JP6231324B2 - Protection circuit board - Google Patents

Protection circuit board Download PDF

Info

Publication number
JP6231324B2
JP6231324B2 JP2013164517A JP2013164517A JP6231324B2 JP 6231324 B2 JP6231324 B2 JP 6231324B2 JP 2013164517 A JP2013164517 A JP 2013164517A JP 2013164517 A JP2013164517 A JP 2013164517A JP 6231324 B2 JP6231324 B2 JP 6231324B2
Authority
JP
Japan
Prior art keywords
circuit board
electrode
insulating substrate
electrodes
heating element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2013164517A
Other languages
Japanese (ja)
Other versions
JP2015035280A (en
Inventor
裕治 古内
裕治 古内
貴史 藤畑
貴史 藤畑
幸市 向
幸市 向
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Dexerials Corp
Original Assignee
Dexerials Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dexerials Corp filed Critical Dexerials Corp
Priority to JP2013164517A priority Critical patent/JP6231324B2/en
Publication of JP2015035280A publication Critical patent/JP2015035280A/en
Application granted granted Critical
Publication of JP6231324B2 publication Critical patent/JP6231324B2/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Landscapes

  • Fuses (AREA)

Description

本発明は、過充電、過放電等の異常時に、電流経路を遮断する保護素子が実装された保護回路基板に関する。   The present invention relates to a protection circuit board on which a protection element that cuts off a current path in the event of an abnormality such as overcharge or overdischarge.

充電して繰り返し利用することのできる二次電池の多くは、バッテリパックに加工されてユーザに提供される。特に重量エネルギ密度の高いリチウムイオン二次電池においては、ユーザ及び電子機器の安全を確保するために、一般的に、過充電保護、過放電保護等のいくつもの保護回路をバッテリパックに内蔵し、所定の場合にバッテリパックの出力を遮断する機能を有している。   Many secondary batteries that can be charged and used repeatedly are processed into battery packs and provided to users. In particular, in lithium ion secondary batteries with high weight energy density, in order to ensure the safety of users and electronic devices, in general, several protection circuits such as overcharge protection and overdischarge protection are built in the battery pack, It has a function of shutting off the output of the battery pack in a predetermined case.

この種の保護素子には、バッテリパックに内蔵されたＦＥＴスイッチを用いて出力のＯＮ／ＯＦＦを行うことにより、バッテリパックの過充電保護又は過放電保護動作を行うものがある。しかしながら、何らかの原因でＦＥＴスイッチが短絡破壊した場合、雷サージ等が印加されて瞬間的な大電流が流れた場合、あるいはバッテリセルの寿命によって出力電圧が異常に低下したり、逆に過大異常電圧を出力した場合であっても、バッテリパックや電子機器は、発火等の事故から保護されなければならない。そこで、このような想定し得るいかなる異常状態においても、バッテリセルの出力を安全に遮断するために、外部からの信号によって電流経路を遮断する機能を有するヒューズ素子からなる保護素子が用いられている。   This type of protection element includes an overcharge protection or overdischarge protection operation of the battery pack by turning on / off the output using an FET switch built in the battery pack. However, when the FET switch is short-circuited for some reason, when a lightning surge or the like is applied and an instantaneous large current flows, the output voltage drops abnormally due to the life of the battery cell, or conversely an excessively abnormal voltage Even when a battery pack is output, battery packs and electronic devices must be protected from accidents such as fire. Therefore, in order to safely shut off the output of the battery cell in any possible abnormal state, a protection element made of a fuse element having a function of cutting off the current path by an external signal is used. .

図１９（Ａ）及び図１９（Ｂ）に示すように、このようなリチウムイオン二次電池等向けの保護回路の保護素子８０としては、電流経路上に接続された第１及び第２の電極８１，８２間に亘って可溶導体８３を接続して電流経路の一部をなし、この電流経路上の可溶導体８３を、過電流による自己発熱、あるいは保護素子８０内部に設けた発熱体８４によって溶断するものが提案されている。   As shown in FIGS. 19A and 19B, the protective element 80 of the protective circuit for such a lithium ion secondary battery or the like includes the first and second electrodes connected on the current path. A fusible conductor 83 is connected between 81 and 82 to form part of the current path, and the fusible conductor 83 on the current path is self-heated due to overcurrent or a heating element provided inside the protection element 80. What is blown by H.84 is proposed.

具体的に、保護素子８０は、絶縁基板８５と、絶縁基板８５に積層され、絶縁部材８６に覆われた発熱体８４と、絶縁基板８５の両端に形成された第１、第２の電極８１，８２と、絶縁部材８６上に発熱体８４と重畳するように積層された発熱体引出電極８８と、両端が第１、第２の電極８１，８２にそれぞれ接続され、中央部が発熱体引出電極８８に接続された可溶導体８３とを備える。   Specifically, the protection element 80 includes an insulating substrate 85, a heating element 84 laminated on the insulating substrate 85 and covered with an insulating member 86, and first and second electrodes 81 formed on both ends of the insulating substrate 85. , 82, a heating element extraction electrode 88 laminated on the insulating member 86 so as to overlap the heating element 84, both ends are connected to the first and second electrodes 81, 82, respectively, and the central portion is the heating element extraction A soluble conductor 83 connected to the electrode 88.

保護素子８０は、過充電、過放電等の異常が検知されると、発熱体８４が通電されることにより発熱する。すると、この熱により可溶導体８３が溶融し、この溶融導体８３を発熱体引出電極８８に集めることにより、第１及び第２の電極８１，８２間の電流経路を遮断する。   When an abnormality such as overcharge or overdischarge is detected, the protection element 80 generates heat when the heating element 84 is energized. Then, the soluble conductor 83 is melted by this heat, and the molten conductor 83 is collected on the heating element extraction electrode 88, thereby interrupting the current path between the first and second electrodes 81 and 82.

特開２０１０−００３６６５号公報JP 2010-003665 A 特開２００４−１８５９６０号公報JP 2004-185960 A 特開２０１２−００３８７８号公報JP 2012-003878 A

保護素子８０は、第１、第２の電極８１，８２に設けられたハーフスルーホール９０，９１を介して絶縁基板８５の裏面に形成された第１、第２の接続端子９２，９３が、回路基板９５側に形成された第１、第２の接続電極９６，９７に接続されることにより実装される。これにより、回路基板９５に形成された第１、第２の接続電極９６，９７間にわたって接続された保護素子８０が電流経路の一部を構成する。   The protective element 80 includes first and second connection terminals 92 and 93 formed on the back surface of the insulating substrate 85 via half-through holes 90 and 91 provided in the first and second electrodes 81 and 82. Mounting is performed by connecting to the first and second connection electrodes 96 and 97 formed on the circuit board 95 side. Thereby, the protection element 80 connected across the first and second connection electrodes 96 and 97 formed on the circuit board 95 constitutes a part of the current path.

ところで、近年、各種電子機器の高容量化、高定格化に伴い、通電電流が高くなり、これに伴い、保護素子８０や回路基板９５自体の発熱を抑制する、あるいは放熱を促進する必要が生じている。このため、回路基板９５に形成する電極パターンを幅広かつ厚くし、また保護素子８０が実装される領域にダミー電極パターンを設け、熱容量の大きな電極パターンを多く形成することで放熱を促進するなどの対策が取られる傾向がある。   By the way, in recent years, along with the increase in capacity and rating of various electronic devices, the energization current becomes higher, and accordingly, it is necessary to suppress the heat generation of the protection element 80 and the circuit board 95 or to promote the heat dissipation. ing. For this reason, the electrode pattern formed on the circuit board 95 is widened and thickened, the dummy electrode pattern is provided in the region where the protection element 80 is mounted, and heat dissipation is promoted by forming many electrode patterns having a large heat capacity. There is a tendency to take measures.

しかし、保護素子８０は、過充電、過放電等の異常が検知されると速やかに可溶導体８３を溶融させて電流経路を遮断する必要があることから、発熱体の熱を優先的に可溶導体８３へ伝えることが求められる。したがって、保護素子８０は、発熱体８４の熱が第１、第２の電極８１，８２や第１、第２の接続端子９２，９３、あるいはダミー電極パターン等を介して周囲や回路基板９５側へ放熱されることは、可溶導体８３の速溶断性を阻害し、好ましくない。   However, since the protection element 80 needs to quickly melt the soluble conductor 83 and interrupt the current path when an abnormality such as overcharge or overdischarge is detected, the heat of the heating element can be given priority. It is required to be transmitted to the molten conductor 83. Therefore, in the protection element 80, the heat of the heating element 84 is surrounded by the first and second electrodes 81 and 82, the first and second connection terminals 92 and 93, the dummy electrode pattern, and the like and the circuit board 95 side. It is not preferable that the heat is dissipated to hinder the quick fusing property of the soluble conductor 83.

そこで、本発明は、発熱体の熱の放熱を抑えて保護素子の溶断特性を損なうことなく、回路基板に実装することができる保護回路基板を提供することを目的とする。   SUMMARY OF THE INVENTION An object of the present invention is to provide a protection circuit board that can be mounted on a circuit board without reducing heat dissipation of the heating element and without impairing the fusing characteristics of the protection element.

上述した課題を解決するために、本発明に係る保護回路基板は、回路基板と、上記回路基板上に実装される保護素子とを有する保護回路基板において、上記保護素子は、絶縁基板と、上記絶縁基板に形成された発熱体と、上記絶縁基板に積層された第１及び第２の電極と、上記絶縁基板の上記回路基板への実装面側の一側縁部に設けられ、上記第１の電極と連続する第１の接続端子と、上記実装面側の他側縁部に設けられ、上記第２の電極と連続する第２の接続端子と、上記第１及び第２の電極の間の電流経路上に設けられ、上記発熱体に電気的に接続された発熱体引出電極と、上記発熱体引出電極から上記第１及び第２の電極にわたって積層され、熱により溶断することにより、該第１の電極と該第２の電極との間の電流経路を遮断する可溶導体とを備え、上記回路基板は、上記保護素子が実装される領域内において、上記保護素子との接続電極を除き、上記保護素子の下側に電極パターンが設けられておらず、上記回路基板は、上記第１、第２の接続端子と接続される第１、第２の接続電極を有し、上記第１、第２の接続電極は、上記保護素子が実装される領域外において、上記絶縁基板の上記第１、第２の接続端子が設けられた側縁の幅以上の幅を有し、上記保護素子が実装される領域内において、上記絶縁基板の上記第１、第２の接続端子が設けられた側縁の幅より狭い幅を有するものである。
また、本発明に係る保護回路基板は、回路基板と、上記回路基板上に実装される保護素子とを有する保護回路基板において、上記保護素子は、絶縁基板と、上記絶縁基板に形成された発熱体と、上記絶縁基板に積層された第１及び第２の電極と、上記絶縁基板の上記回路基板への実装面側の一側縁部に設けられ、上記第１の電極と連続する第１の接続端子と、上記実装面側の他側縁部に設けられ、上記第２の電極と連続する第２の接続端子と、上記第１及び第２の電極の間の電流経路上に設けられ、上記発熱体に電気的に接続された発熱体引出電極と、上記発熱体引出電極から上記第１及び第２の電極にわたって積層され、熱により溶断することにより、該第１の電極と該第２の電極との間の電流経路を遮断する可溶導体とを備え、上記回路基板は、上記保護素子が実装される領域内において、上記保護素子との接続電極を除き、上記保護素子の下側に電極パターンが設けられておらず、上記回路基板は、上記保護素子が実装される領域外において、ダミー電極が形成されているものである。
また、本発明に係る保護回路基板は、回路基板と、上記回路基板上に実装される保護素子とを有する保護回路基板において、上記保護素子は、絶縁基板と、上記絶縁基板に形成された発熱体と、上記絶縁基板に積層された第１及び第２の電極と、上記絶縁基板の上記回路基板への実装面側の一側縁部に設けられ、上記第１の電極と連続する第１の接続端子と、上記実装面側の他側縁部に設けられ、上記第２の電極と連続する第２の接続端子と、上記第１及び第２の電極の間の電流経路上に設けられ、上記発熱体に電気的に接続された発熱体引出電極と、上記発熱体引出電極から上記第１及び第２の電極にわたって積層され、熱により溶断することにより、該第１の電極と該第２の電極との間の電流経路を遮断する可溶導体とを備え、上記回路基板は、上記保護素子が実装される領域内において、上記保護素子との接続電極を除き、上記保護素子の下側に電極パターンが設けられておらず、上記回路基板は、多層基板であり、上記保護素子の下側が、一又は複数層にわたって導電パターンが除去されているものである。 In order to solve the above-described problems, a protection circuit board according to the present invention includes a circuit board and a protection element mounted on the circuit board. The protection element includes an insulating substrate and the protection board. A heating element formed on the insulating substrate, first and second electrodes stacked on the insulating substrate, and provided on one side edge of the insulating substrate on the circuit board side, the first electrode A first connection terminal that is continuous with the first electrode, a second connection terminal that is provided on the other side edge of the mounting surface and is continuous with the second electrode, and between the first and second electrodes A heating element extraction electrode provided on the current path and electrically connected to the heating element, and laminated from the heating element extraction electrode to the first and second electrodes, and fusing by heat, Possible to interrupt the current path between the first electrode and the second electrode And a conductor, the circuit board, in the region where the protective device is mounted, except for the connection electrode of the protective element, the electrode pattern is provided on the lower side of the protective device Orazu, the circuit board Has first and second connection electrodes connected to the first and second connection terminals, and the first and second connection electrodes are outside the region where the protection element is mounted. The first and second connections of the insulating substrate have a width equal to or greater than the width of the side edge provided with the first and second connection terminals of the insulating substrate, and in the region where the protection element is mounted. It has a width narrower than the width of the side edge provided with the terminal .
The protective circuit board according to the present invention is a protective circuit board having a circuit board and a protective element mounted on the circuit board, wherein the protective element is an insulating substrate and heat generated on the insulating substrate. And first and second electrodes stacked on the insulating substrate, and a first edge that is provided on one side edge of the insulating substrate on the side of the mounting surface to the circuit board and that is continuous with the first electrode. Provided on the other side edge of the mounting surface side, provided on a current path between the second connection terminal continuous with the second electrode and the first and second electrodes. A heating element extraction electrode electrically connected to the heating element; and a layer extending from the heating element extraction electrode to the first and second electrodes, and fusing with heat, whereby the first electrode and the first electrode A fusible conductor that interrupts a current path between the two electrodes, and the circuit In the area where the protection element is mounted, the board is not provided with an electrode pattern on the lower side of the protection element except for the connection electrode with the protection element, and the circuit board is mounted with the protection element. A dummy electrode is formed outside the region to be formed.
The protective circuit board according to the present invention is a protective circuit board having a circuit board and a protective element mounted on the circuit board, wherein the protective element is an insulating substrate and heat generated on the insulating substrate. And first and second electrodes stacked on the insulating substrate, and a first edge that is provided on one side edge of the insulating substrate on the side of the mounting surface to the circuit board and that is continuous with the first electrode. Provided on the other side edge of the mounting surface side, provided on a current path between the second connection terminal continuous with the second electrode and the first and second electrodes. A heating element extraction electrode electrically connected to the heating element; and a layer extending from the heating element extraction electrode to the first and second electrodes, and fusing with heat, whereby the first electrode and the first electrode A fusible conductor that interrupts a current path between the two electrodes, and the circuit In the region where the protection element is mounted, the board is provided with no electrode pattern on the lower side of the protection element except for the connection electrode with the protection element, and the circuit board is a multilayer board, The conductive pattern is removed from the lower side of the protective element over one or more layers.

