JP6260261B2 - Pulse drive and gate drive circuit using pulse transformer - Google Patents

Pulse drive and gate drive circuit using pulse transformer Download PDF

Info

Publication number
JP6260261B2
JP6260261B2 JP2013266257A JP2013266257A JP6260261B2 JP 6260261 B2 JP6260261 B2 JP 6260261B2 JP 2013266257 A JP2013266257 A JP 2013266257A JP 2013266257 A JP2013266257 A JP 2013266257A JP 6260261 B2 JP6260261 B2 JP 6260261B2
Authority
JP
Japan
Prior art keywords
winding
resin case
pulse transformer
gate drive
primary
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2013266257A
Other languages
Japanese (ja)
Other versions
JP2015122912A (en
Inventor
淳也 矢野
淳也 矢野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Meidensha Corp
Original Assignee
Meidensha Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Meidensha Corp filed Critical Meidensha Corp
Priority to JP2013266257A priority Critical patent/JP6260261B2/en
Publication of JP2015122912A publication Critical patent/JP2015122912A/en
Application granted granted Critical
Publication of JP6260261B2 publication Critical patent/JP6260261B2/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Landscapes

  • Insulating Of Coils (AREA)
  • Inverter Devices (AREA)

Description

本発明は、高絶縁パルストランスおよび高絶縁パルストランスを用いたゲート駆動回路に関する。   The present invention relates to a high-insulation pulse transformer and a gate driving circuit using the high-insulation pulse transformer.

図7は、インバータ1相分の回路構成を示すブロック図である。図7に示すように、直流電圧Edc間にスイッチング素子(例えば、IGBT)s1,s2が直列接続されている。このスイッチング素子s1,s2は、ゲート駆動回路1a,1bによりそれぞれON,OFF制御される。このゲート駆動回路1a,1bには、それぞれパルストランス4a,4bが設けられ、パルストランス4a,4bの1次側巻線には高周波電源2が接続される。また、制御部3により、ゲート駆動回路1a,1bがそれぞれ制御される。   FIG. 7 is a block diagram showing a circuit configuration for one phase of the inverter. As shown in FIG. 7, switching elements (for example, IGBTs) s1 and s2 are connected in series between the DC voltage Edc. The switching elements s1 and s2 are ON / OFF controlled by the gate drive circuits 1a and 1b, respectively. The gate drive circuits 1a and 1b are provided with pulse transformers 4a and 4b, respectively, and a high-frequency power source 2 is connected to primary windings of the pulse transformers 4a and 4b. The gate drive circuits 1a and 1b are controlled by the control unit 3, respectively.

ゲート駆動回路1a,1bの電位は、スイッチング素子s2のオン・オフによりゼロとEdcを往復する。このため、ゲート駆動回路1a,1bと高周波電源2とを絶縁する必要があり、スイッチング素子s1,s2に印加される電圧に対し、十分な絶縁能力が要求される。ゲート駆動回路1a,1b用の電源は図7に示すように、高周波電源2が使用されることが多く、パルストランス4a,4bが電源部に使用されるのが一般的である。ゲート駆動回路1a,1bはコネクタ基板(プリント基板)上で構成されることが一般的であるため、通常、パルストランス4a,4bもコネクタ基板上に配置される。   The potentials of the gate drive circuits 1a and 1b reciprocate between zero and Edc by turning on / off the switching element s2. For this reason, it is necessary to insulate the gate drive circuits 1a and 1b and the high-frequency power source 2 from each other, and a sufficient insulation capability is required for the voltage applied to the switching elements s1 and s2. As shown in FIG. 7, a high-frequency power source 2 is often used as the power source for the gate drive circuits 1a and 1b, and the pulse transformers 4a and 4b are generally used for the power source unit. Since the gate drive circuits 1a and 1b are generally configured on a connector substrate (printed substrate), the pulse transformers 4a and 4b are also usually disposed on the connector substrate.

