the surface of a glass substrate. It is intended.
上記課題は、ガラス基材の表面にめっき皮膜パターンが形成されためっき品の製造方法であって、前記ガラス基材の表面の一部の領域にパルスレーザーを照射する第1工程と、前記ガラス基材の表面に無電解めっき触媒を付着させる第2工程と、前記触媒を失活させる化合物又は前記触媒を除去する化合物を含有する液に前記ガラス基材を接触させて、前記パルスレーザーが照射されていない箇所に付着した前記触媒を選択的に失活させるか、又は前記触媒を選択的に除去する第3工程と、第3工程の後に無電解めっきを行い、前記パルスレーザーを照射した領域にのみ選択的にめっき皮膜を形成する第4工程とを備えることを特徴とするめっき品の製造方法を提供することによって解決される。 The object is a method for manufacturing a plated product in which a plating film pattern is formed on the surface of a glass substrate, the first step of irradiating a part of the surface of the glass substrate with a pulsed laser, and the glass The second step of attaching an electroless plating catalyst to the surface of the substrate, and the pulsed laser is irradiated by bringing the glass substrate into contact with a liquid containing a compound that deactivates the catalyst or a compound that removes the catalyst A third step of selectively deactivating or selectively removing the catalyst adhering to a portion that has not been applied, and a region irradiated with the pulsed laser after electroless plating after the third step And a fourth step of selectively forming a plating film only on the substrate. This is solved by providing a method for manufacturing a plated product.
このとき、前記パルスレーザーのパルス幅が1×10−18〜1×10−4秒であることが好ましい。また前記めっき皮膜が、ニッケル、銅、銀、金、パラジウム、白金、ロジウム、ルテニウム、スズ、鉄、コバルト及びこれらの合金からなる群から選択される少なくとも1種であることが好ましい。At this time, the pulse width of the pulse laser is preferably 1 × 10 −18 to 1 × 10 −4 seconds. The plating film is preferably at least one selected from the group consisting of nickel, copper, silver, gold, palladium, platinum, rhodium, ruthenium, tin, iron, cobalt, and alloys thereof.
第3工程において、前記触媒を失活させる化合物が硫黄化合物であることが好ましい。このとき、前記硫黄化合物が、チオカルボニル基、チオール基、スルフィド基からなる群から選択される少なくとも1種の官能基を有する化合物であることが好ましい。 In the third step, the compound that deactivates the catalyst is preferably a sulfur compound. At this time, the sulfur compound is preferably a compound having at least one functional group selected from the group consisting of a thiocarbonyl group, a thiol group, and a sulfide group.
また第3工程において、前記触媒を除去する化合物がキレート化合物又はシアン化物であることも好ましい。このとき、前記触媒を除去する化合物が、アミノ酸、アミノアルコール、ポリアミン、ポリカルボン酸、ポリケトンからなる群から選択される少なくとも1種のキレート化合物であることが好ましい。 In the third step, it is also preferable that the compound for removing the catalyst is a chelate compound or a cyanide. At this time, the compound for removing the catalyst is preferably at least one chelate compound selected from the group consisting of amino acids, amino alcohols, polyamines, polycarboxylic acids, and polyketones.
本発明によれば、ガラス基材の表面に密着性の良好なめっき皮膜パターンが形成されためっき品を簡易に製造することができる。 According to the present invention, it is possible to easily manufacture a plated product in which a plating film pattern having good adhesion is formed on the surface of a glass substrate.
本発明は、ガラス基材の表面にめっき皮膜パターンが形成されためっき品の製造方法に関する。本発明の製造方法は、以下の第1〜第4工程を備える。以下、各工程について説明する。 The present invention relates to a method for producing a plated product in which a plating film pattern is formed on the surface of a glass substrate. The manufacturing method of the present invention includes the following first to fourth steps. Hereinafter, each step will be described.
第1工程において、パルスレーザーをガラス基材の表面の一部に照射する。第1工程で用いられるガラス基材の種類は特に限定されず、ソーダライムガラス、ホウケイ酸ガラス、石英ガラスなどが挙げられる。これらのガラス基材は、めっき品の用途に応じて適宜選択できる。コストを重視する場合には、ソーダライムガラスが好適である。熱安定性を重視する場合には、石英ガラスやホウケイ酸ガラスが好適であり、石英ガラスがより好適である。ガラス基材に含まれる不純物の量が少ないことを重視する場合には、石英ガラスやホウケイ酸ガラスが好適であり、石英ガラスがより好適である。ガラス基材の厚さは特に限定されないが通常0.02〜5mmである。形状も特に限定されない。また、熱処理により機械的強度を向上させたガラス基材を用いることもできる。このようなガラス基材としては、ガラスを加熱した後、急激に冷却することにより表層付近に圧縮応力を発生させることで得られる物理強化ガラスや、ガラスを加熱しつつイオン交換処理によりガラス表層にイオン半径が大きいアルカリイオンを導入し、ガラス表層付近に圧縮応力を発生させることで得られる化学強化ガラスが挙げられる。 In the first step, a part of the surface of the glass substrate is irradiated with a pulse laser. The kind of glass base material used at a 1st process is not specifically limited, Soda lime glass, borosilicate glass, quartz glass etc. are mentioned. These glass base materials can be suitably selected according to the use of the plated product. When cost is important, soda lime glass is preferable. When importance is attached to thermal stability, quartz glass or borosilicate glass is preferred, and quartz glass is more preferred. When importance is attached to the small amount of impurities contained in the glass substrate, quartz glass or borosilicate glass is preferred, and quartz glass is more preferred. Although the thickness of a glass base material is not specifically limited, Usually, it is 0.02-5 mm. The shape is not particularly limited. Moreover, the glass base material which improved the mechanical strength by heat processing can also be used. As such a glass substrate, after glass is heated, it is cooled to a glass surface layer by physical exchange glass obtained by generating a compressive stress in the vicinity of the surface layer by rapid cooling or by ion exchange treatment while heating the glass. Examples thereof include chemically strengthened glass obtained by introducing alkali ions having a large ion radius and generating compressive stress in the vicinity of the glass surface layer.