本発明によれば、回路基板の保護素子が実装される実装領域には、熱容量の大きな電極パターンが必要最小限の面積で形成されているため、保護素子の絶縁基板の裏面側からの放熱を抑制することができる。したがって、本発明によれば、発熱体の熱を効率よく可溶導体へ伝えることができ、過充電、過放電等の異常が検知されると速やかに可溶導体を溶融させて電流経路を遮断することができる。   According to the present invention, since the electrode pattern having a large heat capacity is formed in the necessary minimum area in the mounting area where the protection element of the circuit board is mounted, heat dissipation from the back surface side of the insulating substrate of the protection element is performed. Can be suppressed. Therefore, according to the present invention, the heat of the heating element can be efficiently transmitted to the soluble conductor, and when an abnormality such as overcharge or overdischarge is detected, the soluble conductor is melted quickly to interrupt the current path. can do.

（Ａ）は本発明が適用された保護回路基板の保護素子を示す平面図であり、（Ｂ）は保護回路基板のＡ−Ａ‘断面図である。(A) is a top view which shows the protection element of the protection circuit board to which this invention was applied, (B) is AA 'sectional drawing of a protection circuit board. 保護素子の裏面を示す裏面図である。It is a back view which shows the back surface of a protection element. 本発明が適用された保護回路基板の回路基板を示す平面図である。It is a top view which shows the circuit board of the protection circuit board to which this invention was applied. 比較例に係る回路基板を示す平面図である。It is a top view which shows the circuit board which concerns on a comparative example. 比較例に係る回路基板を示す平面図である。It is a top view which shows the circuit board which concerns on a comparative example. 本発明が適用された保護回路基板の回路基板を示す平面図である。It is a top view which shows the circuit board of the protection circuit board to which this invention was applied. 本発明が適用された保護回路基板の回路基板を示す平面図である。It is a top view which shows the circuit board of the protection circuit board to which this invention was applied. 比較例に係る回路基板を示す平面図である。It is a top view which shows the circuit board which concerns on a comparative example. 本発明が適用された保護回路基板の回路基板を示す平面図である。It is a top view which shows the circuit board of the protection circuit board to which this invention was applied. 比較例に係る回路基板を示す平面図である。It is a top view which shows the circuit board which concerns on a comparative example. 本発明が適用された保護回路基板の回路基板を示す平面図である。It is a top view which shows the circuit board of the protection circuit board to which this invention was applied. 比較例に係る回路基板を示す平面図である。It is a top view which shows the circuit board which concerns on a comparative example. 比較例に係る回路基板を示す平面図である。It is a top view which shows the circuit board which concerns on a comparative example. 本発明が適用された保護回路基板の回路基板を示す断面図である。It is sectional drawing which shows the circuit board of the protection circuit board to which this invention was applied. 本発明が適用された保護回路基板の回路基板及び比較例に係る回路基板を示す平面図である。It is a top view which shows the circuit board of the protection circuit board to which this invention was applied, and the circuit board which concerns on a comparative example. 本発明が適用された保護回路基板の回路基板の第２導電層を示す平面図である。It is a top view which shows the 2nd conductive layer of the circuit board of the protection circuit board to which this invention was applied. バッテリパックの回路図である。It is a circuit diagram of a battery pack. 保護素子の回路図である。It is a circuit diagram of a protection element. （Ａ）は本発明の参考例に係る保護回路基板の保護素子を示す平面図であり、（Ｂ）は保護回路基板の断面図である。(A) is a top view which shows the protection element of the protection circuit board based on the reference example of this invention, (B) is sectional drawing of a protection circuit board.

以下、本発明が適用された保護回路基板について、図面を参照しながら詳細に説明する。なお、本発明は、以下の実施形態のみに限定されるものではなく、本発明の要旨を逸脱しない範囲内において種々の変更が可能であることは勿論である。また、図面は模式的なものであり、各寸法の比率等は現実のものとは異なることがある。具体的な寸法等は以下の説明を参酌して判断すべきものである。また、図面相互間においても互いの寸法の関係や比率が異なる部分が含まれていることは勿論である。   Hereinafter, a protection circuit board to which the present invention is applied will be described in detail with reference to the drawings. It should be noted that the present invention is not limited to the following embodiments, and various modifications can be made without departing from the scope of the present invention. Further, the drawings are schematic, and the ratio of each dimension may be different from the actual one. Specific dimensions should be determined in consideration of the following description. Moreover, it is a matter of course that portions having different dimensional relationships and ratios are included between the drawings.

［保護回路基板］
本発明が適用された保護回路基板１は、図１に示すように、回路基板２と、回路基板２上に実装される保護素子３とを有する。この保護回路基板１は、例えばリチウムイオン二次電池のバッテリパックに内蔵され、電流経路の一部を構成するとともに、過充電、過放電等の異常が検知されると速やかに保護素子３の可溶導体１３を溶融させて電流経路を遮断する。 [Protection circuit board]
A protection circuit board 1 to which the present invention is applied includes a circuit board 2 and a protection element 3 mounted on the circuit board 2 as shown in FIG. The protection circuit board 1 is built in, for example, a battery pack of a lithium ion secondary battery, constitutes a part of a current path, and enables the protection element 3 to be quickly activated when an abnormality such as overcharge or overdischarge is detected. The molten conductor 13 is melted to interrupt the current path.

［保護素子］
保護素子３は、図１（Ａ）に示すように、絶縁基板１１と、絶縁基板１１に積層され、絶縁部材１５に覆われた発熱体１４と、絶縁基板１１の両端に形成された第１の電極１２（Ａ１）及び第２の電極１２（Ａ２）と、絶縁部材１５上に発熱体１４と重畳するように積層された発熱体引出電極１６と、両端が第１、第２の電極１２（Ａ１），１２（Ａ２）にそれぞれ接続され、中央部が発熱体引出電極１６に接続された可溶導体１３とを備える。 [Protective element]
As shown in FIG. 1A, the protection element 3 includes an insulating substrate 11, a heating element 14 stacked on the insulating substrate 11 and covered with an insulating member 15, and a first formed on both ends of the insulating substrate 11. Electrode 12 (A1) and second electrode 12 (A2), heating element extraction electrode 16 laminated on insulating member 15 so as to overlap heating element 14, and first and second electrodes 12 at both ends. (A1) and 12 (A2) are connected to each other, and a soluble conductor 13 having a central portion connected to the heating element extraction electrode 16 is provided.

絶縁基板１１は、たとえば、アルミナ、ガラスセラミックス、ムライト、ジルコニアなどの絶縁性を有する部材によって形成される。その他、ガラスエポキシ基板、フェノール基板等のプリント配線基板に用いられる材料を用いてもよいが、ヒューズ溶断時の温度に留意する必要がある。絶縁基板１１は、例えば図１（Ａ）に示すように矩形状に形成されている。   The insulating substrate 11 is formed of an insulating member such as alumina, glass ceramics, mullite, zirconia, and the like. In addition, although the material used for printed wiring boards, such as a glass epoxy board | substrate and a phenol board | substrate, may be used, it is necessary to pay attention to the temperature at the time of fuse blowing. For example, the insulating substrate 11 is formed in a rectangular shape as shown in FIG.

発熱体１４は、比較的抵抗値が高く通電すると発熱する導電性を有する部材であって、たとえばＷ、Ｍｏ、Ｒｕ等からなる。これらの合金あるいは組成物、化合物の粉状体を樹脂バインダ等と混合して、ペースト状にしたものを絶縁基板１１上にスクリーン印刷技術を用いてパターン形成して、焼成する等によって形成する。   The heating element 14 is a conductive member that has a relatively high resistance value and generates heat when energized, and is made of, for example, W, Mo, Ru, or the like. These alloys, compositions, or compound powders are mixed with a resin binder or the like to form a paste on the insulating substrate 11 by patterning using a screen printing technique and firing.

発熱体１４を覆うように絶縁部材１５が配置され、この絶縁部材１５を介して発熱体１４に対向するように発熱体引出電極１６が配置される。発熱体１４の熱を効率良く可溶導体１３に伝えるために、発熱体１４と絶縁基板１１の間にも絶縁部材１５を積層しても良い。絶縁部材１５としては、例えばガラスを用いることができる。   An insulating member 15 is disposed so as to cover the heating element 14, and a heating element extraction electrode 16 is disposed so as to face the heating element 14 through the insulating member 15. In order to efficiently transfer the heat of the heating element 14 to the soluble conductor 13, an insulating member 15 may be laminated between the heating element 14 and the insulating substrate 11. As the insulating member 15, for example, glass can be used.

なお、発熱体１４は、図１に示すように、絶縁基板１１の電極１２（Ａ１），１２（Ａ２）が設けられた表面側に形成してもよく、絶縁基板１１の表面と反対側の裏面１１ａに形成してもよい。また、発熱体１４は、絶縁基板１１の内部に形成してもよい。さらに、発熱体１４は、発熱体引出電極１６や可溶導体１３を重畳させてもよく、あるいは絶縁基板１１の表面上において、発熱体引出電極１６や可溶導体１３と並列して形成してもよい。また、いずれの場合も、発熱体１４は、周囲との絶縁を図る必要がある場合は、絶縁部材１５によって被覆され、絶縁の必要がない場合は、絶縁部材１５によって被覆されなくともよい。   As shown in FIG. 1, the heating element 14 may be formed on the surface side of the insulating substrate 11 on which the electrodes 12 (A1) and 12 (A2) are provided, or on the side opposite to the surface of the insulating substrate 11. You may form in the back surface 11a. Further, the heating element 14 may be formed inside the insulating substrate 11. Furthermore, the heating element 14 may overlap the heating element extraction electrode 16 and the soluble conductor 13 or may be formed in parallel with the heating element extraction electrode 16 and the soluble conductor 13 on the surface of the insulating substrate 11. Also good. In any case, the heating element 14 may be covered with the insulating member 15 when it is necessary to insulate from the surroundings, and may not be covered with the insulating member 15 when there is no need for insulation.

発熱体引出電極１６の一端は、発熱体電極１８（Ｐ１）に接続されるとともに、発熱体１４の一端と連続される。また、発熱体１４の他端は、他方の発熱体電極１８（Ｐ２）に接続される。なお、発熱体電極１８（Ｐ１）は、絶縁基板１１の第３の辺１１ｄ側に形成され、発熱体電極１８（Ｐ２）は、絶縁基板１１の第４の辺１１ｅ側に形成されている。また、図２に示すように、発熱体電極１８（Ｐ２）は、第４の辺１１ｅに形成されたハーフスルーホール２０を介して絶縁基板１１の裏面１１ａに形成された外部接続電極２１（Ｐ２）と接続されている。   One end of the heating element extraction electrode 16 is connected to the heating element electrode 18 (P1) and is continuous with one end of the heating element 14. The other end of the heating element 14 is connected to the other heating element electrode 18 (P2). The heating element electrode 18 (P1) is formed on the third side 11d side of the insulating substrate 11, and the heating element electrode 18 (P2) is formed on the fourth side 11e side of the insulating substrate 11. Further, as shown in FIG. 2, the heating element electrode 18 (P2) is connected to the external connection electrode 21 (P2) formed on the back surface 11a of the insulating substrate 11 through the half through hole 20 formed on the fourth side 11e. ).

可溶導体１３は、発熱体１４の発熱により速やかに溶断される材料からなり、例えばＳｎを主成分とするＰｂフリーハンダ等の低融点金属を好適に用いることができる。また、可溶導体１３は、Ｉｎ、Ｐｂ、Ａｇ、Ｃｕ又はこれらのうちのいずれかを主成分とする合金等の高融点金属を用いてもよく、あるいは低融点金属と高融点金属との積層体であってもよい。   The soluble conductor 13 is made of a material that is quickly melted by the heat generated by the heating element 14, and a low-melting-point metal such as Pb-free solder containing Sn as a main component can be suitably used. Further, the fusible conductor 13 may be made of a high melting point metal such as In, Pb, Ag, Cu, or an alloy mainly containing any of these, or a laminate of a low melting point metal and a high melting point metal. It may be a body.

なお、可溶導体１３は、発熱体引出電極１６及び電極１２（Ａ１），１２（Ａ２）へ、ハンダ等により接続されている。可溶導体１３は、リフローはんだ付けによって容易に接続することができる。   The soluble conductor 13 is connected to the heating element extraction electrode 16 and the electrodes 12 (A1) and 12 (A2) by solder or the like. The fusible conductor 13 can be easily connected by reflow soldering.

図２に示すように、絶縁基板１１の両側縁に形成され、可溶導体１３によって接続されている第１の電極１２（Ａ１）、第２の電極１２（Ａ２）は、それぞれ、ハーフスルーホール２０を介して、絶縁基板の裏面１１ａに設けられた第１、第２の外部接続端子２１（Ａ１），２１（Ａ２）と接続されている。保護素子３は、外部接続端子２１（Ａ１），２１（Ａ２）が、後述する回路基板２に設けられた接続電極２５（Ａ１），２５（Ａ２）に接続されることにより、電流経路の一部に組み込まれる。   As shown in FIG. 2, the first electrode 12 (A1) and the second electrode 12 (A2) formed on both side edges of the insulating substrate 11 and connected by the fusible conductor 13 are respectively half-through holes. 20 is connected to the first and second external connection terminals 21 (A1) and 21 (A2) provided on the back surface 11a of the insulating substrate. The protective element 3 is configured such that the external connection terminals 21 (A1) and 21 (A2) are connected to connection electrodes 25 (A1) and 25 (A2) provided on the circuit board 2 to be described later. Incorporated into the department.

ハーフスルーホール２０は、内壁に導電層が形成され、第１の電極１２（Ａ１）と第１の外部接続端子２１（Ａ１）、第２の電極１２（Ａ２）と第２の外部接続端子２１（Ａ２）とを、電気的に接続するものである。ハーフスルーホール２０は、第１の電極１２（Ａ１）が形成された絶縁基板１１の第１の辺１１ｂ、及び第２の電極１２（Ａ２）が形成された第２の辺１１ｃに形成されている。ハーフスルーホール２０の内壁に形成された導電層は、例えば導電ペーストを充填することにより形成することができる。   The half-through hole 20 has a conductive layer formed on the inner wall, and the first electrode 12 (A1) and the first external connection terminal 21 (A1), the second electrode 12 (A2) and the second external connection terminal 21. (A2) is electrically connected. The half through hole 20 is formed on the first side 11b of the insulating substrate 11 on which the first electrode 12 (A1) is formed, and on the second side 11c on which the second electrode 12 (A2) is formed. Yes. The conductive layer formed on the inner wall of the half through hole 20 can be formed, for example, by filling with a conductive paste.

