JP6213994B2 - Method for forming hydrophilic pattern for printing conductive film with photo-oxidant - Google Patents
Method for forming hydrophilic pattern for printing conductive film with photo-oxidant Download PDFInfo
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- Materials For Photolithography (AREA)
- Electrodes Of Semiconductors (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Description
本発明は、光酸化剤を用い、疎水性表面に親水性パターンを正確、高精度に形成する技術に関する。より具体的には、プリンテッド・エレクトロニクス(Printed Electronics)等の技術分野において、電極、配線等の導電性膜をはじめとした各種のパターンを形成する際に好適に利用することのできる親水性パターンを正確、高精度に形成する技術に関する。 The present invention relates to a technique for accurately and highly accurately forming a hydrophilic pattern on a hydrophobic surface using a photooxidant. More specifically, in a technical field such as Printed Electronics, a hydrophilic pattern that can be suitably used when forming various patterns including conductive films such as electrodes and wiring. The present invention relates to a technology for accurately and highly accurately forming a film.
プリンテッド・エレクトロニクス(Printed Electronics)は、印刷技術を利用して電子回路、デバイス等を形成するもので、低コスト化、生産性向上、さらには省資源など環境調和性にも期待されている。その生産・実用化の製品開発分野は、フレキシブル配線技術開発、太陽電池製品の開発、有機ＥＬディスプレイ・デジタルサイネージ・電子ペーパ開発、センサ技術、ヘルスケア技術開発、など、非常に多岐に渡っている。 Printed electronics, which uses printing technology to form electronic circuits and devices, is expected to reduce costs, improve productivity, and conserve the environment. The production / practical product development fields are very diverse, such as flexible wiring technology development, solar cell product development, organic EL display / digital signage / electronic paper development, sensor technology, healthcare technology development, etc. .
そのようなプリンテッド・エレクトロニクスにおける配線や電極等の導電性パターン形成技術に利用できるものとして、光酸化剤水溶液が塗布された疎水性表面を所定パターンで光照射処理して所定の親水性パターンを形成する技術が注目されている(例えば、特許文献１〜３参照)。 As a technique that can be used for conductive pattern formation technology such as wiring and electrodes in such printed electronics, a hydrophobic surface coated with an aqueous photooxidant solution is irradiated with a predetermined pattern to form a predetermined hydrophilic pattern. The forming technique is attracting attention (see, for example, Patent Documents 1 to 3).
前述の光酸化剤水溶液が塗布された疎水性表面を光照射処理して親水性パターンを形成する技術は、比較的簡単、低コストのプロセスである等の長所を有するが、形成される親水性パターンがフォトマスクの光照射パターンよりも大きくなってしまうという問題点があり、所望の導電性パターン等を正確、高精度に形成できない欠点がある。
本発明は、このような問題点や欠点を解決し、光酸化剤水溶液が塗布された疎水性表面を光照射処理して親水性パターンを形成する技術において、光照射パターンよりも大きくならない正確、高精度、又は、所定の割合で縮小した親水性パターンを形成する親水性パターン形成方法を提供することを課題とする。
The technique of forming a hydrophilic pattern by light irradiation treatment of the hydrophobic surface coated with the aqueous photooxidant solution described above has advantages such as a relatively simple and low-cost process. There is a problem that the pattern becomes larger than the light irradiation pattern of the photomask, and there is a drawback that a desired conductive pattern or the like cannot be formed accurately and with high accuracy.
The present invention solves such problems and drawbacks, and in the technology for forming a hydrophilic pattern by light irradiation treatment of a hydrophobic surface coated with an aqueous photooxidant solution, it is accurate not to be larger than the light irradiation pattern, It is an object of the present invention to provide a hydrophilic pattern forming method for forming a hydrophilic pattern that is highly accurate or reduced at a predetermined ratio.