本発明では、パルスレーザーを用いることが重要である。パルスレーザーを用いると、ガラスのような透明基材であっても多光子吸収を起こさせることが可能になる。多光子吸収は、レーザーのピークパワー(W)が大きいほど起こりやすくなる。同じエネルギーであればピークパワー(W)はパルス幅が短くなるほど大きくなるため、パルス幅は短い方が好ましい。かかる観点から、パルスレーザーのパルス幅(秒)は、1×10−4秒以下であることが好ましく、1×10−7秒以下であることがより好ましく、1×10−9秒以下であることがさらに好ましく、1×10−10秒以下であることが特に好ましい。このように、パルス幅を極めて短くすることでレーザーのピークパワーを非常に高くすることができ、多光子吸収を起こさせることができる。パルスレーザーのパルス幅の下限値は特に限定されないが通常1×10−18秒以上であり、好適には、1×10−15秒以上である。そして、レーザーの加工点(焦点)がガラス基材の表面になるように設定すれば、ガラス基材の表面を加工することが可能になる。In the present invention, it is important to use a pulse laser. When a pulse laser is used, multiphoton absorption can be caused even with a transparent substrate such as glass. Multiphoton absorption is more likely to occur as the laser peak power (W) increases. If the energy is the same, the peak power (W) becomes larger as the pulse width becomes shorter. Therefore, the shorter pulse width is preferable. From this viewpoint, the pulse width (second) of the pulse laser is preferably 1 × 10 −4 seconds or less, more preferably 1 × 10 −7 seconds or less, and 1 × 10 −9 seconds or less. It is more preferable that the time is 1 × 10 −10 seconds or less. Thus, by making the pulse width extremely short, the peak power of the laser can be made very high, and multiphoton absorption can be caused. The lower limit of the pulse width of the pulse laser is not particularly limited, but is usually 1 × 10 −18 seconds or longer, and preferably 1 × 10 −15 seconds or longer. And if it sets so that the processing point (focus) of a laser may become the surface of a glass base material, it will become possible to process the surface of a glass base material.
加工点での平均出力が0.01〜1000Wであることが好ましい。加工点での平均出力が0.01W未満の場合、密着性の良好なめっき皮膜を得ることができないおそれがある。一方、加工点での平均出力が1000Wを超える場合、ガラス基材へのダメージが大きくなる。パルスレーザーの繰り返し周波数は特に限定されないが通常、1kHz〜1000MHzである。 The average output at the processing point is preferably 0.01 to 1000 W. When the average output at the processing point is less than 0.01 W, a plating film with good adhesion may not be obtained. On the other hand, when the average output at the processing point exceeds 1000 W, the damage to the glass substrate increases. The repetition frequency of the pulse laser is not particularly limited, but is usually 1 kHz to 1000 MHz.
レーザーの種類も特に限定されず、YAGレーザー、ファイバーレーザー、半導体レーザーなどの固体レーザー;炭酸ガスレーザー、エキシマレーザーなどの気体レーザーを用いることができる。パルスレーザーの波長は特に限定されず、用いるガラス基材の種類などにより適宜設定することができ、通常は100〜12000nmである。パルス発振が容易である観点から、YAGレーザーが好ましく、ネオジムYAGレーザーがより好ましい。ネオジムYAGレーザーでは、基本波(第1高調波)と呼ばれる1064nmのレーザー光が発生する。波長変換装置を用いることにより、第2高調波と呼ばれる波長532nmのレーザー光、第3高調波と呼ばれる波長355nmのレーザー光、第4高調波と呼ばれる266nmのレーザー光を得ることができる。本発明の製造方法では上記第1〜4高調波を目的に応じて適宜選択できる。 The type of laser is not particularly limited, and a solid laser such as a YAG laser, a fiber laser, or a semiconductor laser; a gas laser such as a carbon dioxide gas laser or an excimer laser can be used. The wavelength of the pulse laser is not particularly limited, and can be set as appropriate depending on the type of the glass substrate to be used, and is usually 100 to 12000 nm. From the viewpoint of easy pulse oscillation, a YAG laser is preferable, and a neodymium YAG laser is more preferable. In the neodymium YAG laser, a 1064 nm laser beam called a fundamental wave (first harmonic) is generated. By using the wavelength converter, laser light having a wavelength of 532 nm called second harmonic, laser light having a wavelength of 355 nm called third harmonic, and laser light having a wavelength of 266 nm called fourth harmonic can be obtained. In the production method of the present invention, the first to fourth harmonics can be appropriately selected according to the purpose.
そして、パルスレーザーをガラス基材の表面の一部に照射する。ガラス基材へのパルスレーザーの照射方法は特に限定されないが、例えば図1に示す方法が挙げられる。図1はパルスレーザーの照射方法の一例を示した図である。図1に示すように、ガラス基材の表面に照射エリアを設定する。後の工程において、パルスレーザーを照射した領域、すなわち、この照射エリアにのみ選択的にめっき皮膜が形成されることになる。そして、Stで示されているポイントからx方向(図1において右方向)に所定の走査速度でレーザーを照射した後、y方向(図1において上方向)に所定間隔レーザーを移動させて、−x方向(図1において左方向)に所定の走査速度でレーザーを照射した後、再びy方向に所定間隔レーザーを移動させる。照射スポット径はレーザーのビーム径に対応するが、照射スポットは相互に重なる必要はなく、照射スポットの間に間隔があってもかまわない。この方法において、走査速度及び間隔(ピッチ間隔)を適宜調節することにより、単位面積当たりのレーザー照射量を調節することができる。 Then, a part of the surface of the glass substrate is irradiated with a pulse laser. Although the irradiation method of the pulse laser to a glass base material is not specifically limited, For example, the method shown in FIG. 1 is mentioned. FIG. 1 is a diagram showing an example of a pulse laser irradiation method. As shown in FIG. 1, an irradiation area is set on the surface of the glass substrate. In a later step, a plating film is selectively formed only in the region irradiated with the pulse laser, that is, in this irradiation area. Then, after irradiating the laser at a predetermined scanning speed in the x direction (right direction in FIG. 1) from the point indicated by St, the laser is moved at a predetermined interval in the y direction (upward direction in FIG. 1), − After irradiating the laser in the x direction (left direction in FIG. 1) at a predetermined scanning speed, the laser is moved again in the y direction at a predetermined interval. The irradiation spot diameter corresponds to the beam diameter of the laser, but the irradiation spots do not have to overlap each other, and there may be an interval between the irradiation spots. In this method, the laser irradiation amount per unit area can be adjusted by appropriately adjusting the scanning speed and interval (pitch interval).
めっき皮膜の密着性の観点から、パルスレーザーが照射されたガラス表面の算術平均粗さ(Ra)は、0.1μm以上であることが好ましく、0.2μm以上であることがより好ましい。一方、Raの値が大きすぎるとめっき品の強度が低下するおそれがあるので、Raは、10μm以下であることが好ましく、5μm以下であることがより好ましい。本明細書におけるRaは、JIS B 0601(2001)に準拠した方法で得られる値である。 From the viewpoint of the adhesion of the plating film, the arithmetic average roughness (Ra) of the glass surface irradiated with the pulse laser is preferably 0.1 μm or more, and more preferably 0.2 μm or more. On the other hand, if the value of Ra is too large, the strength of the plated product may be lowered. Therefore, Ra is preferably 10 μm or less, and more preferably 5 μm or less. Ra in this specification is a value obtained by a method based on JIS B 0601 (2001).