図8は、3レベルインバータの1相分の回路構成図である。図8に示すように、3レベルインバータの主回路は、第1キャパシタC1と第2キャパシタC2が直列接続され、第1キャパシタC1の正極端と第2キャパシタC2の負極端との間にスイッチング素子s1〜s4が順次直列接続される。スイッチング素子s1,s2の共通接続点と、スイッチング素子s3,s4の共通接続点との間にダイオードD1,D2が直列接続される。第1,第2キャパシタC1,C2の共通接続点とダイオードD1,D2の共通接続点が接続される。また、スイッチング素子s2,s3の共通接続点が出力端子となる。   FIG. 8 is a circuit configuration diagram for one phase of the three-level inverter. As shown in FIG. 8, the main circuit of the three-level inverter includes a first capacitor C1 and a second capacitor C2 connected in series, and a switching element between the positive terminal of the first capacitor C1 and the negative terminal of the second capacitor C2. s1 to s4 are sequentially connected in series. Diodes D1 and D2 are connected in series between the common connection point of switching elements s1 and s2 and the common connection point of switching elements s3 and s4. A common connection point of the first and second capacitors C1 and C2 and a common connection point of the diodes D1 and D2 are connected. The common connection point between the switching elements s2 and s3 is an output terminal.

このような主回路の場合、スイッチング素子s1〜s4が4つあるため、ゲート駆動回路1a〜1dもスイッチング素子と同数(4つ)必要となる。   In the case of such a main circuit, since there are four switching elements s1 to s4, the same number (four) of gate drive circuits 1a to 1d as the switching elements are required.

実開平04−52720号公報Japanese Utility Model Publication No. 04-52720 実開平05−36815号公報Japanese Utility Model Publication No. 05-36815 特開2002−343654号公報JP 2002-343654 A

しかしながら、パルストランス4a〜4dはコネクタ基板上に配置されているため、パルストランスの1次側(高周波電源2側)と2次側(ゲート駆動回路1a〜1d側)との絶縁を確保する必要がある。そのため、1次側と2次側間の沿面距離を確保する必要があり、パルストランスが大型化してしまっていた。また、マルチレベルインバータのような複数のスイッチング素子を有する回路では、スイッチング素子と同数のゲート駆動回路が必要となるため、ゲート駆動回路および装置全体の小型化,低コスト化の障害となる。   However, since the pulse transformers 4a to 4d are arranged on the connector board, it is necessary to ensure insulation between the primary side (high frequency power supply 2 side) and the secondary side (gate drive circuits 1a to 1d side) of the pulse transformer. There is. For this reason, it is necessary to secure a creepage distance between the primary side and the secondary side, and the pulse transformer has been enlarged. In addition, since a circuit having a plurality of switching elements such as a multilevel inverter requires the same number of gate drive circuits as the switching elements, it becomes an obstacle to miniaturization and cost reduction of the gate drive circuit and the entire apparatus.

以上示したようなことから、パルストランスにおいて、パルストランスの1次側(高周波電源側)と2次側(ゲート駆動回路側)との絶縁を確保すると共に、パルストランスの小型化を図ることが課題となる。   As described above, in the pulse transformer, it is possible to secure insulation between the primary side (high-frequency power source side) and the secondary side (gate drive circuit side) of the pulse transformer and to reduce the size of the pulse transformer. It becomes a problem.

本発明は、前記従来の問題に鑑み、案出されたもので、その一態様は、2つのスイッチング素子を駆動制御するゲート駆動回路用のパルストランスであって、2つの1次巻線と2つの2次巻線を有するトランス本体を樹脂ケース内に収納し、1次巻線の端部と2次巻線の端部とを樹脂ケースの対向する面からそれぞれ露出させ、絶縁樹脂を樹脂ケース内に充填して硬化し、前記2つの1次巻線は、一方の巻線の一端部と他方の巻線の一端部とをコネクタ基板で短絡させ、一方の巻線の他端部と他方の巻線の他端部とをコネクタにより高周波電源と接続したことを特徴とする。   The present invention has been devised in view of the above-described conventional problems, and one aspect thereof is a pulse transformer for a gate drive circuit that drives and controls two switching elements, and includes two primary windings and 2 A transformer body having two secondary windings is housed in a resin case, the ends of the primary winding and the ends of the secondary winding are exposed from the opposing surfaces of the resin case, and the insulating resin is placed in the resin case. The two primary windings are short-circuited with one end of one winding and the other end of the other winding with a connector board, and the other end of one winding and the other are wound. The other end of the winding is connected to a high frequency power source by a connector.