第１の電極１２（Ａ１）は、矩形状に形成された絶縁基板１１の第１の辺１１ｂの側縁部に形成されている。また、第１の電極１２（Ａ１）は、絶縁基板１１の第１の辺１１ｂの両端よりも内側に形成されている。これにより、保護素子３は、第１の電極１２（Ａ１）を絶縁基板１１の外縁からできるだけ離間した位置に設け、発熱体１４の熱が第１の電極１２（Ａ１）を介して回路基板２や外方へ放熱することを防止でき、可溶導体１３の速溶断特性を向上することができる。   The first electrode 12 (A1) is formed on the side edge of the first side 11b of the insulating substrate 11 formed in a rectangular shape. The first electrode 12 (A1) is formed on the inner side than both ends of the first side 11b of the insulating substrate 11. Thereby, the protection element 3 provides the first electrode 12 (A1) at a position as far as possible from the outer edge of the insulating substrate 11, and the heat of the heating element 14 passes through the first electrode 12 (A1). It is possible to prevent heat radiation to the outside and to improve the fast fusing characteristics of the soluble conductor 13.

すなわち、発熱体１４の熱は可溶導体１３を介して第１の電極１２（Ａ１）にも伝わり、第１の電極１２（Ａ１）からも放熱される。保護素子３は、電子機器等の異常時には可溶導体１３を速やかに溶断し電流経路を遮断することが求められており、そのために発熱体１４の熱が第１の電極１２（Ａ１）等から放熱される事態をできるだけ抑え、速やかに可溶導体１３を溶融温度まで昇温させることが求められる。第１の電極１２（Ａ１）の熱は、絶縁基板１１の外縁より多く放熱されることから、保護素子３は、第１の電極１２（Ａ１）を絶縁基板１１の第１の辺１１ｂの両端よりも内側に形成し、第１の電極１２（Ａ１）を絶縁基板１１の外縁からできるだけ離間した位置に設ける。これにより、保護素子３は、発熱体１４の熱が第１の電極１２（Ａ１）を介して回路基板２や外方へ放熱される事態を抑制することができる。   That is, the heat of the heating element 14 is also transmitted to the first electrode 12 (A1) through the soluble conductor 13, and is also radiated from the first electrode 12 (A1). The protection element 3 is required to quickly melt the fusible conductor 13 and cut off the current path when the electronic device or the like is abnormal. For this reason, the heat of the heating element 14 is transmitted from the first electrode 12 (A1) or the like. It is required to suppress the situation of heat dissipation as much as possible and to quickly raise the temperature of the soluble conductor 13 to the melting temperature. Since the heat of the first electrode 12 (A1) is radiated more than the outer edge of the insulating substrate 11, the protection element 3 uses the first electrode 12 (A1) at both ends of the first side 11b of the insulating substrate 11. The first electrode 12 (A1) is provided at a position as far as possible from the outer edge of the insulating substrate 11. Thereby, the protection element 3 can suppress the situation where the heat of the heating element 14 is radiated to the circuit board 2 or the outside via the first electrode 12 (A1).

また、第１の電極１２（Ａ１）は、絶縁基板１１の当該第１の辺１１ｂの中央部Ｃ１付近に形成してもよい。これにより、第１の電極１２（Ａ１）は、電極面積が小さくなり熱容量が抑えられるとともに、放熱経路がハーフスルーホール２０に限定され、より第１の電極１２（Ａ１）からの放熱を抑制することができる。   Further, the first electrode 12 (A1) may be formed in the vicinity of the central portion C1 of the first side 11b of the insulating substrate 11. As a result, the first electrode 12 (A1) has a reduced electrode area and a reduced heat capacity, and the heat dissipation path is limited to the half-through hole 20 to further suppress heat dissipation from the first electrode 12 (A1). be able to.

［スルーホール］
第１の電極１２（Ａ１）と第１の外部接続端子２１（Ａ１）とを接続するハーフスルーホール２０は、絶縁基板１１の第１の辺１１ｂの中央部Ｃ１に形成されている。これにより、ハーフスルーホール２０が第１の辺１１ｂの一端側に偏倚して形成されている場合に比して（図１９参照）、放熱経路が短く、発熱体１４の熱が第１の電極１２（Ａ１）に拡散することを防止し、効率よく発熱体１４の熱を可溶導体１３に集中させることができる。 [Through hole]
The half through hole 20 that connects the first electrode 12 (A1) and the first external connection terminal 21 (A1) is formed in the central portion C1 of the first side 11b of the insulating substrate 11. Thereby, compared with the case where the half through-hole 20 is formed to be biased toward one end of the first side 11b (see FIG. 19), the heat dissipation path is short and the heat of the heating element 14 is reduced to the first electrode. 12 (A1) can be prevented, and the heat of the heating element 14 can be efficiently concentrated on the soluble conductor 13.

すなわち、保護素子３は、絶縁基板１１の外縁から最も遠く発熱体１４の熱が最も逃げにくい基板中心が最も高温になる。この基板中心に応じて、スルーホール２０を絶縁基板１１の第１の辺１１ｂの中央部Ｃ１に形成することにより、放熱経路が第１の電極１２（Ａ１）や第１の電極１２（Ａ１）が形成された第１の辺１１ｂに拡散することがなく、発熱体１４の熱を可溶導体１３に集中させることができる。   That is, the protection element 3 has the highest temperature at the center of the substrate farthest from the outer edge of the insulating substrate 11 and from which the heat of the heating element 14 is most difficult to escape. By forming the through hole 20 in the central portion C1 of the first side 11b of the insulating substrate 11 according to the center of the substrate, the heat dissipation path becomes the first electrode 12 (A1) or the first electrode 12 (A1). The heat of the heating element 14 can be concentrated on the fusible conductor 13 without diffusing to the first side 11b where the is formed.

このとき、上述したように、第１の電極１２（Ａ１）も、絶縁基板１１の第１の辺１１ｂの中央部Ｃ１に形成することにより、第１の電極１２（Ａ１）の熱容量を抑えるとともに、第１の電極１２（Ａ１）に拡散した熱も放熱しにくくなり、より発熱体１４の熱の放熱を抑制することができる。   At this time, as described above, the first electrode 12 (A1) is also formed in the central portion C1 of the first side 11b of the insulating substrate 11, thereby suppressing the heat capacity of the first electrode 12 (A1). The heat diffused to the first electrode 12 (A1) is also difficult to dissipate, and the heat radiation of the heating element 14 can be further suppressed.

以上は、第１の電極１２（Ａ１）について述べたが、第２の電極１２（Ａ２）においても、同様である。すなわち、第２の電極１２（Ａ２）は、絶縁基板１１の第２の辺１１ｃの両端よりも内側に形成され、好ましくは絶縁基板１１の当該第２の辺１１ｃの中央部Ｃ２付近に形成される。   Although the first electrode 12 (A1) has been described above, the same applies to the second electrode 12 (A2). That is, the second electrode 12 (A2) is formed inside both ends of the second side 11c of the insulating substrate 11, and is preferably formed near the central portion C2 of the second side 11c of the insulating substrate 11. The

これにより、第２の電極１２（Ａ２）は、発熱体１４の熱が伝搬しても回路基板２や外方へ放熱することを防止でき、可溶導体１３の速溶断特性を向上することができ、また、電極面積が小さくなり熱容量が抑えられるとともに、放熱経路がハーフスルーホール２０に限定され、より第２の電極１２（Ａ２）からの放熱を抑制することができる。   As a result, the second electrode 12 (A2) can prevent heat from being radiated to the circuit board 2 or the outside even when the heat of the heating element 14 propagates, thereby improving the fast fusing characteristics of the soluble conductor 13. In addition, the electrode area is reduced and the heat capacity is suppressed, and the heat dissipation path is limited to the half-through hole 20, so that heat dissipation from the second electrode 12 (A2) can be further suppressed.

また、第２の電極１２（Ａ２）に設けられるハーフスルーホール２０も、同様に、絶縁基板１１の第２の辺１１ｃの中央部Ｃ２に形成されている。これにより、ハーフスルーホール２０が第２の辺１１ｃの一端側に偏倚して形成されている場合に比して、放熱経路が短く、発熱体１４の熱が第２の電極１２（Ａ２）に拡散することを防止し、効率よく発熱体１４の熱を可溶導体１３に集中させることができる。   Similarly, the half through hole 20 provided in the second electrode 12 (A2) is also formed in the central portion C2 of the second side 11c of the insulating substrate 11. Thereby, compared with the case where the half through hole 20 is formed to be biased toward one end of the second side 11c, the heat dissipation path is short, and the heat of the heating element 14 is transferred to the second electrode 12 (A2). It is possible to prevent diffusion and to efficiently concentrate the heat of the heating element 14 to the soluble conductor 13.

［可溶導体１３の位置］
また、このとき、可溶導体１３は、絶縁基板１１の第１の辺１１ｂ及び第２の辺１１ｃの中央部Ｃ１、Ｃ２を結ぶ絶縁基板１１の中心線Ｃ０上に搭載されることが好ましい。これにより、可溶導体１３は、絶縁基板１１の最も高温となる基板中央部上に搭載されるため、効率よく発熱体の熱が伝達され、速やかに溶断することができる。 [Position of soluble conductor 13]
At this time, the fusible conductor 13 is preferably mounted on the center line C0 of the insulating substrate 11 connecting the central portions C1 and C2 of the first side 11b and the second side 11c of the insulating substrate 11. As a result, the fusible conductor 13 is mounted on the central part of the insulating substrate 11 where the temperature is highest, so that the heat of the heating element is efficiently transmitted and can be quickly melted.

なお、可溶導体１３は、第１、第２の電極１２（Ａ１），１２（Ａ２）間に接続されていればよく、絶縁基板１１の中心線Ｃ０上からオフセットされて配置されていてもよい。この場合も、可溶導体１３は、第１の電極１２（Ａ１）及び第２の電極１２（Ａ２）からの放熱が抑制されているため、発熱体１４の熱で効率よく昇温され、速やかに溶断することができる。また、可溶導体１３は、第１、第２の電極１２（Ａ１），１２（Ａ２）間に複数搭載されていてもよく、このうち１つの可溶導体１３は絶縁基板１１の中心線Ｃ０上に配置されてもよく、あるいはすべての可溶導体１３が絶縁基板１１の中心線Ｃ０上からオフセットされて配置されていてもよい。   The fusible conductor 13 only needs to be connected between the first and second electrodes 12 (A1) and 12 (A2), and may be arranged offset from the center line C0 of the insulating substrate 11. Good. Also in this case, the fusible conductor 13 is efficiently heated by the heat of the heating element 14 because the heat radiation from the first electrode 12 (A1) and the second electrode 12 (A2) is suppressed. Can be fused. A plurality of soluble conductors 13 may be mounted between the first and second electrodes 12 (A1) and 12 (A2), and one of the soluble conductors 13 is the center line C0 of the insulating substrate 11. Alternatively, all the soluble conductors 13 may be arranged offset from the center line C0 of the insulating substrate 11.

なお、保護素子３は、可溶導体１３の酸化防止のために、可溶導体１３上のほぼ全面にフラックス１７を塗布してもよい。   The protection element 3 may apply a flux 17 on almost the entire surface of the soluble conductor 13 in order to prevent oxidation of the soluble conductor 13.

また、保護素子３は、内部を保護するために、絶縁基板１１上にカバー部材（図示せず）が設けられている。   Further, the protection element 3 is provided with a cover member (not shown) on the insulating substrate 11 in order to protect the inside.

［参考例］
次いで、保護素子の第１、第２の電極の配置を変えて可溶導体の溶断時間を計測した参考例について説明する。参考比較例に係る従来の保護素子８０では、図１９（Ａ）に示すように、第１、第２の電極８１，８２が絶縁基板８５の第１の辺８５ａ及び第２の辺８５ｂの各中央部から一端側にかけて形成されている。そして、保護素子８０は、回路基板の接続電極に接続されるハーフスルーホール９０，９１が、それぞれ第１の辺８５ａ又は第２の辺８５ｂの一端側に偏倚して設けられている。保護素子８０は、これにより回路基板上に１８０°回転して実装されることを防止することができる。 [Reference example]
Next, a reference example in which the fusing time of the soluble conductor is measured by changing the arrangement of the first and second electrodes of the protective element will be described. In the conventional protection element 80 according to the reference comparative example, as shown in FIG. 19A, the first and second electrodes 81 and 82 are provided on the first side 85a and the second side 85b of the insulating substrate 85, respectively. It is formed from the central part to one end side. In the protection element 80, half-through holes 90 and 91 connected to the connection electrodes of the circuit board are provided offset to one end side of the first side 85a or the second side 85b, respectively. Thus, the protection element 80 can be prevented from being rotated by 180 ° on the circuit board.

一方、参考実施例に係る保護素子３は、第１、第２の電極１２（Ａ１），１２（Ａ２）及びハーフスルーホール２０が、絶縁基板１１の第１の辺１１ｂ及び第２の辺１１ｃの各中央部Ｃ１、Ｃ２に形成されている（図１参照）。保護素子８０と保護素子３とは、その他の構成は同じである。   On the other hand, the protection element 3 according to the reference example has the first and second electrodes 12 (A1) and 12 (A2) and the half through hole 20 in the first side 11b and the second side 11c of the insulating substrate 11. Are formed at the central portions C1 and C2 (see FIG. 1). The protection element 80 and the protection element 3 have the same other configurations.

そして、参考実施例及び参考比較例に係る保護素子の各発熱体に１０Ｗの電力を印加し、可溶導体１３，８３の溶断時間を比べたところ、参考比較例に係る保護素子８０では、可溶導体８３の溶断時間が１．５ｓｅｃであったのに対して、参考実施例に係る保護素子３では、可溶導体１３の溶断時間が。１．２ｓｅｃとなり、速溶断性に優れていることが分かった。   And when 10 W electric power was applied to each heating element of the protection element according to the reference example and the reference comparative example and the fusing times of the fusible conductors 13 and 83 were compared, the protection element 80 according to the reference comparative example was acceptable. While the fusing time of the molten conductor 83 was 1.5 sec, in the protection element 3 according to the reference example, the fusing time of the soluble conductor 13 was long. It was found to be 1.2 sec and excellent in fast fusing property.