次に、第2工程において、ガラス基材の表面に無電解めっき触媒を付着させる。無電解めっき触媒としては特に限定されず、無電解めっき液に対して触媒作用を有する金属元素を含有するものであればよい。当該金属元素としては、パラジウム(Pd)、銀(Ag)、銅(Cu)、ニッケル(Ni)、アルミニウム(Al)、鉄(Fe)、コバルト(Co)、亜鉛(Zn)、金(Au)、白金(Pt)、スズ(Sn)などが挙げられる。これらの金属元素は、第4工程で用いる無電解めっき液の種類により適宜選択できる。そして、ガラス基材を上記金属元素を含む水溶液で処理した後に還元剤を含む水溶液で処理して、無電解めっき触媒を活性化させることができる。 Next, in a second step, an electroless plating catalyst is adhered to the surface of the glass substrate. The electroless plating catalyst is not particularly limited as long as it contains a metal element having a catalytic action with respect to the electroless plating solution. As the metal element, palladium (Pd), silver (Ag), copper (Cu), nickel (Ni), aluminum (Al), iron (Fe), cobalt (Co), zinc (Zn), gold (Au) , Platinum (Pt), tin (Sn), and the like. These metal elements can be appropriately selected depending on the type of electroless plating solution used in the fourth step. And after processing a glass base material with the aqueous solution containing the said metal element, it can process with the aqueous solution containing a reducing agent, and can activate an electroless-plating catalyst.
次に、第3工程において、前記ガラス基材において、前記パルスレーザーが照射されていない箇所に付着した前記触媒を選択的に失活させるか又は前記触媒を選択的に除去する。 Next, in the third step, in the glass substrate, the catalyst adhering to a portion not irradiated with the pulse laser is selectively deactivated or the catalyst is selectively removed.
第3工程において前記触媒を除去する方法は特に限定されず、ガラス基材に対して超音波処理を施す方法やガラス基材の表面を流水で洗浄する方法を挙げることもできる。しかしながら、パルスレーザーが照射されていない箇所に付着した触媒を、より選択的に失活させる又は除去する観点から、前記触媒を失活させる化合物を含有する液にガラス基材を接触させる方法又は前記触媒を除去する化合物を含有する液にガラス基材を接触させる方法が好ましい。液にガラス基材を接触させる方法としては、触媒を失活させる化合物を含有する液にガラス基材を浸す方法、触媒を除去する化合物を含有する液にガラス基材を浸す方法、触媒を失活させる化合物を含有する液をガラス基材に塗布する方法、触媒を除去する化合物を含有する液をガラス基材に塗布する方法が挙げられる。 The method for removing the catalyst in the third step is not particularly limited, and examples thereof include a method for subjecting the glass substrate to ultrasonic treatment and a method for washing the surface of the glass substrate with running water. However, from the viewpoint of more selectively deactivating or removing the catalyst adhering to the portion not irradiated with the pulse laser, a method of bringing the glass substrate into contact with a liquid containing a compound that deactivates the catalyst or the above A method of bringing the glass substrate into contact with a liquid containing a compound for removing the catalyst is preferable. The glass substrate can be brought into contact with the solution by immersing the glass substrate in a solution containing a compound that deactivates the catalyst, by immersing the glass substrate in a solution containing a compound that removes the catalyst, or by losing the catalyst. The method of apply | coating the liquid containing the compound to be activated to a glass base material and the method of apply | coating the liquid containing the compound which removes a catalyst to a glass base material are mentioned.
第3工程において、触媒を失活させる化合物を含有する液にガラス基材を接触させる場合には、当該化合物が硫黄化合物であることが好ましい。本発明者らは、パラジウム触媒を付着させたガラス基材を用意し、硫黄化合物を含有する液に浸す前のガラス基材表面の化学組成と、硫黄化合物を含有する液に浸した後のガラス基材表面の化学組成とを、光電子分光装置(XPS)を用いて分析した。その結果、硫黄化合物を含有する液に浸した後も基材表面にはパラジウムが存在していることがわかった。また、硫黄化合物を含有する液に浸すことで、パラジウムに由来するピークの位置が変化することもわかった。本発明者らは、この結果は硫黄原子がパラジウムに配位したことを示すものであると考えていて、これによりパラジウム触媒が失活すると推定している。 In the third step, when the glass substrate is brought into contact with a liquid containing a compound that deactivates the catalyst, the compound is preferably a sulfur compound. The present inventors prepared a glass base material to which a palladium catalyst is attached, the chemical composition of the surface of the glass base material before immersion in a liquid containing a sulfur compound, and the glass after immersion in a liquid containing a sulfur compound. The chemical composition of the substrate surface was analyzed using a photoelectron spectrometer (XPS). As a result, it was found that palladium was present on the surface of the substrate even after immersion in a liquid containing a sulfur compound. It was also found that the position of the peak derived from palladium changes when immersed in a liquid containing a sulfur compound. The present inventors consider that this result indicates that the sulfur atom is coordinated to palladium, and this presumes that the palladium catalyst is deactivated.
前記硫黄化合物が、チオカルボニル基、チオール基、スルフィド基からなる群から選択される少なくとも1種の官能基を有する化合物であることが好ましい。チオカルボニル基を有する硫黄化合物としては、チオ尿素などが挙げられる。チオール基を有する硫黄化合物としては、トリアジンチオール、メルカプトベンゾチアゾール、メルカプト酢酸、チオシアン酸などが挙げられる。スルフィド基を有する硫黄化合物としては、ジメチルスルフィド、メチオニンなどが挙げられる。 The sulfur compound is preferably a compound having at least one functional group selected from the group consisting of a thiocarbonyl group, a thiol group, and a sulfide group. Examples of the sulfur compound having a thiocarbonyl group include thiourea. Examples of the sulfur compound having a thiol group include triazine thiol, mercaptobenzothiazole, mercaptoacetic acid, and thiocyanic acid. Examples of the sulfur compound having a sulfide group include dimethyl sulfide and methionine.
硫黄化合物を含有する液の濃度が低すぎると、触媒を選択的に失活させることができなくなるおそれがある。かかる観点から、硫黄化合物の濃度は、0.001ppm以上であることが好ましい。一方、硫黄化合物の濃度が高すぎると、パルスレーザーを照射した箇所に付着した触媒も失活するおそれがある。かかる観点から、硫黄化合物の濃度は、100ppm以下であることが好ましい。 If the concentration of the liquid containing the sulfur compound is too low, the catalyst may not be selectively deactivated. From this viewpoint, the concentration of the sulfur compound is preferably 0.001 ppm or more. On the other hand, if the concentration of the sulfur compound is too high, the catalyst attached to the portion irradiated with the pulse laser may be deactivated. From this viewpoint, the concentration of the sulfur compound is preferably 100 ppm or less.