また、その一態様として、前記樹脂ケースは、樹脂ケースから露出した1次巻線の端部と2次巻線の端部との間に凹凸が形成されたことを特徴とする。   Further, as one aspect thereof, the resin case is characterized in that irregularities are formed between the end portion of the primary winding and the end portion of the secondary winding exposed from the resin case.

また、他の態様として、2つのスイッチング素子を駆動制御するゲート駆動回路用のパルストランスであって、2つの1次巻線と2つの2次巻線を有するトランス本体とコネクタ基板とを樹脂ケース内に収納し、2つの2次巻線の端部を樹脂ケースから露出させ、絶縁樹脂を樹脂ケース内に充填して硬化し、前記2つの1次巻線は、一方の巻線の一端部と他方の巻線の一端部とをコネクタ基板内で短絡させ、一方の巻線の他端部と他方の巻線の他端部とをコネクタにより高周波電源と接続したことを特徴とする。   According to another aspect, there is provided a pulse transformer for a gate drive circuit that drives and controls two switching elements, wherein a transformer body having two primary windings and two secondary windings and a connector substrate are connected to a resin case. And the ends of the two secondary windings are exposed from the resin case, the insulating resin is filled in the resin case and cured, and the two primary windings are one end of one of the windings. And one end of the other winding are short-circuited in the connector substrate, and the other end of one winding and the other end of the other winding are connected to a high-frequency power source by a connector.

本発明によれば、パルストランスにおいて、パルストランスの1次側(高周波電源側)と2次側(ゲート駆動回路側)との絶縁を確保すると共に、パルストランスの小型化を図ることが可能となる。   According to the present invention, in the pulse transformer, it is possible to secure insulation between the primary side (high frequency power supply side) and the secondary side (gate drive circuit side) of the pulse transformer and to reduce the size of the pulse transformer. Become.

実施形態1におけるパルストランスを示す斜視図。FIG. 2 is a perspective view showing a pulse transformer in the first embodiment. 実施形態1におけるパルストランスを用いたゲート駆動回路を示すブロック図。FIG. 2 is a block diagram showing a gate drive circuit using a pulse transformer in the first embodiment. パルストランスの巻線構造を示す概略図。Schematic which shows the coil | winding structure of a pulse transformer. 2つの1次巻線を短絡した状態のパルストランスの巻線構造を示す概略図。Schematic which shows the winding structure of the pulse transformer of the state which short-circuited two primary windings. 実施形態2におけるパルストランスを示す斜視図。FIG. 6 is a perspective view showing a pulse transformer in the second embodiment. 実施形態3におけるパルストランスを示す側面図。FIG. 9 is a side view showing a pulse transformer in the third embodiment. インバータ1相分の回路構成を示すブロック図。The block diagram which shows the circuit structure for 1 phase of inverters. 3レベルインバータ1相分の回路構成を示すブロック図。The block diagram which shows the circuit structure for 3 levels inverter 1 phase.

以下、本願発明におけるパルストランスの実施形態1〜3を図1〜図6に基づいて詳細に説明する。   Hereinafter, the first to third embodiments of the pulse transformer according to the present invention will be described in detail with reference to FIGS.

[実施形態1]
図1は、本実施形態1におけるパルストランス4を示す斜視図である。また、図2にパルストランス4を用いたゲート駆動回路を示す。本実施形態1では図7,図8に示すような2つのスイッチング素子s1,s2を駆動するゲート駆動回路およびゲート駆動回路に用いられるパルストランスを前提としている。
[Embodiment 1]
FIG. 1 is a perspective view showing a pulse transformer 4 according to the first embodiment. FIG. 2 shows a gate drive circuit using the pulse transformer 4. The first embodiment is premised on a gate drive circuit for driving two switching elements s1 and s2 as shown in FIGS. 7 and 8 and a pulse transformer used for the gate drive circuit.