本発明者は鋭意検討した結果、光酸化剤水溶液としてアルコールが添加されたものを用いることにより、光照射により形成される親水性パターンをフォトマスク等による光照射のパターンと同じか縮小した形状に調整できることを知見した。 As a result of intensive studies, the present inventors have used a photooxidant aqueous solution to which alcohol has been added, so that the hydrophilic pattern formed by light irradiation has the same or reduced shape as the light irradiation pattern by a photomask or the like. It was found that it can be adjusted.
本発明は、このような知見に基づくものであり、本件では、次のような発明が提供される。
（１）疎水性表面に光酸化剤の水溶液膜を形成した後、該水溶液膜で被覆された疎水性表面のうち所定パターン領域を光照射し、親水性パターンを形成する親水性パターン形成方法において、該光酸化剤の水溶液としてアルコールが添加されたものを用いることを特徴とする、親水性パターン形成方法。
（２）前記疎水性表面は、基材表面に自己組織化単分子膜が形成されたものであることを特徴とする、(１)に記載の親水性パターン形成方法。
（３）前記基材が金属であり、前記自己組織化単分子膜の単分子がアルカンチオールであることを特徴とする、(１)または(２)に記載の親水性パターン形成方法。
（４）前記光酸化剤は、過硫酸ナトリウム、過硫酸アンモニウム、過硫酸カリウムから選択される１種又は２種以上であることを特徴とする、(１)〜(３)のいずれか１項に記載の親水性パターン形成方法。
（５）上記(１)〜(４)のいずれか１項に記載の方法で形成された親水性パターンに導電性膜を形成することを特徴とする、導電性パターン膜形成方法。
The present invention is based on such knowledge, and the following invention is provided in this case.
(1) In a hydrophilic pattern forming method, after forming an aqueous solution film of a photooxidant on a hydrophobic surface, a predetermined pattern region of the hydrophobic surface covered with the aqueous solution film is irradiated with light to form a hydrophilic pattern. A method for forming a hydrophilic pattern, comprising using an aqueous solution of the photo-oxidant to which an alcohol is added.
(2) The method for forming a hydrophilic pattern according to (1), wherein the hydrophobic surface is formed by forming a self-assembled monolayer on the surface of a substrate.
(3) The hydrophilic pattern forming method according to (1) or (2), wherein the base material is a metal, and a single molecule of the self-assembled monolayer is alkanethiol.
(4) The photooxidizer is one or more selected from sodium persulfate, ammonium persulfate, and potassium persulfate, according to any one of (1) to (3), The hydrophilic pattern formation method of description.
(5) A method for forming a conductive pattern film, comprising forming a conductive film on the hydrophilic pattern formed by the method according to any one of (1) to (4) above.
また、本発明は、次のような態様を含むことができる。
（６）前記光酸化剤の水溶液におけるアルコール添加量が0.001〜1ｗｔ％であることを特徴とする、親水性パターン形成方法。
（７）前記金属が金であり、前記アルカンチオールが炭素数7〜30のものであることを特徴とする、(３)に記載の親水性パターン形成方法。
（８）前記アルコールが、メタノール、エタノール、プロピルアルコール、イソプロピルアルコール、ブタノールから選択される１種又は２種以上であることを特徴とする、(１)〜(４)、(６)、(７)のいずれか１項に記載の親水性パターン形成方法。
（９）上記(６)〜(８)のいずれか１項に記載の方法で形成された親水性パターンに導電性膜を形成することを特徴とする、導電性パターン膜形成方法。
In addition, the present invention can include the following aspects.
(6) The hydrophilic pattern forming method, wherein the amount of alcohol added in the aqueous solution of the photooxidant is 0.001 to 1 wt%.
(7) The method for forming a hydrophilic pattern according to (3), wherein the metal is gold and the alkanethiol has 7 to 30 carbon atoms.
(8) The alcohol is one or more selected from methanol, ethanol, propyl alcohol, isopropyl alcohol, and butanol, (1) to (4), (6), (7 The hydrophilic pattern formation method of any one of 1).