前記触媒を失活させる化合物を含有する液に用いられる溶媒は特に限定されず通常、水やアルコールである。触媒を失活させる化合物を含有する液にガラス基材を浸す場合、ガラス基材を浸す際の温度は特に限定されず通常、5〜90℃である。ガラス基材を浸す時間も特に限定されず通常、1秒〜30分である。触媒を失活させる化合物を含有する液をガラス基材に塗布する方法としては、ガラス基材に当該液をスプレー法により塗布する方法が挙げられる。 The solvent used in the liquid containing the compound that deactivates the catalyst is not particularly limited, and is usually water or alcohol. When the glass substrate is immersed in a liquid containing a compound that deactivates the catalyst, the temperature at which the glass substrate is immersed is not particularly limited, and is usually 5 to 90 ° C. The time for immersing the glass substrate is not particularly limited, and is usually 1 second to 30 minutes. Examples of the method of applying a liquid containing a compound that deactivates the catalyst to a glass substrate include a method of applying the liquid to a glass substrate by a spray method.
第3工程において、触媒を除去する化合物を含有する液にガラス基材を接触させる場合には、当該化合物がキレート化合物又はシアン化物であることが好ましい。取り扱い性の観点から、前記触媒を除去する化合物が、アミノ酸、アミノアルコール、ポリアミン、ポリカルボン酸、ポリケトンからなる群から選択される少なくとも1種のキレート化合物であることが好ましい。アミノ酸としては、アラニン、アルギニン、アスパラギン、アスパラギン酸、システイン、グルタミン、グルタミン酸、グリシン、ヒスチジン、イソロイシン、ロイシン、メチオニン、フェニルアラニン、プロリン、セリン、トレオニン、トリプトファン、チロシン、バリンなどが挙げられる。アミノアルコールとしては、トリエタノールアミンなどが挙げられる。ポリアミンとしては、エチレンジアミンなどが挙げられる。ポリカルボン酸としては、クエン酸、コハク酸、マレイン酸、フマル酸、酒石酸、酒石酸カリウムなどが挙げられる。ポリケトンとしては、アセチルアセトンなどが挙げられる。 In a 3rd process, when making a glass base material contact the liquid containing the compound which removes a catalyst, it is preferable that the said compound is a chelate compound or a cyanide. From the viewpoint of handleability, the compound that removes the catalyst is preferably at least one chelate compound selected from the group consisting of amino acids, amino alcohols, polyamines, polycarboxylic acids, and polyketones. Examples of amino acids include alanine, arginine, asparagine, aspartic acid, cysteine, glutamine, glutamic acid, glycine, histidine, isoleucine, leucine, methionine, phenylalanine, proline, serine, threonine, tryptophan, tyrosine, valine and the like. Examples of amino alcohols include triethanolamine. Examples of the polyamine include ethylenediamine. Examples of the polycarboxylic acid include citric acid, succinic acid, maleic acid, fumaric acid, tartaric acid, and potassium tartrate. Examples of the polyketone include acetylacetone.
本発明者らは、パラジウム触媒を付着させたガラス基材を用意し、キレート化合物を含有する液に浸す前のガラス基材表面の化学組成と、キレート化合物を含有する液に浸した後のガラス基材表面の化学組成とを、光電子分光装置(XPS)を用いて分析した。その結果、キレート化合物を含有する液に浸すことにより、基材表面のパラジウム触媒が除去されていることがわかった。また、ガラス基材を浸した後の液を、ICP発光分析装置を用いて調べたところ、当該液にはパラジウムが含まれていることが分かった。 The present inventors have prepared a glass substrate to which a palladium catalyst is attached, the chemical composition of the surface of the glass substrate before being immersed in the liquid containing the chelate compound, and the glass after being immersed in the liquid containing the chelate compound The chemical composition of the substrate surface was analyzed using a photoelectron spectrometer (XPS). As a result, it was found that the palladium catalyst on the surface of the base material was removed by immersing in a liquid containing a chelate compound. Moreover, when the liquid after immersing a glass base material was investigated using the ICP emission spectrometer, it turned out that the said liquid contains palladium.
上記シアン化物としては、シアン化カリウムやシアン化ナトリウムなどが挙げられる。 Examples of the cyanide include potassium cyanide and sodium cyanide.
キレート化合物又はシアン化物の濃度が低すぎると、触媒を選択的に除去することができなくなるおそれがある。かかる観点から、キレート化合物又はシアン化物の濃度は、0.001M以上であることが好ましい。一方、キレート化合物又はシアン化物の濃度が高すぎると、パルスレーザーを照射した箇所に付着した触媒も除去されるおそれがある。かかる観点から、キレート化合物又はシアン化物の濃度は、3M以下であることが好ましい。 If the concentration of the chelate compound or cyanide is too low, the catalyst may not be selectively removed. From this viewpoint, the concentration of the chelate compound or cyanide is preferably 0.001M or more. On the other hand, if the concentration of the chelate compound or cyanide is too high, the catalyst attached to the portion irradiated with the pulse laser may be removed. From this viewpoint, the concentration of the chelate compound or cyanide is preferably 3M or less.
前記触媒を除去する化合物を含有する液に用いられる溶媒は特に限定されず通常、水やアルコールである。ガラス基材を浸す際の温度は特に限定されず通常、5〜90℃である。ガラス基材を浸す時間も特に限定されず通常、1秒〜30分である。触媒を除去する化合物を含有する液をガラス基材に塗布する方法としては、ガラス基材に当該液をスプレー法により塗布する方法が挙げられる。 The solvent used for the liquid containing the compound for removing the catalyst is not particularly limited, and is usually water or alcohol. The temperature at which the glass substrate is immersed is not particularly limited and is usually 5 to 90 ° C. The time for immersing the glass substrate is not particularly limited, and is usually 1 second to 30 minutes. Examples of the method of applying a liquid containing a compound for removing the catalyst to a glass substrate include a method of applying the liquid to a glass substrate by a spray method.
第4工程において、第3工程の後に無電解めっきを行い、前記パルスレーザーを照射した領域にのみ選択的にめっき皮膜を形成する。このとき、前記めっき皮膜が、ニッケル、銅、銀、金、パラジウム、白金、ロジウム、ルテニウム、スズ、鉄、コバルト及びこれらの合金からなる群から選択される少なくとも1種であることが好ましい。ここで、上記合金は、これらの少なくとも1種の金属元素を50質量%以上含有する合金のことをいう。 In the fourth step, electroless plating is performed after the third step, and a plating film is selectively formed only in the region irradiated with the pulse laser. At this time, the plating film is preferably at least one selected from the group consisting of nickel, copper, silver, gold, palladium, platinum, rhodium, ruthenium, tin, iron, cobalt, and alloys thereof. Here, the said alloy means the alloy containing 50 mass% or more of these at least 1 sort (s) of metal elements.