図2に示すように、高周波電源2から出力された電流は、パルストランス4の1次巻線に印加され、2次巻線に誘起する電圧が電源生成部5a,5bに出力される。この電源生成部5a,5bにより各ゲート駆動回路の電源が生成される。   As shown in FIG. 2, the current output from the high-frequency power source 2 is applied to the primary winding of the pulse transformer 4, and the voltage induced in the secondary winding is output to the power generation units 5a and 5b. The power generators 5a and 5b generate power for each gate drive circuit.

ゲート信号生成部7a,7bから出力された信号は、光送受信部6a,6bを介してゲート信号指令部8a,8bに出力され、ゲート信号指令部8a,8bから主回路のスイッチング素子s1,s2にゲート信号が出力される。   The signals output from the gate signal generation units 7a and 7b are output to the gate signal command units 8a and 8b via the optical transmission / reception units 6a and 6b, and the switching elements s1 and s2 of the main circuit are output from the gate signal command units 8a and 8b. A gate signal is output to

ここで、高周波電源2とパルストランス4の2次側,ゲート信号生成部7aと光送受信部6a,ゲート信号生成部7aと光送受信部6bと、の間は、絶縁がとられている。また、図2に示すように、コネクタ基板11内において、光送受信部6a,電源生成部5a,ゲート信号指令部8a側(すなわち、スイッチング素子s1のゲート駆動回路側)と、光送受信部6b,電源生成部5b,ゲート信号指令部8b側(すなわち、スイッチング素子s2のゲート駆動回路側)と、の間も絶縁が取られている。   Here, the secondary side of the high frequency power source 2 and the pulse transformer 4, the gate signal generation unit 7a and the optical transmission / reception unit 6a, and the gate signal generation unit 7a and the optical transmission / reception unit 6b are insulated. In addition, as shown in FIG. 2, in the connector substrate 11, the optical transceiver 6a, the power generator 5a, the gate signal command unit 8a side (that is, the gate drive circuit side of the switching element s1), the optical transceiver 6b, Insulation is also taken between the power generation unit 5b and the gate signal command unit 8b side (that is, the gate drive circuit side of the switching element s2).

パルストランス4は、コア,ボビンに1次巻線12,13,2次巻線14,15を巻装し、トランス本体を構成する。このトランス本体を樹脂ケース10内に収納し、絶縁樹脂を樹脂ケース10内に充填し、硬化して固着させる。   The pulse transformer 4 includes a primary body 12 and 13 and secondary windings 14 and 15 wound around a core and a bobbin to constitute a transformer body. The transformer main body is accommodated in the resin case 10, and an insulating resin is filled in the resin case 10 and cured and fixed.

このように、トランス本体を樹脂ケース10内に収納し、絶縁樹脂を樹脂ケース10内に充填し、硬化して固着させることにより、樹脂充填内には沿面距離が発生しない。そのため、高電圧印加時に発生する部分放電に対する絶縁性を高めることができる。   As described above, the transformer main body is accommodated in the resin case 10, the insulating resin is filled in the resin case 10, and cured and fixed, so that a creepage distance does not occur in the resin filling. Therefore, it is possible to improve insulation against partial discharge that occurs when a high voltage is applied.

ここで、図3に示すように、本実施形態1では、2つのスイッチング素子s1,s2を駆動できるように、2次巻線として2つの巻線14,15を設けている。また、1次巻線も2つの巻線12,13を設けている。1次巻線の端部12a,12b,13a,13bと2次巻線の端部14a,14b,15a,15bはそれぞれ外部出力ピンと接続し、樹脂ケース10から露出させている。ここで、1次巻線12,13の端部12a,12b,13a,13bは樹脂ケース10のコネクタ基板11側、2次巻線の端部14a,14b,15a,15bは樹脂ケース10のコネクタ基板11と対向する面から露出している。   Here, as shown in FIG. 3, in the first embodiment, two windings 14 and 15 are provided as secondary windings so that the two switching elements s1 and s2 can be driven. The primary winding is also provided with two windings 12 and 13. The primary winding ends 12 a, 12 b, 13 a, 13 b and the secondary winding ends 14 a, 14 b, 15 a, 15 b are respectively connected to external output pins and exposed from the resin case 10. Here, the end portions 12a, 12b, 13a and 13b of the primary windings 12 and 13 are on the connector substrate 11 side of the resin case 10, and the end portions 14a, 14b, 15a and 15b of the secondary winding are connectors on the resin case 10. It is exposed from the surface facing the substrate 11.

