JP6215907B2 - セルフモード同期半導体ディスクレーザ(sdl) - Google Patents
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Description
第1及び第2のミラーで終端し、第3のミラーで折り返す共振器であって、当該第3のミラーが少なくとも一の量子ウエル層と光学カーレンズ効果を示す層とを有する多層半導体利得媒体を載置している共振器を具え、
当該共振器の長さが、キャビティモードの往復時間が、前記利得媒体中に配置した一またはそれ以上の半導体キャリアのアッパー状態寿命に対応するように選択されている。
第1及び第2のミラーで終端しており、第3のミラーで折り返された共振器を提供するステップであって、第3のミラーが少なくとも一の量子ウエル層と光学カーレンズ効果を示す層を具える多層半導体利得媒体に載置されている、ステップと;
共振器の長さを、キャビティモードの往復時間が利得媒体中に配置した一またはそれ以上の半導体キャリアのアッパー状態寿命に対応するように選択するステップ;
を具えている。
第1及び第2のミラーで終端しており、第3のミラーで折り返した共振器であって、当該第3のミラーが少なくとも一の量子ウエル層と光学的カーレンズ効果を示す層を含む多層半導体利得媒体に装着されている共振器と;
その出力が前記利得媒体を励起するように構成された連続波(cw)光学場源と;を具え、
前記共振器の長さが、キャビティモードの往復時間が、前記利得媒体内に配置された一またはそれ以上の半導体キャリアのアッパー状態寿命に対応するように、選択されていることを特徴とする。
第1及び第2のミラーで終端しており、第3のミラーで折り返す共振器であって、当該第3のミラーが少なくとも一の量子ウエル層と光学的カーレンズ効果を示す層を具える多層半導体利得媒体に装着されている共振器を提供するステップと;
前記利得媒体を励起するように構成された連続波(cw)光学場を提供するステップと;
前記共振器の長さが、キャビティモードの往復時間が、前記利得媒体内に配置された一またはそれ以上の半導体キャリアのアッパー状態寿命に対応するように、選択するステップと;
を具える。
第1及び第2のミラーで終端しており、第3のミラーで折り返す共振器であって、当該第3のミラーが少なくとも一の量子ウエル層と光学的カーレンズ効果を示す層を含む多層半導体利得媒体に装着されている共振器と;
前記利得媒体でキャビティモード非点収差を導入する手段を提供する非点収差コントローラと;
を具え、共振器が、カーレンズ効果を示す層がキャビティモードに導入された非点収差を相殺するように作用するように構成されている。
第1及び第2のミラーで終端し、第3のミラーで折り返した共振器であって、第3のミラーが少なくとも1の量子ウエル層と光学的カーレンズ効果を示す層を含む多層半導体利得媒体に装着されている、共振器を提供するステップと;
利得媒体においてキャビティモードに非点収差を導入するステップと;
カーレンズ効果を示す層がキャビティモードに導入された非点収差を相殺するように作用するように共振器を構成するステップと;
を具える。
Claims (18)
- セルフモード同期レーザにおいて、
第1及び第2のミラーで終端し、第3のミラーで折り返され、当該第3のミラーが、少なくとも一の量子ウエル層と、光学的カーレンズ効果を示す層を具える多層半導体利得媒体に装填されている共振器を具え、
前記共振器の長さが、キャビティモードの往復時間が、前記利得媒体内に配置した一またはそれ以上の半導体キャリアのアッパー状態寿命に一致するように選択され、それによりレーザの出力場の強度に摂動を引き起こして、光学的カーレンズ効果を示す層に出力場でモード同期を生じさせることを特徴とするセルフモード同期レーザ。 - 請求項1に記載のセルフモード同期レーザにおいて、前記光学的カーレンズ効果を示す層が、前記半導体利得媒体上に装着した熱スプレッダを具えることを特徴とするセルフモード同期レーザ。
- 請求項2に記載のセルフモード同期レーザにおいて、前記熱スプレッダがダイヤモンドクリスタル層を具えることを特徴とするセルフモード同期レーザ。
- 請求項1乃至3のいずれか1項に記載のセルフモード同期レーザにおいて、前記共振器が更に当該共振器に配置した開口を有する開口絞りを具えることを特徴とするセルフモード同期レーザ。
- 請求項4に記載のセルフモード同期レーザにおいて、前記開口が前記第2のミラー近傍に配置されていることを特徴とするセルフモード同期レーザ。
- 請求項1乃至5のいずれか1項に記載のセルフモード同期レーザにおいて、前記共振器が更に、第4のミラーで折り返されており、当該第4のミラーが前記第2のミラーと第3のミラーとの間に配置されていることを特徴とするセルフモード同期レーザ。
- 請求項6に記載のセルフモード同期レーザにおいて、前記共振器が更に、第5のミラーで折り返されており、当該第5のミラーが前記第2及び第4のミラーの間に配置されていることを特徴とするセルフモード同期レーザ。
- 請求項7に記載のセルフモード同期レーザにおいて、前記共振器がさらに、第6のミラーで折り返されており、当該第6のミラーが前記第2及び第5のミラーの間に配置されていることを特徴とするセルフモード同期レーザ。
- 請求項1乃至8のいずれか1項に記載のセルフモード同期レーザにおいて、前記共振器が更に、前記利得媒体において前記キャビティモードに非点収差を導入する手段を具える非点収差コントローラを具えることを特徴とするセルフモード同期レーザ。