これは、参考比較例に係る保護素子８０においては、第１、第２の電極８１，８２が絶縁基板８５の第１の辺８５ａ及び第２の辺８５ｂの各中央部から一端側にかけて形成され、絶縁基板８５の外縁より外方に臨む領域が多いため、発熱体８４の熱がより多く放熱されたことによる。また、参考比較例に係る保護素子８０においては、熱容量の大きなハーフスルーホール９０，９１が絶縁基板８５の一方の辺８５ａ及び他方の辺８５ｂの一端側に偏倚して設けられているため、発熱体８４の熱の放熱経路が広がり、可溶導体８３の昇温を阻害したことによる。   This is because in the protection element 80 according to the reference comparative example, the first and second electrodes 81 and 82 are formed from the respective central portions of the first side 85a and the second side 85b of the insulating substrate 85 to one end side. This is because there are many areas facing outward from the outer edge of the insulating substrate 85, and thus the heat of the heating element 84 is more dissipated. Further, in the protection element 80 according to the reference comparative example, the half-through holes 90 and 91 having a large heat capacity are provided in a biased manner on one end side of the one side 85a and the other side 85b of the insulating substrate 85. This is because the heat dissipation path of the heat of the body 84 is widened and the temperature rise of the soluble conductor 83 is inhibited.

一方、参考実施例に係る保護素子３は、第１、第２の電極１２（Ａ１），１２（Ａ２）及びハーフスルーホール２０が、絶縁基板１１の第１の辺１１ｂ及び第２の辺１１ｃの各中央部Ｃ１、Ｃ２に形成されている。したがって、放熱経路が限定され、発熱体１４の熱が第１、第２の電極１２（Ａ１），１２（Ａ２）及びハーフスルーホール２０を介して放熱されにくく、発熱体１４の熱を優先的に可溶導体１３に伝わり速やかに溶融温度まで昇温させることができたことによる。   On the other hand, the protection element 3 according to the reference example has the first and second electrodes 12 (A1) and 12 (A2) and the half through hole 20 in the first side 11b and the second side 11c of the insulating substrate 11. Are formed at the central portions C1 and C2. Therefore, the heat dissipation path is limited, and the heat of the heating element 14 is not easily dissipated through the first and second electrodes 12 (A1) and 12 (A2) and the half through hole 20, and the heat of the heating element 14 is given priority. This is because it was transmitted to the soluble conductor 13 and rapidly raised to the melting temperature.

［回路基板］
［第１の形態］
次いで、保護素子３が接続される回路基板２について説明する。回路基板２は、例えばガラスエポキシ基板やガラス基板、セラミック基板等のリジッド基板や、フレキシブル基板等、公知の絶縁基板が用いられ、図３に示すように、保護素子３が実装される実装領域Ｒを有し、実装領域Ｒ内に保護素子３との接続電極が設けられている。実装領域Ｒは、保護素子３の絶縁基板１１と同形、同面積である。なお、回路基板２は、保護素子３の発熱体１４に通電させるＦＥＴ等の素子が実装される。 [Circuit board]
[First embodiment]
Next, the circuit board 2 to which the protection element 3 is connected will be described. As the circuit board 2, for example, a known insulating substrate such as a rigid substrate such as a glass epoxy substrate, a glass substrate, or a ceramic substrate, or a flexible substrate is used. As shown in FIG. 3, a mounting region R on which the protection element 3 is mounted. In the mounting region R, a connection electrode for the protection element 3 is provided. The mounting region R has the same shape and the same area as the insulating substrate 11 of the protection element 3. The circuit board 2 is mounted with an element such as an FET that energizes the heating element 14 of the protection element 3.

実装領域Ｒは、保護素子３の絶縁基板１１と同じ面積を有し、絶縁基板１１の裏面１１ａに設けられた外部接続端子２１（Ａ１），２１（Ａ２），２１（Ｐ２）とそれぞれ接続される接続電極２５（Ａ１），２５（Ａ２），２５（Ｐ２）が形成されている。また、実装領域Ｒには、保護素子３との接続に必要な接続電極２５（Ａ１），２５（Ａ２），２５（Ｐ２）を除いて、保護素子３との接続に不要な電極パターンが形成されていない。   The mounting region R has the same area as the insulating substrate 11 of the protection element 3 and is connected to the external connection terminals 21 (A1), 21 (A2), and 21 (P2) provided on the back surface 11a of the insulating substrate 11, respectively. Connection electrodes 25 (A1), 25 (A2), and 25 (P2) are formed. Further, in the mounting region R, electrode patterns unnecessary for connection with the protection element 3 are formed except for the connection electrodes 25 (A1), 25 (A2), and 25 (P2) required for connection with the protection element 3. It has not been.

これにより、実装領域Ｒには、熱容量の大きな電極パターンが保護素子３の実装に必要な限度で形成されているため、絶縁基板１１の裏面１１ａ側からの放熱を抑制することができる。したがって、保護回路基板１は、発熱体１４の熱を効率よく可溶導体１３へ熱を伝えることができる。これにより、保護回路基板１は、過充電、過放電等の異常が検知されると速やかに可溶導体１３を溶融させて電流経路を遮断することができる。   Thereby, since the electrode pattern with a large heat capacity is formed in the mounting region R to the limit necessary for mounting the protective element 3, heat radiation from the back surface 11 a side of the insulating substrate 11 can be suppressed. Therefore, the protection circuit board 1 can efficiently transfer the heat of the heating element 14 to the soluble conductor 13. Thereby, the protection circuit board 1 can melt | dissolve the soluble conductor 13 rapidly and can interrupt | block an electric current path, when abnormality, such as an overcharge and overdischarge, is detected.

接続電極２５（Ａ１），２５（Ａ２）は、外部接続端子２１（Ａ１），２１（Ａ２）の幅以上の幅を有し、保護素子３との接続抵抗を低減させている。一方、接続電極２５（Ａ１），２５（Ａ２）は、保護素子３の実装領域Ｒ内において広範に設けると、発熱体１４の熱を吸収し、可溶導体１３の速やかな溶断を阻害する。また、接続電極２５（Ａ１），２５（Ａ２）は、保護素子３の絶縁基板１１がセラミックにより形成されている場合、当該セラミック基板のコーナー部が接触すると熱が逃げてしまうことから、絶縁基板１１の第１、第２の辺１１ｂ，１１ｃよりも狭い幅で形成し、保護素子３が傾いて実装された場合にも絶縁基板１１のコーナー部との接触を避けること好ましい。以上のことから、接続電極２５（Ａ１），２５（Ａ２）は、外部接続端子２１（Ａ１），２１（Ａ２）と略同じ幅に形成されることが好ましい。   The connection electrodes 25 (A 1) and 25 (A 2) have a width equal to or greater than the width of the external connection terminals 21 (A 1) and 21 (A 2), and reduce the connection resistance with the protection element 3. On the other hand, when the connection electrodes 25 (A 1) and 25 (A 2) are provided extensively in the mounting region R of the protection element 3, the connection electrodes 25 (A 1) and 25 (A 2) absorb the heat of the heating element 14 and hinder the prompt fusing of the soluble conductor 13. In addition, when the insulating substrate 11 of the protective element 3 is formed of ceramic, the connection electrodes 25 (A1) and 25 (A2) are such that heat escapes when the corner portions of the ceramic substrate come into contact with each other. The first and second sides 11b and 11c are preferably narrower than the first and second sides 11b and 11c, and it is preferable to avoid contact with the corners of the insulating substrate 11 even when the protective element 3 is mounted with an inclination. From the above, the connection electrodes 25 (A1) and 25 (A2) are preferably formed to have substantially the same width as the external connection terminals 21 (A1) and 21 (A2).

次いで、第１の実施例について説明する。第１の実施例では、回路基板２の実装領域Ｒにダミー電極を設けた保護回路基板と、ダミー電極を設けていない保護回路基板との、各可溶導体の溶断時間を測定した。図４に示すように、比較例１に係る回路基板１００には、実装領域Ｒに、保護素子３の外部接続端子２１（Ａ１），２１（Ａ２），２１（Ｐ２）と接続される接続電極２５（Ａ１），２５（Ａ２），２５（Ｐ２）の他、ダミー電極１０１が設けられている。接続電極２５（Ａ１），２５（Ａ２），２５（Ｐ２）及びダミー電極１０１の線幅Ｗは２ｍｍである。実施例１に係る回路基板２は、実装領域Ｒに接続電極２５（Ａ１），２５（Ａ２），２５（Ｐ２）のみが設けられている他は、比較例１と同じ構成である（図３参照）。また、実施例１及び比較例１に係る保護素子としては、上述した保護素子３を用いた。   Next, the first embodiment will be described. In the first example, the fusing time of each soluble conductor between the protection circuit board provided with the dummy electrode in the mounting region R of the circuit board 2 and the protection circuit board provided with no dummy electrode was measured. As shown in FIG. 4, the circuit board 100 according to the comparative example 1 has connection electrodes connected to the external connection terminals 21 (A1), 21 (A2), and 21 (P2) of the protection element 3 in the mounting region R. In addition to 25 (A1), 25 (A2), and 25 (P2), a dummy electrode 101 is provided. The line width W of the connection electrodes 25 (A1), 25 (A2), 25 (P2) and the dummy electrode 101 is 2 mm. The circuit board 2 according to the first embodiment has the same configuration as that of the first comparative example except that only the connection electrodes 25 (A1), 25 (A2), and 25 (P2) are provided in the mounting region R (FIG. 3). reference). Moreover, as the protective element according to Example 1 and Comparative Example 1, the protective element 3 described above was used.

そして、実施例１及び比較例１に係る保護素子３の各発熱体１４に１０Ｗの電力を印加し、可溶導体１３の溶断時間を比べたところ、比較例１に係る保護素子３では、可溶導体１３の溶断時間が１．８ｓｅｃであったのに対して、実施例１に係る保護素子３では、可溶導体１３の溶断時間が。１．２ｓｅｃとなり、速溶断性に優れていることが分かった。   And when 10 W of electric power was applied to each heating element 14 of the protection element 3 according to Example 1 and Comparative Example 1 and the fusing time of the fusible conductor 13 was compared, the protection element 3 according to Comparative Example 1 was acceptable. While the fusing time of the molten conductor 13 was 1.8 sec, the fusing time of the fusible conductor 13 in the protective element 3 according to Example 1 was increased. It was found to be 1.2 sec and excellent in fast fusing property.

これは、比較例１に係る保護素子においては、実装領域Ｒ内にダミー電極１０１を設けたことによって、発熱体１４の熱が回路基板１００の裏面側により多く放熱され、可溶導体１３へ優先的に熱が回らなかったことによる。一方、実施例１では、実装領域Ｒ内には、保護素子３の実装に必要最小限の接続電極２５のみが形成され、保護素子３の下方には熱容量の大きな不要パターンが設けられていない。したがって、実施例１に係る保護回路基板によれば、絶縁基板１１の下方への放熱が抑制され、効率よく発熱体１４の熱を可溶導体１３に伝えることができたことにより、速溶断特性を向上させることができた。   This is because, in the protective element according to Comparative Example 1, by providing the dummy electrode 101 in the mounting region R, the heat of the heating element 14 is more dissipated to the back side of the circuit board 100, giving priority to the soluble conductor 13. This is because the heat did not turn. On the other hand, in Example 1, only the minimum connection electrode 25 necessary for mounting the protection element 3 is formed in the mounting region R, and an unnecessary pattern having a large heat capacity is not provided below the protection element 3. Therefore, according to the protection circuit board according to the first embodiment, the heat radiation to the lower side of the insulating substrate 11 is suppressed, and the heat of the heating element 14 can be efficiently transmitted to the fusible conductor 13, so that the fast fusing characteristics. Was able to improve.

なお、実施例１と比較例１に係る保護回路基板に、それぞれ５Ａ通電させたときの、保護素子３の温度を測定したところ、放熱対策上ダミー電極１０１が実装領域Ｒに形成された比較例では５９℃であった。一方、実装領域Ｒにダミー電極が設けられていない実施例１では、６０℃と、比較例１に比して若干昇温したが、実使用上は問題ない程度であった。   In addition, when the temperature of the protective element 3 was measured when 5 A was respectively applied to the protective circuit boards according to Example 1 and Comparative Example 1, a comparative example in which the dummy electrode 101 was formed in the mounting region R for heat dissipation measures. It was 59 ° C. On the other hand, in Example 1 in which no dummy electrode was provided in the mounting region R, the temperature was raised slightly to 60 ° C. compared to Comparative Example 1, but there was no problem in practical use.

次いで、第２の実施例について説明する。第２の実施例では、保護素子３の実装に寄与しないダミー電極を実装領域Ｒの内外にわたって形成した保護回路基板と、ダミー電極を実装領域Ｒ外に形成した保護回路基板との、各可溶導体１３の溶断時間を測定した。   Next, a second embodiment will be described. In the second embodiment, each of the fusible elements of the protection circuit board in which the dummy electrode that does not contribute to the mounting of the protection element 3 is formed over the inside and outside of the mounting area R and the protection circuit board in which the dummy electrode is formed outside the mounting area R. The fusing time of the conductor 13 was measured.

図５に示すように、比較例２に係る回路基板１１０には、実装領域Ｒに、保護素子３の外部接続端子２１（Ａ１），２１（Ａ２），２１（Ｐ２）と接続される接続電極２５（Ａ１），２５（Ａ２），２５（Ｐ２）の他、ダミー電極１１１が設けられている。ダミー電極１１１は、実装領域Ｒの内外にわたって形成されている。接続電極２５（Ａ１），２５（Ａ２），２５（Ｐ２）及びダミー電極１１１の線幅Ｗは２ｍｍである。一方、図６に示すように、実施例２に係る回路基板２は、実装領域Ｒに接続電極２５（Ａ１），２５（Ａ２），２５（Ｐ２）のみが設けられ、ダミー電極１１１は実装領域Ｒ外に形成されている他は、比較例２に係る回路基板１１０と同じ構成である。また、実施例２及び比較例２に係る保護素子としては、上述した保護素子３を用いた。   As illustrated in FIG. 5, the circuit board 110 according to the comparative example 2 includes connection electrodes connected to the external connection terminals 21 (A1), 21 (A2), and 21 (P2) of the protection element 3 in the mounting region R. In addition to 25 (A1), 25 (A2), and 25 (P2), a dummy electrode 111 is provided. The dummy electrode 111 is formed across the mounting region R. The line width W of the connection electrodes 25 (A 1), 25 (A 2), 25 (P 2) and the dummy electrode 111 is 2 mm. On the other hand, as shown in FIG. 6, in the circuit board 2 according to the second embodiment, only the connection electrodes 25 (A1), 25 (A2), and 25 (P2) are provided in the mounting region R, and the dummy electrode 111 is provided in the mounting region. Other than being formed outside R, the configuration is the same as that of the circuit board 110 according to the second comparative example. Further, as the protective element according to Example 2 and Comparative Example 2, the protective element 3 described above was used.

そして、実施例２及び比較例２に係る保護素子３の各発熱体１４に１０Ｗの電力を印加し、可溶導体１３の溶断時間を比べたところ、比較例２に係る保護素子３では、可溶導体１３の溶断時間が２．５ｓｅｃであったのに対して、実施例２に係る保護素子３では、可溶導体１３の溶断時間が。１．３ｓｅｃとなり、速溶断性に優れていることが分かった。   And when 10 W of electric power was applied to each heating element 14 of the protection element 3 according to Example 2 and Comparative Example 2 and the fusing time of the soluble conductor 13 was compared, the protection element 3 according to Comparative Example 2 was acceptable. While the fusing time of the molten conductor 13 was 2.5 sec, in the protection element 3 according to Example 2, the fusing time of the soluble conductor 13 was long. It was 1.3 sec, and it was found that the fast fusing property was excellent.