このように、1次巻線の端部12a,12b,13a,13bと、2次巻線の端部14a,14b,15a,15bと、を樹脂ケース10の対向する面から露出させることにより、1次巻線12,13−2次巻線14,15間,2次巻線14−2次巻線15間(本実施形態1の場合、2次巻線14−2次巻線15間にもEdcの電圧が印加される)の絶縁距離を確保し、高電圧印加時に発生する部分放電に対する絶縁性を高めている。   Thus, by exposing the end portions 12a, 12b, 13a, 13b of the primary winding and the end portions 14a, 14b, 15a, 15b of the secondary winding from the opposing surfaces of the resin case 10, Between the primary windings 12 and 13 and the secondary windings 14 and 15 and between the secondary winding 14 and the secondary winding 15 (in the case of the first embodiment, between the secondary winding 14 and the secondary winding 15 (Edc voltage is also applied), and the insulation against partial discharge generated when a high voltage is applied is enhanced.

コネクタ11aを備えたコネクタ基板11は、図4に示すように、1次巻線の端部12bと13aとを短絡させる。高周波電源2に接続されたコネクタ11aは、1次巻線の端部12aと13bに接続される。組立時には、コネクタ11aを挿入するだけで高周波電源2と接続できる。   The connector board 11 provided with the connector 11a short-circuits the end portions 12b and 13a of the primary winding as shown in FIG. The connector 11a connected to the high frequency power source 2 is connected to the ends 12a and 13b of the primary winding. At the time of assembly, it can be connected to the high-frequency power source 2 simply by inserting the connector 11a.

以上示したように、本実施形態1におけるパルストランス4のように、1次巻線の端部12a,12b,13a,13bと2次巻線の端部14a,14b,15a,15bを樹脂ケース10の対向する面から露出させて沿面距離を伸ばし、絶縁樹脂を樹脂ケース10内に充填することにより、高電圧印加時に発生する部分放電に対する絶縁性を高めることが可能となる。   As described above, the end portions 12a, 12b, 13a, 13b of the primary winding and the end portions 14a, 14b, 15a, 15b of the secondary winding are connected to the resin case as in the pulse transformer 4 in the first embodiment. By extending the creeping distance by exposing from 10 opposing surfaces and filling the resin case 10 with an insulating resin, it becomes possible to improve the insulation against partial discharge generated when a high voltage is applied.

また、1次巻線12、13と高周波電源2との接続にコネクタ11aを用い、一次巻線12,13をコネクタ基板11で短絡することにより、高絶縁の電源をコネクタ基板11に搭載することができ、ゲート駆動回路の簡易化,ユニットの小型化を実現できる。また、コネクタ11aを挿入するだけで、1次巻線12,13と高周波電源2とを接続することが可能となる。   In addition, a connector 11a is used to connect the primary windings 12 and 13 and the high-frequency power source 2, and the primary windings 12 and 13 are short-circuited by the connector substrate 11 so that a highly insulated power source is mounted on the connector substrate 11. Simplify the gate drive circuit and downsize the unit. Moreover, it becomes possible to connect the primary windings 12 and 13 and the high frequency power supply 2 only by inserting the connector 11a.

また、本実施形態1のパルストランスをゲート駆動回路に適用することにより、信頼性が高く小型,高絶縁の高電圧,大容量の電力変換装置を提供することが可能となる。   In addition, by applying the pulse transformer of the first embodiment to a gate drive circuit, it is possible to provide a highly reliable, compact, highly insulated high voltage, large capacity power converter.

また、本実施形態1によれば、図8に示すようなマルチレベル電力変換装置のように、電位がスイッチングで変動する場合でも、2ゲート分の回路構成を小型のパルストランスで提供することが可能となる。   Further, according to the first embodiment, a circuit configuration for two gates can be provided by a small pulse transformer even when the potential fluctuates due to switching as in the multilevel power conversion device as shown in FIG. It becomes possible.