(9) A method for forming a conductive pattern film, comprising forming a conductive film on the hydrophilic pattern formed by the method according to any one of (6) to (8) above.
本発明の方法によれば、各種の疎水性表面に比較的簡単で低コストの操作で、光照射パターンよりも大きくならない正確、高精度、又は、所定の割合で縮小した種々の親水性パターンを形成することができる。また、形成された親水性パターンは、正確、高精度の導電性パターン膜の形成に利用することができる。 According to the method of the present invention, various hydrophilic patterns reduced to a predetermined ratio can be obtained on various hydrophobic surfaces with a relatively simple and low-cost operation with accuracy, high accuracy, or reduced at a predetermined ratio that does not become larger than the light irradiation pattern. Can be formed. Further, the formed hydrophilic pattern can be used for forming an accurate and highly accurate conductive pattern film.
本発明の親水性パターンの形成方法は、疎水性表面に光酸化剤の水溶液膜を形成した後、該水溶液膜で被覆された疎水性表面のうち所定パターン領域を光照射し、親水性パターンを形成する技術において、前記光酸化剤の水溶液としてアルコールが添加されたものを用いる点に特徴を有している。
アルコールを添加しない光酸化剤水溶液を用いる場合、形成される親水性パターンは、光照射領域よりも大きなパターン(光照射領域を拡大したパターン)となってしまうが、アルコールを添加した光酸化剤水溶液を用いた場合、アルコール添加量を調整することにより、光照射領域と同じ正確な高精度の形状としたり、光照射領域を所定の割合で縮小した形状のパターンとしたりすることができる。
以下、本発明の発明特定事項ごとに具体的に説明する。
In the method for forming a hydrophilic pattern of the present invention, after forming an aqueous solution film of a photooxidant on a hydrophobic surface, a predetermined pattern region of the hydrophobic surface covered with the aqueous solution film is irradiated with light to form a hydrophilic pattern. The forming technique is characterized in that an aqueous solution of the photo-oxidizing agent to which alcohol is added is used.
When using an aqueous photo-oxidant solution that does not contain alcohol, the hydrophilic pattern that is formed will be a larger pattern than the light-irradiated region (a pattern that expands the light-irradiated region). In the case of using, by adjusting the amount of alcohol added, it is possible to obtain the same accurate and highly accurate shape as the light irradiation region, or a pattern having a shape obtained by reducing the light irradiation region at a predetermined ratio.
Hereinafter, each invention specific matter of the present invention will be specifically described.
（疎水性表面）
本発明において、疎水性表面とは、水に対する接触角が50°以上、好ましくは70°以上の表面をいう。
本発明で用いる疎水性表面は、疎水性材料からなる基材の疎水性表面であってもよいし、各種の基材の表面を塗布、被覆等の各種処理によって基材表面上に形成されたものであってもよい。
基材を構成する疎水性材料や、基材表面上の疎水性表面となる塗布乃至被覆材料の疎水性材料としては、限定するものではないが、各種樹脂、自己組織化膜を形成する単分子等が挙げられる。
各種樹脂としては、限定するものではないが、ポリエステル系樹脂、ポリビニルアセタール系樹脂、ウレタン系樹脂、アミド系樹脂、セルロース系樹脂、オレフィン系樹脂、塩化ビニル系樹脂、アクリル系樹脂、スチレン系樹脂、ポリカーボネート、ポリサルフォン、ポリカプロラクトン樹脂、ポリアクリロニトリル樹脂、尿素樹脂、エポキシ樹脂、フェノキシ樹脂等が挙げられ、これらの樹脂は、１種単独でもよいし、２種以上併用することもできる。
自己組織化膜を形成する単分子としては、限定するものではないが、チオール基を有するもの、リン酸基を有するもの、ホスホン基を有するもの等、一端が基材に結合し他端部が疎水性を示すものをいずれも用いることができる。チオール基を有するものとしては、限定するものではないが、アルカンチオール、環状チオール等を挙げることができる。アルカンチオールとしては、炭素数が7〜30、より好ましくは10〜20、さらに好ましくは12〜18のものが挙げられる。アルカンチオールは、自己組織化能や疎水性表面形成能を大きく阻害しない範囲で各種の置換基を有するものとすることができる。
塗布、被覆等の各種処理によって基材表面上に疎水性表面を形成する場合の基材としては、限定するものではないが、金、銀、銅、アルミニウム等の金属や合金、ハンダ用合金、上述のような樹脂やそれらの樹脂表面が親水化処理されたもの、各種セラミックス等を挙げることができる。
(Hydrophobic surface)
In the present invention, the hydrophobic surface means a surface having a contact angle with water of 50 ° or more, preferably 70 ° or more.