第4工程で用いられる無電解めっきとしては、無電解ニッケルめっき、無電解銅めっき、無電解銀めっき、無電解金めっき、無電解パラジウム、無電解白金めっき、無電解ロジウムめっき、無電解ルテニウムめっき、無電解スズめっき、無電解鉄めっき、無電解コバルトめっき又はこれらの無電解合金めっきが挙げられる。ここで、上記無電解合金めっきは、これらの少なくとも1種の金属元素を50質量%以上含有する無電解めっきのことをいう。無電解めっきの種類を変えてこの工程を複数回行ってもよい。 As the electroless plating used in the fourth step, electroless nickel plating, electroless copper plating, electroless silver plating, electroless gold plating, electroless palladium, electroless platinum plating, electroless rhodium plating, electroless ruthenium plating , Electroless tin plating, electroless iron plating, electroless cobalt plating, or electroless alloy plating thereof. Here, the electroless alloy plating refers to electroless plating containing 50% by mass or more of these at least one metal element. You may perform this process in multiple times, changing the kind of electroless plating.
以上説明したように、本発明の製造方法によれば、特殊なガラス基材を用いることなくガラス基材の表面に所望のめっき皮膜パターンを正確に形成することができる。後述する実施例でも実証されているように、パルスレーザーによりパターンを形成してその後に無電解めっき処理をすると、レーザーを照射した領域にめっき皮膜を形成することができた。しかしながら、第3工程を行わなかった場合、レーザーを照射した領域だけでなく、レーザーを照射しなかった領域にもめっき皮膜が形成された(比較例1)。本発明の製造方法を用いれば、レーザーが照射されていない箇所に付着した触媒を選択的に失活させるか又は選択的に除去することができるので、レーザーを照射した領域にのみ選択的にめっき皮膜を形成することができる。 As described above, according to the manufacturing method of the present invention, a desired plating film pattern can be accurately formed on the surface of a glass substrate without using a special glass substrate. As demonstrated in the examples described later, when a pattern was formed by a pulse laser and then electroless plating was performed, a plating film could be formed in the region irradiated with the laser. However, when the third step was not performed, a plating film was formed not only in the region irradiated with the laser but also in the region not irradiated with the laser (Comparative Example 1). If the production method of the present invention is used, the catalyst adhering to the portion not irradiated with the laser can be selectively deactivated or selectively removed, so that only the region irradiated with the laser is selectively plated. A film can be formed.
また、本発明の製造方法で形成されためっき皮膜は優れた密着性を有する。近年、製品の軽量化や高性能化にともなって、めっき品に要求される性能も厳しくなっていて、皮膜パターンがより微細なめっき品が求められている。しかしながら、パターンのピッチが微細になるとめっき皮膜のより高度な密着性が要求されるようになる。したがって、微細な皮膜パターンを有するめっき品を得る場合、本発明の製造方法を用いることのメリットは大きい。 Moreover, the plating film formed with the manufacturing method of this invention has the outstanding adhesiveness. In recent years, with the reduction in weight and performance of products, the performance required for plated products has become strict, and plated products with a finer film pattern are required. However, when the pitch of the pattern becomes finer, higher adhesion of the plating film is required. Therefore, when obtaining a plated product having a fine film pattern, the merit of using the manufacturing method of the present invention is great.
本発明の製造方法における第4工程の後に、さらに他の工程を備えてもよい。当該他の工程としては、電解めっき工程や各種表面処理工程が挙げられる。電解めっきとしては、電解ニッケルめっき、電解銅めっき、電解銀めっき、電解金めっき、電解パラジウムめっき、電解スズめっき、電解鉄めっき、電解ビスマスめっき、電解白金めっき、電解ロジウム、電解ルテニウム、電解亜鉛めっき又はこれらの電解合金めっきが挙げられる。ここで、上記無電解合金めっきは、これらの少なくとも1種の金属元素を50質量%以上含有する電解めっきのことをいう。各種表面処理工程としては、コールドスプレー法により金属を吹き付ける工程や金属ペーストを塗布する工程が挙げられる。このとき用いられる金属は、銅、スズ、金、銀、ニッケル、鉄、パラジウム、ルテニウム、ロジウム、イリジウム、インジウム、亜鉛、アルミニウム、タングステン、クロム、マグネシウム、チタン、シリコン又はこれらの合金などである。これらの他の工程は複数回行ってもよく、工程は同じであっても異なっていてもかまわない。また第4工程の後に、熱処理によりガラス基材の機械的強度を向上させることもできる。 Another step may be provided after the fourth step in the production method of the present invention. Examples of the other processes include an electrolytic plating process and various surface treatment processes. Electrolytic plating includes electrolytic nickel plating, electrolytic copper plating, electrolytic silver plating, electrolytic gold plating, electrolytic palladium plating, electrolytic tin plating, electrolytic iron plating, electrolytic bismuth plating, electrolytic platinum plating, electrolytic rhodium, electrolytic ruthenium, and electrolytic zinc plating. Or these electrolytic alloy plating is mentioned. Here, the electroless alloy plating refers to electrolytic plating containing at least 50% by mass of these at least one metal element. Examples of the various surface treatment steps include a step of spraying metal by a cold spray method and a step of applying a metal paste. The metal used at this time is copper, tin, gold, silver, nickel, iron, palladium, ruthenium, rhodium, iridium, indium, zinc, aluminum, tungsten, chromium, magnesium, titanium, silicon, or an alloy thereof. These other steps may be performed a plurality of times, and the steps may be the same or different. Moreover, the mechanical strength of a glass base material can also be improved by heat processing after a 4th process.
以下、実施例を用いて本発明をさらに詳細に説明するが、本発明はこれらに限定されるものではない。 EXAMPLES Hereinafter, although this invention is demonstrated further in detail using an Example, this invention is not limited to these.
実施例1
[レーザー照射]
(ガラス基材)
ガラス基材として縦76mm×横26mm×厚さ1.1mmのソーダライムガラス(「松波スライドグラス S7213」)を準備した。Example 1
[Laser irradiation]
(Glass substrate)
Soda lime glass ("Matsunami slide glass S7213") having a length of 76 mm, a width of 26 mm, and a thickness of 1.1 mm was prepared as a glass substrate.