[実施形態2]
図5は、本実施形態2におけるパルストランス4を示す斜視図である。本実施形態2は、1次巻線12,13の端部12a,12b,13a,13bとコネクタ基板11を樹脂ケース10内に収納し、1次巻線12,13の端部12a,12b,13a,13bを樹脂ケース10から露出させないようにしたものである。その他は実施形態1と同様である。
[Embodiment 2]
FIG. 5 is a perspective view showing the pulse transformer 4 according to the second embodiment. In the second embodiment, the end portions 12a, 12b, 13a, 13b of the primary windings 12, 13 and the connector board 11 are accommodated in the resin case 10, and the end portions 12a, 12b, 13 a and 13 b are not exposed from the resin case 10. Others are the same as in the first embodiment.

1次巻線の端部12bと13aとは、コネクタ基板11内で接続されているため、端部12b,13aを樹脂ケース10内に収納しても1次巻線12,13を直列接続することが可能である。また、1次巻線の端部12aと13bを樹脂ケース10内に収納してもコネクタ11aにより高周波電源2との接続が可能である。   Since the ends 12b and 13a of the primary winding are connected in the connector board 11, the primary windings 12 and 13 are connected in series even if the ends 12b and 13a are housed in the resin case 10. It is possible. Even if the ends 12a and 13b of the primary winding are housed in the resin case 10, the connector 11a can be connected to the high-frequency power source 2.

本実施形態2におけるパルストランス4によれば、1次巻線12,13の端部12a,12b,13a,13bを樹脂ケース10内に収納することにより、樹脂ケース10の沿面に沿って短絡電流が流れることが抑制される。そのため、沿面距離を伸ばすために樹脂ケース10を大型化する必要がなく、パルストランス4を小型化することが可能となる。また、実施形態1と同様の作用効果を奏する。   According to the pulse transformer 4 in the second embodiment, the end portions 12 a, 12 b, 13 a, 13 b of the primary windings 12, 13 are accommodated in the resin case 10, so that a short circuit current is generated along the creeping surface of the resin case 10. Is suppressed from flowing. Therefore, it is not necessary to increase the size of the resin case 10 in order to increase the creepage distance, and the pulse transformer 4 can be reduced in size. In addition, the same effects as those of the first embodiment are obtained.

[実施形態3]
図6は、本実施形態3におけるパルストランス4を示す側面図である。本実施形態3では、実施形態1と同様に、1次巻線,2次巻線の端部12a,12b,13a,13b,14a,14b,15a,15bが樹脂ケース10の外部に露出しているため、樹脂ケース10は沿面距離の絶縁規格を満足させる必要がある。
[Embodiment 3]
FIG. 6 is a side view showing the pulse transformer 4 according to the third embodiment. In the third embodiment, similarly to the first embodiment, the end portions 12a, 12b, 13a, 13b, 14a, 14b, 15a, and 15b of the primary winding and the secondary winding are exposed to the outside of the resin case 10. Therefore, the resin case 10 needs to satisfy the insulation standard for creepage distance.

本実施形態3では、図6に示すように、樹脂ケース10の側面(端部12a,12b,13a,13b,14a,14b,15a,15bが露出していない面)に凹凸16を形成している。これにより、1次巻線の端部12a,12b,13a,13b−2次巻線の端部14a,14b,15a,15b間の沿面距離を確保しながら、実施形態1よりもさらに、樹脂ケース10を小型化することが可能となる。   In the third embodiment, as shown in FIG. 6, the unevenness 16 is formed on the side surface (the surface where the end portions 12a, 12b, 13a, 13b, 14a, 14b, 15a, 15b are not exposed) of the resin case 10. Yes. As a result, the resin case further than the first embodiment while ensuring the creepage distances between the end portions 12a, 12b, 13a, 13b of the primary windings and the end portions 14a, 14b, 15a, 15b of the secondary windings. 10 can be reduced in size.

以上、本発明において、記載された具体例に対してのみ詳細に説明したが、本発明の技術思想の範囲で多彩な変形および修正が可能であることは、当業者にとって明白なことであり、このような変形および修正が特許請求の範囲に属することは当然のことである。   Although the present invention has been described in detail only for the specific examples described above, it is obvious to those skilled in the art that various changes and modifications are possible within the scope of the technical idea of the present invention. Such variations and modifications are naturally within the scope of the claims.