The hydrophobic surface used in the present invention may be a hydrophobic surface of a base material made of a hydrophobic material, or formed on the surface of the base material by various treatments such as coating and coating the surface of various base materials. It may be a thing.
The hydrophobic material constituting the base material and the hydrophobic material of the coating or coating material that forms the hydrophobic surface on the base material surface is not limited, but includes various resins and single molecules that form a self-assembled film. Etc.
Various resins include, but are not limited to, polyester resins, polyvinyl acetal resins, urethane resins, amide resins, cellulose resins, olefin resins, vinyl chloride resins, acrylic resins, styrene resins, Examples thereof include polycarbonate, polysulfone, polycaprolactone resin, polyacrylonitrile resin, urea resin, epoxy resin, phenoxy resin, and the like. These resins may be used alone or in combination of two or more.
The monomolecule forming the self-assembled film is not limited, but one having a thiol group, one having a phosphate group, one having a phosphone group, and the other end is bonded to the substrate. Any of those exhibiting hydrophobicity can be used. Examples of those having a thiol group include, but are not limited to, alkane thiols and cyclic thiols. Examples of the alkanethiol include those having 7 to 30 carbon atoms, more preferably 10 to 20 carbon atoms, and still more preferably 12 to 18 carbon atoms. The alkanethiol can have various substituents as long as the self-organization ability and the hydrophobic surface formation ability are not significantly inhibited.
As a base material in the case of forming a hydrophobic surface on the base material surface by various treatments such as coating and coating, but not limited to, metals and alloys such as gold, silver, copper, and aluminum, alloys for solder, Examples thereof include resins as described above, those obtained by hydrophilizing the resin surface, and various ceramics.
（光酸化剤）
本発明における光酸化剤としては、限定するものではないが、過硫酸ナトリウム(Na2S2O8)、過硫酸アンモニウム(NH4S2O8)、過硫酸カリウム(K2S2O8)から選択される１種又は２種以上とすることができる。
光酸化剤水溶液における光酸化剤の濃度は、必要とされる親水性に応じて調整することができる。通常における求められる親水性としては、水に対する接触角が40°以下、より好ましくは30°以下、さらに好ましくは20°以下である。
そのような親水性とするための光酸化剤の濃度は、光酸化剤の種類にもよるが、通常は、1〜40wt％、好ましくは2〜30wt％、より好ましくは3〜20wt％である。
(Photooxidant)
The photooxidant in the present invention is not limited, but sodium persulfate (Na 2 S 2 O 8 ), ammonium persulfate (NH 4 S 2 O 8 ), potassium persulfate (K 2 S 2 O 8 ) It can be set as 1 type, or 2 or more types selected from.
The concentration of the photooxidant in the photooxidant aqueous solution can be adjusted according to the required hydrophilicity. The hydrophilicity that is usually required is that the contact angle with water is 40 ° or less, more preferably 30 ° or less, and even more preferably 20 ° or less.