(加工方法)
コヒレント・ジャパン株式会社製のパルス発振全固体レーザー「Talisker HE」を用いた。
波長:355nm
平均出力:2W
加工点での平均出力:0.8W
パルス幅:20ピコ秒
周波数:50kHz(Processing method)
A pulse oscillation all solid-state laser “Talisker HE” manufactured by Coherent Japan Co., Ltd. was used.
Wavelength: 355nm
Average output: 2W
Average output at the processing point: 0.8W
Pulse width: 20 picoseconds Frequency: 50 kHz
そして、図1に示す方法により、ガラス基材にパルスレーザーを照射した。具体的には、ガラス基材の表面に20mm×10mmの照射エリアを設定した。この照射エリアにおいて、Stで示されているポイントからx方向に走査速度100mm/秒で照射エリアの右端までパルスレーザーを照射した。そして、パルスレーザーをy方向に15μm移動させて、−x方向に走査速度100mm/秒で照射エリアの左端までパルスレーザーを照射した。これを繰り返すことにより、上記照射エリア全体にパルスレーザーを照射した。 And the pulse laser was irradiated to the glass base material by the method shown in FIG. Specifically, an irradiation area of 20 mm × 10 mm was set on the surface of the glass substrate. In this irradiation area, a pulse laser was irradiated from the point indicated by St to the right end of the irradiation area in the x direction at a scanning speed of 100 mm / second. Then, the pulse laser was moved by 15 μm in the y direction, and the pulse laser was irradiated to the left end of the irradiation area at a scanning speed of 100 mm / sec in the −x direction. By repeating this, the entire irradiation area was irradiated with a pulse laser.
パルスレーザー照射後、ガラス基材の表面を観察したところ、図1に示されるように、スポット(凹部)が連なったように加工されていることがわかった。1つのスポット径を測定したところ、スポット径は約15μmであった。 When the surface of the glass substrate was observed after the pulse laser irradiation, it was found that the surface was processed as a series of spots (concave portions) as shown in FIG. When one spot diameter was measured, the spot diameter was about 15 μm.
[無電解めっき]
(前処理)
レーザー加工されたガラス基材を、50℃に保温した水酸化カリウム水溶液(濃度:50g/L)に5分間浸した。その後、ガラス基材をイオン交換水で洗浄した。次いで、ガラス基材を、50℃に保温したコンディショニング液(濃度:50mL/L、上村工業株式会社製「スルカップ THRU−CUP MTE−1−A」)に5分間浸した。その後、ガラス基材をイオン交換水で洗浄した。[Electroless plating]
(Preprocessing)
The laser-processed glass substrate was immersed in an aqueous potassium hydroxide solution (concentration: 50 g / L) kept at 50 ° C. for 5 minutes. Thereafter, the glass substrate was washed with ion exchange water. Next, the glass substrate was immersed in a conditioning solution (concentration: 50 mL / L, “Sulcup THRU-CUP MTE-1-A” manufactured by Uemura Kogyo Co., Ltd.) kept at 50 ° C. for 5 minutes. Thereafter, the glass substrate was washed with ion exchange water.
(無電解めっき触媒付着処理)
前処理されたガラス基材を、室温のパラジウム触媒液(濃度:50mL/L、上村工業株式会社製「アクチベーター A−10X」)に1分間浸した。その後、ガラス基材をイオン交換水で3回洗浄した。(Electroless plating catalyst adhesion treatment)
The pretreated glass substrate was immersed in a room temperature palladium catalyst solution (concentration: 50 mL / L, “Activator A-10X” manufactured by Uemura Kogyo Co., Ltd.) for 1 minute. Thereafter, the glass substrate was washed three times with ion exchange water.
(活性化処理)
パラジウム触媒を付着させたガラス基材を、50℃に保温した次亜リン酸ナトリウム水溶液(濃度:0.27M)に30秒間浸漬し、パラジウム触媒を活性化させた。その後、ガラス基材をイオン交換水で洗浄した。(Activation process)
The glass substrate to which the palladium catalyst was adhered was immersed in an aqueous sodium hypophosphite solution (concentration: 0.27 M) kept at 50 ° C. for 30 seconds to activate the palladium catalyst. Thereafter, the glass substrate was washed with ion exchange water.
(触媒失活処理)
活性化処理されたガラス基材を、50℃に保温したチオ尿素水溶液(濃度:0.1ppm)に1分間浸して、パルスレーザーが照射されていない箇所に付着したパラジウム触媒を選択的に失活させた。その後、ガラス基材をイオン交換水で3回洗浄した。(Catalyst deactivation treatment)
The activated glass substrate is immersed in a thiourea aqueous solution (concentration: 0.1 ppm) kept at 50 ° C. for 1 minute to selectively deactivate the palladium catalyst adhering to the portion not irradiated with the pulse laser. I let you. Thereafter, the glass substrate was washed three times with ion exchange water.
(無電解Niめっき処理)
ガラス基材を、75℃に保温したpH4.4の無電解Niめっき液に35分間浸漬して、無電解Niめっき処理をして、ガラス基材の表面に膜厚5μmの無電解Niめっき層を形成した。その後、基材をイオン交換水で3回洗浄した。無電解Niめっき液の組成は下記の通りである。
・日本エレクトロプレイティング・エンジニヤース株式会社(EEJA)製「ELN240 M2」:150mL/L
・日本エレクトロプレイティング・エンジニヤース株式会社(EEJA)製「ELN240 M1」:50mL/L
・日本エレクトロプレイティング・エンジニヤース株式会社(EEJA)製「ELN240 R3」:6mL/L(Electroless Ni plating treatment)
The glass substrate is immersed in an electroless Ni plating solution having a pH of 4.4 kept at 75 ° C. for 35 minutes, subjected to electroless Ni plating treatment, and an electroless Ni plating layer having a thickness of 5 μm is formed on the surface of the glass substrate. Formed. Thereafter, the substrate was washed three times with ion exchange water. The composition of the electroless Ni plating solution is as follows.
・ "ELN240 M2" manufactured by Nippon Electroplating Engineers Co., Ltd. (EEJA): 150mL / L
・ "ELN240 M1" manufactured by Nippon Electroplating Engineers Co., Ltd. (EEJA): 50mL / L
・ "ELN240 R3" manufactured by Nippon Electroplating Engineers Co., Ltd. (EEJA): 6mL / L
(置換Auめっき処理)
Niめっき層が形成されたガラス基材を、55℃に保温した金めっき液(EEJA製「PRECIOUSFAB IGS8000SPF」)に10分間浸漬して、Niめっき層の上に、厚さ0.05μmの置換Auめっき層を形成してめっき品を得た。(Substitution Au plating treatment)
The glass substrate on which the Ni plating layer is formed is dipped in a gold plating solution (“PRECIOUSFAB IGS8000SPF” manufactured by EEJA) kept at 55 ° C. for 10 minutes, and a substituted Au having a thickness of 0.05 μm is formed on the Ni plating layer. A plating layer was formed to obtain a plated product.