すなわち、図５に示すようにダミー電極１１１が実装領域Ｒの内外にわたって長く形成されている場合も、放熱が促進され、可溶導体１３へ優先的に熱が回らず、速溶断性を阻害する。   That is, as shown in FIG. 5, even when the dummy electrode 111 is formed long inside and outside the mounting region R, heat dissipation is promoted, heat does not preferentially flow to the soluble conductor 13, and the fast fusing property is hindered. .

なお、実施例２と比較例２に係る保護回路基板に、それぞれ５Ａ通電させたときの、保護素子３の温度を測定したところ、放熱対策上ダミー電極１１１が実装領域Ｒの内外にわたって形成された比較例２では５８℃であった。一方、実装領域Ｒ外にダミー電極１１１が設けられている実施例２では、５９℃と、比較例２に比して若干昇温したが、実使用上は問題ない程度であった。   When the temperature of the protective element 3 was measured when 5 A was applied to each of the protective circuit boards according to Example 2 and Comparative Example 2, the dummy electrode 111 was formed across the mounting region R for heat dissipation. In Comparative Example 2, it was 58 ° C. On the other hand, in Example 2 in which the dummy electrode 111 was provided outside the mounting region R, the temperature was raised slightly to 59 ° C. compared to Comparative Example 2, but there was no problem in practical use.

［接続電極の幅］
ここで、接続電極２５（Ａ１），２５（Ａ２），２５（Ｐ２）は、図３、図６に示すように、接続対象となる保護素子３の外部接続端子２１（Ａ１），２１（Ａ２），２１（Ｐ２）の幅と略同じ幅で形成されている。これにより、回路基板２は、実装領域Ｒにおける熱容量の大きな電極パターンの面積を必要最小限に抑え、保護素子３からの放熱を抑制して効率よく可溶導体１３を加熱、溶断することができる。 [Connection electrode width]
Here, the connection electrodes 25 (A1), 25 (A2), and 25 (P2) are connected to the external connection terminals 21 (A1) and 21 (A2) of the protection element 3 to be connected, as shown in FIGS. ), 21 (P2). Thereby, the circuit board 2 can efficiently heat and blow the soluble conductor 13 while suppressing the area of the electrode pattern having a large heat capacity in the mounting region R to the necessary minimum, suppressing heat radiation from the protective element 3. .

［第２の形態］
また、回路基板２は、接続電極２５（Ａ１），２５（Ａ２）の実装領域Ｒ外の幅を、実装領域Ｒ内における幅よりも拡幅してもよい。例えば、図７に示すように、回路基板２は、接続電極２５（Ａ１），２５（Ａ２）の実装領域Ｒ内の幅Ｗ１を保護素子３の外部接続端子２１（Ａ１），２１（Ａ２）と略同じ幅に形成するとともに、実装領域Ｒ外の幅Ｗ２を絶縁基板１１の第１、第２の辺１１ｂ，１１ｃと同じ幅に形成してもよい。 [Second form]
Further, the circuit board 2 may expand the width of the connection electrodes 25 (A1) and 25 (A2) outside the mounting region R more than the width inside the mounting region R. For example, as shown in FIG. 7, the circuit board 2 has a width W1 in the mounting region R of the connection electrodes 25 (A1) and 25 (A2) and the external connection terminals 21 (A1) and 21 (A2) of the protection element 3. The width W2 outside the mounting region R may be formed to be the same width as the first and second sides 11b and 11c of the insulating substrate 11.

このように、回路基板２は、接続電極２５（Ａ１），２５（Ａ２）の幅を、実装領域Ｒ内においては保護素子３の外部接続端子２１（Ａ１），２１（Ａ２）と略同じに狭く形成することで、保護素子３の下部に形成された電極を必要最小限に抑えて放熱を抑制することができる。また、回路基板２は、接続電極２５（Ａ１），２５（Ａ２）の幅を、実装領域Ｒ外において拡幅し、保護素子３の絶縁基板１１と略同じ幅に形成することで、保護素子３からの放熱を抑制しながら、回路基板２の熱容量を増大させて高定格化に対する熱対策を図り、また接続電極２５（Ａ１），２５（Ａ２）の低抵抗化による高定格化を図ることができる。   Thus, in the circuit board 2, the width of the connection electrodes 25 (A1) and 25 (A2) is substantially the same as the external connection terminals 21 (A1) and 21 (A2) of the protection element 3 in the mounting region R. By forming it narrowly, the electrode formed in the lower part of the protective element 3 can be suppressed to the necessary minimum, and heat radiation can be suppressed. Further, the circuit board 2 is formed so that the widths of the connection electrodes 25 (A 1) and 25 (A 2) are widened outside the mounting region R and are formed to have substantially the same width as the insulating substrate 11 of the protection element 3. It is possible to increase the heat capacity of the circuit board 2 while suppressing heat dissipation from the circuit board and to take measures against heat to increase the rating, and to increase the rating by reducing the resistance of the connection electrodes 25 (A1) and 25 (A2). it can.

接続電極２５（Ａ１），２５（Ａ２）は、保護素子３の放熱抑制と、回路基板２の高定格化及び低抵抗化を図るために、図７に示すように、実装領域Ｒの直前で幅狭となるように形成することが好ましい。   As shown in FIG. 7, the connection electrodes 25 (A 1) and 25 (A 2) are provided immediately before the mounting region R in order to suppress the heat radiation of the protection element 3 and to increase the rating and resistance of the circuit board 2. It is preferably formed so as to be narrow.

次いで、第３の実施例について説明する。第３の実施例では、実装領域Ｒの内における接続電極２５（Ａ１），２５（Ａ２）の幅を変えた保護回路基板１を用意し、各可溶導体１３の溶断時間を測定した。   Next, a third embodiment will be described. In the third example, the protection circuit board 1 in which the widths of the connection electrodes 25 (A1) and 25 (A2) in the mounting region R were changed was prepared, and the fusing time of each soluble conductor 13 was measured.

比較例３に係る回路基板１２０は、図８に示すように、接続電極２５（Ａ１），２５（Ａ２）の幅Ｗを、実装領域Ｒの内外にわたって絶縁基板１１の第１、第２の辺１１ｂ，１１ｃの幅と同幅（４ｍｍ）で形成した。一方、実施例３に係る回路基板２は、実装領域Ｒ内においては保護素子３の外部接続端子２１（Ａ１），２１（Ａ２）と略同幅（２ｍｍ）で、実装領域Ｒ外においては絶縁基板１１の第１、第２の辺１１ｂ，１１ｃの幅と同幅（４ｍｍ）で形成した（図７参照）。また、実施例３及び比較例３に係る保護素子としては、上述した保護素子３を用いた。   As shown in FIG. 8, the circuit board 120 according to the comparative example 3 has the width W of the connection electrodes 25 (A1) and 25 (A2) set to the first and second sides of the insulating substrate 11 over the inside and outside of the mounting region R. It was formed with the same width (4 mm) as the width of 11b and 11c. On the other hand, the circuit board 2 according to the third embodiment has substantially the same width (2 mm) as the external connection terminals 21 (A1) and 21 (A2) of the protection element 3 in the mounting region R, and is insulated outside the mounting region R. The first and second sides 11b and 11c of the substrate 11 were formed to have the same width (4 mm) (see FIG. 7). Further, as the protective element according to Example 3 and Comparative Example 3, the protective element 3 described above was used.

そして、実施例３及び比較例３に係る保護素子３の各発熱体１４に１０Ｗの電力を印加し、可溶導体１３の溶断時間を比べたところ、比較例３に係る保護素子３では、可溶導体１３の溶断時間が３．５ｓｅｃであったのに対して、実施例３に係る保護素子３では、可溶導体１３の溶断時間が。１．６ｓｅｃとなり、速溶断性に優れていることが分かった。   And when 10 W of electric power was applied to each heating element 14 of the protection element 3 according to Example 3 and Comparative Example 3 and the fusing time of the soluble conductor 13 was compared, the protection element 3 according to Comparative Example 3 was acceptable. While the fusing time of the molten conductor 13 was 3.5 sec, in the protection element 3 according to Example 3, the fusing time of the soluble conductor 13 was long. It was 1.6 sec, and it was found that the fast fusing property was excellent.

また、実施例３と比較例３に係る保護回路基板に、それぞれ５Ａ通電させたときの、保護素子３の温度を測定したところ、実施例３及び比較例３ともに５５℃と同じであった。   Moreover, when the protection circuit board according to Example 3 and Comparative Example 3 was respectively energized with 5 A, the temperature of the protective element 3 was measured, and both Example 3 and Comparative Example 3 were the same as 55 ° C.

すなわち、比較例３では、接続電極２５（Ａ１），２５（Ａ２）が幅広に形成され、保護素子３の実装領域Ｒ内に、必要以上の面積で熱容量の大きな電極パターンが形成されているため、絶縁基板１１の下方へより多くの熱が放熱され、発熱体１４の熱が効率よく可溶導体１３へ伝わらなかった。これに対して、実施例３では、実装領域Ｒ内においては、接続電極２５（Ａ１），２５（Ａ２）が外部接続端子２１（Ａ１），２１（Ａ２）と略同幅で幅狭に形成されているため、絶縁基板１１の下方への放熱が抑制され効率よく可溶導体１３を加熱することができたことによる。   That is, in Comparative Example 3, the connection electrodes 25 (A 1) and 25 (A 2) are formed wide, and an electrode pattern having a larger heat capacity than the necessary area is formed in the mounting region R of the protection element 3. More heat was dissipated below the insulating substrate 11, and the heat of the heating element 14 was not efficiently transmitted to the soluble conductor 13. On the other hand, in the third embodiment, in the mounting region R, the connection electrodes 25 (A1) and 25 (A2) are formed to be substantially the same width and narrow as the external connection terminals 21 (A1) and 21 (A2). Therefore, heat radiation to the lower side of the insulating substrate 11 is suppressed, and the soluble conductor 13 can be efficiently heated.

一方、５Ａ通電時の保護素子３の温度は、実施例３及び比較例３ともに５５℃と同じであり、保護素子３の温度上昇率は同等であり、通常使用時における放熱性は同等であることが分かる。   On the other hand, the temperature of the protective element 3 when energized with 5A is the same as 55 ° C. in both Example 3 and Comparative Example 3, the rate of temperature increase of the protective element 3 is equivalent, and the heat dissipation during normal use is equivalent. I understand that.

なお、比較例３の構成において、接続電極２５（Ａ１），２５（Ａ２）に、実装領域Ｒ内の外部接続端子２１（Ａ１），２１（Ａ２）と接続する領域を除いてカバーレイを形成し、絶縁を図った場合も、１０Ｗ印加時の可溶導体１３の溶断時間は、カバーレイを形成しない場合と同じであった。これより、カバーレイによって実装領域Ｒ内における接続電極２５（Ａ１），２５（Ａ２）の露出面積を調整しても、放熱抑制効果はみられないことが分かった。   In the configuration of Comparative Example 3, coverlays are formed on the connection electrodes 25 (A1) and 25 (A2) except for regions connected to the external connection terminals 21 (A1) and 21 (A2) in the mounting region R. Even in the case of insulation, the fusing time of the fusible conductor 13 when 10 W was applied was the same as when the coverlay was not formed. From this, it was found that even if the exposed area of the connection electrodes 25 (A1) and 25 (A2) in the mounting region R was adjusted by the coverlay, the heat radiation suppressing effect was not seen.

次いで、第４の実施例について説明する。第４の実施例においても、実装領域Ｒの内における接続電極２５（Ａ１），２５（Ａ２）の幅を変えた保護回路基板１を用意し、各可溶導体１３の溶断時間を測定した。   Next, a fourth embodiment will be described. Also in the fourth example, the protection circuit board 1 in which the widths of the connection electrodes 25 (A1) and 25 (A2) in the mounting region R were changed was prepared, and the fusing time of each soluble conductor 13 was measured.

第４の実施例では、保護素子として、図１９に示す保護素子８０を用いた。上述したように、保護素子８０は、第１、第２の電極８１，８２が絶縁基板８５の一辺の中央から端部にかけて形成されるとともに、ハーフスルーホール９０、９１が、当該辺の端部に偏倚して形成されている。また、保護素子８０は、ハーフスルーホール９０、９１を介して第１、第２の電極８１，８２と接続され、回路基板９５に形成された第１、第２の接続電極９６，９７と接続される第１、第２の接続端子９２，９３も、絶縁基板８５の裏面において一辺の端部に偏倚して形成されている。   In the fourth embodiment, the protective element 80 shown in FIG. 19 is used as the protective element. As described above, in the protection element 80, the first and second electrodes 81 and 82 are formed from the center of one side to the end of the insulating substrate 85, and the half through holes 90 and 91 are provided at the end of the side. It is biased to form. The protection element 80 is connected to the first and second electrodes 81 and 82 through the half-through holes 90 and 91, and is connected to the first and second connection electrodes 96 and 97 formed on the circuit board 95. The first and second connection terminals 92 and 93 are also formed biased to the end of one side on the back surface of the insulating substrate 85.

比較例４に係る回路基板１２１は、図１０に示すように、接続電極２５（Ａ１），２５（Ａ２）の幅Ｗを、実装領域Ｒの内外にわたって絶縁基板８５の第１、第２の電極８１，８２が形成された辺の幅と同幅（Ｗ＝４ｍｍ）で形成した。一方、実施例４に係る回路基板２は、図９に示すように、実装領域Ｒ内においては保護素子８０の第１、第２の接続端子９２，９３と略同幅（Ｗ１＝２ｍｍ）で、実装領域Ｒ外においては絶縁基板８５の第１、第２の電極８１，８２が形成された辺の幅と同幅（Ｗ２＝４ｍｍ）で形成した。   As illustrated in FIG. 10, the circuit board 121 according to the comparative example 4 includes the first and second electrodes of the insulating substrate 85 with the width W of the connection electrodes 25 (A1) and 25 (A2) extending from the inside to the outside of the mounting region R. It was formed with the same width (W = 4 mm) as the side where 81 and 82 were formed. On the other hand, as shown in FIG. 9, the circuit board 2 according to the fourth embodiment has substantially the same width (W1 = 2 mm) as the first and second connection terminals 92 and 93 of the protection element 80 in the mounting region R. Outside the mounting region R, the insulating substrate 85 is formed to have the same width (W2 = 4 mm) as the width of the side where the first and second electrodes 81 and 82 are formed.