The concentration of the photooxidant for making it hydrophilic is usually 1 to 40 wt%, preferably 2 to 30 wt%, more preferably 3 to 20 wt%, although it depends on the type of photooxidizer. .
（アルコール）
光酸化剤に添加されるアルコールとしては、限定するものではないが、メタノール、エタノール、プロピルアルコール、イソプロピルアルコール、ブタノールから選択される１種又は２種以上とすることができる。
光酸化剤に添加されるアルコールは、光照射により生成したラジカルのうち、光照射領域外に拡散したものを捕捉するラジカルスカベンジャーとして機能すると考えられる。
(alcohol)
Although it does not limit as alcohol added to a photooxidant, It can be set as 1 type, or 2 or more types selected from methanol, ethanol, propyl alcohol, isopropyl alcohol, and butanol.
Alcohol added to the photo-oxidant is considered to function as a radical scavenger that traps radicals generated by light irradiation that diffuse out of the light irradiation region.
（光照射）
光照射源としては、その照射光が光酸化剤を分解してラジカルを生成可能なものであればどのようなものでも良いが、例えば、高圧水銀ランプ、低圧水銀ランプ、メタルハライドランプ、エキシマレーザー等を用いることができる。
所定パターン領域に対する光照射は、所定パターンを有するフォトマスクを介して行っても良いし、光照射範囲が狭い範囲である光照射源を上記被覆疎水性表面に対し相対的に走査して行うこともできる。
(Light irradiation)
The light irradiation source may be any source as long as the irradiation light can generate a radical by decomposing a photooxidant. For example, a high pressure mercury lamp, a low pressure mercury lamp, a metal halide lamp, an excimer laser, etc. Can be used.
The light irradiation on the predetermined pattern region may be performed through a photomask having a predetermined pattern, or the light irradiation source having a narrow light irradiation range is scanned relative to the coated hydrophobic surface. You can also.
（導電性パターン膜の形成）
本発明により形成された親水性パターンを利用して導電性パターンを形成する方法としては、例えば、親水性で導電膜化可能なインクによる印刷と、該インクの焼成による導電膜化等、プリンテッド・エレクトロニクスで採用され得る公知の手法が使用できる。
(Formation of conductive pattern film)
Examples of a method for forming a conductive pattern using the hydrophilic pattern formed according to the present invention include printing using ink that is hydrophilic and capable of forming a conductive film, and forming a conductive film by baking the ink. A known method that can be employed in electronics can be used.
以下に、実験例や実施例を示し、本発明の特徴とするところをより一層明確にするが、本発明は、これらの実験例や実施例に限定されるものではない。 Hereinafter, experimental examples and examples will be shown to further clarify the features of the present invention, but the present invention is not limited to these experimental examples and examples.
実験例１
図１(Ａ)の断面模式図に示されるように、基材としての金(Au)表面にC16SH(ヘキサデカンチオール)の自己組織化膜を形成して疎水性表面を生成し、過硫酸アンモニウムNH4S2O8の30wt％水溶液を前記疎水性表面上にドロップし、石英ガラスで押し広げた後、高圧Hgランプで紫外光を照射した。
光照射前後における表面の酸素(O1s)、炭素(C1s)、硫黄(S2p)の濃度変化をＸ線光電子分光法(ＸＰＳ)により調べた。その結果を図１(Ｂ)〜(Ｄ)に示す。これにより、光照射により親水性の原因であるSO4-の表面付加が確認された。
Experimental example 1
As shown in the schematic cross-sectional view of FIG. 1A, a hydrophobic surface is formed by forming a self-assembled film of C16SH (hexadecanethiol) on the gold (Au) surface as a substrate, and ammonium persulfate NH 4 A 30 wt% aqueous solution of S 2 O 8 was dropped on the hydrophobic surface, spread with quartz glass, and then irradiated with ultraviolet light with a high-pressure Hg lamp.