例えば、実施形態3では、樹脂ケース10の側面に凹凸16を形成したが、1次巻線の端部12a,12b,13a,13bと2次巻線の端部14a,14b,15a,15b間の沿面距離を長くすることができれば、凹凸を形成する箇所は側面でなくとも良い。   For example, in Embodiment 3, the unevenness 16 is formed on the side surface of the resin case 10, but between the end portions 12a, 12b, 13a, 13b of the primary winding and the end portions 14a, 14b, 15a, 15b of the secondary winding. As long as the creepage distance can be increased, the portion where the unevenness is formed need not be the side surface.

また、ゲート駆動回路からゲート信号を出力する主回路として、図7,図8を例にして示したが、主回路はこれに限らずスイッチング素子を2つ以上有していれば良い。   Further, although FIGS. 7 and 8 are shown as examples of the main circuit for outputting the gate signal from the gate drive circuit, the main circuit is not limited to this and may have two or more switching elements.

さらに、ゲート駆動回路の一例として図2を示したが、ゲート駆動回路にパルストランスを有していればこれ以外でも良い。   Furthermore, although FIG. 2 is shown as an example of the gate drive circuit, other than this may be used as long as the gate drive circuit has a pulse transformer.

4…パルストランス
10…樹脂ケース
11…コネクタ基板
11a…コネクタ
12,13…1次巻線
12a,12b,13a,13b…1次巻線の端部
14,15…2次巻線
14a,14b,15a,15b…2次巻線の端部
16…凹凸
4 ... Pulse transformer 10 ... Resin case 11 ... Connector substrate 11a ... Connector 12, 13 ... Primary winding 12a, 12b, 13a, 13b ... End of primary winding 14, 15 ... Secondary winding 14a, 14b, 15a, 15b ... the end of the secondary winding 16 ... irregularities

Claims (4)

2つのスイッチング素子を駆動制御するゲート駆動回路用のパルストランスであって、
2つの1次巻線と2つの2次巻線を有するトランス本体を樹脂ケース内に収納し、1次巻線の端部と2次巻線の端部とを樹脂ケースの対向する面からそれぞれ露出させ、絶縁樹脂を樹脂ケース内に充填して硬化し、
前記2つの1次巻線は、一方の巻線の一端部と他方の巻線の一端部とをコネクタ基板で短絡させ、一方の巻線の他端部と他方の巻線の他端部とをコネクタにより高周波電源と接続したことを特徴とするパルストランス。
A pulse transformer for a gate drive circuit that drives and controls two switching elements,
A transformer body having two primary windings and two secondary windings is housed in a resin case, and the end of the primary winding and the end of the secondary winding are respectively arranged from the opposing surfaces of the resin case. Expose, fill the resin case in the resin case and cure,
In the two primary windings, one end of one winding and one end of the other winding are short-circuited by a connector board, and the other end of one winding and the other end of the other winding A pulse transformer, characterized in that is connected to a high-frequency power source through a connector.
前記樹脂ケースは、
樹脂ケースから露出した1次巻線の端部と2次巻線の端部との間に凹凸が形成されたことを特徴とする請求項1記載のパルストランス。
The resin case is
2. The pulse transformer according to claim 1, wherein irregularities are formed between an end portion of the primary winding exposed from the resin case and an end portion of the secondary winding.
2つのスイッチング素子を駆動制御するゲート駆動回路用のパルストランスであって、
2つの1次巻線と2つの2次巻線を有するトランス本体とコネクタ基板とを樹脂ケース内に収納し、2つの2次巻線の端部を樹脂ケースから露出させ、絶縁樹脂を樹脂ケース内に充填して硬化し、
前記2つの1次巻線は、一方の巻線の一端部と他方の巻線の一端部とをコネクタ基板内で短絡させ、一方の巻線の他端部と他方の巻線の他端部とをコネクタにより高周波電源と接続したことを特徴とするパルストランス。
A pulse transformer for a gate drive circuit that drives and controls two switching elements,
A transformer body having two primary windings and two secondary windings and a connector board are housed in a resin case, the ends of the two secondary windings are exposed from the resin case, and the insulating resin is resin case Filled inside and cured,
In the two primary windings, one end of one winding and one end of the other winding are short-circuited in the connector board, and the other end of one winding and the other end of the other winding And a high frequency power supply connected by a connector.
請求項1〜3のうち何れか1項に記載のパルストランスを備え、
2つのスイッチング素子を駆動制御することを特徴とするゲート駆動回路。
The pulse transformer according to any one of claims 1 to 3,
A gate drive circuit characterized by controlling driving of two switching elements.
JP2013266257A 2013-12-25 2013-12-25 Pulse drive and gate drive circuit using pulse transformer Expired - Fee Related JP6260261B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2013266257A JP6260261B2 (en) 2013-12-25 2013-12-25 Pulse drive and gate drive circuit using pulse transformer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2013266257A JP6260261B2 (en) 2013-12-25 2013-12-25 Pulse drive and gate drive circuit using pulse transformer