また、実施例４に係る回路基板２は、保護素子８０の第１、第２の接続端子９２，９３に応じて、実装領域Ｒ内における接続電極２５（Ａ１），２５（Ａ２）を、第１、第２の電極８１，８２が形成された辺の幅方向の一端側に偏倚させて形成した。   In addition, the circuit board 2 according to the fourth embodiment connects the connection electrodes 25 (A1) and 25 (A2) in the mounting region R in accordance with the first and second connection terminals 92 and 93 of the protection element 80. The first and second electrodes 81 and 82 are formed so as to be biased toward one end in the width direction of the side where the second electrodes 81 and 82 are formed.

そして、実施例４及び比較例４に係る保護素子８０の各発熱体８４に１０Ｗの電力を印加し、可溶導体８３の溶断時間を比べたところ、比較例４に係る保護素子８０では、可溶導体８３の溶断時間が３．９ｓｅｃであったのに対して、実施例４に係る保護素子８０では、可溶導体８３の溶断時間が。２．１ｓｅｃとなり、速溶断性に優れていることが分かった。   Then, when 10 W of electric power was applied to each heating element 84 of the protection element 80 according to Example 4 and Comparative Example 4 and the fusing time of the fusible conductor 83 was compared, the protection element 80 according to Comparative Example 4 was acceptable. While the fusing time of the molten conductor 83 was 3.9 sec, in the protection element 80 according to Example 4, the fusing time of the fusible conductor 83 was long. It became 2.1 sec, and it turned out that it is excellent in quick fusing property.

また、実施例４と比較例４に係る保護回路基板に、それぞれ５Ａ通電させたときの、保護素子８０の温度を測定したところ、比較例４では５６℃であるのに対し、実施例４は５７℃と、比較例４に比して若干昇温したが、実使用上は、問題ない程度であった。   Further, when the temperature of the protective element 80 when the protective circuit boards according to Example 4 and Comparative Example 4 were respectively energized with 5 A was measured, the temperature of Comparative Example 4 was 56 ° C., whereas Example 4 Although the temperature was raised slightly to 57 ° C. as compared with Comparative Example 4, it was not problematic in actual use.

すなわち、比較例３と同様に、比較例４においても、接続電極２５（Ａ１），２５（Ａ２）が幅広に形成され、保護素子８０の実装領域Ｒ内に、必要以上の面積で熱容量の大きな電極パターンが形成されているため、絶縁基板８５の下方へより多くの熱が放熱され、発熱体８４の熱が効率よく可溶導体８３へ伝わらなかった。これに対して、実施例４では、実施例３と同様に、実装領域Ｒ内においては、接続電極２５（Ａ１），２５（Ａ２）が第１、第２の接続端子９２，９３と略同幅で幅狭に形成されているため、絶縁基板８５の下方への放熱が抑制され効率よく可溶導体８３を加熱することができたことによる。   That is, similarly to the comparative example 3, in the comparative example 4, the connection electrodes 25 (A1) and 25 (A2) are formed wide, and in the mounting region R of the protective element 80, the area more than necessary and the heat capacity is large. Since the electrode pattern is formed, more heat is dissipated below the insulating substrate 85, and the heat of the heating element 84 is not efficiently transmitted to the soluble conductor 83. On the other hand, in the fourth embodiment, as in the third embodiment, in the mounting region R, the connection electrodes 25 (A1) and 25 (A2) are substantially the same as the first and second connection terminals 92 and 93. This is because the heat-dissipating conductor 83 can be efficiently heated because the heat radiation to the lower side of the insulating substrate 85 is suppressed because the width is narrow.

一方、５Ａ通電時の保護素子８０の温度は、実施例４は５７℃、比較例４は５６℃と、保護素子８０の温度上昇率は同等であり、通常使用時における放熱性は同等であることが分かる。   On the other hand, the temperature of the protective element 80 when energized with 5A is 57 ° C. in Example 4 and 56 ° C. in Comparative Example 4, and the temperature increase rate of the protective element 80 is the same, and the heat dissipation during normal use is the same. I understand that.

［第３の形態］
なお、上述した実施の形態では、接続電極２５（Ａ１），２５（Ａ２）の実装領域Ｒ外の幅Ｗ２を、絶縁基板１１の第１、第２の辺１１ｂ，１１ｃと同じ幅に形成したが、図１１に示すように、保護回路基板１は、実装領域Ｒを除いて、回路基板２の広範囲にわたって接続電極２５（Ａ１），２５（Ａ２）を形成してもよい。 [Third embodiment]
In the embodiment described above, the width W2 outside the mounting region R of the connection electrodes 25 (A1) and 25 (A2) is formed to be the same width as the first and second sides 11b and 11c of the insulating substrate 11. However, as shown in FIG. 11, the protective circuit board 1 may form connection electrodes 25 (A1) and 25 (A2) over a wide range of the circuit board 2 except for the mounting region R.

図１１に示すように、回路基板２は、接続電極２５（Ａ１），２５（Ａ２）の実装領域Ｒ内の幅Ｗ１を保護素子３の外部接続端子２１（Ａ１），２１（Ａ２）と略同じ幅に形成するとともに、実装領域Ｒ外の幅Ｗ２を回路基板２の幅方向に亘って広範に形成してもよい。   As shown in FIG. 11, in the circuit board 2, the width W1 in the mounting region R of the connection electrodes 25 (A1) and 25 (A2) is abbreviated as the external connection terminals 21 (A1) and 21 (A2) of the protection element 3. In addition to forming the same width, the width W2 outside the mounting region R may be formed widely over the width direction of the circuit board 2.

これにより、保護回路基板１は、電子機器の高容量化、高定格化に伴い通電電流が高くなった場合にも、発熱の抑制、あるいは放熱の促進を効率よく行うことができる。また、保護回路基板１は、回路基板２の実装領域Ｒを除く広範囲に接続電極２５（Ａ１），２５（Ａ２）を広げるとともに、必要な個所には、適宜カバーレイの形成、ソルダーレジストの印刷などにより絶縁を図ってもよい。   Thereby, the protection circuit board 1 can efficiently suppress the heat generation or promote the heat dissipation even when the energization current increases with the increase in capacity and rating of the electronic device. In addition, the protective circuit board 1 extends the connection electrodes 25 (A1) and 25 (A2) over a wide range excluding the mounting region R of the circuit board 2, and appropriately forms a cover lay and prints a solder resist at necessary places. Insulation may be achieved by, for example.

この場合も、保護回路基板１は、保護素子３の実装領域Ｒにおいては、接続電極２５（Ａ１），２５（Ａ２）の幅Ｗ１を外部接続端子２１（Ａ１），２１（Ａ２）と略同等とするとともに、他の不要電極を形成しないことにより、絶縁基板１１の下方への放熱を抑制し、効率よく可溶導体１３を加熱することができる。   Also in this case, the protection circuit board 1 has a width W1 of the connection electrodes 25 (A1) and 25 (A2) substantially equal to that of the external connection terminals 21 (A1) and 21 (A2) in the mounting region R of the protection element 3. In addition, by not forming other unnecessary electrodes, heat radiation to the lower side of the insulating substrate 11 can be suppressed, and the soluble conductor 13 can be efficiently heated.

次いで、第５の実施例について説明する。図１１、図１２に示すように、第５の実施例では、第３の実施例に比して、実装領域Ｒ外における接続電極２５（Ａ１），２５（Ａ２）の幅を大幅に広げ、回路基板２の広範囲にわたって形成した点で異なる。   Next, a fifth embodiment will be described. As shown in FIGS. 11 and 12, in the fifth embodiment, compared to the third embodiment, the width of the connection electrodes 25 (A1) and 25 (A2) outside the mounting region R is greatly increased. The difference is that the circuit board 2 is formed over a wide range.

すなわち、図１２に示すように、第５の実施例の比較例５に係る回路基板１３０は、接続電極２５（Ａ１），２５（Ａ２）の幅Ｗを、実装領域Ｒの内外にわたって回路基板２の幅方向に亘って広範に（Ｗ＝１２ｍｍ）で形成した。一方、図１１に示すように、第５の実施例の実施例５に係る回路基板２は、実装領域Ｒ内の幅Ｗ１を保護素子３の外部接続端子２１（Ａ１），２１（Ａ２）と略同幅（Ｗ１＝２ｍｍ）とし、実装領域Ｒ外の幅Ｗ２を回路基板２の幅方向に亘って広範に（Ｗ２＝１２ｍｍ）で形成した。また、実施例５及び比較例５に係る保護素子としては、上述した保護素子３を用いた。   That is, as shown in FIG. 12, the circuit board 130 according to the comparative example 5 of the fifth embodiment has the circuit board 2 with the width W of the connection electrodes 25 (A1) and 25 (A2) extending over the inside and outside of the mounting region R. A wide range (W = 12 mm) was formed in the width direction. On the other hand, as shown in FIG. 11, the circuit board 2 according to the fifth embodiment of the fifth embodiment has the width W1 in the mounting region R as the external connection terminals 21 (A1) and 21 (A2) of the protection element 3. The width W2 outside the mounting region R was formed in a wide range (W2 = 12 mm) across the width direction of the circuit board 2 with substantially the same width (W1 = 2 mm). Further, as the protective element according to Example 5 and Comparative Example 5, the protective element 3 described above was used.

そして、実施例５及び比較例５に係る保護素子３の各発熱体に１０Ｗの電力を印加し、可溶導体１３の溶断時間を比べたところ、比較例５に係る保護素子３では、可溶導体１３の溶断時間が５．８ｓｅｃであったのに対して、実施例５に係る保護素子３では、可溶導体１３の溶断時間が。２．４ｓｅｃとなり、速溶断性に優れていることが分かった。   And when 10 W electric power was applied to each heating element of the protection element 3 according to Example 5 and Comparative Example 5 and the fusing time of the soluble conductor 13 was compared, the protection element 3 according to Comparative Example 5 was soluble. While the fusing time of the conductor 13 was 5.8 sec, the fusing time of the fusible conductor 13 was longer in the protection element 3 according to Example 5. It was 2.4 sec, and it was found that the fast fusing property was excellent.

また、実施例５と比較例５に係る保護回路基板に、それぞれ５Ａ通電させたときの、保護素子３の温度を測定したところ、実施例５は４２℃、比較例５では４１℃であった。   Further, when the temperature of the protective element 3 was measured when 5 A was applied to the protective circuit boards according to Example 5 and Comparative Example 5, respectively, Example 5 was 42 ° C. and Comparative Example 5 was 41 ° C. .

第５の実施例においても、比較例５では、保護素子３の実装領域Ｒ内に、必要以上の面積で電極パターンが形成されているため、絶縁基板１１の下方より多くの熱が放熱され、発熱体１４の熱が効率よく可溶導体１３へ伝わらなかった。これに対して、実施例５では、実装領域Ｒ内においては、接続電極２５（Ａ１），２５（Ａ２）が外部接続端子２１（Ａ１），２１（Ａ２）と略同幅で幅狭に形成されているため、絶縁基板１１の下方への放熱が抑制され効率よく可溶導体１３を加熱することができた。   Also in the fifth example, in Comparative Example 5, since the electrode pattern is formed in an area larger than necessary in the mounting region R of the protection element 3, more heat is dissipated from below the insulating substrate 11, The heat of the heating element 14 was not efficiently transferred to the soluble conductor 13. On the other hand, in the fifth embodiment, in the mounting region R, the connection electrodes 25 (A1) and 25 (A2) are formed to be substantially the same width and narrow as the external connection terminals 21 (A1) and 21 (A2). Therefore, heat radiation to the lower side of the insulating substrate 11 is suppressed, and the soluble conductor 13 can be efficiently heated.

また、５Ａ通電時の保護素子３の温度は、実施例５で４２℃、比較例５で４１℃と、保護素子３の温度上昇率は同等であり、通常使用時における放熱性は同等であることが分かる。   Further, the temperature of the protective element 3 when energized with 5A is 42 ° C. in Example 5 and 41 ° C. in Comparative Example 5, and the temperature increase rate of the protective element 3 is the same, and the heat dissipation during normal use is the same. I understand that.

なお、比較例５に係る回路基板１３０の構成において、図１３に示すように、実装領域Ｒ内の接続電極２５（Ａ１），２５（Ａ２），２５（Ｐ２）の外部接続端子２１（Ａ１），２１（Ａ２），２１（Ｐ２）と接続する領域を除いてカバーレイ１３１を形成し、絶縁を図った場合も、１０Ｗ印加時の可溶導体１３の溶断時間は５．７ｓｅｃと、カバーレイ１３１を形成しない場合（図１２参照）とほぼ同じであった。これより、カバーレイによって実装領域Ｒ内における接続電極２５（Ａ１），２５（Ａ２），２５（Ｐ２）の露出面積を調整しても、放熱抑制効果はみられないことが分かった。   In the configuration of the circuit board 130 according to the comparative example 5, as shown in FIG. 13, the external connection terminals 21 (A1) of the connection electrodes 25 (A1), 25 (A2), and 25 (P2) in the mounting region R. , 21 (A2), and 21 (P2) except for the region connected to the coverlay 131, the insulation time of the coverlay 131 is 5.7 sec. This was almost the same as when 131 was not formed (see FIG. 12). From this, it was found that even if the exposed area of the connection electrodes 25 (A1), 25 (A2), and 25 (P2) in the mounting region R was adjusted by the coverlay, the effect of suppressing heat dissipation was not observed.

なお、５Ａ通電時の保護素子３の温度は、比較例５では４１℃であるのに対し、カバーレイを付した場合、４３℃と上昇し、通常使用時における放熱性は、カバーレイ１３１を付した場合にやや悪化することが分かる。   The temperature of the protective element 3 when energized with 5A is 41 ° C. in Comparative Example 5, whereas it increases to 43 ° C. when a coverlay is attached. It turns out that it gets a little worse when attached.

［第４の形態］
また、保護回路基板１は、回路基板２を絶縁層を介して複数の導電層を積層することにより多層化を図るとともに、実装領域Ｒの下方の導電パターンを削除してもよい。すなわち、図１４に示すように、回路基板を、銅箔が貼付されたガラスエポキシ基板等を積層して多層化した積層板３０として形成する。図１５に示すように、保護素子３が実装される第１導電層３１は、接続電極２５（Ａ１），２５（Ａ２），２５（Ｐ２）がパターニングされている。第１導電層３１の直下の第２導電層３２では、図１６に示すように、実装領域Ｒの投影面内における導電パターンが除去されている。 [Fourth form]
Further, the protective circuit board 1 may be multi-layered by laminating a plurality of conductive layers on the circuit board 2 via an insulating layer, and the conductive pattern below the mounting region R may be deleted. That is, as shown in FIG. 14, the circuit board is formed as a laminated board 30 in which a glass epoxy board or the like to which a copper foil is stuck is laminated to be multilayered. As shown in FIG. 15, the first conductive layer 31 on which the protection element 3 is mounted has the connection electrodes 25 (A1), 25 (A2), and 25 (P2) patterned. In the second conductive layer 32 immediately below the first conductive layer 31, the conductive pattern in the projection plane of the mounting region R is removed as shown in FIG.