Changes in the concentration of oxygen (O1s), carbon (C1s), and sulfur (S2p) on the surface before and after light irradiation were examined by X-ray photoelectron spectroscopy (XPS). The results are shown in FIGS. Thereby, the surface addition of SO 4− which is a cause of hydrophilicity was confirmed by light irradiation.
実験例２
図２(Ａ)の断面模式図に示されるように、基材としての金(Au)表面にC16SHの自己組織化膜を形成して、疎水性表面を生成し、該疎水性表面の周囲をカプトン(登録商標)テープで囲い、過硫酸アンモニウムNH4S2O8の5wt％水溶液を前記疎水性表面上にドロップし、石英ガラスで塗り広げ、該水溶液面上をフォトマスクで覆った。
図２(Ｂ)で示されるフォトマスク(開口直径497±5μｍ)を介して高圧Hgランプの紫外光を５分間照射した後、表面を洗浄、乾燥した。非プロトン性極性溶媒であるジメチルスルホキシド〔DMSO；(CH3)2SO〕を滴下したところ、フォトマスク開口部に対応する部分に、図２(Ｂ)で示されるDMSOの液滴(直径507±2μｍ)が形成された。このことから、フォトマスク開口部に対応する部分が効果的に親水性表面に変化したことが確認された。また、フォトマスク開口部に対応する部分については、ＸＰＳにより親水性の原因であるSO4-の表面付加が確認された。
Experimental example 2
As shown in the schematic cross-sectional view of FIG. 2 (A), a C16SH self-assembled film is formed on the gold (Au) surface as a substrate to generate a hydrophobic surface, and around the hydrophobic surface. Surrounded with Kapton (registered trademark) tape, a 5 wt% aqueous solution of ammonium persulfate NH 4 S 2 O 8 was dropped onto the hydrophobic surface, spread with quartz glass, and the aqueous solution surface was covered with a photomask.
After irradiating with ultraviolet light from a high-pressure Hg lamp for 5 minutes through a photomask (opening diameter 497 ± 5 μm) shown in FIG. 2 (B), the surface was washed and dried. When dimethyl sulfoxide [DMSO; (CH 3 ) 2 SO], which is an aprotic polar solvent, was dropped, a DMSO droplet (diameter 507 ±) shown in FIG. 2 μm) was formed. From this, it was confirmed that the portion corresponding to the photomask opening effectively changed to a hydrophilic surface. Further, in the portion corresponding to the photomask opening, the surface addition of SO 4− which is the cause of hydrophilicity was confirmed by XPS.
実施例１
過硫酸アンモニウムNH4S2O8の5wt％水溶液として、エタノールが0.01wt％添加されたものを用いる以外は上記実験例２と同様にして、図２(Ｃ)で示されるDMSOの液滴(直径494±4μｍ)が形成された。
Example 1
A DMSO droplet (diameter) shown in FIG. 2 (C) was used in the same manner as in Experimental Example 2 except that a 5 wt% aqueous solution of ammonium persulfate NH 4 S 2 O 8 was added with 0.01 wt% of ethanol. 494 ± 4 μm) was formed.
実施例２
過硫酸アンモニウムNH4S2O8の5wt％水溶液として、エタノールが0.1wt％添加されたものを用いる以外は上記実験例２と同様にして、図２(Ｄ)で示されるDMSOの液滴(直径344±25μｍ)が形成された。
Example 2
A DMSO droplet (diameter) shown in FIG. 2 (D) was used in the same manner as in Experimental Example 2 except that a 5 wt% aqueous solution of ammonium persulfate NH 4 S 2 O 8 was added with 0.1 wt% of ethanol. 344 ± 25 μm) was formed.