[評価]
(表面観察)
得られためっき品の表面をマイクロスコープで観察した。得られた画像を図2に示す。図2の1はガラス基材であり、2は置換金めっき皮膜である。図2に示されるように、「触媒失活処理」を行うことにより、パルスレーザーを照射した領域にのみ選択的にめっき皮膜が形成された。[Evaluation]
(Surface observation)
The surface of the obtained plated product was observed with a microscope. The obtained image is shown in FIG. 2 in FIG. 2 is a glass substrate, and 2 is a displacement gold plating film. As shown in FIG. 2, by performing the “catalyst deactivation treatment”, a plating film was selectively formed only in the region irradiated with the pulse laser.
(密着性試験)
密着性試験はJIS H8504に記載されているはんだ付け試験方法に従い行った。このときのL形金具は板厚0.5mmの無酸素銅板であった。そして、はんだ付け部の面積が5mm×5mになるように、指定された形状にプレス成型した後、下地として膜厚3μmのニッケルめっきを施し、膜厚0.05μm金めっきを施した。一方、めっき品の表面にはんだを塗布(φ8mm×t0.2mm)した後、300℃で1分間加熱した。そして、L形金具とめっき品とをはんだ付けをして試験片を得た。得られた試験片をインストロン社製引張試験機「3382床置き型試験システム」に取り付けて、密着性試験を行った。はんだは、Tarutin Kester社製の鉛フリーはんだペースト「TSC-254-5042SF 12-1」を用いた。図3に引張試験後の画像を示す。図3に示すように、めっき皮膜はガラスとともに剥がれた。(Adhesion test)
The adhesion test was performed according to the soldering test method described in JIS H8504. The L-shaped metal fitting at this time was an oxygen-free copper plate having a plate thickness of 0.5 mm. And after press-molding to the designated shape so that the area of a soldering part might be set to 5 mm x 5 m, nickel plating with a film thickness of 3 micrometers was given as a foundation | substrate, and 0.05 micrometers film thickness gold plating was given. On the other hand, after applying solder (φ8 mm × t0.2 mm) to the surface of the plated product, it was heated at 300 ° C. for 1 minute. Then, the L-shaped bracket and the plated product were soldered to obtain a test piece. The obtained test piece was attached to an Instron tensile tester “3382 floor-standing type test system”, and an adhesion test was performed. As the solder, a lead-free solder paste “TSC-254-5042SF 12-1” manufactured by Tarutin Kester was used. FIG. 3 shows an image after the tensile test. As shown in FIG. 3, the plating film peeled off with the glass.
実施例2
「無電解めっき触媒付着処理」において、パラジウム触媒液に浸漬させる時間を2分に変更し、「触媒失活処理」の代わりに「触媒除去処理」を行った。「触媒除去処理」では、室温のグリシン水溶液(濃度:0.05M)に活性化処理されたガラス基材を30秒間浸漬させた以外は実施例1と同様にしてめっき品を得て、その表面をマイクロスコープで観察した。得られた画像を図4に示す。図4の1はガラス基材であり、2は置換Auめっき皮膜である。図4に示されるように、「触媒除去処理」を行うことにより、パルスレーザーを照射した領域にのみ選択的にめっき皮膜が形成された。そして、実施例1と同様にして密着性試験を行った。その結果、めっき皮膜はガラスとともに剥がれた。Example 2
In “electroless plating catalyst adhesion treatment”, the time of immersion in the palladium catalyst solution was changed to 2 minutes, and “catalyst removal treatment” was performed instead of “catalyst deactivation treatment”. In “catalyst removal treatment”, a plated product was obtained in the same manner as in Example 1 except that a glass substrate that had been activated in a glycine aqueous solution (concentration: 0.05 M) at room temperature was immersed for 30 seconds. Was observed with a microscope. The obtained image is shown in FIG. 4 in FIG. 4 is a glass substrate, and 2 is a substituted Au plating film. As shown in FIG. 4, by performing the “catalyst removal treatment”, a plating film was selectively formed only in the region irradiated with the pulse laser. And the adhesiveness test was done like Example 1. As a result, the plating film peeled off with the glass.
実施例3
ガラス基材を、76mm×26mm×1.1mmのホウケイ酸ガラス(「松波スライドグラス S1127」)に変えた以外は実施例1と同様にしてめっき品を得た。そして、実施例1と同様にして密着性試験を行った。その結果、めっき皮膜はガラスとともに剥がれた。Example 3
A plated product was obtained in the same manner as in Example 1 except that the glass substrate was changed to 76 mm × 26 mm × 1.1 mm borosilicate glass (“Matsunami slide glass S1127”). And the adhesiveness test was done like Example 1. As a result, the plating film peeled off with the glass.
実施例4
ガラス基材を縦70mm×横30mm×厚さ0.55mmの強化ガラス(AGC旭硝子製「Dragontrail(ドラゴントレイル)」)に変え、パルスレーザーの照射において、加工点での平均出力を1.1W、y方向への移動距離を6μm、走査速度を300mm/秒に変えた以外は実施例1と同様にガラス基材にパルスレーザーを照射した。「Dragontrail」は化学強化されたガラスであり、ガラス表面のNa+をK+に交換したものである。Example 4
The glass substrate is changed to tempered glass of 70 mm length × 30 mm width × 0.55 mm thickness (“Dragontrail” manufactured by AGC Asahi Glass), and the average output at the processing point is 1.1 W when irradiated with pulsed laser. The glass substrate was irradiated with a pulse laser in the same manner as in Example 1 except that the moving distance in the y direction was changed to 6 μm and the scanning speed was changed to 300 mm / second. “Dragontrail” is a chemically strengthened glass, in which Na + on the glass surface is replaced with K + .
株式会社キーエンス製のカラー3Dレーザー顕微鏡「VK−9700」(観察倍率50倍)を用いて、JIS B 0601(2001)に準拠した方法により、パルスレーザーが照射された箇所の算術平均粗さ(Ra)を測定した。その結果、Raは0.41μmであった。 Using a color 3D laser microscope “VK-9700” (50 × observation magnification) manufactured by Keyence Corporation, the arithmetic average roughness (Ra) of the portion irradiated with the pulse laser by a method based on JIS B 0601 (2001) ) Was measured. As a result, Ra was 0.41 μm.