これにより、保護素子３は、実装領域Ｒの下方には、実装に必要な接続電極２５（Ａ１），２５（Ａ２），２５（Ｐ２）を除き、熱容量の大きな電極パターンが設けられていないため、絶縁基板１１の下方への放熱を抑制される。したがって、保護回路基板１は、発熱体１４の熱を効率よく可溶導体１３へ伝え、速やかな溶断を実現することができる。   Accordingly, the protective element 3 is not provided with an electrode pattern having a large heat capacity below the mounting region R except for the connection electrodes 25 (A1), 25 (A2), and 25 (P2) necessary for mounting. The heat radiation to the lower side of the insulating substrate 11 is suppressed. Therefore, the protection circuit board 1 can efficiently transmit the heat of the heating element 14 to the fusible conductor 13 and realize quick fusing.

なお、第１導電層３１と第２導電層３２との間に設けられている第１絶縁層３５や第２導電層３２と第３導電層３３との間に設けられている第２絶縁層３６は、ガラスエポキシ基板等の熱容量の小さい材料で構成されているため、実装領域Ｒの下方に設けられていても、これによって放熱が促進することはない。また、回路基板２は、第３導電層３３以下の層においても、第２導電層３２と同様に、実装領域Ｒの投影面内における導電層を削除することが放熱抑制上、好ましい。   The first insulating layer 35 provided between the first conductive layer 31 and the second conductive layer 32 or the second insulating layer provided between the second conductive layer 32 and the third conductive layer 33. Since 36 is made of a material having a small heat capacity, such as a glass epoxy substrate, even if it is provided below the mounting region R, this does not promote heat dissipation. Further, in the circuit board 2, it is preferable to delete the conductive layer in the projection plane of the mounting region R in the layers below the third conductive layer 33 as well as the second conductive layer 32 in terms of heat dissipation suppression.

次いで、第６の実施例について説明する。第６の実施例では、４つの導電層３１〜３４が積層された厚さ０．８ｍｍの４層基板からなる回路基板３０を用い、第２層３２を、実装領域Ｒの投影面内における導電パターンを除去して形成した回路基板（図１５、実施例６）と、第２層３２を、実装領域Ｒの投影面を含め全面ベタで導電パターンを形成した回路基板（比較例６）とを形成してそれぞれ可溶導体１３の溶断時間を測定した。   Next, a sixth embodiment will be described. In the sixth embodiment, a circuit board 30 composed of a four-layer board having a thickness of 0.8 mm in which four conductive layers 31 to 34 are stacked is used, and the second layer 32 is electrically conductive in the projection plane of the mounting region R. A circuit board (FIG. 15, Example 6) formed by removing the pattern, and a circuit board (Comparative Example 6) in which the conductive pattern is formed on the entire surface of the second layer 32 including the projection surface of the mounting region R. The fusing time of each soluble conductor 13 was measured.

実施例６及び比較例６に用いた回路基板２は、図１４に示すように、保護素子３が実装される最上層から順に、厚さ３５μｍのＣｕパターンが形成された第１導電層３１、厚さ０．１ｍｍのガラスエポキシ基板からなる第１絶縁層３５、厚さ１２μｍのＣｕパターンが形成された第２導電層３２、厚さ０．６ｍｍのガラスエポキシ基板からなる第２絶縁層３６、厚さ１２μｍのＣｕパターンが形成された第３導電層３３、厚さ０．１ｍｍのガラスエポキシ基板からなる第３絶縁層３７、厚さ３５μｍのＣｕパターンが形成された第４導電層３４が形成されている。   As shown in FIG. 14, the circuit board 2 used in Example 6 and Comparative Example 6 has a first conductive layer 31 on which a Cu pattern with a thickness of 35 μm is formed in order from the uppermost layer on which the protective element 3 is mounted. A first insulating layer 35 made of a glass epoxy substrate having a thickness of 0.1 mm, a second conductive layer 32 having a Cu pattern having a thickness of 12 μm, a second insulating layer 36 made of a glass epoxy substrate having a thickness of 0.6 mm, A third conductive layer 33 formed with a Cu pattern having a thickness of 12 μm, a third insulating layer 37 made of a glass epoxy substrate having a thickness of 0.1 mm, and a fourth conductive layer 34 formed with a Cu pattern having a thickness of 35 μm are formed. Has been.

また、実施例６及び比較例６の第１導電層には、図１５に示すように、接続電極２５（Ａ１），２５（Ａ２），２５（Ｐ２）が形成されている。接続電極２５（Ａ１），２５（Ａ２）は、実装領域Ｒ内における幅Ｗ１が、保護素子３の外部接続端子２１（Ａ１），２１（Ａ２）と略同じ幅（Ｗ１＝２ｍｍ）に形成され、実装領域Ｒ外における幅Ｗ２が、絶縁基板１１の第１、第２の辺１１ｂ，１１ｃと略同じ幅（Ｗ２＝４ｍｍ）に形成されている。また、接続電極１５（Ｐ２）は、実装領域Ｒ内外にわたる幅Ｗ３が、保護素子３の外部接続端子２１（Ｐ２）と略同じ幅（Ｗ３＝２ｍｍ）に形成されている。   Further, as shown in FIG. 15, connection electrodes 25 (A 1), 25 (A 2), and 25 (P 2) are formed in the first conductive layers of Example 6 and Comparative Example 6. The connection electrodes 25 (A1) and 25 (A2) are formed so that the width W1 in the mounting region R is substantially the same as the external connection terminals 21 (A1) and 21 (A2) of the protection element 3 (W1 = 2 mm). The width W2 outside the mounting region R is formed to be substantially the same width (W2 = 4 mm) as the first and second sides 11b and 11c of the insulating substrate 11. Further, the connection electrode 15 (P2) has a width W3 extending in and out of the mounting region R so as to be substantially the same as the external connection terminal 21 (P2) of the protection element 3 (W3 = 2 mm).

実施例６では、図１６に示すように、第２層３２のＣｕパターンは、実装領域Ｒの投影面内において除去されている。なお、実施例６では、第３層３３、第４層３４の各Ｃｕパターンは、実装領域Ｒを含め第３絶縁層３７のガラスエポキシ基板全面にわたって形成されている。   In the sixth embodiment, as shown in FIG. 16, the Cu pattern of the second layer 32 is removed in the projection plane of the mounting region R. In Example 6, the Cu patterns of the third layer 33 and the fourth layer 34 are formed over the entire surface of the glass epoxy substrate of the third insulating layer 37 including the mounting region R.

比較例６では、第２導電層３２、第３導電層３３、第４導電層３４の各Ｃｕパターンは、実装領域Ｒを含め第２絶縁層３６及び第３絶縁層３７のガラスエポキシ基板全面にわたって形成されている。また、実施例６及び比較例６に係る保護素子としては、上述した保護素子３を用いた。   In Comparative Example 6, the Cu patterns of the second conductive layer 32, the third conductive layer 33, and the fourth conductive layer 34 are formed over the entire surface of the glass epoxy substrate of the second insulating layer 36 and the third insulating layer 37 including the mounting region R. Is formed. Further, as the protective element according to Example 6 and Comparative Example 6, the protective element 3 described above was used.

そして、実施例６及び比較例６に係る保護素子３の各発熱体１４に１０Ｗの電力を印加し、可溶導体１３の溶断時間を比べたところ、比較例６に係る保護素子３では、可溶導体１３の溶断時間が４．０ｓｅｃであったのに対して、実施例６に係る保護素子３では、可溶導体１３の溶断時間が。３．２ｓｅｃとなり、速溶断性に優れていることが分かった。   And when 10 W of electric power was applied to each heating element 14 of the protection element 3 according to Example 6 and Comparative Example 6 and the fusing times of the fusible conductors 13 were compared, the protection element 3 according to Comparative Example 6 was acceptable. While the fusing time of the molten conductor 13 was 4.0 sec, in the protection element 3 according to Example 6, the fusing time of the soluble conductor 13 was long. It was 3.2 sec, and it was found that the fast fusing property was excellent.

また、実施例６と比較例６に係る保護回路基板に、それぞれ５Ａ通電させたときの、保護素子３の温度を測定したところ、実施例６及び比較例６ともに４０℃と同じであった。   Moreover, when the protection circuit board according to Example 6 and Comparative Example 6 was respectively energized with 5 A, the temperature of the protective element 3 was measured, and both Example 6 and Comparative Example 6 were the same as 40 ° C.

これは、実施例６では、第２導電層３２は、実装領域Ｒの投影面内においてＣｕパターンが除去されていることから、実装領域Ｒに実装された保護素子３の下方には、第１導電層３１に形成された接続電極２５（Ａ１），２５（Ａ２），２５（Ｐ２）以外に、第２導電層３２まで、熱容量の大きな電極パターンが形成されていないことによる。発熱体１４の瞬間的な発熱は、絶縁基板１１の垂直方向に拡散しやすいことから、実施例６においては、当該垂直方向において必要最小限の電極パターンのみ形成しているため、放熱抑制が図られ、効率よく可溶導体１３を加熱することができた。   This is because, in Example 6, the second conductive layer 32 has the Cu pattern removed in the projection plane of the mounting region R, so that the first conductive layer 32 is below the protective element 3 mounted in the mounting region R. This is because an electrode pattern having a large heat capacity is not formed up to the second conductive layer 32 other than the connection electrodes 25 (A1), 25 (A2), and 25 (P2) formed on the conductive layer 31. Since the instantaneous heat generation of the heating element 14 is likely to diffuse in the vertical direction of the insulating substrate 11, in Example 6, since only the minimum electrode pattern is formed in the vertical direction, heat dissipation can be suppressed. As a result, the soluble conductor 13 could be efficiently heated.

［保護回路基板の使用方法］
次いで、保護回路基板１の使用方法について説明する。図１７に示すように、上述した保護回路基板１は、例えば、リチウムイオン二次電池のバッテリパック内の回路として用いられる。 [How to use protection circuit board]
Next, a method for using the protection circuit board 1 will be described. As shown in FIG. 17, the protection circuit board 1 described above is used as a circuit in a battery pack of a lithium ion secondary battery, for example.

たとえば、保護素子３は、合計４個のリチウムイオン二次電池のバッテリセル４１〜４４からなるバッテリスタック４５を有するバッテリパック４０に組み込まれて使用される。   For example, the protection element 3 is used by being incorporated in a battery pack 40 having a battery stack 45 including battery cells 41 to 44 of a total of four lithium ion secondary batteries.

バッテリパック４０は、バッテリスタック４５と、バッテリスタック４５の充放電を制御する充放電制御回路５０と、バッテリスタック４５の異常時に充電を遮断する本発明が適用された保護素子３と、各バッテリセル４１〜４４の電圧を検出する検出回路４６と、検出回路４６の検出結果に応じて保護素子３の動作を制御する電流制御素子４７とを備える。   The battery pack 40 includes a battery stack 45, a charge / discharge control circuit 50 that controls charging / discharging of the battery stack 45, a protection element 3 to which the present invention that cuts off charging when the battery stack 45 is abnormal, and each battery cell A detection circuit 46 that detects the voltages 41 to 44 and a current control element 47 that controls the operation of the protection element 3 according to the detection result of the detection circuit 46 are provided.

バッテリスタック４５は、過充電及び過放電状態から保護するための制御を要するバッテリセル４１〜４４が直列接続されたものであり、バッテリパック４０の正極端子４０ａ、負極端子４０ｂを介して、着脱可能に充電装置５５に接続され、充電装置５５からの充電電圧が印加される。充電装置５５により充電されたバッテリパック４０の正極端子４０ａ、負極端子４０ｂをバッテリで動作する電子機器に接続することによって、この電子機器を動作させることができる。   The battery stack 45 includes battery cells 41 to 44 that need to be controlled for protection from overcharge and overdischarge states, and can be attached and detached via the positive terminal 40a and the negative terminal 40b of the battery pack 40. Are connected to the charging device 55, and the charging voltage from the charging device 55 is applied. The electronic device can be operated by connecting the positive terminal 40a and the negative terminal 40b of the battery pack 40 charged by the charging device 55 to the electronic device operated by the battery.

充放電制御回路５０は、バッテリスタック４５から充電装置５５に流れる電流経路に直列接続された２つの電流制御素子５１、５２と、これらの電流制御素子５１、５２の動作を制御する制御部５３とを備える。電流制御素子５１、５２は、たとえば電界効果トランジスタ（以下、ＦＥＴと呼ぶ。）により構成され、制御部５３によりゲート電圧を制御することによって、バッテリスタック４５の電流経路の導通と遮断とを制御する。制御部５３は、充電装置５５から電力供給を受けて動作し、検出回路４６による検出結果に応じて、バッテリスタック４５が過放電又は過充電であるとき、電流経路を遮断するように、電流制御素子５１、５２の動作を制御する。   The charge / discharge control circuit 50 includes two current control elements 51 and 52 connected in series to a current path flowing from the battery stack 45 to the charging device 55, and a control unit 53 that controls operations of these current control elements 51 and 52. Is provided. The current control elements 51 and 52 are configured by, for example, field effect transistors (hereinafter referred to as FETs), and control the gate voltage by the control unit 53 to control conduction and interruption of the current path of the battery stack 45. . The control unit 53 operates by receiving power supply from the charging device 55, and controls the current so that the current path is interrupted when the battery stack 45 is overdischarged or overcharged according to the detection result by the detection circuit 46. The operation of the elements 51 and 52 is controlled.

保護素子３は、たとえば、バッテリスタック４５と充放電制御回路５０との間の充放電電流経路上に接続され、その動作が電流制御素子４７によって制御される。   The protection element 3 is connected, for example, on a charge / discharge current path between the battery stack 45 and the charge / discharge control circuit 50, and its operation is controlled by the current control element 47.

検出回路４６は、各バッテリセル４１〜４４と接続され、各バッテリセル４１〜４４の電圧値を検出して、各電圧値を充放電制御回路５０の制御部５３に供給する。また、検出回路４６は、いずれか１つのバッテリセル４１〜４４が過充電電圧又は過放電電圧になったときに電流制御素子４７を制御する制御信号を出力する。   The detection circuit 46 is connected to each battery cell 41 to 44, detects the voltage value of each battery cell 41 to 44, and supplies each voltage value to the control unit 53 of the charge / discharge control circuit 50. Further, the detection circuit 46 outputs a control signal for controlling the current control element 47 when any one of the battery cells 41 to 44 becomes an overcharge voltage or an overdischarge voltage.

電流制御素子４７は、たとえばＦＥＴにより構成され、検出回路４６から出力される検出信号によって、バッテリセル４１〜４４の電圧値が所定の過放電又は過充電状態を超える電圧になったとき、保護素子３を動作させて、バッテリスタック４５の充放電電流経路を電流制御素子５１、５２のスイッチ動作によらず遮断するように制御する。   The current control element 47 is composed of, for example, an FET, and when the voltage value of the battery cells 41 to 44 exceeds a predetermined overdischarge or overcharge state by a detection signal output from the detection circuit 46, the protection element 3 is operated to control the charge / discharge current path of the battery stack 45 to be cut off regardless of the switching operation of the current control elements 51 and 52.