エタノール添加なしでは、フォトマスクよりも少し大きめの親水性パターンが形成されたが、エタノールを添加したものでは、フォトマスクよりも親水性パターンが小さくなっており、光酸化剤の反応領域がエタノール添加により変化したことが分かった。
また、上記実験例において、過硫酸アンモニウムの濃度を小さくすると、親水性パターン部分の接触角が小さくなったが、親水性パターンの形状変化はあまり見られなかった。一方、エタノールを添加した場合の実施例１，２では、親水性パターンの形状は上述のとおり小さくなったが、親水性パターン部分の接触角は、実験例２のものとあまり変わらなかった。
Without the addition of ethanol, a slightly larger hydrophilic pattern was formed than the photomask, but with the addition of ethanol, the hydrophilic pattern was smaller than the photomask, and the photooxidant reaction area was added with ethanol. It turned out that it changed by.
Moreover, in the said experiment example, when the density | concentration of ammonium persulfate was made small, the contact angle of the hydrophilic pattern part became small, but the shape change of the hydrophilic pattern was not seen so much. On the other hand, in Examples 1 and 2 when ethanol was added, the shape of the hydrophilic pattern was reduced as described above, but the contact angle of the hydrophilic pattern portion was not much different from that of Experimental Example 2.
これらの結果から、図３に示されるようなメカニズムが考えられる。すなわち、光酸化剤(NH4S2O8等)水溶液で被覆された疎水性表面の所定光照射部に光照射すると、光照射部領域内においてラジカルが発生し、光照射部領域内の疎水性表面にSO4-の付加が生じて親水化するとともに、疎水性表面(撥水性有機層)から離れた溶液上部で生成した光発生ラジカルが拡散することにより、光照射部を越えるより大きな範囲にまでSO4-の付加が生じて親水化してしまう。これに対し、光酸化剤水溶液にエタノール(EtOH)等のアルコールを添加する場合には、アルコールはラジカルスカベンジャーとして溶液上部で発生したラジカルを効果的に消失させることができる。そのため、反応可能なラジカルは、光照射部領域内で発生したラジカル種に限られ、光照射パターンの大きさに対応した親水性パターンが形成できると考えられる。親水性パターンが光照射部より縮小した形状となる点については、ランプの光強度分布によるものと考えられるが、その縮小の程度は、アルコールの添加量により変化するので、アルコール添加量を調整することにより、光照射パターンと同じ正確で高精度の親水性パターンを形成することができる。 From these results, a mechanism as shown in FIG. 3 can be considered. That is, when a predetermined light irradiation part of a hydrophobic surface coated with an aqueous solution of a photooxidant (such as NH 4 S 2 O 8 ) is irradiated with light, radicals are generated in the light irradiation part region, and the hydrophobic part in the light irradiation part region is generated. SO 4 is added to the hydrophilic surface to make it hydrophilic, and the photogenerated radicals generated at the top of the solution away from the hydrophobic surface (water repellent organic layer) diffuse to a larger area beyond the light irradiated area. Addition of SO 4− causes hydrophilization. In contrast, when an alcohol such as ethanol (EtOH) is added to the aqueous photooxidant solution, the alcohol can effectively eliminate radicals generated at the top of the solution as a radical scavenger. Therefore, reactive radicals are limited to radical species generated in the light irradiation region, and it is considered that a hydrophilic pattern corresponding to the size of the light irradiation pattern can be formed. The point where the hydrophilic pattern has a shape reduced from the light irradiation part is considered to be due to the light intensity distribution of the lamp, but the degree of reduction varies depending on the amount of alcohol added, so adjust the amount of alcohol added. Thereby, the same exact and highly accurate hydrophilic pattern as a light irradiation pattern can be formed.
本発明の方法によれば、各種の疎水性表面に種々の親水性パターンを正確、高精度に形成することができる。また、この親水性パターンは、導電性パターン膜の形成に利用できるので、各種のデバイス等の製造に幅広く応用することができる。 According to the method of the present invention, various hydrophilic patterns can be accurately and highly accurately formed on various hydrophobic surfaces. Moreover, since this hydrophilic pattern can be used for forming a conductive pattern film, it can be widely applied to the production of various devices.
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