表面粗さを測定した後、実施例2と同様にしてガラス基材の表面にめっき皮膜を形成させた。その結果、パルスレーザーを照射した領域にのみ選択的にめっき皮膜が形成された。そして、実施例1と同様にして密着性試験を行ったところ、めっき皮膜はガラスとともに剥がれた。 After measuring the surface roughness, a plating film was formed on the surface of the glass substrate in the same manner as in Example 2. As a result, a plating film was selectively formed only in the region irradiated with the pulse laser. And when the adhesiveness test was done like Example 1, the plating film peeled off with glass.
実施例5
パルスレーザーの照射において、加工点での平均出力を1.1W、y方向への移動距離を10μm、走査速度を50mm/秒に変えた以外は実施例4と同様にしてガラス基材にパルスレーザーを照射した。そして、実施例4と同様にしてパルスレーザーが照射された箇所の算術平均粗さ(Ra)を測定した。その結果、Raは2.81μmであった。Example 5
In the pulse laser irradiation, a pulse laser was applied to the glass substrate in the same manner as in Example 4 except that the average output at the processing point was 1.1 W, the moving distance in the y direction was 10 μm, and the scanning speed was changed to 50 mm / second Was irradiated. And the arithmetic mean roughness (Ra) of the location irradiated with the pulse laser was measured like Example 4. As a result, Ra was 2.81 μm.
表面粗さを測定した後、実施例2と同様にしてガラス基材の表面にめっき皮膜を形成させた。その結果、パルスレーザーを照射した領域にのみ選択的にめっき皮膜が形成された。そして、実施例1と同様にして密着性試験を行ったところ、めっき皮膜はガラスとともに剥がれた。 After measuring the surface roughness, a plating film was formed on the surface of the glass substrate in the same manner as in Example 2. As a result, a plating film was selectively formed only in the region irradiated with the pulse laser. And when the adhesiveness test was done like Example 1, the plating film peeled off with glass.
比較例1
「触媒失活処理」及び「置換Auめっき処理」を行わなかった以外は実施例1と同様にしてめっき品を得て、その表面をマイクロスコープで観察した。得られた画像を図5に示す。図5の31はパルスレーザーを照射した箇所に形成されたNiめっき皮膜であり、32はガラス基材表面のパルスレーザーを照射していない箇所に形成されたNiめっき皮膜である。図5に示されるように、「触媒失活処理」又は「触媒除去処理」のいずれかを行わなければガラス基材の全面にめっき皮膜が形成された。また、パルスレーザーを照射していない箇所に形成されたNiめっき皮膜は、セロハンテープで容易に剥がれた。Comparative Example 1
A plated product was obtained in the same manner as in Example 1 except that “catalyst deactivation treatment” and “substitution Au plating treatment” were not performed, and the surface thereof was observed with a microscope. The obtained image is shown in FIG.
比較例2
パルスレーザーの照射において、加工点での平均出力を1W、y方向への移動距離を10μm、走査速度を300mm/秒に変えた以外は実施例4と同様にしてガラス基材にパルスレーザーを照射した。そして、実施例4と同様にしてレーザーが照射された箇所の算術平均粗さ(Ra)を測定した。その結果、Raは0.03μmであった。Comparative Example 2
In the pulse laser irradiation, the glass substrate was irradiated with the pulse laser in the same manner as in Example 4 except that the average output at the processing point was 1 W, the moving distance in the y direction was 10 μm, and the scanning speed was changed to 300 mm / second did. And the arithmetic mean roughness (Ra) of the location irradiated with the laser was measured like Example 4. FIG. As a result, Ra was 0.03 μm.
表面粗さを測定した後、実施例2と同様にしてガラスの表面にめっき皮膜を形成させた。その結果、パルスレーザーを照射した領域にのみ選択的にめっき皮膜が形成されていたが、そのめっき皮膜はセロハンテープで容易に剥がすことができるものであった。 After measuring the surface roughness, a plating film was formed on the surface of the glass in the same manner as in Example 2. As a result, a plating film was selectively formed only in the region irradiated with the pulse laser, but the plating film could be easily peeled off with a cellophane tape.
1 ガラス基材
2 置換Auめっき皮膜
31 パルスレーザーを照射した箇所に形成されたNiめっき皮膜
32 ガラス基材表面のパルスレーザーを照射していない箇所に形成されたNiめっき皮膜DESCRIPTION OF
Claims (4)
前記ガラス基材の表面の一部の領域にパルスレーザーを照射する第1工程と、
前記ガラス基材の表面に無電解めっき触媒を付着させる第2工程と、
前記触媒を失活させる化合物又は前記触媒を除去する化合物を含有する液に前記ガラス基材を接触させて、前記パルスレーザーが照射されていない箇所に付着した前記触媒を選択的に失活させるか、又は前記触媒を選択的に除去する第3工程と、
第3工程の後に無電解めっきを行い、前記パルスレーザーを照射した領域にのみ選択的にめっき皮膜を形成する第4工程とを備え、
前記パルスレーザーの、波長が100〜12000nm、加工点での平均出力が0.01〜1000W、パルス幅が1×10−18〜1×10−4秒、周波数が1kHz〜1000MHzであり、
前記触媒が、パラジウム(Pd)、銀(Ag)、銅(Cu)、ニッケル(Ni)、アルミニウム(Al)、鉄(Fe)、コバルト(Co)、亜鉛(Zn)、金(Au)、白金(Pt)、スズ(Sn)からなる群から選択される少なくとも1種の金属元素を含み、
前記触媒を失活させる化合物が、硫黄化合物であり、かつ
前記触媒を除去する化合物が、前記金属とキレート錯体を形成するキレート化合物であることを特徴とするめっき品の製造方法。 A method for producing a plated product in which a plating film pattern is formed on the surface of a glass substrate;
A first step of irradiating a part of the surface of the glass substrate with a pulsed laser;
A second step of attaching an electroless plating catalyst to the surface of the glass substrate;
Whether the glass substrate is brought into contact with a liquid containing a compound that deactivates the catalyst or a compound that removes the catalyst, and the catalyst adhering to a portion not irradiated with the pulse laser is selectively deactivated. Or a third step of selectively removing the catalyst;
A fourth step of performing electroless plating after the third step and selectively forming a plating film only in the region irradiated with the pulse laser;
The pulse laser has a wavelength of 100 to 12000 nm, an average output at a processing point of 0.01 to 1000 W, a pulse width of 1 × 10 −18 to 1 × 10 −4 seconds, and a frequency of 1 kHz to 1000 MHz,
The catalyst is palladium (Pd), silver (Ag), copper (Cu), nickel (Ni), aluminum (Al), iron (Fe), cobalt (Co), zinc (Zn), gold (Au), platinum. (Pt), containing at least one metal element selected from the group consisting of tin (Sn),
Compounds to deactivate the catalyst, a sulfur compound, and a compound of removing the catalyst, method of manufacturing a plated article, characterized in that the chelating compound to form a metal chelate complex.
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