- 請求項9に記載のセルフモード同期レーザにおいて、前記共振器が、前記カーレンズ効果を示す層が、前記キャビティモードに導入した非点収差を相殺するよう作用するように構成されていることを特徴とするセルフモード同期レーザ。
- セルフモード同期レーザを作成する方法において、
第1及び第2のミラーによって終端し、第3のミラーによって折り返す共振器であって、前記第3のミラーが、少なくとも一の量子ウエル層と光学的カーレンズ効果を示す層を具える多層半導体利得媒体に装填されている共振器を提供するステップと;
前記共振器の長さを、キャビティモードの往復時間が前記利得媒体内に配置した一またはそれ以上の半導体キャリアのアッパー状態寿命に一致するように選択し、それによりレーザの出力場の強度に摂動を引き起こして、光学的カーレンズ効果を示す層に出力場でモード同期を生じさせるステップと;
を具えることを特徴とするセルフモード同期レーザの作成方法。 - 請求項11に記載のセルフモード同期レーザの製造方法において、当該方法が更に、その中に配置した開口を有する開口絞りを前記共振器に配置するステップを具えることを特徴とするセルフモード同期レーザの製造方法。
- 請求項12に記載のセルフモード同期レーザの作成方法において、前記開口が前記第1のミラー近傍に配置されていることを特徴とするセルフモード同期レーザの製造方法。
- 請求項11乃至13のいずれか1項に記載のセルフモード同期レーザの作成方法において、当該方法が更に、前記第2のミラーと第3のミラーの間に第4のミラーを提供することによって、前記キャビティを折り返すステップを具えることを特徴とするセルフモード同期レーザの製造方法。
- 請求項14に記載のセルフモード同期レーザの製造方法において、当該方法が更に、前記第2のミラーと第4のミラーの間に第5のミラーを提供することによって、前記キャビティを折り返すステップを具えることを特徴とするセルフモード同期レーザの製造方法。
- 請求項15に記載のセルフモード同期レーザの製造方法において、前記方法が更に、前記第2のミラーと第5のミラーの間に第6のミラーを提供することによって、前記キャビティを折り返すステップを具えることを特徴とするセルフモード同期レーザの製造方法。
- 請求項11乃至16に記載のセルフモード同期レーザの製造方法において、当該方法が前記利得媒体で前記キャビティモードに非点収差を導入するステップを具えることを特徴とするセルフモード同期レーザの製造方法。
- 請求項17に記載のセルフモード同期レーザの製造方法において、当該方法が更に、前記共振器を前記カーレンズ効果を示す層が、前記キャビティモードに導入した非点収差を相殺するように作用するように構成したことを特徴とするセルフモード同期レーザの製造方法。
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GB2519773C (en) * | 2013-10-29 | 2018-01-03 | Solus Tech Limited | Mode-locking semiconductor disk laser (SDL) |
GB2521140B (en) * | 2013-12-10 | 2018-05-09 | Solus Tech Limited | Improved self mode-locking semiconductor disk laser (SDL) |
GB2526063B (en) * | 2014-04-28 | 2016-10-26 | Solus Tech Ltd | Optical amplifier |
CN105124960A (zh) * | 2015-09-17 | 2015-12-09 | 河海大学常州校区 | 一种一体式折叠椅 |
CN115437193B (zh) * | 2022-09-13 | 2024-07-30 | 电子科技大学 | 一种锁定克尔光孤子重复频率噪声的方法 |
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GB2399942A (en) * | 2003-03-24 | 2004-09-29 | Univ Strathclyde | Vertical cavity semiconductor optical devices |
US7362787B2 (en) | 2005-10-28 | 2008-04-22 | Lucent Technologies Inc. | Self-mode-locked semiconductor laser |
US20070223540A1 (en) * | 2006-01-27 | 2007-09-27 | Time-Bandwidth Products Ag | Pulsed laser |
US20090290606A1 (en) * | 2008-05-23 | 2009-11-26 | Chilla Juan L | Mode-locked external-cavity surface-emitting semiconductor laser |
GB0906482D0 (en) * | 2009-04-15 | 2009-05-20 | Univ St Andrews | intra-cavity optical parametric oscillator |
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