Publications (2)

Publication Number Publication Date
JP2015122912A JP2015122912A (en) 2015-07-02
JP6260261B2 true JP6260261B2 (en) 2018-01-17

Family

ID=53534065

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2013266257A Expired - Fee Related JP6260261B2 (en) 2013-12-25 2013-12-25 Pulse drive and gate drive circuit using pulse transformer

Country Status (1)

Country Link
JP (1) JP6260261B2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110971127B (en) * 2018-09-29 2021-07-13 中车株洲电力机车研究所有限公司 DC-DC converter and signal modulation method thereof

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55133517A (en) * 1979-04-05 1980-10-17 Tohoku Metal Ind Ltd Manufacture of pulse transformer
JPH09306682A (en) * 1996-05-15 1997-11-28 Matsushita Electric Works Ltd Electrodeless discharge lamp lighting device
JP2000208341A (en) * 1999-01-14 2000-07-28 Matsushita Electric Ind Co Ltd Thin transformer
JP3623181B2 (en) * 2001-08-27 2005-02-23 オリジン電気株式会社 High voltage semiconductor switch device and high voltage generator
JP2007305833A (en) * 2006-05-12 2007-11-22 Nec Tokin Corp Common mode choke coil
JP2009260067A (en) * 2008-04-17 2009-11-05 Nissan Diesel Motor Co Ltd Electric storage device

Also Published As

Publication number Publication date
JP2015122912A (en) 2015-07-02

Similar Documents

Publication Publication Date Title
JP6452810B2 (en) Substrate type noise filter and electronic equipment
WO2011154993A1 (en) Isolation transformer and power source device
WO2013157098A1 (en) Noise filter device
WO2016143527A1 (en) Isolated switching power source
WO2014103518A1 (en) Dc-dc converter
US10951128B2 (en) Main circuit wiring member and power conversion device
KR101604325B1 (en) A transformer and high voltage power supply apparatus having the same
US11336184B2 (en) Power converter
US20090167473A1 (en) Transformer structure
JP2013106475A (en) System connection inverter
JP6260261B2 (en) Pulse drive and gate drive circuit using pulse transformer
JP4860517B2 (en) Power module
JP6253808B1 (en) Wireless power transmission / reception system, power conversion device including the same, and power conversion method
JP5247788B2 (en) Slim High Voltage Transformer (SLIMTYPEHIGHVOLTAGETRANSFORMER)
JP5490775B2 (en) Power module
US20180013356A1 (en) Electric power conversion device
JP2016144238A (en) Electric power conversion system
JP2009302158A (en) Voltage conversion device
JP2010213480A (en) Power converter of fuel cell
JP2020155350A (en) connector
KR101654319B1 (en) Unificated module-type current converter
JP6965714B2 (en) Gate drive circuit
JP2016119752A (en) Power conversion device
JP5095231B2 (en) Power module
JP5705263B2 (en) Switching power supply

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20161104

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20170920

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20170926

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20171107

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20171114

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20171127

R150 Certificate of patent or registration of utility model

Ref document number: 6260261

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

LAPS Cancellation because of no payment of annual fees