以上のような構成からなるバッテリパック４０において、保護素子３の構成について具体的に説明する。   In the battery pack 40 having the above configuration, the configuration of the protection element 3 will be specifically described.

まず、本発明が適用された保護素子３は、図１８に示すような回路構成を有する。すなわち、保護素子３は、発熱体引出電極１６を介して直列接続された可溶導体１３と、可溶導体１３の接続点を介して通電して発熱させることによって可溶導体１３を溶融する発熱体１４とからなる回路構成である。また、保護素子３では、たとえば、可溶導体１３が充放電電流経路上に直列接続され、発熱体１４が電流制御素子４７と接続される。保護素子３の２個の電極１２は、それぞれ外部接続端子２１を介して、一方は、Ａ１に接続され、他方は、Ａ２に接続される。また、発熱体引出電極１６とこれに接続された発熱体電極１８は、Ｐ１に接続され、他方の発熱体電極１８は、外部接続端子２１を介してＰ２に接続される。   First, the protection element 3 to which the present invention is applied has a circuit configuration as shown in FIG. That is, the protective element 3 generates heat that melts the soluble conductor 13 by energizing the soluble conductor 13 connected in series via the heating element lead electrode 16 and the connection point of the soluble conductor 13 to generate heat. This is a circuit configuration comprising the body 14. In the protection element 3, for example, the fusible conductor 13 is connected in series on the charge / discharge current path, and the heating element 14 is connected to the current control element 47. One of the two electrodes 12 of the protection element 3 is connected to A1 via the external connection terminal 21, and the other is connected to A2. Further, the heating element extraction electrode 16 and the heating element electrode 18 connected thereto are connected to P1, and the other heating element electrode 18 is connected to P2 via the external connection terminal 21.

このような回路構成からなる保護素子３は、発熱体１４の発熱により、電流経路上の可溶導体１３を確実に溶断することができる。このとき、回路基板２の実装領域Ｒには、実装に必要な最小限の電極パターンのみ形成され、保護素子３の下方には熱容量の大きな不要な電極パターンが設けられていないため、保護素子３の絶縁基板１１の法線方向への放熱が抑制され、発熱体１４の熱を効率よく可溶導体１３へ伝えることができる。したがって、保護回路基板１は、可溶導体１３を速やかに溶断することができる。   The protection element 3 having such a circuit configuration can reliably melt the soluble conductor 13 on the current path by the heat generated by the heating element 14. At this time, only a minimum electrode pattern necessary for mounting is formed in the mounting region R of the circuit board 2, and an unnecessary electrode pattern having a large heat capacity is not provided below the protection element 3. The heat radiation in the normal direction of the insulating substrate 11 is suppressed, and the heat of the heating element 14 can be efficiently transmitted to the soluble conductor 13. Therefore, the protection circuit board 1 can quickly melt the soluble conductor 13.

なお、本発明の保護素子は、リチウムイオン二次電池のバッテリパックに用いる場合に限らず、電気信号による電流経路の遮断を必要とする様々な用途にももちろん応用可能である。   The protection element of the present invention is not limited to use in a battery pack of a lithium ion secondary battery, and can of course be applied to various uses that require interruption of a current path by an electric signal.

１ 保護回路基板、 ２ 回路基板、３ 保護素子、１１ 絶縁基板、１１ａ 裏面、１１ｂ 第１の辺、１１ｃ 第２の辺、１１ｄ 第３の辺、１２ 電極、１３ 可溶導体、１４ 発熱体、１５ 絶縁部材、１６ 発熱体引出電極、１７ フラックス、１８ 発熱体電極、２０ ハーフスルーホール、２１ 外部接続端子、２５ 接続電極、３０ 積層板、３１ 最上層、３２ 第２層、３３ 第３層、４０ バッテリパック、４１〜４４ バッテリセル、４５ バッテリスタック、４６ 検出回路、４７ 電流制御素子、５０ 充放電制御回路、５１，５２ 電流制御素子、５３ 制御部、５５ 充電装置 DESCRIPTION OF SYMBOLS 1 Protection circuit board, 2 Circuit board, 3 Protection element, 11 Insulation board | substrate, 11a Back surface, 11b 1st edge | side, 11c 2nd edge | side, 11d 3rd edge | side, 12 electrode, 13 soluble conductor, 14 heat generating body, DESCRIPTION OF SYMBOLS 15 Insulation member, 16 Heating body extraction electrode, 17 Flux, 18 Heating body electrode, 20 Half through hole, 21 External connection terminal, 25 Connection electrode, 30 Laminated board, 31 Top layer, 32 2nd layer, 33 3rd layer, 40 battery packs, 41 to 44 battery cells, 45 battery stack, 46 detection circuit, 47 current control element, 50 charge / discharge control circuit, 51, 52 current control element, 53 control unit, 55 charging device

Claims (5)

回路基板と、上記回路基板上に実装される保護素子とを有する保護回路基板において、
上記保護素子は、
絶縁基板と、
上記絶縁基板に形成された発熱体と、
上記絶縁基板に積層された第１及び第２の電極と、
上記絶縁基板の上記回路基板への実装面側の一側縁部に設けられ、上記第１の電極と連続する第１の接続端子と、
上記実装面側の他側縁部に設けられ、上記第２の電極と連続する第２の接続端子と、
上記第１及び第２の電極の間の電流経路上に設けられ、上記発熱体に電気的に接続された発熱体引出電極と、
上記発熱体引出電極から上記第１及び第２の電極にわたって積層され、熱により溶断することにより、該第１の電極と該第２の電極との間の電流経路を遮断する可溶導体とを備え、
上記回路基板は、上記保護素子が実装される領域内において、上記保護素子との接続電極を除き、上記保護素子の下側に電極パターンが設けられておらず、
上記回路基板は、上記第１、第２の接続端子と接続される第１、第２の接続電極を有し、
上記第１、第２の接続電極は、上記保護素子が実装される領域外において、上記絶縁基板の上記第１、第２の接続端子が設けられた側縁の幅以上の幅を有し、上記保護素子が実装される領域内において、上記絶縁基板の上記第１、第２の接続端子が設けられた側縁の幅より狭い幅を有する保護回路基板。 In a protection circuit board having a circuit board and a protection element mounted on the circuit board,
The protective element is
An insulating substrate;
A heating element formed on the insulating substrate;
First and second electrodes stacked on the insulating substrate;
A first connection terminal provided on one side edge of the insulating substrate on the side of the mounting surface to the circuit board and continuing to the first electrode;
A second connection terminal provided on the other side edge of the mounting surface side and continuous with the second electrode;
A heating element extraction electrode provided on a current path between the first and second electrodes and electrically connected to the heating element;
A soluble conductor that is laminated from the heating element extraction electrode to the first and second electrodes and is cut off by heat to cut off a current path between the first electrode and the second electrode. Prepared,
The circuit board is provided with no electrode pattern on the lower side of the protective element, except for a connection electrode with the protective element, in a region where the protective element is mounted ,
The circuit board has first and second connection electrodes connected to the first and second connection terminals,
The first and second connection electrodes have a width equal to or greater than the width of the side edge of the insulating substrate on which the first and second connection terminals are provided outside the region where the protection element is mounted. A protective circuit board having a width narrower than a width of a side edge provided with the first and second connection terminals of the insulating substrate in a region where the protective element is mounted . 上記第１、第２の接続電極は、上記第１、第２の接続端子の幅以上の幅を有する請求項１に記載の保護回路基板。 The protection circuit board according to claim 1, wherein the first and second connection electrodes have a width equal to or greater than a width of the first and second connection terminals. 回路基板と、上記回路基板上に実装される保護素子とを有する保護回路基板において、
上記保護素子は、
絶縁基板と、
上記絶縁基板に形成された発熱体と、
上記絶縁基板に積層された第１及び第２の電極と、
上記絶縁基板の上記回路基板への実装面側の一側縁部に設けられ、上記第１の電極と連続する第１の接続端子と、
上記実装面側の他側縁部に設けられ、上記第２の電極と連続する第２の接続端子と、
上記第１及び第２の電極の間の電流経路上に設けられ、上記発熱体に電気的に接続された発熱体引出電極と、
上記発熱体引出電極から上記第１及び第２の電極にわたって積層され、熱により溶断することにより、該第１の電極と該第２の電極との間の電流経路を遮断する可溶導体とを備え、
上記回路基板は、上記保護素子が実装される領域内において、上記保護素子との接続電極を除き、上記保護素子の下側に電極パターンが設けられておらず、
上記回路基板は、上記保護素子が実装される領域外において、ダミー電極が形成されている保護回路基板。 In a protection circuit board having a circuit board and a protection element mounted on the circuit board,
The protective element is
An insulating substrate;
A heating element formed on the insulating substrate;
First and second electrodes stacked on the insulating substrate;
A first connection terminal provided on one side edge of the insulating substrate on the side of the mounting surface to the circuit board and continuing to the first electrode;
A second connection terminal provided on the other side edge of the mounting surface side and continuous with the second electrode;
A heating element extraction electrode provided on a current path between the first and second electrodes and electrically connected to the heating element;
A soluble conductor that is laminated from the heating element extraction electrode to the first and second electrodes and is cut off by heat to cut off a current path between the first electrode and the second electrode. Prepared,
The circuit board is provided with no electrode pattern on the lower side of the protective element, except for a connection electrode with the protective element, in a region where the protective element is mounted,
The circuit board is a protection circuit board in which a dummy electrode is formed outside a region where the protection element is mounted . 回路基板と、上記回路基板上に実装される保護素子とを有する保護回路基板において、
上記保護素子は、
絶縁基板と、
上記絶縁基板に形成された発熱体と、
上記絶縁基板に積層された第１及び第２の電極と、
上記絶縁基板の上記回路基板への実装面側の一側縁部に設けられ、上記第１の電極と連続する第１の接続端子と、
上記実装面側の他側縁部に設けられ、上記第２の電極と連続する第２の接続端子と、
上記第１及び第２の電極の間の電流経路上に設けられ、上記発熱体に電気的に接続された発熱体引出電極と、
上記発熱体引出電極から上記第１及び第２の電極にわたって積層され、熱により溶断することにより、該第１の電極と該第２の電極との間の電流経路を遮断する可溶導体とを備え、
上記回路基板は、上記保護素子が実装される領域内において、上記保護素子との接続電極を除き、上記保護素子の下側に電極パターンが設けられておらず、
上記回路基板は、多層基板であり、上記保護素子の下側が、一又は複数層にわたって導電パターンが除去されている保護回路基板。 In a protection circuit board having a circuit board and a protection element mounted on the circuit board,
The protective element is
An insulating substrate;
A heating element formed on the insulating substrate;
First and second electrodes stacked on the insulating substrate;
A first connection terminal provided on one side edge of the insulating substrate on the side of the mounting surface to the circuit board and continuing to the first electrode;
A second connection terminal provided on the other side edge of the mounting surface side and continuous with the second electrode;
A heating element extraction electrode provided on a current path between the first and second electrodes and electrically connected to the heating element;
A soluble conductor that is laminated from the heating element extraction electrode to the first and second electrodes and is cut off by heat to cut off a current path between the first electrode and the second electrode. Prepared,
The circuit board is provided with no electrode pattern on the lower side of the protective element, except for a connection electrode with the protective element, in a region where the protective element is mounted,
The circuit board is a multilayer circuit board, and the conductive pattern is removed from one or more layers on the lower side of the protection element. 上記保護素子は、上記第１、第２の電極及び上記第１、第２の接続端子が、該第１、第２の電極が設けられた側縁の中央部に形成され、上記中央部に形成されたスルーホールを介して連続されている請求項１〜４のいずれか１項に記載の保護回路基板。 In the protective element, the first and second electrodes and the first and second connection terminals are formed in a central portion of a side edge where the first and second electrodes are provided, The protective circuit board according to any one of claims 1 to 4 , which is continuous through the formed through hole.
JP2013164517A 2013-08-07 2013-08-07 Protection circuit board Active JP6231324B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2013164517A JP6231324B2 (en) 2013-08-07 2013-08-07 Protection circuit board

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2013164517A JP6231324B2 (en) 2013-08-07 2013-08-07 Protection circuit board

Publications (2)

Publication Number Publication Date
JP2015035280A JP2015035280A (en) 2015-02-19
JP6231324B2 true JP6231324B2 (en) 2017-11-15

Family

ID=52543687

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2013164517A Active JP6231324B2 (en) 2013-08-07 2013-08-07 Protection circuit board

Country Status (1)

Country Link
JP (1) JP6231324B2 (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10032583B2 (en) 2016-02-17 2018-07-24 Dexerials Corporation Protective circuit substrate
JP6707377B2 (en) * 2016-03-23 2020-06-10 デクセリアルズ株式会社 Protective element
JP1701719S (en) * 2021-01-18 2021-12-06
JP1701720S (en) * 2021-01-18 2021-12-06
JP1701718S (en) * 2021-01-18 2021-12-06

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000173427A (en) * 1998-12-03 2000-06-23 Nec Kansai Ltd Protect device assembly structural body and protect device
JP2000285777A (en) * 1999-03-31 2000-10-13 Nec Kansai Ltd Protective element
JP2004022290A (en) * 2002-06-14 2004-01-22 Nec Schott Components Corp Structure for mounting chip-type thermal fuse
JP5072796B2 (en) * 2008-05-23 2012-11-14 ソニーケミカル＆インフォメーションデバイス株式会社 Protection element and secondary battery device

Also Published As

Publication number Publication date
JP2015035280A (en) 2015-02-19

Similar Documents

Publication Publication Date Title
JP6336725B2 (en) Protective element and protective circuit board using the same
JP6437253B2 (en) Protective element and mounting body
JP6576618B2 (en) Protective element
JP6371118B2 (en) Protective element and battery pack
WO2015156019A1 (en) Protection element, protection circuit and battery circuit
WO2020129406A1 (en) Protection element and battery pack
TWI765940B (en) Protection element
JP6231324B2 (en) Protection circuit board
CN109937464B (en) Protective element
WO2016017567A1 (en) Protection element and protection circuit
WO2020209071A1 (en) Protection element and battery pack
KR102043051B1 (en) Protective element
JP6621255B2 (en) Protection element, fuse element
US20170236667A1 (en) Protective element and protective circuit substrate using the same
JP6254859B2 (en) Breaking element, breaking element circuit,
WO2015159570A1 (en) Protective element
JP6058476B2 (en) Protective element and mounting body on which protective element is mounted
JP6078332B2 (en) Protection element, battery module
JP6231323B2 (en) Protective element and protective circuit board using the same
US10032583B2 (en) Protective circuit substrate
JP2018018835A (en) Protection element and fuse element
JP6202992B2 (en) Protective circuit, battery circuit, protective element, and driving method of protective element
JP7390825B2 (en) Protection element, battery pack
WO2015107632A1 (en) Protective element
WO2015107633A1 (en) Protective element and battery module

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20160610

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20170224

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20170228

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20170428

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20170629

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20171010

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20171019

R150 Certificate of patent or registration of utility model

Ref document number: 6231324

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250